TW202314944A - Substrate processing apparatus, substrate processing system and substrate processing method - Google Patents
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
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- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
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- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
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Abstract
Description
本發明係關於一種使用處理流體來處理基板之基板處理技術。The present invention relates to a substrate processing technique using a processing fluid to process a substrate.
藉由援用日本專利申請案特願2021-149933(2021年9月15日申請)的說明書、圖式以及申請專利範圍中之揭示內容而將日本專利申請案特願2021-149933的全部內容併入本文中。The entire content of Japanese Patent Application No. 2021-149933 is incorporated by citing the specification, drawings, and disclosures in the claims of Japanese Patent Application No. 2021-149933 (filed on September 15, 2021) In this article.
在半導體基板、顯示裝置用玻璃基板等各種基板的處理工序中,包含藉由各種處理流體來處理基板的表面之工序。以往,使用藥液或清洗(rinse)液等液體作為處理流體之處理係被廣泛進行,但近年來使用超臨界流體之處理亦得以實用化。例如在日本專利特開2021-9877號公報中記載了一種裝置,該裝置係將基板在被支撐托盤(相當於本申請發明的「基板支撐部」的一例)支撐之狀態下搬入至處理腔室(processing chamber)的處理空間,於該處理空間內藉由超臨界狀態的處理流體使基板乾燥。該裝置中,設置有在處理腔室外與支撐托盤之間交接基板之移載機構。移載機構係具有在上下方向升降之升降銷(lift pin)。升降銷係相對於設置在支撐托盤之貫通孔進退自如。升降銷的上端部較支撐面更向上方突出,藉此抵接至基板的下表面來支撐基板。另一方面,因升降銷向貫通孔後退,上述基板被交遞至支撐托盤。Processes for processing various substrates such as semiconductor substrates and glass substrates for display devices include processes for processing the surfaces of the substrates with various processing fluids. Conventionally, treatments using liquids such as chemical solutions and rinse solutions as treatment fluids have been widely performed, but in recent years, treatments using supercritical fluids have also been put into practical use. For example, Japanese Patent Application Laid-Open No. 2021-9877 describes an apparatus for carrying a substrate into a processing chamber while being supported by a support tray (corresponding to an example of the "substrate support unit" of the present invention). (processing chamber) processing space in which the substrate is dried by a supercritical processing fluid. This device is provided with a transfer mechanism for transferring substrates between the outside of the processing chamber and the support tray. The transfer mechanism has lift pins that move up and down. The lift pins can move forward and backward freely relative to the through holes provided on the support tray. The upper ends of the lift pins protrude upwards from the supporting surface so as to abut against the lower surface of the substrate to support the substrate. On the other hand, since the lift pins recede toward the through holes, the substrates are delivered to the support tray.
上述先前技術中,由於在支撐托盤設置有貫通孔,因此在支撐托盤的下方側流動之處理流體的一部分係經由貫通孔向上方側流入並形成上升流(圖4、圖7中的符號F2)。該上升流有時經由基板的下表面到達基板的上表面側。因該上升流,微粒(particle)有時從基板的下方側被搬運至基板的上表面側並再次附著於形成在基板的上表面之微細圖案。而且,上升流有時會擾亂沿著基板的上表面流動之處理流體的流動,從而增加圖案(pattern)崩塌的發生風險。In the above-mentioned prior art, since the through-hole is provided in the support tray, part of the treatment fluid flowing below the support tray flows upward through the through-hole to form an upward flow (symbol F2 in Fig. 4 and Fig. 7 ). . This upward flow may reach the upper surface side of the substrate via the lower surface of the substrate. Due to the upflow, particles may be transported from the lower side of the substrate to the upper surface side of the substrate, and adhere again to the fine pattern formed on the upper surface of the substrate. Also, upwelling sometimes disrupts the flow of process fluid flowing along the upper surface of the substrate, thereby increasing the risk of pattern collapse.
本發明係鑒於上述課題而完成,目的在於:當使用處理流體來處理基板時有效地防止經由設置於基板支撐部之貫通孔流入至基板側之處理流體所產生之不良影響。The present invention was made in view of the above problems, and an object of the present invention is to effectively prevent adverse effects of the processing fluid flowing into the substrate side through the through-hole provided in the substrate supporting portion when the substrate is processed using the processing fluid.
本發明的第一態樣為一種基板處理裝置,係用以使用處理流體來處理基板,並具備:基板支撐部,係在鉛直方向於基板支撐位置處從下方支撐水平姿勢的基板;移載機構,係具有用以經由設置於基板支撐部之貫通孔進行升降之升降銷,藉由升降銷相對於貫通孔之進退從而與基板支撐部之間進行基板的交接;以及中間移動體,係可於基板與基板支撐部之間在鉛直方向移動;中間移動體係藉由從貫通孔向鉛直上方突出之升降銷的上端部從下方被支撐且在較基板支撐位置更靠鉛直上方處支撐基板的下表面;藉由升降銷後退至貫通孔,於基板支撐位置處將基板交遞至基板支撐部並且卡止於基板支撐部而堵住貫通孔。A first aspect of the present invention is a substrate processing apparatus for processing a substrate using a processing fluid, comprising: a substrate supporting portion supporting a substrate in a horizontal posture from below at a substrate supporting position in a vertical direction; and a transfer mechanism. , has a lifting pin for lifting and lowering through a through hole provided in the substrate supporting part, and the substrate is handed over to the substrate supporting part by the advancing and retreating of the lifting pin relative to the through hole; and the intermediate moving body can be used in The substrate and the substrate support part move in the vertical direction; the intermediate moving system is supported from below by the upper end of the lift pin protruding vertically upward from the through hole and supports the lower surface of the substrate at a position higher vertically than the substrate support position ; With the lifting pin retreating to the through hole, the substrate is handed over to the substrate supporting part at the substrate supporting position and locked on the substrate supporting part to block the through hole.
而且,本發明的第二態樣為一種基板處理系統,係具備:上述基板處理裝置;基板收容部,係收容基板;中間移動體收容部,係收容中間移動體;以及搬運裝置,係將基板從基板收容部搬運至基板處理裝置,將中間移動體從移動體收容部搬運至基板處理裝置;基板處理裝置係將藉由搬運裝置從中間移動體收容部搬出之中間移動體交遞至基板支撐部;將藉由搬運裝置從基板收容部搬出之基板交遞至被基板支撐部支撐之中間移動體的上方抵接部;藉由處理流體來處理在基板支撐部上經由中間移動體支撐之基板。Furthermore, a second aspect of the present invention is a substrate processing system comprising: the substrate processing apparatus described above; a substrate storage unit for storing substrates; an intermediate moving body storage unit for storing intermediate moving bodies; and a transfer device for holding the substrate Transport from the substrate storage unit to the substrate processing device, and transport the intermediate moving body from the mobile body storage unit to the substrate processing device; the substrate processing device transfers the intermediate moving body carried out from the intermediate moving body storage unit by the transfer device to the substrate support Part; hand over the substrate carried out from the substrate storage part by the transfer device to the upper contact part of the intermediate moving body supported by the substrate supporting part; process the substrate supported by the intermediate moving body on the substrate supporting part by processing fluid .
