TW202404057A - Photosensitive device substrate and manufacturing method thereof - Google Patents
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Abstract
Description
本發明是有關於一種基板及其製造方法,且特別是有關於一種感光元件基板及其製造方法。The present invention relates to a substrate and a manufacturing method thereof, and in particular, to a photosensitive element substrate and a manufacturing method thereof.
感光元件的應用相當廣泛,較常見的有應用於手機、平板電腦或筆記型電腦等電子裝置中的影像感測器。除此之外,用於安檢、工業檢測或醫療診察的非可見光(例如X光)感測器,因其高附加價值而成為相關製造商的重點開發項目。Photosensitive elements are widely used, and the most common ones are image sensors used in electronic devices such as mobile phones, tablets, and notebook computers. In addition, non-visible light (such as X-ray) sensors used for security inspection, industrial inspection or medical diagnosis have become key development projects of relevant manufacturers due to their high added value.
用於X光攝影的感光元件基板通常會在基板的一側設置感光元件層及閃爍體層以感測X光訊號。若是感光元件基板具有軟性基板,在其製造過程中,通常會先將柔性結構及感光元件層形成於載板上之後,再將柔性結構及感光元件層自載板剝離並貼附於軟性基板上。在剝離的過程中往往容易造成感光元件的損傷,也會導致影像有不均勻(Mura)的問題。Photosensitive element substrates used for X-ray photography usually have a photosensitive element layer and a scintillator layer on one side of the substrate to sense X-ray signals. If the photosensitive element substrate has a flexible substrate, during its manufacturing process, the flexible structure and photosensitive element layer are usually formed on the carrier board, and then the flexible structure and photosensitive element layer are peeled off from the carrier board and attached to the flexible substrate. . During the peeling process, it is often easy to cause damage to the photosensitive element, which can also lead to image unevenness (Mura).
本發明提供一種感光元件基板及其製造方法,可提升感光元件基板的機械強度並提升影像的品質。The present invention provides a photosensitive element substrate and a manufacturing method thereof, which can improve the mechanical strength of the photosensitive element substrate and improve image quality.
本發明的感光元件基板的製造方法包括以下步驟。提供載板,形成第一樹脂層於載板之上,形成第一阻障層於第一樹脂層上。然後,形成金屬層於第一阻障層上,其中金屬層的厚度在130 Å至4000 Å之間。形成第二樹脂層於金屬層上,形成第二阻障層於第二樹脂層上。形成電子元件層於第二阻障層上,其中電子元件層包括薄膜電晶體以及感光二極體。The manufacturing method of the photosensitive element substrate of the present invention includes the following steps. A carrier is provided, a first resin layer is formed on the carrier, and a first barrier layer is formed on the first resin layer. Then, a metal layer is formed on the first barrier layer, wherein the thickness of the metal layer is between 130 Å and 4000 Å. A second resin layer is formed on the metal layer, and a second barrier layer is formed on the second resin layer. An electronic component layer is formed on the second barrier layer, wherein the electronic component layer includes a thin film transistor and a photosensitive diode.
本發明的感光元件基板包括第一柔性結構、金屬層、第二柔性結構以及電子元件層。第一柔性結構包括第一樹脂層以及設置於第一樹脂層上的第一阻障層。金屬層設置於第一阻障層上。第二柔性結構包括設置於金屬層上的第二樹脂層以及設置於第二樹脂層上的第二阻障層,其中金屬層設置於第一阻障層與第二樹脂層之間,金屬層的厚度在130 Å至4000 Å之間。電子元件層設置於第二柔性結構上,其中電子元件層包括薄膜電晶體以及感光二極體。The photosensitive element substrate of the present invention includes a first flexible structure, a metal layer, a second flexible structure and an electronic element layer. The first flexible structure includes a first resin layer and a first barrier layer disposed on the first resin layer. The metal layer is disposed on the first barrier layer. The second flexible structure includes a second resin layer disposed on the metal layer and a second barrier layer disposed on the second resin layer, wherein the metal layer is disposed between the first barrier layer and the second resin layer, and the metal layer The thickness ranges from 130 Å to 4000 Å. The electronic component layer is disposed on the second flexible structure, wherein the electronic component layer includes a thin film transistor and a photosensitive diode.
