TW202331426A - Cleaning tool and method for cleaning a portion of a lithography apparatus - Google Patents

Abstract

The described system comprises a cleaning tool. The cleaning tool is configured to be inserted into a lithography apparatus. The cleaning tool includes a body configured to be inserted into the lithography apparatus; a cleaner material configured to clean a portion of the lithography apparatus upon contact therewith; and a film carrying the cleaner material, the film configured to attached to the body and prevent the cleaner material from contacting a surface of the body. The includes, for example, a first layer at least partially covered with the cleaner material, and a second layer configured to attach to the surface of the body and prevent the cleaner material from contacting the surface of the cleaning tool, the second layer being disposed between the first layer and the surface of the body.

Description

Cleaning tool and method for cleaning a part of lithography equipment

This specification generally relates to a cleaning tool and method for cleaning a portion of a lithography apparatus.

Lithography (eg, projection) equipment can be used, for example, in the manufacture of integrated circuits (ICs). In this case, a patterning device (such as a mask) may contain or provide a pattern ("design layout") corresponding to the individual layers of the IC, and this pattern may be irradiated to the target by, for example, passing through the pattern on the patterning device. A part of the method is transferred onto a target portion (eg, comprising one or more die) on a substrate (eg, a silicon wafer) that has been coated with a radiation-sensitive material ("photoresist"). Generally, a single substrate contains a plurality of adjacent target portions, and the pattern is sequentially transferred to the plurality of adjacent target portions by the lithographic projection apparatus, one target portion at a time. In one type of lithographic projection apparatus, the pattern on the entire patterning device is transferred to one target portion in one operation. This device is often called a stepper. In an alternative apparatus, often referred to as a step-and-scan apparatus, the projected beam is scanned across the patterning device in a given reference direction (the "scan" direction), while parallel or antiparallel to it. The substrate is moved synchronously with reference to the direction. Progressively transfer different parts of the pattern on the patterning device to a target part. Since, in general, a lithographic projection apparatus will have a reduction ratio M (eg, 4), the moving speed F of the substrate will be 1/M time while the projection beam scans the patterning device. Further information on lithographic devices as described herein can be gleaned from, for example, US 6,046,792, which is incorporated herein by reference.

Before transferring the pattern from the patterning device to the substrate, the substrate may undergo various processes such as priming, resist coating, and soft baking. After exposure, the substrate may be subjected to other processes ("post-exposure processes"), such as post-exposure bake (PEB), development, hard-baking, and metrology/inspection of the transferred pattern. This array of processes is used as the basis for fabricating individual layers of a device (eg, IC). The substrate can then be subjected to various processes such as etching, ion implantation (doping), metallization, oxidation, chemical mechanical polishing, etc., all of which are intended to finish the individual layers of the device. If several layers are required in the device, the entire procedure or variations thereof are repeated for each layer. Ultimately, there will be a device in each target portion on the substrate. The devices are then separated from each other by techniques such as dicing or sawing, whereby individual devices can be mounted on a carrier, connected to pins, and so on.

Fabricating devices, such as semiconductor devices, typically involves processing substrates (eg, semiconductor wafers) using several fabrication processes to form the various features and layers of the devices. Such layers and features are typically fabricated and processed using, for example, deposition, lithography, etching, chemical mechanical polishing, ion implantation, and/or other procedures. Multiple devices can be fabricated on multiple dies on a substrate and then separated into individual devices. This device fabrication process can be considered as a patterning process. The patterning process involves performing a patterning step (such as optical and/or nanoimprint lithography) using a patterning device in a patterning device to transfer the pattern on the patterning device to a substrate, and the patterning process usually depends on Situations involve one or more associated pattern processing steps, such as resist development by a developing device, baking of the substrate using a bake tool, etching with a pattern using an etching device, and so on. Additionally, one or more metrology procedures are typically involved in the patterning procedure.

Lithography is a step in the fabrication of devices such as ICs in which a pattern formed on a substrate defines the functional elements of the device, such as microprocessors, memory chips, and the like. Similar lithography techniques are also used to form flat panel displays, microelectromechanical systems (MEMS), and other devices.

As semiconductor manufacturing processes have continued to advance, the size of functional elements has continued to decrease over the decades while the number of functional elements such as transistors per device has steadily increased, following what is commonly referred to as "Moore's Law". (Moore's law)". With current state-of-the-art, the device layer is fabricated using lithography equipment that projects the design layout onto the substrate using illumination from a deep ultraviolet illumination source, resulting in individual functional elements with dimensions well below 100 nm , that is, the size is less than half the wavelength of the radiation from the illumination source (eg, a 193 nm illumination source).

This procedure for printing features with dimensions smaller than the classical resolution limit of lithographic projection equipment is commonly referred to as low k ₁ lithography according to the resolution formula CD=k ₁ ×λ/NA, where λ is the wavelength of the radiation used ( Currently 248 nm or 193 nm in most cases), NA is the numerical aperture of the projection optics in the lithographic projection equipment, CD is the "critical dimension" (usually the smallest feature size printed), and k ₁ is the empirical resolution factor. In general, the smaller k ₁ is, the more difficult it becomes to reproduce a pattern on a substrate that resembles the shape and size planned by the designer in order to achieve a specific electrical functionality and performance. To overcome these difficulties, complex fine-tuning steps are applied to lithographic projection equipment, design layouts or patterning devices. These steps include, for example but not limited to, optimization of NA and optical coherence settings, custom illumination schemes, use of phase-shift patterning devices, optical proximity correction (OPC, sometimes referred to as "optical and Program Correction"), or other methods commonly defined as "Resolution Enhancement Technology" (RET). The term "projection optics" as used herein should be interpreted broadly to encompass various types of optical systems including, for example, refractive optics, reflective optics, apertures, and catadioptric optics. The term "projection optics" may also include components operating according to any of these design types for collectively or singularly directing, shaping or controlling a projection radiation beam. The term "projection optics" may include any optical component in a lithographic projection device, regardless of where the optical component is positioned on the optical path of the lithographic projection device. The projection optics may include optical components for shaping, conditioning and/or projecting radiation from the source before it passes through the patterning device, and/or for shaping, conditioning and/or projecting the radiation after it passes through the patterning device Optical components that project this radiation. Projection optics generally exclude light sources and patterning devices.

According to one embodiment, a cleaning tool for cleaning a portion of a lithography apparatus is provided. The cleaning tool includes a body configured to be inserted into the lithography apparatus; and a cleaning film with a first side configured to attach to a surface of the cleaning tool, and the cleaning A second side of the membrane is at least partially covered by a cleaning material, the second side being opposite the first side. The cleaning film is configured to prevent the cleaning material from contacting the surface of the cleaning tool, and the cleaning material is configured to clean the portion of the lithography apparatus upon contact.

According to another embodiment, a method for cleaning a portion of a lithographic apparatus using a cleaning tool for cleaning a portion of a lithographic apparatus is provided. The cleaning tool includes a body configured to be inserted into the lithography apparatus; and a cleaning film with a first side configured to attach to a surface of the cleaning tool, and the cleaning A second side of the membrane is at least partially covered by a cleaning material, the second side being opposite the first side. The cleaning film includes a transparent portion through which one or more features on the surface of the cleaning tool can be read, and the cleaning material is configured to clean the portion of the lithography apparatus upon contact.

According to one embodiment, a method for cleaning a portion of a lithography apparatus using a cleaning tool comprising one or more cleaning films is provided. The method includes: inserting the cleaning tool into the lithography apparatus via a tool handler; contacting the one or more cleaning films of the cleaning tool with the portion of the lithography apparatus to be cleaned via the tool handler and cleaning the portion of the lithography apparatus with the one or more cleaning films of the cleaning tool via the tool handler. The cleaning step includes moving the cleaning tool relative to the portion of the lithography apparatus for a specified scrub time or cycle.

According to another embodiment, there is provided a computer program product comprising a non-transitory computer-readable medium having recorded thereon instructions which, when executed by a computer, perform any of the methods described above. one.

In general, a mask or reticle can be a block of transparent material covered with a pattern defined by different opaque materials. Various masks are fed into lithography equipment and used to form semiconductor device layers. The pattern defined on a given mask or reticle corresponds to features created in one or more layers of the semiconductor device. Often, a plurality of masks or reticles are automatically fed into the lithography equipment during fabrication and used to form the corresponding layers of the semiconductor device. Clamps in lithography equipment, such as reticle stage reticle clamps, are used to secure a mask or reticle during processing. These fixtures require periodic cleaning. Typically, cleaning requires stopping the lithography equipment and manufacturing process. Cleaning is performed manually by a technician and takes several hours to complete.

Advantageously, the present systems and methods provide a cleaning tool configured to clean the clamps and/or associated membranes of the lithography apparatus in situ while the lithography apparatus continues to operate. The clamp includes several components configured to support the chuck body and provide connection to the chuck body. The diaphragm is the part of the jig that is in contact with the reticle. The cleaning tool is configured to be automatically inserted into and disposed of by the lithography apparatus just as any other mask or reticle is automatically inserted into and disposed of by the lithography apparatus. Using this cleaning tool to clean lithography equipment saves hours of downtime associated with previous cleaning methods. Additionally, in some embodiments, the present system is configured to avoid contamination of the lithographic apparatus by material removed from the cleaned (reticle stage reticle) fixtures and/or their associated membranes. Other parts, such as the reticle handler robotic gripper, are described below.

In some embodiments, the cleaning tool includes a cleaning reticle configured with an internal illumination source. The illumination source is configured to illuminate internal cleaning reticle identification features. These identification features are used by the camera of the lithography equipment to identify and track the location of the cleaning reticle. Advantageously, the illumination source and internal identification features allow the cleaning material to completely cover the cleaning surface of the cleaning reticle without obscuring the identification features from the camera. In addition, the outer surface of the cleaning reticle opposite the cleaning surface can be kept smooth for clamping by the lithography equipment.

Although specific reference may be made herein to the fabrication of integrated circuits (ICs), it should be understood that the descriptions herein have many other possible applications. For example, the embodiments can be used in the manufacture of integrated optical systems, guidance and detection patterns for magnetic domain memories, liquid crystal display panels, thin film magnetic heads, and the like. Those skilled in the art will appreciate that any use of the terms "reticle," "wafer," or "die" herein in the context of such alternate applications should be considered as separate and more general terms. "Mask", "Substrate" and "Target part" are interchangeable. Additionally, any use of the terms "reticle" or "mask" herein may be considered synonymous with the more general term "patterning device."

As an introduction, Figure 1 schematically depicts an embodiment of a lithography apparatus LA that may be included in and/or associated with the present system and/or method. The apparatus comprises: an illumination system (illuminator) IL configured to condition a radiation beam B (e.g., UV radiation, DUV radiation, or EUV radiation); a support structure (e.g., a mask table) MT constructed to support a patterned device (e.g., mask) MA, and is connected to a first positioner PM configured to accurately position the patterning device according to certain parameters; a substrate stage (e.g., wafer stage) WT (e.g., WTa, WTb, or both) configured to hold a substrate (e.g., a resist-coated wafer) W and coupled to a second positioner PW configured to accurately position the substrate according to certain parameters; and the projection A system (e.g. a refractive projection lens system) PS configured to project the pattern imparted to the radiation beam B by the patterning device MA onto a target portion C of the substrate W (e.g. comprising one or more dies and often referred to as field )superior. The projection system is supported on a reference frame (RF).

As depicted, the device is of the transmissive type (eg, using a transmissive mask). Alternatively, the device may be of the reflective type (eg using a programmable mirror array of the type mentioned above, or using a reflective mask).

The illuminator IL receives a radiation beam from a radiation source SO. For example, when the radiation source is an excimer laser, the radiation source and the lithography apparatus can be separate entities. In these cases the source is not considered to form part of the lithography apparatus and the radiation beam is delivered from the source SO to the illuminator IL by means of a beam delivery system BD comprising, for example, suitable guiding mirrors and/or beam expanders. In other cases, for example, when the source is a mercury lamp, the source may be an integral part of the device. The radiation source SO and the illuminator IL together with the beam delivery system BD may be referred to as a radiation system if desired.

The illuminator IL can modify the intensity distribution of the light beam. The illuminator may be configured to limit the radial extent of the radiation beam such that the intensity distribution within the annular region in the pupil plane of the illuminator IL is non-zero. Additionally or alternatively, the illuminator IL is operable to limit the distribution of the light beam in the pupil plane such that the intensity distribution in a plurality of equally spaced segments in the pupil plane is non-zero. The intensity distribution of the radiation beam in the pupil plane of the illuminator IL may be referred to as an illumination pattern.

