TW202334625A - Exhaust monitoring apparatus and method for substrate processing systems - Google Patents
Exhaust monitoring apparatus and method for substrate processing systems Download PDFInfo
- Publication number
- TW202334625A TW202334625A TW111135478A TW111135478A TW202334625A TW 202334625 A TW202334625 A TW 202334625A TW 111135478 A TW111135478 A TW 111135478A TW 111135478 A TW111135478 A TW 111135478A TW 202334625 A TW202334625 A TW 202334625A
- Authority
- TW
- Taiwan
- Prior art keywords
- tube
- pressure
- collector element
- exhaust
- openings
- Prior art date
Links
- 238000012544 monitoring process Methods 0.000 title claims abstract description 40
- 238000000034 method Methods 0.000 title claims description 50
- 238000012545 processing Methods 0.000 title description 29
- 239000000758 substrate Substances 0.000 title description 19
- 230000002093 peripheral effect Effects 0.000 claims abstract description 20
- 238000012806 monitoring device Methods 0.000 claims description 71
- 238000000926 separation method Methods 0.000 claims description 6
- 210000000056 organ Anatomy 0.000 claims 1
- 239000007789 gas Substances 0.000 description 137
- 238000005259 measurement Methods 0.000 description 43
- 238000009530 blood pressure measurement Methods 0.000 description 22
- 238000003860 storage Methods 0.000 description 17
- 238000010586 diagram Methods 0.000 description 9
- 238000004891 communication Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 230000015654 memory Effects 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- 230000006870 function Effects 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 238000012546 transfer Methods 0.000 description 5
- 238000000151 deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 230000009467 reduction Effects 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 238000000231 atomic layer deposition Methods 0.000 description 3
- 230000000875 corresponding effect Effects 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 230000002829 reductive effect Effects 0.000 description 3
- 238000011144 upstream manufacturing Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000002596 correlated effect Effects 0.000 description 2
- 238000013016 damping Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 230000008520 organization Effects 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 238000004513 sizing Methods 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- ORQBXQOJMQIAOY-UHFFFAOYSA-N nobelium Chemical compound [No] ORQBXQOJMQIAOY-UHFFFAOYSA-N 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- APTZNLHMIGJTEW-UHFFFAOYSA-N pyraflufen-ethyl Chemical compound C1=C(Cl)C(OCC(=O)OCC)=CC(C=2C(=C(OC(F)F)N(C)N=2)Cl)=C1F APTZNLHMIGJTEW-UHFFFAOYSA-N 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01M—TESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
- G01M15/00—Testing of engines
- G01M15/04—Testing internal-combustion engines
- G01M15/10—Testing internal-combustion engines by monitoring exhaust gases or combustion flame
- G01M15/102—Testing internal-combustion engines by monitoring exhaust gases or combustion flame by monitoring exhaust gases
- G01M15/106—Testing internal-combustion engines by monitoring exhaust gases or combustion flame by monitoring exhaust gases using pressure sensors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
Abstract
Description
本揭示內容係關於排氣監測設備及方法,特別係關於用於基板處理系統的排氣監測設備及方法。本申請案主張於2021年10月22日申請之美國臨時專利申請案第63/270,965號且發明名稱為「用於基板處理系統的排氣監測設備及方法(EXHAUST MONITORING APPARATUS AND METHOD FOR SUBSTRATE PROCESSING SYSTEMS)」的優先權,基於所有目的該申請案乃藉由參照而整體地併入本文中。The present disclosure relates to exhaust monitoring devices and methods, and particularly to exhaust monitoring devices and methods for use in substrate processing systems. This application claims U.S. Provisional Patent Application No. 63/270,965 filed on October 22, 2021, and the invention is titled "EXHAUST MONITORING APPARATUS AND METHOD FOR SUBSTRATE PROCESSING SYSTEMS )", which application is hereby incorporated by reference in its entirety for all purposes.
基板處理系統係用於在例如半導體晶圓的基板上執行諸如膜之沉積與蝕刻的處理。例如,可使用化學氣相沉積(CVD)、電漿增強CVD(PECVD)、原子層沉積(ALD)、電漿增強ALD(PEALD)、及/或其他沉積製程來執行沉積以沉積導電膜、介電膜、或其他型式的膜。於沉積期間,基板係安置在支撐架(例如,台座)上並可於一或更多製程步驟期間使用氣體分配裝置(例如,噴淋頭)將一或更多前驅物氣體供應至處理腔室。然後氣體將會經由一或更多排氣通道或排氣管離開處理腔室。Substrate processing systems are used to perform processes such as deposition and etching of films on substrates such as semiconductor wafers. For example, deposition may be performed using chemical vapor deposition (CVD), plasma enhanced CVD (PECVD), atomic layer deposition (ALD), plasma enhanced ALD (PEALD), and/or other deposition processes to deposit conductive films, dielectrics, Electric membrane, or other types of membranes. During deposition, the substrate is mounted on a support (e.g., a pedestal) and a gas distribution device (e.g., a showerhead) may be used to supply one or more precursor gases to the processing chamber during one or more process steps. . The gas will then exit the processing chamber via one or more exhaust passages or exhaust ducts.
可藉由與管中的一或更多開口耦接的感測器來監測排氣管中的氣體壓力。習知感測器係位於管外並附接至管中的一或更多開口。可藉由可具實質上大長度的一或更多感測管來進行附接。由感測管傳送的資訊受限於氣體壓力。缺乏局部測量可能導致流動要求的過度補償及排氣管的重新設計等等。過度補償可能花費成本並可能對設計施加限制。如此一來,有需要具有用於獲得局部測量及用於識別額外氣流參數的在線氣流監測器。The gas pressure in the exhaust pipe can be monitored by a sensor coupled to one or more openings in the pipe. Conventional sensors are located outside the tube and attached to one or more openings in the tube. Attachment may be made by one or more sensing tubes, which may be of substantially large length. The information transmitted by the sensing tube is limited by the gas pressure. Lack of local measurement can lead to overcompensation of flow requirements, exhaust pipe redesign, etc. Overcompensating can be costly and may impose limitations on the design. As such, there is a need to have online airflow monitors for obtaining localized measurements and for identifying additional airflow parameters.
依據某些實施例,提供包含排氣管(本文稱為管)以及耦接在管內 之排氣監測設備的在線氣流監測系統。在某些實施例中,排氣監測設備包括周邊支撐架、複數感測器管、及電路板。在某些實施例中,周邊支撐架包括跨周邊支撐架而橫向延伸的一或更多收集器元件。在某些實施例中,一或更多收集器元件各自包括配置以吸入氣體的至少一開口。在其他實施例中,一或更多收集器元件各自包括配置以吸入氣體的複數開口以獲取來自管內諸多區域的壓力讀數。在某些實施例中,管具有圓形截面,其中一或更多收集器元件跨過管。在某些實施例中,可將一對收集器元件垂直地分離,即,管的縱軸。可沿著直徑安置一或更多收集器元件以獲取跨管之直徑的壓力輪廓測量。在某些實施例中,一或更多收集器元件包括沿著平行於管之縱軸之方向的第一複數開口、以及沿著相同方向的第二複數開口。在其他實施例中,一或更多收集器元件包括沿著平行於管之縱軸之方向的第一複數開口。在某些實施例中,一或更多收集器元件包括沿著正交於管之縱軸之方向的第二複數開口。According to certain embodiments, an online airflow monitoring system is provided that includes an exhaust pipe (herein referred to as a pipe) and an exhaust monitoring device coupled within the pipe. In some embodiments, an exhaust monitoring device includes a perimeter support frame, a plurality of sensor tubes, and a circuit board. In certain embodiments, the perimeter support frame includes one or more collector elements extending laterally across the perimeter support frame. In certain embodiments, one or more collector elements each include at least one opening configured to draw in gas. In other embodiments, one or more collector elements each include a plurality of openings configured to draw in gas to obtain pressure readings from various areas within the tube. In certain embodiments, the tube has a circular cross-section with one or more collector elements spanning the tube. In certain embodiments, a pair of collector elements may be separated vertically, ie, the longitudinal axis of the tube. One or more collector elements may be positioned along the diameter to obtain pressure profile measurements across the diameter of the pipe. In certain embodiments, one or more collector elements include a first plurality of openings along a direction parallel to the longitudinal axis of the tube, and a second plurality of openings along the same direction. In other embodiments, one or more collector elements include a first plurality of openings in a direction parallel to the longitudinal axis of the tube. In certain embodiments, one or more collector elements include a second plurality of openings in a direction orthogonal to the longitudinal axis of the tube.
在某些實施例中,電路板包括耦接至一或更多收集器元件中之一或更多開口的複數壓力感測器。在某些實施例中,壓力感測器為絕對壓力感測器。在其他實施例中,壓力感測器為差壓感測器。在某些實施例中,壓力感測器可包括複數噴嘴以利於來自收集器元件中不同區域的壓力測量。在某些實施例中,電路板可包括傳輸器電路以將來自複數壓力感測器的讀數傳輸到外接至排氣監測設備的計算裝置。In some embodiments, the circuit board includes a plurality of pressure sensors coupled to one or more openings in one or more collector elements. In some embodiments, the pressure sensor is an absolute pressure sensor. In other embodiments, the pressure sensor is a differential pressure sensor. In some embodiments, the pressure sensor may include multiple nozzles to facilitate pressure measurements from different areas in the collector element. In some embodiments, the circuit board may include transmitter circuitry to transmit readings from the plurality of pressure sensors to a computing device external to the exhaust gas monitoring device.
依據某些實施例,可利用排氣監測設備以測量排氣管中的氣體性質。在某些實施例中,所利用的方法包括經由排氣監測設備之第一收集器元件中的第一開口及第二收集器元件中的第二開口吸入氣體。第一收集器元件與第二收集器元件係在排氣管內分隔一距離。方法進一步包括將氣體從第一開口及第二開口兩者輸送至位於排氣管內的一或更多壓力感測器。在某些實施例中,方法進一步包括利用第一感測器管以將氣體從第一開口輸送至一或更多壓力感測器。在某些實施例中,方法進一步包括利用第二感測器管以將氣體從第二開口輸送至一或更多壓力感測器。方法進一步包括藉由一或更多壓力感測器而測量第一感測器管內的第一壓力。方法進一步包括藉由一或更多壓力感測器而測量第二感測器管內的第二壓力。方法進一步包括至少部分地基於由一或更多壓力感測器所測量的第一壓力及第二壓力而輸出壓力讀數。在某些實施例中,方法進一步包括基於第一壓力、第二壓力、及氣體之密度的預定值而計算流速。儘管此處的範例主要係針對排氣監測,但這並不排除在其他應用中使用排氣監測設備。According to certain embodiments, exhaust monitoring equipment may be utilized to measure gas properties in the exhaust pipe. In some embodiments, the method utilized includes drawing gas through a first opening in a first collector element and a second opening in a second collector element of the exhaust gas monitoring device. The first collector element and the second collector element are spaced apart within the exhaust pipe. The method further includes delivering gas from both the first opening and the second opening to one or more pressure sensors located within the exhaust pipe. In certain embodiments, the method further includes utilizing the first sensor tube to deliver gas from the first opening to one or more pressure sensors. In certain embodiments, the method further includes utilizing a second sensor tube to deliver gas from the second opening to the one or more pressure sensors. The method further includes measuring the first pressure within the first sensor tube by one or more pressure sensors. The method further includes measuring the second pressure within the second sensor tube by one or more pressure sensors. The method further includes outputting a pressure reading based at least in part on the first pressure and the second pressure measured by the one or more pressure sensors. In certain embodiments, the method further includes calculating the flow rate based on predetermined values of the first pressure, the second pressure, and the density of the gas. Although the examples here focus on exhaust monitoring, this does not preclude the use of exhaust monitoring equipment in other applications.