圖1A至1D是依照本發明的一實施例的一種感光元件基板的製造流程的的剖面示意圖。1A to 1D are schematic cross-sectional views of a manufacturing process of a photosensitive element substrate according to an embodiment of the present invention.
請參照圖1A,提供載板101。載板101為硬性基板,其材料例如是玻璃、陶瓷、矽晶圓或其他具備剛性的材料。在本實施例中,可形成離型層102於載板101上,使載板101可藉由離型層102而與後續製程步驟中所形成的膜層分離。在一些實施例中,離型層102例如是由弱接著力的材質所組成。在其他實施例中,組成離型層的材質的接著力可以經由熱製程、紫外光(UV)製程、雷射製程或其他類似的製程而減小。Referring to Figure 1A, a
請繼續參照圖1A,形成第一樹脂層112於載板101之上,形成第一阻障層114於第一樹脂層112上。第一樹脂層112的材料例如為聚醯亞胺(polyimide,PI)、聚對苯二甲酸乙二酯(polyethylene terephthalate,PET)或其他可撓性材質。第一阻障層114的材料例如可以使用氮化物、氧化物、氮氧化物或其他無機材料,但本發明不以此為限。在一些實施例中,第一樹脂層112的厚度在2 μm至10 μm之間,第一阻障層114的厚度在100 nm至900 nm之間。第一樹脂層112與第一阻障層114構成第一柔性結構110。Please continue to refer to FIG. 1A , a
請繼續參照圖1A,形成金屬層120於第一阻障層114上。金屬層120的材料例如為鉬、鋁或其他合適金屬。金屬層120的厚度可在130 Å至4000 Å之間。在一些實施例中,形成金屬層120的方法包括物理氣相沉積、化學氣相沉積、原子層沉積或其他合適的製程。在一些實施例中,金屬層120可以經蝕刻製程而圖案化。Please continue to refer to FIG. 1A , a
請繼續參照圖1A,形成第二樹脂層132於金屬層120上,形成第二阻障層134於第二樹脂層132上。在一些實施例中,金屬層120經圖案化而具有多個開口,而第二樹脂層132填入金屬層120的開口中並接觸第一阻障層114。第二樹脂層132的材料例如為聚醯亞胺(polyimide,PI)、聚對苯二甲酸乙二酯(polyethylene terephthalate,PET)或其他可撓性材質。第二阻障層134的材料例如可以使用氮化物、氧化物、氮氧化物或其他無機材料,但本發明不以此為限。在一些實施例中,第二樹脂層132的厚度在2 μm至10 μm之間,第二阻障層134的厚度在100 nm至900 nm之間。第二樹脂層132與第二阻障層134構成第二柔性結構130。在一些實施例中,第一樹脂層112與第二樹脂層132包括相同的材料,且第一阻障層114與第二阻障層134包括相同的材料,但本發明不以此為限。Please continue to refer to FIG. 1A , a
請繼續參照圖1A,形成電子元件層140於第二阻障層134上。電子元件層140可包括訊號線(未繪示)、薄膜電晶體(未繪示)以及感光二極體(未繪示),但本發明不以此為限。電子元件層140適於將可見光訊號轉換為電訊號。在一些實施例中,可選地形成閃爍體層150於電子元件層140上。閃爍體層150適用於將X光轉成可見光。Please continue to refer to FIG. 1A , an
請參照圖1B,移除載板101。舉例來說,可以藉由紫外光、雷射、可見光或熱等方式將外部能量施加至離型層102,以減少離型層102的黏著力,接著再移除載板101。在一些實施例中,載板101還可以藉由機械剝除或其他適宜的移除製程來移除,於本發明並不加以限制。由於金屬層120設置於第一柔性結構110與第二柔性結構130之間,金屬層120可加強整體結構的強度,避免電子元件層140在移除載板101的製程中受損。此外,金屬層120具有屏蔽靜電的效果,可避免移除載板101的過程中所產生的靜電對電子元件層140造成損傷。Referring to FIG. 1B , the
請參照圖1C,貼附基板100a於第一樹脂層112上。基板100a為軟性基板,且基板100a的材料例如為聚對苯二甲酸乙二酯(polyethylene terephthalate,PET)、聚醯亞胺(polyimide,PI)或其他可撓性材質。在一些實施例中,基板100a的厚度在50 μm至500 μm之間。Referring to FIG. 1C , the
請參照圖1D,可選地設置導電膜160於基板100a上,基板100a位於導電膜160與第一樹脂層112之間。導電膜160的材料例如是導電的高分子材料或內部包含有導電材料的高分子材料。導電膜160可減少感光元件基板10在後續模組化製程時因靜電導致電子元件層140受損的可能。在一些實施例中,導電膜160為膠帶,且設置導電膜160的方法包括將導電膜160貼附於基板100a上。在一些實施例中,在貼附導電膜160時,導電膜160有可能會因為製程誤差而出現貼附不平整的問題。Referring to FIG. 1D , the
