TW202323804A - Inspection system, and spot lighting device for inspection - Google Patents
Inspection system, and spot lighting device for inspection Download PDFInfo
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- TW202323804A TW202323804A TW111146968A TW111146968A TW202323804A TW 202323804 A TW202323804 A TW 202323804A TW 111146968 A TW111146968 A TW 111146968A TW 111146968 A TW111146968 A TW 111146968A TW 202323804 A TW202323804 A TW 202323804A
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21S—NON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
- F21S2/00—Systems of lighting devices, not provided for in main groups F21S4/00 - F21S10/00 or F21S19/00, e.g. of modular construction
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V9/00—Elements for modifying spectral properties, polarisation or intensity of the light emitted, e.g. filters
- F21V9/30—Elements containing photoluminescent material distinct from or spaced from the light source
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2115/00—Light-generating elements of semiconductor light sources
- F21Y2115/30—Semiconductor lasers
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Abstract
Description
本發明,係有關於檢測系統、及用於該檢測系統的檢測用聚光照明裝置,用以對例如工件照射光,並拍攝例如工件之外觀或刮痕、缺陷等。The present invention relates to an inspection system and a spotlight lighting device for inspection used in the inspection system, which is used to irradiate light on, for example, a workpiece, and photograph, for example, the appearance, scratches, defects, etc. of the workpiece.
於習知技術,已知有一種檢測系統,係所謂同軸落射結構,即構成為具備:照明裝置,出射對工件照射之檢測光;以及攝影裝置,具有藉由被工件散射或反射的光以拍攝工件的物側遠心光學系統;而可以將照明裝置所出射之檢測光,從與攝影裝置的光軸之同軸上,照射於工件(例如專利文獻1)。於習知技術,在此檢測系統,作為照明裝置之光源體,係使用在平面上排列許多LED晶粒的面光源。 [習知技術文獻] [專利文獻] In the prior art, there is known a detection system, which is a so-called coaxial projection structure, which is constituted to have: an illumination device that emits detection light that irradiates the workpiece; The object-side telecentric optical system of the workpiece; and the detection light emitted by the illuminating device can be irradiated on the workpiece from the same axis as the optical axis of the photographing device (for example, Patent Document 1). In the conventional technology, the inspection system here uses a surface light source that arranges many LED crystal grains on a plane as the light source body of the lighting device. [Prior art literature] [Patent Document]
[專利文獻1]日本特開2021-085815號公報[Patent Document 1] Japanese Patent Laid-Open No. 2021-085815
[發明所欲解決的問題][Problem to be solved by the invention]
本案發明人團隊,首度發現在是為同軸落射結構而具有上述那樣的物側遠心光學系統的檢測系統,有著以下問題:光學系統的光學倍率設得越高,F值就有變得越大的傾向;例如在以2倍以上的高倍率拍攝的情況下,相較於在低倍率拍攝的情形,拍攝時的亮度(曝光量)會降低。The team of inventors in this case discovered for the first time that the detection system with the above-mentioned object-side telecentric optical system for the coaxial epi-projection structure has the following problem: the higher the optical magnification of the optical system is set, the larger the F value will be. tendencies; for example, in the case of shooting at a high magnification of 2x or more, the brightness (exposure level) at the time of shooting will decrease compared to the case of shooting at a low magnification.
為解決此種問題而反覆精心鑽研的結果,本案發明人團隊思索,藉由在出射檢測光的照明裝置使配光特性(例如5°以下)縮窄的同時,提高該照明裝置之光出射面的輻射輝度,則即使是在高倍率的物側遠心光學系統,或許仍可望提升拍攝時的亮度。然而,在使用配光特性係朗伯分佈且為面光源的LED作為光源體的習知照明裝置,要實現如此狹窄之配光特性且高輝度的照明裝置,實屬困難。As a result of careful research to solve this problem, the inventor team of this case considered that by narrowing the light distribution characteristics (for example, below 5°) of the lighting device that emits the detection light, the light emitting surface of the lighting device is increased. If the radiant luminance is high, even in a high-magnification object-side telecentric optical system, it may still be expected to increase the brightness when shooting. However, it is very difficult to realize such a narrow light distribution characteristic and high luminance lighting device in the conventional lighting device using LED as a light source with Lambertian distribution characteristics and a surface light source.
