TW202413675A - Angle adjustment method, adjustable bracket and film processing device thereof - Google Patents

Abstract

The present invention discloses an angle adjustment method, an adjustable bracket and a thin film processing device thereof, wherein the adjustable bracket comprises: a circumferential adjustment member, which is arranged on the outer side of a vacuum reaction chamber of the thin film processing device, and the circumferential adjustment member comprises a circumferential slide groove; at least one fixed bracket, whose bottom is slidably connected to the circumferential slide groove, and the fixed bracket can rotate circumferentially along the circumferential slide groove; an inclination adjustment frame, whose two ends are connected to the fixed bracket, the inclination adjustment frame comprises a first position and a second position, and the fixed bracket comprises a third position, the distance between the first position and the third position is greater than the distance between the second position and the third position, and a temperature sensor is arranged on the inclination adjustment frame and the temperature sensor can move along the inclination adjustment frame. The advantages are: the adjustable bracket enables the vertical tilt angle and plane circumferential azimuth of the temperature sensor to be adjusted during measurement, thereby increasing the temperature measurement area range of the temperature sensor and improving the flexibility of the temperature sensor setting.

Description

Angle adjustment method, adjustable bracket and film processing device thereof

The invention relates to the field of semiconductor equipment, and in particular to an angle adjustment method, an adjustable bracket and a film processing device thereof.

At present, plasma etching, physical vapor deposition (PVD), chemical vapor deposition (CVD) and other processes are commonly used to micro-process semiconductor process parts or substrates, such as manufacturing flexible displays, flat panel displays, light-emitting diodes, solar cells, etc. Micro-processing manufacturing includes a variety of different processes and steps, among which chemical vapor deposition and atomic layer deposition processes are widely used. These thin film processing processes can deposit a variety of materials, including a wide range of insulating materials, most metal materials and metal alloy materials. The above processes are generally carried out in the high vacuum reaction chamber of the thin film processing equipment.

With the shrinking feature size of semiconductor devices and the increasing integration of devices, higher and higher requirements are placed on the uniformity of thin film processing on the wafer surface. Although the performance of thin film processing equipment has been greatly improved after many upgrades, there are still many deficiencies in the uniformity of thin film deposition. In particular, with the increasing size of wafers, the existing vapor deposition methods and equipment can hardly meet the uniformity requirements of thin film processing.

During the thin film processing, the film growth environment of the wafer is very harsh. Various process conditions will affect the uniformity of the thin film processing on the wafer surface, such as the heating temperature field of the wafer, the direction of the reaction gas flow, and the test accuracy of the reaction temperature, which directly determine the quality of the wafer thin film processing. However, in actual applications, the temperature measurement in the chamber is often accompanied by large temperature measurement errors or untimely temperature measurement. This may be due to factors such as the narrow measurement range of the temperature measuring device due to the limited space in the chamber, which makes the temperature measurement and control in the chamber often more complicated and difficult to control, which easily causes uneven heating temperature field in the reaction chamber. If the process environment of the reaction area in the reaction chamber is not completely consistent, it will cause the wafer surface film processing thickness, composition, physical properties and other undesirable phenomena, thereby reducing the yield rate of wafer production. Therefore, it is necessary to improve the existing film processing equipment to improve the uniformity of wafer film processing.

The purpose of the present invention is to provide an angle adjustment method, an adjustable bracket and a thin film processing device thereof. The adjustable bracket combines a circumferential adjustment member, a fixed bracket and an inclination adjustment bracket, etc., so that the vertical inclination angle and the plane circumferential angle of the temperature sensor during measurement can be adjusted, thereby increasing the temperature measurement area range of the temperature sensor. One temperature sensor can measure hundreds or even thousands of positions, thereby improving the flexibility of the temperature sensor setting. During the process, the temperature sensor can measure multiple positions for verification to further ensure the accuracy of the temperature measurement.

In order to achieve the above object, the present invention is implemented through the following technical solutions:

An adjustable bracket for a temperature measuring assembly of a film processing device, comprising: a circumferential adjustment member, which is arranged on the outer side of a vacuum reaction chamber of the film processing device, and the circumferential adjustment member comprises a circumferential slide groove; at least one fixed bracket, the bottom of the fixed bracket is slidably connected to the circumferential slide groove, and the fixed bracket can rotate circumferentially along the circumferential slide groove; an inclination adjustment frame, whose two ends are connected to the fixed bracket, the inclination adjustment frame comprises a first position and a second position, the fixed bracket comprises a third position, the distance between the first position and the third position is greater than the distance between the second position and the third position, and the inclination adjustment frame is provided with a temperature sensor and the temperature sensor can move along the inclination adjustment frame.

Optionally, the thin film processing device includes a component that is transparent to the detection medium of the temperature sensor, and the detection direction of the detection medium of the temperature sensor is perpendicular to the surface of the component that is transparent to the detection medium on its detection path.

Optionally, the tilt adjustment frame is an arc-shaped structural support.

Optionally, the arc-shaped structural support is a concave structure or a convex structure.

Optionally, the central angle range corresponding to the tilt adjustment frame is 60° to 100°.

Optionally, an arc-shaped guide is provided between the temperature sensor and the tilt adjustment frame to guide the temperature sensor to move on the tilt adjustment frame.

Optionally, the arc-shaped guide member includes arc-shaped T-shaped bosses and T-shaped grooves adapted thereto, and the T-shaped grooves are used to guide the T-shaped bosses to move therein; The T-shaped bosses are arranged on the temperature sensor, and the T-shaped grooves are arranged on the tilt adjustment frame, or, the T-shaped bosses are arranged on the tilt adjustment frame, and the T-shaped grooves are arranged on the temperature sensor.

