TW247972B - Photoelectric converting device - Google Patents

Photoelectric converting device

Info

Publication number
TW247972B
TW247972B TW83110691A TW83110691A TW247972B TW 247972 B TW247972 B TW 247972B TW 83110691 A TW83110691 A TW 83110691A TW 83110691 A TW83110691 A TW 83110691A TW 247972 B TW247972 B TW 247972B
Authority
TW
Taiwan
Prior art keywords
photoelectric converting
converting device
layer
metal layer
light receiving
Prior art date
Application number
TW83110691A
Other languages
Chinese (zh)
Inventor
Jeng-Gwo Hwu
Shwu-Jiin Wang
Jiun-Haw Lii
Original Assignee
Nat Science Committee
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nat Science Committee filed Critical Nat Science Committee
Priority to TW83110691A priority Critical patent/TW247972B/en
Application granted granted Critical
Publication of TW247972B publication Critical patent/TW247972B/en

Links

Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)

Abstract

A photoelectric converting device includes: one first metal layer used as contact electrode of the photoelectric converting device; one Si layer located one side of the first metal layer, used for supporting the photoelectric converting device; one oxide layer located on one side of the Si layer; one second metal layer located on one side of the oxide layer, used as contact electrode of photoelectric converting device; With the section including the Si layer adn the oxide layer as light receiving side of the photoelectric converting device, by energy band distortion of light receiving side's oxide layer, making the light receiving side generate electron-electric hole pair and flows to the first, second metal layer to get photoelectric converting effect.
TW83110691A 1994-11-17 1994-11-17 Photoelectric converting device TW247972B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW83110691A TW247972B (en) 1994-11-17 1994-11-17 Photoelectric converting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW83110691A TW247972B (en) 1994-11-17 1994-11-17 Photoelectric converting device

Publications (1)

Publication Number Publication Date
TW247972B true TW247972B (en) 1995-05-21

Family

ID=51401211

Family Applications (1)

Application Number Title Priority Date Filing Date
TW83110691A TW247972B (en) 1994-11-17 1994-11-17 Photoelectric converting device

Country Status (1)

Country Link
TW (1) TW247972B (en)

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Legal Events

Date Code Title Description
MK4A Expiration of patent term of an invention patent