有鑑於此,本發明為解決上述課題而研發,其主要課題係:在是為同軸落射結構而具有高倍率之物側遠心光學系統的檢測系統,提升拍攝時的亮度。 [解決問題之技術手段] In view of this, the present invention was developed to solve the above-mentioned problems, and its main problem is: in a detection system with a high-magnification object-side telecentric optical system with a coaxial epi-projection structure, the brightness during shooting is improved. [Technical means to solve the problem]
亦即,本發明之檢測系統,具備:檢測用聚光照明裝置,具有光源體、以及將該光源體所發出的光作為檢測光而出射的光出射面;以及攝影裝置,具有拍攝工件的物側遠心光學系統;該檢測系統,構成為使該光出射面所出射的該檢測光,從與該攝影裝置的光軸之同軸上,照射於該工件;該檢測系統之特徵在於,該光源體係利用半導體雷射而構成。That is, the detection system of the present invention is provided with: a spotlight illuminating device for detection, having a light source body, and a light emitting surface that emits the light emitted by the light source body as detection light; Side-telecentric optical system; the detection system is configured to irradiate the workpiece with the detection light emitted from the light exit surface on the same axis as the optical axis of the photographing device; the detection system is characterized in that the light source system Constructed using semiconductor lasers.
若依如此構成的本發明之檢測系統,藉由利用係點光源之半導體雷射以構成檢測用聚光照明裝置的光源體,而相較於採取利用LED之光源體的習知者,可縮窄配光特性、並且提高光出射面的輻射輝度;所以在與高倍率之物側遠心光學系統組合的情況下,可以提高在攝影裝置之像面的輻射照度,提升拍攝時的亮度。According to the detection system of the present invention constituted in this way, by using the semiconductor laser which is a point light source to form the light source body of the concentrating lighting device for detection, compared with the conventional light source body using LEDs, it can reduce Narrow light distribution characteristics, and increase the radiance of the light exit surface; therefore, when combined with a high-magnification object-side telecentric optical system, it can increase the radiance of the image plane of the photographic device and increase the brightness when shooting.
然而,在利用半導體雷射以構成光源體的情況下,若使半導體雷射所發出的雷射光直接照射於工件面上,則有起因於雷射光之配光的不對稱性而導致工件面上之輻射照度的均勻性降低之虞。However, in the case of using a semiconductor laser to form the light source body, if the laser light emitted by the semiconductor laser is directly irradiated on the surface of the workpiece, there will be a problem caused by the asymmetry of the light distribution of the laser light, which will cause the surface of the workpiece to be damaged. The uniformity of the irradiance may be reduced.
因此,該檢測系統,較佳係:該光源體,係使該半導體雷射所發出的雷射光直接出射者;該檢測用聚光照明裝置,具有使該光源體所出射的雷射光擴散的光擴散部。 如此一來,由於藉由以光擴散部使光源體所出射的雷射光擴散,可以提升配光的對稱性,所以在提升拍攝時的亮度的同時,仍可提升在工件面上之輻射照度的均勻性。 Therefore, the detection system is preferably: the light source body is used to directly emit the laser light emitted by the semiconductor laser; Diffusion Department. In this way, the symmetry of the light distribution can be improved by diffusing the laser light emitted from the light source body by the light diffusion part, so while improving the brightness during shooting, the irradiance on the workpiece surface can still be increased. Uniformity.
作為該光擴散部之具體態樣,可舉出:設在該光源體與該光出射面之間的光斑消除器、或是藉由對該光出射面施作例如表面紋理處理所形成的光擴散面等。As a specific aspect of the light diffusion part, it can be mentioned: a spot eliminater arranged between the light source body and the light exit surface, or a light beam formed by applying surface texture treatment to the light exit surface, for example. Diffusion surface etc.