Optionally, the temperature sensor is connected to the tilt adjustment frame via a connecting shaft, and the connecting shaft fixes the temperature sensor on the tilt adjustment frame via a mechanical fastening device.

Optionally, the temperature sensor is arranged on the tilt adjustment frame via a connecting shaft, and a contact area between the connecting shaft and the tilt adjustment frame includes an edge.

Optionally, it further comprises: A connector connected to the chamber of the film processing device; A retractable device, the bottom of which is connected to the top of the connector; An observation window structure, one end of which is connected to the retractable device and the other end of which is connected to a temperature sensor, the temperature sensor can rotate relative to the observation window structure, and the observation window structure comprises a transparent structure, and the transparent structure is always perpendicular to the forward direction of the detection medium emitted by the temperature sensor.

Optionally, the retractable device is a bellows structure.

Optionally, the connecting member is a flange structure.

Optionally, the connector is connected to the retractable device via a mechanical fastening device; The retractable device is connected to the observation window structure via a mechanical fastening device; The temperature sensor is connected to the observation window structure via a mechanical fastening device.

Optionally, a thin film processing device comprises, a vacuum reaction chamber; a plurality of heating devices disposed outside the vacuum reaction chamber to provide heat energy to the vacuum reaction chamber; a temperature measuring component comprising a temperature sensor and the adjustable bracket.

Optionally, at least a portion of the vacuum reaction chamber is made of a material that allows the temperature sensor to detect the medium.

Optionally, it also includes: An external cavity, which is arranged outside the vacuum reaction chamber.

Optionally, the circumferential adjustment member is disposed at the top of the outer cavity; The top wall of the outer cavity is provided with a detection hole, and the connecting member is connected to the detection hole.

Optionally, there is a vacuum environment between the outer cavity and the vacuum reaction chamber; The area enclosed by the connector, the retractable device and the observation window structure is a vacuum environment.

Optionally, the temperature sensor is an infrared thermometer.

Optionally, a method for adjusting the measuring angle of the temperature measuring assembly of the film processing device comprises: Adjusting the fixed bracket to rotate along the circumferential slide groove of the circumferential adjusting member; Adjusting the position of the temperature sensor on the tilt adjustment bracket to adjust the measuring angle of the temperature sensor.

Optionally, the detection direction of the detection medium of the temperature sensor is perpendicular to the top wall of the vacuum reaction chamber.

Compared with the prior art, the present invention has at least the following advantages:

In an angle adjustment method, an adjustable bracket and a film processing device thereof of the present invention, the adjustable bracket combines a circumferential adjustment member, a fixed bracket and an angle adjustment bracket, so that the vertical angle and the plane circumferential angle of the temperature sensor during measurement can be adjusted, thereby increasing the temperature measurement area range of the temperature sensor. One temperature sensor can measure hundreds or even thousands of positions, thereby improving the flexibility of the temperature sensor setting and temperature measurement; at the same time, the adjustable bracket can adjust the temperature sensor to perform multiple temperature measurements at the same position, thereby ensuring the repeatability of the temperature measurement at the temperature measurement position.

Furthermore, the adjustable bracket can make the detection direction of the detection medium of the temperature sensor perpendicular to the "transparent (permeable to the detection medium)" object on the detection path of the detection medium, reducing the influence of other components on the detection effect of the detection medium and improving the temperature measurement accuracy of the temperature sensor.

In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be described clearly and completely in combination with the drawings in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making progressive labor are within the scope of protection of the present invention.

It should be noted that, in this article, the terms "include", "comprising", "having" or any other variations thereof are intended to cover non-exclusive inclusion, so that a process, method, article or terminal device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or terminal device. In the absence of more restrictions, the elements defined by the phrase "include..." or "comprising..." do not exclude the existence of other elements in the process, method, article or terminal device including the elements.

It should be noted that the drawings are all in very simplified form and use non-precise ratios, and are only used to conveniently and clearly assist in explaining the embodiments of the present invention.

Embodiment 1

As shown in FIG. 1 , a thin film processing device (chemical vapor deposition device CVD) of the present invention is shown, and the device comprises a vacuum reaction chamber 110, and the vacuum reaction chamber 110 can be used to process one or more wafers W, including depositing materials on the upper surface of the wafer W. The vacuum reaction chamber 110 has a top wall 111 located at the top, a bottom wall 112 located at the bottom, and a side wall 113 extending between the top wall 111 and the bottom wall 112. The vacuum reaction chamber 110 comprises an inlet opening at one end and an exhaust opening (not shown in the figure) at the other end, and the process gas for deposition flows into the inner space of the vacuum reaction chamber 110 from the inlet opening, performs a chemical vapor deposition process in the reaction area above the wafer W, and is discharged from the chamber from the exhaust opening. The vacuum reaction chamber 110 is provided with a wafer support structure 120, the wafer support structure 120 includes a wafer carrier 121 and a support frame 122. The front of the wafer carrier 121 is used to support the wafer W for performing a chemical vapor deposition process. The support frame 122 is arranged below the wafer carrier 121 and is used to support the wafer carrier 121. Optionally, the support frame 122 is made of non-metallic materials to reduce the risk of contamination of the internal space of the chamber. Optionally, the top wall 111 and the bottom wall 112 are made of optically transparent or translucent materials that are transparent to heat energy (such as quartz materials that are transparent to specific infrared bands).

