TW252262B - - Google Patents
Info
- Publication number
- TW252262B TW252262B TW083103763A TW83103763A TW252262B TW 252262 B TW252262 B TW 252262B TW 083103763 A TW083103763 A TW 083103763A TW 83103763 A TW83103763 A TW 83103763A TW 252262 B TW252262 B TW 252262B
- Authority
- TW
- Taiwan
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3266—Magnetic control means
- H01J37/32678—Electron cyclotron resonance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12823193A JP3172757B2 (ja) | 1993-05-01 | 1993-05-01 | プラズマ処理装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW252262B true TW252262B (de) | 1995-07-21 |
Family
ID=14979742
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW083103763A TW252262B (de) | 1993-05-01 | 1994-04-26 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP3172757B2 (de) |
| KR (1) | KR100290749B1 (de) |
| TW (1) | TW252262B (de) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8662010B2 (en) | 2002-06-19 | 2014-03-04 | Mitsubishi Heavy Industries, Ltd. | Plasma processing apparatus, plasma processing method, plasma film deposition apparatus, and plasma film deposition method |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000299199A (ja) * | 1999-04-13 | 2000-10-24 | Plasma System Corp | プラズマ発生装置およびプラズマ処理装置 |
| CN111140454B (zh) * | 2020-02-13 | 2021-05-04 | 哈尔滨工业大学 | 一种微型电子回旋共振离子推力器点火装置 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2598336B2 (ja) * | 1990-09-21 | 1997-04-09 | 株式会社日立製作所 | プラズマ処理装置 |
-
1993
- 1993-05-01 JP JP12823193A patent/JP3172757B2/ja not_active Expired - Fee Related
-
1994
- 1994-04-26 TW TW083103763A patent/TW252262B/zh active
- 1994-04-27 KR KR1019940008916A patent/KR100290749B1/ko not_active IP Right Cessation
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8662010B2 (en) | 2002-06-19 | 2014-03-04 | Mitsubishi Heavy Industries, Ltd. | Plasma processing apparatus, plasma processing method, plasma film deposition apparatus, and plasma film deposition method |
Also Published As
| Publication number | Publication date |
|---|---|
| KR100290749B1 (ko) | 2001-10-24 |
| JPH06318565A (ja) | 1994-11-15 |
| JP3172757B2 (ja) | 2001-06-04 |
| KR940027041A (ko) | 1994-12-10 |