TW202313636A - New organosilicon compound, new crosslinking agent, curable composition, prepreg, laminate body, metal-clad laminate, and circuit board - Google Patents

Abstract

The present invention provides: a novel organosilicon compound suitable for use as a crosslinking agent or the like; a novel crosslinking agent; a curable composition; a prepreg; a laminate; a metal-clad laminated board; and a wiring board. The organosilicon compound is represented by formula (1m). (In the formula, M is a single bond or an optionally substituted alkylene group having 1-20 carbon atoms. The benzene ring may have a substituent group. The position of substitution of the vinyl group on the benzene ring is a meta position. n is an integer between 2 and 4. R is a hydrogen atom, a hydroxyl group or an organic group, and if R is an organic group, an atom that bonds to Si is C.).

Description

Novel organosilicon compounds, novel crosslinking agents, curable compositions, prepregs, laminates, metal-clad laminates and wiring boards

The present invention relates to a novel organosilicon compound, a novel crosslinking agent, a curable composition, a prepreg, a laminate, a metal-clad laminate and a wiring substrate.

Wiring boards (also called printed wiring boards) are used for electrical equipment and electronic equipment. The wiring board can be manufactured, for example, as follows. A prepreg is produced by impregnating a curable composition into a fiber base material and (semi)curing the curable composition. One or more prepregs are sandwiched between a pair of metal foils to obtain a first temporary laminate, and the first temporary laminate is heated and pressed to produce a metal-clad laminate. Conductive patterns such as wiring (also referred to as circuit patterns) are formed using the metal foil positioned on the outermost surface of the metal-clad laminate. The metal foil on the outermost surface may be arranged only on one side of the first temporary laminate.

A multilayer wiring board (also called a multilayer printed wiring board) can be manufactured by laminating one or more prepregs on the obtained wiring board and sandwiching them with a pair of metal foils to obtain a second temporary buildup body, the second temporary laminate is heated and pressed, and conductive patterns such as wiring are formed using the metal foil located on the outermost surface. The metal foil on the outermost surface may be arranged only on one side of the second temporary laminate.

The heated and pressed material of prepreg includes fiber base material, resin and inorganic filler (also called filler), etc., also known as composite base material. In a wiring board, the composite base material functions as an insulating layer. The resin contained in the prepreg is the (semi) cured product of the curable composition, and the resin contained in the composite substrate is the cured product of the curable composition.

In recent years, in applications such as portable electronic devices, communication has been increasing in speed and capacity, and the frequency of signals has been increasing. For a wiring board used for this purpose, it is required to reduce transmission loss in a high-frequency region. Transmission loss mainly includes: conductor loss caused by the surface resistance of the metal foil, and dielectric loss caused by the dielectric loss factor (D _f ) of the composite substrate. Therefore, reduction of the dielectric loss in the high-frequency region is required for the resin contained in the composite base material of the wiring board used for the above-mentioned application. The dielectric loss factor (D _f ) usually depends on the frequency, and the higher the frequency of the same material, the larger the dielectric loss factor (D _f ) tends to be. The resin contained in the composite substrate preferably has a low dielectric loss factor (D _f ) under high frequency conditions.

If the difference between the coefficient of thermal expansion (CTE) of the prepreg or the composite substrate and the metal foil is large, the first temporary laminate containing the prepreg and the metal foil, or the composite substrate, prepreg, and metal When the second temporary laminate of foil is heated and pressed, there is a possibility that the metal foil may shift or be peeled off. The difference in coefficient of thermal expansion (CTE) between the prepreg or the composite substrate and the metal foil is preferably small. Since the coefficient of thermal expansion (CTE) of the resin is generally greater than that of the metal foil, it is preferred that the coefficient of thermal expansion (CTE) of the prepreg and the composite substrate be smaller.

Wiring substrates are sometimes used in environments with relatively high temperatures. In order to secure the reliability of the wiring board also in this case, it is preferable that the resin contained in the prepreg and the composite base material have a sufficiently high glass transition temperature (Tg).

In wiring boards, the adhesion between the composite base material and the metal foil is important. Conventionally, there is a technique of roughening the surface of the metal foil on the side of the composite substrate to improve the adhesion between the composite substrate and the metal foil. However, this technique is prone to loss of high-frequency current, which is not good. Patent Document 1 discloses a resin composition for wiring boards and a resin composition for wiring boards using the same as a technique for improving the adhesiveness between the composite base material and the metal foil without roughening the surface of the metal foil on the side of the composite base material. The obtained wiring board (request items 1-4), the resin composition for wiring board contains: polyphenylene ether resin containing polyphenylene ether and trienyl isocyanurate, and trimethoxyvinylsilane (TMVS) And vinyl silanes such as triethoxy vinyl silane (TEVS). [Prior Art Literature] [Patent Document]

[Patent Document 1] Japanese Patent Laid-Open No. 2004-259899 [Patent Document 2] Specification of Korean Patent No. 10-1481417 [Non-patent literature]

[Non-Patent Document 1] JOURNAL OF POLYMER SCIENCE, PART A: POLYMER CHEMISTRY 2015, 53, 1707 - 1718. [Non-Patent Document 2] J. Org. Chem. 2013, 78, 3329 - 3335.

