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Priority to TW85101882ApriorityCriticalpatent/TW283791B/en
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A multi-coating silicon oxide insulating layer aplicable to integrated circuits and a method by which that multi-coating silicon oxide insulating layer is formed. Formed upon a semiconductor substrate is a multiplicity of individual gap filling silicon oxide insulating coatings. Formed between the individual gap filling silicon oxide insulating coatings is a multiplicity of low tensile stress and low moisture permeability silicon oxide insulating coatings. Each individual gap filling silicon oxide insulating coating is separated by a low tensile stress and low moisture permeability silicon oxide insulating coating. The sum of the gap filling silicon oxide insulating coatings and the low tensile stress and low moisture permeability silicon oxide insulating coatings forms a gap filling, low tensile stress and low moisture permeability silicon oxide insulating layer.