TW202321836A - Substrate processing system and substrate processing method - Google Patents

Abstract

A substrate processing system that is connected to an exposure device, the system comprising a substrate processing device which subjects a substrate to processing, and a first supply channel which connects the substrate processing device and the exposure device, and supplies the cooling water that was used by the substrate processing device to the exposure device.

Description

Substrate processing system and substrate processing method

The invention relates to a substrate processing system and a substrate processing method.

Patent Document 1 discloses a developing device comprising: a developing tank for developing; a developer storage tank for storing developer supplied to the developing tank; and a circulating cooling system for circulating cooling water to cool the developer in the developer storage tank. [Prior Technical Literature] 〔Patent Document〕

Patent Document 1: Japanese Patent Laid-Open No. 2011-192775

[Problem to be solved by the invention]

The technology of the present invention can reduce the total consumption of cooling water in the substrate processing system and the exposure device. [How to solve the problem]

One aspect of the present invention is a substrate processing system connected to an exposure device. The substrate processing system includes: a substrate processing device for processing a substrate; The cooling water used by the substrate processing apparatus is supplied to the exposure apparatus. [Effect of the invention]

According to the present invention, the total consumption of cooling water in the substrate processing system and the exposure device can be reduced.

[Preferable form of implementing the invention]

In the manufacturing process of semiconductor devices, etc., a predetermined process is performed to form a photoresist pattern on a substrate such as a semiconductor wafer (hereinafter referred to as "wafer"). The above-mentioned predetermined processing includes, for example: photoresist coating treatment, supplying photoresist liquid onto the substrate to form a photoresist coating; exposure treatment, exposing the above coating film; heating treatment, heating the substrate before and after the exposure treatment; and developing In the treatment, the exposed film is developed.

The above-mentioned photoresist coating treatment, heat treatment, and development treatment are respectively performed in the photoresist coating unit, heat treatment unit, and development treatment unit. These units, which perform necessary processing other than exposure processing, are mounted on a substrate processing device, that is, a coating and development processing device. This coating and development processing device is used in connection with an exposure device for exposure processing.

A large amount of cooling water is used in the coating and development processing equipment. For example, cooling water is used to cool a developer used for development or heat-treated substrates. In addition, cooling water is also used in the exposure apparatus. Therefore, the total amount of cooling water required in the coating and developing processing equipment and the exposure equipment is very large.

In view of this, the technology of the present invention reduces the total consumption of cooling water in the substrate processing system including substrate processing devices such as coating and developing processing devices and exposure devices.

Hereinafter, a substrate processing system and a substrate processing method according to the present embodiment will be described with reference to the drawings. In addition, in this specification and drawings, elements having substantially the same functional configuration are assigned the same symbols, and repeated explanations are omitted.

(first embodiment) ＜Substrate processing system＞ FIG. 1 schematically shows the configuration of a substrate processing system according to a first embodiment. FIG. 2 is an explanatory diagram showing a schematic internal configuration of a coating and development processing apparatus as a substrate processing apparatus included in the substrate processing system of FIG. 1 . FIG. 3 shows an example of a supply form of ambient air to a coating and development processing apparatus.

As shown in FIG. 1 , the substrate processing system 1 includes a coating and development processing device 2 , a cooling water supply device 3 , and a gas supply device 4 . An exposure device 5 is connected to the coating and development processing device 2 .

The coating and development processing device 2 processes the wafer W serving as a substrate. As shown in FIG. unloading; and the processing station 11 is provided with a plurality of various processing units that perform predetermined processing on the wafer W. Moreover, the coating and development processing device 2 has a structure that connects the cassette station 10, the processing station 11, and the interface station 12 into one body, and the aforementioned interface station 12 is between the processing station 11 and the exposure device 5 adjacent to the processing station 11. The wafer W is transferred between them.

The cassette station 10 is provided with a cassette loading platform 20 . The cassette mounting table 20 is provided with a plurality of cassette mounting plates 21 for mounting the cassette C when loading and unloading the cassette C from the outside of the coating and developing processing apparatus 2 .