在所附圖式中,藉由範例的方式而非藉由限制的方式來繪示本文所述的素材。為了繪示內容的簡化及清晰,圖式中繪示的元件並不一定按比例繪製。例如,為了清晰起見可能將某些元件的尺寸相對於其他元件放大之。同時,為了討論內容之清晰而可能以其簡化的「理想」形式與幾何形狀來表示諸多物理特徵,但仍應理解實際實施方式可能僅近似於所繪示的理想。例如,可繪製光滑表面及正方形交點而忽略由奈米加工技術形成之結構的有限粗糙度、圓角、及不完美的角度交點特徵。再者,於認為適當之處,在圖式當中乃重複參考標號以指示相應或相似的元件。In the accompanying drawings, the material described herein is illustrated by way of example and not by way of limitation. For the sake of simplicity and clarity, the elements depicted in the drawings are not necessarily drawn to scale. For example, the dimensions of some elements may be exaggerated relative to other elements for clarity. Also, while many physical features may be represented in simplified "ideal" forms and geometries for clarity of discussion, it is understood that actual implementations may only approximate the ideals depicted. For example, smooth surfaces and square intersections can be drawn while ignoring the finite roughness, rounded corners, and imperfect angular intersection characteristics of structures formed by nanofabrication techniques. Furthermore, where deemed appropriate, reference numbers are repeated in the drawings to indicate corresponding or similar elements.
現描述智慧型排氣監測設備。在以下說明內容中,為了提供對本揭示內容之實施例的透徹理解而提出許多例如結構方案的具體細節。對於熟悉本技術領域人士而言將顯見可在不具有此些具體細節的情況下實現本揭示內容之實施例。在其他情況下,為避免不必要地混淆本揭示內容之實施例而較少詳細描述例如排氣設備操作的已知特徵。再者,應理解圖式中所示的諸多實施例係說明性的呈現方式而不一定按比例繪製。The intelligent exhaust monitoring equipment is now described. In the following description, numerous specific details, such as structural arrangements, are set forth in order to provide a thorough understanding of embodiments of the present disclosure. It will be apparent to those skilled in the art that embodiments of the present disclosure may be practiced without these specific details. In other instances, well-known features, such as exhaust device operation, are described in less detail to avoid unnecessarily obscuring embodiments of the present disclosure. Furthermore, it is to be understood that the various embodiments shown in the drawings are presented by way of illustration and are not necessarily drawn to scale.
在某些情況下,於以下說明內容中,為了避免混淆本揭示內容而係以方塊圖的形式而非詳細顯示已知的方法及裝置。本說明書各處所參照的「實施例」或「一實施例」或「某些實施例」意指與該實施例連結而描述的特定特徵、結構、功能、或特性係包括在本揭示內容的至少一實施例中。因而,於本說明書全文諸多處出現的用語「在實施例中」或「在一實施例中」或「在某些實施例中」並不一定指本揭示內容的相同實施例。再者,在一或更多實施例中,特定特徵、結構、功能或特性可以任何適當的方式組合。例如,可將第一實施例與第二實施例組合,只要其中關聯於兩實施例的任何特定特徵、結構、功能或特性不相互排斥。In some cases, well-known methods and devices are shown in block diagram form rather than in detail in order to avoid obscuring the disclosure. Reference throughout this specification to "an embodiment" or "an embodiment" or "certain embodiments" means that a particular feature, structure, function, or characteristic described in connection with the embodiment is included in at least part of this disclosure. In one embodiment. Thus, the appearances of the terms "in an embodiment" or "in an embodiment" or "in certain embodiments" in various places throughout this specification do not necessarily refer to the same embodiment of the present disclosure. Furthermore, the particular features, structures, functions or characteristics may be combined in any suitable manner in one or more embodiments. For example, a first embodiment may be combined with a second embodiment as long as any specific features, structures, functions or characteristics associated with the two embodiments are not mutually exclusive.
本文中可使用術語「耦接」及「連接」並連同其衍生詞以描述兩組件之間的功能或結構關係。此些術語並非旨在作為彼此的同義詞。反而,在特定實施例中,可使用「連接」來指示二或更多元件係與彼此直接物理、光學、或電接觸。可使用「耦接」來指示二或更多元件係與彼此直接或是間接(在該二或更多元件之間有其他中間元件)物理、電、或磁接觸,及/或指示該二或更多元件與彼此協作或交互作用(例如,像是在因果關係中)。The terms "coupled" and "connected" along with their derivatives may be used herein to describe the functional or structural relationship between two components. These terms are not intended as synonyms for each other. Rather, in particular embodiments, "connected" may be used to indicate that two or more elements are in direct physical, optical, or electrical contact with each other. "Coupled" may be used to indicate that two or more elements are in physical, electrical, or magnetic contact with each other, either directly or indirectly (with other intervening elements between the two or more elements), and/or to indicate that two or more elements are in physical, electrical, or magnetic contact with each other, either directly or indirectly (with other intervening elements between the two or more elements). More elements collaborate or interact with each other (e.g., like in a cause-and-effect relationship).
本文中使用的術語「之上」、「之下」、及「上」係指一組件或材料相對於其他組件或材料的相對位置而其中如此的物理關係是值得關注的。除非使用「直接」或「直接地」來修飾這些術語,否則可能存在一或更多中間組件或材料。在組件總成的背景中將進行相似的區分。如同在本說明內容中各處及申請專利範圍中所使用的,藉由術語「至少其中之一」或「其中一或更多」聯結的項目列表可意指所列術語的任意組合。As used herein, the terms "on," "under," and "on" refer to the relative position of one component or material with respect to other components or materials where such physical relationships are of concern. Unless "directly" or "directly" is used to modify these terms, one or more intermediate components or materials may be present. A similar distinction will be made in the context of component assemblies. As used throughout this description and in the claims, a list of items linked by the terms "at least one of" or "one or more of" may mean any combination of the listed terms.
本文中術語「鄰近」通常係指物件比鄰於(例如,在它們之間有一或更多物件的情況下緊鄰或靠近)或毗鄰(例如,與其鄰接)另一物件的位置。The term "adjacent" as used herein generally refers to a location where an object is adjacent (e.g., immediately adjacent or proximal in the case of one or more objects between them) or adjacent (e.g., adjacent to) another object.
除非在其用途的明確前後文中另有指定,否則術語「實質上等同」、「約等同」及「大約等同」意指在如此描述的兩物件之間僅存在偶然的變異。在本技術領域中,如此變異通常不超過引用值的+/-10%。Unless otherwise indicated in the clear context of their use, the terms "substantially equivalent," "approximately equivalent," and "approximately equivalent" mean that there is only incidental variation between the two items so described. In the art, such variations typically do not exceed +/-10% of the quoted value.
用於半導體裝置製造工具的現有排氣監測系統乃笨重且於功能上有所限制。現有排氣監測系統從連接至排氣管的感測器管收集資料並於坐落在排氣管之外部的計算裝置中判定外部壓力。氣壓並非係在排氣管內區域地測量而是在管線上之周邊點處的測量。然後從周邊測量中估計氣壓的截面測量。沿著管的縱軸和周邊所進行的壓力測量之間通常存在顯著差異。如此差異可能常導致排氣系統要求的高估,因為周邊處的氣體速度不能準確描述管之中心處的氣體速度。這些差異可能導致操作成本的顯著增加。再者,現有的排氣壓力監測系統缺乏測量氣體流速的能力,而氣體流速對於估計排氣管之傳導性(例如,氣流容積)係重要的。傳導性的測量可幫助判斷現有的排氣管是否足以實現必要的流動能力或者是否需要額外的排氣管。Existing exhaust monitoring systems for semiconductor device manufacturing tools are cumbersome and functionally limited. Existing exhaust monitoring systems collect data from a sensor tube connected to the exhaust pipe and determine the external pressure in a computing device located outside the exhaust pipe. The air pressure is not measured in the area within the exhaust pipe but at peripheral points along the pipe. Cross-sectional measurements of air pressure are then estimated from the perimeter measurements. There is often a significant difference between pressure measurements taken along the longitudinal axis and the perimeter of the tube. Such differences may often lead to an overestimation of exhaust system requirements because gas velocities at the periphery do not accurately describe gas velocities at the center of the tube. These differences can result in significant increases in operating costs. Furthermore, existing exhaust pressure monitoring systems lack the ability to measure gas flow rates, which are important for estimating exhaust pipe conductivity (eg, airflow volume). Measurements of conductivity can help determine whether existing exhaust pipes are sufficient to achieve the necessary flow capacity or if additional exhaust pipes are needed.
為了應對以上所述的限制,揭示可在半導體製造設備之排氣管、管道、或導管中實施的管內排氣監測設備。依據本揭示內容的實施例,排氣監測設備包括周邊支撐架及與周邊支撐架耦接的一或更多收集器元件。在某些實施例中一或更多收集器元件可為定制的條或桿。在某些實施例中,一或更多收集器元件跨周邊支撐架而橫向地延伸。在某些實施例中,一或更多收集器元件包括配置以吸入氣體或允許氣體流經與感測器(例如,壓力感測器、溫度感測器等)耦接之附接管的複數開口。在某些實施例中,電路板與周邊支撐架耦接。在某些實施例中,電路板包括耦接至一或更多收集器元件的複數壓力感測器以及用以傳輸來自複數壓力感測器之讀數的傳輸器(例如,傳輸器電路)。在某些實施例中,除了壓力感測器之外,電路板可包括一或更多流量感測器。In order to cope with the above-mentioned limitations, an in-line exhaust monitoring device that can be implemented in an exhaust pipe, a pipe, or a duct of a semiconductor manufacturing equipment is disclosed. According to embodiments of the present disclosure, an exhaust gas monitoring device includes a perimeter support frame and one or more collector elements coupled to the perimeter support frame. In certain embodiments one or more collector elements may be custom-made bars or rods. In certain embodiments, one or more collector elements extend laterally across the perimeter support frame. In certain embodiments, one or more collector elements include a plurality of openings configured to draw in gas or allow gas to flow through attached tubes coupled to sensors (eg, pressure sensors, temperature sensors, etc.) . In some embodiments, the circuit board is coupled to the perimeter support frame. In some embodiments, the circuit board includes a plurality of pressure sensors coupled to one or more collector elements and a transmitter (eg, transmitter circuit) to transmit readings from the plurality of pressure sensors. In some embodiments, the circuit board may include one or more flow sensors in addition to the pressure sensor.
