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Application filed by Horng-Nan Chen, Chorng-Ren Lii, Tian-Fwu LeifiledCriticalHorng-Nan Chen
Priority to TW83111063ApriorityCriticalpatent/TW252214B/en
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Publication of TW252214BpublicationCriticalpatent/TW252214B/en
Internal Circuitry In Semiconductor Integrated Circuit Devices
(AREA)
Formation Of Insulating Films
(AREA)
Abstract
A fabricating method of polysilicon oxide that is applicable to a polysilicon material includes the following steps: - forming a amorphous layer on the polysilicon material; - proceeding oxide process to oxidize all the amorphous layer, and forming a polysilicon layer on the polysilicon material.
TW83111063A1994-11-281994-11-28Fabricating method of polysilicon oxide
TW252214B
(en)