TW202329233A - Semiconductor processing method and apparatus thereof - Google Patents

Abstract

The present disclosure provides a method for processing a semiconductor, including: providing a wafer, the wafer having a first surface and a second surface opposite to the first surface, wherein the wafer has a plurality of semiconductor devices on the first surface; pasting an adhesive film on the wafer, wherein the adhesive film has a third surface facing the first surface; fixing a frame on a fourth surface of the adhesive film opposite to the third surface; facing the second surface to a grinding wheel; and grinding the second surface of the wafer.

Description

Method and device for semiconductor processing

The present disclosure relates to a semiconductor device and a semiconductor processing method, and more particularly to a grinding method and a device thereof.

Before the wafer is diced to form chips, it needs to go through a backside grinding process. As the thickness of the wafer becomes thinner, the risk of wafer chipping during the wafer backgrinding process also increases. In order to ensure that the wafer is not damaged and cracked by thermal stress and mechanical stress during grinding, an adhesive film is generally used to stick to the wafer as a support and protection to reduce the risk of transporting fragments.

Therefore, in the existing wafer back grinding process, there is still a lot of room for improvement to improve the quality of the wafer after thinning.

Therefore, there is a need to improve the current wafer attaching method and grinding device to reduce costs and improve wafer grinding efficiency.

The above "prior art" description is only to provide background technology, and does not acknowledge that the above "prior art" description discloses the subject of this disclosure, and does not constitute the prior art of this disclosure, and any description of the above "prior art" shall not form part of this case.

An embodiment of the present disclosure provides a semiconductor processing device, including a central area and a peripheral area. The central area is used for carrying a wafer and has a first surface. The peripheral area surrounds the central area and is used to carry an adhesive film and a frame, the peripheral area has a second surface higher than the first surface, the wafer is located on a third surface of the adhesive film, and the frame is located on a first surface of the adhesive film Four surfaces, the third surface faces away from the fourth surface.

In some embodiments, the central region is substantially circular in plan view.

In some embodiments, the central area includes a first adsorption member for adsorbing the wafer, and the first adsorption member is located below the first surface.

In some embodiments, the first suction member has a vacuum suction device.

In some embodiments, the semiconductor processing device further includes a trench disposed between the central region and the peripheral region, wherein the trench surrounds the central region.

An embodiment of the present disclosure provides another semiconductor processing device for processing a wafer frame unit, the semiconductor processing device includes a central region and a peripheral region. The wafer frame unit includes a wafer, an adhesive film and a frame, the wafer is located on a third surface of the adhesive film, the frame is located on a fourth surface of the adhesive film, the third surface faces away from the first Four surfaces. The central area is used to carry the wafer and the adhesive film, and the central area has a first surface. The peripheral area surrounds the central area and is used to carry the adhesive film and the frame, the peripheral area has a second surface lower than the first surface, wherein the frame is configured to be placed in the peripheral area between the first surface and the second surface space.

In some embodiments, the distance between the first surface and the second surface is substantially equal to the height of the frame.

In some embodiments, the central area includes a first adsorption member for adsorbing the wafer, and the first adsorption member is located below the first surface.

In some embodiments, the surrounding area includes a second adsorption member for adsorbing the frame, and the second adsorption member is located under the second surface.

In some embodiments, the second adsorbent has a vacuum or a magnetic device.

Therefore, this disclosure proposes a novel wafer attaching method and a grinding device. The frame and the wafer are pasted on the opposite side of the adhesive film for moving and grinding, which can reduce the damage of the wafer caused by the pulling of the adhesive film during the grinding process. At the same time, the adhesive film has enough tension to transfer the thinned wafer, thus improving the grinding quality of the wafer.

The technical features and advantages of the present disclosure have been broadly summarized above, so that the following detailed description of the present disclosure can be better understood. Other technical features and advantages constituting the subject matter of the claims of the present disclosure will be described below. Those skilled in the art of the present disclosure should understand that the concepts and specific embodiments disclosed below can be easily used to modify or design other structures or processes to achieve the same purpose as the present disclosure. Those with ordinary knowledge in the technical field to which the disclosure belongs should also understand that such equivalent constructions cannot depart from the spirit and scope of the disclosure defined by the appended claims.