Furthermore, as shown in FIG1 , the device includes a plurality of heating devices 130 for providing heat energy to the vacuum reaction chamber 110, and each heating device 130 is disposed above the vacuum reaction chamber 110. Optionally, the heating device 130 is a high-intensity tungsten filament lamp having a transparent quartz shell and containing a halogen gas such as iodine. The full spectrum radiation heat energy generated by the high-intensity tungsten filament lamp will not be significantly absorbed by the top wall 111 made of a heat-transparent material, so as to ensure that the heat energy generated by each heating device 130 reaches the vacuum reaction chamber 110 to the maximum extent. During the process, the interior of the vacuum reaction chamber 110 of the chemical vapor deposition device reaches the required process temperature through each heating device 130, so that the process gas supplied to the vacuum reaction chamber 110 is thermally decomposed, thereby depositing a thin film material on the upper surface of the wafer W. Optionally, the deposited thin film material can be a III-group, IV-group and/or V-group material, or a material including a III-group, IV-group and/or V-group dopant. For example, the deposited thin film material can be one or more of gallium arsenide, gallium nitride or aluminum gallium nitride.

In order to further detect the temperature state at various locations in the vacuum reaction chamber 110, the thin film processing device of the present invention further includes a temperature measuring assembly 140, the temperature measuring assembly 140 includes a temperature sensor 144 and an adjustable bracket carrying the temperature sensor 144, the adjustable bracket is arranged outside the vacuum reaction chamber 110, and the adjustable bracket allows the plane circumferential azimuth and vertical inclination of the temperature sensor 144 to be adjusted during measurement, so that the temperature sensor 144 can be adjusted. The temperature sensor 144 performs all-round temperature measurement of each component in the vacuum reaction chamber 110, providing reliable data support for the control of process parameters during the process; at the same time, the adjustable bracket is arranged outside the vacuum reaction chamber 110, and the temperature sensor 144 adopts a non-contact method to measure the temperature, which will not occupy the limited space inside the vacuum reaction chamber 110 and will not be affected by the size of the space inside the vacuum reaction chamber 110 and the process environment.

Specifically, as shown in FIG. 1 and FIG. 2, FIG. 2 is a top view of the film processing device of FIG. 1, and the adjustable bracket for the temperature measuring assembly 140 includes: a circumferential adjusting member 141, at least one fixed bracket 142, and an angle adjusting bracket 143. The circumferential adjusting member 141 includes a circumferential slide groove, which is arranged above the vacuum reaction chamber 110. Optionally, the circumferential adjusting member 141 is fixed above the vacuum reaction chamber 110 through a bracket body. The bottom of the fixed bracket 142 is slidably connected to the circumferential slide groove, and the fixed bracket 142 can rotate circumferentially along the circumferential slide groove. The two ends of the tilt adjustment frame 143 are connected to the fixed bracket 142. The tilt adjustment frame 143 includes a first position 1431 and a second position 1432. The fixed bracket 142 includes a third position 1421. The vertical distance (H1) between the first position 1431 and the third position 1421 is greater than the vertical distance (H2) between the second position 1432 and the third position 1421. The tilt adjustment frame 143 is a non-planar structure. At least one temperature sensor 144 is arranged on the tilt adjustment frame 143 and the temperature sensor 144 can move along the tilt adjustment frame 143. The temperature sensor 144 emits a detection medium to a predetermined temperature measurement point to detect the temperature state of a predetermined position. When the temperature sensor 144 moves along the tilt adjustment frame 143 and the tilt angle changes, the tilt angle of the detection medium emitted by it also changes accordingly.

In this embodiment, the tilt adjustment frame 143 is a non-planar structure, and at least part of the tilt adjustment frame 143 is an undulating structure. When the temperature sensor 144 moves on the tilt adjustment frame 143, as the structure of the tilt adjustment frame 143 fluctuates, the movement trajectory of the temperature sensor 144 also fluctuates, and the tilt angle of the detection medium emitted by it also changes accordingly, thereby achieving the angle adjustment of the detection path 145 (temperature measurement line) of the detection medium in the vertical direction; further, the tilt adjustment frame 143 where the temperature sensor 144 is located is connected to the fixed bracket 142, and the fixed bracket 142 can rotate circumferentially along the circumferential groove of the circumferential adjustment member 141, and the tilt adjustment frame 144 carried by it 3 and the temperature sensor 144 can also rotate circumferentially, thereby realizing the adjustment of the plane circular azimuth of the temperature sensor 144, so that it can be rotated 360° on the plane, increasing the measurement area of the temperature sensor 144, thereby realizing the all-round angle measurement of the vacuum reaction chamber 110 and its internal components by the temperature sensor 144, and improving its temperature measurement and the flexibility of the temperature sensor 144 setting; at the same time, the adjustable bracket can adjust the temperature sensor 144 to perform multiple temperature measurements at the same position, ensuring the repeatability of the temperature measurement at the temperature measurement position.

Furthermore, the thin film processing device includes a component that is transparent to the detection medium of the temperature sensor 144, and the detection direction of the detection medium of the temperature sensor 144 is perpendicular to the surface of the component that is transparent to the detection medium on the detection path 145 of the detection medium, so as to reduce the refraction and reflection of the detection medium by the component that is transparent to the detection medium on the detection path 145, reduce the loss of the detection medium emitted by the temperature sensor 144, and further ensure the accuracy of its temperature measurement. At least a portion of the vacuum reaction chamber 110 is made of a material that can detect a medium through the temperature sensor 144. In a certain embodiment, the top wall 111 of the vacuum reaction chamber 110 is made of a material that is transparent to the detection medium. The temperature sensor 144 is used to measure the temperature of the wafer W in the vacuum reaction chamber 110. When the detection path of the detection medium is not perpendicular to the upper surface of the top wall 111, the detection medium will inevitably be reflected and refracted at the top wall 111, and its temperature measurement effect is greatly reduced, thereby reducing its temperature measurement accuracy. When the detection path 145 of the detection medium is perpendicular to the top wall 111, the loss of the detection medium emitted by the temperature sensor 144 on the detection path 145 can be effectively reduced, thereby improving its temperature measurement accuracy. In actual application, whether the detection path 145 of the detection medium of the temperature sensor 144 is perpendicular to the surface of the component transparent to the detection medium can be determined by the reflection ratio of the detection medium. Of course, other methods can also be used for determination, and the present invention is not limited to this.

