TW202412054A - An apparatus for treating substrate - Google Patents

Abstract

The present invention provides a device for processing a substrate. The device for processing a substrate may include: an outer shell, the outer shell provides a processing space inside; a plasma generating unit, the plasma generating unit generates plasma from a process gas; an induction unit, the induction unit is located between the plasma generating unit and the outer shell, and provides a passage for supplying the plasma to the processing space; and a sealing member, the sealing member provides a connection part for sealing the plasma generating unit and the induction unit; wherein the sealing member may include: a sealing member; a sealing member flange, the sealing member flange supports the sealing member; and a sealing member shield, the sealing member shield blocks the sealing member from being directly exposed to the plasma flowing out through the gap of the connection part.

Description

Equipment for processing substrates

The present invention relates to an apparatus for processing a substrate, and more particularly, to an apparatus for processing a substrate having a sealing member.

Generally, in semiconductor manufacturing equipment, O-rings are used as sealing components to maintain the vacuum inside the chamber. Ordinary O-rings block the gaps between components by physical pressure. However, in the previous O-ring-based sealing structure, the O-ring and the structure around the O-ring will expand due to high heat. As a result, the connection force of the sealing structure is weakened, and external gas will flow into the chamber or the process gas inside the chamber will flow out of the chamber.

In addition, depending on the characteristics of the process gas used inside the chamber, the sealing structure based on the O-ring may be damaged. When the sealing structure is damaged, particles caused by the damage flow into the chamber and cause process defects, and the bonding force of the sealing structure will be weakened.

Fig. 1 is a diagram showing a plasma source unit and a part of a chamber in an apparatus for processing a substrate using plasma. Fig. 2 is an enlarged diagram showing a connection portion between the plasma source unit and the chamber.

Referring to FIG. 1 and FIG. 2 , a gap may be formed between the lower end of the plasma source part 1000 and the upper end of the chamber 2000. An O-ring 3000 is provided between the plasma source part 1000 and the chamber 2000 to seal the gap, and the O-ring 3000 is exposed to process gas and/or heat through the fine gap formed between the plasma source part 1000 and the chamber 2000. The connected O-ring 3000 is corroded by the process gas or deformed by heat. Therefore, a process leak occurs due to the damaged O-ring 3000, and the maintenance time and cost of replacing the damaged O-ring 3000 increase.

[Technical topics]

An object of the present invention is to provide an apparatus for processing a substrate capable of minimizing damage to a sealing member for maintaining a vacuum degree inside the apparatus.

In addition, an object of the present invention is to provide an apparatus for processing a substrate that can efficiently maintain the internal pressure of the apparatus.

In addition, an object of the present invention is to provide an apparatus for processing a substrate capable of increasing the life of a sealing member to reduce maintenance costs and time.

The purpose of the present invention is not limited to this, and other purposes not mentioned can be clearly understood by practitioners from the following description. [Technical solution]

According to one aspect of the present invention, a device for processing a substrate can be provided, comprising: an outer shell, wherein the outer shell provides a processing space inside; a plasma generating unit, wherein the plasma generating unit generates plasma from a process gas; an induction unit, wherein the induction unit is located between the plasma generating unit and the outer shell and provides a passage for supplying the plasma to the processing space; and a sealing member, wherein the sealing member provides a connection portion for sealing the plasma generating unit and the induction unit; wherein the sealing member comprises: a seal; a seal flange, wherein the seal flange supports the seal; and a seal shield, wherein the seal shield blocks the seal from being directly exposed to the plasma flowing out through the gap of the connection portion.

In addition, the aforementioned sealing shield can have a cross-sectional shape having a vertex intersected by two sides, and the aforementioned vertex can be configured to face the aforementioned gap.

In addition, the aforementioned sealing cover can be formed in a triangular manner in its cross-sectional shape and configured so that any vertex faces the aforementioned gap.

In addition, the opposite side of the sealing cover facing the aforementioned apex can be configured in a recessed manner.

In addition, the aforementioned seal shield can be made of a material that is more resistant to plasma corrosion than the aforementioned seal.

In addition, the seal flange may include a cooling line for flowing a refrigerant to reduce the temperature of the seal.

In addition, the aforementioned seal shield may be provided in a ring shape.

