TW202334516A - Method of semiconductor processing - Google Patents

Abstract

Exemplary methods of semiconductor processing may include performing an electroplating operation on a semiconductor substrate in an electroplating bath within a vessel of an electroplating system. The methods may include removing the semiconductor substrate from the electroplating bath. The methods may include closing a valve associated with a first drain from the electroplating system. The methods may include increasing flow to a second drain from the electroplating system. The second drain may be associated with a drain channel from the vessel of the electroplating system.

Description

Surge flow to eliminate air bubbles in plating systems

This technology is related to several electroplating operations in semiconductor processing. In particular, the present technology relates to several systems and methods for performing bubble removal and elimination for electroplating systems.

Integrated circuits can be manufactured by a process that forms staggered, patterned layers of material on the surface of a substrate. After formation, etching, and other processing on the substrate, metal or other conductive materials are often deposited or formed to provide electrical connections between components. Because this metallization can be performed after many manufacturing operations, problems caused during metallization can result in expensive discarded substrates or wafers.

Electroplating is performed in a plating chamber where the device side of the wafer is in a liquid electrolyte bath and electrical contacts on the contact ring contact the conductive layer on the wafer surface. Electric current passes through the electrolyte and conductive layer. The metal ions in the electrolyte plate out onto the wafer, forming a metal layer on the wafer. Air or other bubbles along the surface of the plating bath fluid may impede plating at several locations where the bubbles interrupt fluid contact with the substrate surface. During the electroplating process, bubbles may form along the surface of the electroplating bath from any number of sources.

Therefore, there is currently a need for improved systems and methods that can be used to produce high quality devices and structures and protect both substrates and plating baths. This technology addresses these and other needs.

Example methods of semiconductor processing may include performing a plating operation on a semiconductor substrate in a plating bath in a vessel of an electroplating system. Such methods may include removing the semiconductor substrate from the electroplating bath. Such methods may include closing a valve associated with a first drain from the electroplating system. Such methods may include increasing flow to a second drain of the electroplating system. The second drain can be associated with a drain from the vessel of the electroplating system.

In some embodiments, the container may include a weir surrounding the container, and increasing flow to the second discharge channel may increase flow through the weir and into the discharge channel leading to the second discharge channel. The weir may define a plurality of notches extending from an upper surface of the weir. The container may include an upper cup defining a plurality of channels through an upper surface of the upper cup. One or more holes may couple each of the channels to a space in the container that is in fluid contact with a membrane. A cathode electrolyte can flow in the space. This space can contact a first surface of the membrane. Such methods may include flowing an anolyte into contact with a second surface of the membrane opposite the first surface of the membrane. The first discharge channel may be associated with one or more outlets from the space in the container. A central channel can be defined through the upper cup. The catholyte can flow into the container via the upper cup. When performing electroplating operations, catholyte flow can extend into each of these channels and flow through a weir surrounding the vessel. The electroplating system may include a return pump fluidly coupled to the second discharge channel. The electroplating system may include a liquid level sensor disposed in the discharge channel. The liquid level sensor can be communicatively coupled to the return pump. The return pump is operable to increase the flow rate from the second discharge channel in response to a signal from the level sensor, the signal instructing to increase a catholyte level in the discharge channel.

Some embodiments of the present technology may include several methods of semiconductor processing. Such methods may include performing an electroplating operation on a semiconductor substrate in a plating bath in a vessel of an electroplating system. Such methods may include removing the semiconductor substrate from the electroplating bath. Such methods may include diverting flow to a first drain from the electroplating system. Such methods may include increasing flow to a second drain from a plating system. The second drain can be associated with a drain from the vessel of the electroplating system. Increased flow to the second discharge channel may occur for a first period of time. Such methods may include reducing flow to a second drain from the electroplating system after the first period of time.

In some embodiments, when reducing flow to the second discharge passage after the first period of time, the methods may include increasing flow to the first discharge passage. The container may include a weir surrounding the container. Increasing flow to the second discharge channel increases flow over the weir into the discharge channel, which leads to the second discharge channel. The weir may define a plurality of notches extending from an upper surface of the weir. The container may include an upper cup defining a plurality of channels through an upper surface of the upper cup. One or more holes may couple each of the channels to a space in the container that is in fluid contact with a membrane. A central channel can be defined through the upper cup. The catholyte can flow into the container via the upper cup. When performing electroplating operations, catholyte flow may extend into each of these channels and flow across the weir. When increasing flow to the second discharge channel, a height of the catholyte in the discharge channel may be increased by less than or about 2 cm. The first period of time may be less than or approximately 30 seconds.

