TW202315178A - Method of manufacturing piezoelectric transducer - Google Patents
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Abstract
Description
本揭露是有關於一種壓電傳感器的製作方法。The present disclosure relates to a manufacturing method of a piezoelectric sensor.
現今半導體的製造方法已趨成熟,在多數半導體製程當中,製程不斷重覆的在基材上對各種材料進行蝕刻、拋光,將材料製作成特定圖案,並堆疊材料而形成最終積體電路。在金屬層蝕刻之前,會先於金屬層上使用光阻材料製作成具有特定圖案的遮罩,在對金屬層進行蝕刻以獲得特定圖案的蝕刻結果。Today's semiconductor manufacturing methods have matured. In most semiconductor manufacturing processes, the process repeatedly etches and polishes various materials on the substrate, makes the materials into specific patterns, and stacks the materials to form the final integrated circuit. Before the metal layer is etched, a photoresist material is used to make a mask with a specific pattern on the metal layer, and then the metal layer is etched to obtain an etching result of a specific pattern.
然而,目前使用製造光阻遮罩的步驟包含旋塗光阻、進行曝光微影步驟等濕式製程,需要一定時間才可以完成光阻製作,並且需要投資濕式製程設備以及光阻劑才得以製作光阻遮罩,這些步驟所需要的時間以及花費對於整體製造成本佔有一定數量的影響。However, the steps currently used to manufacture photoresist masks include wet processes such as spin-coating photoresist, exposure and lithography steps, etc. It takes a certain amount of time to complete photoresist production, and requires investment in wet process equipment and photoresist. Making the photoresist mask, the time and cost of these steps contribute a certain amount to the overall manufacturing cost.
因此,如何提出一種可解決上述問題的壓電傳感器的製作方法,是目前業界亟欲投入研發資源解決的問題之一。Therefore, how to propose a method for manufacturing a piezoelectric sensor that can solve the above-mentioned problems is one of the problems that the industry is eager to invest in research and development resources to solve.
有鑑於此,本揭露之一目的在於提出一種可有效解決上述問題的壓電傳感器的製作方法。In view of this, one purpose of the present disclosure is to propose a method for manufacturing a piezoelectric sensor that can effectively solve the above problems.
本揭露是有關於一種壓電傳感器的製作方法包含:形成至少一金屬層於至少一基材上;於至少一金屬層上依序形成複數個遮罩單元,其中遮罩單元形成遮罩圖案;經由遮罩圖案蝕刻至少一金屬層;以及移除遮罩圖案。The present disclosure relates to a manufacturing method of a piezoelectric sensor comprising: forming at least one metal layer on at least one substrate; sequentially forming a plurality of mask units on the at least one metal layer, wherein the mask units form a mask pattern; Etching at least one metal layer through the mask pattern; and removing the mask pattern.
在目前一些實施方式中,形成至少一金屬層於至少一基材上之步驟包含在至少一基材的兩對應面分別形成兩個金屬層。In some current embodiments, the step of forming at least one metal layer on at least one substrate includes forming two metal layers on two corresponding surfaces of the at least one substrate.
在目前一些實施方式中,於至少一金屬層上依序形成遮罩單元之步驟包含於至少一金屬層上的不同位置依序且定量輸出材料。In some current embodiments, the step of sequentially forming mask units on the at least one metal layer includes sequentially and quantitatively outputting materials at different positions on the at least one metal layer.
在目前一些實施方式中,於至少一金屬層上依序形成遮罩單元之步驟包含定位模具於至少一金屬層上方,其中模具具有多個鏤空部;以及將材料依序穿過鏤空部而形成在至少一金屬層上。In some current embodiments, the step of sequentially forming the mask unit on at least one metal layer includes positioning a mold above the at least one metal layer, wherein the mold has a plurality of hollow parts; and sequentially passing materials through the hollow parts to form on at least one metal layer.
在目前一些實施方式中,材料為光固化的高分子聚合物,且於至少一金屬層上依序形成遮罩單元之步驟進一步包含利用紫外光照射材料,以將材料固化成遮罩單元。In some current embodiments, the material is a photocurable polymer, and the step of sequentially forming the mask unit on the at least one metal layer further includes irradiating the material with ultraviolet light to cure the material into the mask unit.
