TW202330095A - Apparatus and processes of instantiating the same - Google Patents

Apparatus and processes of instantiating the same Download PDF

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TW202330095A
TW202330095A TW111133879A TW111133879A TW202330095A TW 202330095 A TW202330095 A TW 202330095A TW 111133879 A TW111133879 A TW 111133879A TW 111133879 A TW111133879 A TW 111133879A TW 202330095 A TW202330095 A TW 202330095A
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克里斯多夫 J 納格爾
史蒂芬 P 樂蒙
馬克 G 詹森
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美商阿爾法投資組合有限責任公司
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/08Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • B01J19/12Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electromagnetic waves
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/08Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
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    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B3/00Hydrogen; Gaseous mixtures containing hydrogen; Separation of hydrogen from mixtures containing it; Purification of hydrogen
    • C01B3/50Separation of hydrogen or hydrogen containing gases from gaseous mixtures, e.g. purification
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
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    • B01J2219/00Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/08Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
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    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B2203/00Integrated processes for the production of hydrogen or synthesis gas
    • C01B2203/04Integrated processes for the production of hydrogen or synthesis gas containing a purification step for the hydrogen or the synthesis gas
    • C01B2203/0405Purification by membrane separation
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/30Hydrogen technology
    • Y02E60/36Hydrogen production from non-carbon containing sources, e.g. by water electrolysis

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Abstract

The invention includes apparatus and methods for instantiating materials, such as gases and hydrogen, in a nanoporous carbon powder.

Description

設備及例示該設備的製程Equipment and the manufacturing process that exemplifies the equipment

[相關申請案之交叉參考][CROSS-REFERENCE TO RELATED APPLICATIONS]

本發明主張於2021年9月8日根據35 USC 119(e)提交美國專利申請號63/241,697的優先權;並且是 Christopher J. Nagel 於2021年9月14日提交的美國專利申請號17/474,444的部分延續案。上述申請的全部教示通過引用併入本文。This application claims priority to U.S. Patent Application No. 63/241,697 filed September 8, 2021 under 35 USC 119(e); and to Christopher J. Nagel's U.S. Patent Application No. 17/ Continuation in Part of 474,444. The entire teachings of the aforementioned applications are incorporated herein by reference.

本發明係關於用於在奈米多孔碳粉末中諸如氣體和氫氣的例示材料的設備和製程。The present invention relates to equipment and processes for exemplary materials such as gases and hydrogen in nanoporous carbon powders.

已有描述生產氫氣的方法,包括按需製氫系統。例如,已經使用了包括質子交換膜、佈置在膜的一個表面上的陰極、和位於膜的第二表面上的陽極的電解槽。這種陽極可以包括具有分散顆粒的離聚物粘合劑,該顆粒具有芯和催化層,例如銥或鉑。 然而,這樣的系統可以以高壓和/或水飽和氣體為特徵。 因此,改進此類方法以產生乾燥或基本乾燥的氫氣是有益的。Methods of producing hydrogen have been described, including hydrogen-on-demand systems. For example, electrolytic cells comprising a proton exchange membrane, a cathode disposed on one surface of the membrane, and an anode on a second surface of the membrane have been used. Such anodes may include an ionomer binder with dispersed particles having a core and a catalytic layer, such as iridium or platinum. However, such systems can be characterized by high pressure and/or water saturated gas. Therefore, it would be beneficial to modify such processes to produce dry or substantially dry hydrogen.

本發明涉及發現含有碳基質的裝置可用於生產各種材料,例如氣體、氫氣和、有機小分子。本發明的方法包括將電磁輻射直接和/或間接應用於氣體、奈米多孔碳、或它們的組合物和組合,從而預處理氣體,並在本發明的設備中將碳基質暴露於預處理的氣體中和回收其中產生的產品。The present invention relates to the discovery that devices containing carbon substrates can be used to produce various materials such as gases, hydrogen and small organic molecules. The method of the present invention includes applying electromagnetic radiation directly and/or indirectly to the gas, nanoporous carbon, or combinations and combinations thereof, thereby pretreating the gas, and exposing the carbon substrate to the pretreated Gas neutralization recovers the products produced therein.

本發明涉及用於例示材料的設備和使用該設備的方法。The present invention relates to devices for instantiating materials and methods of using the same.

本發明包括包括以下步驟的方法:使包含奈米多孔碳的床與活化氣體接觸,同時向奈米多孔碳施加電磁輻射足以引起氣體例示的時間並收集氣體。本發明進一步涉及由該方法產生的氣體。The present invention includes methods comprising the steps of contacting a bed comprising nanoporous carbon with an activating gas while applying electromagnetic radiation to the nanoporous carbon for a time sufficient to cause gas instantiation and collecting the gas. The invention further relates to the gas produced by the method.

更具體地,本發明包括在奈米多孔碳粉末內例示材料例如氣體組合物(例如氫氣)的方法,包括以下步驟: (i) 如下所述,將奈米多孔碳粉末添加到反應器組件 (reactor assembly, RA)中, (ii) 將第一氣體組合物添加到反應器組件中; (iii) 將一個或多個 RA 線圈供電至第一電磁能階; (iv)使奈米多孔碳粉末(術語奈米多孔碳粉、奈米多孔碳材料和奈米多孔碳在本文中可互換使用)經受諧波圖案化以例示第二氣體組合物(例如氫氣),從而產生產物氣體組合物; (v)收集產物氣體組合物並任選地分離第二氣體組合物或其組分(例如氫氣)。 在一個實施例中,RA 線圈圍繞奈米多孔碳床以在奈米多孔碳粉末的超微孔中建立諧波電磁共振。第一氣體組合物可以是例如空氣、氧氣、氫氣、氦氣、氮氣、氖氣、氬氣、氪氣、氙氣、一氧化碳、二氧化碳或其混合物,較佳地為氮氣或空氣。較佳地,奈米多孔碳粉末包含具有至少 99.9 重量%的石墨烯。碳(基於金屬),質量平均直徑介於1 µm和5 mm之間,超微孔表面積介於約100 和 3000 m 2/g之間。 More specifically, the present invention includes a method of instantiating a material such as a gas composition (e.g. hydrogen) within a nanoporous carbon powder comprising the steps of: (i) adding the nanoporous carbon powder to a reactor as described below In a reactor assembly (RA), (ii) adding a first gas composition to the reactor assembly; (iii) powering one or more RA coils to a first electromagnetic energy level; (iv) making the nanoporous A carbon powder (the terms nanoporous carbon powder, nanoporous carbon material, and nanoporous carbon are used interchangeably herein) is subjected to harmonic patterning to exemplify a second gas composition, such as hydrogen, resulting in a product gas composition (v) collecting the product gas composition and optionally separating a second gas composition or components thereof (eg hydrogen). In one embodiment, a RA coil surrounds the nanoporous carbon bed to establish harmonic electromagnetic resonance in the ultramicropores of the nanoporous carbon powder. The first gas composition may be, for example, air, oxygen, hydrogen, helium, nitrogen, neon, argon, krypton, xenon, carbon monoxide, carbon dioxide or mixtures thereof, preferably nitrogen or air. Preferably, the nanoporous carbon powder comprises at least 99.9% by weight graphene. Carbon (metal based) with a mass mean diameter between 1 µm and 5 mm and an ultramicroporous surface area between about 100 and 3000 m 2 /g.

更具體地,本發明包括一種反應器組件,其包括: (a)含有奈米多孔碳材料的反應器室; (b)限定反應器室頂部的第二個多孔玻璃料;其中每個多孔玻璃料具有足以允許氣體滲透到反應器室中並包含奈米多孔碳材料的孔隙率; (c)設置在反應器蓋上方的反應器頂部空間; (d)圍繞反應器室和/或反應器頂部空間的1、2、3、4、5個或更多個RA 線圈,可操作地連接到一個或多個RA頻率發生器和/或一個或多個電源; (e)當存在0、1、2、3、4、5或更多對RA燈,其中RA燈對圍繞RA線圈周向設置,並在RA燈對和RA線圈之間限定空間; (f)一個可選的X射線源,用於將反應器室暴露於X射線; (g)一個或多個可選的雷射,當存在時,該雷射被配置為將雷射引向(例如,穿過或穿過)反應器室或反應器組件內的氣體;和 (h)計算機處理單元(computer processing unit,CPU),被配置為控制電源、頻率發生器、X射線源、燈、和/或雷射。 More specifically, the present invention includes a reactor assembly comprising: (a) a reactor chamber containing a nanoporous carbon material; (b) a second porous frit defining the top of the reactor chamber; wherein each porous frit has a porosity sufficient to permit gas permeation into the reactor chamber and comprises a nanoporous carbon material; (c) the reactor headspace disposed above the reactor lid; (d) 1, 2, 3, 4, 5 or more RA coils surrounding the reactor chamber and/or reactor headspace, operatively connected to one or more RA frequency generators and/or to one or multiple power sources; (e) when there are 0, 1, 2, 3, 4, 5, or more pairs of RA lamps, wherein the pairs of RA lamps are disposed circumferentially around the RA coil and define a space between the pair of RA lamps and the RA coil; (f) an optional X-ray source for exposing the reactor chamber to X-rays; (g) one or more optional lasers, when present, configured to direct the laser light towards (eg, through or through) the gas within the reactor chamber or reactor assembly; and (h) A computer processing unit (computer processing unit, CPU) configured to control a power supply, a frequency generator, an X-ray source, a lamp, and/or a laser.

如下文將更詳細描述的,反應器組件的氣體入口可以與至少一種氣體供應流體連接,該氣體供應選自空氣、氧氣、氫氣、氦氣、氮氣、氖氣、氬氣、氪氣、氙氣、一氧化碳、二氧化碳及其混合物;和/或(iii) 氣體供應通過由質量流量計控制的氣體歧管引導。As will be described in more detail below, the gas inlet of the reactor assembly may be fluidly connected to a supply of at least one gas selected from the group consisting of air, oxygen, hydrogen, helium, nitrogen, neon, argon, krypton, xenon, Carbon monoxide, carbon dioxide, and mixtures thereof; and/or (iii) The gas supply is directed through a gas manifold controlled by a mass flow meter.

如將在下文更詳細描述的,裝入反應器組件的奈米多孔碳粉末可以包括具有至少 95 重量%的石墨烯。碳(基於金屬),質量平均直徑介於1 µm和5 mm之間,超微孔表面積介於約100和 3000 m 2/g 之間。該奈米多孔碳粉末的較佳特徵在於酸調理,其中酸選自HCl、HF、HBr、HI、硫酸、磷酸、碳酸和硝酸,殘留水含量小於在室溫下暴露於小於40% RH的相對濕度(relative humidity, RH)時達到的值。在一個較佳的實施方案中,該製程考慮在該製程之前對奈米多孔碳粉末進行脫氣。 As will be described in more detail below, the nanoporous carbon powder charged to the reactor assembly may comprise graphene having at least 95% by weight. Carbon (metal based) with a mass mean diameter between 1 µm and 5 mm and an ultramicroporous surface area between about 100 and 3000 m 2 /g. The nanoporous carbon powder is preferably characterized by acid conditioning, wherein the acid is selected from the group consisting of HCl, HF, HBr, HI, sulfuric acid, phosphoric acid, carbonic acid, and nitric acid, and the residual water content is less than that of exposure to less than 40% RH at room temperature. The value reached at relative humidity (RH). In a preferred embodiment, the process contemplates degassing the nanoporous carbon powder prior to the process.

如以下將更詳細描述的,反應器組件可包括多個可施加電磁場的裝置,包括X射線源、線圈、雷射和燈或燈,包括筆形燈、短波燈和長波燈。可以獨立選擇每個設備(例如燈或雷射)產生的波長。As will be described in more detail below, the reactor assembly may include a number of devices capable of applying electromagnetic fields, including x-ray sources, coils, lasers, and lamps or lamps, including pencil lights, short-wave lamps, and long-wave lamps. The wavelength produced by each device (e.g. lamp or laser) can be selected independently.

如以下將更詳細描述的,RA 線圈可以由相同或不同的導電材料製成。例如,第一RA線圈包括銅繞線,第二RA線圈包括銅線和銀線的編織物,第三RA線圈是鉑線繞線並且每個 RA 線圈被配置為產生磁場,並且其中每個電源獨立提供交流和/或直流電流。As will be described in more detail below, the RA coils can be made of the same or different conductive materials. For example, the first RA coil includes copper wire, the second RA coil includes a braid of copper and silver wire, the third RA coil is platinum wire wound and each RA coil is configured to generate a magnetic field, and wherein each power supply Provides AC and/or DC current independently.

如將在下文更詳細描述的,反應器組件的特徵可以在於(i)第一對RA燈配置在由反應器室的中心軸和第一半徑限定的第一平面中,(ii)第二對RA燈配置在由反應器室的中心軸和第二半徑限定的第二平面中和(iii)第三對RA燈配置在由反應器室的中心軸和第三半徑限定的第三平面中。較佳地,每個 RA燈是筆形燈,其特徵在於尖端與中心軸基本等距,並且每對RA燈包括垂直RA燈和水平RA燈。 較佳地,每對燈圍繞反應器室的圓周等距地間隔開。As will be described in more detail below, the reactor assembly may be characterized in that (i) a first pair of RA lamps are arranged in a first plane defined by the central axis of the reactor chamber and a first radius, (ii) a second pair of The RA lamps are arranged in a second plane defined by the central axis of the reactor chamber and the second radius and (iii) the third pair of RA lamps are arranged in a third plane defined by the central axis of the reactor chamber and the third radius. Preferably, each RA lamp is a pencil lamp characterized by a tip substantially equidistant from the central axis, and each pair of RA lamps includes a vertical RA lamp and a horizontal RA lamp. Preferably, each pair of lamps is equally spaced around the circumference of the reactor chamber.

如以下將更詳細描述的,反應器組件還包括如下更具體定義的電磁嵌入外殼(electromagnetic embedding enclosure,E/MEE或EMEE)。 E/MEE通常沿著反應器組件氣體入口上游的氣體管線定位。通常,位於氣體入口上游的電磁嵌入外殼包括: (a)氣體入口; (b)至少一個位於內部氣體管線下方的E/MEE筆形燈,至少一個位於內部氣體管線上方的E/MEE筆形燈和至少一個位於內部氣體管線側面的E/MEE筆形燈; 其中每個E/MEE筆形燈獨立可旋轉地安裝,沿內部氣體管線的長度定位,以及 燈和/或線圈由電源供電,較佳由反應器組件的電源供電; 氣流、燈和/或線圈較佳地由一個或多個中央處理單元,較佳地反應器組件的中央處理單元(central processing unit,CPU)獨立控制。通常,CPU獨立控制每個E/MEE筆形燈的供電和每個E/MEE筆形燈的旋轉位置。 As will be described in more detail below, the reactor assembly also includes an electromagnetic embedding enclosure (E/MEE or EMEE) as defined more specifically below. The E/MEE is typically positioned along the gas line upstream of the reactor module gas inlet. Typically, the electromagnetic inset housing upstream of the gas inlet consists of: (a) gas inlets; (b) At least one E/MEE penlight located below the internal gas line, at least one E/MEE penlight located above the internal gas line, and at least one E/MEE penlight located to the side of the internal gas line; wherein each E/MEE penlight is independently rotatably mounted, positioned along the length of the internal gas line, and The lamps and/or coils are powered by a power source, preferably from the power source of the reactor assembly; The gas flow, lights and/or coils are preferably independently controlled by one or more central processing units, preferably a central processing unit (CPU) of the reactor assembly. Usually, the CPU independently controls the power supply of each E/MEE penlight and the rotational position of each E/MEE penlight.

如以下將更詳細描述的,E/MEE外殼通常可以是封閉的和不透明的,內部氣體管線可以是透明的並且與外殼出口和氣體入口流體連接的外部氣體管線可以是不透明的。 通常,內部氣體管線在50cm和5m或更長之間,並且直徑在2mm和25cm或更大之間。As will be described in more detail below, the E/MEE housing can generally be closed and opaque, the inner gas line can be transparent and the outer gas line fluidly connected to the housing outlet and gas inlet can be opaque. Typically, the internal gas lines are between 50cm and 5m or more, and between 2mm and 25cm or more in diameter.

如將在下面更詳細地描述的,該設備可以具有至少5個 E/MEE 筆形燈,其位於內部氣體管線上。每個 E/MEE 筆形燈可以獨立放置,使其縱軸 (i) 平行於內部氣體管線,(ii) 徑向地佈置在與內部氣體管線垂直的平面中,或 (iii) 垂直於創建的平面沿內部氣體管線的縱向軸線或沿內部氣體管線的垂直軸線。每個E/MEE筆形燈可以獨立地固定到一個或多個樞軸上,該樞軸允許相對於 x、y 和/或 z 軸在大約0到360度之間旋轉,其中 (i) x 軸被定義為軸 平行於氣體管線及其垂直平面,(ii) y 軸定義垂直於氣體管線並平行於其水平面的軸,以及 (iii) z 軸定義為垂直於氣體管線的軸 並平行於其垂直平面。As will be described in more detail below, the apparatus can have at least 5 E/MEE penlights located on the internal gas lines. Each E/MEE penlight can be positioned independently with its longitudinal axis (i) parallel to the internal gas line, (ii) radially arranged in a plane perpendicular to the internal gas line, or (iii) perpendicular to the plane created Along the longitudinal axis of the internal gas line or along the vertical axis of the internal gas line. Each E/MEE penlight can be independently secured to one or more pivots that allow rotation between approximately 0 and 360 degrees relative to the x, y, and/or z axes, where (i) the x axis is defined as the axis parallel to the gas line and its vertical plane, (ii) the y-axis defines the axis perpendicular to the gas line and parallel to its horizontal plane, and (iii) the z-axis defines the axis perpendicular to the gas line and parallel to its vertical plane flat.

如將在下文更詳細描述的,至少一個 E/MEE 筆形燈可以是氖燈,至少一個 E/MEE 筆形燈可以是氪燈,並且至少一個E/MEE筆形燈可以是氬氣燈。 可能希望將一個或多個 E/MEE 筆形燈與一個或多個(例如,一對)RA 燈匹配或配對。因此,可以從由氖燈、氪燈和氬燈組成的組中選擇至少一對 RA 筆形燈。As will be described in more detail below, the at least one E/MEE pencil lamp can be a neon lamp, the at least one E/MEE pencil lamp can be a krypton lamp, and the at least one E/MEE pencil lamp can be an argon lamp. It may be desirable to match or pair one or more E/MEE penlights with one or more (eg, a pair) RA lamps. Therefore, at least one pair of RA pencil lamps can be selected from the group consisting of neon, krypton and argon.

如以下將更詳細描述的,本發明還包括根據要求保護的方法和製程生產的奈米多孔碳粉末組合物和氣體組合物。As will be described in more detail below, the present invention also includes nanoporous carbon powder compositions and gas compositions produced according to the claimed methods and processes.

本發明涉及例示材料的方法,例如奈米多孔碳粉末中的氣體和/或氫氣。本發明包括包含以下步驟的方法:使包含奈米多孔碳粉末的床與第一氣體組合物和任選的電磁活化氣體接觸,同時將電磁輻射施加到奈米多孔碳粉末足以引起在碳奈米孔內和/或從碳奈米孔實例化的時間。 該方法產生與第一氣體組成基本不同的產物氣體組成。本發明的方法在生產新穎氣體組合物(如氫氣或按需氫氣)方面具有廣泛的適用性。The present invention relates to methods of instantiating materials such as gas and/or hydrogen in nanoporous carbon powders. The present invention includes a method comprising the steps of contacting a bed comprising nanoporous carbon powder with a first gas composition and optionally an electromagnetically activated gas while applying electromagnetic radiation to the nanoporous carbon powder sufficient to induce Time to instantiation within the nanopore and/or from the carbon nanopore. The method produces a product gas composition that is substantially different from the first gas composition. The method of the present invention has broad applicability in the production of novel gas compositions such as hydrogen or hydrogen on demand.

奈米多孔碳粉末Nanoporous carbon powder

奈米多孔碳粉末或奈米結構化多孔碳可用於本發明的製程和方法。奈米多孔碳粉末或奈米結構化多孔碳在本文中也稱為「起始材料」或「裝料材料」。 碳粉較佳地提供表面和孔隙率 (例如,超微孔隙率),以增強金屬沉積,包括沉積、例示和生長。較佳的碳粉包括活性碳、工程碳、石墨和石墨烯。例如,可用於本文的碳材料包括石墨烯泡沫、纖維、奈米棒、奈米管、富勒烯、薄片、炭黑、乙炔黑、中間相碳顆粒、微珠、和顆粒。術語「粉末」旨在定義離散的細小顆粒或顆粒。粉末可以是乾燥的和可流動的,也可以是加濕的和結塊的,例如可以通過攪拌破碎的餅。儘管粉末是較佳的,但本發明考慮用更大的碳材料,例如包括更大的多孔碳塊和材料的磚和棒來代替本發明製程中的粉末。Nanoporous carbon powder or nanostructured porous carbon can be used in the processes and methods of the present invention. Nanoporous carbon powder or nanostructured porous carbon is also referred to herein as "starting material" or "charge material". Carbon powder preferably provides surface and porosity (eg, ultramicroporosity) to enhance metal deposition, including deposition, instantiation, and growth. Preferred carbon powders include activated carbon, engineered carbon, graphite and graphene. For example, carbon materials useful herein include graphene foams, fibers, nanorods, nanotubes, fullerenes, flakes, carbon black, acetylene black, mesocarbon particles, microbeads, and granules. The term "powder" is intended to define discrete fine grains or granules. Powders can be dry and flowable, or moistened and agglomerated, such as cakes that can be broken by stirring. Although powders are preferred, the present invention contemplates replacing powders in the process of the present invention with larger carbon materials, such as bricks and rods comprising larger porous carbon blocks and materials.

本文使用的實施例典型地描述了碳的高度純化形式,例如>99.995%wt的純碳(金屬基)。為了證明原理、質量控制和確保本文描述的結果不是碳源內交叉污染或擴散的結果,舉例說明了高度純化的碳形式。然而,預期也可以使用純度較低的碳材料。因此,碳粉可以佔至少約95%wt的碳,例如至少約96%、97%、98%、或99%wt的碳。在一個較佳實施例中,碳粉可以是至少99.9%、99.99%、或99.999%wt的碳。在每種情況下,純度都可以基於灰基或金屬來確定。在另一個較佳實施例中,碳粉是不同碳類型和形式的混合物。 在一個實施例中,碳床由不同的奈米工程多孔碳形式的混合物組成。碳粉可以包含摻雜劑。The examples used herein typically describe highly purified forms of carbon, eg >99.995% wt pure carbon (metal based). A highly purified form of carbon is exemplified for proof of principle, quality control, and to ensure that the results described here are not the result of cross-contamination or diffusion within the carbon source. However, it is contemplated that less pure carbon materials may also be used. Thus, the carbon powder can comprise at least about 95% wt carbon, such as at least about 96%, 97%, 98%, or 99% wt carbon. In a preferred embodiment, the carbon powder can be at least 99.9%, 99.99%, or 99.999% wt carbon. In each case, purity can be determined based on either the gray base or the metal. In another preferred embodiment, the carbon powder is a mixture of different carbon types and forms. In one embodiment, the carbon bed is composed of a mixture of different nanoengineered porous carbon forms. Carbon powder may contain dopants.

碳粉較佳包含微粒。 較佳碳粉的體積中位數幾何粒度可以在小於約1μm和5mm或更大之間。較佳的碳粉可以介於約1μm和500μm之間,例如介於約5μm和200μm之間。示例中使用的較佳的碳粉具有約7μm至13μm和約30μm至150μm之間的中位直徑。The toner preferably contains fine particles. Preferred toners can have a volume median geometric particle size between less than about 1 micron and 5 mm or greater. Preferred carbon powders may be between about 1 μm and 500 μm, such as between about 5 μm and 200 μm. Preferred carbon powders used in the examples have a median diameter between about 7 μm to 13 μm and about 30 μm to 150 μm.

碳顆粒尺寸的分散性可以提高產物的質量。 使用尺寸均勻或單一粒徑分布的碳材料是方便的。因此,較佳的碳的特徵在於多分散性指數為約0.5和1.5之間,例如約0.6和1.4之間、約0.7和1.3之間、約0.8和1.2之間、或約0.9和1.1之間。 多分散性指數(polydispersity index,PDI)是粒子群的質量平均直徑和數量平均直徑之比。以雙峰粒度為特徵的碳材料可以改善反應器中的氣流。The dispersibility of the carbon particle size can improve the quality of the product. It is convenient to use a carbon material having a uniform size or a single particle size distribution. Thus, preferred carbons are characterized by a polydispersity index between about 0.5 and 1.5, such as between about 0.6 and 1.4, between about 0.7 and 1.3, between about 0.8 and 1.2, or between about 0.9 and 1.1 . The polydispersity index (polydispersity index, PDI) is the ratio of the mass average diameter to the number average diameter of the particle population. Carbon materials characterized by bimodal particle sizes can improve gas flow in reactors.

碳粉較佳為多孔的。存在碳顆粒內的孔或空腔可以是大孔、微孔、奈米孔、和/或超微孔。與石墨烯相比,孔可能包括電子分佈缺陷,通常是由於孔、裂縫或裂縫、角落、邊緣、膨脹或表面化學變化(例如添加化學部分或表面基團)引起的形態變化引起的。例如,考慮到碳片、富勒烯或奈米管層之間可能出現的空間變化。據信,實例化優先發生在孔或含有缺陷的孔處或之內,並且表面特性的性質會影響實例化。例如,Micromeritics 增強的孔分佈分析(例如ISO 15901-3)可用於表徵碳。碳粉較佳為奈米多孔的。「奈米多孔碳粉末」在本文中定義為以具有小於100nm的孔尺寸 (例如,寬度或直徑) 的奈米孔為特徵的碳粉。例如,IUPAC 將奈米多孔材料細分為微孔材料(孔徑在0.2nm到2nm之間)、中孔材料(孔徑在2nm到50nm之間)和大孔材料(孔徑大於50nm)。超微孔在本文中定義為具有小於約1nm的孔徑。The carbon powder is preferably porous. The pores or cavities present within the carbon particles may be macropores, micropores, nanopores, and/or ultramicropores. In contrast to graphene, pores may include electron distribution defects, usually due to morphological changes due to pores, cracks or fissures, corners, edges, expansion, or surface chemical changes such as addition of chemical moieties or surface groups. For example, consider possible spatial variations between carbon sheets, fullerenes, or nanotube layers. It is believed that instancing occurs preferentially at or within pores or pores containing defects, and that the nature of the surface features affects instancing. For example, Micromeritics enhanced pore distribution analysis (eg ISO 15901-3) can be used to characterize carbon. The carbon powder is preferably nanoporous. "Nanoporous carbon powder" is defined herein as a carbon powder characterized by nanopores having a pore size (eg, width or diameter) of less than 100 nm. For example, IUPAC subdivides nanoporous materials into microporous materials (pore size between 0.2nm and 2nm), mesoporous materials (pore size between 2nm and 50nm) and macroporous materials (pore size greater than 50nm). Ultramicropores are defined herein as having a pore size of less than about 1 nm.

