TW202418357A - Substrate processing device and position measurement method which stably measure a position of a substrate - Google Patents

Abstract

A technique capable of more stably detecting a position of a substrate with respect to a measurement of a measuring device is provided. A substrate processing device comprises a holding portion holding the substrate; a measuring device disposed at a position opposed to the substrate held by the holding portion and measuring a relative distance to the substrate; a moving portion for displacing the relative position between the measuring device and the substrate; and a control portion connected to the measuring device and controlling the moving portion. The measuring device detects the reflected light reflected on the surface of the substrate by way of white confocal of respectively setting different focus distances with respect to a plurality of wavelengths. The control portion compares the light receiving amount of the reflected light with a prestored threshold value. Under the circumstance of the light receiving amount of the reflected light that does not satisfy the threshold value, the relative position displaces through the moving portion. Afterward, the relative distance measured by using the measuring device is used to calculate the position of the substrate.

Description

Substrate processing device and position measurement method

The present invention relates to a substrate processing device and a position measuring method.

Patent document 1 discloses a bonding device, which has an upper clamp for sucking the upper substrate from above and a lower clamp for sucking the lower substrate from below, and bonds two substrates relative to each other. During the bonding of the substrates, the bonding device pushes the center of the substrate of the upper clamp downward to contact the center of the substrate of the lower clamp, so that the centers of the two substrates are bonded to each other due to intermolecular forces, and the bonding area expands from the center to the outer edge.

The upper clamp of this bonding device is equipped with multiple measuring devices to measure the position of the substrate, and the progress of bonding is identified by measuring the position of the substrate when it leaves the upper clamp. [Prior art document] [Patent document]

[Patent Document 1] Japanese Patent Application Publication No. 2015-095579

[Problems to be solved by the invention]

The present invention provides a technology that can more stably detect the position of a substrate for measurement by a measuring device. [Means for solving the problem]

According to one embodiment of the present invention, a substrate processing device is provided, comprising: a holding portion for holding a substrate; a measuring device disposed at a facing position of the substrate held by the holding portion and measuring a relative distance to the substrate; a moving portion for shifting the relative position of the measuring device and the substrate; and a control portion connected to the measuring device and controlling the moving portion, wherein the measuring device detects reflected light reflected from the surface of the substrate by a white concentric focusing method with different focal distances set for a plurality of wavelengths, and the control portion compares a pre-retained critical value with the light receiving amount of the reflected light, and when the light receiving amount of the reflected light does not meet the critical value, the relative position is shifted by the moving portion, and then the relative distance measured by the measuring device is used to calculate the position of the substrate. [Effect of the invention]

According to this type, the position of the substrate can be detected more stably for the measurement of the measuring device.

The following is a detailed description of the method for implementing the present invention with reference to the drawings. The same symbols are sometimes attached to the same structural parts in each drawing, and the detailed description of the repeated parts is omitted. In addition, the X-axis direction, Y-axis direction and Z-axis direction used in the following description are axial directions that intersect each other perpendicularly, the X-axis direction and the Y-axis direction are horizontal directions, and the Z-axis is a vertical direction.

As for the substrate processing device of the first embodiment, a bonding device for bonding two substrates to each other to produce a bonded substrate is described as an example. As shown in FIG1 , at least one of the two substrates (the first substrate W1, the second substrate W2) is, for example, a silicon wafer or a compound semiconductor wafer, etc., a substrate on which a plurality of electronic circuits are formed. One of the first substrate W1 and the second substrate W2 can be a blank wafer without forming an electronic circuit. The compound semiconductor wafer is not particularly limited, and can be, for example, a GaAs wafer, a SiC wafer, a GaN wafer, or an InP wafer.

The first substrate W1 and the second substrate W2 are formed into circular plates of approximately the same shape (same diameter). As shown in FIG3 , the bonding device 1 arranges the second substrate W2 in the negative direction of the Z axis (the lower side in the vertical direction) of the first substrate W1 to bond the first substrate W1 and the second substrate W2. Therefore, the first substrate W1 is sometimes referred to as the "upper wafer W1", the second substrate W2 is sometimes referred to as the "lower wafer W2", and the bonded substrate T is sometimes referred to as the "bonded wafer T". Furthermore, the plate surface of the upper wafer W1 that is bonded to the lower wafer W2 is referred to as the "bonding surface W1j", and the plate surface on the opposite side of the bonding surface W1j is referred to as the "non-bonding surface W1n". Furthermore, the surface of the lower wafer W2 that is bonded to the upper wafer W1 is referred to as a "bonding surface W2j", and the surface on the opposite side of the bonding surface W2j is referred to as a "non-bonding surface W2n".

As shown in FIG2 , the bonding apparatus 1 has a processing container 210 that can be sealed. A transfer port 211 is formed on the side of the processing container 210 , and a switch gate 212 is provided in the transfer port 211 . The upper wafer W1 , the lower wafer W2 , and the bonding wafer T are transferred in and out through the transfer port 211 .

As shown in FIG3 , an upper clamp (first holding portion) 230 and a lower clamp (second holding portion) 231 are provided inside the processing container 210. The upper clamp 230 holds the upper wafer W1 from above with the bonding surface W1j of the upper wafer W1 facing downward. Furthermore, the lower clamp 231 is provided below the upper clamp 230 and holds the lower wafer W2 from below with the bonding surface W2j of the lower wafer W2 facing upward.

The upper clamp 230 is supported by a support member 280 disposed on the top surface of the processing container 210. On the other hand, the lower clamp 231 is supported by a first lower clamp moving part 291 disposed below the lower clamp 231 and can be disposed at a position facing the upper clamp 230.

As described later, the first lower clamp moving part 291 can move the lower clamp 231 in the horizontal direction (Y-axis direction). Furthermore, the first lower clamp moving part 291 is configured to allow the lower clamp 231 to move freely in the lead straight direction and to rotate around the lead straight axis.

The first lower clamp moving part 291 is mounted on a pair of rails 295, which are arranged on the lower side of the first lower clamp moving part 291 and extend in the horizontal direction (Y-axis direction). The first lower clamp moving part 291 is configured to be freely movable along the rails 295. The rails 295 are arranged on the second lower clamp moving part 296.

The second lower clamp moving part 296 is mounted on a pair of rails 297, which are disposed on the lower side of the second lower clamp moving part 296 and extend in the horizontal direction (X-axis direction). The second lower clamp moving part 296 is configured to be freely movable along the rails 297. The pair of rails 297 is disposed on a mounting table 298, which is disposed on the bottom surface of the processing container 210.