在某些實施例中,排氣監測設備可進一步包括耦接在管內的分離式可動阻尼器。在某些實施例中,阻尼器可主動地控制管內的總氣流量。在某些實施例中,可經由有線連接、或無線地傳輸來自壓力感測器的讀數,以控制阻尼器去增加(若先前設定並非最大流量)或減少總氣流量。In certain embodiments, the exhaust monitoring device may further include a separately movable damper coupled within the tube. In some embodiments, the damper can actively control the total airflow within the tube. In some embodiments, readings from the pressure sensor may be transmitted via a wired connection, or wirelessly, to control the damper to increase (if not previously set to maximum flow) or decrease the total airflow.
舉例來說,諸如蝕刻或沉積工具的半導體製造設備可包括大量的排氣管。排氣管可與工具內的諸多腔室(處理腔室、真空傳送腔室、設備前端模組(EFEM)等)耦接。可將來自工具之不同部分的排氣管耦接至統一排氣中或至饋入統一排氣中的不同子排氣系統。在某些案例中,排氣管可能饋入不同系統中,某些系統需要排氣而某些可能不需要。排氣管可具有相同或不同的截面區並可被設計以適應取決於泵送氣體之容積的處理量。在某些實施例中,可個別地程式化不同子排氣管內的流速以增加效率。可將某些實施例中的排氣監測系統之阻尼器合併在一或更多排氣管中並可控制阻尼器以增加氣流處理量、效率、及跨不同管之均勻性或上述所有內容。For example, semiconductor manufacturing equipment such as etch or deposition tools may include numerous exhaust pipes. The exhaust pipe can be coupled to various chambers within the tool (process chamber, vacuum transfer chamber, equipment front end module (EFEM), etc.). Exhaust pipes from different parts of the tool can be coupled into a unified exhaust or to different sub-exhaust systems that feed into a unified exhaust. In some cases, the exhaust pipe may feed into different systems, some of which may require exhaust and some may not. The exhaust pipes may have the same or different cross-sectional areas and may be designed to accommodate the throughput depending on the volume of pumped gas. In some embodiments, flow rates within different sub-exhaust pipes may be individually programmed to increase efficiency. The dampers of the exhaust gas monitoring system in certain embodiments may be incorporated into one or more exhaust ducts and the dampers may be controlled to increase airflow throughput, efficiency, uniformity across different ducts, or all of the above.
依據本揭示內容的實施例,圖1A繪示基板處理系統100的示意圖,基板處理系統100包括在排氣系統103內的一或更多排氣監測設備101。在說明性的實施例中,排氣系統103係耦接至處理工具105。在某些範例中,可將排氣系統103指稱為廠用真空系統103。在某些實施例中,排氣系統103包括複數排氣管線(例如,排氣管線107A~107F),且每一排氣管線包括排氣監測設備101。此處將描述排氣監測設備101的細節。FIG. 1A illustrates a schematic diagram of a substrate processing system 100 including one or more
在某些實施例中,排氣管線107A~107F(總稱為「排氣管線107」)可為耦接在處理工具105內不同組件與排氣貯器109之間的排氣管。例如,處理工具105可包括至少一處理腔室105A(例如,處理模組)、傳送腔室105B(例如,真空傳送模組或VTM)、設備前端模組105C(或EFEM 105C)、及氣箱105D。在說明性的實施例中,排氣管線107A係與處理腔室105A耦接,排氣管線107B、107C、及107D係與傳送腔室105B耦接,排氣管線107E係耦接至EFEM 105C,以及排氣管線107F係耦接至氣箱105D。In some embodiments,
可能需要在各排氣管線107A~107F中維持必要的流量。實際上每一排氣管線107A~107F可具有不同的處理量要求而例如可藉由改變管的尺寸來滿足要求。在某些實施例中,在每一排氣監測設備101中之阻尼器(未顯示)的插入可使排氣系統103或廠用真空系統103能夠更有效率地操作。It may be necessary to maintain necessary flow rates in each
在某些實施例中,可藉由在各排氣管線107A~107F中之個別的排氣監測設備101來監測及控制排氣系統103中的總氣流量。在某些實施例中,可藉由外部控制器111個別地控制在每一排氣管線107A~107F中的阻尼器。在某些實施例中,外部控制器111可與在一或更多排氣監測設備101內的各傳輸器通信以旋轉各阻尼器以改變氣流。在某些實施例中,控制器111可控制除了基板處理系統100以外的其他基板處理系統。在某些實施例中,排氣監測設備101可直接地(或間接地經由例如控制器111的中介裝置)與在其他基板處理工具中的其他排氣監測系統通信。在某些實施例中,可配置集中式系統以經由一或更多排氣監測設備101或控制器111而監測及/或控制一整隊的基板處理工具中的排氣。In some embodiments, the total airflow in the
依據某些實施例,圖1B繪示排氣監測設備101的等角視圖。依據某些實施例,將排氣監測設備101設計為係安裝在排氣管/管道內以測量在線氣流的性質。如此,在說明性的實施例中,排氣監測設備101包括周邊支撐架102及一或更多收集器元件,例如與周邊支撐架102耦接或連接的收集器元件104。如圖所示,在某些實施例中,收集器元件104跨周邊支撐架102之上部而橫向地延伸。在某些實施例中,收集器元件104包括複數開口106及108。在圖1D及1E中進一步描述複數開口106及108的結構細節。在某些實施例中,單一開口106及單一開口108就可足夠。然而,複數開口106及108可提供跨不同點的測量。複數開口106及108穿過收集器元件104延伸並且係設計用於與感測器管介面接合(例如,經由插入)及用以吸入氣體。如圖所示,感測器管110A係經由開口106與收集器元件104耦接。Figure IB illustrates an isometric view of exhaust
在某些實施例中,電路板112係與周邊支撐架102的支撐板130耦接。在說明性的實施例中,電路板112包括至少一壓力感測器,例如經由感測器管110A耦接至收集器元件104的壓力感測器114。在實施例中,電路板112進一步包括傳輸器126以將來自壓力感測器114的讀數傳輸至另一裝置(例如,圖1A中的控制器111、電腦、或另一集中式控制或監測系統)。在某些實施例中,電路板112可包括除了壓力感測器114以外的至少一氣流感測器。在某些實施例中,亦可包括溫度感測器。In some embodiments, the
依據本揭示內容的實施例,圖1C繪示周邊支撐架102的等角視圖。在圖1C中沒有繪示電路板112及感測器管。於繪示內容中可見到用於安裝電路板的支撐板130。FIG. 1C illustrates an isometric view of
在實施例中,周邊支撐架102包括上環結構116(此後稱為環結構116)。在說明性的實施例中,環結構116是圓形。 如圖所示,收集器元件104跨環結構116的直徑延伸。在其他實施例中,環結構116可為橢圓形、正方形、矩形、或其他會允許與氣流管道妥善介面接合的形狀。收集器元件104跨直徑的放置有利地實現壓力與流量測量的徑向輪廓。在某些實施例中,開口106或108的數量取決於環結構116的直徑D
R以及開口106的直徑。在某些實施例中,D
R介於3吋與9吋之間的範圍。在某些實施例中,D
R係至少9吋但小於18吋。在某些實施例中,開口106的數量亦取決於所需測量位置的數量。在某些實施例中,該數量介於2和4之間。在某些實施例中,開口106的數量大於4。在說明性的實施例中,開口106的數量超過開口108的數量。在其他實施例中,開口108的數量超過開口106的數量。在示例性的實施例中,開口106的其中之一位於周邊支撐架102的軸心處。如同將於以下討論的內容,於軸心處的開口106會促進於最大壓力(及最大流速)下之氣流的偵測。在說明性的實施例中,收集器元件104包括開口106及108兩者。開口108係設計以提供氣流之分量的測量。利用開口106及108所獲得的該些測量值之間的差異可用於一或更多壓力感測器的校準。以下將進一步詳細描述在收集器元件104與120內與部分117相關的開口。
In an embodiment, the
圖1D繪示圖1C中收集器元件104之部分117的放大等角視圖。例如開口106A、106B及106C的複數開口具有平行於周邊支撐架102之縱軸(沿著Z方向)的定向。在某些實施例中,開口106A及106B從頂面104A延伸至底面104B。如圖所示,開口106A及106B跨收集器元件104的垂直厚度T
1延伸。T
1在頂面104A至底面104B之間跨一距離。一般而言,開口106A的下端係配置以吸入氣體且開口106A的上端係配置以耦接至感測管(未顯示)。然而,如同將於以下討論的(圖3E中),感測管的放置係取決於氣流的方向。在說明性的實施例中,開口106A及106B係圓的並具有介於1 mm至10 mm之間的直徑D
1。在某些實施例中,D
1在垂直厚度T
1上係實質上均勻的。
Figure 1D shows an enlarged isometric view of
在說明性的實施例中,開口106A、106B及106C係沿著直徑(沿著X方向)間隔開一距離S
1。在某些實施例中,相鄰的開口106A、106B及106C係彼此等距的。例如,開口106A及106B係間隔開一距離S
1,且開口106B及106C亦間隔開一距離S
1,S
1可介於0.2 cm與10 cm之間。在某些實施例中,相鄰對的開口(例如,106A及106B、以及106B及106C)之間的間隔可以不一致。部分117內開口106A、106B及106C的放置可設計為用於在其中可容納排氣監測設備101之外殼內特定位置處的測量。在說明性的實施例中,開口106A可在收集器104的軸心處(沿著Z方向)。
In the illustrative embodiment,