Embodiments of the present disclosure are discussed in detail below. It should be appreciated, however, that the embodiments provide many applicable inventive concepts that can be embodied in a wide variety of specific contexts. The specific embodiments discussed are merely illustrative of specific ways to make and use the embodiments, and do not limit the scope of the disclosure.

Like reference numerals are configured to refer to like elements throughout the various views and illustrative embodiments. Reference will now be made in detail to the exemplary embodiments illustrated in the accompanying drawings. Wherever possible, the same reference numbers will be used in the drawings and specification to refer to the same or like parts. In the drawings, shapes and thicknesses may be exaggerated for clarity and convenience. The description will be particularly directed to elements forming part of, or cooperating more directly with, a device according to the present disclosure. It is to be understood that elements not specifically shown or described may take various forms. Reference throughout this specification to "some embodiments" or "an embodiment" means that a particular feature, structure or characteristic described in connection with the embodiment is included in at least one embodiment. Thus, appearances of the phrases "in some embodiments" or "in an embodiment" in various places throughout this specification are not necessarily referring to the same embodiment. Furthermore, the particular features, structures or characteristics may be combined in any suitable manner in one or more embodiments.

In the drawings, like reference numerals are configured to indicate like or similar elements throughout the various views, and illustrate and describe illustrative embodiments of the present invention. The figures are not necessarily drawn to scale, and in some instances the figures have been exaggerated and/or simplified and have been configured for illustrative purposes only. Based on the following illustrative examples of the invention, those of ordinary skill in the art will appreciate the many possible applications and variations of the invention.

Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which embodiments of the present disclosure belong. It should be understood that terms such as those defined in commonly used dictionaries should be interpreted to have a meaning consistent with their meanings in the relevant art and in the context of the present disclosure, and should not be interpreted or interpreted as being too formal meaning.

In addition, a number of embodiments of the present disclosure are provided below as examples to illustrate the core value of the present disclosure, but are not intended to limit the protection scope of the present disclosure. For clarity and easy understanding, the same or similar functions or elements in different embodiments of the present disclosure will not be repeatedly described or shown in the drawings. Moreover, different components or technical features in different embodiments can be combined or replaced to obtain new embodiments under the premise of not conflicting with each other, which still belongs to the protection scope of the present disclosure.

When the thickness of the wafer is less than 100 microns, the adhesive film pasted on the wafer cannot provide sufficient supporting capacity for the wafer. Referring to FIG. 1 , FIG. 1 is a perspective view of a wafer frame unit 100 according to the prior art. The wafer frame unit 100 includes a wafer 21 , an adhesive film 23 and a frame 25 . Wafer 21 has opposite first surface 21A and second surface 21B. The first surface 21A of the wafer 21 may be the front side of the wafer, and the second surface 21B may be the back side of the wafer. A plurality of semiconductor elements 22 are formed on the first surface 21A. The adhesive film 23 is pasted on the first surface 21A. The frame 25 is glued and fixed on the adhesive film 23 on the same side as the wafer 21 .

In the prior art wafer bonding method, the wafer 21 and the frame 25 are located on the same side of the adhesive film 23 . Since the frame 25 has a certain thickness, when grinding the second surface 21B of the wafer 21 , the height of the frame 25 must be lower than the final grinding thickness of the wafer 21 , which limits the use of the frame 25 . In addition, when the wafer 21 and the frame 25 are ground on the same side of the adhesive film 23, the adhesive film 23 will be pulled when the frame 25 is pressed down, causing the adhesive film 23 to fail to adhere to the wafer 21. Stress is generated on the wafer 21, which loses the purpose of protecting the wafer 21 by the frame 25, and easily causes edge cracks or fragments of the wafer 21.

FIG. 2 is a flowchart of a wafer grinding method 200 according to some embodiments of the present disclosure. Referring to FIG. 2 , the method 200 includes steps 101 , 103 , 105 , 107 , 109 and 111 . 3 to 10 and FIGS. 13 to 18 are schematic diagrams of operation steps in the wafer grinding method 200 drawn according to some embodiments of the present disclosure.