在目前一些實施方式中,於至少一金屬層上依序形成遮罩單元之步驟進一步包含加熱材料,以將材料固化成遮罩單元,其中材料為熱固化高分子聚合物。In some current embodiments, the step of sequentially forming the mask unit on the at least one metal layer further includes heating the material to solidify the material into the mask unit, wherein the material is a thermosetting polymer.
在目前一些實施方式中,材料包含油墨。In some present embodiments, the material comprises ink.
在目前一些實施方式中,移除遮罩圖案之步驟包含利用至少一有機溶劑溶解遮罩圖案。In some current embodiments, the step of removing the mask pattern includes using at least one organic solvent to dissolve the mask pattern.
在目前一些實施方式中,移除遮罩圖案之步驟包含利用機械剝離製程移除遮罩圖案。In some current embodiments, the step of removing the mask pattern includes removing the mask pattern using a mechanical lift-off process.
在目前一些實施方式中,至少一金屬層與至少一基材的數量為複數,且形成至少一金屬層於至少一基材上的步驟包含堆疊基材與金屬層。In some current embodiments, the at least one metal layer and the at least one substrate are plural, and the step of forming the at least one metal layer on the at least one substrate includes stacking the substrate and the metal layer.
在目前一些實施方式中,堆疊基材與金屬層的步驟包含交替堆疊基材與金屬層。In some current embodiments, the step of stacking the substrate and the metal layer includes alternately stacking the substrate and the metal layer.
在目前一些實施方式中,至少一基材的材料包含聚偏二氟乙烯或其共聚物。In some current embodiments, the material of at least one substrate comprises polyvinylidene fluoride or a copolymer thereof.
在目前一些實施方式中,至少一金屬層的材料包含金、銅、鉻、鎳、鈦以及鋁的至少一者。In some current embodiments, the material of at least one metal layer includes at least one of gold, copper, chromium, nickel, titanium and aluminum.
綜上所述,於本揭露的壓電傳感器的製作方法中,在金屬層上方藉由使用模具噴塗或是點塗材料的方法,可以節省曝光顯影的步驟以及投資於濕式製程機台的成本,以達到節省製造步驟、製造時間以及製造成本的效果。另一方面,透過利用光固化的方式(例如,使用紫外光照射)對材料執行固化製程,可以更有效率的降低製造時間。再者,用於製作遮罩圖案的材料選擇更為多元,使用高分子聚合物、油墨或者具有高剪切強度以及低剝離強度的材料代替一般光阻材料,以達到節省製造成本的效果。進一步來說,由於材料所具有的化學及物理特性,因此於移除遮罩圖案時可以藉由有機溶劑溶解材料或是使用機械剝除方法直接一次性的移除材料,大幅節省了製造時間。To sum up, in the manufacturing method of the piezoelectric sensor disclosed in the present disclosure, by spraying or dispensing materials on the metal layer, the steps of exposure and development and the cost of investing in wet process equipment can be saved. , so as to achieve the effect of saving manufacturing steps, manufacturing time and manufacturing cost. On the other hand, by performing a curing process on the material by photocuring (for example, using ultraviolet light irradiation), the manufacturing time can be reduced more efficiently. Furthermore, the selection of materials for making the mask pattern is more diverse, using polymers, inks, or materials with high shear strength and low peel strength instead of general photoresist materials, so as to achieve the effect of saving manufacturing costs. Furthermore, due to the chemical and physical properties of the material, when removing the mask pattern, the material can be removed by dissolving the material with an organic solvent or using a mechanical stripping method, which greatly saves the manufacturing time.
以下揭露內容提供用於實施所提供標的之不同特徵的許多不同實施例或實例。以下描述部件及佈置之特定實例以簡化本揭露。當然,此些僅為實例,且並不意欲為限制性的。舉例而言,在如下描述中第一特徵在第二特徵之上或在第二特徵上形成可包括其中第一特徵與第二特徵形成為直接接觸之實施例,且亦可包括其中額外特徵可在第一特徵與第二特徵之間形成而使得第一特徵與第二特徵可不直接接觸的實施例。另外,本揭露可在各種實例中重複元件符號及/或字母。此重複係出於簡化及清楚目的,且其自身並不表示所論述之各種實施例及/或配置之間的關係。The following disclosure provides many different embodiments, or examples, for implementing different features of the provided subject matter. Specific examples of components and arrangements are described below to simplify the present disclosure. Of course, these are examples only, and are not intended to be limiting. For example, in the following description a first feature is formed on or on a second feature may include embodiments where the first feature is formed in direct contact with the second feature, and may also include embodiments where additional features may be An embodiment formed between a first feature and a second feature such that the first feature and the second feature may not be in direct contact. In addition, the present disclosure may repeat element symbols and/or letters in various examples. This repetition is for simplicity and clarity and does not in itself indicate a relationship between the various embodiments and/or configurations discussed.