在某些實施例中,開口108A、108B及108C具有正交於周邊支撐架102之縱軸(沿著Y方向)的定向。在某些實施例中,複數開口108從側壁面104C延伸至側壁面104D。如圖所示,開口108跨收集器元件104的橫向厚度T
2延伸。開口108A的第一端係配置以吸入氣體且開口108A的相對端係配置以耦接至感測管(未顯示)。然而,如同將於以下討論的(圖3E中),感測管的放置係至少部分地取決於氣流的方向。在說明性的實施例中,開口108A及108B係圓的並具有直徑D
2,D
2可介於1 mm與10 mm之間。在某些實施例中,D
2在橫向厚度T
2上係實質上均勻的。在某些實施例中,D
2與D
1係實質上相等。
In certain embodiments,
在說明性的實施例中,開口108A、108B及108C係沿著直徑(沿著X方向)間隔開一距離S
2。在某些實施例中,相鄰的開口108A、108B及108C係彼此等距的。例如,開口108A及108B係間隔開一距離S
2,且開口108B及108C亦間隔開一距離S
2,S
2可介於0.2與10 cm之間。在某些實施例中,相鄰對的開口108(例如,108A及108B、以及108B及108C)之間的間隔可以不一致。部分117內開口108A、108B、及108C的放置可設計為用於在其中可容納排氣設備之外殼內特定位置處的測量。
In the illustrative embodiment,
開口108A與相鄰開口106B或106C之間的最小間隔係防止交會的間隔。在某些實施例中,該間隔係至少1 mm。在其他實施例中該間隔可小於1 mm但大於0.1 mm。其中將例如開口106A之垂直開口放置在例如開口108C及108B的一對橫向開口之間的配置乃確保垂直開口不與橫向開口交會。如此,介於1 mm之間但大於0.1 mm的最小間隔足以防止垂直開口與橫向開口之間的交會。The minimum spacing between
在圖1D中,T
1在垂直厚度T
1上係實質上均勻的。在其他實施例中,如同在圖1E中的結構119中所繪示的,收集器元件104具有較底面104B為寬的頂面104A。結構119具有收集器元件104(圖1D中所繪示的)之部分117的一或更多性質,例如橫向開口108及垂直開口106。結構119具有相較於頂面104A較窄的底面104B,而有利於減少底面104B的截面總面積。底面104B之減少的截面總面積降低容納周邊支撐架之管內的淨氣體阻抗。在某些實施例中,底面104B具有小於頂面104A之面積約25%~65%的面積。如圖所示,底面104B具有小於頂面104A之橫向厚度T
2的橫向厚度T
3。在某些實施例中,T
3實質上等於或大於開口106A及106B的直徑D1。
In Figure 1D, T1 is substantially uniform across the vertical thickness T1 . In other embodiments, as illustrated in
在某些實施例中,周邊支撐架102可包括一或更多收集器元件以促進沿著氣流之方向之多個位置處的流速測量以及壓力測量。再次參考圖1C,周邊支撐架102進一步包括在環結構116之直徑之相對端上的一對垂直支撐柱118A及118B(此後稱為支撐柱118A及118B)。在某些實施例中,支撐柱118A及118B遠離圓環結構116延伸。在某些實施例中,如圖所示,額外的收集器元件120與支撐柱118A及118B耦接。In certain embodiments, the
在某些實施例中,收集器元件120具有關於(圖1D及1E)所描述之收集器元件104的一或更多特徵。在說明性的實施例中,收集器元件120具有收集器元件104(關於圖1E所描述的)的一或更多特徵,例如垂直及橫向厚度、形狀等。在其他實施例中,收集器元件120可具有相較於收集器元件104不同的垂直及橫向厚度,分別為T
1及T
2。在某些實施例中,收集器元件120包括複數開口122及124。在示例性的實施例中,複數開口122之空間上排列係與複數開口106實質上相同。在某些實施例中,複數開口124之空間上排列係與複數開口108實質上相同。在某些實施例中,如圖所示,收集器元件104可在收集器元件120上方並與之平行。收集器元件120可位於收集器元件104下方以提供於大約相同但沿著縱軸(圖C中z軸)分開之徑向位置處的壓力測量。於相同徑向位置處的壓力測量係較佳的以獲得與縱軸實質上平行之流速的測量。如圖所示,當收集器元件104在收集器元件120上方並與之平行時,亦可降低對跨周邊支撐架102之長度(沿著Z方向)之氣流的淨阻抗。
In certain embodiments,
在某些實施例中,收集器元件104及120係垂直地彼此分開一距離S
3。在某些實施例中,S
3介於5 cm與100 cm之間。在某些實施例中,S
3介於15 cm與30 cm之間。在某些如此的實施例中,無論S
3之長度為何,電路板112都會保持如圖1B中所示。如圖1B中所示,會將感測器管110B縮短或延伸以到達收集器元件120。參考圖1C,在實施例中,S
3可取決於直徑D
R。在某些實施例中,較大的D
R可關聯於較大的S
3。在3吋與9吋之間範圍變化的D
R可關聯於在5 cm至50 cm之範圍內的S
3。在9吋至18吋之間範圍變化的D
R可關聯於在50 cm至100 cm之範圍內的S
3。在其他實施例中,在3吋與9吋之間範圍變化的D
R可關聯於在5 cm至10 cm之範圍內的S
3。
In some embodiments,
在某些實施例中,周邊支撐架102可由聚氯乙烯(PVC)等聚合物製成。在實施例中,可繪製並可3D列印周邊支撐架102的設計。在某些實施例中,周邊支撐架102進一步包括從環結構116橫向延伸的複數轉板132。顯示四個轉板,但如此轉板132的數量可隨著環結構116的直徑變化。轉板132的每一者包括用於將環結構116固定至管(如本文中所討論的)的各別開口134。在某些實施例中,周邊支撐架102具有二個轉板。在某些實施例中,周邊支撐架102具有三個轉板。在某些實施例中,周邊支撐架102具有超過四個轉板。In some embodiments,
在說明性的實施例中,如以下將討論的,支撐柱118A及118B進一步包括促進使用外部壓力測量工具之氣體壓力測量的各別開口136。如圖所示開口136可為圓的。依據某些實施例,開口136可具有介於1 mm與10 mm之間的直徑。In the illustrative embodiment, as will be discussed below,
圖1F繪示圖1B中排氣監測設備101之部分125的放大等角視圖。在實施例中,感測器管110A係耦接在開口106C與壓力感測器114的第一噴嘴114A之間。在某些實施例中,壓力感測器114係差壓感測器。在某些實施例中,差壓感測器114測量沿著氣流之路徑的兩不同點之間的壓力差。該兩點可位在例如收集器元件104及收集器元件120(如圖1B中所示)的兩不同收集器處。可藉由使用感測器管110A及110B的壓力感測器114來測量壓力差。在說明性的實施例中,感測器管110B係耦接在壓力感測器114的第二噴嘴114B與收集器元件120中的開口(在圖1F中看不見但例如可在圖1A中見到)之間。FIG. 1F illustrates an enlarged isometric view of
可將沿著流動方向(圖1F中的z方向)進入感測器管110A及110B的氣體用於利用壓差及氣體密度而估計流速。可從流速及流動截面積計算流率而無需流量計(參見圖3C)。收集器元件104中的複數感測點結合二或更多差動感測器亦可用於獲得氣體速度輪廓。可利用氣體速度輪廓改善流率計算準確度。Gas entering
在某些實施例中,差壓感測器使用伯努利方程式(Bernoulli’s equation)以測量管中氣體的流量。差壓感測器在管中引入收縮而產生跨管內兩點的壓降。壓降係差壓感測器之上游側與下游側之間壓力的差。當流量增加時,產生較大的壓降。脈衝管路將差壓感測器之上游與下游壓力路由至測量節流器之上游與下游側中壓力差的壓力計管。所測量之壓力的差(即,壓差)係用於判定流率。在其他實施例中,壓力感測器114係絕對壓力感測器。不像差壓感測器,絕對壓力感測器測量單點處相對於校準真空位準的壓力。在說明性的實施例中,感測器管110A及110B提供於兩不同收集器位置處之兩點處壓力的測量。將可理解的是,感測器管110A及110B可各具有不同的長度而不會對測量的準確度產生不利影響。在某些實施例中,諸多感測器管的長度可相差高達50%。In some embodiments, the differential pressure sensor uses Bernoulli’s equation to measure the flow of gas in the tube. A differential pressure sensor introduces a contraction in the tube to produce a pressure drop across two points within the tube. Pressure drop is the difference in pressure between the upstream and downstream sides of a differential pressure sensor. When the flow rate increases, a larger pressure drop occurs. The pulse line routes the upstream and downstream pressures from the differential pressure sensor to a manometer tube that measures the pressure difference in the upstream and downstream sides of the restrictor. The difference in measured pressure (i.e., differential pressure) is used to determine flow rate. In other embodiments,
圖1G繪示圖1B中排氣監測設備101之部分127的放大等角視圖。在說明性的實施例中,感測器管110C係耦接在收集器元件120的開口124A與壓力感測器128的噴嘴128A之間。在其他範例中,可將感測器管110C耦接在開口122A之上端(隱藏的)與壓力感測器128的噴嘴128A之間。FIG. 1G illustrates an enlarged isometric view of
如圖所示,感測器管110C係連接至開口124A的背側。在某些實施例中,壓力感測器128係差壓感測器。在其他實施例中,壓力感測器128係絕對壓力感測器。將可理解的是,感測器管110C可具有相較於感測器管110A及110B(圖1F中)之長度的不同長度。如同以下將於圖3H中討論的,可藉由耦接至相同開口但至不同壓力感測器而執行不同感測器管(例如,110A、110B及110C)之間的校準。As shown,
依據本發明的某些實施例,圖2A繪示圖1B之排氣監測設備101的等角視圖。圖2A係排氣監測設備101之背側的等角視圖。如圖所示,電路板係安裝在周邊支撐架102的支撐板130上。在說明性的實施例中,支撐板130包括與環結構116耦接的一對延伸130A及130B。延伸130A及130B係設計以提供用於電路板112的機械支撐並包括與周邊支撐架之材料相同的材料。如圖所示,電路板112係定位在環結構116內以防止電路板112的元件接觸將周邊支撐架102設計以容納進去的管。FIG. 2A illustrates an isometric view of the exhaust
排氣監測設備101係設計以在用於測量腐蝕性副產物之氣體性質的環境中操作。如此,有需要保護電路板112及例如壓力感測器114及無線傳輸器126之內部元件免受操作期間排氣監測設備101可能曝露於其中的腐蝕性副產物之傷害。The