As shown in FIG. 2 , in this embodiment, the circumferential adjustment member 141 is a planar circumferential fixed adjustment ring, which includes a circular slide groove. The temperature measurement assembly 140 includes a pair of fixed brackets 142 arranged in parallel, and the fixed brackets 142 are vertical fixed brackets, which include a bottom support portion, and the bottom support portion is slidably connected to the circular slide groove of the circumferential adjustment member 141, so that the fixed bracket 142 can rotate 360° along the circular slide groove, and then adjust it to any azimuth angle within the plane circle. In actual use, the fixed bracket 142 is driven by a driving device (not shown in the figure) to rotate along the circular slide groove of the circumferential adjustment member 141 to adjust the planar circumferential azimuth angle of the temperature sensor 144 carried by the fixed bracket 142. Furthermore, the circumferential adjustment member 141 and the fixed bracket 142 are both made of metal materials to ensure the mechanical strength and stability of the adjustable bracket. It should be noted that the shape of the circumferential adjustment member 141 is not limited to the above, and it can also be other structures with circumferential grooves, such as elliptical or square. The present invention does not limit its shape, as long as the fixed bracket 142 can change its azimuth along the groove of the circumferential adjustment member 141.

As shown in FIG1 , in this embodiment, the adjustable bracket of the temperature measuring assembly 140 further includes a pair of parallel tilt adjustment brackets 143, and the tilt adjustment bracket 143 is a convex arc-shaped structural bracket protruding upward, and the two ends of the arc-shaped structural bracket are respectively connected to two fixed brackets 142. Further, the central angle range corresponding to the arc-shaped structural bracket is 60° to 100°. In this embodiment, the angle on the left side of the vertical center line of the tilt adjustment bracket 143 is defined as negative, and the angle on the right side is defined as positive. The temperature sensor 144 moves on the tilt adjustment bracket 143, and the detection direction of the detection medium can be adjusted relative to the vertical center line of the tilt adjustment bracket 143 within a range of -35°C to 35°C. Of course, the numerical range of the central angle corresponding to the tilt adjustment frame 143 is not limited to the above, and the tilt adjustment range of the detection medium of the temperature sensor 144 is not limited to the above, and it can also be other numerical ranges, and the present invention is not limited to this. Optionally, the tilt adjustment frame 143 is made of metal or non-metallic material, and its structure is simple and easy to process. It should be noted that the number and shape structure of the tilt adjustment frame 143 are not limited to the above. In other embodiments, it can also be other quantities and structures, as long as the temperature sensor 144 can achieve the measurement tilt adjustment on the tilt adjustment frame 143, and the present invention is not limited to this. Furthermore, the number of the fixing brackets 142 is not limited to the above, and can be set to other numbers according to actual application requirements, and the present invention is not limited to this.

Furthermore, in this embodiment, the temperature sensor 144 is an infrared thermometer, which uses the infrared temperature measurement principle to measure the temperature of objects such as the wafer W, the wafer carrier 121, the cavity top wall 111 or the side wall 113 in a non-contact manner by emitting a detection medium, namely infrared rays. When the temperature sensor 144 is used to measure the temperature of the wafer W in the vacuum reaction chamber 110, the top wall 111 of the vacuum reaction chamber 110 is made of a material that can transmit the infrared rays of the infrared pyrometer. The infrared rays have a wavelength that can transmit the top wall 111 but not the wafer W, so as to measure the temperature state of the surface of the wafer W. When the temperature sensor 144 is used to measure the temperature of the top wall 111 of the vacuum reaction chamber 110, the infrared rays of the infrared pyrometer used have a wavelength that cannot transmit the top wall 111. Of course, the type of the temperature sensor 144 is not limited to the above, and it can also be other types of temperature measuring devices. The present invention is not limited thereto. In actual applications, an appropriate temperature sensor 144 can be used according to actual usage requirements. On the other hand, the present invention does not limit the number of temperature sensors 144 installed on the tilt adjustment frame 143, and can be installed according to actual needs. Each temperature sensor 144 measures the temperature of the same or different components to improve the detection accuracy of the temperature reaction field distribution in the vacuum reaction chamber 110, thereby providing a reliable data basis for the regulation of process conditions. It can be understood that the present invention does not limit the number of temperature measurement components 140 installed above the vacuum reaction chamber 110. In another embodiment, multiple temperature measurement components 140 are installed at different azimuth positions above the vacuum reaction chamber 110 to achieve all-round temperature measurement of the vacuum reaction chamber 110 and its internal components.