另外,為了描述簡單,可在本文中使用諸如「在……下面」、「在……下方」、「下部」、「在……上方」、「上部」及其類似術語之空間相對術語,以描述如諸圖中所示的一個元件或特徵與另一(另外)元件或特徵的關係。除了諸圖中所描繪之定向以外,此些空間相對術語意欲涵蓋元件在使用中或操作中之不同定向。裝置可以其他方式定向(旋轉90度或以其他定向),且可同樣相應地解釋本文中所使用之空間相對描述詞。Additionally, for simplicity of description, spatially relative terms such as "below," "beneath," "lower," "above," "upper," and similar terms may be used herein to describe Describes the relationship of one element or feature to another (further) element or feature as shown in the figures. Such spatially relative terms are intended to encompass different orientations of the elements in use or operation in addition to the orientation depicted in the figures. The device may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly.
本文中使用的「大約」、「約」、「近似」或者「實質上」一般表示落在給定值或範圍的百分之二十之中,或在百分之十之中,或在百分之五之中。本文中所給予的數字量值為近似值,表示使用的術語如「大約」、「約」、「近似」或者「實質上」在未明確說明時可以被推斷。As used herein, "approximately", "approximately", "approximately" or "substantially" means falling within twenty percent, or within ten percent, or within one hundred percent of a given value or range Five out of five. Numerical quantities given herein are approximations, meaning that terms such as "about," "about," "approximately," or "substantially" can be inferred when not expressly stated otherwise.
第1圖為根據本揭露其中一實施例的壓電傳感器的製作方法之流程圖。一種壓電傳感器的製作方法M1包含:形成至少一金屬層於至少一基材上(步驟S101);於至少一金屬層上依序形成複數個遮罩單元,其中遮罩單元形成遮罩圖案(步驟S102);經由遮罩圖案蝕刻至少一金屬層(步驟S103);以及移除遮罩圖案(步驟S104)。FIG. 1 is a flowchart of a manufacturing method of a piezoelectric sensor according to an embodiment of the present disclosure. A manufacturing method M1 of a piezoelectric sensor includes: forming at least one metal layer on at least one substrate (step S101); sequentially forming a plurality of mask units on at least one metal layer, wherein the mask units form a mask pattern ( Step S102 ); etching at least one metal layer through the mask pattern (step S103 ); and removing the mask pattern (step S104 ).
第2A圖為根據本揭露一實施例的壓電傳感器100的製作方法M1之一中間階段的示意圖。第2B圖為根據本揭露一實施例的壓電傳感器100的製作方法M1之一中間階段的示意圖。第2C圖為根據本揭露一實施例的壓電傳感器100的製作方法M1之一中間階段的示意圖。第2D圖為根據本揭露一實施例的壓電傳感器100的製作方法M1之一中間階段的示意圖。請參照第1圖至第2D圖,具體來說,金屬層120可以藉由任何適當的方法,例如,物理沉積法或化學沉積法被形成在基材110上方。在一些實施例中,至少一金屬層120的材料包含金、銅、鉻、鎳、鈦以及鋁的至少一者,但本揭露並不以此為限。具體來說,金屬層120的材料只要為適用的導電材料即可。在一些實施例中,至少一基材110的材料包含聚偏二氟乙烯或其共聚物,但本揭露並不以此為限。具體來說,基材110為一種壓電材料,壓電材料的特性在於可以藉由改變材料形狀產生電壓變化,或者對壓電材料施加電壓使其產生材料形狀變化。FIG. 2A is a schematic diagram of an intermediate stage of the manufacturing method M1 of the