In step 101 , a wafer 1 is provided, as shown in FIG. 3 . In some embodiments, the wafer 1 includes semiconductor materials, such as silicon, gallium arsenide, silicon carbide, gallium nitride, sapphire (alumina) and other materials, including but not limited to germanium, selenium, gallium phosphide , indium antimonide, indium phosphide, indium arsenide, gallium antimonide, zinc oxide, strontium titanate, magnesium oxide, lanthanum aluminate, lithium niobate, lithium tantalate, borosilicate, graphene, coated silicon wafer, Quartz substrate or indium tin oxide substrate, etc. In some embodiments, the wafer 1 can also be replaced by non-semiconductor materials, including but not limited to glass substrates, optoelectronic substrates, ceramic substrates, or metal substrates.

In some embodiments, the wafer 1 has a first surface 1A and a second surface 1B opposite to each other. In some embodiments, the first surface 1A of the wafer 1 is the front side of the wafer and the second surface 1B is the back side of the wafer. In some embodiments, wafer 1 is circular. In other embodiments, the shape of the wafer 1 is not limited to a circle, and other different forms of wafers with thinning or transfer requirements, such as quadrilateral or polygonal, can be included within the scope of the present disclosure.

In some embodiments, a plurality of semiconductor elements 2 are formed on the first surface 1A, the semiconductor elements 2 include active elements or passive elements, and the active and passive electronic elements are electrically connected to each other to form different functional circuits. In some embodiments, the semiconductor element 2 may include various transistors, such as N-type metal-oxide-semiconductor (NMOS) and/or P-type metal-oxide-semiconductor (PMOS) ) device. In some embodiments, the semiconductor element 2 may include devices such as rectifiers, vacuum tubes, capacitors, resistors, diodes, or light-emitting diodes (light-emitting diodes, LEDs), which are applied to microelectromechanical systems (microelectromechanical systems) systems, MEMS), complementary metal-oxide-semiconductor (CMOS), three-dimensional integrated circuit (three-dimensional integrated circuit, 3DIC), memory chip, logic chip, power management chip , radio frequency (RF) wafer, semiconductor interposer (semiconductor interposer), Schottky diode (Schottky diode) or insulated gate bipolar transistor (insulated gate bipolar transistor, IGBT) and other fields.

Referring to FIG. 2 , in step 103 , the adhesive film 3 is pasted on the wafer 1 (see FIGS. 4 to 6 ). Referring to FIG. 4 , in some embodiments, a carrier device 400 is provided as a semiconductor processing device for sticking the adhesive film 3 on the wafer 1 . In some embodiments, the carrier device 400 includes a central region 14 and a peripheral region 15 . The central area 14 is a circular platform viewed from above, which is the main area for carrying the wafer 1 , and the peripheral area 15 is an annular platform surrounding the central area 14 . In some embodiments, the width (or diameter) of the central region 14 is substantially equal to the diameter of the wafer 1 . In some embodiments, the central region 14 is connected to the surrounding region 15 with a trench 16 therebetween. In some embodiments, trench 16 is annular and surrounds central region 14 .

Continuing to refer to FIG. 4, the central region 14 has a surface 14a, the peripheral region 15 has a surface 15a, and the trench 16 has a surface 16a. In some embodiments, the central area 14 includes a lifting platform 18 , which can adjust the height T1 of the surface 14 a to control the vertical position of the wafer 1 carried thereon. In addition, by adjusting the height T1, the surface 15a can be made higher than the surface 14a by a distance S1. In some embodiments, the distance S1 is adjustable to adapt to different wafer 1 thicknesses and different process requirements. In some embodiments, the central area 14 has an adsorption member 13, which is located below the surface 14a and above the lifting platform 18, such as a vacuum adsorption device, which can provide an adsorption force for the wafer 1 to fix the wafer 1. On the central area 14. In some embodiments, the surrounding area 15 has a vacuum adsorption device or a magnetic adsorption device (which can be a magnet or an electromagnet), which can provide adsorption to points, lines, or surfaces of the frame 5, so as to fix the frame 5 on the surrounding area 15 superior. In some embodiments, the surrounding area 15 has a base 9 , an ultraviolet light source 10 and a light-transmitting material 11 . The ultraviolet light source 10 is located above the base 9 for providing at least one wavelength for curing or debonding. The transparent material 11 is located above the ultraviolet light source 10 and below the surface 15a. In some embodiments, the light-transmitting material 11 includes, but is not limited to, glass or quartz materials. In some embodiments, according to different process requirements, an ultraviolet light source 10 and a light-transmitting material 11 may also be disposed in the groove 16, wherein the light-transmitting material 11 is located above the ultraviolet light source 10 and below the surface 16a.