In addition, the seal shield may have a cross-sectional shape corresponding to the additional space that occurs when the seal is compressed in the seal groove of the seal flange.

According to another aspect of the present invention, a device for processing a substrate can be provided, wherein the device for processing a substrate includes a sealing component, wherein the sealing component seals a gap between a first component and a second component in contact with the first component, wherein the sealing component includes: a sealing flange, wherein the sealing flange has a sealing groove and is fixed to the second component; a seal, wherein the seal is arranged in the sealing groove and compressed by the sealing flange; and a sealing cover, wherein the sealing cover blocks the seal from being directly exposed to the plasma flowing out through the gap.

In addition, the seal shield may have a cross-sectional shape corresponding to the additional space that occurs when the seal is compressed in the seal groove of the seal flange.

In addition, the aforementioned sealing shield can have a cross-sectional shape having a vertex intersected by two sides, and the aforementioned vertex can be configured to face the aforementioned gap.

In addition, the aforementioned sealing cover can be formed in a triangular manner in its cross-sectional shape and configured so that any vertex faces the aforementioned gap.

In addition, the opposite side of the sealing cover facing the aforementioned apex can be configured in a recessed manner.

In addition, the opposite side of the sealing cover facing the aforementioned apex can be configured to protrude, and the aforementioned opposite side can be in contact with the aforementioned sealing.

In addition, the aforementioned seal shield can be made of a material that is more resistant to plasma corrosion than the aforementioned seal.

In addition, the seal flange may include a cooling line for flowing a refrigerant to reduce the temperature of the seal.

In addition, the aforementioned sealing cover can be configured in a ring shape. [Effect of the invention]

According to one embodiment of the present invention, damage to the sealing member caused by pressure changes inside the chamber can be minimized.

In addition, according to an embodiment of the present invention, the damage of the sealing member caused by the plasma inside the chamber can be minimized.

In addition, according to one embodiment of the present invention, plasma or gas flowing inside the chamber can be prevented from flowing out of the chamber.

In addition, according to an embodiment of the present invention, the pressure inside the equipment can be efficiently maintained.

In addition, according to an embodiment of the present invention, the durability of the sealing member can be increased, and the cost and time required for maintaining equipment for processing substrates can be reduced.

The effects of the present invention are not limited to the above effects, and the effects not mentioned can be clearly understood by those skilled in the art in the technical field to which the present invention belongs from this specification and the accompanying drawings.

The following is a more detailed description of an embodiment of the present invention with reference to the drawings. The embodiments of the present invention can be transformed into various forms, and it should not be interpreted that the scope of the present invention is limited to the embodiments described below. The present embodiments are provided to more completely describe the present invention to the general skilled person in the industry. Therefore, in order to emphasize a more clear description, the shapes of the constituent elements in the drawings are exaggerated.

The embodiments of the present invention are described in detail below with reference to FIGS. 3 to 14 .

FIG. 3 is a diagram schematically showing an apparatus for processing a substrate according to an embodiment of the present invention.

3, the equipment 1 for processing a substrate includes an equipment front end module (Equipment Front End Module: EFEM) 20 and a processing module 30. The equipment front end module 20 and the processing module 30 are arranged in one direction. Hereinafter, the direction in which the equipment front end module 20 and the processing module 30 are arranged is defined as a first direction 11. In addition, when viewed from above, a direction perpendicular to the first direction 11 is defined as a second direction 12, and a direction perpendicular to both the first direction 11 and the second direction 12 is defined as a third direction 13.

The equipment front-end module 20 has a load port 10 and a transfer frame 21. The load port 10 is arranged in front of the equipment front-end module 20 along the first direction 11. The load port 10 has a plurality of support parts 6. Each support part 6 is arranged in a row along the second direction 12, and is provided with a carrier C (such as a carrier box, FOUP, etc.) for storing substrates W to be provided to the process and substrates W that have been processed in the process. The carrier C stores substrates W to be provided to the process and substrates W that have been processed in the process. The transfer frame 21 is arranged between the load port 10 and the processing module 30. The transfer frame 21 includes a first transfer robot 25 that is arranged therein and transfers the substrate W between the load port 10 and the processing module 30. The first transfer robot 25 moves along a transfer rail 27 provided in the second direction 12 to transfer the substrate W between the carrier C and the processing module 30.

