TW202315153A - Substrate processing system and substrate processing method - Google Patents

Abstract

The disclosure provides a substrate processing system and method. The substrate processing system includes: a frame provided with an opening; and a film configured to couple to the frame and cover at least a portion of the frame opening, the film comprising a film opening, wherein a film opening area of the film opening is equal to or less than a frame opening area of the frame opening; wherein the film is configured to couple with the substrate, wherein when the substrate is coupled with the film, the substrate covers the film opening, and the film is configured to maintain the substrate in a set position relative to the frame; and the opening area of the film is less than the total area of the substrate, and the processing method based on the substrate processing system can avoid turning the substrate over, so as to improve the quality of the finished product of the solar cell element.

Description

Substrate processing system and method thereof

The invention relates to the field of solar cells, in particular to a substrate processing system and method thereof.

Solar cells, also known as photovoltaic cells, are power generation technologies that use the photoelectric effect to directly convert solar radiation into electrical energy. They have the advantages of sufficient resources, cleanliness, safety, and long service life, and are considered to be one of the most promising renewable energy technologies. one.

At present, silicon heterojunction cells in solar cells have the advantages of low-temperature preparation, simple process steps, superior temperature coefficient, and good product stability, and are expected to become one of the mainstream technologies in the photovoltaic industry. The silicon heterojunction cell includes: a single-crystal silicon substrate, after roughening the front and rear surfaces of the single-crystal silicon substrate, and then forming an essential layer on the front and back of the single-crystal silicon substrate, and an N-type The P-type doped layer on the doped layer and the back essential layer, and then form a conductive transparent layer on the N-type doped layer and a conductive transparent layer on the P-type doped layer.

However, current existing systems for making silicon heterojunction cells require breaking down the system into several reaction chambers and requiring automated equipment to dispense the substrates onto substrate carriers and then collect the substrates back after processing. At the same time, the substrate needs to be turned over to complete the deposition of plasma on the back side of the substrate. However, in doing so, on the one hand, the flipped substrate has to clamp the substrate, and the clamping action may damage the substrate; on the other hand, the plasma occurs Diffusion will cause particles to easily occur on the surface of the substrate, affecting the quality of the finished solar cell components.

The invention provides a substrate processing system and method thereof, which can avoid flipping the substrate and improve the quality of finished products of solar battery elements.

In a first aspect, the present invention provides a system for processing a substrate comprising: a frame including a frame opening; and a membrane configured to be coupled to the frame and cover at least a portion of the frame opening, the membrane comprising a membrane opening, wherein the membrane opening has a membrane opening area equal to or less than a frame opening area of the frame opening; wherein the membrane is configured for coupling with the substrate, wherein when the substrate and the membrane When coupled, the substrate covers the membrane opening and wherein the membrane is configured to maintain the substrate in a set position relative to the frame, and wherein the membrane opening area is less than the total area of the substrate.

The beneficial effects of the substrate processing system provided by the present invention are: by setting a thin film around the substrate, the thin film acts as a barrier, which can prevent the plasma from diffusing to the back of the substrate during the plasma deposition process on the front of the substrate, and avoid plasma deposition on the back of the substrate. During the process, the plasma diffuses to the front of the substrate, and because the frame is provided with a thin film, the plasma deposition can be completed on the front and back of the substrate on the frame, thereby avoiding flipping the substrate and improving the quality of the finished solar cell module.

Optionally, the system further includes the substrate, wherein the substrate is coupled to the membrane and covers the membrane opening.

Optionally, the substrate is coupled to the membrane via an adhesive or via one or more clamps.

Optionally, the membrane is in tension when the membrane is coupled to the frame.

Optionally, at least a portion of the film is a component of a solar cell.

Optionally, the system further includes a transport track configured to transport the frame when the film is coupled to the frame, and to transport the frame when the substrate is coupled to the film. The transport track enables the frame to be transported along the transport path, or the transport track enables the frame to be moved from one processing station to the next.

Optionally, the frame includes a first magnet, and wherein the transport track includes a second magnet configured to interact with the first magnet of the frame to hold the frame At a certain position relative to the transport track, the function of the first and second magnets is to keep the frame in a vertical orientation.

Optionally, the system further comprises a plurality of processing stations, wherein the transfer track is configured to sequentially move the frame, the film and the substrate to the processing stations.

Optionally, the processing station includes at least two of the etching station, plasma enhanced chemical vapor deposition (PECVD) station and physical vapor deposition (physical vapor deposition, PVD) station . an etching station configured to provide dry etching for the substrate; a plasma enhanced chemical vapor deposition (PECVD) station configured to provide PECVD deposition for the substrate; a physical vapor deposition a physical vapor deposition (PVD) station configured to provide PVD deposition for the substrate;

Optionally, the system further includes a memory configured to accommodate a plurality of frames carrying a plurality of substrates, wherein one of the plurality of frames is a frame having the frame opening, and wherein the One of the plurality of substrates is the substrate coupled to the membrane.

Optionally, the membrane is configured to form a seal around the substrate. The sealed structure can avoid the diffusion of plasma.

Optionally, the membrane includes an additional membrane opening, wherein the membrane is configured to be coupled to an additional substrate such that the additional substrate covers the additional membrane opening.

Optionally, the system is configured to process the substrate to fabricate one or more solar cells.

Optionally, the frame includes a plasma resistant coating that protects the frame from plasma corrosion.

Optionally, the system further includes a first isolation grid disposed on the first surface of the film, and a second isolation grid disposed on the second surface of the film, wherein the The second surface is opposite the first surface of the film. The function of the first isolation grid and the second isolation grid is to isolate adjacent substrates.

Optionally, the system further includes a vertical holding mechanism configured to hold the frame vertically. In some cases, the vertical retention mechanism may include a magnet that interacts with another magnet at the frame. The function of the vertical holding mechanism keeps the frame in a vertical orientation, so that the deposition on the front side and the back side of the substrate can be completed. Compared with the horizontal orientation, the plane area occupied by the frame is smaller, thereby reducing the footprint of the solar cell manufacturing system. save costs.

Optionally, the system also includes a vertical holding mechanism, and the vertical holding mechanism at the top of the frame can also be a transmission track or a restraint mechanism, that is, the vertical holding mechanism at the top of the frame is not provided with a magnet, but a transmission track or a restraint mechanism, so as to avoid Magnets affect plasma deposition.

In a second aspect, the present invention provides a substrate processing method, comprising: providing a frame including a frame opening, wherein a film having a film opening is coupled to a frame covering at least part of the frame opening, wherein a substrate is coupled to a film covering the film opening; The frame, the film and the substrate are held together vertically; a first I layer is formed over a first surface of the substrate when the substrate is oriented vertically; a second I layer is formed over a second surface of the substrate when the substrate is oriented vertically layer, the second surface of the substrate is opposite to the first surface; an N layer is formed above the first I layer when the substrate is vertically oriented; and a P layer is formed above the second I layer when the substrate is vertically oriented.

The beneficial effect of the substrate processing method provided by the present invention is that the vertical orientation can occupy a smaller area during the substrate processing process, and the method allows substrate processing to be performed on two opposite surfaces of the substrate in the vertical orientation from opposite sides of the transport path . Therefore, during the solar cell element manufacturing process, there is no need to turn over the substrate, avoiding the clamping operation of the substrate, which can effectively improve product quality, and the film can act as a barrier, which can avoid the plasma deposition process on the front side of the substrate. Diffusion to the back of the substrate, and avoiding plasma diffusion to the front of the substrate during plasma deposition on the back of the substrate.

Optionally, the method further includes: forming a first conductive layer over the first surface of the substrate; and forming a second conductive layer over the second surface of the substrate.

Optionally, the first conductive layer includes a first ITO layer, and the second conductive layer includes a second ITO layer.

Optionally, the method further includes: forming a first conductive line on the first surface of the substrate while the substrate is coupled to the film, the first conductive line connected to the first a surface of a conductive layer; and forming a second conductive line on the second surface of the substrate while the substrate is coupled to the film, the second conductive line being connected to the surface of the second conductive layer .

Optionally, the first conductive line extends beyond the first edge of the substrate.

Optionally, the second conductive line extends beyond a second edge of the substrate, the second edge being opposite to the first edge of the substrate.

Optionally, the substrate, at least a part of the thin film, the first I layer, the N layer, the second I layer, the P layer, the first conductive layer and the second The conductive layers together form a first die set; and wherein the method further includes connecting the first die set and the second die set to form a component.

Optionally, the first module and the second module are connected using adhesive.

Optionally, the first module includes a first substrate, a first conductive wire above a first surface of the first substrate, and a second conductive wire above a second surface of the first substrate, The second surface of the first substrate is opposite to the first surface of the first substrate; the second module includes a second substrate, and the first a conductive line, and a second conductive line over a second surface of the second substrate, the second surface of the second substrate being opposite the first surface of the second substrate; and wherein, when When the first module and the second module are connected, the first conductive wire on the first surface of the first substrate is electrically connected to the second surface of the second substrate of the second conductive wire.

Optionally, the method further comprises: placing a first polymer film and a second polymer film on opposing surfaces of the element; and placing the first polymer film, the element and the second A polymer film is sandwiched between the first glass and the second glass.

Optionally, the first module includes a solar battery module.

Optionally, the method further includes roughening the first surface and the second surface of the substrate when the substrate is vertically oriented, wherein in the first I layer, the N layer, The roughening action is performed before the second I layer and the P layer.

Optionally, the method further comprises moving the frame, the film and the substrate together to a plurality of processing stations, wherein the moving act is performed while the substrate is vertically oriented.

Optionally, the method further includes removing the film from the frame.

Optionally, the substrate is used to fabricate a solar module, and wherein the method further comprises coupling another film to the frame, and coupling another substrate to the film to fabricate another solar module.

Optionally, a peripheral portion of the membrane is coupled to a portion of the membrane defining the membrane opening and forms a seal with the portion of the membrane defining the membrane opening, the seal helping to avoid plasma diffusion , so as to avoid contamination.

Optionally, the membrane includes an additional membrane opening, wherein an additional substrate is coupled to the membrane covering the additional membrane opening.

Optionally, the method further includes providing a roughening treatment on the opposing surface of the substrate. Roughening can be achieved using dry etching.

Optionally, the method further includes, prior to the act of providing roughening, coupling the membrane to a first isolation grid, wherein the first isolation grid is coupled to the first surface of the membrane.

Optionally, the method further includes coupling the membrane to a second isolation grating, wherein the second isolation grid is coupled to a second surface of the membrane, the second surface of the membrane is coupled to the The first surface of the film is opposite.

Optionally, the first isolation grid is configured to isolate the substrate from an additional substrate also coupled to the membrane, wherein at least a portion of the first isolation grid is located between the substrate and the additional substrate between.

Optionally, the method further includes: forming a first conductive layer above the N layer, and forming a second conductive layer above the P layer, wherein the first conductive layer is above the substrate and spans The spacing between the base plate and the additional base plate extends over the additional base plate.

Optionally, the method further includes removing the first isolation grid, wherein removing the first isolation grid removes a portion of the first conductive layer extending over a space between the substrate and the additional substrate, thereby allowing the substrate and the additional substrate to The substrates are electrically isolated.

Optionally, the method further includes removing a portion of the first conductive layer spanning the space between the substrate and the additional substrate using a laser device.

Optionally, the substrate is processed to form the first die set, and the method further includes: forming a second die set using the additional substrate; and combining the conductive lines on the first surface of the first die set with the second die set Conductive threads on the surface are electrically coupled.

Optionally, the act of electrically coupling includes stacking a portion of the second die set on a portion of the first die set such that the conductive lines on the first surface of the first die set are in contact with the conductive lines on the second surface of the second die set. Conductive wire contact.

Optionally, the act of electrically coupling comprises: making a hole through the thickness of the film at a location between the substrate and the additional substrate; and forming an electrical conductor in the hole.

In terms of third parties, the present invention provides a solar cell element, including: a first module, the first module has a first substrate, and the first substrate has a first surface and a second surface opposite to the first surface. surface, the first module further has a first conductive wire arranged on the first surface of the first substrate, and a second conductive wire arranged on the second surface of the first substrate ; a second module with a first surface and a second surface opposite to the first surface, the second module also has a first conductive line arranged on the first surface of the second substrate, and a second module arranged on the second substrate a second conductive line on a second surface; and a film comprising a first film opening and a second film opening, wherein the first substrate and the second substrate are coupled to the first surface of the film, wherein the first a substrate overlies the first membrane opening, and wherein the second substrate overlies the second membrane opening; wherein the membrane includes a through hole at a location between the first substrate and the second substrate and wherein said first conductive line of said first module is electrically connected to said second conductive line of said second module via a conductive line located in said through hole of said film.

The beneficial effect of the solar cell element provided by the invention lies in high product quality and high energy conversion efficiency.

Optionally, the first module further includes a first I layer disposed on the first surface of the first substrate, a second I layer disposed on the second surface of the first substrate, disposed on the first I layer The N layer, and the P layer arranged on the second I layer.