Referring to FIG. 5, in some embodiments, the wafer 1 is placed on the central area 14 with the first surface 1A facing upwards, the second surface 1B of the wafer 1 faces the surface 14a of the central area 14, and Adsorbed by the adsorption member 13. In some embodiments, after the wafer 1 is placed in the central area 14, the surface 15a of the peripheral area 15 is made of a low-adhesive material, so that the height T1 of the lifting platform 18 is adjusted, so that the first surface 1A of the wafer 1 is in contact with the position. On the surface 15a, there is substantially the same level. In some embodiments, after the wafer 1 is placed in the central area 14, the surface 15a of the peripheral area 15 can be coated with a release agent 12. The release agent 12 is a material that can reduce its viscosity by, for example, lighting or heating. Adhesive. In some embodiments, after coating the release agent 12 , the height T1 is adjusted by the lifting platform 18 so that the first surface 1A of the wafer 1 and the release agent 12 on the surface 15 a have substantially the same level.

Referring to FIG. 6 , an adhesive film 3 is used to stick the wafer 1 on the carrier device 400 . In some embodiments, the adhesive film 3 is a special adhesive film suitable for grinding and thinning, and has no ductility. In some other embodiments, the adhesive film 3 may also have ductility and can be stretched easily. In some embodiments, the adhesive film 3 includes but is not limited to polymer materials, such as polyimide (polyimide, PI), polyolefin (polyolefin, PO), polypropylene (polypropylene, PP), polyethylene (polyethylene, PE) ), polyethylene terephthalate (PET), polyurethane (polyurethane, PU), ethylene vinyl acetate (EVA), polyvinyl chloride (polyvinyl chloride, PVC), Polystyrene (polystyrene, PS) or polyether (polyether sulfone, PES), etc. The adhesive film 3 has opposite surfaces 3A and 3B. In some embodiments, the adhesive film 3 is adhered on the wafer 1 with the surface 3A facing the first surface 1A, and at the same time, the surface 3A of the adhesive film 3 is also adhered to the surrounding area 15 through the release agent 12 . In some embodiments, when the adhesive film 3 needs to be removed from the surrounding area 15, the release agent 12 can be illuminated or heated to reduce the adhesiveness of the release agent 12, such that the adhesive force between the surface 3A and the surface 15a will be lowered, and the adhesive film 3 can be easily removed from the surrounding area 15. In some other embodiments, the adhesive film 3 can be removed from the surrounding area 15 only through the difference in strength of adhesion between the surface 3A and the surface 3B.

In some embodiments, the height T1 can be adjusted through the lifting platform 18 so that the first surface 1A of the wafer 1 and the surface 15 a have approximately the same horizontal plane. In some embodiments, when the adhesive film 3 needs to be removed from the surrounding area 15 , light or heat can be applied to the contact between the adhesive film 3 and the surrounding area 15 to move the adhesive film 3 away from the surrounding area 15 . In some embodiments, according to the thickness of the wafer 1, the height T1 can be precisely adjusted to change the height of the surface 14a, so that the height of the adhesive film 3 in the central area 14 and the height of the peripheral area 15 are substantially equal, so that the adhesive film 3 render level. In some embodiments, the groove 16 can provide a gap so that the adhesive film 3 is not completely adhered to the carrier device 400, so as to reduce the adhesive force between the adhesive film 3 and the release agent 12, and facilitate the adhesive film 3 together with the wafer. 1 from the carrying device 400.

Referring to FIG. 2, in step 105, the frame 5 is fixed on the adhesive film 3, as shown in FIGS. 7-10. Referring to FIG. 7 , in some embodiments, the adhesive 7 is coated on the bottom surface 3B of the adhesive film 3 on the surrounding area 15 . In some embodiments, the adhesive 7 can be a solvent-based, thermosetting or UV-type adhesive in solid, liquid or adhesive film form.