[Problem to be solved by the invention]

Vinylsilanes such as trimethoxyvinylsilane (TMVS) and triethoxyvinylsilane (TEVS) used in Patent Document 1 are silane coupling agents containing a bond between Si and an oxygen atom (O) as a polar atom. The inventors of the present invention conducted research and found that when a silane coupling agent containing a bond between Si and an oxygen atom (O) as a polar atom is added to the curable composition, the obtained composite substrate has dielectric properties. Tendency to increase loss factor (D _f ).

The inventors of the present invention have found that an organosilicon compound with a specific chemical structure that contains more than two reactive vinyl groups and does not contain a bond between Si and a polar atom can be used as a crosslinking agent for a curable composition. The composite base material obtained from the curable composition effectively reduces the dielectric loss factor (D _f ) under high-frequency conditions, the coefficient of thermal expansion (CTE) is sufficiently low, and the glass transition temperature (Tg) is sufficiently high, and it is suitable for the high-frequency region Good characteristics for the wiring board used. Furthermore, in Patent Document 1, the adhesiveness between the composite substrate and the metal foil is improved by using a silane coupling agent, but there is no description or suggestion about using an organosilicon compound as a crosslinking agent.

Non-Patent Documents 1 and 2 and Patent Document 2 can be cited as related technologies of the present invention of other present inventions. In Non-Patent Document 1, an organosilicon compound having two 4-vinylphenyl groups and two alkyl groups (specifically -C ₈ H ₁₇ ) bonded to Si was synthesized. The reaction path diagram is as follows. In Non-Patent Document 1, a synthesized organosilicon compound was polymerized, and the fluorescent properties of the obtained linear polymer were evaluated. In Non-Patent Document 1, the organosilicon compound is used as a monomer, but there is no description or hint about its use as a crosslinking agent, and there is no description about the dielectric properties.

[chemical 1]

In Non-Patent Document 2, an organosilicon compound having two 2-vinylphenyl groups and two alkyl groups (specifically -Me, -Et or -Ph) bonded to Si was synthesized. In Non-Patent Document 2, ring-closing metathesis is performed on the synthesized organosilicon compound to synthesize dibenzo-conjugated seven-membered heterocyclic compounds. The reaction path diagram is as follows. In Non-Patent Document 2, there is no record about the use of organosilicon compounds, there is no record or hint about its use as a crosslinking agent, and there is no record about dielectric properties.

[Chem 2]

In Patent Document 2, a plurality of organosilicon compounds in which two 2-, 3- or 4-vinylphenyl groups and two alkyl groups are substituted on Si were synthesized. An example of the organosilicon compound synthesized in Patent Document 2 is shown in [Chemical 3] below. In Patent Document 2, the organosilicon compound is used as a gas barrier, but there is no description or hint about its use as a crosslinking agent, and there is no description about the dielectric properties.

[Chem 3]

In addition to the above, some organosilicon compounds in which all four atoms bonded to Si are non-polar atoms and have two or more reactive vinyl groups have also been reported. However, there has been no report on the use of an organosilicon compound whose four atoms bonded to Si are all non-polar atoms and has two or more reactive vinyl groups as a crosslinking agent. The 4 atoms bonded to Si are all non-polar atoms and the organosilicon compounds with more than 2 reactive vinyl groups are relatively novel as cross-linking agents. Furthermore, among organosilicon compounds whose four atoms bonded to Si are all non-polar atoms and have two or more reactive vinyl groups, several organosilicon compounds with specific structures are relatively new compounds. Specifically, the 4 atoms bonded to Si are all non-polar atoms, contain more than 2 reactive functional groups including vinylphenyl, and the substitution position of the vinyl group on the benzene ring is meta-position (The benzene ring contained in the organosilicon compound may have a substituent) is relatively novel as a compound.

The present invention was made in view of the above circumstances, and an object of the present invention is to provide a novel organosilicon compound suitable for use as a crosslinking agent or the like. Moreover, the object of the present invention is to provide a kind of suitable for curable composition and can obtain the dielectric dissipation factor (D _f ) under the condition of high frequency to effectively reduce, the coefficient of thermal expansion (CTE) is low enough and the glass transition temperature (Tg) is enough A novel crosslinking agent for highly (semi)cured products and a curable composition using the crosslinking agent. The novel organosilicon compound and novel crosslinking agent of the present invention are suitable for use in curable compositions used in applications such as prepregs, metal-clad laminates, and wiring boards, but can be used in any application. [Technical means to solve the problem]

The present invention provides the following novel organosilicon compounds, novel crosslinking agents, curable compositions, prepregs, laminates, metal-clad laminates and wiring boards.