Optionally, the solar cell element further includes a first polymer film and a second polymer film, wherein the first module, the second module and the film are located between the first polymer film and the second polymer film. between the second polymer films.

Optionally, the solar cell element further includes a first glass and a second glass, wherein the first polymer film and the second polymer film are between the first glass and the second glass.

In a fourth aspect, the present invention provides a solar cell element, comprising: a first module, including a first film with a first film opening; and a first substrate covering the first film opening, wherein the first substrate It has a first surface and a second surface opposite to the first surface, wherein the first module further has first conductive wires arranged on the first surface of the first substrate, and arranged on the a second conductive line on the second surface of the first substrate; and a second substrate covering the opening of the second film, wherein the second substrate has a first surface and a first surface opposite to the first surface Two surfaces, wherein the second module further has a first conductive wire disposed on the first surface of the second substrate, and a second conductive wire disposed on the second surface of the second substrate. a conductive line; wherein a portion of the first conductive line of the first module extends beyond the edge of the first substrate and is located on the first film; wherein the second of the second module A portion of the conductive line extends beyond the edge of the second substrate and is located on the second film; and wherein a portion of the second film overlaps a portion of the first film such that the first module The first conductive wire is electrically coupled to the second conductive wire of the second module.

Optionally, the first module further includes a first I layer disposed on the first surface of the first substrate, an N layer disposed on the I layer, and a second I layer disposed on the second surface of the first substrate. layer, and a P layer disposed on the second I layer.

Optionally, the solar cell element further includes a first polymer film and a second polymer film, wherein the first module, the second module and the film are located between the first polymer film and the second polymer film. between the second polymer films.

Optionally, the solar cell element further includes a first glass and a second glass, wherein the first polymer film and the second polymer film are between the first glass and the second glass.

In a fifth aspect, the present invention provides one or more solar cell manufacturing systems, including a transport cavity, and a longitudinally shaped transport track is provided in the transport cavity, and the longitudinally shaped transport track has a second transport track located on both sides of the transport track. One side and the second side; wherein, movable frame (carrier) and have frame opening; wherein film (for example, adhesive film) is adhered to movable frame and has a plurality of film openings, frame opening exposes a plurality of film openings, each The membrane opening exposes a corresponding substrate attached to the membrane.

The beneficial effects of the manufacturing system provided by the present invention are: on the one hand, it can reduce the footprint of the solar cell manufacturing system, save costs; on the other hand, it can avoid the pollution caused by plasma diffusion; finished product quality.

Optionally, the manufacturing system further comprises a front film station having a first electrode on a first side of the transport track and a second electrode on a second side of the transport track, The first electrode and the second electrode are configured to move toward the transport track to form a closed space for accommodating the substrate.

Optionally, the front film station is configured to form a front film layer on the first surface of the substrate.

Optionally, the manufacturing system further includes a back film station having a first electrode located on the second side of the transport track, and a first electrode located on the first side of the transport track The second electrode of the back film station, the first electrode of the back film station and the second electrode of the back film station are configured to move toward the transport track to form a closed space for accommodating the substrate.

Optionally, the back film station is configured to form a back film layer on the back surface of the substrate.

Optionally, the front film station is configured to form the front film layer before the back film station forms the back film layer.

Optionally, the back film station is configured to form the back film layer before the front film station forms the front film layer.

Optionally, the manufacturing system also includes a preparation station and a texturing station, wherein the preparation station and the texturing station are arranged before the front film station and the back film station, and the texturing station configured to provide a roughening treatment on the front surface and the rear surface of the substrate.

Optionally, the manufacturing system further comprises a magnetron sputtering station configured to process the substrate after it has been processed by the front film station and the back film station.

Optionally, the magnetron sputtering station includes a first magnetron sputtering device and a second magnetron sputtering device.

Optionally, the first magnetron sputtering device is configured to face the first surface of the substrate, and is configured to form the front conductive layer on the first surface of the substrate.

Optionally, the second magnetron sputtering device is configured to face the back surface of the substrate, and is configured to form a back conductive layer on the back surface of the substrate.

Optionally, the manufacturing system further includes an isolation grid station configured to arrange isolation grid devices on the first surface and the rear surface of the film between adjacent substrates, respectively.

Optionally, the manufacturing system further includes a texturing station, wherein the texturing station is located before the preparation station, and the barrier station is arranged between the texturing station and the preparation station.

Optionally, the manufacturing system includes a texturing station configured to provide a roughening treatment on the substrate.

Optionally, the texturing station includes dry etching equipment.

Optionally, a texturing station is located between the preparation station and the front/back film station.

Optionally, the material of the isolation grid arrangement includes conductor material and/or tape material.

Optionally, the manufacturing system further includes a stamping station configured to form a through hole through the film between adjacent substrates.

Optionally, the manufacturing system further comprises a bus bar attachment station located after the stamping station, the bus bar attachment station configured to form electrical conductors in the vias (and optionally also in the substrate on the front side and the rear surface of the substrate), such that conductive lines (bus bars) on the front surface of one substrate are electrically connected to conductive lines (bus bars) on the rear surface of an adjacent substrate.

Optionally, the manufacturing system further comprises a laser device configured to remove a portion of the front conductive layer and a portion of the back conductive layer between adjacent substrates.

Optionally, the manufacturing system further includes a loading station located behind the preparation station and before the front film station and the back film station.

Optionally, the manufacturing system further includes a buffer chamber located after the front film station and the back film station and before the magnetron sputtering station.

Optionally, the manufacturing system further includes a preheating station located behind the texturing station and before the front film station and the back film station.

Optionally, the manufacturing system further comprises an unloading station located after the magnetron sputtering station and before the stamping station.

Optionally, the film comprises polyimide, polyester or polypropylene.

Optionally, only a portion of the film surrounding the film window has adhesive properties.

Optionally, said film comprises two planar pieces, one or each of said planar pieces having an adhesive surface, wherein said planar pieces are attached to each other via a last portion of said adhesive surface, wherein said two planar pieces The film openings of one of the two planar members correspond one-to-one to the film openings of the other of the two planar members.

Optionally, the substrate is clamped between corresponding parts of two planar sheets of the film.

In a sixth aspect, the present invention provides a method of manufacturing one or more solar cells performed by a manufacturing system, the method comprising: providing a plurality of substrates, the plurality of substrates including a first substrate adhered to a film (eg, an adhesive film), wherein a film opening in the film exposes a portion of the first substrate; attaching the film to a movable frame; and transporting the frame in a transport chamber along a transport track.

Optionally, the frame is transported to a first position, and at the first position, opposite surfaces of the first substrate respectively face the first electrode and the second electrode of the front film station, the opposite surfaces include the front surface and a rear surface; wherein the method further includes: moving the first electrode and the second electrode toward the frame to form an enclosed space for accommodating the first substrate; A front film layer is formed on the front surface.

Optionally, the method further comprises: transporting the frame to a second location where opposite surfaces of the first substrate respectively face the first electrode and the second electrode of the back film station; moving the first electrode and the second electrode of the back film station toward the frame to form a closed space for accommodating the first substrate; and forming a back surface on the rear surface of the first substrate. film layer.

Optionally, before forming the front film layer or the back film layer, the method further includes roughening the front side and the back surface of the first substrate.

Optionally, after forming the front film layer and the back film layer, the method further includes forming a front conductive layer on the front film layer; and forming a back conductive layer on the back film layer.

Optionally, before forming the front conductive layer and the rear conductive layer, the first surface and the rear surface of the film are respectively provided with isolation grid devices.

Optionally, at least a portion of the front conductive layer extends over the gap between the first substrate and the second substrate, and the method further comprises removing the portion of the front conductive layer.

Optionally, at least a portion of the back conductive layer extends over a gap between the first substrate and the second substrate, and the method further includes removing the portion of the back conductive layer.

Optionally, parts of the front conductive layer and/or parts of the back conductive layer are removed by removing the isolation grid arrangement from the film.

Optionally, a laser is used to remove portions of the front conductive layer and/or portions of the back conductive layer.

Optionally, after removing the portion of the front conductive layer between the first substrate and the second substrate, and after removing the portion of the back conductive layer between adjacent substrates, the method further includes A through hole penetrating through the film is formed between the substrates.

Optionally, both the first substrate and the second substrate are connected to the membrane, and the method further includes forming electrical conductors in the vias to connect the first surface of the first substrate to The first bus bar is connected to the second bus bar at the second surface of the second substrate.

Optionally, the method further comprises cutting a first portion of the film comprising the first substrate from a second portion of the film attached to the frame.

Optionally, the method further comprises: removing a remaining portion of the membrane coupled to the frame; and reattaching a new membrane to the frame after the remaining portion of the membrane is removed from the frame. The above frame is used for the fabrication of the next solar cell.

In a seventh aspect, the present invention provides a solar cell element including at least one substrate unit, wherein the substrate unit includes a plurality of substrates connected together by an adhesive film, and the plurality of substrates include a first substrate and a second substrate, each The first surface of a substrate has a front film layer, the back of each substrate is provided with a back film layer, the substrate opening exposes at least a part of the substrate, and the adhesive film between adjacent substrates is provided with the adhesive The through hole of the film, the surface of the front film layer is provided with a conductive line, the surface of the back film layer is provided with another conductive line, and the front side of the first substrate is electrically connected to the back side of the second substrate.

Optionally, the front conductive layer is disposed between the front film layer and a conductive line associated with the front film layer; and the rear conductive layer is disposed between the back film layer and another conductive line associated with the back film layer.

Optionally, the thickness of the substrate is between 50 microns and 1.5 mm.

Optionally, the solar cell element further includes a first plastic sealing layer and a second plastic sealing layer.

The fabrication system includes a movable frame for fabricating solar cells and a transport track, wherein the frame includes a frame opening, the frame around the frame opening is configured to couple with a film (e.g., an adhesive film), the film includes a plurality of film openings, each of which The membrane openings are configured to expose a corresponding one of the substrates.

Optionally, the material of the bearing frame includes aluminum alloy, stainless steel, carbon composite material or titanium.

Optionally, the surface of the carrier frame includes a plasma resistant coating.

Optionally, the manufacturing system further includes a detachable mechanism configured to detachably connect the frame with the first isolation grid arrangement on one side of the membrane.

Optionally, the detachable mechanism is further configured to detachably connect the frame with a second spacer grid arrangement on another opposite side of the membrane.

Optionally, the manufacturing system further includes a transport track.

Optionally, the transport track includes pulleys, conveyor belts or magnetic levitation mechanisms.

Optionally, the manufacturing system further includes a vertical holding mechanism for vertically holding the frame.

Optionally, the top of the vertical retention mechanism includes a magnet.

Optionally, the vertical holding mechanism at the top of the movable frame has a first magnet, and a concave magnetic shield is provided on the inner wall of the top of the transport chamber, and the concave shape faces the movable frame, the top of the movable frame can be transferred in the groove, and a second magnet is arranged on the inner wall opposite to the groove, the second magnet is opposite to the first magnet, and the opposite The second magnet is opposite to the first magnet, and a gap is formed between the top of the movable frame and the bottom of the groove.

Solar cells include multiple substrates joined together by thin films (e.g., adhesive films), so that multiple substrates can be formed and/or processed together at one time without strictly controlling the shape and location of conductive lines on each substrate, and can The electrical connection between the front side of one substrate and the second surface of an adjacent substrate is better achieved.

Other features will be described in the detailed description.

The technical solutions in the embodiments of the present invention will be described below with reference to the drawings in the embodiments of the present invention. Wherein, in the description of the embodiments of the present invention, the terms used in the following embodiments are only for the purpose of describing specific embodiments, and are not intended to limit the application. As used in the specification of this application and the appended patent claims, the singular expressions "a", "said", "above", "the" and "this" are intended to also include, for example, "a or more" unless the context clearly indicates otherwise. It should also be understood that in the following embodiments of the present application, "at least one" and "one or more" refer to one or more than two (including two). The term "and/or" is used to describe the association relationship between associated objects, which means that there can be three kinds of relationships; for example, A and/or B can mean: A exists alone, A and B exist at the same time, and B exists alone, where A and B may be singular or plural. The character "/" generally indicates that the contextual objects are an "or" relationship.

Various exemplary embodiments and details where relevant are described below with reference to the accompanying drawings. It should be noted that the figures may or may not be drawn to scale and that elements of similar structure or function are represented by the same reference numerals throughout the figures. It should also be noted that the figures are only intended to facilitate the description of the embodiments. They are not intended as an exhaustive description of the invention or as a limitation to the scope of the invention. In addition, the illustrated embodiments do not necessarily have all the aspects or advantages presented. An aspect or advantage described in connection with a particular embodiment is not necessarily limited to that embodiment and can be practiced in any other embodiment even if not so shown, or if not explicitly described.

According to the technical solution of the present invention, the solar cell manufacturing system and the transport chamber have a longitudinally shaped transport track, and the transport cavity is provided with a first side and a second side located on both sides of the transport track. A membrane (eg, an adhesive membrane) is adhered to the movable frame and has a plurality of membrane windows (aka membrane openings). The frame has a frame opening exposing the membrane and at least a portion of the membrane opening. Each membrane opening is configured to expose a corresponding substrate. The manufacturing system has a front film station for forming a front film layer on a first surface of a substrate, and a back film station for forming a back film layer on a second surface of the substrate. The invention occupies a small area and is beneficial to cost saving.

