TW202331936A - Method for fabricating semiconductor device - Google Patents
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- TW202331936A TW202331936A TW111114237A TW111114237A TW202331936A TW 202331936 A TW202331936 A TW 202331936A TW 111114237 A TW111114237 A TW 111114237A TW 111114237 A TW111114237 A TW 111114237A TW 202331936 A TW202331936 A TW 202331936A
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- 238000000034 method Methods 0.000 title claims abstract description 96
- 239000004065 semiconductor Substances 0.000 title claims abstract description 57
- 230000006911 nucleation Effects 0.000 claims abstract description 124
- 238000010899 nucleation Methods 0.000 claims abstract description 124
- 239000010937 tungsten Substances 0.000 claims abstract description 81
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 81
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims abstract description 78
- 239000003638 chemical reducing agent Substances 0.000 claims abstract description 77
- 230000008569 process Effects 0.000 claims abstract description 70
- 230000004888 barrier function Effects 0.000 claims abstract description 68
- 239000002243 precursor Substances 0.000 claims abstract description 59
- 239000000758 substrate Substances 0.000 claims abstract description 46
- 238000002360 preparation method Methods 0.000 claims description 12
- NXHILIPIEUBEPD-UHFFFAOYSA-H tungsten hexafluoride Chemical compound F[W](F)(F)(F)(F)F NXHILIPIEUBEPD-UHFFFAOYSA-H 0.000 claims description 8
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 claims description 6
- 229910021342 tungsten silicide Inorganic materials 0.000 claims description 6
- FQNHWXHRAUXLFU-UHFFFAOYSA-N carbon monoxide;tungsten Chemical group [W].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-] FQNHWXHRAUXLFU-UHFFFAOYSA-N 0.000 claims description 5
- KPGXUAIFQMJJFB-UHFFFAOYSA-H tungsten hexachloride Chemical compound Cl[W](Cl)(Cl)(Cl)(Cl)Cl KPGXUAIFQMJJFB-UHFFFAOYSA-H 0.000 claims description 4
- 125000006850 spacer group Chemical group 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 351
- 229910052710 silicon Inorganic materials 0.000 description 36
- 239000010703 silicon Substances 0.000 description 36
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 35
- 238000004519 manufacturing process Methods 0.000 description 35
- UORVGPXVDQYIDP-UHFFFAOYSA-N borane Chemical compound B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 description 34
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 32
- 239000007789 gas Substances 0.000 description 27
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 24
- 239000000463 material Substances 0.000 description 19
- 229910052732 germanium Inorganic materials 0.000 description 18
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 18
- 238000012805 post-processing Methods 0.000 description 18
- 229910000085 borane Inorganic materials 0.000 description 17
- 229910052757 nitrogen Inorganic materials 0.000 description 16
- 239000001257 hydrogen Substances 0.000 description 15
- 229910052739 hydrogen Inorganic materials 0.000 description 15
- 238000002955 isolation Methods 0.000 description 15
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 14
- 229910000077 silane Inorganic materials 0.000 description 14
- 229910052786 argon Inorganic materials 0.000 description 12
- 239000012535 impurity Substances 0.000 description 11
- 239000000376 reactant Substances 0.000 description 11
- 238000000151 deposition Methods 0.000 description 10
- 239000012159 carrier gas Substances 0.000 description 9
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 8
- 150000002431 hydrogen Chemical class 0.000 description 8
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 239000000203 mixture Substances 0.000 description 7
- -1 tungsten nitride Chemical class 0.000 description 7
- 230000008021 deposition Effects 0.000 description 6
- 229910052734 helium Inorganic materials 0.000 description 6
- 239000001307 helium Substances 0.000 description 6
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 6
- 150000004767 nitrides Chemical class 0.000 description 6
- 238000000231 atomic layer deposition Methods 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 239000011261 inert gas Substances 0.000 description 5
- 238000010926 purge Methods 0.000 description 5
- 150000004756 silanes Chemical class 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 4
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 238000007664 blowing Methods 0.000 description 4
- 239000003085 diluting agent Substances 0.000 description 4
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- 229910052760 oxygen Inorganic materials 0.000 description 4
- 230000036961 partial effect Effects 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 230000002411 adverse Effects 0.000 description 3
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000002513 implantation Methods 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 229910052735 hafnium Inorganic materials 0.000 description 2
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000000977 initiatory effect Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910015844 BCl3 Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- HAQWSKVTPMWLCU-UHFFFAOYSA-J N(=O)[O-].[W+4].N(=O)[O-].N(=O)[O-].N(=O)[O-] Chemical compound N(=O)[O-].[W+4].N(=O)[O-].N(=O)[O-].N(=O)[O-] HAQWSKVTPMWLCU-UHFFFAOYSA-J 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- OQPDWFJSZHWILH-UHFFFAOYSA-N [Al].[Al].[Al].[Ti] Chemical compound [Al].[Al].[Al].[Ti] OQPDWFJSZHWILH-UHFFFAOYSA-N 0.000 description 1
- KCFIHQSTJSCCBR-UHFFFAOYSA-N [C].[Ge] Chemical compound [C].[Ge] KCFIHQSTJSCCBR-UHFFFAOYSA-N 0.000 description 1
- CEPICIBPGDWCRU-UHFFFAOYSA-N [Si].[Hf] Chemical compound [Si].[Hf] CEPICIBPGDWCRU-UHFFFAOYSA-N 0.000 description 1
- ILCYGSITMBHYNK-UHFFFAOYSA-N [Si]=O.[Hf] Chemical compound [Si]=O.[Hf] ILCYGSITMBHYNK-UHFFFAOYSA-N 0.000 description 1
- GMEFXBFKMIZRMO-UHFFFAOYSA-N aminogermanium Chemical compound [Ge]N GMEFXBFKMIZRMO-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 239000013590 bulk material Substances 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000000224 chemical solution deposition Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000012792 core layer Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000000313 electron-beam-induced deposition Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 229910000078 germane Inorganic materials 0.000 description 1
- IWTIUUVUEKAHRM-UHFFFAOYSA-N germanium tin Chemical compound [Ge].[Sn] IWTIUUVUEKAHRM-UHFFFAOYSA-N 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000007737 ion beam deposition Methods 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 239000002052 molecular layer Substances 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- KJXBRHIPHIVJCS-UHFFFAOYSA-N oxo(oxoalumanyloxy)lanthanum Chemical compound O=[Al]O[La]=O KJXBRHIPHIVJCS-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000002829 reductive effect Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical class [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- UVGLBOPDEUYYCS-UHFFFAOYSA-N silicon zirconium Chemical compound [Si].[Zr] UVGLBOPDEUYYCS-UHFFFAOYSA-N 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- YOUIDGQAIILFBW-UHFFFAOYSA-J tetrachlorotungsten Chemical compound Cl[W](Cl)(Cl)Cl YOUIDGQAIILFBW-UHFFFAOYSA-J 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910021324 titanium aluminide Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 description 1
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- Semiconductor Memories (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
Abstract
Description
本申請案主張美國第17/578,679及17/578,875號專利申請案之優先權(即最早優先權日為「2022年1月19日」),其內容以全文引用之方式併入本文中。This application claims priority to US Patent Application Nos. 17/578,679 and 17/578,875 (ie, the earliest priority date is "January 19, 2022"), the contents of which are incorporated herein by reference in their entirety.
本揭露關於一種半導體元件的製備方法,特別是關於一種包括後處理的半導體元件的製備方法。The present disclosure relates to a method for manufacturing a semiconductor element, in particular to a method for manufacturing a semiconductor element including post-processing.
半導體元件用於各種電子應用,如個人電腦、行動電話、數位相機和其他電子裝置。半導體元件的尺寸正在不斷縮小,以滿足日益增長的計算能力的需求。然而,在縮小尺寸的過程中出現各種問題,並且這種問題仍不斷增加。因此,在實現提高品質、產量、性能和可靠性以及降低複雜性方面仍然存在挑戰。Semiconductor components are used in various electronic applications such as personal computers, mobile phones, digital cameras and other electronic devices. Semiconductor components are shrinking in size to meet the demands of ever-increasing computing power. However, various problems arise during the downsizing, and such problems are still increasing. Therefore, challenges remain in achieving improvements in quality, yield, performance and reliability, and reducing complexity.
上文之「先前技術」說明僅係提供背景技術,並未承認上文之「先前技術」說明揭示本揭露之標的,不構成本揭露之先前技術,且上文之「先前技術」之任何說明均不應作為本案之任一部分。The above "prior art" description is only to provide background technology, and does not acknowledge that the above "prior art" description discloses the subject of this disclosure, and does not constitute the prior art of this disclosure, and any description of the above "prior art" shall not form part of this case.
本揭露的一個方面提供一種半導體元件的導電特徵的製備方法,包括:提供一基底;在該基底中形成一凹槽;共形地在該凹槽中形成一第一成核層;對該第一成核層執行一後處理;以及在該第一成核層上形成一第一塊狀層以填充該凹槽。該第一成核層和該第一塊狀層配置成該導電特徵。該第一成核層和該第一塊狀層包括鎢。該後處理包括一含硼烷還原劑。One aspect of the present disclosure provides a method for fabricating conductive features of a semiconductor device, comprising: providing a substrate; forming a groove in the substrate; conformally forming a first nucleation layer in the groove; performing a post-processing on a nucleation layer; and forming a first bulk layer on the first nucleation layer to fill the groove. The first nucleation layer and the first bulk layer configure the conductive feature. The first nucleation layer and the first bulk layer include tungsten. The post-treatment includes a borane-containing reducing agent.