The cassette station 10 is provided with: a wafer transfer unit 23 freely movable on the transfer lane 22 extending along the X direction. The wafer transfer unit 23 can also move freely in the vertical direction and the direction around the vertical axis (theta direction), and can transfer the cassette C on each cassette loading plate 21 to the third block G3 of the processing station 11 The wafer W is transferred between cells (not shown).

The processing station 11 is provided with a plurality of, for example, four blocks G1, G2, G3, G4 including various units. For example, the front side of the processing station 11 (the negative side of the X direction in FIG. 2 ) is provided with a first block G1, and the back side of the processing station 11 (the positive side of the X direction in FIG. 2 ) is provided with a second block G2. Also, the cassette station 10 side of the processing station 11 (the negative side in the Y direction in FIG. 2 ) is provided with a third block G3, and the interface station 12 side of the processing station 11 (the positive side in the Y direction in FIG. 2 ) is provided with a third block G3. Four block G4.

The first block G1 is provided with a liquid processing unit 30 such as a photoresist coating unit or a developing processing unit. A plurality of liquid processing units 30 are arranged horizontally and vertically as shown in FIG. 3 . The liquid processing unit 30 supplies a predetermined processing liquid onto the wafer W by, for example, a spin coating method. In the spin coating method, for example, the processing liquid is sprayed onto the wafer W from a nozzle, and the wafer W is rotated to spread the processing liquid on the surface of the wafer W.

As shown in FIG. 2 , the second block G2 is provided with a heat treatment unit 40 for performing heat treatment such as heating or cooling the wafer W. Like the liquid processing unit 30, a plurality of heat processing units 40 are arranged horizontally and vertically. The heat treatment unit 40 includes a heating plate 41 and a cooling plate 42 . The heating plate 41 places the wafer W and heats the placed wafer W. The cooling plate 42 places the wafer W and cools the placed wafer W. In one embodiment of the present invention, cooling water channels are provided inside the cooling plate 42 .

For example, the third block G3 and the fourth block G4 are respectively provided with multi-stage configuration transfer units (not shown).

A wafer transfer area D is formed in the area surrounded by the first block G1 to the fourth block G4. In the wafer transfer area D, a wafer transfer unit 50 is arranged.

The wafer transfer unit 50 has, for example, a transfer arm 50 a freely movable in the Y direction, the X direction, the θ direction, and the vertical direction. The wafer transfer unit 50 moves in the wafer transfer area D, and can transfer the wafer W to the surrounding first block G1, second block G2, third block G3, and fourth block G4 reservation unit.

In addition, a wafer transfer unit 60 is provided beside the positive side in the X direction of the third block G3. The wafer transfer unit 60 has, for example, a transfer arm 60 a freely movable in the X direction, the θ direction, and the up and down directions. The wafer transfer unit 60 can move up and down while supporting the wafer W, and transfer the wafer W to each transfer unit (not shown) in the third block G3.

The interface station 12 is provided with a wafer handling unit 70 and a transfer unit 71 . The wafer transfer unit 70 has, for example, a transfer arm 70 a freely movable in the Y direction, the θ direction, and the vertical direction. The wafer transfer unit 70 transfers the wafer W between the transfer unit 71 and the exposure apparatus 5 in the fourth block G4 , for example, while the wafer W is supported by the transfer arm 70 a.

As shown in FIG. 1 , the cooling water supply device 3 has: supply paths 100 and 110 ; and a return path 120 . The supply path 100 supplies the cooling water used in the coating and developing processing device 2 to the coating and developing processing device 2 . In the coating and development processing apparatus 2 , the cooling water is used, for example, to cool the wafer W by the cooling plate 42 or to cool a processing liquid such as a developer. The cooling water supplied to the coating and developing processing device 2 needs to be set at, for example, 25° C. or lower, and the temperature of the cooling water supplied to the coating and developing processing device 2 is, for example, 15° C. to 25° C. actually. In addition, the temperature of the cooling water after use in the coating and developing treatment device 2 depends on the purpose and usage of the cooling water, and is, for example, 25°C to 35°C.