In order to make the above objects, features and beneficial effects of the present invention more obvious, specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings. Manufacturing systems and methods

FIG. 1A shows a fabrication system 10 for fabricating one or more solar cells. As shown in FIG. 1A, a solar cell manufacturing system 10 is provided for forming one or more heterojunction solar cells, and includes a preparation station 107, a loading station 108, a texturing station 104, two front film stations 102 (respectively with a front plasma enhanced chemical vapor deposition (PECVD) chamber), two back film stations 103 (each with a rear PECVD chamber) and a magnetron sputtering station 106 (with a first magnetron sputter Plating equipment 106a and the second magnetron sputtering equipment 106b). Manufacturing system 10 also includes a slit valve 130 configured to interface between atmospheric pressure and vacuum involved in the different processes performed by manufacturing system 10 .

The preparation station 107, the loading station 108, the texturing station 104, the front film station 102, the back film station 103 and the magnetron sputtering device 106 are configured to cooperate with each other both spatially and temporally. This avoids the need to have separate film guides for spatial and temporal matching between processing stations, and the solar cell manufacturing system is relatively simple and has a small footprint. Also, because the substrate does not need to be moved in and out of any thin film guide machines using a manipulator, the substrate is less prone to particles.

The texturing station 104 is configured to roughen the front and back surfaces of the substrate to form a texture on the front (eg, first surface) and back (eg, second surface) surfaces of the substrate (also referred to as the substrate) . The front thin film station 102 is configured to form a front thin film layer on the front surface of the substrate, wherein the front thin film layer includes a front intrinsic layer and a front doping layer on the front intrinsic layer. The back film station 103 is configured to form a back film layer on the back surface of the substrate (also known as base), wherein the back film layer includes a back intrinsic layer and a post doping layer on the back intrinsic layer. The magnetron sputtering station 106 is configured to form a front conductive layer and a rear conductive layer on the front side and the back side of a substrate (aka base), respectively. In some embodiments, each conductive layer may be an indium tin oxide (ITO) layer. In other embodiments, each conductive layer may be made of other materials.

As shown in Figure 1A, after the front film station 102 and the back film station 103, the manufacturing system 10 of the solar cell also includes a buffer chamber 110 and a magnetron sputtering station 106, after the buffer chamber 110, in the magnetron sputtering station 106 The pressure at can be different from the pressure in the cavity of the front film station 102 or the pressure in the cavity of the back film station 103. The buffer chamber 110 is configured such that the pressure in the buffer chamber 110 can reach the pressure in the magnetron sputtering station 106 .

The material of the front intrinsic layer and the rear intrinsic layer includes amorphous silicon (A-SI:H). In some cases, each of the pre-intrinsic and post-intrinsic layers may comprise one or more (e.g., 2, 3, etc.) layers of amorphous silicon: the material of the pre-doped layer may be amorphous silicon or stacked layer Microcrystalline silicon, or both, are doped with N-type ions. The material of the post-doping layer is amorphous silicon doped with P-type ions. In some cases, the pre-doped intrinsic layer may be a phosphorus-doped intrinsic layer and the post-doped intrinsic layer may be a boron-doped intrinsic layer. In this case, phosphorus may be used to form the N layer, and boron may be used to form the P layer. The material of the front conductive layer and the rear conductive layer is transparent conductive oxide. In other embodiments, other materials may be used for the different layers.

In some cases, the N and P layers can be made of microcrystalline silicon. In addition, in some embodiments, any one of the I layer, the N layer, and the P layer, any multiple layers or all layers can be composed of multiple deposition layers of similar materials deposited under different processing conditions to improve the conversion efficiency of solar cells .

The solar cell manufacturing system 10 also includes a transfer path 100 . In some cases, transfer path 100 may include tracks, guides, transfer surfaces, etc. that extend along one or more transfer lumens that provide a vacuum environment. An elongated track L is arranged in the transfer cavity 1014 . The elongated rail L is configured to allow the frame 101 to move therealong, thereby placing the frame 101 at different processing stations for processing the substrates carried by the frame 101 .

As shown in Figure IB, during use, a frame 101 is provided with a frame opening (item 170). Membrane 120 with membrane openings is then coupled to frame 101 (item 171). When the membrane 120 is coupled to the frame 101, the membrane 120 covers at least a portion of the frame opening, thereby allowing the frame opening to expose the membrane 120 and the membrane opening. Next, a plurality of substrates 20 (also referred to as substrates) are coupled to the membrane 120 such that the substrates respectively cover the membrane openings (item 172). In other embodiments, the substrate may be coupled to the membrane 120 first, and then the membrane 120 may be coupled to the frame 101 . When the membrane 120 is coupled to the frame 101, the membrane 120 is under tension (eg, in at least two orthogonal directions).

Next, frame 101 with film 120 and substrate 20 is inserted into preparation station 107 (item 174). Manufacturing system 10 then sequentially transports frame 101 (together with film 120 and substrate 20 ) to different stations to place solar cell components onto the substrate (item 176 ). The processing of the substrate 20 in item 176 by the manufacturing system 10 will be described in detail with reference to FIG. 1A . The processed substrates (modules) are then provided to storage station 112 (item 178), as shown in Figure IB.

Next, the processed substrate is retrieved from storage station 112 (item 180). In some embodiments, interconnect holes are then punched through the film 120 at locations between the processed substrates. Furthermore, in some embodiments, if an isolation grid arrangement is provided to isolate processed substrates (aka substrates) or groups of substrates from each other during processing by the manufacturing system 10, the isolation grid arrangement may also be removed during item 180. remove. The isolation grid arrangement may be configured to be disposed on the membrane 120 at locations between processed substrates. Therefore, when a layer is formed on a substrate by the manufacturing system 10, a part of the layer may be formed on the surface of the substrate, extend to the isolation barrier device provided between the substrate and the adjacent substrate, and extend to the surface of the adjacent substrate. On the surface. When the isolation grid arrangement is later removed, a portion of the layer located on the isolation grid arrangement will also be correspondingly removed, thereby dissolving the formed layer into individual layer portions of the respective substrates. Removal of the isolation grid arrangement will also expose the membrane 120 at locations between the processed substrates, allowing the membrane 120 at these locations to be perforated to achieve interconnect holes.

Next, electrical conductors (conductive lines such as bus bars) are then disposed on the processed substrate (item 181). In the illustrated embodiment, bus bars and cell connections are formed on the processed substrate. In some embodiments, the bus bars may be formed using printing techniques. Additionally, in some embodiments, a set of front bus bars may be formed on the front surface of each processed substrate (aka substrate), and a set of rear bus bars may be formed on the back of each processed substrate (aka substrate). On the surface. Bus bars are formed to connect the ITO surface at the processed substrate, and in the final product, these bus bars are configured to collect electrons from the ITO surface. In some embodiments, the bus bars may be made from silver or silver-coated copper wires or bars. In another embodiment, the bus bars may be made of plated copper. In other embodiments, the bus bars may be made of other materials. In item 181, electrical conductors may also be formed in the interconnect holes described with reference to item 180, thereby connecting the front bus bar of a substrate to the rear bus bar of an adjacent substrate (as shown in FIG. 17, which will be described further below. A detailed description).

Next, the processed substrate (module) is removed from frame 101 (item 182). In some embodiments, removal of the module from the frame 101 may be accomplished by cutting the membrane 120 such that a first portion of the membrane 120 to which the module is attached may be removed from the frame 101 while leaving the membrane coupled to the frame 101 The second part of 120 (item 190). The second portion of film 120 is removable from frame 101 to allow frame 101 to be reused (for another film and other substrate) (item 170).

Next, the die set attached to the cut-off film 120 is placed in an oven and heat-treated (item 183). This heat treatment is to harden the silver paste (in item 181) which can be used to form bus bars. In some cases, solvent can be added to make the silver pliable for bus bar formation (eg, via screen printing), and the heat applied is used to evaporate the solvent. In some cases, there may be multiple frames 101 with multiple corresponding films 120 for processing by manufacturing system 10 . In this case, multiple severing films 120 (with corresponding die sets) may be heat treated together.

Next, the heat-treated die sets (coupled to respective severing films 120) are connected to each other to form a component (item 184). For example, a first set of dies on a first cut-off film 120 may be connected to a second set of dies on a second cut-off film 120 . In some embodiments, the outer portion of the second severing film 120 may overlap the outer portion of the first severing film 120 to form an electrical connection between the first group of modules and the second group of modules (as shown in FIG. 15B and Figure 15C, which will be described in further detail). This overlapping technique allows the top bus bar at the top surface of one module to be electrically connected to the bottom bus bar at the bottom surface of an adjacent module via the overlap region.

Next, a polymer layer (e.g., an ethylene vinyl acetate copolymer (EVA) layer) is then disposed on the opposite side of the element, and glass is disposed on the opposite side comprising the polymer layer and the assembly, A finished solar panel assembly is thus formed (item 186). The completed solar panel elements are then connected to the junction box (item 187). The junction box is configured to collect and output direct current (DC) voltage across the solar panel elements. The solar cells in the solar panel element are connected in series along a first direction of the solar panel element. Horizontal bus bars collect the outputs of the corresponding columns and form counterweight connections. The DC voltage supplied by both sides of the solar cells in the solar panel elements is collected at the junction box by parallel and series connections.

In some embodiments, a feature described with reference to item 170, item 171, item 172, item 180, item 181, item 182, item 183, item 184, item 186, item 187, or any combination of the foregoing may be performed automatically by the processing station , the processing station may be considered as part of the manufacturing system 10 . For example, manufacturing system 10 may optionally include: a frame handling station for providing frame 101 (described with reference to item 170); a film mounting station configured to couple film 120 to frame 101 (described with reference to item 171); a substrate An installation station configured to couple the substrate to the membrane 120 (described with reference to item 172), an isolation grid removal station configured to remove one or more isolation grid devices from the frame 101 and/or from the membrane 120 (described with reference to item 180), a hole punching (or punching) station configured to form through-holes (described with reference to item 180) in the film 120, a bus bar printing station configured to form bus bars on the opposite side of the substrate , and a bus bar connection station configured to form electrical conductors to connect a bus bar from one side of a substrate to a bus bar from an opposite side of an adjacent substrate (described with reference to item 181), a trimming station configured to remove A portion of a film 120 comprising a processed substrate (described with reference to item 182), a heating station (described with reference to item 183) for thermally treating the processed substrate 20, configured to connect a plurality of processed substrates (substrates) 20 to form an assembly station of the element (described with reference to item 184), configured to provide a polymer layer and a glass (described with reference to item 186) on opposite sides of the element, and an encapsulation station configured to remove the film 120 from the frame 101 Film removal stations for the remainder (described with reference to items 170, 190), or any combination of the foregoing.

In some embodiments, any of the processing stations described herein may include mechanical components, electrical components, electromechanical components, or any combination thereof configured to provide the features described herein. Additionally, in some embodiments, any of the processing stations described herein may optionally include control elements, feedback elements (eg, one or more sensors), or any other mechanical and/or electrical elements.

The processing of the substrate in item 176 by fabrication system 10 will now be described with reference to FIG. 1A . First, the frame 101 carrying the substrate 20 is transferred from the preparation chamber 107 to a loading station (LL) 108 configured to transfer the substrate 20 from an atmospheric environment to a vacuum environment. The frame 101 carrying the substrate 20 is transferred from the loading station 108 to the texturing station 104 . The texturing station 104 includes a front texturing station 104a and a rear texturing station 104b. In some embodiments, each of texturing station 104a/texturing station 104b may be an inductively coupled plasma etching device. In other embodiments, each of texturing station 104a/texturing station 104b may be a capacitively coupled plasma etching device. Furthermore, in some embodiments, each texturing station 104a/104b may include a cavity in which roughening may be performed on the substrate 20 . The roughening process performed by the texturing station 104 is to roughen the opposing surface of each substrate 20 to reduce the reflection of the surface of the substrate 20 so that more photons can be absorbed by the substrate 20 .

In the example shown, the surface of the substrate 20 is roughened by dry etching in the texturing station 104 so that the degree of roughening is relatively easy to control and the texture is not too deep. Therefore, the substrate 20 does not need to be thick (compared to wet etching techniques). In other words, due to the dry etching technique, the substrate 20 having a thinner thickness can be used to form solar cells. Since the thickness of the substrate is relatively thin, the cost of the substrate is reduced. In this embodiment, the thickness of the substrate (aka base) can be anywhere from 50 microns to 180 microns. In some embodiments, dry etching may be achieved using reactive ion etching (RIE).

It is advantageous to use dry etching in the same vacuum environment prior to PECVD deposition. This is because there is no oxidation of the silicon surface and thus covering the exposed silicon surface may not be as urgent as in the current processing sequence. In the current process sequence, the silicon surface after the wet etch has a waiting time requirement to complete the PECVD deposition on the bare silicon surface to prevent oxidation.