本揭露的另一個方面提供一種半導體元件的製備方法,包括:提供一基底;在該基底中形成一字元線溝槽;共形地在該字元線溝槽中形成一第一絕緣層,並共形地在該第一絕緣層上形成一第一阻障層;共形地在該第一阻障層上形成一第一成核層;對該第一成核層執行一後處理,其中該後處理包括一含二硼烷還原劑。在該第一成核層上形成一第一塊狀層,其中該第一成核層和該第一塊狀層配置成一第一導電層;以及執行一平坦化製程,將該第一絕緣層、該第一阻障層和該第一導電層分別和相應地變成一字元線絕緣層、一字元線阻障層和一字元線導電層,其中該字元線絕緣層、該字元線阻障層和該字元線導電層配置成一字元線結構。該第一成核層和該第一塊狀層包括鎢。Another aspect of the present disclosure provides a method for manufacturing a semiconductor device, including: providing a substrate; forming a word line trench in the substrate; conformally forming a first insulating layer in the word line trench, and conformally forming a first barrier layer on the first insulating layer; conformally forming a first nucleation layer on the first barrier layer; performing a post-processing on the first nucleation layer, Wherein the post-treatment includes a diborane-containing reducing agent. forming a first bulk layer on the first nucleation layer, wherein the first nucleation layer and the first bulk layer are configured as a first conductive layer; and performing a planarization process to the first insulating layer , the first barrier layer and the first conductive layer respectively and correspondingly become a word line insulating layer, a word line barrier layer and a word line conductive layer, wherein the word line insulating layer, the word line The word line barrier layer and the word line conductive layer are configured into a word line structure. The first nucleation layer and the first bulk layer include tungsten.
本揭露的另一個方面提供一種半導體元件的製備方法,包括:提供一基底;在該基底中形成一字元線溝槽;共形地在該字元線溝槽中形成一第一絕緣層,並共形地在該第一絕緣層上形成一第一阻障層;共形地在該第一阻障層上形成一第一成核層;對該第一成核層執行一後處理,其中該後處理包括一含二硼烷還原劑和一含鎢前趨物;在該第一成核層上形成一第一塊狀層,其中該第一成核層和該第一塊狀層配置成一第一導電層;以及執行一平坦化製程,將該第一絕緣層、該第一阻障層和該第一導電層分別和相應地變成一字元線絕緣層、一字元線阻障層和一字元線導電層,其中該字元線絕緣層、該字元線阻障層和該字元線導電層配置成一字元線結構。該第一成核層和該第一塊狀層包括鎢。Another aspect of the present disclosure provides a method for manufacturing a semiconductor device, including: providing a substrate; forming a word line trench in the substrate; conformally forming a first insulating layer in the word line trench, and conformally forming a first barrier layer on the first insulating layer; conformally forming a first nucleation layer on the first barrier layer; performing a post-processing on the first nucleation layer, Wherein the post-treatment includes a diborane-containing reducing agent and a tungsten-containing precursor; a first bulk layer is formed on the first nucleation layer, wherein the first nucleation layer and the first bulk layer configured as a first conductive layer; and performing a planarization process, the first insulating layer, the first barrier layer and the first conductive layer respectively and correspondingly become a word line insulating layer, a word line resistance The barrier layer and a word line conductive layer, wherein the word line insulating layer, the word line barrier layer and the word line conductive layer are configured into a word line structure. The first nucleation layer and the first bulk layer include tungsten.
由於本揭露的半導體元件製備方法的設計,字元線導電層可以藉由對字元線導電層的成核部分採用後處理,使鎢具有更大的晶粒尺寸和更好的電阻率。此外,藉由使用由無定形矽化鎢形成的字元線間隔層,可以改善字元線導電層的電阻率,以避免字元線阻障層的不良柱狀晶粒結構效應。Due to the design of the manufacturing method of the disclosed semiconductor device, the word line conductive layer can make the tungsten have larger grain size and better resistivity by post-processing the nucleation part of the word line conductive layer. In addition, by using the wordline spacer layer formed of amorphous tungsten silicide, the resistivity of the wordline conductive layer can be improved to avoid the undesirable columnar grain structure effect of the wordline barrier layer.
上文已相當廣泛地概述本揭露之技術特徵及優點,俾使下文之本揭露詳細描述得以獲得較佳瞭解。構成本揭露之申請專利範圍標的之其它技術特徵及優點將描述於下文。本揭露所屬技術領域中具有通常知識者應瞭解,可相當容易地利用下文揭示之概念與特定實施例可作為修改或設計其它結構或製程而實現與本揭露相同之目的。本揭露所屬技術領域中具有通常知識者亦應瞭解,這類等效建構無法脫離後附之申請專利範圍所界定之本揭露的精神和範圍。The technical features and advantages of the present disclosure have been broadly summarized above, so that the following detailed description of the present disclosure can be better understood. Other technical features and advantages constituting the subject matter of the claims of the present disclosure will be described below. Those skilled in the art of the present disclosure should understand that the concepts and specific embodiments disclosed below can be easily used to modify or design other structures or processes to achieve the same purpose as the present disclosure. Those with ordinary knowledge in the technical field to which the disclosure belongs should also understand that such equivalent constructions cannot depart from the spirit and scope of the disclosure defined by the appended claims.
下面的揭露內容提供許多不同的實施例,或實例,用於實現所提供主題的不同特徵。為了簡化本揭露內容,下面描述元件和安排的具體例子。當然,這些只是例子,並不旨在具限制性。例如,在接下來的描述中,第一特徵在第二特徵上的形成可以包括第一和第二特徵直接接觸的實施例,也可以包括在第一和第二特徵之間形成附加特徵的實施例,這樣第一和第二特徵可以不直接接觸。此外,本揭露內容可能會在各實施例中重複參考數字和/或字母。這種重複是為了簡單明瞭,其本身並不決定所討論的各種實施例和/或配置之間的關係。The following disclosure provides many different embodiments, or examples, for implementing different features of the presented subject matter. To simplify the present disclosure, specific examples of components and arrangements are described below. Of course, these are examples only and are not intended to be limiting. For example, in the description that follows, the formation of a first feature on a second feature may include an embodiment where the first and second features are in direct contact, or may include an embodiment where an additional feature is formed between the first and second features For example, such that the first and second features may not be in direct contact. In addition, the present disclosure may repeat reference numerals and/or letters in various embodiments. This repetition is for clarity and does not in itself determine the relationship between the various embodiments and/or configurations discussed.
此外,空間相對用語,如"下"、"下面"、"下方"、"上"、"上方”等,為了便於描述,在此可用於描述一個元素或特徵與圖中所示的另一個(些)元素或特徵的關係。空間上的相對用語旨在包括元件在使用或操作中的不同方向,以及圖中描述的方向。該元件可以有其他方向(旋轉90度或其他方向),這裡使用的空間相對描述詞也同樣可以相應地解釋。In addition, spatially relative terms such as "below", "beneath", "below", "on", "above", etc., for convenience of description, may be used herein to describe the difference between one element or feature and another ( relationship between some) elements or features. Spatially relative terms are intended to encompass different orientations of elements in use or operation, as well as the orientation depicted in the figures. The element may be otherwise oriented (rotated 90 degrees or otherwise) and the spatially relative descriptors used herein interpreted accordingly.
除非上下文另有說明,本文在提到方向、佈局、位置、形狀、大小、數量或其他措施時,使用的用語如”相同"、"相等"、"平面"或"共面",不一定是指完全相同的方向、佈局、位置、形狀、大小、數量或其他措施,而是指在可能發生的、例如由於製造過程而發生的可接受的變化範圍內,包括幾乎相同的方向、佈局、位置、形狀、大小、數量或其他措施。用語"實質上"在這裡可以用來反映這一含義。例如,被描述為"實質上相同"、"實質上相等"或"實質上平面"的項目可以是完全相同、相等或平面的,也可以是相同、相等或平面的,在可接受的變化範圍內,例如由於製造過程而可能發生的變化。Unless the context dictates otherwise, terms such as "same", "equal", "planar" or "coplanar" are used herein when referring to orientation, layout, position, shape, size, quantity or other measures, not necessarily means exactly the same orientation, arrangement, position, shape, size, quantity or other measure, but means, within acceptable variations that may occur, for example, due to the manufacturing process, including nearly the same orientation, arrangement, position , shape, size, quantity or other measure. The term "substantially" may be used here to reflect this meaning. For example, items described as "substantially the same," "substantially equal," or "substantially flat" could be identical, equal, or flat, or the same, equal, or flat, within acceptable variations within, for example, variations that may occur due to the manufacturing process.
在本揭露內容中,半導體元件一般是指利用半導體特性而能發揮作用的元件,光電元件、發光顯示元件、半導體電路和電子元件都包括在半導體元件的範疇內。In this disclosure, a semiconductor element generally refers to an element that can function by utilizing semiconductor properties, and photoelectric elements, light-emitting display elements, semiconductor circuits, and electronic elements are all included in the category of semiconductor elements.