Referring to FIG. 8 , the frame 5 is placed on the surrounding area 15 in alignment with the adhesive 7 . In some embodiments, the frame 5 has a height R1 and is ring-shaped when viewed from above. In some embodiments, the frame 5 surrounds the wafer 1 and the central region 14 , and is disposed on opposite sides of the adhesive film 3 from the wafer 1 . In some other embodiments, the adhesive 7 may also be coated on the bottom surface of the frame 5 in advance, and then placed on the adhesive film 3 in such a way that the bottom surface of the frame 5 faces the surface 3B. In some embodiments, the adhesive film 3 is not only attached to the first surface 1A of the wafer 1, but also extends beyond the outer edge of the frame 5, so that the bottom surface of the frame 5 can be completely contained within the range of the adhesive film 3. . In some embodiments, the frame 5 and the wafer 1 are respectively placed on the peripheral area 15 and the central area 14 of the carrier device 400 in a manner of concentric circles.

Referring to FIG. 9 , the ultraviolet light source 10 is turned on to generate an ultraviolet light hv1 passing through the transparent material 11 . In some embodiments, the adhesive 7 is irradiated by the ultraviolet light hv1 to undergo a photochemical reaction and thus cured, so that the frame and the adhesive film 3 can be closely adhered. In some embodiments, the adhesive film 3 is fixed by the frame 5 to obtain enough tension to maintain an absolutely flat foundation to support and protect the wafer 1 .

Referring to FIG. 10 , in some embodiments, after the frame 5 and the adhesive film 3 are tightly fixed, the part of the adhesive film 3 at the outer edge of the frame 5 is removed. In some embodiments, a cutting tool (not shown) may be used to cut the adhesive film 3 along a cutting line in a cutting direction C1. In some embodiments, the cutting line is the outermost edge of the frame 5, and the adhesive film 3 is cut along the outermost edge of the frame 5 with a cutting tool, so that the cutting edge of the adhesive film 3 is aligned with the outermost edge of the frame 5. Cut to remove excess adhesive film 3 , and the remaining adhesive film 3 is adhered and fixed on the frame 3 . In some embodiments, the cut edge of the adhesive film 3 may be aligned with the outermost edge of the frame 5 or retracted inside the frame 5 .

FIG. 11 is a perspective view of a wafer frame unit 150 drawn according to some embodiments of the present disclosure. After step 105 is completed, the wafer 1 , adhesive film 3 and frame 5 form a wafer frame unit 150 . In some embodiments, the wafer frame unit 150 can be flipped over by a robotic arm or manually. The wafer frame unit 150 shown in FIG. 11 is placed with the first surface 1A facing upward. In some embodiments, the wafer frame unit 150 may be transported, transferred, or ground or otherwise processed.

FIG. 12 is a schematic side view of a wafer frame unit 150 according to some embodiments of the present disclosure. The wafer frame unit 150 shown in FIG. 12 is placed with the second surface 1B facing upward. The technique of adhering the frame 5 used in this disclosure, the frame 5 and the wafer 1 are respectively arranged on the opposite sides of the adhesive film 3. In this configuration, the wafer 1 can be used without considering the relative thickness of the frame 5 and the wafer 1. Protrude to carry out subsequent processes, such as grinding process. Compared with the prior art of FIG. 1, this method can effectively carry out the wafer backside thinning process without extruding the frame 5 in order to expose the second surface 1B of the wafer 1, thus saving other complicated or expensive processes. The advantages of low cost and reliability can be achieved.

Referring to FIG. 2 , in step 107 , the wafer 1 is ground, as shown in FIGS. 13-14 . Referring to FIG. 13 , in some embodiments, a grinding device 500 is provided as a semiconductor processing device, wherein the grinding device 500 includes a processing fixing part 32 and a grinding part 34 , which are separated from each other. In some embodiments, the processing and fixing part 32 includes a central area 31 and a surrounding area 33 , the surrounding area 33 surrounds the central area 31 , and the two have different planes. Specifically, the central area 31 has a top surface 31A, and the peripheral area 33 has a top surface 33A lower than the top surface 31A. There is a distance D1 between the top surface 31A and the top surface 33A to accommodate the frame 5 . In some embodiments, the distance D1 can be controlled by adjusting the relative plane heights of the central area 31 and the surrounding area 33 to correspond to different heights R1 of the frame 5 in different applications. In some embodiments, the distance D1 between the top surface 31A and the top surface 33A is substantially equal to the height R1 of the frame 5 . In some embodiments, the grinding part 34 has a grinding shaft 35 and a grinding tool 36 connected to the grinding shaft 35 . Abrasive abrasive 36 has a platform with a substantially flat surface. Abrasive abrasive 36 may be composed of any suitable substance, such as, but not limited to, abrasive abrasives such as diamond grinding wheels, polyurethane blocks, polyurethane slices, polyurethane impregnated polyester felt, and the like.