孔徑和/或幾何形狀的均勻性也是需要的。例如,較佳的碳材料 (例如粉末)中的超微孔佔總孔隙率的至少約10%,例如至少約20%、至少30%、至少約40%、至少約50%、至少約60%、至少約70%、至少約80%或至少約90%。較佳的碳材料 (例如,粉末) 的特徵在於具有相同直徑的超微孔的顯著數量、普遍程度、或濃度,從而在孔、腔和間隙內提供可預測的電磁諧波共振和/或駐波形式。本文中的「直徑」一詞並非旨在要求孔的球形幾何形狀,而是旨在包含表面之間的尺寸或其他特徵距離。因此,較佳的碳材料 (例如,粉末) 的特徵在於相同直徑的孔隙率 (例如奈米孔或超微孔) 佔總孔隙率的至少約10%,例如至少約20%、至少約30%、至少約40%、至少約50%、至少約60%、至少約70%、至少約80%、或至少約90%。Uniformity of pore size and/or geometry is also desirable. For example, preferred carbon materials (e.g., powders) have ultramicropores at least about 10% of the total porosity, such as at least about 20%, at least 30%, at least about 40%, at least about 50%, at least about 60% , at least about 70%, at least about 80%, or at least about 90%. Preferred carbon materials (e.g., powders) are characterized by a significant number, prevalence, or concentration of ultramicropores of the same diameter, thereby providing predictable electromagnetic harmonic resonance and/or dwell within the pores, cavities, and gaps. wave form. The term "diameter" in this context is not intended to require the spherical geometry of the pores, but is intended to encompass dimensions or other characteristic distances between surfaces. Accordingly, preferred carbon materials (e.g., powders) are characterized by equal diameter porosity (e.g., nanopores or ultramicropores) of at least about 10%, such as at least about 20%, at least about 30%, of the total porosity , at least about 40%, at least about 50%, at least about 60%, at least about 70%, at least about 80%, or at least about 90%.

測量材料的吸附等溫線可用於表徵碳材料的表面積、孔隙率,例如外孔隙率。具體較佳的表面積在約1m 2/g和3000m 2/g之間的碳粉。 具體較佳具有至少約50m 2/g、較佳至少約300m 2/g、至少約400m 2/g、至少約500m 2/g或更高的超微孔表面積的碳粉。可以獲得具有表面積規格的活性炭或工程炭以及其他優質碳源。表面積可以通過 BET 表面吸附技術獨立測量。 Measuring the adsorption isotherm of a material can be used to characterize the surface area, porosity, eg external porosity of the carbon material. Particularly preferred carbon powders have a surface area between about 1 m 2 /g and 3000 m 2 /g. Specifically preferred are carbon powders having an ultramicroporous surface area of at least about 50 m2 /g, preferably at least about 300 m2 /g, at least about 400 m2 /g, at least about 500 m2 /g, or higher. Activated or engineered carbons are available with surface area specifications, as well as other high-quality carbon sources. The surface area can be measured independently by the BET surface adsorption technique.

在許多實驗中探索了表面積與金屬沉積的相關性。在77K(-196.15C)的氮氣下使用Micromeritics BET表面積分析技術進行的典型孔表面積測量,並未發現金屬元素沉積在≥5σ信賴水準或重合概率上有實質相關性。然而,觀察到與超微孔(尺寸或直徑小於1nm的孔)的相關性。在不受理論約束的情況下,實體化被認為與超微孔和超微孔網路的共振腔特徵相關,例如表面或壁之間的距離。超微孔的特徵可以從藉由BET測量的超微孔直徑預測,例如藉由密度函數理論(density function theory,DFT)模型增強。借助機器學習,可以在超微孔尺寸、分佈、無序重疊特徵、壁分離和直徑與元素金屬成核之間建立更精確的關係。The correlation of surface area with metal deposition was explored in a number of experiments. Typical pore surface area measurements using the Micromeritics BET surface area analysis technique under nitrogen at 77K (-196.15C) did not reveal a substantial correlation of metallic element deposition at ≥5σ confidence levels or coincidence probabilities. However, a correlation with ultramicropores (pores smaller than 1 nm in size or diameter) was observed. Without being bound by theory, solidification is believed to be related to resonant cavity characteristics of nanopores and nanoporous networks, such as the distance between surfaces or walls. The characteristics of ultramicropores can be predicted from ultramicropore diameters measured by BET, for example enhanced by density function theory (DFT) models. With the help of machine learning, more precise relationships can be established between ultramicropore size, distribution, disordered overlapping features, wall separation and diameter, and elemental metal nucleation.

碳材料和粉末可從眾多商業供應商處獲得。MSP-20X和MSC-30是高表面積鹼性活性炭材料,標稱表面積為2,000-2,500 m 2/g和>3,000 m 2/g,中位直徑分別為7-13µm和60-150µm(Kansai Coke & 化學品公司)。 Norit GSX是一種從Alfa Aesar獲得的蒸汽洗滌活性炭。實驗部分使用的純化碳形式均超過≥99.998重量% C(金屬基)。 Carbon materials and powders are available from a number of commercial suppliers. MSP-20X and MSC-30 are high surface area alkaline activated carbon materials with nominal surface areas of 2,000-2,500 m 2 /g and >3,000 m 2 /g and median diameters of 7-13µm and 60-150µm, respectively (Kansai Coke & chemical companies). Norit GSX is a steam scrubbed activated carbon obtained from Alfa Aesar. The purified carbon forms used in the experimental part all exceeded ≥99.998 wt% C (metal-based).

也可能需要改變碳的表面化學性質。例如,當用酸或鹼調節碳時,觀察到性能得到改善。使碳與選自HCl、HF、HBr、HI、硫酸、磷酸、碳酸、和硝酸的稀酸溶液接觸,然後用水(例如去離子水)洗滌可能是有益的。酸的量較佳小於約30%、小於約25%、小於約20%、小於約15%、小於約10%、或小於約5%,較佳小於或等於1% 體積。用於酸洗的較佳酸是pKa具有小於約 3,例如pKa小於約2的酸。洗滌後,將碳置於例如惰性氣體、氦氣、氫氣或它們的混合物的氣體籠罩下是有益的。替代氣體包括一氧化碳、二氧化碳、氮氣、氬氣、氖氣、氪氣、氦氣、氨氣、和氫氣。碳也可以在酸處理之前或之後暴露於鹼,例如KOH。It may also be necessary to alter the surface chemistry of the carbon. For example, improved performance was observed when the carbon was tuned with acids or bases. It may be beneficial to contact the carbon with a dilute acid solution selected from HCl, HF, HBr, HI, sulfuric acid, phosphoric acid, carbonic acid, and nitric acid, followed by washing with water (eg, deionized water). The amount of acid is preferably less than about 30%, less than about 25%, less than about 20%, less than about 15%, less than about 10%, or less than about 5%, preferably less than or equal to 1% by volume. Preferred acids for pickling are those with a pKa of less than about 3, such as a pKa of less than about 2. After washing, it is beneficial to place the carbon under a blanket of gas such as inert gas, helium, hydrogen or mixtures thereof. Alternative gases include carbon monoxide, carbon dioxide, nitrogen, argon, neon, krypton, helium, ammonia, and hydrogen. Carbon can also be exposed to a base, such as KOH, before or after acid treatment.

控制可能包括水分的碳中的殘留水含量可以提高性能。例如,碳材料可以在溫度為至少約100°C,較佳至少約125°C,例如在125°C和300°C 之間的烘箱中放置至少30分鐘,例如約1小時。烘箱可以處於環境或負壓下,例如在真空下。或者,可將碳材料置於具有高真空的烘箱中,溫度至少約為250°C,較佳至少約為350°C,至少1小時,例如至少2、3、4、5、或6小時。或者,可以將碳材料置於具有高真空的烘箱中,溫度至少約為700°C,較佳至少約為850°C,至少1小時,例如至少 2、3、4、5、或6小時。或者,可藉由真空或冷凍乾燥去除水或水分,而無需大量加熱。較佳地,碳的水或水分含量按碳重量計小於約 35%、30%、25%、20%、15%、10%、5%,例如小於約2%。在其他實施例中,碳可以暴露於特定的相對濕度(RH),例如0.5%、1%、2%、5%、12% RH 或 40% RH或70% RH或80% RH或90% RH ,例如,在 22°C。Controlling the residual water content in the carbon, which may include moisture, can improve performance. For example, the carbon material can be placed in an oven at a temperature of at least about 100°C, preferably at least about 125°C, such as between 125°C and 300°C, for at least 30 minutes, such as about 1 hour. The oven can be at ambient or under negative pressure, such as under vacuum. Alternatively, the carbon material can be placed in an oven with high vacuum at a temperature of at least about 250°C, preferably at least about 350°C, for at least 1 hour, such as at least 2, 3, 4, 5, or 6 hours. Alternatively, the carbon material can be placed in an oven with high vacuum at a temperature of at least about 700°C, preferably at least about 850°C, for at least 1 hour, such as at least 2, 3, 4, 5, or 6 hours. Alternatively, water or moisture can be removed by vacuum or freeze drying without extensive heating. Preferably, the carbon has a water or moisture content of less than about 35%, 30%, 25%, 20%, 15%, 10%, 5%, such as less than about 2%, by weight of carbon. In other embodiments, the carbon may be exposed to a specific relative humidity (RH), such as 0.5%, 1%, 2%, 5%, 12% RH, or 40% RH, or 70% RH, or 80% RH, or 90% RH , for example, at 22°C.

碳材料的預處理可以選自純化、增濕、活化、酸化、洗滌、氫化、乾燥、化學改性(有機和無機)和共混步驟中的一種或多種,包括所有步驟。例如,碳材料可以被還原、質子化或氧化。步驟的順序可以如所描述的那樣,或者兩個或更多個步驟可以以不同的順序進行。Pretreatment of carbon materials may be selected from one or more of purification, humidification, activation, acidification, washing, hydrogenation, drying, chemical modification (organic and inorganic) and blending steps, including all steps. For example, carbon materials can be reduced, protonated, or oxidized. The order of steps may be as described, or two or more steps may be performed in a different order.

例如,將MSP-20X暴露於鹼(C:KOH,莫耳比為1:0.8)中,在700°C下活化2小時,用酸洗滌,然後使用HCl和HNO 3洗滌氫化以分別形成MSP-20X批號1000和105。MSP-20X用酸洗滌,在使用HCl和HNO 3洗滌氫化以分別形成 MSP-20X批號1012和1013。為儲存氫氣而開發的活性炭粉末經過HCl酸洗,然後進行HNO 3洗滌和氫化以形成APKI批號1001和1002,如Yuan, J. Phys. Chem. B20081124614345-14357] 所述。聚醚醚酮(PEEK,Victrex 450P)和聚醚醯亞胺(PEI,Ultem ®1000)藉由在320°C的靜態空氣中熱氧化15小時提供,並在550-1100°C溫度範圍內在氮氣氛中碳化,碳產量為50–60 wt%。然後通過以下程序活化該等碳:(1)在酒精存在下,用KOH在KOH/碳的比例為1/1–1/6 (w/w)下研磨碳化聚合物,形成精細糊狀物;(2)將糊狀物在氮氣氣氛中加熱至600-850°C,持續2小時;(3)用去離子水清洗和漂洗並在真空烘箱中乾燥。PEEK/PEI(50/50 wt)混合物由PoroGen, Inc.友情提供。同樣,將批號1001和1002的酸洗滌順序顛倒形成AKI批號1003和1004。通用級天然石墨,約200目,購自Alfa Aesar,產品編號 40799。石墨批號R和Z用HCl洗滌和氫化,分別形成R批號1006和Z批號 1008。將Alfa Aesar石墨R和Z用硝酸洗滌和氫化,分別形成R批號1007和Z批號1009。 MSC-30(Kansai Coke and Chemicals)經過酸洗滌,在使用HCl和HNO 3洗滌氫化以分別形成MSC30批號1010和1011。MSC-30 暴露於鹼(C:KOH,莫耳比為1:0.8),在 700°C下活化 2 小時,用HCl或硝酸洗滌,然後氫化分別形成 MSC-30批號1014(HCl洗滌)和 1015(HNO 3洗滌)。 MSP-20X、MSC-30、Norit GSX、和Alfa Aesar R分別由MWI, Inc.針對MSP-20X批號2000和2004、MSC-30批號2001、2006、 和2008、Norit GSX 批號2005和2007、以及Alfa Aesar R批號2009進行純化。MSP-20X批號2000和MSC-30 2001用HCl洗滌並氫化,分別形成MSP-20X批號2002和MSC-30批號2003。Alfa Aesar R 分別用1%、5%、10%、15%、20%、25%和30% HCl(vol.)洗滌,然後分別氫化成R Lot Graphite n% vol HCl。純化的MSP-20X(批號 2006)同樣用HCl、硝酸、HF或H 2SO 4洗滌,分別形成MSP-20X 1% HCl、MSP-20X 1% HNO 3、MSP-20X 0.4% HF、MSP-20X 0.55% H 2SO 4(批號1044)。用硝酸、HF或H 2SO 4類似地洗滌純化的Norit GSX(批號2007),分別形成Norit GSX 1% HNO 3(批號1045)、Norit-GSX 0.4% HF、Norit-GSX 0.55% H 2SO 4。純化的MSC30(批號2008)類似地用HCl和H 2SO 4洗滌以形成MSC30 1% HCl和MSC30 5% H 2SO 4。將純化的MSP20X(批號2006)、Norit GSX(批號2007)和MSC30(批號2008)氫化。使用甲醇作為潤濕劑,用1% HCl 洗滌純化的MSP-20X、Norit GSX和MSC30。回收AKI-S-108批號1021-1024。Ref-X Blend是40% Alfa Aesar R:60%MSP-20X(批號2006)在850°C 吸,然後在138kPa(20 psi)下暴露於CO 25天。 For example, MSP-20X was exposed to alkali (C:KOH, molar ratio 1:0.8), activated at 700°C for 2 hours, washed with acid, and then hydrogenated using HCl and HNO3 washes to form MSP-20X, respectively. 20X lot numbers 1000 and 105. MSP-20X was acid washed and hydrogenated after washing with HCl and HNO3 to form MSP-20X batches 1012 and 1013, respectively. Activated carbon powder developed for hydrogen storage was acid washed with HCl, followed by HNO3 washing and hydrogenation to form APKI batch numbers 1001 and 1002, as described by Yuan, J. Phys. Chem. B 20081124614345-14357]. Polyetheretherketone (PEEK, Victrex 450P) and polyetherimide (PEI, Ultem ® 1000) were prepared by thermal oxidation in static air at 320°C for 15 hours, and in the temperature range of 550-1100°C under nitrogen Carbonization in atmosphere with a carbon yield of 50–60 wt%. The carbons were then activated by the following procedure: (1) Grinding the carbonized polymer with KOH in the presence of alcohol at a KOH/carbon ratio of 1/1–1/6 (w/w) to form a fine paste; (2) Heat the paste to 600-850° C. for 2 hours in a nitrogen atmosphere; (3) Wash and rinse with deionized water and dry in a vacuum oven. PEEK/PEI (50/50 wt) blend was kindly provided by PoroGen, Inc. Likewise, the acid wash sequence of batches 1001 and 1002 was reversed to form AKI batches 1003 and 1004. General-purpose natural graphite, about 200 mesh, was purchased from Alfa Aesar, product number 40799. Graphite lots R and Z were washed with HCl and hydrogenated to form R lot 1006 and Z lot 1008, respectively. Alfa Aesar graphites R and Z were washed with nitric acid and hydrogenated to form R Lot 1007 and Z Lot 1009, respectively. MSC-30 (Kansai Coke and Chemicals) was acid washed, hydrogenated after washing with HCl and HNO3 to form MSC30 lot numbers 1010 and 1011, respectively. MSC-30 was exposed to alkali (C:KOH, molar ratio 1:0.8), activated at 700°C for 2 hours, washed with HCl or nitric acid, and then hydrogenated to form MSC-30 batches 1014 (HCl washed) and 1015, respectively ( HNO3 wash). MSP-20X, MSC-30, Norit GSX, and Alfa Aesar R are manufactured by MWI, Inc. for MSP-20X lot numbers 2000 and 2004, MSC-30 lot numbers 2001, 2006, and 2008, Norit GSX lot numbers 2005 and 2007, and Alfa Aesar R Lot No. 2009 was used for purification. MSP-20X Lot 2000 and MSC-30 2001 were washed with HCl and hydrogenated to form MSP-20X Lot 2002 and MSC-30 Lot 2003, respectively. Alfa Aesar R was washed with 1%, 5%, 10%, 15%, 20%, 25% and 30% HCl (vol.), and then hydrogenated to R Lot Graphite n% vol HCl, respectively. Purified MSP -20X (Lot No. 2006) was also washed with HCl, nitric acid, HF or H2SO4 to form MSP-20X 1% HCl, MSP-20X 1% HNO3 , MSP-20X 0.4% HF, MSP-20X 0.55% H2SO4 (Lot 1044 ). Purified Norit GSX (Lot No. 2007) was similarly washed with nitric acid, HF or H2SO4 to form Norit GSX 1% HNO3 (Lot No. 1045), Norit-GSX 0.4% HF, Norit-GSX 0.55% H2SO4 . Purified MSC30 (Lot 2008) was similarly washed with HCl and H2SO4 to form MSC30 1 % HCl and MSC30 5% H2SO4 . Purified MSP20X (Lot 2006), Norit GSX (Lot 2007) and MSC30 (Lot 2008) were hydrogenated. Purified MSP-20X, Norit GSX, and MSC30 were washed with 1% HCl using methanol as a wetting agent. AKI-S-108 lot numbers 1021-1024 were recovered. Ref-X Blend is 40% Alfa Aesar R:60% MSP-20X (Lot No. 2006) imbibed at 850°C, then exposed to CO2 at 138kPa (20 psi) for 5 days.

較佳在開始該製程之前對奈米多孔碳粉末進行脫氣。例如,奈米多孔碳粉末可以通過使粉末經受真空來脫氣。可以在無論有無升高溫度下使用一系列的真空。已經發現施加約10 -2托至10 -6托的真空就足夠了。在將粉末裝入反應器室之前,可以對粉末進行脫氣。較佳地,可以在將粉末裝入反應器室之後對粉末進行脫氣。在以下非限制性的實例中,將碳粉裝入反應器室中,置於反應器組件中,並且通過將反應器組件保持在真空下使整個反應器組件經受脫氣步驟。脫氣步驟可以在室溫或升高的溫度下進行。例如,在400°C 的溫度下獲得了良好的結果。其他溫度可以是至少50°C,例如至少100°C、至少150°C、至少200°C或至少300°C。脫氣步驟可維持至少30分鐘,例如至少45分鐘、至少60分鐘、至少4小時、至少6小時、至少12小時、或至少24 小時。對碳粉進行脫氣可確保已從系統中去除污染物元素。 The nanoporous carbon powder is preferably degassed before starting the process. For example, nanoporous carbon powders can be degassed by subjecting the powders to a vacuum. A series of vacuums can be used with or without elevated temperature. It has been found that applying a vacuum of about 10 -2 Torr to 10 -6 Torr is sufficient. The powder may be degassed prior to loading it into the reactor chamber. Preferably, the powder may be degassed after it has been charged into the reactor chamber. In the following non-limiting example, carbon powder was loaded into a reactor chamber, placed in a reactor assembly, and the entire reactor assembly was subjected to a degassing step by maintaining the reactor assembly under vacuum. The degassing step can be performed at room temperature or at elevated temperature. For example, good results were obtained at a temperature of 400°C. Other temperatures may be at least 50°C, such as at least 100°C, at least 150°C, at least 200°C or at least 300°C. The degassing step can be for at least 30 minutes, eg, at least 45 minutes, at least 60 minutes, at least 4 hours, at least 6 hours, at least 12 hours, or at least 24 hours. Degassing the toner ensures that contaminating elements have been removed from the system.

碳可以回收或再利用。在回收碳中,碳可以任選地經受酸洗和/或水去除一次或多次。 在該實施例中,碳可以重複使用一次或多次,例如2、3、4、5、10、15、20次或約25次或更多次。碳也可以全部或部分補充。已經發現回收或再利用碳可以提高金屬奈米結構的產率並調整成核特性,從而能夠改變元素選擇性和所得分佈。因此,本發明的一個方面是用回收的奈米多孔碳粉末,例如,先前已經經受本發明的製程一次或多次的奈米多孔碳粉末來實施該製程。Carbon can be recycled or reused. In recycling the carbon, the carbon can optionally be subjected to acid washing and/or water removal one or more times. In this embodiment, the carbon can be reused one or more times, such as 2, 3, 4, 5, 10, 15, 20 or about 25 or more times. Carbon can also be added in whole or in part. Recycling or reusing carbon has been found to increase the yield of metal nanostructures and tune the nucleation properties, enabling changes in element selectivity and resulting distribution. Accordingly, one aspect of the present invention is to practice the process with recycled nanoporous carbon powder, eg, nanoporous carbon powder that has previously been subjected to the process of the present invention one or more times.

奈米多孔碳組合物Nanoporous carbon composition

通過本文所述的製程生產的奈米多孔碳組合物具有若干令人驚訝和獨特的特性。碳粉的奈米孔隙率通常在加工過程中被保留並且可以例如用掃描式電子顯微鏡目測或藉由BET分析建模來確認。粉末的目視檢查可以識別存在於奈米孔內和奈米孔周圍的元素奈米結構。奈米結構通常是元素金屬。粉末的目視檢查還可以識別存在於奈米孔內和奈米孔周圍的元素宏觀結構。宏觀結構通常是元素金屬並且通常包含間隙和/或內部碳,如發明人Nagel在美國專利10,889,892中一般性描述的,該專利通過引用整體併入本文。用於例示氣體的製程在發明人Nagel的 USSN 63/241,697中進行了描述,該專利通過引用整體併入本文。The nanoporous carbon compositions produced by the processes described herein have several surprising and unique properties. The nanoporosity of carbon powders is generally preserved during processing and can be confirmed, for example, visually with a scanning electron microscope or modeled by BET analysis. Visual inspection of the powder can identify elemental nanostructures present in and around the nanopore. The nanostructures are usually elemental metals. Visual inspection of the powder can also identify the elemental macrostructure present in and around the nanopore. The macrostructure is typically elemental metallic and often contains interstitial and/or internal carbon as generally described by inventor Nagel in US Patent 10,889,892, which is incorporated herein by reference in its entirety. The process used to exemplify the gas is described in USSN 63/241,697 to Nagel, which is hereby incorporated by reference in its entirety.

通常,奈米多孔碳組合物的孔隙率至少約為奈米多孔碳粉末起始或裝料材料的超微孔的孔隙率的70%,並且總空隙體積為本體材料體積的約40%或更多。存在碳顆粒內的孔或空腔可以是大孔、微孔、奈米孔、和/或超微孔。與石墨烯相比,孔可能包括電子分佈缺陷,通常是由於孔、裂縫或縫隙、邊緣、角落、膨脹、配位鍵或表面化學的其他變化(例如化學官能基或表面基團等的添加)引起的形態變化。例如,可以考慮在碳片、富勒烯、奈米管或插層碳層之間可能出現的空間。據信,例示優先發生在孔處或孔內,並且表面特性的性質會影響沉積物。例如,Micromeritics增強的孔分佈分析(例如ISO 15901-3)可用於表徵碳。較佳碳粉是奈米多孔的。現在已經出人意料地發現氣體和其他輕質材料可以被例示並收集在氣流中。Typically, the porosity of the nanoporous carbon composition is at least about 70% that of the ultramicropores of the nanoporous carbon powder starting or charge material, and the total void volume is about 40% or more of the volume of the bulk material. More. The pores or cavities present within the carbon particles may be macropores, micropores, nanopores, and/or ultramicropores. Compared to graphene, pores may include electron distribution defects, usually due to pores, cracks or gaps, edges, corners, swelling, coordination bonds or other changes in surface chemistry (e.g. addition of chemical functional groups or surface groups, etc.) caused shape changes. For example, spaces that may occur between carbon sheets, fullerenes, nanotubes, or intercalated carbon layers can be considered. It is believed that instantiation occurs preferentially at or within the pores and that the nature of the surface properties affects the deposits. For example, Micromeritics enhanced pore distribution analysis (e.g. ISO 15901-3) can be used to characterize carbon. Preferred carbon powders are nanoporous. It has now surprisingly been found that gases and other lightweight materials can be instantiated and collected in a gas flow.

方法和設備method and equipment

從概念上講,用於基準實驗的設備可以分為兩個主要領域:氣體處理和反應器組裝。Conceptually, the equipment used for the benchmark experiments can be divided into two main areas: gas handling and reactor assembly.

氣體處理:Gas handling:

氣體處理部分控制氣體成分和流速,可選擇將電磁(例如光)訊息或電磁氣體預處理嵌入反應器。本發明包括用於處理氣體(進料氣體或第一氣體組合物,在本文中可互換使用)的電磁嵌入外殼(E/MEE或EMEE)或設備,其包括或由以下各項組成: 中央處理單元和供電設備; 一種或多種氣體供應; 具有外殼入口和外殼出口的外殼; 上游氣體管線,其與每個氣體供應和外殼入口流體連接; 與外殼入口和外殼出口流體連接的內部氣體管線; 與外殼出口流體連接的下游氣體管線; 至少一個位於內部氣體管線下方的筆形燈,至少一個位於內部氣體管線上方的筆形燈、和/或至少一個位於內部氣體管線一側的筆形燈; 可選的短波燈和/或長波燈;和 纏繞在內部氣體管線上的可選線圈,可操作地連接到頻率發生器; 其中,每個燈獨立可旋轉地安裝,沿內部氣體管線的長度定位,並由電源供電;和 其中,中央處理單元獨立地控制對頻率發生器(如果有的話)和每個燈的供電,和每個燈的旋轉位置。 進料氣體可以較佳地是研究級或高純度氣體,例如,藉由一個或多個氣體供應如壓縮氣瓶輸送。可以使用的氣體的實例包括例如空氣、氧氣、氮氣、氫氣、氦氣、氖氣、氬氣、氪氣、氙氣、氨、一氧化碳、二氧化碳及其混合物。較佳的氣體包括氮氣、氦氣、氬氣、一氧化碳、二氧化碳、及其混合物。氮氣、空氣、和氦氣為較佳的。在以下實例中,使用了高度純化的氮氣。使用高度純化的氮氣有助於產物氣體分析。進料氣體可以在整個製程中連續或不連續地加入。 The gas handling section controls the gas composition and flow rate, with the option of embedding electromagnetic (eg optical) messages or electromagnetic gas pretreatment into the reactor. The present invention includes an electromagnetic embedded enclosure (E/MEE or EMEE) or apparatus for processing a gas (feed gas or first gas composition, used interchangeably herein) comprising or consisting of: central processing unit and power supply; supply of one or more gases; a housing having a housing inlet and a housing outlet; Upstream gas lines fluidly connected to each gas supply and enclosure inlet; an internal gas line fluidly connected to the enclosure inlet and the enclosure outlet; a downstream gas line fluidly connected to the housing outlet; at least one penlight positioned below the internal gas line, at least one penlight positioned above the internal gas line, and/or at least one penlight positioned to one side of the internal gas line; Optional short-wave and/or long-wave lights; and An optional coil wound on the internal gas line, operatively connected to the frequency generator; wherein each lamp is independently rotatably mounted, positioned along the length of the internal gas line, and powered by an electrical source; and Wherein, the central processing unit independently controls the power supply to the frequency generator (if any) and each lamp, and the rotational position of each lamp. The feed gas may preferably be research grade or high purity gas, for example, delivered by one or more gas supplies such as compressed gas cylinders. Examples of gases that may be used include, for example, air, oxygen, nitrogen, hydrogen, helium, neon, argon, krypton, xenon, ammonia, carbon monoxide, carbon dioxide, and mixtures thereof. Preferred gases include nitrogen, helium, argon, carbon monoxide, carbon dioxide, and mixtures thereof. Nitrogen, air, and helium are preferred. In the following examples, highly purified nitrogen was used. Product gas analysis is facilitated by the use of highly purified nitrogen. Feed gas can be added continuously or discontinuously throughout the process.

