TW202404118A - Semiconductor optoelectronic device - Google Patents

Abstract

A semiconductor optoelectronic device includes a substrate, an optoelectronic element, an adhesive layer and a first light-filtering layer. The substrate includes a first surface and a second surface. The optoelectronic element is disposed on the second surface and has a light-adhesive layer and a first sidewall. The adhesive layer is disposed between the substrate and the optoelectronic element and has a second sidewall, wherein the second is substantially conformal with the first sidewall. The first light-filtering layer is disposed on either the first surface or the second surface.

Description

Optoelectronic semiconductor components

The present invention relates to a semiconductor component, and in particular to an optoelectronic semiconductor component.

Optoelectronic semiconductor components, taking Vertical Photo-Diode (V-PD) as an example, use the interaction of photons and electrons, such as exciting radiation, absorption and other mechanisms to convert light/electrical signals. element. It has been widely used in electronic mobile devices such as mobile phones, tablets or laptops. It is even used in daily life such as cars and LCD TVs. It can identify the luminosity of the surrounding environment to control the light source of the display of the electronic mobile device, thereby adjusting the screen brightness, so that the user can view the display screen more clearly and brightly, and obtain a more beautiful picture quality.

However, existing vertical photodetection diodes require electrodes to be disposed through wire bonding to derive signal carriers. Since the wiring space cannot be effectively compressed, the effective area of the epitaxial layer on the light-collecting surface will be reduced, resulting in less than ideal signal strength and further limiting the application of vertical light detection diodes in electronic mobile devices.

Therefore, there is a need to provide an advanced optoelectronic semiconductor component to solve the problems faced by the conventional technology.

Embodiments of this specification disclose an optoelectronic semiconductor element, including: a substrate, an optoelectronic semiconductor unit, an adhesive layer, a first filter, and a first filter layer. The substrate has a first side and a second side. The optoelectronic semiconductor unit is located on the second surface and has a light absorbing layer and a first side wall. The adhesive layer is located between the substrate and the semiconductor unit and has a second side wall, and the second side wall is substantially flush with the first side wall. The first filter layer is located on one of the first side and the second side.

This specification provides an optoelectronic semiconductor element that can increase the effective area of the light-collecting surface of the epitaxial stack of the optoelectronic semiconductor element. In order to make the above-mentioned embodiments and other objects, features and advantages of this specification more clearly understandable, a plurality of preferred embodiments are enumerated below and described in detail with reference to the accompanying drawings.

However, it must be noted that these specific implementation examples and methods are not intended to limit the present invention. The invention may still be implemented using other features, components, methods and parameters. The preferred embodiments are proposed only to illustrate the technical features of the present invention and are not intended to limit the patentable scope of the present invention. Those with ordinary knowledge in this technical field will be able to make equal modifications and changes based on the description of the following description without departing from the spirit and scope of the present invention. In different embodiments and drawings, the same components will be represented by the same component symbols.

Figure 1 is a schematic cross-sectional structural diagram of an optoelectronic semiconductor device 100 according to an embodiment of this specification. In some embodiments of the present specification, the optoelectronic semiconductor device 100 may be a light detecting diode device. In this embodiment, the optoelectronic semiconductor device 100 is preferably a flip-chip photodetection diode device. The optoelectronic semiconductor element 100 includes: a substrate 101, an optoelectronic semiconductor unit 102, an adhesive layer 103 and a first filter layer 104.

In some embodiments, the substrate 101 is a carrier substrate and includes silicon, glass or sapphire. In other embodiments of this specification, the substrate 101 may also include a polymer material, such as polyimide (PI), polyethylene naphthalate two formic glycol ester (PEN) or Polyethylene terephthalate (PET).

In one embodiment, a material with a high light transmittance in the wavelength range of 350 nanometers to 1800 nanometers can be used to make the substrate 101 to reduce the light absorption of the substrate 101 and increase the light absorption efficiency of the optoelectronic semiconductor element 100. 101. In this embodiment, the substrate 101 is a glass substrate. The base 101 has a first surface 101a and a second surface 101b. The second surface 101b is located on the opposite side of the first surface 101a; the first surface 101a and the second surface 101b are parallel; and both are flat surfaces.

