TW202315462A - Target supply apparatus - Google Patents

Target supply apparatus Download PDF

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Publication number
TW202315462A
TW202315462A TW111118622A TW111118622A TW202315462A TW 202315462 A TW202315462 A TW 202315462A TW 111118622 A TW111118622 A TW 111118622A TW 111118622 A TW111118622 A TW 111118622A TW 202315462 A TW202315462 A TW 202315462A
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Taiwan
Prior art keywords
actuator
partition
actuation signal
section
conduit
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TW111118622A
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Chinese (zh)
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席爾多斯 威爾漢默斯 爵森
鮑伯 洛琳格
迪特瑪 烏韋 赫伯特 翠斯
約書亞 馬可 路肯斯
喬治 歐雷格維齊 維斯晨庫
愛得恩 喬漢 布斯
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荷蘭商Asml荷蘭公司
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Publication of TW202315462A publication Critical patent/TW202315462A/en

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    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05GX-RAY TECHNIQUE
    • H05G2/00Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001Production of X-ray radiation generated from plasma
    • H05G2/003Production of X-ray radiation generated from plasma the plasma being generated from a material in a liquid or gas state
    • H05G2/006Production of X-ray radiation generated from plasma the plasma being generated from a material in a liquid or gas state details of the ejection system, e.g. constructional details of the nozzle
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05BSPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B1/00Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means
    • B05B1/02Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means designed to produce a jet, spray, or other discharge of particular shape or nature, e.g. in single drops, or having an outlet of particular shape
    • B05B1/08Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means designed to produce a jet, spray, or other discharge of particular shape or nature, e.g. in single drops, or having an outlet of particular shape of pulsating nature, e.g. delivering liquid in successive separate quantities ; Fluidic oscillators
    • B05B1/083Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means designed to produce a jet, spray, or other discharge of particular shape or nature, e.g. in single drops, or having an outlet of particular shape of pulsating nature, e.g. delivering liquid in successive separate quantities ; Fluidic oscillators the pulsating mechanism comprising movable parts
    • B05B1/086Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means designed to produce a jet, spray, or other discharge of particular shape or nature, e.g. in single drops, or having an outlet of particular shape of pulsating nature, e.g. delivering liquid in successive separate quantities ; Fluidic oscillators the pulsating mechanism comprising movable parts with a resiliently deformable element, e.g. sleeve
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05BSPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B17/00Apparatus for spraying or atomising liquids or other fluent materials, not covered by the preceding groups
    • B05B17/04Apparatus for spraying or atomising liquids or other fluent materials, not covered by the preceding groups operating with special methods
    • B05B17/06Apparatus for spraying or atomising liquids or other fluent materials, not covered by the preceding groups operating with special methods using ultrasonic or other kinds of vibrations
    • B05B17/0607Apparatus for spraying or atomising liquids or other fluent materials, not covered by the preceding groups operating with special methods using ultrasonic or other kinds of vibrations generated by electrical means, e.g. piezoelectric transducers
    • B05B17/0623Apparatus for spraying or atomising liquids or other fluent materials, not covered by the preceding groups operating with special methods using ultrasonic or other kinds of vibrations generated by electrical means, e.g. piezoelectric transducers coupled with a vibrating horn
    • B05B17/063Apparatus for spraying or atomising liquids or other fluent materials, not covered by the preceding groups operating with special methods using ultrasonic or other kinds of vibrations generated by electrical means, e.g. piezoelectric transducers coupled with a vibrating horn having an internal channel for supplying the liquid or other fluent material
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05BSPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B17/00Apparatus for spraying or atomising liquids or other fluent materials, not covered by the preceding groups
    • B05B17/04Apparatus for spraying or atomising liquids or other fluent materials, not covered by the preceding groups operating with special methods
    • B05B17/06Apparatus for spraying or atomising liquids or other fluent materials, not covered by the preceding groups operating with special methods using ultrasonic or other kinds of vibrations
    • B05B17/0607Apparatus for spraying or atomising liquids or other fluent materials, not covered by the preceding groups operating with special methods using ultrasonic or other kinds of vibrations generated by electrical means, e.g. piezoelectric transducers
    • B05B17/0653Details
    • B05B17/0669Excitation frequencies
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05BSPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B17/00Apparatus for spraying or atomising liquids or other fluent materials, not covered by the preceding groups
    • B05B17/04Apparatus for spraying or atomising liquids or other fluent materials, not covered by the preceding groups operating with special methods
    • B05B17/06Apparatus for spraying or atomising liquids or other fluent materials, not covered by the preceding groups operating with special methods using ultrasonic or other kinds of vibrations
    • B05B17/0607Apparatus for spraying or atomising liquids or other fluent materials, not covered by the preceding groups operating with special methods using ultrasonic or other kinds of vibrations generated by electrical means, e.g. piezoelectric transducers
    • B05B17/0653Details
    • B05B17/0661Transducer materials

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Injection Moulding Of Plastics Or The Like (AREA)
  • Powder Metallurgy (AREA)
  • Continuous Casting (AREA)

Abstract

A system includes: a conduit including an orifice configured to fluidly couple to a reservoir and to emit molten target material; an actuator including at least a first zone and a second zone that is between the first zone and the orifice, where motion of the first zone and the second zone is transferred to an interior of the conduit; and a controller configured to apply a first actuation signal to the first zone and a second actuation signal to the second zone. The second actuation signal has a higher frequency than the first actuation signal.

Description

目標供應設備target provisioning device

本發明係關於一種目標供應設備。目標供應設備可用於產生極紫外線(EUV)光源中的目標。The present invention relates to a target provisioning device. Target delivery equipment can be used to generate targets in extreme ultraviolet (EUV) light sources.

目標設備可用於產生流體材料之串流或射流。舉例而言,噴嘴設備可用於產生轉換成發射極紫外線(EUV)光之電漿的目標。Target devices can be used to create streams or jets of fluid material. For example, a nozzle device can be used to generate a target that is converted into a plasma that emits extreme ultraviolet (EUV) light.

EUV光可為例如波長為100奈米(nm)或更小(有時亦稱為軟x射線)且包括波長為例如20 nm或更小、在5與20 nm之間或在13與14 nm之間的光之電磁輻射,可用於光微影程序中以藉由在抗蝕劑層中發起聚合而在基板(例如,矽晶圓)中產生極小特徵。用以產生EUV光之方法包括但不一定限於用在EUV範圍內之發射譜線將包括例如氙、鋰或錫之元素的材料轉換成電漿狀態。在常常被稱為雷射產生電漿(LPP)之一個此類方法中,可藉由用可稱為驅動雷射之經放大光束來輻照例如呈材料小滴、板、帶、串流或叢集之形式的目標材料而產生所需電漿。對於此程序,通常在例如真空腔室之密封容器中產生電漿,且使用各種類型之度量衡設備來監視電漿。EUV light can be, for example, at a wavelength of 100 nanometers (nm) or less (sometimes also referred to as soft x-rays) and includes wavelengths of, for example, 20 nm or less, between 5 and 20 nm, or between 13 and 14 nm Electromagnetic radiation of light in between can be used in photolithography processes to create extremely small features in a substrate (eg, a silicon wafer) by initiating polymerization in a resist layer. Methods to generate EUV light include, but are not necessarily limited to, converting materials including elements such as xenon, lithium, or tin into a plasmonic state with emission lines in the EUV range. In one such method, often referred to as laser-produced plasma (LPP), laser radiation can be obtained by irradiating, for example, material droplets, slabs, strips, streams, or Target material in the form of clusters to generate the desired plasma. For this process, the plasma is typically generated in a sealed container, such as a vacuum chamber, and various types of metrology equipment are used to monitor the plasma.

在一個態樣中,系統包括:一導管,其包括經組態以流體耦接至一儲集器且發射熔融目標材料之一孔口;一致動器,其包括至少一第一分區及位於該第一分區與該孔口之間的一第二分區,其中該第一分區及該第二分區之運動經傳送至該導管之一內部;及一控制器,其經組態以將一第一致動信號施加至該第一分區且將一第二致動信號施加至該第二分區。該第二致動信號具有比該第一致動信號更高之一頻率。In one aspect, a system includes: a conduit including an orifice configured to be fluidly coupled to a reservoir and emit molten target material; an actuator including at least a first section and located at the a second zone between the first zone and the orifice, wherein motion of the first zone and the second zone is transmitted to an interior of the conduit; and a controller configured to transmit a first zone An actuation signal is applied to the first partition and a second actuation signal is applied to the second partition. The second actuation signal has a higher frequency than the first actuation signal.

實施可包括以下特徵中之一或多者。Implementations can include one or more of the following features.

該第二分區可小於該第一分區。The second partition can be smaller than the first partition.

該系統亦可包括複數個致動器電極。在此等實施中,至少一個致動器電極可與該第一分區及該第二分區中之每一者相關聯;該第一致動信號及該第二致動信號中之每一者可包括具有一頻譜之一電信號;且,為了將一特定致動信號施加至該致動器之一特定分區,該控制器可經組態以將一電信號施加至與該特定分區相關聯之該致動器電極。至少一個電信號之該頻譜可包括多於一個頻率。The system may also include a plurality of actuator electrodes. In such implementations, at least one actuator electrode can be associated with each of the first partition and the second partition; each of the first actuation signal and the second actuation signal can be includes an electrical signal having a frequency spectrum; and, in order to apply a specific actuation signal to a specific zone of the actuator, the controller can be configured to apply an electrical signal to the the actuator electrodes. The frequency spectrum of at least one electrical signal may comprise more than one frequency.

該致動器可包括安裝至該導管之一外部的一單件材料;該致動器電極可位於該致動器之一外部上,且該等致動器電極可在空間上彼此分離。在一些實施中,該致動器包括一套管,該套管包括:一第一末端;一第二末端;一內壁,自該第一末端延伸至該第二末端且機械耦接至該導管之該外部;該第二末端比該第一末端更接近該孔口;該致動器之該第一分區為該套管之一第一部分,且該致動器之該第二分區為該套管之一第二部分;且至少一個表面特徵形成於該第一分區與該第二分區之間的該致動器之該外部上,且每一表面特徵經組態以在該第一分區與該第二分區之間提供部分機械隔離。該至少一個表面特徵可包括凹入至外部表面中之至少一個凹槽。該至少一個表面特徵可包括複數個凹槽;每一凹槽可包圍該套管;且每一凹槽可具有一凹槽形狀。The actuator may comprise a single piece of material mounted to an exterior of the catheter; the actuator electrodes may be located on an exterior of the actuator, and the actuator electrodes may be spatially separated from each other. In some implementations, the actuator includes a sleeve comprising: a first end; a second end; an inner wall extending from the first end to the second end and mechanically coupled to the the exterior of the conduit; the second end is closer to the orifice than the first end; the first section of the actuator is a first portion of the sleeve, and the second section of the actuator is the a second portion of the sleeve; and at least one surface feature is formed on the exterior of the actuator between the first subregion and the second subregion, and each surface feature is configured to be in the first subregion Partial mechanical isolation is provided from the second partition. The at least one surface feature may include at least one groove recessed into the exterior surface. The at least one surface feature can include a plurality of grooves; each groove can surround the sleeve; and each groove can have a groove shape.

該系統亦可包括位於該套管之該第一末端及該內壁上的一接地電極。該複數個凹槽中之一者位於該接地電極與該第一分區之間。在一些實施中,該複數個凹槽中之至少一者相較於至少另一凹槽具有一不同形狀。該套管之外壁的直徑在該第二末端處可比在該第一末端處更小。在一些實施中,每一致動器電極包圍相關聯分區。此外,在一些實施中,該第二致動信號之該頻譜中的一最小頻率大於該第一致動信號之該頻譜中的一最大頻率。該第二頻譜中之一最大頻率可大於該第一頻譜中之一最大頻率。The system can also include a ground electrode located on the first end and the inner wall of the sleeve. One of the plurality of grooves is located between the ground electrode and the first partition. In some implementations, at least one of the plurality of grooves has a different shape than at least one other groove. The outer wall of the sleeve may have a smaller diameter at the second end than at the first end. In some implementations, each actuator electrode surrounds an associated partition. Additionally, in some implementations, a minimum frequency in the spectrum of the second actuation signal is greater than a maximum frequency in the spectrum of the first actuation signal. A maximum frequency in the second spectrum may be greater than a maximum frequency in the first spectrum.

該控制器經組態以施加該第一致動信號及該第二致動信號可包括該控制器經組態以控制一電信號產生器以使得產生該第一致動信號及該第二致動信號且將其施加至各別第一分區及第二分區。該第一致動信號及該第二致動信號中之每一者可包括至少一個正弦波。The controller being configured to apply the first actuation signal and the second actuation signal may include the controller being configured to control an electrical signal generator such that the first actuation signal and the second actuation signal are generated The active signal is applied to the respective first partition and the second partition. Each of the first actuation signal and the second actuation signal may include at least one sine wave.

該系統亦可包括該電信號產生器。The system may also include the electrical signal generator.

該熔融目標材料可在處於一電漿狀態時發射極紫外線光。The molten target material can emit EUV light when in a plasma state.

該致動器之該第一分區可包括一第一致動器且第二致動器可不同於該第一致動器。該系統亦可包括與該導管之一內部機械連通的一隔膜;且該第二致動器可機械耦接至該隔膜。該系統可包括該第一致動器與該第二致動器之間的一運動傳送區塊。該第一致動器可包括致動元件之一堆疊。The first section of the actuator may include a first actuator and the second actuator may be different from the first actuator. The system can also include a diaphragm in mechanical communication with an interior of the conduit; and the second actuator can be mechanically coupled to the diaphragm. The system can include a motion transfer block between the first actuator and the second actuator. The first actuator may comprise a stack of actuating elements.