(上式中，M為單鍵或可具有取代基之碳數1～20之伸烷基；苯環可具有取代基；苯環上之乙烯基之取代位置為間位；n為2～4之整數；R為氫原子、羥基或有機基，於R為有機基時，與Si鍵結之原子為C) [1] An organosilicon compound represented by the following formula (1m). [2] A crosslinking agent represented by the following formula (1m). [chemical 4]

(In the above formula, M is a single bond or an alkylene group with a carbon number of 1 to 20 that may have a substituent; the benzene ring may have a substituent; the substitution position of the vinyl group on the benzene ring is the meta position; n is 2 to 4 Integer; R is a hydrogen atom, a hydroxyl group or an organic group, when R is an organic group, the atom bonded to Si is C)

[3] A curable composition comprising: the crosslinking agent of [2], and a curable compound having two or more crosslinkable functional groups capable of crosslinking with the crosslinking agent. [4] A prepreg comprising: a fiber base material, and a semi-cured or cured product of the curable composition of [3]. [5] A laminate comprising: a substrate, and a curable composition layer containing the curable composition of [3]. [6] A laminate comprising: a substrate, and a semi-cured product containing the curable composition of [3] or a layer containing a (semi)cured product of the cured product. [7] The laminate according to [5] or [6], wherein the base material is a resin film or a metal foil. [8] A metal-clad laminate comprising: an insulating layer containing a cured product of the curable composition of [3]; and a metal foil. [9] A wiring board comprising: an insulating layer comprising a cured product of the curable composition of [3]; and wiring. [Effect of Invention]

According to the present invention, a novel organosilicon compound suitable for use as a crosslinking agent and the like can be provided. According to the present invention, it is possible to provide a compound suitable for curable compositions that can effectively reduce the dielectric loss factor (D _f ) under high frequency conditions, have a sufficiently low coefficient of thermal expansion (CTE), and have a sufficiently high glass transition temperature (Tg). Novel cross-linking agent for (semi)cured products and curable composition using the cross-linking agent.

In this specification, (semi) hardening is a generic term for semi-hardening and hardening. In this specification, "wiring board" includes a multilayer wiring board unless otherwise specified. In this specification, "high frequency region" is defined as a region with a frequency above 1 GHz. In this specification, unless otherwise stated, "number average molecular weight (Mn)" is the number average molecular weight in terms of polystyrene calculated|required by the gel permeation chromatography (GPC) method. In this specification, unless otherwise stated, "~" which shows a numerical range is used in the meaning which includes the numerical value described before and after it as a lower limit and an upper limit. Embodiments of the present invention will be described below.

(上式中，M為單鍵或可具有取代基之碳數1～20之伸烷基；苯環可具有取代基；苯環上之乙烯基之取代位置為間位；n為2～4之整數；R為氫原子、羥基或有機基，於R為有機基時，與Si鍵結之原子為C) [Novel organosilicon compound, novel crosslinking agent] The organosilicon compound of the present invention is represented by the following formula (1m). The organosilicon compound of the present invention is suitable as a crosslinking agent and the like. The crosslinking agent of the present invention is represented by the following formula (1m). [chemical 5]

(In the above formula, M is a single bond or an alkylene group with a carbon number of 1 to 20 that may have a substituent; the benzene ring may have a substituent; the substitution position of the vinyl group on the benzene ring is the meta position; n is 2 to 4 Integer; R is a hydrogen atom, a hydroxyl group or an organic group, when R is an organic group, the atom bonded to Si is C)

The organosilicon compound and crosslinking agent of the present invention can be used for any purpose, and are suitable for curable compositions, prepregs, laminates, metal-clad laminates, wiring boards, and the like.

[hardening composition] The curable composition of the present invention includes the crosslinking agent of the present invention and a curable compound having two or more crosslinkable functional groups capable of crosslinking with the crosslinking agent. The curable composition may be thermosetting or active energy ray curable. The active energy ray curable composition is a composition cured by irradiation with active energy rays such as ultraviolet rays and electron beams. For applications such as metal-clad laminates and wiring boards, thermosetting properties are preferred.