Optionally, an arc-shaped guide is provided between the temperature sensor 144 and the tilt adjustment frame 143 to guide the temperature sensor 144 to move on the tilt adjustment frame 143, thereby changing the tilt angle and measurement range during measurement. Furthermore, the arc-shaped guide includes an arc-shaped T-shaped boss and a T-shaped groove matched therewith, and the T-shaped groove is used to guide the T-shaped boss to move therein. In this embodiment, the tilt adjustment frame 143 is provided with an arc-shaped T-shaped groove, and the temperature sensor 144 is provided with an arc-shaped T-shaped boss, which matches the T-shaped groove so that the T-shaped boss of the temperature sensor 144 moves in the T-shaped groove of the tilt adjustment frame 143. In actual use, the temperature sensor 144 is driven by a driving device to move its T-shaped boss along the T-shaped groove of the tilt adjustment frame 143, thereby changing its position on the tilt adjustment frame 143 to adjust the tilt of the temperature sensor 144. It is understood that in another embodiment, the tilt adjustment frame 143 is provided with arc-shaped T-shaped bosses, and the temperature sensor 144 is provided with arc-shaped T-shaped grooves. Optionally, the driving device is a stepping motor. It should be noted that the driving device is not limited to the above, and it can also be other structures, and the present invention does not limit this. Of course, the movement of the temperature sensor 144 on the tilt adjustment frame 143 and the rotation of the fixed bracket 142 along the circumferential slide groove of the circumferential adjustment member 141 can also be directly adjusted manually by the staff, and the present invention does not limit the adjustment drive source. Furthermore, a mechanical fastening device can be set separately. After the movement and adjustment of the temperature sensor 144 on the tilt adjustment frame 143 are completed, the temperature sensor 144 and the tilt adjustment frame 143 are locked and fixed by the mechanical fastening device. Of course, it is also possible not to lock and fix them by the mechanical fastening device, but to use the friction between the two to fix them relatively, and the present invention does not limit this.

It is understandable that the fixing method of the temperature sensor 144 is not limited to the above, and it can also be other fixing methods, as long as the tilt adjustment and fixation of the temperature sensor 144 on the tilt adjustment frame 143 can be achieved. For example, in another embodiment, the tilt adjustment frame 143 is provided with an arc-shaped through groove, and the temperature sensor 144 is provided with a through hole corresponding to the arc-shaped through groove. The connecting shaft passes through the arc-shaped through groove and the through hole to connect the tilt adjustment frame 143 and the temperature sensor 144, and both ends of the connecting shaft include mechanical fastening devices (such as bolt assemblies) to lock and fix the temperature sensor 144 and the tilt adjustment frame 143. In actual use, the mechanical fastening device is adjusted so that the temperature sensor 144 can move along the arc-shaped slot of the tilt adjustment frame 143 to adjust the tilt angle and measurement range during measurement. After the measurement state of the temperature sensor 144 is adjusted to a predetermined state, the mechanical fastening device is adjusted to lock it on the tilt adjustment frame 144 for subsequent temperature measurement. In another embodiment, the tilt adjustment frame 143 is provided with an arc-shaped through groove, and the temperature sensor 144 is provided with a through hole corresponding to the arc-shaped groove. The connecting shaft passes through the arc-shaped through groove and the through hole to connect the tilt adjustment frame 143 and the temperature sensor 144. The contact area between the connecting shaft and the arc-shaped through groove includes multiple edges and corners, which can prevent the connecting shaft from rotating in the arc-shaped groove, so that the temperature sensor 144 can be fixed on the tilt adjustment frame 143 without too many additional mechanical fastening devices. Of course, the groove structure on the tilt adjustment frame 143 is not limited to an arc shape, it can also be other shapes, as long as the tilt adjustment of the temperature sensor 144 can be achieved, and the present invention is not limited to this; similarly, the tilt adjustment frame 143 may not have an arc groove, but may have multiple openings distributed at different positions, so that the connecting shaft passes through the opening and the through hole to lock and fix the two.

Based on the same inventive concept, the present invention also discloses a method for adjusting the measuring angle of the temperature measuring assembly 140 of the film processing device, as shown in FIG3 , the method comprising: adjusting the fixed bracket 142 to rotate along the circumferential groove of the circumferential adjusting member 141 to adjust the plane circumferential azimuth of the temperature sensor 144; adjusting the position of the temperature sensor 144 on the inclination adjusting bracket 143 to adjust the inclination of the temperature sensor 144. It should be noted that the order of adjusting the plane circumferential azimuth and inclination of the temperature sensor 144 is not limited to the above. In other embodiments, the inclination may be adjusted first and then the plane circumferential azimuth is adjusted. The present invention does not limit the order of adjustment. When the plane circular azimuth angle of the temperature sensor 144 is adjusted, the temperature sensor 144 and the tilt adjustment bracket 143 are in a locked and fixed state (the tilt angle remains unchanged); when the tilt angle of the temperature sensor 144 is adjusted, the fixed bracket 142 and the circumferential adjustment member 141 are in a locked and fixed state (the plane circular azimuth angle remains unchanged).

Furthermore, when the temperature sensor 144 is used to measure the temperature of the wafer W in the vacuum reaction chamber 110, the top wall 111 of the vacuum reaction chamber 110 is made of a material that can detect the medium through the temperature sensor 144. In practical applications, in order to prevent the top wall 111 from slightly refraction of the temperature sensor 144 detecting the medium path, thereby causing a slight loss of the detecting medium on the detecting path 145, the forward direction of the detecting medium of the temperature sensor 144 (detection path) is perpendicular to the top wall 111 of the vacuum reaction chamber 110, so as to minimize the interference of the top wall 111 on the detecting medium of the temperature sensor 144, thereby ensuring that the temperature detected by the temperature sensor 144 is the accurate temperature of the predetermined detection position, ensuring the accuracy of the measurement data, and thus ensuring the accurate measurement of the temperature field distribution in the cavity, providing reliable data support for the process parameter adjustment in the process, ensuring the quality of the wafer W production, and improving its production yield.