在另一態樣中,方法包括:將一導管之一孔口流體耦接至固持熔融目標材料之一儲集器;將壓力施加至該儲集器,使得該熔融目標材料在該導管中流動;將一第一致動信號施加至機械耦接至該導管之一致動器的一第一分區,該第一致動信號具有一第一頻譜;及將一第二致動信號施加至該致動器之一第二分區。該第二致動信號具有一第二頻譜,且該第二頻譜包括比該第一頻譜更高之頻率。In another aspect, a method includes: fluidly coupling an orifice of a conduit to a reservoir holding molten target material; applying pressure to the reservoir such that the molten target material flows in the conduit ; applying a first actuation signal to a first section of an actuator mechanically coupled to the catheter, the first actuation signal having a first frequency spectrum; and applying a second actuation signal to the actuation One of the drives is the second partition. The second actuation signal has a second frequency spectrum, and the second frequency spectrum includes higher frequencies than the first frequency spectrum.

實施可包括以下特徵中之一或多者。Implementations can include one or more of the following features.

可將一第三致動信號施加至該致動器之一第三分區,該第三致動信號具有一第三頻譜。A third actuation signal can be applied to a third subsection of the actuator, the third actuation signal having a third frequency spectrum.

在另一態樣中,系統包括:一導管,其包括經組態以流體耦接至一儲集器且發射熔融目標材料之一孔口;一單件式致動器,其機械耦接至該導管,該單件式致動器包括複數個單獨可控分區;及一控制器,其經組態以將一單獨致動信號施加至至少一第一分區及一第二分區中之每一者。In another aspect, a system includes: a conduit including an orifice configured to be fluidly coupled to a reservoir and emit molten target material; a one-piece actuator mechanically coupled to The catheter, the one-piece actuator comprising a plurality of individually controllable sections; and a controller configured to apply an individual actuation signal to each of at least a first section and a second section By.

在一些實施中,一凹槽形成於該第一分區與該第二分區之間的該單件式致動器之一外部表面中,且該凹槽經組態以部分地機械解耦該第一分區與該第二分區。In some implementations, a groove is formed in an exterior surface of the one-piece actuator between the first section and the second section, and the groove is configured to partially mechanically decouple the first section. the first partition and the second partition.

在另一態樣中,系統包括:一導管,其包括經組態以流體耦接至一儲集器且發射熔融目標材料之一孔口;一致動器,其機械耦接至該導管,該致動器包括複數個單獨可控分區,該複數個單獨可控分區包括至少一第一分區及一第二分區,該第二分區位於該第一分區與該孔口之間;且該第二分區小於該第一分區;及一控制器,其經組態以將一第一致動信號施加至該第一分區且將一第二致動信號施加至該第二分區。In another aspect, a system includes: a conduit including an orifice configured to be fluidly coupled to a reservoir and emit molten target material; an actuator mechanically coupled to the conduit, the The actuator includes a plurality of individually controllable sections, the plurality of individually controllable sections including at least a first section and a second section, the second section being located between the first section and the orifice; and the second a zone smaller than the first zone; and a controller configured to apply a first actuation signal to the first zone and apply a second actuation signal to the second zone.

該第二致動信號包括大於該第一致動信號中之所有頻率的至少一個頻率。The second actuation signal includes at least one frequency greater than all frequencies in the first actuation signal.

在另一態樣中,致動器包括:一致動器主體,其包括:一接地分區,其經組態以電連接至一參考電位;及複數個可控制分區。每一可控制分區經組態以接收一控制信號,且在操作使用時,該等可控制分區經組態以機械耦接至一導管以使得該等可控制分區之運動在該導管之一內部區中產生壓力波。In another aspect, the actuator includes: an actuator body including: a ground zone configured to be electrically connected to a reference potential; and a plurality of controllable zones. Each controllable zone is configured to receive a control signal, and in operative use, the controllable zones are configured to be mechanically coupled to a conduit such that movement of the controllable zones is within one of the conduits A pressure wave is generated in the area.

實施可包括以下特徵中之一或多者。該致動器主體可包括一單件材料;該接地分區及該複數個可控制分區為該單件材料之部分;且該單件材料可為複數個空間特徵;且該接地分區可藉由複數個空間特徵中之一者與該複數個可控制分區分離,且每一可控制分區可藉由該複數個空間特徵中之一者與一最接近的可控制分區分離。Implementations can include one or more of the following features. The actuator body may comprise a single piece of material; the grounded zone and the plurality of controllable zones are part of the single piece of material; and the single piece of material may be a plurality of spatial features; and the grounded zone may be controlled by a plurality of One of the spatial characteristics is separated from the plurality of controllable partitions, and each controllable partition is separated from a closest controllable partition by one of the plurality of spatial characteristics.

該等可控制分區中之至少一者可為並不直接接觸其他可控制分區或該地分區中之任一者的一單獨材料件。At least one of the controllable zones may be a separate piece of material that does not directly contact any of the other controllable zones or the ground zone.

該致動器主體可包括經組態以包圍該導管之一一實質上圓柱形側壁。The actuator body can include a substantially cylindrical sidewall configured to surround one of the conduits.

上文所描述之技術中的任一者之實施可包括:EUV光源、目標供應系統、方法、程序、控制器或作用於致動器或目標供應設備之控制系統、裝置或設備。一或多個實施之細節闡述於以下隨附圖式及描述中。其他特徵將自描述及圖式且自申請專利範圍而顯而易見。Implementations of any of the techniques described above may include: EUV light sources, target delivery systems, methods, programs, controllers, or control systems, devices, or devices that act on actuators or target delivery devices. The details of one or more implementations are set forth in the accompanying drawings and the description below. Other features will be apparent from the description and drawings and from the claims.

參考圖1,展示包括供應系統110之EUV光源100的方塊圖。供應系統110發射目標之串流121使得目標121p被遞送至真空腔室109中之電漿形成位置123。目標121p包括目標材料,其為在處於電漿狀態時發射EUV光197的任何材料。舉例而言,目標材料可包括水、錫、鋰及/或氙。電漿形成位置123接收光束106。光束106由光學源105產生且經由光學路徑107遞送至真空腔室109。光束106與目標121p中之目標材料之間的相互作用會產生發射EUV光197之電漿196。Referring to FIG. 1 , a block diagram of an EUV light source 100 including a supply system 110 is shown. Supply system 110 emits stream 121 of targets such that targets 121 p are delivered to plasma formation location 123 in vacuum chamber 109 . Target 121p includes a target material, which is any material that emits EUV light 197 when in a plasma state. For example, target materials may include water, tin, lithium, and/or xenon. Plasma formation location 123 receives light beam 106 . Light beam 106 is generated by optical source 105 and delivered to vacuum chamber 109 via optical path 107 . Interaction between light beam 106 and target material in target 121 p produces plasma 196 that emits EUV light 197 .

供應系統110包括界定孔口119之導管114。導管114藉由噴嘴安裝件或外殼117安裝至供應系統110。導管114之內部及孔口119流體耦接至在壓力P下固持目標材料的儲集器112。當壓力P超過真空腔室109中之壓力時,目標材料流動至導管114中且作為目標材料之射流或連續串流124而射出孔口119。目標材料之射流124分解成個別小滴,該等個別小滴聚結為到達電漿形成位置123的較大小滴之串流121。導管114耦接至由控制器190控制的致動器193。致動器193之運動經傳送至導管114以在導管114內部產生聲波。The supply system 110 includes a conduit 114 defining an orifice 119 . Conduit 114 is mounted to supply system 110 by a nozzle mount or housing 117 . The interior of conduit 114 and orifice 119 are fluidly coupled to reservoir 112 which holds the target material under pressure P. When the pressure P exceeds the pressure in the vacuum chamber 109 , the target material flows into the conduit 114 and exits the orifice 119 as a jet or continuous stream 124 of the target material. The jet 124 of the target material breaks up into individual droplets which coalesce into a stream 121 of larger droplets reaching the plasma formation site 123 . Conduit 114 is coupled to actuator 193 controlled by controller 190 . The motion of the actuator 193 is transmitted to the conduit 114 to generate sound waves inside the conduit 114 .

控制器190可包括例如電子處理模組、電子儲存器及/或產生控制信號之功能或信號產生器。在一些實施中,控制器190控制單獨的裝置(諸如,電壓或電流源)以產生施加至致動器192之控制信號。舉例而言,控制器190可控制電壓源以產生呈具有特定振幅、頻率及/或相位值之電壓及/或電流信號形式的控制信號。Controller 190 may include, for example, electronic processing modules, electronic storage, and/or functions or signal generators that generate control signals. In some implementations, the controller 190 controls a separate device, such as a voltage or current source, to generate the control signal applied to the actuator 192 . For example, controller 190 may control a voltage source to generate a control signal in the form of a voltage and/or current signal having a particular amplitude, frequency and/or phase value.

控制器190控制致動器193之運動之特性(例如,振幅及/或頻率),且因此亦控制導管114內部的聲波之特性。較大聚結小滴到達電漿形成位置123之速率藉由導管114內部之聲波之特性來判定。因此,藉由控制導管114之致動,控制器190亦經組態以控制串流121中之小滴之屬性。最終目標可以例如在40至300 kHz之間的頻率產生,且可以例如在每秒40至120公尺(m/s)之間或高達500 m/s的速度朝向電漿形成位置123行進。在目標之串流121中之兩個相鄰目標之間的空間分離可為例如在1至3公釐(mm)之間。50至300個初始小滴(亦稱為瑞立小滴(Rayleigh droplet))可聚結以形成單個更大目標。Controller 190 controls the characteristics (eg, amplitude and/or frequency) of the motion of actuator 193 , and thus also controls the characteristics of the acoustic waves inside conduit 114 . The rate at which larger coalesced droplets reach the plasma formation site 123 is determined by the properties of the acoustic waves inside the conduit 114 . Thus, by controlling the actuation of conduit 114 , controller 190 is also configured to control the properties of the droplets in stream 121 . The final target may be generated, eg, at a frequency between 40 and 300 kHz, and may travel towards the plasma formation location 123, eg, at a velocity between 40 and 120 meters per second (m/s), or as high as 500 m/s. The spatial separation between two adjacent objects in the stream of objects 121 may be, for example, between 1 and 3 millimeters (mm). From 50 to 300 initial droplets (also known as Rayleigh droplets) can coalesce to form a single larger target.

致動器193具有由控制器190單獨地控制之兩個或更多個分區。如下文所論述,具有兩個或更多個單獨可控分區改良致動器193及供應系統110之效能。The actuator 193 has two or more sections that are individually controlled by the controller 190 . As discussed below, having two or more individually controllable zones improves the performance of the actuator 193 and supply system 110 .

在圖1之實例中,致動器193包括第一分區194a及第二分區194b。第二分區194b在孔口119與第一分區194a之間。在圖1之實例中,第二分區194a相對接近孔口119且第一分區194a較遠離孔口119。每一分區194a及194b自控制器190接收各別控制信號192a及192b。In the example of FIG. 1, the actuator 193 includes a first section 194a and a second section 194b. The second section 194b is between the aperture 119 and the first section 194a. In the example of FIG. 1 , the second partition 194a is relatively close to the aperture 119 and the first partition 194a is further away from the aperture 119 . Each partition 194a and 194b receives a respective control signal 192a and 192b from the controller 190 .

控制信號192a及192b具有不同特性。舉例而言,控制信號192a及192b中之每一者可為具有頻率之不同頻帶的電壓信號。在一些實施中,控制信號192a包括具有在50千赫茲(kHz)與1百萬赫(MHz)之間的頻率的複數個正弦波電壓信號,且控制信號192b包括具有在1 MHz與20 MHz之間的頻率的複數個正弦波電壓信號。其他實施係可能的。舉例而言,每一控制信號192a及192b可為方波或三角波。控制信號192a及192b係週期性的,具有聚結目標到達電漿形成位置123的頻率。亦即,控制信號192a及192b具有週期性,其等於聚結目標到達電漿形成位置123之頻率。舉例而言,控制信號192a及192b中之每一者可為具有頻譜之電信號,該頻譜僅包括基礎頻率(目標到達位置12之頻率)及基礎頻率之諧波。控制器190可實施為多於一個單獨的控制器或可控制單獨功能或信號產生器。在此等實施中,信號192a及192b同步至相同時鐘以避免信號192a與192b之間的相位漂移。The control signals 192a and 192b have different characteristics. For example, each of the control signals 192a and 192b may be a voltage signal having different frequency bands. In some implementations, the control signal 192a includes a plurality of sinusoidal voltage signals having a frequency between 50 kilohertz (kHz) and 1 megahertz (MHz), and the control signal 192b includes a sinusoidal voltage signal having a frequency between 1 MHz and 20 MHz. A complex number of sinusoidal voltage signals with frequencies between. Other implementations are possible. For example, each control signal 192a and 192b can be a square wave or a triangle wave. The control signals 192a and 192b are periodic with a frequency at which the coalescence target reaches the plasma formation location 123 . That is, the control signals 192a and 192b have a periodicity equal to the frequency at which coalescence targets arrive at the plasma formation location 123 . For example, each of control signals 192a and 192b may be an electrical signal having a frequency spectrum that includes only the fundamental frequency (the frequency at which the target arrives at position 12) and harmonics of the fundamental frequency. Controller 190 may be implemented as more than one single controller or may control separate functions or signal generators. In such implementations, the signals 192a and 192b are synchronized to the same clock to avoid phase drift between the signals 192a and 192b.

使用兩個或更多個可控制分區(在此實例中,分區194a及194b)改良供應系統110之效能及可用性。舉例而言,相較於用單個控制信號驅動致動器193,用不同控制信號驅動致動器193之各種分區增加可驅動致動器193之頻寬。在致動器193缺乏兩個或更多個可個別控制分區之方法中,用具有相對較大頻寬(例如,50 kHz至20 MHz)之單個控制信號驅動致動器193。單個控制信號可經放大,然而,放大器具有有限增益頻寬特性,其中放大器之增益隨著將放大的信號之頻寬增加而減小。因此,充分地放大單個控制信號中之所有頻率相對具有挑戰性。另一方面,控制信號192a及192b中之每一者可藉由單獨的放大器放大。因此,控制信號192a及192b之更大放大係可能的。Using two or more controllable partitions (in this example, partitions 194a and 194b ) improves the performance and availability of provisioning system 110 . For example, driving various partitions of actuator 193 with different control signals increases the bandwidth over which actuator 193 can be driven compared to driving actuator 193 with a single control signal. In methods where the actuator 193 lacks two or more individually controllable partitions, the actuator 193 is driven with a single control signal having a relatively large bandwidth (eg, 50 kHz to 20 MHz). A single control signal can be amplified, however, amplifiers have a finite gain bandwidth characteristic, where the gain of the amplifier decreases as the bandwidth of the signal to be amplified increases. Therefore, it is relatively challenging to adequately amplify all frequencies in a single control signal. On the other hand, each of the control signals 192a and 192b may be amplified by a separate amplifier. Thus, greater amplification of control signals 192a and 192b is possible.