Some embodiments of the present technology may include several methods of semiconductor processing. Such methods may include performing an electroplating operation on a semiconductor substrate in a plating bath in a vessel of an electroplating system. The container may include a weir surrounding the container. Such methods may include removing the semiconductor substrate from the electroplating bath. Such methods may include providing a first flow through the electroplating system via a central channel through the vessel. Such methods may include providing a second flow through the electroplating system via a plurality of secondary channels through the vessel and radially outward from the central channel. The first flow and the second flow can flow to a drain channel from the vessel of the electroplating system. Flow to the discharge channel may flow through the weir into the discharge channel. The discharge channel may lead to a discharge channel. In some embodiments, the weir may define a plurality of notches extending from an upper surface of the weir. When increasing flow to the second discharge channel, a height of the cathode electrolyte in the discharge channel increases by less than or about 2 cm.

This technology offers several advantages over traditional technologies. For example, the present technology can reduce or limit bubbles along the meniscus of a plating bath during the plating process. In addition, the system can eliminate bubbles with minimal time loss between successive plating operations and also limits retrofit components or costs associated with improved elimination capabilities. These and other embodiments, along with many of their advantages and features, are described in greater detail in conjunction with the description below and the accompanying drawings. In order to have a better understanding of the above and other aspects of the present invention, examples are given below and are described in detail with reference to the accompanying drawings:

Several operations in semiconductor manufacturing and processing are performed to produce a large array of features on a substrate. As semiconductor layers are formed, vias, trenches, and other paths are created in the structure. These features can then be filled with conductive or metallic materials to provide layer-to-layer conductivity through the device.

Electroplating operations may be performed to provide conductive material in vias and other features on the substrate. Electroplating utilizes an electrolyte bath containing ions of conductive material to electrochemically deposit conductive material on a substrate and in features defined on the substrate. The substrate onto which metal is electroplated is operated as a cathode. Electrical contacts, such as rings or pins, allow electrical current to flow through the system. During electroplating, the substrate can be clamped to the head and immersed in the plating bath to form metallization. Metal ions can be deposited from the bath onto the substrate.

In plating systems utilizing inert anodes, an additional source of metal ions can be used to replenish the catholyte. Metal ions can pass through the membrane and be transferred from the anolyte solution to the catholyte. Both catholyte and anolyte can flow through opposite sides of the membrane. The membrane can be configured to allow the transfer of metal ions from the anode electrolyte to the catholyte and to limit the transfer of additives and other materials from the cathode electrolyte into the anolyte. The catholyte can then be circulated over the substrate surface during electroplating to allow metal ions to precipitate on the substrate and form conductive structures.

Air bubbles in the catholyte or plating bath may cause plating problems. When the substrate is immersed in the bath, bubbles trapped on the surface of the substrate may prevent the catholyte from contacting the surface at that location, which may impede plating at that location and may cause defects or device failure. Eliminating air bubbles from the meniscus of the bath surface can present a number of processing challenges. For example, when the substrate is removed from the bath, liquid falling back into the bath may cause bubbles to form on the surface. Similarly, subsequent flushing operations may cause droplets to fall to the bath surface and bubbles to form. Finally, if the air trapped in the catholyte is not removed in advance, bubbles may be generated during transportation. Although conventional techniques have tried to limit the formation of bubbles on the surface, bubbles continue to pose a challenge to electroplating operations.

This technology overcomes these problems by causing surging catholyte liquid through the plating chamber after the plating operation, which can help extract air bubbles from the surface of the liquid and transport them away from the plating vessel. As will be explained further below, elimination of bubbles from a plating bath according to some embodiments of the present technology can improve plating operations by limiting competing forces that can preserve bubbles in the container or neutralize competing forces, and limit the The time between plating operations. After describing an example system that may incorporate several embodiments of the present technology, the remainder of the disclosure will describe several aspects of the system and process of the present technology.

Figure 1 illustrates a schematic diagram of an electroplating system 20 in accordance with some embodiments of the present technology. The system may include one or more components as described below for processing substrates. It will be appreciated that electroplating system 20 is included as an example of an electroplating system that may benefit from one or more aspects of the present technology. This diagram can provide a general structure, as explained further below. As shown, the electroplating system 20 may include a head 30 positioned above the container assembly 50 . The container assembly 50 may be supported on the platform plate 24 and a relief plate. The pressure divider plate is attached to a bracket 38 or other structure. A single electroplating system 20 may be used as a stand-alone unit, or multiple electroplating systems 20 may be provided in an array, with workpieces or substrates loaded into and unloaded from the processor by one or more robots. The head 30 may be supported on the lifting/rotating unit 34. The lifting/rotating unit 34 is operable to raise or invert the head to load and unload workpieces into the head, and to lower the head 30 to engage with the container assembly 50 for processing.