圖2B係具有排氣監測設備101(圖2A中)之所有特性的排氣監測設備200的等角視圖。圖2B顯示圖2A中的電路板112被包裹在樹脂202中。在某些實施例中,樹脂202可包括具絕緣性且不與腐蝕性氣體反應的聚合物塗層。依據某些實施例,樹脂202可為高達1毫米的厚度。Figure 2B is an isometric view of the exhaust gas monitoring device 200 having all the features of the exhaust gas monitoring device 101 (in Figure 2A). FIG. 2B shows the
圖3A係設計以改裝諸如排氣監測設備101(關於圖1A~1F所描述的)之設備的管結構300(例如,排氣管道或管)的等角視圖。如圖所示,管結構300包括圓柱管302。在某些實施例中,管302具有圓形截面以允許層流以獲得最佳氣流。取決於應用之處,管302可具有介於2吋及10吋之間的直徑。在某些實施例中,管結構300進一步包括附接至管302之端308的安裝架304。在某些實施例中,安裝架304係設計以耦接至設備(像是例如上述的排氣監測設備101)。在某些實施例中,安裝架304包括複數螺栓孔306以促進與排氣監測設備101(以上所述)的耦接。在實施例中,當管302包括金屬構造時,可將安裝架304熔接至管302的外表面上。在其他實施例中,無論管302的材料為何,都將安裝架304製造為管結構300的部件。管302可進一步包括至少一開口,例如開口307,以測量管之周邊處的壓力。可將感測器管(未顯示)的一端附接至開口307並可將另一端附接至位於管302外部的壓力感測器。在說明性的實施例中,管302包括實質上全然分開的兩開口307。在如此實施例中,開口307可促進於管302的兩實質上截然相反端之處的同時壓力測量。Figure 3A is an isometric view of a pipe structure 300 (eg, an exhaust duct or tube) designed to retrofit a device such as exhaust monitoring device 101 (described with respect to Figures 1A-1F). As shown, tube structure 300 includes
圖3B係設備320的等角視圖,設備320包括與管結構300在端308處耦接的排氣監測設備101。設備320可為設計以測量來自基板處理系統(像是例如基板處理系統100)之排氣之氣體速度的在線氣體監測系統的範例。在說明性的實施例中,排氣監測設備101的環結構116係圓形的並坐落於安裝架304上。如圖所示,排氣監測設備101之個別的轉板132係使用螺栓309固定至各螺栓孔306(在圖式中看不見)。在某些實施例中,將支撐柱118A及118B限制在環結構116內。在實施例中,支撐柱118A及118B內的開口136係與管302中的開口307(如圖3A中所示)對準。開口136與307之間的對準促進操作期間管302中氣體壓力的外部測量。可將例如絕對壓力感測器的外部壓力測量工具經由管耦接至開口307。可藉由各別的管將流入在各別支撐柱118A及118B中之開口136的氣體引導至各別的絕對壓力感測器。使用遠離開口136之測量工具在開口136附近之壓力的測量構成管302中氣體壓力的外部測量。應理解的是,支撐柱118A及118B可與管302的側壁接觸。如此,支撐柱118A及118B的表面可匹配管302的曲率。支撐柱118A及118B與管302之間匹配的曲面可實現無間隙的平齊接觸。在某些實施例中,開口136及307可為圓形,其中開口136的直徑小於開口307的直徑。較小直徑可確保外部管可無間隙地被固定以防止來自開口307之氣體的流失。FIG. 3B is an isometric view of device 320 including
在某些實施例中,環結構116具有與管302之內徑D
T相同或實質上相同的內徑D
I。在某些實施例中,當D
I大於或等於D
T時則環結構116不阻礙氣流,儘管收集器元件104及120本身乃部分地阻礙氣流。
In certain embodiments,
在其中D
I小於D
T的實施例中,支撐柱118A及118B可不與管302的側壁接觸。在某些如此的實施例中,與絕對壓力感測器耦接的外部管將在管302的內部中突出。
In embodiments where DI is less than DT , support posts 118A and 118B may not contact the sidewalls of
圖3C繪示設備330的截面平面圖。設備330係在線氣體監測系統(圖3B)的範例而進一步包括複數感測器管(例如感測器管110A、110B等)。如圖所示,管302具有在管302之內側壁302A內的截面積A
T。如圖所示,收集器元件104具有面積A
CE,且支撐板130具有有效表面積A
SP。藉由收集器元件104以及用於電路板(看不見)及感測器管(例如,110A及110B)之支撐板130的存在而阻礙管302內的氣流。
Figure 3C illustrates a cross-sectional plan view of
氣體流經管302的開口面積係由A
T與A
SP及A
CE之和兩者間的差以及感測器管(例如感測器管110A、110B等)的有效表面積來給定。針對A
CE有需要盡可能地小以促進流量資料的收集但要大到足以為實體地剛性。應理解的是,收集器元件104具有與收集器元件120(在圖式中看不見)實質上相同的平面圖截面圖以最小化穿過管302之氣流的任何減少。收集器元件120係在收集器元件104正下方以提供於相同徑向位置處(儘管沿著與圖式之平面正交的縱軸分離)的壓力測量。於相同徑向位置處的壓力之測量可較佳為獲得流速測量。當收集器元件120相對於收集器元件104偏移時,則整體流量減少可能更大,因為開口面積的差A
T- (A
SP+ A
CE)減少了。然而,在某些實施例中,收集器元件120相對於收集器元件104偏移高達等同於管302之一半內徑(圖3B中的D
T)的距離。
The opening area of the
支撐柱118A及118B係看不見的而係在收集器元件104的正下方。在示例性的實施例中,支撐柱118A及118B沒有增加超過收集器元件104的截面積。Support posts 118A and 118B are invisible and tied directly beneath
應理解的是,管結構300內排氣監測設備101的存在在穩態流動擾流條件下阻礙氣流少於5%。氣流的減少亦為氣體溫度的函數。然而,對小於攝氏25度的氣體溫度而言,可能觀察到少於5%的流量減少。It will be appreciated that the presence of the exhaust
圖3D為在例如排氣監測設備101的設備中測量氣體壓力的方法340。Figure 3D is a
方法340藉由流動氣體進入管中而開始於操作341,其中該流動致使氣體進入管內排氣監測設備之收集器元件之開口的第一端。方法340藉由迫使進入開口的氣體被引導進入耦接在開口之第二端處的感測器管中而續行於操作342。第二端係相對於第一端。藉由來自在管中流動之氣體的正壓而將氣流維持在感測器管中。將氣體引導至壓力感測器。方法340藉由使用壓力感測器以進行在感測器管中流動之氣體的壓力之測量而結束於操作343。
依據某些實施例,圖3E係繪示設備350之操作的示意圖,設備350包括關於圖3B所述之管302內的排氣監測設備101。在實施例中,排出氣體,例如氣體351(使用箭頭指示)在管302內流動並進入收集器120及104中的一或更多開口。在某些實施例中,氣體351經過收集器120的開口122A、進入感測器管110C的入口並被引導至壓力感測器128。管302內的正壓維持氣體351在感測器管110C中正y方向上的流動。正壓確保某些流入開口122A之一端352的氣體351持續流入耦接至開口122A之相對端353的感測器管110C中。壓力感測器128感測衝擊內部感測元件的氣體351並測量管110C內氣體351的壓力。因為感測器128靠近開口122A,故開口122A為大約的測量位置。在實施例中,因為有氣體351在感測器管110C中的持續流動而促進藉由壓力感測器128之氣體壓力的動態測量(或即時連續測量)。在實施例中,因為氣體351經由感測器128內開口(未顯示)從壓力感測器128出去而達成感測器管110C內的持續流動。Figure 3E is a schematic diagram illustrating the operation of
氣體351亦經過收集器104中的開口106A、進入感測器管110A的入口並被引導至壓力感測器114。氣體351流入開口106A的一端354而流入耦接至開口106A之相對端355的感測器管110A。管302內的正壓確保氣體351持續在感測器管110A內流動。壓力感測器114感測衝擊內部感測元件的氣體351並測量在感測器管110A內流動之氣體351的壓力。因為壓力感測器114靠近開口106A,故開口106A為大約的測量位置。在實施例中,只要有氣體351在管110A中的持續流動便促進壓力感測器114處的氣體壓力之動態測量(或即時連續測量)。因為氣體351經由感測器114內開口(未顯示)從壓力感測器114出去而達成持續流動。在示例性的實施例中,開口106A及122A位於排氣監測設備101的軸心處。收集器元件104及120之軸心處的開口可實現在管302內流動之氣體351之最大壓力的偵測。在其中於圓柱管302中存在層流的實施例中,氣體351的最大流速係在圓柱管302的軸心處。在某些如此的實施例中,最大流速相關於最大壓力。
在說明性的實施例中,開口106A及122A兩者係沿著相同方向(z方向)定向。此舉使壓力感測器114及128能夠測量在實質相同方向(例如圖式中的z方向)上流動之氣體351的分量。收集器元件120與收集器元件104之間的垂直間隔S
3可足以允許氣體351之實質上垂直分量進入開口106A。如以上所討論的,S
3可為管302之直徑(圖3B中的D
T)的函數。
In the illustrative embodiment,
在說明性的實施例中,開口106A及122A係分別在收集器元件104及120中的各別的一對開口。如圖所示,開口106A及122A係垂直地或實質上垂直地對準。在某些如此的實施例中,沿著收集器元件104及120而不在軸心處的其他對開口(例如122AB及106AB-未顯示)亦垂直地或實質上垂直地對準。在收集器元件104中的一群開口106中的各別開口與在收集器元件120中的一群開口122中的各別開口之間的垂直對準(例如圖1C中所繪示的)可有助於提供分隔相同距離S
3之一群成對開口的相關壓力測量。如此相關壓力測量可有助於提供沿著管302之直徑的壓力測量輪廓。
In the illustrative embodiment,
開口122A及106A之間壓力的差可實現氣體流速的測量。分別耦接至開口122A及106A的壓力感測器128及114之間壓力測量的差係可直接用於計算流速。在某些實施例中,可藉由電路板112完成計算。在某些實施例中,可將來自各壓力感測器128及114的資料傳輸至管302外部的電腦以用於流速計算。在某些實施例中,可利用偵測到的壓力測量的差基於以下公式(1)來計算流速:The difference in pressure between
V 2=2[P 2-P 1]/rho (1) V 2 =2[P 2 -P 1 ]/rho (1)
其中V為流速,P
1及P
2分別為開口122A及106A處的壓力讀數,且rho為在管302中流動之氣體的密度(或不同氣體分量的加權密度)。在一範例中,於計算中可利用在標準溫度及壓力(STP)下之氮的密度。在實施例中,速度係於開口122A與106A之間計算的平均流速。
where V is the flow rate, P 1 and P 2 are the pressure readings at
在某些實施例中,可從測試設置中獲得氣體流速,於測試設置中可於基座處將管302附接至能夠產生校準氣體(例如,N
2或空氣)之流動的風扇。可變化校準氣體的流速以協助測量針對給定管尺寸之一定範圍的流速。可利用流速資訊以實施用於實現氣流的正確風扇尺寸(例如用於實現氣體之每分鐘特定立方流量的風扇速度)。評估準確的風扇尺寸可排除例如圖1A中所繪示的該些系統內排氣管線中不必要的較大排氣風扇之實施。準確評估可有助於降低成本、防止長的維護停機時間以及在其中可利用較小排氣風扇來替代較大者的系統內節省空間。