應該指出的是,在本揭露的描述中,上方(或之上)對應於方向Z的箭頭方向,下方(或之下)對應於方向Z的箭頭的相反方向。It should be noted that in the description of the present disclosure, upper (or above) corresponds to the direction of the arrow of direction Z, and lower (or below) corresponds to the opposite direction of the arrow of direction Z.
應該注意的是,用語"以形成"、"被形成"和"形成"可以是指並包括創建、構建、圖案化、植入或沉積元素、摻雜劑或材料的任何方法。形成方法的例子可包括但不限於原子層沉積、化學氣相沉積、物理氣相沉積、濺鍍、共濺鍍、旋塗、擴散、沉積、生長、植入、微影、乾蝕刻和濕蝕刻。It should be noted that the terms "to form", "formed" and "form" may refer to and include any method of creating, building, patterning, implanting or depositing elements, dopants or materials. Examples of formation methods may include, but are not limited to, atomic layer deposition, chemical vapor deposition, physical vapor deposition, sputtering, co-sputtering, spin coating, diffusion, deposition, growth, implantation, lithography, dry etching, and wet etching .
應該注意的是,在本揭露內容的描述中,這裡指出的功能或步驟可能以不同於圖中指出的順序發生。例如,連續顯示的兩個數位事實上可能實質上上是同時執行的,或者有時可能以相反的循序執行,這取決於所涉及的功能或步驟。It should be noted that, in the description of the present disclosure, the functions or steps noted herein may occur out of the order noted in the figures. For example, two figures shown in succession may in fact be executed substantially concurrently, or may sometimes be executed in the reverse order, depending upon the functions or steps involved.
圖1是流程圖,例示本揭露一個實施例之半導體元件1A的製備方法10。圖2是俯視示意圖,例示本揭露一個實施例之半導體元件1A的部分製備流程。圖3是橫截面示意圖,例示本揭露一個實施例之半導體元件1A沿圖2中A-A'線拍攝的部分製備流程。FIG. 1 is a flowchart illustrating a
參照圖1至圖3,在步驟S11,可以提供基底101,可以在基底101中形成隔離層103以定義主動區AA。Referring to FIGS. 1 to 3 , in step S11 , a
參照圖2和圖3,基底101可以包括一含矽材料。基底101的含矽材料的適用例示可以包括但不限於矽、矽鍺、碳摻雜矽鍺、碳化矽鍺、碳摻雜矽、碳化矽及其多層。儘管矽是晶圓製備中主要使用的半導體材料,但在一些實施例中,可以採用替代的半導體材料做為附加層,例如,但不限於鍺、砷化鎵、氮化鎵、矽鍺、碲化鎘、硒化鋅、鍺錫等。Referring to FIGS. 2 and 3 , the
可以執行一系列的沉積製程,以在基底101上沉積墊氧化物層(未示出)和墊氮化層(未示出)。可以執行微影製程,藉由在墊氮化物層上形成遮罩層(未示出)來定義隔離層103的位置。在微影製程之後,可以執行蝕刻製程,例如非等向性的乾蝕刻製程,以形成沿著墊氮化物層和墊氧化物層穿透並延伸到基底101的溝槽(未示出)。一種絕緣材料可以被沉積到溝槽中。隨後可以執行平坦化製程,如化學機械研磨,以去除多餘的填充材料,直到基底101的頂部表面曝露,因此形成隔離層103。隔離層103的頂面和基底101的頂面可以實質上共面。絕緣材料可以是,例如,氧化矽、氮化矽、氮氧化矽(silicon oxynitride)、氧氮化矽(silicon nitride oxide)或摻氟的矽酸鹽。A series of deposition processes may be performed to deposit a pad oxide layer (not shown) and a pad nitride layer (not shown) on the
應該指出的是,在本揭露的描述中,氮氧化矽是指含有矽、氮和氧的物質,其中氧的比例大於氮的比例。氧氮化矽是指含有矽、氧和氮的物質,其中氮的比例大於氧的比例。It should be noted that in the description of this disclosure, silicon oxynitride refers to a substance containing silicon, nitrogen and oxygen, wherein the ratio of oxygen is greater than that of nitrogen. Silicon oxynitride refers to a substance containing silicon, oxygen and nitrogen, wherein the proportion of nitrogen is greater than that of oxygen.
參照圖2和圖3,被隔離層103包圍的基底101的部分可稱為主動區AA。在一些實施例中,主動區AA可以在俯視視角下沿X方向延伸。在一些實施例中,主動區AA可以在俯視視角中沿Y方向延伸(未顯示)。在一些實施例中,活動區域AA可以沿著與X方向和Y方向各自傾斜的方向延伸(未顯示)。Referring to FIGS. 2 and 3 , the portion of the
應該注意的是,主動區AA可以包括基底101的一部分和基底101該部分之上的空間。將元件描述為配置在主動區AA上是指該元件配置在基底101該部分的頂面。將元件描述為配置在主動區AA中是指元件配置在基底101該部分中;但是,元件的頂面可以與基底101該部分的頂面齊平。將元件描述為配置在主動區AA之上是指該元件配置在基底101該部分的頂面之上。It should be noted that the active area AA may include a portion of the
圖4是俯視示意圖,例示本揭露一個實施例之半導體元件1A的部分製備流程。圖5至圖8是橫截面示意圖,例示本揭露一個實施例之半導體元件1A沿圖4中A-A'線拍攝的部分製備流程FIG. 4 is a schematic top view illustrating a part of the fabrication process of a
參照圖1、圖4和圖5,在步驟S13,可以在基底101中形成複數個字元線溝槽501。Referring to FIG. 1 , FIG. 4 and FIG. 5 , in step S13 , a plurality of
參照圖4和圖5,複數個字元線溝槽501可以在基底101和隔離層103中形成。複數個字元線溝槽501可以藉由使用在基底101和隔離層103上形成的遮罩圖案(為清晰起見未示出)做為蝕刻遮罩的蝕刻製程形成。在一些實施例中,複數個字元線溝槽501可以具有沿Y方向延伸並穿越主動區AA的線條形狀。例如,活動區域AA可以與兩個字元線溝槽501相交。活動區域AA可以被兩個字元線溝槽501分成三個部分。在一些實施例中,字元線溝槽501的長寬比可以是至少10:1、至少15:1、至少20:1、至少25:1或至少30:1。Referring to FIGS. 4 and 5 , a plurality of
參照圖1、圖6和圖7,在步驟S15,第一絕緣層310可以共形地形成在複數個字元線溝槽501中,並且第一阻障層320可以共形地形成在第一絕緣層310上。1, 6 and 7, in step S15, the first insulating
參照圖6,在一些實施例中,第一絕緣層310可以藉由熱氧化製程形成。例如,第一絕緣層310可以藉由氧化字元線溝槽501的表面而形成。在一些實施例中,第一絕緣層310可以藉由沉積製程形成,例如化學氣相沉積或原子層沉積。第一絕緣層310可以包括高K(介常數)材料、氧化物、氮化物、氮氧化物或其組合。在一些實施例中,在沉積一襯墊多晶矽層之後,第一絕緣層310可以藉由自由基氧化襯墊多晶矽層而形成。在一些實施例中,在形成襯墊氮化矽層之後,第一絕緣層310可以藉由自由基氧化襯墊氮化矽層而形成。Referring to FIG. 6 , in some embodiments, the first insulating
在一些實施例中,高K材料可以包括含鉿材料。該含鉿材料可以是,例如,氧化鉿、氧化矽鉿、氮氧化矽鉿,或其組合。在一些實施例中,高k材料可以是,例如,氧化鑭、氧化鑭鋁、氧化鋯、氧化鋯矽、氮氧化鋯矽、氧化鋁或其組合。其他高K材料可以選擇性地用於高K材料。In some embodiments, the high-K material may include a hafnium-containing material. The hafnium-containing material can be, for example, hafnium oxide, hafnium silicon oxide, hafnium silicon oxynitride, or combinations thereof. In some embodiments, the high-k material can be, for example, lanthanum oxide, lanthanum aluminum oxide, zirconium oxide, zirconium silicon oxide, zirconium silicon oxynitride, aluminum oxide, or combinations thereof. Other high-K materials can optionally be used for high-K materials.