進一步地,本發明的第三態樣為一種基板處理方法,係用以藉由上述基板處理裝置執行處理,並具備下述工序:將中間移動體從中間移動體收容部交遞至基板支撐部;將基板從基板收容部交遞至被基板支撐部支撐之中間移動體的上方抵接部;以及藉由處理流體來處理在基板支撐部上經由中間移動體支撐之基板。Furthermore, the third aspect of the present invention is a substrate processing method, which is used to perform processing by the above-mentioned substrate processing apparatus, and includes the following steps: handing over the intermediate moving body from the intermediate moving body storage part to the substrate supporting part ; delivering the substrate from the substrate accommodating part to the upper abutting part of the intermediate moving body supported by the substrate supporting part; and treating the substrate supported by the intermediate moving body on the substrate supporting part with a processing fluid.
如此構成之發明中,為了藉由移載機構的升降銷而與基板支撐部之間交接基板,於基板支撐部設置有貫通孔。貫通孔係成為處理流體流向基板側之流通路徑,但當藉由升降銷將基板交遞至基板支撐部時,會被中間移動體堵住。因此,處理流體經由貫通孔向基板側之流入係被中間移動體阻止。In the invention thus constituted, a through-hole is provided in the substrate support part in order to transfer the substrate to and from the substrate support part via the lift pins of the transfer mechanism. The through holes serve as flow paths for the processing fluid to flow to the substrate side, but when the substrate is handed over to the substrate supporting part by the lift pins, it will be blocked by the intermediate moving body. Therefore, the inflow of the processing fluid to the substrate side through the through hole is blocked by the intermediate moving body.
如以上般,根據本發明,能夠在使用處理流體來處理基板時有效地防止經由設置於基板支撐部之貫通孔流入至基板側之處理流體所產生之不良影響。As described above, according to the present invention, when a substrate is processed using a processing fluid, it is possible to effectively prevent adverse effects of the processing fluid flowing into the substrate side through the through hole provided in the substrate supporting portion.
上述本發明的各態樣所具有之複數個構成要素並非全部為必須,用以解決上述課題的一部分或全部、或者用以達成本說明書中記載之功效的一部分或全部,而適當地對前述複數個構成要素的一部分構成要素進行變更、刪除、與新的其他構成要素之替換、限定內容的一部分刪除。而且,用以解決上述課題的一部分或全部、或者用以達成本說明書中記載之功效的一部分或全部,亦可將上述本發明的一態樣所包含之技術特徵的一部分或全部與上述本發明的其他態樣所包含之技術特徵的一部分或全部組合,形成本發明的獨立的一個形態。Not all of the plurality of constituent elements of the above-mentioned aspects of the present invention are essential, and they are used to solve some or all of the above-mentioned problems, or to achieve some or all of the effects described in this specification, and the above-mentioned plural A part of a constituent element is changed, deleted, replaced with a new other constituent element, and a part of a limited content is deleted. Furthermore, in order to solve part or all of the above-mentioned problems, or to achieve part or all of the effects described in this specification, part or all of the technical features included in the above-mentioned aspect of the present invention may be combined with the above-mentioned present invention. A part or all of the technical features included in other aspects of the invention form an independent form of the present invention.
圖1係顯示本發明之基板處理裝置的第一實施形態的概略構成之圖。圖2係顯示圖1所示之基板處理裝置中之與基板的交接相關之各部的形狀以及位置關係之圖。圖3A以及圖3B係圖1所示之基板處理裝置中的基板的交接動作時的各部的部分放大圖。另外,這些圖式以及稍後說明之圖式中,為了容易理解,視需要誇張或簡化地描繪各部分的尺寸或數量。而且,為了統一地顯示各圖中之方向,如圖1所示般設定XYZ正交座標系統。此處,XY平面為水平面,Z方向係顯示鉛直方向。更具體而言,-Z方向係顯示鉛直下方。FIG. 1 is a diagram showing a schematic configuration of a first embodiment of a substrate processing apparatus of the present invention. FIG. 2 is a diagram showing the shape and positional relationship of each part related to the transfer of the substrate in the substrate processing apparatus shown in FIG. 1 . FIGS. 3A and 3B are partially enlarged views of respective parts during a transfer operation of a substrate in the substrate processing apparatus shown in FIG. 1 . In addition, in these drawings and the drawings described later, the size and quantity of each part are exaggerated or simplified as needed for easy understanding. Furthermore, in order to uniformly display the directions in each figure, an XYZ orthogonal coordinate system is set as shown in FIG. 1 . Here, the XY plane is a horizontal plane, and the Z direction is a vertical direction. More specifically, the -Z direction is displayed vertically downward.