Electrical control and power cables 40 connected to the lift/rotation unit 34 and internal head components may be routed from the plating system 20 to facility connections, or to connections in an automated system of multiple processors. A flush assembly 28 with a layered drain ring may be provided above the container assembly 50 . The discharge pipe 42 can connect the flushing assembly 28 to the facility discharge channel when in use. An optional lifter 36 may be provided below the container assembly 50 and may support the anode cup during anode replacement. Alternatively, lifter 36 may be used to support the anode cup over the remainder of container assembly 50 .

Turning to FIG. 2 , a cross-sectional view of a portion of an electroplating processing system according to some embodiments of the present technology is shown, and may illustrate further details of the electroplating system 20 described above. As shown, the vessel assembly 50 may include an anode cup 52, a lower membrane support 54, and an upper membrane support 56 secured together using fasteners, bolts, or any other mechanism of mechanical coupling. In the anode cup 52 , the first or inner anode 70 may be located near the bottom of the inner anolyte chamber, or near the bottom of the space formed between the inner anode and the backside of the inner membrane 85 . The second or outer anode 72 may be located near the bottom of the outer anode electrolyte chamber, or near the bottom of the space surrounding the inner anode electrolyte chamber, and the outer anode electrolyte chamber may also be formed behind the outer anode and inner membrane 85 between sides. For example, inner anode 70 may be a planar circular metal plate, and outer anode 72 may be a planar annular metal plate, and may include a platinum-coated titanium plate or any number of other materials in accordance with several embodiments of the present technology.

The inner and outer anode electrolyte chambers may be filled with copper pellets, or may be fluidly coupled to the facility cabinet, such as using, for example, pipes, pumps, valves, or other components. The facility cabinet may include copper pellets or some other material that may provide metal ions for electroplating operations in accordance with the present technology, and may be used to electroplat copper or any other metal or material used in semiconductor processing. As shown in Figure 2, inner anode 70 can be electrically coupled to a first electrical lead or connector 130, and outer anode 72 can be electrically coupled to a separate second electrical lead or connector 132. Unlike many traditional designs, in some embodiments of the present technology, the electroplating system can have a central anode, and only a single external anode, while still achieving improved performance due to other design features. Having only two anodes instead of three or more anode systems simplifies the design and control of the system and can also reduce the overall cost and complexity of the system. It will be appreciated that designs including three or more anodes may alternatively be used, for example where larger substrates are utilized.

Upper cup 76 may be contained within upper cup housing 58 or chamber body, or upper cup housing 58 or chamber body may surround upper cup 76 , and upper cup 76 may be a container in which substrates may be disposed to perform plating operations. a part of. Upper cup housing 58 may be attached and sealed to upper cup 76 . The upper cup 76 may have a curved upper surface 124 and a central hole or opening that may form a central or interior container 120 . The catholyte may flow in container 120 . The container 120 may be defined by a generally cylindrical space in the diffuser 74 opening into a bell-shaped or trumpet-shaped space defined by the curved upper surface 124 of the upper cup 76 . A set of concentric annular grooves may extend downwardly from the curved upper surface 124 of the upper cup 76 . An external catholyte chamber 78 or space as described further below may be formed in the bottom of upper cup 76 and may be connected to the ring via an array of tubes or other channels.

The diffuser 74 may be positioned in the central opening of the upper cup 76 and may be surrounded by a diffuser shroud 82 . The first or inner membrane 85 may be secured between the upper and lower membrane supports 54 and 56 and may separate the inner anolyte chamber from the container 120 . The inner membrane support 88 may be provided in the form of a radial spoke 114 located centrally on the upper membrane support 56 . The inner membrane support 88 may support the inner membrane 85 from above. This design allows the container 120 to remain substantially open, which preferably allows high currents to be delivered from the internal anode to the workpiece when electroplating onto a resistive film. The radial spokes may occupy or block less than about 5%, 10%, 15%, or 20% of the cross-sectional area of the container 120 . Similarly, a second or outer membrane 86 may be secured between the upper and lower membrane supports and separate the outer anolyte chamber and outer catholyte chamber 78. The outer membrane support 89 may be provided in the form of radial legs 105 or 116 on the upper membrane support 56 . The outer film support 89 can support the outer film from above.

The diffuser circumferential horizontal supply duct 84 may be formed in the outer cylindrical wall of the upper cup 76 by forming a gap between the outer wall of the upper cup 76 and the inner cylindrical wall of the upper cup housing 58 . ring or similar element for sealing. As shown in the figures, radial supply conduit 80 may extend radially inwardly from diffuser circumferential horizontal supply conduit 84 to annular shroud plenum 87 . The annular shield pressure regulating chamber 87 surrounds the upper end of the diffuser shield 82 . Radial supply conduits 80 may pass through the upper cup 76 between vertical tubes connecting an annular groove in the curved upper surface 124 of the upper cup 76 to the external catholyte chamber 78 . The electroplating system may include a current sampling component 200. The current sampling component 200 may include a sampling electrode and a containing electrolyte or sampling liquid (thiefolyte), which may help improve edge plating control and improve plating uniformity during operation.