接著,遮罩單元被依序製作在金屬層120上方,舉例來說,在一些實施例中,可以由金屬層120的一側沿著特定方向製作多個遮罩單元至金屬層120對應的另一側,但本揭露並不以此為限。在另外一些實施例中,依序製作也可以是在金屬層120上劃分多個特定區域,並按照一定順序在多個特定區域中製作遮罩單元。多個遮罩單元被製造完成之後,共同於金屬層120上方形成遮罩圖案130。當遮罩圖案130被製作完成之後,藉由遮罩圖案130的阻擋金屬層120的特定部位,並且蝕刻金屬層120,以在金屬層120中製作具有特定圖案的金屬導電結構。當蝕刻完成之後可以在不毀損金屬層120的狀態下移除遮罩圖案130。有關於上述製作遮罩圖案130方法以及移除遮罩圖案130方法的細節將在下文被詳細描述。Next, the masking units are fabricated sequentially above the
請參照第2A圖,第2A圖為繪示將金屬層120形成於基材110的表面。形成金屬層120可以使用任意合適的方法,例如物理沉積法或化學沉積法。請參照第2B圖,第2B圖為繪示在金屬層120上方製作遮罩圖案130的其中一個過程的示意圖。在一些實施例中,步驟S102包含:定位模具200於至少一金屬層120上方,其中模具200具有多個鏤空部;以及將材料依序穿過鏤空部而形成在至少一金屬層120上。舉例來說,遮罩單元被依序規劃排列,並且標記在一個可以用於轉印的模具200上。在一些實施例中,模具200透過根據遮罩單元所排列出的鏤空部來實現模具200的轉印效果。舉例來說,模具200可以為多處鏤空的材料,並且可以為任意適合的材質,例如,網版印刷所使用的網目。在其他例子中,模具200的材質也可以由複合性的材料組成,可以使用與網目不同的材料。模具200具有鏤空的板材並且板材邊緣被突起邊框圍繞。Please refer to FIG. 2A . FIG. 2A shows the formation of the
模具200的使用方法是將一定數量的材料置入模具200內,並且將材料平均的分布於模具200中。舉例來說,可以藉由移動式出料噴口,例如類似影印裝置所使用的出料噴口,在置入材料時將其平均分布於模具200中。出料噴口於運作時具有一定的方向性,因此材料是依序的沿著特定方向被平均分布在模具200中。在另外一個例子中,可以在將材料置入模具200後,使用刮板或其他機械方式將材料平均塗抹於模具200中。使用刮板以及其他機械方式平均塗抹材料時,根據塗抹方向以及位置,材料也將依照一定的順序被分布於模具200中。在平均塗佈材料於模具200時,模具200的邊框可以防止多餘的材料溢出模具200,以免沾染基材110或金屬層120。The method of using the
另一方面,材料的分布份量可以藉由噴口所控制,以節省多餘用料。舉例來說,採用在將材料置入模具200後,使用刮板或其他機械方式將材料平均塗抹於模具200中的方法,即可以在將材料至於模具200時對用料進行控制,以降低多餘材料的使用。或者,採用材料噴口,在置入材料時將其平均分布於模具200中,可以藉由控制噴口的出料量降低多餘材料的使用,但本揭露並不以此為限。On the other hand, the amount of material distribution can be controlled by the spout to save excess material. For example, after placing the material into the
於實際製作遮罩圖案130時,模具200首先被定位於金屬層120上方,材料接續被置於模具200中。接著,將平均分布材料於模具200。於此同時,材料將隔著模具200被依序施加至金屬層120上方。材料施加於金屬層120上的順序將依照選用的平均分布材料於模具200中的方法而有所差異。具體來說,若材料藉由噴口噴灑,材料將由模具200的一端沿著一個特定方向平均分布在模具200上。另一方面若材料藉由刮塗的方式分布於模具200中,則材料將根據刮塗的位置與順序依序平均分布在模具200上。平均分布於模具200的材料將部分穿過模具200鏤空部被施加在金屬層120上方,在金屬層120上方形成遮罩單元。此種平均分布材料的做法,將有助於確保材料是以相等分量被施加於各別位置,有助於後續固化材料製程以及移除材料製程的製造統一性。When actually manufacturing the
本揭露所提供的方法M1,在施加材料的同時完成遮罩圖案130製作,相較於目前常見用於製造遮罩圖案130的方法(即,利用在金屬層120上旋塗光阻並且利用微影圖案化光阻兩步驟來製作遮罩圖案130)更節省製造時間與製造成本。其原因在於,本揭露所提供的方法M1不需要使用曝光顯影設備,因此可以節省用於進行曝光顯影的時間以及使用曝光顯影等機台的製造成本。The method M1 provided by the present disclosure completes the fabrication of the