In the example shown, after the substrate 20 carried by the frame 101 is processed by the texturing station 104, the frame 101 carrying the substrate 20 is conveyed into the preheating station 109 before entering the front film station 102, because the The temperature is different from the temperature in the texturing station 104 , and the preheating station 109 is configured to preheat the substrate 20 to a specific temperature before being processed by the pre-filming station 102 . By way of non-limiting example, preheat station 109 may be configured to preheat substrate 20 to a temperature above 100 degrees Celsius, above 150 degrees Celsius, etc. FIG. During processing by the pre-film station 102, the temperature may reach above the preheat temperature.

Front film station 102 (e.g., leftmost front film station 102 in FIG. The film station 103 )) on the left is configured to place the I-layer beyond (or onto) the backside of the substrate 20 . Furthermore, the front film station 102 is configured to provide an N layer on the front surface of the substrate 20 , and the back film station 103 is configured to provide a P layer on the second surface of the substrate 20 . In some cases, each of front film station 102 and back film station 103 may be configured to perform PECVD to create I-layers, N-layers, and P-layers onto substrate 20, respectively. In one implementation, PECVD deposition can be performed to form the I, N, and P layers. By orienting the substrate 20 vertically, separate stations can sequentially deposit the respective materials onto opposite surfaces of the substrate 20 from opposite sides of the transport path 100, which is advantageous because it prevents one side of the substrate from being doped with chemicals contaminate the other side of the substrate.

In other embodiments, two front film stations 102 may be configured to process the front surface (aka first surface) of the substrate, and then two back film stations 103 then process the back surface (aka second surface) of the substrate . For example, the front thin film station 102 may form an I layer on the front surface of the substrate 20 , and then the front thin film station 102 may form an N layer on the front surface of the substrate 20 . Next, the back film station 103 may form an I layer on the rear surface of the substrate 20 , and then the back film station 103 may form a P layer on the rear surface of the substrate 20 .

In some embodiments, the front thin film station 102 may have two substations for forming the first I layer and N layer, respectively. In this case, Manchester system 10 may not include front film station 102 . In addition, the back film station 103 may have two sub-stations for forming the second I layer and P layer, respectively. In this case, manufacturing system 10 may not include back film station 103 . Furthermore, in some embodiments, substations may be arranged to form the first I-level first, then the second I-level, followed by the N- and P-levels. In other embodiments, the substations may be arranged to form layers in other orders. For example, in other embodiments, substations may be arranged to first form the first I layer, then the N layer, followed by the second I layer, and then the P layer. In other embodiments, fabrication system 10 may include additional thin film stations or substations to form additional layers on the front surface of substrate 20 and/or additional layers on the rear surface of substrate 20 .

In the illustrated embodiment, the frame 101 carrying the substrate 20 enters the front film station 102 first and then the back film station 103, in other embodiments the frame 101 enters the back film station 103 first and then the front film station 102.

As shown in Figure 1A, after being processed by the front film station 102 and the back film station 103, the substrate 20 carried by the frame 101 is transported to the buffer chamber 110 before being processed by the magnetron sputtering station 106, and the magnetron sputtering station 106 The pressure in the chamber may be different from the pressure in the cavity of the front film station 102 or the pressure in the cavity of the back film station 103. The buffer chamber 110 is configured to bring the pressure in the buffer chamber 110 to the pressure in the magnetron sputtering station 106 and/or to heat the substrate 20 . For example, in some embodiments, buffer chamber 110 may provide a buffer for the differential pressure between PECVD processing and PVD processing. Alternatively or additionally, the buffer chamber 110 may include a substrate heating mechanism configured to heat the substrate to maintain the substrate 20 at a specific temperature in the buffer chamber 110 . In some cases, the heating mechanism may be configured to maintain the temperature in buffer cavity 110 at 100c, which is lower than the temperature associated with PECVD processing (eg, anywhere from 200°C to 250°C).

The magnetron sputtering station 106 includes a first magnetron sputtering device 106a and a second magnetron sputtering device 106b. The first magnetron sputtering device 106a is configured to deposit material onto the first surface of the respective processed substrate 20 to create a first conductive layer (eg, a front conductive layer or a back conductive layer). Similarly, the second magnetron sputtering device 106b is configured to deposit material onto the second surface (opposite the corresponding first surface) of the respective processed substrate 20 to create a second conductive layer (e.g., a front conductive layer or rear conductive layer). In some cases, each of first magnetron sputtering apparatus 106a and second magnetron sputtering apparatus 106b may be configured to perform physical vapor deposition (PVD) to produce a conductive layer. In some embodiments, each conductive layer may be an ITO layer/film. The ITO layer includes indium, tin, and oxygen, and can be optically transparent.

With continued reference to FIG. 1A , after being processed by the magnetron sputtering station 106 , the frame 101 carrying the substrate 20 is then transported to an unload chamber 111 to transfer the substrate from a vacuum environment to an atmospheric environment. The frame 101 is then transported from the unload chamber 111 to a storage station 112 which stores the frame 101 together with the processed substrates 20 .

When the frame 101 carrying the substrate 20 is transported along the transport path 100, the frame 101 is vertically oriented (e.g., the normal to the plane of the frame 101/substrate is approximately parallel to the floor, where approximately parallel means 0° plus/minus 10° angle). Thus, substrate 20 is processed by texturing station 104 , front film station 102 , back film station 103 and sputtering station 106 when substrate 20 is vertically oriented. This feature is advantageous because it allows the transfer path 100 to occupy a smaller area (compared to a level system where substrates are processed level). Furthermore, orienting the substrate vertically allows the texturing station 104 to perform the roughening process on the opposite surface of the substrate without resorting to a turning tool (which takes up a large area and thus incurs relatively high cost) to achieve the treatment of the different surfaces . It should be noted that, in this embodiment, in addition to using the transport path 100 , the frame 101 can also be transported by using a slit valve located in the chamber of the processing station. Among other things, slit valves can separate different chambers of different processing stations.

In manufacturing system 10, processing of substrate 20 does not require flipping the substrate. This is because substrate 20 is vertically oriented when processed by manufacturing system 10 . In particular, manufacturing system 10 has various processing stations arranged on opposite sides of transport path 100 , which allows two opposing surfaces of vertically oriented substrate 20 to be processed from opposite sides of transport path 100 . Therefore, there is no need to flip the substrate 20 during the manufacturing process. Substrate Carrier Frame

Figure 2 shows the frame 101 in more detail. As shown in FIG. 2, the frame 101 includes a peripheral portion 1010 defining a frame opening 1011 and a transfer rail 1012 for enabling the frame 1010 to move along a predetermined rail. By way of non-limiting example, transfer track 1012 may be one or more wheels, one or more rollers, one or more bearings, one or more gliders, one or more mechanical interface, etc.

In some embodiments, the transport rail 1012 may be arranged at the bottom of the frame 101 . In other embodiments, the transport rail 1012 may be arranged at one side of the frame 101 or at the top of the frame 101 . In other embodiments, the transport track 1012 may also be provided at other locations.

By way of non-limiting example, the material of frame 101 may include aluminum alloys, stainless steel, carbon composites, titanium, polymers, or any other metal or alloy. The surface of the frame 1010 may be coated with a plasma-resistant coating, and the plasma-resistant coating protects the bearing frame 1010 from plasma corrosion.

Referring to FIG. 3 , the transport track 1012 enables the frame 101 to be transported along the transport path 100 so that the frame 101 (with the film 120 and the substrate 20 ) can be placed in different stations of the manufacturing system 10, as shown in FIG. 2 , having a carrier function The frame 101 is transported along the transport path 100 in a vertical direction. Since the substrate 20 and the film 120 are coupled to the frame 101 (with the major surfaces of the substrate 20 and the film 120 parallel to the plane of the frame 101), the substrate 20 is also has a vertical orientation. This configuration is advantageous because the footprint of the frame 101 is small. In particular, the footprint occupied by a vertically oriented frame 101 is approximately L times t, where L is the length of the frame 101 and t is the thickness of the frame 101 . If the frame 101 is oriented horizontally, then the planar area occupied in the frame 101 (in this case the occupied area would be L times L). Thus, the transport tracks in the manufacturing system 10 occupy less area (compared to a horizontal system that handles substrates horizontally) and reduce manufacturing costs.

In some embodiments, transfer path 100 may include pulleys configured to be detachably and mechanically coupled to transfer track 1012 . In other embodiments, transport path 100 may include a conveyor belt or magnetic suspension mechanism configured to interface with transport track 1012 . In other embodiments, transfer path 100 may simply provide a surface for allowing transfer rail 1012 to move thereon. Furthermore, in some embodiments, transport path 100 may include tracks, and transport track 1012 and tracks may be implemented using a tongue and groove mechanism or any mechanical coupling that allows frame 101 to be movably and detachably coupled to the track.

As shown in FIGS. 2-4 , the frame 101 also includes a vertical holding mechanism 1013 for keeping the frame 101 vertical while substrates coupled to the frame 101 are being processed by the manufacturing system 10 . Vertical retention mechanism 1013 is configured to interface with channel 402 of rail 404 coupled to top rail 118 ( FIG. 4 ). In particular, channel 402 is configured to receive vertical retention mechanism 1013 such that frame 101 can slide relative to track 404 and remain in a vertical orientation.

In the illustrated embodiment, vertical retention mechanism 1013 includes a magnet (referred to herein as a "first magnet"). As shown in FIG. 4 (FIG. 4 is a side view of FIG. 3), the first magnet of the vertical holding mechanism 1013 has an N pole and an S pole. The track 404 is provided with a magnetic shield 150 having a concave or c-shaped cross-sectional shape. The track 404 also has a second magnet 151 and a third magnet 152. The second magnet 151 has an N pole facing the vertical holding mechanism 1013, and the third magnet 152 has an S pole facing the vertical holding mechanism 1013. During processing of the substrate 20, the frame 101 (and substrate) are held upright by repulsion between the first and second magnets 151 of the vertical holding mechanism 1013, the top of which is spaced from the inner surface of the track 404, The top of the vertical holding mechanism 1013 is kept out of contact with the inner surface of the rail 404 . The opposite side of the vertical retention mechanism 1013 is also spaced from the inside surface of the track 404 due to the opposite poles of the docking magnets. Therefore, the movement of the frame 101 relative to the track 404 does not generate any particles and contamination problems are avoided.

In other embodiments, the vertical holding mechanism 1013 at the top of the frame 101 can also be a transmission track or a restraint mechanism, that is, the vertical holding mechanism 1013 at the top of the frame 101 is not provided with a magnet, but a transmission track or a restraint mechanism similar to the transmission track 1012 , to avoid magnets affecting plasma deposition.

In the illustrated embodiment, the vertical holding mechanism 1013 is arranged on top of the frame 101 . In other embodiments, the vertical holding mechanism 1013 can also be disposed at other locations, such as at the bottom of the frame 101 , at the side of the frame 101 , and so on.

In other embodiments, frame 101 does not include transport track 1012 . For example, in some embodiments, transport path 100 may include transport tracks 1012 , such as one or more wheels, one or more rollers, etc., that mechanically support frame 101 and allow frame 101 to move along transport path 100 . In other embodiments, the bottom of frame 101 may not be in contact with any rails, and no rails may be required. In such cases, the top rail 118 may include mechanical components configured to removably couple to the frame 101 while keeping the frame 101 vertical and supporting the weight of the frame 101 .

FIG. 5 shows an example of a membrane (e.g., an adhesive membrane) 120 configured to be coupled to the frame 101 of FIG. . The frame opening 1011 of the frame 101 exposes the membrane 120 and also exposes the membrane opening 1201 . The frame opening 1011 and the membrane opening 1201 also cooperate with each other to expose the substrate coupled to the corresponding membrane opening 1201 during the manufacturing process.

The material of the membrane 120 may be made of a material that is resistant to high temperatures and/or large temperature changes without significant deformation, and is chemically resistant to plasmonic reactions. In this manner, thin film 120 may be able to withstand high temperatures while being processed by manufacturing system 10 . In some cases, the temperature in one or more stations of manufacturing system 10 is not higher than 250 degrees Celsius, and film 120 is not easily deformed at such temperatures. Furthermore, in some cases, the adhesion effect of substrate 20 on thin film 120 is not adversely affected by the high temperatures reached during the manufacturing process performed by manufacturing system 10 . In some embodiments, a silicone-based adhesive or any other adhesive capable of withstanding high temperatures (e.g., above 150 degrees Celsius, such as 200-250 degrees Celsius, above 250 degrees Celsius, etc.), can be used to attach the substrate 20 is attached to the film 120. In some embodiments, the material of the film 120 may be polyimide, polyester polypropylene, or the like. In some embodiments, the thin film 120 may be made of a material capable of withstanding the heat involved during the plasma process to form a layer on the substrate. In some embodiments, film 120 will become a component of a solar cell module after the manufacturing process is complete. In this case, the membrane 120 can be made of a transparent or translucent material that is part of the solar cell module and is assembled as part of the future light tunnel.