此外,為了增加EUV光197所產生之量,壓力P增加,串流121中之小滴彼此隔開更遠,且射流124之速度藉由增加驅動致動器193之頻寬而增加。舉例而言,275巴之壓力P,控制信號之頻寬為50 kHz至5 MHz。然而,在1400巴之壓力P下,控制信號之頻寬為100 kHz至20 MHz。在供應系統110中,針對1400巴之壓力P的相對較大頻寬在分區194a與194b之間拆分,而非用單個控制信號施加至導管114。用各別控制信號192a及192b驅動每一分區194a及194b允許致動器193以更寬頻率範圍高效且有效地被驅動,且使用較簡單電子器件。Furthermore, to increase the amount of EUV light 197 produced, the pressure P is increased, the droplets in the stream 121 are spaced farther apart from each other, and the velocity of the jet 124 is increased by increasing the bandwidth of the drive actuator 193 . For example, for a pressure P of 275 bar, the bandwidth of the control signal is 50 kHz to 5 MHz. However, at a pressure P of 1400 bar, the bandwidth of the control signal is 100 kHz to 20 MHz. In supply system 110, the relatively large bandwidth for a pressure P of 1400 bar is split between partitions 194a and 194b, rather than being applied to conduit 114 with a single control signal. Driving each partition 194a and 194b with a separate control signal 192a and 192b allows the actuator 193 to be efficiently and effectively driven over a wider frequency range and using simpler electronics.

另外,雖然分區194a及194b可機械耦接,但分區194a及194b在空間上不同。此配置允許某些頻帶被遞送至致動器193之特定部分,且允許對串流122之形成的更大控制且亦允許更有效地使用致動器193。Additionally, while partitions 194a and 194b may be mechanically coupled, partitions 194a and 194b are spatially distinct. This configuration allows certain frequency bands to be delivered to specific portions of the actuator 193 and allows for greater control over the formation of the stream 122 and also allows for more efficient use of the actuator 193 .

此外,在一些實施中,分區194a及194b為不同形狀及/或大小。舉例而言,致動器193可為陶瓷材料,諸如鋯鈦酸鉛(PZT)。當以高頻(例如,10 MHz)或更高驅動此類材料時,獲得PZT上之相同電荷所需的電流增加。若壓電驅動電子器件無法提供彼電流,則較大電流要求可能變成問題。驅動PZT所需的電流藉由I = C*dV/dt給出,且dV/dt隨頻率增加。因此,驅動PZT所需的電流隨著頻率增加。PZT之電容量取決於其厚度及面積。以法拉為單位之PZT之電容(C)藉由C = (1500 ×自由空間電容率×寬度×長度)/厚度給出。Furthermore, in some implementations, the partitions 194a and 194b are different shapes and/or sizes. For example, the actuator 193 may be a ceramic material such as lead zirconate titanate (PZT). When driving such materials at high frequency (eg, 10 MHz) or higher, the current required to obtain the same charge on the PZT increases. Larger current requirements can become a problem if the piezoelectric drive electronics cannot provide that current. The current required to drive a PZT is given by I = C*dV/dt, and dV/dt increases with frequency. Therefore, the current required to drive the PZT increases with frequency. The capacitance of PZT depends on its thickness and area. The capacitance (C) of a PZT in farads is given by C = (1500 x free space permittivity x width x length)/thickness.

另一方面,在低頻率下,需要較小電流。藉由使用單獨分區194a及194b,致動器193可經組態以使得分區194a及194b為不同大小以解決藉由致動器193材料之頻率特性呈現的挑戰。舉例而言,分區194a可為相對較大的PZT,且分區194b可為相對較小的PZT。較大分區194a係以相對較低的頻率驅動且在導管114內部之目標材料中產生大體積波動。On the other hand, at low frequencies, less current is required. By using separate partitions 194a and 194b, actuator 193 can be configured such that partitions 194a and 194b are different sizes to address challenges presented by the frequency characteristics of the actuator 193 material. For example, partition 194a can be a relatively large PZT, and partition 194b can be a relatively small PZT. Larger partitions 194a are driven at relatively low frequencies and create large volume fluctuations in the target material inside conduit 114 .

因此,藉由將分區194b製造為相對較小的PZT,PZT之電容較小,且以高頻驅動PZT所需的電流量減少。以此方式,致動器193可以多種頻率有效且高效地驅動。舉例而言,以與分區194a不同之頻率驅動分區194b可導致控制信號192a中之頻率處的兩倍致動量(由於相對容易地放大低頻信號之能力)及控制信號192b中之頻率處的10倍致動量(由於電容引起之減小)。Therefore, by fabricating partition 194b as a relatively small PZT, the capacitance of the PZT is small and the amount of current required to drive the PZT at high frequencies is reduced. In this way, the actuator 193 can be effectively and efficiently driven at a variety of frequencies. For example, driving partition 194b at a different frequency than partition 194a can result in twice the amount of actuation at the frequency in control signal 192a (due to the ability to amplify low frequency signals relatively easily) and 10 times the amount at the frequency in control signal 192b Actuation amount (reduction due to capacitance).

圖1中所示的組態為一實例,且其他實施係可能的。舉例而言,導管114可為毛細管,諸如圖2、圖3及圖4中所示之毛細管214。在此等實施中,噴嘴外殼或安裝件117將毛細管附接至真空腔室109且將毛細管流體耦接至儲集器112。在此等實施中,導管114自噴嘴安裝件或外殼117延伸且不必容納於安裝件或外殼117內。在圖1中所示之實例中,導管實質上沿著X方向延伸。然而,在一些實施中,導管114具有更複雜路徑且在多於一個方向上延伸。圖展示具有更複雜路徑之導管514。The configuration shown in Figure 1 is an example, and other implementations are possible. For example, conduit 114 may be a capillary, such as capillary 214 shown in FIGS. 2 , 3 and 4 . In such implementations, a nozzle housing or mount 117 attaches the capillary to the vacuum chamber 109 and fluidly couples the capillary to the reservoir 112 . In such implementations, the conduit 114 extends from the nozzle mount or housing 117 and need not be received within the mount or housing 117 . In the example shown in FIG. 1 , the conduit extends substantially along the X direction. However, in some implementations, conduit 114 has a more complex path and extends in more than one direction. The figure shows catheter 514 with a more complex path.

圖2A為X-Z平面中之目標形成設備216之側截面方塊圖。圖2B為沿著圖2A之線2B'-2B'截取的Y-Z平面中之目標形成設備216的截面圖。目標形成設備216可用於EUV光源100 (圖1)中。目標形成設備216包括一毛細管214。毛細管214包括一側壁230,其沿著X方向自一第一末端231延伸至一第二末端232。側壁230為通常為圓柱形之三維物體。側壁230可由例如玻璃或石英製成。Figure 2A is a side cross-sectional block diagram of the target forming apparatus 216 in the X-Z plane. 2B is a cross-sectional view of the target forming apparatus 216 in the Y-Z plane taken along line 2B'-2B' of FIG. 2A. Target forming device 216 may be used in EUV light source 100 (FIG. 1). Target forming device 216 includes a capillary 214 . The capillary 214 includes a side wall 230 extending from a first end 231 to a second end 232 along the X direction. Sidewall 230 is a three-dimensional object that is generally cylindrical. Sidewall 230 may be made of, for example, glass or quartz.

側壁230包括一內表面233及一外表面239。內表面233界定在第一末端231處與一噴嘴235流體連通之一內部區238。噴嘴235沿著-X方向變窄以界定一孔口219。在操作使用時,內部區238流體耦接至目標材料之一儲集器(諸如,圖1之儲集器112),且熔融目標材料在內部區238中流動且在-X方向上穿過孔口219。The sidewall 230 includes an inner surface 233 and an outer surface 239 . The inner surface 233 defines an inner region 238 in fluid communication with a nozzle 235 at the first end 231 . The nozzle 235 narrows along the -X direction to define an orifice 219 . In operative use, the inner region 238 is fluidly coupled to a reservoir of target material, such as reservoir 112 of FIG. 1 , and the molten target material flows in the inner region 238 and through the holes in the -X direction Mouth 219.

外表面239機械耦接至一致動器總成293。外表面239可用例如一黏著劑(諸如,一苯并㗁 𠯤樹脂、含有苯并㗁 𠯤之一樹脂、一雙馬來醯亞胺樹脂、一氰酸酯樹脂或含有氰酸酯之一樹脂)、用機械緊固件,或藉由外表面239與致動器總成293之間的直接接觸(例如,一干涉配合)機械耦接至致動器總成293。The outer surface 239 is mechanically coupled to an actuator assembly 293 . The outer surface 239 can be used, for example, with an adhesive (such as a benzophenone resin, a resin containing benzophenone, a bismaleimide resin, a monocyanate resin, or a resin containing cyanate) , with mechanical fasteners, or mechanically coupled to the actuator assembly 293 by direct contact (eg, an interference fit) between the outer surface 239 and the actuator assembly 293 .

致動器總成293包括一致動主體291及電極295a、295b及295g。亦參考圖2B,致動主體291通常為圓柱形且包括一內壁285及一外表面286。內壁285界定包圍毛細管214之外表面239之一部分的一孔。The actuator assembly 293 includes an actuating body 291 and electrodes 295a, 295b and 295g. Referring also to FIG. 2B , the actuation body 291 is generally cylindrical and includes an inner wall 285 and an outer surface 286 . The inner wall 285 defines a bore surrounding a portion of the outer surface 239 of the capillary 214 .

致動主體291係由能夠使側壁230移動之材料製成。舉例而言,致動主體291可為回應於電壓之施加而改變形狀的一壓電陶瓷材料,諸如鋯鈦酸鉛(PZT)。致動主體291之運動藉由徑向收縮及擴展引起側壁230之對應位移。徑向收縮及擴展引起內部區238中之聲波或壓力波。The actuating body 291 is made of a material capable of moving the side wall 230 . For example, the actuation body 291 may be a piezoelectric ceramic material, such as lead zirconate titanate (PZT), that changes shape in response to the application of a voltage. Movement of the actuation body 291 causes a corresponding displacement of the sidewall 230 by radial contraction and expansion. The radial contraction and expansion cause acoustic or pressure waves in the inner region 238 .

致動主體291具有一第一分區294a、一第二分區294b及一接地分區294g。第一分區294a及第二分區294b為單獨可控分區。第一分區294a在第二分區294b與接地分區294g之間。第二分區294b為最接近孔口219之分區。第一分區294a、第二分區294b及接地分區294g之徑向厚度實質上相同。然而,相較於第一分區294a,第二分區294b沿著X方向延伸較短距離。因此,第二分區294b具有比第一分區294a小的材料(例如,PZT)體積。The actuating body 291 has a first partition 294a, a second partition 294b and a ground partition 294g. The first partition 294a and the second partition 294b are individually controllable partitions. The first partition 294a is between the second partition 294b and the ground partition 294g. The second section 294b is the section closest to the orifice 219 . The radial thicknesses of the first partition 294a, the second partition 294b and the ground partition 294g are substantially the same. However, the second section 294b extends a shorter distance along the X direction than the first section 294a. Accordingly, the second partition 294b has a smaller volume of material (eg, PZT) than the first partition 294a.

電極295g在外表面286之鄰近於接地分區294g的一部分上。電極295g亦沿著致動器主體291之邊緣284且沿著內壁285延行。在目標形成設備216之操作使用期間,電極295g電連接至地面或參考電壓。Electrode 295g is on a portion of outer surface 286 that is adjacent to ground partition 294g. Electrode 295g also runs along edge 284 of actuator body 291 and along inner wall 285 . During operational use of the target forming apparatus 216, the electrode 295g is electrically connected to ground or a reference voltage.

電極295a在外表面296之鄰近於第一分區294a的一部分上。電極295b在外表面296之鄰近於第二分區294b的一部分上。電極295a、295b、295g可塗佈於外表面296上,藉由機械緊固件附接至外表面296及/或藉由導電性黏著劑附接至外表面296。Electrode 295a is on a portion of outer surface 296 adjacent to first segment 294a. Electrode 295b is on a portion of outer surface 296 that is adjacent to second segment 294b. The electrodes 295a, 295b, 295g may be coated on the outer surface 296, attached to the outer surface 296 by mechanical fasteners and/or attached to the outer surface 296 by a conductive adhesive.

致動主體291包括外表面286上之空間特徵288a及288b。空間特徵288a提供電極295g與295a之間的分離,且空間特徵288b提供電極295a與295b之間的分離。致動主體291為在使用期間接合之單件材料或材料件的集合。因此,接地分區294g、第一分區294a及第二分區294b機械耦接。然而,空間特徵288a提供接地分區294g與第一分區294a之間的部分機械解耦或部分機械隔離,且空間特徵288b提供第一分區294a與第二分區294b之間的部分機械解耦或部分機械隔離。Actuation body 291 includes spatial features 288a and 288b on outer surface 286 . Spatial feature 288a provides separation between electrodes 295g and 295a, and spatial feature 288b provides separation between electrodes 295a and 295b. The actuation body 291 is a single piece or collection of material pieces that are joined during use. Therefore, the ground section 294g, the first section 294a, and the second section 294b are mechanically coupled. However, spatial feature 288a provides partial mechanical decoupling or partial mechanical isolation between ground partition 294g and first partition 294a, and spatial feature 288b provides partial mechanical decoupling or partial mechanical isolation between first partition 294a and second partition 294b. isolation.