Continuing to refer to FIG. 13 , in some embodiments, the central area 31 has an adsorption member 41 located below the top surface 31A, such as a vacuum adsorption device, which can provide an adsorption force for the wafer 1 to fix the wafer 1 at the center. on District 31. In some embodiments, the surrounding area 33 has an adsorption member 43 located below the top surface 33A, such as a magnetic device (which can be a magnet or an electromagnet) or a vacuum adsorption device, which can provide a point, line, or surface for the frame 5. Adsorption force, to fix the frame 5 on the surrounding area 33. The wafer frame unit 150 can be fixed on the processing fixing part 32 by means of reverse support through the adsorption part 41 of the central area 31 and the adsorption part 43 of the peripheral area 33 . In some embodiments, in the grinding apparatus 500 , the second surface 1B of the wafer 1 is made to face the grinding tool 36 of the grinding part 34 . In some embodiments, the grinding part 34 can be moved according to the requirements of the process, and the distance between the grinding part 34 and the processing fixing part 32 can be adjusted.

Referring to FIG. 14 , in some embodiments, after the wafer frame unit 150 is fixed on the processing and fixing portion 32, the frame 5 will surround the central area 31 of the processing and fixing portion 32, and the second surface 1B of the wafer 1 will Facing the grinding tool 36 , at this time, the center of the wafer 1 is only a predetermined distance away from the rotation center of the grinding tool 36 . Then, the grinding part 34 approaches the wafer 1 at an adjustable attack speed until the grinding tool 36 abuts against the second surface 1B of the wafer 1 , thereby starting to grind. As the grinding shaft 35 rotates, the grinding wheel 36 also rotates around the Z-axis. In some embodiments, the grinding tool 36 applies a stress to the second surface 1B of the wafer 1 . Along with the rapid rotation of the grinding wheel 36, precise grinding will take place at the abutment of the grinding wheel 36 and the second surface 1B and produce the residue after the grinding of the second surface 1B, and the wafer 1 will gradually become thinner during the grinding process. As a result, the wafer thickness W1 gradually decreases. In some embodiments, the grinding shaft 35 can drive the grinding tool 36 to rotate at an adjustable speed, and the adjustable speed can be adjusted according to the predetermined thickness of the second surface 1B to be ground. In some other embodiments, during the rotation of the grinding tool 36 , the wafer 1 will also rotate, so that more precise grinding can be performed.

In some embodiments, after the wafer 1 is ground by the grinding device 500 , the thinned wafer 1 is still fixed on the wafer frame unit 150 . During the grinding process of the wafer 1 by the grinding unit 34 , the frame 5 can fix the adhesive film 3 and maintain the flatness of the adhesive film 3 , provide sufficient tension for the adhesive film 3 , and prevent the shape of the adhesive film 3 from being damaged. In addition, the wafer 1 is covered by the adhesive film 3 and supported by the frame 5 to provide protection and bearing capacity during grinding. On the other hand, the wafer frame unit 150 is arranged on the grinding device 500 in such a way that the frame 5 and the wafer 1 are respectively arranged on opposite sides of the adhesive film 3, so that the grinding part 34 can be positioned on the second surface 1B of the wafer 1. During the grinding process, the probability of the wafer being damaged due to the pulling of the adhesive film during the grinding process is reduced, so that a better thinning quality of the wafer 1 can be obtained.

Referring to FIG. 2, in step 109, the wafer is transferred, as shown in FIGS. 15-17. 15, in some embodiments, a transfer device 600 is provided, the transfer device 600 includes a first adsorption part 61, a second adsorption part 62 and a connecting part 65, the first adsorption part 61 and the second adsorption part 62 are connected through Part 65 is connected. In some embodiments, the first adsorption portion 61 is used to adsorb the wafer 1 , so the width or diameter of the first adsorption portion 61 is substantially equal to the diameter of the wafer 1 . In some embodiments, the second adsorption part 62 surrounds the first adsorption part 61 and has a ring structure.