又,於該檢測系統,作為用以提升工件面上之輻射照度的均勻性之另一態樣,較佳係該光源體具備該半導體雷射及螢光體,並構成為將該半導體雷射所出射的雷射光照射於該螢光體而使其激發所產生的二次光予以出射。 若係此款,則由於光源體構成為所謂雷射螢光型,亦即將半導體雷射所出射的雷射光(激發光)照射於螢光體而使其激發,以使螢光體發光,所以配光之對稱性較雷射光高,又可以出射如雷射光般高輝度的光,藉此在提升拍攝時的亮度的同時,仍可提升在工件面上之輻射照度的均勻性。 Also, in the detection system, as another aspect for improving the uniformity of irradiance on the workpiece surface, it is preferable that the light source body has the semiconductor laser and the phosphor, and is configured such that the semiconductor laser The emitted laser light is irradiated on the phosphor to emit secondary light generated by excitation. In this case, since the light source body is configured as a so-called laser fluorescent type, that is, the laser light (excitation light) emitted by a semiconductor laser is irradiated on the phosphor to excite it, so that the phosphor emits light. The symmetry of light distribution is higher than that of laser light, and it can emit light with high luminance like laser light, so that the uniformity of radiant illumination on the workpiece surface can be improved while improving the brightness during shooting.
作為該檢測系統所具備之聚光照明裝置的光學特性,該光源體之光展量較佳係1mm 2・sr以下;又,從該光出射面出射的該檢測光之指向角,較佳係±5°以內。 若具備此種配光特性,則在與高倍率之物側遠心光學系統組合之際,能以高利用效率使該檢測光到達工件,可以充分提高在攝影裝置之像面的輻射照度,提升拍攝時的亮度。 在此,所謂的「光源體之光展量」,在光源體構成為將半導體雷射所發出的雷射光直接出射的情況下,係意指該半導體雷射之光展量;在光源體構成為從照射有雷射光之螢光體,將所產生的二次光予出射的情況下,係意指該螢光體之光展量。 As the optical characteristics of the concentrating lighting device included in the detection system, the etendue of the light source body is preferably less than 1 mm 2 sr; and the direction angle of the detection light emitted from the light exit surface is preferably Within ±5°. With such a light distribution characteristic, when combined with a high-magnification object-side telecentric optical system, the detection light can reach the workpiece with high utilization efficiency, which can fully increase the irradiance on the image plane of the photographing device and improve the imaging efficiency. brightness at the time. Here, the so-called "the etendue of the light source body" refers to the etendue of the semiconductor laser when the light source body is configured to directly emit the laser light emitted by the semiconductor laser; In the case of emitting secondary light generated from a phosphor irradiated with laser light, it means the etendue of the phosphor.
又,該檢測系統,若係在該光源體與該光出射面之間具備將該光源體所出射的光導向該光出射面之光學系統的情況下,較佳係使得該光學系統之各個位置的光展量,在1mm 2・sr以下;更佳係使得光出射面的鄰近處之光展量,在1mm 2・sr以下。 In addition, if the detection system is equipped with an optical system between the light source body and the light exit surface to guide the light emitted by the light source body to the light exit surface, it is preferable to make each position of the optical system The etendue is below 1mm 2 ·sr; more preferably, the etendue near the light exit surface is below 1mm 2 ·sr.
