TW275699B - Method of preparing and integrating polyspacer, barrier and BPSG composite - Google Patents

Method of preparing and integrating polyspacer, barrier and BPSG composite

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Publication number
TW275699B
TW275699B TW84104003A TW84104003A TW275699B TW 275699 B TW275699 B TW 275699B TW 84104003 A TW84104003 A TW 84104003A TW 84104003 A TW84104003 A TW 84104003A TW 275699 B TW275699 B TW 275699B
Authority
TW
Taiwan
Prior art keywords
polyspacer
barrier
teos
flow rate
bpsg
Prior art date
Application number
TW84104003A
Other languages
Chinese (zh)
Inventor
Wenn-Bin Hwang
Wenn-Wey Yan
Bin-Yih Jan
Cherng-Jiann Lu
Original Assignee
Macronix Int Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Macronix Int Co Ltd filed Critical Macronix Int Co Ltd
Priority to TW84104003A priority Critical patent/TW275699B/en
Application granted granted Critical
Publication of TW275699B publication Critical patent/TW275699B/en

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  • Laminated Bodies (AREA)
  • Surface Treatment Of Glass (AREA)

Abstract

A method of preparing and integrating Polyspacer, BPSG is comprising of: (a) using TetraEthylOrthoSilicate (TEOS) and Ozone (O3) as starting material applying PTEOS on the surface of wafer and polysilicone to form a layer of Undoped Silicate Glass; (b) chemically etching the Undoped Silicate Glass with Trifluoromathane, aiming the Undoped Silicate Glass forming Polyspacer on two sides of polysilicone; (c) applying PTEOS with TEOS and O3 as starting material, forming a Barrier on polysilicone and on the Polyspacer; (d) using O3, TEOS, Triethylborate, Triethylphosphorate as starting material to deposit Boron Phosphorous Glass on the Barrier with the pressure of 100~300 millimeter, Hg column of 2000~5000 cm3/min, helium flow rate of 5000~7000 standard cm3/min, TEOS flow rate of 400~650 milligram/min, TEB flow rate of 120~180 milligram/min, TEPO flow rate of 20~80 milligram/min.
TW84104003A 1995-04-24 1995-04-24 Method of preparing and integrating polyspacer, barrier and BPSG composite TW275699B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW84104003A TW275699B (en) 1995-04-24 1995-04-24 Method of preparing and integrating polyspacer, barrier and BPSG composite

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW84104003A TW275699B (en) 1995-04-24 1995-04-24 Method of preparing and integrating polyspacer, barrier and BPSG composite

Publications (1)

Publication Number Publication Date
TW275699B true TW275699B (en) 1996-05-11

Family

ID=51397313

Family Applications (1)

Application Number Title Priority Date Filing Date
TW84104003A TW275699B (en) 1995-04-24 1995-04-24 Method of preparing and integrating polyspacer, barrier and BPSG composite

Country Status (1)

Country Link
TW (1) TW275699B (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0843348A3 (en) * 1996-11-13 1998-10-07 Applied Materials, Inc. Method and apparatus for processing a semiconductor substrate
EP0843347A3 (en) * 1996-11-13 1998-12-16 Applied Materials, Inc. Method and apparatus for processing a semiconductor substrate
US6569782B2 (en) * 2000-06-15 2003-05-27 Samsung Electronics Co., Ltd. Insulating layer, semiconductor device and methods for fabricating the same
US6727190B2 (en) * 1998-09-03 2004-04-27 Micron Technology, Inc. Method of forming fluorine doped boron-phosphorous silicate glass (F-BPSG) insulating materials
US6730619B2 (en) 2000-06-15 2004-05-04 Samsung Electronics Co., Ltd. Method of manufacturing insulating layer and semiconductor device including insulating layer

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0843348A3 (en) * 1996-11-13 1998-10-07 Applied Materials, Inc. Method and apparatus for processing a semiconductor substrate
EP0843347A3 (en) * 1996-11-13 1998-12-16 Applied Materials, Inc. Method and apparatus for processing a semiconductor substrate
US6114216A (en) * 1996-11-13 2000-09-05 Applied Materials, Inc. Methods for shallow trench isolation
US6727190B2 (en) * 1998-09-03 2004-04-27 Micron Technology, Inc. Method of forming fluorine doped boron-phosphorous silicate glass (F-BPSG) insulating materials
US7642204B2 (en) 1998-09-03 2010-01-05 Micron Technology, Inc. Methods of forming fluorine doped insulating materials
US6569782B2 (en) * 2000-06-15 2003-05-27 Samsung Electronics Co., Ltd. Insulating layer, semiconductor device and methods for fabricating the same
US6730619B2 (en) 2000-06-15 2004-05-04 Samsung Electronics Co., Ltd. Method of manufacturing insulating layer and semiconductor device including insulating layer

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