參照圖7,第一阻障層320可以共形地形成在第一絕緣層310上和字元線溝槽501中。在一些實施例中,第一阻障層320可以藉由例如原子層沉積形成。第一阻障層320可以防止第一導電層330中的金屬離子(將在後面說明)擴散到基底101中,並可以改善第一絕緣層310和第一導電層330之間的黏合力。在一些實施例中,第一阻障層320可以由例如氮化鈦形成。第一阻障層320可以包括柱狀晶粒結構。Referring to FIG. 7 , the
圖9是圖表,例示本揭露一個實施例之還原劑脈衝和後處理的間隔時間。圖10是圖表,例示本揭露另一個實施例之還原劑脈衝和後處理的間隔時間。縱軸代表氣體流速,橫軸代表時間。圖11和圖12是橫截面示意圖,例示本揭露一個實施例之半導體元件1A沿圖4中A-A'線拍攝的部分製備流程。9 is a graph illustrating the interval between reductant pulses and post-treatment according to one embodiment of the present disclosure. FIG. 10 is a graph illustrating the interval between reductant pulses and post-treatment according to another embodiment of the present disclosure. The vertical axis represents gas flow rate, and the horizontal axis represents time. 11 and 12 are schematic cross-sectional views illustrating a part of the fabrication process of the
參照圖1和圖8至圖11,在步驟S17,可以共形地在第一阻障層320上形成第一成核層331,對第一成核層331執行後處理,並在第一成核層331上形成第一塊狀層333,其中第一成核層331和第一塊狀層333共同配置成第一導電層330。Referring to FIG. 1 and FIG. 8 to FIG. 11, in step S17, a
參照圖8,第一成核層331和第一塊狀層333可以包括鎢。鎢在動態隨機存取記憶體類型的積體電路元件的閘極和字元線及位元線中可能特別有用,因為它在隨後的高溫製程中具有熱穩定性,製程溫度可能達到900℃或以上。此外,鎢是一種高折射率的材料,具有良好的抗氧化性,而且電阻率也較低。Referring to FIG. 8 , the
在一些實施例中,第一成核層331可以是薄的共形層,用以促進隨後在其上形成塊狀材料(即第一塊狀層333)。與底層的第一阻障層320的共形可能是支撐高品質沉積的關鍵。在一些實施例中,第一成核層331可以藉由脈衝成核層方法形成。In some embodiments,
在脈衝成核層方法中,反應物(例如,還原劑或前趨物)的脈衝可以按順序注入並從反應腔室中吹驅(purge),通常藉由反應物之間吹驅氣體脈衝。第一個反應物可以被吸附在基底上(例如,第一阻障層320),可與下一個反應物進行反應。製程以循環方式重覆,直到達到所需厚度。應該注意的是,脈衝成核層方法通常可以藉由其較高的操作壓力範圍(大於1托)和較高的每個循環生長速度(大於每個循環1個單層膜的生長)來區別於原子層沉積。脈衝成核層方法期間的腔室壓力可以從約1托到約400托。In the pulsed nucleation layer approach, pulses of reactants (eg, reducing agents or precursors) can be sequentially injected and purged from the reaction chamber, typically by pulses of purge gas between the reactants. A first reactant can be adsorbed on the substrate (eg, first barrier layer 320 ) and can react with the next reactant. The process is repeated in a cyclic fashion until the desired thickness is achieved. It should be noted that the pulsed nucleation layer approach can generally be distinguished by its higher operating pressure range (greater than 1 Torr) and higher growth rate per cycle (greater than 1 monolayer growth per cycle) in atomic layer deposition. The chamber pressure during the pulsed nucleation layer process can be from about 1 Torr to about 400 Torr.
在一些實施例中,形成第一成核層331的反應物可以是,例如,含矽還原劑和含鎢前趨物。第一阻障層320最初可曝露於含矽的還原劑,然後曝露於含鎢的前趨物,以形成第一成核層331。對含矽還原劑和含鎢前趨物的曝露可定義為一個循環,並可重覆進行,直到達到第一成核層331的所需厚度。In some embodiments, the reactants for forming the
經發現矽烷和相關化合物能很好地吸附在金屬氮化物表面,如在一些積體電路應用中做為阻障層材料的氮化鈦和氮化鎢。任何合適的矽烷或矽烷衍生物都可做為含矽還原劑,包括矽烷的有機衍生物。一般認知,矽烷以自我限制的方式吸附在基底表面,在名義上形成矽烷物種的單層。因此,吸附物種的數量在很大程度上與矽烷的用量無關。Silanes and related compounds have been found to adsorb well to the surface of metal nitrides, such as titanium nitride and tungsten nitride, which are used as barrier layer materials in some integrated circuit applications. Any suitable silane or silane derivative can be used as the silicon-containing reducing agent, including organic derivatives of silane. It is generally recognized that silanes adsorb on substrate surfaces in a self-limiting manner, nominally forming a monolayer of silane species. Therefore, the amount of adsorbed species is largely independent of the amount of silane used.
在一些實施例中,曝露於含矽還原劑期間的基底溫度可在約200℃和約475℃之間、約300℃和約400℃之間、或約300℃。在一些實施例中,曝露於含矽還原劑期間的腔室壓力可在約1托和約350托之間,或固定在40托左右。曝露時間(或脈衝時間)可部分取決於劑量和腔室條件而變化。在一些實施例中,第一阻障層320被曝露,直到表面被至少一個飽和的矽烷物種充分而均勻地覆蓋。在一些實施例中,可以單獨提供含矽的還原劑。在一些實施例中,可將含矽還原劑與載氣,如氬氣或氬氫混合物一起提供。In some embodiments, the temperature of the substrate during exposure to the silicon-containing reducing agent can be between about 200°C and about 475°C, between about 300°C and about 400°C, or about 300°C. In some embodiments, the chamber pressure during exposure to the silicon-containing reducing agent may be between about 1 Torr and about 350 Torr, or fixed around 40 Torr. Exposure time (or pulse time) can vary depending in part on dose and chamber conditions. In some embodiments, the
在一些實施例中,一旦第一阻障層320被矽烷物種充分覆蓋,含矽還原劑的流動就可以停止。可以執行吹驅製程以清除第一阻障層320表面附近的殘留氣體反應物。吹驅製程可以用載氣執行,如氬氣、氫氣、氮氣或氦氣。In some embodiments, once the
在一些實施例中,含鎢前趨物可包括六氟化鎢、六氯化鎢或六羰基鎢。在一些實施例中,含鎢前趨物可以包括不含氟的有機金屬化合物,如MDNOW(甲基環戊二烯-二羰基亞硝醯鎢)和EDNOW(乙基環戊二烯-二羰基亞硝醯鎢)。在一些實施例中,含鎢前趨物可以在稀釋氣體中提供,伴隨著例如氬氣、氮氣、氫氣或其組合的氣體。In some embodiments, the tungsten-containing precursor may include tungsten hexafluoride, tungsten hexachloride, or tungsten hexacarbonyl. In some embodiments, tungsten-containing precursors may include fluorine-free organometallic compounds such as MDNOW (methylcyclopentadiene-dicarbonyl nitrosyl tungsten) and EDNOW (ethylcyclopentadiene-dicarbonyl tungsten) tungsten nitrite). In some embodiments, the tungsten-containing precursor may be provided in a diluent gas, along with a gas such as argon, nitrogen, hydrogen, or combinations thereof.
在一些實施例中,曝露於含鎢前趨物期間的基底溫度可在約200℃和約475℃之間、約300℃和約400℃之間、或約300℃。在一些實施例中,曝露於含鎢前趨物期間的腔室壓力可在約1托和約350托之間。含鎢前趨物的劑量和基底曝露時間(或脈衝時間)將根據許多因素而變化。通常,可以執行曝露直到吸附的矽烷物種藉由與含鎢前趨物的反應而被充分消耗,以產生第一成核層331。此後,含鎢前趨物的流動可以停止,用載氣如氬氣、氫氣、氮氣或氦氣執行吹驅製程。In some embodiments, the substrate temperature during exposure to the tungsten-containing precursor can be between about 200°C and about 475°C, between about 300°C and about 400°C, or about 300°C. In some embodiments, the chamber pressure during exposure to the tungsten-containing precursor may be between about 1 Torr and about 350 Torr. Dosage of tungsten-containing precursor and substrate exposure time (or pulse time) will vary according to many factors. Typically, exposure can be performed until the adsorbed silane species are sufficiently consumed by reaction with the tungsten-containing precursor to produce the
另外,在一些實施例中,形成第一成核層331的反應物可以是,例如,含硼烷還原劑和含鎢前趨物。第一阻障層320可以首先曝露於含硼烷還原劑,然後曝露於含鎢前趨物,以形成第一成核層331。對含硼烷還原劑和含鎢前趨物的曝露可定義為一個循環,並可重覆進行,直到達到第一成核層331的所需厚度。In addition, in some embodiments, the reactants for forming the
在一些實施例中,含硼烷還原劑可以是,例如,硼烷、二硼烷、三硼烷或含氫的鹵化硼(例如,BF3,BCl3)。含鎢前趨物可以是與上述含鎢前趨物相似的材料,其描述在此不再重覆。在一些實施例中,含硼烷還原劑可以在稀釋氣體中提供,伴隨氬氣、氮氣、氫氣、矽烷或其組合等氣體。例如,二硼烷可由一稀釋源提供(例如,5%的二硼烷和95%的氮氣)。在一些實施例中,曝露於含硼烷還原劑期間的基底溫度可在約200℃和約475℃之間、約300℃和約400℃之間、或約300℃。在一些實施例中,曝露於含硼烷還原劑期間的腔室壓力可在約1托和約350托之間。在一些實施例中,一旦含硼烷還原劑沉積到足夠的厚度,含硼烷還原劑的流動就可以停止。可以用載氣如氬氣、氫氣、氮氣或氦氣進行吹驅。In some embodiments, the borane-containing reducing agent can be, for example, borane, diborane, triborane, or a hydrogen-containing boron halide (eg, BF3, BCl3). The tungsten-containing precursor may be a material similar to the above-mentioned tungsten-containing precursor, and its description will not be repeated here. In some embodiments, the borane-containing reducing agent may be provided in a diluent gas, along with gases such as argon, nitrogen, hydrogen, silane, or combinations thereof. For example, diborane can be provided from a dilute source (eg, 5% diborane and 95% nitrogen). In some embodiments, the substrate temperature during exposure to the borane-containing reducing agent can be between about 200°C and about 475°C, between about 300°C and about 400°C, or about 300°C. In some embodiments, the chamber pressure during exposure to the borane-containing reducing agent can be between about 1 Torr and about 350 Torr. In some embodiments, the flow of the borane-containing reductant can be stopped once the borane-containing reductant is deposited to a sufficient thickness. Purging can be performed with a carrier gas such as argon, hydrogen, nitrogen or helium.