In some embodiments, both the first adsorption part 61 and the second adsorption part 62 have different plane heights. Specifically, the first adsorption portion 61 has a top surface 61A, the second adsorption portion 62 has a top surface 62A, and there is a height difference H1 between the top surface 61A and the top surface 62A. In some embodiments, the first adsorption part 61 can adjust the height difference H1 through the connection part 65 . In some embodiments, the height difference H1 is substantially equal to the thickness W1.

Referring to FIG. 16 , in some embodiments, the first adsorption part 61 has an adsorption member, such as a vacuum device, which can provide suction force on the wafer 1 to fix the wafer 1 on the first adsorption part 61 . In some embodiments, the second adsorption part 62 has a vacuum adsorption device or a magnetic adsorption device (which can be a magnet or an electromagnet), which can provide adsorption to points, lines, or surfaces of the frame 5, so as to fix the frame 5 on the first on the second adsorption part 62 . Through the suction devices of the first suction part 61 and the second suction part 62 , the wafer frame unit 150 can be fixed on the transfer device 600 with the second surface 1B facing upward. In some embodiments, the wafer frame unit 150 can be transferred through the transfer device 600, for example, the transfer device 600 can transport the wafer frame unit 150, and transfer the wafer frame unit 150 into the grinding device 500 or transfer Grinding device 500, but not limited thereto. In some other embodiments, other methods can also be used, such as placing the wafer frame unit 150 on the grinding device 500 by manpower or a robot arm. 150 is transferred out of the grinding device 500 . In some embodiments, when the transfer device 600 transfers the wafer frame unit 150 , the connection part 65 lifts the first suction part 61 to adjust the height difference H1 at any time to correspond to different wafer thicknesses W1 before and after grinding.

Referring to FIG. 17 , FIG. 17 is a schematic diagram of transferring the wafer frame unit 150 out of the processing and fixing part 32 through the transfer device 600 after the wafer 1 has been ground and thinned. At this time, the distance D1 between the central area 31 and the surrounding area 33 is substantially equal to the height R1 of the frame 5, and at the same time, the height difference H1 between the first adsorption portion 61 and the second adsorption portion 62 is also equal to the thickness of the thinned wafer. W1 is almost equal. The transfer device 600 transfers the wafer 1 out of the processing and fixing part 32 in a reverse manner in which the second surface 1B of the wafer 1 faces upward, and transports the wafer 1 to a subsequent process.

In some embodiments, after the wafer 1 is ground and thinned, the wafer 1 is subjected to backside wet etching, so as to remove the wafer damage layer caused by grinding and release the grinding stress.

Referring to FIG. 2 , in step 111 , the adhesive film 3 is degummed, as shown in FIG. 18 . In some embodiments, after the wafer 1 is ground and thinned, a debonding process may be performed on the wafer frame unit 150 . FIG. 18 shows the wafer frame unit 150 placed with the second surface 1B facing upwards. The wafer frame unit 150 is irradiated by, for example, ultraviolet light hv2, so that the adhesive 7 between the adhesive film 3 and the frame 5 is compatible with the wafer frame unit 150. The ultraviolet light hv2 undergoes a photochemical reaction to remove the adhesiveness of the adhesive 7 . In this way, the frame 5 can be separated from the ground wafer 1 to complete the wafer back grinding process.

In some embodiments, the carrying device 400, the grinding device 500 and the transfer device 600 can be used in combination with the wafer frame unit 150 to provide the purpose of carrying, grinding and transferring the wafer 1, and the three purposes can be closely combined , for example, according to the complete process of step S101 to step S111 to complete the thinning process of the wafer 1 . In some other embodiments, the carrying device 400, the grinding device 500 or the transfer device 600 can also operate independently, and only one or both of the carrying device 400, the grinding device 500 or the transfer device 600 is used according to actual needs. . In some embodiments, the carrying device 400 may be used to carry the wafer 1 to form the wafer frame unit 150 only according to steps S101 to S105 , wherein the wafer frame unit 150 may be used for other processes. In some embodiments, the grinding apparatus 500 may be used to provide grinding of the wafer 1 according to step S107 only, wherein the wafer frame unit 150 may be provided by steps S101 to S105 or by other steps. In some embodiments, the transfer device 600 may be used to transfer the wafer 1 before or after thinning only according to step S109 .

