TW273636B - A method for improving the yield of metal layer - Google Patents

A method for improving the yield of metal layer

Info

Publication number
TW273636B
TW273636B TW83104658A TW83104658A TW273636B TW 273636 B TW273636 B TW 273636B TW 83104658 A TW83104658 A TW 83104658A TW 83104658 A TW83104658 A TW 83104658A TW 273636 B TW273636 B TW 273636B
Authority
TW
Taiwan
Prior art keywords
metal layer
yield
improving
meter
micro
Prior art date
Application number
TW83104658A
Other languages
Chinese (zh)
Inventor
Yau-Bih Sheu
Ming-Jong Liou
Original Assignee
United Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by United Microelectronics Corp filed Critical United Microelectronics Corp
Priority to TW83104658A priority Critical patent/TW273636B/en
Application granted granted Critical
Publication of TW273636B publication Critical patent/TW273636B/en

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

A method for improving the yield of metal layer is characterized in: a metal block of no connection is located on a gap of distance to any adjacent block by at least 2 micro-meter on a mask work of metal layer on which the line intervals between any two blocks exceed 14 micro-meter, so that such as the location can prevent the depression or the breakage of metal layer occurred during the over-etching process for a better quality control of manufacturing and for improving the yield of metal layer.
TW83104658A 1994-05-24 1994-05-24 A method for improving the yield of metal layer TW273636B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW83104658A TW273636B (en) 1994-05-24 1994-05-24 A method for improving the yield of metal layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW83104658A TW273636B (en) 1994-05-24 1994-05-24 A method for improving the yield of metal layer

Publications (1)

Publication Number Publication Date
TW273636B true TW273636B (en) 1996-04-01

Family

ID=51397185

Family Applications (1)

Application Number Title Priority Date Filing Date
TW83104658A TW273636B (en) 1994-05-24 1994-05-24 A method for improving the yield of metal layer

Country Status (1)

Country Link
TW (1) TW273636B (en)

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