又,作為顯著發揮本發明之效果的態樣,可舉出使該物側遠心光學系統的光學倍率為2倍以上者。Moreover, as an aspect which exhibits the effect of this invention remarkably, the thing which makes the optical magnification of this object side telecentric
又,本發明之檢測用聚光照明裝置,係與具有拍攝工件之物側遠心光學系統的攝影裝置一同使用,該檢測用聚光照明裝置具備:光源體、以及將該光源體所發出的光作為檢測光而出射的光出射面;其特徵在於,該光源體係利用半導體雷射而構成者。 若係此種檢測用聚光照明裝置,則可發揮與上述之本發明之檢測系統同樣的作用效果。 [發明之效果] In addition, the spotlight illuminating device for detection of the present invention is used together with an imaging device having an object-side telecentric optical system for photographing a workpiece. The light emitting surface used as the detection light is emitted; it is characterized in that the light source system is formed by using a semiconductor laser. If it is such a spotlight illumination device for detection, it can exert the same function and effect as the above-mentioned detection system of the present invention. [Effect of Invention]
若依如此構成的本發明,則在是為同軸落射結構而具有高倍率之物側遠心光學系統的檢測系統,可提升拍攝時的亮度。According to the present invention thus constituted, the detection system of the object-side telecentric optical system having a high magnification with a coaxial epi-projection structure can improve the brightness during shooting.
<第1實施形態>
以下針對使用了本發明第1實施形態之檢測用聚光照明裝置1的檢測系統100,參照各圖以進行說明。
<First Embodiment>
Hereinafter, the
此檢測系統100,具備:檢測用聚光照明裝置1,出射對工件W照射的檢測光;以及攝影裝置2,具有藉由被工件W散射或反射的光以拍攝工件W的物側遠心光學系統。如圖1所示,此檢測系統100,是為所謂同軸落射結構,其構成為藉由使用半反射鏡232,而使檢測用聚光照明裝置1所出射的檢測光,從與攝影裝置2的光軸C2之同軸上,照射於工件W。This
檢測用聚光照明裝置1,如圖2所示,係從形成在末端的光出射面1s出射檢測光者;具備:照明殼體11、內置於該照明殼體11的光源體12、以及設在光源體12的光出射方向前方的光學系統13。又,所謂檢測用聚光照明裝置1,意指不需使用光纖,就能將該光出射面1s,設置在與物側遠心光學系統的開口光圈22a的位置共軛之位置附近的照明裝置1。The
照明殼體11,係構成旋轉體形狀者,具備:筒身部111,係圓筒形狀,容納光源體12或配線基板等;以及末端部112,係圓筒形狀,與筒身部111同軸設置。該末端部112,係比起筒身部111更為小徑者,並在其末端面形成有上述之光出射面1s。此末端部112,構成為插入後述之攝影裝置2的相機透鏡22所具備的照明安裝口231a,而可以將光出射至相機透鏡22內。The
光源體12,係發光面積比LED小(例如0.1mm
2以下)、並且高輝度者,係利用出射雷射光的半導體雷射12a(LD)所構成者。作為半導體雷射12a,使用已知構成者。本實施形態的光源體12,構成為將半導體雷射12a所發出的雷射光(一次光)直接朝光學系統13出射;為使其出射光軸與光學系統13的光軸C1一致,而設在該光軸C1上。
The
光學系統13,係設在光源體12與光出射面1s之間,而將光源體12所出射之雷射光,導向光出射面1s者。具體而言,此光學系統13,沿著其光軸方向,由基端部往末端部112,依序具備:準直透鏡131、光擴散元件132、柱狀透鏡133。準直透鏡131及光擴散元件132及柱狀透鏡133,設置成彼此的光軸方向一致。The
準直透鏡131,係將置於其焦點位置13f的光源體12所出射的雷射光聚光,而使其趨近平行光(準直光)者。The