在所示之實例中,空間特徵288a及288b為形成於外表面286上的凹口。凹口288a及288b具有半圓形截面且包圍外表面286。換言之,在圖2A之實例中,凹口288a及288b為圍繞致動主體291之凹入環。然而,空間特徵288a及288b可採取在相鄰分區之間提供部分機械隔離的任何形式。舉例而言,空間特徵288a及288b可為具有三角形、矩形、方形或不規則截面而非半圓形截面之凹口。此外,空間特徵288a及288b可自外表面296突出而非凹入至外表面296中。此外,空間特徵288a及299b可延伸小於致動主體291之整個圓周。在一些實施中(諸如,圖3中所示),空間特徵288a及288b不具有相同尺寸且不具有相同空間特性。In the example shown, spatial features 288a and 288b are indentations formed on outer surface 286 . Notches 288 a and 288 b have a semicircular cross-section and surround outer surface 286 . In other words, in the example of FIG. 2A , notches 288 a and 288 b are recessed rings surrounding actuation body 291 . However, spatial features 288a and 288b may take any form that provides partial mechanical isolation between adjacent partitions. For example, spatial features 288a and 288b may be indentations having triangular, rectangular, square, or irregular cross-sections rather than semi-circular cross-sections. Additionally, spatial features 288a and 288b may protrude from outer surface 296 rather than be recessed into outer surface 296 . Additionally, spatial features 288a and 299b may extend less than the entire circumference of actuation body 291 . In some implementations, such as shown in FIG. 3 , spatial features 288a and 288b do not have the same size and do not have the same spatial characteristics.

在操作使用時,控制器190 (圖1)將第一控制信號192a提供至第一電極295a,使得第一分區294a根據第一控制信號192a移動。舉例而言,第一控制信號192a可包括具有在50 KHz與1 MHz之間的頻率之正弦波電壓信號,且第一控制信號192a之施加引起第一分區294a以此等頻率振動。控制器190將第二控制信號192b提供至第二電極295b,使得第二分區294b根據第二控制信號192b移動。舉例而言,第二控制信號192b可包括具有在1 MHz與20 MHz之間的頻率之正弦波電壓信號,且第二控制信號192b之施加引起第二分區294b以此等頻率振動。In operative use, the controller 190 (FIG. 1) provides a first control signal 192a to the first electrode 295a, causing the first segment 294a to move in accordance with the first control signal 192a. For example, the first control signal 192a may comprise a sinusoidal voltage signal having a frequency between 50 KHz and 1 MHz, and application of the first control signal 192a causes the first partition 294a to vibrate at these frequencies. The controller 190 provides the second control signal 192b to the second electrode 295b, so that the second partition 294b moves according to the second control signal 192b. For example, the second control signal 192b may include a sinusoidal voltage signal having a frequency between 1 MHz and 20 MHz, and application of the second control signal 192b causes the second partition 294b to vibrate at these frequencies.

因為第一分區294a與第二分區294b不完全機械隔離,故施加至第一分區294a之一些頻率傳播至第二分區294b,且反之亦然。然而,空間特徵288b減少此類串擾,使得第一分區294a主要歸因於第一控制信號192a之施加而振動且第二分區294b主要歸因於第二控制信號192b之施加而振動。因此,目標形成設備216包括兩個單獨可控分區(分區294a及294b),且施加至每一分區之控制信號之特性可變化以使得致動器主體291之運動更加精細可控。分區294a及294b之振動在內部區238中之目標材料中產生對應壓力波或聲波來以適於施加之頻率及大小促進小滴形成。Because the first partition 294a is not completely mechanically isolated from the second partition 294b, some frequencies applied to the first partition 294a propagate to the second partition 294b, and vice versa. However, the spatial features 288b reduce such crosstalk such that the first partition 294a vibrates primarily due to the application of the first control signal 192a and the second partition 294b vibrates primarily due to the application of the second control signal 192b. Thus, the target forming apparatus 216 includes two separately controllable sections (sections 294a and 294b), and the characteristics of the control signal applied to each section can be varied to make the movement of the actuator body 291 more finely controllable. Vibration of partitions 294a and 294b generates corresponding pressure or acoustic waves in the target material in inner region 238 to promote droplet formation at a frequency and size appropriate to the application.

圖3為X-Z平面中之目標形成設備316之側截面方塊圖。目標形成設備316可用於EUV光源100中以產生串流122 (圖1)。目標形成設備316包括毛細管214及致動器總成393。致動器總成393包括致動器主體391及接地分區394g、第一分區394a及第二分區394b。第一分區394a在接地分區394g與第二分區394b之間。致動器主體391包括外表面386及內壁385。致動器主體391亦包括外表面386上的空間特徵388a及388b。Figure 3 is a side sectional block diagram of the target forming apparatus 316 in the X-Z plane. Target forming device 316 may be used in EUV light source 100 to generate stream 122 (FIG. 1). Target forming device 316 includes capillary 214 and actuator assembly 393 . The actuator assembly 393 includes an actuator body 391 and a ground section 394g, a first section 394a, and a second section 394b. The first partition 394a is between the ground partition 394g and the second partition 394b. The actuator body 391 includes an outer surface 386 and an inner wall 385 . Actuator body 391 also includes spatial features 388 a and 388 b on outer surface 386 .

除了空間特徵388a及388b不為相同大小及形狀以外,致動器總成393類似於致動器總成293。空間特徵388a為外表面386中之凹口。空間特徵388a具有半圓形截面且包圍致動器主體391。空間特徵388b亦為外表面386中之凹口,但空間特徵388b相較於空間特徵388a更進一步延伸至外表面386中,且具有不同的截面形狀。空間特徵388b具有不對稱弧形之截面,其具有第一側381a及第二側381b。第一側381a及第二側381a為形成界定空間特徵388b之較大弧形的曲線或弧。Actuator assembly 393 is similar to actuator assembly 293 except that spatial features 388a and 388b are not the same size and shape. Spatial features 388a are indentations in outer surface 386 . Spatial feature 388a has a semicircular cross-section and surrounds actuator body 391 . Spatial feature 388b is also a recess in outer surface 386, but spatial feature 388b extends further into outer surface 386 than spatial feature 388a and has a different cross-sectional shape. The spatial feature 388b has an asymmetrically arcuate cross section with a first side 381a and a second side 381b. The first side 381a and the second side 381a are curves or arcs that form a larger arc that defines the spatial feature 388b.

第一側381a比第二側381b自內壁385延伸得更遠。因此,第一分區394a具有比第二分區394b更厚的徑向尺寸。第二分區394b在X方向上具有更小範圍,且因此相較於第一分區394b具有更小體積。因為空間特徵388b更深地延伸至外表面386中,故第一分區394a及第二分區394b由致動器主體291之相對較薄部分連接。相較於空間特徵288b (圖2A)及空間特徵388a,空間特徵388b在相鄰分區之間提供更多機械分離。因此,儘管第一分區394a與第二分區394b實體連接,但空間特徵388b提供額外機械隔離及機械分離,使得第一分區394a與第二分區394b比第一分區294a與第二分區294b更機械分離。The first side 381a extends further from the inner wall 385 than the second side 381b. Accordingly, the first section 394a has a thicker radial dimension than the second section 394b. The second partition 394b has a smaller extent in the X direction, and thus has a smaller volume than the first partition 394b. Because spatial feature 388b extends deeper into outer surface 386 , first section 394a and second section 394b are connected by a relatively thinner portion of actuator body 291 . Spatial feature 388b provides more mechanical separation between adjacent partitions than spatial feature 288b (FIG. 2A) and spatial feature 388a. Thus, although the first section 394a is physically connected to the second section 394b, the spatial feature 388b provides additional mechanical isolation and mechanical separation such that the first section 394a is more mechanically separated from the second section 394b than the first section 294a is from the second section 294b. .

在操作使用時,接地電極395g (其在外表面386之鄰近於接地分區394g之一部分上)、邊緣384及內壁385電連接至地面或參考電位。電極395a在外表面386之鄰近於第一分區394a的一部分上。電極395b在外表面386之鄰近於第二分區394b的一部分上。電極395a及395b自控制器190 (圖1)分別接收控制信號191a及192b。第二分區394b之相對較小體積允許第二分區394b以更高頻率(例如,1至20 MHz)高效地驅動。In operative use, the ground electrode 395g (which is on a portion of the outer surface 386 adjacent to the ground partition 394g), the edge 384 and the inner wall 385 are electrically connected to ground or a reference potential. Electrode 395a is on a portion of outer surface 386 that is adjacent to first segment 394a. Electrode 395b is on a portion of outer surface 386 that is adjacent to second segment 394b. Electrodes 395a and 395b receive control signals 191a and 192b, respectively, from controller 190 (FIG. 1). The relatively small size of the second partition 394b allows the second partition 394b to be efficiently driven at higher frequencies (eg, 1 to 20 MHz).

致動器總成293及393之其他實施係可能的。舉例而言,致動器總成292及/或392可包括多於兩個單獨可控的分區。舉例而言,致動器主體291及/或391可包括與自控制器190接收控制信號之電極相關聯的三個分區、四個分區或多於四個分區。換言之,致動器總成293及/或393可經組態以用三個、四個或更多個單獨頻帶進行控制。Other implementations of actuator assemblies 293 and 393 are possible. For example, actuator assemblies 292 and/or 392 may include more than two individually controllable sections. For example, actuator bodies 291 and/or 391 may include three partitions, four partitions, or more than four partitions associated with electrodes receiving control signals from controller 190 . In other words, actuator assemblies 293 and/or 393 may be configured to be controlled with three, four or more separate frequency bands.

致動器總成293及393包括作為單件材料之各別致動器主體291及391。然而,在其他實施中,致動器總成包括複數個離散或不同致動器主體。圖4、圖5及圖7展示此等致動器總成之實例。Actuator assemblies 293 and 393 include respective actuator bodies 291 and 391 as a single piece of material. However, in other implementations, the actuator assembly includes a plurality of discrete or distinct actuator bodies. Figures 4, 5 and 7 show examples of such actuator assemblies.

圖4為X-Z平面中之目標形成設備416之側截面方塊圖。目標形成設備416可用於EUV光源100中以產生串流122 (圖1)。Figure 4 is a side cross-sectional block diagram of the target forming apparatus 416 in the X-Z plane. Target forming device 416 may be used in EUV light source 100 to generate stream 122 (FIG. 1).

目標形成設備416包括毛細管214及致動器總成493。致動器總成493包括接地分區494g、第一分區494a及第二分區494b。第一分區494a在接地分區494g與第二分區494b之間。接地分區494g、第一分區494a及第二分區494b中之每一者為致動材料之離散主體。舉例而言,此等分區中之每一者可為包圍毛細管214之外壁239且機械耦接至毛細管214之外壁239的PZT材料之環。接地分區494g、第一分區494a及第二分區494b沿著側壁230定位以使得其不直接彼此接觸。Target forming device 416 includes capillary 214 and actuator assembly 493 . The actuator assembly 493 includes a ground section 494g, a first section 494a, and a second section 494b. The first partition 494a is between the ground partition 494g and the second partition 494b. Each of the ground section 494g, first section 494a, and second section 494b is a discrete body of actuation material. For example, each of these partitions can be a ring of PZT material surrounding and mechanically coupled to the outer wall 239 of the capillary 214 . Ground section 494g, first section 494a, and second section 494b are positioned along sidewall 230 such that they do not directly contact each other.

在操作使用時,在接地分區494g上且沿著側壁230之外表面239延行之接地電極495g電連接至地面或參考電位。電極495a在第一分區494a上。電極495b在第二分區494b上。電極495a及495b自控制器190 (圖1)分別接收控制信號191a及191b。在圖4中所示之實例中,第二分區494b具有比第一分區494a更小的體積。第二分區494b之相對較小體積允許第二分區494b以更高頻率(例如,1至20 MHz)高效地驅動。In operative use, a ground electrode 495g on the ground section 494g and running along the outer surface 239 of the sidewall 230 is electrically connected to ground or a reference potential. Electrode 495a is on first segment 494a. Electrode 495b is on second segment 494b. Electrodes 495a and 495b receive control signals 191a and 191b, respectively, from controller 190 (FIG. 1). In the example shown in FIG. 4, the second partition 494b has a smaller volume than the first partition 494a. The relatively small size of the second partition 494b allows the second partition 494b to be efficiently driven at higher frequencies (eg, 1 to 20 MHz).

其他實施係可能的。舉例而言,目標形成設備416可在單件材料上實施有接地分區494g及第一分區494a且藉由諸如空間特徵388a之空間特徵部分地機械隔離。在此等實施中,第二分區494b為單獨的材料件且不直接觸摸第一分區494a或接地分區494g。此外,儘管目標形成設備416展示為具有自控制器190接收控制信號之兩個分區(第一分區494a及第二分區494b),但目標形成設備416可實施有經組態以自控制器190 (或另一控制器)接收控制信號之額外分區。Other implementations are possible. For example, target forming apparatus 416 may be implemented with ground partition 494g and first partition 494a on a single piece of material and partially mechanically isolated by a spatial feature such as spatial feature 388a. In such implementations, the second section 494b is a separate piece of material and does not directly touch the first section 494a or the ground section 494g. Furthermore, although object forming apparatus 416 is shown as having two partitions (first partition 494a and second partition 494b) receiving control signals from controller 190, object forming apparatus 416 may implement a configuration configured to receive control signals from controller 190 ( or another controller) to receive control signals for additional partitions.

圖5為X-Z平面中之目標形成設備516之側截面方塊圖。目標形成設備516可用於EUV光源100中以產生串流122 (圖1)。目標形成設備516包括固持於安裝總成或外殼511中之致動器總成593及導管514。外殼511固持致動器總成593及導管514且可用於將目標形成設備516安裝至諸如圖1之腔室109的真空腔室。Figure 5 is a side cross-sectional block diagram of a target forming apparatus 516 in the X-Z plane. Target forming device 516 may be used in EUV light source 100 to generate stream 122 (FIG. 1). Target forming apparatus 516 includes an actuator assembly 593 and conduit 514 held in a mounting assembly or housing 511 . Housing 511 holds actuator assembly 593 and conduit 514 and may be used to mount target forming apparatus 516 to a vacuum chamber such as chamber 109 of FIG. 1 .