經過上述製程後可大致上完成感光元件基板10的製作。After the above process, the production of the
請參照圖1D,感光元件基板10包括第一柔性結構110、金屬層120、第二柔性結構120以及電子元件層140。在本實施例中,感光元件基板10還包括導電膜160、基板100a以及閃爍體層150。第一柔性結構110設置於基板100a上。第一柔性結構110包括第一樹脂層112以及設置於第一樹脂層112上的第一阻障層114。金屬層120設置於第一阻障層114上,金屬層120的厚度可在130 Å至4000 Å之間。第二柔性結構130設置於金屬層120上。第二柔性結構130包括第二樹脂層132以及設置於第二樹脂層132上的第二阻障層134。換句話說,金屬層120設置於第一柔性結構110與第二柔性結構130之間,且位於第一阻障層114與第二樹脂層132之間。電子元件層140設置於第二柔性結構130上。閃爍體層150設置於電子元件層140上。導電膜160設置於基板100a上,且基板100a位於導電膜160與第一樹脂層112之間。也就是說,導電膜160與第一柔性結構110、金屬層120以及第二柔性結構120是分別設置於基板100a的兩側。Referring to FIG. 1D , the
在本實施例中,基板100a為軟性基板,因此感光元件基板10具有可撓性,可因應不同待測物的形狀作彈性的應用,例如應用於管線檢測、焊接檢測等,但本發明不以此為限。在其他實施例中,基板100a可以為硬性的平面基板或硬性的曲面基板。In this embodiment, the
在一些實施例中,金屬層120為浮置(floating)的。換句話說,金屬層120不會直接與電子元件層140中的元件電性連接。In some embodiments,
在使用感光元件基板10執行X光感測時,感光元件基板10可透過閃爍體層150將X光L1轉成可見光L2,可見光L2在入射至電子元件層140之後,部分的可見光L2會被電子元件層140吸收,而另一部分可見光L3會穿過電子元件層140。由於金屬層120設置於電子元件層140的背面且金屬層120的厚度在130 Å至4000 Å之間,至少部分可見光L3在入射至導電膜160之前會先經過金屬層120,使可見光L3會在金屬層120反射形成反射光L4而回到電子元件層140。換句話說,金屬層120可以改善可見光L3照射至導電膜160的問題,進而避免感光元件基板10因導電膜160貼附不平整而造成之影像不均勻的問題。此外,即使可見光L3穿過圖案化之金屬層120而被不平整之導電膜160反射形成方向偏折的反射光,方向偏折的反射光也容易被圖案化之金屬層120再次反射而離開感光元件基板10,進而避免影像因為方向偏折的反射光而出現品質下降的問題。When using the
圖2A至2B是依照本發明另一實施例的一種感光元件基板的製造流程的剖面示意圖。圖2A至2B可以為接續圖1B的步驟的感光元件基板的製造方法的剖視示意圖。關於圖1A至1B的步驟說明可參考前述實施例,在此不贅述。在此必須說明的是,圖2A至2B的實施例沿用圖1A至1D的實施例的元件標號與部分內容,其中採用相同或近似的標號來表示相同或近似的元件,並且省略了相同技術內容的說明。關於省略部分的說明可參考前述實施例,在此不贅述。2A to 2B are schematic cross-sectional views of a manufacturing process of a photosensitive element substrate according to another embodiment of the present invention. 2A to 2B may be schematic cross-sectional views of the manufacturing method of the photosensitive element substrate following the steps of FIG. 1B. For the description of the steps in FIGS. 1A to 1B , reference may be made to the foregoing embodiments and will not be described again here. It must be noted here that the embodiment of FIGS. 2A to 2B follows the component numbers and part of the content of the embodiment of FIGS. 1A to 1D , where the same or similar numbers are used to represent the same or similar elements, and the same technical content is omitted. description. For descriptions of omitted parts, reference may be made to the foregoing embodiments and will not be described again here.