The supply channel 110 connects the coating and development processing device 2 and the exposure device 5 , and supplies the cooling water used in the coating and development processing device 2 to the exposure device 5 . In the exposure apparatus 5, cooling water is used for cooling of the light source for exposure processing, etc. In many cases, even if the temperature of the cooling water used in the exposure device 5 is higher than that used in the coating and development processing device 2, it is allowed, and the required temperature is, for example, 35°C or lower.

The return channel 120 is used to return the cooling water used in the exposure device 5 to the cooling unit (not shown). The cooling water returned to the cooling unit is supplied to the coating and development processing device 2 through the supply path 100 again. The supply passages 130, 140 of the cooling water supply device 3 will be described later.

The gas supply device 4 supplies ambient gas during substrate processing to the coating and development processing device 2 . While the coating and development processing device 2 and the exposure device 5 are installed on the upper surface of the floor F in the clean room CR, the gas supply device 4 is installed in the underfloor space UR which is a space below the floor F. The floor F is composed of an air-permeable floor material commonly called a grating. Therefore, the ambient air system of the underfloor space UR is derived from the ambient air of the clean room CR. Accordingly, the ambient air in the installation area in the present invention includes not only the ambient air in the clean room CR where the coating and developing processing device 2 and the exposure device 5 are installed, but also the ambient gas in the clean room CR where the coating and developing processing device 2 and the exposure device 5 are installed. The ambient gas of the underfloor space UR of the floor F of the device 5 and the like.

The gas supply device 4 has: an intake part 201, which takes in the ambient air in the underfloor space UR; and adjusts the temperature and humidity of the ambient air in the underfloor space UR taken in by the intake part 201, and supplies it as ambient air for coating. Development processing device 2. The gas supply device 4 has, for example, a cooling unit 203 , a heating unit 204 , and a humidifying unit 205 in order from upstream in a flow path in the casing 202 . The cooling unit 203 is constituted by, for example, a cooling coil. The cooling unit 203 has, for example, the function of cooling the gas taken in from the taking in unit 201 to a temperature below the dew point using the cooling water or refrigerant supplied from the cooling unit 206 to perform dehumidification.

The cooling unit 206 is equipped with various devices for realizing a refrigeration cycle, such as a compressor, an expansion valve, and the like. The cooling unit 206 can also be constituted by, for example, a heat pump. Furthermore, the cooling unit 206 shown in the figure has a configuration in which the refrigerant whose temperature has been raised in the refrigerating cycle is cooled by cooling water (for example, 15° C. to 25° C.) supplied from the outside. Therefore, the cooling water used in the cooling unit 206 and discharged from the cooling unit 206 is increasing in temperature (for example, 25° C. to 40° C.).

The heating unit 204 functions as a so-called reheat heater, and may be, for example, a heater that generates heat by supplying electric power, or a heating coil that heats by supplying hot water.

As the humidifying unit 205, for example, a humidifier configured to spray water or supply steam can be used.

With the cooling unit 203, heating unit 204, and humidifying unit 205 listed above, the gas taken in by the intake unit 201 is firstly dehumidified by the cooling unit 203, and then heated to the desired temperature by the heating unit 204, and then Humidification is performed by the humidification unit 205 to a desired humidity. Then, the air adjusted to the desired temperature and humidity as described above is supplied to the coating and development processing apparatus 2 as ambient air by the fan 207 through, for example, the duct 210 . In addition, the conduit 210 may be a closed flow path through which the gas circulates without leaking the gas, and may be, for example, a pipe or a tube.

The ambient gas whose temperature and humidity have been adjusted by the gas supply device 4, as shown in FIG. to the top wall of each section. The ambient gas supplied to the top wall of each stage is supplied to each liquid processing unit 30 . The temperature and humidity of the ambient air are generally, for example, 23° C. and 45% RH, but the appropriate temperature and humidity are not limited to these depending on the type of liquid processing unit 30 to be supplied and the contents of processing.