在接觸到含硼烷還原劑後,中間的半導體元件可以再接觸到含鎢的前驅體。該製程與曝露於含矽還原劑後曝露於含鎢前趨物的製程類似,在此不再重覆描述。After being exposed to the borane-containing reducing agent, the intermediate semiconductor element can then be exposed to the tungsten-containing precursor. The process is similar to the process of exposing to a tungsten-containing precursor after exposure to a silicon-containing reducing agent, and will not be described again here.
在一些實施例中,在形成第一成核層331之前,可利用接觸含硼烷還原劑和含鎢前趨物對第一阻障層320執行預處理。預處理可以包括二硼烷。In some embodiments, before forming the
在一些實施例中,例示性資料表明,基於二硼烷的第一成核層331可以在形成第一成核層331的初始階段產生具有更大晶粒尺寸的鎢。相反,基於矽烷的第一成核層331在形成第一成核層331的初始階段可能會產生晶粒尺寸較小的鎢。也就是說,沉積在基於矽烷的第一成核層331上的第一塊狀層333可能有較少或沒有缺陷,如縫隙和空隙。In some embodiments, exemplary data show that diborane-based
或者,第一成核層331可以依次曝露在含矽還原劑、含鎢前趨物、含硼烷還原劑和含鎢前趨物中形成。曝露的四個步驟可定義為一個循環。整個四步的循環可以重覆進行,以形成具有所需厚度的第一成核層331。在該製程的一個變化中,循環的前兩個步驟(依次曝露於含矽還原劑和含鎢前趨物)可以在與含硼烷還原劑接觸之前重覆一個或多個時間。在另一種變化中,循環的最後兩個步驟(依次曝露於含硼烷還原劑和含鎢前趨物)可以在前兩個步驟完成後重覆一次或多次。Alternatively, the
另外,在一些實施例中,形成第一成核層331的反應物可以是,例如,含鍺還原劑和含鎢前趨物。第一阻障層320可以首先曝露於含鍺還原劑,然後曝露於含鎢前趨物,以形成第一成核層331。在一些實施例中,含鍺還原劑可以是鍺,如Ge
nH
n+4、Ge
nH
n+6、Ge
nH
n+8和Ge
nH
m,其中n是1至10的整數,且n是與m不同的整數。也可以使用其他含鍺化合物,例如,烷基鍺、烷基鍺、氨基鍺、碳鍺和鹵代鍺。含鎢前趨物可以是與上述含鎢前趨物相似的材料,其描述在此不再重覆。
In addition, in some embodiments, the reactants for forming the
形成第一成核層331的例示性製程可以說明如下。An exemplary process for forming the
首先,圖7所示的中間半導體元件可以曝露在氫氣環境中的含鍺還原劑的脈衝下,以在第一阻障層320上形成鍺層。在一些實施例中,氫氣與含鍺還原劑的比例可以是約10:1、約50:1、約70:1、或約100:1。氫氣的存在可以減少每個循環沉積的厚度,以及減少沉積的第一塊狀層333的電阻率。First, the intermediate semiconductor device shown in FIG. 7 may be exposed to pulses of a germanium-containing reducing agent in a hydrogen atmosphere to form a germanium layer on the
在一些實施例中,可以使用一種或多種額外的還原劑的脈衝,如含硼或含矽的還原劑的脈衝。額外的還原劑可以按順序或與含鍺還原劑同時進行脈衝。在一些實施例中,脈衝之間的間隔時間停頓可在0.5秒和5秒之間。在一些實施例中,含鍺還原劑的脈衝可以是可選的,可以只使用含硼或含矽還原劑的脈衝。In some embodiments, pulses of one or more additional reducing agents, such as pulses of boron-containing or silicon-containing reducing agents, may be used. The additional reducing agent can be pulsed sequentially or simultaneously with the germanium-containing reducing agent. In some embodiments, the interval time pause between pulses may be between 0.5 seconds and 5 seconds. In some embodiments, the germanium-containing reductant pulses may be optional, and only boron- or silicon-containing reductant pulses may be used.
在一些實施例中,脈衝的持續時間(或脈衝時間)可在約0.25秒和約30秒之間、約0.25秒和約5秒之間、或約0.5秒和約3秒之間。該脈衝可足以使第一阻障層320的表面飽和或過飽和。在一些實施例中,可以使用載氣,如氬氣、氦氣或氮氣。在一些實施例中,可以執行可選的吹驅製程,以吹驅仍處於氣相中的、沒有吸附在第一阻障層320表面的過量的含鍺還原劑。吹驅製程可以藉由在固定壓力下流動一惰性氣體來進行,因此降低腔室的壓力,並在開始另一次氣體曝露之前對腔室重新加壓。In some embodiments, the duration of the pulse (or pulse time) may be between about 0.25 seconds and about 30 seconds, between about 0.25 seconds and about 5 seconds, or between about 0.5 seconds and about 3 seconds. The pulse may be sufficient to saturate or supersaturate the surface of the
接下來,中間的半導體元件可以曝露在含鎢前趨物的脈衝中。含鎢前趨物與沉積的鍺層反應,形成元素鎢。在一些實施例中,脈衝的持續時間(或脈衝時間)可在約0.25秒和約30秒之間、約0.25秒和約5秒之間、或約0.5秒和約3秒之間。該脈衝可足以與第一阻障層320表面上鍺吸附在該表面上的反應性位點發生反應。在一些實施例中,脈衝之間的間隔時間停頓可在約0.5秒約5秒之間。Next, the intermediate semiconductor element can be exposed to pulses of a tungsten-containing precursor. The tungsten-containing precursor reacts with the deposited germanium layer to form elemental tungsten. In some embodiments, the duration of the pulse (or pulse time) may be between about 0.25 seconds and about 30 seconds, between about 0.25 seconds and about 5 seconds, or between about 0.5 seconds and about 3 seconds. The pulse may be sufficient to react with reactive sites on the surface of the
在一些實施例中,可以使用載氣,如氬氣、氦氣或氮氣。在一些實施例中,對含鎢前趨物的曝露可以在氫氣環境中執行。在一些實施例中,可以執行一個可選的吹驅製程,以吹驅仍處於氣相中的、未與吸附在第一阻障層320表面的鍺反應的多餘的含鎢前趨物。吹驅製程可以藉由在固定壓力下流動一惰性氣體來進行,因此降低腔室的壓力,並在開始另一次氣體曝露之前重新加壓腔室。In some embodiments, a carrier gas such as argon, helium, or nitrogen may be used. In some embodiments, the exposure to the tungsten-containing precursor can be performed in a hydrogen environment. In some embodiments, an optional blow-off process may be performed to blow off excess tungsten-containing precursors that are still in the gas phase and have not reacted with the germanium adsorbed on the surface of the
最後,可以重覆曝露於含鍺還原劑和含鎢前趨物的脈衝,直到在第一阻障層320的表面沉積出所需厚度的第一成核層331。對含鍺還原劑和含鎢前趨物的脈衝的每次重覆曝露可稱為一個循環。Finally, the exposure to pulses of germanium-containing reducing agent and tungsten-containing precursor may be repeated until a desired thickness of
在一些實施例中,接觸含鍺還原劑和含鎢前趨物的脈衝的順序可以顛倒,如含鎢前趨物首先被脈衝。In some embodiments, the order of the pulses of contacting the germanium-containing reducing agent and the tungsten-containing precursor can be reversed, eg, the tungsten-containing precursor is pulsed first.