It should be noted that the structure of the adjustable bracket of the temperature measuring component 140 in the present invention is not limited to the above, and it can also be other structures, as long as the corresponding functions of the above adjustable bracket can be realized, and the present invention is not limited to this. For example, in another embodiment, as shown in FIG4 , the adjustable bracket of the temperature measuring component 140 includes a circumferential adjustment member 141, a pair of fixed brackets 142 and an inclination adjustment bracket 143, and a temperature sensor 144 is arranged on the inclination adjustment bracket 143, and the inclination adjustment bracket 143 is a concave arc-shaped structural bracket. The temperature sensor 144 can move on the inclination adjustment bracket 143, and the connection method of the temperature sensor 144 and the inclination adjustment bracket 143 is similar or the same as that of the present embodiment, and will not be repeated here. Furthermore, the thin film processing device of the present invention is not limited to the above-mentioned chemical vapor deposition device, and it can also be other types of thin film processing devices. For example, in another embodiment, it is an atomic layer deposition device, and the present invention does not limit its type.

Embodiment 2

Based on the structural characteristics of the thin film processing device of the first embodiment, this embodiment makes some changes to the cavity structure and the structure of the temperature measuring component 240, mainly making some changes to the adjustable bracket of the temperature measuring component 240.

As shown in combination with FIG. 5 to FIG. 9 , in this embodiment, the thin film processing device includes not only the components in the first embodiment, but also an outer cavity 250, wherein the outer cavity 250 is disposed on the outer side of the vacuum reaction chamber 210, and the heating device 230 is located in the space surrounded by the outer cavity 250 and the top wall of the vacuum reaction chamber 210.

Similar to or identical to the first embodiment, as shown in combination with FIG. 5 and FIG. 6 , in this embodiment, the temperature measuring assembly 240 includes a temperature sensor 244 and an adjustable bracket, and the adjustable bracket includes a circumferential adjusting member 241, a pair of fixed brackets 242 and an angle adjusting bracket 243, and the circumferential adjusting member 241 is arranged at the top of the outer cavity 250. Furthermore, the adjustable bracket of the temperature measuring assembly 240 also includes a connecting member 246, a retractable device 247 and an observation window structure 248. The connecting member 246 is connected to the outer cavity 250 of the thin film processing device, and the bottom of the retractable device 247 is connected to the top of the connecting member 246. One end of the observation window structure 248 is connected to the retractable device 247, and the other end thereof is connected to the temperature sensor 244. The temperature sensor 244 can rotate relative to the observation window structure 248. The observation window structure 248 includes a transparent structure, and the transparent structure is always perpendicular to the forward direction of the detection medium emitted by the temperature sensor 244 to reduce the interference factors of the detection medium on the detection path 245.

In this embodiment, a detection hole is opened on the top wall of the outer cavity 250, and the connecting piece 246 is connected to the detection hole. The bottom of the connecting piece 246 passes through the detection hole and enters the space between the vacuum reaction chamber 210 and the outer cavity 250 to avoid the influence of the outer cavity 250 on the transmission of the detection medium of the temperature sensor 244. Furthermore, during the process, the outer cavity 250 and the vacuum reaction chamber 210 are in a vacuum environment. Since the bottom of the connector 246 passes through the detection hole on the top wall of the outer cavity 250, the area enclosed by the connector 246, the retractable device 247 and the observation window structure 248 is also a vacuum environment, so as to further ensure the vacuum degree between the outer cavity 250 and the vacuum reaction chamber 210 and relieve the pressure of the vacuum reaction chamber 210. It is understandable that in other embodiments, the outer cavity 250 and the vacuum reaction chamber 210 are in an atmospheric pressure environment.

Optionally, the connector 246 is a flange structure; the retractable device 247 is a bellows structure. When the outer cavity 250 and the vacuum reaction chamber 210 are in a vacuum environment, the connector 246 is a CF/KF flange, which is made of metal material. The end of the CF/KF flange without a connecting flange is welded to the detection hole on the top wall of the outer cavity 250, and the end with a connecting flange is connected to the bellows structure. The bellows structure is made of metal material, one end of which includes a connecting flange matching the observation window structure 248 and is further connected to the observation window structure 248, and the other end is connected to the CF/KF flange. The bellows structure can further ensure good sealing between the outer cavity 250 and the vacuum reaction chamber 210. At the same time, when the temperature sensor 244 changes its plane circumferential azimuth and vertical tilt angle in any direction through the adjustable bracket, the bellows structure is deformed and adjusted accordingly without affecting the vacuum degree between the outer cavity 250 and the vacuum reaction chamber 210. It can be understood that the structure of the connector 246 and the retractable device 247 is not only as described above, but can also be other structures that can achieve the same function, and the present invention is not limited thereto.

In this embodiment, the observation window structure 248 is an infrared window, which includes glass that can only transmit the detection medium of the specific wavelength of the temperature sensor 244. The glass is perpendicular to the forward direction of the detection medium of the temperature sensor 244 to avoid damage to the detection medium. On the other hand, the glass further ensures the sealing of the space surrounded by the observation window structure 248, the retractable device 247, the connecting piece 246, the outer cavity 250 and the top wall of the vacuum reaction chamber 210, which helps to maintain the vacuum degree of the space. Optionally, the material of the glass can be _CaF2 or _MgF2 or _BaF2 . In this embodiment, the glass is made of _CaF2 . Furthermore, the temperature sensor 244 is connected to the observation window structure 248 via a mechanical fastening device. In this embodiment, the temperature sensor 244 is connected to the observation window structure 248 via a bearing assembly, which can ensure the stability of the connection between the two and allow the observation window structure 248 to rotate relative to the temperature sensor 244, so as to ensure that when the fixed bracket 242 rotates along the circumferential adjustment member 241, the temperature sensor 244 can also rotate accordingly, thereby realizing the change of its plane circumferential azimuth. Of course, the connection method of the temperature sensor 244 and the observation window structure 248 is not limited to the above, and it can also be other connection methods, and the present invention is not limited to this.