In some embodiments, the gas flow rate can be obtained from a test setup in which the
在某些實施例中,如同圖3F中所繪示的,可將感測器管110D耦接至收集器元件120內的橫向開口124A。在某些如此的實施例中,氣體351於端356處沿著橫向開口124A進入並於端357處進入管110D。壓力測量的方法係與關於圖3E所述之壓力測量的方法實質上相同。在某些如此的實施例中,可藉由於開口124A處測量壓力而計算氣體351的橫向流速(沿著y方向)。In certain embodiments,
在某些實施例中,如同圖3G中所繪示的,可將感測器管110A與第二噴嘴128B(隱藏在噴嘴128A後面)耦接。在某些實施例中,壓力感測器128可為測量及比較來自兩點之壓力讀數的差壓感測器。在某些實施例中,可將壓力讀數傳輸至外部輸入裝置(例如微控制器)。在某些實施例中,可將從兩不同端352及354獲得的壓力讀數從壓力感測器傳輸至電路板112內或電路板112外部的計算方塊以計算流速。在其他實施例中,壓力感測器128係具有兩輸入噴嘴128A及128B的絕對壓力感測器。可從獲得自兩不同開口106A及122A和輸入噴嘴128A及128B的壓力讀數中對流速測量進行計算。In some embodiments, as illustrated in Figure 3G,
在另一實施例中,如同圖3H中所繪示的,感測器管110C(於圖3E中顯示的)係進一步與例如感測器管110E的額外感測器管耦接。在說明性的實施例中,感測器管110E係耦接在感測器管110C與壓力感測器114之間。感測器管110E提供氣體351進入開口122A的額外途徑以流動至例如壓力感測器114的額外壓力感測器。在說明性的實施例中,進入開口122A的氣體351可同時地流動至壓力感測器114及128。因為感測器管110E具有相較於感測器管110C的較長路徑長度,使用壓力感測器114及128的同時壓力測量可提供於例如開口122A之端352處的單一測量位置處跡察壓力差(若有的話)的手段。如此測量可提供壓力測量對於感測器管之長度的靈敏度而可用於校準壓力感測器114及128。In another embodiment, as illustrated in Figure 3H,
關於圖3E~3H描述的設備350提供動態測量壓力及計算管302內流速的方式。再次參考圖3C,可將複數感測器管耦接在各壓力感測器與沿著收集器元件104及120(看不見)之長度分佈的複數開口中的各開口之間。在某些如此的實施例中,可選擇相應於各收集器元件104及120上之開口的一對測量位置以提供平行於縱軸(z方向)之速度的測量。沿著收集器元件104及120之整體長度的一群成對測量位置可用於獲得壓力輪廓測量。可從壓力輪廓測量中計算跨管302的速度輪廓測量。在說明性的實施例中,收集器104係沿著管302的直徑定位以提供管302內的最大測量範圍。The
雖然如圖3E~3H中所示,工具及排氣係位於彼此的相對端處,但可反轉工具及排氣相對於收集器元件104及120的定向。在反轉的配置中。氣體351將被引導在負z方向上。再次參考圖3E,在某些如此的實施例中,可將管110A及110C分別地插入端354及352中以測量在相反方向(-z方向)上流動的氣體351。Although the tool and exhaust are located at opposite ends of each other as shown in Figures 3E-3H, the orientation of the tool and exhaust relative to
圖3I係藉由使用排氣監測設備101而測量管302(圖3B)中一或更多氣流性質之方法360的流程圖。在實施例中,管302可為排氣管道。方法360藉由經由排氣監測設備的第一收集器元件中之第一開口及第二收集器元件中之第二開口吸入氣體而開始於操作361。第一收集器元件及第二收集器元件在排氣管道內分隔一距離。方法360藉由將氣體從第一開口及第二開口輸送至位於排氣管道內的一或更多壓力感測器而續行於操作362。 方法360藉由利用第一感測器管將氣體從第一開口傳輸至一或更多壓力感測器並測量第一感測器管內的第一壓力而續行於操作363。操作364繼續藉由利用第二感測器管將氣體從第二開口傳輸至一或更多壓力感測器並測量第二感測器管內的第二壓力。方法360藉由輸出至少部分基於由一或更多壓力感測器測量之第一壓力及第二壓力的壓力讀數而結束於操作365。在某些實施例中,方法360沒有在365處結束,可基於所獲得的壓力讀數來執行一或更多額外的計算。雖然在圖3I中未顯示,但在某些實施例中,可將其他感測器耦接至第一及第二感測器管以獲得例如溫度的其他氣流特性。Figure 3I is a flow diagram of a method 360 of measuring one or more airflow properties in tube 302 (Figure 3B) by using
在某些實施例中,方法360進一步包括基於第一壓力、第二壓力、及氣體之密度的預定值而計算流速。在某些實施例中,可跳過、重新排列、或省略方法360的一或更多操作。儘管此處的範例主要係針對排氣監測,但這並不排除待於其他應用中使用的在線氣流監測系統或排氣監測設備。In some embodiments, method 360 further includes calculating the flow rate based on the first pressure, the second pressure, and the predetermined value of the density of the gas. In some embodiments, one or more operations of method 360 may be skipped, rearranged, or omitted. Although the examples here are primarily for exhaust monitoring, this does not exclude the use of online airflow monitoring systems or exhaust monitoring equipment for use in other applications.
圖4A繪示包括排氣監測設備101、及與管302耦接之阻尼器402之在線氣體監測設備400的簡化截面圖。為清楚起見,移除感測器管及壓力感測器。如圖所示,可將阻尼器402實施以控制管302內氣體408的總體積及流量。在某些實施例中,阻尼器402包括轉子404及與轉子404耦接的葉片406。如圖所示,轉子404沿著葉片406的中心線(在x方向上)及沿著管302的直徑延伸。在某些實施例中,轉子404可平行於收集器元件102或104延伸。在某些實施例中,轉子404可繞著葉片406的軸執行完整的360度旋轉(用角度θ表示)。360度旋轉可實現經過管302之氣流的精細控制。在某些實施例中,轉子404及葉片406具有小於收集器元件104或120任一者之橫向厚度T
4的厚度T
B。因此,當葉片406的表面406A係定向為與管302之內側壁302A平行時,阻尼器將對管302內的氣流幾乎沒有影響。在某些實施例中,葉片406可具有圓形平面表面積(在圖式中正交於管302的縱軸或z軸)以有效地提供阻尼。在某些如此的實施例中,轉子404可沿著管302的直徑延伸,但必須與收集器元件120或104平行。當葉片406為圓形時,葉片406可具有小於管302之直徑D
T的直徑D
RO。在某些實施例中,D
RO較D
T小5%~25%之間。在其他實施例中,針對最大阻尼,D
RO係實質上等於D
T。在某些實施例中,阻尼器402係沿著Y軸旋轉的風扇並控制管302內沿著Z軸的氣流。
FIG. 4A shows a simplified cross-sectional view of an online
在某些實施例中,阻尼器402與收集器元件120垂直地分離一分隔距離S
DC。在說明性的實施例中,S
DC代表轉子404與收集器元件120之間的距離。分隔S
DC提供其中阻尼器不發生與排氣監測設備101接觸的安全操作距離。分隔至少大於直徑D
RO的一半。在某些實施例中,S
DC介於3 cm與30 cm之間。
In certain embodiments, the
在某些實施例中,藉由在線氣體監測設備400外部的控制器控制阻尼器402。在某些實施例中,可藉由排氣監測設備101的電路板112控制阻尼器402。In some embodiments, the
如同圖4B中所繪示的,可在基板處理系統410內實施阻尼器402。在某些實施例中,基板處理系統410包括基板處理系統100(圖1A中繪示的)的一或更多組件。在說明性的實施例中,排氣管線107A~107F每一者皆包括阻尼器,像是例如阻尼器402A、402B、402C、402D、402E及402F(402A~402F)。在實施例中,藉由在每一各別排氣管線107A~107F內的排氣監測設備101而在排氣管線107A~107F的每一者內監測壓力。可藉由以上概述的方法而計算排氣管線107A~107F內氣體的流速。可從壓力的動態測量中動態地計算流速。可互相比較每一排氣管線107A~107F內的流速。若有需要,可藉由旋轉各別阻尼器402A~402F而改變在排氣管線107A~107F之一或更多者中的流速。例如,各別阻尼器402A~402F之旋轉可增加或減少各別排氣管線107A~107F內的氣體流速。在某些實施例中,氣流的增加或減少可達到藉由與排氣管線107A~107F耦接的各別排氣風扇及阻尼器之旋轉角度判定的最大或最小位準。如此,可將任何的阻尼器402A~402F動態地調整至每一排氣管線107A~107F內所需的設定點。As illustrated in Figure 4B,
儘管在排氣管道中氣體監測的脈絡中描述本揭示內容的實施例,但本揭示內容中所述的排氣監測設備之應用並不限於如此用途。在某些實施例中,可將排氣監測設備的一或更多實施例用於半導體製造設備內的其他氣流管道或管。在某些實施例中,可將排氣監測設備的一或更多實施例用於製造廠各處的其他氣流管道。在某些實施例中,排氣監測設備係輕量的並配置以與製造廠內的其他監測裝置通訊。Although embodiments of the present disclosure are described in the context of gas monitoring in exhaust ducts, applications of the exhaust gas monitoring devices described in this disclosure are not limited to such uses. In certain embodiments, one or more embodiments of the exhaust monitoring device may be used with other gas flow ducts or tubes within semiconductor manufacturing equipment. In certain embodiments, one or more embodiments of the exhaust monitoring device may be used in other gas flow ducts throughout the manufacturing plant. In some embodiments, the exhaust monitoring equipment is lightweight and configured to communicate with other monitoring devices within the manufacturing plant.