參照圖9,在一些實施例中,在形成第一成核層331之後,可以對第一成核層331執行後處理。在後處理期間,在第一成核層331上形成第一塊狀層333之前,第一成核層331可以接觸到一個或多個還原劑脈衝。曝露在還原劑脈衝下可以提高包括第一成核層331和第一塊狀層333的整體結構的電阻率。Referring to FIG. 9 , in some embodiments, after the
參照圖9,第一成核層331可以曝露在多個還原劑脈衝中,脈衝之間有間隔時間。在間隔時間內,沒有還原劑流向第一成核層331。在一些實施例中,還原劑可以是二硼烷,儘管可以使用其他還原劑。在一些實施例中,脈衝期間還原劑的流速在約100標準立方釐米/分鐘(sccm)和500 sccm之間。在一些實施例中,每個還原劑脈衝的脈衝時間(或脈衝持續時間)可在約0.5秒和約5秒之間,或約1秒和2秒之間。在一些實施例中,還原劑脈衝的數量可在2和8之間。在一些實施例中,後處理的製程壓力可在約2托和約100托之間,或約20托和約40托之間。Referring to FIG. 9, the
在一些實施例中,還原劑可以在稀釋氣體中提供,伴隨氬氣、氮氣、氫氣、矽烷或其組合等氣體。例如,二硼烷可以從一稀釋源中提供(例如,5%的二硼烷和95%的氮氣)。在一些實施例中,在還原劑脈衝和後處理的間隔時間內,惰性氣體/氫氣混合物可以連續流向第一成核層331。在一些實施例中,惰性氣體可以是氬氣。相反,在後處理的間隔時間內,除了連續流動的惰性氣體/氫氣混合物或其他背景氣體外,沒有其他氣體流向後處理,即在還原劑脈衝的間隔時間內沒有間隔的脈衝操作。In some embodiments, the reducing agent may be provided in a diluent gas, along with gases such as argon, nitrogen, hydrogen, silane, or combinations thereof. For example, diborane can be provided from a dilute source (eg, 5% diborane and 95% nitrogen). In some embodiments, the inert gas/hydrogen gas mixture may flow continuously to the
在一些實施例中,圖8所示的中間半導體元件可被預熱到約375℃和約415℃之間,或約395℃,以便在後處理之前穩定下來。在一些實施例中,後處理後的中間半導體元件可被加熱到約375℃和約415℃之間,或約395℃。曝露後處理前的預熱製程和後處理後的熱處理可增強薄膜的附著力,並改善薄層電阻的不均勻性百分比。In some embodiments, the intermediate semiconductor element shown in FIG. 8 may be preheated to between about 375°C and about 415°C, or about 395°C, to stabilize prior to post-processing. In some embodiments, the post-processed intermediate semiconductor element may be heated to between about 375°C and about 415°C, or about 395°C. Pre-heating process before post-exposure treatment and heat treatment after post-treatment can enhance the adhesion of the film and improve the percent non-uniformity of sheet resistance.
在一些實施例中,第一成核層331可在後處理後曝露於另外的含鎢前趨物,以在第一成核層331上沉積第一塊狀層333之前形成第一成核層331的另外一部分。可以使用任何合適的含鎢前趨物。例如,含鎢前趨物可包括六氟化鎢、六氯化鎢或六羰基鎢。含鎢前趨物可以在伴隨氬氣、氮氣、氫氣或其組合等氣體的稀釋氣體中提供。In some embodiments, the
參照圖10,另外,在一些實施例中,第一成核層331可以交替曝露在多個還原劑脈衝中,脈衝之間有間隔時間。在間隔時間內,沒有還原劑流向第一成核層331。在一些實施例中,還原劑如二硼烷和含鎢前趨物可以交替地流向(或引入)第一成核層331。Referring to FIG. 10 , in addition, in some embodiments, the
在一些實施例中,二硼烷的流速可在約100 sccm和約500 sccm之間,或約300 sccm。在一些實施例中,含鎢前趨物可以包括,例如,六氟化鎢、六氯化鎢或六羰基鎢。含鎢前趨物的流速可以在約100 sccm和約500 sccm之間,或者約100 sccm。在一些實施例中,脈衝時間(或脈衝持續時間)可在約0.5秒和5秒之間,或約1秒和2秒之間。在一些實施例中,每個脈衝之間的間隔時間可在約2秒和約5秒之間。在一些實施例中,脈衝的數量可以在2和8之間。在一些實施例中,腔室壓力可在約2托和約100托之間,或約20托和約40托之間。In some embodiments, the flow rate of diborane can be between about 100 seem and about 500 seem, or about 300 seem. In some embodiments, the tungsten-containing precursor can include, for example, tungsten hexafluoride, tungsten hexachloride, or tungsten hexacarbonyl. The flow rate of the tungsten-containing precursor may be between about 100 seem and about 500 seem, or about 100 seem. In some embodiments, the pulse time (or pulse duration) may be between about 0.5 seconds and 5 seconds, or between about 1 second and 2 seconds. In some embodiments, the interval between each pulse may be between about 2 seconds and about 5 seconds. In some embodiments, the number of pulses may be between 2 and 8. In some embodiments, the chamber pressure may be between about 2 Torr and about 100 Torr, or between about 20 Torr and about 40 Torr.
在一些實施例中,脈衝時間應足夠短,以確保沒有或實質上沒有鎢沉積。在一些實施例中,在後處理期間施加到第一成核層331的含鎢前趨物的量可以少於在形成第一成核層331期間施加到第一阻障層320的含鎢前趨物的量。在一些實施例中,在後處理期間施加到第一成核層331的含鎢前趨物的脈衝時間可以小於在形成第一成核層331期間施加到第一阻障層320的含鎢前趨物的脈衝時間。In some embodiments, the pulse time should be short enough to ensure no or substantially no tungsten deposition. In some embodiments, the amount of tungsten-containing precursor applied to
在特定實施例中,還原劑和含鎢前趨物的脈衝可以短至少於1秒。在一個例子中,二硼烷(B 2H 6)可被脈衝1秒,之後1秒的吹驅,接著1秒的六氟化鎢(WF 6)脈衝,然後2.5秒的吹驅。然後將這個循環重覆四次。 In certain embodiments, the pulses of reducing agent and tungsten-containing precursor can be as short as less than 1 second. In one example, diborane (B 2 H 6 ) may be pulsed for 1 second, followed by a 1 second purge, followed by a 1 second pulse of tungsten hexafluoride (WF 6 ) , followed by a 2.5 second purge. This cycle is then repeated four times.
不受特定理論的限制,相信在二硼烷脈衝之間引入六氟化鎢脈衝可能有助於從第一成核層331的表面清除未反應的二硼烷,否則它將促進微剝落的發生。Without being bound by a particular theory, it is believed that the introduction of tungsten hexafluoride pulses between diborane pulses may help to clear unreacted diborane from the surface of the
在一些實施例中,可執行後處理約10秒和約50秒之間,或約10秒和約30秒之間。較長的後處理時間(或持續時間)可能會誘發二硼烷的分解,這對沉積的第一塊狀層333的電阻率有不利影響。In some embodiments, post-processing may be performed for between about 10 seconds and about 50 seconds, or between about 10 seconds and about 30 seconds. A longer post-treatment time (or duration) may induce the decomposition of diborane, which adversely affects the resistivity of the deposited
參照圖11,第一塊狀層333可以形成在第一成核層331上,並完全填充字元線溝槽501。第一塊狀層333和第一成核層331共同配置成第一導電層330。第一塊狀層333可以藉由例如物理氣相沉積、原子層沉積、分子層沉積、化學氣相沉積、原位(in-situ)自由基輔助沉積、金屬有機化學氣相沉積、分子束磊晶、濺鍍、電鍍、蒸鍍、離子束沉積、電子束沉積、鐳射輔助沉積、化學溶液沉積,或其任何組合形成。Referring to FIG. 11 , a
例如,使用化學氣相沉積法沉積第一塊狀層333可包括將含鎢前趨物和共反應劑(例如還原劑)流向(或引入)包括第一成核層331的中間半導體元件。例示的製程壓力可在約10托和約500托之間。例示的基底溫度可在約250℃和約495℃之間。含鎢的前趨物可以是,例如,六氟化鎢,氯化鎢,或六羰基鎢。還原劑可以是,例如,氫氣、矽烷、二矽烷、肼、二硼烷或鍺烷。For example, depositing
在一些實施例中,第一塊狀層333的鎢的晶粒尺寸可以大於30奈米、大於50奈米、大於70奈米、大於80奈米、大於85奈米、或大於87奈米。在一些實施例中,第一塊狀層333可以包括α相鎢。In some embodiments, the tungsten grain size of the
藉由對第一成核層331採用後處理,沉積的第一導電層330可以具有更大的晶粒尺寸和更好的電阻率的鎢。By applying a post-treatment to the