In the example shown, each membrane opening 1201 has a major area configured to expose the respective substrate 20 to be attached to the membrane 120, which is advantageous because it allows the membrane opening 1201 to expose two opposing surfaces of the substrate 20. Most of the surface area in . Thus, when the substrate 20 is being carried by the frame 101 and the film 120 , the fabrication system 10 can form the layers of the solar cell module on opposite sides of the substrate 20 .

In the example of FIG. 5 , the membrane 120 has 36 membrane openings 1201 . One possible way is to cut the film to form the film opening as shown in Figure 5; another possible way is to form the film opening by adhering the strip-shaped film horizontally and vertically on the frame. In other examples, membrane 120 may have other numbers of membrane openings 1201 . For example, in other examples, the membrane 120 may have less than 36 membrane openings 1201 , such as two rows of six membrane openings (ie, 12 membrane openings), one membrane opening, and the like. In other examples, membrane 120 may have more than 36 membrane openings 1201 .

It should be noted that the frame 101 is not limited to carrying one membrane 120 . Frame 101 may be configured to be coupled to one membrane 120 (FIG. 6A) or multiple membranes 120 (FIGS. 6B-6C). Figure 6B shows frame 101 carrying three membranes 120, each membrane 120 having 12 substrates 20 coupled thereto. Figure 6C shows frame 101 carrying six membranes 120, each membrane 120 having six substrates 20 coupled thereto. Frame 101 may carry other numbers of membranes 120 . Additionally, each film 120 may carry other numbers of substrates 20 .

FIG. 6D shows a method of coupling substrate 20 to membrane 120 . As shown in the top view, the membrane 120 has membrane openings 1201 . Each membrane opening 120 has a size (area) whose total area is smaller than the total area of the corresponding substrate 20 in the example shown, and the membrane opening 120 has a cross-sectional dimension smaller than the substrate 20's cross-sectional dimension, which allows the substrate 20 to be within the substrate 20. Overlap the membrane 120 by 1 mm at each of the two opposite sides. Next, referring to the middle view of FIG. 6D , an adhesive is applied to the portion of the membrane 120 surrounding the membrane opening 1201 . In some cases, the application of adhesive may be performed by an adhesive device (eg, an automated dispensing dispenser), and the adhesive device may be part of manufacturing system 10 . Next, referring to the lower figure of FIG. 6D , the substrate 20 is coupled to the film 120 through an adhesive to form a substrate strip (or substrate strip). When the substrate 20 is coupled to the membrane 120 , the substrate 20 covers the corresponding membrane opening 1201 , and the membrane opening 1201 exposes most of the area of the corresponding substrate 20 .

In other embodiments, the width of the overlap (measured in a direction perpendicular to the perimeter of the membrane opening) between the substrate 20 and the portion of the membrane 120 adjacent to the membrane opening may be different than 1 mm. For example, the overlapping width may be from 0.3 mm to 3 mm, or from 0.4 mm to 2 mm, or from 0.5 mm to 1.5 mm.

As discussed above, membrane 120 may be configured to be coupled to frame 101 . In some cases, membrane 120 may be coupled directly to frame 101 . In some embodiments, the coupling may be accomplished using an adhesive (eg, a silicone-based adhesive). The adhesive may be applied by the manufacturing system 10, or the film 120 may be in contact with the adhesive on its surface (eg, at one or more locations along the outer peripheral portion of the film 120). In other cases, membrane 120 may be indirectly coupled to frame 101 . For example, as shown in FIG. 6E , in some cases, each membrane 120 may be coupled to a subframe 610 , and subframe 610 is coupled to frame 101 .

In some cases, after substrate 20 is mounted to membrane 120 and after membrane 120 is coupled to frame 101 , an isolation grid may be coupled to membrane 120 to isolate the substrate or groups of substrates. Referring to FIG. 6F , an example of an isolation grid arrangement 160 is shown having a frame 1601 and grid openings 1602 defined by isolation grids 1603 disposed on the frame 1601 . The isolation grid arrangement 160 is configured for placement 120 above the membrane 120 in a stacked configuration (where the major planes of the isolation grid arrangement 160 are parallel to the major planes of the membrane) such that the isolation grid 1603 is disposed between adjacent substrates 20 Alternatively, the isolation frame device 160 may further include a detachable mechanism for detachably connecting the frame 1601 to the frame 101 and/or to the membrane 120 . Frame 1601 and isolation grid 1603 may be made of metal or alloy such as aluminum alloy. The surfaces of the frame 1601 and the isolation grid 1603 may be coated with a plasma-resistant coating for protecting the surfaces of the frame 1601 and the isolation grid 1603 (eg, preventing the surfaces of the frame 1601 and the isolation grid 1603 from being corroded by plasma).

Although one isolation grid arrangement 160 is shown, there may be two isolation grid arrangements 160 disposed on opposite sides of the membrane 120 during use. Isolation grid arrangement 160 may be coupled to frame 101 and/or membrane 120 .

During the deposition process performed by the manufacturing system 10, a conductive material is deposited over opposing surfaces of the substrate 20 to form a conductive layer on the front/first side of the substrate 20 (the front conductive layer, and the back/second side of the substrate 20 upper back conductive layer). For example, the front conductive layer may comprise a conductive material extending across the front surface of the first substrate, across the region between the first substrate and the adjacent (second base) and across the front surface of the second substrate. Isolation grid arrangement 160 prevents deposition of conductive material onto opposing surfaces of thin film 120 at locations between substrates 20 because these locations are covered by isolation grid 1603 of isolation grid arrangement 160 . After forming the conductive layer on the opposite surface of the substrate 20, the isolation grid arrangement 160 on the opposite side of the membrane 120 may then be removed.

When the isolation grid 1603 is subsequently removed, the deposited conductive material on the isolation grid 1603 on the opposite side of the thin film 120 between adjacent processed substrates is also removed along with the isolation grid 1603 . As a result, the conductive layers on both sides of the processed substrate are broken down into individual smaller conductive layers of the respective processed substrates. Therefore, the initial electrical connection provided by the front conductive layer between the substrates 20 is disconnected, and the initial electrical connection provided by the rear conductive layer between the substrates 20 is also disconnected. The substrate 20 can then be electrically connected in different ways, for example, the front bus bars formed on the front conductive layer of the first processed substrate (first substrate) can be electrically connected to the conductive layer formed on the first processed substrate (first substrate). ) rear bus bar on the back conductive layer of the adjacent second processed substrate (second substrate). In some cases, the material of the isolation grid 1603 may be a conductive material such that the plasma utilized during the fabrication method may be continuously directed. This facilitates continuous deposition on the surface of the substrate to form a conductive layer with a desired thickness. The isolation grid arrangement 160 may also account for achieving a uniform thickness of the conductive layer formed on each substrate.

It should be noted that isolation grid arrangement 160 is not limited to the configuration shown, and that in other embodiments isolation grid arrangement 160 may have other configurations. For example, in other embodiments, isolation grid arrangement 160 may be configured as one or more (sized and/or shaped) tapes for placement between adjacent substrates 20 . During use, the magnetic tape is placed on the membrane 120 between the substrates 20 . It may be that a first tape is placed on a first surface of the film 120 and a second tape is placed on a second surface (opposite the first surface) of the film 120 . The tape prevents deposition of conductive material onto the opposing surfaces of the film 120 between the substrates 20 . After forming the conductive layers on the opposing surfaces of the substrate 20, the tape is removed to break up the conductive layers on each side into separate smaller conductive layers for the respective processed substrate 20.

In some cases, FIG. 6H illustrates a method of coupling substrate 20 to membrane 120 . As shown in (a) in Fig. 6H, a frame 101 is prepared. Next, as shown in (b) of FIG. 6H , the first thin film 120a is coupled to the upper and lower edges of the frame 101 . It can be seen from the figure that the first thin film 120a is strip-shaped. Then, referring to (c) shown in Fig. 6H, the second film 120b is vertically coupled at the opening of the frame 101, and it can be seen from the figure that the second film 120b is strip-shaped and intersects with the first film 120a at 90° . In this way, a film opening is formed through the first film 120a and the second film 120b. It can be seen from the figure that the second thin films 120b are evenly distributed, so that the formed thin film openings 1201 have equal sizes. As shown in (d) of FIG. 6H , an adhesive is applied to the film opening 1201 formed by the film 120 , and the substrate 20 is coupled to the film 120 through the adhesive to form a substrate strip (or substrate strip). When the substrate 20 is coupled to the membrane 120 , the substrate 20 covers the corresponding membrane opening 1201 , and the substrate 20 covers the area exposed by the membrane opening 1201 . Compared with the method shown in FIG. 6D above, the method of coupling the substrate to the film shown in FIG. 6H avoids cutting the film to form a film opening, so it can save more film materials and help reduce production costs.

In some cases, two isolation grids 160 are provided for two opposing sides of the frame 120 to isolate the substrate 20 prior to placing the frame 120 within the preparation station 107 . Specifically, the first isolation grid arrangement 160 is disposed on the first surface of the membrane 120 to isolate the substrate 20 coupled to the first surface of the membrane 120, and the second isolation grid arrangement 160 is disposed on the second surface (with the first surface opposite) to isolate the space behind the respective wafers 20. The frame 120 is then transferred together with the two isolation grids 160 to different stations of the manufacturing system 10 for processing the substrates. After the substrates have been processed, the processed substrates are output to the storage station 112 together with the frame 120 and the isolation grid 160 .

In some embodiments, frame 101 optionally includes one or more mechanical connectors configured to couple to one or more isolation grid devices 160 . In some non-limiting examples, the mechanical connectors may be screws, clamps, snap-fit connectors, friction couplers, clips, and the like.

In other cases, the frame 120 carrying the substrate 20 without carrying the isolation grid arrangement 160 may be inserted into the preparation station 107 . In this case, the manufacturing system 10 may provide the carrier isolation grid arrangement 160 after the frame 120 has been inserted into the preparation station 107 . For example, one or more isolation grid assemblies 160 may be provided before/in/after the front film station 102, before/in/after the back film station 103, in the buffer station 110, or in the magnetron sputtering Station 106 is coupled to frame 101 . After the magnetron sputtering station 106 has formed the front and rear conductive layers on the respective front and rear surfaces of the processed substrate, the isolation grid arrangement (S) 160 may then be separated from the frame 101 . Removal of the isolation grid arrangement 160 from the frame 101 decomposes the front conductive layer into separate smaller front conductive layers for the respective substrates, and also decomposes the back conductive layer into separate smaller back conductive layers for the respective substrates, as similar to that discussed.

In other embodiments, isolation grid arrangement 160 is optional and fabrication system 10 is not required to process substrate 20 . If the isolation grid arrangement 160 is not arranged between the substrates 20 , the front and rear conductive layers will extend over the area between adjacent substrates 20 . In this case, the front conductive layer can be broken down into individual smaller front conductive layers for the respective substrate 20 using laser equipment. Similarly, a laser device or a separate laser device may also be used to decompose the back conductive layer into separate smaller back conductive layers for respective substrates 20 . By controlling the energy of the laser, the removal depth can be well controlled, so that the front conductive layer and the rear conductive layer between adjacent substrates 20 can be removed without damaging the thin film 120 .

As previously discussed, an adhesive may be applied to the film 120 when attaching the substrate to the film 120 . In some cases, some of the adhesive may extend to areas on film 120 between the substrates. In this case, the adhesive may be removed from the surface of the thin film 120 of the substrate at this region before the isolation grid arrangement 160 is disposed on the thin film 120 . Such a technique will prevent isolation grid arrangement 160 from sticking to membrane 120 . In an alternative technique, the adhesive is applied only to the areas of the film 120 that are configured to bond the substrates 20 , thereby providing areas of the film 120 between the substrates 20 without adhesive. In another alternative technique, if some of the adhesive extends to an area on the film 120 between the substrates 20, an adhesive tape can be placed over that area to cover the adhesive (where the adhesive side of the tape is in contact with the film 120 Adhesive contact on the surface). In other embodiments, another film may be placed over the area to cover the adhesive. In one embodiment, the substrate 20 may be coupled to the first film 120a, and the second film 120b may be adhered to the first film 120a to cover the area between the substrates 20, which may contain an adhesive. The first film 120a may have a plurality of film openings, and the second film 120b may also have a plurality of film openings respectively corresponding to the film openings of the first film 120a. The membrane opening of the second membrane 120b may be sized to accommodate a corresponding substrate 20 coupled to the first membrane 120a. The membrane opening of the first membrane 120a may be smaller in size than the membrane opening of the second membrane 120b because the first membrane 120a needs to provide some area around the membrane opening to allow the substrate 20 to couple to the membrane opening.

It is worth noting that the isolation grid arrangement 160 is not limited to the example of the configuration shown, and the isolation grid arrangement 160 may have other configurations. For example, as shown in FIG. 6G , in other embodiments, isolation grid arrangement 160 may have an isolation grid configured to isolate groups of substrates 20 . film station

As discussed above, film station 102 /film station 103 is configured to place one or more layers on the surface of substrate 20 . The one or more layers (or films) may include I and N layers. In other cases, a layer may include an I layer and a P layer. Figure 7 shows a top view of the film station 102/film station 103, specifically showing the film station 102/film station 103 with a first electrode 102a and a second electrode 102b, the first electrode 102a and the second electrode 102b are in use Figure 8 is a front view of the film station 102/103 of Figure 7; Figure 9 shows a top view of the film station 102/103, particularly showing the The first electrode 102a and the second electrode 102b.