在一些實施例中,步驟S102進一步包含加熱材料,以將材料固化成遮罩圖案130,其中材料為熱固化高分子聚合物。具體來說,在一些實施例中使用材料形成遮罩單元之後,可以藉由適當的為材料加熱,使遮罩圖案130穩固地被設置於金屬層120上,但本揭露並不以此為限。In some embodiments, the step S102 further includes heating the material to solidify the material into the
在一些實施例中,材料為光固化材料,且步驟S102進一步包含利用紫外光照射材料,以將材料固化成遮罩圖案130。具體來說,當材料具有光固化性質時可以利用照射特定波長(例如,紫外光波長)的光線,來使材料固化,但本揭露並不以此為限。藉由紫外光固化的效果,使得遮罩圖案130可以以更短的製程時間,將材料穩固的設置於金屬層120上方。在一些實施例中,材料包含油墨,但本揭露並不以此為限。具體來說,用於製作遮罩圖案130的材料需要具備抵抗蝕刻的能力,並且還要可以平均分布於金屬層120上方。In some embodiments, the material is a photo-curable material, and the step S102 further includes irradiating the material with ultraviolet light to cure the material into the
具體來說,當遮罩圖案130被施加於金屬層120上方後,仍需要進行固化製程以確保遮罩圖案130達到良好的遮罩效果。另一方面,進行固化也可以進一步固定遮罩圖案130,以於後續蝕刻製程中保護位於遮罩圖案130下方的金屬層120的完整。進一步來說,當材料被固化之後,材料將會具有高剪切強度以及低剝離強度。高剪切強度說明,固化後的材料對於施加於材料上平行且方向相反的力具有較高對抗性,因此可以避免固化後的材料,因為受到側向施力而產生形變或位移。同時,當材料被固化之後將具有低剝離強度。剝離強度即是說明,要剝離此材料所需要的最大施力。固化後材料具有的低剝離強度特性,有助於後續移除遮罩圖案130時,使用機械剝離方法移除。並且,低剝離強度結合高剪切強度可以避免材料在使用機械剝離方法移除時,產生部分移除的結果,以確保製程的效率以及遮罩圖案130移除時,金屬層120表面的完整性。Specifically, after the
請參照第2C圖,第2C圖為繪示藉由遮罩圖案130的阻擋蝕刻金屬層120的其中一個過程的示意圖。蝕刻的方式可以藉由任何合適的蝕刻法在金屬層120以及遮罩圖案130上進行等向蝕刻或非等向蝕刻。請參照第2D圖,第2D圖為繪示移除遮罩圖案130的其中一個過程的示意圖。在一些實施例中,步驟S104包含利用機械剝離製程移除遮罩圖案130。具體來說,在蝕刻金屬層120之後移除遮罩圖案130時,可以使用具有黏性的可撓材料300撕除遮罩圖案130。首先,將可撓材料300平均貼附在遮罩圖案130表面。接著,由可撓材料300的一個邊緣向上帶起遮罩圖案130。由具有金屬層120的基材110的一側沿著特定方向撕起可撓材料300,並藉由機械剝除將遮罩圖案130自金屬層120上撕除。如此一來,施加於金屬層120上方的遮罩圖案130可以藉由機械剝離方法完整的自金屬層120上被移除。使用機械剝除製程移除遮罩圖案130可以節省濕式剝除光阻的步驟,以節省整體製造成本。Please refer to FIG. 2C , which is a schematic diagram illustrating one process of etching the
第3A圖為根據本揭露另一實施例的壓電傳感器100的製作方法M1之一中間階段的示意圖。第3B圖為根據本揭露另一實施例的壓電傳感器100的製作方法M1之一中間階段的示意圖。第3C圖為根據本揭露另一實施例的壓電傳感器100的製作方法M1之一中間階段的示意圖。第3D圖為根據本揭露另一實施例的壓電傳感器100的製作方法M1之一中間階段的示意圖。請參照第3A圖,第3A圖為繪示將金屬層120形成於基材110的表面。形成金屬層120可以使用任意合適的方法,例如物理沉積法或化學沉積法。請參照第3B圖,第3B圖為繪示在金屬層120上方製作遮罩單元的其中一個過程的示意圖。在另外一些實施例中,步驟S102包含於至少一金屬層120上的不同位置依序且定量輸出材料。具體來說,材料輸出端為一個可定量控制出料量的材料出口,並且材料輸出端可以藉由移動裝置被移動至預定位置進行出料。材料輸出端的出料量以及移動位置可以結合電腦運算設備控制,但本揭露並不以此為限。FIG. 3A is a schematic diagram of an intermediate stage of the manufacturing method M1 of the
舉例來說,當材料輸出端運行時與金屬層120之間具有第一距離,電腦將根據預定的圖案將材料輸出端在維持第一距離的狀態下,平行地將材料輸出端移動至一個預定位置。確認移動至預定位置之後,移動材料輸出端使其與金屬層120之間具有第二距離。接著,電腦使材料輸出端按照設定於預定位置輸出定量材料。接著將材料輸出端與與金屬層120之間回到第一距離之後,再次移動材料輸出端至下一個預定位置再進行出料。如此一來,材料可以藉由控制材料輸出端位置在金屬層120上方依次序被排列成遮罩單元的圖案。在一些實施例中,可以同時使用多個材料輸出端同時進行遮罩單元的設置。或者,在另外一些實施例中,可以固定材料輸出端,改為移動金屬層120以及基材110的位置以在金屬層120上製作遮罩圖案130。然而,上述說明僅只為其中一些實施方式,本揭露之內容並不以此為限。For example, when there is a first distance between the material output terminal and the