請參照圖2A,在移除載板101之後,貼附基板100b於第一樹脂層112上。基板100b為硬性的曲面基板,其材料例如為玻璃、陶瓷、矽晶圓或其他合適材料。如此一來,第一柔性結構110、金屬層120、第二柔性結構120以及電子元件層140可隨基板100b的弧度具有一定程度的彎曲。Referring to FIG. 2A , after the
請參照圖2B,設置導電膜160於基板100b上。Referring to FIG. 2B, the
經過上述製程後可大致上完成感光元件基板20的製作。本實施例的感光元件基板20與圖1D的感光元件基板10的主要差異在於:感光元件基板20的基板100b為硬性的曲面基板。After the above process, the production of the
圖3A至3B是依照本發明另一實施例的一種感光元件基板的製造流程的剖面示意圖。在此必須說明的是,圖3A至3B的實施例沿用圖1A至1D的實施例的元件標號與部分內容,其中採用相同或近似的標號來表示相同或近似的元件,並且省略了相同技術內容的說明。關於省略部分的說明可參考前述實施例,在此不贅述。3A to 3B are schematic cross-sectional views of a manufacturing process of a photosensitive element substrate according to another embodiment of the present invention. It must be noted here that the embodiment of FIGS. 3A to 3B follows the component numbers and part of the content of the embodiment of FIGS. 1A to 1D , where the same or similar numbers are used to represent the same or similar elements, and the same technical content is omitted. description. For descriptions of omitted parts, reference may be made to the foregoing embodiments and will not be described again here.
請參照圖3A,提供載板101。載板101為硬性的平面基板,其材料例如是玻璃、陶瓷、矽晶圓或其他具備一定剛性的材料。然後,依序形成第一樹脂層112於載板101上,形成第一阻障層114於第一樹脂層112上。形成金屬層120於第一阻障層114上,形成第二樹脂層132於金屬層120上,形成第二阻障層134於第二樹脂層132上,形成電子元件層140於第二阻障層134上,形成閃爍體層150於電子元件層140上。在本實施例中,第一樹脂層112與載板101直接接觸,也就是說,第一樹脂層112與載板101之間不設置離型層。Referring to Figure 3A, a
請參照圖3B,設置導電膜160於載板101上。Referring to FIG. 3B , the
經過上述製程後可大致上完成感光元件基板30的製作。本實施例的感光元件基板30與圖1D的感光元件基板10的主要差異在於:感光元件基板30的基板100c為硬性的平面基板,因此在製造過程中,可直接將載板101作為感光元件基板30的基板100c,並直接將第一柔性結構110、金屬層120、第二柔性結構120以及電子元件層140形成於基板100c上,而無需經過載板移除製程。After the above process, the production of the
圖4A依照本發明另一實施例的一種感光元件基板的剖面示意圖。圖4B是圖4A的感光元件基板一種的上視示意圖。為了清楚示意,圖4B省略繪示部分構件,僅示意性的繪示金屬層120與基板100a的相對位置,省略的部分可參照圖4A加以理解。圖4A、4B的實施例沿用圖1A至1D的實施例的元件標號與部分內容,其中採用相同或近似的標號來表示相同或近似的元件,並且省略了相同技術內容的說明。關於省略部分的說明可參考前述實施例,在此不贅述。4A is a schematic cross-sectional view of a photosensitive element substrate according to another embodiment of the present invention. FIG. 4B is a schematic top view of the photosensitive element substrate of FIG. 4A . For clarity of illustration, some components are omitted in FIG. 4B , and only the relative positions of the
請參照圖4A與圖4B,本實施例的感光元件基板40與圖1的感光元件基板10的主要差異在於:感光元件基板40的金屬層120僅位於感光元件基板40的主動區R1。詳細來説,感光元件基板40具有主動區R1及位於主動區R1的至少一側的周邊區R2。電子元件層140中的薄膜電晶體(未繪示)及感光二極體(未繪示)位於主動區R1中,而金屬層120也位於主動區R1中。換句話說,金屬層120可與薄膜電晶體及感光二極體重疊。Referring to FIGS. 4A and 4B , the main difference between the
本實施例雖將周邊區R2繪示為環繞主動區R1,但並非用以限定本發明。周邊區R2可位於主動區R1的至少一側或是依實際需求調整。周邊區R2上可以設置有接合墊(未繪示)、訊號線(未繪示)或其他元件(未繪示)。Although the peripheral region R2 is shown as surrounding the active region R1 in this embodiment, this is not intended to limit the present invention. The peripheral area R2 can be located at at least one side of the active area R1 or adjusted according to actual needs. Bonding pads (not shown), signal lines (not shown) or other components (not shown) may be provided on the peripheral region R2.