導管514包括經組態以流體耦接至諸如儲集器112 (圖1)的儲集器之內部區538。內部區538可藉由鑽孔穿過外殼511或以其他方式形成於外殼511中的通道(未展示)流體耦接至儲集器。導管514具有實質上T形狀,其包括在Z方向上延伸之區514a (且可在Y-Z平面中延伸)及在X方向上延伸之區514b。區514b朝向目標材料可通過的孔口519變窄。區514a與隔膜512流體接觸。隔膜512為可撓性且可移動的,且隔膜512之運動在內部區538中產生壓力波。隔膜512可為外殼511之部分,或隔膜512可為附接至外殼511之單獨的元件。外殼511及隔膜512可由例如鉬、鉭或鎢製成。Conduit 514 includes an interior region 538 configured to be fluidly coupled to a reservoir, such as reservoir 112 ( FIG. 1 ). The inner region 538 may be fluidly coupled to the reservoir by a passage (not shown) drilled through the housing 511 or otherwise formed in the housing 511 . Conduit 514 has a substantially T-shape comprising a region 514a extending in the Z direction (and may extend in the Y-Z plane) and a region 514b extending in the X direction. The region 514b narrows towards an aperture 519 through which the target material can pass. Region 514a is in fluid contact with membrane 512 . Diaphragm 512 is flexible and movable, and movement of diaphragm 512 generates pressure waves in interior region 538 . Membrane 512 may be part of housing 511 , or membrane 512 may be a separate element attached to housing 511 . The housing 511 and the diaphragm 512 can be made of molybdenum, tantalum or tungsten, for example.

致動器總成593包括第一分區594a及第二分區594b。第一分區594a第二分區594b以對角線陰影展示。第一分區594a及第二分區594b由諸如PZT之致動材料製成。第一分區594a及第二分區594b為離散分區且不直接彼此觸摸。第一分區594a及第二分區594b為三維物體且可在Y-Z平面中具有例如圓形、矩形或方形形狀。第一分區594a及第二分區594b可為連續物體且未必包括開口、孔或可用於圍繞另一物體定位分區594a或分區594b之其他特徵。第一分區594a及第二分區594b在Y-Z平面中可具有不同形狀。在圖5中所示之實例中,第二分區594b具有比第一分區594a更小之空間體積。The actuator assembly 593 includes a first section 594a and a second section 594b. The first partition 594a and the second partition 594b are shown diagonally hatched. The first segment 594a and the second segment 594b are made of an actuation material such as PZT. The first partition 594a and the second partition 594b are discrete partitions and do not directly touch each other. The first partition 594a and the second partition 594b are three-dimensional objects and may have, for example, a circular, rectangular or square shape in the Y-Z plane. The first and second partitions 594a, 594b may be continuous objects and may not necessarily include openings, holes, or other features that may be used to position either the partition 594a or the partition 594b around another object. The first partition 594a and the second partition 594b may have different shapes in the Y-Z plane. In the example shown in FIG. 5, the second partition 594b has a smaller spatial volume than the first partition 594a.

致動器總成593包括經組態以定位及固持第一分區594a的定位機構571。定位機構571可包括例如將第一分區594a固持在原位同時亦允許第一分區594a改變形狀的預拉緊楔形件及/或間隔件。The actuator assembly 593 includes a positioning mechanism 571 configured to position and retain the first section 594a. The positioning mechanism 571 may include, for example, a pre-tensioned wedge and/or a spacer that holds the first section 594a in place while also allowing the first section 594a to change shape.

致動器總成593亦包括在第二分區594b與第一分區594a之間的區塊572。區塊572具有面572a及頂端572b。頂端572b在-X方向上遠離面572a延伸且在Z方向上比面572a更窄。面572a與第一分區594a接觸。第二分區594b安裝在頂端572b上。頂端572b與隔膜512接觸。頂端572b成形為將來自第一分區594a之運動的振動導引至隔膜512。The actuator assembly 593 also includes a block 572 between the second section 594b and the first section 594a. Block 572 has a face 572a and a top 572b. Tip 572b extends away from face 572a in the -X direction and is narrower in Z direction than face 572a. Face 572a is in contact with first segment 594a. A second partition 594b is mounted on top 572b. Top end 572b is in contact with diaphragm 512 . Top end 572b is shaped to direct vibrations from the motion of first section 594a to diaphragm 512 .

在操作使用時,來自控制器190 (圖1)之控制信號191a及191b分別提供至第一分區494a及第二分區494b以控制此等分區之運動。第一分區594a及第二分區594b之振動自頂端572b經傳送至隔膜512。因此,隔膜512基於第一分區594a及第二分區594b振動之頻率而振動。隔膜512之振動引起內部區538中之對應聲波。In operational use, control signals 191a and 191b from controller 190 (FIG. 1) are provided to first and second partitions 494a, 494b, respectively, to control the movement of these partitions. The vibrations of the first section 594a and the second section 594b are transmitted from the top 572b to the diaphragm 512 . Thus, the diaphragm 512 vibrates based on the frequency at which the first segment 594a and the second segment 594b vibrate. Vibration of diaphragm 512 causes corresponding sound waves in interior region 538 .

致動器總成593可包括額外元件。舉例而言,致動器總成593可包括每一分區594a及594b上之一或多個電極。致動器總成593可包括多於一個可控制分區,且因此可包括比圖5中所示更多的PZT。Actuator assembly 593 may include additional components. For example, actuator assembly 593 may include one or more electrodes on each section 594a and 594b. The actuator assembly 593 may include more than one controllable zone, and thus may include more PZTs than shown in FIG. 5 .

圖6為致動器總成693之側截面方塊圖,其為其中第一分區594a實施為PZT圓盤之堆疊694的致動器總成593之實例實施。堆疊694可包括10、50、100或更多個薄的PZT圓盤。圓盤可在Y-Z平面中具有圓形截面。堆疊694可在X方向上具有約2公釐(mm)至10 mm之範圍。堆疊694可由沿著X方向由定位機構571提供之壓縮力固持在一起。6 is a side cross-sectional block diagram of an actuator assembly 693, which is an example implementation of the actuator assembly 593 in which the first partition 594a is implemented as a stack 694 of PZT disks. Stack 694 may include 10, 50, 100 or more thin PZT disks. The disc may have a circular cross-section in the Y-Z plane. Stack 694 may have a range in the X direction of about 2 millimeters (mm) to 10 mm. Stack 694 may be held together by a compressive force provided by positioning mechanism 571 along the X direction.

圖7為X-Z平面中之目標形成設備716之側截面方塊圖。目標形成設備716可用於EUV光源100中以產生串流122 (圖1)。目標形成設備716包括界定內部區738及孔口719之導管714。導管714通常為圓錐形且在-X方向上朝向孔口719變窄。目標形成設備716亦包括各種安裝元件或外殼711。安裝元件或外殼711用於容納目標形成設備716之組件且將目標形成設備516安裝至諸如真空腔室109之真空腔室。Figure 7 is a side cross-sectional block diagram of a target forming apparatus 716 in the X-Z plane. Target forming device 716 may be used in EUV light source 100 to generate stream 122 (FIG. 1). Target forming apparatus 716 includes conduit 714 defining an interior region 738 and an orifice 719 . Conduit 714 is generally conical and narrows toward orifice 719 in the -X direction. Target forming device 716 also includes various mounting elements or housings 711 . Mounting element or housing 711 is used to house the components of target forming apparatus 716 and to mount target forming apparatus 516 to a vacuum chamber such as vacuum chamber 109 .

目標形成設備716亦包括分區794a及794b,該等分區中之每一者為安裝至導管714之外表面733的PZT材料之環。分區794a具有比分區794b更大的半徑及更大的縱向厚度。因此,分區794b具有比分區794b更小的空間體積。在分區794a及分區794b中,分區794b更接近於孔口719。Target forming apparatus 716 also includes partitions 794 a and 794 b , each of which is a ring of PZT material mounted to outer surface 733 of conduit 714 . Section 794a has a larger radius and greater longitudinal thickness than section 794b. Accordingly, partition 794b has a smaller spatial volume than partition 794b. Of the partitions 794 a and 794 b , the partition 794 b is closer to the aperture 719 .

在操作使用時,來自控制器190 (圖1)之控制信號191a及191b分別提供至引線777及778。引線777及778可為電線或電纜。引線777電連接至第一分區794a上之電極(未展示),且引線778電連接至第二分區794b上之電極(未展示)。控制信號191a及191b分別控制分區794a及794b之運動。第一分區794a及第二分區794b之振動經傳送至內部空間738且在內部區538中產生聲波。In operational use, control signals 191a and 191b from controller 190 (FIG. 1) are provided to leads 777 and 778, respectively. Leads 777 and 778 may be wires or cables. Leads 777 are electrically connected to electrodes (not shown) on the first segment 794a, and leads 778 are electrically connected to electrodes (not shown) on the second segment 794b. Control signals 191a and 191b control the movement of partitions 794a and 794b, respectively. The vibrations of the first partition 794 a and the second partition 794 b are transmitted to the interior space 738 and generate sound waves in the interior region 538 .

上文所論述之目標形成設備216、316、416、516及716中之任一者可用於EUV光源中。參考圖8,展示LPP EUV光源800之實施。上文所論述之噴嘴總成中之任一者可作為供應系統825的一部分用於光源800中。Any of the target forming apparatuses 216, 316, 416, 516, and 716 discussed above may be used in an EUV light source. Referring to Figure 8, an implementation of an LPP EUV light source 800 is shown. Any of the nozzle assemblies discussed above may be used in light source 800 as part of supply system 825 .

藉由運用經放大光束810輻照電漿形成位置805處之目標混合物814而形成LPP EUV光源800,該經放大光束810沿著朝向目標混合物814之光束路徑行進。關於圖1所論述之目標材料及關於圖1所論述之串流121中之目標可為或包括目標混合物814。電漿形成位置805係在真空腔室830之內部807內。當經放大光束810照在目標混合物814上時,目標混合物814內之目標材料轉換成具有在EUV範圍內之發射譜線之元素的電漿狀態。所產生電漿具有取決於目標混合物814內之目標材料之組成物的某些特性。此等特性可包括由電漿產生之EUV光之波長及自電漿釋放之碎屑的類型及量。LPP EUV light source 800 is formed by irradiating target mixture 814 at plasma formation location 805 with an amplified beam 810 that travels along a beam path toward target mixture 814 . The target material discussed with respect to FIG. 1 and the target in stream 121 discussed with respect to FIG. 1 may be or include a target mixture 814 . The plasma formation location 805 is within the interior 807 of the vacuum chamber 830 . When the amplified light beam 810 is shone on the target mixture 814, the target material within the target mixture 814 is converted into a plasmonic state of an element having an emission line in the EUV range. The generated plasma has certain characteristics depending on the composition of the target material within the target mixture 814 . Such characteristics may include the wavelength of EUV light generated by the plasma and the type and amount of debris released from the plasma.

光源800亦包括供應系統825,該供應系統825遞送、控制及導向呈液滴、液流、固體粒子或叢集、液滴內所含有之固體粒子或液流內所含有之固體粒子之形式的目標混合物814。目標混合物814包括目標材料,諸如水、錫、鋰、氙,或在轉換成電漿狀態時具有在EUV範圍內之發射譜線的任何材料。舉例而言,元素錫可用作純錫(Sn);用作錫化合物,例如SnBr 4、SnBr 2、SnH 4;用作錫合金,例如錫-鎵合金、錫-銦合金、錫-銦-鎵合金或此等合金之任何組合。目標混合物814亦可包括諸如非目標粒子之雜質。因此,在不存在雜質之情況下,目標混合物814僅由目標材料製成。目標混合物814由供應系統825遞送至腔室830之內部807中且遞送至電漿形成位置805。 The light source 800 also includes a supply system 825 that delivers, controls, and directs a target in the form of a droplet, a stream, a solid particle or cluster, a solid particle contained within a droplet, or a solid particle contained within a stream Mixture 814. Target mixture 814 includes a target material such as water, tin, lithium, xenon, or any material that has an emission line in the EUV range when converted to a plasma state. For example, elemental tin can be used as pure tin (Sn); as tin compounds such as SnBr 4 , SnBr 2 , SnH 4 ; as tin alloys such as tin-gallium alloys, tin-indium alloys, tin-indium- Gallium alloys or any combination of these alloys. Target mixture 814 may also include impurities such as non-target particles. Thus, target mixture 814 is made only of the target material in the absence of impurities. Target mixture 814 is delivered by supply system 825 into interior 807 of chamber 830 and to plasma formation location 805 .

光源800包括驅動雷射系統815,其歸因於雷射系統815之一或多個增益介質內之粒子數反轉而產生經放大光束810。光源800包括在雷射系統815與電漿形成位置805之間的光束遞送系統,該光束遞送系統包括光束傳送系統820及聚焦總成822。光束傳送系統820自雷射系統815接收經放大光束810,且視需要轉向及調整經放大光束810且將經放大光束810輸出至聚焦總成822。聚焦總成822接收經放大光束810且將光束810聚焦至電漿形成位置805。Light source 800 includes a driven laser system 815 that produces an amplified beam 810 due to population inversion within one or more gain media of laser system 815 . Light source 800 includes a beam delivery system including beam delivery system 820 and focusing assembly 822 between laser system 815 and plasma formation location 805 . Beam delivery system 820 receives amplified beam 810 from laser system 815 , and steers and adjusts amplified beam 810 as necessary and outputs amplified beam 810 to focusing assembly 822 . Focusing assembly 822 receives amplified beam 810 and focuses beam 810 to plasma formation location 805 .