The optoelectronic semiconductor unit 102 is located on the second side 101 b of the substrate 101 . In some embodiments of this specification, the optoelectronic semiconductor unit 102 has a semiconductor stack 102b, a first electrode 102c, and a second electrode 102d. The semiconductor stack 102b includes a light absorbing layer 102b1, a first conductive semiconductor layer 102b2, and a second conductive semiconductor layer 102b3. The light absorbing layer 102b1 is located between the first conductive semiconductor layer 102b2 and the second conductive semiconductor layer 102b3. The first electrode 102c is located on the second conductive semiconductor layer 102b3 and is electrically connected to the first conductive semiconductor layer 102b1. The second electrode 102d is located on the second conductive semiconductor layer 102b3 and is electrically connected to the second conductive semiconductor layer 102b3.

In some embodiments of the present description, the optoelectronic semiconductor unit 102 may include a quantum well structure, a single heterostructure, or a double heterostructure. The first conductive semiconductor layer 102b2, the second conductive semiconductor layer 102b3 and the light absorbing layer 102b1 may include III-V group compound semiconductors, such as GaAs, InP, InGaAs, AlGaAs, AlGaInAs, GaP, InGaP, AlInP, AlGaInP, GaN, InGaN , AlGaN, AlGaInN, AlAsSb, InGaAsP, InGaAsN or AlGaAsP. In an embodiment, the first conductive semiconductor layer 102b2 may be n-type, and the second conductive semiconductor layer 102b3 may be p-type, or the first conductive semiconductor layer 102b2 may be p-type, and the second conductive semiconductor layer 102b3 may be p-type. Can be n type. The light absorbing layer 102b1 may be i-type. The light-absorbing layer 102b1 is a region used by the optoelectronic semiconductor element 100 to absorb light, and the wavelength range of the light to be absorbed is determined according to the material (or band gap) of the light-absorbing layer 102b1. In other words, the light-absorbing layer 102b1 can absorb energy greater than The energy gap of the light. The energy gap of the light-absorbing layer 102b1 can be designed to be between 0.72ev and 1.77ev (the corresponding wavelengths are infrared light between 700 nm and 1700 nm), between 1.77ev and 2.03ev (the corresponding wavelengths are infrared light between 700 nm and 1700 nm). The wavelength is red light between 610 nm and 700 nm), between 2.1ev and 2.175ev (the corresponding wavelength is yellow light between 570 nm and 590 nm), between 2.137ev and 2.48ev (The corresponding wavelength is green light between 500 nm and 580 nm), between 2.53ev and 3.1ev (the corresponding wavelength is blue light or deep blue light between 400 nm and 490 nm), or It is between 3.1ev and 4.96ev (its corresponding wavelength is ultraviolet light between 250 nm and 400 nm).

The first filter layer 104 is located between the substrate 101 and the optoelectronic semiconductor unit 102. In some embodiments of this specification, the first filter layer 104 may be a type that divides the incident light L into multiple light waves using multiple interfaces based on the principle of optical interference, and then uses the mutual interference of the light waves to cause the spectrum to change in space. redistribution to filter out part of the light. In this embodiment, the first filter layer 104 may be a distributed Bragg reflector (DBR) layer. The incident light L passes through the substrate 101 from the first surface 101a of the substrate 101 and is incident on the first filter layer 104 .

In one embodiment, the absorbing layer 102b1 absorbs the first waveband, and the first filter layer 104 can filter out the second waveband, where the first waveband is different from the second waveband. In one embodiment, the first waveband is larger than the second waveband. The first waveband and the second waveband may be a single wavelength or a range of wavelengths. For example, the first wave band is 1050 nanometers or 580 nanometers to 1050 nanometers, and the second wave band is 400 nanometers or 250 nanometers to 400 nanometers. In other words, the first filter layer 104 may allow incident light having a wavelength larger than the second band to pass.