一種或多種氣體(例如,2、3、4、5、或更多種氣體)可以任選地通過包括質量流量計的氣體歧管以產生第一氣體組合物(亦稱為反應器進料氣體)。之後反應器進料氣體可以繞過電磁(EM)嵌入外殼(E/MEE)或通過一個或多個E/MEE。E/MEE將反應器進料氣體暴露於各種電磁場(EMF)源。可以控制流速、組成、和停留時間。反應器進料氣體的流速可以在0.01標準升每分鐘(SLPM)和10 SLPM之間,或100 SLPM或更多。恆定的氣流可以維持反應器內的淨化環境。圖1所示示意圖描述了氣體通過樣本E/MEE的流動路徑。樣本E/MEE包括一系列燈和線圈,它們可以選擇性地將反應器進料氣體暴露於EM輻射。E/MEE內的EMF源可以同時或依次或兩者的組合通電。One or more gases (e.g., 2, 3, 4, 5, or more gases) can optionally be passed through a gas manifold that includes a mass flow meter to produce a first gas composition (also referred to as a reactor feed gas ). The reactor feed gas can then bypass the electromagnetic (EM) embedded enclosure (E/MEE) or pass through one or more E/MEEs. E/MEE exposes the reactor feed gas to various electromagnetic field (EMF) sources. Flow rate, composition, and residence time can be controlled. The flow rate of the reactor feed gas can be between 0.01 standard liters per minute (SLPM) and 10 SLPM, or 100 SLPM or more. A constant gas flow maintains a clean environment within the reactor. The schematic diagram shown in Figure 1 depicts the gas flow path through the sample E/MEE. Sample E/MEE consists of a series of lamps and coils that selectively expose the reactor feed gas to EM radiation. The EMF sources within the E/MEE can be energized simultaneously or sequentially or a combination of both.

圖1是本發明的E/MEE的圖示。氣體通過管線102中的進氣口101(或入口)進入E/MEE,並在出氣口110(或出口)處排出。進氣口101和出氣口110可任選地具有閥。Figure 1 is a diagram of the E/MEE of the present invention. Gas enters the E/MEE through gas inlet 101 (or inlet) in line 102 and exits at gas outlet 110 (or outlet). The air inlet 101 and the air outlet 110 may optionally have valves.

管線102可由透明或半透明材料(較佳玻璃)和/或不透明或非半透明材料製成,例如不銹鋼或非半透明塑料(例如由Saint-Globain Performance Plastics製造的TYGON ®)或其組合。當氣體駐留在管線內時,使用不透明材料可以減少或消除對氣體的電磁暴露。管線102的長度可以在50 cm和5 meters之間或更長。管線102的內徑可以在2 mm和25 cm之間或更大。管線102可以用一個或多個支撐件112支撐在外殼或基板111上和/或封閉在外殼或基板111內,例如一個或多個板。例如,基板111可以被配置為平面或底板、管道或盒子。在基板是盒子的情況下,盒子的特徵可以是底板、天花板和側壁。 該盒子可以關閉和/或隔離環境EM輻射,例如環境光。 Line 102 may be made of a transparent or translucent material (preferably glass) and/or an opaque or non-translucent material such as stainless steel or non-translucent plastic such as TYGON ® manufactured by Saint-Globain Performance Plastics, or combinations thereof. When the gas resides in the line, the use of opaque materials can reduce or eliminate electromagnetic exposure to the gas. The length of line 102 may be between 50 cm and 5 meters or longer. The inner diameter of the line 102 may be between 2 mm and 25 cm or greater. The pipeline 102 may be supported on and/or enclosed within an enclosure or substrate 111 with one or more supports 112, such as one or more plates. For example, the substrate 111 may be configured as a plane or floor, a pipe or a box. Where the substrate is a box, the box may feature a floor, ceiling and side walls. The box can shut off and/or isolate ambient EM radiation, such as ambient light.

在E/MEE內可以配置一個或多個燈(例如2、3、4、5、6、7、8、9、10個燈或更多)。燈(單獨編號)較佳地是筆形燈,其特徵在於具有縱軸的細長管。筆形燈可以獨立放置,使其縱軸(i)平行於管線102、(ii)徑向設置在相對於管線102的垂直平面中、或(iii)垂直於沿管線102的縱軸或沿管線102的垂直軸創建的平面。One or more lamps (eg 2, 3, 4, 5, 6, 7, 8, 9, 10 lamps or more) can be configured within the E/MEE. The lamp (separately numbered) is preferably a pen lamp, characterized by an elongated tube having a longitudinal axis. The penlight can be positioned independently with its longitudinal axis (i) parallel to the line 102, (ii) radially disposed in a vertical plane relative to the line 102, or (iii) perpendicular to the longitudinal axis along the line 102 or along the line 102 The plane created by the vertical axis of .

每個燈可以獨立地藉由支撐件112固定在其方向上。每個燈可以獨立地固定到樞軸113以允許從第一位置旋轉。例如,燈可以相對於第一位置在大約0度和360度之間旋轉,例如大約45度、90度、135度、180度、225度、或 70度,較佳地大約90度。旋轉可以相對於x、y、和/或z軸,其中(i)x軸定義為平行於氣體管線及其垂直平面的軸,(ii)y軸定義垂直於氣體管線並平行於其水平面的軸,並且(iii)z軸定義為垂直於氣體管線並平行於其垂直平面的軸。Each lamp can be independently fixed in its direction by the support 112 . Each light can be independently secured to pivot 113 to allow rotation from the first position. For example, the light may rotate between about 0 degrees and 360 degrees relative to the first position, such as about 45 degrees, 90 degrees, 135 degrees, 180 degrees, 225 degrees, or 70 degrees, preferably about 90 degrees. Rotation can be relative to the x, y, and/or z axes, where (i) the x-axis defines the axis parallel to the gas line and its vertical plane, and (ii) the y-axis defines the axis perpendicular to the gas line and parallel to its horizontal plane , and (iii) the z-axis is defined as the axis perpendicular to the gas line and parallel to its vertical plane.

參考E/MEE內的特定筆形燈,管線102沿E/MEE配置,氣體從進氣口101流出並在出氣口110排出。燈103為一種氖燈,最先顯示在管線102上方,定向為沿z軸並垂直於管線102,燈頭指向管線102。燈109為一種氪燈,顯示在管線102下方,定向為平行於x軸,燈頭指向出氣口110。燈104和105分別是長波燈和短波燈,顯示為平行於管線102,定向為沿x軸,燈頭指向進氣口101。燈122為一種氬燈,顯示在管線102下方,定向為平行於x軸,燈頭指向進氣口101,與燈104和105的距離大致相同。燈106為一種氖燈,大約在E/MEE的中點處下游,在管線102上方,燈頭端朝下。燈107為一種氙燈,顯示在管線102上方的燈106的下游,平行於管線102的x軸並指向出氣口110。燈108為一種氬燈,在管線102下方,並且燈頭沿z軸指向管線102。可選的線圈120纏繞管線102。這些燈中的每一個都可以獨立地旋轉,例如,沿著任何軸旋轉90 o。每個燈都連接到供電設備或電源以打開或關閉電源。在製程中,每個燈都可以獨立旋轉1、2、3、4次或更多次。為方便起見,每個燈都由一個樞軸固定,該樞軸可由中央處理單元控制,例如被編程為旋轉樞軸並向每個燈供電的計算機。為了便於描述實驗過程,將每個燈的每個方向稱為「位置n」,其中n為0、1、2、3、4或更大。隨著製程的進行,每個燈可以在特定的安培數下通電特定的時間段並定位或重新定位。 With reference to a particular penlight within the E/MEE, line 102 is disposed along the E/MEE with gas flowing from inlet 101 and exhaust at outlet 110 . Lamp 103 is a neon lamp, first shown above line 102 , oriented along the z-axis and perpendicular to line 102 with the lamp head pointing towards line 102 . Lamp 109 , a krypton lamp, is shown below line 102 , oriented parallel to the x-axis with the lamp head pointing toward gas outlet 110 . Lamps 104 and 105 are long-wave and short-wave lamps, respectively, shown parallel to line 102 , oriented along the x-axis, with lamp heads pointing toward gas inlet 101 . Lamp 122 , an argon lamp, is shown below line 102 , oriented parallel to the x-axis with the lamp head pointing toward gas inlet 101 at approximately the same distance from lamps 104 and 105 . Lamp 106 is a neon lamp approximately mid-point downstream of the E/MEE, above line 102, capped end down. Lamp 107 , a xenon lamp, is shown downstream of lamp 106 above line 102 , parallel to the x-axis of line 102 and directed toward gas outlet 110 . Lamp 108 is an argon lamp positioned below line 102 with a lamp head pointing towards line 102 along the z-axis. An optional coil 120 is wound around the pipeline 102 . Each of these lights can be rotated independently, for example, 90o along any axis. Each light is connected to a powered device or power source to turn the power on or off. Each lamp can be independently rotated 1, 2, 3, 4 or more times during the process. For convenience, each light is held by a pivot that can be controlled by a central processing unit, such as a computer programmed to rotate the pivot and power each light. For the convenience of describing the experimental process, each direction of each lamp is referred to as "position n", where n is 0, 1, 2, 3, 4 or more. Each lamp can be energized at a specific amperage for a specific period of time and positioned or repositioned as the process progresses.

在下面描述的示例中,每個燈的初始燈泡位置用度數來描述。 當沿預期氣流方向向下看燃氣管道時(例如,在查看E/MEE出口時),將0 o參考點作為玻璃管上的12點鐘位置。玻璃管或管線的長度被視為光學長度(例如,在本例中為39英寸)。例如,距離末端6英寸定義為距離管道的光學端6英寸。 In the example described below, the initial bulb position for each lamp is described in degrees. When looking down the gas line in the direction of expected airflow (for example, when looking at an E/MEE outlet), use the 0 o reference point as the 12 o'clock position on the glass tube. The length of the glass tube or tubing is considered the optical length (eg, 39 inches in this example). For example, 6 inches from the end is defined as 6 inches from the optical end of the pipe.

燈可以放置在例如管線102的上方、下方、或側面(例如,與縱向軸線齊平或與縱向軸線平行(上方或下方)的平面)。燈可以獨立放置從燈的頭端到管線102的中心在垂直平面中距離管線102的中心5到100 cm之間。一個或多個燈可以沿著管線102放置在同一垂直平面中,如圖所示由燈122、104、和105組成。如果兩個燈(由燈的頭端或底部限定)距進氣口101的距離相同,則兩個燈位於同一垂直平面中。較佳地,燈105可以放置在多個在E/MEE內沿管線102的長度的多個(例如,2、3、4、5、或更多)垂直平面。此外,如燈104和105所示,可以將一個或多個燈放置在管線102上方、下方或穿過管線102中的同一水平面上。如果兩個燈(由燈的頭端或底部限定)與管線102中心的距離相同,則兩個燈位於同一水平平面中。較佳地,燈可以放置在E/MEE內沿管線102的長度的多個(例如,2、3、4、5個、或更多個)水平平面中,一般來說,如圖所示。The lamps may be placed, for example, above, below, or to the side of the line 102 (eg, a plane that is flush with or parallel to (above or below) the longitudinal axis). The lamp can be independently placed between 5 and 100 cm from the center of the line 102 in a vertical plane from the tip of the lamp to the center of the line 102 . One or more lamps may be placed in the same vertical plane along the pipeline 102, consisting of lamps 122, 104, and 105 as shown. Two lamps are located in the same vertical plane if they are at the same distance from the air inlet 101 (defined by the head or bottom of the lamp). Preferably, lamps 105 may be placed in multiple (eg, 2, 3, 4, 5, or more) vertical planes within the E/MEE along the length of pipeline 102 . Additionally, one or more lights may be placed above, below, or across line 102 at the same level as shown by lights 104 and 105 . Two lamps are located in the same horizontal plane if they are the same distance from the center of the line 102 (defined by the head or base of the lamp). Preferably, lights may be placed in multiple (eg, 2, 3, 4, 5, or more) horizontal planes within the E/MEE along the length of pipeline 102, generally as shown.

可以理解,如本文所用,「筆形燈」是充滿氣體或蒸汽的燈,其在蒸汽激發時發射特定的校準波長。例如,筆形燈包括氬燈、氖燈、氙燈、和汞燈。例如,一個或多個燈可以選自氬、氖、氙或汞或其組合。較佳地,從氬、氖、氙、和汞中的每一種中選擇至少一種燈。可以選擇150 nm和1000 nm之間的波長。筆形燈的一個示例是一種燈,其特徵在於具有頭端和底部的細長管。It will be understood that, as used herein, a "pen light" is a gas or vapor filled lamp that emits a specific calibrated wavelength when excited by the vapor. For example, pencil lamps include argon lamps, neon lamps, xenon lamps, and mercury lamps. For example, one or more lamps may be selected from argon, neon, xenon or mercury or combinations thereof. Preferably, at least one lamp is selected from each of argon, neon, xenon, and mercury. Wavelengths between 150 nm and 1000 nm can be selected. An example of a penlight is a lamp characterized by an elongated tube having a head end and a base.

也可以使用長波和/或短波紫外線燈。E/MEE中使用的筆形燈是從VWR™ 購買的,名稱為UVP Pen_Ray ®稀有氣體燈,或者在UV短波燈的情況下是Analytik Jena。 Long-wave and/or short-wave UV lamps may also be used. The pen lamps used in the E/MEE were purchased from VWR™ under the name UVP Pen_Ray ® Rare Gas Lamp, or Analytik Jena in the case of UV shortwave lamps.

供電設備可操作地獨立地連接到每個燈、E/MEE線圈和頻率發生器。供電設備可以是交流電和/或直流電。A power supply is operatively and independently connected to each lamp, E/MEE coil and frequency generator. The power supply can be AC and/or DC.

E/MEE可以是開放式或封閉式的。在E/MEE被封閉的地方,該外殼通常是不透明的並且保護氣體免受環境光的影響。外殼可以由塑料或樹脂或金屬製成。它可以是矩形或圓柱形。較佳地,外殼的特徵在於底板支撐。E/MEE can be open or closed. Where the E/MEE is enclosed, the enclosure is usually opaque and protects the gas from ambient light. The housing can be made of plastic or resin or metal. It can be rectangular or cylindrical. Preferably, the enclosure features a floor support.

在基準實驗中,進料氣體可以繞過E/MEE部分並直接送入反應器組件。EM源提供的能階和頻率可以變化。In benchmark experiments, the feed gas could bypass the E/MEE section and be fed directly to the reactor assembly. The energy levels and frequencies provided by the EM source can vary.

圖4A提供了本發明的E/MEE的第二說明。氣體在進氣口401進入E/MEE,並在出氣口409 沿管線410離開。筆形燈402和筆形燈403顯示為沿通過管線410軸的垂直平面平行於管線410並在管線410上方。筆形燈404和405在與通過線410的垂直平面等距的同一水平面中平行於管線410並在其下方。筆形燈406顯示為沿z軸定位在管線410上方且垂直於管線410。可選的線圈407是纏繞管線410的導電線圈。筆形燈408顯示為沿z軸在管線410下方並且垂直於管線410。基板411為支撐件412提供底座。樞軸413控制每個筆形燈的位置並允許沿x軸、y軸和z軸旋轉。可選的X射線源429也被示為指向線圈407。Figure 4A provides a second illustration of the E/MEE of the present invention. Gas enters the E/MEE at gas inlet 401 and exits along line 410 at gas outlet 409 . Penlight 402 and penlight 403 are shown parallel to and above line 410 along a vertical plane passing through the axis of line 410 . Penlights 404 and 405 are parallel to and below line 410 in the same horizontal plane equidistant from the vertical plane passing line 410 . Penlight 406 is shown positioned above and perpendicular to line 410 along the z-axis. Optional coil 407 is a conductive coil wrapped around tubing 410 . Penlight 408 is shown below line 410 along the z-axis and perpendicular to line 410 . The base plate 411 provides a base for the support 412 . Pivot 413 controls the position of each penlight and allows rotation along the x-, y- and z-axes. An optional X-ray source 429 is also shown directed at the coil 407 .

線圈407較佳地由導電材料製成並且連接到電源並且可選地連接到頻率發生器。線圈可以包括銅、鋁、鉑、銀、銠、鈀或其他金屬或合金(包括編織物、鍍層和塗層),並且可以可選地覆蓋有絕緣塗層,例如glyptal。使用1、2、3或更多金屬線的編織物可能是有利的。線圈可以由通常用於感應線圈的線材製成,並且可以改變尺寸和匝數。例如,線圈可以包括3、4、5、6、7、8、9、10或更多匝。線圈的內徑可以在2 cm和6 cm之間或更大,並且較佳緊貼管線410。使用的線圈可以具有5 mm和2 cm之間的直徑。Coil 407 is preferably made of conductive material and is connected to a power source and optionally to a frequency generator. Coils may comprise copper, aluminum, platinum, silver, rhodium, palladium or other metals or alloys (including braids, plating and coatings) and may optionally be covered with an insulating coating such as glyptal. It may be advantageous to use a braid of 1, 2, 3 or more wires. Coils can be made from the wire normally used for induction coils and can vary in size and number of turns. For example, a coil may include 3, 4, 5, 6, 7, 8, 9, 10 or more turns. The inner diameter of the coil may be between 2 cm and 6 cm or larger and preferably fits snugly against the line 410 . The coils used may have a diameter between 5 mm and 2 cm.

X射線源429可以包括在E/MEE中。例如,可以沿著入口401和出口409之間的線將X射線源429引導到管線410。例如,如果有的話,將X射線源429引導到線圈407處可能是有利的。X-ray source 429 may be included in the E/MEE. For example, X-ray source 429 may be directed to line 410 along a line between inlet 401 and outlet 409 . For example, it may be advantageous to direct the X-ray source 429 at the coil 407, if present.

反應器組件 (RA):Reactor Assembly (RA):

本發明還涉及一種反應器組件,包括: 一氣體入口和一或多個氣體出口; 一反應器室,較佳包含奈米多孔碳材料或粉末; 一第一多孔玻璃料,限定該反應器室的底板, 一第二多孔玻璃料,限定該反應器室的頂部;其中每個多孔玻璃料的孔隙率足以允許氣體滲透到該反應器室中,並包含奈米多孔碳材料; 一可選的反應器杯,限定該反應器室的側壁; 一可選的反應器蓋,設置在該第二多孔玻璃料上方; 一反應器主體,設置在該第一多孔玻璃料下方; 一反應器頂部空間,設置在該反應器蓋上方; 一可選的箔,設置在該反應器室和該反應器杯之間; 一個或多個線圈,圍繞該反應器主體和/或該反應器室且可操作地連接到一供電設備和/或頻率發生器; 一可選的 X 射線源,配置為將該反應器頂部空間暴露於X射線; 一或多個可選的雷射,配置為將雷射引向玻璃料和/或穿過該反應器室; 一計算機處理單元,配置為控制供電設備、頻率發生器、燈、雷射和X射線源(如果有的話)。 本發明還包括一種反應器組件,包括: 一氣體進氣口和一或多個氣體出氣口; 一反應器室,較佳包含奈米多孔碳材料; 一第一多孔玻璃料,限定該反應器室的底板, 一第二多孔玻璃料,限定該反應器室的頂部;其中每個多孔玻璃料的孔隙率足以允許氣體滲透到該反應器室中,並包含奈米多孔碳材料; 一反應器頂部空間,設置在反應器蓋上方; 2、3、4、5、或更多個RA線圈,圍繞反應器室和/或反應器頂部空間,且可操作地連接到RA頻率發生器和供電設備; 2、3、4、5、或更多對燈,其中該些燈對圍繞該RA線圈周向設置並且限定該些燈對和該RA線圈之間的空間; 一可選的X射線源,配置為將該反應器室暴露於X射線; 一或多個可選的雷射,配置為引導激光穿過該反應器室;和 一計算機處理單元,配置為控制該供電設備、頻率發生器和可選的X射線源和雷射。 本發明還包括一種反應器組件,包括: 一氣體進氣口和一或多個氣體出氣口; 一反應器室,較佳包含奈米多孔碳材料; 一第一多孔玻璃料,限定該反應器室的底板, 一第二多孔玻璃料,限定該反應器室的頂部;其中每個多孔玻璃料的孔隙率足以允許氣體滲透到該反應器室中,並包含奈米多孔碳材料; 一反應器頂部空間,設置在該反應器室上方; 一感應線圈,圍繞該反應器室和/或該反應器頂部空間,且可操作地連接到供電設備; 一計算機處理單元,配置為該控制供電設備。該反應器室可以可選地包含蓋和/或杯以容納碳材料。 The invention also relates to a reactor assembly comprising: a gas inlet and one or more gas outlets; a reactor chamber, preferably containing nanoporous carbon material or powder; a first porous frit defining the floor of the reactor chamber, a second porous frit defining the top of the reactor chamber; wherein each porous frit has a porosity sufficient to allow gas to permeate into the reactor chamber and comprises a nanoporous carbon material; an optional reactor cup defining the side walls of the reactor chamber; an optional reactor cover disposed over the second frit; a reactor main body disposed below the first porous frit; a reactor headspace disposed above the reactor head; an optional foil disposed between the reactor chamber and the reactor cup; one or more coils surrounding the reactor body and/or the reactor chamber and operatively connected to a power supply and/or frequency generator; an optional X-ray source configured to expose the reactor headspace to X-rays; one or more optional lasers configured to direct lasers toward the frit and/or through the reactor chamber; A computer processing unit configured to control the power supply, frequency generator, lamp, laser and x-ray source (if present). The invention also includes a reactor assembly comprising: a gas inlet and one or more gas outlets; a reactor chamber, preferably comprising nanoporous carbon material; a first porous frit defining the floor of the reactor chamber, a second porous frit defining the top of the reactor chamber; wherein each porous frit has a porosity sufficient to allow gas to permeate into the reactor chamber and comprises a nanoporous carbon material; a reactor headspace disposed above the reactor lid; 2, 3, 4, 5, or more RA coils surrounding the reactor chamber and/or reactor headspace and operably connected to the RA frequency generator and power supply; 2, 3, 4, 5, or more pairs of lamps, wherein the pairs of lamps are disposed circumferentially around the RA coil and define a space between the pairs of lamps and the RA coil; an optional x-ray source configured to expose the reactor chamber to x-rays; one or more optional lasers configured to direct laser light through the reactor chamber; and A computer processing unit configured to control the power supply, frequency generator and optional x-ray source and laser. The invention also includes a reactor assembly comprising: a gas inlet and one or more gas outlets; a reactor chamber, preferably comprising nanoporous carbon material; a first porous frit defining the floor of the reactor chamber, a second porous frit defining the top of the reactor chamber; wherein each porous frit has a porosity sufficient to allow gas to permeate into the reactor chamber and comprises a nanoporous carbon material; a reactor headspace disposed above the reactor chamber; an induction coil surrounding the reactor chamber and/or the reactor headspace and operatively connected to a power supply; A computer processing unit configured to control the power supply device. The reactor chamber may optionally contain a lid and/or cup to contain the carbon material.

如圖2A和圖2B所示,反應器組件包括反應器主體202和起始或裝料材料204(其通常是奈米多孔碳粉末),並且位於氣體源221和E/MEE 222的下游(如圖2A所示)。如上所述,反應器進料氣體可以繞過E/MEE。反應器主體202可以是由一個或多個導電線圈208圍繞的填充床管式微反應器(如圖2所示,反應器組件的橫截面)。As shown in Figures 2A and 2B, the reactor assembly includes a reactor body 202 and a starting or charge material 204 (which is typically a nanoporous carbon powder), and is located downstream of a gas source 221 and an E/MEE 222 ( as shown in Figure 2A). As mentioned above, the reactor feed gas can bypass the E/MEE. Reactor body 202 may be a packed bed tubular microreactor surrounded by one or more conductive coils 208 (shown in FIG. 2 , cross-section of the reactor assembly).

導電線圈208可以由導電材料製成,例如銅、鋁、鉑、銀、銠、鈀或其他金屬或合金(包括編織物、鍍層和塗層),並且可以可選地覆蓋有絕緣塗層,例如glyptal。線圈可以由通常用於感應線圈的線材製成,並且可以改變尺寸和匝數。例如,線圈可以包括3、4、5、6、7、8、9、10、或更多匝。線圈的內徑可以在2 cm和6 cm之間或更大,並且較佳地與反應器主體封閉端管207緊密配合。所使用的線材可以具有5 mm和2 cm之間的直徑。The conductive coil 208 may be made of a conductive material such as copper, aluminum, platinum, silver, rhodium, palladium or other metals or alloys (including braids, plating and coatings), and may optionally be covered with an insulating coating such as glyptal. Coils can be made from the wire normally used for induction coils and can vary in size and number of turns. For example, a coil may include 3, 4, 5, 6, 7, 8, 9, 10, or more turns. The inner diameter of the coil may be between 2 cm and 6 cm or greater and preferably fits snugly with the reactor body closed end tube 207 . The wire used may have a diameter between 5 mm and 2 cm.

每個導電線圈208(或線圈)可以產生感應熱並且可選地產生磁場。標準感應線圈或反向磁場感應線圈(具有通過延伸臂連接的下部和上部的線圈,允許這些部分以相反方向纏繞,從而產生相反的磁場)是較佳的。導電線圈208可以通過熱交換器進行水冷。導電線圈208可以連接到電源法蘭210,該電源法蘭210也可以水冷,進而可以連接到供電設備,例如Ambrell 10kW 150-400kHz供電設備。在基準實驗中,標準線圈與簡單的銅繞線一起使用。繞線可以形成線圈,使得與供電設備的連接在線圈的相對端(如圖5A所示),或者線圈可以返回使得與供電設備的連接是相鄰的(如圖5B所示)。Each conductive coil 208 (or coils) can generate inductive heat and optionally a magnetic field. Standard induction coils or reverse field induction coils (having lower and upper coils connected by extension arms, allowing the parts to be wound in opposite directions, thus producing opposite magnetic fields) are preferred. The conductive coil 208 may be water cooled by a heat exchanger. The conductive coil 208 may be connected to a power supply flange 210, which may also be water cooled, and in turn may be connected to a power supply, such as an Ambrell 10kW 150-400kHz power supply. In benchmark experiments, standard coils were used with simple copper windings. The wire can be wound to form a coil such that the connection to the power supply is at the opposite end of the coil (as shown in FIG. 5A ), or the coil can be returned so that the connection to the power supply is adjacent (as shown in FIG. 5B ).

反應器組件可以可選地進一步包括一個或多個導電線圈208,較佳地圍繞反應器主體202及其容納系統。例如,反應器組件可以包括1、2、3、4、5、6、7、8、9或10個或更多個線圈(也稱為RA線圈)。如圖2B所示,一個或多個電磁(E/M)線圈可用於提供磁場。較佳地,可以使用1、2、3、4或5個或更多個E/M線圈,更佳3、4、或5個E/M線圈。圖3示出了例如三個線圈組,它們通常可以從上到下編號為1、2、或3。一組線圈(如圖3A-3E所示)可以稱為邊界。在使用多組的情況下,使用的線圈數量是獨立選擇的。此外,多組可以沿等距間隔或不規則間隔。The reactor assembly may optionally further include one or more conductive coils 208, preferably surrounding the reactor body 202 and its containment system. For example, a reactor assembly may include 1, 2, 3, 4, 5, 6, 7, 8, 9, or 10 or more coils (also referred to as RA coils). As shown in Figure 2B, one or more electromagnetic (E/M) coils may be used to provide the magnetic field. Preferably, 1, 2, 3, 4 or 5 or more E/M coils may be used, more preferably 3, 4, or 5 E/M coils. Figure 3 shows, for example, three coil sets, which may generally be numbered 1, 2, or 3 from top to bottom. A set of coils (as shown in Figures 3A-3E) may be referred to as a boundary. Where multiple groups are used, the number of coils used is independently selected. In addition, groups can be equally spaced or irregularly spaced.

