TW267979B - - Google Patents
Info
- Publication number
- TW267979B TW267979B TW84102586A TW84102586A TW267979B TW 267979 B TW267979 B TW 267979B TW 84102586 A TW84102586 A TW 84102586A TW 84102586 A TW84102586 A TW 84102586A TW 267979 B TW267979 B TW 267979B
- Authority
- TW
- Taiwan
Links
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4737594 | 1994-03-17 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW267979B true TW267979B (fr) | 1996-01-11 |
Family
ID=51396831
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW84102586A TW267979B (fr) | 1994-03-17 | 1995-03-17 |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TW267979B (fr) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7800111B2 (en) | 2007-10-23 | 2010-09-21 | National Sun Yat-Sen University | Trench silicon-on-insulator (SOI) DRAM cell |
-
1995
- 1995-03-17 TW TW84102586A patent/TW267979B/zh active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7800111B2 (en) | 2007-10-23 | 2010-09-21 | National Sun Yat-Sen University | Trench silicon-on-insulator (SOI) DRAM cell |