該基板處理裝置1為用以使用超臨界狀態的處理流體來處理例如半導體基板般的各種基板的表面之裝置。此處,作為本實施形態中的「基板」,可應用半導體晶圓、光罩用玻璃基板、液晶顯示用玻璃基板、電漿顯示用玻璃基板、FED(Field Emission Display;場發射顯示器)用基板、光碟用基板、磁碟用基板、光磁碟用基板等各種基板。以下,主要以半導體晶圓的處理中所使用之基板處理裝置為例參照圖式進行說明,但亦可同樣地應用於以上例示之各種基板的處理。This
基板處理裝置1係具備處理單元10、移載單元30、供給單元50、中間移動體70以及控制單元90。處理單元10係成為超臨界乾燥處理的執行主體,移載單元30係接取被未圖示之外部的搬運裝置搬運而來之未處理的基板並搬入至處理單元10,且將處理後的基板從處理單元10搬出至外部的搬運裝置。供給單元50係將處理所需之化學物質以及動力供給至處理單元10以及移載單元30。中間移動體70係於移載單元30交接基板時與移載單元30的升降銷37一體地移動,另一方面如後詳述般於處理單元10處理基板時與支撐托盤15一起移動。The
控制單元90係控制這些裝置的各部從而實現預定的處理。出於該目的,控制單元90中具備下述構件等:CPU(Central Processing Unit;中央處理單元)91,係執行各種控制程式;記憶體92,係暫時地記憶處理資料;儲存器(storage)93,係記憶CPU91所執行之控制程式;以及介面94,係用以與使用者或外部裝置進行資訊交換。後述的裝置的動作係藉由CPU91執行預先寫入至儲存器93之控制程式而使裝置各部進行預定的動作來實現。The
如圖1所示,處理單元10係具有在基座11上安裝有處理腔室12之構造。處理腔室12係由幾個金屬塊的組合所構成,內部為空腔且構成處理空間SP。處理對象的基板S係被搬入至處理空間SP內而接受處理。於處理腔室12的-Y側側面形成有在X方向細長延伸之狹縫狀的開口121,並經由開口121將處理空間SP與外部空間連通。As shown in FIG. 1 , the
於處理腔室12的(-Y)側側面以蓋住開口121之方式設置有蓋構件13。於蓋構件13的+Y側側面以水平姿勢安裝有平板狀的支撐托盤15。支撐托盤15的上表面151為可載置基板S之支撐面。如圖2所示,於該上表面151的基板支撐區域,複數個(本實施形態中為三個)貫通孔152係分散地設置於鉛直方向Z。各貫通孔152係為了使後述之移載單元30的升降銷37從支撐托盤15進退而設置,各貫通孔152的內徑係設定得較升降銷37的外徑稍寬。A
而且,相對於三個貫通孔152,拔插自如地各配置有一個插塞構造體71,由這三個插塞構造體71構成中間移動體70。各插塞構造體71係具有:柱狀構件72,係整體上相對於貫通孔152拔插自如且下端部精加工為與升降銷37的上端部卡合自如之形狀;以及傘構件73,係以從上方覆蓋貫通孔152以及貫通孔152的周圍之方式與柱狀構件72的上端部連接。插塞構造體71係能夠使用將金屬材料例如不鏽鋼鋼材加工後電解研磨表面而成的構造體。Furthermore, one
此處,例如圖3B所示,當在插塞構造體71的柱狀構件72插入至貫通孔152之狀態下升降銷37向貫通孔152上升時,在貫通孔152內升降銷37的上端部係卡合於柱狀構件72的下表面。當升降銷37一邊維持著該卡合狀態一邊進一步通過貫通孔152而穿透支撐托盤15並上升時,如圖3A所示,插塞構造體71係覆蓋升降銷37的上端部且與升降銷37一起在鉛直方向Z移動。然後,當升降銷37移動至預先設定之上升端時,插塞構造體71係被定位至向上方離開支撐托盤15之搬入搬出位置P1。這樣,藉由上端部被插塞構造體71封蓋之升降銷37,可與設置於外部的搬運裝置(例如圖10所示之搬運機器人111)之手部H之間交接基板S。另外,在本實施形態中,突起部位731係向上方突出設置於傘構件73的上端中央部,當與手部H交接基板S時抵接至基板S的下表面以進行支撐。Here, for example, as shown in FIG. 3B , when the
另一方面,當升降銷37經由貫通孔152下降時,如以下詳述般,插塞構造體71係一起下降至支撐托盤15的上表面151的高度位置P3。亦即,由插塞構造體71所構成之中間移動體70係位於支撐托盤15與基板S的中間且與升降銷37的升降動作連動地在鉛直方向Z移動。尤其如圖3B所示,在升降銷37的上端部移動至較上述高度位置P3更下方的期間,依序執行基板支撐位置P2處的基板支撐以及高度位置P3處的貫通孔152的密封。亦即,於支撐基板S之突起部位731與升降銷37一體地移動至較基板支撐位置P2更下方之階段,基板S被交遞至從支撐托盤15的上表面151豎立設置之複數個基板支撐銷153。複數個基板支撐銷153的上端部位均在鉛直方向Z位於基板支撐位置P2處。藉此,基板S係以從支撐托盤15的上表面151浮起預定高度(=P2-P3)之狀態被定位於基板支撐位置P2。稍晚一點,隨著升降銷37的下降,插塞構造體71亦一體地下降,柱狀構件72整體完全進入貫通孔152內,且在高度位置P3處傘構件73係卡止於貫通孔152的周圍並從上方堵住貫通孔152。藉此,中間移動體70完全堵住三個貫通孔152並且與支撐托盤15一體化。On the other hand, when the
接下來,升降銷37係從貫通孔152以及插塞構造體71向下方離開,移動至不與支撐托盤15的Y方向移動干涉的位置。Next, the
如上述般為了使升降銷37升降,如圖1以及圖2所示,包含升降銷37之移載單元30係進一步地具備本體31、升降構件33以及基底構件35。升降構件33為在Z方向延伸之柱狀的構件,藉由未圖示之支撐機構在Z方向移動自如地支撐。於升降構件33的上部安裝有具有大致水平的上表面之基底構件35,從基底構件35的上表面向上地豎立設置有複數個升降銷37。升降銷37各自的上端部係經由插塞構造體71抵接至基板S的下表面,藉此從下方以水平姿勢支撐基板S。為了穩定地支撐基板S,期望設置有上端部的高度彼此相等之N(N≧3)個以上的升降銷37,且分別對應地設置N個貫通孔152與N個插塞構造體71。In order to raise and lower the lift pins 37 as described above, the
升降構件33係藉由設置於供給單元50之升降機構51而可升降移動。具體而言,升降機構51係例如具有線性馬達、線性導軌(linear guide)、滾珠螺桿機構、螺線管(solenoid)、氣缸(air cylinder)等線性運動機構(linear motion mechanism),這種線性運動機構係使升降構件33在Z方向移動。升降機構51係根據來自控制單元90的控制指令而動作。The lifting
基底構件35係藉由升降構件33的升降而上下移動,與此一體地複數個升降銷37係上下移動。藉此,如上述般,移載單元30與支撐托盤15之間的基板S的交接係經由中間移動體70而實現。The
在這種基板S的交接完成且升降銷37從支撐托盤15退避至下方之時間點,如圖3B所示中間移動體70係與支撐托盤15一體化。如圖1以及圖2所示,該支撐托盤15係以懸臂姿勢保持於蓋構件13。蓋構件13係藉由省略圖示之支撐機構在Y方向水平移動自如地支撐。蓋構件13係藉由設置於供給單元50之進退機構53而可相對於處理腔室12進退移動。具體而言,進退機構53係例如具有線性馬達、線性導軌、滾珠螺桿機構、螺線管、氣缸等線性運動機構,這種線性運動機構係使蓋構件13在Y方向移動。因此,藉由進退機構53根據來自控制單元90的控制指令進行動作,從而支撐托盤15、中間移動體70以及基板S係與蓋構件13一起在Y方向移動。When the handover of the substrate S is completed and the lift pins 37 retreat downward from the