The processing module 30 includes a load gate chamber 40 , a transfer chamber 50 , and a process chamber 60 .

The loading gate chamber 40 is disposed adjacent to the transfer frame 21. As an example, the loading gate chamber 40 may be disposed between the transfer chamber 50 and the equipment front end module 20. The loading gate chamber 40 provides a space for a substrate W provided to a process to wait before being transferred to the process chamber 60 or for a substrate W after a process is completed to wait before being transferred to the equipment front end module 20.

The transfer chamber 50 is disposed adjacent to the loading gate chamber 40. The transfer chamber 50 has a polygonal main body when viewed from above. As an example, the transfer chamber 50 may have a pentagonal main body when viewed from above. On the outer side of the main body, the loading gate chamber 40 and a plurality of process chambers 60 are disposed along the outer periphery of the main body. A passage (not shown) for the substrate W to enter and exit is formed on each side wall of the main body, and the passage connects the transfer chamber 50 and the loading gate chamber 40 or the process chamber 60. A door (not shown) is provided on each passage to open and close the passage and seal the inside.

In the internal space of the transfer chamber 50, a second transfer robot 53 for transferring substrates W between the loading gate chamber 40 and the process chamber 60 is arranged. The second transfer robot 53 transfers an unprocessed substrate W waiting in the loading gate chamber 40 to the process chamber 60, or transfers a substrate W after a process is completed to the loading gate chamber 40. In addition, the substrate W is transferred between the process chambers 60 in order to sequentially provide the substrates W to a plurality of process chambers 60. As an example, as shown in FIG. 3, when the transfer chamber 50 has a pentagonal body, the loading gate chambers 40 are respectively arranged on the side walls adjacent to the equipment front end module 20, and the process chambers 60 are continuously arranged on the remaining side walls. The shape of the transfer chamber 50 is not limited thereto and can be configured in various shapes according to the required process modules.

The process chamber 60 is arranged along the outer periphery of the transfer chamber 50. A plurality of process chambers 60 may be provided. Process processing of the substrate W may be performed in each process chamber 60. The process chamber 60 receives the transferred substrate W from the second transfer robot 53 and performs process processing, and provides the substrate W after the process processing to the second transfer robot 53. The process processing performed in each process chamber 60 may be different from each other.

The process performed in each process chamber 60 may be different from each other. The process performed in the process chamber 60 may be a process in the process of producing a semiconductor device or a display panel using the substrate W. The substrate W processed by the apparatus 1 for processing a substrate is a broad concept including all substrates used for manufacturing semiconductor devices or flat panel displays (FPD: flat panel display) and other objects having a circuit pattern formed on a thin film. Examples of such substrates W include silicon wafers, glass substrates, organic substrates, etc.

Fig. 4 is a diagram schematically showing a process chamber for performing a plasma treatment process in the process chamber of the apparatus for processing a substrate shown in Fig. 3. The process chamber 60 for performing a plasma treatment process according to an embodiment of the present invention will be described below.

4 , the process chamber 60 performs a predetermined process on the substrate W using plasma. As an example, a thin film on the substrate W may be etched or ashed. The thin film may be a variety of films such as a polysilicon film, an oxide film, and a silicon nitride film. Alternatively, the thin film may be a natural oxide film or a chemically generated oxide film.

The process chamber 60 may include a process unit 100 , an exhaust unit 200 , a plasma supplying unit 300 , an induction unit 340 , and a sealing member 400 .

The process unit 100 provides a space for placing a substrate W and performing processing on the substrate W. The plasma generating unit 300 described later discharges the process gas to generate plasma and supplies it to the internal space of the process unit 100. The process gas retained in the process unit 100 and/or the reaction byproducts generated in the process of processing the substrate W are exhausted to the outside of the process chamber 60 through the exhaust unit 200 described later. Therefore, the pressure in the process unit 100 can be maintained at the set pressure.

The process unit 100 may include a housing 110 , a support unit 120 , a baffle 130 , and an exhaust baffle 140 .