The illuminator IL may comprise an adjuster AD configured to adjust the (angular/spatial) intensity distribution of the light beam. Typically, at least the outer radial extent and/or the inner radial extent (commonly referred to as σouter and σinner, respectively) of the intensity distribution in the pupil plane of the illuminator can be adjusted. The illuminator IL is operable to vary the angular distribution of the light beam. For example, the illuminator is operable to vary the number and angular extent of segments in the pupil plane for which the intensity distribution is non-zero. By adjusting the intensity distribution of the light beam in the pupil plane of the illuminator, different illumination modes can be achieved. For example, by limiting the radial and angular extent of the intensity distribution in the pupil plane of the illuminator IL, the intensity distribution may have a multipolar distribution, such as a dipole, quadrupole or hexapole distribution. The desired illumination pattern can be obtained, for example, by inserting optics into the illuminator IL or using a spatial light modulator.

The illuminator IL is operable to alter the polarization of the light beam and is operable to adjust the polarization using the adjuster AD. The polarization state of a radiation beam traversing the pupil plane of the illuminator IL may be referred to as the polarization mode. Using different polarization modes may allow greater contrast in the image formed on the substrate W to be achieved. The radiation beam can be unpolarized. Alternatively, the illuminator may be configured to linearly polarize the radiation beam. The polarization direction of the radiation beam may vary across the pupil plane of the illuminator IL. The polarization direction of the radiation may be different in different regions in the pupil plane of the illuminator IL. The polarization state of the radiation can be chosen depending on the illumination mode. For a multi-pole illumination mode, the polarization of each pole of the radiation beam may be substantially perpendicular to the position vector of the other pole in the pupil plane of the illuminator IL. For example, for a dipole illumination mode, radiation may be linearly polarized in a direction substantially perpendicular to a line bisecting two opposing segments of the dipole. The radiation beam can be polarized in one of two different orthogonal directions, which can be referred to as the X polarization state and the Y polarization state. For a quadrupole illumination pattern, radiation in a segment of each pole may be linearly polarized in a direction substantially perpendicular to a line bisecting that segment. This polarization mode may be referred to as XY polarization. Similarly, for a hexapole illumination pattern, radiation in a segment of each pole may be linearly polarized in a direction substantially perpendicular to a line bisecting that segment. This polarization mode may be referred to as TE polarization.

Additionally, the illuminator IL typically includes various other components, such as an integrator IN and a condenser CO. The illumination system may include various types of optical components for directing, shaping, or controlling radiation, such as refractive, reflective, magnetic, electromagnetic, electrostatic, or other types of optical components, or any combination thereof. Thus, the illuminator provides a conditioned radiation beam B with a desired uniformity and intensity distribution in its cross-section.

The support structure MT supports the patterned device in a manner that depends on the orientation of the patterned device, the design of the lithography apparatus, and other conditions such as whether the patterned device is held in a vacuum environment. The support structure can hold the patterned device using mechanical, vacuum, electrostatic or other clamping techniques. The support structure can be, for example, a frame or table, which can be fixed or moveable as desired. The support structure can ensure that the patterning device is in a desired position, for example, relative to the projection system.

The term "patterning device" as used herein should be interpreted broadly to refer to any device that can be used to impart a pattern in a targeted portion of a substrate. In an embodiment, the patterning device is any device that can be used to impart a radiation beam with a pattern in its cross-section to form a pattern in a target portion of the substrate. It should be noted that, for example, if the pattern imparted to the radiation beam includes phase-shifting features or so-called assist features, the pattern may not correspond exactly to the desired pattern in the target portion of the substrate. Typically, the pattern imparted to the radiation beam will correspond to a specific functional layer in the device (such as an integrated circuit) produced in the target portion of the device.

The patterning device can be transmissive or reflective. Examples of patterning devices include masks, programmable mirror arrays, and programmable LCD panels. Masks are well known in lithography, and include mask types such as binary, alternating phase shift, and attenuated phase shift, as well as various hybrid mask types. One example of a programmable mirror array uses a matrix configuration of small mirrors, each of which can be individually tilted in order to reflect an incident radiation beam in different directions. The tilted mirrors impart a pattern in the radiation beam reflected by the mirror matrix.

The term "projection system" as used herein should be interpreted broadly to cover any type of projection system suitable for the exposure radiation used or for other factors such as the use of immersion liquid or the use of a vacuum, including refractive, reflective, Catadioptric, magnetic, electromagnetic and electrostatic optical systems, or any combination thereof. Any use of the term "projection lens" herein may be considered synonymous with the more general term "projection system".

The projection system PS has an optical transfer function that can be non-uniform and can affect the pattern imaged on the substrate W. For unpolarized radiation, such effects are best described by two scalar maps that describe the transmission (apodization) and apodization of radiation exiting the projection system PS as a function of its position in the pupil plane Relative phase (aberration). These scalar maps, which may be referred to as transmittance maps and relative phase maps, can be expressed as linear combinations of the complete set of basis functions. A particularly suitable set is the Zernike polynomials, which form a set of orthogonal polynomials defined on the unit circle. The determination of each scalar map may involve determining the coefficients in this expansion. Since the Renicke polynomials are orthogonal on the unit circle, it can be determined that any Nick coefficient.

The transmission map and the relative phase map are field and system dependent. That is, in general, each projection system PS will have a different Zernike expansion for each field point (ie, for each spatial position in its image plane). The wavefront (i.e. , the locus of points with the same phase) to determine the relative phase of the projection system PS in its pupil plane. Shearing interferometers are common path interferometers and thus, advantageously, do not require a secondary reference beam to measure the wavefront. The shearing interferometer may comprise: a diffraction grating, e.g., a two-dimensional grid in the image plane (i.e., substrate table WTa or WTb) of the projection system; and a detector configured to detect and interact with the projection system PS The interference pattern in the plane conjugate to the pupil plane of . The interference pattern is related to the derivative of the phase of the radiation with respect to the coordinates in the pupil plane in the shear direction. The detector may include an array of sensing elements, such as charge-coupled devices (CCDs).

The projection system PS of a lithography apparatus may not produce visible fringes, and therefore, phase stepping techniques such as moving a diffraction grating may be used to enhance the accuracy of wavefront determination. Stepping can be performed in the plane of the diffraction grating and in a direction perpendicular to the scanning direction of the measurement. The stepping range may be one grating period, and at least three (uniformly distributed) phase steps may be used. Thus, for example, three scan measurements may be performed in the y-direction, each scan measurement being performed for a different position in the x-direction. This stepping of the diffraction grating effectively transforms phase changes into intensity changes, allowing phase information to be determined. The grating can be stepped in a direction perpendicular to the diffraction grating (z direction) to calibrate the detector.

The diffraction grating may be scanned sequentially in two perpendicular directions, which may coincide with the axes (x and y) of the coordinate system of the projection system PS or may be at an angle such as 45 degrees to these axes. Scanning may be performed over an integer number of raster periods (eg, one raster period). Scanning averages the phase change in one direction, allowing reconstruction of the phase change in the other direction. This situation allows the determination of a changing wavefront in terms of two directions.

The distance between the projection system PS and the projection system PS can be measured by projecting, for example, radiation from a point source in the object plane of the projection system PS (i.e., the plane of the patterning device MA) through the projection system PS and using a detector. The radiation intensity in the plane conjugate to the pupil plane is used to determine the transmission (apodization) of the projection system PS in its pupil plane. The same detector used to measure the wavefront to determine the aberrations can be used.

Projection system PS may include a plurality of optical (e.g., lenses) elements and may further include an adjustment mechanism configured to adjust one or more of the optical elements so as to correct for aberrations (light across the field phase change in the pupil plane). To achieve this correction, the adjustment mechanism is operable to manipulate one or more optical (eg, lenses) elements within the projection system PS in one or more different ways. The projection system can have a coordinate system whose optical axis extends in the z direction. The adjustment mechanism is operable to perform any combination of: displacing one or more optical elements; tilting one or more optical elements; and/or deforming one or more optical elements. The displacement of the optical elements can be in any direction (x, y, z or a combination thereof). Tilting of optical elements is usually performed by rotation about axes in the x and/or y directions from a plane perpendicular to the optical axis, but rotation about the z axis can be used for non-rotationally symmetric aspheric optical elements. Deformations of optical elements may include low frequency shapes (such as astigmatism) and/or high frequency shapes (such as free-form aspheric surfaces). Optics can be performed, for example, by using one or more actuators to apply force to one or more sides of the optical element and/or by using one or more heating elements to heat one or more selected regions of the optical element. Component deformation. In general, it is not possible to adjust the projection system PS to correct for apodization (transmission variation across the pupil plane). The transmission image of the projection system PS can be used in designing the patterning device (eg mask) MA for the lithography apparatus LA. Using computational lithography, the patterning device MA may be designed to at least partially correct for apodization.

A lithographic apparatus may be of the type having two (dual stage) or more stages (e.g. two or more substrate stages WTa, WTb, two or more patterning device stages, without dedicated e.g. facilitation Type of substrate table WTa and table WTb) below the projection system in case of substrates for measurement and/or cleaning etc. In such "multi-stage" machines, additional tables may be used in parallel, or preparatory steps may be performed on one or more tables while one or more other tables are used for exposure. For example, alignment measurements using the alignment sensor AS and/or level (height, inclination, etc.) measurements using the level sensor LS can be performed.

Lithographic apparatus can also be of the type in which at least part of the substrate can be covered by a liquid with a relatively high refractive index, such as water, to fill the space between the projection system and the substrate. The immersion liquid can also be applied to other spaces in the lithography apparatus, for example, the space between the patterning device and the projection system. Wetting techniques are well known in the art for increasing the numerical aperture of projection systems. The term "wet" as used herein does not mean that a structure such as a substrate must be submerged in a liquid, but only means that the liquid is between the projection system and the substrate during exposure.

In operation of the lithography apparatus, a radiation beam is conditioned and provided by an illumination system IL. The radiation beam B is incident on and patterned by a patterning device (eg mask) MA held on a support structure (eg mask table) MT. Having traversed the patterning device MA, the radiation beam B passes through a projection system PS which focuses the beam onto a target portion C of the substrate W. By means of a second positioner PW and a position sensor IF (e.g. an interferometric device, a linear encoder, a 2D encoder or a capacitive sensor), the substrate table WT can be moved accurately, e.g. Located in the path of the radiation beam B. Similarly, a first positioner PM and another position sensor (which is not explicitly depicted in FIG. The path of B accurately positions the patterning device MA. In general, the movement of the support structure MT can be achieved by means of a long stroke module (coarse positioning) and a short stroke module (fine positioning) forming part of the first positioner PM. Similarly, movement of the substrate table WT may be achieved using a long-stroke module and a short-stroke module forming part of the second positioner PW. In the case of a stepper (as opposed to a scanner), the support structure MT may only be connected to a short-stroke actuator, or may be fixed. Patterning device MA and substrate W may be aligned using patterning device alignment marks M1 , M2 and substrate alignment marks P1 , P2 . Although substrate alignment marks as illustrated occupy dedicated target portions, these substrate alignment marks may be located in the spaces between target portions (such marks are referred to as scribe line alignment marks). Similarly, where more than one die is provided on the patterning device MA, the patterning device alignment marks may be located between the dies.

The depicted apparatus can be used in at least one of the following modes: 1. In a stepping mode, the support structure MT and the substrate table WT are held while the pattern imparted to the radiation beam is projected onto the target portion C at one time Substantially still (ie, single static exposure). Next, the substrate table WT is shifted in the X and/or Y direction so that different target portions C can be exposed. In step mode, the maximum size of the exposure field limits the size of the target portion C imaged in a single static exposure. 2. In scanning mode, the support structure MT and the substrate table WT are scanned synchronously while projecting the pattern imparted to the radiation beam onto the target portion C (ie a single dynamic exposure). The velocity and direction of the substrate table WT relative to the support structure MT can be determined by the magnification (reduction) and image inversion characteristics of the projection system PS. In scanning mode, the maximum size of the exposure field limits the width (in the non-scanning direction) of the target portion in a single dynamic exposure, while the length of the scanning motion determines the length (in the scanning direction) of the target portion. 3. In another mode, while the pattern imparted to the radiation beam is projected onto the target portion C, the support structure MT is held substantially stationary, thereby holding the programmable patterning device, and the substrate table WT is moved or scanned. In this mode, a pulsed radiation source is typically employed and the programmable patterning device is refreshed as needed after each movement of the substrate table WT or between successive radiation pulses during a scan. This mode of operation is readily applicable to maskless lithography utilizing programmable patterning devices such as programmable mirror arrays of the type mentioned above.