在遮罩單元被依序製作之後,接著進行材料固化製程。材料固化的方法可以依照不同的材料特性使用前述段落所說明的光固化方法或是熱固化方法,但本揭露並不以此為限。After the mask units are manufactured sequentially, a material curing process is then performed. The material curing method can use the light curing method or the thermal curing method described in the preceding paragraphs according to different material properties, but the present disclosure is not limited thereto.
請參照第3C圖,第3C圖為繪示藉由遮罩圖案130的阻擋蝕刻金屬層120的其中一個過程的示意圖。蝕刻的方式可以藉由任何合適的蝕刻法在金屬層120以及遮罩圖案130上進行等向蝕刻或非等向蝕刻。請參照第3D圖,第3D圖為繪示移除遮罩圖案130的其中一個過程的示意圖。在一些實施例中,步驟S104包含利用至少一有機溶劑400溶解遮罩圖案130,但本揭露並不以此為限。具體來說,一些材料具有可以被有機溶劑400溶解的特性,因此可以藉由大面積噴灑有機溶劑400於遮罩圖案130上方,以溶解遮罩圖案130,並同時保持下方蝕刻後金屬層120的完整性。舉例來說,在蝕刻金屬層120製程過後,可以藉由噴灑裝置在遮罩圖案130上方均勻施加有機溶劑400以溶解遮罩圖案130。使用有機溶劑400溶解遮罩圖案130可以減少製造過程中所使用的濕式製程的儀器成本,並且維持與現有濕式製程相同的製造效果。Please refer to FIG. 3C , which is a schematic diagram illustrating one process of etching the
第4圖為根據本揭露其中一實施例的壓電傳感器100的剖面結構圖。在一些實施例中,步驟S101包含在至少一基材110的兩對應面分別形成兩個金屬層120,但本揭露並不以此為限。具體來說,兩金屬層120上方皆可以藉由前述的透過模具200均勻塗佈或者定量點塗的方法製作遮罩圖案130並且進行蝕刻,但本揭露並不以此為限。金屬層120可以設置於基材110上方的任意位置,並且其數目並不只限於兩個。如第2B圖及第3B圖所示的遮罩圖案130可以製造在任意位置的金屬層120上方。FIG. 4 is a cross-sectional structure diagram of a
舉例來說,如第4圖中所示的實施例,金屬層120被生長於基材110(例如,壓電材料)的兩對應面,使得基材110的兩對應面可以進行電訊號傳輸。此種製造方法可以利用基材110的正壓電效應以及逆壓電效應來觸發基材110。正壓電效應可以做為開關使用。具體來說,當壓電材料受到物理壓力時,材料當中的電偶極矩會因為壓力壓縮而變短。壓電材料為了抵抗變化,會在材料相對的表面產生與被壓縮之電偶極矩等量的正負電荷,稱為材料電極化。因為壓電材料在受到物理壓力時會產生電極化的現象,因此可以做為開關使用。另一方面,逆壓電效應可以做為震動回饋使用。具體來說,當壓電材料表面被施加了電壓,電壓差所產生的電場會拉長材料內的電偶極矩。壓電材料為了抵抗電偶極矩的變化,會沿著電場方向伸長,產生材料的機械形變。因為壓電材料在被施加電場時會產生機械形變現象,因此可以做為震動回饋使用。然而,壓電材料的正壓電效應與負壓電效應的應用範圍並不僅限於上述範例。For example, as in the embodiment shown in FIG. 4 , the
第5圖為根據本揭露其中另一實施例的壓電傳感器100的示意圖。在一些實施例中,至少一金屬層120與至少一基材110的數量為複數,且步驟S101包含堆疊基材110與金屬層120。在一些實施例中,堆疊基材110與金屬層120的步驟包含交替堆疊基材110與金屬層120,但本揭露並不以此為限。具體製造的方法可以結合前述所提到的透過模具200均勻塗佈或者定量點塗的方法製作遮罩圖案130並且進行蝕刻,依序製作單一壓電傳感器100之後再將其堆疊組合。具體來說,壓電材料的堆疊連接,比如並聯或者串聯,可以增強材料壓電特性的效果,以獲得所需要之電路特性。如第5圖所示,結合前述正壓電效應之特性,壓電傳感器100可製作為感測線路500,感測外界壓力(例如,觸碰)。另一方面,結合前述逆壓電效應之特性,壓電傳感器100可製作為驅動線路600,提供震動回饋,但本揭露並不以此為限。FIG. 5 is a schematic diagram of a