如圖2所示,當藉由蓋構件13向(-Y)方向移動從而支撐托盤15經由開口121從處理空間SP向外部拉出時,可存取(access)支撐托盤15。亦即,能夠進行基板S向支撐托盤15之載置以及載置於支撐托盤15之基板S的取出。另一方面,如圖3B所示,藉由蓋構件13向+Y方向移動,從而支撐托盤15係被收容至處理空間SP內。於支撐托盤15載置有基板S之情形下,基板S係與藉由中間移動體70堵住貫通孔152之狀態的支撐托盤15一起被搬入至處理空間SP。As shown in FIG. 2 , when the
藉由蓋構件13向+Y方向移動而堵住開口121,處理空間SP係被密閉。另外,雖省略圖示,於蓋構件13的+Y側側面與處理腔室12的-Y側側面之間設置有密封構件,從而保持處理空間SP的氣密狀態。而且,藉由未圖示之鎖定機構,蓋構件13係相對於處理腔室12被固定。在這樣確保了處理空間SP的氣密狀態之狀態下,於處理空間SP內執行對於基板S之處理。When the
在本實施形態中,從設置於供給單元50之流體供給部57將超臨界處理中可利用之物質的流體例如二氧化碳以氣體或液體的狀態供給至處理單元10。二氧化碳係在相對低溫、低壓下成為超臨界狀態且具有良好地溶解基板處理中經常使用之有機溶劑之性質,就該方面而言為適合於超臨界乾燥處理之化學物質。In this embodiment, a fluid such as carbon dioxide, which is a substance usable in supercritical treatment, is supplied to the
流體係填充至處理空間SP,當處理空間SP內達到適當的溫度以及壓力時,流體係成為超臨界狀態。這樣,基板S於處理腔室12內被處理流體處理。於供給單元50中設置有流體回收部55,處理後的流體係被流體回收部55回收。流體供給部57以及流體回收部55係被控制單元90控制。The fluid system is filled in the processing space SP, and when the inside of the processing space SP reaches an appropriate temperature and pressure, the fluid system becomes a supercritical state. In this way, the substrate S is processed by the processing fluid in the
圖4係示意性地顯示第一實施形態中基板於處理腔室內被處理流體處理之情況之圖。本實施形態與先前技術不同點在於藉由構成中間移動體70之插塞構造體71堵住貫通孔152,而其他構成以及動作基本相同。亦即,先前技術中,不具有插塞構造體71,且貫通孔152係將支撐托盤15的下方空間SP1與上方空間SP2連通。因此,於處理腔室12內流動之處理流體中之於下方空間SP1流動之處理流體F1的一部分係如圖4中的虛線箭頭所示會經由貫通孔152流入至上方空間SP2並形成上升流F2。該上升流F2係進一步地經由基板S的下表面折回至基板S的上表面側。因此,若微粒從下方空間SP1或上方空間SP2藉由上升流F2而被搬運至基板S的上表面側,則可能會再次附著在形成於基板S的上表面的微細圖案。而且,上升流F2係擾亂沿著基板S的上表面流動之處理流體F3的流動,增加圖案崩塌的發生風險。Fig. 4 is a diagram schematically showing the situation in which the substrate is processed by the processing fluid in the processing chamber in the first embodiment. The difference between the present embodiment and the prior art is that the through-
相對於此,根據第一實施形態,當於處理腔室12內利用處理流體進行處理時,貫通孔152係被插塞構造體71堵住。因此,在下方空間SP1中流動之處理流體F1中流入至貫通孔152之處理流體係如該圖中的實線箭頭所示被插塞構造體71阻擋。藉此,能夠確實地阻止上升流F2的發生,從而無上升流。結果,能夠確實地防止流入至基板S側之處理流體所產生之不良影響(微粒的再次附著以及圖案崩塌),能夠高品質地進行基板處理。On the other hand, according to the first embodiment, when the treatment fluid is used in the
圖5係顯示本發明之基板處理裝置的第二實施形態中之與基板的交接相關之各部的形狀以及位置關係之圖。圖6A以及圖6B係圖5所示之基板處理裝置中的基板的交接動作時的各部的部分放大圖。該第二實施形態與第一實施形態的較大的不同點在於支撐托盤15未豎立設置有基板支撐銷152且上表面151為平坦,且中間移動體70的構成亦不同,其他構成基本上與第一實施形態相同。因此,以下以不同點為中心進行說明,對相同構成附上相同符號並省略構成說明。Fig. 5 is a diagram showing the shapes and positional relationship of each part related to the delivery and transfer of substrates in the second embodiment of the substrate processing apparatus of the present invention. FIGS. 6A and 6B are partially enlarged views of respective parts during the transfer operation of the substrate in the substrate processing apparatus shown in FIG. 5 . The major difference between the second embodiment and the first embodiment is that the
在第二實施形態中,中間移動體70係具有:下方抵接部74,係精加工為可抵接至支撐托盤15的上表面151之形狀;以及上方抵接部75,係從下方抵接部74的上表面向上方突出設置且精加工為可抵接至基板S的下表面之形狀。下方抵接部74係具有較包含所有貫通孔152之基板支撐區域154(參照圖5)的平面尺寸SZ1(參照圖6A)更大之平面尺寸SZ2(參照圖6A)。然後,從鉛直上方觀察時,下方抵接部74係配置成覆蓋基板支撐區域154。另一方面,上方抵接部75係具有與設置於外部的搬運裝置之手部H對應之形狀。亦即,手部H係具有在X方向相互分離之臂AR,且從鉛直上方觀察時具有音叉(tuning fork)形狀。因此,為了避免與手部H的干擾,從鉛直上方觀察時,上方抵接部75係具有由兩個相等長度的平行線以及兩個圓弧所構成之大致橢圓形狀,並且兩個平行線的間隔較臂AR的分離距離窄。而且,上方抵接部75從下方抵接部74突出的突出高度係較臂AR的厚度高。因此,如下文說明般,能夠一邊使中間移動體70位於基板S與支撐托盤15之間,一邊執行與手部H的交接動作以及貫通孔152的密封。In the second embodiment, the intermediate moving
例如圖6B所示,當在中間移動體70載置於支撐托盤15的上表面151之狀態下升降銷37向貫通孔152上升時,在升降銷37的上端部到達貫通孔152的上方開口之階段抵接至中間移動體70的下方抵接部74從而從下方支撐。當維持該支撐狀態且升降銷37進一步通過貫通孔152而穿透支撐托盤15並上升時,如圖6A所示,中間移動體70係與升降銷37一起在鉛直方向Z移動。然後,當升降銷37移動至預先設定之上升端時,中間移動體70的上方抵接部75係被定位於搬入搬出位置P1。藉此,可在藉由升降銷37支撐之中間移動體70與設置於外部的搬運裝置之手部H之間交接基板S。亦即,與手部H交接基板S時,上方抵接部75的整個上表面係抵接至基板S的下表面來加以支撐。For example, as shown in FIG. 6B , when the