As a curable compound, a monomer, an oligomer, a prepolymer, etc. are mentioned. These can use 1 or more types. Examples of cured products of curable compounds include: polyphenylene ether resin (PPE), bismaleimide resin, epoxy resin, fluororesin, polyimide resin, olefin resin, polyester resin, polyester resin, Styrene resin, hydrocarbon elastomer, benzo㗁𠯤 resin, active ester resin, cyanate resin, butadiene resin, hydrogenated or non-hydrogenated styrene butadiene resin, vinyl resin, cycloolefin polymer, aromatic Polymers, divinyl aromatic polymers, combinations thereof, etc.

In applications such as metal-clad laminates and wiring boards, the cured product of the curable compound preferably contains polyphenylene ether resin (PPE). In this specification, unless otherwise specified, "polyphenylene ether resin (PPE)" includes non-modified polyphenylene ether resin and modified polyphenylene ether resin.

In the above use, as a curable compound, for example, a polyphenylene ether oligomer represented by the following formula (P) is preferable. [chemical 6]

X at both ends of the formula (P) is independently a group represented by the following formula (x1) or the following formula (x2). In this equation, "*" represents a bond with an oxygen atom. [chemical 7]

m is preferably 1-20, more preferably 3-15. n is preferably 1-20, more preferably 3-15.

The (semi)cured product of the curable composition comprises the reaction product of the curable compound and the crosslinker according to the invention.

The number average molecular weight (Mn) of the oligomer is not particularly limited, but is preferably 1000-5000, more preferably 1000-4000.

The curable composition preferably contains one or more polymerization initiators. As the polymerization initiator, organic peroxides, azo compounds, other known polymerization initiators, and combinations thereof can be used. As specific examples, dicumyl peroxide, benzoyl peroxide, cumene hydroperoxide, 2,5-dimethylhexane-2,5-dihydroperoxide, 2 ,5-Dimethyl-2,5-di(tert-butylperoxy)hexyne-3, di-tert-butyl peroxide, tert-butylcumyl peroxide, α, α'-bis(tert-butylperoxy)diisopropylbenzene, 2,5-dimethyl-2,5-bis(tert-butylperoxy)hexane, isophthalic acid peroxide Di-tert-butyl ester, tert-butyl peroxybenzoate, 2,2-bis(tert-butylperoxy)butane, 2,2-bis(tert-butylperoxy)octane, 2,5-Dimethyl-2,5-bis(benzoylperoxy)hexane, bis(trimethylsilyl)peroxide, trimethylsilyltriphenylsilylperoxide And azobisisobutyronitrile, etc.

The curable composition may contain 1 or more types of additives as needed. As an additive, an inorganic filler (it is also called a filler), a compatibilizer, a flame retardant, etc. are mentioned. Examples of the inorganic filler include: metal oxides such as silicon dioxide such as spherical silica, aluminum oxide, titanium oxide, and mica; metal hydroxides such as aluminum hydroxide and magnesium hydroxide; talc; aluminum borate; Barium Sulfate; Calcium Carbonate, etc. These can use 1 or more types. Among them, from the viewpoint of low thermal expansion, silica, mica, talc, etc. are preferable, and spherical silica is more preferable. The inorganic filler can be surface treated with epoxy silane type, vinyl silane type, methacryl silane type, or amino silane type silane coupling agent. The timing of the surface treatment with the silane coupling agent is not particularly limited. Inorganic fillers that have been surface-treated with silane coupling agents can be prepared in advance, and silane coupling agents can also be added by integral blending when preparing curable compositions.

As a flame retardant, a halogen type flame retardant, a phosphorus type flame retardant, etc. are mentioned, for example. These can use 1 or more types. Examples of halogen-based flame retardants include brominated flame retardants such as pentabromodiphenyl ether, octabromodiphenyl ether, decabromodiphenyl ether, tetrabromobisphenol A, and hexabromocyclododecane; Chlorine-based flame retardants such as paraffin wax, etc. Examples of phosphorus-based flame retardants include: phosphoric acid esters such as condensed phosphoric acid esters and cyclic phosphoric acid esters; phosphazene compounds such as cyclic phosphazene compounds; melamine-based flame retardants such as melamine phosphate and melamine polyphosphate; phosphine oxide compounds with diphenylphosphine oxide groups, etc.

The curable composition may contain one or more types of organic solvents as needed. Organic solvents are not particularly limited, and examples include: ketones such as methyl ethyl ketone; ethers such as dibutyl ether; esters such as ethyl acetate; amines such as dimethylformamide; benzene, toluene, and xylene Aromatic hydrocarbons such as trichlorethylene; chlorinated hydrocarbons such as trichlorethylene, etc.

In the curable composition, the solid content concentration and component composition can be designed according to the application and the like. In applications such as prepregs, the solid content concentration is preferably from 50 to 90% by mass.

[Prepreg] The prepreg of the present invention includes a fibrous base material and a (semi)cured product of the curable composition of the present invention. The (semi)cured product may optionally contain additives such as inorganic fillers (fillers). The prepreg can be produced by impregnating a curable composition into a fibrous base material and (semi)hardening it by thermosetting or the like.