Furthermore, in this embodiment, the connector 246 is connected to the retractable device 247 via a mechanical fastening device, and the retractable device 247 is connected to the observation window structure 248 via a mechanical fastening device. Of course, the connection method of the connector 246, the retractable device 247, and the observation window structure 248 is not limited to the above, and it can also be other connection methods, and the present invention is not limited to this.

As shown in FIG7 and FIG8, it is an example schematic diagram of the temperature measurement and adjustment of the top wall of the vacuum reaction chamber 210 by the temperature measuring assembly 240 of this embodiment. By adjusting the position of the temperature sensor 244 on the tilt adjustment frame 243, its vertical tilt angle can be adjusted. As shown in FIG7, the temperature sensor 244 can be adjusted to move on the tilt adjustment frame 243 in the direction of arrow 260. Furthermore, by adjusting the fixed bracket 242 to rotate along the circumferential groove of the circumferential adjustment member 241, the azimuth angle change of the temperature sensor 244 carried by the fixed bracket 242 on the plane can be further adjusted. As shown in FIG8, the fixed bracket 242 can be adjusted in the direction of arrow 270, thereby changing the measurement angle of the temperature sensor 244, so as to achieve its all-round angle measurement of the vacuum reaction chamber 210 and its internal components. As shown in FIG9 , in another embodiment, a temperature measuring assembly 240 is additionally provided above the outer cavity 250 to measure the temperature state of the wafer W in the vacuum reaction chamber 210. In this embodiment, the forward direction of the detection medium of the temperature sensor 244 is perpendicular to the top wall surface of the vacuum reaction chamber 210 to reduce the loss of the detection medium and improve the accuracy of its temperature measurement. During actual measurement, the fixing bracket 242 can be adjusted in the direction of the arrow 280, thereby changing the measurement angle of the temperature sensor 244 carried thereon in the plane circumferential direction. Of course, the moving direction of the temperature sensor 244 on the tilt adjustment bracket 243 and the rotation direction of the fixed bracket 242 along the circumferential groove are not limited to the above, and can also be other directions, which can be adjusted according to actual process requirements. For example, in a certain embodiment, the rotation direction of the fixed bracket 242 along the circumferential groove is adjusted to be clockwise.

In addition, other structures and functions of each component of this embodiment, such as the circumferential adjustment member 241, the fixed bracket 242 and the tilt adjustment bracket 243, are the same as those in the first embodiment and will not be described in detail here.

In summary, in an angle adjustment method, an adjustable bracket and a film processing device thereof of the present invention, the adjustable bracket combines a circumferential adjustment member 141, a fixed bracket 142 and an angle adjustment bracket 143, so that the vertical inclination angle and the plane circumferential angle of the temperature sensor 144 during measurement can be adjusted, thereby increasing the temperature measurement area range of the temperature sensor 144. One temperature sensor 144 can measure hundreds or even thousands of positions, thereby improving the flexibility of the temperature sensor 144 in setting and measuring temperature. At the same time, the adjustable bracket can adjust the temperature sensor 144 to perform multiple temperature measurements at the same position, thereby ensuring the repeatability of the temperature measurement at the temperature measurement position.

Furthermore, the adjustable bracket can make the detection medium of the temperature sensor 144 perpendicular to the "transparent (transparent through the detection medium)" object on the detection path 145, reducing the influence of other components on the detection effect of the detection medium and improving the temperature measurement accuracy of the temperature sensor.

Furthermore, the adjustable bracket enables the temperature sensor 144 to adjust the temperature measurement angle of the vacuum reaction chamber 110 and its internal components under vacuum state, and its structure is simple, easy to operate, and has high repeatability.

Although the content of the present invention has been described in detail through the above preferred embodiments, it should be recognized that the above description should not be considered as a limitation of the present invention. After reading the above content, various modifications and substitutions of the present invention will be obvious to those skilled in the art. Therefore, the protection scope of the present invention should be limited by the scope of the attached patent application.

110: vacuum reaction chamber 111: top wall 112: bottom wall 113: side wall 120: wafer support structure 121: wafer carrier 122: support frame 130: heating device 140: temperature measuring assembly 141: circumferential adjustment member 142: fixed support 1421: third position 143: tilt adjustment frame 1431: first position 1432: second position 144: temperature sensor 145: detection path 210: vacuum reaction chamber 230: heating device 240: temperature measuring assembly 241: circumferential adjustment member 242: fixed support 243: tilt adjustment frame 244: temperature sensor 245: Detection path 246: Connector 247: Retractable device 248: Observation window structure 250: External cavity W: Wafer H1: Vertical distance H2: Vertical distance

FIG1 is a schematic diagram of a thin film processing device of the present invention; FIG2 is a top view of the thin film processing device of FIG1; FIG3 is a measurement angle adjustment method of a temperature measuring component of the present invention; FIG4 is a structural schematic diagram of another adjustable bracket of the present invention; FIG5 is a schematic diagram of another thin film processing device of the present invention; FIG6 is a top view of the thin film processing device of FIG5; FIG7 is a schematic diagram of the vertical tilt angle adjustment of the temperature sensor in FIG5 for measuring the temperature of the vacuum reaction chamber; FIG8 is a schematic diagram of the plane circumferential azimuth adjustment of the temperature sensor in FIG5 for measuring the temperature of the vacuum reaction chamber; FIG9 is a schematic diagram of the plane circumferential azimuth adjustment of a temperature sensor for measuring the temperature of a wafer.