The first lower clamp moving part 291 and the second lower clamp moving part 296 form a moving mechanism 290. The moving mechanism 290 moves the lower clamp 231 relative to the upper clamp 230. Furthermore, the moving mechanism 290 moves the lower clamp 231 between the substrate transfer position and the bonding position.

The substrate handover position is the position where the upper clamp 230 receives the upper wafer W1 from the transport device 61 (refer to FIG. 2 ), or the lower clamp 231 receives the lower wafer W2 from the transport device 61, and the lower clamp 231 and the transport device 61 perform handover of the bonded wafer T. The substrate handover position is the position where the bonded wafer T produced by the nth (n is a natural number greater than 1) bonding is carried out continuously, and the upper wafer W1 and the lower wafer W2 to be bonded for the n+1th bonding are carried in. The substrate handover position is, for example, the position shown in FIG. 2 and FIG. 3 .

When the transport device 61 transfers the upper wafer W1 to the upper clamp 230, it enters directly below the upper clamp 230. Furthermore, when the transport device 61 receives the bonded wafer T from the lower clamp 231 and transfers the lower wafer W2 to the lower clamp 231, it enters directly above the lower clamp 231. To facilitate the entry of the transport device 61, the upper clamp 230 and the lower clamp 231 are staggered horizontally, and the vertical distance between the upper clamp 230 and the lower clamp 231 is also larger.

On the other hand, the bonding position is the position where the upper wafer W1 and the lower wafer W2 face each other at a predetermined distance. The bonding position is, for example, the position shown in FIG. 4. Compared with the substrate handover position, the bonding position has a narrower distance between the upper wafer W1 and the lower wafer W2 in the vertical direction. Furthermore, the bonding position is different from the substrate handover position, and the upper wafer W1 and the lower wafer W2 overlap in the vertical direction.

The moving mechanism 290 moves the relative position of the lower clamp 231 to the upper clamp 230 in the horizontal direction (two directions such as the X-axis direction and the Y-axis direction) and the lead vertical direction. In addition, the moving mechanism 290 moves the lower clamp 231 in the present embodiment, but it can also move either the lower clamp 231 or the upper clamp 230, or both. Furthermore, the moving mechanism 290 can also rotate the upper clamp 230 or the lower clamp 231 around the lead linear axis.

As shown in FIG4 , the upper clamp 230 is divided into a plurality of (e.g., three) areas 230a, 230b, and 230c along the radial direction of the upper clamp 230. These areas 230a, 230b, and 230c are arranged in sequence from the center to the outer edge of the upper clamp 230. Area 230a is formed into a perfect circle when viewed from above, and areas 230b and 230c are formed into a ring when viewed from above. Areas 230b and 230c may also have a plurality of arc-shaped areas (small areas) along the circumferential direction.

Each area 230a, 230b, 230c is independently provided with a suction tube 240a, 240b, 240c. Each suction tube 240a, 240b, 240c is connected to a different vacuum pump 241a, 241b, 241c. Thus, the upper clamp 230 can vacuum absorb the upper wafer W1 for each area 230a, 230b, 230c.

The upper clamp 230 is provided with a plurality of retaining pins 245 that can be freely raised and lowered in the vertical direction. The plurality of retaining pins 245 are connected to a vacuum pump 246, and the upper wafer W1 is vacuum-absorbed by the action of the vacuum pump 246. The upper wafer W1 is vacuum-absorbed to the lower ends of the plurality of retaining pins 245. An annular absorption pad may also be used instead of the plurality of retaining pins 245.

The plurality of retaining pins 245 are lowered by a driving unit (not shown) to protrude from the suction surface of the upper clamp 230. In this state, the plurality of retaining pins 245 vacuum absorb the upper wafer W1 received from the transport device 61. Afterwards, the plurality of retaining pins 245 rise to make the upper wafer W1 contact the suction surface of the upper clamp 230. Then, the upper clamp 230 vacuum absorbs the upper wafer W1 horizontally in each area 230a, 230b, 230c by the action of the vacuum pumps 241a, 241b, 241c.

Furthermore, the center of the upper clamp 230 has a through hole 243 that penetrates the upper clamp 230 in the vertical direction. The through hole 243 is penetrated by a pusher 250. The lower wafer W2 and the upper wafer W1 are spaced apart, and the pusher 250 pushes the center of the upper wafer W1 to make the upper wafer W1 contact the lower wafer W2.

The push portion 250 includes a push pin 251 and an outer cylinder 252 serving as a lifting guide for the push pin 251. The push pin 251 is inserted through the through hole 243 by, for example, a drive portion (not shown) having a built-in motor, and protrudes from the suction surface of the upper clamp 230 to push the center of the upper wafer W1 downward.

Furthermore, the lower clamp 231 is also divided into a plurality of (for example, three) areas 231a, 231b, and 231c along the radial direction of the lower clamp 231. These areas 231a, 231b, and 231c are arranged in sequence from the center to the outer edge of the lower clamp 231. Area 231a is formed into a perfect circle when viewed from above, and areas 231b and 231c are formed into a ring when viewed from above. Areas 230b and 230c may also have a plurality of arc-shaped areas (small areas) along the circumferential direction.

Each area 231a, 231b, 231c is independently provided with a suction tube 260a, 260b, 260c. Each suction tube 260a, 260b, 260c is connected to a different vacuum pump 261a, 261b, 261c. Thus, the lower clamp 231 can vacuum absorb the lower wafer W2 for each area 231a, 231b, 231c.

The lower clamp 231 is provided with a plurality of (for example, three) holding pins 265 that can be freely raised and lowered in the vertical direction. The lower wafer W2 is placed on the upper ends of the plurality of holding pins 265. Alternatively, the lower wafer W2 can also be vacuum-adsorbed on the upper ends of the plurality of holding pins 265.

The plurality of retaining pins 265 protrude from the suction surface of the lower clamp 231 by rising. In this state, the plurality of retaining pins 265 receive the lower wafer W2 from the transport device 61. Thereafter, the plurality of retaining pins 265 descend so that the lower wafer W2 contacts the suction surface 300 of the lower clamp 231. Then, the lower clamp 231 horizontally vacuum-suctions the lower wafer W2 at a plurality of areas of the suction surface 300.

