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A process for growing Si epitaxy in low temperature, which is applicable on one Si substrate, includes the following steps: 1. dull the surface of Si substrate with one chemical solution including H; 2. placing the Si substrate into the reactor chamber of plasma-enhanced chemical vapor deposition system, after vacuum-pumping, then piping the H gas and heating the Si substrate to between 165 and 450 degree centigrade; 3. piping the SiH4 and H2 as the reacting gas, applying one radio frequency plasma to reactivate the reacting gas as plasma and forming as one Si epitaxy on the Si substrate, in which the condition for forming the Si epitaxy includes: (1) the flow of SiH4 lying between 2 and 100 sccm; (2) the flow of H2 lying between 16 and 900 sccm; (3) the total pressure of the reactor chamber of plasma-enhanced chemical vapor deposition system controlled between 50 mTorr and 2 Torr; (4) the power of radio frequency plasma lying between 5 and 50 W; (5) the flow ratio of SiH4 versus H2 being less or equal 1/4.
TW83108107A1994-09-031994-09-03Process for Si epitaxy
TW239224B
(en)
Arrangement for depositing atomic layers onto substrates used in the production of semiconductors comprises a source for trimethylaluminum vapor and a source for water connected together