210: Vacuum reaction chamber

230: Heating device

240: Temperature measurement component

241: Circumferential adjustment piece

242:Fixed bracket

243: Tilt adjustment bracket

244: Temperature sensor

245: Detection path

246: Connectors

247:Retractable device

248:Observation window structure

250:External cavity

W: Wafer

Claims (21)

An adjustable bracket for a temperature measuring assembly of a film processing device, comprising: a circumferential adjustment member, which is arranged on the outer side of a vacuum reaction chamber of the film processing device, and the circumferential adjustment member comprises a circumferential slide groove; at least one fixed bracket, the bottom of the fixed bracket is slidably connected to the circumferential slide groove, and the fixed bracket can rotate circumferentially along the circumferential slide groove; an inclination adjustment frame, whose two ends are connected to the fixed bracket, the inclination adjustment frame comprises a first position and a second position, the fixed bracket comprises a third position, the distance between the first position and the third position is greater than the distance between the second position and the third position, and the inclination adjustment frame is provided with a temperature sensor and the temperature sensor can move along the inclination adjustment frame. An adjustable bracket as described in claim 1, wherein, the thin film processing device includes a component that is transparent to the detection medium of the temperature sensor, and the detection direction of the detection medium of the temperature sensor is perpendicular to the surface of the component that is transparent to the detection medium on its detection path. The adjustable bracket as described in claim 1, wherein, the tilt adjustment bracket is an arc-shaped structural bracket. An adjustable bracket as described in claim 3, wherein, the arc-shaped bracket is a concave structure or a convex structure. An adjustable bracket as described in claim 3, wherein, the central angle range corresponding to the tilt adjustment bracket is 60° to 100°. An adjustable bracket as described in claim 3, wherein, an arc-shaped guide is provided between the temperature sensor and the tilt adjustment frame to guide the temperature sensor to move on the tilt adjustment frame. The adjustable bracket as described in claim 6, wherein, the arc-shaped guide member includes arc-shaped T-shaped bosses and T-shaped grooves adapted thereto, and the T-shaped grooves are used to guide the T-shaped bosses to move therein; the T-shaped bosses are arranged on the temperature sensor, and the T-shaped grooves are arranged on the tilt adjustment frame, or the T-shaped bosses are arranged on the tilt adjustment frame, and the T-shaped grooves are arranged on the temperature sensor. An adjustable bracket as described in claim 1, wherein, the temperature sensor is connected to the tilt adjustment bracket via a connecting shaft, and the connecting shaft fixes the temperature sensor on the tilt adjustment bracket via a mechanical fastening device. The adjustable bracket as described in claim 1, wherein, the temperature sensor is arranged on the tilt adjustment bracket via a connecting shaft, and the contact area between the connecting shaft and the tilt adjustment bracket includes an edge. The adjustable bracket as described in claim 1, further comprising: A connector connected to the chamber of the film processing device; A retractable device, the bottom of which is connected to the top of the connector; An observation window structure, one end of which is connected to the retractable device and the other end of which is connected to the temperature sensor, the temperature sensor can rotate relative to the observation window structure, and the observation window structure includes a transparent structure, and the transparent structure is always perpendicular to the forward direction of the detection medium emitted by the temperature sensor. An adjustable bracket as described in claim 10, wherein the retractable device is a bellows structure. An adjustable bracket as described in claim 10, wherein, the connecting member is a flange structure. An adjustable bracket as described in claim 10, wherein: the connector is connected to the retractable device via a mechanical fastening device; the retractable device is connected to the observation window structure via a mechanical fastening device; the temperature sensor is connected to the observation window structure via a mechanical fastening device. A thin film processing device, comprising: a vacuum reaction chamber; a plurality of heating devices disposed outside the vacuum reaction chamber to provide heat energy to the vacuum reaction chamber; a temperature measuring component comprising a temperature sensor and an adjustable bracket as described in any one of claims 1 to 13. A thin film processing device as described in claim 14, wherein, at least a portion of the vacuum reaction chamber is made of a material that can detect the medium through the temperature sensor. The thin film processing device as described in claim 14, further comprising: An external chamber disposed outside the vacuum reaction chamber. The thin film processing device as described in claim 16, wherein: the circumferential adjustment member is arranged at the top of the outer cavity; the top wall of the outer cavity is provided with a detection hole, and the connecting member is connected to the detection hole. The thin film processing device as described in claim 16, wherein: The space between the outer cavity and the vacuum reaction chamber is a vacuum environment; The space enclosed by the connector, the retractable device and the observation window structure is a vacuum environment. A thin film processing device as described in claim 14, wherein the temperature sensor is an infrared thermometer. A method for adjusting the measuring angle of a temperature measuring assembly of a thin film processing device as described in any one of claims 14 to 19, comprising: The adjusting fixed bracket rotates along the circumferential slide groove of the circumferential adjusting member; Adjusting the position of the temperature sensor on the tilt adjustment bracket to adjust the measuring angle of the temperature sensor. The method for adjusting the measurement angle of the temperature measuring component as described in claim 20, wherein the detection direction of the detection medium of the temperature sensor is perpendicular to the top wall of the vacuum reaction chamber.