As shown in FIGS. 7 and 8 , the first electrode 102 a and the second electrode 102 b of the film station 102 / 103 are located on opposite sides of the frame 101 . The first electrode 102a and the second electrode 102b may move toward the transport rail 1012 or toward the frame 101 to form a closed space covering the substrate 20 to be processed. The movement of the first electrode 102 a and the second electrode 102 b can be realized by one or more driving devices in the manufacturing system 10 . When the first electrode 102a and the second electrode 102b are in their respective operating positions, an enclosed space covering the substrate 20 is formed, and the first electrode 102a and the second electrode 102b are operated to deposit one or more layers onto the front of the substrate 20. On the surface. The distance between the first electrode 102a and the substrate 20 can be adjusted to meet different processing requirements.

In some embodiments, the first electrode 102a (eg, the showerhead) can move independently relative to the front housing to adjust the process gap. The front housing may be grounded and may be placed in contact with the frame 101 to form a closed loop for the plasma (ground return). The second electrode 102b (e.g., a heater) can be moved to be in close proximity to the membrane 120, but not contact the membrane 120 (e.g., this can be achieved by using ceramic pins to ensure a small but fixed gap in between), preventing the heater from touching frame to avoid heater heating the frame. In some cases, the structure coupled to the second electrode 102b may contact the frame 101 to provide support and seal the frame 101 against the front housing.

As shown in FIG. 1A, the front film station 102 is configured to form a layer on the front surface of a substrate, and the back film station 103 is configured to form a layer on the back surface of the substrate, wherein the frame carrying the substrate 101 is conveyed to different film stations 102/103. Accordingly, the deposition sources associated with the front film station 102 and the back film station 103 are respectively located on opposite sides of the transport path 100, the back film station 103 having the same configuration as the front film station 102 because the front film station 102 and back film station 103 are configured to work on opposite surfaces of the substrate, except that the electrodes 102a/102b of back film station 103 are reversed (compared to the configuration of front film station 102), and the configuration of back film station 103 is the same as that of the front film station 102. The configuration of film station 102 is the same. Thus, when the substrate is being processed (when the backside of the substrate faces the second electrode 102b of the front film station 102), the front side of the substrate faces the first electrode 102a of the front film station 102, and the front side of the substrate faces the first electrode 102a of the front film station 102, and the After 103, the front side of the substrate faces the second electrode 102b of the back film station 103 (the back side of the substrate faces the first electrode 102a of the back film station 103).

In some embodiments, the electrodes 102a/102b of the thin film stations 102/103 may not be configured to deposit thin films. The type of gas charged to the processing station determines the type of film layer deposited. In traditional HIJ type PECVD, I layers are usually deposited on both sides of the substrate before depositing the dopant layer (N or P) in order to passivate the exposed silicon surface in time to prevent the oxidation or contamination of the dopant. However, in this embodiment, the deposition on both sides of the substrate with the I layer can occur in a relatively short period of time (by arranging the I layers sequentially on both sides of the substrate), so that the deposition of the intrinsic layer and the waiting time between the doped layer Time shortens. Another advantage is that if the dry etch texture is done in situ and then deposited by PECVD (without air ingress), there is less chance of oxide formation on the new silicon surface, and thus, more consistent cell performance.

In some embodiments, electrodes 102a/102b of film stations 102/103 may be configured to form a back intrinsic layer (I layer) on the back of substrate 20, and a back doped layer (e.g., N layer) on the back of substrate 20. layer or P layer)). In other embodiments, the thin film station 102/103 may include a back intrinsic station and a back doping station, wherein the back intrinsic station is configured to form a back intrinsic layer (I layer), and the back doping station is configured to A back doped layer (eg, N layer or P layer) is formed on the back surface of the substrate 20 . In this case, the back intrinsic station may have electrodes dedicated to forming the I layer (as shown in FIG. 7 ), and the back doping station may also have electrodes dedicated to forming the doped layer (as shown in FIG. 7 ). Show).

In some cases, the first electrode 102a of the thin film station 102/103 may comprise a gas shower. In one embodiment, only the gas injection head is movable and a bellows is provided on the periphery of the gas injection head to achieve a seal. In another embodiment, the chambers defining the thin film stations 102/103 and the housing of the gas showerhead are independently movable to adjust the process distance (eg, gap).

In the thin film station 102/103 of Figure 7, the gas distribution plate serves as the power supply electrode and the heater serves as the ground electrode, where the heater may be movable or fixed. In some embodiments, thin film stations 102/103 may include PECVD chambers.

As shown in FIG. 9 , when material deposition is not performed, the first electrode 102 a and the second electrode 102 b move away from each other and away from the frame 101 . In this configuration, frame 101 may be transported along transport path 100 to another processing station. The process chamber in Figure 9 includes a central column or support through which the heater base moves. In another embodiment, the chambers defining the thin film stations 102/103 in FIG. 9 and the housing of the gas showerhead can be moved independently to adjust the process distance (eg, gap).

In other embodiments, the thin film station 102/103 can have other configurations. For example, FIG. 10A, FIG. 10B and FIG. A more uniform pressure, allowing the heater to form a gas seal with the upper part of the chamber. In another embodiment, FIGS. 10A, 10B and 10C, the chambers defining the thin film stations 102/103 and the housing of the gas showerhead are independently movable to adjust the process distance (eg, gap). FIG. 10A shows another front film station 102 . The front film station 102 of Figure 10A is similar to the front film station 102 of Figure 7, except that the front film station 102 of Figure 10A also has heaters supported at the four corners of the heater instead of the middle. Supporting the heater at the four corners is advantageous as this allows forces to be applied at the perimeter of the heater. The configuration of the thin film stations 102/103 shown in Figure 10A also allows for the RF return on the grounded portion at the antechamber body and allows for the formation of a semi-seal to contain the reaction in the confined space between the upper and lower electrodes sexual gas. Semi-sealed means that the reactive gas is contained within the chamber, where the pumping port is also inside. External purge gas can be pushed through this volume through some cracks/slots/openings in the frame 101, heater and mechanical ground contacts.

Figure 10B shows two film stations 102/103, each having the configuration shown in Figure 10A. In the illustrated embodiment, each film station is in process mode. When in process mode, the housings of each film station on opposite sides of the substrate 20 are moved towards the frame 101 carrying the substrate 20, one housing with a heater and the other housing with a showerhead. The showerhead is then operated to deposit material onto the substrate 20 .

Figure 10C shows the film station 102/103 of Figure 10B in transfer mode. When in transfer mode, the housing of each film station on the opposite side of the substrate 20 moves away from the frame 101 and carries the substrate 20 . The frame 101 carrying the substrate 20 may then be transported out of the film station.

In some embodiments, the front thin film station 102 can be configured to form the intrinsic layer on a first side of the corresponding substrate, and the thin film station 103 can be configured to form the intrinsic layer on a second side (opposite the corresponding first side) of the corresponding substrate. form the essential layer.

In other embodiments, front thin film station 102 may be configured to form a doped layer (eg, N layer or P layer) on a first side of a corresponding substrate, and thin film station 103 may be configured to form a doped layer on a second side of a corresponding substrate. A doped layer (for example, an N layer or a P layer) is formed on the side (opposite to the corresponding first side). Magnetron sputtering station

As shown in Figure 1A, the magnetron sputtering station 106 comprises a first magnetron sputtering device 106a and a second magnetron sputtering device 106b, wherein the first magnetron sputtering device 106a faces the substrate (base) to be processed The front surface, and the second magnetron sputtering device 106b faces the back surface of the substrate (base) to be processed. Thus, the first magnetron sputtering device 106 a and the second magnetron sputtering device 106 b are located on opposite sides of the transport path 100 . The first magnetron sputtering device 106a is configured to form a first conductive layer on the front surface of the processed substrate, and the second magnetron sputtering device 106b is configured to form a first conductive layer on the back surface of the processed substrate (with the first The second conductive layer is formed on the opposite surface).

FIG. 11 is a schematic structural view of the magnetron sputtering apparatus 106a/106b of FIG. 1A, particularly showing the magnetron sputtering apparatus 106a/106b with the shutter 106c opened. Figure 12 is a schematic diagram of the structure of the magnetron sputtering apparatus 106a/106b, specifically showing that the magnetron sputtering apparatus 106a/106b does not deposit material because the shutter 106c is closed (ie, the physical shield of the shutter 106c prevents the sputtered material from reaching the substrate) . In particular, when the shutter 106c is opened, particles from the first magnetron sputtering device 106a (or the second magnetron sputtering device 106b) can reach the surface of the processed substrate (substrate) (Fig. 11). When the shutter 106c is closed, particles from either the first magnetron sputtering apparatus 106a or the second magnetron sputtering apparatus 106b cannot reach the surface of the processed substrate ( FIG. 12 ).

During use, the frame 101 carrying the substrate 20 (with the intrinsic and doped layers formed thereon) is transported to a first magnetron sputtering apparatus 106a. The shutter 106c of the first magnetron sputtering device 106a is opened to allow particles to be sputtered toward the front surface of the substrate 20, and then a front conductive layer is formed on the front surface of the substrate. The frame 101 carrying the substrate 20 is then transferred to the second magnetron sputtering device 106b. The shutter 106c of the second magnetron sputtering device 106b is opened to allow particles to be sputtered towards the backside of the substrate 20, and then a backside conductive layer is formed on the backside of the substrate.

In other embodiments, instead of forming conductive front conductive layers and rear conductive layers on the front and rear surfaces of the substrate 20, respectively, the magnetron sputtering devices 106a/106b may be arranged opposite to each other, thereby allowing A front conductive layer and a back conductive layer are simultaneously formed on the surface and the rear surface.

In some embodiments, the front conductive layer is formed first, and the back conductive layer is formed. In other embodiments, the back conductive layer is formed first, and the front conductive layer is formed. It should be noted that the terms "front" and "back" are used to refer to two opposite sides of a planar object (eg, substrate, module, etc.). The front conductive layer may be the first conductive layer, and the back conductive layer may be the second conductive layer, or vice versa.

In some embodiments, the front conductive layer provided by the first magnetron sputtering device 106a may be an ITO layer and may have a conductive material connected to a plurality of substrates. In addition, the back conductive layer provided by the second magnetron sputtering device 106b may also be an ITO layer, and may have a conductive material connected to multiple substrates. Because the substrates are connected to the membrane 120, the conductive layers on each side are formed to have a uniform configuration across multiple substrates. Subsequently, the conductive material is decomposed into individual conductive portions of the individual substrates, for example by removal of the separating substrates and/or isolation grid arrangement by laser.

In some embodiments, the front conductive layer may extend to the edge of the front surface of the substrate. Additionally, in some embodiments, the back conductive layer may extend to a location on the back surface of the substrate away from the edge of the second surface of the substrate, resulting in a gap between the end of the back conductive layer and the edge of the second surface of the substrate. . This gap reduces the risk of the front conductive layer (eg, ITO layer) contacting the back conductive layer (eg, ITO layer) to create a short circuit. In some embodiments, the gap between the end of the back conductive layer and the edge of the substrate may be achieved by covering a peripheral portion of the second surface of the substrate. Thus, the back conductive layer extends to the edge of the film opening (which exposes the second surface of the substrate). In other embodiments, the front conductive layer may extend to a location on the front surface of the substrate away from the edge of the substrate, resulting in a gap between the end of the front conductive layer and the edge of the front surface of the substrate. Substrate removal and frame preparation

As discussed with reference to item 182 in FIG. 1B , after the substrates 20 carried by the frame 101 are processed into their respective modules, the modules (which are coupled together by the membrane 120 ) are then removed from the frame 101 . As shown in FIG. 13 , the substrate region in the middle of the thin film 120 is cut. The cutout portion (eg, the first portion) of the film 120 becomes part of the module 30, which also includes the substrate (processed substrate 20). The substrates are joined together by the first (notched) portion of the membrane 120 .

It should be noted that the substrate need not be removed from the cut-out portion of film 120, and that the cut-out portion of film 120 will become part of the solar cell being formed. In particular, modules 30 (including substrates connected by severing film 120) may be connected to other modules 30, and/or may be subjected to plastic encapsulation to form solar cells.

As shown in FIG. 13 , after removing the first portion of the membrane 120 , the remaining (second) portion 40 of the membrane 120 remains attached to the peripheral portion 1010 of the frame 101 . In order to prepare the frame 101 for processing the next set of substrates, the remaining portion 40 of the film 120 is removed. Then, a new thin film 120 is coupled to the frame 101 for the fabrication of the next solar cell. Therefore, frame 101 can be utilized multiple times. This has the benefit of reducing manufacturing costs. Solar battery

Referring to FIG. 14 , to form the solar cell 50 , a first plastic layer 502 and a second plastic layer 503 may be deposited on opposite surfaces of the module 30 . The first plastic layer 502 and the second plastic layer 503 may be plastic sealing layers. In one embodiment, the first plastic layer 502 and the second plastic layer 503 may be corresponding EVA films. The first glass 501 and the second glass 504 may also be placed on opposite sides of the module 30 to form the solar cell 50 .