Although the present disclosure and its advantages have been described in detail, it should be understood that various changes, substitutions and substitutions can be made without departing from the spirit and scope of the present disclosure as defined by the claims. Furthermore, the scope of the present application is not limited to the specific embodiments of the process, machine, manufacture, composition of matter, means, methods and steps described in the specification. Those skilled in the art can understand from the disclosure content of this disclosure that existing or future-developed processes, machinery, manufacturing, and materials that have the same function or achieve substantially the same results as the corresponding embodiments described herein can be used according to the present disclosure composition, means, method, or steps. Accordingly, such processes, machinery, manufacturing, material composition, means, methods, or steps are included in the scope of the patent application of this application.

1, 21: Wafer 1A, 21A: first surface 1B, 21B: second surface 2, 22: Semiconductor components 3, 23: film 3A: Film front 3B: The back of the film 5, 25: ring frame 7, 27: Adhesive 9: base 10: UV light source 11: Translucent material 12: Release material 13: Adsorption parts 14, 31: Central area 14a, 15a, 16a: surface 15, 33: Surrounding area 16: Groove 18: Lifting platform 31A, 33A, 61A, 62A: top surface 32: Processing fixed part 34: Grinding department 35: grinding shaft 36: Grinding Abrasives 61: The first adsorption part 62: Second adsorption part 65: connection part 101, 103, 105, 107, 109, 111: steps 200: method 100, 150: wafer frame unit 400: carrying device 500: grinding device 600: transfer device C1: cutting direction hv1, hv2: UV light H1: height difference S1, D1: distance T1, R1: Height W1: Thickness

The disclosure content of the present application can be understood more comprehensively when referring to the embodiments and the patent scope of the application for combined consideration of the drawings, and the same reference numerals in the drawings refer to the same components.

FIG. 1 is a schematic perspective view of a wafer frame unit drawn according to a comparative example of the prior art.

FIG. 2 is a flowchart of a wafer processing method according to some embodiments of the present disclosure.

3 to 10 are schematic diagrams of operation steps in the wafer processing method according to FIG. 2 according to some embodiments of the present disclosure.

FIG. 11 is a schematic perspective view of a wafer frame unit drawn according to some embodiments of the present disclosure

FIG. 12 is a schematic side view of a wafer frame unit according to some embodiments of the present disclosure.

13 to 18 are schematic diagrams of operation steps in the wafer processing method according to FIG. 2 according to some embodiments of the present disclosure.

101: Steps

103: Step

105: Step

107: Step

109: Step

111: Step

200: method

Claims (10)

A semiconductor processing device, comprising: a central area for carrying a wafer, the central area having a first surface; and A peripheral area, which surrounds the central area and is used to carry an adhesive film and a frame, the peripheral area has a second surface higher than the first surface, the wafer is located on a third surface of the adhesive film, the frame Located on a fourth surface of the adhesive film, the third surface faces away from the fourth surface. The semiconductor processing device as claimed in claim 1, wherein the central region is substantially circular in plan view. The semiconductor processing device as claimed in claim 1, wherein the central region includes a first adsorption member for adsorbing the wafer, and the first adsorption member is located below the first surface. The semiconductor processing device as claimed in claim 3, wherein the first suction member has a vacuum suction device. The semiconductor processing device as claimed in claim 1, further comprising a trench disposed between the central region and the peripheral region, wherein the trench surrounds the central region. A semiconductor processing device for processing a wafer frame unit, the semiconductor processing device comprising: A central area, wherein the wafer frame unit includes a wafer, an adhesive film and a frame, the wafer is located on a third surface of the adhesive film, the frame is located on a fourth surface of the adhesive film, the third a surface facing away from the fourth surface, wherein the central area is used to carry the wafer and the adhesive film, the central area has a first surface; and A peripheral area, which surrounds the central area and is used to carry the adhesive film and the frame, the peripheral area has a second surface lower than the first surface, wherein the frame is configured to be placed in the peripheral area at the first the space between the surface and the second surface. The semiconductor processing device as claimed in claim 6, wherein a distance between the first surface and the second surface is substantially equal to a height of the frame. The semiconductor processing device as claimed in claim 6, wherein the central region includes a first adsorption member for adsorbing the wafer, and the first adsorption member is located below the first surface. The semiconductor processing device as claimed in claim 6, wherein the surrounding area includes a second adsorption member for adsorbing the frame, and the second adsorption member is located under the second surface. The semiconductor processing device as claimed in claim 9, wherein the second adsorption member has a vacuum or a magnetic device.

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