TW256936B - - Google Patents

Info

Publication number
TW256936B
TW256936B TW082106901A TW82106901A TW256936B TW 256936 B TW256936 B TW 256936B TW 082106901 A TW082106901 A TW 082106901A TW 82106901 A TW82106901 A TW 82106901A TW 256936 B TW256936 B TW 256936B
Authority
TW
Taiwan
Application number
TW082106901A
Other languages
Chinese (zh)
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Application granted granted Critical
Publication of TW256936B publication Critical patent/TW256936B/zh

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/53After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone involving the removal of at least part of the materials of the treated article, e.g. etching, drying of hardened concrete
    • C04B41/5338Etching
    • C04B41/5353Wet etching, e.g. with etchants dissolved in organic solvents
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • C04B41/91After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics involving the removal of part of the materials of the treated articles, e.g. etching
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • G03F7/2041Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105After-treatment
    • H01L21/311Etching the insulating layers by chemical or physical means
    • H01L21/31105Etching inorganic layers
    • H01L21/31111Etching inorganic layers by chemical means
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40Capacitors
    • H01L28/55Capacitors with a dielectric comprising a perovskite structure material

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • ing And Chemical Polishing (AREA)
  • Weting (AREA)
TW082106901A 1992-04-20 1993-08-26 TW256936B (US06235095-20010522-C00021.png)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US87270292A 1992-04-20 1992-04-20

Publications (1)

Publication Number Publication Date
TW256936B true TW256936B (US06235095-20010522-C00021.png) 1995-09-11

Family

ID=25360138

Family Applications (1)

Application Number Title Priority Date Filing Date
TW082106901A TW256936B (US06235095-20010522-C00021.png) 1992-04-20 1993-08-26

Country Status (4)

Country Link
US (1) US5312516A (US06235095-20010522-C00021.png)
JP (1) JPH0649664A (US06235095-20010522-C00021.png)
KR (1) KR100296565B1 (US06235095-20010522-C00021.png)
TW (1) TW256936B (US06235095-20010522-C00021.png)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0465815A (ja) * 1990-07-06 1992-03-02 Matsushita Electric Ind Co Ltd パターン作成方法
US6127279A (en) * 1994-09-26 2000-10-03 Semiconductor Energy Laboratory Co., Ltd. Solution applying method
US5603848A (en) * 1995-01-03 1997-02-18 Texas Instruments Incorporated Method for etching through a substrate to an attached coating
US5705443A (en) * 1995-05-30 1998-01-06 Advanced Technology Materials, Inc. Etching method for refractory materials
US5919607A (en) * 1995-10-26 1999-07-06 Brown University Research Foundation Photo-encoded selective etching for glass based microtechnology applications
US5847390A (en) * 1996-04-09 1998-12-08 Texas Instruments Incorporated Reduced stress electrode for focal plane array of thermal imaging system and method
US6054328A (en) * 1996-12-06 2000-04-25 International Business Machines Corporation Method for cleaning the surface of a dielectric
US6080987A (en) * 1997-10-28 2000-06-27 Raytheon Company Infrared-sensitive conductive-polymer coating
US6083557A (en) * 1997-10-28 2000-07-04 Raytheon Company System and method for making a conductive polymer coating
US6352934B1 (en) * 1999-08-26 2002-03-05 Infineon Technologies Ag Sidewall oxide process for improved shallow junction formation in support region
EP1529309A1 (en) * 2002-08-06 2005-05-11 Xsil Technology Limited Laser machinining
JP4084712B2 (ja) * 2003-06-23 2008-04-30 松下電器産業株式会社 パターン形成方法
CN104759753B (zh) * 2015-03-30 2016-08-31 江苏大学 多系统自动化协调工作提高激光诱导空化强化的方法
US10867815B2 (en) * 2018-09-04 2020-12-15 Tokyo Electron Limited Photonically tuned etchant reactivity for wet etching

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4414066A (en) * 1982-09-10 1983-11-08 Bell Telephone Laboratories, Incorporated Electrochemical photoetching of compound semiconductors
US4391683A (en) * 1982-09-10 1983-07-05 Bell Telephone Laboratories, Incorporated Mask structures for photoetching procedures
US4415414A (en) * 1982-09-10 1983-11-15 Bell Telephone Laboratories, Incorporated Etching of optical surfaces
US4661201A (en) * 1985-09-09 1987-04-28 Cts Corporation Preferential etching of a piezoelectric material
US4861421A (en) * 1988-06-01 1989-08-29 Texas Instruments Incorporated Photochemical semiconductor etching
US5157000A (en) * 1989-07-10 1992-10-20 Texas Instruments Incorporated Method for dry etching openings in integrated circuit layers
US5057184A (en) * 1990-04-06 1991-10-15 International Business Machines Corporation Laser etching of materials in liquids
US5165283A (en) * 1991-05-02 1992-11-24 Kulite Semiconductor Products, Inc. High temperature transducers and methods of fabricating the same employing silicon carbide

Also Published As

Publication number Publication date
KR930021821A (ko) 1993-11-23
JPH0649664A (ja) 1994-02-22
KR100296565B1 (ko) 2001-10-24
US5312516A (en) 1994-05-17

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees