TW202416297A - Method and apparatus for controlled fusion reactions - Google Patents

Method and apparatus for controlled fusion reactions Download PDF

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TW202416297A
TW202416297A TW111138850A TW111138850A TW202416297A TW 202416297 A TW202416297 A TW 202416297A TW 111138850 A TW111138850 A TW 111138850A TW 111138850 A TW111138850 A TW 111138850A TW 202416297 A TW202416297 A TW 202416297A
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cathode
electrons
potential
protons
accelerated
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李羅權
李昆翰
倪冬冬
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美商聚界潔能美國股份有限公司
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Abstract

A method and an apparatus are provided for performing a fusion reaction. The method comprises providing neutral gas within a gas chamber, supplying energy to the gas chamber to initiate heating of a cathode and ionization of the neutral gas into protons and electrons, causing formation of a conducting channel due to the ionized neutral gas, causing formation of an electron layer outside the cathode based on set of thermionically emitted electrons by the heated cathode, causing acceleration of the electrons towards the cathode to cause the heated cathode to emit a set of secondary electrons due to a potential associated with the electron layer. The set of secondary electrons enhance strength of the electron layer. The method comprises causing formation of an electrostatic potential profile with dips and peaks, due to an electron-ion two-stream instability. The protons are accelerated towards the cathode at peaks and bombardment of the protons into the cathode enables fusion reaction.

Description

用於經控制之融合反應的方法及裝置Method and apparatus for controlled fusion reactions

本發明係關於核反應及反應器。特定言之,本發明係關於用於起始及維持融合反應之緊湊型融合反應器。The present invention relates to nuclear reactions and reactors. In particular, the present invention relates to compact fusion reactors for initiating and maintaining fusion reactions.

隨著發展中國家人口之增加、城市化之加快及用電之擴大,能源需求預期將成倍增長。此外,近年來,歸因於習知能源資源之儲量耗盡及由於從習知能源資源釋放之溫室氣體對環境造成之嚴重影響,在能源產生期間確保減少溫室氣體排放係至關重要的。因此,需要探索替代大規模、永續及無碳形式之能源資源。With the increase in population, urbanization and expansion of electricity consumption in developing countries, energy demand is expected to increase exponentially. In addition, in recent years, due to the depletion of reserves of conventional energy resources and the serious impact of greenhouse gases released from conventional energy resources on the environment, it is crucial to ensure that greenhouse gas emissions are reduced during energy generation. Therefore, there is a need to explore alternative large-scale, sustainable and carbon-free forms of energy resources.

歸因於無碳基載電力生產、無長壽放射性廢料、永續燃料及減小之安全威脅,融合能已被識別為理想未來能源。因此,融合能可對能源部門以及環境做出積極貢獻。核融合係兩個原子組合以形成更大原子,從而產生能量之程序。然而,經控制之融合反應已執行數十年,目標係使融合反應器產生比其吸收更多之能量,即,高浄增益。Fusion energy has been identified as an ideal future energy source due to carbon-free baseload electricity production, no long-lived radioactive waste, sustainable fuels and reduced safety threats. Therefore, fusion energy can make a positive contribution to the energy sector as well as the environment. Nuclear fusion is the process of combining two atoms to form a larger atom, thereby generating energy. However, controlled fusion reactions have been performed for decades, with the goal of making the fusion reactor produce more energy than it absorbs, i.e., high clean gain.

大規模融合研究之先前努力主要集中於為融合點燃創造條件之兩種方法:慣性約束融合(ICF)及磁約束融合。ICF嘗試藉由壓縮及加熱呈小顆粒之形式之融合反應物(諸如氘( 2H)及氚( 3H)之混合物)且憑藉將例如雷射光、電子或離子之高能射束遞送至燃料來激勵燃料而起始融合反應。然而,此ICF融合之持續時間非常短,且可必須在不干擾燃料靶及驅動射束之情況下從反應室移除多餘熱,藉此使ICF成為非永續反應。磁約束嘗試藉由使用磁場約束呈電漿之形式之熱融合燃料而誘發融合。磁融合器件將磁力以用作向心力之方式施加於帶電粒子上,從而導致粒子在電漿內之圓形或螺旋形路徑中移動。磁約束之大多數研究係基於例如托卡馬克(Tokamak)設計,其中熱電漿被約束在環形磁場內。然而,此等托卡馬克反應器亦無法在輸出能量及輸入能量方面達成高能量浄功率增益以便將融合反應用作永續能量源。為此,全部可信的先前方法皆面臨約束及工程問題。 Previous efforts in large-scale fusion research have focused primarily on two methods of creating conditions for fusion ignition: inertial confinement fusion (ICF) and magnetic confinement fusion. ICF attempts to initiate fusion reactions by compressing and heating fusion reactants in the form of small particles, such as a mixture of deuterium ( 2H ) and tritium ( 3H ), and stimulating the fuel by delivering a high-energy beam, such as laser light, electrons, or ions, to the fuel. However, the duration of such ICF fusion is very short, and excess heat may have to be removed from the reaction chamber without disturbing the fuel target and drive beam, thereby making ICF a non-sustainable reaction. Magnetic confinement attempts to induce fusion by confining hot fusion fuel in the form of a plasma using a magnetic field. Magnetic fusion devices apply magnetic forces to charged particles in a way that acts as a centripetal force, causing the particles to move in a circular or spiral path within the plasma. Most research on magnetic confinement is based on designs such as the Tokamak, in which a hot plasma is confined within a toroidal magnetic field. However, these Tokamak reactors also fail to achieve high energy net power gains in terms of output energy and input energy in order to use fusion reactions as a sustainable energy source. For this reason, all credible previous approaches face constraints and engineering problems.

實務上,僅融合反應器之輸出融合能量之一部分可被轉化為有用形式。習知思維認為僅不具有大量中性粒子之強電離電漿可係有利的。強電離電漿限制可在融合反應器中達成之粒子密度及能量約束時間。因此,在特定實驗設備中,勞森(Lawson)準則被用作經控制融合反應之基準。In practice, only a portion of the output fusion energy of a fusion reactor can be converted into a useful form. Anecdotal thinking suggests that only strongly ionized plasmas without a large number of neutral particles can be beneficial. Strongly ionized plasmas limit the particle density and energy confinement time that can be achieved in a fusion reactor. Therefore, in certain experimental settings, the Lawson criterion is used as a benchmark for controlled fusion reactions.

勞森準則之常用公式(稱為三重積)係如下: The commonly used formula for Lawson's criterion (called the triple product) is as follows:

特定言之,勞森準則陳述,粒子密度(n)、溫度(T)及約束時間(τ E)之乘積必須大於取決於帶電融合產物之能量(E ch)、波茲曼(Boltzmann)常數(k B)、融合截面(σ)、相對速度(v)及溫度之數值,以便達到點燃條件。針對氘-氚反應,在k BT=14 keV出現三重積之最小值,且三重積之數值係約3×10 21keV s/m 3。為了滿足勞森準則,融合反應器經建構為大的、複雜、難以管理、昂貴,且在經濟上尚不可行。實務上,使用D-T融合反應達成正能量平衡需要超過攝氏150,000,000度之溫度。針對基於質子-硼之融合反應,勞森準則表明所需溫度必須實質上更高。由於習知思維認為永續融合反應需要高溫及強電離電漿,因此用於融合反應之原子之廉價實體圍阻體係困難的。因此,基於勞森準則來設計融合反應器可為不可行的。 Specifically, the Lawson criterion states that the product of the particle density (n), temperature (T), and confinement time (τ E ) must be greater than a value determined by the energy of the charged fusion products (E ch ), the Boltzmann constant (k B ), the fusion cross section (σ), the relative velocity (v), and the temperature in order to achieve ignition conditions. For the deuterium-tritium reaction, the triple product has a minimum at k B T = 14 keV and has a value of about 3 × 10 21 keV s/m 3 . In order to satisfy the Lawson criterion, fusion reactors have been constructed to be large, complex, unmanageable, expensive, and not yet economically feasible. In practice, achieving positive energy balance using DT fusion reactions requires temperatures in excess of 150,000,000 degrees Celsius. For proton-boron based fusion reactions, Lawson's criterion suggests that the required temperature must be substantially higher. Since conventional wisdom holds that sustained fusion reactions require high temperatures and strongly ionized plasmas, cheap physical containment of atoms for fusion reactions is difficult. Therefore, designing fusion reactors based on Lawson's criterion may be infeasible.

已提出多種方法來捕獲由核融合反應產生之能量。一種此方法係使用質子及硼之無中子融合。最近,由於硼在自然界中更為豐富且易於處置,質子-硼(p- 11B)核融合反應已變得具有吸引力。此外,來自質子-硼(p- 11B)核融合反應之融合功率主要以帶電α粒子而非中子釋放,因此,質子-硼核融合反應亦被稱為無中子反應。無中子質子-硼核融合反應可寫作: p+ 11B→3 4He+8.68 MeV                            (1) Various methods have been proposed to capture the energy produced by nuclear fusion reactions. One such method is to use the aneutronic fusion of protons and boron. Recently, proton-boron (p- 11 B) fusion reactions have become attractive because boron is more abundant in nature and easier to handle. In addition, the fusion power from proton-boron (p- 11 B) fusion reactions is mainly released as charged alpha particles rather than neutrons, so proton-boron fusion reactions are also called aneutronic reactions. The aneutronless proton-boron fusion reaction can be written as: p+ 11 B→3 4 He+8.68 MeV (1)

如上文展示,無中子質子-硼核融合反應可產生3個 4He且釋放8.68 MeV之能量,且不產生中子。歸因於無中子反應或實質上無中子反應,此能量係清潔的。 As shown above, a neutronless proton-boron fusion reaction can produce 3 4 He and release 8.68 MeV of energy without producing neutrons. Due to the neutronless reaction or the substantially neutronless reaction, this energy is clean.

在核融合反應中,融合反應速率R可藉由以下表達式估計: R= n 1n 2〈σu〉                        (2) In nuclear fusion reactions, the fusion reaction rate R can be estimated by the following expression: R = n 1 n 2 〈σu〉 (2)

其中n 1及n 2係反應物密度,σ係融合截面,且u係速度。平均項〈σu〉被稱為反應性。在特定習知融合技術中,超熱電漿旨在增加反應速率,即,藉由增加電漿之溫度來增加反應速率。為此,尋找以經濟、安全、可靠且對環境無害之方式維持融合反應之方式已成為挑戰。 where n1 and n2 are the reactant densities, σ is the fusion cross section, and u is the velocity. The average term 〈σu〉 is called the reactivity. In certain known fusion technologies, superheated plasma aims to increase the reaction rate, i.e., by increasing the temperature of the plasma. To this end, it has become a challenge to find ways to maintain the fusion reaction in an economical, safe, reliable and environmentally friendly manner.

因此,需要克服與習知融合反應(尤其係習知的基於質子-硼之融合反應)相關聯之缺點,例如,增加反應速率要求、較高功率增益及降低溫度要求。特定言之,需要開發一種產生更多融合功率,使得融合能可成為商業上可行之能源來源之融合反應器。Therefore, there is a need to overcome the disadvantages associated with known fusion reactions, particularly known proton-boron based fusion reactions, such as increased reaction rate requirements, higher power gain, and reduced temperature requirements. In particular, there is a need to develop a fusion reactor that produces more fusion power so that fusion energy can become a commercially viable energy source.

本文中提供一種用於執行經控制之融合反應之方法及裝置。在一個態樣中,用於執行該經控制之融合反應之該方法包括在氣室內提供中性氣體,該氣室包括陽極及陰極以及分散在該氣室內之中性氣體。根據實施例,該方法包括將能量供應至該氣室。該能量之該供應至少起始:加熱該陰極;及將該中性氣體電離為質子及電子。根據實施例,該方法包括歸因於該電離中性氣體而導致形成導電通道。根據實施例,該方法包括基於由該經加熱陰極熱離子地發射之一組電子而導致在該陰極之外表面外部形成電子層。根據實施例,該方法包括:歸因於與該電子層相關聯之電位而導致來自該電離中性氣體之該等電子加速朝向該陰極以導致該經加熱陰極發射一組二次電子。該組二次電子增強該電子層之強度。根據實施例,該方法包括歸因於電子-離子雙流不穩定性而導致在該導電通道內形成靜電位分佈(electrostatic potential profile)。該靜電位分佈包括複數個谷值(dip)及複數個峰值。來自該電離中性氣體之該等質子在該複數個電位峰值下加速朝向該陰極,且該等加速質子轟擊至該陰極中實現該經控制之融合反應。A method and apparatus for performing a controlled fusion reaction are provided herein. In one aspect, the method for performing the controlled fusion reaction includes providing a neutral gas in a gas chamber, the gas chamber including an anode and a cathode and the neutral gas dispersed in the gas chamber. According to an embodiment, the method includes supplying energy to the gas chamber. The supply of the energy at least initiates: heating the cathode; and ionizing the neutral gas into protons and electrons. According to an embodiment, the method includes causing a conductive channel to form due to the ionized neutral gas. According to an embodiment, the method includes causing an electron layer to form outside the outer surface of the cathode based on a group of electrons thermally emitted by the heated cathode. According to an embodiment, the method includes: causing the electrons from the ionized neutral gas to accelerate toward the cathode due to the potential associated with the electron layer to cause the heated cathode to emit a group of secondary electrons. The group of secondary electrons enhances the strength of the electron layer. According to an embodiment, the method includes forming an electrostatic potential profile in the conductive channel due to electron-ion double current instability. The electrostatic potential profile includes a plurality of dips and a plurality of peaks. The protons from the ionized neutral gas are accelerated toward the cathode at the plurality of potential peaks, and the accelerated protons impact the cathode to achieve the controlled fusion reaction.

根據一些實例實施例,該方法進一步包括:導致初始放電電流加熱該陰極且使該中性氣體電離;及歸因於由該經加熱陰極發射之該組熱離子發射電子而導致形成該複數個電位谷值之第一電位谷值。According to some example embodiments, the method further includes: causing an initial discharge current to heat the cathode and ionize the neutral gas; and causing a first potential valley of the plurality of potential valleys to be formed due to electrons emitted by the set of thermal ions emitted by the heated cathode.

根據一些實例實施例,該方法進一步包括導致該等電子在與該第一電位谷值相關聯之區域與該陰極之間加速以轟擊該陰極。該區域位於該陽極與該陰極之間。根據實施例,該方法進一步包括歸因於該等加速電子在該陰極處之該轟擊而導致發射該組二次電子。根據實施例,該方法進一步包括歸因於由該陰極發射之該組二次電子而導致在該複數個電位谷值之該第一電位谷值下強化該電子層。根據實施例,該方法進一步包括歸因於該強化電子層而導致在該導電通道內形成該靜電位分佈,具有該靜電位分佈之該導電通道與該增強電子層及該強化第一電位谷值之該形成相關聯。According to some example embodiments, the method further includes causing the electrons to be accelerated between a region associated with the first potential valley and the cathode to impact the cathode. The region is located between the anode and the cathode. According to an embodiment, the method further includes causing the group of secondary electrons to be emitted due to the impact of the accelerated electrons at the cathode. According to an embodiment, the method further includes causing the electronic layer to be strengthened at the first potential valley of the plurality of potential valleys due to the group of secondary electrons emitted by the cathode. According to an embodiment, the method further includes forming the electrostatic potential distribution in the conductive channel due to the enhanced electron layer, the conductive channel having the electrostatic potential distribution is associated with the enhanced electron layer and the formation of the enhanced first potential valley.

根據一些實例實施例,該方法進一步包括歸因於該陰極之該加熱而導致發射該組熱離子發射電子。該組熱離子發射電子從該陰極之該表面發射至與該第一電位谷值相關聯之該區域中。根據實施例,該方法進一步包括導致在該陰極之該表面外部局部形成具有負電荷密度之該電子層。According to some example embodiments, the method further includes causing the group of thermal ion emission electrons to be emitted due to the heating of the cathode. The group of thermal ion emission electrons are emitted from the surface of the cathode to the region associated with the first potential valley. According to an embodiment, the method further includes causing the electron layer having a negative charge density to be locally formed outside the surface of the cathode.

根據一些實例實施例,該方法進一步包括將能量供應至該氣室以使該中性氣體部分電離以產生電漿。該電漿包括該等質子、該等電子、正離子及負離子。根據實施例,該方法進一步包括導致該等電子及該等負離子加速朝向該陰極以導致該經轟擊陰極發射該組二次電子。According to some example embodiments, the method further includes supplying energy to the gas chamber to partially ionize the neutral gas to produce plasma. The plasma includes the protons, the electrons, positive ions and negative ions. According to an embodiment, the method further includes causing the electrons and the negative ions to accelerate toward the cathode to cause the struck cathode to emit the set of secondary electrons.

根據一些實例實施例,該方法進一步包括歸因於該電子層之該增強強度而導致在該氣室之該陰極外部形成該第一電位谷值之區域。該第一電位谷值之該區域在該電子層之中心處具有最小電位值。第一電場從該陰極指向該電子層之該中心,且第二電場從該陽極指向該電子層之該中心。According to some example embodiments, the method further includes forming a region of the first potential valley outside the cathode of the gas cell due to the enhanced strength of the electronic layer. The region of the first potential valley has a minimum potential value at the center of the electronic layer. A first electric field is directed from the cathode to the center of the electronic layer, and a second electric field is directed from the anode to the center of the electronic layer.

根據一些實例實施例,該方法進一步包括導致負電荷及正電荷加速。該等負電荷包括該等電子及該等負離子,且該等正電荷包括該等質子及該等正離子。該等負電荷從該陰極加速朝向該陽極,且該等正電荷從該陽極加速朝向該陰極。該等正電荷及該等負電荷在相反方向上加速,且具有速度差。根據實施例,該方法進一步包括歸因於該等正電荷與該等負電荷之間之該速度差而導致該氣室內之該電子-離子雙流不穩定性。According to some example embodiments, the method further includes causing negative charges and positive charges to accelerate. The negative charges include the electrons and the negative ions, and the positive charges include the protons and the positive ions. The negative charges are accelerated from the cathode toward the anode, and the positive charges are accelerated from the anode toward the cathode. The positive charges and the negative charges are accelerated in opposite directions with a speed difference. According to an embodiment, the method further includes causing the electron-ion dual current instability in the gas chamber due to the speed difference between the positive charges and the negative charges.

根據一些實例實施例,該方法進一步包括在該複數個谷值之各者下導致該等負電荷加速朝向該陰極以導致該陰極發射該組二次電子。根據實施例,該方法進一步包括在該複數個峰值之各者下導致該等正電荷加速朝向該陰極以轟擊至該陰極中,其中該等加速質子及該等正離子至該陰極中之該轟擊以動能發生。According to some example embodiments, the method further includes causing the negative charges to accelerate toward the cathode at each of the plurality of valleys to cause the cathode to emit the set of secondary electrons. According to an embodiment, the method further includes causing the positive charges to accelerate toward the cathode at each of the plurality of peaks to impact into the cathode, wherein the impact of the accelerated protons and the positive ions into the cathode occurs with kinetic energy.

根據一些實例實施例,轟擊至該陰極中之各帶電粒子之該動能係在1 keV至100 keV之範圍內。According to some example embodiments, the kinetic energy of each charged particle impacting the cathode is in the range of 1 keV to 100 keV.

根據一些實例實施例,該方法進一步包括跨該氣室施加加熱源以至少執行:該陰極之該加熱;及將該中性氣體電離為該等質子及該等電子。根據實施例,該加熱源包括以下之至少一者:超導磁體源、永久磁體源、電磁體源、射頻(RF)源、微波源、電場源、電極源、雷射源、離子槍源或其等之組合。According to some example embodiments, the method further comprises applying a heating source across the gas chamber to perform at least: the heating of the cathode; and ionizing the neutral gas into the protons and the electrons. According to an embodiment, the heating source comprises at least one of the following: a superconducting magnet source, a permanent magnet source, an electromagnetic source, a radio frequency (RF) source, a microwave source, an electric field source, an electrode source, a laser source, an ion gun source, or a combination thereof.

根據一些實例實施例,該導電通道之直徑係在0.01毫米至1毫米之範圍內。According to some exemplary embodiments, the diameter of the conductive channel is in the range of 0.01 mm to 1 mm.

根據一些實例實施例,該中性氣體之密度係在1×10 20至1×10 25m -3之範圍內。 According to some exemplary embodiments, the density of the neutral gas is in the range of 1×10 20 to 1×10 25 m -3 .

根據一些實例實施例,該中性氣體至少包括氫(H 2)氣體。 According to some exemplary embodiments, the neutral gas includes at least hydrogen (H 2 ) gas.

根據一些實例實施例,藉由外部施加10伏特至1000伏特之範圍內之電壓來為該氣室通電。According to some example embodiments, the gas chamber is energized by externally applying a voltage in the range of 10 volts to 1000 volts.

根據一些實例實施例,該陰極包括富硼材料。該富硼材料包括以下之至少一者:六硼化鑭(LaB 6)、六硼化鈰(CeB 6)、硼化鋰、純硼或氮化硼。根據實施例,該陰極為該經控制之融合反應提供硼。 According to some exemplary embodiments, the cathode comprises a boron-rich material. The boron-rich material comprises at least one of the following: lumen hexaboride (LaB 6 ), cerium hexaboride (CeB 6 ), lithium boride, pure boron or boron nitride. According to an embodiment, the cathode provides boron for the controlled fusion reaction.

本文中揭示之實施例可提供一種用於執行經控制之融合反應之裝置。該裝置包括氣室,該氣室包括圍封在該氣室內之陽極及陰極以及分佈在該氣室內之中性氣體。該裝置進一步包括經組態以將能量供應至該氣室之能量源。根據實施例,該能量之該供應導致至少起始:加熱該陰極;及將該中性氣體電離為質子及電子。根據實施例,歸因於該電離中性氣體,該能量之該供應導致形成導電通道。根據實施例,基於由該經加熱陰極熱離子地發射之一組電子,該能量之該供應導致在該陰極之外表面外部形成電子層。根據實施例,歸因於與該電子層相關聯之電位,該能量之該供應導致來自該電離中性氣體之該等電子加速朝向該陰極以導致該經加熱陰極發射一組二次電子。該組二次電子增強該電子層之強度。根據實施例,歸因於電子-離子雙流不穩定性,該能量之該供應導致在該導電通道中形成靜電位分佈。該靜電位分佈具有複數個谷值及複數個峰值。來自該電離中性氣體之該等質子在該複數個電位峰值下加速朝向該陰極,且該等加速質子轟擊至該陰極中實現該經控制之融合反應。Embodiments disclosed herein may provide a device for performing a controlled fusion reaction. The device includes a gas chamber, the gas chamber including an anode and a cathode enclosed within the gas chamber and a neutral gas distributed within the gas chamber. The device further includes an energy source configured to supply energy to the gas chamber. According to an embodiment, the supply of the energy causes at least the initiation of: heating the cathode; and ionizing the neutral gas into protons and electrons. According to an embodiment, the supply of the energy causes the formation of a conductive channel due to the ionized neutral gas. According to an embodiment, the supply of the energy causes the formation of an electron layer outside the outer surface of the cathode based on a group of electrons thermally emitted by the heated cathode. According to an embodiment, due to the potential associated with the electron layer, the supply of energy causes the electrons from the ionized neutral gas to be accelerated toward the cathode to cause the heated cathode to emit a group of secondary electrons. The group of secondary electrons enhances the strength of the electron layer. According to an embodiment, due to the electron-ion double current instability, the supply of energy causes a static potential distribution to be formed in the conductive channel. The static potential distribution has a plurality of valleys and a plurality of peaks. The protons from the ionized neutral gas are accelerated toward the cathode at the plurality of potential peaks, and the accelerated protons impact into the cathode to achieve the controlled fusion reaction.

前述發明內容僅為闡釋性且不旨在以任何方式進行限制。除上文描述之闡釋性態樣、實施例及特徵之外,進一步態樣、實施例及特徵將藉由參考圖式及以下詳細描述而變得顯而易見。The foregoing invention is illustrative only and is not intended to be limiting in any way. In addition to the illustrative aspects, embodiments, and features described above, further aspects, embodiments, and features will become apparent by reference to the drawings and the following detailed description.

在以下描述中,出於解釋目的,闡述許多特定細節以提供對本發明之透徹理解。然而,熟習此項技術者將明白,可在不具有此等特定細節之情況下實踐本發明。在其他例項中,僅以方塊圖形式展示系統及裝置以避免模糊本發明。In the following description, for the purpose of explanation, many specific details are set forth to provide a thorough understanding of the present invention. However, those skilled in the art will appreciate that the present invention can be practiced without these specific details. In other examples, systems and devices are shown in block diagram form only to avoid obscuring the present invention.

現將在下文中參考隨附圖式更充分描述本發明之一些實施例,其中展示本發明之一些而非全部實施例。實際上,本發明之各種實施例可以許多不同形式體現,且不應被解釋為限於本文中闡述之實施例;實情係,此等實施例經提供,使得本發明將滿足適用法律要求。貫穿全文相同元件符號指代相同元件。而且,本說明書中對「一項實施例」或「一實施例」之參考意謂結合實施例描述之特定特徵、結構或特性被包含於本發明之至少一項實施例中。在說明書中之各個位置出現之片語「在一項實施例中」不一定全部指代同一實施例,亦不一定係與其他實施例相互排斥之分開的或替代實施例。此外,本文中之術語「一」及「一個」不表示數量之一限制,而是表示所指涉項目之至少一者之存在。此外,描述各種特徵,其等可藉由一些實施例而非藉由其他實施例展現。類似地,描述各種要求,其等可為針對一些實施例而非針對其他實施例之要求。因此,任何此等術語之使用不應被視為限制本發明之實施例之精神及範疇。Some embodiments of the present invention will now be more fully described below with reference to the accompanying drawings, in which some but not all embodiments of the present invention are shown. In fact, various embodiments of the present invention may be embodied in many different forms and should not be construed as limited to the embodiments described herein; rather, such embodiments are provided so that the present invention will satisfy applicable legal requirements. The same element symbols refer to the same elements throughout the text. Moreover, references in this specification to "an embodiment" or "an embodiment" mean that the specific features, structures, or characteristics described in conjunction with the embodiment are included in at least one embodiment of the present invention. The phrase "in an embodiment" appearing in various places in the specification does not necessarily all refer to the same embodiment, nor is it necessarily a separate or alternative embodiment that is mutually exclusive with other embodiments. Furthermore, the terms "a" and "an" herein do not denote a limitation of quantity, but rather denote the presence of at least one of the referenced items. Furthermore, various features are described that may be exhibited by some embodiments but not by other embodiments. Similarly, various requirements are described that may be requirements for some embodiments but not for other embodiments. Therefore, the use of any such terms should not be construed as limiting the spirit and scope of the embodiments of the present invention.

在本文中出於闡釋性目的描述實施例且其等經受許多變化。應理解,在不脫離本發明之精神或範疇之情況下,當情況可能暗示或有利時,考慮各種省略及等效物替換,但其等旨在涵蓋應用或實施方案。此外,應理解,本文中採用之措辭及術語係出於描述之目的且不應被視為限制性。本描述內利用之任何標題係僅為方便起見,且不具有法律或限制效應。 定義 Embodiments are described herein for illustrative purposes and are subject to numerous variations. It is understood that various omissions and substitutions of equivalents are contemplated as circumstances may suggest or be advantageous without departing from the spirit or scope of the invention, but are intended to cover applications or implementations. Furthermore, it is understood that the phraseology and terminology employed herein are for descriptive purposes and should not be construed as limiting. Any headings utilized within this description are for convenience only and have no legal or limiting effect. Definitions

貫穿本發明,術語「融合」指代當兩個或更多個原子之原子核組合時發生之核反應,藉此經組合原子核具有小於或等於 62Ni之質量數。藉由此定義,經組合原子核係不穩定的,且因此將藉由通常衰變為多個產物原子核來釋放其多餘能量,其中可能包含中子。特定言之,產物之總質量小於反應物之組合質量。質量差根據愛因斯坦(Einstein)方程式E=mc 2釋放為能量。從融合反應獲得之能量係基於核結合能之差。由於真空中之光速「c」非常大,因此少量丟失質量變為大量能量。依據本發明,術語「融合」與「融合反應」及「核融合」可互換地使用。 Throughout the present invention, the term "fusion" refers to a nuclear reaction that occurs when the nuclei of two or more atoms combine, whereby the combined nuclei have a mass number less than or equal to 62 Ni. By this definition, the combined nuclei are unstable and will therefore release their excess energy by generally decaying into multiple product nuclei, which may include neutrons. Specifically, the total mass of the products is less than the combined mass of the reactants. The mass difference is released as energy according to the Einstein equation E=mc 2. The energy gained from a fusion reaction is based on the difference in the nuclear binding energies. Since the speed of light "c" in a vacuum is very large, a small amount of lost mass becomes a large amount of energy. According to the present invention, the term "fusion" may be used interchangeably with "fusion reaction" and "nuclear fusion".

貫穿本發明,術語「無中子融合」指代融合反應之一種形式,其中從融合反應釋放之能量極少由中子攜載。在無中子融合反應中釋放之能量係呈高能帶電粒子之形式,通常係質子或α粒子。依據本發明之實施例,可藉由融合質子及硼之原子核來執行無中子融合反應。質子-硼無中子融合反應以高能α粒子之形式釋放其能量,而不產生中子,藉此使所釋放能量更清潔且更易於使用。Throughout the present invention, the term "aneutronic fusion" refers to a form of fusion reaction in which very little of the energy released from the fusion reaction is carried by neutrons. The energy released in an aneutronic fusion reaction is in the form of high-energy charged particles, usually protons or alpha particles. According to embodiments of the present invention, an aneutronic fusion reaction can be performed by fusing protons and boron nuclei. The proton-boron aneutronic fusion reaction releases its energy in the form of high-energy alpha particles without producing neutrons, thereby making the released energy cleaner and easier to use.

貫穿本發明,術語「融合反應器」指代用於產生在融合反應中釋放之能量(或融合能)之器件或裝置或系統。術語「融合反應器」與「融合發電廠」可互換地使用。Throughout the present invention, the term "fusion reactor" refers to a device or apparatus or system for generating the energy released in a fusion reaction (or fusion energy). The terms "fusion reactor" and "fusion power plant" may be used interchangeably.

貫穿本發明,術語「離子」、「電離原子」或「帶電粒子」指代具有比(若干)質子之總數多至少一個電子或具有比(若干)電子之總數多至少一個質子之原子或粒子。Throughout the present invention, the term "ion", "ionized atom" or "charged particle" refers to an atom or particle that has at least one more electron than the total number of proton(s) or at least one more proton than the total number of electron(s).

貫穿本發明,術語「中性物種」或「中性粒子」指代具有中性電荷之原子或分子。特定言之,中性原子可具有相同數目個電子及質子,即,對應於其原子序數。Throughout the present invention, the term "neutral species" or "neutral particle" refers to an atom or molecule with a neutral charge. Specifically, a neutral atom may have the same number of electrons and protons, i.e., corresponding to its atomic number.

貫穿本發明,術語「陰極」指代帶負電荷或接地之電極。此外,術語「陽極」指代帶正電荷之電極。依據本發明,陰極係由富硼材料製成,例如,六硼化鑭(LaB 6)。 Throughout the present invention, the term "cathode" refers to an electrode that is negatively charged or grounded. In addition, the term "anode" refers to an electrode that is positively charged. According to the present invention, the cathode is made of a boron-rich material, such as lumen hexaboride (LaB 6 ).

貫穿本發明,術語「氣室」指代用於氣體之殼體。依據本發明,氣室經填充有中性氣體,且氣室亦圍封陰極及陽極。在此方面,氣室可使用電能來促進氣室內部之中性氣體之非自發電離。例如,氣室可圍封中性氣體、陰極及陽極以執行融合反應。Throughout the present invention, the term "gas cell" refers to a housing for a gas. According to the present invention, the gas cell is filled with a neutral gas, and the gas cell also encloses a cathode and an anode. In this regard, the gas cell can use electrical energy to promote non-spontaneous ionization of the neutral gas inside the gas cell. For example, the gas cell can enclose a neutral gas, a cathode, and an anode to perform a fusion reaction.

貫穿本發明,術語「電漿」指代分散在室中之物質的狀態。在電漿中,一些電子可能已從其等之原子剝離。由於電漿中之粒子(電子及離子)具有電荷,因此電漿之運動及行為受到電場及磁場之影響。當一或多個電子從原子分離及/或原子可捕獲一或多個多餘電子時,產生電漿。電離原子可丟失至少一個電子,或電離原子可被完全剝離電子,從而留下(一或多個質子且通常一些中子之)原子核。丟失電子之原子被稱為「正離子」。正離子可具有正電荷,此係因為其等具有之帶正電荷之質子多於帶負電荷之電子。相反地,具有多餘電子之原子被稱為「負離子」。負離子可具有負電荷,此係因為其等具有之帶負電荷之電子多於帶正電荷之質子。電漿通常係此等帶正電荷之離子或質子、帶負電荷之離子及電子之混合物。 定義結束 Throughout this disclosure, the term "plasma" refers to the state of matter dispersed in a chamber. In a plasma, some electrons may have been stripped from their atoms. Because the particles (electrons and ions) in a plasma have an electric charge, the motion and behavior of the plasma is affected by electric and magnetic fields. Plasma is created when one or more electrons separate from atoms and/or atoms may capture one or more excess electrons. An ionized atom may lose at least one electron, or an ionized atom may be completely stripped of electrons, leaving behind a nucleus (of one or more protons and usually some neutrons). Atoms that lose electrons are called "positive ions." Positive ions can have a positive charge because they have more positively charged protons than negatively charged electrons. Conversely, atoms with excess electrons are called "negative ions." Negative ions can have a negative charge because they have more negatively charged electrons than positively charged protons. Plasma is usually a mixture of these positively charged ions or protons, negatively charged ions, and electrons. End of definition

本文中提供根據實例實施例之用於起始及維持經控制之融合反應之方法及裝置。本文中揭示之方法及裝置使能夠執行用於產生清潔能源之無中子融合反應。本文中揭示之方法及裝置使能夠在實質上較低溫度下起始融合反應。本文中揭示之方法及裝置實現融合反應之商業可行性,使得所產生之融合能可用於例如獲得熱、產生電力等。本文中揭示之方法及裝置進一步使能夠設計及建構可在其內發生融合反應之緊湊型融合反應器。此等緊湊型融合反應器具有減小的大小及重量,易於處置,且具有較不複雜設計。Methods and apparatus for initiating and maintaining controlled fusion reactions according to example embodiments are provided herein. The methods and apparatus disclosed herein enable aneutronic fusion reactions to be performed for the generation of clean energy. The methods and apparatus disclosed herein enable the initiation of fusion reactions at substantially lower temperatures. The methods and apparatus disclosed herein enable the commercial viability of fusion reactions such that the fusion energy generated can be used, for example, to obtain heat, generate electricity, etc. The methods and apparatus disclosed herein further enable the design and construction of compact fusion reactors in which fusion reactions can occur. Such compact fusion reactors have reduced size and weight, are easy to handle, and have a less complex design.

本文中揭示之方法及裝置可提供用於執行融合反應之氣室。在實例中,氣室可包含可接地之陰極、陽極及分散在氣室內之氣體。在此方面,將電壓(即,電能)施加至氣室以使氣體在氣室內電離以形成電漿且加熱氣室內之接地陰極。歸因於氣體之電離,可在陰極與陽極之間形成導電通道。此外,經加熱陰極可導致一組熱離子發射電子之熱離子發射。因此,可在陰極之外表面外部形成電子層。此外,歸因於與陰極外部之電子層相關聯之負電位,電子可從電漿加速朝向陰極。此可導致經加熱陰極進一步發射一組二次電子。該組二次電子可藉由增加電子層之負電荷密度來強化該電子層。強化電子層可導致氣室內之電子-離子雙流不穩定性,此在導電通道內產生靜電位分佈。該靜電位分佈包括複數個谷值及複數個峰值。在此方面,來自電離中性氣體(即,電漿)之質子(或正電荷)在複數個電位峰值下加速朝向陰極。隨後,加速質子可轟擊至陰極中以實現經控制之融合反應。The methods and devices disclosed herein may provide a gas chamber for performing a fusion reaction. In an example, the gas chamber may include a grounded cathode, an anode, and a gas dispersed within the gas chamber. In this regard, a voltage (i.e., electrical energy) is applied to the gas chamber to ionize the gas within the gas chamber to form a plasma and heat the grounded cathode within the gas chamber. Due to the ionization of the gas, a conductive path may be formed between the cathode and the anode. In addition, the heated cathode may cause thermal ion emission of a set of thermal ion emission electrons. Therefore, an electron layer may be formed outside the outer surface of the cathode. In addition, due to the negative potential associated with the electron layer outside the cathode, electrons may be accelerated from the plasma toward the cathode. This may cause the heated cathode to further emit a set of secondary electrons. The group of secondary electrons can strengthen the electron layer by increasing the negative charge density of the electron layer. Strengthening the electron layer can cause electron-ion double current instability in the gas chamber, which produces a static potential distribution in the conductive channel. The static potential distribution includes a plurality of valleys and a plurality of peaks. In this regard, protons (or positive charges) from an ionized neutral gas (i.e., plasma) are accelerated toward the cathode at a plurality of potential peaks. Subsequently, the accelerated protons can impact into the cathode to achieve a controlled fusion reaction.

圖1繪示根據本發明之實施例之用於起始及維持融合反應之裝置100之圖。根據本發明之實施例,藉由供應電位來起始融合反應,且藉由在陰極與陽極之間建立具有靜電位分佈之導電通道來維持融合反應。導電通道使質子及電子加速以轟擊至陰極上以執行核融合反應。FIG1 shows a diagram of a device 100 for initiating and maintaining a fusion reaction according to an embodiment of the present invention. According to an embodiment of the present invention, a fusion reaction is initiated by supplying an electric potential, and a fusion reaction is maintained by establishing a conductive channel with a static potential distribution between a cathode and an anode. The conductive channel accelerates protons and electrons to bombard the cathode to perform a nuclear fusion reaction.

裝置包括氣室102。氣室102包括一或多個室壁以形成經圍封氣室102。在一項實施例中,氣室102經填充有中性氣體104。在此方面,中性氣體104可由入口引入以達成所需壓力。例如,氣室102內之壓力可在1毫托(mTorr)至約100托之範圍內。根據實施例,裝置100進一步包括用於將電能供應至氣室102之輸入電源供應器106。例如,電源供應器106可為恆定電壓源、恆定電流源或恆定功率源。The device includes an air chamber 102. The air chamber 102 includes one or more chamber walls to form an enclosed air chamber 102. In one embodiment, the air chamber 102 is filled with a neutral gas 104. In this regard, the neutral gas 104 can be introduced from an inlet to achieve a desired pressure. For example, the pressure in the air chamber 102 can be in the range of 1 mTorr to about 100 Torr. According to an embodiment, the device 100 further includes an input power supply 106 for supplying electrical energy to the air chamber 102. For example, the power supply 106 can be a constant voltage source, a constant current source, or a constant power source.

氣室102進一步包括氣室102之一個端處之一或多個陽極108及氣室102之另一端處之陰極110。在實例中,陽極108與陰極110之間之距離可為可調整的。在實例中,陽極108係長絲。例如,陽極108可由不銹鋼、鎢、銅、鉭、六硼化鑭、碳及類似物製成。在一項實施例中,陰極110係由富硼材料製成。在實例中,陰極110具有在1 cm至20 cm之範圍內之長度。在另一實例中,陰極110具有在3 cm至10 cm之範圍內之長度。例如,陰極110可塗覆有電子發射材料。為此,陰極之反應物係硼或( 11B)。此富硼材料之實例可包含但不限於六硼化鑭(LaB 6)、六硼化鈰(CeB 6)、硼化鋰(LiB 2)、純硼(B)及氮化硼(BN)。依據本發明之實施例,陰極110可由六硼化鑭或LaB 6板片製成,且可在被加熱時發射電子。 The air chamber 102 further includes one or more anodes 108 at one end of the air chamber 102 and a cathode 110 at the other end of the air chamber 102. In an example, the distance between the anode 108 and the cathode 110 can be adjustable. In an example, the anode 108 is a filament. For example, the anode 108 can be made of stainless steel, tungsten, copper, tantalum, hexaboride, carbon and the like. In one embodiment, the cathode 110 is made of a boron-rich material. In an example, the cathode 110 has a length in the range of 1 cm to 20 cm. In another example, the cathode 110 has a length in the range of 3 cm to 10 cm. For example, cathode 110 may be coated with an electron emitting material. For this purpose, the reactant of the cathode is boron or ( 11B ). Examples of such boron-rich materials may include but are not limited to lumen hexaboride ( LaB6 ), cerium hexaboride ( CeB6 ), lithium boride ( LiB2 ), pure boron (B) and boron nitride (BN). According to an embodiment of the present invention, cathode 110 may be made of lumen hexaboride or LaB6 sheets and may emit electrons when heated.

在一項實施例中,輸入電源供應器106跨陽極108及陰極110施加電位。依據本發明之實例,跨陽極108及陰極110對氣室102施加電壓。在實例中,藉由外部施加10伏特至1000伏特之範圍內之電壓來為氣室102通電。In one embodiment, the input power supply 106 applies a potential across the anode 108 and the cathode 110. According to an embodiment of the present invention, a voltage is applied to the gas cell 102 across the anode 108 and the cathode 110. In an embodiment, the gas cell 102 is energized by externally applying a voltage in the range of 10 volts to 1000 volts.

在實例中,使用絕緣材料對氣室102進行絕緣。例如,絕緣材料係由氮化硼(BN)或任何其他適合不導電材料製成。In an example, an insulating material is used to insulate the gas chamber 102. For example, the insulating material is made of boron nitride (BN) or any other suitable non-conductive material.

氣室102經填充有中性氣體104。例如,中性氣體104可至少包括分子氫(H 2)氣體。在其他實例中,中性氣體104可為H 2氣體連同其他氣體之混合物。在實例中,中性氣體104可包括H 2氣體及氬(Ar)氣體。例如,中性氣體104 (下文中亦被稱為H 2氣體104)之密度可在1×10 20至1×10 25m -3之範圍內。 The gas chamber 102 is filled with a neutral gas 104. For example, the neutral gas 104 may include at least molecular hydrogen (H 2 ) gas. In other examples, the neutral gas 104 may be a mixture of H 2 gas and other gases. In an example, the neutral gas 104 may include H 2 gas and argon (Ar) gas. For example, the density of the neutral gas 104 (hereinafter also referred to as H 2 gas 104) may be in the range of 1×10 20 to 1×10 25 m -3 .

依據本發明,陰極110可為LaB 6板片。在實例中,陰極110經接地且因此具有0 V之電位。此外,陽極108處於給定電位,例如,ϕ a在1 V至1000 V之範圍內。LaB 6陰極110放置在填充有氫氣之氣室102中。在實例中,例如使用壓力計將氫氣之氣壓維持在約1托至100托。為此,氣室102內部之電流從陽極108流動至LaB 6陰極110。 According to the present invention, the cathode 110 can be a LaB 6 plate. In an example, the cathode 110 is grounded and therefore has a potential of 0 V. In addition, the anode 108 is at a given potential, for example, φ a is in the range of 1 V to 1000 V. The LaB 6 cathode 110 is placed in a gas chamber 102 filled with hydrogen. In an example, the gas pressure of the hydrogen is maintained at about 1 to 100 torr using a pressure gauge, for example. To this end, the current inside the gas chamber 102 flows from the anode 108 to the LaB 6 cathode 110.

此外,所施加電壓可加熱LaB 6陰極110且使中性氣體104電離。經加熱LaB 6陰極110可發射電子。隨後,可在帶電陰極或LaB 6陰極110與陽極108之間建立具有小直徑之導電通道112。在實例中,導電通道112之直徑可在0.01毫米至1毫米(mm)之範圍內。 In addition, the applied voltage can heat the LaB6 cathode 110 and ionize the neutral gas 104. The heated LaB6 cathode 110 can emit electrons. Subsequently, a conductive channel 112 with a small diameter can be established between the charged cathode or LaB6 cathode 110 and the anode 108. In an example, the diameter of the conductive channel 112 can be in the range of 0.01 mm to 1 mm.

根據實施例,在陰極110與陽極108之間建立用於個別質子及電子之導電通道112,該等個別質子及電子經組態以克服與氫氣104之碰撞,且由電位加速以導致p- 11B融合反應。 According to an embodiment, a conductive channel 112 is established between the cathode 110 and the anode 108 for individual protons and electrons, which are configured to overcome collisions with the hydrogen gas 104 and are accelerated by the electric potential to cause a p- 11B fusion reaction.

在一項實施例中,輸入電源供應器106跨陽極108及陰極110施加例如在1 V至1000 V之範圍內之電位。In one embodiment, the input power supply 106 applies a potential across the anode 108 and the cathode 110, for example, in the range of 1 V to 1000 V.

進一步繼續,跨氣室102之陰極110及陽極108外部施加之電位導致中性氣體104之電離。換言之,所施加電位導致形成完全或部分電離之氫氣104。在實例中,部分或完全電離之氫氣可包含電子及離子。例如,離子可包含帶正電荷之離子(諸如H +離子)或帶負電荷之離子(諸如H -離子)之至少一者。依據本發明,帶正電荷之H +離子對應於電漿之質子。例如,術語「H +離子」及質子可互換地使用。在特定情況中,當中性氣體104係由氫氣及氬氣組成時,完全或部分電離之電漿亦可包含其他類型之帶正電荷之離子,諸如Ar +離子。特定言之,在中性氣體104之電離期間,在氣室102中產生複數個質子及其他正離子(Ar +離子) (統稱為正電荷)以及電子及負離子(H -離子) (統稱為負電荷)。 Continuing further, an externally applied potential across the cathode 110 and the anode 108 of the gas chamber 102 causes ionization of the neutral gas 104. In other words, the applied potential causes the formation of fully or partially ionized hydrogen 104. In an example, the partially or fully ionized hydrogen may include electrons and ions. For example, the ions may include at least one of positively charged ions (such as H + ions) or negatively charged ions (such as H- ions). According to the present invention, the positively charged H + ions correspond to protons of the plasma. For example, the terms "H + ions" and protons may be used interchangeably. In certain cases, when the neutral gas 104 is composed of hydrogen and argon, the fully or partially ionized plasma may also contain other types of positively charged ions, such as Ar + ions. Specifically, during the ionization of the neutral gas 104, a plurality of protons and other positive ions (Ar + ions) (collectively referred to as positive charges) as well as electrons and negative ions (H - ions) (collectively referred to as negative charges) are generated in the gas chamber 102.

電位加熱陰極110,且導致由陰極110發射一組熱離子發射電子。該組熱離子發射電子形成具有負電荷密度之電子層114。例如,可在陰極110之外表面附近(即,在與陰極110相距一定距離處之外部)形成電子層114。在實例中,該組熱離子發射電子在氣室102內之陰極110附近局部形成負電荷密度之電子層114。The potential heats the cathode 110 and causes a set of thermal ion emission electrons to be emitted from the cathode 110. The set of thermal ion emission electrons forms an electron layer 114 having a negative charge density. For example, the electron layer 114 may be formed near the outer surface of the cathode 110 (i.e., outside at a certain distance from the cathode 110). In an example, the set of thermal ion emission electrons locally forms an electron layer 114 of negative charge density near the cathode 110 in the gas chamber 102.

在一項實施例中,電子層114連同跨氣室102施加之電位導致形成具有谷值之大靜電位。例如,峰值及谷值下之靜電位可在1 kV至100 kV之範圍內。在此方面,初始電位谷值(下文中被稱為第一電位谷值)係由電子層114之存在形成,其中電子層114係歸因於由經加熱陰極110熱離子地發射之該組電子而形成。In one embodiment, the electron layer 114, together with the potential applied across the gas chamber 102, results in a large electrostatic potential with valley values. For example, the electrostatic potential at the peak and valley values may be in the range of 1 kV to 100 kV. In this regard, the initial potential valley (hereinafter referred to as the first potential valley) is formed by the presence of the electron layer 114, wherein the electron layer 114 is formed due to the group of electrons thermally emitted by the heated cathode 110.

為此,歸因於第一電位谷值,正電荷及負電荷可以不同速度加速,從而導致電子-離子雙流不穩定性。特定言之,負電荷以第一速度加速遠離電子層114,且正電荷以第二速度加速朝向電子層114。在電子層114與陽極108之間之區域中,發生電子-離子雙流不穩定性。此外,依據本發明,來自電離中性氣體104之特定量之正電荷及負電荷由歸因於電子層114而形成之電場加速。例如,可在與第一電位谷值相關聯之區域與陰極110之間形成電場。在實例中,來自電離中性氣體104之一定量之負電荷或電子可由與第一電位谷值相關聯之區域與陰極110之間之電場加速,使得負電荷加速朝向陰極110。可注意,與第一電位谷值相關聯之區域或電子層114之區域位於陽極108與陰極110之間。正電荷及負電荷在不同方向上且以不同速度之此加速可導致電子-離子雙流不穩定性及具有複數個谷值及複數個峰值之靜電位分佈。To this end, due to the first potential valley, positive charges and negative charges may be accelerated at different speeds, thereby causing electron-ion double current instabilities. Specifically, negative charges are accelerated away from the electron layer 114 at a first speed, and positive charges are accelerated toward the electron layer 114 at a second speed. In the region between the electron layer 114 and the anode 108, electron-ion double current instabilities occur. In addition, according to the present invention, a specific amount of positive and negative charges from the ionized neutral gas 104 is accelerated by an electric field formed due to the electron layer 114. For example, an electric field may be formed between the region associated with the first potential valley and the cathode 110. In an example, a certain amount of negative charges or electrons from the ionized neutral gas 104 can be accelerated by the electric field between the region associated with the first potential valley and the cathode 110, so that the negative charges are accelerated toward the cathode 110. It can be noted that the region associated with the first potential valley or the region of the electronic layer 114 is located between the anode 108 and the cathode 110. This acceleration of positive and negative charges in different directions and at different speeds can lead to electron-ion double current instabilities and a static potential distribution with multiple valleys and multiple peaks.

以此方式,電離中性氣體104 (特定言之,電離中性氣體104之負電荷)可由第一電位谷值及電子層114之電位加速以轟擊陰極110以發射另外複數個電子(下文中被稱為一組二次電子)。該組二次電子可進一步增強電子層114之強度。例如,該組二次電子可增加電子層114之負電荷密度。在實施例中,該組二次發射電子導致在陰極110附近形成增強電子層114,該增強電子層114導致在導電通道112內形成靜電位分佈。In this way, the ionized neutral gas 104 (specifically, the negative charge of the ionized neutral gas 104) can be accelerated by the first potential valley and the potential of the electron layer 114 to hit the cathode 110 to emit another plurality of electrons (hereinafter referred to as a group of secondary electrons). The group of secondary electrons can further enhance the strength of the electron layer 114. For example, the group of secondary electrons can increase the negative charge density of the electron layer 114. In an embodiment, the group of secondary emission electrons causes the formation of an enhanced electron layer 114 near the cathode 110, and the enhanced electron layer 114 causes the formation of a static potential distribution in the conductive channel 112.

為此,歸因於電子-離子雙流不穩定性,在導電通道112內形成具有複數個谷值及複數個峰值之靜電位分佈。Therefore, due to the instability of the electron-ion double current, a static potential distribution having a plurality of valley values and a plurality of peak values is formed in the conductive channel 112.

在實例中,來自電離中性氣體104之個別電子以及正及負離子(下文中統稱為離子)可克服來自電離中性氣體104之電子及離子與緻密非電離氫氣104之分子之間之碰撞。來自電離中性氣體104之電子及離子可在導電通道112內由電位加速至高速度。在實例中,歸因於電子層114,質子及電子由氣室102中之電位加速以進行p- 11B融合,其中在氣室104中具有相對緻密氫氣密度。例如,電離中性氣體104之質子可轟擊至陰極110中。加速質子轟擊至陰極110中使能夠執行經控制之融合反應且產生能量。特定言之,質子可轟擊至LaB 6陰極110中,其中陰極110提供硼作為融合反應之燃料。以此方式,執行p– 11B融合反應。在實例中,轟擊至陰極110上之各帶電粒子(諸如質子或H +離子)之動能係在1 keV至100 keV之範圍內。 In an example, individual electrons and positive and negative ions (hereinafter collectively referred to as ions) from the ionized neutral gas 104 can overcome collisions between the electrons and ions from the ionized neutral gas 104 and molecules of the dense non-ionized hydrogen gas 104. The electrons and ions from the ionized neutral gas 104 can be accelerated to high speeds by the potential within the conductive channel 112. In an example, due to the electron layer 114, protons and electrons are accelerated by the potential in the gas chamber 102 to perform p- 11B fusion, where there is a relatively dense hydrogen gas density in the gas chamber 104. For example, protons of the ionized neutral gas 104 can hit the cathode 110. Accelerating protons to impact the cathode 110 enables controlled fusion reactions to be performed and energy to be generated. Specifically, protons may impact the LaB 6 cathode 110, where the cathode 110 provides boron as fuel for the fusion reaction. In this way, a p- 11 B fusion reaction is performed. In an example, the kinetic energy of each charged particle (such as a proton or H + ion) impacting the cathode 110 is in the range of 1 keV to 100 keV.

圖2展示描繪根據本發明之一些實施例之用於執行經控制之融合反應之方法之步驟之流程圖200。在氣室(諸如氣室102)中之質子與硼之間執行經控制之融合反應。如上文描述,氣室102包含陽極108、陰極或LaB 6陰極110及分散在氣室102內之中性氣體104。在實例中,中性氣體104至少包括分子氫(H 2)氣體。此外,氣室102連接至輸入電源供應器106。例如,輸入電源供應器可將電位施加在氣室102上。陰極110經接地。 FIG. 2 shows a flow chart 200 depicting steps of a method for performing a controlled fusion reaction according to some embodiments of the present invention. A controlled fusion reaction is performed between protons and boron in a gas chamber, such as gas chamber 102. As described above, gas chamber 102 includes an anode 108, a cathode or LaB 6 cathode 110, and a neutral gas 104 dispersed within gas chamber 102. In an example, neutral gas 104 includes at least molecular hydrogen (H 2 ) gas. In addition, gas chamber 102 is connected to an input power supply 106. For example, the input power supply can apply a potential to gas chamber 102. Cathode 110 is grounded.

在202,跨填充有中性氫氣104之氣室102施加電位。為此,歸因於外部施加在氣室102上之電位之初始放電電流導致中性氫氣104之電離且加熱LaB 6陰極110。 At 202, a potential is applied across the gas chamber 102 filled with neutral hydrogen 104. To this end, an initial discharge current due to the potential externally applied to the gas chamber 102 causes ionization of the neutral hydrogen 104 and heats the LaB6 cathode 110.

在步驟204,中性氫氣104歸因於電位而部分電離以產生電子及離子。在實例中,部分電離之中性氣體104產生具有帶正電荷或正H +離子、帶負電荷或負H -離子及電子之電漿。根據其他實例,中性氫氣104之電離可形成包括H +離子、H -離子及電子(e -)之電漿。 In step 204, the neutral hydrogen gas 104 is partially ionized due to the potential to generate electrons and ions. In an example, the partially ionized neutral gas 104 generates a plasma having positively charged or positive H + ions, negatively charged or negative H - ions, and electrons. According to other examples, the ionization of the neutral hydrogen gas 104 can form a plasma including H + ions, H - ions, and electrons (e - ).

在206,歸因於中性氣體104之電離,形成導電通道112。在陽極108與陰極110之間形成導電通道112。At 206, a conductive path 112 is formed due to the ionization of the neutral gas 104. The conductive path 112 is formed between the anode 108 and the cathode 110.

在208,歸因於LaB 6陰極110之加熱,由LaB 6陰極110發射一組熱離子發射電子。特定言之,該組熱離子發射電子可從LaB 6陰極110之表面發射至在陰極110外部且與陰極110相距一定距離之區域中。在該組熱離子發射電子累積於其中之陰極110外部之區域內,可發生電子層114之形成。電子層114可在陰極110之表面外部局部具有負電荷密度。從陰極110之表面發射至該區域中之該組熱離子發射電子可在該區域內形成第一電位谷值。隨後,電子層114之區域亦可指示與第一電位谷值相關聯之區域。 At 208, a set of thermal ion emission electrons are emitted from the LaB6 cathode 110 due to the heating of the LaB6 cathode 110. Specifically, the set of thermal ion emission electrons may be emitted from the surface of the LaB6 cathode 110 to a region outside the cathode 110 and at a certain distance from the cathode 110. In the region outside the cathode 110 in which the set of thermal ion emission electrons are accumulated, the formation of an electron layer 114 may occur. The electron layer 114 may have a negative charge density locally outside the surface of the cathode 110. The set of thermal ion emission electrons emitted from the surface of the cathode 110 into the region may form a first potential valley in the region. Subsequently, the region of the electronic layer 114 may also indicate the region associated with the first potential valley.

在210,電子層114連同跨氣室102施加之電位導致來自電漿(電離中性氣體104)之電子及負離子(或負電荷)加速朝向陰極110。負電荷轟擊至陰極110中。At 210, the electron layer 114, along with the potential applied across the gas chamber 102, causes electrons and negative ions (or negative charges) from the plasma (ionized neutral gas 104) to accelerate toward the cathode 110. The negative charges impact into the cathode 110.

在212,第一電位谷值之區域與陰極110之間之第一電場(E 1)導致負電荷加速以轟擊LaB 6陰極110以發射一組二次電子。第一電場可從陰極110指向對應於第一電位谷值之電子層114之中心。此外,所發射之該組二次電子移動至電子層114區域中以增強電子層114之強度。 At 212, a first electric field ( E1 ) between the region of the first potential valley and the cathode 110 causes negative charges to accelerate to hit the LaB6 cathode 110 to emit a group of secondary electrons. The first electric field can be directed from the cathode 110 to the center of the electron layer 114 corresponding to the first potential valley. In addition, the emitted group of secondary electrons moves to the region of the electron layer 114 to enhance the strength of the electron layer 114.

在214,形成陽極108與電子層114之間的第二電場(E 2)。第二電場導致負電荷加速朝向陽極108及正電荷加速朝向電子層114。歸因於第二電場之正電荷及負電荷之此加速導致電子-離子雙流不穩定性。 At 214, a second electric field ( E2 ) is formed between the anode 108 and the electron layer 114. The second electric field causes negative charges to accelerate toward the anode 108 and positive charges to accelerate toward the electron layer 114. This acceleration of positive and negative charges due to the second electric field causes electron-ion dual current instabilities.

歸因於電子-離子雙流不穩定性,在氣室102中之導電通道112內形成具有複數個電位峰值及複數個電位谷值之靜電位分佈。為此,負電荷在複數個谷值之各者下加速朝向陰極110以導致陰極110發射該組二次電子且增強電子層114之負電荷密度之強度。Due to the electron-ion double current instability, a static potential distribution having a plurality of potential peaks and a plurality of potential valleys is formed in the conductive channel 112 in the gas chamber 102. For this reason, the negative charge is accelerated toward the cathode 110 at each of the plurality of valleys to cause the cathode 110 to emit the group of secondary electrons and enhance the intensity of the negative charge density of the electron layer 114.

在216,正電荷及負電荷加速以導致融合反應。特定言之,在靜電位分佈之複數個谷值下,負電荷(諸如電子及/或H -離子)加速朝向LaB 6陰極110。負電荷之此加速導致從LaB 6陰極110發射電子,從而導致電位谷值,此進一步導致氣室102內之電子-離子雙流不穩定性,如上文詳細描述。此外,在靜電位分佈之複數個峰值下,正電荷(特定言之,質子)加速朝向LaB 6陰極110。質子朝向LaB 6陰極110之此加速可導致質子以高速度及動能轟擊LaB 6陰極110,藉此導致質子與LaB 6陰極110之硼之間之融合反應。 At 216, positive and negative charges are accelerated to cause a fusion reaction. Specifically, at multiple valleys of the electrostatic potential distribution, negative charges (such as electrons and/or H - ions) are accelerated toward the LaB6 cathode 110. This acceleration of the negative charges causes electrons to be emitted from the LaB6 cathode 110, thereby causing potential valleys, which further cause electron-ion dual current instabilities within the gas cell 102, as described in detail above. In addition, at multiple peaks of the electrostatic potential distribution, positive charges (specifically, protons) are accelerated toward the LaB6 cathode 110. This acceleration of the protons toward the LaB 6 cathode 110 may cause the protons to strike the LaB 6 cathode 110 with high velocity and kinetic energy, thereby causing a fusion reaction between the protons and the boron of the LaB 6 cathode 110 .

在218,自融合反應產生功率。在實例中,可從質子之加速獲得1 keV至100 keV之範圍內之能量。此外,可針對由質子及硼原子之融合形成之各 4He離子產生約3 MeV之平均能量。此外,質子在LaB 6陰極110上之轟擊可產生更多組二次電子以增強電子層114及相關聯電位谷值。 At 218, power is generated from the fusion reaction. In an example, energies in the range of 1 keV to 100 keV can be obtained from the acceleration of protons. In addition, an average energy of about 3 MeV can be generated for each 4 He ion formed by the fusion of protons and boron atoms. In addition, the impact of the protons on the LaB 6 cathode 110 can generate more sets of secondary electrons to enhance the electron layer 114 and the associated potential valley.

圖3繪示描繪根據一些實施例之第一電位谷值下之電子流之圖表300。圖表300在水平軸302表示x 0,其中x 0表示氣室102內之陰極110與陽極108之間之長度。此外,圖表300在垂直軸304表示φ,其中φ表示跨氣室102之電位。如展示,在谷值306下,電位係實質上低的,由φ dip指示。此外,谷值306經形成朝向氣室102之左手側,其中陰極110定位在氣室102之左手側。為此,例如,歸因於由於電子之熱離子發射而形成電子層114,在陰極110附近形成谷值306。 FIG. 3 shows a graph 300 depicting electron flow at a first potential valley according to some embodiments. Graph 300 represents x0 on a horizontal axis 302, where x0 represents the length between cathode 110 and anode 108 within gas cell 102. In addition, graph 300 represents φ on a vertical axis 304, where φ represents the potential across gas cell 102. As shown, at valley 306, the potential is substantially low, indicated by φ dip . In addition, valley 306 is formed toward the left hand side of gas cell 102, where cathode 110 is positioned at the left hand side of gas cell 102. To this end, valley 306 is formed near cathode 110, for example, due to the formation of electron layer 114 due to thermal ion emission of electrons.

如上文描述,外部施加之電位ϕ a導致形成部分電離之氫氣。當LaB 6陰極110被加熱時,從LaB 6陰極110之表面發射該組熱離子發射電子以形成具有負電荷密度之電子層114。歸因於電位谷值306,諸如第一電位谷值φ dip,浄負電荷密度導致LaB 6陰極110之表面附近之大靜電位井。 As described above, the externally applied potential φ a causes the formation of partially ionized hydrogen. When the LaB 6 cathode 110 is heated, the set of thermal ion emission electrons are emitted from the surface of the LaB 6 cathode 110 to form an electron layer 114 having a negative charge density. Due to the potential valley 306, such as the first potential valley φ dip , the net negative charge density causes a large static potential well near the surface of the LaB 6 cathode 110.

此外,在陰極110附近形成第一電場(E 1) 308。例如,E 1308從陰極110指向電子層114之中心。E 1308可使電子及/或帶負電荷之離子(即,來自電離中性氣體104或電漿之負電荷)加速以轟擊LaB 6陰極110。此可導致LaB 6陰極110發射一組二次電子。該組二次電子可增強電子層114之強度,從而形成正回饋迴路。例如,該組二次電子可增強電位谷值306 φ dip之強度。如圖3中展示,第一電場E 1308導致負電荷加速朝向與第一電位谷值(φ dip)相關聯之區域以轟擊陰極110。 In addition, a first electric field ( E1 ) 308 is formed near the cathode 110. For example, E1 308 is directed from the cathode 110 toward the center of the electron layer 114. E1 308 can accelerate electrons and/or negatively charged ions (i.e., negative charges from the ionized neutral gas 104 or plasma) to strike the LaB6 cathode 110. This can cause the LaB6 cathode 110 to emit a set of secondary electrons. The set of secondary electrons can enhance the strength of the electron layer 114, thereby forming a positive feedback loop. For example, the set of secondary electrons can enhance the strength of the potential valley 306 φ dip . As shown in FIG. 3 , the first electric field E 1 308 causes negative charges to accelerate toward a region associated with a first potential valley (φ dip ) to strike the cathode 110 .

此外,亦在氣室102內形成第二電場(E 2) 310。第二電場E 2310導致負電荷加速遠離與第一電位谷值相關聯之區域(即,朝向陽極108)且正電荷加速朝向與第一電位谷值相關聯之區域及朝向陰極110。 Additionally, a second electric field ( E2 ) 310 is also formed within the plenum 102. The second electric field E2 310 causes negative charges to accelerate away from the region associated with the first potential valley (i.e., toward the anode 108) and positive charges to accelerate toward the region associated with the first potential valley and toward the cathode 110.

在略遠離LaB 6陰極110及電子層114之區域中,電位φ增加朝向陽極108 (右手側)。歸因於具有不同流速(分別為V p及V e)且在相反方向上之正電荷及負電荷之加速,可在氣室102中發生電子-離子雙流不穩定性。此電子-離子雙流不穩定性激發強波,從而導致形成具有複數個電位谷值及複數個電位峰值之靜電位分佈。 In a region slightly away from the LaB6 cathode 110 and the electron layer 114, the potential φ increases toward the anode 108 (right hand side). Due to the acceleration of positive and negative charges with different flow rates ( Vp and Ve , respectively) and in opposite directions, electron-ion double current instability may occur in the gas chamber 102. This electron-ion double current instability excites strong waves, resulting in the formation of a static potential distribution with multiple potential valleys and multiple potential peaks.

如展示,在谷值306下,電位係實質上低,由φ dip指示。此外,谷值306經形成朝向氣室102之左手側,其中陰極110定位在氣室102之左手側。為此,例如,歸因於由於該組熱離子發射電子之熱離子發射而形成電子層114,在陰極110附近形成谷值306。 As shown, the potential is substantially low, indicated by φ dip , at valley 306. Furthermore, valley 306 is formed toward the left hand side of gas cell 102, where cathode 110 is positioned at the left hand side of gas cell 102. To this end, valley 306 is formed near cathode 110, for example, due to the formation of electron layer 114 due to thermal ion emission of the set of thermal ion emission electrons.

圖4繪示描繪根據一些實施例之靜電位分佈之圖表400。圖表400在水平軸402表示x 0,其中x 0表示氣室102內之陰極110與陽極108之間之距離。此外,圖表400在垂直軸404表示φ,其中φ表示跨氣室102之電位。 4 shows a graph 400 depicting a distribution of electrostatic potential according to some embodiments. Graph 400 represents x 0 on a horizontal axis 402, where x 0 represents the distance between cathode 110 and anode 108 within gas cell 102. In addition, graph 400 represents φ on a vertical axis 404, where φ represents the potential across gas cell 102.

靜電位分佈包含複數個谷值,描繪為谷值406A、406B及406C。靜電位分佈亦包含複數個峰值,描繪為峰值408A及408B。特定言之,靜電位分佈以谷值(諸如第一電位谷值)初始化。從峰值開始,正電荷可轟擊在LaB 6陰極110上以實行質子-硼(p- 11B)融合反應。 The electrostatic potential distribution includes a plurality of valleys, depicted as valleys 406A, 406B, and 406C. The electrostatic potential distribution also includes a plurality of peaks, depicted as peaks 408A and 408B. Specifically, the electrostatic potential distribution is initialized with a valley, such as a first potential valley. From the peak, positive charges can impact on the LaB 6 cathode 110 to perform a proton-boron (p- 11 B) fusion reaction.

特定言之,在複數個谷值406A、406B及406C之一些下,來自電離中性氣體104之負電荷加速朝向陰極110。負電荷加速朝向陰極110所依之谷值可導致陰極110發射該組二次電子。例如,歸因於在陰極110外部形成之電子層114,在陰極110附近形成谷值。Specifically, at some of the plurality of valleys 406A, 406B, and 406C, negative charges from the ionized neutral gas 104 are accelerated toward the cathode 110. The valleys upon which the negative charges are accelerated toward the cathode 110 may cause the cathode 110 to emit the set of secondary electrons. For example, the valleys are formed near the cathode 110 due to the electron layer 114 formed outside the cathode 110.

此外,在複數個峰值408A及408B之一些下,來自電離中性氣體104之正電荷加速朝向陰極110。正電荷加速朝向陰極110所依之峰值408導致正電荷轟擊至陰極110中。例如,加速質子及正離子(諸如Ar +離子) (即,正電荷)轟擊至陰極110中導致經控制之融合反應且從融合反應產生功率。 Additionally, at some of the plurality of peaks 408A and 408B, positive charges from the ionized neutral gas 104 are accelerated toward the cathode 110. The peaks 408 upon which the positive charges are accelerated toward the cathode 110 cause the positive charges to impact into the cathode 110. For example, the accelerated protons and positive ions (such as Ar + ions) (i.e., positive charges) impacting into the cathode 110 cause a controlled fusion reaction and generate power from the fusion reaction.

為了確定質子-硼融合反應之輸出,可判定在氣室102中執行之融合反應之特定結果。此等結果可包含例如質子-硼融合截面、質子及電子在相對緻密中性氫氣中之傳輸及功率增益之估計。可理解,加速質子可導致質子-硼融合。為此,可基於p- 11B融合反應之模擬來執行p- 11B融合之輸出之計算。 To determine the output of the proton-boron fusion reaction, certain results of the fusion reaction performed in the gas chamber 102 can be determined. Such results can include, for example, estimates of the proton-boron fusion cross section, the transport of protons and electrons in relatively dense neutral hydrogen, and power gain. It is understood that accelerating protons can lead to proton-boron fusion. To this end, calculations of the output of p- 11B fusion can be performed based on simulations of p- 11B fusion reactions.

在實例中,融合截面係依據質子-硼(p-11B)融合反應之質心能量(E cm)而變化。特定言之,質心能量之效應在低能區域中尤為顯著。例如,當質心能量從約1 keV變化至約40 keV時,融合截面增加約50個數量級。 In practice, the fusion cross section varies depending on the center-of-mass energy (E cm ) of the proton-boron (p-11B) fusion reaction. Specifically, the effect of the center-of-mass energy is particularly significant in the low-energy region. For example, when the center-of-mass energy changes from about 1 keV to about 40 keV, the fusion cross section increases by about 50 orders of magnitude.

電子層114之形成導致強電場,此使質子加速。在加速期間,發生質子-中性粒子碰撞,即,質子與中性氫氣104之原子碰撞。為此,當質子到達LaB 6陰極110靶時,質子之一小部分無法加速至峰值能量。此外,固體硼化合物亦被用作p- 11B融合程序之反應物。在此方面,基於質子-中性粒子碰撞效應,識別用於獲得到達LaB 6陰極靶110之質子之能量分佈之加速及碰撞程序。 The formation of the electron layer 114 results in a strong electric field, which accelerates the protons. During the acceleration, proton-neutral particle collisions occur, that is, the protons collide with atoms of neutral hydrogen 104. For this reason, when the protons reach the LaB 6 cathode 110 target, a small portion of the protons cannot be accelerated to the peak energy. In addition, solid boron compounds are also used as reactants in the p- 11 B fusion process. In this regard, based on the proton-neutral particle collision effect, the acceleration and collision process used to obtain the energy distribution of the protons reaching the LaB 6 cathode target 110 is identified.

進行一系列計算。在計算中,電位差被假定為50 kV,且加速路徑之長度被假定為1 mm或10 mm。高密度中性氣體(分子氫)均勻地填充在空間中。藉由Geant4 (幾何及追蹤軟體)模擬質子在強電場下傳輸通過高密度分子氫,該Geant4係用於模擬粒子傳輸通過物質之蒙地卡羅(Monte Carlo)工具包。可理解,具有初始能量ϵ in之質子被注入至氫氣中且經歷加速及碰撞,且當其到達另一側時,記錄其之最終能量ϵ f。以下圖7詳細描述質子傳輸通過高密度分子氫之模擬結果。在圖7中模擬質子傳輸之方式僅係例示性的且不應被解釋為限制。在本發明之其他實施例中,可在不同條件下模擬質子傳輸,例如,具有不同值之電位差、加速路徑之長度等。 A series of calculations are performed. In the calculations, the potential difference is assumed to be 50 kV, and the length of the acceleration path is assumed to be 1 mm or 10 mm. High-density neutral gas (molecular hydrogen) is uniformly filled in the space. The transport of protons through high-density molecular hydrogen under a strong electric field is simulated by Geant4 (geometry and tracking software), which is a Monte Carlo toolkit for simulating particle transport through matter. It can be understood that a proton with an initial energy ϵ in is injected into the hydrogen gas and undergoes acceleration and collision, and when it reaches the other side, its final energy ϵ f is recorded. The following Figure 7 describes in detail the simulation results of proton transport through high-density molecular hydrogen. The manner of simulating proton transport in FIG7 is merely exemplary and should not be construed as limiting. In other embodiments of the present invention, proton transport may be simulated under different conditions, for example, with different values of potential difference, length of acceleration path, etc.

圖5A至圖5F繪示根據本發明之一些實施例之在計算中行進通過加速路徑之後碰撞至陰極110靶上之質子之能量分佈之實例圖形表示。圖5A、圖5B、圖5C、圖5D、圖5E及圖5F之圖表500A、500B、500C、500D、500E及500F分別在水平軸表示對應最終能量ϵ f,其中ϵ f表示在計算中加速質子在其等於行進通過加速路徑之後碰撞至陰極110靶上時之最終能量。此外,圖表500A、500B、500C、500D、500E及500F在垂直軸表示計數,其中計數表示在計算中行進通過加速路徑之後碰撞至靶上之質子之數目。 5A to 5F show example graphical representations of energy distributions of protons that collide with the cathode 110 target after traveling through the acceleration path in calculations according to some embodiments of the present invention. Graphs 500A, 500B, 500C, 500D, 500E, and 500F of FIG. 5A, FIG. 5B, FIG. 5C, FIG. 5D, FIG. 5E, and FIG. 5F represent the corresponding final energy ϵ f on the horizontal axis, respectively, where ϵ f represents the final energy of the accelerated proton in the calculation when it is equal to the final energy of the proton that collided with the cathode 110 target after traveling through the acceleration path. Additionally, graphs 500A, 500B, 500C, 500D, 500E, and 500F represent counts on the vertical axis, where the counts represent the number of protons that collided with the target after traveling through the acceleration path in the calculation.

為此,在圖5A至圖5F中展示針對不同入射能量ϵ in=0.01 keV、0.1 keV及1 keV且加速路徑長度為1 mm及10 mm之出射質子之能量分佈。在計算中,中性氫氣之密度被假定為3.3×10 23m -3,且溫度被假定為在1000 K至5000 K之範圍內。判定加速質子之最終能量〈ϵ f〉及標準偏差S〈ϵ f〉。從圖5A至圖5F可得出結論,來自沿著加速路徑之碰撞之能量損耗係微不足道的。 To this end, the energy distribution of the outgoing protons for different incident energies ϵ in = 0.01 keV, 0.1 keV and 1 keV and acceleration path lengths of 1 mm and 10 mm is shown in Figures 5A to 5F. In the calculations, the density of the neutral hydrogen gas was assumed to be 3.3×10 23 m -3 and the temperature was assumed to be in the range of 1000 K to 5000 K. The final energy 〈ϵ f 〉 and the standard deviation S〈ϵ f 〉 of the accelerated protons were determined. From Figures 5A to 5F, it can be concluded that the energy loss from collisions along the acceleration path is negligible.

沿著x軸研究多流體模擬以研究在氣室102中之導電通道112中形成靜電位分佈。靜電位分佈具有複數個電位峰值及複數個電位谷值。為此,來自電漿之質子或H +離子在複數個峰值下加速通過導電通道112以導致p- 11B融合反應。 Multi-fluid simulation is studied along the x-axis to study the formation of electrostatic potential distribution in the conductive channel 112 in the gas chamber 102. The electrostatic potential distribution has a plurality of potential peaks and a plurality of potential valleys. Therefore, protons or H + ions from plasma are accelerated through the conductive channel 112 at the plurality of peaks to cause p- 11 B fusion reaction.

在實例中,系統長度x 0或對應於氣室102內之導電通道112之長度可在1 mm至10 mm之範圍內。依據本實例,系統長度x 0藉由x 0=2 mm給出。初始電漿溫度(T)被假定為約4000 K。由於氣室102內之電離比非常小,故中性氣體密度n n在模擬中被假定為恆定的。 In an example, the system length x0 or the length of the conductive channel 112 corresponding to the gas chamber 102 can be in the range of 1 mm to 10 mm. According to this example, the system length x0 is given by x0 = 2 mm. The initial plasma temperature (T) is assumed to be about 4000 K. Since the ionization ratio in the gas chamber 102 is very small, the neutral gas density n n is assumed to be constant in the simulation.

由於中性流體主要受碰撞效應之影響,故質子-中性粒子碰撞頻率v pn係約10 9赫茲(Hz)。此外,質子與中性粒子質量密度比係4×10 -4。在實例中,當電漿與中性流體碰撞時,電漿可使中性流體電離。 Since neutral fluids are mainly affected by collision effects, the proton-neutral particle collision frequency v pn is about 10 9 Hz. In addition, the proton-neutral particle mass density ratio is 4×10 -4 . In an example, when plasma collides with a neutral fluid, the plasma can ionize the neutral fluid.

關係式m pn pv pn=m nn nv np給出中性粒子與質子碰撞頻率係v np= m pn pv pn/ m nn n。例如,中性粒子-質子碰撞頻率係約10 5Hz至10 6Hz。因此,在奈秒之時間標度內,中性流體可被假定為不動的。 The relationship m p n p v pn = m n n n v np gives the neutral-proton collision frequency as v np = m p n p v pn / m n n n . For example, the neutral-proton collision frequency is about 10 5 Hz to 10 6 Hz. Therefore, on the nanosecond time scale, the neutral fluid can be assumed to be motionless.

入射電子碰撞至LaB 6陰極110邊界中且歸因於有界邊界而被彈回。模擬系統中考量熱離子發射電子及二次電子。歸因於邊界電子密度之增加或由於該組二次電子之電子層114之增加強度,觀察到電子層114處之電位及電場之增加。電場導致進一步加熱及電離。因此,中性氣體104中之離子密度以及電離比增加。在模擬中,電漿溫度被假定為從例如4000 K增加至約5000 K。電漿密度亦隨著電漿溫度從例如10 -6n 0增加至約10 -4n 0。在氣室102中,可發生電子-離子雙流不穩定性。因此,在導電通道112內形成具有複數個峰值及複數個谷值之靜電位分佈。以此方式,可達成複數個電位峰值,其中電離中性氣體104或電漿之質子加速以轟擊至LaB 6陰極110上以導致融合反應。 The incident electron collides into the boundary of the LaB 6 cathode 110 and is bounced back due to the bounded boundary. Thermal ion emission electrons and secondary electrons are considered in the simulation system. Due to the increase in the boundary electron density or due to the increased strength of the electron layer 114 of the group of secondary electrons, an increase in the potential and electric field at the electron layer 114 is observed. The electric field causes further heating and ionization. Therefore, the ion density and the ionization ratio in the neutral gas 104 increase. In the simulation, the plasma temperature is assumed to increase from, for example, 4000 K to about 5000 K. The plasma density also increases with the plasma temperature from, for example, 10 -6 n 0 to about 10 -4 n 0 . In the gas chamber 102, electron-ion double current instability may occur. Therefore, a static potential distribution having a plurality of peaks and a plurality of valleys is formed in the conductive channel 112. In this way, a plurality of potential peaks may be achieved, wherein protons of the ionized neutral gas 104 or plasma are accelerated to bombard the LaB 6 cathode 110 to cause a fusion reaction.

圖6A至圖6C繪示根據本發明之一些實施例之對應於電位峰值及電位谷值之模擬結果。在圖600A、圖600B及圖600C中,在t=40.0奈秒(ns)、t=41.0 ns及t=42.3 ns展示模擬結果。6A to 6C show simulation results corresponding to potential peaks and potential valleys according to some embodiments of the present invention. In FIG. 600A, FIG. 600B and FIG. 600C, simulation results are shown at t=40.0 nanoseconds (ns), t=41.0 ns and t=42.3 ns.

在模擬中之操作期間,歸因於增強電子層,LaB 6陰極110外部之邊界電子密度或負電荷密度增加至約10 23m -3。邊界電子密度隨著時間之增加係歸因於來自LaB 6陰極110之連續電子發射,例如,歸因於熱離子發射電子及該組二次電子之發射。可注意,儘管本發明僅描述從LaB 6陰極110發射該組熱離子發射電子及該組二次電子,然而,此不應被解釋為限制。為此,LaB 6陰極110可連續發射電子。此外,形成該組熱離子發射電子之電子及形成該組二次電子之電子或從LaB 6陰極110發射之其他組電子並不相互排斥。在實例中,從LaB 6陰極110發射之特定電子可在複數個谷值下入射回至LaB 6陰極110,且LaB 6陰極110可進一步再發射電子。 During operation in the simulation, the boundary electron density or negative charge density outside the LaB 6 cathode 110 increases to about 10 23 m -3 due to the enhanced electron layer. The increase in boundary electron density over time is due to continuous electron emission from the LaB 6 cathode 110, for example, due to the emission of thermal ion emission electrons and the group of secondary electrons. It can be noted that although the present invention only describes the emission of the group of thermal ion emission electrons and the group of secondary electrons from the LaB 6 cathode 110, this should not be interpreted as a limitation. To this end, the LaB 6 cathode 110 can continuously emit electrons. In addition, the electrons forming the group of thermal ion emission electrons and the electrons forming the group of secondary electrons or other groups of electrons emitted from the LaB6 cathode 110 do not exclude each other. In an example, a specific electron emitted from the LaB6 cathode 110 may be incident back to the LaB6 cathode 110 at a plurality of valley values, and the LaB6 cathode 110 may further re-emit electrons.

在電子層114周圍,歸因於高密度電子層114而形成電位谷值。例如,歸因於電子層114之增強強度,負電荷密度係例如在10至100千伏(kV)之範圍內,此可由靜電位分佈指示。Around the electron layer 114, a potential valley is formed due to the high density electron layer 114. For example, due to the enhanced strength of the electron layer 114, the negative charge density is, for example, in the range of 10 to 100 kilovolts (kV), which can be indicated by the electrostatic potential distribution.

在實例中,來自自LaB 6陰極110之熱離子發射之該組熱離子發射電子及該組二次電子導致在陰極110附近(例如,在x≈0)形成電子層114。歸因於電子層114,電位ϕ從ϕ(x=0)急劇下降至ϕ dip<0。接著,電位ϕ緩慢增加朝向陽極108,例如,在陽極108處,ϕ(x=x 0)=ϕ aV。從陽極108朝向電子層114之區域中之電場可為負的(E x<0)。氣室102中之負電場可使電子以高速度U e≈2.4×10 7m/s加速朝向陽極108,而歸因於正電荷之大質量,正電荷以小速度加速朝向陰極110。正電荷及負電荷以不同速度在相反方向上加速,此導致電子-離子雙流不穩定性。 In an example, the set of thermal ion emission electrons and the set of secondary electrons from thermal ion emission of the LaB6 cathode 110 result in the formation of an electron layer 114 near the cathode 110 (e.g., at x≈0). Due to the electron layer 114, the potential φ drops sharply from φ(x=0) to φ dip <0. Then, the potential φ increases slowly toward the anode 108, for example, at the anode 108, φ(x=x 0 )=φ a V. The electric field in the region from the anode 108 toward the electron layer 114 may be negative (E x <0). The negative electric field in the gas chamber 102 can accelerate the electrons at a high speed Ue≈2.4 × 107 m/s toward the anode 108, while due to the large mass of the positive charges, the positive charges are accelerated at a low speed toward the cathode 110. The positive and negative charges are accelerated in opposite directions at different speeds, which leads to electron-ion dual current instability.

在靜電位分佈中,歸因於此不穩定性,形成波之大振幅。例如,該等波之振幅可為數十千伏。正電荷及負電荷之數目密度及速度分佈亦展示靜電波之此大振幅型樣。In the electrostatic potential distribution, due to this instability, waves with large amplitudes are formed. For example, the amplitude of these waves can be tens of kilovolts. The number density and velocity distribution of positive and negative charges also show this large amplitude pattern of electrostatic waves.

圖6A、圖6B及圖6C分別繪示標繪圖602A、602B及602C。標繪圖602A、602B及602C分別在不同時間(例如,在40.0 ns、41.0 ns及42.3 ns)展示電子密度(n e)及/或離子密度(n i)在系統長度x 0上之改變。此外,圖6A、圖6B及圖6C分別繪示標繪圖604A、604B及604C,其等分別在例如40.0 ns、41.0 ns及42.3 ns之時間繪示電子之流速(V e)在系統長度(x 0)上之改變。圖6A、圖6B及圖6C亦分別繪示標繪圖606A、606B及606C,其等分別在例如40.0 ns、41.0 ns及42.3 ns之時間繪示質子之流速(V i)在系統長度(x 0)上之改變。圖10A、圖10B及圖10C亦分別繪示標繪圖608A、608B及608C,其等分別在不同時間(例如,在40.0 ns、41.0 ns及42.3 ns)繪示電位(ϕ)在系統長度(x 0)上之改變。 6A, 6B, and 6C show plots 602A, 602B, and 602C, respectively. Plots 602A, 602B, and 602C show changes in electron density ( ne ) and/or ion density ( ni ) over a system length x0 at different times, for example, at 40.0 ns, 41.0 ns, and 42.3 ns, respectively. In addition, FIG. 6A, 6B, and 6C show plots 604A, 604B, and 604C, respectively, which show changes in electron flow rate ( Ve ) over a system length ( x0 ) at times, for example, 40.0 ns, 41.0 ns, and 42.3 ns, respectively. 6A, 6B and 6C also show plots 606A, 606B and 606C, respectively, which show the change of proton flux (V i ) over the system length (x 0 ) at times such as 40.0 ns, 41.0 ns and 42.3 ns, respectively. FIG10A, 10B and 10C also show plots 608A, 608B and 608C, respectively, which show the change of potential (ϕ) over the system length (x 0 ) at different times such as 40.0 ns, 41.0 ns and 42.3 ns, respectively.

從標繪圖608A、608B及608C,觀察到峰值下之電位達到約30 kV,而觀察到谷值下之電位達到約-10 kV。From plots 608A, 608B, and 608C, it is observed that the potential at the peak reaches about 30 kV, and the potential at the valley reaches about -10 kV.

負電位谷值之形成可使電子加速朝向LaB 6陰極110,且正電位峰值之形成可使質子加速朝向LaB 6陰極110。由質子轟擊LaB 6陰極110導致p– 11B融合。融合平均發射約3 MeV氦(He),此可透過碰撞進一步產生質子。此等質子轟擊LaB 6陰極110且產生更多氦,藉此確保融合反應之連續性,藉此形成正回饋迴路。 The formation of a negative potential valley can accelerate electrons toward the LaB 6 cathode 110, and the formation of a positive potential peak can accelerate protons toward the LaB 6 cathode 110. The bombardment of the LaB 6 cathode 110 by protons leads to p- 11 B fusion. The fusion emits about 3 MeV helium (He) on average, which can further produce protons through collisions. These protons bombard the LaB 6 cathode 110 and produce more helium, thereby ensuring the continuity of the fusion reaction, thereby forming a positive feedback loop.

圖7繪示描繪根據一些實例實施例之用於在氣室102中執行經控制之融合反應之方法之步驟之實例流程圖。FIG. 7 shows an example flow chart depicting steps of a method for performing a controlled fusion reaction in gas chamber 102 according to some example embodiments.

在702,將中性氣體104分佈在氣室102內。氣室102包括陽極108、陰極110及分散在氣室102內之中性氣體104。在實例中,陰極110包括富硼材料,諸如六硼化鑭(LaB 6)、六硼化鈰(CeB 6)、硼化鋰、純硼、氮化硼(BN)或其等之組合。陰極110為經控制之融合反應提供硼。在實例中,中性氣體104至少包括分子氫(H 2)氣體。例如,中性氣體104之密度係在1×10 20m -3至1×10 25m -3之範圍內。 At 702, a neutral gas 104 is distributed in the gas chamber 102. The gas chamber 102 includes an anode 108, a cathode 110, and the neutral gas 104 dispersed in the gas chamber 102. In an example, the cathode 110 includes a boron-rich material, such as lumen hexaboride (LaB 6 ), caesium hexaboride (CeB 6 ), lithium boride, pure boron, boron nitride (BN), or a combination thereof. The cathode 110 provides boron for a controlled fusion reaction. In an example, the neutral gas 104 includes at least molecular hydrogen (H 2 ) gas. For example, the density of the neutral gas 104 is in the range of 1×10 20 m -3 to 1×10 25 m -3 .

在704,將能量供應至氣室102。特定言之,將外部電位施加至氣室102中之陽極108及陰極110。外部電位起始加熱陰極110,且將中性氣體104電離為質子及電子。在實例中,歸因於外部電位之初始放電電流可加熱陰極110且使中性氣體104電離。在一些情況中,中性氣體104可被弱電離。在此情況中,中性氣體104可被電離為質子或正離子(H +離子)、電子及負離子(H -離子)。在實例中,藉由外部施加10 V至1000 V之範圍內之電壓來為氣室102通電。 At 704, energy is supplied to the gas cell 102. Specifically, an external potential is applied to the anode 108 and cathode 110 in the gas cell 102. The external potential initially heats the cathode 110 and ionizes the neutral gas 104 into protons and electrons. In an example, the initial discharge current due to the external potential may heat the cathode 110 and ionize the neutral gas 104. In some cases, the neutral gas 104 may be weakly ionized. In this case, the neutral gas 104 may be ionized into protons or positive ions (H + ions), electrons, and negative ions ( H- ions). In an example, the gas cell 102 is energized by externally applying a voltage in the range of 10 V to 1000 V.

在特定情況中,可將加熱源施加至氣室102以執行陰極110之加熱且將中性氣體104電離為質子及電子。例如,加熱源可為超導磁體源、永久磁體源、電磁體源、射頻(RF)源、微波源、電場源、電極源、雷射源、離子槍源或其等之組合。In certain cases, a heating source may be applied to the gas chamber 102 to perform heating of the cathode 110 and ionize the neutral gas 104 into protons and electrons. For example, the heating source may be a superconducting magnet source, a permanent magnet source, an electromagnetic source, a radio frequency (RF) source, a microwave source, an electric field source, an electrode source, a laser source, an ion gun source, or a combination thereof.

在706,在陽極108與陰極110之間形成導電通道112。歸因於中性氣體104之電離而形成導電通道112。在實例中,導電通道112之直徑係在0.01 mm至1 mm之範圍內。At 706, a conductive channel 112 is formed between the anode 108 and the cathode 110. The conductive channel 112 is formed due to the ionization of the neutral gas 104. In an example, the diameter of the conductive channel 112 is in the range of 0.01 mm to 1 mm.

在708,在陰極110之外表面外部形成電子層114。歸因於由經加熱陰極110發射一組熱離子發射電子而形成電子層114。在實例中,歸因於由經加熱陰極110發射之該組熱離子發射電子,電子層114導致形成第一電位谷值。例如,該組熱離子發射電子可從陰極110之表面發射至與第一電位谷值相關聯之區域中。隨後,在陰極110之表面外部局部形成具有負電荷密度之電子層114。At 708, an electron layer 114 is formed outside the outer surface of the cathode 110. The electron layer 114 is formed due to a set of thermal ion emission electrons emitted by the heated cathode 110. In an example, the electron layer 114 causes a first potential valley to be formed due to the set of thermal ion emission electrons emitted by the heated cathode 110. For example, the set of thermal ion emission electrons can be emitted from the surface of the cathode 110 to a region associated with the first potential valley. Subsequently, an electron layer 114 having a negative charge density is locally formed outside the surface of the cathode 110.

在710,歸因於與電子層114相關聯之電位,來自電離中性氣體104之電子加速朝向陰極110。加速朝向陰極110之電子可轟擊陰極110以導致經加熱陰極110發射一組二次電子。該組二次電子亦可沈積在陰極110外部,在電子層114內。因此,該組二次電子增強電子層114之強度。At 710, electrons from the ionized neutral gas 104 are accelerated toward the cathode 110 due to the potential associated with the electron layer 114. The electrons accelerated toward the cathode 110 may strike the cathode 110 to cause the heated cathode 110 to emit a set of secondary electrons. The set of secondary electrons may also be deposited outside the cathode 110, within the electron layer 114. Thus, the set of secondary electrons enhances the strength of the electron layer 114.

特定言之,電子在與第一電位谷值相關聯之區域與陰極110之間加速以轟擊陰極110。該區域位於陽極108與陰極110之間。加速電子在陰極110處之轟擊導致發射該組二次電子。此外,歸因於由陰極110發射之該組二次電子,電子層114在第一電位谷值下被強化。Specifically, electrons are accelerated between the region associated with the first potential valley and the cathode 110 to impact the cathode 110. The region is located between the anode 108 and the cathode 110. The impact of the accelerated electrons at the cathode 110 results in the emission of the group of secondary electrons. In addition, due to the group of secondary electrons emitted by the cathode 110, the electron layer 114 is enhanced at the first potential valley.

在實例中,歸因於電子層114之增強強度而形成氣室102之陰極110外部之第一電位谷值之區域。第一電位谷值之區域在電子層114之中心具有最小電位值。此外,第一電場從陰極110指向電子層114之中心,且第二電場從陽極108指向電子層114之中心。In an example, a region of a first potential valley outside the cathode 110 of the gas cell 102 is formed due to the enhanced strength of the electronic layer 114. The region of the first potential valley has a minimum potential value at the center of the electronic layer 114. In addition, a first electric field is directed from the cathode 110 to the center of the electronic layer 114, and a second electric field is directed from the anode 108 to the center of the electronic layer 114.

在712,歸因於電子-離子雙流不穩定性,在導電通道112內形成靜電位分佈。靜電位分佈可包括複數個谷值及複數個峰值。在實例中,靜電位分佈在導電通道112內之形成係與增強電子層114及強化第一電位谷值之形成相關聯。At 712, due to the electron-ion double current instability, an electrostatic potential distribution is formed in the conductive channel 112. The electrostatic potential distribution may include a plurality of valleys and a plurality of peaks. In an example, the formation of the electrostatic potential distribution in the conductive channel 112 is associated with the formation of the enhanced electron layer 114 and the strengthening of the first potential valley.

例如,歸因於電子層114之增強強度,負電荷或電子及正電荷或質子被加速。在實例中,負電荷可包含電子及負離子(例如,H -離子),且正電荷可包含質子(例如,H +離子)及正離子(例如,Ar +離子)。歸因於強化第一電位谷值,負電荷可從陰極110加速朝向陽極108,且正電荷從陽極108加速朝向陰極110。為此,正電荷及負電荷在相反方向上加速且具有速度差。正電荷與負電荷之間之速度差及正電荷與負電荷之相反流動方向可導致氣室102內之電子-離子雙流不穩定性。 For example, due to the enhanced strength of the electron layer 114, negative charges or electrons and positive charges or protons are accelerated. In an example, the negative charges may include electrons and negative ions (e.g., H - ions), and the positive charges may include protons (e.g., H + ions) and positive ions (e.g., Ar + ions). Due to the enhanced first potential valley, the negative charges may be accelerated from the cathode 110 toward the anode 108, and the positive charges may be accelerated from the anode 108 toward the cathode 110. To this end, the positive and negative charges are accelerated in opposite directions and have a speed difference. The speed difference between the positive and negative charges and the opposite flow directions of the positive and negative charges may cause electron-ion dual-current instabilities within the gas chamber 102.

在此方面,負電荷或電子在複數個谷值之各者下加速朝向陰極110以導致陰極110發射該組二次電子。此外,正電荷或質子在複數個峰值之各者下加速朝向陰極110以轟擊至陰極110中。加速質子及正離子(H +離子)轟擊至陰極110中實現經控制之融合反應且導致產生功率。在實例中,質子及正離子經加速以用高動能轟擊陰極110。例如,轟擊至陰極110中之各帶電粒子(質子或正離子)之動能係在1 keV至100 keV之範圍內。 In this regard, negative charges or electrons are accelerated toward the cathode 110 at each of a plurality of valleys to cause the cathode 110 to emit the set of secondary electrons. In addition, positive charges or protons are accelerated toward the cathode 110 at each of a plurality of peaks to impact into the cathode 110. Accelerating protons and positive ions (H + ions) to impact into the cathode 110 achieves a controlled fusion reaction and results in power generation. In an example, the protons and positive ions are accelerated to impact the cathode 110 with high kinetic energy. For example, the kinetic energy of each charged particle (proton or positive ion) impacting into the cathode 110 is in the range of 1 keV to 100 keV.

受益於前文描述及相關聯圖式中呈現之教示之熟習本發明所屬領域技術者將想到本文中闡述之本發明之許多修改及其他實施例。因此,應理解,本發明不限於所揭示之特定實施例且修改及其他實施例旨在被包含於隨附發明申請專利範圍之範疇內。此外,儘管前文描述及相關聯圖式在元件及/或功能之特定實例組合之內容脈絡中描述實例實施例,但應瞭解,可在不脫離隨附發明申請專利範圍之範疇之情況下由替代實施例提供元件及/或功能之不同組合。在此方面,例如,亦可考慮與上文明確描述不同之元件及/或功能之組合,如可在隨附發明申請專利範圍之一些中闡述。儘管本文中採用特定術語,但其等僅用於通用及描述性意義且並非出於限制目的。Those skilled in the art to which the present invention belongs who benefit from the teachings presented in the foregoing description and the associated drawings will think of many modifications and other embodiments of the present invention as described herein. Therefore, it should be understood that the present invention is not limited to the specific embodiments disclosed and modifications and other embodiments are intended to be included within the scope of the accompanying invention application. In addition, although the foregoing description and the associated drawings describe example embodiments in the context of a specific example combination of elements and/or functions, it should be understood that different combinations of elements and/or functions may be provided by alternative embodiments without departing from the scope of the accompanying invention application. In this regard, for example, combinations of elements and/or functions that are different from the above explicit descriptions may also be considered, as may be described in some of the accompanying invention application. Although specific terms are employed herein, they are used in a generic and descriptive sense only and not for purposes of limitation.

100:裝置 102:氣室 104:中性氣體 106:輸入電源供應器 108:陽極 110:陰極 112:導電通道 114:電子層 200:流程圖 202:步驟 204:步驟 206:步驟 208:步驟 210:步驟 212:步驟 214:步驟 216:步驟 218:步驟 300:圖表 302:水平軸 304:垂直軸 306:谷值 308:第一電場(E 1) 310:第二電場(E 2) 400:圖表 402:水平軸 404:垂直軸 406A:谷值 406B:谷值 406C:谷值 408A:峰值 408B:峰值 500A至500F:圖表 600A至600C:圖 602A至602C:標繪圖 604A至604C:標繪圖 606A至606C:標繪圖 608A至608C:標繪圖 702:步驟 704:步驟 706:步驟 708:步驟 710:步驟 712:步驟 100: device 102: gas chamber 104: neutral gas 106: input power supply 108: anode 110: cathode 112: conductive channel 114: electronic layer 200: flow chart 202: step 204: step 206: step 208: step 210: step 212: step 214: step 216: step 218: step 300: graph 302: horizontal axis 304: vertical axis 306: valley value 308: first electric field (E 1 ) 310: second electric field (E 2 ) 400: graph 402: horizontal axis 404: vertical axis 406A: valley 406B: valley 406C: valley 408A: peak 408B: peak 500A to 500F: graphs 600A to 600C: graphs 602A to 602C: plots 604A to 604C: plots 606A to 606C: plots 608A to 608C: plots 702: step 704: step 706: step 708: step 710: step 712: step

因此,在已概括地描述本發明之實例實施例之情況下,現將參考隨附圖式,其等不一定按比例繪製,且其中:Having therefore generally described example embodiments of the present invention, reference will now be made to the accompanying drawings, which are not necessarily drawn to scale, and in which:

圖1繪示根據實例實施例之用於促進融合反應之氣室之圖;FIG. 1 is a diagram showing a gas chamber for promoting fusion reactions according to an example embodiment;

圖2展示描繪根據實例實施例之用於執行經控制之融合反應之方法之步驟之流程圖;FIG. 2 shows a flow chart depicting the steps of a method for performing a controlled fusion reaction according to an example embodiment;

圖3繪示描繪根據實例實施例之第一電位谷值下之電子流之圖表;FIG. 3 shows a graph depicting electron current at a first potential valley according to an example embodiment;

圖4繪示描繪根據實例實施例之靜電位分佈之圖表;FIG. 4 shows a graph depicting electrostatic potential distribution according to an example embodiment;

圖5A至圖5F繪示根據實例實施例之加速質子之能量分佈之實例圖形表示;5A-5F illustrate example graphical representations of energy distribution of accelerated protons according to example embodiments;

圖6A至圖6C繪示根據實例實施例之對應於電位峰值及電位谷值之模擬結果;及6A to 6C show simulation results corresponding to potential peaks and potential valleys according to an example embodiment; and

圖7繪示描繪根據實例實施例之用於在氣室中執行經控制之融合反應之方法之步驟之實例流程圖。7 shows an example flow chart depicting steps of a method for performing a controlled fusion reaction in a gas cell according to an example embodiment.