As shown in FIG. 1 , the cooling water supply device 3 further includes supply channels 130 and 140 . The supply channel 130 supplies the cooling water used in the gas supply device 4 to the gas supply device 4 . The supply channel 130 supplies the cooling water used in the cooling unit 206 of the gas supply device 4 to the cooling unit 206 , specifically. The temperature of the cooling water supplied to the cooling unit 206 is, for example, 15° C. to 25° C. as described above. Also, the temperature of the cooling water after use in the cooling unit 206 is, for example, 25°C to 40°C.

The supply channel 140 connects the gas supply device 4 and the exposure device 5 , and supplies the cooling water used in the gas supply device 4 to the exposure device 5 .

In this embodiment, the supply lane 110 and the supply lane 140 merge on the exposure device 5 side. Therefore, the cooling water supply device 3 mixes the cooling water used in the coating and development processing device 2 and the cooling water used in the gas supply device 4 , and supplies them to the exposure device 5 . In addition, the cooling water used in the exposure device 5 returns to the cooling unit (not shown) through the return channel 120 and is cooled to a predetermined temperature, and is distributed to the supply channel 100 and the supply channel 130, and is supplied to the coating and development processing device again. 2 and gas supply device 4. In other words, in this embodiment, the supply channels 100, 110 and the return channel 120 constitute the circulation channel for the cooling water used in the coating and development treatment device 2 and the exposure device 5, that is, the first circulation channel, and the supply channels 130, 140 and the return channel 120 constitutes a circulation channel for cooling water for the gas supply device 4 and the exposure device 5 , that is, the second circulation channel. In addition, piping such as the return path 120, cooling means, and the like are shared between the first circulation path and the second circulation path.

In addition, although not shown, the cooling water supply device 3 is provided with a pressure feeding mechanism such as a pump for pressure feeding the cooling water cooled in the cooling unit to the coating and developing processing device 2 and the gas supply device 4 .

In addition, the substrate processing system 1 is provided with a control device U. The control device U is, for example, a computer including a processor such as a CPU (Central Processing Unit) or a memory, and has a program storage unit (not shown). The program storage unit stores a program for adjusting the temperature and humidity in the gas supply device 4 . Of course, this control device U can also be shared with a control device that controls various processing units or transport units mounted on the substrate processing system 1 , and a control device that controls various processes of the exposure device 5 . Moreover, the above-mentioned program can also be recorded in a computer-readable storage medium, and can be installed to the control device from the storage medium. The memory medium mentioned above may be temporary or non-temporary. Moreover, the above-mentioned programs can also be installed via the network. Furthermore, a part or all of the programs may also be realized by using dedicated hardware (circuit board).

＜Main effects＞ As mentioned above, in this embodiment, the substrate processing system 1 connected to the exposure device 5 is provided with: a supply channel 110 connecting the coating and developing processing device 2 and the exposure device 5, and the cooling water used in the coating and developing processing device 2 It is supplied to the exposure device 5 . That is, in this embodiment, instead of separately providing the supply path for the cooling water of the coating and development processing device 2 and the supply path of the cooling water for the exposure device 5, the supply path 110 is provided so that the coating and development The cooling water used in the processing device 2 is also used in the exposure device 5 . Therefore, according to this embodiment, the total consumption of cooling water in the substrate processing system 1 and the exposure device 5 can be reduced.

In addition, in the present embodiment, the substrate processing system 1 includes a gas supply device 4 for supplying ambient gas to the coating and development processing device 2 . Furthermore, the substrate processing system 1 includes a supply channel 140 that connects the gas supply device 4 and the exposure device 5 , and supplies the cooling water used in the gas supply device 4 to the exposure device 5 . That is, in this embodiment, the above-mentioned supply path 140 is provided so that the cooling water supplied to the gas supply device 4 can also be used in the exposure device 5 . Therefore, according to this embodiment, the total consumption of cooling water in the substrate processing system 1 and the exposure device 5 can be further reduced.