應當指出,上述在字元線溝槽501中形成第一導電層330和對第一成核層331執行後處理的程序僅用於說明目的。要形成和處理的物件(例如,具有字元線溝槽501的基底101)不受限制。例如,待形成和處理的物件可以是一塊狀半導塊狀、一塊狀介電質層、一阻障層或一薄絕緣膜。待形成和處理的物件可以包括也可以不包括一凹槽。凹槽可以是指具有凹入輪廓的結構。凹入輪廓可以有一個狹窄的底部(也稱為封閉端或內部),朝向一個寬大的開口。凹槽可與溝、槽、開口、通孔或任何表示在要形成的物體中向內形成的空間的適用用語互換使用。第一導電層330更可經處理以形成例如閘電極、字元線、位元線、接觸點、金屬線、通孔或半導體元件中其他適用的導電元件。It should be noted that the above-mentioned procedures of forming the first
在一些實施例中,在形成第一導電層330之前,可以共形地在凹槽中形成一底層。該底層可以是一阻障層或一黏附層。底層的非限制性例示包括介電質層和導電層,例如,矽氧化物、矽氮化物、矽碳化物、金屬氧化物、金屬氮化物、金屬碳化物和金屬層。在一些實施例中,底層可以是氮化鈦、金屬鈦、氮化鎢、鋁化鈦、氧化鈦,或其組合。In some embodiments, prior to forming the first
圖13是俯視示意圖,例示本揭露一個實施例之半導體元件1A的部分製備流程。圖14是橫截面示意圖,例示本揭露的一個實施例之半導體元件1A沿圖13中A-A'線拍攝的部分製備流程。FIG. 13 is a schematic top view illustrating a part of the fabrication process of a
參照圖1和圖12至圖14,在步驟S19,可藉由對第一絕緣層310、第一阻障層320和第一導電層執行平坦化,在複數個字元線溝槽501中形成複數個字元線結構200。Referring to FIGS. 1 and 12 to 14, in step S19, a plurality of
參照圖12,可以執行平坦化製程,例如化學機械研磨,直到基底101的頂面和隔離層103的頂面曝露。在平坦化製程之後,第一絕緣層310可以在字元線溝槽501中變成字元線絕緣層210,第一阻障層320可以在字元線溝槽501中變成字元線隔離層220,第一導電層330可以在字元線溝槽501中變成字元線導電層230。每個字元線導電層230包括成核部分231和塊狀部分233。成核部分231來自於第一成核層331,而塊狀部分233則來自於第一塊狀層333。Referring to FIG. 12 , a planarization process, such as chemical mechanical polishing, may be performed until the top surface of the
為了簡明、清晰和方便描述,只描述一個字元線絕緣層210,一個字元線阻障層220和一個字元線導電層230。For brevity, clarity and convenience of description, only one word
參照圖13和圖14,可以執行蝕刻製程,例如非等向性的乾蝕刻製程,以凹陷字元線絕緣層210、字元線阻障層220和字元線導電層230。一種絕緣材料可以被填充到凹槽中。隨後,可以執行平坦化製程,例如化學機械研磨,直到基底101的頂面和隔離層103的頂面曝露,以去除多餘的材料,為後續製程步驟提供一個實質上平整的表面,並同時形成字元線封蓋層240。絕緣材料可以包括,例如,氧化矽、氮化矽、氮氧化矽或氧氮化矽。字元線絕緣層210、字元線阻障層220、字元線導電層230和字元線封蓋層240共同配置成字元線結構200。Referring to FIGS. 13 and 14 , an etching process, such as an anisotropic dry etching process, may be performed to recess the word
圖15是俯視示意圖,例示本揭露一個實施例之半導體元件1A的部分製備流程。圖16是橫截面示意圖,例示本揭露一個實施例之半導體元件沿圖15中的A-A'線拍攝的部分製備流程。FIG. 15 is a schematic top view illustrating a part of the fabrication process of a
參照圖1、圖15和圖16,在步驟S21,可以在主動區AA中形成複數個雜質區域105。1, 15 and 16, in step S21, a plurality of
參照圖15和圖16,可以使用字元線結構200做為遮罩來執行n型雜質植入製程,以形成主動區AA中的複數個雜質區105。n型雜質植入製程可以添加對本徵半導體貢獻自由電子的雜質。在含矽的基底中,n型摻雜物,即雜質的例子包括但不限於銻、砷或磷。在一些實施例中,複數個雜質區105的摻雜物濃度可以是約1E19原子/cm^3至約1E21/cm^3。複數個雜質區105可以分別和相應地在字元線結構200之間和字元線結構200與隔離層103之間形成。複數個雜質區105可以與位元線和電容電性耦合。Referring to FIGS. 15 and 16 , an n-type impurity implantation process may be performed using the
圖17至圖19是橫截面示意圖,例示本揭露另一個實施例之半導體元件1B的製備流程。17 to 19 are schematic cross-sectional views illustrating the fabrication process of a
在特定實施例中,第一阻障層320可以是具有柱狀晶粒結構的氮化鈦。氮化鈦的柱狀晶粒結構可能對形成第一導電層330期間的晶粒形成產生不利影響。一般來說,受氮化鈦柱狀晶粒結構影響的第一導電層330的鎢的晶粒尺寸可以小於30奈米。因此,受氮化鈦柱狀晶粒結構影響的第一導電層330的電阻率可能更差。In certain embodiments, the
參照圖17,可以用類似於圖2至圖7中說明的程序來製備一中間半導體元件。第二導電層350可以用脈衝成核層方法在第一阻障層320上形成。第二導電層350可以包括無定形的矽化鎢。第二導電層350的厚度T1可以大於約4.1奈米。在一些實施例中,第二導電層350的厚度T1可以大於約4.3奈米、大於約4.6奈米、或大於約5.2奈米。在一些實施例中,第二導電層350的厚度T1可以在約4.3奈米和約4.6奈米之間。Referring to FIG. 17, an intermediate semiconductor element can be prepared by a procedure similar to that illustrated in FIGS. 2 to 7. Referring to FIG. The second
參照圖17,在一些實施例中,第二導電層350可包括第二成核層351和第二塊狀層353。第二成核層351可以共形地形成在第一阻障層320上。隨後,第二塊狀層353可以共形地形成在第二成核層351上。Referring to FIG. 17 , in some embodiments, the second
在一些實施例中,第二成核層351和第二塊狀層353可以由矽化鎢形成。詳細地說,反應氣體(例如六氟化鎢)、惰性載氣(例如氬氣、氮氣和氦氣)以及所需的矽源氣體可在預混室中結合,然後流過包括第一阻障層320的中間半導體元件。矽源氣體最初可以是矽烷。該氣體混合物可用於形成第二成核層351。在形成第二成核層351之後,可以切換矽源氣體,並且可以使用二氯矽烷做為矽源氣體來沉積第二塊狀層353。矽源氣體的切換可以突然或逐漸執行。In some embodiments, the
在一些實施例中,惰性載體氣體的流速可以是矽源氣體(矽烷或二氯矽烷)流速的5至10倍。在一些實施例中,矽源氣體(矽烷或二氯矽烷)的流速又可以是反應物氣體流速的約50至100倍。在一些實施例中,矽烷的流速可以是每分鐘約400標準立方釐米(sccm)。反應氣體的流速可以是約4 sccm。惰性載氣的流速可以是約2800 sccm。In some embodiments, the flow rate of the inert carrier gas may be 5 to 10 times the flow rate of the silicon source gas (silane or dichlorosilane). In some embodiments, the flow rate of the silicon source gas (silane or dichlorosilane) may be about 50 to 100 times the flow rate of the reactant gas. In some embodiments, the flow rate of silane may be about 400 standard cubic centimeters per minute (seem). The flow rate of the reactant gas may be about 4 sccm. The flow rate of the inert carrier gas can be about 2800 sccm.
在一些實施例中,形成第二成核層351的製程溫度可低於500℃。在一些實施例中,形成第二成核層351的製程溫度可以是約450℃。在一些實施例中,形成第二成核層351的製程溫度可以是約400℃或低於400℃。在一些實施例中,形成第二成核層351的製程溫度可在約250℃和約400℃之間。在一些實施例中,第二塊狀層353可在與形成第二成核層351的製程溫度相同的溫度下形成。在一些實施例中,形成第二成核層351的製程持續時間可在約1秒和約25秒之間。在一些實施例中,形成第二成核層351的基底溫度可在約200℃和約500℃之間。In some embodiments, the process temperature for forming the
由於第二成核層351的存在,第二塊狀層353可以使用在沒有任何電漿增強技術幫助的製程來沉積。因此,形成第二導電層350的設備要求可能更容易,形成第二導電層350的成本可能更為降低。Due to the presence of the
參照圖18,第一成核層331可以共形地形成在第二塊狀層353上,而第一塊狀層333可以在第一成核層331上形成,其程序類似於圖8至圖11中說明的程序,其描述在此不再重覆。18, the
由於包括無定形矽化鎢的第二導電層350的存在,可以減少或避免源於氮化鈦柱狀晶粒結構的不利影響。因此,第一導電層330的電阻率可以得到改善。Due to the existence of the second
參照圖19,字元線封蓋層240可以用類似於圖13和圖14中說明的程序形成,其描述在此不再重覆。第二導電層350可以藉由平坦化製程在字元線溝槽501中變成字元線中間層250。每個字元線中間層250可以包括成核部分251和塊狀部分253。成核部分251可以從第二成核層351中產生。塊狀部分253可以來自第二塊狀層353。Referring to FIG. 19, the word
本揭露的一個方面提供一種半導體元件的導電特徵的製備方法,包括:提供一基底;在該基底中形成一凹槽;共形地在該凹槽中形成一第一成核層;對該第一成核層執行一後處理;以及在該第一成核層上形成一第一塊狀層以填充該凹槽。該第一成核層和該第一塊狀層配置成該導電特徵。該第一成核層和該第一塊狀層包括鎢。該後處理包括一含硼烷還原劑。One aspect of the present disclosure provides a method for fabricating conductive features of a semiconductor device, comprising: providing a substrate; forming a groove in the substrate; conformally forming a first nucleation layer in the groove; performing a post-processing on a nucleation layer; and forming a first bulk layer on the first nucleation layer to fill the groove. The first nucleation layer and the first bulk layer configure the conductive feature. The first nucleation layer and the first bulk layer include tungsten. The post-treatment includes a borane-containing reducing agent.