During operation, anolyte may be provided into the internal anolyte chamber via a more central inlet through the bottom of the structure. Anolyte may be provided into the external anolyte chamber via a radially external inlet through the bottom of the structure. Anolyte can flow out of the inner anolyte chamber via circulation tank 162 , and anolyte can flow out of the outer anode electrolyte chamber via circulation tank 160 . Additionally, the catholyte may flow upward in container 120 and out radially outward. This flow can continue to overflow the weir 68. Weir 68 may extend around the vessel and may transport catholyte into drain channel 122 . The cathode electrolyte may flow out of the drain channel 122 to the return portion of the recirculation. The catholyte level indicator 140 may monitor the catholyte level in the drain channel 122 and/or the upper cup 76 . The catholyte level indicator 140 can be communicatively coupled to the return pump and can be ramped to a higher or lower speed as shown below to control the catholyte level. It will be understood that the terms anolyte and catholyte as used herein refer to the location of the electrolyte in the device and do not necessarily refer to any specific chemical composition of the electrolyte.

Figure 3 illustrates example operations of a method 300 of operating an electroplating system in accordance with some embodiments of the present technology. This method can be performed in several processing systems, including the electroplating system 20 described above, or any other electroplating system, and can include the elements, components, or subsystems described above. Method 300 may be performed to limit bubble formation along the surface or meniscus of the catholyte and may improve plating uniformity of the wafer. Method 300 may include a number of selection operations that may or may not be particularly relevant to some embodiments of the methods of the present technology. Method 300 may be described in connection with the system illustrated in Figure 4 . Figure 4 illustrates a cross-sectional view of a portion of an electroplating system 400 in accordance with some embodiments of the present technology. The electroplating system 400 may schematically illustrate some elements of the electroplating system 20 including the container assembly 50 described above, and some elements of the electroplating system 20 may be included to help illustrate the operations performed, and are not intended to limit the present technology. The diagram shown. It will be understood that electroplating system 400 may include any of the elements previously described, as well as any number of other elements commonly used in electroplating systems.

By way of example, and described in greater detail above, electroplating system 400 may include vessel 405 . Vessel 405 may contain a plating bath, such as a catholyte, and may be sized to accommodate substrates or wafers for plating. The container may be defined by one or more of the components described above, including, for example, an upper cup 410 and a weir 415 . The catholyte can flow upward through the central channel of the upper cup as shown, and can flow radially outward in the container. As mentioned above, the catholyte can flow in multiple directions within the container. Flow may flow through weir 415 into discharge channel 420 . A drain channel 420 is formed in the chamber housing and extends around the container outside, for example, upper cup 410 and weir 415 . Additionally, the catholyte may flow through a channel formed from the upper surface of the upper cup through the upper cup and through aperture 422 into space 425 . Holes 422 are formed from these channels through the bottom of the upper cup. Space 425 is defined below upper cup 410 . Space 425 may be located between the upper cup and membrane 430, wherein the space may be located on the first surface of membrane 430. As shown, the catholyte can flow through the channels and pores into this space and can sweep along membrane 430 to receive metal ions from the anolyte. Anolyte may flow through space 435 along the second surface of membrane 430. The second surface is, for example, a surface opposite the first surface and allows the anolyte to transport metal ions through the membrane to the catholyte.

The catholyte can exit the system at several locations. For example, looking at the space 425, one or more first exhaust channels 427 can be coupled to the space and serve as an outlet, and the cathode electrolyte can be recovered from the space. For example, any number of exhaust passages may provide flow from space 425 and may extend to valve 440 . Valve 440 may control flow from the first discharge channel and may provide catholyte to bath 445, or some recovery system. A recovery system is used to replenish and/or re-transmit via the upper cup into the central channel and into the container. Additionally, once the cathode electrolyte is received by the drain channel 420, the catholyte may flow through the second drain channel 450 and be pumped back to the cathode electrolyte bath 445, such as using a return pump 455. These flows can be controlled to a steady state position to form a meniscus 460 in the upper portion of the vessel and maintained by weir overflow. The substrate can then be transferred to a bath for electroplating.

As mentioned above, the catholyte can circulate in the lower space below the upper cup and be in ionic communication with the anode electrolyte. Circulation of the catholyte in this space can help limit crystallization in the anolyte. For example, in situations where the catholyte is not properly circulated to receive ions from the anolyte, the anolyte may become supersaturated in the vicinity of the membrane, which may result in the formation of crystals in the anolyte and may reduce the amount of crystals available for plating. ions on a circle or substrate. Therefore, the catholyte can flow at a rate to ensure proper transport of metal ions. However, this flow may exert forces on the flow over the weir, which may cause eddies or ripples to form in the meniscus, and may cause air to be trapped between the substrate and the cathode electrolyte, such that at these locations Plating is challenging. Additionally, this flow may result in trapped air bubbles along the surface of the meniscus, which may become trapped on the substrate again and limit plating at that location.