線圈可以由導電材料製成,例如銅、鉑、銀、銠、鈀和兩種或多種材料的編織線或塗層線。一個組中的每個線圈可以由相同或不同的材料製成。例如,可以進行分組,使得每個線圈由不同的材料製成。例如,可以使用銅線和銀線的編織物。可以使用鍍銀銅線。第一RA線圈可以由銅繞線製成。第二RA線圈可以是銅/銀編織物。第三RA線圈可以是鉑線繞線。RA線圈可以被配置為產生磁場,並且其中每個供電設備獨立地提供AC和/或DC電流。任何一個或所有RA線圈都可以選擇塗漆。Coils can be made of conductive materials such as copper, platinum, silver, rhodium, palladium, and braided or coated wire of two or more materials. Each coil in a group can be made of the same or different material. For example, grouping can be done such that each coil is made of a different material. For example, a braid of copper and silver wires may be used. Silver-plated copper wire may be used. The first RA coil may be made of copper windings. The second RA coil may be a copper/silver braid. The third RA coil may be a platinum wire wound. The RA coils may be configured to generate a magnetic field, and wherein each power supply independently provides AC and/or DC current. Any or all RA coils can be optionally painted.

線圈的幾何形狀較佳為圓形。然而,也可以使用其他幾何形狀,例如圓形、橢圓形、和卵形。線材直徑可以在約0.05 mm(>約40線規)和約15 mm(約0000線規)之間或更大。例如,線材直徑可以在大約0.08 mm(約40線規)和大約0.8毫米(約20線規)之間。使用0.13 mm(36線規)的線材獲得了出色的結果。線圈可以是繞線(例如,電線可以繞成1、2、3、4、5、6、7、8、9、20 匝、或更多匝),或可以是單匝。當線圈由單繞線時,線材的直徑或寬度可以較佳為10 mm或更大的直徑。在這種情況下,「線材」也可以被認為是材料寬度大於深度的帶。圖3提供了各種線圈和線圈組的圖示或視圖。線圈可以由單根線、線合金或兩根或多根線製成。例如,可以將包含不同金屬的兩根線纏繞或編織在一起。The geometry of the coil is preferably circular. However, other geometric shapes such as circles, ellipses, and ovals may also be used. The wire diameter may be between about 0.05 mm (>about 40 gauge) and about 15 mm (about 0000 gauge) or greater. For example, the wire diameter may be between about 0.08 mm (about 40 gauge) and about 0.8 mm (about 20 gauge). Excellent results were obtained with 0.13 mm (36 gauge) wire. The coil may be a wound wire (eg, the wire may be wound in 1, 2, 3, 4, 5, 6, 7, 8, 9, 20, or more turns), or may be a single turn. When the coil is wound by a single wire, the diameter or width of the wire may preferably be 10 mm or more in diameter. In this context, a "wire" can also be thought of as a strip in which the width of the material is greater than the depth. Figure 3 provides illustrations or views of various coils and coil sets. Coils can be made from a single wire, a wire alloy, or two or more wires. For example, two wires containing different metals can be twisted or braided together.

每個線圈的內徑(或線圈不是圓形的尺寸)可以相同或不同,並且可以在2到200cm之間。The inner diameter of each coil (or the dimension the coils are not round) can be the same or different and can be between 2 and 200cm.

導電線圈208可以獨立地連接到一個或多個供電設備,例如AC或DC供電設備或其組合。例如,可以將AC電流提供給交替(例如,1、3、和5)或相鄰線圈(例如,1、2、和/或4、5),而將DC電流提供給其餘線圈。電流可以(獨立地)以一定頻率提供,例如以圖案化頻率,例如三角形、正方形或正弦圖案或其組合。提供給每個線圈的頻率可以相同或不同,介於0至50 MHz或更高之間。雖然導電線圈208可以產生熱能或熱量並將其傳遞到反應器進料氣體,但它們主要用於產生磁場。Conductive coil 208 may be independently connected to one or more power supplies, such as AC or DC power supplies or a combination thereof. For example, AC current may be provided to alternate (eg, 1, 3, and 5) or adjacent coils (eg, 1, 2, and/or 4, 5), while DC current is provided to the remaining coils. The current may (independently) be provided at a frequency, for example in a patterned frequency, eg a triangular, square or sinusoidal pattern or a combination thereof. The frequency supplied to each coil can be the same or different, between 0 and 50 MHz or higher. While the conductive coils 208 can generate thermal energy or heat and transfer it to the reactor feed gas, they are primarily used to generate a magnetic field.

供電設備可以是AC和/或DC供電設備或其組合。電流可以(獨立地)以一定頻率提供,例如以圖案化頻率,例如三角形、正方形或正弦圖案或其組合。提供給每個線圈的頻率可以相同或不同,並且在0到50 MHz或更高之間,例如在1 Hz到50 Mhz之間。The power supply may be an AC and/or DC power supply or a combination thereof. The current may (independently) be provided at a frequency, for example in a patterned frequency, eg a triangular, square or sinusoidal pattern or a combination thereof. The frequency supplied to each coil may be the same or different and be between 0 and 50 MHz or higher, for example between 1 Hz and 50 Mhz.

如上所述,RA線圈通常圍繞反應器室和/或反應器頂部空間。例如,第一RA線圈可以與第一(或底部)玻璃料對齊。第二RA線圈可以與反應器室或奈米多孔碳床對齊。第三RA線圈可以與第二(或頂部)玻璃料對齊。如果有的話,第四RA線圈可以設置在第一RA線圈和第二RA線圈之間。如果有的話,第五RA線圈可以設置在第二RA線圈和第三RA線圈之間。當有兩個或更多個反應器室或奈米多孔碳床時,可能需要添加額外的RA線圈,也與第二或額外的反應器室或奈米多孔碳床對齊。可以添加額外的RA線圈,以便在存在時與額外的玻璃料對齊。As mentioned above, the RA coil typically surrounds the reactor chamber and/or reactor headspace. For example, a first RA coil may be aligned with a first (or bottom) frit. A second RA coil can be aligned with the reactor chamber or nanoporous carbon bed. A third RA coil can be aligned with the second (or top) frit. If present, a fourth RA coil may be disposed between the first RA coil and the second RA coil. If present, the fifth RA coil may be disposed between the second RA coil and the third RA coil. When there are two or more reactor chambers or nanoporous carbon beds, it may be necessary to add additional RA coils, also aligned with the second or additional reactor chambers or nanoporous carbon beds. Additional RA coils can be added to align with additional frit if present.

RA線圈通常可以支撐在支撐件或定子中以保持每個線圈之間的固定距離。如果有的話,支撐件可以是透明的。在一個實施例中,RA線圈可以配置在可以移除或移動的筒中。RA coils can typically be supported in supports or stators to maintain a fixed distance between each coil. The support, if present, can be transparent. In one embodiment, the RA coil can be configured in a cartridge that can be removed or moved.

RA線圈可以附加地或替代地與反應器頂部空間對齊。反應器頂部空間通常可以是第二或頂部玻璃料上方的體積。可以理解,在反應器組件水平放置(或以不同於垂直的某個角度)放置的情況下,儘管是旋轉的,空間的幾何形狀保持不變。反應器頂部空間通常可以是封閉的體積。例如,反應器組件可以插入封閉端透明(例如玻璃)管、小瓶或瓶子中。反應器組件可以與RA線圈(或邊界)可移動地接合,從而允許每個RA線圈與反應器組件內的不同元件對齊。例如,第一RA線圈可以與反應器室重新對齊。The RA coil may additionally or alternatively be aligned with the reactor headspace. Reactor headspace may typically be the volume above the second or top frit. It will be appreciated that where the reactor assembly is positioned horizontally (or at some angle other than vertical), the geometry of the space remains unchanged despite rotation. The reactor headspace may generally be a closed volume. For example, the reactor assembly can be inserted into a closed-ended clear (eg, glass) tube, vial, or bottle. The reactor assembly can be movably engaged with the RA coils (or borders), allowing each RA coil to be aligned with a different element within the reactor assembly. For example, the first RA coil can be realigned with the reactor chamber.

反應器主體202也可以是填充床、移動床或流化床或以一個或多個腔室為特徵的其他配置,該腔室接收裝料材料 204並促進反應器進料氣體通過裝料材料204的轉移並且可以轉移熱能和/或電磁能。反應器主體202通常包含在外殼內,例如封閉端管207和玻璃料203,其用於容納裝料材料04。使用半透明或透明殼的反應器可能是有利的,例如石英或其他具有高熔點特徵的材料。反應器床的體積可以是固定的或可調的。例如,反應器床可包含約1克或更少的起始材料,約1克至1千克或更多的起始材料。在反應器組件包括兩個或更多個反應器室的情況下,反應器室較佳地直接或間接堆疊,較佳地具有共同的中心軸並且可以由一個或兩個玻璃料隔開。Reactor body 202 may also be a packed bed, moving bed, or fluidized bed or other configuration featuring one or more chambers that receive charge material 204 and facilitate passage of reactor feed gas through charge material 204 and can transfer thermal and/or electromagnetic energy. The reactor body 202 is generally contained within an enclosure, such as a closed end tube 207 and a frit 203 , which is used to contain the charge material 04 . It may be advantageous to use a reactor with a translucent or transparent shell, such as quartz or other material characterized by a high melting point. The volume of the reactor bed can be fixed or adjustable. For example, the reactor bed may contain about 1 gram or less of starting material, about 1 gram to 1 kilogram or more of starting material. Where the reactor assembly comprises two or more reactor chambers, the reactor chambers are preferably stacked directly or indirectly, preferably have a common central axis and may be separated by one or two frits.

反應器主體202可由導熱材料製成,例如石墨、銅、鋁、鎳、鉬、鉑、銥、鈷、或鈮,或非導熱材料,例如石英、塑料(例如,丙烯酸)、或其組合。可選的用蓋205蓋住的杯206可能是有利的。杯和蓋的材質可獨立選擇。例如,以下實例擇用石墨杯可以與石墨蓋組合。銅杯可以與石墨蓋結合使用。石墨杯可以與銅蓋結合使用。銅杯可以與銅帽等組合。Reactor body 202 may be made of a thermally conductive material such as graphite, copper, aluminum, nickel, molybdenum, platinum, iridium, cobalt, or niobium, or a nonthermally conductive material such as quartz, plastic (eg, acrylic), or combinations thereof. An optional cup 206 covered with a lid 205 may be advantageous. The material of the cup and lid can be selected independently. For example, the optional graphite cups in the examples below can be combined with graphite lids. Copper mugs can be combined with graphite lids. Graphite cups can be combined with copper lids. Copper mugs can be combined with copper hats and more.

反應器組件還可以通過入口或進氣口201接收氣體管線,並通過出口或出氣口209提供排氣,可選地由閥門控制。由封閉端管207限定的頂部空間可以配置在反應器主體202上方。反應器主體202較佳地由石墨、銅、或其他無機剛性材料製成。氣體管線較佳由惰性管材製成,例如玻璃、丙烯酸、聚氨酯、有機玻璃、矽樹脂、不銹鋼等也可以使用。可選地,管道可以是可撓的或剛性的、半透明的或不透明的。進氣口通常位於裝料材料下方。出氣口可以在下方、上方或兩者兼有。The reactor assembly may also receive a gas line through an inlet or gas inlet 201 and provide exhaust through an outlet or gas outlet 209, optionally controlled by a valve. A headspace defined by the closed-end tube 207 may be disposed above the reactor body 202 . Reactor body 202 is preferably made of graphite, copper, or other inorganic rigid material. The gas lines are preferably made of inert tubing such as glass, acrylic, polyurethane, plexiglass, silicone, stainless steel, etc. may also be used. Optionally, the tubing can be flexible or rigid, translucent or opaque. The air inlet is usually located below the charge material. The air outlet can be below, above or both.

還顯示了用於限定容納裝料材料的腔室的玻璃料203。玻璃料可由允許氣體流動的多孔材料製成。玻璃料較佳具有小於起始材料粒度的最大孔徑。可以使用2至50微米,較佳4至15微米的孔徑。玻璃料的厚度可以令人滿意地在1到10mm之間或更大。玻璃料較佳地由惰性材料製成,例如二氧化矽或石英。Technical Glass Products (Painesville Tp., Ohio) 的多孔玻璃料令人滿意。在以下實例中,孔徑為4至15微米、厚度為2-3微米的熔融石英#3多孔玻璃料(QPD10-3)和孔徑為14至40微米的熔融石英玻璃料(QPD10-3)被使用。本文例舉的玻璃料的純度非常高,為99.99%wt,以確保所得結果不會因污染而被忽略。也可以使用純度和質量較低的玻璃料。較佳地選擇多孔玻璃料的直徑以允許在反應器內部或杯內緊密配合。即,如果有的話,多孔玻璃料的直徑與反應器或杯的內徑大致相同。Also shown is a frit 203 used to define a chamber containing the charge material. The frit can be made of a porous material that allows gas flow. The glass frit preferably has a maximum pore size smaller than the particle size of the starting material. Pore sizes of 2 to 50 microns, preferably 4 to 15 microns may be used. The thickness of the frit may satisfactorily be between 1 and 10 mm or greater. The frit is preferably made of an inert material such as silicon dioxide or quartz. Porous frits from Technical Glass Products (Painesville Tp., Ohio) were satisfactory. In the following examples, fused silica #3 porous frit (QPD10-3) with a pore size of 4 to 15 microns and a thickness of 2-3 microns and a fused silica frit (QPD10-3) with a pore size of 14 to 40 microns were used . The glass frits exemplified here are of very high purity at 99.99%wt to ensure that the results obtained are not negligible due to contamination. Glass frits of lower purity and quality can also be used. The diameter of the porous frit is preferably chosen to allow a tight fit inside the reactor or cup. That is, the diameter of the porous frit is about the same as the inside diameter of the reactor or cup, if any.

如圖6A和6B所示,箔可以可選地在玻璃料和/或杯的內部和/或外部包圍包含裝料材料的腔室,從而形成圍繞起始材料的金屬邊界。箔可以是金屬,例如銅、鉑、鈮、鈷、金、銀、或其合金。箔也可以是石墨等。箔的厚度可以在0到0.5 cm之間,較佳為1-10 mm。反應器的輪廓可以是線性的,也可以配置為在下部玻璃料下方包含一個收縮部分,從而提供棒棒糖一般的外觀。還顯示了(氣體)管線102。As shown in Figures 6A and 6B, the foil may optionally surround the chamber containing the charge material inside and/or outside the frit and/or cup, thereby forming a metallic boundary around the starting material. The foil can be a metal such as copper, platinum, niobium, cobalt, gold, silver, or alloys thereof. The foil can also be graphite or the like. The thickness of the foil may be between 0 and 0.5 cm, preferably 1-10 mm. The reactor profile can be linear or configured to include a constriction below the lower frit, giving a lollipop-like appearance. A (gas) line 102 is also shown.

反應器室的尺寸被設計成包含期望量的裝料材料204。對於本文所述的實驗,反應器室被設計為包含20 mg至100 g之間的奈米多孔碳粉末。更大的反應器可以擴大規模。The size of the reactor chamber is designed to contain the desired amount of charge material 204 . For the experiments described here, the reactor chamber was designed to contain between 20 mg and 100 g of nanoporous carbon powder. Larger reactors can be scaled up.

反應器組件可以增加其他形式的電磁輻射,例如光。圖4B例示了光源426和427,其產生被引導通過反應器外殼415和包含在其中的起始材料的光。較佳的光源426和427可以是雷射和/或可以發射波長在10 nm和1 mm之間的光。光可選地經受一個或多個濾光器428,如圖4B中光源(光束)的使用所示。較佳地,反應器組件包括2、3、4、5、或更多對圍繞RA線圈周向設置的燈。較佳的筆形燈為例如在E/MEE中使用的燈,其從上述通過引用結合到本文中。多對燈較佳地限定圍繞線圈的邊界並且不接觸或以其他方式與線圈相鄰。兩個燈被認為是成對的,它們彼此接近,例如在與RA線圈的中心軸相同的平面內。成對的燈可以與RA線圈中心軸相互平行或正交。如果燈和底座之間的任意兩點之間的距離在10 cm以內,較佳在5 cm以內,則可以認為燈彼此接近。與RA線圈中心軸正交定位的燈通常沿著由一個或多個RA線圈的半徑限定的線定位。Reactor components can add other forms of electromagnetic radiation, such as light. Figure 4B illustrates light sources 426 and 427 that generate light that is directed through reactor enclosure 415 and the starting materials contained therein. Preferred light sources 426 and 427 may be lasers and/or may emit light with a wavelength between 10 nm and 1 mm. The light is optionally subjected to one or more filters 428, as shown by the use of light sources (beams) in Figure 4B. Preferably, the reactor assembly includes 2, 3, 4, 5, or more pairs of lamps arranged circumferentially around the RA coil. Preferred pen lights are eg those used in E/MEE, which is hereby incorporated by reference from above. The pairs of lights preferably define a boundary around the coil and do not touch or otherwise be adjacent to the coil. Two lamps are considered as a pair, which are close to each other, eg in the same plane as the central axis of the RA coil. The paired lamps can be parallel or perpendicular to the central axis of the RA coil. Lamps are considered to be close to each other if the distance between any two points between the lamp and the base is within 10 cm, preferably within 5 cm. Lamps positioned orthogonal to the central axis of the RA coils are typically positioned along a line defined by the radii of the one or more RA coils.

RA燈,例如靠近反應器主體的筆形燈,可以與一個或多個E/MEE燈匹配或配對,例如,位於E/MEE外殼內且靠近氣體管線的筆形燈。例如,在E/MEE筆形燈是氖燈的情況下,一對RA燈可以是氖筆形燈。這種匹配的燈可以發射以基本相同波長為特徵的光。這可以通過使用來自同一製造商的具有相同規格的燈來方便地實現。An RA lamp, such as a penlight close to the reactor body, can be matched or paired with one or more E/MEE lamps, such as a penlight located within the E/MEE enclosure and close to the gas lines. For example, where the E/MEE pencil lamps are neon lamps, the pair of RA lamps may be neon pencil lamps. Such matched lamps may emit light characterized by substantially the same wavelength. This can be conveniently achieved by using lamps from the same manufacturer with the same specifications.

反應器可以在封閉或開放的外殼415中,並且可以由反應器支撐件支撐在其中。反應器進料氣體被引導至反應器入口玻璃料或底部玻璃料,引導通過容納在外殼415內的起始材料並在反應器出口玻璃料或頂部玻璃料處離開反應器。然後可以將反應器進料氣體排出或再循環,可選地返回E/MEE進行進一步處理。The reactor can be in a closed or open enclosure 415 and can be supported therein by reactor supports. Reactor feed gas is directed to the reactor inlet frit or bottom frit, directed through the starting material contained within enclosure 415 and exits the reactor at the reactor outlet frit or top frit. The reactor feed gas can then be vented or recycled, optionally back to the E/MEE for further processing.

反應器還可包括X射線源211(圖2C)或424(圖4B)和/或一個或多個雷射212(圖2C)或426、和427(圖4B)。較佳的X射線源包括mini-x。X射線較佳地被引導通過反應器朝向裝料材料上方的氣體頂部空間或靶保持器213。X射線可以由源直接或間接提供,例如通過從設置在玻璃料上方或下方的箔反射X射線。The reactor may also include an X-ray source 211 (FIG. 2C) or 424 (FIG. 4B) and/or one or more lasers 212 (FIG. 2C) or 426, and 427 (FIG. 4B). Preferred X-ray sources include mini-x. X-rays are preferably directed through the reactor towards the gas headspace or target holder 213 above the charge material. X-rays may be provided directly or indirectly by the source, for example by reflecting X-rays from a foil arranged above or below the frit.

圖7A示出了較佳的反應器組件的俯視圖。筆形燈1501、筆形燈1502、和筆形燈1503被示出為使燈頭沿反應器組件的半徑朝向反應器組件的中心軸。筆形燈1504、筆形燈1505、和筆形燈1506被示為平行於反應器組件的中心軸定向並且設置在沿著反應器組件的半徑的平面中。筆形燈1501與筆形燈1504一起形成第一RA燈對。筆形燈1502與筆形燈1505一起形成第二RA燈對。筆形燈1503與筆形燈1506一起形成第三RA燈對。與E/MEE筆形燈一樣,每個RA燈都可以沿其x、y或z軸旋轉。如圖所示,每對可以可選擇地駐留在同一徑向平面內。外支撐件15109為筆形燈1501、1502、和1503提供支撐。內支撐件15110為筆形燈1504、1505、和1506提供支撐。外支撐件和內支撐件較佳地由非導電材料(例如聚合物或樹脂)製成並且較佳是透明的。示出了可選的X射線源1507,其將X射線導向反應器室1508的中心軸。還示出了反應器連接器15111。Figure 7A shows a top view of a preferred reactor assembly. Penlight 1501 , penlight 1502 , and penlight 1503 are shown with the lamp heads facing the central axis of the reactor assembly along the radius of the reactor assembly. Penlight 1504, penlight 1505, and penlight 1506 are shown oriented parallel to the central axis of the reactor assembly and disposed in a plane along the radius of the reactor assembly. Penlight 1501 and penlight 1504 together form a first RA lamp pair. Penlight 1502 forms a second RA lamp pair together with penlight 1505 . Penlight 1503 forms a third RA lamp pair together with penlight 1506 . Like the E/MEE penlight, each RA lamp can be rotated along its x, y or z axis. As shown, each pair may optionally reside in the same radial plane. Outer support 15109 provides support for penlights 1501 , 1502 , and 1503 . Inner support 15110 provides support for pen lights 1504 , 1505 , and 1506 . The outer and inner supports are preferably made of a non-conductive material such as a polymer or resin and are preferably transparent. An optional X-ray source 1507 is shown which directs X-rays towards the central axis of the reactor chamber 1508 . Reactor connector 15111 is also shown.

圖7B是該反應器組件的立體圖。筆形燈1509、筆形燈1510、和筆形燈1511被示為以燈頭沿反應器組件的半徑朝向反應器組件的中心軸定向。每個燈的燈頭與中心或第三個RA線圈1517 對齊,並在同一水平面上。筆形燈1512、筆形燈1513、和筆形燈1514被示為平行於反應器組件的中心軸定向,設置在沿反應器組件的半徑的平面中,並且其特徵在於指向反應器頂部的燈頭,遠離(氣體)進氣口1520。這些燈在水平筆形燈上方示出。每個筆形燈的長度與RA線圈1516、1517、和1518 對齊。外支撐件15109和內支撐件15110支撐筆形燈。可選的X 射線源1515 被示出將X射線導向第三個RA線圈1516上方的反應器組件的中心軸。設置在反應器組件內的可以是將X射線導向反應器室的反射板。還顯示了反應器連接器15111,以及其他非材料連接器和墊片。還顯示了(氣體)進氣口1520和(氣體)出氣口1519。Figure 7B is a perspective view of the reactor assembly. Penlight 1509, penlight 1510, and penlight 1511 are shown with the lamp heads oriented along the radius of the reactor assembly toward the central axis of the reactor assembly. The lamp head of each lamp is aligned with the center or third RA coil 1517 and on the same level. Penlight 1512, penlight 1513, and penlight 1514 are shown oriented parallel to the central axis of the reactor assembly, disposed in a plane along the radius of the reactor assembly, and characterized by a lamp head pointing toward the top of the reactor, away from ( gas) inlet port 1520. These lights are shown above the horizontal pen lights. The length of each penlight is aligned with RA coils 1516 , 1517 , and 1518 . The outer support 15109 and the inner support 15110 support the penlight. An optional X-ray source 1515 is shown directing X-rays toward the central axis of the reactor assembly above a third RA coil 1516 . Disposed within the reactor assembly may be a reflective plate that directs X-rays towards the reactor chamber. Reactor connector 15111 is also shown, along with other non-material connectors and spacers. A (gas) inlet 1520 and a (gas) outlet 1519 are also shown.

圖7C是反應器組件的第二立體圖。筆形燈1521、筆形燈1522、和筆形燈1523被示出為以燈頭沿指向反應器組件的半徑朝向反應器組件的中心軸定向。筆形燈1524、筆形燈1525、和筆形燈1526被示為平行於反應器組件的中心軸定向,設置在沿反應器組件的半徑的平面中,並且其特徵在於指向反應器底部的燈頭,朝向(氣體)進氣口1532。這些垂直燈顯示在水平燈的上方,同樣,每對燈可以可選地位於相同的徑向平面中。每個筆形燈的燈頭與第三個RA線圈1528對齊。外支撐件15109和內支撐件 15110支撐筆形燈。顯示了三個RA線圈1528、1529、和1530。可選的X射線源1527 被示出將X射線導向反應器組件的中心軸。設置在反應器組件內的可以是將X射線導向反應器室的反射板。還顯示了反應器連接器15111,以及其他非材料連接器和墊片。還顯示了(氣體)進氣口1532和(氣體)出氣口1531。Figure 7C is a second perspective view of the reactor assembly. Penlight 1521 , penlight 1522 , and penlight 1523 are shown with the lamp heads oriented toward the central axis of the reactor assembly along a radius directed toward the reactor assembly. Penlight 1524, penlight 1525, and penlight 1526 are shown oriented parallel to the central axis of the reactor assembly, disposed in a plane along the radius of the reactor assembly, and characterized by a lamp head pointing towards the bottom of the reactor, toward ( gas) inlet port 1532. These vertical lights are shown above the horizontal lights, again, each pair of lights may optionally lie in the same radial plane. The lamp head of each penlight is aligned with the third RA coil 1528 . Outer support 15109 and inner support 15110 support the penlight. Three RA coils 1528, 1529, and 1530 are shown. An optional X-ray source 1527 is shown directing X-rays toward the central axis of the reactor assembly. Disposed within the reactor assembly may be a reflective plate that directs X-rays towards the reactor chamber. Reactor connector 15111 is also shown, along with other non-material connectors and spacers. A (gas) inlet 1532 and a (gas) outlet 1531 are also shown.

圖7D是去除了筆形燈和X射線源的反應器組件的橫截面側視圖。氣體在進氣口1541進入並在出氣口1540排出。顯示了RA線圈1537、1538、和1539。第一(或底部)玻璃料1535和第二(或頂部)玻璃料1533包含反應器室1534,反應器室1534可裝入奈米多孔碳粉末。還顯示了反應器主體1536。其他非材料墊片和連接器則未標記。Figure 7D is a cross-sectional side view of the reactor assembly with the pencil lamp and X-ray source removed. Gas enters at gas inlet 1541 and exits at gas outlet 1540 . RA coils 1537, 1538, and 1539 are shown. The first (or bottom) frit 1535 and the second (or top) frit 1533 contain a reactor chamber 1534, which can be filled with nanoporous carbon powder. Reactor body 1536 is also shown. Other non-material spacers and connectors are not marked.

圖7E是去除了筆形燈和X射線源的反應器組件的第二橫截面側視圖。氣體在進氣口1551處進入。顯示了RA線圈1545、1546、和1547。第一(或底部)玻璃料1544和第二(或頂部)玻璃料1542包含反應器室1543,反應器室1543可裝入奈米多孔碳粉末。還顯示了反應器主體1548。 X 射線源1549將X射線引向反應器組件的中心軸,然後用元件1550將其偏向反應器室。其他非材料間隔件和連接器則保持未標記。7E is a second cross-sectional side view of the reactor assembly with the pencil lamp and X-ray source removed. Gas enters at gas inlet 1551. RA coils 1545, 1546, and 1547 are shown. The first (or bottom) frit 1544 and the second (or top) frit 1542 contain a reactor chamber 1543 which can be filled with nanoporous carbon powder. Reactor body 1548 is also shown. X-ray source 1549 directs X-rays toward the central axis of the reactor assembly, which are then deflected toward the reactor chamber by element 1550 . Other non-material spacers and connectors are left unlabeled.

圖7F是具有筆形燈和X射線源的反應器組件的第二橫截面側視圖。氣體在進氣口1564處進入。顯示了RA線圈1555、1556、和1557。第一(或底部)玻璃料1554和第二(或頂部)玻璃料1552包含反應器室1553,反應器室1553可裝入奈米多孔碳粉末。還顯示了反應器主體1558。垂直筆形燈1560和1561則顯示為水平筆形燈15112和1559。X射線源1562將X射線導向反應器組件的中心軸,然後用元件1563向反應器室偏轉。其他非材料墊片和連接器則未標記。Figure 7F is a second cross-sectional side view of the reactor assembly with a pencil lamp and an X-ray source. Gas enters at gas inlet 1564. RA coils 1555, 1556, and 1557 are shown. The first (or bottom) frit 1554 and the second (or top) frit 1552 contain a reactor chamber 1553 that can be filled with nanoporous carbon powder. Reactor body 1558 is also shown. Vertical penlights 1560 and 1561 are shown as horizontal penlights 15112 and 1559 . X-ray source 1562 directs the X-rays towards the central axis of the reactor assembly, which are then deflected by element 1563 towards the reactor chamber. Other non-material spacers and connectors are not marked.

