TW202328217A - 樹脂組成物、硬化物、積層體、硬化物的製造方法、積層體的製造方法、半導體裝置的製造方法及半導體裝置 - Google Patents

樹脂組成物、硬化物、積層體、硬化物的製造方法、積層體的製造方法、半導體裝置的製造方法及半導體裝置 Download PDF

Info

Publication number
TW202328217A
TW202328217A TW111146972A TW111146972A TW202328217A TW 202328217 A TW202328217 A TW 202328217A TW 111146972 A TW111146972 A TW 111146972A TW 111146972 A TW111146972 A TW 111146972A TW 202328217 A TW202328217 A TW 202328217A
Authority
TW
Taiwan
Prior art keywords
group
resin composition
preferable
resin
formula
Prior art date
Application number
TW111146972A
Other languages
English (en)
Chinese (zh)
Inventor
浅川大輔
Original Assignee
日商富士軟片股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商富士軟片股份有限公司 filed Critical 日商富士軟片股份有限公司
Publication of TW202328217A publication Critical patent/TW202328217A/zh

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00—Layered products comprising a layer of metal
    • B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B32B15/08—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/16—Nitrogen-containing compounds
    • C08K5/20—Carboxylic acid amides
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L79/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen or carbon only, not provided for in groups C08L61/00 - C08L77/00
    • C08L79/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
    • C08L79/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
TW111146972A 2021-12-23 2022-12-07 樹脂組成物、硬化物、積層體、硬化物的製造方法、積層體的製造方法、半導體裝置的製造方法及半導體裝置 TW202328217A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021-209325 2021-12-23
JP2021209325 2021-12-23

Publications (1)

Publication Number Publication Date
TW202328217A true TW202328217A (zh) 2023-07-16

Family

ID=86902284

Family Applications (1)

Application Number Title Priority Date Filing Date
TW111146972A TW202328217A (zh) 2021-12-23 2022-12-07 樹脂組成物、硬化物、積層體、硬化物的製造方法、積層體的製造方法、半導體裝置的製造方法及半導體裝置

Country Status (3)

Country Link
JP (1) JPWO2023120059A1 (https=)
TW (1) TW202328217A (https=)
WO (1) WO2023120059A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW202428704A (zh) * 2022-10-27 2024-07-16 日商富士軟片股份有限公司 樹脂組成物、硬化物、積層體、硬化物的製造方法、積層體的製造方法、半導體元件的製造方法及半導體元件

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102571972B1 (ko) * 2018-09-28 2023-08-29 후지필름 가부시키가이샤 감광성 수지 조성물, 경화막, 적층체, 경화막의 제조 방법, 및 반도체 디바이스
JP2020154205A (ja) * 2019-03-22 2020-09-24 富士フイルム株式会社 パターン形成方法、硬化性樹脂組成物、膜、硬化膜、積層体、及び、半導体デバイス

Also Published As

Publication number Publication date
JPWO2023120059A1 (https=) 2023-06-29
WO2023120059A1 (ja) 2023-06-29

Similar Documents

Publication Publication Date Title
KR102927378B1 (ko) 수지 조성물, 경화물, 적층체, 경화물의 제조 방법, 적층체의 제조 방법, 반도체 디바이스의 제조 방법, 및, 반도체 디바이스
TW202311240A (zh) 樹脂組成物、硬化物、積層體、硬化物之製造方法、積層體之製造方法、半導體元件之製造方法、及半導體元件、以及化合物
TW202319451A (zh) 樹脂組成物、硬化物、積層體、硬化物的製造方法、積層體的製造方法、半導體裝置的製造方法及半導體裝置、以及化合物
TW202242002A (zh) 樹脂組成物、硬化物、積層體、硬化物的製造方法、半導體裝置及樹脂
TW202424058A (zh) 樹脂組成物、硬化物、積層體、硬化物的製造方法、積層體的製造方法、半導體元件的製造方法及半導體元件
TW202307085A (zh) 樹脂組成物、硬化物、積層體、硬化物的製造方法及半導體裝置、以及聚醯亞胺前驅物
TW202402906A (zh) 硬化物的製造方法、半導體元件的製造方法、處理液及樹脂組成物
TW202337926A (zh) 樹脂組成物、硬化物、積層體、硬化物之製造方法、積層體之製造方法、半導體元件之製造方法及半導體元件
TW202344568A (zh) 樹脂組成物、硬化物、積層體、硬化物的製造方法、積層體的製造方法、半導體元件的製造方法及半導體元件
TW202313572A (zh) 樹脂組成物、硬化物、積層體、硬化物的製造方法、積層體的製造方法、半導體裝置的製造方法及半導體裝置、以及鹼產生劑
TW202319410A (zh) 樹脂組成物、硬化物、積層體、硬化物的製造方法、積層體的製造方法、半導體裝置的製造方法及半導體裝置
TW202305040A (zh) 硬化物的製造方法、積層體的製造方法、半導體裝置的製造方法、樹脂組成物、硬化物、積層體及半導體裝置
TW202328217A (zh) 樹脂組成物、硬化物、積層體、硬化物的製造方法、積層體的製造方法、半導體裝置的製造方法及半導體裝置
TW202328348A (zh) 樹脂組成物、硬化物、積層體、硬化物的製造方法、積層體的製造方法、半導體裝置的製造方法及半導體裝置
KR102933491B1 (ko) 감광성 수지 조성물, 경화물, 적층체, 경화물의 제조 방법, 적층체의 제조 방법, 반도체 디바이스의 제조 방법, 및, 반도체 디바이스
TW202344613A (zh) 樹脂組成物、硬化物、積層體、硬化物之製造方法、積層體之製造方法、半導體元件之製造方法及半導體元件、以及化合物
TW202436450A (zh) 樹脂組成物、硬化物、積層體、硬化物的製造方法、積層體的製造方法、半導體元件的製造方法及半導體元件
TW202323511A (zh) 硬化物的製造方法、積層體的製造方法、及半導體元件的製造方法以及處理液
TW202309117A (zh) 樹脂組成物、硬化物、積層體、硬化物的製造方法、積層體的製造方法、半導體裝置的製造方法及半導體裝置
CN118679426A (zh) 树脂组合物、固化物、层叠体、固化物的制造方法、层叠体的制造方法、半导体器件的制造方法及半导体器件
TW202244160A (zh) 樹脂組成物、硬化物、積層體、硬化物的製造方法及半導體裝置、以及鹼產生劑
TW202248205A (zh) 樹脂組成物、硬化物、積層體、硬化物的製造方法及半導體裝置、以及化合物
TW202244129A (zh) 樹脂組成物、硬化物、積層體、硬化物的製造方法及半導體裝置、以及環化樹脂的前驅物
KR102933492B1 (ko) 수지 조성물, 경화물, 적층체, 경화물의 제조 방법, 적층체의 제조 방법, 반도체 디바이스의 제조 방법, 및, 반도체 디바이스
KR102937632B1 (ko) 수지 조성물, 경화물, 적층체, 경화물의 제조 방법, 적층체의 제조 방법, 반도체 디바이스의 제조 방법, 및, 반도체 디바이스