In one embodiment, the adhesive layer 103 has a transmittance of 95% for the third waveband and the third waveband is a single wavelength. The first filter layer 104 can filter light less than or equal to the third waveband. For example, the adhesive layer 103 has a transmittance of 95% at 400 nanometers (the third wave band), the first filter layer 104 can filter out light less than or equal to 400 nanometers, and can pass light greater than 400 nanometers. The first filter layer 104 reaches the absorbing layer 102b1 and is absorbed by the absorbing layer 102b1. The first band is larger than the third band.

The adhesive layer 103 is located between the substrate 101 and the optoelectronic semiconductor unit 102 to adhere the optoelectronic semiconductor unit 102 to the substrate 101 . In detail, the adhesive layer 103 of the base 101 is located between the first filter layer 104 and the optoelectronic semiconductor unit 102 .

In this embodiment, the first conductive semiconductor layer 102b2 has a first sidewall 102e, the adhesive layer 103 has a second sidewall 103a, and the filter layer 104 has a third sidewall 104a. The first side wall 102 and the second side wall 103a are substantially coplanar. The second side wall 103a and the third side wall 104a are substantially flush.

The substrate 101, the first filter layer 104 and the adhesive layer 103 have a first refractive index, a second refractive index and a third refractive index respectively; and the first refractive index is less than the second refractive index; the second refractive index is less than the third refractive index. refractive index. The first conductive semiconductor layer 102b2 has a fourth refractive index and the third refractive index of the adhesive layer 103 is smaller than the fourth refractive index. Through the design of gradually increasing refractive index of the base 101, the first filter layer 104, the adhesive layer 103 and the first conductive semiconductor layer 102b2, the light absorption rate of the optoelectronic semiconductor unit 102 can be improved.

In other embodiments, the refractive indexes of the substrate 101, the first filter layer 104, the adhesive layer 103 and the first conductive semiconductor layer 102b2 can respectively present gradient distributions, so that the substrate 101, the first filter layer 104. The refractive index of the adhesive layer 103 and the first conductive semiconductor layer 102b2 increases along the stacking direction D1.

In this embodiment, the adhesive layer 103 may include polymers of hydrocarbons, halides, carboxylates, hydroxylates and amides of benzene rings, or combinations thereof. The first filter layer 104 can filter out high-energy light waves (eg, ultraviolet light) with a wavelength range less than 400 nanometers in the incident light L, and therefore can protect the adhesive layer 103 from deterioration due to exposure to high-energy light waves. The material of the first filter layer 104 may include magnesium fluoride (MgFx), silicon dioxide (SiOx), silicon nitride (SiNx), titanium dioxide (TiOx), aluminum oxide (AlOx), niobium oxide (NbOx) or any of the above. combination.

In this embodiment, the optoelectronic semiconductor unit 102 further includes an insulating layer 102a covering the side portion 102s1 and the top portion 102s2 of the semiconductor stack 102b. The side portion 102s1 of the semiconductor stack 102b includes the light-absorbing layer 102b1, the first conductive semiconductor layer 102b2, and the second conductive semiconductor layer 102b3, which are substantially parallel to the stacking direction D1. Top 102s2 of semiconductor stack 102b includes the top surface of second conductive semiconductor layer 102b3. The first electrode 102c located above the second conductive semiconductor layer 102b3 extends downward along the insulating layer 102a covering the side portion 102s1 of the semiconductor stack 102b, and passes through the insulating layer 102a to connect with the first conductive semiconductor layer 102b2. Electrical contact. The second electrode 102d located on the second conductive semiconductor layer 102b3 passes through the insulating layer 102a covering the top 102s2 of the semiconductor stack 102b and is in physical contact with the second conductive semiconductor layer 102b3.