另一方面,當升降銷37經由貫通孔152下降至支撐托盤15的下方時,中間移動體70係在從下方支撐基板S的狀態下被載置於支撐托盤15的上表面151。此時,設置於支撐托盤15之貫通孔152係均被中間移動體70的下方抵接部74堵住而得以密封。而且,藉由升降銷37從支撐托盤15向下方離開,在堵住貫通孔152之狀態下支撐托盤15與基板S係可一體地在Y方向移動。然後,將支撐托盤15以懸臂狀態加以支撐之蓋構件13係向+Y方向移動,藉此支撐托盤15、中間移動體70以及基板S係一體地收容於處理空間SP內。而且,藉由蓋構件13向+Y方向移動而堵住開口121,處理空間SP係被密閉。接下來,處理流體係被填充至處理空間SP,當處理空間SP內達到適當的溫度以及壓力時,處理流體係成為超臨界狀態。這樣,基板S係於處理腔室12內被處理流體處理。On the other hand, when the lift pins 37 descend below the
圖7係示意性地顯示第二實施形態中基板於處理腔室內被處理流體處理之情況之圖。在第二實施形態中,當在處理腔室12內利用處理流體進行處理時,貫通孔152係被中間移動體70的下方抵接部74堵住。因此,與第一實施形態同樣地,在下方空間SP1流動之處理流體F1中流入至貫通孔152之處理流體係如該圖中的實線箭頭所示被下方抵接部74阻擋。藉此,能夠確實地阻止上升流F2的發生,從而無上升流。結果,能夠確實地防止流入至基板S側之處理流體所產生之不良影響(微粒的再次附著以及圖案崩塌),能夠高品質地進行基板處理。Fig. 7 is a diagram schematically showing the situation in which the substrate is processed by the processing fluid in the processing chamber in the second embodiment. In the second embodiment, the through
而且,在第二實施形態中,如圖7中的放大圖(虛線部分)所示,對被上方抵接部75支撐之基板S的上表面供給處理流體F3。此處,若變更中間移動體70的構成,例如變更上方抵接部75的突出高度,則能夠調整構成處理空間SP之頂面與基板S的上表面之間的間隔D。因此,藉由與基板S的種類或大小等對應地調整上述間隔D,能夠使處理流體F3的流速以及流量等符合基板S的種類等。結果,能夠應對各種基板S,具有高的通用性。Furthermore, in the second embodiment, as shown in the enlarged view (dotted line portion) in FIG. 7 , the processing fluid F3 is supplied to the upper surface of the substrate S supported by the
而且,在第二實施形態中,雖然藉由從上方觀察時具有大致橢圓形狀之上方抵接部75單體來支撐基板S,但上方抵接部75的形狀或數量等並不限於此,例如亦可如以下說明般藉由複數個支撐銷構成上方抵接部75。而且,亦可事先準備複數種上方抵接部75的高度互不相同之中間移動體70,且可根據基板S的種類選擇性地使用要使用之中間移動體70(第三實施形態)。Moreover, in the second embodiment, although the substrate S is supported by the upper abutting
圖8係顯示使用本發明之基板處理裝置的第三實施形態來處理基板之基板處理系統的一例之俯視圖。圖9係顯示圖8所示之基板處理系統中所使用之中間移動體以及收容這些中間移動體之容器的構成之圖。基板處理系統100為例如為葉片式的裝置,設置於無塵室內且用以逐片地處理僅一方的主面形成有微細圖案的基板S。如圖8所示,基板處理系統100係具備:處理部110,係具有與本發明的基板處理裝置的第三實施形態相當的基板處理裝置1以及移動體清洗裝置3,移動體清洗裝置3係用以清洗在基板處理裝置1中所使用的中間移動體70;以及索引(indexer)部120,係與處理部110結合。索引部120係具備:容器保持部123,係能夠保持用以收容基板S之基板用容器CS(以密閉狀態收容複數個基板S之FOUP(Front Opening Unified Pod;前開式晶圓盒)、SMIF(Standard Mechanical Interface;標準機械介面)盒、OC(Open Cassette;開放式晶匣)等)以及用以收容中間移動體70之移動體用容器CM;以及索引機器人122,係存取被該容器保持部123保持之基板用容器CS以及移動體用容器CM,用以將未處理的基板S從基板用容器CS取出、將處理過的基板S收納至基板用容器CS、將使用前的中間移動體70從移動體用容器CM取出、將清洗過的中間移動體70收納至移動體用容器CM等。基板用容器CS中以大致水平姿勢收容有複數塊基板S。另一方面,如圖9所示,在下方抵接部74的上表面豎立設置有複數個支撐銷751作為上方抵接部75之中間移動體70係以支撐銷751朝向上方之水平姿勢收容於移動體用容器CM中。該基板處理系統100中,為了應對各種各樣的基板S,將具有彼此突出高度互不相同的支撐銷751之複數種中間移動體70收容於移動體用容器CM。FIG. 8 is a plan view showing an example of a substrate processing system for processing a substrate using a third embodiment of the substrate processing apparatus of the present invention. FIG. 9 is a diagram showing the configuration of intermediate moving bodies used in the substrate processing system shown in FIG. 8 and containers for accommodating these intermediate moving bodies. The
索引機器人122係具備:基底部122a,係固定於裝置殼體;多關節臂122b,係相對於基底部122a可繞鉛直軸旋動地設置以及手部122c,係安裝於多關節臂122b的前端。手部122c係成為能夠在上表面載置並保持基板S或中間移動體70之構造。這種具有多關節臂以及基板保持用的手部之索引機器人係眾所周知,因此省略詳細說明。The
處理部110係具備:搬運機器人111,係俯視時配置於大致中央;基板處理裝置1以及移動體清洗裝置3,係以包圍該搬運機器人111之方式配置。具體而言,相對於配置有搬運機器人111之空間,以三個基板處理裝置1與一個移動體清洗裝置3面對面的方式配置。搬運機器人111係隨機存取這些基板處理裝置1並交接基板S,且對移動體清洗裝置3交接中間移動體70。另一方面,基板處理裝置1係與第二實施形態之基板處理裝置1同樣地對基板S執行預定的處理,移動體清洗裝置3係對基板處理裝置1中所使用之中間移動體70執行清洗處理。另外,基板處理裝置1係除了中間移動體70的上方抵接部75為銷構造這一點除外,與本發明的第二實施形態(圖5)相同,移動體清洗裝置3係能夠使用以葉片方式清洗半導體晶圓等之裝置,因此此處省略基板處理裝置1以及移動體清洗裝置3的詳細構成說明。The
在如此構成之基板處理系統100中,省略圖示之控制裝置係根據預先規定了基板S的種類以及處理內容等之處方(recipe)如以下般控制系統各部。以下,參照圖10以及圖11A至圖11E對處理第n片基板S之動作的概要進行說明。In the