As discussed above, module 30 includes cut-off film 120 , which becomes part of solar cell 50 . The cut-off film 120 has a plurality of film openings covered by respective substrates (the substrate 20 on which the intrinsic layer and the impurity layer are formed), and the film openings are connected together by the cut-off film 120 .

In some cases, each substrate of module 30 has a first intrinsic layer (I-layer) and an N-layer on a first I-layer, where the first I-layer and N-layer together may be considered the first (or former ) film layer. Each substrate of module 30 also has a second intrinsic layer (I-layer) and a P-layer on top of the second I-layer, where the second I-layer and P-layer together may be considered the second (or back) thin-film layer. In some embodiments, the first I-layer and the second I-layer can be made of amorphous silicon. In addition, in some embodiments, the N layer may be a doped layer, which includes amorphous silicon and/or crystalline silicon doped with N-type ions, and the P layer may be a doped layer, which includes doped P-type ions. Ionic amorphous silicon and/or crystalline silicon.

In some cases, solar cell 50 may be formed by connecting multiple modules 30 together to form an element. FIG. 15A shows a module 30 with a cut-off film 120 and a plurality of substrates 20 (processed substrates with intrinsic and doped layers) connected together by the cut-off film 120 . Bus bars may be formed on opposite sides of the module 30 prior to connecting the module 30 with another module 30 (as similarly discussed with reference to item 181 of FIG. 1B ). In some embodiments, the bus bars are configured to collect and transmit charge from the solar cells. In the example shown, a first set of bus bars is formed on a first surface of the die set 30 , with the bus bars extending parallel and to a first edge of the die set 30 . A second set of bus bars is formed on a second surface (opposite to the first surface) wherein the bus bars extend parallel and to a second edge of the module 30 (opposite to the first edge) of the first set of bus bars and the second Groups of bus bars are parallel to each other. In other embodiments, the first set of bus bars and the second set of bus bars may form a non-zero angle relative to each other.

FIG. 15B shows two modules 30 a / 30 b coupled together to form module 32 . As shown in FIG. 15B, the first die set 30a overlaps the second die set 30b along the sides. Specifically, the second set of bus bars at the rear side of the second module 30b extend.

It should be noted that module 32 is not limited to having two modules 30 coupled to each other, and module 32 may have other numbers of modules 30 . Figure 15C shows 12 modules 30 coupled together to form module 32, each module 30 having six substrates. Each module 30 has a first side that overlaps a first adjacent module 30 (where the first set of bus bars (e.g., top bus bars) extends) and also has a second side that overlaps a second adjacent module 30. Side (the second set of busbars (eg, bottom busbars) extends).

In some embodiments, because the top bus bar of one module 30 is aligned with the bottom bus bar of an adjacent module 30, when two modules 30 overlap each other, the top bus bar of one module 30 will align with the adjacent module 30. Bottom Busbar Electrical Contact of Adjacent Modules 30 In other embodiments, adhesive may or may not be required, and adjacent modules 30 may simply overlap each other.

After multiple modules 30 are coupled to each other to form module 32 , module 32 may be further processed to form solar cells 50 . FIG. 16 shows a polymer film (eg, EVA film) and glass mounted to a module 32 having a plurality of modules 30 . The polymer film is first placed on the opposite surface of the module 32, and then the glass is placed on the opposite side to accommodate the polymer film and the module 32, the thickness of the solar cell 50 can be between 50 microns and 300 microns , for example, between 100 microns and 180 microns.

In the embodiment corresponding to FIGS. 15A-16 described above, multiple modules 30 (each module 30 having a single row of processed substrates) are coupled together by superimposed stacking. In some embodiments, module 30 may have multiple rows of processed substrates coupled to common membrane 120 . In such cases, adjacent rows of processed substrates (substrates) on the same film 120 may be electrically connected to each other. Figure 17 shows a technique for electrical connection of two modules coupled to each other through a thin film. As shown in FIG. 17, the thin film 120 connects the first substrate 20a and the second substrate 20b. The first substrate 20a is coupled to the membrane 120 and covers the first membrane opening 1201a. The second substrate 20b is coupled to the membrane 120 and connected to the second membrane opening 1201b.

The first substrate 20a has been processed and includes an I layer and an N layer on a first surface of the first substrate 20a, and it also includes an I layer on a second surface (opposite to the first surface) of the first substrate 20a. layer and P layer. The first substrate 20a also includes a front conductive layer and a back conductive layer.

Similarly, the second substrate 20b has been processed and includes the I layer and the N layer on the first surface of the second substrate 20b, and it also includes the second surface (opposite to the first surface) of the second substrate 20b The upper I layer and P layer. The second substrate 20b also includes a front conductive layer and a back conductive layer. In some embodiments, each conductive layer may be an ITO layer.

As shown in FIG. 17, the first top bus bar 36a and the first bottom bus bar 38a are formed by printing on opposite surfaces of the first substrate 20a. Similarly, a second top bus bar 36b and a second bottom bus bar 38b are formed by printing on opposing surfaces of the second substrate 20b. In some embodiments, the first top bus bar 36a is connected to the surface of the front conductive layer (eg, ITO layer), and the first bottom bus bar 38a is connected to the surface of the back conductive layer (eg, ITO layer).

To connect the first top bus bar 36a of the first substrate 20a (also referred to as the base) to the second bottom bus bar 38b of the adjacent second substrate 20b (also referred to as the base), a set of vias 39 may be formed, for example by Substrates 20a, 20b (also called substrates). Next, conductive lines may be formed in the vias (and optionally on the surface of the substrate) to electrically connect the first top bus bar 36a of the first substrate 20a to the second bottom bus bar 38b of the second substrate 20b. .

In one embodiment, vias are formed in the membrane 120, and then the first top bus bar 36a/second top bus bar 36b are formed on the top surface of the substrate 20a/20b (eg, using printing techniques). The first top bus bar 36a may overlap hole 1201a and the second top bus bar 36b may overlap hole 1201b such that the material of first top bus bar 36a/second top bus bar 36b will sink into hole 1201a/1201b respectively . Material may pass completely through holes 1201a/1201b. Next, the substrate 20a/20b may be turned over. Then, the first bottom bus bar 38a/second bottom bus bar 38b is formed on the bottom surface of the substrate 20a/20b (eg, using a printing technique). The second bottom bus bar 38b overlaps the hole 1201a to connect to the top first top bus bar 36a. In some cases, the material of the second bottom bus bar 38b may sink into the hole 1201a (eg, if the material of the first top bus bar 36a only partially extends within the hole 1201a) to connect to the first top bus bar 36a. In other cases, the material of the second bottom bus bar 38b may not sink into the hole 1201a (eg, if the material of the first top bus bar 36a extends through the hole 1201a) to connect to the first top bus bar 36a. The first bottom bus bar 38a is connected to the first top bus bar 36a/second top bus bar 36b of a previous substrate (not shown) in front of the substrate 20a. The holes 1201b connect the second top bus bar 36b of the substrate 20b to the bottom bus bar of the next substrate (not shown). In some cases, each bus bar can be a printed silver wire. method

FIG. 18 illustrates a substrate processing method 1800 according to some embodiments. Substrate processing method 1800 includes:

S1802. Provide a frame with a frame opening, a film configured to be coupled to the frame and cover at least a part of the frame opening, and couple a substrate to the film with a film opening.

S1804. Keep the frame, the film and the substrate in a vertical orientation.

S1806. When the substrate is in a vertical orientation, form a first I layer on the first surface of the substrate.

S1808. When the substrate is in a vertical orientation, form a second I layer on the second surface of the substrate, where the second surface of the substrate is opposite to the first surface.

S1810, when the substrate is in a vertical orientation, form an N layer on the first I layer of the substrate.

S1812, forming a P layer on the second I layer when the substrate is in a vertical orientation.

Optionally, in method 1800, the first I layer, the N layer, the second I layer and the P layer are formed by performing plasma enhanced chemical vapor deposition (PECVD).

Optionally, the method 1800 further includes: forming a first conductive layer over the first surface of the substrate; and forming a second conductive layer over the second surface of the substrate.

Optionally, in method 1800, the first conductive layer includes a first ITO layer, and the second conductive layer includes a second ITO layer.

Optionally, the method 1800 further includes: forming a first conductive line on the first surface of the substrate while the substrate is coupled to the film, the first conductive line is connected to the surface of the first conductive layer; and while the substrate is coupled to the film A second conductive line is formed on the second surface of the substrate, the second conductive line is connected to the surface of the second conductive layer.

Optionally, in method 1800, the first conductive line extends beyond the first edge of the substrate.

Optionally, in method 1800, the second conductive line extends beyond a second edge of the substrate, the second edge being opposite the first edge of the substrate.

Optionally, in method 1800, the substrate, at least a portion of the thin film, the first I layer, the N layer, the second I layer, the P layer, the first conductive layer A first die set is formed with the second conductive layer; and wherein the method further includes connecting the first die set and the second die set to form a component.

Optionally, in method 1800, an adhesive is used to connect the first die set and the second die set.

Optionally, in method 1800, the second module includes a second substrate, a first conductive line over a first surface of the second substrate, and a second conductive line over a second surface of the second substrate, the second The second surface of the second substrate is opposite to the first surface of the second substrate; and wherein when the first module and the second module are connected, the first surface of the first substrate on the first surface A first conductive line is electrically connected to the second conductive line on the second surface of the second substrate.

Optionally, method 1800 further includes: placing a first polymer film and a second polymer film on opposing surfaces of the component; and clamping the first polymer film between the first glass and the second glass, the component and the second Two polymer films.

Optionally, in method 1800, the first module includes a solar cell module.

Optionally, the method 1800 further includes roughening the first surface and the second surface of the substrate when the substrate is in a vertical orientation, wherein the roughening is performed before the formation of the first I layer, the N layer, the second I layer and the P layer morphed action.

Optionally, method 1800 also includes moving the frame/film/substrate together to a plurality of processing stations, wherein the moving action is performed while the substrate is oriented vertically.

Optionally, method 1800 also includes removing the membrane from the frame.

Optionally, in method 1800, the substrate is used to fabricate a solar module, and wherein the method further includes coupling another film to the frame, and coupling another substrate to the film to fabricate another Solar modules.

Optionally, in method 1800, a peripheral portion of the membrane is coupled to and forms a seal with the portion of the membrane defining the membrane opening.

Optionally, in method 1800, the membrane includes an additional membrane opening, wherein the additional substrate is coupled to the membrane covering the additional membrane opening.

Optionally, method 1800 further includes providing a roughening treatment on the opposing surface of the substrate, which can be achieved using dry etching.

Optionally, method 1800 further includes, prior to the act of providing the roughening treatment, coupling the membrane to a first isolation grid, wherein the first isolation grid is coupled to the first surface of the membrane.

Optionally, method 1800 further includes coupling the membrane to a second isolation grating, wherein the second isolation grid is coupled to a second surface of the membrane, the second surface of the membrane being opposite the first surface of the membrane.

Optionally, in method 1800, a first isolation grid is configured to isolate the substrate from an additional substrate that is also coupled to the membrane, wherein at least a portion of the first isolation grid is located between the substrate and the additional substrate.

Optionally, method 1800 further includes forming a first conductive layer over the N layer, and forming a second conductive layer over the P layer, wherein the first conductive layer is over the substrate and spans a space between the substrate and the additional substrate, and Extended on additional substrate.

Optionally, method 1800 further includes removing the first isolation grid, wherein removing the first isolation grid removes a portion of the first conductive layer extending over the space between the substrate and the additional substrate, thereby allowing the substrate and the additional substrate to The substrate is electrically isolated.

Optionally, method 1800 further includes removing a portion of the first conductive layer spanning the space between the substrate and the additional substrate using a laser device.

Optionally, in method 1800, the substrate is processed to form a first die set, and the method further includes: forming a second die set using an additional substrate; The conductive lines on the second surface of the set are electrically coupled.

Optionally, in method 1800, the act of electrically coupling includes stacking a portion of the second die set on a portion of the first die set such that the conductive lines on the front surface of the first die set are in contact with the first die set of the second die set. The conductive lines on the two surfaces are in contact.

Optionally, in method 1800, the act of electrically coupling includes: creating a hole through the thickness of the film at a location between the substrate and the additional substrate; and forming an electrical conductor in the hole. Variants of Manufacturing Systems

Fig. 19 shows a variation of the manufacturing system 10, which is the same as the manufacturing system 10 shown in Fig. 1A except that the manufacturing system 10 described in Fig. 19 does not include the texturing station 104. In the manufacturing system 10 of FIG. 19, there is a first front film station 102 configured to form an I layer on a first side of a substrate, and a second front film station 102 configured to form an N layer on a first side of a substrate. Station 102. The system 10 also has a first backfilm station 103 configured to form an I-layer on the second side of the substrate, and a second backfilm station 103 configured to form a P-layer on the second side of the substrate. In some embodiments, the first front film station 102 and the first back film station 103 may be configured as a microcrystalline layer of an N-doped layer and a P-doped layer. Additionally, in some embodiments, the I layer may be an amorphous silicon (SI:H) layer. During use of the system 10 of FIG. 19 , the substrates carried by the frame 101 are roughened before entering the preparation station 107 . In some cases, roughening is performed on the front and rear surfaces of the substrate by dry etching in a dry etch chamber. In other cases, roughening is performed on the front and rear surfaces of the substrate by wet etching.

