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Application filed by United Microelectronics CorpfiledCriticalUnited Microelectronics Corp
Priority to TW83104658ApriorityCriticalpatent/TW273636B/en
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Publication of TW273636BpublicationCriticalpatent/TW273636B/en
Internal Circuitry In Semiconductor Integrated Circuit Devices
(AREA)
Drying Of Semiconductors
(AREA)
Abstract
A method for improving the yield of metal layer is characterized in: a metal block of no connection is located on a gap of distance to any adjacent block by at least 2 micro-meter on a mask work of metal layer on which the line intervals between any two blocks exceed 14 micro-meter, so that such as the location can prevent the depression or the breakage of metal layer occurred during the over-etching process for a better quality control of manufacturing and for improving the yield of metal layer.
TW83104658A1994-05-241994-05-24A method for improving the yield of metal layer
TW273636B
(en)