Combinations and/or variations of the above modes of use or entirely different modes of use may also be employed.

Substrates referred to herein may be processed, before or after exposure, in, for example, a coating development system (a tool that typically applies a layer of resist to a substrate and develops the exposed resist) or a metrology or inspection tool. Where applicable, the disclosure herein may be applied to these and other substrate processing tools. In addition, a substrate may be processed more than once, eg, in order to produce a multilayer IC, so that the term substrate as used herein may also refer to a substrate that already includes multiple processed layers.

The terms "radiation" and "beam" as used herein encompass all types of electromagnetic radiation, including ultraviolet (UV) or deep ultraviolet (DUV) radiation (e.g. wavelength) and extreme ultraviolet (EUV) radiation (for example having a wavelength in the range of 5 nm to 20 nm), and particle beams such as ion beams or electron beams.

Various patterns on or provided by a patterning device may have different process windows. That is, the space of processing variables from which the pattern will be generated within the specification. Examples of pattern specifications for potential systemic defects include inspection CD, necking, line pullback, line thinning, edge placement, overlap, resist top loss, resist undercutting, and/or bridging. Process windows for patterns on a patterned device or region thereof may be obtained by merging (eg, overlapping) the process windows for each individual pattern. The boundaries of the process windows of the group of patterns include the boundaries of the process windows of some of the individual patterns. In other words, these individual patterns limit the process window of the pattern group. These patterns may be referred to as "hot spots" or "process window limited patterns (PWLP)", "hot spots" and "process window limited patterns (PWLP)" may be used interchangeably herein. When controlling a portion of the patterning process, it is possible and economical to focus on hot spots. When the hot spot is not defective, most likely the other patterns are not defective.

As shown in FIG. 2, the lithography apparatus LA may form part of a lithography manufacturing cell LC (also sometimes referred to as a lithocell or cluster), which also includes a Equipment for pre-exposure procedures and post-exposure procedures. Conventionally, such equipment includes one or more spin coaters SC for depositing one or more resist layers, one or more developers for developing exposed resist, one or more cooling Plate CH and/or one or more baking plates BK. A substrate handler or robot RO picks up one or more substrates from input/output ports I/O1, I/O2, moves them between different process tools and delivers them to a load magazine LB of a lithography tool. These devices, which are often collectively referred to as the coating and developing system (track), are controlled by the coating and developing system control unit TCU. The coating and developing system control unit TCU itself is controlled by the supervisory control system SCS, and the supervisory control system SCS is also controlled by lithography The unit LACU controls the lithography equipment. Accordingly, different equipment can be operated to maximize throughput and process efficiency.

In order to correctly and consistently expose a substrate exposed by a lithographic apparatus and/or to monitor a portion of a patterning process (e.g., a device fabrication process) that includes at least one pattern transfer step (e.g., an optical lithography step), inspection is required. A substrate or other object to measure or determine one or more properties, such as alignment, overlay (which may, for example, be between structures in an overlying layer or have been provided separately to a layer by, for example, a double patterning process between structures in the same layer), line thickness, critical dimension (CD), focus shift, material properties, etc. For example, contamination on a reticle holder (eg, as described herein) can adversely affect overlay because clamping the reticle across such contamination will distort the reticle. Accordingly, a fabrication facility in which a lithographic fabrication cell LC is located typically also includes a metrology system that measures some or all of the substrates W (FIG. 1 ) that have been processed in the lithographic fabrication cell or the lithographic fabrication cell other objects in it. The metrology system may be part of the lithographic fabrication unit LC, for example it may be part of the lithographic apparatus LA (such as the alignment sensor AS (FIG. 1)).

For example, the one or more measured parameters may include: alignment between sequential layers formed in or on the patterned substrate, overlay, features formed in or on the patterned substrate, for example critical dimension (CD) (eg, critical linewidth), focus or focus error of the photolithography step, dose or dose error of the photolithography step, optical aberration of the photolithography step, and the like. This measurement can be performed on targets on the product substrate itself and/or on dedicated metrology targets provided on the substrate. Measurements may be performed after resist development but before etching, after etching, after deposition, and/or at other times.

Various techniques exist for metrology of the structures formed in the patterning process, including the use of scanning electron microscopes, image-based metrology tools, and/or various specialized tools. As discussed above, a rapid and non-invasive form of specialized metrology tool is a metrology tool in which a beam of radiation is directed onto a target on the surface of a substrate and properties of the scattered (diffracted/reflected) beam are measured. By evaluating one or more properties of radiation scattered by the substrate, one or more properties of the substrate can be determined. This can be called diffraction-based metrology. One such application of this diffraction-based metrology is in the measurement of characteristic asymmetries within objects. This measure of feature asymmetry can be used, for example, as a measure of overlay, but other applications are also known. For example, asymmetry can be measured by comparing opposite portions of the diffraction spectrum (eg, comparing the -1 order and the +1 order in the diffraction spectrum of a periodic grating). This measurement can be done as described above, and as described, for example, in US Patent Application Publication US 2006-066855, which is incorporated herein by reference in its entirety. Another application of diffraction-based metrology is in the measurement of feature width (CD) within an object.

Thus, in a device fabrication process (eg, a patterning process, a lithography process, etc.), a substrate or other object may be subjected to various types of measurements during or after the process. Metrology can determine whether a particular substrate is defective, can establish adjustments to the process and equipment used in the process (for example, aligning two layers on a substrate or aligning a patterned device to a substrate), can measure performance of programs and equipment, or may be used for other purposes. Examples of metrology include optical imaging (e.g., optical microscopy), non-imaging optical metrology (e.g., diffraction-based metrology, such as ASML YieldStar metrology tool, ASML SMASH metrology system), mechanical metrology (e.g., profiling using an electric pen, atomic force microscopy (AFM)) and/or non-optical imaging such as scanning electron microscopy (SEM). The Smart Alignment Sensor Hybrid (SMASH) system, as described in U.S. Patent No. 6,961,116, which is incorporated herein by reference in its entirety, employs a self-referencing interferometer that produces two pairs of alignment markers. superimposed and relatively rotated images, detect the intensity in the pupil plane interfering the Fourier transforms of the images, and extract positional information from the phase difference between the diffraction orders of the two images, which is expressed by the Intensity variation in the interferometric order.

The metrology results may be provided directly or indirectly to the supervisory control system SCS. If an error is detected, exposure of subsequent substrates can be performed (especially if detection can be done quickly and quickly enough that one or more other substrates of the lot remain to be exposed) and/or exposure of exposed substrates can be performed. Subsequent exposures are adjusted. In addition, exposed substrates can be stripped and reworked to improve yield, or discarded, thereby avoiding further processing of substrates known to be defective. In the event that only some target portions of the substrate are defective, further exposures may be performed only on those target portions that meet specification.

Within the metrology system MET, metrology equipment is used to determine one or more properties of a substrate, and in particular to determine how one or more properties vary from one substrate to another or from layer to layer on the same substrate. As mentioned above, the metrology apparatus may be integrated into the lithography apparatus LA or lithography cell LC, or may be a stand-alone device.

For metrology, one or more targets may be provided on the substrate. In an embodiment, the target is specially designed and may include periodic structures. In one embodiment, the target is a portion of the device pattern, such as a periodic structure of the device pattern. In one embodiment, the device pattern is a periodic structure of a memory device (eg, bipolar transistor (BPT), bit line contact (BLC), etc. structure).

In one embodiment, the object on the substrate may comprise one or more 1-D periodic structures (eg, gratings) that are printed such that after development, the periodic structure features are formed from solid resist lines. In one embodiment, the target may comprise one or more 2-D periodic structures (e.g., gratings) that are printed such that after development, the one or more periodic structures are formed from solids in the resist. Resist post or via formation. The rods, posts, or vias may alternatively be etched into the substrate (eg, etched into one or more layers on the substrate).

In one embodiment, one of the parameters of interest for the patterning process is overlay. Overlays can be measured using dark field scattermetry, where the zero diffraction orders (corresponding to specular reflections) are blocked and only higher orders are processed. Examples of dark field metrology can be found in PCT Patent Application Publication Nos. WO 2009/078708 and WO 2009/106279, the entire contents of which patent application publications are hereby incorporated by reference. Further developments of the technology already described in US Patent Application Publications US2011-0027704, US2011-0043791 and US2012-0242970, the entire contents of which patent application publications are hereby incorporated by reference. Diffraction-based overlays using dark-field detection of diffraction orders enable overlay measurements of smaller targets. These targets may be smaller than the illumination spot and may be surrounded by device product structures on the substrate W. In one embodiment, multiple targets may be measured in one radiation capture.

As lithography nodes continue to shrink, increasingly complex wafer designs can be implemented. Various tools and/or techniques may be used by designers to ensure that complex designs are accurately transferred to physical wafers. Such tools and techniques may include mask optimization, source mask optimization (SMO), OPC, design for control, and/or other tools and/or techniques. For example, a source mask optimization procedure is described in US Patent No. 9,588,438, entitled "Optimization Flows of Source, Mask and Projection Optics," which is incorporated by reference in its entirety.

The present systems and/or methods may be used as stand-alone tools and/or techniques, and/or in conjunction with other semiconductor manufacturing processes, to enhance accurate transfer of complex designs to physical wafers.

As described above, the present system includes a cleaning tool configured to clean a portion of the lithography apparatus in situ while the lithography apparatus continues to operate. For example, a cleaning tool may simply replace a typical reticle inserted into a lithography apparatus. The lithography apparatus can move the cleaning tool through typical movements and/or positions of the replaced reticle such that no special adjustments to the cleaning tool are required during operation of the lithography apparatus. In some embodiments, the portion of the lithographic apparatus to be cleaned includes the reticle stage, the reticle holder, the associated diaphragm, and/or other portions of the lithographic apparatus. The cleaning tool is configured to be automatically inserted into and handled (e.g., moved, rotated, etc.) by the lithography apparatus just as any other mask or reticle is automatically inserted into and handled by the lithography apparatus. Same with equipment disposal. Using this cleaning tool to clean lithography equipment saves hours of downtime associated with previous cleaning methods. In addition, the system is configured to avoid contaminating other parts of the lithography tool (such as the reticle handler robotic gripper) by material removed from the gripper being cleaned (reticle stage reticle) tightener), as described below. The cleaning tool is configured to be inserted into the lithography apparatus. In one embodiment, the cleaning tool is inserted into the container to prevent contamination from spreading to other parts of the lithography apparatus during and/or after cleaning. In one embodiment, cleaning tools are blocked from access to the reticle handler or other parts of the lithography tool based on, for example, the cleaning reticle identifier (ID) (e.g., via software-based commands) to avoid contamination (e.g., ) Internal Reticle Library (IRL) and IRIS (eg, automated inspection systems). Another example of a cleaning tool, tool handler, and reticle handler robotic gripper is discussed in U.S. Application Serial No. 62/931,864, filed November 7, 2019, which is incorporated by reference in its entirety. into this article.

By way of non-limiting example, FIGS. 3A and 3B illustrate (a portion of) a lithography apparatus 300 (eg, similar or identical to the lithography apparatus shown in FIG. 1 ). 3A illustrates the present system 301 including cleaning tools 302 and/or other components; side is visible in FIG. 3A ), and/or other components. In one embodiment, the lithography apparatus includes a compartment configured to store one or more instances of cleaning tool 302 . For example, the compartment may have a plurality of slots, each slot carrying a cleaning tool 302 . In some embodiments, lithography apparatus 300 is configured for deep ultraviolet (DUV) lithography.

In some embodiments, the cleaning tool 302 includes cleaning the reticle and/or other components. In some embodiments, the tool handlers 306, 307, 308 include a reticle handler turret gripper 306, a reticle handler robot gripper 307 (with associated Fixtures, etc. 308) and/or other components. The reticle handler robot gripper 307 may, for example, move the reticle from the bay 320 (eg, after a user places the reticle in the bay 320 ). The tool handler 306 can move the reticle, for example, from the reticle handler robot gripper 307 to the reticle gripper 312 . The lithography apparatus 300 may include various other mechanical components 322 (translation mechanisms, lift mechanisms, rotation mechanisms, motors, power generation and transmission components, structural components, etc.) configured to facilitate movement and control of the cleaning tool 302 through the lithography apparatus 300 . Examples of tool handlers are discussed in further detail in US Application Serial No. 62/931,864, filed November 7, 2019, which is incorporated herein by reference in its entirety.