The use of the terms "first", "second", "third" and "fourth" do not imply any particular order, but are included to identify individual elements. Furthermore, the use of the terms first, second, etc. does not denote any order or importance, but rather the terms first, second, etc. are used to distinguish one element from another. Note that the first and second terms are used here and elsewhere for labeling purposes and are not intended to imply any particular spatial or temporal ordering. Furthermore, the reference to a first element does not imply the presence of a second element and vice versa.

Although the present invention is disclosed above, the present invention is not limited thereto. Any person skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention should be based on the scope defined by the claims.

10: Manufacturing system 100: transmission path 101: Frame 1010: Peripheral part 1011: frame opening 1012: Transmission track 1013: vertical holding mechanism 102: Front film station 102a: first electrode 102b: second electrode 103:Back film station 104: Texturing station 104a: Former Texturing Station 104b: Rear texturing station 106:Magnetron sputtering station 106a: the first magnetron sputtering device 106b: the second magnetron sputtering device 106c: shutter 107: Preparation station 108: Loading station 109: preheating station 110: buffer cavity 111: Unloading room 112: storage station 118:Top Rail 120: film 120a: first film 120b: second film 1201: Membrane opening 1201a, 1201b: holes 1201a: first film opening 1201b: second film opening 130: Slit valve 150: Magnetic shield 151: second magnet 152: The third magnet 160: isolation grid device 1601: frame 1602: grid opening 1603: Isolation Grid 170, 171, 172, 174, 176, 178, 180: items 1800: method 181, 182, 183, 184, 186, 187, 190: item 20: Substrate 20a: first substrate 20b: second substrate 30:Module 30a: The first module 30b: Second module 32:Module 36a: First top bus bar 36b: Second top bus bar 38a: First bottom bus bar 38b: Second bottom bus bar 39: Through hole 402: channel 404: track 50: solar cell 501: the first glass 502: the first plastic layer 503: Second plastic layer 504: second glass 610: subframe L: slim track S1802, S1804, S1806, S1808, S1810, S1812: steps

The above and other features and advantages will become apparent to those skilled in the art from the following detailed description of exemplary embodiments thereof, by reference to the accompanying drawings, in which: FIG. 1A shows a system for substrate processing provided by the present invention; FIG. 1B shows a kind of additional processing after the processing completed by the system of FIG. 1A provided by the present invention; Figure 2 illustrates a framework provided by the present invention configured for use with the system of Figure 1A; Fig. 3 shows a kind of frame of Fig. 2 provided by the present invention, especially shows the frame that is movably coupled to the transmission track; Fig. 4 shows a cross-section of the transmission track of Fig. 3 provided by the present invention; Fig. 5 shows a film for coupling with the frame of Fig. 2 provided by the present invention; Figures 6A to 6C show different variations of the membrane provided by the present invention for coupling with the frame of Figure 2; Figure 6D shows a method of attaching a substrate to a film provided by the present invention; Figure 6E shows a frame provided by the present invention with a plurality of sub-frames for carrying corresponding films and corresponding substrate groups; FIG. 6F shows an isolation grid configured to isolate substrates from each other provided by the present invention; Figure 6G illustrates the isolation of a substrate group provided by the present invention; Figure 6H shows another method of attaching a substrate to a membrane provided by the present invention; Figure 7 shows a processing chamber in a processing mode provided by the present invention; Fig. 8 shows the relative positioning between the elements of the processing chamber of Fig. 7 and the frame of Fig. 2 provided by the present invention; Figure 9 shows the processing chamber of Figure 7 in transfer mode provided by the present invention; Figure 10A shows another processing chamber provided by the present invention; Figure 10B shows two film stations provided by the present invention, each film station having the configuration shown in Figure 10A and in process mode; Figure 10C shows the two film stations of Figure 10B in transport mode provided by the present invention; Fig. 11 shows the sputtering module provided by the present invention with the shutter open; Fig. 12 shows the sputtering module provided by the present invention with a closed shutter; Figure 13 illustrates a technique provided by the present invention for removing a processed substrate from the frame of Figure 2; Figure 14 shows a cross-sectional view of a solar cell module provided by the present invention; FIG. 15A shows a module provided by the present invention having a thin film of multiple substrates coupled thereto; Figure 15B shows two modules provided by the present invention coupled together to form an element; Figure 15C shows twelve modules coupled together to form a component provided by the present invention; Figure 16 shows the mounting of polymer film and glass onto multiple modules provided by the present invention; Figure 17 shows the technology of two modules coupled to each other through a thin film electrical connection provided by the present invention; Figure 18 shows a substrate processing method provided by the present invention; FIG. 19 shows another system for substrate processing provided by the present invention.

1800: method

S1802, S1804, S1806, S1808, S1810, S1812: steps

Claims (43)

A substrate processing system comprising: a frame with frame openings; and a membrane configured to be coupled to the frame and cover at least a portion of the frame opening, the membrane comprising a membrane opening, wherein the membrane opening has a membrane opening that is equal to or less than a frame opening area of the frame opening area; wherein the membrane is configured to be coupled to a substrate, the substrate covers the membrane opening when the substrate is coupled to the membrane, and the membrane is configured to hold the substrate relative to the the set position of the frame; and The opening area of the film is smaller than the total area of the substrate. The system of claim 1, further comprising a substrate, wherein the substrate is configured to couple to the membrane and cover the membrane opening. The system of claim 2, wherein the substrate is coupled to the film via an adhesive or via one or more clamps. The system of claim 1, wherein when the membrane is coupled to the frame, the membrane is in tension. The system of claim 1, wherein at least a portion of the film is a component of a solar cell. The system of claim 1, further comprising a transport track configured to transport the frame when the film is coupled to the frame, and transport the substrate when coupled to the film. frame. The system of claim 6, wherein the frame includes a first magnet, and wherein the transport track includes a second magnet configured to interact with the first magnet of the frame, to hold the frame in a certain position relative to the transport track. The system of claim 6, further comprising a plurality of processing stations, wherein the transfer track is configured to sequentially move the frame, the film, and the substrate to the plurality of processing stations. The system of claim 8, further comprising at least two of an etching station, a plasma enhanced chemical vapor deposition (PECVD) station, and a physical vapor deposition (PVD) station, the etching station configured to provide dry etching for the substrate; the PECVD station configured to provide PECVD deposition for the substrate; The PVD station configured to provide PVD deposition for the substrate. The system of claim 1, further comprising a memory configured to accommodate a plurality of frames carrying a plurality of substrates, wherein at least one of the plurality of frames is the frame opening having the frame opening A frame, and wherein at least one of the plurality of substrates is the substrate coupled to the membrane. The system of claim 1, wherein the membrane is configured to form a seal around the substrate. The system of claim 1, wherein the membrane includes an additional membrane opening, wherein the membrane is configured to couple with an additional substrate such that the additional substrate covers the additional membrane opening. The system of claim 1, wherein the system is configured to process the substrate to fabricate one or more solar cells. The system of claim 1, wherein the frame includes a plasma resistant coating. The system according to claim 1, further comprising a first isolation grid disposed on the first surface of the film, and a second isolation grid disposed on the second surface of the film, wherein the film The second surface of the film is opposite to the first surface of the film. The system of claim 1, further comprising a vertical holding mechanism configured to hold the frame vertically. A substrate processing method, comprising: providing a frame having a frame opening, and a film configured to be coupled to the frame and cover at least a portion of the frame opening; coupling a substrate to said membrane provided with said membrane opening; maintaining the frame, the film and the substrate in a vertical orientation; forming a first I-layer on a first surface of the substrate when the substrate is in a vertical orientation; forming a second I-layer on a second surface of the substrate, the second surface of the substrate being opposite the first surface, when the substrate is vertically oriented; forming an N layer on the first I layer when the substrate is vertically oriented; and When the substrate is vertically oriented, a P layer is formed on the second I layer. According to the method described in claim item 17, further comprising: forming a first conductive layer over the first surface of the substrate; and A second conductive layer is formed over the second surface of the substrate. The method of claim 18, wherein the first conductive layer comprises a first tin-doped indium oxide ITO layer, and the second conductive layer comprises a second ITO layer. According to the method described in claim 18, further comprising: forming a first conductive line over the first surface of the substrate while the substrate is coupled to the film, the first conductive line connected to a surface of the first conductive layer; and A second conductive line is formed over the second surface of the substrate while the substrate is coupled to the film, the second conductive line connected to the surface of the second conductive layer. The method of claim 20, wherein the first conductive line extends beyond the first edge of the substrate. The method of claim 21, wherein the second conductive line extends beyond a second edge of the substrate, the second edge being opposite the first edge of the substrate. The method of claim 20, wherein the substrate, at least a portion of the thin film, the first I layer, the N layer, the second I layer, the P layer, the first conductive layer and said second conductive layer together form a first module; and Wherein the method further includes connecting the first die set and the second die set to form a component. The method of claim 23, wherein the first die set and the second die set are connected using an adhesive. The method of claim 23, wherein the first module includes a first substrate, a first conductive line above a first surface of the first substrate, and a first conductive line above a second surface of the first substrate The second conductive line of the first substrate, the second surface of the first substrate is opposite to the first surface of the first substrate; the second module includes a second substrate, and the first substrate of the second substrate a first conductive line over a surface, and a second conductive line over a second surface of the second substrate, the second surface of the second substrate is connected to the first surface of the second substrate opposite; and wherein when the first module and the second module are connected, the first conductive line on the first surface of the first substrate is electrically connected to the second substrate The second conductive line on the second surface. According to the method described in claim 23, further comprising: placing a first polymer film and a second polymer film on opposing surfaces of the element; and The first polymer film, the element and the second polymer film are sandwiched between a first glass and a second glass. The method of claim 23, wherein the first module comprises a solar cell module. The method of claim 17, wherein the method further comprises roughening the first surface and the second surface of the substrate when the substrate is oriented vertically, wherein at the first I layer, the N layer, the second I layer and the P layer are formed before performing the roughening operation. The method of claim 17, wherein the method further comprises moving the frame, the film, and the substrate together to a plurality of processing stations, wherein the moving act is performed when the substrate is oriented vertically. The method of claim 17, wherein the method further comprises removing the film from the frame. The method of claim 30, wherein the substrate is used to fabricate a solar module, and the method further comprises coupling another film to the frame, and coupling another substrate to the film to form another Solar modules. The method of claim 17, wherein a peripheral portion of the membrane is coupled to the membrane having the membrane opening and forms a seal with the membrane. The method of claim 17, wherein said membrane includes an additional membrane opening, wherein an additional substrate is coupled to said membrane having said additional membrane opening. The method of claim 17, wherein the method further comprises roughening the opposing surfaces of the substrate. The method of claim 34, wherein the method further comprises, prior to performing the roughening process, coupling the film to a first isolation grid, wherein the first isolation grid is coupled to a first isolation grid of the film. surface. The method of claim 35, wherein the method further comprises coupling the membrane to a second isolation grid, wherein the second isolation grid is coupled to a second surface of the membrane, the membrane having The second surface is opposite the first surface of the film. The method of claim 35, wherein the first isolation grid is configured to isolate the substrate from an additional substrate also coupled to the membrane, wherein at least a portion of the first isolation grid is located between the between the substrate and the additional substrate. The method of claim 37, further comprising forming a first conductive layer over the N layer, and forming a second conductive layer over the P layer, wherein the first conductive layer extends over the substrate, spanning the space between the substrate and the additional substrate and over the additional substrate. The method according to claim 38, further comprising removing the first isolation grid, wherein the removal of the first isolation grid causes the first conductive layer to be separated between the substrate and the additional substrate. A portion extending over the spacer therebetween is removed, thereby electrically isolating the substrate from the additional substrate. The method of claim 38, further comprising removing a portion of the first conductive layer using a laser device, wherein a portion of the first conductive layer spans the gap between the substrate and the additional substrate. interval. The method of claim 17, wherein the substrate is processed to form a first module, and the method further comprises: forming a second module using the additional substrate; and Electrically coupling the conductive lines on the first surface of the first die set to the conductive lines on the second surface of the second die set. The method of claim 41, wherein the act of electrically coupling includes stacking a portion of the second die set over a portion of the first die set such that the first surface of the first die set The conductive wires on the contact surface are in contact with the conductive wires on the second surface of the second module. The method according to claim 41, wherein the action of electrical coupling comprises: punching a hole in the film at a position between the substrate and the additional substrate to form a through hole; and Electrical conductors are formed in the vias.

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