TW222040B - - Google Patents
Info
- Publication number
- TW222040B TW222040B TW082101589A TW82101589A TW222040B TW 222040 B TW222040 B TW 222040B TW 082101589 A TW082101589 A TW 082101589A TW 82101589 A TW82101589 A TW 82101589A TW 222040 B TW222040 B TW 222040B
- Authority
- TW
- Taiwan
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
- G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3436—Arrangements for verifying correct programming or erasure
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6809992 | 1992-03-26 | ||
| JP01809593A JP3489845B2 (en) | 1992-03-26 | 1993-01-08 | Flash memory and data processor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW222040B true TW222040B (en) | 1994-04-01 |
Family
ID=13363959
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW082101589A TW222040B (en) | 1992-03-26 | 1993-03-04 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP3489845B2 (en) |
| KR (1) | KR100279781B1 (en) |
| TW (1) | TW222040B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI618090B (en) * | 2016-05-17 | 2018-03-11 | 超捷公司 | Flash memory array with individual memory cell read, program and erase |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5966332A (en) * | 1995-11-29 | 1999-10-12 | Sanyo Electric Co., Ltd. | Floating gate memory cell array allowing cell-by-cell erasure |
| US6829174B2 (en) * | 2003-01-30 | 2004-12-07 | Macronix International Co., Ltd. | Method of narrowing threshold voltage distribution |
| JP3976774B1 (en) | 2006-03-10 | 2007-09-19 | 株式会社Ｇｅｎｕｓｉｏｎ | Nonvolatile semiconductor memory device and control method thereof |
| KR101489885B1 (en) | 2007-11-21 | 2015-02-06 | 삼성전자주식회사 | Charge Trap Nonvolatile Memory Device With Enhanced Reliability And Method Of Operating The Same |
| EP2308049B1 (en) * | 2008-07-28 | 2012-05-09 | Nxp B.V. | Current sense amplifier with feedback loop |
-
1993
- 1993-01-08 JP JP01809593A patent/JP3489845B2/en not_active Expired - Fee Related
- 1993-03-04 TW TW082101589A patent/TW222040B/zh active
- 1993-03-22 KR KR1019930004397A patent/KR100279781B1/en not_active IP Right Cessation
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI618090B (en) * | 2016-05-17 | 2018-03-11 | 超捷公司 | Flash memory array with individual memory cell read, program and erase |
Also Published As
| Publication number | Publication date |
|---|---|
| KR930020468A (en) | 1993-10-19 |
| KR100279781B1 (en) | 2001-02-01 |
| JP3489845B2 (en) | 2004-01-26 |
| JPH05325573A (en) | 1993-12-10 |