依據本揭示內容的某些實施例,圖5繪示位於電路板112上之控制器系統500的方塊圖。控制器系統500包括輸入控制器501、功率方塊502、微控制器方塊503、感測器方塊504、及輸出控制器505。圖1B中繪示的電路板112可包括輸入控制器501及輸出控制器505。在某些實施例中,輸入控制器501包括用以接收輸入信號的介面。可藉由例如通用匯流排(USB)相容介面、I2C、雷霆介面(Thunderbolt)、串列介面、平行介面等的任何合適介面來接收輸入信號。在某些實施例中,輸入控制器501指示功率方塊502提供特定量的功率至控制器系統500的諸多方塊。在其他實施例中,可將輸入控制器501用於下載一或更多程式至微控制器方塊503。在某些實施例中,微控制器方塊503包括或耦接至無線電路(未顯示)。無線電路可允許微控制器方塊503與例如伺服器、另一無線裝置等的其他裝置通訊。如此,可從微控制器方塊503無線地提取壓力讀數及/或計算。在某些實施例中,可藉由微控制器方塊503校準壓力感測器114及128。依據某些實施例,可無線地或藉由有線裝置提取用於校準壓力感測器114、及128的指令。FIG. 5 illustrates a block diagram of a
在某些實施例中,功率方塊502包括DC-DC轉換器、線性轉換器(例如,低壓降調節器)、或任何其他合適的電壓調節器。在某些實施例中,功率方塊502可依據不同方塊的規格而提供不同功率位準至不同方塊。在某些實施例中,功率方塊包括可充電電池或備用電池以在缺少輸入功率的情況下操作控制器系統500。在某些實施例中,微控制器方塊503包括任何合適的處理器及/或相關聯的組件以處理使用感測器方塊504之讀數。In some embodiments,
在某些實施例中,微控制器方塊503包括參考圖6描述的處理器系統。參考圖5,在某些實施例中,感測器方塊504包括一或更多感測器。在某些實施例中,一或更多感測器包括絕對壓力感測器及/或差壓感測器。在某些實施例中,一或更多感測器包括溫度感測器。來自一或更多感測器的讀數係提供至微控制器方塊503以用於處理。然後經由輸出控制器505將讀數傳輸至另一裝置。在其他實施例中,可將微控制器方塊503程式化以執行例如比較來自不同壓力感測器(例如圖3E中的壓力感測器114及128)之壓力讀數及計算流速的測量。然後微控制器方塊503可傳輸流速資訊至輸出控制器505。在某些實施例中,微控制器方塊503係配置以調整一或更多感測器的靈敏度。在某些實施例中,輸出控制器505包括有線及/或無線裝置以與外部裝置通訊。在某些實施例中,可在一或更多方塊中重新表徵控制器系統500的諸多組件。In some embodiments,
依據某些實施例,圖6繪示具有機器可讀儲存媒體的處理器系統600,機器可讀儲存媒體具有當執行時致使在排氣監測設備101之電路板中的微控制器(例如,圖5中的微控制器方塊503)測量及報告氣體性質的指令。可將本揭示內容的諸多實施例中所描述的製程儲存在機器可讀媒體(例如,603)中作為電腦可執行指令。在某些實施例中,處理器系統600包含如圖所示耦接在一起的記憶體601、處理器602、機器可讀儲存媒體603(亦稱為有形機器可讀媒體)、通訊介面604(例如,無線或有線介面)、及網路匯流排605。在某些實施例中,系統600的諸多組件可為微控制器方塊503的部件。According to certain embodiments, FIG. 6 illustrates a
在某些實施例中,處理器602為數位訊號處理器(DSP)、特殊應用積體電路(ASIC)、通用中央處理單元(CPU)、或實施簡單有限狀態機以執行本文所述諸多製程的低功率邏輯。In some embodiments,
在某些實施例中,處理器系統600的諸多邏輯方塊係經由網路匯流排605耦接在一起。可使用任何適當的通訊協定來實施網路匯流排605。在某些實施例中,機器可讀儲存媒體603包括用於測量氣體壓力和氣流及/或控制在如上參考諸多實施例描述的測量設備內之阻尼器的指令(亦稱為程式軟體碼/指令)。In some embodiments, the logic blocks of
在一範例中,機器可讀儲存媒體603係具有用於測量氣體壓力和氣流及用於報告所測量氣體壓力之指令的機器可讀儲存媒體(此後稱為機器可讀媒體603)。機器可讀媒體603具有當執行時致使處理器602執行如參考諸多實施例所討論的測量及/或報告之方法的機器可讀指令。In one example, machine-
可將關聯於諸多實施例的程式軟體碼/指令實施為作業系統或特定應用程式之部分、組件、程式、物件、模組、子程式、或其他指令之序列或指令之序列之組織而被稱為「程式軟體碼/指令」、「操作系統程式軟體碼/指令」、「應用程式軟體碼/指令」、或簡稱為「軟體」,或者實施為嵌入處理器中的韌體。在某些實施例中,關聯於諸多實施例之製程的程式軟體碼/指令係由處理器系統600執行。Programming software code/instructions associated with various embodiments may be implemented as a portion of an operating system or a particular application, a component, a program, an object, a module, a subroutine, or other sequence of instructions or an organization of a sequence of instructions. is "programming code/instructions", "operating system software code/instructions", "application software code/instructions", or simply "software", or is implemented as firmware embedded in a processor. In some embodiments, software code/instructions associated with processes of various embodiments are executed by
在某些實施例中,機器可讀儲存媒體603係電腦可執行儲存媒體603。在某些如此的實施例中,關聯於諸多實施例的程式軟體碼/指令係儲存在電腦可執行儲存媒體603中並由處理器602執行。於此處,電腦可執行儲存媒體603係可用於儲存當藉由計算裝置執行時致使一或更多處理器(例如,處理器602)執行製程的程式軟體碼/指令及資料的有形機器可讀媒體603。In some embodiments, machine-
有形機器可讀媒體603可包括在諸多有形位置中的可執行軟體程式碼/指令及資料的儲存器,包括例如ROM、揮發性RAM、非揮發性記憶體及/或快取及/或如同在本申請案中參考的其他有形記憶體。可將部分的此程式軟體碼/指令及/或資料儲存在這些儲存器及記憶體裝置的任一者中。在某些實施例中,可從其他儲存器中獲取程式軟體碼/指令,包括例如經由集中式伺服器或同級間網路或其相似者,包括網際網路。可於不同時間及在不同通信對話中或在相同通信對話中獲取不同部分的軟體程式碼/指令及資料。Tangible machine-
可在各別軟體程式或應用的執行之前整體地獲取關聯於諸多實施例之軟體程式碼/指令。可替代地,當需要執行時可動態地(例如及時)獲取部分的軟體程式碼/指令及資料。可替代地,藉由範例的方式,可產生獲取軟體程式碼/指令及資料之此些方式的某些組合,例如,針對不同應用、組件、程式、物件、模組、子程式或其他指令之序列或指令之序列之組織。因此,不要求資料及指令於特定實例的時間完整地在有形機器可讀媒體603上。Software code/instructions associated with various embodiments may be retrieved in their entirety prior to execution of the respective software program or application. Alternatively, portions of the software code/instructions and data may be retrieved dynamically (eg, in real time) when required for execution. Alternatively, by way of example, some combination of these ways of obtaining software code/instructions and data may be generated, e.g., for different applications, components, programs, objects, modules, subroutines, or other instructions. The organization of a sequence or sequence of instructions. Accordingly, there is no requirement that the data and instructions be entirely on tangible machine-
有形機器可讀媒體603的範例包括但不限於可記錄及不可記錄型式的媒體,例如揮發性及非揮發性記憶體裝置、唯讀記憶體(ROM)、隨機存取記憶體(RAM)、快閃記憶體裝置、軟式磁碟及其他可移磁碟、磁性儲存媒體、光學儲存媒體(例如,光碟唯讀記憶體(CD ROMS)、數位多功能光碟(DVDs)等)、及其他等等。可將軟體程式碼/指令暫存於數位有形通訊鏈結中同時經由如此有形通訊鏈結實施電、光、聲、或其他形式的傳播信號,例如載波、紅外信號、數位信號等。Examples of tangible machine-
除了本文所述內容外,可對於本文所揭示之實施例及實施方式進行諸多修改而不脫離本文所述內容的範圍。因此,應將本文中實施例的說明內容解釋為僅係範例而不去限制本揭示內容的範圍。本發明的範圍應僅藉由參考以下申請專利範圍來衡量之。In addition to what is described herein, many modifications may be made to the embodiments and implementations disclosed herein without departing from the scope of what is described herein. Accordingly, the descriptions of the embodiments herein should be construed as examples only and not as limiting the scope of the present disclosure. The scope of the invention should be gauged only by reference to the following claims.
100,410:基板處理系統 101,200:排氣監測設備 102:周邊支撐架 103:排氣系統 104,120:收集器元件 104A:頂面 104B:底面 104C,104D:側壁面 105:處理工具 105A:處理腔室 105B:傳送腔室 105C:設備前端模組 105D:氣箱 106,106A,106B,106C,108, 108A,108B,108C,122,122A,124,124A:開口 107A,107B,107C,107D,107E,107F:排氣管線 109:排氣貯器 110A,110B,110C,110D,110E:感測器管 111:外部控制器 112:電路板 114,128:壓力感測器 114A:壓力感測器114的第一噴嘴 114B:壓力感測器114的第二噴嘴 116:環結構 D R,D 1,D 2,D T,D RO:直徑 T 1,T 2,T 3,T 4,T B:厚度 S 1,S 2,S 3,S DC:距離 X,Y,Z:方向 117:收集器元件104之部分 118A,118B:支撐柱 119:結構 125, 127: 排氣監測設備101之部分 126:傳輸器 128A:壓力感測器128的噴嘴 128B:壓力感測器128的第二噴嘴 130:支撐板 130A,130B:延伸 132:轉板 134:開口 136:開口 202:樹脂 300:管結構 302:圓柱管 302A:內側壁 304:安裝架 306:螺栓孔 307:開口 308:端 309:螺栓 320,330,350:設備 D I,D T:內徑 A T:截面積 A CE:面積 A SP:有效表面積 340:方法 341,342,343:操作 351:氣體 352:開口122A之一端 353:開口122A之相對端 354:開口106A之一端 355:開口106A之相對端 356,357:開口124A之端 360:方法 361,362,363,364,365:操作 400:在線氣體監測設備 402,402A,402B,402C,402D,402E,402F:阻尼器 404:轉子 406:葉片 408:氣體 θ:角度 500:控制器系統 501:輸入控制器 502:功率方塊 503:微控制器方塊 504:感測器方塊 505:輸出控制器 600:處理器系統 601:記憶體 602:處理器 603:機器可讀儲存媒體 604:通訊介面 605:網路匯流排 100, 410: Substrate processing system 101, 200: Exhaust monitoring equipment 102: Perimeter support frame 103: Exhaust system 104, 120: Collector element 104A: Top surface 104B: Bottom surface 104C, 104D: Side wall surface 105: Processing tool 105A: Processing chamber 105B: Transfer chamber 105C: Equipment front-end module 105D: Air box 106, 106A, 106B, 106C, 108, 108A, 108B, 108C, 122, 122A, 124, 124A: Opening 107A, 107B, 107C, 107D, 107E, 107F: Exhaust pipeline 109: Exhaust reservoir 110A, 110B, 110C, 110D, 110E: Sensor tube 111: External controller 112: Circuit board 114, 128: Pressure sensor 114A: The first nozzle of the pressure sensor 114 114B: Pressure sensor The second nozzle 116 of the detector 114: ring structure DR , D 1 , D 2 , D T , D RO : diameter T 1 , T 2 , T 3 , T 4 , T B : thickness S 1 , S 2 , S 3 , S DC : distance Nozzle 128B of device 128: second nozzle 130 of pressure sensor 128: support plate 130A, 130B: extension 132: rotating plate 134: opening 136: opening 202: resin 300: tube structure 302: cylindrical tube 302A: inner wall 304 : Mounting frame 306: Bolt hole 307: Opening 308: End 309: Bolt 320, 330, 350: Equipment D I , D T : Inner diameter A T : Cross-sectional area A CE : Area A SP : Effective surface area 340: Method 341, 342, 343: Operation 351: Gas 352: One end of opening 122A 353: The opposite end of opening 122A 354: One end of opening 106A 355: The opposite end of opening 106A 356, 357: The end of opening 124A 360: Method 361, 362, 363, 364, 365: Operation 400: Online gas monitoring equipment 402, 402A, 402B, 402C , 402D, 402E, 402F: Damper 404: Rotor 406: Blade 408: Gas θ: Angle 500: Controller system 501: Input controller 502: Power block 503: Microcontroller block 504: Sensor block 505: Output Controller 600: Processor system 601: Memory 602: Processor 603: Machine-readable storage medium 604: Communication interface 605: Network bus
在所附圖式中,藉由範例的方式而非藉由限制的方式來繪示本文所述的素材。為了繪示內容的簡化及清晰,圖式中繪示的元件並不一定按比例繪製。例如,為了清晰起見可能將某些元件的尺寸相對於其他元件放大之。同時,為了討論內容之清晰而可能以其簡化的「理想」形式與幾何形狀來表示諸多物理特徵,但仍應理解實際實施方式可能僅近似於所繪示的理想。例如,可繪製光滑表面及正方形交點而忽略由奈米加工技術形成之結構的有限粗糙度、圓角、及不完美的角度交點特徵。再者,於認為適當之處,在圖式當中乃重複參考標號以指示相應或相似的元件。In the accompanying drawings, the material described herein is illustrated by way of example and not by way of limitation. For the sake of simplicity and clarity, the elements depicted in the drawings are not necessarily drawn to scale. For example, the dimensions of some elements may be exaggerated relative to other elements for clarity. Also, while many physical features may be represented in simplified "ideal" forms and geometries for clarity of discussion, it is understood that actual implementations may only approximate the ideals depicted. For example, smooth surfaces and square intersections can be drawn while ignoring the finite roughness, rounded corners, and imperfect angular intersection characteristics of structures formed by nanofabrication techniques. Furthermore, where deemed appropriate, reference numbers are repeated in the drawings to indicate corresponding or similar elements.