光擴散元件132,係藉由使得已通過準直透鏡131的雷射光擴散以降低其同調性,而用以降低光斑雜訊者;具體而言,係光斑消除器。光擴散元件132的具體構成並無特別限定,惟可舉例如:以振動馬達等使磨砂型擴散板振動者等。The light diffusing
柱狀透鏡133呈柱狀,設置在照明殼體11的末端內部而使其軸向與光學系統13的光軸C1一致。柱狀透鏡133,將已通過光擴散元件132的光,從順著軸向的基端面導向內部,並減少在內部行進之光的光量不均,而從形成於末端面的光出射面1s朝外部出射。係光出射面1s的柱狀透鏡133之末端面,經表面紋理處理,以使該光出射面1s作為光擴散面而發揮使出射光擴散的功能。The
針對如此構成之本實施形態的檢測用聚光照明裝置1的光學特性,進行說明。此檢測用聚光照明裝置1,藉由利用半導體雷射12a以構成光源體12,而可以提高光出射面1s的輻射輝度、並縮窄其配光特性。本實施形態的檢測用聚光照明裝置1,從光出射面1s所出射之檢測光的指向角(或半值角),係±5°以內。此指向角,意指以在配光特性上輻射強度最強的方向為0°,而相對輻射強度在峰值之50%以上的角度。又,該光源體12(在本實施形態係半導體雷射12a)的光展量(Etendue)係1.0mm
2・sr以下,更具體而言係0.01mm
2・sr以下。該光展量係以光束之剖面積與立體角(球面度)之積表示者,係以下述式(1)表示。
E= S×sinθ
2×π (1)
此處,E:光展量[mm
2・sr],S:光源體的發光面積[mm
2],θ:光源體的輻射角。
The optical characteristics of the detection
又,於本實施形態係構成為:於設在光源體12與光出射面1s之間之各光學系統13的各個位置(較佳係光出射面1s的鄰近處)之光展量,要在1mm
2・sr以下。
Also, in the present embodiment, it is configured such that the etendue at each position of each
攝影裝置2,具備:相機本體21,具有攝影元件21a;以及相機透鏡22,安裝於相機本體21,使得以工件W反射或散射的光成像。The
相機透鏡22,係具有構成為使光軸C2與主光線在工件W側(物側)成平行的物側遠心光學系統者(於下文中,亦稱為物側遠心透鏡),具備:收納在沿光軸方向(拍攝方向)延伸之圓筒形之透鏡殼體221內的複數片透鏡、以及開口光圈22a。在此相機透鏡22,藉由將開口光圈22a配置在複數片透鏡當中之前側透鏡群的焦點位置22f,而構成物側遠心光學系統。然後此相機透鏡22,將各透鏡配置成使其光學倍率成為2倍以上的高倍率。The
此相機透鏡22,具備同軸落射部23,將上述之檢測用聚光照明裝置1所出射的檢測光導入內部的同時,改變所導入之檢測光的方向以與拍攝方向一致。具體而言,此同軸落射部23如圖1所示,具備供檢測用聚光照明裝置1之末端部112安裝的照明安裝部231、以及使檢測光反射而改變其方向的半反射鏡232。The
照明安裝部231,係設在透鏡殼體221的側面而在與其軸向正交之方向上延伸的圓筒狀者。在其末端,形成供檢測用聚光照明裝置1之末端部112插入的照明安裝口231a。The
半反射鏡232,於透鏡殼體221內,設在比起開口光圈22a的位置更靠近工件W側、且係與從照明安裝口231a插入之光出射面1s相對向的位置。半反射鏡232,相對於拍攝方向傾斜約45°。The
在具有此種構成的同軸落射部23,藉由將檢測用聚光照明裝置1的末端部112插入照明安裝口231a,而將檢測用聚光照明裝置1的光出射面1s設置在與相機透鏡22的開口光圈22a的位置共軛之位置附近。In the coaxial epi-
若依如此構成之第1實施形態的檢測系統100,藉由利用係點光源之半導體雷射12a構成聚光照明裝置1的光源體12,並構成為使半導體雷射12a所發出的雷射光直接出射,而相較於使用LED作為光源體12者,可提高光出射面1s的輻射輝度、更且縮窄配光特性;所以在與高倍率之物側遠心光學系統組合的情況下,能以高利用效率使檢測光到達工件,可以提高在攝影裝置2之像面的輻射照度,提升拍攝時的亮度。According to the
而且由於此檢測用聚光照明裝置1,具備使該光源體12所出射的雷射光擴散的光斑消除器132,並在其光出射面1s設有藉由表面紋理處理所形成的光擴散面,所以可以藉由使光源體12所出射的雷射光擴散以提升配光的對稱性,而在提升拍攝時的亮度的同時,仍可提升在工件W面上之輻射照度的均勻性。Moreover, since the
<第2實施形態>
接著,針對使用本發明第2實施形態之檢測用聚光照明裝置1的檢測系統100,以不同於第1實施形態之特點為中心,進行說明。
<Second Embodiment>
Next, an