在一些實施中,雷射系統815可包括用於提供一或多個主脈衝且在一些狀況下提供一或多個預脈衝之一或多個光學放大器、雷射及/或燈。每一光學放大器包括能夠以高增益光學地放大所要波長之增益介質、激發源及內部光學器件。光學放大器可具有或可不具有形成雷射空腔之雷射鏡面或其他回饋裝置。因此,雷射系統815即使在不存在雷射空腔的情況下歸因於雷射放大器之增益介質中之粒子數反轉亦會產生經放大光束810。此外,雷射系統815可在存在雷射空腔以將足夠回饋提供至雷射系統815的情況下產生作為相干雷射光束之經放大光束810。術語「經放大光束」涵蓋如下中之一或多者:來自雷射系統815之僅僅經放大但未必為相干雷射振盪的光,及來自雷射系統815之經放大且亦為相干雷射振盪的光。In some implementations, laser system 815 may include one or more optical amplifiers, lasers, and/or lamps for providing one or more main pulses and, in some cases, one or more pre-pulses. Each optical amplifier includes a gain medium capable of optically amplifying a desired wavelength with high gain, an excitation source, and internal optics. The optical amplifier may or may not have a laser mirror or other feedback device forming the laser cavity. Thus, laser system 815 produces amplified beam 810 even in the absence of a laser cavity due to population inversion in the gain medium of the laser amplifier. Furthermore, the laser system 815 can produce the amplified beam 810 as a coherent laser beam in the presence of a laser cavity to provide sufficient feedback to the laser system 815 . The term "amplified light beam" encompasses one or more of: light from laser system 815 that is only amplified, but not necessarily coherent laser oscillations, and light from laser system 815 that is also amplified and also coherent laser oscillations of light.

雷射系統815中之光學放大器可包括填充氣體(包括CO 2)作為增益介質,且可以大於或等於800倍之增益放大處於約9100 nm與約11000 nm之間的波長,且尤其處於約10600 nm的光。供用於雷射系統815中之合適放大器及雷射可包括脈衝式雷射裝置,例如脈衝式氣體放電CO 2雷射裝置,該脈衝式氣體放電CO 2雷射裝置例如用以相對較高功率(例如10 kW或更高)及高脈衝重複率(例如40 kHz或更大)操作的DC或RF激發產生處於約9300 nm或約10600 nm之輻射。脈衝重複率可為例如50 kHz。雷射系統815中之光學放大器亦可包括可在較高功率下操作雷射系統815時使用的冷卻系統,諸如水。 The optical amplifier in laser system 815 may include a gas fill (including CO2 ) as a gain medium and may amplify wavelengths between about 9100 nm and about 11000 nm, and especially at about 10600 nm, with a gain of greater than or equal to 800 times of light. Suitable amplifiers and lasers for use in laser system 815 may include pulsed laser devices, such as pulsed gas discharge CO2 laser devices, such as those used in relatively high power ( DC or RF excitation operated at eg 10 kW or higher) and high pulse repetition rate (eg 40 kHz or greater) produces radiation at about 9300 nm or about 10600 nm. The pulse repetition rate may be, for example, 50 kHz. The optical amplifiers in the laser system 815 may also include a cooling system, such as water, that may be used when operating the laser system 815 at higher powers.

光源800包括收集器鏡面835,其具有孔隙840以允許經放大光束810穿過且到達電漿形成位置805。收集器鏡面835可為例如在電漿形成位置805處具有主焦點且在中間位置845處具有次級焦點(亦稱為中間焦點)的橢球形鏡面,其中可自光源800輸出EUV光且可將該EUV光輸入至例如積體電路微影工具(未展示)。光源800亦可包括開端式中空圓錐形護罩850 (例如,氣體錐體),該圓錐形護罩850自收集器鏡面835朝向電漿形成位置805漸狹以縮減進入聚焦總成822及/或光束傳送系統820的電漿產生之碎屑之量,同時允許經放大光束810到達電漿形成位置805。出於此目的,可將氣流提供於護罩中,該氣流經導向電漿形成位置805。Light source 800 includes collector mirror 835 with aperture 840 to allow amplified light beam 810 to pass through and to plasma formation location 805 . Collector mirror 835 can be, for example, an ellipsoidal mirror with a primary focus at plasma formation location 805 and a secondary focus (also referred to as intermediate focus) at intermediate location 845, where EUV light can be output from light source 800 and can be The EUV light is input to, for example, an integrated circuit lithography tool (not shown). The light source 800 may also include an open-ended hollow conical shield 850 (e.g., a gas cone) that tapers from the collector mirror 835 toward the plasma formation location 805 to reduce entry into the focusing assembly 822 and/or The amount of plasma generated debris of the beam delivery system 820 while allowing the amplified beam 810 to reach the plasma formation location 805 . For this purpose, a gas flow may be provided in the shroud which is directed to the plasma formation location 805 .

光源800亦可包括主控控制器855,該主控控制器855連接至小滴位置偵測回饋系統856、雷射控制系統857及光束控制系統858。光源800可包括一或多個目標或小滴成像器860,其提供指示小滴例如相對於電漿形成位置805之定位的輸出且將此輸出提供至小滴位置偵測回饋系統856,該小滴位置偵測回饋系統856可例如計算小滴定位及軌跡,可在逐小滴基礎上或平均地自該小滴定位及軌跡計算出小滴定位誤差。小滴定位偵測回饋系統856因此將小滴定位誤差作為一輸入提供至主控控制器855。因此,主控控制器855可將例如一雷射定位、方向及時序校正信號提供至可用以例如控制雷射時序電路之雷射控制系統857及/或提供至光束控制系統858,該光束控制系統858用以控制經放大光束定位及光束傳送系統820之塑形以改變光束聚焦光點在腔室830內之位置及/或聚焦度。The light source 800 may also include a master controller 855 connected to a droplet position detection feedback system 856 , a laser control system 857 and a beam control system 858 . The light source 800 may include one or more target or droplet imagers 860 that provide an output indicative of the location of the droplet, for example, relative to the plasma formation location 805 and provide this output to the droplet position detection feedback system 856, which The drop position detection feedback system 856 can, for example, calculate a droplet location and trajectory from which a droplet location error can be calculated on a droplet-by-droplet basis or averaged. The droplet location detection feedback system 856 thus provides the droplet location error as an input to the master controller 855 . Thus, master controller 855 may provide, for example, a laser position, direction, and timing correction signal to laser control system 857, which may be used, for example, to control laser timing circuits and/or to beam control system 858, which beam control system 858 is used to control the positioning of the amplified beam and the shaping of the beam delivery system 820 to change the position and/or focus of the focused spot of the beam within the chamber 830 .

供應系統825包括一目標材料遞送控制系統826,其可操作以回應於例如來自主控控制器855之信號而修改如由一目標材料供應設備827釋放的小滴之釋放點,以校正到達所要電漿形成位置805處之小滴中的誤差。目標材料供應設備827可為或包括上文所論述之目標形成設備中之任一者及/或致動器中之任一者。The supply system 825 includes a target material delivery control system 826 operable to modify the release point of droplets as released by a target material supply device 827 in response to signals, for example, from the master controller 855, to correct for reaching the desired delivery point. Error in the droplet at the slurry formation location 805. The target material supply device 827 may be or include any of the target forming devices and/or any of the actuators discussed above.

另外,光源800可包括光源偵測器865及870,其量測一或多個EUV光參數,包括但不限於脈衝能量、依據波長而變化的能量分佈、特定波長帶內之能量、特定波長帶外部之能量,及EUV強度之角度分佈及/或平均功率。光源偵測器865產生一回饋信號以供主控控制器855使用。回饋信號可例如指示為有效及高效EUV光產生而在適當的地點及時間恰當地攔截小滴之雷射脈衝的諸如時序及焦距之參數中的誤差。In addition, light source 800 may include light source detectors 865 and 870 that measure one or more EUV light parameters, including but not limited to pulse energy, energy distribution as a function of wavelength, energy in a specific wavelength band, specific wavelength band External energy, and angular distribution and/or average power of EUV intensity. The light source detector 865 generates a feedback signal for the master controller 855 to use. Feedback signals may, for example, indicate errors in parameters such as timing and focal length of laser pulses that properly intercept the droplet at the proper place and time for effective and efficient EUV light generation.

光源800亦可包括一導引雷射875,其可用於將光源800之各個區段對準或輔助將經放大光束810轉向至電漿形成位置805。結合導引雷射875,光源800包括一度量衡系統824,該度量衡系統824被置放於聚焦總成822內以對來自導引雷射875之光之一部分及經放大光束810進行取樣。在其他實施中,度量衡系統824被置放於光束傳送系統820內。度量衡系統824可包括對光之子集進行取樣或重新引導之一光學元件,此光學元件由可耐受導引雷射光束及經放大光束810之功率的任何材料製成。一光束分析系統由度量衡系統824及主控控制器855形成,此係因為主控控制器855分析自導引雷射875取樣之光且使用此資訊以經由光束控制系統858調整聚焦總成822內之組件。The light source 800 may also include a guide laser 875 that may be used to align various segments of the light source 800 or to assist in steering the amplified beam 810 to the plasma formation location 805 . In conjunction with the pilot laser 875 , the light source 800 includes a metrology system 824 placed within the focusing assembly 822 to sample a portion of the light from the pilot laser 875 and the amplified beam 810 . In other implementations, the metrology system 824 is placed within the beam delivery system 820 . The metrology system 824 may include an optical element made of any material that can withstand the power of the steered laser beam and the amplified beam 810 to sample or redirect a subset of light. A beam analysis system is formed by the metrology system 824 and the master controller 855 because the master controller 855 analyzes the light sampled by the homing laser 875 and uses this information to adjust the focus assembly 822 via the beam control system 858 components.

因此,概言之,光源800產生經放大光束810,該經放大光束810沿著光束路徑經導向以輻照電漿形成位置805處之目標混合物814以將混合物814內的目標材料轉換成發射在EUV範圍內之光的電漿。經放大光束810在基於雷射系統815之設計及屬性而決定之一特定波長(其亦稱為一驅動雷射波長)下操作。另外,經放大光束810在目標材料將足夠回饋提供回至雷射系統815中以產生相干雷射光時或在驅動雷射系統815包括合適光學回饋以形成雷射空腔的情況下可為雷射光束。Thus, in summary, the light source 800 produces an amplified beam 810 that is directed along a beam path to irradiate the target mixture 814 at the plasma formation location 805 to convert the target material within the mixture 814 to be emitted at Plasma of light in the EUV range. The amplified beam 810 operates at a specific wavelength (also referred to as a drive laser wavelength) determined based on the design and properties of the laser system 815 . Additionally, the amplified beam 810 can be laser when the target material provides sufficient feedback back into the laser system 815 to produce coherent laser light or where the driving laser system 815 includes suitable optical feedback to form a laser cavity beam.