圖5A依照本發明另一實施例的一種感光元件基板的上視示意圖。圖5B是圖5A的感光元件基板的區域A的局部放大上視示意圖。圖5C是圖5B的剖線B-B’的剖視示意圖。為了清楚示意,圖5B省略繪示部分構件,並以透視方式示意性地繪示金屬層120及電子元件層140的部分結構,省略的部分可參照圖5C加以理解。圖5A至5C的實施例沿用圖4A至4B的實施例的元件標號與部分內容,其中採用相同或近似的標號來表示相同或近似的元件,並且省略了相同技術內容的說明。關於省略部分的說明可參考前述實施例,在此不贅述。FIG. 5A is a schematic top view of a photosensitive element substrate according to another embodiment of the present invention. FIG. 5B is a partially enlarged top view of area A of the photosensitive element substrate in FIG. 5A . Fig. 5C is a schematic cross-sectional view along the line B-B' of Fig. 5B. For clarity of illustration, some components are omitted in FIG. 5B , and partial structures of the
請參照圖5A至圖5C,本實施例的感光元件基板50與圖4A至4B的感光元件基板40的主要差異在於:感光元件基板50的金屬層120包括多個開口,且開口與感光二極體PD重疊。詳細而言,電子元件層140可包括多個陣列排列的感光二極體PD及與對應的感光二極體PD電性連接的薄膜電晶體T。感光二極體PD及薄膜電晶體T位於感光元件基板50的主動區R1中。Please refer to FIGS. 5A to 5C . The main difference between the
薄膜電晶體T可包括閘極G、半導體通道層CH、源極S以及汲極D。閘極G設置於第二阻障層134上,並與第一訊號線LN1電性連接。在一些實施例中,第一訊號線LN1與閘極G位於相同導電層,且兩者連成一體。在一些實施例中,第一訊號線LN1與閘極G的材料可包括金屬、金屬材料的氮化物、金屬材料的氧化物、金屬材料的氮氧化物、或其他合適的材料、或是金屬材料與其他導電材料的堆疊層。半導體通道層CH設置於閘極G之上,且閘極G與半導體通道層CH之間夾有閘極絕緣層GI。在一些實施例中,半導體通道層CH可包括低溫多晶矽(Low Temperature Poly-Silicon, LTPS)、氧化銦鎵鋅(Indium Gallium Zinc Oxide, IGZO)或其他半導體材料。源極S與汲極D分別設置於半導體通道層CH的兩端上,以與半導體通道層CH電性連接。在一些實施例中,源極S與汲極D位於相同導電層。在一些實施例中,源極S與汲極D的材料包括金屬、金屬材料的氮化物、金屬材料的氧化物、金屬材料的氮氧化物、或其他合適的材料、或是金屬材料與其他導電材料的堆疊層。The thin film transistor T may include a gate electrode G, a semiconductor channel layer CH, a source electrode S, and a drain electrode D. The gate G is disposed on the
感光二極體PD可包括第一電極E1、感光層PH以及第二電極E2。第一電極E1設置於閘極絕緣層GI上,並可延伸至汲極D而與汲極D電性連接。在一些實施例中,第一電極E1與汲極D位於相同導電層,且兩者連成一體。絕緣層IL1設置於半導體通道層CH、源極S、汲極D與第一電極E1上。絕緣層IL1具有重疊於第一電極E1的開口OP1。感光層PH設置於開口OP1中及第一電極E1上。感光層PH的材料可包括富矽氧化層(Silicon-rich oxide)、富矽氮化物(Silicon-rich nitride)、富矽氮氧化物(silicon-rich oxynitride)、富矽碳化物(silicon-rich carbide)、富矽碳氧化物(silicon-rich oxycarbide)、氫化富矽氧化物(hydrogenated silicon-rich oxide)、氫化富矽氮化物(hydrogenated silicon-rich nitride)、氫化富矽碳化物(hydrogenated silicon-rich carbide)或其組合。在其他實施例中,感光層PH可包括P型半導體、本質半導體以及N型半導體的堆疊層。換句話說,在其他實施例中,感光層PH可為PIN型二極體(PIN photodiode)。第二電極E2設置於感光層PH上。在一些實施例中,第二電極E2包括透明導電材料,例如銦錫氧化物、銦鋅氧化物、鋁錫氧化物、鋁鋅氧化物、銦鎵鋅氧化物或是上述至少二者之堆疊層,但本發明不以此為限。絕緣層IL2設置於感光二極體PD與薄膜電晶體T之上,以覆蓋絕緣層IL1、感光層PH及第二電極E2。平坦層PL1設置於絕緣層IL2上。