A processing space 111 for performing a substrate processing process is provided inside the housing 110. The outer wall of the housing 110 may be provided with a conductor. As an example, the outer wall of the housing 110 may be provided with a metal material including aluminum. The housing 110 may be open at the top and may have an opening (not shown) formed on the side wall. The substrate W enters and exits the interior of the housing 110 through the opening. The opening (not shown) may be opened and closed by means of an opening and closing component such as a door (not shown). In addition, an exhaust hole 112 may be formed on the bottom surface of the housing 110. The exhaust hole 112 may be connected to a structure including an exhaust unit 200 described later.

The supporting unit 120 may be located in the processing space 111. The supporting unit 120 supports the substrate W in the processing space 111. The substrate W to be processed is placed on the supporting unit 120. The supporting unit 120 may include a supporting plate 121 and a supporting shaft 122.

The support plate 121 can be roughly configured in the shape of a circular plate when observed from the top. The support plate 121 is supported by the support shaft 122. The support plate 121 can be connected to an external power source (not shown). The support plate 121 can generate static electricity by means of the power input from the external power source. The electrostatic attraction of the generated static electricity can fix the substrate W on the support plate 121. However, it is not limited to this. The support plate 121 can support the substrate W by physical means such as mechanical clamping or vacuum adsorption.

The support shaft 122 can move an object. For example, the support shaft 122 can move the substrate W in the up-down direction. As an example, the support shaft 122 can be combined with the support plate 121, and the support plate 121 can be raised and lowered to move the substrate W placed on the support plate 121 up and down.

The baffle 130 is located on the upper part of the support plate 121. The baffle 130 can be arranged between the support plate 121 and the plasma generating unit 300. The baffle 130 can be made of an aluminum material with an oxidized surface. The baffle 130 can be electrically connected to the upper wall of the housing 110. The baffle 130 can be arranged roughly in the shape of a circular plate with a thickness. The baffle 130 can be arranged roughly in a circular shape when viewed from above. The baffle 130 can be arranged to overlap with the upper surface of the support unit 120 when viewed from above.

A baffle hole 131 is formed on the baffle 130. A plurality of baffle holes 131 may be provided. The baffle holes 131 may be provided spaced apart from each other. As an example, the baffle holes 131 may be formed at predetermined intervals on concentric circles so as to uniformly supply free radicals. The baffle hole 131 may pass through from the upper end to the lower end of the baffle 130. The baffle hole 131 may function as a passage for the plasma generated by the plasma generating unit 300 to flow to the processing space 111.

The baffle 130 may uniformly transfer the plasma generated by the plasma generating unit 300 to the processing space 111. In addition, the plasma diffused into the flow space 341 described later may flow into the processing space 111 through the baffle hole 131. According to one example, charged particles such as electrons or ions collide with the baffle 130, and uncharged neutral particles such as oxygen radicals may pass through the baffle hole 131 and be supplied to the substrate W. In addition, the baffle 130 may be grounded to form a path for electrons or ions to move.

The baffle 130 of one embodiment of the present invention is described as an example in which it is configured as a circular plate with a thickness, but it is not limited thereto. The baffle 130 of one embodiment has a circular shape when viewed from the top, and may have a shape in which the height of the upper surface increases from the edge area to the central area when viewed from the end surface. As an example, the baffle 130 may have a shape in which the upper surface is inclined upward from the edge area to the central area when viewed from the end surface. Therefore, the plasma generated by the plasma generating unit 300 may flow toward the edge area of the processing space 111 along the inclined end surface of the baffle 130.

The exhaust baffle 140 allows plasma to be uniformly discharged from the processing space 111 by area. In addition, the exhaust baffle 140 can adjust the retention time of the plasma flowing in the processing space 111. The exhaust baffle 140 has a ring shape when viewed from above. The exhaust baffle 140 can be located between the inner side wall of the housing 110 and the support unit 120 in the processing space 111. A plurality of exhaust holes 141 are formed on the exhaust baffle 140. The exhaust holes 141 can be provided as holes extending from the upper end to the lower end of the exhaust baffle 140. The exhaust holes 141 can be arranged spaced apart from each other along the circumferential direction of the exhaust baffle 140. The reaction byproducts passing through the exhaust baffle 140 are exhausted to the outside through exhaust lines 201 and 202 to be described later, so as to be exhausted to the outside of the process unit 100.