第2實施形態的檢測系統100,其整體構成與圖1所示之第1實施形態的檢測系統100相同。然後此第2實施形態的檢測用聚光照明裝置1,其特徵在於:光源體12係雷射螢光型者。具體而言,此光源體12如圖3所示,具備複數之半導體雷射12a、以及螢光體12b,並構成為將「複數之半導體雷射12a所出射的雷射光(激發光)照射於螢光體12b而使其激發以使螢光體12b產生的二次光」,予以出射。此光源體12,亦被稱為SLD(Super Luminescent Diode;超級二極體)光源等,如發光二極體(LED)般具有廣光譜,同調性較半導體雷射12a低,並且如半導體雷射12a般可出射高輝度的光。The
於本實施形態,螢光體12b係具備四邊約0.5mm的矩形發光面之顆粒狀者,在光軸C1上設置成使其發光面與光學系統13的光軸C1正交。複數之半導體雷射12a,在此係出射藍色波長之雷射光者,配置成從斜前方對螢光體12b的發光面照射光。具體而言,各半導體雷射12a,係設置成使其出射光軸與螢光體12b的發光面所形成的角度會是大約45。In the present embodiment, the
然後於此實施形態,檢測用聚光照明裝置1具備設在光源體12之前方的準直透鏡131,以作為光學系統13。此準直透鏡131,設置成使其光軸C1,會與呈圓筒形之照明殼體11的末端部112同軸。於此實施形態,在末端部112的內側並未設置柱狀透鏡133等的光學元件而係中空,形成已通過準直透鏡131的光所通行的內部空間S。然後此內部空間S所開口之末端部112的末端面,就會是光出射面1s。Then, in this embodiment, the
針對如此構成之本實施形態的檢測用聚光照明裝置1的光學特性,進行說明。此檢測用聚光照明裝置1,藉由使用雷射螢光型者作為光源體12,而可以提高光出射面1s的輻射輝度,並且縮窄其配光特性。具體而言,此實施形態的檢測用聚光照明裝置1,從光出射面1s出射的光之指向角(或半值角)係±5°以內;更具體而言,係±3.5°以內。又,其光源體12(具體而言,係螢光體12b)的光展量(Etendue),係1.0mm
2・sr以下;更具體而言,係0.6mm
2・sr以下。
The optical characteristics of the detection
若依如此構成之第2實施形態的檢測系統100,藉由使用係點光源之半導體雷射12a作為聚光照明裝置1的光源體12,而相較於使用LED作為光源體12者,可提高光出射面1s的輻射輝度、更且縮窄配光特性;所以在與高倍率之物側遠心光學系統組合的情況下,能以高利用效率使檢測光到達工件,可以提高在攝影裝置2之像面的輻射照度,提升拍攝時的亮度。According to the
而且由於此檢測用聚光照明裝置1,作為光源體12係使用所謂雷射螢光型者,亦即將半導體雷射12a所出射的雷射光(激發光)照射於螢光體12b而使其激發,以使螢光體12b發光,所以配光之對稱性較雷射光高,又可以出射如雷射光般高輝度的光;因此在提升拍攝時的亮度的同時,仍可提升在工件W面上之輻射照度的均勻性。And because this detecting
<配光特性之模擬>
接著,將模擬了光源體之構成不同的複數種檢測用聚光照明裝置的配光特性之結果,顯示於圖4。於此模擬結果,分別顯示下述各者之配光特性:(i)使光源體構成為將半導體雷射所發出的光直接出射的檢測用聚光照明裝置(標示為LD)、(ii)使光源體構成為將半導體雷射所發出的雷射光照射於螢光體而使其激發所產生的二次光予以出射的檢測用聚光照明裝置(標示為SLD)、(iii)使光源體構成為將發光二極體所發出的光予以出射的檢測用聚光照明裝置(標示為LED)。於此模擬,在(i)的檢測用聚光照明裝置(LD),係將準直透鏡與光斑消除器設置在光源體的光出射方向前方(從圖2去除柱狀透鏡133之構成),(ii)的檢測用聚光照明裝置(SLD),係將準直透鏡設在光源體的光出射方向前方(與圖3相同構成),(iii)的檢測用聚光照明裝置(LED),係將準直透鏡及柱狀透鏡設在光源體的光出射方向前方。
<Simulation of light distribution characteristics>
Next, the results of simulating the light distribution characteristics of a plurality of types of spotlight illumination devices for detection with different configurations of light source bodies are shown in FIG. 4 . In this simulation result, the light distribution characteristics of the following are respectively shown: (i) The light source body is configured as a spotlight illumination device for detection (marked as LD) that directly emits light emitted by a