Cleaning tool 302 is configured to clean, in situ, chuck 312 and/or an associated membrane of lithography apparatus 300 (eg, the membrane of the chuck in contact with the bottom surface of the reticle) of lithography apparatus 300 while lithography apparatus 300 continues to operate. The cleaning tool 302 is configured to be automatically inserted into and handled by the lithography apparatus 300 just as any other mask or reticle 316 is automatically inserted into and handled by the lithography apparatus 300 Same deal. For example, cleaning tool 302 is sized and shaped to be inserted into lithography apparatus 300 at typical insertion point 318 using typical insertion methods, just as any other reticle 316 would be inserted into apparatus 300 .

FIG. 3B is an enlarged view of a portion of device 300 . 3B shows cleaning tool 302 tool handler 306, reticle stage 310, reticle stage reticle holder 312 (only one side is visible in FIG. 3B), mechanical assembly 322, reticle Reticle handler robotic gripper 307 and/or other components. As shown in FIG. 3B the tool handler 306 is configured to move the cleaning tool 302 from the reticle handler robotic gripper 307 to the reticle stage 310 and the reticle holder 312, thus cleaning Tool 302 may be used to clean jig 312 in situ. Moving the cleaning tool 302 may include moving the cleaning tool toward or away from the jig 312 in horizontal, vertical, and/or other directions. Tool handler 306 and/or reticle handler robotic gripper 307 may include various motors, translators, rotation components, grippers, clips, power supplies, power transfer components, vacuum mechanisms, and/or facilitate cleaning of tool 302. Other components of the move.

4 illustrates a top view of a reticle stage 310, reticle holder 312, and/or associated diaphragm 410, according to one embodiment. In some embodiments, for example, clamp 312 and/or associated membrane 410 may be a target surface to be cleaned by cleaning tool 302 . Typically, the membrane 410 contacts the bottom of the reticle in the area where the barcode (and/or other identification data) is printed. Printing is applied using chrome, MoSi or other materials. When the reticle is clamped via vacuum and then scanned (eg, for identification purposes), high contact pressure can initiate molecular level bonding between the reticle material and the gripper 312 material. When separated, a small portion of the reticle material is pulled out and held on the surface of the membrane 410 . Hence the need for cleaning. In effect, the reticle handler turret gripper 306 (not shown in FIG. 4 ) will lower the cleaning tool (reticle) 302 (eg, into the page) over the clamp 312 , associated membrane 410 .

In one embodiment, the reticle clamping mechanism may be a vacuum clamp, an electrostatic clamp, or other known clamping mechanisms. In a vacuum clamp mechanism, the membrane 410 may include a vacuum pad 415 at one or more locations on the surface of the membrane 410 . When the reticle R1 is clamped, the reticle R1 is in direct contact with the vacuum pads 415 and sits on the vacuum pads. Reticle material may be deposited on vacuum pad 415 when reticle R1 is contacted and then removed. The vacuum pad 415 has a nano-protrusion topography, or a nano-protrusion or nano-wave topography, as shown in the enlarged view, but at the nanometer scale. In one embodiment, the nano-bump topography is placed to avoid optical contact problems that arise when two extremely flat surfaces touch each other. Optical contact causes surfaces to stick together and come into optical contact. No such optical contact or bond is required between reticle R1 and reticle holder and/or associated septum. However, these nanobumps lead to increased contact stress. Therefore, when the reticle is clamped with short nanobumps or nanowave patterns of the vacuum pad 415, there is increased contact stress due to area reduction. The contact stress transfers the chrome coating on the body of the cleaning tool to the vacuum pad 415 . In one embodiment, cleaning tool 302 may be configured as discussed herein to clean chrome contamination. However, the present invention is not limited to cleaning specific contaminants. Depending on the contaminants to be cleaned, the cleaning tool 302 , especially the membranes (eg, F1 and F2 in FIG. 7 ), can be configured with a cleaning solution and used in an automated cleaning procedure (eg, in FIG. 9 ).

In one embodiment, the cleaning agent material (eg, shown in FIG. 7 ) on the cleaning tool 302 is in contact with the clamp 312 and/or the membrane 410 , or a vacuum pad 415 positioned on the membrane 410 . Furthermore, cleaning tool 302 may be configured to move (eg, using a tool handler) in a single dimension (eg, "x" according to the orientation of FIG. 4 or the horizontal dimension) to perform cleaning of vacuum pad 415 . However, in some embodiments, cleaning tool 302 may be configured to move in more than one dimension (eg, in the "x" and "y" dimensions) to properly engage the target cleaning surface.

5A and 5B illustrate different types of contaminants deposited on pad 415 . According to one embodiment, the contamination can be, for example, chromium particles from the reticle (eg, the white particles in FIG. 5A ), hard particles such as molybdenum disilicide (MoSi ₂ ) on the diaphragm of the reticle holder. Particles (eg, the white particles in Figure 5B). In one embodiment, contaminants such as hard particles that are large enough in size (e.g., 5 to 10 microns) can cause overregistration errors in substrates printed using the lithography equipment discussed herein, and after repeated printing program causing further overlay degradation.

In one embodiment, when contaminants remain on the membrane 410 or the pad 415 thereon, the reticle may stick to the membrane 410 and/or the pad 415 and cause rupture of the membrane. FIG. 5C illustrates fracture membranes 410 fractured at CRK1, CRK2, and CRK3 due to contaminants deposited on vacuum pads that were not cleaned between reuses of the reticle during the patterning process, according to one embodiment. instance. FIG. 5C also shows the vacuum holes 420 in the membrane 410 used during clamping of the reticle placed on the pad 415 . To avoid contamination related issues, manual diaphragm cleaning is typically performed which can consume at least four more hours of downtime and overall cost. The present cleaning tool 302 automates the cleaning process and reduces downtime to less than 20 minutes. Various features of the cleaning tool 302 and its automation that will reduce downtime and increase the availability of the lithography apparatus are discussed in detail below.

6 and 7 illustrate an example of a cleaning tool (eg, a reticle) 302 and a body 302' of the cleaning tool 302 to which a film carrying a cleaning agent material may be attached. In one example, the side of the body 302' to which the membrane (eg, F1 and F2 in FIG. 7) may be attached with the cleaning agent material may be referred to as the cleaning surface. In one embodiment, the body 302' of the cleaning tool 302 is shaped as a single block of material that is a rectangular shape. This is not intended to be limiting. The principles and/or features described below may be applied to the embodiments of the cleaning implement 302 shown in FIGS. middle.

In some embodiments, one or more portions of cleaning tool 302 may be formed from a transparent or nearly transparent material such as ultra-low thermal expansion quartz (SFS), and/or other materials. However, this requirement applies to lithography. Clean photomask (tool) 302 can be made of any number of materials, and the restriction is: external dimensions and quality comply with "SEMI standard P1 for Hard Surface Photomask Substrates" . In some embodiments, the cleaning implement 302 (as shown in FIG. 6 ) includes a cleaning surface 1100 (bottom B1 ) to which a membrane carrying a cleaning agent material (see, e.g., F1 and F2 in FIGS. 7 and 8 ) is attached. , one or more side surfaces 1104 and/or other components. In some embodiments, cleaning tool 302 also includes one or more identification features 1106 , 1108 . Identification features 1106 and 1108 may include pre-alignment marks 1106, barcodes 1108, and/or other identification features. In some embodiments, identification features 1106 and 1108 may be located on cleaning surface 1100 as shown in FIG. 6 .

FIG. 7 illustrates an example of a cleaning tool 302 for cleaning a portion of a lithographic apparatus. For example, portions of the reticle holder of the reticle stage (eg, the diaphragm and/or vacuum pad thereon). The cleaning tool 302 is configured to be inserted into the lithography apparatus and includes: a detergent material configured to clean a portion of the lithography apparatus when the lithography apparatus is in contact with it; and a film carrying the detergent material (e.g., F1 and/or F2). The membrane is configured to attach to the body 302' (see also FIG. 6) and prevent detergent material from contacting the surface of the body 302'. In one embodiment, the films (eg, F1 and/or F2) are removably attached to the surface of the cleaning tool. In one embodiment, the film (e.g., F1 and/or F2) includes a transparent portion through which one or more features on the surface of the cleaning implement are detected by optical sensors (e.g., a camera and a barcode reader). ) can be read. For example, the transparent portion is scotch tape.

Figure 8 illustrates an example structure of a film according to an embodiment. The film (for example, F1) may have a single-layer structure, a 2-layer structure, or a 3-layer structure. The invention is not limited to a particular layered structure. In a preferred embodiment, the film F1 comprises: a first layer L1 at least partially covered with a cleaning agent material, and a second layer configured to attach to the surface of the body and prevent the cleaning agent material from contacting the surface of the cleaning implement L3. The second layer L3 is configured to be disposed between the first layer L1 and the surface of the body of the cleaning tool 302 . In one embodiment, the first layer L1 material is a cleanroom microfiber wipe with features for efficient removal of particle contamination and enhanced absorbency of cleaning solutions. Also, the first layer can be made of a material that does not release the fiber, resist bleed or tear during/after cleaning. For example, the first layer L1 can be MiraWIPE®. For example, the cleaning solution applied to the first layer L1 is chrome etchant, deionized water, isopropanol or methanol. In one embodiment, the second layer L3 is transparent to allow one or more features on the cleaning to be readable by the tool handler (or an optical sensor associated with the tool handler). For example, the second layer L3 can be a clean room tape. In one embodiment, instead of replacing the Cr etchant, the cleanroom tape may be replaced with a clear (eg, optically clear) protective reticle coating over the standard/preset Cr reticle coating. In another embodiment, a non-chrome reticle coating may be used instead of the standard/preset Cr reticle coating. In yet another embodiment, instead of the standard/preset Cr reticle coat, no reticle coat may be applied.

In one embodiment, films F1 and/or F2 further comprise an adhesive layer L2 applied on a portion of the film. The adhesive layer L2 is provided between the first layer L1 and the second layer L3. The adhesive layer L2 is at least partially covered with an adhesive material on both sides of the adhesive layer L2. The adhesive keeps the second layer L3 adhered to the first layer L1 even when the films F1 and/or F2 are removed from the body of the cleaning tool 302 . For example, the adhesive layer L2 can be a layer coated with a double-sided adhesive (for example, 3M ^™ double-sided adhesive tape 410M). In one embodiment, the adhesive layer is uniformly applied under the first layer L1. Thus, during the cleaning procedure, the cleaning agent material on the first layer L1 will be in uniform contact with the part being cleaned. In one embodiment, it may be preferable to have a separate adhesive layer L2. Alternatively, the first layer L1 may be bottom-coated with an adhesive.

In one embodiment, the film includes one or more cutout portions associated with at least one or more of the following features: a tool handler for engaging a cleaning tool; a One or more gripper elements; or one or more identification features on the surface of the cleaning tool. Examples of cutout portions are further illustrated and discussed with respect to FIG. 7 . In one embodiment, one or more cutout portions are located within the first layer L1 (and the adhesive layer L2, in one embodiment) and not located within the second layer L3. As discussed herein, the one or more identification features include one or both of a barcode and an alignment mark readable (eg, via an optical sensor) by the second layer L3. In one embodiment, the one or more gripper elements include one or more vacuum holes provided on a portion of the lithography apparatus to grip the reticle via a vacuum gripper. Thus, the second layer L3 prevents cleaning materials and contaminants from contacting the cleaning tool 302, thereby keeping the barcode or identification features free from contamination.

In one embodiment, such as in FIGS. 7 and 11A-11B , film F1 is attached over one or more identification features at a first edge of the surface of the cleaning tool, one or more identification features being passed through the film. The second layer of F2 is readable (eg, via an optical sensor); and the other of the film F2 is attached to the second edge of the surface of the cleaning implement, the second edge being distal to and parallel to the first edge.