The exhaust unit 200 can exhaust the process gas and/or impurities in the processing space 111 to the outside. The exhaust unit 200 can exhaust impurities and particles generated in the process of processing the substrate W to the outside of the process chamber 60. The exhaust unit 200 may include exhaust lines 201, 202 and a pressure relief member 210. The exhaust lines 201, 202 play a passage function for the plasma and/or reaction byproducts retained in the processing space 111 to be discharged to the outside of the process chamber 60. The exhaust lines 201, 202 may be connected to the exhaust holes 112 formed on the bottom surface of the outer shell 110. The exhaust line 202 may be connected to the pressure relief member 210 that provides negative pressure.

The pressure relief member 210 can provide negative pressure to the processing space 111. The pressure relief member 210 can discharge the plasma, impurities or particles remaining in the processing space 111 to the outside of the housing 110. In addition, the pressure relief member 210 can provide negative pressure so as to keep the pressure of the processing space 111 at a preset pressure. The pressure relief member 210 can be a pump. However, it is not limited thereto, and the pressure relief member 210 can be variously transformed into a known device for providing negative pressure.

The plasma generating unit 300 may be located at the upper portion of the process unit 100. In addition, the plasma generating unit 300 may be located at the upper portion of the housing 110. According to one example, the plasma generating unit 300 may be separated from the process unit 100. In this case, the plasma generating unit 300 may be disposed outside the process unit 100. The plasma generating unit 300 generates plasma from a process gas supplied from a process gas supply pipe 320 described later and supplies it to the processing space 111.

The plasma generating unit 300 may include a plasma chamber 310 , a process gas supply pipe 320 , and a plasma source 330 .

A discharge space 311 is formed inside the plasma chamber 310. The plasma chamber 310 may have a shape with an upper and lower surface open. As an example, the plasma chamber 310 may have a cylindrical shape with an upper and lower surface open. The plasma chamber 310 may be made of a material including quartz.

The upper end of the plasma chamber 310 may be sealed by a gas supply port 315. The gas supply port 315 is connected to a process gas supply pipe 320. The process gas may be a reaction gas for generating plasma. As an example, the reaction gas may include difluoromethane (CH ₂ F ₂ ), nitrogen (N ₂ ) and oxygen (O ₂ ). Alternatively, the reaction gas may further include different types of gases such as carbon tetrafluoride (CF ₄ ), fluorine, and hydrogen.

The process gas is supplied to the discharge space 311 through the gas supply port 315. The process gas supplied to the discharge space 311 can be uniformly distributed to the processing space 111 through the inflow space 341 and the baffle hole 131 of the induction unit described later.

The plasma source 330 excites the process gas supplied to the discharge space 311 to generate plasma. The plasma source 330 connects high-frequency power to the discharge space 311 to excite the process gas supplied to the discharge space 311. The plasma source 330 may include an antenna 331 and a power source 332.

The antenna 331 may be an inductively coupled plasma (ICP) antenna. The antenna 331 may be provided in a coil shape. The antenna 331 may wrap around the plasma chamber 310 multiple times outside the plasma chamber 310. As an example, the antenna 331 may wrap around the plasma chamber 310 multiple times in a spiral shape outside the plasma chamber 310.

The antenna 331 may wrap around the plasma chamber 310 in a region corresponding to the discharge space 311. One end of the antenna 331 may be arranged at a height corresponding to the upper region of the plasma chamber 310 when viewed from the top of the plasma chamber 310. The other end of the antenna 331 may be arranged at a height corresponding to the lower region of the plasma chamber 310 when viewed from the top of the plasma chamber 310. One end of the antenna 331 may be connected to the power source 332, and the other end of the antenna 331 may be grounded. However, the present invention is not limited thereto, and one end of the antenna 331 may be grounded, and the other end of the antenna 331 may be connected to the power source 332.

The antenna 331 and the plasma chamber 310 may be provided in a module surrounded by a first plate 314, a second plate 312, and a third plate 313. The first plate 314 may be provided at the lower end of the plasma chamber 310, and the second plate 312 may be provided at the upper end of the plasma chamber 310. The first plate 314 may be provided to span the lower end of the plasma chamber 310. The first plate 314 and the plasma chamber 310 may be provided perpendicularly to each other. The second plate 312 may be provided to span the upper end of the plasma chamber 310. The second plate 312 and the plasma chamber 310 may be provided perpendicularly to each other. The third plate 313 may be provided to connect the first plate 314 and the second plate 312 to each other. The third plate 313 may constitute a side of the module.