semiconductor laser, (ii) The light source body is configured to irradiate the laser light emitted by the semiconductor laser to the phosphor, and the secondary light generated by its excitation is emitted. Concentrated lighting device for detection (marked as LED) configured to emit the light emitted by the light-emitting diode. In this simulation, in (i) the spotlight illumination device (LD) for detection, the collimator lens and the spot remover are arranged in front of the light emitting direction of the light source body (the configuration of the
如圖4所示,在使光源體構成為將半導體雷射所發出的雷射光直接出射者(LD),可確認到相對輻射強度達峰值之50%以上的指向角,會是大約±5°以內。又,在使光源體構成為將雷射光照射於螢光體而使其激發所產生的二次光予以出射者(SLD),可確認到指向角會是大約±3.5°以內。As shown in Fig. 4, when the light source body is configured so that the laser light emitted by the semiconductor laser is directly emitted (LD), it can be confirmed that the directivity angle at which the relative radiation intensity reaches 50% or more of the peak value is about ±5° within. In addition, when the light source body is constructed so that the phosphor is irradiated with laser light and the secondary light generated by excitation is emitted (SLD), it has been confirmed that the directivity angle is within about ±3.5°.
<輻射照度的均勻性之模擬>
接著,使用第2實施形態的檢測用聚光照明裝置,將模擬了在使具有物側遠心光學系統的相機透鏡22之光學倍率變化(2倍、4倍)的情況下,在工件W面上之輻射照度的均勻性之結果,顯示於圖5。在此模擬,進行拍攝之相機本體21的攝影元件21a之感測器尺寸,設為相當於2/3吋者。
<Simulation of uniformity of irradiance>
Next, using the concentrating illumination device for detection of the second embodiment, simulated conditions on the surface of the workpiece W when the optical magnification of the
如圖5所示,由此模擬結果,可確認到不論光學倍率為2倍、或4倍,工件W面上之輻射照度的均勻性皆良好。尤其可確認到越提高光學倍率,越能提升工件W面上之輻射照度的均勻性。As shown in FIG. 5 , from the simulation results, it can be confirmed that the uniformity of the irradiance on the workpiece W surface is good regardless of the optical magnification of 2x or 4x. In particular, it has been confirmed that the higher the optical magnification is, the more the uniformity of the irradiance on the workpiece W surface can be improved.
<其他實施形態> 又,本發明並不限於上述實施形態。 <Other Embodiments> In addition, this invention is not limited to the said embodiment.