That is, in this embodiment, the allowable temperature of the cooling water in the exposure device 5 is higher than that of the coating and development processing device 2 or the gas supply device 4, thereby reducing the cooling water used in the coating and development processing device 2 or the gas supply device 4. The cooling water is reused in the exposure device 5, thereby suppressing the total amount of cooling water used.

Furthermore, in the present embodiment, the supply channel 110 and the supply channel 140 merge on the exposure device 5 side, and the cooling water supply device 3 uses the cooling water used in the coating and developing treatment device 2 and the gas supply device 4. The cooling water is mixed and supplied to the exposure device 5 . Therefore, for example, the temperature of the cooling water used in the gas supply device 4 is higher than the allowable temperature of the cooling water in the exposure device 5, and the temperature of the cooling water used in the coating and developing processing device 2 is lower than the above-mentioned allowable temperature. In this case, cooling water lower than the above-mentioned allowable temperature can be supplied to the exposure device 5 by mixing as described above.

(Second Embodiment) Fig. 4 schematically shows the configuration of a substrate processing system according to a second embodiment. In the cooling water supply device 3A of this embodiment, as shown in the figure, a flow rate adjustment valve 301 as a first flow rate adjustment part is provided in the supply path 110A connecting the coating and development processing device 2 and the exposure device 5 . In addition, in the supply channel 140A connecting the gas supply device 4 and the exposure device 5, a flow rate adjustment valve 302 as a second flow rate adjustment unit is provided. The flow rate adjustment valve 301 is specifically provided in the supply path 110A closer to the coating and development processing apparatus 2 side than the part where it merges with the supply path 140A. Moreover, the flow rate adjustment valve 302 is specifically provided in the supply channel 140A closer to the gas supply device 4 side than the part where it merges with the supply channel 110A. Furthermore, in this embodiment, a temperature sensor 310 is provided to measure the temperature of cooling water supplied to the exposure device 5 . The temperature sensor 310 is, specifically, provided at the junction of the supply channel 110A and the supply channel 140A.

Moreover, in this embodiment, the control device U controls the flow rate adjustment valves 301 and 302 based on the measurement result of the temperature sensor 310, and adjusts the cooling water supplied to the exposure device 5 through the supply channel 110A and the cooling water supplied to the exposure device 5 through the supply channel 140A. The mixing ratio of the cooling water to the exposure device 5. Thereby, the temperature supplied to the exposure apparatus 5 from 3 A of cooling water supply apparatuses can be set to an appropriate one. Specifically, when the temperature of either the cooling water used in the coating and development processing device 2 or the cooling water used in the gas supply device 4 is higher than the allowable temperature of the cooling water in the exposure device 5 , the temperature supplied from the cooling water supply device 3A to the exposure device 5 can be set to be below the allowable temperature.

Also, as in this embodiment, when the temperature sensor 310 is provided, the control device U can also notify the temperature sensor 310 of the temperature information of the cooling water supplied to the exposure device 5. Exposure device 5. For example, the exposure device 5 can determine whether or not the exposure device 5 can be appropriately cooled using the cooling water supplied to the exposure device 5 based on the notified information on the temperature of the cooling water supplied to the exposure device 5 . In addition, the information about the cooling water supplied from the cooling water supply device 3 to the exposure device 5 (hereinafter referred to as cooling water information) notified to the exposure device 5 by the control device U is not limited to temperature information. For example, a flow sensor 311 for measuring the flow rate of cooling water supplied to the exposure device 5 may also be provided, and the control device U may notify the exposure device 5 of the measurement result of the flow sensor 311 as cooling water information. . In addition, the flow rate sensor 311 is specifically provided, for example, at the junction of the supply channel 110A and the supply channel 140A.