本揭露的另一個方面提供一種半導體元件的製備方法,包括:提供一基底;在該基底中形成一字元線溝槽;共形地在該字元線溝槽中形成一第一絕緣層,並共形地在該第一絕緣層上形成一第一阻障層;共形地在該第一阻障層上形成一第一成核層;對該第一成核層執行一後處理,其中該後處理包括一含二硼烷還原劑。在該第一成核層上形成一第一塊狀層,其中該第一成核層和該第一塊狀層配置成一第一導電層;以及執行一平坦化製程,將該第一絕緣層、該第一阻障層和該第一導電層分別和相應地變成一字元線絕緣層、一字元線阻障層和一字元線導電層,其中該字元線絕緣層、該字元線阻障層和該字元線導電層配置成一字元線結構。該第一成核層和該第一塊狀層包括鎢。Another aspect of the present disclosure provides a method for manufacturing a semiconductor device, including: providing a substrate; forming a word line trench in the substrate; conformally forming a first insulating layer in the word line trench, and conformally forming a first barrier layer on the first insulating layer; conformally forming a first nucleation layer on the first barrier layer; performing a post-processing on the first nucleation layer, Wherein the post-treatment includes a diborane-containing reducing agent. forming a first bulk layer on the first nucleation layer, wherein the first nucleation layer and the first bulk layer are configured as a first conductive layer; and performing a planarization process to the first insulating layer , the first barrier layer and the first conductive layer respectively and correspondingly become a word line insulating layer, a word line barrier layer and a word line conductive layer, wherein the word line insulating layer, the word line The word line barrier layer and the word line conductive layer are configured into a word line structure. The first nucleation layer and the first bulk layer include tungsten.
本揭露的另一個方面提供一種半導體元件的製備方法,包括:提供一基底;在該基底中形成一字元線溝槽;共形地在該字元線溝槽中形成一第一絕緣層,並共形地在該第一絕緣層上形成一第一阻障層;共形地在該第一阻障層上形成一第一成核層;對該第一成核層執行一後處理,其中該後處理包括一含二硼烷還原劑和一含鎢前趨物;在該第一成核層上形成一第一塊狀層,其中該第一成核層和該第一塊狀層配置成一第一導電層;以及執行一平坦化製程,將該第一絕緣層、該第一阻障層和該第一導電層分別和相應地變成一字元線絕緣層、一字元線阻障層和一字元線導電層,其中該字元線絕緣層、該字元線阻障層和該字元線導電層配置成一字元線結構。該第一成核層和該第一塊狀層包括鎢。Another aspect of the present disclosure provides a method for manufacturing a semiconductor device, including: providing a substrate; forming a word line trench in the substrate; conformally forming a first insulating layer in the word line trench, and conformally forming a first barrier layer on the first insulating layer; conformally forming a first nucleation layer on the first barrier layer; performing a post-processing on the first nucleation layer, Wherein the post-treatment includes a diborane-containing reducing agent and a tungsten-containing precursor; a first bulk layer is formed on the first nucleation layer, wherein the first nucleation layer and the first bulk layer configured as a first conductive layer; and performing a planarization process, the first insulating layer, the first barrier layer and the first conductive layer respectively and correspondingly become a word line insulating layer, a word line resistance The barrier layer and a word line conductive layer, wherein the word line insulating layer, the word line barrier layer and the word line conductive layer are configured into a word line structure. The first nucleation layer and the first bulk layer include tungsten.
由於本揭露的半導體元件製備方法的設計,字元線導電層可以藉由對字元線導電層的成核部分採用後處理,使鎢具有更大的晶粒尺寸和更好的電阻率。此外,藉由使用由無定形矽化鎢形成的字元線間隔層,可以改善字元線導電層的電阻率,以避免字元線阻障層的不良柱狀晶粒結構效應。。Due to the design of the manufacturing method of the disclosed semiconductor device, the word line conductive layer can make the tungsten have larger grain size and better resistivity by post-processing the nucleation part of the word line conductive layer. In addition, by using the wordline spacer layer formed of amorphous tungsten silicide, the resistivity of the wordline conductive layer can be improved to avoid the undesirable columnar grain structure effect of the wordline barrier layer. .
雖然已詳述本揭露及其優點,然而應理解可以進行其他變化、取代與替代而不脫離揭露專利範圍所界定之本揭露的精神與範圍。例如,可用不同的方法實施上述的許多製程,並且以其他製程或其組合替代上述的許多製程。Although the present disclosure and its advantages have been described in detail, it should be understood that other changes, substitutions and substitutions can be made hereto without departing from the spirit and scope of the present disclosure as defined by the disclosed claims. For example, many of the processes described above can be performed in different ways and replaced by other processes or combinations thereof.
再者,本揭露案的範圍並不受限於說明書中所述之製程、機械、製造、物質組成物、手段、方法與步驟之特定實施例。該技藝之技術人士可自本揭露的揭示內容理解以根據本揭露而使用與本文所述之對應實施例具有相同功能或是達到實質上相同結果之現存或是未來發展之製程、機械、製造、物質組成物、手段、方法、或步驟。據此,此等製程、機械、製造、物質組成物、手段、方法、或步驟係包括於本揭露案之揭露專利範圍內。Furthermore, the scope of the disclosure is not limited to the particular embodiments of the process, machine, manufacture, composition of matter, means, methods and steps described in the specification. Those skilled in the art can understand from the disclosure content of this disclosure that they can use existing or future developed processes, machinery, manufacturing, A composition of matter, means, method, or step. Accordingly, such processes, machinery, manufacture, material composition, means, methods, or steps are included in the scope of the patent disclosure of this disclosure.
1A:半導體元件
1B:半導體元件
10:製備方法
101:基底
103:隔離層
105:雜質區域
200:字元線結構
210:字元線絕緣層
220:字元線隔離層
230:字元線導電層
231:成核部分
233:塊狀部分
240:字元線封蓋層
250:字元線間隔層
251:成核部分
253:塊狀部分
310:第一絕緣層
320:第一阻障層
330:第一導電層
331:第一成核層
333:第一塊狀層
350:第二導電層
351:第二成核層
353:第二塊狀層
501:字元線溝槽
AA:主動區
A-A':線
S11:步驟
S13:步驟
S15:步驟
S17:步驟
S19:步驟
S21:步驟
T1:厚度
X:方向
Y:方向
Z:方向
1A:
參閱實施方式與申請專利範圍合併考量圖式時,可得以更全面了解本申請案之揭示內容,圖式中相同的元件符號係指相同的元件。
圖1是流程圖,例示本揭露一個實施例之半導體元件的製備方法。
圖2是俯視示意圖,例示本揭露一個實施例之半導體元件的部分製備流程。
圖3是橫截面示意圖,例示本揭露一個實施例之半導體元件1A沿圖2中A-A'線拍攝的部分製備流程。
圖4是俯視示意圖,例示本揭露一個實施例之半導體元件的部分製備流程
圖5至圖8是橫截面示意圖,例示本揭露一個實施例之半導體元件沿圖4中A-A'線拍攝的部分製備流程。
圖9是圖表,例示本揭露一個實施例之還原劑脈衝和後處理的間隔時間。
圖10是圖表,例示本揭露另一個實施例之還原劑脈衝和後處理的間隔時間。
圖11和圖12是橫截面示意圖,例示本揭露一個實施例之半導體元件沿圖4中A-A'線拍攝的部分製備流程。
圖13是俯視示意圖,例示本揭露一個實施例之半導體元件的部分製備流程
圖14是橫截面示意圖,例示本揭露一個實施例之半導體元件沿圖13中A-A'線拍攝的部分製備流程。
圖15是俯視示意圖,例示本揭露一個實施例之半導體元件的部分製備流程
圖16是橫截面示意圖,例示本揭露一個實施例之半導體元件沿圖15中A-A'線拍攝的部分製備流程。
圖17至圖19是橫截面示意圖,例示本揭露另一個實施例之半導體元件的製備流程。
The disclosure content of the present application can be understood more comprehensively when referring to the embodiments and the patent scope of the application for combined consideration of the drawings, and the same reference numerals in the drawings refer to the same components.
FIG. 1 is a flowchart illustrating a method for fabricating a semiconductor device according to an embodiment of the present disclosure.
FIG. 2 is a schematic top view illustrating a partial fabrication process of a semiconductor device according to an embodiment of the present disclosure.
FIG. 3 is a schematic cross-sectional view illustrating a part of the fabrication process of the
1A:半導體元件 1A: Semiconductor components
101:基底 101: Base
103:隔離層 103: isolation layer
105:雜質區域 105: impurity area
200:字元線結構 200: character line structure
210:字元線絕緣層 210: word line insulation layer
220:字元線隔離層 220: word line isolation layer
230:字元線導電層 230: word line conductive layer
231:成核部分 231: Nucleation part
233:塊狀部分 233: Blocky part
240:字元線封蓋層 240: character line capping layer
501:字元線溝槽 501: word line groove
AA:主動區 AA: active area
A-A':線 A-A': line
Z:方向 Z: Direction
Claims (12)
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US17/578,875 US11676861B1 (en) | 2022-01-19 | 2022-01-19 | Method for fabricating semiconductor device |
US17/578,679 | 2022-01-19 | ||
US17/578,875 | 2022-01-19 |
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