以上對於本揭露之具體實施方式之詳述,可以明顯地看出,於本揭露的壓電傳感器的製作方法中,在金屬層上方藉由使用模具噴塗或是點塗材料的方法,可以節省曝光顯影的步驟以及投資於濕式製程機台的成本,以達到節省製造步驟、製造時間以及製造成本的效果。另一方面,透過利用光固化的方式(例如,使用紫外光照射)對材料執行固化製程,可以更有效率的降低製造時間。再者,用於製作遮罩圖案的材料選擇更為多元,使用高分子聚合物、油墨或者具有高剪切強度以及低剝離強度的材料代替一般光阻材料,以達到節省製造成本的效果。進一步來說,由於材料所具有的化學及物理特性,因此於移除遮罩圖案時可以藉由有機溶劑溶解材料或是使用機械剝除方法直接一次性的移除材料,大幅節省了製造時間。From the above detailed description of the specific implementation of the present disclosure, it can be clearly seen that in the manufacturing method of the piezoelectric sensor of the present disclosure, the exposure can be saved by using the method of spraying or spot-coating materials on the metal layer. The steps of developing and the cost of investing in wet process equipment can achieve the effect of saving manufacturing steps, manufacturing time and manufacturing cost. On the other hand, by performing a curing process on the material by photocuring (for example, using ultraviolet light irradiation), the manufacturing time can be reduced more efficiently. Furthermore, the selection of materials for making the mask pattern is more diverse, using polymers, inks, or materials with high shear strength and low peel strength instead of general photoresist materials, so as to achieve the effect of saving manufacturing costs. Furthermore, due to the chemical and physical properties of the material, when removing the mask pattern, the material can be removed by dissolving the material with an organic solvent or using a mechanical stripping method, which greatly saves the manufacturing time.
前文概述了若干實施例之特徵,使得熟習此項技術者可較佳地理解本揭露之態樣。熟習此項技術者應瞭解,他們可容易地使用本揭露作為設計或修改用於實現相同目的及/或達成本文中所介紹之實施例之相同優勢的其他製程及結構的基礎。熟習此項技術者亦應認識到,此些等效構造不脫離本揭露之精神及範疇,且他們可在不脫離本揭露之精神及範疇的情況下於本文作出各種改變、代替及替換。The foregoing outlines features of several embodiments so that those skilled in the art may better understand aspects of the disclosure. Those skilled in the art should appreciate that they can readily use the present disclosure as a basis for designing or modifying other processes and structures for carrying out the same purposes and/or achieving the same advantages of the embodiments described herein. Those skilled in the art should also realize that such equivalent constructions do not depart from the spirit and scope of the present disclosure, and that they may make various changes, substitutions and substitutions herein without departing from the spirit and scope of the present disclosure.