Referring back to FIG. 7 , the body 302 ′ of the cleaning tool 302 (eg, reticle) includes two films F1 and/or F2 attached at the edges. Films F1 and F2 are used to clean a portion of a lithography apparatus (eg, a diaphragm). In one embodiment, the cleaning surface 1100 of the cleaning tool 302 is partially covered by the films F1 and F2 carrying the cleaning material. In some embodiments, the cleaning material includes one or more different materials. The materials used to clean the diaphragm may vary depending on the contaminants to be removed. The cleaning material is configured to contact and clean the reticle stage 310 ( FIGS. 3A and 3B ), the reticle holder 312 ( FIGS. 3A and 3B ), and/or the associated membrane as described above.

As shown in FIG. 7 , films F1 and/or F2 with cleaning material include cutouts in the cleaning material, such as RC1 , VC1 , VC2 , BC1 , PAC1 , PAC2 , corresponding to the locations of, for example, identification features 1106 and 1108 , tool handler clamping position, fixture components. For example, cutout RC1 may be located at a corner corresponding to the clamping position of the tool handler. Cutouts VC1 and VC2 correspond to vacuum holes at the septum (eg, 410 ). Notch BC1 corresponds to the barcode. Notches PAC1 and PAC2 correspond to azimuth alignment marks that may be used to align cleaning tool 302 with a reticle stage and/or reticle holder. Cutouts corresponding to the locations of identification features 1106 and 1108 , tool handler clamp locations, and clamp element locations C1 and C2 may be formed by cutting and/or otherwise removing cleaning material in the area. Cuts in the cleaning material may be left because cleaning materials are typically opaque or nearly opaque, and identification features 1106 and 1108 are configured to be illuminated using cameras in lithography apparatus 300 ( FIGS. 3A and 3B ) To read, the illumination is passed into the cleaning tool 302 from the cleaning surface 1100 side of the cleaning tool 302 and out of the cleaning tool 302 through the identification surface 1102 .

In one embodiment, cutouts RC1 (eg, at the four corners) are located at the corners where the tool handler interface prevents contamination of the tool handler. For example, cutout RC1 prevents Cr etchant contamination of the tool handler interface. The cutouts VC1 and VC2 corresponding to the vacuum holes at the reticle prevent Cr etchant contamination of eg the Z-support or the reticle stage chuck vacuum line. Notches BC1 and PAC1 and PAC2 (corresponding to identification features such as barcodes and alignment marks on the cleaning tool) enable reticle identification (ID) and alignment to the reticle stage chuck. In addition, as previously mentioned, cleaning materials (e.g., some residual chrome cleaning fluid) can be prevented from entering the window and attacking features on the surface of the cleaning tool 302 (e.g., barcodes, objects, etc.) quasi-features). Thus, the film is suitable for several purposes, including cleaning desired portions of the lithographic apparatus, allowing readability of features on the cleaning tool 302, and preventing contamination, etching, or erosion of features on the cleaning tool 302.

In one embodiment, the cleaning tool 302 is configured to contact a cleaning agent material with a target surface (e.g., a vacuum pad) of a portion of a lithographic apparatus, and to contact the portion of the lithographic apparatus with respect to the film as the portion of the lithographic apparatus is cleaned. The part of the device moves. In one embodiment, the membrane is configured to be parallel to the target surface. In one embodiment, the detergent material on the film contacts the target portion for a specified dwell time. During the dwell time, the cleaner material remains in contact with the target portion as the tool handler disengages from the cleaning tool 302 . In one embodiment, the cleaning tool may be vacuum clamped to (or engaged with) the reticle handler turret clamp despite disengagement, such as when a vacuum clamp is used. Thus, the target portion is applied only by the weight of the cleaning tool and the reticle handler turret gripper allowing the cleaner material to spread over the contaminated target surface. In one embodiment, the cleaning tool 302 is configured to move relative to the target portion under a weak vacuum grip such that the cleaning material scrubs the target portion for a specified scrub time or cycle. The cleaning tool 302 may be configured to move relative to the target portion under a weak vacuum clamping force after the cleaning tool 302 disengages from the reticle handler turret clamps. Tool handler 306 is configured to engage cleaning tool 302 and to move and orient cleaning tool 302 so that the film faces the portion of the lithography apparatus being cleaned.

In some embodiments, the cleaning tool 302 is engaged with (eg, vacuum clamped to) the reticle handler turret clamp, and the reticle handler turret clamp The tensioner disengages from the tool handler during the scrubbing action. For example, the reticle handler turret clamp can be configured to engage (eg, vacuum clamp to) the reticle handler turret clamp after the cleaning tool 302 engages the reticle handler turret clamp Gripper) moves relative to the target part. Thus, the cleaning material scrubs the target portion under the normal force of the reticle handler turret gripper and cleaning tool 302 due to the motion of the reticle handler turret gripper. The reticle handler turret clamper can move back and forth with high acceleration and low range of motion. In some embodiments, the reticle handler turret gripper can perform the described scrubbing action without applying vacuum force and/or without post-scrub/pre-unload reticle readjustment. By keeping the reticle handler turret gripper engaged with the cleaning tool 302 during the described scrubbing action, the problems associated with unloading the cleaning tool 302 from the reticle handler turret gripper are mitigated. In some embodiments, the described scrubbing action may also allow scrubbing without applying additional vacuum force to the cleaning tool 302, resulting in less normal force between the cleaning tool 302 and the target portion.

In one embodiment, the lithography apparatus further includes a compartment (not illustrated) configured to hold and fit one or more cleaning tools within the lithography apparatus. Cleaning tool 302 is configured to be inserted into the bay, moved from the bay by tool handler 306 for cleaning, and returned to the bay by tool handler 306 after cleaning. In one embodiment, the compartment includes a plurality of slots, each slot configured to hold a cleaning implement of one or more cleaning implements. In one embodiment, the compartment comprises a non-resistant material that does not react with the cleaning agent material carried on the membrane as a body attached to the cleaning tool. In this embodiment, the non-resistant material is high density polyethylene. In one embodiment, the cleaning procedure may be implemented via a processor configured to operate the tool handler while operations stored in the processor are performed. In one embodiment, example operations are discussed below.

FIG. 9 is a flowchart of a method 900 for cleaning a portion of a lithography apparatus, according to one embodiment. For example, method 900 may be performed using cleaning tool 302 . The operations of method 900 presented below are intended to be illustrative. In an embodiment, method 900 may be implemented with one or more additional operations not described and/or without one or more operations discussed. Additionally, the order in which the operations of method 900 are illustrated in FIG. 9 and described below is not intended to be limiting.

In some embodiments, one or more portions of method 900 may be implemented on one or more processing devices (eg, digital processors, analog processors, digital circuits designed to process information, analog circuits designed to process information) circuits, state machines, and/or other mechanisms for processing information electronically) and/or controlled by the one or more processing devices. The one or more processing devices may include one or more devices that perform some or all of the operations of method 900 in response to instructions stored electronically on an electronic storage medium. The one or more processing devices may include one or more devices configured via hardware, firmware, and/or software specifically designed to perform one or more of the operations of method 900 or (see, for example, the discussion of FIG. 12 below). For example, one or more processing devices may execute software (eg, ASML Twinscan) configured to execute a cleaning program that causes one or more of the operations described herein to be performed.

In one embodiment, operation P901 includes inserting a cleaning tool (eg, tool 302 of FIG. 7 ) into the lithography apparatus through the tool handler. In one embodiment, the lithography apparatus is configured for deep ultraviolet (DUV) radiation. In one embodiment, operation P903 includes contacting, via the tool handler, the cleaner material on the one or more films with the portion of the lithography apparatus to be cleaned.

In one embodiment, operation P905 includes cleaning, via the tool handler, the portion of the lithographic apparatus with a cleaner material on one or more films of the cleaning tool, the cleaning comprising at a specified time relative to the portion of the lithographic apparatus Or move the cleaning tool within a loop.

In one embodiment, the cleaning of the portion of the lithographic apparatus comprises repeatedly moving the second cleaning tool in parallel and in a back and forth direction relative to the portion of the lithographic apparatus. In one embodiment, the back and forth movement is limited by the geometry of the part being cleaned or the closest distance to an adjacent component. For example, back and forth movement is limited to a range of ±2 mm.

In one embodiment, cleaning operation P905 further includes maintaining the one or more films in partial contact with the lithography apparatus for the specified dwell time. During the specified dwell time, the cleaning tool is stationary. In one embodiment, the cleaning tool is disengaged from the tool handler during the dwell time.

In one embodiment, the method 900 further comprises: selecting a cleaning tool from a bay based on the contamination being cleaned; using the tool handler to move the cleaning tool from the bay for use in cleaning the portion of the lithography apparatus; after cleaning removing one or more films from the cleaning tool; and returning the cleaning tool to the compartment after cleaning using the tool disposer. In one embodiment, the contamination on the portion of the lithography apparatus comprises: a first contamination or a second contamination deposited on the portion of the lithography apparatus. The first contaminant is, for example, chromium (Cr) particles deposited on parts of the lithography apparatus. Secondary contaminants are, for example, hard particles, residual chrome etchant, or organic materials deposited on portions of the lithography apparatus.

When cleaning a first contaminant, the cleaning procedure comprises: applying the first cleaning solution as a cleaner material to one or more membranes attached to the first cleaning tool; maintaining the first cleaning solution for a specified dwell time Parts of the lithography apparatus that are in contact with the first cleaning solution react with the first contaminant during the specified dwell time; remove the first cleaning tool and place the first cleaning tool in the compartment; apply the second cleaning solution Applying as a cleaner material to one or more films attached to the second cleaning tool; and moving the second cleaning tool relative to the portion of the lithographic device for a specified scrubbing time while the cleaner material contacts the lithographic device part of. Moving the second cleaning tool includes moving the second cleaning tool in parallel and in a back and forth direction relative to the portion of the lithography apparatus.

In one embodiment, the friction between the portion of the lithography apparatus and the cleaning material should be sufficiently low to enable movement in the back and forth direction. Thus, in one embodiment, an "extra weak" vacuum (eg, a lower vacuum than that used to clamp or clamp the reticle during patterning) may be provided. Thus, the normal force is reduced, thereby reducing the friction component at the contact between the cleaning material and the part being cleaned. The parallel back and forth scrubbing action between the cleaning material and the part being cleaned is achieved by reducing the vacuum. In some embodiments, the "extra weak" vacuum can be removed where cleaning is more sensitive or delicate diaphragms (eg, raised reticle stage chuck diaphragms) are used. For example, the scrubbing action (eg, in a back and forth direction) can be performed without an "extra weak" vacuum or at atmospheric pressure.

In some embodiments, method 900 includes (e.g., as described above with respect to FIGS. 6-8 ): providing a film (in one embodiment, a pull-on attachment) on a cleaning implement, the film being at least partially formed of a cleaning material. covering; providing one or more identification features on the cleaning tool; and providing a film that allows a camera to read the identification features through the film.

10 , 11A and 11B illustrate example two cleaning implements, a first set of cleaning strips and a second set of cleaning strips, according to an embodiment. FIG. 11A shows a first cleaning implement A comprising a first collection of cleaning strips A. FIG. The first cleaning strip A carries Cr etchant, for example to clean Cr contamination. According to method 900, the tool handler may communicate with a processor (eg, program 104 of FIG. 12 configured to execute the cleaning routine/software code/operation of FIG. 9). The processor may instruct the tool handler to insert cleaning tool A into the lithography apparatus over a target surface (eg, a vacuum pad). Cleaning strip A is placed in contact with the target surface via the tool handler. Additionally, the program may instruct the tool handler to disengage such that the cleaning strip A remains in contact with the target surface for the specified dwell time. For example, the preset dwell time can be set at 10 minutes, or the dwell time can be specified within the range of 7.5 to 12.5 minutes. Subsequently, the tool handler can be re-engaged to the bay, and cleaning tool A moved to the bay. In one embodiment, the cleaning strip A may be removed prior to moving the cleaning implement A to the compartment.

Additionally, the processor may instruct the tool handler to select cleaning tool B. Cleaning implement B comprises, for example, a cleaning strip B carrying deionized (DI) water (or isopropanol). The tool handler can then transfer the cleaning tool B over the target surface and move the cleaning tool B relative to the target surface to perform the scrubbing action of the target surface with the cleaning strip B for the specified scrubbing time. For example, the preset scrub time may be set at 20 cycles, and may be specified for any number of cycles ranging from 0 to 50 cycles. After scrubbing, the cleaning tool is realigned with eg a reticle holder with high or low accuracy via asymmetrical movement and adjustment to safely remove the cleaning tool. Thereafter, the cleaning tool can be unloaded from, for example, the reticle stage, and the tool handler can return the cleaning tool to the bay. In one embodiment, a cleaning strip B may be positioned. In one embodiment, a single reticle compartment can be used so that each cleaning tool can return to the original compartment time slot of the cleaning tool after a cleaning action (eg, after a dwell, after a scrub).