The material of the fiber substrate is not particularly limited, and examples thereof include inorganic fibers such as glass fibers, silica fibers, and carbon fibers; organic fibers such as aramid fibers and polyester fibers; combinations thereof, and the like. For applications such as metal-clad laminates and wiring boards, glass fibers and the like are preferred. As a form of a glass fiber base material, glass cloth, cellophane, glass mat, etc. are mentioned.

The curing conditions of the curable composition can be set according to the composition of the curable composition, and semi-hardening conditions (conditions of incomplete curing) are preferred. In the case of using a curable composition containing a polyphenylene ether oligomer represented by the above formula (P), thermal curing by heating, for example, at 80 to 180° C. for 1 to 10 minutes is preferred. In applications such as metal-clad laminates and wiring boards, it is preferable to adjust the composition and curing conditions of the curable composition so that the resin content in the obtained prepreg is within the range of 40 to 80% by mass.

[laminated body] The first laminate of the present invention includes: a base material; and a curable composition layer containing the above-mentioned curable composition of the present invention. The second laminate of the present invention includes a substrate and a (semi)cured layer containing a (semi)cured product of the curable composition of the present invention. In the first and second laminates of the present invention, the substrate is not particularly limited, and examples thereof include resin films, metal foils, and combinations thereof. The resin film is not particularly limited, and known ones can be used. The constituent resin of the resin film may, for example, be polyimide, polyethylene terephthalate (PET), polyethylene naphthalate, cycloolefin polymer or polyether sulfide. In the case of low resistance, the metal foil is preferably copper foil, silver foil, gold foil, aluminum foil and combinations thereof, more preferably copper foil or the like.

[Metal-clad laminate] The metal-clad laminate of the present invention includes an insulating layer containing a cured product of the curable composition of the present invention, and a metal foil. The insulating layer may be a layer comprising a fibrous base material and a cured product of the curable composition of the present invention. In the case of low resistance, the metal foil is preferably copper foil, silver foil, gold foil, aluminum foil and combinations thereof, more preferably copper foil or the like. The metal foil may have a metal plating layer on the surface. The metal foil may also be a metal foil with a carrier including an ultra-thin metal foil and a carrier metal foil supporting the ultra-thin metal foil. The metal foil may have at least one surface subjected to surface treatments such as antirust treatment, silane treatment, surface roughening treatment, and barrier forming treatment. The thickness of the metal foil is not particularly limited, but it is preferably 0.1 to 100 μm, more preferably 0.2 to 50 μm, and most preferably 1.0 to 40 μm.

The metal-clad laminate can be a single-sided metal-clad laminate with metal foil on one side, or a double-sided metal-clad laminate with metal foil on both sides, preferably a double-sided metal-clad laminate. A single-sided metal-clad laminate can be produced by laminating one or more of the aforementioned prepregs and metal foil to obtain a first temporary laminate, and heating and pressing the first temporary laminate. A double-sided metal-clad laminate can be produced by sandwiching one or more of the above-mentioned prepregs with a pair of metal foils to obtain a first temporary laminate, and heating and pressing the first temporary laminate. A metal-clad laminate using copper foil as the metal foil is called a copper clad laminate (CCL).

The insulating layer is preferably a heat-pressed product including a prepreg. The heated and pressed material of the prepreg contains a fiber base material and a resin, and optionally contains one or more additives such as an inorganic filler and a flame retardant. The heated and pressed prepreg is also called composite substrate. The heating and pressing conditions of the first temporary laminate are not particularly limited, for example, a temperature of 170 to 250° C., a pressure of 0.3 to 30 MPa, and a time of 3 to 240 minutes are preferable.

1 and 2 show schematic cross-sectional views of metal-clad laminates according to the first and second embodiments of the present invention. The metal-clad laminate 1 shown in FIG. 1 includes a heated and pressed prepreg on one side of a composite base material (layer containing a cured product) 11 containing a cured product of the curable composition of the present invention. One-side metal-clad laminate (laminate) obtained by laminating metal foil (metal layer) 12. The metal-clad laminate 2 shown in FIG. 2 includes a heated and pressed prepreg on both sides of a composite base material (layer containing the cured product) 11 containing a cured product of the curable composition of the present invention. A double-sided metal-clad laminate obtained by laminating metal foil (metal layer) 12.

The metal-clad laminates 1 and 2 may also have layers other than those described above. The metal-clad laminates 1 and 2 may have an adhesive layer between the composite substrate (layer containing hardened material) 11 and the metal foil (metal layer) 12 to improve the adhesiveness. As the material of the adhesive layer, well-known ones can be used, such as: epoxy resin, cyanate resin, acrylic resin, polyimide resin, maleimide resin, adhesive fluororesin and combinations thereof, etc. . Examples of commercially available adhesive fluororesins include "Fluon LM-ETFE LH-8000", "AH-5000", "AH-2000", and "EA-2000" manufactured by AGC Corporation.