圖7G是具有筆形燈和X射線源的反應器組件的立體圖。氣體在進氣口1577處進入並在出氣口1578處排出。顯示了沿反應器組件的軸線將輻射導向反應器室的第一雷射1575和第二雷射1576。顯示了RA線圈1571、1572、和1573。在該實施例中,筆形燈1565、1566、1567、1568、1569、和1570都被示為沿朝向反應器組件中心軸的半徑成對水平設置。燈頭靠近RA線圈1571、1572和1573。X射線源1574將X射線導向反應器組件的中心軸。支撐件支撐所有水平筆形燈。其他非材料墊片和連接器未標記。Figure 7G is a perspective view of a reactor assembly with a pencil lamp and an X-ray source. Gas enters at gas inlet 1577 and exits at gas outlet 1578 . A first laser 1575 and a second laser 1576 are shown directing radiation toward the reactor chamber along the axis of the reactor assembly. RA coils 1571, 1572, and 1573 are shown. In this embodiment, the pen lights 1565, 1566, 1567, 1568, 1569, and 1570 are all shown arranged horizontally in pairs along a radius toward the central axis of the reactor assembly. The lamp head is near the RA coils 1571 , 1572 and 1573 . X-ray source 1574 directs X-rays towards the central axis of the reactor assembly. Support supports all horizontal penlights. Other non-material spacers and connectors are not marked.

圖7H是具有筆形燈和X射線源的反應器組件的立體圖。氣體在進氣口1591進入並在出氣口1592排出。顯示了沿反應器組件的軸線將輻射導向反應器室的第一雷射1589 和第二雷射1590。顯示了 RA線圈1585、1586、和1587。在這個實施例中,筆形燈1579、1580、1581、1582、1583、和1584都被示為成對地垂直設置在與RA線圈對齊的徑向平面中。燈頭靠近RA線圈1585、1586、和1587。X射線源1588將X射線導向反應器組件的中心軸。外支撐件15109和內支撐件15110支撐筆形燈。其他非材料墊片和連接器則未標記。Figure 7H is a perspective view of a reactor assembly with a pencil lamp and an X-ray source. Gas enters at the gas inlet 1591 and exits at the gas outlet 1592 . A first laser 1589 and a second laser 1590 are shown directing radiation toward the reactor chamber along the axis of the reactor assembly. RA coils 1585, 1586, and 1587 are shown. In this embodiment, the penlights 1579, 1580, 1581, 1582, 1583, and 1584 are all shown as pairs vertically disposed in radial planes aligned with the RA coils. The lamp head is adjacent to the RA coils 1585, 1586, and 1587. X-ray source 1588 directs X-rays towards the central axis of the reactor assembly. The outer support 15109 and the inner support 15110 support the penlight. Other non-material spacers and connectors are not marked.

圖7I是反應器組件的立體圖,示出了5個RA線圈、水平筆形燈和X射線源。氣體在進氣口15107進入並在出氣口15108排出。顯示了沿反應器組件的軸線將輻射導向反應器室的第一雷射15105 和第二雷射15106。顯示了沿反應器組件的軸線將輻射導向反應室的第一雷射15105和第二雷射15106。顯示了限定圓柱形邊界的RA線圈1599、15100、15101、15102、和15103在此實施例中,筆形燈1593、1594、1595、1596、1597、和1598都被示為成對地水平設置在與RA線圈對齊的徑向平面中。燈頭靠近RA線圈1599和15103。X 射線源15104 將X射線導向反應器組件的中心軸。外支撐件15109支撐筆形燈。其他非材料墊片和連接器則未標記。Figure 7I is a perspective view of the reactor assembly showing the 5 RA coils, horizontal pencil light and X-ray source. Gas enters at the gas inlet 15107 and exits at the gas outlet 15108. A first laser 15105 and a second laser 15106 are shown directing radiation toward the reactor chamber along the axis of the reactor assembly. A first laser 15105 and a second laser 15106 are shown directing radiation toward the reaction chamber along the axis of the reactor assembly. RA coils 1599, 15100, 15101, 15102, and 15103 defining cylindrical boundaries are shown. The RA coil is aligned in the radial plane. The lamp head is near the RA coils 1599 and 15103. X-ray source 15104 directs X-rays towards the central axis of the reactor assembly. The outer support 15109 supports the penlight. Other non-material spacers and connectors are not marked.

Ni-1反應器:Ni-1 reactor:

如圖8A所示,反應器主體1702為基於高純度鎳(Ni) 棒。將外徑為15.873 mm(OD)的Ni棒鑽孔,然後在一端加工有內螺紋。內徑允許安裝上下篩板和碳床。碳反應介質容納在反應器主體1702內。為了裝載反應器,反應器主體1702以氣體排放開口1706朝下的方式定位在平面上。石英玻璃料1705放置在反應器主體1702內以形成上部安全殼。然後將100 mg碳裝載到反應器主體1702中。在反應器主體1702內裝載石墨床之後,安裝第二石英玻璃料1703。然後將反應器桿1701用與反應器主體1702 匹配的外螺紋加工出的高純度石墨棒旋擰到反應器主體1702上。反應器桿1701被設計成提供與杯設計1708提供的相同的石墨床壓縮。As shown in Figure 8A, the reactor body 1702 is based on high purity nickel (Ni) rods. A Ni rod with an outer diameter of 15.873 mm (OD) was drilled and then processed with an internal thread at one end. The inner diameter allows the installation of upper and lower frits and carbon beds. The carbon reaction medium is housed within the reactor body 1702 . To load the reactor, the reactor body 1702 is positioned on a flat surface with the gas discharge opening 1706 facing downward. A quartz frit 1705 is placed within the reactor body 1702 to form the upper containment vessel. 100 mg of carbon is then loaded into the reactor body 1702. After loading the graphite bed in the reactor body 1702, a second quartz frit 1703 is installed. Then the reactor rod 1701 is screwed onto the reactor main body 1702 by using a high-purity graphite rod processed with an external thread matched with the reactor main body 1702 . The reactor rod 1701 is designed to provide the same compression of the graphite bed as the cup design 1708 provides.

NiPtG反應器:NiPtG reactor:

如圖8B所示,在NiPtG反應器實施例中,反應器主體 1707為基於高純度鎳(Ni)棒。將外徑為15.873 mm(OD)的Ni棒鑽孔,然後在一端加工成內徑為11.68 mm(ID)。內徑允許安裝石墨杯1708和可選的0.025 mm鉑(Pt) 箔1713。石墨杯1708提供反應器壁和箔與碳床的隔離。碳反應介質裝在99.9999wt%純石墨杯1708內。為了裝載反應器,將石英玻璃料1709放置在石墨杯1708內以形成底部安全殼。然後將100 mg碳1710裝入石墨杯1708。將石墨床裝入杯內後,安裝第二石英玻璃料1711;該系統被定義為杯組件。在安裝杯組件之前,箔1713用於襯在反應器壁的內表面上。然後將杯組件放置在鎳反應器主體1707和箔1713內。安裝杯組件後,將 99.9999wt% 的純石墨蓋1712擰到反應器主體上。蓋在組裝後防止杯移動。該圖還說明了GG反應器配置。As shown in Figure 8B, in the NiPtG reactor embodiment, the reactor body 1707 is based on high purity nickel (Ni) rods. A Ni rod with an outer diameter of 15.873 mm (OD) was drilled and then machined to an inner diameter of 11.68 mm (ID) at one end. The inner diameter allows installation of a graphite cup 1708 and optional 0.025 mm platinum (Pt) foil 1713 . Graphite cups 1708 provide isolation of the reactor walls and foil from the carbon bed. The carbon reaction medium is contained in a cup 1708 of 99.9999 wt% pure graphite. To load the reactor, a quartz frit 1709 is placed within a graphite cup 1708 to form a bottom containment vessel. 100 mg of carbon 1710 is then charged into graphite cup 1708. After loading the graphite bed into the cup, a second quartz frit 1711 is installed; this system is defined as the cup assembly. Foil 1713 is used to line the inner surface of the reactor wall prior to installation of the cup assembly. The cup assembly was then placed within the nickel reactor body 1707 and foil 1713. After installing the cup assembly, screw the 99.9999 wt% pure graphite cap 1712 onto the reactor body. The lid prevents the cup from moving after assembly. The figure also illustrates the GG reactor configuration.

PtIrGG 反應器:PtIrGG reactor:

如圖8C所示,反應器主體1714為基於高純度石墨棒。將外徑為15.873 mm(OD)的石墨棒被鑽孔,然後在一端加工成內徑為11.68 mm(ID)。內徑允許安裝石墨杯1715,用於將反應器壁與碳床隔離。碳反應介質裝在99.9999wt%純石墨杯1715 內。為了裝載反應器,將石英玻璃料1716放置在石墨杯內以形成底部安全殼。然後將100 毫克碳1717 裝入杯中。將石墨床裝入杯內後,安裝第二石英玻璃料1718;該系統被定義為杯組件。然後將杯組件放置在石墨反應器主體內1714。安裝杯組件後,將由鉑和10%wt 銥組成的蓋1719 擰到反應器主體上。蓋在組裝後防止杯移動。As shown in Figure 8C, the reactor body 1714 is based on high purity graphite rods. Graphite rods with an outer diameter of 15.873 mm (OD) were drilled and then machined at one end to an inner diameter of 11.68 mm (ID). The inner diameter allows for the installation of a graphite cup 1715 for isolating the reactor wall from the carbon bed. The carbon reaction medium is contained in a cup 1715 of 99.9999 wt% pure graphite. To load the reactor, a quartz frit 1716 is placed within a graphite cup to form a bottom containment vessel. Then put 100 mg of carbon 1717 into the cup. After loading the graphite bed into the cup, a second quartz frit 1718 is installed; this system is defined as the cup assembly. The cup assembly is then placed 1714 within the graphite reactor body. After the cup assembly is installed, a cap 1719 consisting of platinum and 10%wt iridium is screwed onto the reactor body. The lid prevents the cup from moving after assembly.

起始材料在反應器內的停留時間對於將產品例示為起始材料是有效的,並且可以在0到15分鐘之間。The residence time of the starting material in the reactor is effective to exemplify the product as the starting material and can be between 0 and 15 minutes.

參考圖9,反應器主體905具有外徑和內徑。內徑允許安裝石墨杯901,用於將反應器壁與碳床隔離。碳反應介質裝在石墨杯901內。為了裝載反應器,將下部玻璃料904放置在石墨杯內以形成底部安全殼。然後將碳903裝入杯中。將石墨床裝入杯內後,安裝上部玻璃料902;該系統被定義為杯組件。然後將杯組件放置在反應器主體內905。在安裝杯組件後,將蓋901擰到反應器主體905上。蓋在組裝後防止杯移動。氣體可以從(氣體)進氣口907 經由氣體傳輸器906傳輸。氣體在(氣體)出氣口908處排出,可選地到歧管以進行收集。氣體可以用短波紫外線(shortwave ultraviolet,SUV)燈909激發。如前所述,反應器主體和/或杯可以用電磁(electromagnetic,E/M)線圈911包裹。Referring to Figure 9, the reactor body 905 has an outer diameter and an inner diameter. The inner diameter allows the installation of a graphite cup 901 for isolating the reactor wall from the carbon bed. The carbon reaction medium is contained in the graphite cup 901. To load the reactor, a lower frit 904 is placed within a graphite cup to form a bottom containment vessel. Then fill the carbon 903 into the cup. After loading the graphite bed into the cup, the upper frit 902 is installed; the system is defined as the cup assembly. The cup assembly is then placed 905 within the reactor body. After the cup assembly is installed, the cap 901 is screwed onto the reactor body 905 . The lid prevents the cup from moving after assembly. Gas may be delivered from a (gas) gas inlet 907 via a gas transmitter 906 . Gas exits at (gas) outlet 908, optionally to a manifold for collection. The gas can be excited with a shortwave ultraviolet (SUV) lamp 909 . As previously mentioned, the reactor body and/or cup may be wrapped with electromagnetic (E/M) coils 911.

本發明方法中使用的較佳反應器如下表所示。 反應器 ID 杯材料 蓋材料 反應器材料 磁極材料 邊界 室容量 線圈類型 CgF N/A N/A 銅、鎳或鉬、或石墨 石墨 N/A 100 mg 感應 CuG 石墨 石墨 石英 N/A 100 mg 感應或頻率 PtIrGG 石墨 鉑/銥 石墨 石英 N/A 100 mg 感應 GPtG 石墨 石墨 石墨 石英 Pt 100 mg 感應或頻率 GPtGPtG 石墨 石墨 石墨 石英 2X Pt 100 mg 感應 GG-EL 石墨 石墨 石墨 石英 N/A 100 mg- 3g 感應或頻率 Foil (Pt) 石墨 石墨 石墨 石英 100 mg 感應或頻率 GZ Foil 石墨 石墨 石墨 石英 鈮、鈷、或鉑 100 mg 感應或頻率 nZG Foil 石墨 任何Z* 石墨 石英 100 mg 感應或頻率 NiG 石墨 石墨 石英 N/A 100 mg 感應或頻率 NiPtG 石墨 石墨 石英 Pt 100 mg 感應 ZG N/A 鈀/釕或任何Z 石墨 石英 N/A 100 mg 感應 Ref-X 石墨 石墨 石墨 石英 N/A 1-20g 頻率 *任何Z意指任何材料 Preferred reactors for use in the process of the present invention are shown in the table below. Reactor ID cup material cover material Reactor material pole material boundary Room capacity Coil Type CgF N/A N/A copper, nickel or molybdenum, or graphite graphite N/A 100mg induction CuG graphite graphite copper quartz N/A 100mg induction or frequency PtGG graphite platinum/iridium graphite quartz N/A 100mg induction PPG graphite graphite graphite quartz Pt 100mg induction or frequency GPtGPtG graphite graphite graphite quartz 2X Pt 100mg induction GG-EL graphite graphite graphite quartz N/A 100mg- 3g induction or frequency Foil (Pt) graphite graphite graphite quartz platinum 100mg induction or frequency GZ Foil graphite graphite graphite quartz niobium, cobalt, or platinum 100mg induction or frequency nZG Foil graphite Any Z* graphite quartz iridium 100mg induction or frequency NiG graphite graphite nickel quartz N/A 100mg induction or frequency NiPtG graphite graphite nickel quartz Pt 100mg induction ZG N/A Palladium/ruthenium or any Z graphite quartz N/A 100mg induction Ref-X graphite graphite graphite quartz N/A 1-20g frequency *Any Z means any material

本發明還涉及在奈米多孔碳粉末中例示材料的方法。已經令人驚訝地發現輕元素例如氫、氧、氦等被例示。例示在本文中定義為包括碳結構,特別是超微孔內的原子的成核和組裝。不受理論束縛,據信例示尤其與如量子場論所表達的電磁場的自由度有關。通過將氣體暴露於一個或多個超微孔內的電磁輻射的諧波共振或諧波,可以獲得真空能量密度並允許原子的成核和組裝。處於頻率發生器的光、X 射線和磁場頻率範圍內的電磁能可以增強此類諧波的形成和維持。通過選擇反應器材料和添加箔層來修改系統邊界也可以增強諧波。The invention also relates to methods of instantiating materials in nanoporous carbon powders. It has surprisingly been found that light elements such as hydrogen, oxygen, helium etc. are exemplified. Exemplary is defined herein to include the nucleation and assembly of atoms within carbon structures, particularly ultramicropores. Without being bound by theory, it is believed that instantiation is inter alia related to the degrees of freedom of electromagnetic fields as expressed by quantum field theory. By exposing the gas to harmonic resonances or harmonics of electromagnetic radiation within one or more ultramicropores, vacuum energy densities are obtained and allow nucleation and assembly of atoms. The formation and maintenance of such harmonics is enhanced by electromagnetic energy in the frequency range of the frequency generator's light, x-ray and magnetic fields. Harmonics can also be enhanced by modifying system boundaries through choice of reactor material and adding foil layers.

特別地,本發明包括生產或例示奈米多孔碳組合物的製程,包括以下步驟: 如本文所述,將奈米多孔碳粉末添加到反應器組件中; 向該反應器組件添加進料氣體; 將一或多個RA線圈供電至第一電磁能階; 加熱奈米多孔碳粉末; 在第一電磁能階和第二電磁能階之間諧波圖案化奈米多孔碳粉末至足以在奈米孔中例示材料並且可選地收集材料的時間。 In particular, the present invention includes a process for producing or exemplifying a nanoporous carbon composition, comprising the following steps: Nanoporous carbon powder is added to the reactor assembly as described herein; adding feed gas to the reactor assembly; powering one or more RA coils to a first electromagnetic energy level; heating nanoporous carbon powder; The nanoporous carbon powder is harmonically patterned between the first electromagnetic energy level and the second electromagnetic energy level for a time sufficient to instantiate and optionally collect material in the nanopores.

本發明包括一種生產產物氣體的製程,包括以下步驟: (a)向一電磁包埋設備添加進料氣體: (b)將該進料氣體暴露於至少一個E/MEE光源; (c)將來自步驟(b)的該進料氣體引導至該反應器組件,該反應器組件包括: 一氣體進氣口和一或多個氣體出氣口; 一反應器室,其包含放置在一杯內的奈米多孔碳,並且可選地用一蓋覆蓋; 第一多孔玻璃料,限定設置在該杯內的該反應器室的底板, 第二多孔玻璃料,限定該反應器室的頂部;其中每個多孔玻璃料的孔隙率足以允許氣體滲透到該反應器室中; 一反應器頂部空間,設置在該反應器室上方; 至少一RA線圈,圍繞反應器室和/或反應器頂部空間且可操作地連接到供源設備,其中一計算機處理單元被配置為控制RA線圈的該供電設備; (d)使奈米多孔碳粉末經受諧波圖案化以例示材料; (f)收集包含該材料的產物氣體;和 (g)將該材料與該產物氣體隔離。 The present invention includes a process for producing a product gas comprising the steps of: (a) Adding Feed Gas to an Electromagnetic Embedding Apparatus: (b) exposing the feed gas to at least one E/MEE light source; (c) directing the feed gas from step (b) to the reactor assembly comprising: a gas inlet and one or more gas outlets; a reactor chamber containing nanoporous carbon placed within a cup and optionally covered with a lid; a first porous frit defining a floor of the reactor chamber disposed within the cup, a second porous frit defining the top of the reactor chamber; wherein each porous frit has a porosity sufficient to allow gas to permeate into the reactor chamber; a reactor headspace disposed above the reactor chamber; at least one RA coil surrounding the reactor chamber and/or reactor headspace and operatively connected to a power supply, wherein a computer processing unit is configured to control the power supply of the RA coil; (d) Subjecting nanoporous carbon powders to harmonic patterning to exemplify the material; (f) collecting product gas containing the material; and (g) isolating the material from the product gas.

術語「諧波圖案化」在本文中被定義為在兩個或更多個能階(或狀態)之間多次振盪。能量狀態可以表徵為第一(或高)能階和第二(或較低)能階。啟動第一能階、獲得第二能階和重新建立第一能階的速率可以相同或不同。每個速率可以根據時間來定義,例如超過1、2、3、4、5、6、7、8、9、10、或更多秒。每個能階可以保持一段時間,例如1、2、3、4、5、6、7、8、9、10、或更多秒。諧波圖案化一直持續到實現例示。The term "harmonic patterning" is defined herein as multiple oscillations between two or more energy levels (or states). Energy states can be characterized as a first (or higher) energy level and a second (or lower) energy level. The rates of initiating the first energy level, attaining the second energy level, and re-establishing the first energy level may be the same or different. Each rate may be defined in terms of time, eg, over 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, or more seconds. Each energy level can be maintained for a period of time, such as 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, or more seconds. Harmonic patterning continues until instantiation is achieved.

在存在另外兩個電磁輻射源(例如,線圈、X射線源、雷射、和/或燈)的情況下,每個都可以進行諧波圖案化,並且圖案化可以獨立、同時或順序地發生。In the presence of two other sources of electromagnetic radiation (e.g., coils, X-ray sources, lasers, and/or lamps), each can be harmonically patterned, and patterning can occur independently, simultaneously, or sequentially .

該製程還包括獨立地為任何額外的電磁輻射源供電,如上文在E/MEE裝置或反應器組件中所述。例如,該製程進一步包括為連接到一個或多個RA線圈、一個或多個燈或雷射、X射線源、感應線圈、E/MEE線圈的RA頻率發生器供電的步驟,以及基本上如上所述。The process also includes independently powering any additional sources of electromagnetic radiation, as described above in the E/MEE apparatus or reactor assembly. For example, the process further includes the step of powering a RA frequency generator connected to one or more RA coils, one or more lamps or lasers, an X-ray source, an induction coil, an E/MEE coil, and substantially as above stated.

本發明特別涉及由這些方法產生的產物氣體的識別和收集。可以以連續、半連續或分批的方式從製程中收集產物氣體。產物氣體通常包含進料氣體(或第一氣體組合物,如上所述)和第二氣體組合物,例如,包含氫氣。第二氣體組合物不同於第一氣體組合物並且較佳包含一種或多種不存在於進料氣體中的氣體。例如,當進料氣體是純氮(例如,包含至少99% vol 氮的氣體,例如至少99.9% vol氮),例如具有小於1%氫的氮氣時,產物氣體將包含一種或多種其他材料(例如,在環境條件下以氣體形式存在的元素或分子),較佳地為氫。進料氣體還可以包括空氣。產物氣體可以包括氣體,例如氫氣、氦氣、水、氖氣、氮氣、一氧化碳、氧氣、氬氣、二氧化碳、碳氟化合物、氨氣、氪氣、氙氣、甲烷和其他碳氫化合物或有機物及其混合物。「產物氣體」在本文中定義為與術語「進料氣體」在組成上不同並且明確排除空氣。In particular, the present invention relates to the identification and collection of product gases produced by these processes. Product gas can be collected from the process in a continuous, semi-continuous or batch manner. The product gas typically comprises a feed gas (or a first gas composition, as described above) and a second gas composition, eg, comprising hydrogen. The second gas composition is different from the first gas composition and preferably comprises one or more gases not present in the feed gas. For example, when the feed gas is pure nitrogen (e.g., a gas comprising at least 99% vol nitrogen, such as at least 99.9% vol nitrogen), such as nitrogen with less than 1% hydrogen, the product gas will contain one or more other materials (e.g., , an element or molecule that exists as a gas under ambient conditions), preferably hydrogen. The feed gas may also include air. Product gases may include gases such as hydrogen, helium, water, neon, nitrogen, carbon monoxide, oxygen, argon, carbon dioxide, fluorocarbons, ammonia, krypton, xenon, methane and other hydrocarbons or organics and their mixture. "Product gas" is defined herein as being compositionally distinct from the term "feed gas" and expressly excluding air.

較佳的產物氣體包括氫氣和/或氧氣。通常,產物氣體中氫氣和/或氧氣的濃度將分別超過進料氣體中氫氣和/或氧氣的濃度。例如,產物氣體可以包含至少約1%vol(較佳至少約4%vol)的氫氣。在另一個實例中,產物氣體可以包含至少約20%vol(較佳至少約40%vol)的氧氣。在又一個實例中,產物氣體包含至少1%vol(較佳至少約3%vol)水。較佳地,產物氣體將進一步包括氖、氦、氬、及其組合。通常,產物氣體將進一步包含存在於進料氣體中的組分(例如,氮氣和氫氣或空氣),然而,其濃度與其不同。較佳的產物氣體包括氮氣、氫氣、和選自氖氣、氦氣、氬氣、及其組合的氣體。較佳的產物氣體包括氮氣、氫氣、氧氣和選自氖氣、氦氣、氬氣及其組合的氣體。較佳的產物氣體包括至少1%體積的氦氣、氬氣、氖氣、和組合。Preferred product gases include hydrogen and/or oxygen. Typically, the concentration of hydrogen and/or oxygen in the product gas will exceed the concentration of hydrogen and/or oxygen, respectively, in the feed gas. For example, the product gas may contain at least about 1% vol (preferably at least about 4% vol) hydrogen. In another example, the product gas can contain at least about 20% vol (preferably at least about 40% vol) oxygen. In yet another example, the product gas contains at least 1% vol (preferably at least about 3% vol) water. Preferably, the product gas will further include neon, helium, argon, and combinations thereof. Typically, the product gas will further comprise components present in the feed gas (eg nitrogen and hydrogen or air), however, in different concentrations therefrom. Preferred product gases include nitrogen, hydrogen, and gases selected from the group consisting of neon, helium, argon, and combinations thereof. Preferred product gases include nitrogen, hydrogen, oxygen, and gases selected from the group consisting of neon, helium, argon, and combinations thereof. Preferred product gases include at least 1% by volume of helium, argon, neon, and combinations.

本發明允許製造綠色氣體,例如具有小於0.5%vol CO 2,例如小於100 ppm CO 2的產物氣體。 The invention allows the production of green gases, eg product gases with less than 0.5% vol CO 2 , eg less than 100 ppm CO 2 .

氫氣可以從產物氣體中分離或純化,從而產生高濃度氫氣。使用氫選擇性膜的純化系統的一個例子。用於膜的合適材料的例子包括鈀和鈀合金,尤其是這種金屬和金屬合金的薄膜。鈀合金特別有效,尤其是含有35 wt%到45 wt%銅的鈀。另一種有效的合金是具有2 wt%至10 wt% 金的鈀,例如具有5 wt%金的鈀。氫選擇性膜可以配置為箔。可替代地或另外地,變壓吸附系統可用於濃縮氫氣並去除不需要的氣體。這種製程使用活性炭、二氧化矽、或沸石。Hydrogen can be separated or purified from the product gas to produce a high concentration of hydrogen. An example of a purification system using a hydrogen-selective membrane. Examples of suitable materials for the membrane include palladium and palladium alloys, especially thin films of such metals and metal alloys. Palladium alloys are particularly effective, especially palladium containing 35 wt% to 45 wt% copper. Another effective alloy is palladium with 2 wt% to 10 wt% gold, eg palladium with 5 wt% gold. The hydrogen selective membrane can be configured as a foil. Alternatively or additionally, a pressure swing adsorption system may be used to concentrate hydrogen and remove unwanted gases. This process uses activated carbon, silica, or zeolites.

實例1:能量/光梳活化(E/LC)Example 1: Energy/comb activation (E/LC)

將一百毫克(100 mg)碳粉放入GG-EL石墨管式反應器(15.875 毫米)外徑,內徑加工至約9毫米)。將該反應器插入圖2A的反應器組件中,然後放入高真空烘箱中以根據脫氣程序脫氣(參見設定1或設定2)。 脫氣後,反應器組件被轉移到測試單元進行處理。 研究級氮氣(N 2)以2 SLPM 輸送,以淨化系統至少25秒或更長時間。如上所述,氣體在水平和水平的氣體管線中通過E/MEE。在淨化期間,氣體採樣管線也被淨化。 TEDLAR ®密封袋在使用時會在淨化循環期間連接到採樣管線。 One hundred milligrams (100 mg) of carbon powder was placed in a GG-EL graphite tube reactor (15.875 mm outer diameter, inner diameter machined to about 9 mm). Insert this reactor into the reactor assembly of Figure 2A, then place in a high vacuum oven to degas according to the degassing procedure (see Setup 1 or Setup 2). After degassing, the reactor components were transferred to the test unit for processing. Research grade nitrogen (N 2 ) is delivered at 2 SLPM to purge the system for at least 25 seconds or longer. As mentioned above, gas passes through the E/MEE in horizontal and horizontal gas lines. During purge, the gas sampling line is also purged. TEDLAR ® Sealed Bags, when used, are connected to the sampling line during the decontamination cycle.