As mentioned above, when the substrate is removed from the plating bath after a plating operation, the catholyte or electrolyte bath fluid may fall back into the container, causing bubbles to form along the surface. These bubbles should flow with the cathode plating solution over the weir and be removed from the plating bath without being entrained in the system. However, as the catholyte flows through the upper cup, bubbles may become trapped in the vortex along the meniscus, and flow over the weir may fail to extract these bubbles from the system. This technology modulates the flow in the vessel to increase flow over the weir, which improves the removal of air bubbles from the system. Simply increasing the inlet flow rate may not be sufficient to resolve bubble entrapment caused by opposing flow through the upper cup. For example, if only a certain amount of inlet flow is increased, flow through the upper cup may also increase, which may increase forces along the meniscus and may exacerbate flow characteristics and bubble entrapment. Therefore, this technique modulates the flow through the upper cup and increases the flow over the weir, which can help to extract air bubbles from the surface and ensure a better meniscus for subsequent processing.

Method 300 may include several operations that facilitate removal of air bubbles from the plating bath and may be performed during or between wafer plating processes. For example, at selected operation 305, a plating operation may be performed on a semiconductor substrate submerged in a plating bath or catholyte. Once completed, the substrate may be removed or pumped from the electroplating bath at operation 310. This operation and the rinsing operations performed on the substrate may cause fluid droplets to fall back into the bath and may cause bubbles to form as described above. Method 300 may then adjust catholyte flow through the system to improve bubble removal before subsequent wafers are placed in a bath for electroplating.

Method 300 may include diverting flow through the first discharge passage at operation 315 . Diverting flow may be accomplished in any number of ways and in systems including valves. Each drain channel flows to a valve, such as valve 440 previously described. Flow from the first discharge passage may be reduced by at least partially closing the valve, and may in some embodiments include completely closing the valve. This stops any opposing flows in the container and allows all flow to flow over the weir, which reduces turbulence and allows all fluid to flow over the weir and into the discharge channel in a more laminar manner. Additionally, flow to the exhaust channel and the second exhaust channel may be increased at operation 320 as the inlet flow may be maintained or increased in some embodiments. In some embodiments, the inlet flow may not be increased, and the increased flow may simply come from the lack of additional exhaust paths. This controls the amount of liquid level rise in the discharge channel, which limits the time lost in returning to steady state operation.

For example, an increased second flow or flow over a weir may be performed for a first amount of time. After the first amount of time, the valve may return to a previous operating position or open and flow from the first discharge passage may be increased. This may cause the second flow to drop or decrease, such as at operation 325, as the system returns to a previous level. By controlling the amount of additional flow over the weir and ensuring that the amount of liquid allowed in the discharge channel is appropriately reduced, improved performance can be provided since the liquid level in the discharge channel can directly affect system operation. For example, when flow is allowed to increase over the weir to remove air bubbles, the liquid level in the discharge channel may rise from first liquid level 470a to second liquid level 470b. The first liquid level 470a and the second liquid level 470b may be relative situations and are only shown as examples and are not necessarily specific liquid levels. As the substrate is transferred into the bath, a large amount of catholyte fluid may be forced over the weir and into the drain channel. If the liquid level in the discharge channel is not allowed to decrease before transferring the subsequent wafer, splashing or overflowing onto the head or other system components may occur, which may cause damage to the equipment.

As mentioned above, the liquid level sensor 475 can be disposed in the discharge channel 420 and can monitor the liquid level. The sensor is communicatively coupled to the return pump 455 . The return pump 455 may ramp higher or lower in response to a signal received from the level sensor to increase or decrease flow from the drain channel. The signal is an instruction to increase or decrease the catholyte level in the discharge channel. However, simply overcoming the flow increase through a ramp pump may also be insufficient. For example, the pump may not be sized to overcome the change in liquid volume caused by the increased flow over the weir, which may cause the liquid level to rise. Additionally, at too high, the increased removal rate may cause the liquid level in the discharge channel to drop too low, potentially allowing air to become entrained in the system. Therefore, in some embodiments, the inlet transfer rate can be maintained during method 300, and a second period of time can occur before subsequent wafer transfers, and during the second period of time, the liquid level in the exhaust channel can be reduced to similar to The level of the previous first period. This ensures uniform processing conditions from wafer to wafer and still provides removal of air bubbles from the system.