The thickness of the composite substrate can be properly designed according to the application. From the viewpoint of preventing disconnection of the wiring board, it is preferably at least 50 μm, more preferably at least 70 μm, and particularly preferably at least 100 μm. From the viewpoint of flexibility, miniaturization, and weight reduction of the wiring board, it is preferably at most 300 μm, more preferably at most 250 μm, and most preferably at most 200 μm.

[Wiring board] The wiring board of the present invention includes an insulating layer containing a cured product of the curable composition of the present invention, and wiring. A wiring board can be manufactured by forming a conductor pattern (circuit pattern) such as wiring using the metal foil positioned on the outermost surface of the above-mentioned metal-clad laminate of the present invention. As a method of forming conductor patterns such as wiring, there may be mentioned a subtractive method in which wiring is formed by etching metal foil, and MSAP (Modified Semi Additive Process) in which wiring is formed on metal foil by plating. addition) method, etc.

FIG. 3 shows a schematic cross-sectional view of a wiring board according to an embodiment of the present invention. The wiring board 3 shown in FIG. 3 is obtained by forming conductor patterns (circuit patterns) 22 such as wiring 22W using the metal foil 12 on at least one outermost surface of the metal-clad laminate 2 of the second embodiment shown in FIG. 2 . The wiring board 3 includes a heated and pressed prepreg, and wiring 22W and the like are formed on at least one side of a composite base material (cured material-containing layer, insulating layer) 11 containing a cured product of the curable composition of the present invention. Conductor pattern (circuit pattern) 22 .

It is also possible to manufacture a multilayer wiring board (also called a multilayer printed wiring board) by further stacking one or more prepregs on the obtained wiring board, sandwiching them with a pair of metal foils, and obtaining a second temporary For the laminate, the second temporary laminate is heated and pressed, and conductive patterns such as wiring are formed using the metal foil on the outermost surface. The metal foil on the outermost surface may be arranged only on one side of the second temporary laminate. The wiring board of the present invention is suitable for use in a high-frequency region (a region with a frequency of 10 GHz or higher).

In recent years, in applications such as portable electronic devices, communication has been increasing in speed and capacity, and the frequency of signals has been increasing. For a wiring board used for this purpose, it is required to reduce transmission loss in a high-frequency region. Therefore, reduction of the dielectric loss in the high-frequency region is required for the resin contained in the composite base material of the wiring board used for the above-mentioned application. The dielectric loss factor (D _f ) usually depends on the frequency, and the higher the frequency of the same material, the larger the dielectric loss factor (D _f ) tends to be. The resin contained in the composite substrate preferably has a low dielectric loss factor (D _f ) under high frequency conditions.

If the difference between the coefficient of thermal expansion (CTE) of the prepreg or the composite substrate and the metal foil is large, the first temporary laminate containing the prepreg and the metal foil, or the composite substrate, prepreg, and metal When the second temporary laminate of foil is heated and pressed, there is a possibility that the metal foil may shift or be peeled off. The difference in coefficient of thermal expansion (CTE) between the prepreg or the composite substrate and the metal foil is preferably small. Since the coefficient of thermal expansion (CTE) of the resin is generally greater than that of the metal foil, it is preferred that the coefficient of thermal expansion (CTE) of the prepreg and the composite substrate be smaller.

Wiring substrates are sometimes used in environments with relatively high temperatures. In order to secure the reliability of the wiring board also in this case, it is preferable that the resin contained in the prepreg and the composite base material have a sufficiently high glass transition temperature (Tg).

The organosilicon compound and crosslinking agent of the present invention are different from the silane coupling agent used in Patent Document 1 cited in [Prior Art], in that the four atoms bonded to Si are all non-polar atoms (specifically, hydrogen atoms or carbon atoms). The inventors of the present invention conducted research and found that, when the organosilicon compound of the present invention is added to a curable composition, the organosilicon compound can be used as a curable compound having two or more crosslinkable functional groups. The crosslinking agent functions to effectively reduce the dielectric dissipation factor (D _f ) of the (semi)cured product of the curable composition. It was also found that the (semi)cured product of the curable composition containing the organosilicon compound of the present invention has a sufficiently low coefficient of thermal expansion (CTE) and a sufficiently high glass transition temperature (Tg). It was also found that the adhesiveness between the (semi)cured product of the curable composition containing the organosilicon compound of the present invention and metals such as copper foil is also good in actual use.