依據本揭示內容的實施例,圖1A繪示基板處理系統的示意圖,其中複數排氣管線係與排氣或廠用真空系統耦接。FIG. 1A illustrates a schematic diagram of a substrate processing system in which a plurality of exhaust lines are coupled to an exhaust or factory vacuum system, according to an embodiment of the present disclosure.
依據本揭示內容的實施例,圖1B為設計以測量氣體性質之設備之等角視圖的繪圖。Figure IB is a drawing of an isometric view of a device designed to measure gas properties, in accordance with an embodiment of the present disclosure.
依據本揭示內容的實施例,圖1C為在圖1B之設備中所使用之支撐架之等角視圖的繪圖。Figure 1C is a drawing of an isometric view of a support frame used in the device of Figure IB, in accordance with an embodiment of the present disclosure.
依據本揭示內容的實施例,圖1D為圖1C中所繪示之支撐架的收集器元件之一部分的繪圖。FIG. 1D is a drawing of a portion of a collector element of the support frame illustrated in FIG. 1C , in accordance with an embodiment of the present disclosure.
依據本揭示內容的實施例,圖1E為圖1C中所繪示之支撐架的收集器元件之一部分的繪圖。FIG. 1E is a drawing of a portion of a collector element of the support frame illustrated in FIG. 1C , in accordance with an embodiment of the present disclosure.
依據本揭示內容的實施例,圖1F為圖1A之設備之一部分的放大等角視圖。FIG. 1F is an enlarged isometric view of a portion of the device of FIG. 1A , in accordance with an embodiment of the present disclosure.
依據本揭示內容的實施例,圖1G為圖1A之設備之一部分的放大等角視圖。Figure 1G is an enlarged isometric view of a portion of the device of Figure 1A, in accordance with an embodiment of the present disclosure.
依據本揭示內容的實施例,圖2A為圖1A之設備的繪圖,其繪示設備之電路板與支撐架之間的機械耦接。FIG. 2A is a drawing of the device of FIG. 1A illustrating the mechanical coupling between a circuit board and a support frame of the device, in accordance with an embodiment of the present disclosure.
依據本揭示內容的實施例,圖2B為圖2A之電路板的繪圖,其中電路板係包裹於保護外殼中。According to an embodiment of the present disclosure, FIG. 2B is a drawing of the circuit board of FIG. 2A , wherein the circuit board is wrapped in a protective casing.
依據本揭示內容的實施例,圖3A為管的繪圖。Figure 3A is a drawing of a tube in accordance with an embodiment of the present disclosure.
依據本揭示內容的實施例,圖3B為耦接在圖3A中所繪示之管內的圖1B之設備的繪圖。Figure 3B is a drawing of the device of Figure 1B coupled within the tube depicted in Figure 3A, in accordance with an embodiment of the present disclosure.
依據本揭示內容的實施例,圖3C為圖3B之結構的平面視圖。According to an embodiment of the present disclosure, FIG. 3C is a plan view of the structure of FIG. 3B.
依據本揭示內容的實施例,圖3D係繪示在圖3B之設備中測量氣體壓力之方法的流程圖。FIG. 3D is a flowchart illustrating a method of measuring gas pressure in the device of FIG. 3B , according to an embodiment of the present disclosure.
依據本揭示內容的實施例,圖3E係使用圖3B之設備之壓力測量的繪圖。Figure 3E is a plot of pressure measurements using the device of Figure 3B, in accordance with an embodiment of the present disclosure.
依據本揭示內容的實施例,圖3F係使用圖3B之設備之壓力測量的繪圖。Figure 3F is a plot of pressure measurements using the device of Figure 3B, in accordance with an embodiment of the present disclosure.
依據本揭示內容的實施例,圖3G係使用圖3B之設備之壓力測量的繪圖。Figure 3G is a plot of pressure measurements using the device of Figure 3B, in accordance with an embodiment of the present disclosure.
依據本揭示內容的實施例,圖3H係使用圖3B之設備之壓力測量的繪圖。Figure 3H is a plot of pressure measurements using the device of Figure 3B, in accordance with an embodiment of the present disclosure.
依據本揭示內容的實施例,圖3I係繪示在圖3B之設備中測量氣體壓力之方法的流程圖。According to an embodiment of the present disclosure, FIG. 3I is a flowchart illustrating a method of measuring gas pressure in the device of FIG. 3B.
依據本揭示內容的實施例,圖4A繪示圖3B之結構包括阻尼器的簡化示意圖。According to an embodiment of the present disclosure, FIG. 4A shows a simplified schematic diagram of the structure of FIG. 3B including a damper.
依據本揭示內容的實施例,圖4B繪示基板處理系統的示意圖,其中複數排氣管線中的每一排氣管線包括阻尼器。FIG. 4B illustrates a schematic diagram of a substrate processing system in which each exhaust line of a plurality of exhaust lines includes a damper, in accordance with an embodiment of the present disclosure.
依據本揭示內容的實施例,圖5繪示收集器系統的方塊圖。Figure 5 illustrates a block diagram of a collector system, in accordance with an embodiment of the present disclosure.
依據諸多實施例,圖6繪示具有機器可讀儲存媒體的處理器系統,機器可讀儲存媒體具有當執行時致使處理器測量及報告氣體性質的指令。In accordance with various embodiments, FIG. 6 illustrates a processor system having a machine-readable storage medium having instructions that, when executed, cause the processor to measure and report gas properties.
101:排氣監測設備 101: Exhaust monitoring equipment
102:周邊支撐架 102:Peripheral support frame
104,120:收集器元件 104,120: Collector element
106:開口 106:Open your mouth
108:開口 108:Open your mouth
110A,110B:感測器管 110A, 110B: Sensor tube
112:電路板 112:Circuit board
114:壓力感測器 114: Pressure sensor
125,127:排氣監測設備101之部分
125,127: Part of
126:傳輸器 126:Transmitter
130:支撐板 130:Support plate
Claims (28)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US202163270965P | 2021-10-22 | 2021-10-22 | |
US63/270,965 | 2021-10-22 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW202334625A true TW202334625A (en) | 2023-09-01 |
Family
ID=86059540
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW111135478A TW202334625A (en) | 2021-10-22 | 2022-09-20 | Exhaust monitoring apparatus and method for substrate processing systems |
Country Status (2)
Country | Link |
---|---|
TW (1) | TW202334625A (en) |
WO (1) | WO2023069210A1 (en) |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101098990B1 (en) * | 2009-12-08 | 2011-12-28 | (주)제이솔루션 | Exhaust pressure detector |
KR101617709B1 (en) * | 2014-12-10 | 2016-05-03 | 두산중공업 주식회사 | Fluid pressure measurement tube and pressure measurement module and equipment |
JP6727871B2 (en) * | 2016-03-18 | 2020-07-22 | 東京エレクトロン株式会社 | Exhaust system and substrate processing apparatus using the same |
CN106871977B (en) * | 2016-12-29 | 2019-05-24 | 滨海永达电子科技有限公司 | A kind of compound pressure flow sensor device |
JP6990121B2 (en) * | 2018-03-06 | 2022-01-12 | 株式会社Screenホールディングス | Board processing equipment |
-
2022
- 2022-09-16 WO PCT/US2022/043853 patent/WO2023069210A1/en unknown
- 2022-09-20 TW TW111135478A patent/TW202334625A/en unknown
Also Published As
Publication number | Publication date |
---|---|
WO2023069210A1 (en) | 2023-04-27 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN103348781B (en) | For the system and method that the air leakage in aeroseal district detects | |
EP2673598B1 (en) | Determining delay times for ultrasonic flow meters | |
US6928884B1 (en) | Method and apparatus for measurement of flow rate | |
RU2263882C2 (en) | Method and device for measuring pressure drop | |
Piotto et al. | Fabrication and characterization of a directional anemometer based on a single chip MEMS flow sensor | |
JP4320924B2 (en) | Particle measuring device and processing device | |
CN108758354B (en) | Heat supply pipeline leakage detection system and method based on infrasonic wave and reference point | |
KR20040002359A (en) | Method and apparatus for validating the accuracy of a flowmeter | |
BR112015011008B1 (en) | FLOWIMETER AND METHOD TO FIT AN OPENING METER | |
TW201346227A (en) | System for and method of monitoring flow through mass flow controllers in real time | |
US20220099697A1 (en) | Ultrasonic anemometers systems for sensing air flows in rooms and ducts | |
CN102749154A (en) | Method, device and energy meter for measuring temperature of fluid medium by ultrasonic wave | |
CN105181997A (en) | Non-contact ultrasonic flow velocity meter and non-contact flow velocity detection method | |
US20200400473A1 (en) | Fluid flow meter | |
TW202334625A (en) | Exhaust monitoring apparatus and method for substrate processing systems | |
JPH08502582A (en) | Thermal mass flow controller with orthogonal thermal mass flow sensor | |
CN213658642U (en) | Ultrasonic gas concentration measuring device | |
US6732596B2 (en) | Critical gas flow measurement apparatus and method | |
US7509880B2 (en) | Fluid flow meter body with high immunity to inlet/outlet flow disturbances | |
CN206292249U (en) | A kind of hot type wind speed sensing unit and sensor | |
EP3105550A1 (en) | Ultrasonic flow probe and method of monitoring fluid flow in a conduit | |
JP2809060B2 (en) | Fluid flow velocity measuring method, flow velocity measuring fin used therefor, flow measuring method in duct and apparatus therefor | |
US20030172746A1 (en) | Airflow Sensor | |
JP2001141534A (en) | Ultrasonic flowmeter, and flow measuring instrument provided with same | |
JP2003161651A (en) | Acoustic measuring device |