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A Segregating method for integrated circuit, which is suitable for the thickly doped substrate, includes the following steps: 1. forming oxide on one side of the thickly doped substrate; 2. forming supporting layer on the thickly doped substrate; 3. forming lighted loped layer on the other side of the thickly doped substrate; 4. forming segregating tank on the lighted doped layer and thickly doped substrate until reaching the oxide to confine the active region of integrated circuit; 5. forming segregating oxide on the segregating tank.
TW83108697A1994-09-211994-09-21Segregating method for integrated circuit
TW238417B
(en)