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Application filed by United Microelectronics CorpfiledCriticalUnited Microelectronics Corp
Priority to TW84104031ApriorityCriticalpatent/TW255057B/en
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A process of thin film transistor includes: (1) supplying a insulating substrate; (2) forming a Si thin film on the insulating substrate; (3) forming the gate, source and drain of a transistor on the Si thin film; (4) forming a passivation covering the transistor; (5) implementing plasma treatment with F element.
TW84104031A1995-04-241995-04-24Process of thin film transistor
TW255057B
(en)