By adding the organosilicon compound of the present invention as a crosslinking agent to the curable composition, the dielectric dissipation factor (D _f ) under high frequency conditions can be effectively reduced, the coefficient of thermal expansion (CTE) is sufficiently low and the glass transition temperature ( Tg) sufficiently high (semi) hardened product. This (semi)cured product is suitable for composite substrates and insulating layers suitable for wiring boards used in high-frequency regions.

The dielectric loss factor (D _f ) under high frequency conditions of the (semi)cured product of the curable composition of the present invention and the composite substrate comprising the (semi)cured product is preferably, for example, within the following range. The dielectric loss factor (D _f ) at a frequency of 10 GHz is preferably smaller, preferably less than 0.01, more preferably less than 0.005, and most preferably less than 0.003. The lower limit is not particularly limited, and is, for example, 0.0001.

The coefficient of thermal expansion (CTE) of the (semi)cured product of the curable composition of the present invention and the composite substrate including the (semi)cured product is preferably, for example, within the following range. The coefficient of thermal expansion (CTE) is preferably smaller, preferably less than 70 ppm/°C, more preferably less than 50 ppm/°C, particularly preferably less than 40 ppm/°C. The lower limit is not particularly limited, and is, for example, 1 ppm/°C.

The glass transition temperature (Tg) of the (semi)cured product of the curable composition of the present invention is preferably at least 150°C, more preferably at least 180°C, particularly preferably at least 200°C. The upper limit is not particularly limited, and is, for example, 300°C.

Dielectric dissipation factor (D _f ), coefficient of thermal expansion (CTE) and glass transition temperature (Tg) can be measured by the method described in the following [Example] section.

In the organosilicon compound of the present invention represented by formula (1m), the benzene ring may have a substituent. Examples of substituents that the benzene ring may have include alkyl groups and aryl groups having 1 to 18 carbon atoms, and from the viewpoint of availability of raw materials, methyl, ethyl, propyl, butyl, and hexyl groups are preferred. , octyl, phenyl and tolyl. The benzene ring preferably has no substituent.

In the organosilicon compound of the present invention represented by the formula (1m), the substitution position of the vinyl group on the benzene ring may include ortho, meta and para positions. In the present invention, the substitution position of the vinyl group on the benzene ring is the meta position. In the case where the above-mentioned substitution position is at the ortho position, the cross-linking reaction may be relatively difficult to proceed compared with the meta-position due to the steric hindrance between the substituted vinyl group in the organosilicon compound and the cross-linking reaction point of the hardening compound. Therefore, physical properties such as the coefficient of thermal expansion (CTE) and glass transition temperature (Tg) of the (semi) cured product of the curable composition may be relatively reduced. Also, since the steric hindrance becomes larger compared with the meta position, it may be difficult to synthesize an organosilicon compound. In the case where the above-mentioned substitution position is the para position, it is different from the meta position, especially under high frequency conditions, it is easy to cause the benzene ring to rotate relative to the axis connecting the silicon atom and the cross-linking point, which may weaken the dielectric loss factor ( D _f ) effect. In the case where the above-mentioned substitution position is meta, even under high-frequency conditions, it is not easy to cause the benzene ring to rotate, so that the dielectric loss of the (semi) cured product of the curable composition can be more effectively reduced under high-frequency conditions. Factor (D _f ). The organosilicon compound whose substitution position is the meta position is easy to obtain raw materials and easy to synthesize. Since the central silicon atom of the organosilicon compound is not too close to the vinyl group, the influence of steric hindrance on the crosslinking reaction point between the vinyl group and the curable compound is small, and the crosslinking reaction of the curable composition is also easy to proceed. The coefficient of thermal expansion (CTE) and glass transition temperature (Tg) of the (semi) cured product of the curable composition are also good. Furthermore, when the above-mentioned substitution position is the meta position, the reason why the dielectric loss factor (D _f ) of the (semi) cured product of the curable composition can be more effectively reduced under high-frequency conditions is not necessarily clear. Conjectures of the present inventors are included.

In the organosilicon compound of the present invention represented by formula (1m), the number n of reactive functional groups (also referred to simply as the number of functional groups) is 2-4. The functional base n may be 2. The functional group n can be 3 or 4.

In the organosilicon compound of the present invention represented by formula (1m), R is a hydrogen atom, a hydroxyl group or an organic group, preferably an alkyl group having 1 to 18 carbon atoms which may have a substituent. In order to more effectively reduce the dielectric loss factor (D _f ) of the (semi) cured product of the curable composition under high frequency conditions, R preferably does not contain polar atoms such as oxygen atoms (O). R is preferably an alkyl group having 1 to 18 carbon atoms having no substituent. More preferably, it is a linear alkyl group having 1 to 18 carbon atoms. When R has a large number of carbon atoms, the polarity of the crosslinked structure decreases, which can more effectively reduce the dielectric loss factor (D _f ) of the (semi) cured product of the curable composition under high frequency conditions, which is preferable. The upper limit of the carbon number is 18 from the viewpoint of easiness of synthesis. In view of the effect of reducing the dielectric loss factor (D _f ) of the (semi) cured product of the curable composition under high frequency conditions and the ease of synthesis, the carbon number of R is more preferably 3 to 18, particularly preferably 8 to 18.