Cleaning implements A and B can be reused by attaching new cleaning strips A and B with the desired cleaner material (eg, cleaning solution) in the next cleaning procedure (eg, after 1 month).

In one embodiment, a computer-readable medium configured to store instructions of method 900 is provided. As discussed above, these stored instructions, when executed, cause the cleaning tool to perform the operations of method 900 . For example, the non-transitory computer readable medium, when executed, causes cleaning-related operations to communicate with one or more systems, such as tool handlers, systems related to reticle handling, or other systems of lithography equipment.

For example, in one embodiment, a non-transitory computer readable medium includes instructions for cleaning a portion of a lithography apparatus using a cleaning tool comprising one or more cleaning films, the instructions being processed by one or more The operation is caused when the tool is executed, the operations include: inserting a cleaning tool into the lithography device through the tool handler; contacting one or more cleaning films of the cleaning tool with the part of the lithography device to be cleaned through the tool handler; and cleaning the portion of the lithography apparatus with one or more cleaning films of the cleaning implement via the tool handler, the cleaning comprising moving the cleaning implement relative to the portion of the lithography apparatus for a specified scrubbing time or cycle.

In one embodiment, the cleaning of the portion of the lithographic apparatus includes iteratively moving the second cleaning tool in parallel and in a back and forth direction relative to the portion of the lithographic apparatus. In one embodiment, the back and forth movement is limited to a range of ±2 mm.

In one embodiment, the cleaning operation further includes maintaining the one or more films in contact with the portion of the lithographic apparatus for the specified dwell time. In one embodiment, the cleaning tool is stationary during the specified dwell time. In one embodiment, the cleaning tool is disengaged from the tool handler and vacuum clamped to the RH turret clamp during the specified dwell time.

In one embodiment, the operations further include selecting a cleaning tool from the container based on the contaminants being cleaned; using the tool handler to move the cleaning tool from the container for use in cleaning the portion of the lithography apparatus; self-cleaning the tool after cleaning One or more cleaning films are removed, and the cleaning tool is returned to the container using the tool disposer after cleaning. In one embodiment, the contamination on the portion of the lithography apparatus comprises: a first contamination or a second contamination deposited on the portion of the lithography apparatus. In one embodiment, the first contaminant is chromium (Cr) particles deposited on portions of the lithography apparatus. In one embodiment, the second contaminant is hard particles, residual chrome etchant, or organic material deposited on portions of the lithography apparatus.

In one embodiment, when cleaning a first contaminant, the cleaning procedure includes: applying an etchant to one or more cleaning films attached to the first cleaning tool; A cleaning film contacts the portion of the lithography apparatus, the etchant reacts with the first contaminant during the specified dwell time; the first cleaning tool is removed and placed in a container; the cleaning solution is applied to one or more cleaning films attached to the second cleaning tool; and moving the second cleaning tool relative to the portion of the lithographic apparatus for a specified scrubbing time while the one or more cleaning films contact the portion of the lithographic apparatus .

In one embodiment, the instructions for movement of the second cleaning tool include moving the second cleaning tool in parallel and in a back and forth direction relative to the portion of the lithography apparatus. In one embodiment, movement of the second cleaning tool includes reducing the clamping force applied to the cleaning tool by adjusting the vacuum to allow contact between the cleaning material of the film and the portion of the lithographic apparatus The movement of the second tool.

In one embodiment, the portion of the lithography apparatus includes a reticle holder of a reticle stage. In one embodiment, the cleaning tool includes a cleaning magnification mask. In one embodiment, a non-transitory computer readable medium facilitates communication with a tool handler including a reticle handler turret gripper. In one embodiment, the non-transitory computer readable medium is part of a lithography apparatus configured for deep ultraviolet (DUV) radiation and configured to clean the portion of the DUV lithography apparatus.

FIG. 12 is a block diagram illustrating a computer system 100 that may assist in implementing the methods, processes, or systems disclosed herein. Computer system 100 includes a bus 102 or other communication mechanism for communicating information, and a processor 104 (or multiple processors 104 and 105) coupled with bus 102 for processing information. Computer system 100 also includes main memory 106 , such as a random access memory (RAM) or other dynamic storage device, coupled to bus 102 for storing information and instructions to be executed by processor 104 . Main memory 106 may also be used to store temporary variables or other intermediate information during execution of instructions to be executed by processor 104 . Computer system 100 further includes a read only memory (ROM) 108 or other static storage device coupled to bus 102 for storing static information and instructions for processor 104 . A storage device 110, such as a magnetic or optical disk, is provided and coupled to bus 102 for storing information and instructions.

Computer system 100 can be coupled via bus 102 to a display 112 , such as a cathode ray tube (CRT) or flat panel or touch panel display, for displaying information to a computer user. An input device 114 including alphanumeric and other keys may be coupled to bus 102 for communicating information and command selections to processor 104 . Another type of user input device is a cursor control 116 , such as a mouse, trackball, or cursor arrow keys, for communicating direction information and command selections to processor 104 and for controlling cursor movement on display 112 . This input device typically has two degrees of freedom in two axes, a first axis (eg x) and a second axis (eg y), which allows the device to specify a position in a plane. Touch panel (screen) displays can also be used as input devices.

According to one embodiment, portions of one or more methods described herein may be performed by computer system 100 in response to processor 104 executing one or more sequences of one or more instructions contained in main memory 106 . Such instructions may be read into main memory 106 from another computer-readable medium, such as storage device 110 . Execution of the sequences of instructions contained in main memory 106 causes processor 104 to perform the program steps described herein. One or more processors in a multi-processing configuration may also be used to execute the sequences of instructions contained in main memory 106 . In an alternative embodiment, hard-wired circuitry may be used instead of or in combination with software instructions. Thus, the descriptions herein are not limited to any specific combination of hardware circuitry and software.

The term "computer-readable medium" as used herein refers to any medium that participates in providing instructions to processor 104 for execution. This medium can take many forms, including but not limited to, non-volatile media, volatile media, and transmission media. Non-volatile media include, for example, optical or magnetic disks, such as storage device 110 . Volatile media includes dynamic memory, such as main memory 106 . Transmission media include coaxial cables, copper wire, and fiber optics, including the wires that comprise busbar 102 . Transmission media can also take the form of acoustic or light waves, such as those generated during radio frequency (RF) and infrared (IR) data communications. Common forms of computer readable media include, for example, floppy disks, floppy disks, hard disks, magnetic tape, any other magnetic media, CD-ROMs, DVDs, any other optical media, punched cards, paper tape, Any other physical media, RAM, PROM and EPROM, FLASH-EPROM, any other memory chips or cartridges, carrier waves as described below, or any other computer-readable media.

Various forms of computer-readable media may be involved in carrying one or more sequences of one or more instructions to processor 104 for execution. For example, the instructions may initially be carried on a disk in the remote computer. The remote computer can load the commands into its dynamic memory and send the commands over a telephone line using a modem. The modem at the local end of the computer system 100 can receive the data on the telephone line, and use the infrared transmitter to convert the data into infrared signals. An infrared detector coupled to the bus 102 can receive the data carried in the infrared signal and place the data on the bus 102 . Bus 102 carries the data to main memory 106, from which processor 104 retrieves and executes the instructions. The instructions received by main memory 106 can optionally be stored on storage device 110 either before or after execution by processor 104 .

The computer system 100 can also include a communication interface 118 coupled to the bus 102 . Communication interface 118 provides a bi-directional data communication coupling to network link 120 , which is connected to local area network 122 . For example, communication interface 118 may be an Integrated Services Digital Network (ISDN) card or a modem to provide a data communication connection to a corresponding type of telephone line. As another example, communication interface 118 may be an area network (LAN) card to provide a data communication connection to a compatible LAN. Wireless links may also be implemented. In any such implementation, communication interface 118 sends and receives electrical, electromagnetic or optical signals that carry digital data streams representing various types of information.

Network link 120 typically provides data communication to other data devices via one or more networks. For example, network link 120 may provide a connection via local area network 122 to host computer 124 or to data equipment operated by an Internet Service Provider (ISP) 126 . The ISP 126 in turn provides data communication services via a global packet data communication network (now commonly referred to as the "Internet" 128). Local area network 122 and Internet 128 both use electrical, electromagnetic or optical signals that carry digital data streams. The signals through the various networks and the signals on network link 120 and through communication interface 118 are exemplary forms of carrier waves conveying information, the signals carrying digital data to and from computer system 100 .

Computer system 100 can send messages and receive data, including program code, via one or more networks, network link 120 and communication interface 118 . In the Internet example, server 130 may transmit the requested code for the application via Internet 128 , ISP 126 , local area network 122 and communication interface 118 . For example, one such downloaded application can provide all or part of the methods described herein. The received code may be executed by processor 104 as it is received and/or stored in storage device 110 or other non-volatile storage for later execution. In this way, the computer system 100 can obtain the application code in the form of a carrier wave.

FIG. 13 schematically depicts an exemplary lithographic projection apparatus 1000 similar and/or identical to that shown in FIG. 1 , FIG. 3A and/or FIG. 3B that may be used in conjunction with the techniques described herein. Apparatus 1000 may generally represent, for example, a DUV apparatus with a dual scan setup (this example is not intended to be limiting). Equipment contains: - An illumination system IL for conditioning the radiation beam B. In this particular case, the lighting system also includes the radiation source SO; - a first object stage (e.g., patterning device stage) MT having a patterning device holder for holding a patterning device MA (e.g., a reticle) and connected to an accurate alignment with respect to item PS accurately position the first positioner of the patterning device; - A second object table (substrate table) WT equipped with a substrate holder for holding a substrate W (eg, a resist-coated silicon wafer) and connected to accurately position the substrate relative to the item PS the second locator; - a projection system ("lens") PS (eg, a refractive, reflective, or catadioptric optical system) for imaging an irradiated portion of the patterning device MA onto a target portion C of the substrate W (eg, comprising one or more grains).

As depicted herein, the device is of the transmissive type (ie, has a transmissive patterning device). In general, however, it can also be of the reflective type, for example (with reflective patterning means). The apparatus may use different kinds of patterning devices for typical masks; examples include programmable mirror arrays or LCD matrices.

A source SO (eg mercury lamp or excimer laser, LPP (Laser Produced Plasma) EUV source) produces a beam of radiation. For example, this light beam is fed into the illumination system (illuminator) IL directly or after having traversed an adjustment member such as a beam expander Ex. The illuminator IL may comprise adjustment means for setting the outer radial extent and/or the inner radial extent (commonly referred to as σouter and σinner, respectively) of the intensity distribution in the light beam. In addition, the illuminator IL will typically include various other components, such as light integrators and light collectors. In this way, the light beam B incident on the patterning device MA has the desired uniformity and intensity distribution in its cross-section.

It should be noted with respect to FIG. 13 that the source SO can be inside the housing of the lithographic projection device (as is often the case when the source SO is, for example, a mercury lamp), but it can also be remote from the lithographic projection device, where the resulting The radiation beam is directed into the device (eg by means of suitable guiding mirrors); this latter scenario is often the case when the source SO is an excimer laser (eg based on KrF, ArF or _F2 laser action).

The beam then intercepts the patterning device MA held on the patterning device table MT. Having traversed the patterning device MA, the beam B passes through the lens PL, which focuses the beam B onto the target portion C of the substrate W. FIG. By means of the second positioning means (and interferometric measuring means), the substrate table WT can be moved accurately, for example in order to position different target portions C in the path of the beam. Similarly, the first positioning means may be used to accurately position the patterning device MA relative to the path of the beam B, eg, after mechanical retrieval of the patterning device MA from the patterning device library or during scanning. In general, the movement of the object tables MT, WT will be achieved by means of long stroke modules (coarse positioning) and short stroke modules (fine positioning) not explicitly depicted. However, in the case of a stepper (as opposed to a step-and-scan tool), the patterning device stage MT may only be connected to a short-stroke actuator, or may be fixed.

