TW263609B - - Google Patents
Info
- Publication number
- TW263609B TW263609B TW082109552A TW82109552A TW263609B TW 263609 B TW263609 B TW 263609B TW 082109552 A TW082109552 A TW 082109552A TW 82109552 A TW82109552 A TW 82109552A TW 263609 B TW263609 B TW 263609B
- Authority
- TW
- Taiwan
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
- H10P90/19—Preparing inhomogeneous wafers
- H10P90/1904—Preparing vertically inhomogeneous wafers
- H10P90/1906—Preparing SOI wafers
- H10P90/1908—Preparing SOI wafers using silicon implanted buried insulating layers, e.g. oxide layers [SIMOX]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
- H10W10/10—Isolation regions comprising dielectric materials
- H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US08/120,797 US5401670A (en) | 1993-09-15 | 1993-09-15 | Technique to manufacture a SOI wafer and its applications in integrated circuits manufacturing |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW263609B true TW263609B (online.php) | 1995-11-21 |
Family
ID=22392615
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW082109552A TW263609B (online.php) | 1993-09-15 | 1993-11-16 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US5401670A (online.php) |
| TW (1) | TW263609B (online.php) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5597410A (en) * | 1994-09-15 | 1997-01-28 | Yen; Yung C. | Method to make a SOI wafer for IC manufacturing |
| US7183611B2 (en) * | 2003-06-03 | 2007-02-27 | Micron Technology, Inc. | SRAM constructions, and electronic systems comprising SRAM constructions |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4109846A (en) * | 1977-05-17 | 1978-08-29 | Sola Basic Industries, Inc. | Automatic height sensor for semiconductor bonding tool, wafer probe or the like |
| US4824489A (en) * | 1988-02-02 | 1989-04-25 | Sera Solar Corporation | Ultra-thin solar cell and method |
| US5160560A (en) * | 1988-06-02 | 1992-11-03 | Hughes Aircraft Company | Method of producing optically flat surfaces on processed silicon wafers |
| JPH0744135B2 (ja) * | 1989-08-28 | 1995-05-15 | 株式会社東芝 | 半導体基板の接着方法及び接着装置 |
| JPH0636413B2 (ja) * | 1990-03-29 | 1994-05-11 | 信越半導体株式会社 | 半導体素子形成用基板の製造方法 |
-
1993
- 1993-09-15 US US08/120,797 patent/US5401670A/en not_active Expired - Fee Related
- 1993-11-16 TW TW082109552A patent/TW263609B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| US5401670A (en) | 1995-03-28 |