Returning to FIG. 2 , the joining device 1 has a control device (control unit) 90 for controlling each structure. The control device 90 is a control computer having one or more processors 91, a memory 92, an input/output interface (not shown), and an electronic circuit. The one or more processors 91 are composed of one or more combinations of CPUs (Central Processing Units), ASICs (Application Specific Integrated Circuits), FPGAs (Field Programmable Gate Arrays), circuits composed of multiple discrete semiconductors, etc., and execute the program stored in the memory 92. The memory 92 includes a non-volatile memory and a volatile memory, forming the memory unit of the control device 90.

Next, referring to FIG. 5 to FIG. 7 , the steps of making the bonded wafer T in the bonding device 1 are described in detail. As shown in FIG. 5 , the control device 90 moves the upper wafer W1 and the lower wafer W2 into the bonding device 1 via the transport device 61 (step S101). After moving in, the relative position of the upper clamp 230 and the lower clamp 231 is the substrate handover position shown in FIG. 6 and FIG. 7 .

After loading, the control device 90 moves the relative position of the upper clamp 230 and the lower clamp 231 from the substrate transfer position to the bonding position shown in FIG7 (step S102) by the moving mechanism 290. In this step S112, the control device 90 uses the upper camera S1 and the lower camera S2 as shown in FIG6 to align the position of the upper wafer W1 and the lower wafer W2.

The upper camera S1 is fixed to the upper fixture 230 and takes an image of the lower wafer W2 held in the lower fixture 231. A plurality of reference points P21 to P23 are pre-formed on the bonding surface W2j of the lower wafer W2. As for the reference points P21 to P23, patterns of electronic circuits, etc. can be used. The number of reference points can be set arbitrarily.

On the other hand, the lower camera S2 is fixed to the lower fixture 231 and takes an image of the upper wafer W1 held by the upper fixture 230. A plurality of reference points P11 to P13 are pre-formed on the bonding surface W1j of the upper wafer W1. As for the reference points P11 to P13, patterns of electronic circuits, etc. can be used. The number of reference points can be set arbitrarily.

As shown in FIG6(A), the joint device 1 adjusts the relative horizontal positions of the upper camera S1 and the lower camera S2 by means of the moving mechanism 290. Specifically, the moving mechanism 290 moves the lower fixture 231 in the horizontal direction so that the lower camera S2 is approximately located directly below the upper camera S1. Then, the upper camera S1 and the lower camera S2 will photograph a common target X, and the moving mechanism 290 will fine-tune the horizontal position of the lower camera S2 so that the horizontal positions of the upper camera S1 and the lower camera S2 are consistent.

Next, as shown in FIG6(B), the moving mechanism 290 moves the lower clamp 231 vertically upward to adjust the horizontal positions of the upper clamp 230 and the lower clamp 231. Specifically, while the moving mechanism 290 moves the lower clamp 231 horizontally, the upper camera S1 sequentially photographs the reference points P21 to P23 of the lower wafer W2, and the lower camera S2 sequentially photographs the reference points P11 to P13 of the upper wafer W1. In addition, FIG6(B) shows the situation where the upper camera S1 photographs the reference point P21 of the lower wafer W2, and the lower camera S2 photographs the reference point P11 of the upper wafer W1.

The upper camera S1 and the lower camera S2 send the image data obtained by the shooting to the control device 90. The control device 90 controls the moving mechanism 290 based on the image data shot by the upper camera S1 and the image data shot by the lower camera S2 to adjust the horizontal position of the lower clamp 231 so that the reference points P11-P13 of the upper wafer W1 are aligned with the reference points P21-P23 of the lower wafer W2 when viewed from the vertical direction.

Next, as shown in FIG6(C), the moving mechanism 290 moves the lower clamp 231 vertically upward. As a result, the gap G (refer to FIG7) between the bonding surface W2j of the lower wafer W2 and the bonding surface W1j of the upper wafer W1 becomes a preset distance, for example, 80μm to 200μm. The gap G is adjusted using the first displacement meter S3 and the second displacement meter S4.

The first shift meter S3 is fixed to the upper clamp 230 in the same manner as the upper camera S1, and measures the thickness of the wafer W2 held under the lower clamp 231. The first shift meter S3, for example, irradiates light to the lower wafer W2, receives reflected light reflected from the upper and lower surfaces of the lower wafer W2, and measures the thickness of the lower wafer W2. This thickness measurement is performed, for example, when the moving mechanism 290 moves the lower clamp 231 in the horizontal direction. The measurement method of the first shift meter S3 includes, for example, a concentric focusing method, a spectroscopic interference method, or a triangulation ranging method. The light source of the first shift meter S3 is an LED or a laser.

On the other hand, the second shift meter S4 is fixed to the lower clamp 231 in the same manner as the lower camera S2, and measures the thickness of the wafer W1 held on the upper clamp 230. The second shift meter S4, for example, irradiates light to the upper wafer W1, receives reflected light reflected from the upper and lower surfaces of the upper wafer W1, and measures the thickness of the upper wafer W1. This thickness measurement is performed, for example, when the moving mechanism 290 moves the lower clamp 231 in the horizontal direction. The measurement method of the second shift meter S4 includes, for example, a concentric focusing method, a spectroscopic interference method, or a triangulation ranging method. The light source of the second shift meter S4 is an LED or a laser.

The first displacement meter S3 and the second displacement meter S4 send the measured data to the control device 90. The control device 90 controls the moving mechanism 290 based on the data measured by the first displacement meter S3 and the data measured by the second displacement meter S4 to adjust the vertical position of the lower clamp 231 so that the gap G becomes the set value.

Next, the vacuum pump 241a is stopped, as shown in FIG7(A), and the vacuum adsorption of the upper wafer W1 in the area 230a is released. After that, the push pin 251 of the push part 250 descends, pushing the center of the upper wafer W1 downward, so that the upper wafer W1 contacts the lower wafer W2 (step S103 of FIG5). As a result, the centers of the upper wafer W1 and the lower wafer W2 are bonded to each other.

The bonding surface W1j of the upper wafer W1 and the bonding surface W2j of the lower wafer W2 are modified, and firstly, a Van der Waals force (intermolecular force) is generated between the bonding surfaces W1j and W2j, so that the bonding surfaces W1j and W2j are bonded to each other. Furthermore, since the bonding surface W1j of the upper wafer W1 and the bonding surface W2j of the lower wafer W2 are hydrophilized, the hydrophilic groups (such as OH groups) form hydrogen bonds, so that the bonding surfaces W1j and W2j are stably bonded to each other.

Next, the control device 90 stops the operation of the vacuum pump 241b, as shown in FIG7(B), and releases the vacuum suction of the upper wafer W1 in the area 230b. Next, the control device 90 stops the operation of the vacuum pump 241c, as shown in FIG7(C), and releases the vacuum suction of the upper wafer W1 in the area 230c.

In this way, the vacuum adsorption of the upper wafer W1 is gradually released from the center to the periphery of the upper wafer W1, so that the upper wafer W1 gradually falls and touches the lower wafer W2. Then, the upper wafer W1 and the lower wafer W2 are bonded from the center to the periphery in sequence (step S104). Thereby, the bonding surface W1j of the upper wafer W1 and the bonding surface W2j of the lower wafer W2 are fully contacted, so that the upper wafer W1 and the lower wafer W2 are bonded, and a bonded wafer T is obtained. Afterwards, the control device 90 causes the push pin 251 to rise to the original position.

After forming the bonded wafer T, the control device 90 moves the relative position of the upper clamp 230 and the lower clamp 231 from the bonding position shown in FIG. 4 to the substrate handover position shown in FIG. 2 and FIG. 3 (step S105) through the moving mechanism 290. For example, the moving mechanism 290 first lowers the lower clamp 231 to widen the vertical distance between the upper clamp 230 and the lower clamp 231. Then, the moving mechanism 290 moves the lower clamp 231 horizontally to stagger the upper clamp 230 and the lower clamp 231 horizontally.

Afterwards, the control device 90 moves the bonding wafer T out of the bonding device 1 through the transport device 61 (step S106). Specifically, first, the lower clamp 231 releases the bonding wafer T. Then, the control device 90 raises the plurality of retaining pins 265 and hands the bonding wafer T to the transport device 61. Afterwards, the plurality of retaining pins 265 descend to their original positions.

As shown in FIG8 , the above bonding device 1 has a plurality of shift sensors 10 (measuring devices) inside the upper clamp 230 (holding portion) to measure the relative distance to the upper wafer W1 in order to identify the bonding progress of the upper wafer W1 and the lower wafer W2. As for the plurality of shift sensors 10, examples include an inner shift sensor 10a disposed in the area 230a of the upper clamp 230, a middle shift sensor 10b disposed in the area 230b, and an outer shift sensor 10c disposed in the area 230c. In addition, the bonding device 1 may also have a plurality of shift sensors 10 in the lower clamp 231 to measure the relative distance to the lower wafer W2 (refer to FIG6 (A)).

Each shift sensor 10 (inner shift sensor 10a, middle shift sensor 10b, outer shift sensor 10c) is arranged inside the upper fixture 230 at a position facing the upper wafer W1 held by the upper fixture 230. Each shift sensor 10 measures the distance from its respective setting position to the surface (non-bonding surface W1n) facing the upper wafer W1. As a result, the shift sensor 10 can obtain the relative distance between the shift sensor 10 and the upper wafer W1.

Furthermore, each shift sensor 10 of the present embodiment is a sensor using a white concentric focus method, which emits white (multi-color) measuring light to the upper wafer W1, and uses the information of the color reflected from the surface (non-bonding surface W1n) of the upper wafer W1 to measure the distance. The white concentric focus method shift sensor 10 has an unillustrated white LED and an unillustrated lens module inside; the lens module focuses each color (each of multiple different wavelengths) of the measuring light emitted by the white LED at a different position on the optical axis. Furthermore, the white concentric focus method shift sensor 10 has an unillustrated detector that splits the reflected light to detect the reflected spectrum.

For example, as shown in FIG. 9(A), the shift sensor 10 sets the focal distance of the blue light BL to the farthest, the focal distance of the red light RL to the shortest, and the focal distance of the green light GL to be between the two. The light of the color (wavelength) focused on the upper surface of the upper wafer W1 has the strongest reflection degree. Therefore, the shift sensor 10 can measure the relative distance between the shift sensor 10 and the upper wafer W1 from the peak wavelength of the reflected light spectrum. In addition, the order and distance of the focal positions of the red light RL, the green light GL, and the blue light BL are not particularly limited and can be set arbitrarily according to the device used, etc. By using the white concentric focus type shift sensor 10, the bonding device 1 does not need to be in contact with the upper wafer W1 during measurement, and a higher measurement accuracy can be obtained.

However, when the white concentric focus type shift sensor 10 measures the relative distance to the upper wafer W1, it will be affected by the film formed on the upper surface (non-bonding surface W1n) of the upper wafer W1, and may fail to measure. The reason is that thin film interference occurs due to the film type or film thickness of the film on the wafer W, so that specific wavelengths among multiple wavelengths are not reflected. In particular, when the film formed on the upper wafer W1 is a silicon nitride film WB, the reflectivity of each wavelength will change significantly due to a slight change in the film thickness. In addition, the film formed on the upper surface (non-bonding surface W1n) of the upper wafer W1 may also be a film that is inadvertently formed when the film is formed on the lower surface (bonding surface W1j) of the upper wafer W1. In this case, the film thickness of the film formed on the upper wafer W1 is likely to be inconsistent. Referring to FIG. 9 , the relationship between the film thickness of the upper wafer W1 and the wavelength that the displacement sensor 10 cannot measure is described below.

As shown in FIG9(A), when the silicon nitride film WB formed on the upper wafer W1 is 80nm, the reflectivity of the wavelength range (about 650nm) of the red light RL will decrease. In this case, if the focus of the red light RL irradiated from the shift sensor 10 to the upper wafer W1 is aligned on the upper wafer W1, the peak height (light received) of the reflected light spectrum will be greatly reduced, thereby reducing the measurement accuracy of the relative distance between the shift sensor 10 and the upper wafer W1.

As shown in FIG9(B), when the silicon nitride film WB formed on the upper wafer W1 is 70nm, the reflectivity of the wavelength range (about 550nm) of the green light GL will decrease. In this case, if the focus of the green light GL irradiated from the shift sensor 10 to the upper wafer W1 is aligned on the upper wafer W1, the peak height (light receiving amount) of the reflected light spectrum will be greatly reduced, thereby reducing the measurement accuracy of the relative distance between the shift sensor 10 and the upper wafer W1.

As shown in FIG9(C), when the silicon nitride film WB formed on the upper wafer W1 is 60nm, the reflectivity of the wavelength range (about 500nm) of the blue light BL will decrease. In this case, if the focus of the blue light BL irradiated from the shift sensor 10 to the upper wafer W1 is aligned on the upper wafer W1, the peak height (light receiving amount) of the reflected light spectrum will be greatly reduced, thereby reducing the measurement accuracy of the relative distance between the shift sensor 10 and the upper wafer W1.

According to the above, the bonding device 1 of the present embodiment shifts the relative position (relative distance) between the shift sensor 10 and the upper wafer W1 in response to the amount of light received by the shift sensor 10, thereby accurately measuring the relative distance and accurately monitoring the position of the upper wafer W1. The position of the upper wafer W1 is, for example, the position of the upper wafer W1 relative to the suction surface of the upper fixture 230.

As shown in FIG. 10(A), the bonding device 1 has a moving part 11, which moves the relative position of the upper wafer W1 as the measurement object and the shift sensor 10 in the Z-axis direction (the position along the direction of the optical axis). In this embodiment, the moving part 11 uses a sensor moving part 11A to fix the upper wafer W1 adsorbed by the upper clamp 230, and on the other hand, moves the shift sensor 10.

The sensor moving part 11A, for example, has a movable body for holding the displacement sensor 10, a rail for guiding the movable body in the Z-axis direction, a driving actuator for generating a driving force, a driving transmission part for transmitting the driving force of the driving actuator to the movable body, etc. (none of which is shown in the figure). Furthermore, the sensor moving part 11A is connected to the control device 90, and the driving actuator is driven under the control of the control device 90, so that the displacement sensor 10 and the upper fixture 230 move relative to each other. When the displacement sensor 10 moves, the control device 90 obtains the movement amount (movement distance) of the displacement sensor 10 through feedback control or forward control, etc., and stores it in the memory 92. In this way, the distance that the displacement sensor 10 moves relative to the reference position of the displacement sensor 10, that is, the position of the displacement sensor 10, can be continuously identified.

In addition, the moving part 11 is not limited to a structure for moving the shift sensor 10, and may also be a structure in which a holding part (upper clamp 230) holding a measurement object (upper wafer W1) moves relative to the shift sensor 10. For example, as shown in FIG. 10(B), the bonding device 1 has a clamp moving part 11B for moving the upper clamp 230, and the upper clamp 230 is moved in the Z-axis direction by the clamp moving part 11B. In this case, the shift sensor 10 can be fixed so as to be immovable by a fixed body not shown in the figure in the bonding device 1. In addition, if the shift sensor 10 measures the position of the lower wafer W2, the moving part 11 can use a moving mechanism 290. Furthermore, the moving unit 11 may be configured to move both the displacement sensor 10 and the upper wafer W1 or the lower wafer W2 to be measured.

For the measurement of the relative distance between each shift sensor 10 and the upper wafer W1, the control device 90 obtains information on the peak light intensity of the reflected light spectrum (e.g., the current value of the light-emitting diode) when each shift sensor 10 receives reflected light. Then, for example, the control device 90 compares the preset threshold value with the light intensity. When the light intensity is lower than the threshold value, the control device 90 performs processing and shifts the relative position of the shift sensor 10 and the measured object by the moving part 11. The threshold value can be set to an appropriate value according to the luminous intensity of the measurement light of the shift sensor 10 or the specifications of the sensor itself.

As an example, the control device 90 moves the shift sensor 10 in the Z-axis direction through the sensor moving part 11A, while monitoring the peak light received amount of the reflected spectrum. The peak light received amount and the peak wavelength will change slowly. Then, when the light received amount of the shift sensor 10 reaches above the critical value, the relative distance between the shift sensor 10 and the upper wafer W1 at that position is measured. The control device 90 calculates the position of the upper wafer W1 relative to the adsorption surface of the upper clamp 230 based on the relative distance between the shift sensor 10 and the upper wafer W1 and the moving distance of the sensor moving part 11A. In this way, the bonding device 1 can stably detect the position of the upper wafer W1 through the shift sensor 10.

The bonding device 1 of this embodiment basically has the above structure, and its operation (position measurement method) is described in detail below with reference to FIG. 11 .

The control device 90 of the bonding device 1 performs a position measurement method in steps S103 and S104 of the substrate processing method shown in FIG5 , and measures the position of the upper wafer W1 with each shift sensor 10. As shown in FIG11 , in the position measurement method, the control device 90 obtains information on the peak light intensity of the reflection spectrum detected by each shift sensor 10, and compares the light intensity with a pre-retained critical value (step S11). The comparison just started is hereinafter referred to as an initial comparison.

As shown in FIG. 12(A), when the amount of light received does not meet the limit value (step S11: No), it means that at the current relative position of the shift sensor 10 and the upper wafer W1, the film seed and film thickness of the upper wafer W1 cause the reflectivity of the specified wavelength to weaken. In this case, the accuracy of the relative distance measured by the shift sensor 10 and the upper wafer W1 will be reduced. Therefore, the control device 90 will determine to implement the relative position shift of the shift sensor 10 and the upper wafer W1 and proceed to step S12.

On the contrary, when the amount of received light reaches or exceeds the critical value, it means that at the current relative position of the shift sensor 10 and the upper wafer W1, the relative distance of the upper wafer W1 can be correctly measured by the shift sensor 10. Therefore, when the amount of received light is or exceeds the critical value (step S11: yes), steps S12 and S13 are skipped and the process proceeds to step S14.

In step S12, the control device 90 moves the shift sensor 10 in the Z-axis direction by the sensor moving part 11A. As the relative position of the shift sensor 10 and the upper wafer W1 shifts, the shift sensor 10 detects the reflected light with an increased amount of light received, as shown in FIG. 12(B). Furthermore, when the sensor moving part 11A moves, the control device 90 simultaneously obtains the moving distance of the reference position of the shift sensor 10 as described above.

The control device 90 causes the above-mentioned shift sensor 10 and the upper wafer W1 to shift, and at the same time, obtains the amount of light received by the shift sensor 10 of the reflected light, and compares the amount of light received with the critical value (step S13). The comparison performed along with the shift of the relative position is hereinafter referred to as the comparison during movement. The critical value of the initial comparison and the critical value of the comparison during movement may be the same or different. For example, for the comparison during movement, in order to accurately capture the reflected light of the shift sensor 10, the critical value of the comparison during movement may be set higher than the critical value of the initial comparison. For the comparison during movement, when the amount of light received by the reflected light does not meet the critical value (step S13: No), return to step S12 to repeat the same process.

On the other hand, as shown in FIG. 12(C), when the amount of reflected light received reaches a critical value or more (step S13: Yes), it means that the relative distance of the upper wafer W1 can be correctly measured by the shift sensor 10. Therefore, the control device 90 stops the shift sensor 10 from moving by the sensor moving part 11A and proceeds to step S14. At this time, the control device 90 calculates the moving distance after the movement (the difference between the reference position and the moving stop position of the shift sensor 10).