100:裝置 100:Device

102:氣室 102: Air chamber

104:中性氣體 104: Neutral gas

106:輸入電源供應器 106: Input power supply

108:陽極 108: Yang pole

110:陰極 110: cathode

112:導電通道 112: Conductive channel

114:電子層 114: Electronic layer

Claims (20)

一種執行經控制之融合反應之方法,該方法包括: 在氣室內提供中性氣體,該氣室包括陽極及陰極以及分散在該氣室內之中性氣體; 將能量供應至該氣室,其中該能量之該供應至少起始:加熱該陰極,及將該中性氣體電離為質子及電子; 歸因於該電離中性氣體而導致形成導電通道; 基於由該經加熱陰極熱離子地發射之一組電子而導致在該陰極之外表面外部形成電子層; 歸因於與該電子層相關聯之電位而導致來自該電離中性氣體之該等電子加速朝向該陰極以導致該經加熱陰極發射一組二次電子,其中所發射之該組二次電子增強該電子層之強度;及 歸因於電子-離子雙流不穩定性而導致在該導電通道內形成靜電位分佈,該靜電位分佈包括複數個谷值及複數個峰值,其中來自該電離中性氣體之該等質子在該複數個電位峰值下加速朝向該陰極,且該等加速質子轟擊至該陰極中實現該經控制之融合反應。 A method for performing a controlled fusion reaction, the method comprising: Providing a neutral gas in a gas chamber, the gas chamber comprising an anode and a cathode and the neutral gas dispersed in the gas chamber; Supplying energy to the gas chamber, wherein the supply of the energy at least initiates: heating the cathode, and ionizing the neutral gas into protons and electrons; Forming a conductive channel due to the ionized neutral gas; Forming an electron layer outside the outer surface of the cathode based on a group of electrons thermally emitted by the heated cathode; Due to the potential associated with the electron layer, the electrons from the ionized neutral gas are accelerated toward the cathode to cause the heated cathode to emit a group of secondary electrons, wherein the emitted group of secondary electrons enhance the strength of the electron layer; and Due to the electron-ion double current instability, a static potential distribution is formed in the conductive channel, the static potential distribution includes a plurality of valleys and a plurality of peaks, wherein the protons from the ionized neutral gas are accelerated toward the cathode under the plurality of potential peaks, and the accelerated protons impact the cathode to achieve the controlled fusion reaction. 如請求項1之方法,其中該方法包括: 導致初始放電電流加熱該陰極且使該中性氣體電離;及 歸因於由該經加熱陰極熱離子地發射之該組電子而導致形成該複數個電位谷值之第一電位谷值。 The method of claim 1, wherein the method comprises: causing an initial discharge current to heat the cathode and ionize the neutral gas; and causing a first potential valley of the plurality of potential valleys to be formed due to the group of electrons thermally emitted from the heated cathode. 如請求項2之方法,其中該方法包括: 導致該等電子在與該第一電位谷值相關聯之區域與該陰極之間加速以轟擊該陰極,其中該區域位於該陽極與該陰極之間; 歸因於該等加速電子在該陰極處之該轟擊而導致發射該組二次電子; 歸因於由該陰極發射之該組二次電子而導致在該複數個電位谷值之該第一電位谷值下強化該電子層;及 歸因於該強化電子層而導致在該導電通道內形成該靜電位分佈,具有該靜電位分佈之該導電通道與該增強電子層及該強化第一電位谷值之該形成相關聯。 The method of claim 2, wherein the method includes: causing the electrons to be accelerated between a region associated with the first potential valley and the cathode to impact the cathode, wherein the region is located between the anode and the cathode; causing the group of secondary electrons to be emitted due to the impact of the accelerated electrons at the cathode; causing the electron layer to be enhanced at the first potential valley of the plurality of potential valleys due to the group of secondary electrons emitted by the cathode; and causing the electrostatic potential distribution to be formed in the conductive channel due to the enhanced electron layer, the conductive channel having the electrostatic potential distribution being associated with the enhanced electron layer and the formation of the enhanced first potential valley. 如請求項3之方法,其中該方法進一步包括: 歸因於該陰極之該加熱而導致發射該組熱離子發射電子,該組熱離子發射電子從該陰極之該表面發射至與該第一電位谷值相關聯之該區域中;及 導致在該陰極之該表面外部局部形成具有負電荷密度之該電子層。 The method of claim 3, wherein the method further comprises: causing the group of thermal ion emission electrons to be emitted due to the heating of the cathode, the group of thermal ion emission electrons being emitted from the surface of the cathode to the region associated with the first potential valley; and causing the electron layer having a negative charge density to be locally formed outside the surface of the cathode. 如請求項1之方法,其中該方法包括: 將能量供應至該氣室以使該中性氣體部分電離以產生電漿,該電漿包括該等質子、該等電子、正離子及負離子,及 導致該等電子及該等負離子加速朝向該陰極以導致該經轟擊陰極發射該組二次電子。 The method of claim 1, wherein the method comprises: supplying energy to the gas chamber to partially ionize the neutral gas to produce plasma, the plasma comprising the protons, the electrons, positive ions and negative ions, and causing the electrons and the negative ions to accelerate toward the cathode to cause the struck cathode to emit the set of secondary electrons. 如請求項5之方法,其中該方法進一步包括: 歸因於該電子層之該增強強度而導致在該氣室之該陰極外部形成該第一電位谷值之區域,該第一電位谷值之該區域在該電子層之中心處具有最小電位值,其中第一電場從該陰極指向該電子層之該中心,且第二電場從該陽極指向該電子層之該中心。 The method of claim 5, wherein the method further comprises: Due to the enhanced strength of the electronic layer, a region of the first potential valley is formed outside the cathode of the gas chamber, the region of the first potential valley has a minimum potential value at the center of the electronic layer, wherein a first electric field is directed from the cathode to the center of the electronic layer, and a second electric field is directed from the anode to the center of the electronic layer. 如請求項5之方法,其中該方法進一步包括: 導致負電荷及正電荷加速,該等負電荷包括該等電子及該等負離子,且該等正電荷包括該等質子及該等正離子,其中該等負電荷從該陰極加速朝向該陽極,且該等正電荷從該陽極加速朝向該陰極,其中該等正電荷及該等負電荷在相反方向上加速,且具有速度差;及 歸因於該等正電荷與該等負電荷之間之該速度差而導致該氣室內之該電子-離子雙流不穩定性。 The method of claim 5, wherein the method further comprises: causing negative charges and positive charges to accelerate, the negative charges including the electrons and the negative ions, and the positive charges including the protons and the positive ions, wherein the negative charges are accelerated from the cathode toward the anode, and the positive charges are accelerated from the anode toward the cathode, wherein the positive charges and the negative charges are accelerated in opposite directions with a speed difference; and causing the electron-ion dual current instability in the gas chamber due to the speed difference between the positive charges and the negative charges. 如請求項7之方法,其中該方法進一步包括: 在該複數個谷值之各者下導致該等負電荷加速朝向該陰極以導致該陰極發射該組二次電子,及 在該複數個峰值之各者下導致該等正電荷加速朝向該陰極以轟擊至該陰極中,其中該等加速質子及該等正離子至該陰極中之該轟擊以動能發生。 The method of claim 7, wherein the method further comprises: causing the negative charges to accelerate toward the cathode at each of the plurality of valley values to cause the cathode to emit the group of secondary electrons, and causing the positive charges to accelerate toward the cathode at each of the plurality of peak values to impact into the cathode, wherein the impact of the accelerated protons and the positive ions into the cathode occurs with kinetic energy. 如請求項8之方法,其中轟擊至該陰極中之各帶電粒子之該動能係在1 keV至100 keV之範圍內。The method of claim 8, wherein the kinetic energy of each charged particle impacting the cathode is in the range of 1 keV to 100 keV. 如請求項1之方法,其中該方法進一步包括: 跨該氣室施加加熱源以至少執行:該陰極之該加熱;及將該中性氣體電離為該等質子及該等電子,其中 該加熱源包括以下之至少一者:超導磁體源、永久磁體源、電磁體源、射頻(RF)源、微波源、電場源、電極源、雷射源、離子槍源或其等之組合。 The method of claim 1, wherein the method further comprises: Applying a heating source across the gas chamber to perform at least: the heating of the cathode; and ionizing the neutral gas into the protons and the electrons, wherein The heating source comprises at least one of the following: a superconducting magnet source, a permanent magnet source, an electromagnetic source, a radio frequency (RF) source, a microwave source, an electric field source, an electrode source, a laser source, an ion gun source, or a combination thereof. 如請求項1之方法,其中該導電通道之直徑係在0.01毫米至1毫米之範圍內。The method of claim 1, wherein the diameter of the conductive channel is in the range of 0.01 mm to 1 mm. 如請求項1之方法,其中該中性氣體之密度係在1×10 20至1×10 25m -3之範圍內。 The method of claim 1, wherein the density of the neutral gas is in the range of 1×10 20 to 1×10 25 m -3 . 如請求項1之方法,其中該中性氣體至少包括氫(H 2)氣體。 The method of claim 1, wherein the neutral gas comprises at least hydrogen (H 2 ) gas. 如請求項1之方法,其中藉由外部施加10伏特至1000伏特之範圍內之電壓來為該氣室通電。A method as claimed in claim 1, wherein the gas chamber is energized by externally applying a voltage in the range of 10 volts to 1000 volts. 如請求項1之方法,其中該陰極包括富硼材料,該富硼材料包括以下之至少一者:六硼化鑭(LaB 6)、六硼化鈰(CeB 6)、硼化鋰、純硼或氮化硼,且 其中該陰極為該經控制之融合反應提供硼。 The method of claim 1, wherein the cathode comprises a boron-rich material, the boron-rich material comprising at least one of: lumen hexaboride (LaB 6 ), cerium hexaboride (CeB 6 ), lithium boride, pure boron, or boron nitride, and wherein the cathode provides boron for the controlled fusion reaction. 一種用於執行經控制之融合反應之裝置,該裝置包括: 氣室,其包括圍封在該氣室內之陽極及陰極以及分佈在該氣室內之中性氣體;及 能量源,其經組態以將能量供應至該氣室,其中該能量之該供應導致: 至少起始:加熱該陰極;及將該中性氣體電離為質子及電子; 歸因於該電離中性氣體而形成導電通道; 基於由該經加熱陰極熱離子地發射之一組電子而在該陰極之外表面外部形成電子層; 歸因於與該電子層相關聯之電位而使來自該電離中性氣體之該等電子加速朝向該陰極以導致該經加熱陰極發射一組二次電子,其中該組二次電子增強該電子層之強度;及 歸因於電子-離子雙流不穩定性而在該導電通道內形成靜電位分佈,該靜電位分佈包括複數個谷值及複數個峰值,其中來自該電離中性氣體之該等質子在該複數個電位峰值下加速朝向該陰極,且該等加速質子轟擊至該陰極中實現該經控制之融合反應。 A device for performing a controlled fusion reaction, the device comprising: a gas chamber comprising an anode and a cathode enclosed within the gas chamber and a neutral gas distributed within the gas chamber; and an energy source configured to supply energy to the gas chamber, wherein the supply of the energy results in: at least initially: heating the cathode; and ionizing the neutral gas into protons and electrons; forming a conductive channel due to the ionized neutral gas; forming an electron layer outside the outer surface of the cathode based on a group of electrons thermally emitted by the heated cathode; The electrons from the ionized neutral gas are accelerated toward the cathode due to the potential associated with the electron layer to cause the heated cathode to emit a group of secondary electrons, wherein the group of secondary electrons enhance the strength of the electron layer; and Due to the electron-ion double current instability, a static potential distribution is formed in the conductive channel, the static potential distribution includes a plurality of valleys and a plurality of peaks, wherein the protons from the ionized neutral gas are accelerated toward the cathode under the plurality of potential peaks, and the accelerated protons impact the cathode to achieve the controlled fusion reaction. 如請求項16之裝置,其中該能量之該供應進一步導致: 歸因於初始放電電流而加熱該陰極且使該中性氣體電離;及 歸因於由該經加熱陰極熱離子地發射之該組電子而形成該複數個電位谷值之第一電位谷值。 The device of claim 16, wherein the supply of the energy further causes: heating the cathode and ionizing the neutral gas due to the initial discharge current; and forming a first potential valley of the plurality of potential valleys due to the group of electrons thermally emitted from the heated cathode. 如請求項17之裝置,其中該能量之該供應進一步導致: 使該等電子在與該第一電位谷值相關聯之區域與該陰極之間加速以轟擊該陰極,其中該區域位於該陽極與該陰極之間; 歸因於該等加速電子在該陰極處之該轟擊而由該陰極發射該組二次電子; 歸因於由該陰極發射之該組二次電子而在該複數個電位谷值之該第一電位谷值下強化該電子層;及 歸因於該強化電子層而在該導電通道內形成該靜電位分佈,具有該靜電位分佈之該導電通道與該增強電子層及該強化第一電位谷值之該形成相關聯。 The device of claim 17, wherein the supply of the energy further results in: Accelerating the electrons between the region associated with the first potential valley and the cathode to impact the cathode, wherein the region is located between the anode and the cathode; Emitting the group of secondary electrons from the cathode due to the impact of the accelerated electrons at the cathode; Strengthening the electron layer at the first potential valley of the plurality of potential valleys due to the group of secondary electrons emitted by the cathode; and Forming the electrostatic potential distribution in the conductive channel due to the strengthened electron layer, the conductive channel having the electrostatic potential distribution being associated with the strengthened electron layer and the formation of the strengthened first potential valley. 如請求項16之裝置,其中該能量之該供應進一步導致: 使該中性氣體部分電離以產生電漿,該電漿包括該等質子、該等電子、正離子及負離子; 使該等電子及該等負離子加速朝向該陰極以導致該經轟擊陰極發射該組二次電子以增強該電子層之該強度; 歸因於該電子層之該增強強度而在該氣室之該陰極外部形成該第一電位谷值之區域,該第一電位谷值之該區域在該電子層之中心處具有最小電位值,其中第一電場從該陰極指向該電子層之該中心,且第二電場從該陽極指向該電子層之該中心; 使負電荷及正電荷加速,該等負電荷包括該等電子及該等負離子,且該等正電荷包括該等質子及該等正離子,其中該等負電荷從該陰極加速朝向該陽極,且該等正電荷從該陽極加速朝向該陰極,其中該等正電荷及該等負電荷在相反方向上加速,且具有速度差;及 歸因於該等正電荷與該等負電荷之間之該速度差而在該氣室內形成該電子-離子雙流不穩定性。 The device of claim 16, wherein the supply of energy further results in: Partially ionizing the neutral gas to generate plasma, the plasma comprising the protons, the electrons, positive ions and negative ions; Accelerating the electrons and the negative ions toward the cathode to cause the struck cathode to emit the group of secondary electrons to enhance the strength of the electron layer; Forming a region of the first potential valley outside the cathode of the gas chamber due to the enhanced strength of the electron layer, the region of the first potential valley having a minimum potential value at the center of the electron layer, wherein a first electric field is directed from the cathode to the center of the electron layer, and a second electric field is directed from the anode to the center of the electron layer; Accelerating negative charges and positive charges, the negative charges including the electrons and the negative ions, and the positive charges including the protons and the positive ions, wherein the negative charges are accelerated from the cathode toward the anode, and the positive charges are accelerated from the anode toward the cathode, wherein the positive charges and the negative charges are accelerated in opposite directions with a speed difference; and forming the electron-ion dual current instability in the gas chamber due to the speed difference between the positive charges and the negative charges. 如請求項19之裝置,其中該能量之該供應進一步導致: 在該複數個谷值之各者下使該等負電荷加速朝向該陰極以導致該陰極發射該組二次電子;及 在該複數個峰值之各者下使該等正電荷加速朝向該陰極以轟擊至該陰極中,其中該等加速質子及該等正離子至該陰極中之該轟擊導致動能之產生。 The device of claim 19, wherein the supply of the energy further results in: accelerating the negative charges toward the cathode at each of the plurality of valleys to cause the cathode to emit the set of secondary electrons; and accelerating the positive charges toward the cathode at each of the plurality of peaks to impact into the cathode, wherein the impact of the accelerated protons and the positive ions into the cathode results in the generation of kinetic energy.
TW111138850A 2022-10-07 2022-10-13 Method and apparatus for controlled fusion reactions TW202416297A (en)

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