可使用以下條項進一步描述實施例: 1. 一種系統,其包含: 一導管,其包含經組態以流體耦接至一儲集器且發射熔融目標材料之一孔口; 一致動器,其包含至少一第一分區及位於該第一分區與該孔口之間的一第二分區,其中該第一分區及該第二分區之運動經傳送至該導管之一內部;及 一控制器,其經組態以將一第一致動信號施加至該第一分區且將一第二致動信號施加至該第二分區,其中該第二致動信號具有比該第一致動信號更高之一頻率。 2. 如條項1之系統,其中該第二分區小於該第一分區。 3. 如條項1之系統,其進一步包含複數個致動器電極;且其中至少一個致動器電極與該第一分區及該第二分區中之每一者相關聯;該第一致動信號及該第二致動信號中之每一者包含具有一頻譜之一電信號;且為了將一特定致動信號施加至該致動器之一特定分區,該控制器經組態以將一電信號施加至與該特定分區相關聯之該致動器電極。 4. 如條項3之系統,其中至少一個電信號之該頻譜包含多於一個頻率。 5. 如條項3之系統,其中該致動器包含安裝至該導管之一外部的一單件材料;該致動器電極位於該致動器之一外部上,且該等致動器電極在空間上彼此分離。 6. 如條項5之系統,其中該致動器包含一套管,該套管包含:一第一末端;一第二末端;一內壁,其自該第一末端延伸至該第二末端且機械耦接至該導管之該外部; 該第二末端比該第一末端更接近該孔口; 該致動器之該第一分區為該套管之一第一部分,且該致動器之該第二分區為該套管之一第二部分;且 至少一個表面特徵形成於該第一分區與該第二分區之間的該致動器之該外部上,其中每一表面特徵經組態以在該第一分區與該第二分區之間提供部分機械隔離。 7. 如條項6之系統,其中該至少一個表面特徵包含凹入至外表面中之至少一個凹槽。 8. 如條項7之系統,其中該至少一個表面特徵包含複數個凹槽;每一凹槽包圍該套管;且每一凹槽具有一凹槽形狀。 9. 如條項8之系統,其進一步包含位於該套管之該第一末端及該內壁上的一接地電極;且其中 該複數個凹槽中之一者位於該接地電極與該第一分區之間。 10.    如條項9之系統,其中該複數個凹槽中之至少一者相較於至少另一凹槽具有一不同形狀。 11.    如條項10之系統,其中該套管之外壁的直徑在該第二末端處比在該第一末端處更小。 12.    如條項3之系統,其中每一致動器電極包圍相關聯分區。 13.    如條項3之系統,其中該第二致動信號之該頻譜中的一最小頻率大於該第一致動信號之該頻譜中的一最大頻率。 14.    如條項1之系統,其中該控制器經組態以施加該第一致動信號及該第二致動信號包含該控制器經組態以控制一電信號產生器以使得產生該第一致動信號及該第二致動信號且將其施加至各別第一分區及第二分區。 15.    如條項14之系統,其進一步包含該電信號產生器。 16.    如條項14之系統,其中該第一致動信號及該第二致動信號中之每一者包含至少一個正弦波。 17.    如條項1之系統,其中該熔融目標材料在處於一電漿狀態時發射極紫外線光。 18.    如條項1之系統,其中該致動器之該第一分區包含一第一致動器且第二致動器包含不同於該第一致動器之一第二致動器。 19.    如條項18之系統,其中該系統進一步包含與該導管之一內部機械連通的一隔膜;且 該第二致動器機械耦接至該隔膜。 20.    如條項19之系統,其進一步包含該第一致動器與該第二致動器之間的一運動傳送區塊。 21.    如條項20之系統,其中該第一致動器包含致動元件之一堆疊。 22.    如條項3之系統,其中第二頻譜中之一最大頻率大於第一頻譜中之一最大頻率。 23.    一種方法,其包含: 將一導管之一孔口流體耦接至固持熔融目標材料之一儲集器; 將壓力施加至該儲集器,使得該熔融目標材料在該導管中流動; 將一第一致動信號施加至機械耦接至該導管之一致動器的一第一分區,該第一致動信號具有一第一頻譜;及 將一第二致動信號施加至該致動器之一第二分區,其中 該第二致動信號具有一第二頻譜,且 該第二頻譜包含比該第一頻譜更高之頻率。 24.    如條項23之方法,其進一步包含: 將一第三致動信號施加至該致動器之一第三分區,其中該第三致動信號具有一第三頻譜。 25.    一種系統,其包含: 一導管,其包含經組態以流體耦接至一儲集器且發射熔融目標材料之一孔口; 一單件式致動器,其機械耦接至該導管,該單件式致動器包含複數個單獨可控分區;及 一控制器,其經組態以將一單獨致動信號施加至至少一第一分區及一第二分區中之每一者。 26.    如條項25之系統,其中一凹槽形成於該第一分區與該第二分區之間的該單件式致動器之一外表面中,且該凹槽經組態以部分地機械解耦該第一分區與該第二分區。 27.    一種系統,其包含: 一導管,其包含經組態以流體耦接至一儲集器且發射熔融目標材料之一孔口; 一致動器,其機械耦接至該導管,該致動器包含複數個單獨可控分區,其中 該複數個單獨可控分區包含至少一第一分區及一第二分區, 該第二分區位於該第一分區與該孔口之間;且 該第二分區小於該第一分區;及 一控制器,其經組態以將一第一致動信號施加至該第一分區且將一第二致動信號施加至該第二分區。 28.    如條項27之系統,其中該第二致動信號包含大於該第一致動信號中之所有頻率的至少一個頻率。 29.    一種致動器,其包含: 一致動器主體,其包含: 一接地分區,其經組態以電連接至一參考電位;及 複數個可控制分區,其中每一可控制分區經組態以接收一控制信號,且其中在操作使用時,該等可控制分區經組態以機械耦接至一導管以使得該等可控制分區之運動在該導管之一內部區中產生壓力波。 30.    如條項29之致動器,其中該致動器主體包含一單件材料;該接地分區及該複數個可控制分區為該單件材料之部分;且該單件材料包含複數個空間特徵;且 該接地分區藉由複數個空間特徵中之一者與該複數個可控制分區分離,且每一可控制分區藉由該複數個空間特徵中之一者與一最接近的可控制分區分離。 31.    如條項29之致動器,其中該等可控制分區中之至少一者為並不直接接觸其他可控制分區或該地分區中之任一者的一單獨材料件。 32.    如條項29之致動器,其中該致動器主體包含經組態以包圍該導管之一實質上圓柱形側壁。 Embodiments can be further described using the following terms: 1. A system comprising: a conduit comprising an orifice configured to be fluidly coupled to a reservoir and emit molten target material; an actuator comprising at least a first section and a second section located between the first section and the orifice, wherein motion of the first section and the second section is transmitted to an interior of the conduit; and a controller configured to apply a first actuation signal to the first partition and a second actuation signal to the second partition, wherein the second actuation signal has a greater frequency than the first actuation signal One of the higher frequencies of the moving signal. 2. The system of clause 1, wherein the second partition is smaller than the first partition. 3. The system of clause 1, further comprising a plurality of actuator electrodes; and wherein at least one actuator electrode is associated with each of the first partition and the second partition; the first actuating each of the signal and the second actuation signal comprises an electrical signal having a frequency spectrum; and in order to apply a specific actuation signal to a specific partition of the actuator, the controller is configured to apply a An electrical signal is applied to the actuator electrode associated with the particular partition. 4. The system of clause 3, wherein the spectrum of at least one electrical signal comprises more than one frequency. 5. The system of clause 3, wherein the actuator comprises a single piece of material mounted to an exterior of the catheter; the actuator electrodes are located on an exterior of the actuator, and the actuator electrodes spatially separated from each other. 6. The system of clause 5, wherein the actuator comprises a sleeve comprising: a first end; a second end; an inner wall extending from the first end to the second end and mechanically coupled to the exterior of the catheter; the second end is closer to the orifice than the first end; the first section of the actuator is a first portion of the bushing, and the second section of the actuator is a second portion of the bushing; and At least one surface feature is formed on the exterior of the actuator between the first subregion and the second subregion, wherein each surface feature is configured to provide a portion between the first subregion and the second subregion Mechanical isolation. 7. The system of clause 6, wherein the at least one surface feature comprises at least one groove recessed into the outer surface. 8. The system of clause 7, wherein the at least one surface feature comprises a plurality of grooves; each groove surrounds the sleeve; and each groove has a groove shape. 9. The system of clause 8, further comprising a ground electrode located on the first end and the inner wall of the sleeve; and wherein One of the plurality of grooves is located between the ground electrode and the first partition. 10. The system of clause 9, wherein at least one of the plurality of grooves has a different shape compared to at least one other groove. 11. The system of clause 10, wherein the diameter of the outer wall of the sleeve is smaller at the second end than at the first end. 12. The system of clause 3, wherein each actuator electrode surrounds an associated partition. 13. The system of clause 3, wherein a minimum frequency in the spectrum of the second actuation signal is greater than a maximum frequency in the spectrum of the first actuation signal. 14. The system of clause 1, wherein the controller is configured to apply the first actuation signal and the second actuation signal comprises the controller being configured to control an electrical signal generator such that the first actuation signal is generated An actuation signal and the second actuation signal are applied to respective first and second partitions. 15. The system of clause 14, further comprising the electrical signal generator. 16. The system of clause 14, wherein each of the first actuation signal and the second actuation signal comprises at least one sine wave. 17. The system of clause 1, wherein the molten target material emits extreme ultraviolet light when in a plasma state. 18. The system of clause 1, wherein the first partition of the actuators includes a first actuator and the second actuator includes a second actuator different from the first actuator. 19. The system of clause 18, wherein the system further comprises a septum in mechanical communication with an interior of the catheter; and The second actuator is mechanically coupled to the diaphragm. 20. The system of clause 19, further comprising a motion transfer block between the first actuator and the second actuator. 21. The system of clause 20, wherein the first actuator comprises a stack of actuation elements. 22. The system of clause 3, wherein a maximum frequency in the second spectrum is greater than a maximum frequency in the first spectrum. 23. A method comprising: fluidly coupling an orifice of a conduit to a reservoir holding molten target material; applying pressure to the reservoir causing the molten target material to flow in the conduit; applying a first actuation signal to a first section of an actuator mechanically coupled to the catheter, the first actuation signal having a first frequency spectrum; and applying a second actuation signal to a second section of the actuator, wherein the second actuation signal has a second frequency spectrum, and The second spectrum contains higher frequencies than the first spectrum. 24. The method of clause 23, further comprising: A third actuation signal is applied to a third subsection of the actuator, wherein the third actuation signal has a third frequency spectrum. 25. A system comprising: a conduit comprising an orifice configured to be fluidly coupled to a reservoir and emit molten target material; a one-piece actuator mechanically coupled to the catheter, the one-piece actuator comprising a plurality of individually controllable segments; and A controller configured to apply a separate actuation signal to each of at least a first partition and a second partition. 26. The system of clause 25, wherein a groove is formed in an outer surface of the one-piece actuator between the first subregion and the second subregion, and the groove is configured to partially The first partition and the second partition are mechanically decoupled. 27. A system comprising: a conduit comprising an orifice configured to be fluidly coupled to a reservoir and emit molten target material; an actuator mechanically coupled to the catheter, the actuator comprising a plurality of individually controllable segments, wherein The plurality of individually controllable partitions includes at least a first partition and a second partition, the second subregion is located between the first subregion and the orifice; and the second subregion is smaller than the first subregion; and A controller configured to apply a first actuation signal to the first partition and a second actuation signal to the second partition. 28. The system of clause 27, wherein the second actuation signal includes at least one frequency that is greater than all frequencies in the first actuation signal. 29. An actuator comprising: An actuator body comprising: a ground partition configured to be electrically connected to a reference potential; and a plurality of controllable zones, wherein each controllable zone is configured to receive a control signal, and wherein in operative use, the controllable zones are configured to be mechanically coupled to a catheter such that the controllable zones The movement of the pipe generates a pressure wave in an inner region of the catheter. 30. The actuator of clause 29, wherein the actuator body comprises a single piece of material; the grounded partition and the plurality of controllable zones are part of the single piece of material; and the single piece of material comprises a plurality of voids characteristics; and The grounded zone is separated from the plurality of controllable zones by one of the plurality of spatial features, and each controllable zone is separated from a closest controllable zone by one of the plurality of spatial features. 31. The actuator of clause 29, wherein at least one of the controllable zones is a separate piece of material that does not directly contact any of the other controllable zones or the zone. 32. The actuator of clause 29, wherein the actuator body includes a substantially cylindrical sidewall configured to surround the conduit.

上述實施及其他實施在以下申請專利範圍之範疇內。The above-mentioned implementation and other implementations are within the scope of the following patent applications.

100:EUV光源 105:光學源 106:光束 107:光學路徑 109:真空腔室 110:供應系統 112:儲集器 114:導管 117:安裝件或外殼 119:孔口 121:串流 121p:目標 123:電漿形成位置 124:射流 190::控制器 192a控制信號 192b:控制信號 193:致動器 194a:第一分區 194b:第二分區 196:電漿 197:EUV光 214:毛細管 216:目標形成設備 219:孔口 230:側壁 231:第一末端 232:第二末端 233:內表面 235:噴嘴 238:內部區 239:外表面 284:邊緣 285:內壁 286:外表面 288a:空間特徵/凹口 288b:空間特徵/凹口 291:致動主體 293:致動器總成 294a:第一分區 294b:第二分區 294g:接地分區 295a:電極 295b:電極 295g:電極 296:外表面 316:目標形成設備 381a:第一側 381b:第二側 384:邊緣 385:內壁 386:外表面 388a:空間特徵 388b:空間特徵 391:致動器主體 393:致動器總成 394a:第一分區 394b:第二分區 394g:接地分區 395a:電極 395b:電極 395g:接地電極 416:目標形成設備 493:致動器總成 494a:第一分區 494b:第二分區 494g:接地分區 495a:電極 495b:電極 495g:接地電極 511:外殼 512:隔膜 514:導管 514a:區 514b:區 516:目標形成設備 519:孔口 538:內部區 571:定位機構 572:區塊 572a:面 572b:頂端 593:致動器總成 594a:第一分區 594b:第二分區 693:致動器總成 694:堆疊 711:安裝元件或外殼 714:導管 716:目標形成設備 719:孔口 733:外表面 738:內部區 777:引線 778:引線 794a:分區 794b:分區 800:光源 805:電漿形成位置 807:內部 810:經放大光束 814:目標混合物 815:雷射系統 820:光束傳送系統 822:聚焦總成 824:度量衡系統 825:供應系統 826:目標材料遞送控制系統 827:目標材料供應設備 830:真空腔室 835:收集器鏡面 840:孔隙 845:中間位置 850:開端式中空圓錐形護罩 855:主控控制器 856:小滴位置偵測回饋系統 857:雷射控制系統 858:光束控制系統 860:目標或小滴成像器 865:光源偵測器 870:光源偵測器 875:導引雷射 2B'-2B':線 X:方向 Z:方向 P:壓力 100:EUV light source 105: Optical source 106: Beam 107: Optical path 109: vacuum chamber 110: Supply system 112: Reservoir 114: Conduit 117: Mounting piece or shell 119: Orifice 121: Streaming 121p: target 123: Plasma formation position 124:Jet 190::controller 192a control signal 192b: Control signal 193: Actuator 194a: First Division 194b: Second partition 196: Plasma 197:EUV light 214: Capillary 216: Target Formation Equipment 219: Orifice 230: side wall 231: first end 232: second end 233: inner surface 235: Nozzle 238: Internal area 239: Outer surface 284: edge 285: inner wall 286: Outer surface 288a: Spatial features/notches 288b: Spatial features/notches 291:Actuate the main body 293: Actuator assembly 294a: First Partition 294b: Second partition 294g: Ground partition 295a: electrode 295b: electrode 295g: electrode 296: Outer surface 316: Target Formation Equipment 381a: First side 381b: second side 384:Edge 385: inner wall 386: Outer surface 388a: Spatial features 388b: Spatial features 391:Actuator body 393: Actuator assembly 394a: First Partition 394b: Second partition 394g: Ground partition 395a: electrode 395b: electrode 395g: Ground electrode 416: Target Formation Equipment 493: Actuator assembly 494a: First Partition 494b: Second partition 494g: Ground partition 495a: electrode 495b: electrode 495g: Ground electrode 511: shell 512: Diaphragm 514: Conduit 514a: area 514b: area 516: target forming equipment 519: orifice 538: Internal area 571: Positioning mechanism 572: block 572a: face 572b: top 593: Actuator assembly 594a: First Partition 594b: Second partition 693: Actuator assembly 694:Stack 711: Mounting elements or enclosures 714: Conduit 716: Target Formation Equipment 719: orifice 733: outer surface 738: Inner area 777:lead 778:lead 794a: partition 794b: partition 800: light source 805: Plasma formation position 807: internal 810: amplified light beam 814: target mixture 815:Laser system 820: beam delivery system 822:Focus assembly 824: Weights and measures system 825:Supply system 826: Target material delivery control system 827: Target material supply equipment 830: vacuum chamber 835: collector mirror 840: porosity 845: middle position 850: Open-ended hollow conical shield 855: Master controller 856: Droplet position detection feedback system 857:Laser control system 858: Beam control system 860: target or droplet imager 865:Light source detector 870:Light source detector 875:Guide Laser 2B'-2B': line X: direction Z: Direction P: pressure

圖1為EUV光源之實例的方塊圖。 圖2A為X-Z平面中之目標形成設備之實例的側截面方塊圖。 圖2B為沿著線2B'-2B'截取的Y-Z平面中之圖2A之目標形成設備的截面圖。 圖3為X-Z平面中之目標形成設備之另一實例的側截面方塊圖。 圖4為X-Z平面中之目標形成設備之另一實例的側截面方塊圖。 圖5為X-Z平面中之目標形成設備之另一實例的側截面方塊圖。 圖6為致動器總成之實例之側截面方塊圖。 圖7為X-Z平面中之目標形成設備之另一實例的側截面方塊圖。 圖8為EUV光源之實例的方塊圖。 FIG. 1 is a block diagram of an example of an EUV light source. Figure 2A is a side cross-sectional block diagram of an example of a target forming apparatus in the X-Z plane. 2B is a cross-sectional view of the target forming apparatus of FIG. 2A in the Y-Z plane taken along line 2B'-2B'. Fig. 3 is a side sectional block diagram of another example of an object forming apparatus in the X-Z plane. Fig. 4 is a side sectional block diagram of another example of an object forming apparatus in the X-Z plane. Fig. 5 is a side sectional block diagram of another example of an object forming apparatus in the X-Z plane. Figure 6 is a side sectional block diagram of an example of an actuator assembly. Fig. 7 is a side sectional block diagram of another example of an object forming apparatus in the X-Z plane. 8 is a block diagram of an example of an EUV light source.