100:壓電傳感器 110:基材 120:金屬層 130:遮罩圖案 200:模具 300:可撓材料 400:有機溶劑 500:感測線路 600:驅動線路 M1:方法 S101,S102,S103,S104:步驟 100: piezoelectric sensor 110: Substrate 120: metal layer 130: mask pattern 200: Mold 300: flexible material 400: organic solvent 500: sensing line 600: drive line M1: method S101, S102, S103, S104: steps
當結合隨附諸圖閱讀時,得以自以下詳細描述最佳地理解本揭露之態樣。應注意,根據行業上之標準實務,各種特徵未按比例繪製。事實上,為了論述清楚,可任意地增大或減小各種特徵之尺寸。 第1圖為根據本揭露其中一實施例的壓電傳感器的製作方法之流程圖。 第2A圖為根據本揭露一實施例的壓電傳感器的製作方法之一中間階段的示意圖。 第2B圖為根據本揭露一實施例的壓電傳感器的製作方法之一中間階段的示意圖。 第2C圖為根據本揭露一實施例的壓電傳感器的製作方法之一中間階段的示意圖。 第2D圖為根據本揭露一實施例的壓電傳感器的製作方法之一中間階段的示意圖。 第3A圖為根據本揭露另一實施例的壓電傳感器的製作方法之一中間階段的示意圖。 第3B圖為根據本揭露另一實施例的壓電傳感器的製作方法之一中間階段的示意圖。 第3C圖為根據本揭露另一實施例的壓電傳感器的製作方法之一中間階段的示意圖。 第3D圖為根據本揭露另一實施例的壓電傳感器的製作方法之一中間階段的示意圖。 第4圖為根據本揭露其中一實施例的壓電傳感器的剖面結構圖。 第5圖為根據本揭露其中另一實施例的壓電傳感器的示意圖。 Aspects of the present disclosure are best understood from the following Detailed Description when read in conjunction with the accompanying drawings. It should be noted that, in accordance with the standard practice in the industry, various features are not drawn to scale. In fact, the dimensions of the various features may be arbitrarily increased or reduced for clarity of discussion. FIG. 1 is a flowchart of a manufacturing method of a piezoelectric sensor according to an embodiment of the present disclosure. FIG. 2A is a schematic diagram of an intermediate stage of the fabrication method of the piezoelectric sensor according to an embodiment of the present disclosure. FIG. 2B is a schematic diagram of an intermediate stage of the fabrication method of the piezoelectric sensor according to an embodiment of the present disclosure. FIG. 2C is a schematic diagram of an intermediate stage of the fabrication method of the piezoelectric sensor according to an embodiment of the present disclosure. FIG. 2D is a schematic diagram of an intermediate stage of the manufacturing method of the piezoelectric sensor according to an embodiment of the present disclosure. FIG. 3A is a schematic diagram of an intermediate stage of a fabrication method of a piezoelectric sensor according to another embodiment of the present disclosure. FIG. 3B is a schematic diagram of an intermediate stage of the fabrication method of the piezoelectric sensor according to another embodiment of the present disclosure. FIG. 3C is a schematic diagram of an intermediate stage of a fabrication method of a piezoelectric sensor according to another embodiment of the present disclosure. FIG. 3D is a schematic diagram of an intermediate stage of a fabrication method of a piezoelectric sensor according to another embodiment of the present disclosure. FIG. 4 is a cross-sectional structure diagram of a piezoelectric sensor according to an embodiment of the present disclosure. FIG. 5 is a schematic diagram of a piezoelectric sensor according to another embodiment of the present disclosure.
國內寄存資訊(請依寄存機構、日期、號碼順序註記) 無 國外寄存資訊(請依寄存國家、機構、日期、號碼順序註記) 無 Domestic deposit information (please note in order of depositor, date, and number) none Overseas storage information (please note in order of storage country, institution, date, and number) none
M1:方法 M1: method
S101,S102,S103,S104:步驟 S101, S102, S103, S104: steps
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2021
- 2021-09-23 CN CN202111116189.7A patent/CN113851577B/en active Active
- 2021-09-28 TW TW110136111A patent/TWI798846B/en active
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CN113851577B (en) | 2024-02-20 |
TWI798846B (en) | 2023-04-11 |
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