例如在上述第1實施形態,雖使光學系統13具備光斑消除器132、以及形成在光出射面1s的光擴散面之雙方以作為光擴散部,惟亦可僅具備其中任何一方,亦可不具備光擴散部。又,光擴散部,亦可為例如擴散板、或螢光體這樣的光擴散構件。For example, in the above-mentioned first embodiment, although the
又,於上述第2實施形態,雖使光源體12構成為從複數之半導體雷射12a對螢光體12b照射雷射光,惟不限於此。其他實施形態的光源體12,亦可構成為僅具備1個半導體雷射12a,而藉由該1個半導體雷射12a以使螢光體12b激發。In addition, in the above-mentioned second embodiment, although the
又,於上述各實施形態,係構成為使光源體12的光展量及在光學系統13之各個位置的光展量在1mm
2・sr以下,惟不限於此。於其他實施形態,亦可使光源體12及在光學系統13之各個位置的光展量超過1mm
2・sr。
Also, in each of the above-mentioned embodiments, the etendue of the
除此之外,本發明並不限於上述實施形態;在不脫離其旨趣的範圍內,可有各種變形,自不待贅言。 [產業上之可利用性] In addition, the present invention is not limited to the above-mentioned embodiments; various modifications can be made without departing from the scope of the gist. [Industrial availability]
若依上述之本發明的檢測系統,則在是為同軸落射結構而具有高倍率之物側遠心光學系統的檢測系統,可提升拍攝時的亮度。According to the above-mentioned detection system of the present invention, the detection system is a detection system with a high-magnification object-side telecentric optical system with a coaxial epi-projection structure, which can improve the brightness when shooting.
1:檢測用聚光照明裝置
1s:光出射面
11:照明殼體
12:光源體
12a:半導體雷射
12b:螢光體
13:光學系統
13f:焦點位置
100:檢測系統
111:筒身部
112:末端部
131:準直透鏡
132:光擴散元件(光斑消除器)
133:柱狀透鏡
2:攝影裝置
21:相機本體
21a:攝影元件
22:相機透鏡(遠心透鏡)
221:透鏡殼體
22a:開口光圈
22f:焦點位置
23:同軸落射部
231:照明安裝部
231a:照明安裝口
232:半反射鏡
C1,C2:光軸
S:內部空間
W:工件
1: Concentrating lighting device for
[圖1]示意性地顯示第1實施形態及第2實施形態的檢測系統之構成的圖式。 [圖2]示意性地顯示第1實施形態的檢測用聚光照明裝置之構成的圖式。 [圖3]示意性地顯示第2實施形態的檢測用聚光照明裝置之構成的圖式。 [圖4]顯示光源體之構成不同的複數種檢測用聚光照明裝置的配光特性之模擬結果的圖式。 [圖5](a)、(b)顯示第2實施形態的檢測用聚光照明裝置之輻射照度的均勻性之模擬結果的圖式。 [FIG. 1] A diagram schematically showing the configuration of the detection system of the first embodiment and the second embodiment. [ Fig. 2] Fig. 2 is a diagram schematically showing the configuration of the spotlight illumination device for detection according to the first embodiment. [ Fig. 3] Fig. 3 is a diagram schematically showing the configuration of a spotlight illuminating device for detection according to a second embodiment. [ Fig. 4 ] A diagram showing simulation results of light distribution characteristics of a plurality of types of detection spotlight illumination devices with different configurations of light source bodies. [ Fig. 5 ] (a) and (b) are graphs showing simulation results of uniformity of irradiance of the spotlight illumination device for detection according to the second embodiment.
1:檢測用聚光照明裝置 1: Concentrating lighting device for detection
1s:光出射面 1s: Light exit surface
11:照明殼體 11: Lighting housing
12:光源體 12: Light source body
12a:半導體雷射 12a: Semiconductor laser
13:光學系統 13: Optical system
13f:焦點位置 13f: Focus position
111:筒身部 111: barrel part
112:末端部 112: terminal part
131:準直透鏡 131: Collimating lens
132:光擴散元件(光斑消除器) 132: Light diffusion element (spot eliminator)
133:柱狀透鏡 133: Cylindrical lens
C1:光軸 C1: optical axis
Claims (7)
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