The depicted tool can be used in two different modes: - In step mode, the patterner table MT is held substantially stationary, and the entire patterner image is projected (i.e., a single "flash") onto the target portion C in one operation. The substrate is then The table WT is displaced in the x and/or y direction so that different target portions C can be irradiated by the beam; - In scanning mode, essentially the same applies except that a given target portion C is not exposed in a single "flash". Instead, the patterning device table MT can be moved with a velocity v in a given direction (the so-called "scanning direction", e.g., the y-direction), such that the projection beam B is scanned over the patterning device image; at the same time, the substrate table WT Simultaneously move in the same or opposite directions at a velocity V = Mv, where M is the magnification of the lens PL (typically, M = 1/4 or 1/5). In this way, a relatively large target portion C can be exposed without necessarily compromising resolution.

While the concepts disclosed herein can be used for wafer fabrication on substrates such as silicon wafers, it should be understood that the disclosed concepts can be used with any type of fabrication system, e.g., for use on substrates other than silicon wafers The manufacturing system of manufacturing. Furthermore, combinations and subcombinations of the disclosed elements may comprise single embodiments. For example, expanding and contracting cleaning tools (FIGS. 3A-10) and cleaning of interior lighting (eg, FIGS. 11-13) may also comprise separate embodiments, and/or these features may be used together in the same embodiment middle.

Embodiments may be further described using the following clauses: 1. A cleaning tool for cleaning a portion of a lithography apparatus, the cleaning tool comprising: a body configured to be inserted into the lithography apparatus; and a cleaning A film, a first side of the cleaning film is configured to be attached to a surface of the cleaning tool, and a second side of the cleaning film is at least partially covered by a cleaning material, the second side and the first side In contrast, wherein the cleaning film is configured to prevent the cleaning material from contacting the surface of the cleaning tool, and the cleaning material is configured to clean the portion of the lithography apparatus upon contact. 2. The cleaning implement of clause 1, wherein the cleaning film is removably attached to the surface of the cleaning implement. 3. The cleaning implement of any one of clauses 1 to 2, wherein the cleaning film comprises: a first layer at least partially covered with the cleaning material, and a second layer configured to be attached to the surface of the cleaning material and prevent the cleaning material from contacting the surface of the cleaning tool. 4. The cleaning implement of clause 3, wherein the second layer is transparent to allow one or more features on the cleaning implement to be read through an implement handler. 5. The cleaning implement of any one of clauses 1 to 4, wherein the cleaning film includes one or more cutout portions associated with at least one or more of the following features: for attachment to the cleaning implement engaging a tool handler; one or more gripper elements at the portion of the lithography apparatus; or one or more identification features on the surface of the cleaning tool. 6. The cleaning implement of clause 5, wherein the one or more cutout portions are located within the first layer and not on the second layer. 7. The cleaning implement according to any one of clauses 5 to 6, wherein the one or more identification features comprise one of a bar code and an alignment mark readable through the second layer via an optical sensor or both. 8. The cleaning tool according to any one of clauses 5 to 7, wherein the one or more gripper elements comprise one or more gripper elements provided on the portion of the lithography apparatus to grip a double reduction mask via a vacuum gripper. Multiple vacuum holes. 9. The cleaning implement of clauses 5 to 8, wherein the cleaning implement comprises: a first cleaning film attached over the one or more identification features at a first edge of the surface of the cleaning implement, The one or more identification features are readable through the second layer of the first cleaning film; and a second cleaning film attached to a second edge of the surface of the cleaning implement, the second An edge is distal to and parallel to the first edge. 10. The cleaning tool according to any one of clauses 1 to 9, wherein the cleaning film further comprises an adhesive layer disposed between the first layer and the second layer, wherein even when the cleaning film is removed from the cleaning tool The adhesive layer also keeps the second layer adhered to the third layer when removed. 11. The cleaning tool of any of clauses 1 to 10, wherein the cleaning tool is configured to contact the cleaning film with a target surface of the portion of the lithography device, and upon cleaning the lithography device by the cleaning film The portion moves relative to the portion of the lithography apparatus. 12. The cleaning tool of clause 11, wherein the cleaning film is configured to be parallel to the target surface. 13. The cleaning implement of any one of clauses 11 to 12, wherein the one or more cleaning films contact the target portion for a specified dwell time. 14. The cleaning implement of any one of clauses 11 to 13, wherein the one or more cleaning films move relative to the target portion within a specified scrubbing time or cycle. 15. The cleaning tool of any one of clauses 11 to 14, wherein the target surface comprises one or more membrane surfaces of the lithography device. 16. The cleaning tool of any one of clauses 1 to 15, wherein the cleaning tool is configured to be engaged by a tool handler of the lithography apparatus configured to engage the cleaning tool, And moving and orienting the cleaning tool so that the cleaning film faces the portion of the lithographic apparatus being cleaned. 17. The cleaning implement of any one of clauses 1 to 16, further comprising: a container configured to hold the cleaning implement and fit into the lithography apparatus, wherein the cleaning implement is configured to Inserted into the lithography apparatus in the container, moved from the container by the tool handler for the cleaning, and returned by the tool handler to the container after the cleaning. 18. The cleaning implement of clause 17, wherein the container comprises a plurality of slots, each slot configured to hold one of the one or more cleaning implements. 19. The cleaning tool of any one of clauses 17 to 18, wherein the container comprises a non-resistant material that does not react with the cleaning material attached to the one or more cleaning films of the cleaning tool . 20. The cleaning implement of clause 19, wherein the non-resistant material is a high density polyethylene. 21. The cleaning tool of any one of clauses 1 to 20, wherein the part of the lithography apparatus comprises a part of a reticle holder of a reticle stage. 22. The cleaning tool of clause 21, wherein the portion of the reticle holder is in contact with and supports a reticle during a patterning process. 23. The cleaning tool of clauses 21 to 22, wherein the portion of the reticle holder is at least one vacuum pad attached to the reticle holder. 24. The cleaning implement of any one of clauses 1 to 23, wherein the cleaning implement comprises a cleaning magnification mask. 25. The cleaning tool of any one of clauses 5 to 25, wherein the tool handler comprises a double reticle handler turret holder. 26. The cleaning tool of any one of clauses 1 to 25, wherein the lithography apparatus is configured for deep ultraviolet (DUV) radiation. 27. The cleaning tool according to any one of clauses 1 to 26, wherein the cleaning material of the one or more cleaning films is at least one of the following: chrome etchant, isopropanol solution, deionized water or methanol . 28. A cleaning tool for cleaning a portion of a lithography apparatus, the cleaning tool comprising: a body configured to be inserted into the lithography apparatus; and a cleaning membrane, a first side of the cleaning membrane configured to be attached to a surface of the cleaning implement, and a second side of the cleaning film opposite the first side is at least partially covered by a cleaning material, wherein the cleaning film includes a transparent portion , one or more features on the surface of the cleaning implement can be read through the transparent portion, and the cleaning material is configured to clean the portion of the lithography apparatus upon contact. 29. The cleaning implement of clause 28, wherein the cleaning film is removably attached to the surface of the cleaning implement. 30. The cleaning implement of any one of clauses 28 to 29, wherein the cleaning film comprises: a first layer at least partially covered with the cleaning material, and a second layer configured to be attached to The surface of the cleaning material prevents the cleaning material from contacting the surface of the cleaning tool and is transparent to allow one or more features on the cleaning to be read by an tool handler. 31. The cleaning implement of any one of clauses 28 to 30, wherein the cleaning film includes one or more cutout portions associated with one or more of at least one of the following features: for attachment to the cleaning implement engaging a tool handler; one or more gripper elements at the portion of the lithography apparatus; or one or more identification features on the surface of the cleaning tool. 32. The cleaning implement of clause 31, wherein the one or more cutout portions are located within the first layer and not on the second layer. 33. The cleaning implement of any one of clauses 31 to 32, wherein the one or more identification features comprise one or both of a bar code and an alignment mark readable through the second layer. 34. The cleaning tool according to any one of clauses 31 to 33, wherein the one or more gripper elements comprise one or more gripper elements provided on the portion of the lithography apparatus to grip a reticle via a vacuum gripper. Multiple vacuum holes. 35. The cleaning implement of clauses 31 to 34, wherein the cleaning implement comprises: a first cleaning film attached over the one or more identification features at a first edge of the surface of the cleaning implement, The one or more identification features are readable through the second layer of the first cleaning film; and a second cleaning film attached to a second edge of the surface of the cleaning implement, the second An edge is distal to and parallel to the first edge. 36. The cleaning implement according to any one of clauses 28 to 35, wherein the cleaning film further comprises an adhesive layer disposed between the first layer and the second layer, wherein even when the cleaning film is removed from the cleaning implement The adhesive layer also keeps the second layer adhered to the third layer when removed. 37. A method for cleaning a portion of a lithography apparatus using a cleaning tool comprising one or more cleaning films, the method comprising: inserting the cleaning tool into the lithography apparatus via a tool handler; via the a tool handler contacts the one or more cleaning films of the cleaning tool with the portion of the lithographic apparatus to be cleaned; and cleans the lithography with the one or more cleaning films of the cleaning tool via the tool handler The portion of the apparatus, the cleaning includes moving the cleaning tool relative to the portion of the lithography apparatus for a specified scrubbing time or cycle. 38. The method of clause 37, wherein cleaning the portion of the lithographic apparatus comprises repeatedly moving the second cleaning tool in parallel and in a back and forth direction relative to the portion of the lithographic apparatus. 39. The method of clause 38, wherein the back and forth movement is limited to a range of ±2mm. 40. The method of any one of clauses 37 to 39, wherein the cleaning further comprises: maintaining the one or more cleaning films in contact with the portion of the lithography apparatus for a specified dwell time. 41. The method of clause 40, wherein during the specified dwell time, the cleaning tool is stationary. 42. The method of clause 41, wherein during the specified dwell time, the cleaning tool is disengaged from the tool handler and vacuum clamped. 43. The method of any one of clauses 37 to 42, further comprising: selecting the cleaning tool from a container based on a contaminant being cleaned, using the tool handler to move the cleaning tool from the container, For cleaning the portion of the lithography apparatus, removing the one or more cleaning films from the cleaning tool after cleaning, and returning the cleaning tool to the container after cleaning using the tool handler. 44. The method of clause 43, wherein the contamination on the portion of the lithography apparatus comprises: a first contamination or a second contamination deposited on the portion of the lithography apparatus. 45. The method of clause 44, wherein the first contaminant is chromium (Cr) particles deposited on the portion of the lithography apparatus. 46. The method of clause 44, wherein the second contaminant is hard particles, a residual chromium etchant, or organic material deposited on the portion of the lithography apparatus. 47. The method of clauses 44 to 46, wherein when cleaning the first contaminant, the cleaning procedure comprises: applying an etchant to the one or more cleaning films attached to a first cleaning tool; maintaining the one or more cleaning films in contact with the portion of the lithography apparatus for a specified dwell time during which the etchant reacts with the first contaminant; removing the first cleaning implements and placing the first cleaning implement in the container; applying a cleaning solution to the one or more cleaning films attached to a second cleaning implement; and relatively The second cleaning tool is moved over the portion of the lithography apparatus while the one or more cleaning films contact the portion of the lithography apparatus. 48. The method of clause 47, wherein the moving of the second cleaning tool comprises moving the second cleaning tool parallel and in a back and forth direction relative to the portion of the lithography apparatus. 49. The method of clause 48, wherein the moving of the second cleaning tool comprises: reducing a clamping force applied to the cleaning tool by adjusting a vacuum to hold the film of the cleaning material Movement of the second tool is permitted upon contact with the portion of the lithography apparatus. 50. The method of any one of clauses 37 to 49, wherein the portion of the lithography apparatus comprises a reticle holder of a reticle stage. 51. The method of any one of clauses 37 to 50, wherein the cleaning means comprises a cleaning magnification mask. 52. The method of any one of clauses 37 to 51, wherein the tool handler comprises a reticle handler turret gripper. 53. The method of any one of clauses 37 to 52, wherein the lithography apparatus is configured for deep ultraviolet (DUV) radiation. 54. A non-transitory computer readable medium comprising instructions for cleaning a portion of a lithography apparatus with a cleaning tool comprising one or more cleaning films, the instructions when executed by one or more processors Inducing operations comprising: inserting the cleaning tool into the lithography apparatus via a tool handler; connecting the one or more cleaning films of the cleaning tool to the lithography apparatus to be cleaned via the tool handler and cleaning the portion of the lithographic apparatus with the one or more cleaning films of the cleaning tool via the tool handler, the cleaning comprising relative to the lithographic apparatus within a specified scrubbing time or cycle This part of the equipment moves the cleaning tool. 55. The non-transitory computer-readable medium of clause 54, wherein cleaning the portion of the lithographic apparatus comprises repeatedly moving the second cleaning tool in parallel and in a back and forth direction relative to the portion of the lithographic apparatus. 56. The non-transitory computer readable medium of clause 55, wherein the traversing movement is limited to a range of ±2mm. 57. The non-transitory computer readable medium of clauses 54-56, wherein the cleaning further comprises: maintaining the one or more cleaning films in contact with the portion of the lithography apparatus for a specified dwell time. 58. The non-transitory computer readable medium of clause 57, wherein during the specified dwell time, the cleaning tool is stationary. 59. The non-transitory computer-readable medium of clause 58, wherein during the specified dwell time, the cleaning tool disengages from the tool handler and is vacuum gripped. 60. The non-transitory computer readable medium of any one of clauses 54 to 59, further comprising: selecting the cleaning tool from a container based on a contaminant being cleaned, using the tool handler to move the cleaning tool from the container of the cleaning tool for use in cleaning the portion of the lithography apparatus, removing the one or more cleaning films from the cleaning tool after cleaning, and returning the cleaning tool using the tool handler after cleaning to the container. 61. The non-transitory computer readable medium of clause 60, wherein the contamination on the portion of the lithography apparatus comprises: a first contamination or a second contamination deposited on the portion of the lithography apparatus pollutants. 62. The non-transitory computer readable medium of clause 61, wherein the first contaminant is chromium (Cr) particles deposited on the portion of the lithography apparatus. 63. The non-transitory computer readable medium of clause 61, wherein the second contaminant is hard particles, a residual chromium etchant, or organic material deposited on the portion of the lithography apparatus. 64. The non-transitory computer readable medium of clauses 61 to 63, wherein when cleaning the first contaminant, the cleaning procedure comprises: applying an etchant to the one attached to a first cleaning tool or more cleaning films; maintaining the one or more cleaning films in contact with the portion of the lithography apparatus for a specified dwell time during which the etchant reacts with the first contaminant ; removing the first cleaning implement and placing the first cleaning implement in the container; applying a cleaning solution to the one or more cleaning films attached to a second cleaning implement; and The second cleaning tool is moved relative to the portion of the lithography apparatus for a specified scrubbing time while the one or more cleaning films contact the portion of the lithography apparatus. 65. The non-transitory computer-readable medium of clause 64, wherein the moving of the second cleaning tool comprises moving the second cleaning tool in parallel and in a back and forth direction relative to the portion of the lithography apparatus. 66. The non-transitory computer readable medium of clause 65, wherein the moving of the second cleaning tool comprises: reducing a clamping force on the cleaning tool by adjusting a vacuum to maintain Movement of the second tool is permitted upon contact between the cleaning material of the film and the portion of the lithography apparatus. 67. The non-transitory computer readable medium of any one of clauses 54 to 66, wherein the portion of the lithography apparatus comprises a reticle holder for a reticle stage. 68. The non-transitory computer readable medium of any one of clauses 54 to 67, wherein the cleaning tool comprises a cleaning reticle. 69. The non-transitory computer readable medium of any one of clauses 54 to 68, wherein the tool handler comprises a reticle handler turret clamp. 70. The non-transitory computer readable medium of any one of clauses 54 to 69, wherein the lithography apparatus is configured for deep ultraviolet (DUV) radiation.