In step S14, the control device 90 measures the relative distance of the upper wafer W1 by means of the displacement sensor 10. At this time, the control device 90 smoothly derives the relative distance corresponding to the wavelength (color) based on the measurement information of the displacement sensor 10 (the peak wavelength at which the amount of light received by the reflected light becomes above the critical value).

Finally, the control device 90 calculates the position of the upper wafer W1 (for example, the relative position of the upper wafer W1 to the adsorption surface of the upper clamp 230) (step S15). When the relative position of the shift sensor 10 and the upper wafer W1 is shifted through steps S12 and S13, the moving distance is added to the relative distance measured by the shift sensor 10. For example, when the shift sensor 10 is moved away from the upper wafer W1, the control device 90 adds the relative distance to the negative moving distance. On the other hand, when the shift sensor 10 is moved toward the upper wafer W1, the control device 90 adds the relative distance to the positive moving distance. In addition, when the relative distance of the upper wafer W1 is directly calculated in step S11 (without going through steps S12 and S13), the control device 90 can directly convert the relative distance measured by the shift sensor 10 into the position of the upper wafer W1.

As described above, the substrate processing device (bonding device 1) of the present embodiment can appropriately adjust the relative position of the measuring device (shift sensor 10) of the white concentric focus method and the substrate (upper wafer W1) in response to the amount of light received by the measuring device (shift sensor 10). Thereby, even if the amount of light received by the measuring device of the white concentric focus method is affected by the film formed on the substrate, the measurement accuracy can be avoided from being reduced, and the relative distance between the measuring device and the substrate can be stably measured. As a result, the substrate processing device can correctly identify the position of the substrate and monitor the substrate processing or perform the substrate processing itself with higher accuracy. In addition, when the amount of light received by the measuring device is sufficiently higher than the critical value, the substrate processing device can use the relative distance measured by the measuring device to immediately identify the position of the substrate.

Furthermore, when the substrate processing device (bonding device 1) shifts the relative position of the measuring device (shift sensor 10) and the substrate (upper wafer W1) by the moving part 11, it is possible to monitor the amount of light received by the reflected light, thereby accurately measuring the relative distance at the relative position where a sufficient amount of light can be received. Then, the bonding device 1 using this shift sensor 10 and the control device 90 can monitor the bonding of the upper wafer W1 and the lower wafer W2 with higher accuracy.

In addition, the position measurement method using the displacement sensor 10 of the bonding device 1 is of course not limited to the above-mentioned processing, and various modifications are possible.

For example, the position measurement method represented by the first variant shown in Figure 13 is different from the above-mentioned position measurement method in that, when the amount of light received by the shift sensor 10 in the initial comparison does not reach the critical value, the relative position of the shift sensor 10 and the upper wafer W1 is moved only by a specified moving distance through the sensor moving part 11A.

Specifically, in the position measurement method of the first variant, the control device 90 obtains information on the amount of reflected light detected by each displacement sensor 10, and compares the amount of light received with the critical value as an initial comparison (step S21). If the amount of light received is less than the critical value (step S21: No), the process proceeds to step S22; on the other hand, if the amount of light received is greater than the critical value (step S21: Yes), the process skips step S22 and proceeds to step S23.

In step S22, the control device 90 moves the displacement sensor 10 in the Z-axis direction by the sensor moving part 11A only by a predetermined moving distance. The predetermined moving distance is ideally set to a value having the following properties: the color (wavelength) of the reflected light set at the focal distance can be changed reliably. For example, the predetermined moving distance is a distance at which the wavelength of the reflected light set at the focal distance changes within the range of 50nm to 200nm. In this way, the control device 90 can smoothly perform detection by the displacement sensor 10 after the displacement by the predetermined moving distance. Furthermore, during the movement of the sensor moving part 11A, the light receiving amount of the displacement sensor 10 is not monitored, and the control device 90 can move the displacement sensor 10 to the specified moving distance in a short time. Then, the displacement sensor 10 that stops after the sensor moving part 11A moves only the specified moving distance can stably detect the reflected light receiving amount above the critical value in the subsequent measurement.

In step S23, the control device 90 measures the relative distance to the upper wafer W1 by means of the displacement sensor 10. At this time, the control device 90 can smoothly derive the relative distance corresponding to the wavelength (color) based on the measurement information of the displacement sensor 10 (the peak wavelength at which the amount of light received by the reflected light becomes above the critical value).

Then, the control device 90 calculates the position of the upper wafer W1 in the Z-axis direction (for example, the relative position of the upper wafer W1 to the suction surface of the upper clamp 230) (step S24). When the shift sensor 10 and the upper wafer W1 are made relative to each other through step S22, it is sufficient to add the specified moving distance to the relative distance of the shift sensor 10. Thus, the control device 90 can quickly calculate the position of the upper wafer W1. In addition, when the position of the upper wafer W1 is directly calculated in step S21, the control device 90 can directly convert the relative distance of the shift sensor 10 into the position of the upper wafer W1.

In this way, in the position measurement method, the substrate processing device (bonding device 1) can stably detect the position of the upper wafer W1 with the shift sensor 10 even if the relative position is only shifted by a predetermined moving distance. Moreover, when the amount of light received by the shift sensor 10 is relatively small, a simple shift process is performed so that the relative position of the shift sensor 10 and the substrate is only shifted by a predetermined moving distance, thereby reducing the monitoring load of the amount of light received by the shift sensor 10. As a result, the above-mentioned substrate processing device can suppress the delay caused by the position monitoring of the upper wafer W1, thereby achieving the overall efficiency of the substrate processing.

Furthermore, the position measurement method represented by the second variant example shown in Figure 14 is different from the above-mentioned position measurement method in that the film state (film species, film thickness) of the upper wafer W1 is identified, and the relative position of the shift sensor 10 and the upper wafer W1 is shifted according to the film state of the upper wafer W1.

In this case, the control device 90 of the bonding device 1 will store mapping information in the memory 92, which is information about the film type and film thickness of the film to be formed on the upper wafer W1, corresponding to the target position of the relative distance between the shift sensor 10 and the upper wafer W1. Furthermore, before the substrate processing starts, the control device 90 can obtain the film type and film thickness information of the film on the upper wafer W1 based on the input of the film thickness measuring device (not shown) or the user, and store it in the memory 92.