(third embodiment) Fig. 5 schematically shows the configuration of a substrate processing system according to a third embodiment. The cooling water supply apparatus 3B of this embodiment is provided with the cooling unit 320 as a cooling part which cools the cooling water supplied to the exposure apparatus 5. As shown in FIG. The cooling unit 320 cools the cooling water supplied to the exposure device 5 by exchanging heat with other cooling water, for example. The cooling unit 320 is, for example, provided with a circulation path 321 for the above-mentioned other cooling water, and the circulation path 321 is provided with a cooling unit (not shown) that cools the above-mentioned other cooling water that has been heated up by heat exchange.

Moreover, the cooling unit 320 is provided in the confluence part of the supply channel 110B and the supply channel 140B in the illustration, wherein the aforementioned supply channel 110B is connected to the coating and development processing device 2 and the exposure device 5, and the aforementioned supply channel 140B is connected to the gas supply device 4 with exposure device 5.

By providing the cooling unit 320 as described above, the temperature of the cooling water mixed with the cooling water used in the coating and development processing device 2 and the cooling water used in the gas supply device 4 can be more reliably set to the exposure device 5 Below the allowable temperature of the cooling water. In addition, the cooling unit 320 can be disposed at the junction of the supply channel 110B and the supply channel 140B, thereby suppressing an increase in the total usage of cooling water caused by the cooling unit 320 .

However, the arrangement position of the cooling unit 320 is not limited to the above example. For example, it may be provided in any one of the side closer to the coating and development processing device 2 than the above-mentioned confluence part in the supply path 110B, or the side closer to the gas supply device 4 than the above-mentioned confluence part in the supply path 140B, and may also be located on both sides.

(Fourth Embodiment) Fig. 6 schematically shows the configuration of a substrate processing system according to a fourth embodiment. In the cooling water supply device 3C of this embodiment, as shown in the figure, a pump 331 for boosting the pressure of the cooling water in the supply channel 110C is provided in the supply channel 110C connecting the coating and development processing device 2 and the exposure device 5 . In addition, in the supply channel 140C connecting the gas supply device 4 and the exposure device 5, a pump 332 for boosting the pressure of the cooling water in the supply channel 140C is provided. Specifically, the pump 331 is provided, for example, closer to the coating and development processing apparatus 2 side in the supply path 110C than the confluence portion with the supply path 140C. Moreover, the pump 332 is specifically provided in the supply channel 140C closer to the gas supply device 4 side than the part where it merges with the supply channel 110C.

According to this configuration, even if the pressure loss in the cooling water flow path in the coating and development processing device 2 is large, or the pressure loss in the cooling water flow path in the gas supply device 4 is large, it is possible to flow from the cooling water supply device 3C to the cooling water supply device 4. The exposure device 5 supplies cooling water at an appropriate pressure, that is, an appropriate flow rate.

(Modification of Fourth Embodiment) Fig. 7 schematically shows the configuration of a substrate processing system according to a modified example of the fourth embodiment. In this example, the pump 340 is provided at the confluence part of the supply channel 110D and the supply channel 140D, and the aforementioned pump 340 integrates the following pumps: the cooling in the supply channel 110D connecting the coating and developing processing device 2 and the exposure device 5 A pump for boosting the pressure of water; and a pump for boosting the pressure of the cooling water in the supply channel 140D connecting the gas supply device 4 and the exposure device 5 . In other words, the pump for supply channel 110D also doubles as the pump for supply channel 140D. According to this configuration, cooling water can be supplied to the exposure device 5 at an appropriate pressure, that is, at an appropriate flow rate, regardless of the pressure loss in the coating and development processing device 2 or in the gas supply device 4 .

Moreover, according to this example, since the number of pumps can be reduced, cost reduction can be achieved.

It should be understood that all features of the embodiments disclosed in this specification are illustrative rather than limiting. The above-mentioned embodiments can also be omitted, substituted, and changed in various forms without deviating from the scope and gist of the attached invention claims.