圖10係顯示藉由圖8所示之基板處理系統處理基板之動作之圖。而且,圖11A至圖11E係顯示在圖8所示之基板處理系統中所裝備之基板處理裝置中所執行之動作之圖。更詳細而言,圖11A係示意性地顯示中間移動體的接取動作之圖,圖11B係示意性地顯示用以交接基板之準備動作之圖,圖11C係示意性地顯示基板的接取動作之圖,圖11D係示意性地顯示用以將基板以及中間移動體收容於處理腔室之準備動作之圖,圖11E係示意性地顯示基板以及中間移動體向處理腔室之收容動作之圖。FIG. 10 is a diagram showing the operation of processing a substrate by the substrate processing system shown in FIG. 8 . Moreover, FIGS. 11A to 11E are diagrams showing operations performed in a substrate processing apparatus equipped in the substrate processing system shown in FIG. 8 . In more detail, FIG. 11A is a diagram schematically showing the receiving operation of the intermediate mobile body, FIG. 11B is a diagram schematically showing the preparation operation for transferring the substrate, and FIG. 11C is a diagram schematically showing the receiving operation of the substrate. Figure 11D schematically shows the preparatory action for storing the substrate and the intermediate moving body in the processing chamber, and Figure 11E schematically shows the storage operation of the substrate and the intermediate moving body in the processing chamber picture.
於處理第n片基板S之情形下,控制裝置係讀取與該第n片基板S對應之處方,使用三台基板處理裝置1中的一台(以下稱為「基板處理裝置1A」)並利用處理流體來處理基板S。更具體而言,控制裝置係依據所讀取之處方來控制系統各部,執行以下的一連串動作。In the case of processing the nth substrate S, the control device reads the position corresponding to the nth substrate S, uses one of the three substrate processing apparatuses 1 (hereinafter referred to as “
與處方對應之中間移動體70係從移動體用容器CM被交接至基板處理裝置1A(步驟S1)。更詳細而言,與上述處方對應之中間移動體70係例如具有突出高度H1的支撐銷751之中間移動體70藉由索引機器人122從移動體用容器CM選擇性地被取出,搬運至處理部110而暫時地載置於緩衝器112。然後,搬運機器人111係存取緩衝器112且用手部H接取中間移動體70。在本實施形態中,經由緩衝器112在索引機器人122與搬運機器人111之間交接中間移動體70,亦可於索引機器人122與搬運機器人111之間直接交接中間移動體70。就該點而言,關於基板S的交接亦同樣。這樣接取到中間移動體70之搬運機器人111的手部H係存取基板處理裝置1A並如圖11A所示搬入至基板處理裝置1A。此時,升降銷37的上端部係被定位於較搬入搬出位置P1更低的位置,該定位狀態下中間移動體70搬入至搬入搬出位置P1。接下來,升降銷37係上升而將中間移動體70提升至較搬入搬出位置P1更上方,並從手部H接取中間移動體70。The intermediate
在中間移動體70的交接後,如圖11B所示,搬運機器人111的手部H從基板處理裝置1A退避,並且在支撐中間移動體70之狀態下升降銷37下降以使中間移動體70的支撐銷751的上端部較搬入搬出位置P1更低。這樣,執行第n片基板S的交接準備(步驟S2)。After the transfer of the intermediate
與上述交接準備並行地,第n片基板S係藉由索引機器人122從基板用容器CS被取出,搬運至處理部110而暫時地載置於緩衝器112。然後,於基板S的交接準備完成之時間點,搬運機器人111存取緩衝器112且用手部H接取基板S後,搬運機器人111的手部H係存取基板處理裝置1A並如圖11C所示搬入至基板處理裝置1A。此時,支撐銷751的上端部係被定位於較搬入搬出位置P1更低之位置,該定位狀態下基板S係被搬入至搬入搬出位置P1。接下來,隨著升降銷37的上升,中間移動體70的支撐銷751係將基板S提升至較搬入搬出位置P1更上方,從手部H接取基板S(步驟S3)。藉此,形成被中間移動體70的支撐銷751支撐基板S之積層體,升降銷37係從下方支撐該積層體。In parallel with the transfer preparation described above, the n-th substrate S is taken out from the substrate container CS by the
為了將該積層體(=中間移動體70+基板S)載置於支撐托盤15並收容於處理腔室12,在支撐積層體之狀態下升降銷37係經由貫通孔152下降(參照圖11D)。然後,當升降銷37移動至較貫通孔152更下方時,中間移動體70係在從下方支撐基板S之狀態下載置於支撐托盤15的上表面151。此時,設置於支撐托盤15之貫通孔152係均被中間移動體70的下方抵接部74堵住而得以密封。而且,因升降銷37從支撐托盤15向下方離開,在堵住貫通孔152之狀態下支撐托盤15與基板S係可一體地在Y方向移動(步驟S4:基板+中間移動體的收容準備完成)。另外,與這種收容準備並行地,如圖11D所示,搬運機器人111的手部H從基板處理裝置1A退避。In order to place this laminate (=intermediate moving
下一個步驟S5中,將支撐托盤15以懸臂狀態加以支撐之蓋構件13向+Y方向移動(參照圖11E)。藉此,支撐托盤15、中間移動體70以及基板S係一體地收容至處理空間SP內。而且,因蓋構件13向+Y方向移動而堵住開口121,從而處理空間SP得以密閉。接下來,處理流體被填充至處理空間SP,當處理空間SP內達到適當的溫度以及壓力時,處理流體係成為超臨界狀態。這樣,基板S係於處理腔室12內被處理流體處理(步驟S6)。In the next step S5, the
當處理流體所進行之處理完成時,蓋構件13向-Y方向移動。藉此,支撐托盤15、中間移動體70以及基板S係一體地被從處理空間SP被取出(步驟S7)。接下來,升降銷37係經由貫通孔152上升,從支撐托盤15一體地提升積層體(=使用過的中間移動體70+處理過的基板S)並使基板S位於搬入搬出位置P1的上方位置。接下來,搬運機器人111的手部H係存取基板處理裝置1A而位於搬入搬出位置P1後,升降銷37下降。藉此,於搬入搬出位置P1處,基板S係從中間移動體70被交接至手部H。然後,接取到處理過的基板S之搬運機器人111係以與未處理的基板S的搬入相反之順序返回到基板用容器CS(步驟S8)。When the treatment by the treatment fluid is completed, the