The first plate 314, the second plate 312, and the third plate 313 may be made of a metal material. As an example, the first plate 314, the second plate 312, and the third plate 313 may be made of an aluminum material.

The power source 332 can connect power to the antenna 331. The power source 332 can connect high-frequency current to the antenna 331. The high-frequency current connected to the antenna 331 can form an induced electric field in the discharge space 311. The process gas supplied to the discharge space 311 can obtain energy required for ionization from the induced electric field to be converted into a plasma state.

In the above-mentioned embodiment of the present invention, the antenna 331 and the plasma chamber 310 are provided as a module as an example, but the invention is not limited thereto. As an example, the antenna 331 may not be modularized with the plasma chamber 310, but may be wrapped around the plasma chamber 310 for a plurality of turns outside the plasma chamber 310.

The induction unit 340 is located between the plasma chamber 310 and the outer shell 110. The induction unit 340 seals the open upper surface of the outer shell 110. An inflow space 341 for diffusing the plasma generated in the discharge space 311 is provided inside the induction unit 340. The inflow space 341 connects the processing space 111 and the discharge space 311, and plays a passage function for supplying the plasma generated in the discharge space 311 to the processing space 111. The induction unit 340 can be formed roughly in an inverted funnel shape. The induction unit 340 can have a shape in which the diameter increases from the upper end to the lower end. The inner circumferential surface of the induction unit 340 can be formed of a non-conductor. The lower end of the induction unit 340 can be used for the outer shell 110 and the baffle 130 to be combined.

The induction unit 340 may be connected to the lower end of the plasma chamber 310 . The upper end of the induction unit 340 and the lower end of the plasma chamber 310 may be connected. An upper flange 346 for the plasma chamber to be placed is provided at the upper end of the induction unit 340 . The upper flange 346 is connected to the lower end of the plasma chamber 310 .

The sealing member 400 is provided at the connection portion between the induction unit 340 and the plasma chamber 310. The sealing member 400 seals the induction unit 340 and the plasma chamber 310.

Figure 5 is a three-dimensional view briefly showing the sealing component and the upper flange of Figure 4, Figure 6 is an enlarged view of the main part of the sealing component shown in Figure 5, Figure 7 is a truncated three-dimensional view of the sealing cover of Figure 5, Figure 8 is a cross-sectional view of the sealing cover of Figure 5, Figure 9 is a view used to describe the additional structure of the sealing cover, and Figure 10 is a view showing the additional space within the sealing component.

5 to 10, the upper flange and the sealing member of an embodiment of the present invention will be described in detail.

5 , the sealing member 400 may include a seal 410 , a seal flange 420 , and a seal shield 430 .

The seal 410 may be made of a flexible material or in the form of an O-ring having a circular cross section.

The seal flange 420 may be fixed to the upper flange 346 of the induction unit 340 to support the seal 410. The seal flange 420 coupled to the upper flange 346 provides a sealing space on the inner side, and the seal 410 is located in the sealing space. The seal 410 is pressed against the inclined inner side surface of the seal flange 420 and compressed, while being closely attached to the outer side surface 319 of the plasma chamber 310 and the upper surface 347 of the upper flange 346. At this time, while the seal 410 is compressed in the sealing space, a triangular-shaped additional space 428 is formed (refer to FIG. 10 ). The seal shield 430 is provided in the additional space 428.

On the other hand, a cooling line 440 is provided on the seal flange 420. Refrigerant flows in the cooling line 440, and the seal 410 can be cooled by the seal flange 420.

The seal shield 430 blocks the seal 410 from being directly exposed to the plasma flowing out to the outside through the gap G between the plasma chamber 310 and the upper flange 346. The seal shield 430 has a cross-sectional shape having a vertex 431 intersected by two sides 432 and 433. The vertex 431 of the seal shield 430 may be located in the additional space 428 so as to face the gap G. That is, the seal shield 430 blocks the plasma intruding into the additional space 428 through the gap G, thereby minimizing the corrosion (damage) of the seal 410 by the plasma. The seal shield may be provided with a material having strong corrosion resistance to plasma. As an example, the seal boot may be provided in PTFE (Polytetrafluroethylene) material.