1: Substrate processing system 2: Coating and developing treatment device 3: Cooling water supply device 3A~3C: cooling water supply device 4: Gas supply device 5: Exposure device 10: Box station 11: Processing station 12:Interface station 20: Cassette loading table 21: Cassette loading plate 22: Carrying lane 23:Wafer handling unit 30: Liquid Handling Unit 40: Heat treatment unit 41: heating plate 42: cooling plate 50:Wafer handling unit 50a: Carrying arm 60:Wafer handling unit 60a: Carrying arm 70:Wafer handling unit 70a: Carrying arm 71: transfer unit 81,82: Main Director 100: supply road 110: supply road 110A~110D: supply road 120: return road 130: supply road 140: supply road 140A~140D: supply road 201: Import Department 202: Casing 203: cooling department 204: heating department 205: humidification department 206: cooling unit 207: fan 210: Conduit 211,212: Catheters 301: Flow adjustment valve 302: Flow adjustment valve 310: temperature sensor 311: Flow sensor 320: cooling unit 321: Loop 331: pump 332: pump 340: pump C: Cassette CR: clean room D: Wafer handling area F: floor G1: the first block G2: the second block G3: The third block G4: The fourth block U: Control unit UR: Underfloor space W: Wafer

FIG. 1 schematically shows the configuration of a substrate processing system according to a first embodiment. FIG. 2 is an explanatory diagram showing a schematic internal configuration of a coating and development processing apparatus as a substrate processing apparatus included in the substrate processing system of FIG. 1 . FIG. 3 shows an example of a supply form of ambient air to a coating and development processing apparatus. Fig. 4 schematically shows the configuration of a substrate processing system according to a second embodiment. Fig. 5 schematically shows the configuration of a substrate processing system according to a third embodiment. Fig. 6 schematically shows the configuration of a substrate processing system according to a fourth embodiment. Fig. 7 schematically shows the configuration of a substrate processing system according to a modified example of the fourth embodiment.

1: Substrate processing system

2: Coating and developing treatment device

3: Cooling water supply device

4: Gas supply device

5: Exposure device

100: supply road

110: supply road

120: return road

130: supply road

140: supply road

201: Import Department

202: Casing

203: cooling department

204: heating department

205: humidification department

206: cooling unit

207: fan

210: Conduit

CR: clean room

F: floor

U: Control unit

UR: Underfloor space

Claims (9)

A substrate processing system is a substrate processing system connected to an exposure device, comprising: a substrate processing device for processing the substrate; and The first supply channel connects the substrate processing device and the exposure device, and supplies cooling water used in the substrate processing device to the exposure device. For example, the substrate processing system of claim 1 further has: a gas supply device for supplying ambient gas during substrate processing to the substrate processing device; and The second supply channel connects the gas supply device and the exposure device, and supplies the cooling water used in the gas supply device to the exposure device. For example, the substrate processing system of claim 2 further has: a first flow adjustment unit that adjusts the supply of cooling water from the first supply channel; and The second flow adjustment unit adjusts the supply amount of the cooling water from the second supply channel. The substrate processing system according to claim 3, wherein, The mixing ratio of the cooling water from the first supply channel and the cooling water from the second supply channel is adjusted by the first flow rate adjustment part and the second flow rate adjustment part. The substrate processing system according to any one of claims 2 to 4 further includes: a first pump to increase the pressure of the cooling water in the first supply channel; and The second pump increases the pressure of the cooling water in the second supply passage. The substrate processing system according to claim 5, wherein, The first pump is arranged at the junction of the first supply channel and the second supply channel, and also serves as the second pump. The substrate processing system according to any one of claims 1 to 6 further includes: The cooling unit cools the cooling water supplied to the exposure device. The substrate processing system according to any one of claims 1 to 7, wherein, The exposure device is notified of information about the cooling water supplied to the exposure device. A substrate processing method using a substrate processing system connected to an exposure device, wherein, The cooling water used in the substrate processing apparatus is supplied to the exposure apparatus.

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