The first period may begin at any point after the electroplating operation has been completed, and may begin as soon as the substrate is withdrawn from the container and electroplating bath. Once all flow or increased flow flows over the weir, the discharge channel may be flooded after sufficient time, and the first period may thus be limited to eliminate air bubbles and ensure that the discharge channel is not overfilled. To limit the chance of flooding of the discharge channel and limit production losses during performance of the method, the first period can be maintained at less than or about 60 seconds, and can be maintained at less than or about 55 seconds, less than or about 50 seconds seconds, less than or about 45 seconds, less than or about 40 seconds, less than or about 35 seconds, less than or about 30 seconds, less than or about 25 seconds, less than or about 20 seconds, Less than or about 15 seconds, less than or about 10 seconds, less than or about 5 seconds, or less.

The second period of time may be any of these described periods of time, and may be the same, greater, or less than the total amount of time of the first period of time. Therefore, the entire process of increasing flow over the weir to remove air bubbles and then returning the system to pretreatment conditions after flow to the first discharge channel has been fully restored can be less than or about 2 minutes, and can Less than or about 90 seconds, less than or about 60 seconds, less than or about 50 seconds, less than or about 40 seconds, less than or about 30 seconds, less than or about 20 seconds, less than Or about 10 seconds, or less. By controlling the timing and inlet flow of the method, and the pumping rate of the return pump, the liquid level in the discharge channel during the method may not rise greater than or about 5 cm, and may not rise greater than or about 4 cm, greater than or About 3 cm, greater than or about 2 cm, greater than or about 1 cm, greater than or about 9 mm, greater than or about 8 mm, greater than or about 7 mm, greater than or about 6 mm, greater than or about 5 mm, greater than or about 4 mm, greater than or about 3 mm, or less.

In some embodiments, one or more components may also assist in removing air bubbles from the system. Figure 5 illustrates a perspective view of a slotted weir 500 in accordance with some embodiments of the present technology. The weir 500 can be used to replace any of the aforementioned weirs, and includes, for example, the weir 68 and the weir 415 . The weir 500 may be castellated, and may have one or more grooves or notches 505 formed from the upper surface of the weir and extending at least partially through the outer edge of the weir. In some embodiments, this can improve liquid flow over the weir and can improve bubble removal. While weirs characterized by a uniform, planar outer profile may be used in several embodiments of the present technology, grooved weirs may limit dry spots and increase flow at the grooved locations. For example, on a planar weir, flow over the edge of the weir may be uneven, and flow at locations that do not cross the edge of the weir may accumulate bubbles. However, notches can reduce surface tension and increase surface flow at each notch location. This may further improve bubble removal by causing the flow rate to increase at the location of each notch, pulling flow over or through the weir. Therefore, in some embodiments, a slotted weir may be utilized to further improve the removal of air bubbles from the system.

Some embodiments of the present technology may further increase flow over the weir by countercurrent flowing through the upper cup, allowing both flows to pass over the weir. Figure 6 illustrates example operations of a method 600 of operating an electroplating system in accordance with some embodiments of the present technology. Method 600 may be executed in any of the aforementioned systems, and may include any of the operations described with respect to method 300. For example, method 600 optionally includes performing a plating operation 605 and removing the substrate from the plating bath and vessel at operation 610 . In some embodiments, method 600 may cause two flow paths to flow over the weir. For example, as previously described, at operation 615, the first flow may flow through the central channel of the upper cup and over the weir. Additionally, in some embodiments, a secondary pump 480 may be included in the system and may be used to cause a second flow at operation 620 to return catholyte via valve 440 and into first drain channel 427 . Flow can then be forced upward through holes and channels in the upper cup, such as along flow path 485, which can increase flow over the weir and can provide a uniform direction of flow through the chamber, which can improve flow from The system removes bubbles. Although illustrated as several operations, it will be understood that in some embodiments, flow may be performed during the electroplating operation, and a subsequent or second flow may be countercurrent after plating.

Compared with the aforementioned process, by countercurrent flowing through the first discharge channel, the flow through the membrane can be maintained during the bubble removal process, thereby ensuring that the ion transfer through the membrane is not affected by the process. The process can be performed for any length of time, such as any of the above-mentioned periods. By performing flow adjustments in accordance with several embodiments of the present technology, bubble removal can be improved compared to traditional systems and limit the impact on process throughput. Additionally, the present technology can be easily retrofitted into existing systems without requiring component replacement or system reconfiguration in some embodiments.

In the foregoing description, numerous details are set forth for purposes of explanation in order to understand various embodiments of the present technology. However, it will be apparent to one of ordinary skill in the art that certain embodiments may be practiced without some of the details or requiring additional details. For example, other substrates that may facilitate wetting techniques may be used with the present technology.