7 and 9 , the seal shield 430 is formed in a triangular shape in cross section. The opposite side 434 facing the vertex toward the gap G may be a straight line. The first side 432 of the seal shield contacts the upper surface 347 of the upper flange 346, and the second side 433 contacts the outer side surface 319 of the plasma chamber 310. Moreover, the vertex is disposed adjacent to the gap G.

11 to 16 are diagrams showing various modifications of the seal boot.

The embodiments described below are similarly configured in the aforementioned apparatus for processing substrates except for the seal shield. To avoid duplication of content, the description of the repeated configuration is omitted below.

As shown in FIG. 11 , the seal shield 430 a of the first modification may be configured in a cross-sectional shape in which the first side 432 a is wider than the second side 433 a .

In addition, as shown in FIG. 12 , the seal shield 430 b of the second modification may be configured in a cross-sectional shape in which the second side 433 b is wider than the first side 432 b.

13 and 14 are diagrams showing a third modification of the seal boot.

As shown in Figures 13 and 14, the seal shield 430c of the third variant can be configured to be concave in the opposite side 434c facing the apex 431c. At this time, the concave opposite side 434c can contact the seal 410.

15 and 16 are diagrams showing a fourth modification of the seal boot.

As shown in Figures 15 and 16, the seal shield 430d of the fourth modification can be configured to have a protruding shape of the opposite side 434d facing the apex 431d. At this time, while the protruding opposite side 434d contacts and is pressurized with the seal 410, the apex 431d can further adhere to the gap G.

According to the above-mentioned embodiment of the present invention, the sealing cover is arranged in the additional space to minimize the free space in the additional space and block the gap for the first time, thereby minimizing the inflow of high-temperature plasma and/or process gas invading through the gap and minimizing the damage to the sealing caused by the high-temperature plasma and/or process gas flowing into the additional space.

According to the above-mentioned embodiment of the present invention, the seal shield which is exposed to plasma and the like at a relatively high frequency is made of a material with strong corrosion resistance, thereby minimizing the corrosion of the seal by high-temperature plasma and/or process gas that penetrates through the gap.

The above detailed description is an example of the present invention. In addition, the above content shows and describes the preferred implementation form of the present invention, and the present invention can be used in a variety of other combinations, changes and environments. That is, changes or revisions can be made within the conceptual scope of the invention disclosed in this specification, the scope equal to the above disclosure, and/or the technical or knowledge scope of the industry. The above embodiments describe the optimal state required to embody the technical ideas of the present invention, and various changes required by the specific application fields and uses of the present invention can also be made. Therefore, the above invention content is not intended to limit the present invention to the disclosed implementation forms. In addition, the accompanying patent application scope should be interpreted as also including other implementation forms.

6: Support part 10: Loading port 11: First direction 12: Second direction 20: Equipment front end module 21: Transfer frame 25: First transfer robot 27: Transfer track 30: Processing module 40: Loading gate chamber 50: Transfer chamber 53: Second transfer robot 60: Processing chamber 100: Processing unit 110: Housing 111: Processing space 112: Exhaust hole 120: Support unit 121: Support plate 122: Support shaft 130: Baffle 131: Baffle hole 140: Exhaust baffle 141: Exhaust hole 200: Exhaust unit 201: Exhaust pipeline 202: Exhaust pipeline 210: Pressure relief member 300: Plasma generating unit 310: Plasma chamber 311: Discharge space 312: Second plate 313: Third plate 314: First plate 315: Gas supply port 319: External surface 320: Process gas supply pipe 330: Plasma source 331: Antenna 332: Power supply 340: Induction unit 341: Inflow space 346: Upper flange 347: Upper side 400: Sealing member 410: Sealing element 420: Sealing element flange 428: Additional space 430: Sealing element shield 430a: Seal shield 430b: Seal shield 430c: Seal shield 430d: Seal shield 431: Vertex 431c: Vertex 431d: Vertex 432: Side 432a: First side 432b: First side 433: Side 433a: Second side 433b: Second side 434: Opposite side 434c: Opposite side 434d: Opposite side 440: Cooling line 1000: Plasma source 2000: Chamber 3000: O-ring G: Gap W: Substrate