如上述般搬出處理過之基板S後,使用過之中間移動體70係停留於升降銷37上。因此,在本實施形態中,將中間移動體70交接至移動體清洗裝置3(步驟S9),且由移動體清洗裝置3清洗(步驟S10)後,使清洗過之中間移動體70回到移動體用容器CM以備下一次使用(步驟S11)。另外,從基板處理裝置1A取出中間移動體70的動作係藉由與從手部H交接至升降銷37的動作相反之動作來執行。而且,從基板處理裝置1A向移動體清洗裝置3的交接係僅由搬運機器人111執行,使清洗過之中間移動體70從移動體清洗裝置3回到移動體用容器CM之動作係與步驟S8同樣地,藉由搬運機器人111、緩衝器112以及索引機器人122來執行。After the processed substrate S is carried out as described above, the used intermediate moving
而且,與由搬運機器人111從基板處理裝置1A向移動體清洗裝置3之交接並行地,開始用以處理第(n+1)片基板S之順序。In parallel with the transfer from the
如以上般,在第三實施形態之基板處理裝置1A中,可獲得與第二實施形態相同之作用功效。並且,於清洗使用過之中間移動體70後以供再利用。因此,能夠提高中間移動體70的利用效率,降低運轉成本(running cost)。As described above, in the
另外,在第三實施形態中,使用設置有支撐銷751作為上方抵接部75之中間移動體70(圖9),亦可使用第二實施形態中所使用之中間移動體70(圖5)。In addition, in the third embodiment, the intermediate moving body 70 ( FIG. 9 ) provided with the
在上述實施形態中,支撐托盤15係相當於本發明的「基板支撐部」的一例。移載單元30係相當於本發明的「移載機構」的一例。基板用容器CS以及移動體用容器CM係分別相當於本發明的「基板收容部」以及「移動體收容部」的一例。搬運機器人111以及索引機器人122係相當於本發明的「搬運裝置」的一例。In the above-mentioned embodiment, the
另外,本發明不限於上述實施形態,只要不脫離其主旨則可進行上述以外之各種變更。例如,上述實施形態的處理腔室12係於內部的處理空間SP執行超臨界乾燥處理。然而,本發明的技術思想亦可應用於其他的基板處理。尤其,本發明亦能夠應用於如下基板處理裝置:將處理對象的基板載置於支撐托盤並搬入至處理腔室內,因處理中設置於支撐托盤之升降銷用的貫通孔的存在而有可能從支撐托盤的下方側產生上升流。In addition, this invention is not limited to the said embodiment, Unless it deviates from the summary, various changes other than the above can be made. For example, the
而且,在上述第二實施形態以及第三實施形態中,雖然藉由將中間移動體70載置於支撐托盤15的上表面151從而用下方抵接部74的下表面堵住設置於支撐托盤15之貫通孔152,然而亦可與第一實施形態同樣地,從下方抵接部74的下表面向下方突出設置可插入至貫通孔152之柱狀構件。Moreover, in the above-mentioned second embodiment and third embodiment, although the intermediate moving
而且,在上述實施形態中,雖然支撐托盤15安裝於蓋構件13的側面且一體地移動,但不限於此。例如,亦可為支撐托盤獨立於蓋構件而移動之構成。該情形下,蓋構件亦可為相對於處理腔室的開口開閉自如地安裝之門狀的構件。Moreover, in the above-mentioned embodiment, although the
而且,上述實施形態的處理中所使用之各種化學物質係顯示一部分的例子,只要符合上述本發明的技術思想,則可使用各種化學物質來代替。In addition, the various chemical substances used in the processing of the above-mentioned embodiment are some examples, and various chemical substances may be used instead as long as it conforms to the technical idea of the present invention described above.
上述本發明的各態樣所具有之複數個構成要素並非全部為必須,用以解決上述課題的一部分或全部、或者用以達成本說明書中記載之功效的一部分或全部,而適當地對前述複數個構成要素的一部分構成要素進行變更、刪除、與新的其他構成要素之替換、限定內容的一部分刪除。而且,用以解決上述課題的一部分或全部、或者用以達成本說明書中記載之功效的一部分或全部,亦可將上述本發明的一態樣所包含之技術特徵的一部分或全部與上述本發明的其他態樣所包含之技術特徵的一部分或全部組合,形成本發明的獨立的一個形態。Not all of the plurality of constituent elements of the above-mentioned aspects of the present invention are essential, and they are used to solve some or all of the above-mentioned problems, or to achieve some or all of the effects described in this specification, and the above-mentioned plural A part of a constituent element is changed, deleted, replaced with a new other constituent element, and a part of a limited content is deleted. Furthermore, in order to solve part or all of the above-mentioned problems, or to achieve part or all of the effects described in this specification, part or all of the technical features included in the above-mentioned aspect of the present invention may be combined with the above-mentioned present invention. A part or all of the technical features included in other aspects of the invention form an independent form of the present invention.
本發明可應用於使用處理流體處理基板之所有的基板處理技術。The present invention is applicable to all substrate processing techniques that use processing fluids to process substrates.