The photodiode PD may include a first electrode E1, a photosensitive layer PH, and a second electrode E2. The first electrode E1 is disposed on the gate insulating layer GI and can extend to the drain D to be electrically connected to the drain D. In some embodiments, the first electrode E1 and the drain electrode D are located on the same conductive layer, and they are connected together. The insulating layer IL1 is disposed on the semiconductor channel layer CH, the source S, the drain D and the first electrode E1. The insulating layer IL1 has an opening OP1 overlapping the first electrode E1. The photosensitive layer PH is disposed in the opening OP1 and on the first electrode E1. The material of the photosensitive layer PH may include silicon-rich oxide, silicon-rich nitride, silicon-rich oxynitride, silicon-rich carbide ), silicon-rich oxycarbide, hydrogenated silicon-rich oxide, hydrogenated silicon-rich nitride, hydrogenated silicon-rich carbide carbide) or combinations thereof. In other embodiments, the photosensitive layer PH may include a stacked layer of P-type semiconductor, intrinsic semiconductor, and N-type semiconductor. In other words, in other embodiments, the photosensitive layer PH may be a PIN photodiode. The second electrode E2 is provided on the photosensitive layer PH. In some embodiments, the second electrode E2 includes a transparent conductive material, such as indium tin oxide, indium zinc oxide, aluminum tin oxide, aluminum zinc oxide, indium gallium zinc oxide, or a stacked layer of at least two of the above. , but the present invention is not limited to this. The insulating layer IL2 is disposed on the photosensitive diode PD and the thin film transistor T to cover the insulating layer IL1, the photosensitive layer PH and the second electrode E2. The flat layer PL1 is provided on the insulating layer IL2.
源極S可透過導通孔V1電性連接至第二訊號線LN2。舉例來說,第二訊號線LN2設置於平坦層PL1之上,導通孔V1可貫穿平坦層PL1、絕緣層IL2、絕緣層IL1而與源極S電性連接。在一些實施例中,絕緣層IL3可設置於第二訊號線LN2與平坦層PL1之間,絕緣層IL4可覆蓋於第二訊號線L2上。The source S can be electrically connected to the second signal line LN2 through the via hole V1. For example, the second signal line LN2 is disposed on the planar layer PL1, and the via hole V1 can penetrate the planar layer PL1, the insulating layer IL2, and the insulating layer IL1 to be electrically connected to the source S. In some embodiments, the insulating layer IL3 may be disposed between the second signal line LN2 and the planar layer PL1, and the insulating layer IL4 may cover the second signal line L2.