The optoelectronic semiconductor unit 102 optionally further includes an intermediate layer 102f. In this embodiment, the intermediate layer 102f is located between the first conductive semiconductor layer 102b2 and the adhesive layer 103. The intermediate layer 102f is embedded in the adhesive layer 103. In other words, the adhesive layer 103 covers the side 102f1 of the intermediate layer 102f; after the first electrode 102c passes through the insulating layer 102a, it can then pass through the first electrical semiconductor layer 102b2 and the middle layer 102f. Layer 102f contacts. The intermediate layer 102f can reduce the contact resistance between the first electrode 102c and the first conductive semiconductor layer 102b2.

In this embodiment, the first electrode 102c and the second electrode 102d are disposed on the same side (upper side) of the epitaxial stack. Through this design, the packaging volume of the optoelectronic semiconductor unit 102 can be reduced and the epitaxial stack 102b can be increased. The effective area on the light receiving surface thereby increases the signal intensity of the light sensing current of the optoelectronic semiconductor unit 102. Furthermore, by transferring the optoelectronic semiconductor unit 102 from the original growth substrate (not shown) to another carrying substrate (i.e., the substrate 101) through the adhesive layer 103, the characteristics of the optoelectronic semiconductor unit 102 can be increased (for example, increasing light transmittance). or thermal conductivity). In addition, the use of the first filter layer 104 to filter high-energy light waves and avoid the deterioration of the adhesive layer 103 can further increase the service life of the optoelectronic semiconductor element 100.

Figure 2 is a schematic cross-sectional structural diagram of an optoelectronic semiconductor device 200 according to another embodiment of this specification. The structure of the optoelectronic semiconductor element 200 is generally similar to the optoelectronic semiconductor element 100 shown in Figure 1 . The difference is that in this embodiment, the first filter layer 204 of the optoelectronic semiconductor element 200 is disposed on the first surface 101 a of the substrate 101 , instead of being disposed on the second surface 101b of the substrate 101; and the second refractive index of the first filter layer 204 is smaller than the first refractive index of the substrate 101. In this embodiment, the optoelectronic semiconductor device 200 does not include an intermediate layer and the first electrode 102c is in direct contact with the first conductive semiconductor layer 102b2.

In some embodiments of this specification, the refractive indexes of the first filter layer 204, the substrate 101, the adhesive layer 103 and the first conductive semiconductor layer 102b2 can respectively present gradient distributions, so that the first filter layer 204, the substrate 101, the refractive index of the adhesive layer 103 and the first electrical semiconductor layer 102b2 increases along the stacking direction D1.

Figure 3 is a schematic cross-sectional structural diagram of an optoelectronic semiconductor element 300 according to another embodiment of this specification. The structure of the optoelectronic semiconductor element 300 is generally similar to the optoelectronic semiconductor element 100 shown in Figure 1 . The difference is that in this embodiment, the optoelectronic semiconductor element 300 further includes a second filter layer 304 located on the first surface of the substrate 101 101a on.

The second filter layer 304 has a fifth refractive index, and the fifth refractive index is smaller than the first refractive index of the substrate 101 . In this embodiment, the second filter layer 304 may also be a Bragg reflective layer. The first filter layer 104 located on the second surface 101b of the substrate 101 can filter out light waves (not shown) in a part of the wavelength range of the incident light L; and the second filter layer 104 located on the first surface 101a of the substrate 101 The filter layer 304 can filter out another part of the light waves (not shown) in the incident light L that has a different wavelength range.

Figure 4 is a schematic cross-sectional structural diagram of an optoelectronic semiconductor element 400 according to yet another embodiment of this specification. The structure of the optoelectronic semiconductor device 400 is generally similar to the optoelectronic semiconductor device 100 shown in FIG. 1 . The difference is that the substrate 401 has at least one optical structure 401 p located on the first surface 401 a of the substrate 401 .

In this embodiment, the optical structure 401p may include a plurality of protrusions or recesses to reduce total reflection between the incident light L/glass substrate 401. The protruding portion or the recessed portion can be formed on the first surface 401a of the substrate 401 that is in contact with the incident light L through surface roughening technology. In some embodiments of this specification, the optical structure 401p may be a microlens array structure, whereby incident light from different directions can be incident into the optoelectronic semiconductor unit 102 in parallel. In one embodiment, the optical structure 401p may include an anti-reflective layer (not shown). In other embodiments, the second surface 401b of the substrate 401 facing the optoelectronic semiconductor unit 102 may also have a similar optical structure (not shown).