1,1A:基板處理裝置 3:移動體清洗裝置 10:處理單元 11:基座 12:處理腔室 13:蓋構件 15:支撐托盤(基板支撐部) 30:移載單元(移載機構) 31:本體 33:升降構件 35:基底構件 37:升降銷 50:供給單元 51:升降機構 53:進退機構 55:流體回收部 57:流體供給部 70:中間移動體 71:插塞構造體 72:柱狀構件 73:傘構件 74:下方抵接部 75:上方抵接部 90:控制單元 91:CPU 92:記憶體 93:儲存器 94:介面 100:基板處理系統 110:處理部 111:搬運機器人(搬運裝置) 120:索引部 121:開口 122:索引機器人(搬運裝置) 122a:基底部 122b:多關節臂 122c:手部 123:容器保持部 151:(基板支撐部的)上表面 152:貫通孔 153:基板支撐銷 154:基板支撐區域 731:突起部位 751:支撐銷 AR:臂 CM:移動體用容器(移動體收容部) CS:基板用容器(基板收容部) D:間隔 F1,F3:處理流體 F2:上升流 H:手部 P1:搬入搬出位置 P2:基板支撐位置 P3:高度位置 S:基板 SP:處理空間 SP1:下方空間 SP2:上方空間 SZ1:(基板的)平面尺寸 SZ2:(下方抵接部的)平面尺寸 X,Y:方向 Z:鉛直方向 1,1A: Substrate processing device 3: Mobile body cleaning device 10: Processing unit 11: base 12: Processing chamber 13: cover member 15: Support tray (substrate support part) 30: transfer unit (transfer mechanism) 31: Ontology 33: lifting components 35: Base member 37:Lift pin 50: supply unit 51: Lifting mechanism 53:Advance and retreat mechanism 55: Fluid Recovery Department 57: Fluid supply part 70: Intermediate moving body 71: Plug structure 72: columnar components 73: Umbrella member 74: Bottom contact part 75: upper abutment part 90: Control unit 91:CPU 92: memory 93: Storage 94: interface 100: Substrate processing system 110: processing department 111: Handling robot (handling device) 120: Index Department 121: opening 122: Index robot (handling device) 122a: Basal part 122b: multi-joint arm 122c: hand 123: container holding part 151: the upper surface (of the substrate support part) 152: Through hole 153: Substrate support pin 154: substrate support area 731: protruding part 751: support pin AR: arm CM: Container for mobile objects (mobile object storage unit) CS: Substrate container (substrate storage unit) D: Interval F1, F3: process fluid F2: Upwelling H: hand P1: Moving in and out position P2: Substrate support position P3: height position S: Substrate SP: Processing Space SP1: Space below SP2: Upper Space SZ1: (substrate) plane size SZ2: Plane dimension (of the lower contact part) X, Y: direction Z: vertical direction
[圖1]係顯示本發明之基板處理裝置的第一實施形態的概略構成之圖。 [圖2]係顯示圖1所示之基板處理裝置中之與基板的交接相關之各部的形狀以及位置關係之圖。 [圖3A]係圖1所示之基板處理裝置中的基板的交接動作時的各部的部分放大圖。 [圖3B]係圖1所示之基板處理裝置中的基板的交接動作時的各部的部分放大圖。 [圖4]係示意性地顯示第一實施形態中在處理腔室內利用處理流體來處理基板之情況之圖。 [圖5]係顯示本發明之基板處理裝置的第二實施形態中之與基板的交接相關之各部的形狀以及位置關係之圖。 [圖6A]係圖5所示之基板處理裝置中的基板的交接動作時的各部的部分放大圖。 [圖6B]係圖5所示之基板處理裝置中的基板的交接動作時的各部的部分放大圖。 [圖7]係示意性地顯示第二實施形態中在處理腔室內利用處理流體來處理基板之情況之圖。 [圖8]係顯示使用本發明之基板處理裝置的第三實施形態來處理基板之基板處理系統的一例之俯視圖。 [圖9]係顯示圖8所示之基板處理系統中所使用之中間移動體以及收容這些中間移動體之容器的構成之圖。 [圖10]係顯示藉由圖8所示之基板處理系統來處理基板之動作之圖。 [圖11A]係示意性地顯示中間移動體的接取動作之圖。 [圖11B]係示意性地顯示用以交接基板之準備動作之圖。 [圖11C]係示意性地顯示基板的接取動作之圖。 [圖11D]係示意性地顯示用以將基板以及中間移動體收容於處理腔室之準備動作之圖。 [圖11E]係示意性地顯示基板以及中間移動體向處理腔室的收容動作之圖。 [ Fig. 1 ] is a diagram showing a schematic configuration of a first embodiment of a substrate processing apparatus of the present invention. [ Fig. 2] Fig. 2 is a diagram showing the shape and positional relationship of each part related to transfer of a substrate in the substrate processing apparatus shown in Fig. 1 . [ Fig. 3A] Fig. 3A is a partially enlarged view of each part during a transfer operation of a substrate in the substrate processing apparatus shown in Fig. 1 . [ Fig. 3B] Fig. 3B is a partially enlarged view of each part during a transfer operation of a substrate in the substrate processing apparatus shown in Fig. 1 . [ Fig. 4 ] is a diagram schematically showing a state in which a substrate is processed with a processing fluid in a processing chamber in the first embodiment. [FIG. 5] It is a figure which shows the shape and positional relationship of each part concerning board|substrate transfer in the 2nd embodiment of the substrate processing apparatus of this invention. [FIG. 6A] It is a partial enlarged view of each part in the substrate processing apparatus shown in FIG. 5 at the time of the substrate transfer operation. [ Fig. 6B] Fig. 6B is a partially enlarged view of each part during a transfer operation of a substrate in the substrate processing apparatus shown in Fig. 5 . [ Fig. 7 ] is a diagram schematically showing a state in which a substrate is processed with a processing fluid in a processing chamber in a second embodiment. [FIG. 8] It is a top view which shows an example of the substrate processing system which processes a substrate using the 3rd embodiment of the substrate processing apparatus of this invention. [ Fig. 9] Fig. 9 is a diagram showing configurations of intermediate moving bodies used in the substrate processing system shown in Fig. 8 and containers for accommodating these intermediate moving bodies. [ Fig. 10 ] is a diagram showing an operation of processing a substrate by the substrate processing system shown in Fig. 8 . [FIG. 11A] is a diagram schematically showing the pick-up operation of the intermediate mobile body. [ Fig. 11B ] is a diagram schematically showing a preparation operation for transferring substrates. [FIG. 11C] is a diagram schematically showing the receiving operation of the substrate. [ FIG. 11D ] is a diagram schematically showing a preparatory operation for housing a substrate and an intermediate moving body in a processing chamber. [ Fig. 11E ] is a diagram schematically showing the storage operation of the substrate and the intermediate moving body into the processing chamber.
12:處理腔室 12: Processing chamber
13:蓋構件 13: cover member
15:支撐托盤 15: Support tray
70:中間移動體 70: Intermediate moving body
71:插塞構造體 71: Plug structure
152:貫通孔 152: Through hole
153:基板支撐銷 153: Substrate support pin
F1,F3:處理流體 F1, F3: process fluid
F2:上升流 F2: Upwelling
S:基板 S: Substrate
SP:處理空間 SP: Processing Space
SP1:下方空間 SP1: Space below
SP2:上方空間 SP2: Upper Space
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