第二電極E2可透過導通孔V2電性連接至第三訊號線LN3。舉例來說,第三訊號線LN3設置於絕緣層IL4之上,導通孔V2可貫穿絕緣層IL3、平坦層PL1、絕緣層IL2而與第二電極E2電性連接。在一些實施例中,絕緣層IL5可設置於第三訊號線LN3上,平坦層PL2可設置於絕緣層IL5上。The second electrode E2 can be electrically connected to the third signal line LN3 through the via hole V2. For example, the third signal line LN3 is disposed on the insulating layer IL4, and the via hole V2 can penetrate the insulating layer IL3, the planar layer PL1, and the insulating layer IL2 to be electrically connected to the second electrode E2. In some embodiments, the insulating layer IL5 may be disposed on the third signal line LN3, and the flat layer PL2 may be disposed on the insulating layer IL5.
金屬層120位於主動區R1中,且為網狀並包括多個開口OP2,各開口OP2重疊於感光二極體PD中對應的至少一個。換句話說,金屬層120與感光二極體PD不重疊。如此一來,可以減少金屬層120與感光二極體PD之間產生的寄生電容。The
10, 20, 30, 40, 50:感光元件基板
100a, 100b, 100c:基板
101:載板
102:離型層
110:第一柔性結構
112:第一樹脂層
114:第一阻障層
120:金屬層
130:第二柔性結構
132:第二樹脂層
134:第二阻障層
140:電子元件層
150:閃爍體層
160:導電膜
CH:半導體通道層
G:閘極
GI:閘極絕緣層
D:汲極
E1:第一電極
E2:第二電極
LN1:第一訊號線
LN2:第二訊號線LN3:第三訊號線
L1:X光
L2, L3:可見光
L4:反射光
IL1, IL2, IL3, IL4, IL5:絕緣層OP1, OP2:開口
PD:感光二極體
PH:感光層
PL1, PL2:平坦層
R1:主動區
R2:周邊區
S:源極
T:薄膜電晶體
V1, V2:導通孔
10, 20, 30, 40, 50:
圖1A至1D是依照本發明的一實施例的一種感光元件基板的製造流程的剖面示意圖。 圖2A至2B是依照本發明的另一實施例的一種感光元件基板的製造流程的剖面示意圖。 圖3A至3B是依照本發明的另一實施例的一種感光元件基板的製造流程的剖面示意圖。 圖4A依照本發明另一實施例的一種感光元件基板的剖面示意圖。 圖4B是圖4A的感光元件基板一種的上視示意圖。 圖5A依照本發明另一實施例的一種感光元件基板的上視示意圖。 圖5B是圖5A的感光元件基板的區域A的局部放大上視示意圖。 圖5C是圖5B沿剖線B-B’的剖視示意圖。 1A to 1D are schematic cross-sectional views of a manufacturing process of a photosensitive element substrate according to an embodiment of the present invention. 2A to 2B are schematic cross-sectional views of a manufacturing process of a photosensitive element substrate according to another embodiment of the present invention. 3A to 3B are schematic cross-sectional views of a manufacturing process of a photosensitive element substrate according to another embodiment of the present invention. 4A is a schematic cross-sectional view of a photosensitive element substrate according to another embodiment of the present invention. FIG. 4B is a schematic top view of the photosensitive element substrate of FIG. 4A . FIG. 5A is a schematic top view of a photosensitive element substrate according to another embodiment of the present invention. FIG. 5B is a partially enlarged top view of area A of the photosensitive element substrate in FIG. 5A . Figure 5C is a schematic cross-sectional view along section line B-B' of Figure 5B.
10:感光元件基板 10: Photosensitive element substrate
100a:基板 100a:Substrate
110:第一柔性結構 110: First flexible structure
112:第一樹脂層 112: First resin layer
114:第一阻障層 114: First barrier layer
120:金屬層 120:Metal layer
130:第二柔性結構 130: Second flexible structure
132:第二樹脂層 132: Second resin layer
134:第二阻障層 134: Second barrier layer
140:電子元件層 140: Electronic component layer
150:閃爍體層 150:Scintillator layer
160:導電膜 160:Conductive film
L1:X光 L1:X-ray
L2,L3:可見光 L2, L3: visible light
L4:反射光 L4: Reflected light
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