Although the present invention has been disclosed above in terms of preferred embodiments, they are not intended to limit the present invention. Anyone with ordinary knowledge in the technical field may make some modifications and modifications without departing from the spirit and scope of the present invention. , therefore, the protection scope of the present invention shall be subject to the scope of the appended patent application.

100: Optoelectronic semiconductor components 101: Base 101a: Side 1 101b: Second side 102: Optoelectronic semiconductor unit 102a: Insulation layer 102b: Semiconductor stack 102b1:Light absorbing layer 102b2: First conductive semiconductor layer 102b3: Second conductive semiconductor layer 102c: first electrode 102d: Second electrode 102e: first side wall 102f: middle layer 102f1: Side 102s1: Side 102s2:Top 103:Adhesive layer 103a: Second side wall 104: First filter layer 104a:Third side wall 200: Optoelectronic semiconductor components 204: First filter layer 300: Optoelectronic semiconductor components 304: Second filter layer 400: Optoelectronic semiconductor components 401:Substrate 401p: Optical structure 401a: First side

In order to have a better understanding of the above and other aspects of this specification, examples are given below and are described in detail with the accompanying drawings: Figure 1 is a schematic cross-sectional structural diagram of an optoelectronic semiconductor element according to an embodiment of this specification; Figure 2 is a schematic cross-sectional structural diagram of an optoelectronic semiconductor element according to another embodiment of this specification; Figure 3 is a schematic cross-sectional structural diagram of an optoelectronic semiconductor element according to another embodiment of this specification; and Figure 4 is a schematic cross-sectional structural diagram of an optoelectronic semiconductor element according to yet another embodiment of this specification.

without

100: Optoelectronic semiconductor components

101: Base

101a: Side 1

101b: Second side

102: Optoelectronic semiconductor unit

102a: Insulation layer

102b: Semiconductor stack

102b1:Light absorbing layer

102b2: First conductive semiconductor layer

102b3: Second conductive semiconductor layer

102c: first electrode

102d: Second electrode

102e: first side wall

102f: middle layer

102f1: Side

102s1: Side

102s2:Top

103:Adhesive layer

103a: Second side wall

104: First filter layer

104a:Third side wall

Claims (10)

An optoelectronic semiconductor component, including: a substrate having a first side and a second side; An optoelectronic semiconductor unit is located on the second surface and has a light-absorbing layer and a first side wall; An adhesive layer is located between the substrate and the semiconductor unit and has a second side wall that is substantially flush with the first side wall; and A first filter layer is located on one of the first side and the second side. The optoelectronic semiconductor component as claimed in claim 1, wherein the first filter layer is located between the adhesive layer and the second surface. The optoelectronic semiconductor component of claim 2, wherein the adhesive layer includes cyclobutene (BCB), and the first filter layer can filter incident light with a wavelength less than 400 nanometers. The optoelectronic semiconductor element according to claim 3, wherein the substrate has a first refractive index; the first filter layer has a second refractive index; the adhesive layer has a third refractive index; the first refractive index is less than the second refractive index; and the second refractive index is smaller than the third refractive index. The optoelectronic semiconductor device according to claim 4 further includes a second filter layer located on the first surface. The optoelectronic semiconductor device according to claim 5, wherein the second filter layer has a fourth refractive index smaller than that of the substrate. The optoelectronic semiconductor device as claimed in claim 5, wherein the incident light has a wavelength range substantially between 350 nanometers and 1800 nanometers. The optoelectronic semiconductor element as claimed in claim 7, wherein the first filter layer filters a part of the incident light; and the second filter layer filters another part of the incident light with a different wavelength range. The optoelectronic semiconductor device as claimed in claim 1, wherein the substrate includes glass or sapphire. The optoelectronic semiconductor device as claimed in claim 1, wherein the substrate has an optical structure located on the first surface.

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