FIG. 1 is a diagram showing a plasma source and a portion of a process chamber in an apparatus for processing a substrate using plasma. FIG. 2 is an enlarged view showing a connection portion between the plasma source and the process chamber. FIG. 3 is a diagram briefly showing an apparatus for processing a substrate according to an embodiment of the present invention. FIG. 4 is a diagram briefly showing an embodiment of a process chamber for performing a plasma processing step in a process chamber of the apparatus for processing a substrate in FIG. 3. FIG. 5 is a perspective view briefly showing a sealing member and an upper flange of FIG. 4. FIG. 6 is an enlarged view showing a main portion of the sealing member shown in FIG. 5. FIG. 7 is a truncated perspective view of a sealing member shield of FIG. 5. FIG. 8 is a cross-sectional view of a sealing member shield of FIG. 5. FIG. 9 is a diagram for describing an additional structure of a sealing member shield. FIG. 10 is a diagram showing an additional space in a sealing member. FIGS. 11 to 16 are diagrams showing various variations of the sealing member shield.

1000: Plasma source unit

2000: Chamber

3000:O-ring

Claims (17)

A device for processing a substrate, the device for processing a substrate comprising: an outer shell, the outer shell provides a processing space inside; a plasma generating unit, the plasma generating unit generates plasma from a process gas; an induction unit, the induction unit is located between the plasma generating unit and the outer shell, and provides a passage for supplying the plasma to the processing space; and a sealing member, the sealing member provides a connection portion for sealing the plasma generating unit and the induction unit, wherein the sealing member comprises: a seal; a seal flange, the seal flange supports the seal; and a seal shield, the seal shield blocks the seal from being directly exposed to the plasma flowing out through the gap of the connection portion. An apparatus for processing a substrate as described in claim 1, wherein the sealing shield has a cross-sectional shape having a vertex intersected by two edges, and the vertex is configured to face the gap. An apparatus for processing a substrate as described in claim 1, wherein the sealing shield is formed in a triangular shape in its cross-sectional shape and is configured so that any vertex faces the gap. An apparatus for processing a substrate as described in claim 2, wherein the opposite side of the sealing cover facing the apex is recessed. An apparatus for processing a substrate as described in claim 1, wherein the seal shield is made of a material having a higher corrosion resistance to plasma than the seal. An apparatus for processing a substrate as described in claim 1, wherein the seal flange includes a cooling line for flowing a refrigerant to reduce the temperature of the seal. An apparatus for processing a substrate as described in any one of claims 1 to 6, wherein the sealing shield is configured in a ring shape. An apparatus for processing a substrate as described in claim 1, wherein the seal shield has a cross-sectional shape corresponding to an additional space that occurs while the seal is compressed in the seal groove of the seal flange. A device for processing a substrate, the device for processing a substrate comprising a sealing member, the sealing member sealing a gap between a first member and a second member in contact with the first member, wherein the sealing member comprises: a sealing member flange, the sealing member flange having a sealing groove and fixed to the second member; a sealing member, the sealing member being arranged in the sealing groove and compressed by the sealing member flange; and a sealing member shield, the sealing member shield preventing the sealing member from being directly exposed to plasma flowing out through the gap. An apparatus for processing a substrate as described in claim 9, wherein the seal shield has a cross-sectional shape corresponding to an additional space that occurs while the seal is compressed in the seal groove of the seal flange. An apparatus for processing a substrate as described in claim 9, wherein the sealing shield has a cross-sectional shape having a vertex intersected by two edges, and the vertex is configured to face the gap. An apparatus for processing a substrate as described in claim 9, wherein the sealing shield is formed in a triangular shape in its cross-sectional shape and is configured so that any vertex faces the gap. An apparatus for processing a substrate as described in claim 12, wherein the opposite side of the sealing cover facing the apex is recessed. An apparatus for processing a substrate as described in claim 12, wherein the opposite side of the sealing cover facing the apex is configured to protrude, and the opposite side is in contact with the sealing member. An apparatus for processing a substrate as described in claim 9, wherein the seal shield is made of a material having a higher corrosion resistance to plasma than the seal. An apparatus for processing a substrate as described in claim 9, wherein the seal flange includes a cooling line for flowing a refrigerant to reduce the temperature of the seal. An apparatus for processing a substrate as described in any one of claims 9 to 16, wherein the sealing shield is configured in a ring shape.

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