在圖1中,位於位置0的氬「KC」燈108(垂直燈方向;距進氣口或入口法蘭7.62 cm;在180°處;燈泡頭端指向距氣體管線外徑2.54 cm)在開始時打開,同時將供電設備通電至5安培。該燈保持至少9秒的保持時間。位置1中的下一個燈109(109;水平燈方向;距進氣口或入口法蘭 7.62 cm;在180°處;燈泡頭端面向出口板;光學入口處的燈泡玻璃底座;距氣體管線外徑5.08cm),其為氪燈,打開後供電設備的功率增加到10安培。將其保持3秒,燈107,在位置1(107;水平燈方向;在0°處;在面向出口板的光學出口處的燈泡頭端;距離氣體管線外徑5.04cm),其為氙燈,打開並保持9秒,並將功率增加到15安培。依次打開這3個燈後,打開密封的TEDLAR ®密封袋進行氣體收集,將輸送到反應器的安培數調整為100安培並保持至少30秒。功率增加後立即在位置1打開為氖燈的燈103(103;垂直燈方向;距進氣口或入口法蘭7.62 cm;在0°處;燈泡尖端指向距離氣體管線外徑 2.54 cm)。 In Figure 1, an argon "KC" lamp 108 at position 0 (perpendicular to the lamp direction; 7.62 cm from the gas inlet or inlet flange; at 180°; bulb tip pointing 2.54 cm from the outside diameter of the gas line) at the beginning at the same time turn on the power supply device to 5 amps. The light remains on for a hold time of at least 9 seconds. Next lamp 109 in position 1 (109; horizontal lamp orientation; 7.62 cm from air inlet or inlet flange; at 180°; bulb head end facing outlet plate; bulb glass base at optical inlet; outside gas line 5.08cm in diameter), which is a krypton lamp, and the power of the power supply device increases to 10 amperes after it is turned on. Hold it for 3 seconds, lamp 107, in position 1 (107; horizontal lamp orientation; at 0°; bulb tip at optical exit facing exit plate; 5.04 cm from gas line OD), which is a xenon lamp, Turn on and hold for 9 seconds and increase power to 15 amps. After turning on these 3 lamps in sequence, open the sealed TEDLAR® airtight bag for gas collection, adjust the amperage delivered to the reactor to 100 amps and hold for at least 30 seconds. Turn on lamp 103 as neon at position 1 immediately after power increase (103; vertical lamp orientation; 7.62 cm from air inlet or inlet flange; at 0°; bulb tip pointing 2.54 cm from gas line OD).

然後在反應器上啟動安培諧波圖案化。對於每個安培模式(振盪),送入反應器的氣體可以通過相同或不同的光序列進行處理。在實驗方案的一個實施例中,反應器的安培數在1秒內增加到78.5安培,即高端諧波模式點。然後反應器的安培數在9秒內降至38.5安培,並在38.5安培下保持3秒。在3秒保持開始時,打開位置1處的氬燈122(122;水平燈方向;在180°處;燈泡頭端指向光學入口處的入口板;距離氣體管線外徑5.04 cm)。在保持3秒後,反應器的安培數在9秒內上升到78.5安培,達到78.5安培後保持3秒,然後開始下降。反應器的安培數在9秒內降至38.5安培,然後保持3秒。在3秒保持開始時,立即打開在位置1處為氖燈的燈103。反應器的安培數在9秒內再次上升到78.5安培,保持3秒,然後在9秒內再次下降到38.5 安培。打開位置1處的長波紫外燈(104;水平燈方向;在90°處;燈泡頭端面向光入口處的入口板;距離氣體管線外徑 5.04 cm)。Amperometric harmonic patterning is then initiated on the reactor. For each amperometric mode (oscillation), the gas fed into the reactor can be processed by the same or different light sequences. In one example of the experimental protocol, the reactor amperage was increased within 1 second to 78.5 amps, the high-end harmonic mode point. The reactor amperage was then dropped to 38.5 amps for 9 seconds and held at 38.5 amps for 3 seconds. At the beginning of the 3-second hold, turn on the argon lamp 122 at position 1 (122; horizontal lamp orientation; at 180°; bulb tip pointing toward the entrance plate at the optical entrance; 5.04 cm from the outer diameter of the gas line). After a 3 second hold, the reactor amperage ramped up to 78.5 amps in 9 seconds, reached 78.5 amps, held for 3 seconds, and then began to drop. The reactor amperage was dropped to 38.5 amps for 9 seconds and held there for 3 seconds. At the beginning of the 3 second hold, the lamp 103 which is a neon lamp at position 1 is turned on immediately. The reactor amperage was raised again to 78.5 amps within 9 seconds, held for 3 seconds, and then dropped again to 38.5 amps within 9 seconds. Turn on the long-wave UV lamp at position 1 (104; horizontal lamp orientation; at 90°; bulb head end facing the entrance plate at the light entrance; 5.04 cm from the outer diameter of the gas line).

反應器在9秒內再次上升至78.5安培,保持3秒,然後在另外9秒內降至38.5安培。接下來打開E/MEE(位置1)E/MEE部分的短波紫外線燈(105;水平燈方向;距進氣口或入口法蘭7.62 cm;在270°處;燈泡頭端位於光學入口並面向入口板;距氣體管線外徑5.04 cm)E/MEE(位置1)並保持3秒。反應器在9秒內再次上升至78.5安培並保持3秒。在保持3秒後,反應器電流在另外9秒內降至38.5安培。然後反應器在38.5安培下保持3秒,然後在9秒內啟動另一個上升到78.5安培的斜坡。在進入該斜坡3秒時,打開位置1處的燈107並保持在 9秒總斜坡的剩餘6秒內。反應器在此條件下保持3秒。The reactor ramped up again to 78.5 amps for 9 seconds, held for 3 seconds, then dropped to 38.5 amps for another 9 seconds. Next turn on the E/MEE (Position 1) SWUV lamp in the E/MEE section (105; horizontal lamp orientation; 7.62 cm from the air inlet or inlet flange; at 270°; bulb tip at the optical inlet and facing the inlet plate; 5.04 cm from gas line OD) E/MEE (position 1) and hold for 3 seconds. The reactor was ramped up again to 78.5 amps in 9 seconds and held for 3 seconds. After holding for 3 seconds, the reactor current dropped to 38.5 amps for an additional 9 seconds. The reactor was then held at 38.5 amps for 3 seconds before another ramp up to 78.5 amps was initiated over 9 seconds. At 3 seconds into the ramp, light 107 at position 1 is turned on and held for the remaining 6 seconds of the 9 second total ramp. The reactor was maintained at this condition for 3 seconds.

在E/MEE部分的燈103、108、106、105、和104同時關閉,且反應器斷電。反應器保持在此狀態,連續氣流27秒,在此期間TEDLAR ®袋被關閉並取出。關閉所有剩餘的燈並且氣流繼續240秒。 Lamps 103, 108, 106, 105, and 104 in the E/MEE section were simultaneously turned off, and the reactor was de-energized. The reactor was held in this state with continuous gas flow for 27 seconds, during which time the TEDLAR® bag was closed and removed. All remaining lights were turned off and air flow continued for 240 seconds.

實例2:脫氣設定1Example 2: Degassing setting 1

如上所述,將100毫克(100 mg)碳粉置於石墨管式反應器(15.875 mm)外徑,內徑加工至約9 mm)中,並裝入封閉端系統。在完成十個封閉端設置後,將每個單獨的單元裝入脫氣爐開口,並將所有進出管線連接到封閉端系統。隔離每個反應器的每條進線,同時保持出線處於打開位置。啟動真空系統,直到真空計讀數至少為750 mmHg。達到750 mmHg後,關閉封閉端系統的所有出線閥門並固定真空泵。對系統進行了30分鐘的洩漏測試。成功通過洩漏檢查後,以0.4 slpm N 2逐一打開每條通往封閉端系統的進線。一旦所有輸入管線打開並且真空計達到輕微的正壓,打開脫氣爐上的輸出氣體管線。在保持N 2流量的同時,在1小時內開始將脫氣爐曲線從T amb升溫至400 oC。在1小時的線性變化後,在保持氣流的同時再保持流量一小時以穩定溫度。溫度穩定完成後,固定所有進入的氣流並隔離脫氣爐排氣管線。立即啟動真空泵並開始脫氣程序。保持溫度和真空12小時。12小時後,在移除封閉端單元之前讓爐冷卻。 As above, 100 milligrams (100 mg) of carbon powder was placed in a graphite tube reactor (15.875 mm outer diameter, machined to about 9 mm inner diameter) and loaded into a closed-end system. After completing the ten closed-end setups, fit each individual unit into the degassing furnace opening and connect all incoming and outgoing lines to the closed-end system. Isolate each incoming line to each reactor while leaving the outgoing line in the open position. Start the vacuum system until the vacuum gauge reads at least 750 mmHg. After reaching 750 mmHg, close all outlet valves of the closed-end system and secure the vacuum pump. The system was leak tested for 30 minutes. After successfully passing the leak check, open each incoming line to the closed-end system one by one with 0.4 slpm N2 . Once all input lines are open and the vacuum gauge reaches a slight positive pressure, open the output gas line on the degasser furnace. While maintaining the N2 flow, start ramping the degassing furnace profile from T amb to 400 ° C over 1 hour. After 1 hour of linear change, maintain flow while maintaining airflow for an additional hour to stabilize temperature. After temperature stabilization is complete, secure all incoming airflow and isolate the degasser exhaust line. Immediately start the vacuum pump and start the degassing procedure. Maintain temperature and vacuum for 12 hours. After 12 hours, allow the furnace to cool before removing the dead-end unit.

實例 3:脫氣設定2Example 3: Degas Setting 2

如上所述,將100毫克(100 mg)碳粉置於石墨管式反應器(15.875 mm)外徑,內徑加工至約9 mm)中,並裝入封閉端系統。在完成十個封閉端設置後,將每個單獨的單元裝入脫氣爐開口並將所有進出管線連接到封閉端系統。隔離每個反應器的每條進線,同時保持出線處於打開位置。啟動真空系統,直到真空計讀數至少為750 mmHg。達到750 mmHg 後,關閉封閉端系統的所有出線閥門並固定真空泵。對系統進行了30 分鐘的洩漏測試。成功通過洩漏檢查後,以0.4 SLPM N 2逐次打開每條通往封閉端系統的進線。一旦所有進氣管線都打開並且真空計達到輕微的正壓,則打開脫氣爐上的氣體出氣管線。開始脫氣爐曲線從200 oC±50 oC在1小時內升溫至400 oC,同時保持N 2流量。在1小時的線性變化後,在保持氣流的同時再保持流量1小時以穩定溫度。溫度穩定完成後,固定所有進入的氣流並隔離脫氣爐排氣管線。立即啟動真空泵並開始脫氣程序。保持溫度和真空12小時。12小時後,在移除封閉端單元之前讓爐冷卻。 As above, 100 milligrams (100 mg) of carbon powder was placed in a graphite tube reactor (15.875 mm outer diameter, machined to about 9 mm inner diameter) and loaded into a closed-end system. After completing the ten closed-end setups, fit each individual unit into the degassing furnace opening and connect all incoming and outgoing lines to the closed-end system. Isolate each incoming line to each reactor while leaving the outgoing line in the open position. Start the vacuum system until the vacuum gauge reads at least 750 mmHg. After reaching 750 mmHg, close all outgoing valves of the closed-end system and secure the vacuum pump. The system was leak tested for 30 minutes. After successfully passing the leak check, open each incoming line to the closed-end system one at a time at 0.4 SLPM N 2 . Once all inlet lines are open and the vacuum gauge reaches a slight positive pressure, open the gas outlet line on the degasser. Start the degassing furnace profile from 200 ° C ± 50 ° C to 400 ° C within 1 h while maintaining the N flow. After 1 hour of linear change, maintain flow while maintaining airflow for an additional 1 hour to stabilize temperature. After temperature stabilization is complete, secure all incoming airflow and isolate the degasser exhaust line. Immediately start the vacuum pump and start the degassing procedure. Maintain temperature and vacuum for 12 hours. After 12 hours, allow the furnace to cool before removing the dead-end unit.

實例4:氣體分析Example 4: Gas Analysis

對於TEDLAR ®袋中氣體樣本的化學分析,基於密封裝置的內部氣體分析建立的標準測試方法開發了測試程序。在樣本測量之前,系統背景是通過遵循用於樣氣的精確測量程序來確定的。對於系統背景和樣本,通過毛細管將固定體積的氣體引入Pfeiffer QMA 200M四極桿質譜儀(QMS)系統。通過毛細管,將固定體積的氣體引入Pfeiffer QMA 200M四極桿質譜儀 (QMS) 系統。引入樣氣後,測量特定質量的離子電流(與系統背景分析的質量相同)。在背景和樣氣分析期間,還記錄了QMS系統的總壓力,從而可以校正測量的離子電流。 For the chemical analysis of gas samples in TEDLAR ® bags, a test procedure was developed based on established standard test methods for internal gas analysis of sealed devices. Prior to sample measurement, the system background is determined by following an exact measurement procedure for the sample gas. For system background and samples, a fixed volume of gas was introduced into a Pfeiffer QMA 200M quadrupole mass spectrometer (QMS) system via a capillary. A fixed volume of gas was introduced into a Pfeiffer QMA 200M quadrupole mass spectrometer (QMS) system via a capillary. After the sample gas is introduced, the ion current is measured at a specific mass (the same mass as the background analysis of the system). During background and sample gas analysis, the total pressure of the QMS system was also recorded, allowing correction of the measured ion currents.

表1:針對測試分析的氣體和反捲積中使用的測量質量。 氣體 用於反捲積的質量  1. 氫氣 2, 18, 55, 57  2. 氦氣 (3) 2,4  3. 氦氣 (4) 4  4. 甲烷 14,15  5. 水 18,32,40  6. 氖 (20) 18,20,40  7. 氖 (22) 20  8. 氮氣 14  9. 一氧化碳 14, 28 10. 氧氣 32 11. 氬氣 40,41,43 12. 二氧化碳 44 13. 總碳氫化合物和有機物 55, 57 14. 碳氟化合物 69 15. 氨 17,18 16. 氪 84 17. 氙 132 Table 1: Gases analyzed for the tests and measured masses used in deconvolution. gas the quality to use for deconvolution 1. Hydrogen 2, 18, 55, 57 2. Helium (3) 2,4 3. Helium (4) 4 4. Methane 14,15 5. water 18,32,40 6. Neon (20) 18,20,40 7. Neon (22) 20 8. Nitrogen 14 9. Carbon monoxide 14, 28 10. Oxygen 32 11. Argon 40,41,43 12. Carbon dioxide 44 13. Total hydrocarbons and organic matter 55, 57 14. Fluorocarbons 69 15. Ammonia 17,18 16. Krypton 84 17. Xenon 132

數據分析:data analysis:

將每個質量的離子電流測量值校正為針對壓力差校正的測量背景貢獻的平均值。在背景校正之後,對單個校正的質量信號進行平均並校正到已知的氣體標準,以確定17種氣體種類的體積百分比。使用基於標準測試方法的開發程序,根據軍用標準(MIL-STD-883)測試方法1018,微電路,使用分析的氮氣和氮氫混合參考氣體來確定所有校正,以匹配測試樣本的選定工藝氣體,修訂版 L,FSC/Area:5962(DLA,2019年9月16日)。結果如下:1%=10,000 ppm,空白氣體和樣本的體積值是使用開發的氣體分析測試方法產生的,並使用99.98%氮氣和0.02%氫氣的氣體混合物標準進行驗證。所有分析均由紐約利物浦的EAG實驗室使用標準TEDLAR ®袋式氣體採樣程序和特定的質譜方法進行。 The ion current measurements for each mass were corrected as the mean of the measured background contribution corrected for the pressure difference. After background correction, the individual corrected mass signals were averaged and corrected to known gas standards to determine the volume percent of 17 gas species. Using standard test method-based development procedures, in accordance with Military Standard (MIL-STD-883) Test Method 1018, Microcircuits, using analytical nitrogen and nitrogen-hydrogen mixed reference gases to determine all corrections to match the selected process gas for the test sample, Revision L, FSC/Area: 5962 (DLA, 16 September 2019). The results are as follows: 1% = 10,000 ppm, the volume values of blank gas and sample were generated using the developed gas analysis test method and verified using a gas mixture standard of 99.98% nitrogen and 0.02% hydrogen. All analyzes were performed by EAG Laboratories in Liverpool, NY using standard TEDLAR® bag gas sampling procedures and specific mass spectrometry methods.

質量分析儀:四極桿質譜儀(Pfeiffer QMA 200M)Mass Analyzer: Quadrupole Mass Spectrometer (Pfeiffer QMA 200M)

測量模式:選定質量的模擬掃描Measurement mode: Analog scan at selected quality

使用的通道數:64Number of channels used: 64

質量分辨率:單位分辨率Mass Resolution: Unit Resolution

最大可檢測濃度:100%Maximum detectable concentration: 100%

最低可檢測濃度:1 ppbMinimum detectable concentration: 1 ppb

背景真空度:<2 x 10 -6Torr Background vacuum: <2 x 10 -6 Torr

結果:result:

程序1: 分析的氣體 (Vol %) Ill. 1 Ill. 2 Ill. 3 Ill. 4 Ill. 5 氫氣 0.7678 0.2405 0 0 0.0162 氦氣 (4) 0.1923 0.2963 0.1928 0.5476 0.1254 甲烷 (CH 4) 0 0 0 0 0 水(H 2O) 0.4054 1.0773 0 0 0 氖(20) 0.036 0.03 0.0417 0.1789 0.0345 氖(22) 0.0036 0.003 0.0042 0.0179 0.0035 氮氣 95.276 89.3705 99.347 88.2306 99.6251 一氧化碳(CO) 0 0 0 0 0 氧氣 3.1604 8.5606 0.3796 10.945 0.1826 氬氣 0.0676 0.349 0.0003 0.08 0 二氧化碳(CO 2) 0.0138 0 0 0 0 總碳氫化合物和有機物 0.0269 0 0.0175 0 0 碳氟化合物 0.0261 0.0417 0.0162 0 0.0127 氨 (NH 3) 0 0.031 0 0 0 0.0242 0 0 0 0 0 0 0 0 0 Procedure 1: Analyzed gas (Vol %) Ill. 1 Ill. 2 Ill. 3 Ill. 4 Ill. 5 hydrogen 0.7678 0.2405 0 0 0.0162 Helium (4) 0.1923 0.2963 0.1928 0.5476 0.1254 Methane (CH 4 ) 0 0 0 0 0 water ( H2O ) 0.4054 1.0773 0 0 0 Neon (20) 0.036 0.03 0.0417 0.1789 0.0345 Neon (22) 0.0036 0.003 0.0042 0.0179 0.0035 Nitrogen 95.276 89.3705 99.347 88.2306 99.6251 carbon monoxide (CO) 0 0 0 0 0 oxygen 3.1604 8.5606 0.3796 10.945 0.1826 Argon 0.0676 0.349 0.0003 0.08 0 carbon dioxide (CO 2 ) 0.0138 0 0 0 0 Total Hydrocarbons and Organic Matter 0.0269 0 0.0175 0 0 Fluorocarbon 0.0261 0.0417 0.0162 0 0.0127 Ammonia (NH 3 ) 0 0.031 0 0 0 ammonia 0.0242 0 0 0 0 xenon 0 0 0 0 0

程序1(續) 分析的氣體 (Vol %) Ill. 6 Ill 7 Ill. 8 Ill. 9 氫氣 1.027 0 0 4.0494 氦氣(4) 0.364 2.6033 0.2145 25.118 甲烷(CH 4) 0 0 0 0 水(H 2O) 0 0 0 0 氖(20) 0.1093 0.4736 0.0308 5.6369 氖 (22) 0.0109 0.0474 0.0031 0.5637 氮氣 97.1911 94.6204 95.9834 56.538 一氧化碳(CO) 0 0 0 0 氧氣 1.2975 2.2553 3.7604 4.1726 氬氣 0 0 0.0078 0 二氧化碳(CO 2) 0 0 0 0 總碳氫化合物和有機物 0 0 0 1.0654 碳氟化合物 0 0 0 1.9565 氨(NH 3) 0 0 0 0 0 0 0 0.8997 0 0 0 0 Procedure 1 (continued) Analyzed gas (Vol %) Ill. 6 Ill 7 Ill. 8 Ill. 9 hydrogen 1.027 0 0 4.0494 Helium (4) 0.364 2.6033 0.2145 25.118 Methane (CH 4 ) 0 0 0 0 water ( H2O ) 0 0 0 0 Neon (20) 0.1093 0.4736 0.0308 5.6369 Neon (22) 0.0109 0.0474 0.0031 0.5637 Nitrogen 97.1911 94.6204 95.9834 56.538 carbon monoxide (CO) 0 0 0 0 oxygen 1.2975 2.2553 3.7604 4.1726 Argon 0 0 0.0078 0 carbon dioxide (CO 2 ) 0 0 0 0 Total Hydrocarbons and Organic Matter 0 0 0 1.0654 Fluorocarbon 0 0 0 1.9565 Ammonia (NH 3 ) 0 0 0 0 krypton 0 0 0 0.8997 xenon 0 0 0 0

程序2: 分析的氣體 (Vol %) Ill. 10 Ill. 11 Ill. 12 Ill. 13 Ill. 14 Ill. 15 氫氣 0 1.0428 1.3437 0 1.6249 1.7941 氦氣(4) 0.4679 0.3492 0.4409 0.8074 0.4888 0.6406 甲烷(CH 4) 0 0 0 0 0 0 水(H 2O) 0 2.3924 3.1436 0 4.4032 2.4182 氖(20) 0.1598 0 0 0 0 0 氖(22) 0.016 0 0 0 0 0 氮氣 76.7986 79.9798 94.2126 51.1046 92.2167 75.6209 一氧化碳(CO) 0 0 0 0 0 0 氧氣 22.079 15.565 0.8348 48.088 1.239 18.7733 氬氣 0.4639 0.5717 0 0 0 0.721 二氧化碳(CO 2) 0 0.0991 0.0244 0 0.0274 0.0319 總碳氫化合物和有機物 0 0 0 0 0 0 碳氟化合物 0.0147 0 0 0 0 0 氨(NH 3) 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 Procedure 2: Analyzed gas (Vol %) Ill. 10 Ill. 11 Ill. 12 Ill. 13 Ill. 14 Ill. 15 hydrogen 0 1.0428 1.3437 0 1.6249 1.7941 Helium (4) 0.4679 0.3492 0.4409 0.8074 0.4888 0.6406 Methane (CH 4 ) 0 0 0 0 0 0 water ( H2O ) 0 2.3924 3.1436 0 4.4032 2.4182 Neon (20) 0.1598 0 0 0 0 0 Neon (22) 0.016 0 0 0 0 0 Nitrogen 76.7986 79.9798 94.2126 51.1046 92.2167 75.6209 carbon monoxide (CO) 0 0 0 0 0 0 oxygen 22.079 15.565 0.8348 48.088 1.239 18.7733 Argon 0.4639 0.5717 0 0 0 0.721 carbon dioxide (CO 2 ) 0 0.0991 0.0244 0 0.0274 0.0319 Total Hydrocarbons and Organic Matter 0 0 0 0 0 0 Fluorocarbon 0.0147 0 0 0 0 0 Ammonia (NH 3 ) 0 0 0 0 0 0 krypton 0 0 0 0 0 0 xenon 0 0 0 0 0 0

標準(氮氣): 分析的氣體 體積 % 標準 99.98 vol% N 2/ 200 ppm H 2 氫氣 0.0223 氦氣 (3) 0.0000 氦氣 (4) 0.0000 甲烷 (CH 4) 0.0000 水 (H 2O) 0.0000 氖 (20) 0.0000 氖(22) 0.0000 氮氣 99.9777 一氧化碳(CO) 0.0000 氧氣 0.0000 氬氣 0.0000 二氧化碳(CO 2) 0.0000 總碳氫化合物和有機物 0.0000 碳氟化合物 0.0000 氨(NH 3) 0.0000 0.0000 0.0000 Standard (nitrogen): Analyzed gas Volume % Standard 99.98 vol% N 2 / 200 ppm H 2 hydrogen 0.0223 Helium (3) 0.0000 Helium (4) 0.0000 Methane (CH 4 ) 0.0000 water ( H2O ) 0.0000 Neon (20) 0.0000 Neon (22) 0.0000 Nitrogen 99.9777 carbon monoxide (CO) 0.0000 oxygen 0.0000 Argon 0.0000 carbon dioxide (CO 2 ) 0.0000 Total Hydrocarbons and Organic Matter 0.0000 Fluorocarbon 0.0000 Ammonia (NH 3 ) 0.0000 krypton 0.0000 xenon 0.0000

實例5:能量/光梳活化(E/LC)Example 5: Energy/comb activation (E/LC)

將一百毫克(100 mg)碳粉放入GG-EL石墨管式反應器(15.875 mm)外徑,內徑加工至約9 mm)。在一次迭代中,粉末碳的放置是在包含紫外光的可見發射光譜存在下進行的。將該反應器插入圖2A的反應器組件中,然後放入高真空烘箱中以根據脫氣程序脫氣(參見程序1或程序2)。脫氣後,反應器組件被轉移到測試單元進行處理。研究級氮氣(N 2)以2 SLPM輸送,以淨化系統至少25秒或更長時間。如上所述,氣體在水平和水平的氣體管線中通過E/MEE。運行的一個迭代可以包括在進氣管線上使用SUV燈。如圖9所示,使用時和運行啟動前,打開位於進氣管線上的水平的SUV燈909並允許加熱5分鐘以用於E/M穩定。該燈在整個運行過程中都亮著。在淨化期間,氣體採樣管線也被淨化。Tedlar ®密封袋在使用時會在淨化循環期間連接到採樣管。 One hundred milligrams (100 mg) of carbon powder was put into a GG-EL graphite tube reactor (15.875 mm outer diameter, inner diameter machined to about 9 mm). In one iteration, the placement of the powdered carbon was performed in the presence of a visible emission spectrum that includes ultraviolet light. Insert this reactor into the reactor assembly of Figure 2A, then place in a high vacuum oven to degas according to the degassing procedure (see Procedure 1 or Procedure 2). After degassing, the reactor components were transferred to the test unit for processing. Research grade nitrogen ( N2 ) is delivered at 2 SLPM to purge the system for at least 25 seconds or longer. As mentioned above, gas passes through the E/MEE in horizontal and horizontal gas lines. One iteration of the run could include the use of SUV lights on the intake line. As shown in Figure 9, when in use and prior to start of operation, turn on the horizontal SUV light 909 on the intake line and allow to heat up for 5 minutes for E/M stabilization. The light stays on throughout the operation. During purge, the gas sampling line is also purged. Tedlar ® airtight bags, when used, are attached to the sampling line during the decontamination cycle.