Having disclosed several embodiments, those of ordinary skill in the art will appreciate that various modifications, alternative constructions, and equivalents may be used without departing from the spirit of the embodiments. In addition, some known processes and components are not described to avoid unnecessarily obscuring the technology. Therefore, the above description should not be taken as limiting the scope of the present technology.

It will be understood that, unless the context clearly dictates otherwise, where a numerical range is provided, each intermediate value between the upper and lower limits of the range to the smallest fraction of the unit of the lower limit is also expressly disclosed. Any narrower range between any stated value or unstated intermediate value within a stated range, and any other stated or intermediate value within the range of such statement, is included. The upper and lower limits of these smaller ranges may independently be included or excluded in the range, and ranges that include either limit, neither limit, or both limits are also included in the smaller range. technology, but remains subject to any expressly excluded limitations in the stated scope. Where the stated range includes one or both limitations, ranges excluding either or both of those limitations are also included. Where multiple values are provided in a list, any range including or based on any such value is similarly specifically disclosed.

As used herein and in the appended claims, the singular forms "a", "an", and "the" include the plural form unless the content clearly dictates otherwise. Thus, for example, reference to "a material" includes a plurality of such materials, and reference to "the channel" includes one or more such materials known to one of ordinary skill in the art. Channels and their equivalents, etc.

Furthermore, when used in this specification and in the patent claims below, "comprise(s)", "comprising", "contain(s)", and "containing" The words "include(s)", and "including" are intended to mean the presence of stated features, integers, elements, or operations, but they do not exclude one or more other features, The presence or addition of an integer, component, operation, action, or group. In summary, although the present invention has been disclosed above through embodiments, they are not intended to limit the present invention. Those with ordinary knowledge in the technical field to which the present invention belongs can make various modifications and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention shall be determined by the appended patent application scope.

20,400:Electroplating system 24:Platform board 28: Flushing components 30:Head 34:Lifting/rotating unit 36: Lifter 38:Bracket 40: Electrical control and power cables 42: Discharge pipe 50:Container component 52:Anode cup 54:Lower membrane support 56: Upper film support 58: Upper cup shell 68,415,500:Weir Department 70: Internal anode 72:External anode 74:Diffuser 76,410: Upper cup 78:External cathode electrolyte chamber 80: Radial supply pipe 82: Diffuser guard 84: Diffuser circumferential horizontal supply pipe 85:Inner membrane 86:External membrane 87: Annular shield pressure regulating chamber 88: Internal membrane support 89:Exterior membrane support 105,116: Radial leg 114: Radial spokes 120,405: Container 122,420: Discharge channel 124: Curved upper surface 130: First electrical conductor or connector 132: Second electrical conductor or connector 140:Cathode electrolyte level indicator 160,162: Circulation tank 200:Current sampling component 300,600:Method 305~325,605~620: Operation 422:hole 425,435: space 427:First exhaust channel 430:Membrane 440: valve 445:bath 450: Second exhaust channel 455:Return pump 460:meniscus 470a: first liquid level 470b: Second liquid level 475:Liquid level sensor 480:Secondary pump 485:Flow path 505: Notch

A further understanding of the nature and advantages of the disclosed embodiments can be obtained by reference to the remainder of the specification and the drawings. Figure 1 illustrates a schematic diagram of an electroplating processing system according to some embodiments of the present technology. Figure 2 illustrates a cross-sectional view of a portion of an electroplating processing system in accordance with some embodiments of the present technology. Figure 3 illustrates an operational example of a method of operating an electroplating system in accordance with some embodiments of the present technology. Figure 4 illustrates a cross-sectional view of a portion of an electroplating processing system in accordance with some embodiments of the present technology. Figure 5 illustrates a perspective view of a slotted weir in accordance with some embodiments of the present technology. Figure 6 illustrates example operations of a method of operating an electroplating system in accordance with some embodiments of the present technology. Several figures are included for illustrative purposes. It will be understood that the drawings are for illustrative purposes and are not to be regarded as to scale unless specifically stated to be so. In addition, drawings are provided for illustrative purposes to aid understanding and may not include all aspects or information compared to actual representations, and may include exaggerated material for illustrative purposes. In the drawings, similar elements and/or features may have the same numerical reference signs. Furthermore, components of the same type may be distinguished by following the reference symbol with letters that distinguish similar components and/or features. If only a preceding numerical reference sign is used in the description, the description applies to any similar element and/or feature having the same preceding numerical reference sign, regardless of the suffix letter.