In the position measurement method related to the second variant, the control device 90 reads the information of the film species and the film thickness from the memory 92 before the substrate processing starts, and extracts the target position of the relative distance of the shift sensor 10 from the mapping information based on the information (step S31). Furthermore, the control device 90 shifts the relative position of the shift sensor 10 and the upper wafer W1 from the reference position by the sensor moving part 11A before measuring with the shift sensor 10 based on the target position extracted from the mapping information (step S32). In this way, the bonding device 1 can arrange the shift sensor 10 at an appropriate position before measuring with the shift sensor 10.

Afterwards, the control device 90 obtains the amount of light received by the reflected light of the displacement sensor 10, and compares the amount of light received with the critical value (step S33: initial comparison). In the case where the amount of light received by the reflected light does not meet the critical value (step S33: No), even if the displacement sensor 10 is moved according to the film type and film thickness, the amount of light received will not exceed the critical value. In this case, this set of processing flow cannot fully correspond, so it is necessary to move to the processing flow of the position measurement method of Figure 11 (step S12). In this way, the control device 90 can perform processing while moving the displacement sensor 10 while monitoring the amount of light received. On the other hand, when the amount of reflected light received reaches or exceeds the critical value (step S33: Yes), it means that the relative distance of the upper wafer W1 can be correctly measured by the displacement sensor 10. Therefore, the control device 90 proceeds to step S34.

In step S34, the control device 90 measures the relative distance of the upper wafer W1 by means of the displacement sensor 10. At this time, the control device 90 smoothly derives the relative distance corresponding to the wavelength (color) based on the measurement information of the displacement sensor 10 (the peak wavelength at which the amount of light received by the reflected light becomes above the critical value).

Then, the control device 90 calculates the Z-axis position of the upper wafer W1 (step S35). The control device 90 only needs to add the moving distance of the extracted target position to the relative distance measured by the shift sensor 10. Thus, the control device 90 can quickly calculate the position of the upper wafer W1.

As described above, when the film type and film thickness of the film are known in advance, the substrate processing device (bonding device 1) shifts the relative position according to the film type and film thickness, thereby allowing the measuring device (displacement sensor 10) to more smoothly adjust the measurable target position. In addition, when the amount of light received by the displacement sensor 10 is small, the amount of light received is monitored as the relative position moves, and the position of the upper wafer W1 can be measured more stably using the displacement sensor 10.

Furthermore, the substrate processing apparatus that uses the displacement sensor 10 to perform the above-mentioned position measurement method is not limited to the bonding apparatus 1, and can be applied to various apparatuses.

For example, the substrate processing device related to the second embodiment shown in FIG. 15(A) is a stripping device 2, which strips the support wafer WS temporarily bonded to the wafer W via the adhesive layer WG from the wafer W; and for this stripping device 2, a shift sensor 10 and a position measurement method of a white concentric focus method are used. The stripping device 2 calculates the position of the upper surface of the support wafer WS by measuring the relative distance between the shift sensor 10 and the support wafer WS. The stripping device 2 adjusts the height of the blade 20 based on the position of the upper surface of the support wafer WS and the thickness of the support wafer WS. Thereafter, the peeling device 2 inserts the blade 20 into the interface between the supporting wafer WS and the adhesive layer WG, thereby performing substrate processing to peel the supporting wafer WS from the wafer W.

Before substrate processing is performed by the stripping device 2, the lower side of the wafer W is fixed to a holding portion not shown in the figure via a tape member 81. On the other hand, the upper side (surface) of the wafer W is layered with a supporting wafer WS via an adhesive layer WG. Devices can also be formed on the upper side of the wafer W. The device includes an electronic circuit. An adhesive layer WG is provided on the device. The supporting wafer WS is a blank wafer, and no device is formed on the lower side of the supporting wafer WS.

Then, in the position measurement method of measuring the position of the supporting wafer WS by measuring the displacement sensor 10, the peeling device 2 shifts the relative position of the displacement sensor 10 and the supporting wafer WS to increase the amount of light received by the reflected light. In this way, the peeling device 2 can accurately perform position measurement with the displacement sensor 10 so that the height of the blade 20 is accurately aligned with the adhesive layer WG.

Furthermore, the substrate processing apparatus related to the third embodiment shown in FIG. 15(B) is a thickness measuring apparatus 3, in which the displacement sensors 10 are respectively arranged at facing positions on a pair of planes (surfaces) of the wafer W. The thickness measuring apparatus 3 calculates the thickness of the wafer W based on the measurement results measured by the pair of displacement sensors 10, that is, based on the position of the wafer W. When the position of the wafer W is measured by each displacement sensor 10, the thickness measuring apparatus 3 can accurately obtain the position of the wafer W and correctly identify the thickness of the wafer W by performing the above-mentioned position measurement method.

All items of the substrate processing device and position measurement method disclosed in this embodiment are examples rather than limitations. The embodiment can be modified and improved in various forms as long as it does not exceed the scope of the patent application and its purpose. The matters recorded in the above multiple embodiments can be used as other structures within the scope of non-contradiction, or can be combined within the scope of non-contradiction.

1: Bonding device (substrate processing device) 10: Displacement sensor (measurer) 11: Moving unit 90: Control device (control unit) 230: Upper clamp W1: Upper wafer, first substrate