參考圖1,位於位置0的氬「KC」燈108(垂直燈方向;距入口或入口法蘭7.62 cm;在180°處;燈泡頭端指向距氣體管線外徑2.54 cm)在開始時打開,同時將供電設備通電至5安培。該燈保持至少9秒的保持時間。位置1中的下一個燈109(109;水平燈方向;距進氣口或入口法蘭7.62 cm;在180°處;燈泡頭端面向出口板;光學入口處的燈泡玻璃底座;距氣體管線外徑 5.08 厘米),其為氪燈,被打開並將電源的功率增加到10安培。將其保持3秒,打開在位置1為氙燈的燈107(107;水平燈方向;在0°處;在面向出口板的光學出口處的燈泡頭端;距離氣體管線外徑5.04 cm)並保持9秒,且將功率增加到15安培。依次打開這3個燈後,打開密封Tedlar ®袋進行氣體收集,將輸送到反應器的電流調整為 100安培並保持至少30秒。功率增加後立即打開在位置1為氖燈的燈103(103;垂直燈方向;距進氣口或入口法蘭7.62 cm;在0°處;燈泡頭端指向距離氣體管線外徑2.54 cm)。 Referring to Figure 1, the argon "KC" lamp 108 at position 0 (perpendicular to the lamp direction; 7.62 cm from the inlet or inlet flange; at 180°; bulb tip pointing 2.54 cm from the outside diameter of the gas line) was initially turned on, Simultaneously energize the power supply to 5 amps. The light remains on for a hold time of at least 9 seconds. Next lamp 109 in position 1 (109; horizontal lamp orientation; 7.62 cm from air inlet or inlet flange; at 180°; bulb head end facing outlet plate; bulb glass base at optical inlet; outside gas line 5.08 cm in diameter), which is a krypton lamp, was turned on and the power of the power supply was increased to 10 amps. Hold it for 3 seconds, turn on lamp 107 which is a xenon lamp in position 1 (107; horizontal lamp orientation; at 0°; bulb tip at optical exit facing exit plate; 5.04 cm from gas line OD) and hold 9 seconds and increase the power to 15 amps. After turning on these 3 lamps in turn, open the sealed Tedlar ® bag for gas collection, adjust the current delivered to the reactor to 100 amps and maintain it for at least 30 seconds. Turn on lamp 103 which is neon in position 1 immediately after power increase (103; vertical lamp direction; 7.62 cm from air inlet or inlet flange; at 0°; bulb tip pointing 2.54 cm from gas line outer diameter).

然後在反應器上啟動安培諧波圖案化。對於每個安培模式(振盪),送入反應器的氣體可以通過相同或不同的光序列進行處理。在實驗程序的一個實施例中,反應器的安培數在1秒內增加到78.5安培,即高端諧波模式點。然後反應器的安培數在9秒內降至38.5安培,並在38.5安培下保持3秒。在3秒保持一開始時,打開位置1處的氬燈122(122;水平燈方向;在180°處;燈泡頭端指向光學入口處的入口板;距離氣體管線外徑5.04 cm)。在保持3秒後,反應器的安培數在9秒內上升到78.5安培,並在78.5安培後保持3秒,然後開始下降。反應器安培數在9秒內降至38.5安培,然後保持3秒。在3秒保持一開始時,打開位置1的氖燈103。反應器安培數在9秒內再次上升到78.5安培,並保持3秒,如果在一個循環中收集了兩個氣體樣本,此時關閉第一個Tedlar ®袋並打開第二個袋以收集氣體然後功率在9秒內再次下降到38.5安培。打開位置1的長波紫外燈(104;水平燈方向;在90°處;燈泡頭端面向光入口處的入口板;距離氣體管線外徑5.04 cm)。 Amperometric harmonic patterning is then initiated on the reactor. For each amperometric mode (oscillation), the gas fed into the reactor can be processed by the same or different light sequences. In one embodiment of the experimental procedure, the reactor amperage was increased within 1 second to 78.5 amps, the high-end harmonic mode point. The reactor amperage was then dropped to 38.5 amps for 9 seconds and held at 38.5 amps for 3 seconds. At the beginning of the 3-second hold, turn on the argon lamp 122 at position 1 (122; horizontal lamp orientation; at 180°; bulb tip pointing toward the entrance plate at the optical entrance; 5.04 cm from the outer diameter of the gas line). After a 3 second hold, the reactor amperage ramped up to 78.5 amps for 9 seconds, held at 78.5 amps for 3 seconds, and then began to drop. Reactor amperage drops to 38.5 amps for 9 seconds and then holds for 3 seconds. At the beginning of the 3 second hold, the neon lamp 103 in position 1 is turned on. Reactor amperage ramps up again to 78.5 amps in 9 seconds and holds for 3 seconds, if two gas samples are collected in one cycle at which point the first Tedlar® bag is closed and the second bag is opened to collect the gas then Power drops again to 38.5 amps in 9 seconds. Turn on the long-wave UV lamp in position 1 (104; horizontal lamp orientation; at 90°; the end of the bulb tip facing the entrance plate at the light entrance; 5.04 cm from the outer diameter of the gas line).

反應器在9秒內再次上升至78.5 安培,保持3秒,然後在另外9秒內降至38.5安培。接下來打開E/MEE(位置1)E/MEE部分的短波紫外線燈(105;水平燈方向;距進氣口或入口法蘭7.62 cm;在270°處;燈泡頭端位於光學入口並面向入口板;距氣體管線外徑5.04 cm)並保持 3 秒。反應器在9秒內再次上升至78.5安培並保持3秒。在保持3秒後,反應器電流在另外9秒內降至38.5安培。然後反應器在38.5安培下保持3秒,然後在9秒內啟動另一個上升到78.5安培的線性變化。在進入該線性變化3秒時,打開位於位置 1(107)的燈107並保持在9秒線性變化的剩餘6秒內。反應器在此條件下保持3秒。The reactor ramped up again to 78.5 amps for 9 seconds, held for 3 seconds, then dropped to 38.5 amps for another 9 seconds. Next turn on the E/MEE (Position 1) SWUV lamp in the E/MEE section (105; horizontal lamp orientation; 7.62 cm from the air inlet or inlet flange; at 270°; bulb tip at the optical inlet and facing the inlet plate; 5.04 cm from gas line OD) and hold for 3 seconds. The reactor was ramped up again to 78.5 amps in 9 seconds and held for 3 seconds. After holding for 3 seconds, the reactor current dropped to 38.5 amps for an additional 9 seconds. The reactor was then held at 38.5 amps for 3 seconds before initiating another linear ramp up to 78.5 amps in 9 seconds. On entering the 3 second ramp, light 107 at position 1 (107) is turned on and held for the remaining 6 seconds of the 9 second ramp. The reactor was maintained at this condition for 3 seconds.

在E/MEE部分的燈103、108、106、105、和104同時關閉,並且Tedlar袋在反應器斷電之前關閉。反應器被斷電。反應器保持在該狀態,連續氣流 27 秒。關閉所有剩餘的燈並且氣流繼續240秒。Lamps 103, 108, 106, 105, and 104 in the E/MEE section were turned off simultaneously, and the Tedlar bag was turned off before the reactor was powered down. The reactor was powered off. The reactor was held in this state with continuous gas flow for 27 seconds. All remaining lights were turned off and air flow continued for 240 seconds.

此處氫氣分析的目的是在多種實驗條件下收集氣體樣本並分析目標物質的含量,特別是氫氣(H 2)。選擇並採樣了八種實驗條件,其目標是:1)增加/改變氫氣產量,2)提供差異氣體採樣以識別實驗時間內氫氣產量的變化,以及3)減少載氣流量以顯示更大比例的氫氣產量。實驗條件包括GSA或LA M/M運行計劃基礎的變化、冷或熱脫氣爐啟動以及短波紫外線(SUV)燈的使用。對於每個實驗條件,運行十個MSP-20X Lot 2006碳樣本(每個 100 mg)。在每次運行期間將一到兩個氣體樣本收集到Tedlar ®袋(3或12 L)中。將28個實驗氣體樣本和兩個標準氣體樣本泵入不銹鋼(SS)罐中,在Airborne Labs (Somerset, NJ) 使用氣相色譜放電電離檢測器(GC-DID) 製程進行獨立分析。 The purpose of hydrogen analysis here is to collect gas samples and analyze the content of target substances, especially hydrogen (H 2 ), under various experimental conditions. Eight experimental conditions were selected and sampled with the goals of: 1) increasing/changing hydrogen production, 2) providing differential gas sampling to identify changes in hydrogen production over the time of the experiment, and 3) reducing carrier gas flow to reveal a greater proportion of Hydrogen production. Experimental conditions included changes to the GSA or LA M/M operating plan basis, cold or hot degassing furnace activation, and use of short-wave ultraviolet (SUV) lamps. For each experimental condition, ten MSP-20X Lot 2006 carbon samples (100 mg each) were run. Collect one to two gas samples into Tedlar® bags (3 or 12 L) during each run. Twenty-eight experimental gas samples and two standard gas samples were pumped into stainless steel (SS) tanks for independent analysis using a Gas Chromatography Discharge Ionization Detector (GC-DID) process at Airborne Labs (Somerset, NJ).

所有氣體樣本均使用 Tedlar ®袋(3 L或12 L)收集。所有 Tedlar ®袋子都充滿載氣(N 2或Ar/Kr),並在樣本收集前大約24-72小時通過真空排空3次。最後一次清空每個袋子後,將其密封,直到準備好收集氣體。該過程通過去除Tedlar ®袋內製造過程中的任何殘留氣體來準備採樣容器。 All gas samples were collected using Tedlar® bags (3 L or 12 L). All Tedlar ® bags were filled with carrier gas ( N2 or Ar/Kr) and evacuated 3 times by vacuum approximately 24-72 hours before sample collection. After emptying each bag for the last time, seal it until you are ready to collect the gas. This process prepares the sampling container by removing any residual gas from the manufacturing process inside the Tedlar ® bag.

在實驗運行期間,採樣管線被淨化至少25秒。在此期間,將密封和準備好的Tedlar ®袋附接到採樣線上。每個袋子在25秒淨化期後打開,並在指定的收集長度內保持打開狀態,具體取決於運行計劃。在收集兩個氣體樣本的實驗運行中,使用了第二條樣線。第一個袋子上的閥門關閉,第二個袋子上的閥門打開以開始收集。 During the experimental run, the sampling line was purged for at least 25 s. During this time, attach the sealed and prepared Tedlar® bag to the sampling line. Each bag opens after a 25-second decontamination period and remains open for the specified collection length, depending on the run schedule. In an experimental run where two gas samples were collected, a second sample line was used. The valve on the first bag is closed and the valve on the second bag is opened to start collection.

將選定的樣本淨化乾淨,然後使用小型微型隔膜泵將其泵入Airborne Labs提供的500立方厘米(cubic centimeters,cc)SS罐中。這些氣瓶在2-5 psig下充滿氦氣。這是Airborne Labs的失誤,因為需要真空抽氣鋼瓶。Selected samples were purged and pumped into 500 cubic centimeters (cc) SS tanks provided by Airborne Labs using a small micro-diaphragm pump. These cylinders are filled with helium at 2-5 psig. This was a mistake by Airborne Labs, as the cylinders needed to be vacuumed.

在收集過程中,氣體從Tedlar ®袋中泵入SS罐中。附接壓力表以測量罐和管容器的最大壓力。在閥門關閉以對系統加壓之前,允許大約1 L的氣體流過SS罐以淨化容器。用樣氣吹掃系統可降低污染的可能性。 During collection, gas is pumped from the Tedlar ® bag into the SS tank. Attach a pressure gauge to measure the maximum pressure of tank and tube containers. Allow approximately 1 L of gas to flow through the SS tank to purge the vessel before the valve is closed to pressurize the system. Purge the system with sample gas to reduce the possibility of contamination.

氣相層析法(Gas chromatography,GC)採用兩種物質狀態來分離化合物:固定相(通常為固體)和氣體流動相。當將未知混合物引入系統時,混合物中的組分對兩相具有不同的親和力,因此以不同的速率通過系統。相對於其他物質,對流動相具有高親和力的組分在層析系統中移動得更快,而對固相具有高親和力的組分移動得更慢。Gas chromatography (GC) uses two states of matter to separate compounds: a stationary phase (usually a solid) and a gaseous mobile phase. When an unknown mixture is introduced into a system, the components in the mixture have different affinities for the two phases and therefore pass through the system at different rates. Components with high affinity for the mobile phase move faster through the chromatographic system relative to other substances, while components with high affinity for the solid phase move slower.

本應用中使用的固定相是分子篩。分子篩由具有大內部體積的結晶材料組成,它允許氣體分子被「吸收」到材料的內部結構中。較小的分子相對較快地進出這種內部結構,較大的分子則較慢。這種流動性差異允許較小的分子比較大的分子更快地通過管柱,並以可再現的方式分離,將一個與另一個分開。The stationary phase used in this application is a molecular sieve. Molecular sieves consist of crystalline materials with a large internal volume, which allows gas molecules to be "absorbed" into the internal structure of the material. Smaller molecules move in and out of this internal structure relatively quickly, larger molecules more slowly. This difference in mobility allows smaller molecules to pass through the column faster than larger molecules and separate in a reproducible manner, separating one from the other.

熱導檢測器 (Thermal conductivity detectors,TCD)在加熱的燈絲上產生基於電信號的氣流差熱傳導。電子設備在燈絲上保持恆定電流。氣體成分的變化會導致電流的變化,該電流會增加或減少,以保持恆定的溫度。這種電流差異可以在色譜中測量並表示為曲線或峰值。計算峰下的測量面積並表示為操作員選擇的量。Thermal conductivity detectors (TCD) generate differential heat conduction based on an electrical signal across a heated filament. Electronics maintain a constant current through the filament. A change in gas composition causes a change in electrical current, which increases or decreases to maintain a constant temperature. This current difference can be measured in a chromatogram and represented as a curve or a peak. The measured area under the peak is calculated and expressed as an operator-selected quantity.

放電離子化檢測器(Discharge ionization detectors,DID)使用電流來離子化氣體種類(例如氦氣)並產生特徵光子。光子照射來自樣本的進入氣體種類。使用氣相層析管柱,不同的氣體種類在到達游離室之前被分離。由光子和可離子化氣體分子相互作用產生的電子被吸引到收集器和檢測器。然後檢測器測量樣本分析期間的電流變化。Discharge ionization detectors (DID) use an electric current to ionize a gas species (such as helium) and produce characteristic photons. Photons illuminate the incoming gas species from the sample. Using a gas chromatography column, the different gas species are separated before reaching the ion chamber. Electrons generated by the interaction of photons and ionizable gas molecules are attracted to collectors and detectors. A detector then measures the change in current during analysis of the sample.

Airborne Labs, Inc. (Somerset, NJ)使用不可燃氣體(noncombustible gases, NCG)的通用測試對氣體樣本進行了分析。NCG程序涉及使用氦氣載氣對混合物中<5000 ppm的組分使用GC-DID,對混合物中≥5000 ppm的組分使用GC-TCD。Airborne Labs的結果已通過ISO/IEC 17025:2017 認證。Gas samples were analyzed by Airborne Labs, Inc. (Somerset, NJ) using the Universal Test for noncombustible gases (NCG). The NCG procedure involves GC-DID for <5000 ppm components in the mixture and GC-TCD for ≥5000 ppm components in the mixture using a helium carrier gas. Airborne Labs results are ISO/IEC 17025:2017 certified.

使用不同的運行計劃、SUV的使用、以及載氣類型和流量,在八種不同的實驗條件下處理了十個100毫克(mg)碳樣本。在總共80個碳樣本中,總共收集了120個氣體樣本用於使用Tedlar ®袋子(3 L或12 L)進行分析。 Ten 100 milligram (mg) carbon samples were processed under eight different experimental conditions using different run schedules, use of SUVs, and carrier gas types and flows. Out of a total of 80 carbon samples, a total of 120 gas samples were collected for analysis using Tedlar® bags (3 L or 12 L).

在三個 GSA運行期間,總共收集了30個氣體樣本。在對氣體管線進行25秒淨化後開始收集氣體。收集持續時間在EM場變化期間捕獲氣體的35秒和整個真空期間捕獲氣體的4分鐘之間交替。在前三種條件類型下,每個碳樣本僅收集一個樣本。四個GSA樣本被提交給Airborne Labs進行進一步的NCG測試。A total of 30 gas samples were collected during the three GSA runs. Gas collection began after a 25 second purge of the gas line. Collection duration alternated between 35 s of gas trapped during EM field changes and 4 min of gas trapped throughout the vacuum. Under the first three condition types, only one sample per carbon sample was collected. Four GSA samples were submitted to Airborne Labs for further NCG testing.

在使用氮氣作為載氣的三個LA M/M運行計劃期間,總共收集了50個氣體樣本。在兩次LA M/M運行計劃中,使用氬氪混合物作為載氣,共收集了40個氣體樣本。在對氣體管線進行25秒淨化後開始收集氣體。如果收集了一個樣本,則持續時間為173秒。如果收集了兩個樣本,第一個是85秒,第二個是88秒。A total of 50 gas samples were collected during the three LA M/M run programs using nitrogen as the carrier gas. A total of 40 gas samples were collected during two planned LA M/M runs using a mixture of argon and krypton as the carrier gas. Gas collection began after a 25 second purge of the gas line. If one sample is collected, the duration is 173 seconds. If two samples are collected, the first is 85 seconds and the second is 88 seconds.

在116個可行的實驗氣體樣本中,有28個被提交給Airborne Labs,以使用不可燃氣體綜合測試對氫、氧、氮、氬、和氪進行進一步的定量分析。在送至Airborne Labs進行NCG測試的這 28 個生產氣體樣本中,有12個樣本產生了顯著的氫氣濃度,氮氣樣本為7.7-27 ppm(表4),氬氣樣本為1-10 ppm(表5)。這些結果不同於報告的大氣中氫氣濃度約為0.6 ppm。在分析的20個樣本中,有9個的氫氣濃度超過了氮氣分析證書上報告的2 ppm雜質限值。在20個N 2氣體樣本中,15個的氬含量 ≤100 ppm,在研究級氮氣的允許濃度範圍內。在氬/氪混合物中,對於這兩種氣體的分析證書中,沒有氫濃度被報告為雜質。 Of the 116 viable experimental gas samples, 28 were submitted to Airborne Labs for further quantitative analysis of hydrogen, oxygen, nitrogen, argon, and krypton using the non-combustible gas composite test. Of the 28 produced gas samples sent to Airborne Labs for NCG testing, 12 produced significant hydrogen concentrations ranging from 7.7-27 ppm for nitrogen samples (Table 4) and 1-10 ppm for argon samples (Table 4). 5). These results differ from reported atmospheric hydrogen concentrations of approximately 0.6 ppm. Of the 20 samples analyzed, nine had hydrogen concentrations that exceeded the 2 ppm impurity limit reported on the nitrogen certificate of analysis. Of the 20 N2 gas samples, 15 had an argon content of ≤100 ppm, which is within the allowable concentration range for research-grade nitrogen. In argon/krypton mixtures, no hydrogen concentration is reported as an impurity in the certificates of analysis for these two gases.

在總共20個N 2樣本SS氣罐中,經過測試的兩個被拒絕。結果中的氬氧比用於檢測氮氣樣本中可能存在的大氣污染。氬氣與氧氣濃度為0.934 ± 0.002 %vol Ar:20.95 ± 0.32 %vol O 2的樣本被拒絕。這些界限是使用觀察到的大氣樣本組中氧和氬濃度分析的變化來建立的。拒絕樣本的氬濃度>100 ppm和氧氣濃度>1 %vol。當從Airborne Labs運出時,被拒絕的坯料在SS 罐上也有打開的閥門。樣本和氣體空白都沒有報告氫氣濃度> 2 ppm。 Out of a total of 20 N2 sample SS cylinders, the two tested were rejected. The argon to oxygen ratio in the results is used to detect possible atmospheric contamination in the nitrogen samples. Samples with argon and oxygen concentrations of 0.934 ± 0.002 %vol Ar: 20.95 ± 0.32 %vol O2 were rejected. These bounds were established using observed variations in oxygen and argon concentration analysis across groups of atmospheric samples. Reject samples with argon concentrations > 100 ppm and oxygen concentrations > 1 %vol. The rejected billets also had open valves on the SS tanks when shipped from Airborne Labs. Neither the sample nor the gas blank reported a hydrogen concentration > 2 ppm.

報告的數據表明,LA M/M在氮氣中經過短波紫外線處理後的氫檢測具有一定的可重複性。報告的最高氫氣濃度為27 ppm,對應於報告的氧氣濃度為24%vol,比大氣氧氣高3%以上,而氬氣濃度為4700 ppm,幾乎是大氣濃度的一半。這個樣本的結果突出顯示大氣不太可能是報告的氣體種類的來源。對於同一運行的兩組樣本(即GH8030A/B、GH8050A/B),最後88秒的氫和氧濃度明顯高於前85秒。The reported data show some reproducibility in the hydrogen detection of LA M/M after short-wave UV treatment in nitrogen. The highest reported hydrogen concentration of 27 ppm corresponds to a reported oxygen concentration of 24% vol, more than 3% higher than atmospheric oxygen, while argon concentration of 4700 ppm is almost half the atmospheric concentration. The results for this sample highlight that the atmosphere is an unlikely source of the reported gas species. For two sets of samples from the same run (i.e. GH8030A/B, GH8050A/B), the hydrogen and oxygen concentrations in the last 88 seconds were significantly higher than in the first 85 seconds.

對於使用氬氣/氪氣混合物進行的實驗,僅在1/2流量條件下觀察到氫氣濃度增加(≥ 1 ppm)。在Airborne Labs進行分析的4次總運行中,有3次檢測出氫氣。值得注意的是,最大濃度是在運行收集的前83秒內測量的,與在氮氣運行中看到的情況相反。For experiments performed with argon/krypton mixtures, an increase in hydrogen concentration (≥ 1 ppm) was only observed at 1/2 flow conditions. Hydrogen was detected in 3 out of 4 total runs analyzed by Airborne Labs. Of note, the maximum concentration was measured within the first 83 s of run collection, contrary to what was seen in the nitrogen run.

與Airborne Labs的後續對話表明,氦的存在量很大,有時甚至很高。在對所有結果進行二次審查後,他們確保DID和TCD報告的所有數據均符合QA/QC的通過標準。Follow-up conversations with Airborne Labs indicated that helium was present in significant, sometimes high, quantities. After a secondary review of all results, they ensured that all data reported by DID and TCD met the pass criteria for QA/QC.

表:來自GC-DID(Airborne Labs, Inc.)報告的使用氫氣檢測的氮氣運行的實驗樣本結果。從20個樣本的NCG測試中,9個樣本產生了顯著濃度的氫氣(>2 ppm)。由於氬氣:氧氣比、總濃度和已知的空白樣本罐閥門完整性問題,氮氣空白和一個樣本被拒絕。 樣本 實驗程序 氫氣 ppmppm 氬氣:氧氣 GH8008 GSA, N 2, 熱, SUV 0.7   4/89 (1/22.25) GH8014 GSA, N 2, 熱, SUV 0.9 <0 GH8021 GSA, N 2, 熱, No SUV 0.3 <0 GH8023 GSA, N 2, 熱, No SUV 1.2   3/77 GH8030A LA M/M, N 2, 冷, SUV <0.2 <0 GH8030B LA M/M, N 2, 冷, SUV 27   1/52 GH8031A LA M/M, N 2, 冷, SUV 14 <0 GH8031B LA M/M, N 2, 熱, SUV 11 <0 GH8038 LA M/M, N 2, 熱, SUV 1.2 <0 GH8039 LA M/M, N 2, 熱, SUV 9.7 <0 GH8040 LA M/M, N 2, 熱, SUV 10 <0 GH8041 LA M/M, N 2, 熱, SUV 7.7 <0 GH8042 LA M/M, N 2, 熱, SUV 11 <0 GH8044 LA M/M, N 2, 熱, SUV 9.2 <0 GH8048A LA M/M, N 2, 熱, No SUV 0.6 <0 GH8048B LA M/M, N 2, 熱, No SUV 0.5   2/55 GH8049A LA M/M, N 2, 熱, No SUV 0.6 0      GH8049B LA M/M, N 2, 熱, No SUV <0.2 <0 GH8050A LA M/M, N 2, 熱, No SUV 0.5 <0 GH8050B LA M/M, N 2, 熱, No SUV 9.8 <0 GH071522BLK1 N 2空白 <0.2   1/6 Table: Experimental sample results from a nitrogen run with hydrogen detection reported by GC-DID (Airborne Labs, Inc.). From the NCG test of 20 samples, 9 samples produced significant concentrations of hydrogen (>2 ppm). A nitrogen blank and one sample were rejected due to argon:oxygen ratio, total concentration, and known blank sample tank valve integrity issues. sample Experimental procedure Hydrogen ppm ppm Argon: Oxygen GH8008 GSA, N 2 , HOT, SUV 0.7 4/89 (1/22.25) GH8014 GSA, N 2 , HOT, SUV 0.9 <0 GH8021 GSA, N 2 , HOT, No SUV 0.3 <0 GH8023 GSA, N 2 , HOT, No SUV 1.2 3/77 GH8030A LA M/M, N 2 , cold, SUV <0.2 <0 GH8030B LA M/M, N 2 , cold, SUV 27 1/52 GH8031A LA M/M, N 2 , cold, SUV 14 <0 GH8031B LA M/M, N 2 , HOT, SUV 11 <0 GH8038 LA M/M, N 2 , HOT, SUV 1.2 <0 GH8039 LA M/M, N 2 , HOT, SUV 9.7 <0 GH8040 LA M/M, N 2 , HOT, SUV 10 <0 GH8041 LA M/M, N 2 , HOT, SUV 7.7 <0 GH8042 LA M/M, N 2 , HOT, SUV 11 <0 GH8044 LA M/M, N 2 , HOT, SUV 9.2 <0 GH8048A LA M/M, N 2 , HOT, No SUV 0.6 <0 GH8048B LA M/M, N 2 , HOT, No SUV 0.5 2/55 GH8049A LA M/M, N 2 , HOT, No SUV 0.6 0 GH8049B LA M/M, N 2 , HOT, No SUV <0.2 <0 GH8050A LA M/M, N 2 , HOT, No SUV 0.5 <0 GH8050B LA M/M, N 2 , HOT, No SUV 9.8 <0 GH071522BLK1 N 2 blank <0.2 1/6

表2:來自GC-DID(Airborne Labs, Inc.)報告的氬/氪氣運行和氫氣檢測的實驗樣本結果。 從8個樣本的NCG測試中,3個樣本產生顯著濃度的氫氣(≥ 1 ppm)。 樣本 實驗程序 氫氣ppm ppm GH8058A LA M/M, Ar/Kr, 熱, SUV <0.2 23000 GH8058B LA M/M, Ar/Kr, 熱, SUV <0.2 18000 GH8059A LA M/M, Ar/Kr, 熱, SUV <0.2 21000 GH8059B LA M/M, Ar/Kr, 熱, SUV <0.2 25000 GH8068A LA M/M, Ar/Kr, 熱, SUV, ½ Flow <0.2 22000 GH8068B LA M/M, Ar/Kr, 熱, SUV, ½ Flow 1 26000 GH8069A LA M/M, Ar/Kr, 熱, SUV, ½ Flow 10 23000 GH8069B LA M/M, Ar/Kr, 熱, SUV, ½ Flow 1 25000 GH071522BLK2 Ar/Kr 空白 <0.2 27000 Table 2: Experimental sample results from argon/krypton run and hydrogen detection reported by GC-DID (Airborne Labs, Inc.). From the NCG test of 8 samples, 3 samples produced significant concentrations of hydrogen (≥ 1 ppm). sample Experimental procedure hydrogen ppm Krypton ppm GH8058A LA M/M, Ar/Kr, Heat, SUV <0.2 23000 GH8058B LA M/M, Ar/Kr, Heat, SUV <0.2 18000 GH8059A LA M/M, Ar/Kr, Heat, SUV <0.2 21000 GH8059B LA M/M, Ar/Kr, Heat, SUV <0.2 25000 GH8068A LA M/M, Ar/Kr, Hot, SUV, ½ Flow <0.2 22000 GH8068B LA M/M, Ar/Kr, Heat, SUV, ½ Flow 1 26000 GH8069A LA M/M, Ar/Kr, Heat, SUV, ½ Flow 10 23000 GH8069B LA M/M, Ar/Kr, Heat, SUV, ½ Flow 1 25000 GH071522BLK2 Ar/Kr Blank <0.2 27000

下表提供了更多結果:The table below provides more results:

本文提及的專利和科學文獻確立了本領域技術人員可獲得的知識。本文引用的所有美國專利和已公開或未公開的美國專利申請均以引用的方式併入本文。本文引用的所有公開的外國專利和專利申請均通過引用併入本文。本文引用的所有其他已發表的參考文獻、文件、手稿、和科學文獻均通過引用併入本文。The patent and scientific literature mentioned herein establishes the knowledge available to those skilled in the art. All US patents and published or unpublished US patent applications cited herein are hereby incorporated by reference. All published foreign patents and patent applications cited herein are hereby incorporated by reference. All other published references, documents, manuscripts, and scientific literature cited herein are hereby incorporated by reference.