400:Electroplating system

415:Weir Department

410: Upper cup

405: Container

420: Discharge channel

422:hole

425,435: space

427:First exhaust channel

430:Membrane

440: valve

445:bath

450: Second exhaust channel

455:Return pump

460:meniscus

470a: first liquid level

470b: Second liquid level

475:Liquid level sensor

480:Secondary pump

485:Flow path

Claims (20)

A method of semiconductor processing, including: performing an electroplating operation on a semiconductor substrate in an electroplating bath in a vessel of an electroplating system; removing the semiconductor substrate from the electroplating bath; closing a valve associated with a first drain from the electroplating system; and Increase flow to a second drain from the electroplating system, wherein the second drain is associated with a drain from the vessel of the electroplating system. The method of semiconductor processing as claimed in claim 1, wherein the container includes a weir surrounding the container, and wherein the flow increased to the second discharge channel is increased flow through the weir into the discharge channel The discharge channel leads to the second discharge channel. The method of semiconductor processing as claimed in claim 2, wherein the weir defines a plurality of notches extending from an upper surface of the weir. The method of semiconductor processing as claimed in claim 1, wherein the container includes an upper cup defining a plurality of channels, the channels pass through an upper surface of the upper cup, and one or more holes are coupled to the channels. Each of them is in a space in the container, and the space is in fluid contact with a membrane. The method of semiconductor processing as claimed in claim 4, wherein a cathode electrolyte flows in the space, and wherein the space contacts a first surface of the film. The method of semiconductor processing as described in claim 5 further includes: An anolyte is flowed into contact with a second surface of the membrane opposite the first surface of the membrane. The method of semiconductor processing as claimed in claim 5, wherein the first discharge channel is associated with one or more outlets of the space in the container. The method of semiconductor processing as claimed in claim 5, wherein a central channel is defined through the upper cup, wherein the cathode electrolyte flows into the container through the upper cup, and wherein the cathode electrolyte flows when the electroplating operation is performed. is extended into each of the channels and flows through a weir surrounding the vessel. The method of semiconductor processing as claimed in claim 1, wherein the electroplating system further includes: a return pump fluidly coupled to the second discharge channel; and A liquid level sensor is disposed in the discharge channel, wherein the liquid level sensor is communicatively coupled to the return pump. The method of semiconductor processing as described in claim 9, wherein the return pump is operated to increase the flow rate from the second discharge channel in response to a signal from the liquid level sensor, the signal is instructing to increase the flow rate of the second discharge channel. A catholyte level in the discharge channel. A method of semiconductor processing, including: performing an electroplating operation on a semiconductor substrate in an electroplating bath in a vessel of an electroplating system; removing the semiconductor substrate from the electroplating bath; diverting flow to a first discharge channel from the electroplating system; Increased flow to a second drain from the electroplating system, wherein the second drain is associated with a drain from the vessel of the electroplating system, wherein increased flow to the second drain occurs a first period; and After the first period, flow to the second drain from the electroplating system is reduced. The method of semiconductor processing as described in claim 11 further includes: When the flow to the second discharge channel is reduced after the first period of time, the flow to the first discharge channel is increased. The method of semiconductor processing as claimed in claim 11, wherein the container includes a weir surrounding the container, and wherein the flow increased to the second discharge channel is increased flow through the weir into the discharge channel The discharge channel leads to the second discharge channel. The method of operating an electroplating system as claimed in claim 13, wherein the weir defines a plurality of notches extending from an upper surface of the weir. The method of operating an electroplating system as claimed in claim 13, wherein the container includes an upper cup defining a plurality of channels through an upper surface of the upper cup and one or more holes coupling the Each of the channels is in a space in the container that is in fluid contact with a membrane. The method of operating an electroplating system as claimed in claim 15, wherein a central channel is defined through the upper cup, wherein the cathode electrolyte flows into the container through the upper cup, and wherein when the electroplating operation is performed, the cathode Electrolyte flow extends into each of the channels and flows past the weir. The method of semiconductor processing as claimed in claim 11, wherein when increasing the flow to the second discharge channel, a height of the cathode electrolyte in the discharge channel increases by less than or approximately 2 cm. The method of semiconductor processing as claimed in claim 11, wherein the first period of time is less than or approximately 30 seconds. A method of semiconductor processing, including: performing an electroplating operation on a semiconductor substrate in an electroplating bath in a vessel of an electroplating system, wherein the vessel includes a weir surrounding the vessel; removing the semiconductor substrate from the electroplating bath; providing a first flow through the electroplating system via a central channel through the vessel; and A second flow is provided through the electroplating system via a plurality of secondary channels through the container and radially outward from the central channel, wherein the first flow and the second flow flow to and from the electroplating system. A discharge channel of the vessel of the system, and wherein the flow to the discharge channel flows through the weir into the discharge channel, the discharge channel leading to a discharge channel. The method of semiconductor processing as claimed in claim 19, wherein the weir defines a plurality of notches extending from an upper surface of the weir, and wherein when increasing flow to the second discharge channel, the cathode electrolyte A height increase in the discharge channel is less than or approximately 2 cm.