[FIG. 1] is a side view showing an example of a first substrate and a second substrate. [FIG. 2] is a top view showing an example of a bonding module related to an embodiment. [FIG. 3] is a side view of the bonding module of FIG. 3. [FIG. 4] is a cross-sectional view showing an example of an upper clamp and a lower clamp. [FIG. 5] is a flow chart showing an example of a substrate processing method. [FIG. 6] FIG. 6(A) is a side view showing an example of an action of step S102 in FIG. 5. FIG. 6(B) is a side view showing an action subsequent to FIG. 6(A). FIG. 6(C) is a side view showing an action subsequent to FIG. 6(B). [FIG. 7] FIG. 7(A) is a cross-sectional view showing an example of an action of step S103 in FIG. 5. FIG. 7(B) is a cross-sectional view showing an example of the action of step S104 in FIG. 5. FIG. 7(C) is a cross-sectional view showing the action following FIG. 7(B). [FIG. 8] is a cross-sectional view showing a plurality of shift sensors provided on the upper fixture. [FIG. 9] FIG. 9(A) is a diagram showing a state where the shift detector detects red, and a graph showing a state where the red reflectivity is low. FIG. 9(B) is a diagram showing a state where the shift detector detects green, and a graph showing a state where the green reflectivity is low. FIG. 9(C) is a diagram showing a state where the shift detector detects blue, and a graph showing a state where the blue reflectivity is low. [FIG. 10] FIG. 10(A) is a diagram showing a structure for shifting the relative position of the shift sensor and the upper wafer. FIG. 10(B) is a diagram showing another structure for shifting the relative position of the shift sensor and the upper wafer. [FIG. 11] is a flowchart showing the measurement process in the substrate processing method. [FIG. 12] FIG. 12(A) is a graph showing the relationship between the initial relative position of the shift sensor and the upper wafer and the amount of light received by the reflected light. FIG. 12(B) is a graph showing the relationship between the relative position of the shift sensor and the upper wafer during the shift and the amount of light received by the reflected light. FIG. 12(C) is a graph showing the relationship between the relative position of the shift sensor and the upper wafer after the shift and the amount of light received by the reflected light. [FIG. 13] is a flowchart showing the measurement process in the substrate processing method related to the first embodiment. [FIG. 14] is a flowchart showing the measurement process in the substrate processing method related to the second embodiment. [Figure 15] Figure 15 (A) is a schematic diagram showing a peeling device related to the second embodiment. Figure 15 (B) is a schematic diagram showing a thickness measuring device related to the third embodiment.

1: Bonding device (substrate processing device)

10: Displacement sensor (measurer)

10a: Medial displacement sensor

10b: Middle shift sensor

10c: Lateral displacement sensor

11: Mobile unit

11A: Sensor moving part

230: Upper clamp

230a: Field

230b: Field

230c: Field

231: Lower clamp

250: Promotion Department

251: Push pin

W1: upper wafer, first substrate

Wj1: Joint surface

W2: Second substrate

Wj2: Joint surface

Claims (11)

A substrate processing device comprises: a holding part for holding a substrate; a measuring device disposed at a facing position of the substrate held by the holding part and measuring a relative distance to the substrate; a moving part for shifting the relative position between the measuring device and the substrate; and a control part connected to the measuring device and controlling the moving part, wherein the measuring device detects reflected light reflected from the surface of the substrate by a white concentric focusing method with different focal distances set for a plurality of wavelengths, and the control part compares a pre-retained critical value with the light receiving amount of the reflected light, and when the light receiving amount of the reflected light does not meet the critical value, the relative position is shifted by the moving part, and then the relative distance measured by the measuring device is used to calculate the position of the substrate. A substrate processing apparatus as recited in claim 1, wherein, in the comparison, when the amount of light received by the reflected light is greater than the critical value, the control unit does not operate the moving unit but uses the relative distance measured by the measuring device to calculate the position of the substrate. The substrate processing device as described in claim 1, wherein the control unit, in the comparison, when the amount of light received by the reflected light is less than the critical value, shifts the relative position by the moving unit while monitoring the amount of light received by the reflected light; When the amount of light received by the reflected light becomes greater than the critical value, the movement is stopped, and the position of the substrate is calculated using the distance required for the movement and the relative distance measured by the measuring device after the movement. A substrate processing device as described in claim 1, wherein, in the comparison, when the amount of light received by the reflected light is less than the critical value, the control unit moves the relative position by the moving unit only a specified moving distance, and calculates the position of the substrate using the specified moving distance and the relative distance measured by the measuring device after the movement. A substrate processing apparatus as recited in claim 4, wherein the predetermined moving distance is set to be a distance at which the wavelength of the reflected light changes within a range of 50 nm to 200 nm before the focal distance. A substrate processing device comprises: a holding part for holding a substrate; a measuring device disposed at a position facing the substrate held by the holding part, and measuring a relative distance from the substrate; a moving part for shifting the relative position between the measuring device and the substrate; and a control part connected to the measuring device and controlling the moving part, the measuring device detects reflected light reflected from the surface of the substrate by a white concentric focusing method with different focal distances set for a plurality of wavelengths, the control part has mapping information, and corresponds the film type and film thickness of the film formed on the substrate to the target position of the relative distance, The target position is extracted from the mapping information using the information of the film type and the film thickness, the relative position is shifted by the moving unit according to the extracted target position, and the position of the substrate is calculated using the relative distance measured by the measuring device. A substrate processing device as recited in any one of claims 1 to 6, wherein the holding portion comprises: a first holding portion for holding the substrate, i.e., the first substrate; and a second holding portion, which can be arranged at a facing position of the first holding portion and has a suction surface divided into a plurality of areas for suctioning the second substrate; and having a pushing portion for pushing the center of the first substrate toward the second substrate in order to join the first substrate to the second substrate, and the control portion, when pushing the first substrate with the pushing portion, uses the relative distance between the measuring device and the first substrate measured by the measuring device to calculate the position of the first substrate. A substrate processing device as described in any one of claims 1 to 6, wherein the measuring device is respectively disposed at positions facing both sides of the substrate, and the control unit calculates the thickness of the substrate based on the measurement result of the measuring device. A substrate processing apparatus as recited in any one of claims 1 to 6, wherein the film formed on the substrate is a silicon nitride film. A position measurement method is a method for measuring the position of the substrate by measuring the relative distance between the measuring device and the substrate by a measuring device disposed at a facing position of the substrate held by the holding portion, and comprising: a detection step, wherein the measuring device adopts a white concentric focus method in which different focal distances are set for a plurality of wavelengths, and detects the reflected light reflected from the surface of the substrate by the measuring device; a comparison step, wherein a pre-retained critical value is compared with the light receiving amount of the reflected light; a shifting step, wherein in the comparison, if the light receiving amount of the reflected light does not meet the critical value, the relative position is shifted by the moving portion; and a calculation step, wherein after the relative position is shifted, the relative distance measured by the measuring device is used to calculate the position of the substrate. A position measurement method is a method for measuring the position of the substrate by measuring the relative distance between the measuring device and the substrate by a measuring device disposed at a facing position of the substrate held by the holding portion, and comprising: a detection step, wherein the measuring device adopts a white concentric focus method with different focal distances set for a plurality of wavelengths, and detects the reflected light reflected by the surface of the substrate by the measuring device; an extraction step, wherein when the mapping information corresponds to the target position of the relative position of the measuring device and the substrate, the target position is extracted from the mapping information using the information of the film type and the film thickness; a shifting step, wherein the relative position is shifted by a moving portion according to the extracted target position; and The calculation step is to shift the relative position and then use the relative distance measured by the measuring device to calculate the position of the substrate.

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