儘管本發明已參照其較佳實施例進行了具體展示和描述,但本領域技術人員將理解,在不背離所附申請專利範圍所涵蓋的本發明範圍的情況下,可以對其中的形式和細節進行各種改變.在說明書和申請專利範圍中呈現的數值被理解為近似值(例如,大約或大約),如將由本領域普通技術人員在該值的上下文中確定的。例如,規定值可以理解為在規定值的10%以內,除非本領域普通技術人員另外理解,例如必須是整數的值。While the invention has been particularly shown and described with reference to preferred embodiments thereof, it will be understood by those skilled in the art that changes may be made in form and detail thereof without departing from the scope of the invention which is covered by the appended claims. Various changes are made. Numerical values presented in the specification and claims are to be understood as approximations (eg, approximately or approximately) as would be determined by one of ordinary skill in the art in the context of that value. For example, a stated value may be understood as being within 10% of the stated value, unless otherwise understood by one of ordinary skill in the art, eg, must be an integer value.

101、201、401、1520、1532、1541、1551、1564、1577、1591、15107、907:進氣口 102、410:管線 103、104、105、106、107、108、109、122、909:燈 110、209、409、1519、1531、1540、1578、1592、15108、908:出氣口 111、411:基板 112、412:支撐件 113、413:樞軸 120:線圈 202、1536、1548、1558、1702、1707、1714、905:反應器主體 203:玻璃料 204:裝料材料 205:蓋 206:杯 207:安全殼/封閉端管 208:導電線圈 210:電源法蘭 211、424、429、1507、1515、1527、1549、1562、1574、1588、15104:X射線源 212、426、427:雷射 213:靶保持器 221:氣體源 222:E/MEE 402、403、404、405、406、408、1501、1502、1503、1504、1505、1506、1509、1510、1511、1512、1513、1514、1521、1522、1523、1524、1525、1526、1560、1561、1565、1566、1567、1568、1569、1570、1579、1580、1581、1582、1583、1584、1593、1594、1595、1596、1597、1598:筆形燈 407:線圈 412:支撐件 415:外殼 426、427:光源 428:濾光器 902:上部玻璃料 904:下部玻璃料 906:氣體傳輸器 911:線圈 1508、1534、1543、1553:反應器室 1516、1517、1518、1528、1529、1530、1537、1538、1539、1545、1546、1574、1555、1556、1557、1571、1572、1573、1585、1586、1587、1599、15100、15101、15102、15103:RA 線圈 1533、1544、1554:第二(頂部)玻璃料 1535、1542、1553:第一(底部)玻璃料 1536:反應器主體 1550、1563:元件 15112、1559:水平筆形燈 1560、1561:垂直筆形燈 1575、1589、15105:第一雷射 1576、1590、15106:第二雷射 1701:反應器桿 1703、1711、1718:第二石英玻璃料 1705、1709、1716:石英玻璃料 1706:氣體排放開口 1708、1715、901:石墨杯 1710、1717、903:碳 1712、1719:蓋 1713:箔 15109:外支撐件 15110:內支撐件 15111:反應器連接器 101, 201, 401, 1520, 1532, 1541, 1551, 1564, 1577, 1591, 15107, 907: air inlet 102, 410: pipeline 103, 104, 105, 106, 107, 108, 109, 122, 909: lights 110, 209, 409, 1519, 1531, 1540, 1578, 1592, 15108, 908: air outlet 111, 411: Substrate 112, 412: support 113, 413: Pivot 120: Coil 202, 1536, 1548, 1558, 1702, 1707, 1714, 905: Reactor body 203: glass frit 204: charging material 205: cover 206: Cup 207: Containment vessel/closed end pipe 208: conductive coil 210: Power supply flange 211, 424, 429, 1507, 1515, 1527, 1549, 1562, 1574, 1588, 15104: X-ray source 212, 426, 427: laser 213: target holder 221: gas source 222:E/MEE 402, 403, 404, 405, 406, 408, 1501, 1502, 1503, 1504, 1505, 1506, 1509, 1510, 1511, 1512, 1513, 1514, 1521, 1522, 1523, 1524, 1525, 1526, 1560, 1561, 1565, 1566, 1567, 1568, 1569, 1570, 1579, 1580, 1581, 1582, 1583, 1584, 1593, 1594, 1595, 1596, 1597, 1598: pen lights 407: Coil 412: support 415: shell 426, 427: light source 428: Optical filter 902: upper glass frit 904: Lower glass frit 906: gas transmitter 911: Coil 1508, 1534, 1543, 1553: Reactor chamber 1516, 1517, 1518, 1528, 1529, 1530, 1537, 1538, 1539, 1545, 1546, 1574, 1555, 1556, 1557, 1571, 1572, 1573, 1585, 1586, 1587, 1599, 15100, 15101 , 15102, 15103:RA Coil 1533, 1544, 1554: Second (top) frit 1535, 1542, 1553: first (bottom) frit 1536: Reactor body 1550, 1563: components 15112, 1559: horizontal pen light 1560, 1561: vertical pen lights 1575, 1589, 15105: the first laser 1576, 1590, 15106: the second laser 1701: Reactor Rod 1703, 1711, 1718: Second Quartz Frit 1705, 1709, 1716: Quartz glass frit 1706: Gas discharge opening 1708, 1715, 901: graphite cup 1710, 1717, 903: Carbon 1712, 1719: cover 1713: Foil 15109: Outer support 15110: Inner support 15111: Reactor Connector

本發明的上述和其他目的、特徵和優點將從下面對本發明較佳實施例的更具體描述中變得明顯,如所附圖式中所示,其中類似的元件符號在不同的視圖中指代相同的部分。圖式不一定按比例繪製,而是強調說明本發明的原理。The above and other objects, features and advantages of the present invention will become apparent from the following more particular description of preferred embodiments of the present invention, as shown in the accompanying drawings, wherein like reference numerals refer to the same reference numerals in the different views. part. The drawings are not necessarily to scale, emphasis instead being placed upon illustrating the principles of the invention.

圖1是本發明的E/MEE的立體圖。Fig. 1 is a perspective view of the E/MEE of the present invention.

圖2A和2C示出反應器組件部件。圖2B是圖2A的反應器組件部件的放大圖。Figures 2A and 2C show reactor assembly components. Figure 2B is an enlarged view of the reactor assembly components of Figure 2A.

圖3A、圖3B、圖3C、圖3D、和圖3E提供了可以在反應器組件中使用的線圈的五個視圖。Figures 3A, 3B, 3C, 3D, and 3E provide five views of coils that may be used in a reactor assembly.

圖4A是本發明用於碳預處理的E/MEE的立體圖。圖4B示出反應器組件部件。Figure 4A is a perspective view of an E/MEE of the present invention for carbon pretreatment. Figure 4B shows the reactor assembly components.

圖5A說明標準線圈的一種構造。圖5B示出反向磁場線圈的一種構形。Figure 5A illustrates one configuration of a standard coil. Figure 5B shows one configuration of a reverse field coil.

圖6A和6B是兩個複合反應器組件的兩個實施例的圖示。圖6A示出具有銅主體、碳石墨杯和碳石墨蓋的複合反應器。圖6B示出具有碳石墨主體以及蓋和金屬箔邊界的複合反應器。Figures 6A and 6B are diagrams of two embodiments of two composite reactor assemblies. Figure 6A shows a composite reactor with a copper body, a carbon-graphite cup, and a carbon-graphite cover. Figure 6B shows a composite reactor with a carbon graphite body and a lid and metal foil border.

圖7A至7I示出根據本發明的各種反應器組件視圖。Figures 7A to 7I show various reactor assembly views according to the present invention.

圖8A至8C和9是反應器變化的圖示。8A to 8C and 9 are illustrations of reactor variations.

101:進氣口 101: air inlet

102:管線 102: pipeline

103、104、105、106、107、108、109、122:燈 103, 104, 105, 106, 107, 108, 109, 122: lights

110:出氣口 110: air outlet

111:基板 111: Substrate

112:支撐件 112: support

113:樞軸 113: Pivot

120:線圈 120: Coil

Claims (52)

一種生產產物氣體的製程,其包括以下步驟: (a) 向一電磁包埋設備添加一進料氣體: (b) 將該進料氣體暴露於至少一個E/MEE光源; (c) 將來自步驟(b)的該進料氣體引導至一反應器組件,該反應器組件包括: 一氣體進氣口和一或多個氣體出氣口; 一反應器室,該反應器室包含設置在一杯內的奈米多孔碳,並且可選地用一蓋覆蓋; 一第一多孔玻璃料,該第一多孔玻璃料限定設置在該杯內的該反應器室的底板, 一第二多孔玻璃料,該第二多孔玻璃料限定該反應器室的頂部;其中每個多孔玻璃料具有足以允許氣體滲透到該反應器室中的孔隙率; 一反應器頂部空間,該反應器頂部空間設置在該反應器室上方; 至少一個RA線圈,該至少一個RA線圈圍繞該反應器室和/或該反應器頂部空間且可操作地連接到一供電設備,其中一計算機處理單元被配置為控制該RA線圈的該供電設備; (d) 使該奈米多孔碳粉末經受諧波圖案化以例示一材料; (e) 收集包含該材料的該產物氣體;和 (f) 將該材料與該產物氣體隔離。 A process for producing product gas, comprising the steps of: (a) To add a feed gas to an electromagnetic embedding device: (b) exposing the feed gas to at least one E/MEE light source; (c) directing the feed gas from step (b) to a reactor assembly comprising: a gas inlet and one or more gas outlets; a reactor chamber containing nanoporous carbon disposed within a cup and optionally covered with a lid; a first porous frit defining a floor of the reactor chamber disposed within the cup, a second porous frit defining the top of the reactor chamber; wherein each porous frit has a porosity sufficient to allow gas to permeate into the reactor chamber; a reactor headspace disposed above the reactor chamber; at least one RA coil surrounding the reactor chamber and/or the reactor headspace and operatively connected to a power supply, wherein a computer processing unit is configured to control the power supply of the RA coil; (d) subjecting the nanoporous carbon powder to harmonic patterning to instantiate a material; (e) collecting the product gas containing the material; and (f) Isolate the material from the product gas. 如請求項1所述之製程,其中,該杯由石墨組成。The process according to claim 1, wherein the cup is made of graphite. 如請求項1或2所述之製程,其中,該蓋由石墨、鉑、鈀或釕組成。The process according to claim 1 or 2, wherein the cover is made of graphite, platinum, palladium or ruthenium. 如請求項1至3中任一項所述之製程,進一步包括包圍該杯的箔。The process of any one of claims 1 to 3, further comprising a foil surrounding the cup. 如請求項4所述之製程,其中,該箔由鉑組成。The process of claim 4, wherein the foil is composed of platinum. 如請求項1所述之製程,進一步包括一設置在該反應器室下方和該氣體進氣口上方的桿。The process of claim 1, further comprising a rod disposed below the reactor chamber and above the gas inlet. 如請求項6所述之製程,該桿由石英組成。According to the process described in claim 6, the rod is composed of quartz. 如請求項1所述之製程,其中,該反應器室的大小可容納約100 mg 奈米多孔碳。The process of claim 1, wherein the reactor chamber is sized to accommodate about 100 mg of nanoporous carbon. 如請求項1所述之製程,其中,該進料氣體選自空氣、氧氣、氫氣、氦氣、氮氣、氖氣、氬氣、氪氣、氙氣、一氧化碳、二氧化碳、及其混合物所組成的群組。The process as described in Claim 1, wherein the feed gas is selected from the group consisting of air, oxygen, hydrogen, helium, nitrogen, neon, argon, krypton, xenon, carbon monoxide, carbon dioxide, and mixtures thereof Group. 如請求項1所述之製程,其中,該奈米多孔碳包括具有至少95重量百分比的碳(金屬基)的石墨烯,其質量平均直徑為1 µm至5 mm且超微孔表面積為約100至3000 m 2/g。 The process as claimed in claim 1, wherein the nanoporous carbon comprises graphene having at least 95 weight percent carbon (metal-based) with a mass average diameter of 1 µm to 5 mm and an ultramicroporous surface area of about 100 to 3000 m 2 /g. 如請求項1所述之製程,其中,該奈米多孔碳已經脫氣。The process according to claim 1, wherein the nanoporous carbon has been degassed. 如請求項1所述之製程,其中,該奈米多孔碳材料的特徵在於酸調理,其中該酸選自HCl、HF、HBr、HI、硫酸、磷酸、碳酸、和硝酸,且殘留水含量小於在室溫下暴露於小於40% RH(relative humidity, RH)的相對濕度下實現。The process of claim 1, wherein the nanoporous carbon material is characterized by acid conditioning, wherein the acid is selected from HCl, HF, HBr, HI, sulfuric acid, phosphoric acid, carbonic acid, and nitric acid, and the residual water content is less than Achieved at room temperature exposed to a relative humidity of less than 40% RH (relative humidity, RH). 如請求項1所述之製程,其中,該RA線圈是一感應線圈。The process according to claim 1, wherein the RA coil is an induction coil. 如請求項1所述之製程,其中,一第一RA線圈包括銅繞線,一第二RA線圈包括銅線和銀線的編織物,一第三RA線圈是鉑線繞線並且每個RA線圈被配置為產生磁場,並且其中每個供電設備獨立提供交流和/或直流電流。The process of claim 1, wherein a first RA coil comprises copper wire, a second RA coil comprises a braid of copper wire and silver wire, a third RA coil is platinum wire wound and each RA The coils are configured to generate a magnetic field, and wherein each power supply independently provides AC and/or DC current. 如請求項1所述之製程,其中,該反應器組件還包括至少一個雷射,並且其中每個雷射的特徵在於不同的波長並且指向該奈米多孔碳材料,並且該製程還包括為每個雷射供電。The process of claim 1, wherein the reactor assembly further comprises at least one laser, and wherein each laser is characterized by a different wavelength and is directed at the nanoporous carbon material, and the process further comprises for each powered by a laser. 如請求項1所述之製程,其中,該反應器組件還包括第一RA燈對,該第一RA燈對經配置在由該反應器室的中心軸和第一半徑限定的第一平面中;第二RA燈對,該第二RA燈對經配置在由該反應器室的該中心軸和第二半徑限定的第二平面;和第三RA燈對,該第三RA燈對經配置在由該反應器室的該中心軸和第三半徑限定的第三平面中,並且該製程還包括為每個RA燈供電。The process of claim 1, wherein the reactor assembly further comprises a first pair of RA lamps disposed in a first plane defined by a central axis and a first radius of the reactor chamber a second pair of RA lamps configured in a second plane defined by the central axis and a second radius of the reactor chamber; and a third pair of RA lamps configured to In a third plane defined by the central axis and a third radius of the reactor chamber, and the process also includes powering each RA lamp. 如請求項1所述之製程,其中,該E/MEE封裝在一不透明的外殼中。The process according to claim 1, wherein the E/MEE is packaged in an opaque casing. 如請求項1所述之方法,其中,該氣體管線在50 cm到5 m之間,直徑在2 mm到25 cm之間。The method according to claim 1, wherein the gas pipeline is between 50 cm and 5 m in diameter, and has a diameter between 2 mm and 25 cm. 如請求項1所述之生產產物氣體的製程,其中,該電磁包埋設備包括至少5個E/MEE筆形燈,其位於沿包含該進料氣體的一氣體管線上; 每個E/MEE筆形燈獨立放置,使其縱軸(i)平行於一內部氣體管線,(ii)徑向地設置在與該內部氣體管線的一垂直平面中,或(iii)垂直於沿該內部氣體管線的一縱向軸線創建的平面或沿該內部氣體管線的一垂直軸線;和 每個E/MEE筆形燈獨立地固定在一個或多個樞軸上,該樞軸允許相對於x軸、y軸和/或z軸在大約0到360度之間旋轉,其中(i)該x軸被定義為平行於該氣體管線及其垂直平面的軸,(ii)該y軸被定義為垂直於該氣體管線並平行於其水平面的軸,以及(iii)該z軸被定義為垂直於該氣體管線並平行於其垂直平面的軸。 The process for producing product gas as claimed in claim 1, wherein the electromagnetic embedding equipment comprises at least 5 E/MEE pencil lamps located along a gas pipeline containing the feed gas; Each E/MEE penlight is independently positioned with its longitudinal axis (i) parallel to an internal gas line, (ii) radially disposed in a plane perpendicular to the internal gas line, or (iii) perpendicular to the a plane created by a longitudinal axis of the internal gas line or along a vertical axis of the internal gas line; and Each E/MEE penlight is independently fixed on one or more pivots that allow rotation between approximately 0 and 360 degrees relative to the x-, y-, and/or z-axes, where (i) the The x-axis is defined as the axis parallel to the gas line and its vertical plane, (ii) the y-axis is defined as the axis perpendicular to the gas line and parallel to its horizontal plane, and (iii) the z-axis is defined as the vertical The axis on the gas line and parallel to its vertical plane. 如請求項19所述之製程,其中,至少一個該E/MEE筆形燈是氖燈,至少一個該E/MEE筆形燈是氪燈,且至少一個該E/MEE筆形燈是氬燈。The process of claim 19, wherein at least one of the E/MEE pencil lamps is a neon lamp, at least one of the E/MEE pencil lamps is a krypton lamp, and at least one of the E/MEE pencil lamps is an argon lamp. 如請求項1所述之製程,其中,該進料氣體由氮氣和氫氣組成。The process according to claim 1, wherein the feed gas is composed of nitrogen and hydrogen. 如請求項1所述之製程,其中,該進料氣體包含至少99%的氮氣。The process of claim 1, wherein the feed gas comprises at least 99% nitrogen. 如請求項1所述之製程,其中,該進料氣體包含至少約99.9%的氮氣。The process of claim 1, wherein the feed gas comprises at least about 99.9% nitrogen. 如請求項1所述之製程,其中,該進料氣體是空氣。The process according to claim 1, wherein the feed gas is air. 如前述任一請求項所述之製程,其中,該產物氣體中的氫含量高於該進料氣體。The process as claimed in any one of the preceding claims, wherein the hydrogen content of the product gas is higher than that of the feed gas. 如請求項25所述之製程,其中,該產物氣體包含至少約1% vol的氫。The process of claim 25, wherein the product gas comprises at least about 1% vol hydrogen. 如請求項25所述之製程,其中,該產物氣體進一步包括氦氣、氬氣、氖氣、及其組合。The process of claim 25, wherein the product gas further comprises helium, argon, neon, and combinations thereof. 如請求項25所述之製程,其中,氦氣、氬氣、氖氣、及其組合包含至少1% vol的產物氣體。The process of claim 25, wherein helium, argon, neon, and combinations thereof comprise at least 1% vol of product gas. 如請求項25所述之製程,其中,該產物氣體包含小於約0.5 vol%的CO 2,例如小於100 ppm CO 2The process of claim 25, wherein the product gas comprises less than about 0.5 vol% CO2 , such as less than 100 ppm CO2 . 如請求項21所述之方法,其中,該產物氣體包含至少約1% vol的氧氣、氦氣、氬氣、氖氣、及其組合。The method of claim 21, wherein the product gas comprises at least about 1% vol of oxygen, helium, argon, neon, and combinations thereof. 一種生產產物氣體的製程,其包括以下步驟: (a)將一進料氣體添加到一電磁包埋設備,該電磁包埋設備包括: 一包含該進料氣體的氣體管線; 至少一個E/MEE筆形燈位於該氣體管線下方,至少一個E/MEE筆形燈位於該氣體管線上方,和至少一個E/MEE筆形燈位於該氣體管線一側; 其中每個E/MEE筆形燈獨立可旋轉地安裝,沿該氣體管線的長度定位; 一可操作地連接到每個筆形燈的電源; 一中央處理單元,該中央處理單元經配置以獨立控制每個E/MEE筆形燈的供電和每個E/MEE筆形燈的旋轉位置; (b)為每個筆形燈供電,從而使該進料氣體經受電磁輻射;可選地旋轉一或多個燈; (c)將來自步驟(b)的該進料氣體引導至一反應器組件,該反應器組件包括: 一個氣體進氣口和一個或多個氣體出氣口; 一反應器室,該反應器室包含佈置在一杯內的奈米多孔碳,並且可選地用一蓋覆蓋; 一第一多孔玻璃料,該第一多孔玻璃料限定佈置在該杯內的該反應器室的底板, 一第二多孔玻璃料,該第二多孔玻璃料限定該反應器室的頂部並設置在該蓋的下方;其中每個多孔玻璃料具有足以允許氣體滲透到該反應器室中並包含奈米多孔碳的孔隙率; 一反應器頂部空間,設置在該反應器蓋上方; 至少一個RA線圈,圍繞該反應器室和/或該反應器頂部空間且可操作地連接到供電設備,其中一計算機處理單元被配置為控制該RA線圈的該電源; (d)將每個RA供電到第一電磁能階; (e)使該奈米多孔碳粉末經受諧波圖案化以例示一材料;和 (f)收集包含該材料的該產物氣體。 A process for producing product gas, comprising the steps of: (a) adding a feed gas to an electromagnetic embedding apparatus comprising: a gas line containing the feed gas; at least one E/MEE penlight is located below the gas line, at least one E/MEE penlight is located above the gas line, and at least one E/MEE penlight is located to the side of the gas line; wherein each E/MEE penlight is independently rotatably mounted, positioned along the length of the gas line; a power source operatively connected to each penlight; a central processing unit configured to independently control the power supply to each E/MEE penlight and the rotational position of each E/MEE penlight; (b) powering each penlamp, thereby subjecting the feed gas to electromagnetic radiation; optionally rotating one or more lamps; (c) directing the feed gas from step (b) to a reactor assembly comprising: a gas inlet and one or more gas outlets; a reactor chamber containing nanoporous carbon disposed within a cup and optionally covered with a lid; a first porous frit defining the floor of the reactor chamber disposed within the cup, a second porous frit defining the top of the reactor chamber and disposed below the cover; wherein each porous frit has a thickness sufficient to allow gas to permeate into the reactor chamber and comprises nano the porosity of the porous carbon; a reactor headspace disposed above the reactor head; at least one RA coil surrounding the reactor chamber and/or the reactor headspace and operatively connected to a power supply, wherein a computer processing unit is configured to control the power supply of the RA coil; (d) powering each RA to a first electromagnetic energy level; (e) subjecting the nanoporous carbon powder to harmonic patterning to instantiate a material; and (f) collecting the product gas comprising the material. 如請求項31所述之製程,其中,該材料選自氫、氧、氦、氬、氖、及其組合所組成的群組。The process of claim 31, wherein the material is selected from the group consisting of hydrogen, oxygen, helium, argon, neon, and combinations thereof. 一種通過根據前述任一請求項所述之製程產生的產物氣體。A product gas produced by a process according to any one of the preceding claims. 如請求項33所述之產物氣體,包含至少1%vol的氫氣、氮氣、和一或多種選自由氦氣、氬氣、和氖氣所組成的群組的氣體。The product gas of claim 33, comprising at least 1% vol of hydrogen, nitrogen, and one or more gases selected from the group consisting of helium, argon, and neon. 如請求項18所述之產物氣體,包含至少4%vol的氫氣、氮氣、和一種或多種選自由氦氣、氬氣、和氖氣所組成的群組的氣體。The product gas of claim 18 comprising at least 4% vol of hydrogen, nitrogen, and one or more gases selected from the group consisting of helium, argon, and neon. 如請求項20所述之產物氣體,其中,該產物氣體包含小於約0.5vol%的CO 2,例如小於100 ppm CO 2The product gas of claim 20, wherein the product gas comprises less than about 0.5 vol% CO2 , such as less than 100 ppm CO2 . 一種產物氣體,包括至少1%vol的氫氣、氮氣、和一或多種選自由氦氣、氬氣、和氖氣所組成的群組的氣體。A product gas comprising at least 1% vol of hydrogen, nitrogen, and one or more gases selected from the group consisting of helium, argon, and neon. 如請求項37所述之產物氣體,包含至少4%vol的氫氣、氮氣、和一或多種選自由氦氣、氬氣、和氖氣所組成的群組的氣體。The product gas of claim 37 comprising at least 4% by volume of hydrogen, nitrogen, and one or more gases selected from the group consisting of helium, argon, and neon. 如請求項37或38所述之產物氣體,其中,該產物氣體包含小於約0.5vol%的CO 2,例如小於100 ppm CO 2The product gas of claim 37 or 38, wherein the product gas comprises less than about 0.5 vol% CO2 , such as less than 100 ppm CO2 . 如請求項37、38、或39所述之產物氣體,進一步包含水。The product gas as claimed in claim 37, 38, or 39, further comprising water. 如請求項33所述之產物氣體,包含至少 20%vol的氧氣、氮氣、和一或多種選自由氦氣、氬氣、和氖氣所組成的群組的氣體。The product gas as described in claim 33, comprising at least 20% vol of oxygen, nitrogen, and one or more gases selected from the group consisting of helium, argon, and neon. 如請求項41所述之產物氣體,包含至少40%vol的氧氣、氮氣、和一或多種選自由氦氣、氬氣、和氖氣所組成的群組的氣體。The product gas of claim 41 comprising at least 40% vol of oxygen, nitrogen, and one or more gases selected from the group consisting of helium, argon, and neon. 如請求項41或42所述之產物氣體,進一步包含至少1vol%的氫氣。The product gas as claimed in claim 41 or 42, further comprising at least 1 vol% hydrogen. 如請求項41,42或43所述之產物氣體,進一步包含水。The product gas as claimed in claim 41, 42 or 43, further comprising water. 一種產物氣體,其包括至少20%vol的氧氣、氮氣、和一或多種選自由氦氣、氬氣、和氖氣所組成的群組的氣體。A product gas comprising at least 20% by volume of oxygen, nitrogen, and one or more gases selected from the group consisting of helium, argon, and neon. 如請求項45所述之產物氣體,包含至少40%vol的氧氣、氮氣、和一或多種選自由氦氣、氬氣和氖氣所組成的群組的氣體。The product gas of claim 45 comprising at least 40% vol of oxygen, nitrogen, and one or more gases selected from the group consisting of helium, argon, and neon. 如請求項45或46所述之產物氣體,進一步包含至少1vol%的氫氣。The product gas as claimed in claim 45 or 46, further comprising at least 1 vol% hydrogen. 如請求項45、46或47所述之產物氣體,進一步包含水。The product gas as claimed in claim 45, 46 or 47, further comprising water. 如請求項33所述之產物氣體,包含至少1%vol的水、至少1vol%的氫、至少1%vol. 氧氣、氮氣、和一或多種選自由氦氣、氬氣和氖氣所組成的群組的氣體。The product gas as described in claim 33, comprising at least 1% vol of water, at least 1 vol% of hydrogen, at least 1% vol. oxygen, nitrogen, and one or more selected from the group consisting of helium, argon and neon group of gases. 如請求項49所述之產物氣體,包含至少3%vol的水。The product gas as claimed in claim 49, comprising at least 3% vol water. 一種產物氣體,其包括至少1%vol的水、至少1vol%的氫氣、至少1%vol的氧氣、氮氣、和一或多種選自由氦氣、氬氣和氖氣所組成的群組的氣體。A product gas comprising at least 1% vol of water, at least 1 vol% of hydrogen, at least 1% vol of oxygen, nitrogen, and one or more gases selected from the group consisting of helium, argon, and neon. 如請求項51所述之產物氣體,包含至少3%vol的水。The product gas of claim 51 comprising at least 3% vol water.
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