192a:控制信號 192a: Control signal

192b:控制信號 192b: Control signal

214:毛細管 214: Capillary

219:孔口 219: Orifice

235:噴嘴 235: Nozzle

239:外表面 239: Outer surface

416:目標形成設備 416: Target Formation Equipment

493:致動器總成 493: Actuator assembly

494a:第一分區 494a: First Partition

494b:第二分區 494b: Second partition

494g:接地分區 494g: Ground partition

495a:電極 495a: electrode

495b:電極 495b: electrode

495g:接地電極 495g: Ground electrode

Claims (32)

一種系統,其包含: 一導管,其包含經組態以流體耦接至一儲集器且發射熔融目標材料之一孔口; 一致動器,其包含至少一第一分區及位於該第一分區與該孔口之間的一第二分區,其中該第一分區及該第二分區之運動經傳送至該導管之一內部;及 一控制器,其經組態以將一第一致動信號施加至該第一分區且將一第二致動信號施加至該第二分區,其中該第二致動信號具有比該第一致動信號高之一頻率。 A system comprising: a conduit comprising an orifice configured to be fluidly coupled to a reservoir and emit molten target material; an actuator comprising at least a first section and a second section located between the first section and the orifice, wherein motion of the first section and the second section is transmitted to an interior of the conduit; and a controller configured to apply a first actuation signal to the first partition and a second actuation signal to the second partition, wherein the second actuation signal has a greater frequency than the first actuation signal The frequency of the moving signal is one high. 如請求項1之系統,其中該第二分區小於該第一分區。The system of claim 1, wherein the second partition is smaller than the first partition. 如請求項1之系統,其進一步包含複數個致動器電極;且其中至少一個致動器電極與該第一分區及該第二分區中之每一者相關聯;該第一致動信號及該第二致動信號中之每一者包含具有一頻譜之一電信號;且為了將一特定致動信號施加至該致動器之一特定分區,該控制器經組態以將一電信號施加至與該特定分區相關聯之該致動器電極。The system of claim 1, further comprising a plurality of actuator electrodes; and wherein at least one actuator electrode is associated with each of the first partition and the second partition; the first actuation signal and Each of the second actuation signals includes an electrical signal having a frequency spectrum; and in order to apply a specific actuation signal to a specific partition of the actuator, the controller is configured to apply an electrical signal Applied to the actuator electrode associated with the particular partition. 如請求項3之系統,其中至少一個電信號之該頻譜包含多於一個頻率。The system of claim 3, wherein the frequency spectrum of at least one electrical signal includes more than one frequency. 如請求項3之系統,其中該致動器包含安裝至該導管之一外部的一單件材料;該致動器電極位於該致動器之一外部上,且該等致動器電極在空間上彼此分離。The system of claim 3, wherein the actuator comprises a single piece of material mounted to an exterior of the catheter; the actuator electrodes are located on an exterior of the actuator, and the actuator electrodes are spaced separated from each other. 如請求項5之系統,其中該致動器包含一套管,該套管包含:一第一末端;一第二末端;一內壁,其自該第一末端延伸至該第二末端且機械耦接至該導管之該外部; 該第二末端比該第一末端更接近該孔口; 該致動器之該第一分區為該套管之一第一部分,且該致動器之該第二分區為該套管之一第二部分;且 至少一個表面特徵形成於該第一分區與該第二分區之間的該致動器之該外部上,其中每一表面特徵經組態以在該第一分區與該第二分區之間提供部分機械隔離。 The system of claim 5, wherein the actuator comprises a sleeve comprising: a first end; a second end; an inner wall extending from the first end to the second end and mechanically coupled to the exterior of the conduit; the second end is closer to the orifice than the first end; the first section of the actuator is a first portion of the bushing, and the second section of the actuator is a second portion of the bushing; and At least one surface feature is formed on the exterior of the actuator between the first subregion and the second subregion, wherein each surface feature is configured to provide a portion between the first subregion and the second subregion Mechanical isolation. 如請求項6之系統,其中該至少一個表面特徵包含凹入至外部表面中之至少一個凹槽。The system of claim 6, wherein the at least one surface feature comprises at least one groove recessed into the exterior surface. 如請求項7之系統,其中該至少一個表面特徵包含複數個凹槽;每一凹槽包圍該套管;且每一凹槽具有一凹槽形狀。The system of claim 7, wherein the at least one surface feature comprises a plurality of grooves; each groove surrounds the sleeve; and each groove has a groove shape. 如請求項8之系統,其進一步包含位於該套管之該第一末端及該內壁上的一接地電極;且其中 該複數個凹槽中之一者位於該接地電極與該第一分區之間。 The system of claim 8, further comprising a ground electrode located on the first end and the inner wall of the casing; and wherein One of the plurality of grooves is located between the ground electrode and the first partition. 如請求項9之系統,其中該複數個凹槽中之至少一者相較於至少另一凹槽具有一不同形狀。The system of claim 9, wherein at least one of the plurality of grooves has a different shape than at least one other groove. 如請求項10之系統,其中該套管之外壁的直徑在該第二末端處比在該第一末端處小。The system of claim 10, wherein the outer wall of the sleeve has a smaller diameter at the second end than at the first end. 如請求項3之系統,其中每一致動器電極包圍相關聯分區。The system of claim 3, wherein each actuator electrode surrounds an associated partition. 如請求項3之系統,其中該第二致動信號之該頻譜中的一最小頻率大於該第一致動信號之該頻譜中的一最大頻率。The system of claim 3, wherein a minimum frequency in the spectrum of the second actuation signal is greater than a maximum frequency in the spectrum of the first actuation signal. 如請求項1之系統,其中該控制器經組態以施加該第一致動信號及該第二致動信號包含該控制器經組態以控制一電信號產生器以使得產生該第一致動信號及該第二致動信號且將其施加至各別第一分區及第二分區。The system of claim 1, wherein the controller is configured to apply the first actuation signal and the second actuation signal comprises the controller being configured to control an electrical signal generator so that the first actuation signal is generated The actuation signal and the second actuation signal are applied to the respective first and second partitions. 如請求項14之系統,其進一步包含該電信號產生器。The system according to claim 14, further comprising the electrical signal generator. 如請求項14之系統,其中該第一致動信號及該第二致動信號中之每一者包含至少一個正弦波。The system of claim 14, wherein each of the first actuation signal and the second actuation signal comprises at least one sine wave. 如請求項1之系統,其中該熔融目標材料在處於一電漿狀態時發射極紫外線光。The system of claim 1, wherein the molten target material emits EUV light when in a plasma state. 如請求項1之系統,其中該致動器之該第一分區包含一第一致動器且第二致動器包含不同於該第一致動器之一第二致動器。The system of claim 1, wherein the first section of the actuators includes a first actuator and the second actuator includes a second actuator different from the first actuator. 如請求項18之系統,其中該系統進一步包含與該導管之一內部機械連通的一隔膜;且 該第二致動器機械耦接至該隔膜。 The system of claim 18, wherein the system further comprises a septum in mechanical communication with an interior of the catheter; and The second actuator is mechanically coupled to the diaphragm. 如請求項19之系統,其進一步包含該第一致動器與該第二致動器之間的一運動傳送區塊。The system of claim 19, further comprising a motion transmission block between the first actuator and the second actuator. 如請求項20之系統,其中該第一致動器包含致動元件之一堆疊。The system of claim 20, wherein the first actuator comprises a stack of actuating elements. 如請求項3之系統,其中第二頻譜中之一最大頻率大於第一頻譜中之一最大頻率。The system of claim 3, wherein a maximum frequency in the second frequency spectrum is greater than a maximum frequency in the first frequency spectrum. 一種方法,其包含: 將一導管之一孔口流體耦接至固持熔融目標材料之一儲集器; 將壓力施加至該儲集器,使得該熔融目標材料在該導管中流動; 將一第一致動信號施加至機械耦接至該導管之一致動器的一第一分區,該第一致動信號具有一第一頻譜;及 將一第二致動信號施加至該致動器之一第二分區,其中 該第二致動信號具有一第二頻譜,且 該第二頻譜包含比該第一頻譜高之頻率。 A method comprising: fluidly coupling an orifice of a conduit to a reservoir holding molten target material; applying pressure to the reservoir causing the molten target material to flow in the conduit; applying a first actuation signal to a first section of an actuator mechanically coupled to the catheter, the first actuation signal having a first frequency spectrum; and applying a second actuation signal to a second section of the actuator, wherein the second actuation signal has a second frequency spectrum, and The second spectrum contains higher frequencies than the first spectrum. 如請求項23之方法,其進一步包含: 將一第三致動信號施加至該致動器之一第三分區,其中該第三致動信號具有一第三頻譜。 The method of claim 23, further comprising: A third actuation signal is applied to a third subsection of the actuator, wherein the third actuation signal has a third frequency spectrum. 一種系統,其包含: 一導管,其包含經組態以流體耦接至一儲集器且發射熔融目標材料之一孔口; 一單件式致動器,其機械耦接至該導管,該單件式致動器包含複數個單獨可控分區;及 一控制器,其經組態以將一單獨致動信號施加至至少一第一分區及一第二分區中之每一者。 A system comprising: a conduit comprising an orifice configured to be fluidly coupled to a reservoir and emit molten target material; a one-piece actuator mechanically coupled to the catheter, the one-piece actuator comprising a plurality of individually controllable sections; and A controller configured to apply a separate actuation signal to each of at least a first partition and a second partition. 如請求項25之系統,其中一凹槽形成於該第一分區與該第二分區之間的該單件式致動器之一外表面中,且該凹槽經組態以部分地機械解耦該第一分區與該第二分區。The system of claim 25, wherein a groove is formed in an outer surface of the one-piece actuator between the first subregion and the second subregion, and the groove is configured to partially mechanically decouple coupling the first partition and the second partition. 一種系統,其包含: 一導管,其包含經組態以流體耦接至一儲集器且發射熔融目標材料之一孔口; 一致動器,其機械耦接至該導管,該致動器包含複數個單獨可控分區,其中 該複數個單獨可控分區包含至少一第一分區及一第二分區, 該第二分區位於該第一分區與該孔口之間;且 該第二分區小於該第一分區;及 一控制器,其經組態以將一第一致動信號施加至該第一分區且將一第二致動信號施加至該第二分區。 A system comprising: a conduit comprising an orifice configured to be fluidly coupled to a reservoir and emit molten target material; an actuator mechanically coupled to the catheter, the actuator comprising a plurality of individually controllable segments, wherein The plurality of individually controllable partitions includes at least a first partition and a second partition, the second subregion is located between the first subregion and the orifice; and the second subregion is smaller than the first subregion; and A controller configured to apply a first actuation signal to the first partition and a second actuation signal to the second partition. 如請求項27之系統,其中該第二致動信號包含大於該第一致動信號中之所有頻率的至少一個頻率。The system of claim 27, wherein the second actuation signal includes at least one frequency that is greater than all frequencies in the first actuation signal. 一種致動器,其包含: 一致動器主體,其包含: 一接地分區,其經組態以電連接至一參考電位;及 複數個可控制分區,其中每一可控制分區經組態以接收一控制信號,且其中在操作使用時,該等可控制分區經組態以機械耦接至一導管以使得該等可控制分區之運動在該導管之一內部區中產生壓力波。 An actuator comprising: An actuator body comprising: a ground partition configured to be electrically connected to a reference potential; and a plurality of controllable zones, wherein each controllable zone is configured to receive a control signal, and wherein in operative use, the controllable zones are configured to be mechanically coupled to a conduit such that the controllable zones The movement of the pipe generates a pressure wave in an inner region of the catheter. 如請求項29之致動器,其中該致動器主體包含一單件材料;該接地分區及該複數個可控制分區為該單件材料之部分;且該單件材料包含複數個空間特徵;且 該接地分區藉由複數個空間特徵中之一者與該複數個可控制分區分離,且每一可控制分區藉由該複數個空間特徵中之一者與一最接近的可控制分區分離。 The actuator of claim 29, wherein the actuator body comprises a single piece of material; the ground zone and the plurality of controllable zones are part of the single piece of material; and the single piece of material comprises a plurality of spatial features; and The grounded subregion is separated from the plurality of controllable subregions by one of the plurality of spatial features, and each controllable subregion is separated from a closest controllable subregion by one of the plurality of spatial characteristics. 如請求項29之致動器,其中該等可控制分區中之至少一者為並不直接接觸其他可控制分區或該地分區中之任一者的一單獨材料件。The actuator of claim 29, wherein at least one of the controllable zones is a separate piece of material that does not directly contact any of the other controllable zones or the zone. 如請求項29之致動器,其中該致動器主體包含經組態以包圍該導管之一實質上圓柱形側壁。 The actuator of claim 29, wherein the actuator body includes a substantially cylindrical sidewall configured to surround the conduit.
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