The above description is intended to be illustrative, not limiting. Accordingly, it will be apparent to those skilled in the art that modifications may be made as described without departing from the scope of the claims set forth below.

100: Computer system 102: busbar 104: Processor 105: Processor 106: main memory 108: Read-only memory (ROM) 110: storage device 112: Display 114: input device 116: Cursor control 118: Communication interface 120: Network link 122: Local area network 124: host computer 126: Internet service provider (ISP) 128:Internet 130: server 300: Lithography equipment 301: system 302: cleaning tools 302': Ontology 306:Tool Handler/Mask Handler Turntable Clamp 307: Tool Handler/Mask Handler Robot Gripper 308: Tool Handler/Associated Fixture 310:Double photomask stage 312:Double Reticle Fixture 316: double shrink mask 318: typical insertion point 320: Compartment 322: Mechanical components 410: Associated Diaphragm 415: vacuum pad 420: vacuum hole 900: method P901: Operation P903: Operation P905: Operation 1000: Lithography projection equipment 1100: Clean the surface 1102: identify the surface 1104: side surface 1106: Identifying features/pre-alignment marks 1108: Identification feature/barcode A: First cleaning tool/cleaning strip AD: adjuster AS: Alignment Sensor B: radiation beam BC1: incision BD: Beam Delivery System BK: Baking board C: target part CH: cooling plate CRK1: break CRK2: Crack CRK3: break CO: concentrator F1: Membrane F2: Membrane IF: position sensor IH: Fluid Handling Structure IL: lighting system IN: light integrator I/O1: input/output port I/O2: input/output port LA: Lithography equipment LACU: Lithography Control Unit LB: loading box LC: Lithography Manufacturing Cell LS: level sensor L1: first floor L2: Adhesive layer L3: second floor MA: patterning device MT: mask support M1: Mask Alignment Mark M2: Mask Alignment Mark PAC1: Notch PAC2: Notch PM: First Locator PS: projection system PW: second locator P1: Substrate alignment mark P2: Substrate alignment mark RC1: Notch RF: frame of reference RO: substrate handler or robot R1: double shrink mask SC: spin coater SCS: Supervisory Control System SO: radiation source TCU: coating development system control unit VC1: cutout VC2: cutout W: Substrate WT: substrate support WTa: Substrate table WTb: substrate table

The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate one or more embodiments and together with the description explain such embodiments. Embodiments of the present invention will now be described, by way of example only, with reference to the accompanying schematic drawings, in which corresponding reference characters indicate corresponding parts, and in which:

Figure 1 schematically depicts a lithography apparatus according to an embodiment.

Figure 2 schematically depicts an embodiment of a lithographic fabrication unit or cluster according to an embodiment.

3A illustrates a lithography apparatus including a cleaning tool, a reticle handler turret clamp, a reticle stage reticle clamp, and/or other components, according to one embodiment.

Figure 3B is an enlarged view of a portion of the lithography apparatus shown in Figure 3A, according to one embodiment.

4 illustrates a top view of a reticle stage, reticle holder, and/or associated membranes, according to one embodiment.

5A and 5B illustrate different types of contamination (eg, chromium particles from a reticle, hard particles such as molybdenum suicide (MoSi ₂ ) on a diaphragm of a reticle holder, according to an embodiment.

FIG. 5C illustrates a fractured membrane that is broken due to contamination deposited on an uncleaned membrane, according to one embodiment.

6 illustrates an example of the body of a cleaning tool (eg, a reticle) according to an embodiment.

7 illustrates an example of a cleaning tool (eg, a reticle) having a film attached to the body of the cleaning tool to be used to clean a portion of a lithography apparatus (eg, a diaphragm) according to an embodiment.

Figure 8 illustrates an example structure of a film according to an embodiment.

9 is a flowchart of a method for cleaning a portion of a lithography apparatus according to one embodiment.

10 illustrates example bodies of two cleaning implements, a first set of cleaning strips and a second set of cleaning strips, according to an embodiment.

11A illustrates a first cleaning tool attached to a first set of cleaning strips carrying a first cleaning material for a specified dwell time, according to one embodiment.

11B illustrates a second cleaning tool attached to a second set of cleaning strips carrying a second cleaning material for a designated scrubbing time, according to one embodiment.

Figure 12 is a block diagram of an example computer system according to one embodiment.

FIG. 13 is a schematic diagram of a lithography projection apparatus similar to FIG. 1 according to one embodiment.

302: cleaning tools

302': Ontology

BC1: incision

F1: Membrane

F2: Membrane

PAC1: Notch

PAC2: Notch

RC1: Notch

VC1: cutout

VC2: cutout

Claims (18)

A cleaning tool for cleaning a portion of a lithography device, the cleaning tool comprising: a body configured to be inserted into the lithography apparatus; and A cleaning film (cleaning film), a first side of the cleaning film is configured to be attached to a surface of the body, and a second side of the cleaning film is at least partially covered by a cleaning material, the second side Opposite the first side, wherein the cleaning film is configured to prevent the cleaning material from contacting the surface of the body, and the cleaning material is configured to clean the portion of the lithography apparatus upon contact, wherein the cleaning film is removably attached to the surface of the body, and wherein the cleaning tool is configured to contact the cleaning film with a target surface of the portion of the lithography apparatus, and the cleaning film is configured so that when the portion of the lithography apparatus is cleaned by the cleaning film, Movement between the cleaning film and the portion of the lithography apparatus is enabled. As the cleaning tool of claim 1, wherein the cleaning film comprises: a first layer at least partially covered with the cleaning material, and A second layer configured to attach to the surface of the body and prevent the cleaning material from contacting the surface of the body. The cleaning tool of claim 2, wherein the second layer is transparent to allow reading of one or more features on the cleaning tool via a tool handler. The cleaning tool of claim 2, wherein the cleaning film includes one or more cutout portions associated with one or more of at least one of the following features: a tool handler for engaging with the cleaning tool; one or more clamp elements located at the portion of the lithography apparatus; or One or more identification features on the surface of the body. The cleaning tool according to claim 4, wherein the one or more cutouts are located in the first layer and not on the second layer. The cleaning tool according to claim 4, wherein the one or more identification features include one or both of a bar code and an alignment mark readable by an optical sensor through the second layer. The cleaning tool of claim 4, wherein the one or more clamping elements comprise one or more vacuum holes provided on the portion of the lithography apparatus to clamp a reticle via a vacuum clamp. As the cleaning tool of claim 4, wherein the cleaning tool includes: a first cleaning film attached at a first edge of the surface of the body over the one or more identification features through the second layer of the first cleaning film readable; and A second cleaning film is attached to a second edge of the surface of the body, the second edge is located at the distal end of the first edge and is parallel thereto. The cleaning tool as claimed in claim 2, wherein the cleaning film further comprises an adhesive layer disposed between the first layer and the second layer, wherein even when the cleaning film is removed from the body, the adhesive layer makes The second layer remains adhered to the first layer. The cleaning tool according to claim 1, wherein the cleaning film is configured to be parallel to the target surface. The cleaning tool of claim 1, wherein the cleaning film contacts the target surface for a specified dwell time. The cleaning tool of claim 1, wherein the cleaning film is configured to enable movement between the cleaning film and the portion of the lithography apparatus within a specified scrubbing time or cycle. The cleaning tool according to claim 1, wherein the target surface comprises one or more membrane surfaces of the lithography device. The cleaning tool of claim 1, wherein the cleaning tool is configured to be engaged by a tool handler of the lithography apparatus configured to engage the cleaning tool and move and orient the cleaning tool, The cleaning film is made to face the portion of the lithography apparatus to be cleaned. As the cleaning tool of claim 1, it further comprises: A container configured to hold the cleaning tool and fit into the lithography apparatus, wherein the cleaning tool is configured to be inserted into the lithography apparatus in the container, from the container by the tool handler Moved for the cleaning and returned to the container by the tool handler after the cleaning. The cleaning tool of claim 15, wherein the container includes a plurality of slots, each slot configured to hold one of the one or more cleaning tools. A method for cleaning a portion of a lithography apparatus using a cleaning tool comprising one or more cleaning films removably attached to a surface of the cleaning tool, the method comprising: inserting the cleaning tool into the lithography apparatus via a tool handler; contacting the one or more cleaning films of the cleaning tool with the portion of the lithography apparatus to be cleaned via the tool handler; and Cleaning the portion of the lithography apparatus with the one or more cleaning films of the cleaning implement, the cleaning comprising movement between the cleaning implement and the portion of the lithography apparatus within a specified scrubbing time or cycle. A non-transitory computer readable medium comprising instructions for cleaning a portion of a lithography apparatus using a cleaning tool comprising one or more cleaning films removably attached to the Cleaning a surface of an implement, the instructions causing operations when executed by one or more processors, the operations comprising: inserting the cleaning tool into the lithography apparatus via a tool handler; contacting the one or more cleaning films of the cleaning tool with the portion of the lithography apparatus to be cleaned via the tool handler; and Cleaning the portion of the lithography apparatus with the one or more cleaning films of the cleaning implement, the cleaning comprising movement between the cleaning implement and the portion of the lithography apparatus within a specified scrubbing time or cycle.