In the organosilicon compound of the present invention represented by formula (1m), M is a single bond or an alkylene group having 1 to 20 carbon atoms which may have a substituent. The upper limit of the carbon number is 20 from the viewpoint of easiness of synthesis. From the viewpoint of the ease of synthesis of the organosilicon compound, M is preferably a single bond or an alkylene group having 1 to 4 carbons, more preferably a single bond or a methylene group.

The organosilicon compound of the present invention represented by the formula (1m) can be synthesized by a known synthesis method. For specific synthesis examples, please refer to the section of [Examples].

As described above, according to the present invention, a novel organosilicon compound suitable for use as a crosslinking agent and the like can be provided. According to the present invention, it is possible to provide a compound suitable for curable compositions that can effectively reduce the dielectric loss factor (D _f ) under high frequency conditions, have a sufficiently low coefficient of thermal expansion (CTE), and have a sufficiently high glass transition temperature (Tg). Novel cross-linking agent for (semi)cured products and curable composition using the cross-linking agent. The novel organosilicon compound and novel crosslinking agent of the present invention are suitable for use in curable compositions used in applications such as prepregs, metal-clad laminates, and wiring boards, but can be used in any application.

[use] The novel organosilicon compound of the present invention is suitable as a crosslinking agent and the like. The crosslinking agent of the present invention is suitable for curable compositions containing curable compounds such as monomers, oligomers and prepolymers. The novel organosilicon compound and novel crosslinking agent of the present invention are suitable for curable compositions used in applications such as prepregs, metal-clad laminates, and wiring boards. The curable composition containing the crosslinking agent of the present invention is suitable as a curable composition used in applications such as prepregs, metal-clad laminates, and wiring boards. The metal-clad laminate of the present invention is suitable for wiring boards and the like used in various electrical equipment and various electronic devices. The wiring substrate of the present invention is suitable for: portable electronic equipment such as mobile phones, smart phones, portable information terminals, and notebook computers; antennas for mobile phone base stations and automobiles; electronic equipment such as servers, routers, and backplanes; wireless Infrastructure; radar for anti-collision, etc.; various sensors (such as automotive sensors such as engine management sensors), etc. The wiring substrate of the present invention is particularly suitable for communication using high-frequency signals, and is suitable for various applications requiring reduction of transmission loss in a high-frequency region. [Example]

The following examples are given to describe the present invention in detail, but the present invention is not limited to these examples. Examples 1 to 3, and 101 are examples, and examples 21, 22, 31, and 32 are comparative examples. Room temperature is around 25°C unless otherwise stated.

[Commercially available reagents] In [Example], regarding catalysts and reagents, unless otherwise specified, commercially available products were directly used for the reaction. As a solvent, a commercially available product that has undergone dehydration and deoxidation was used.

[Evaluation Items and Evaluation Methods of Organosilicon Compounds] (Structure) The structure of the synthesized organosilicon compound was carried out by ¹ H-NMR ( ¹ Hydrogen-Nuclear Magnetic-Resonance, a hydrogen-nuclear magnetic resonance) determination to identify.

(Molecular weight) The molecular weight of the synthesized organosilicon compound was determined by using a gas chromatography mass spectrometer (GC-HRMS) ("7890A/JEOL JMS-T200 AccuTOF GCx-plus" manufactured by Agilent) by electron impact It can be obtained by the method (EI).

[Preparation method of evaluation sample (membrane hardened product)] The following two polyphenylene ether oligomers were prepared as hardening compounds. (SA9000 )2-functional methacrylic acid modified PPE ("SA9000" manufactured by SABIC Corporation), (OPE-2st) Bifunctional chloromethylstyrene-modified PPE ("OPE-2st" manufactured by Mitsubishi Gas Chemical Co., Ltd.).

SA9000 and OPE-2st are represented by the following formulae. [chemical 8]

Use the above-mentioned bifunctional methacrylic acid modified PPE (SA9000) or bifunctional chloromethylstyrene modified PPE (OPE-2st), the organosilicon compound synthesized or prepared in each example, as the second radical polymerization initiator Cumyl peroxide and toluene were mixed at a mass ratio of 7:3:0.1:7, and stirred at room temperature to prepare a toluene solution (curable composition). Next, using an applicator (manufactured by YOSHIMITSU SEIKI), the toluene solution was applied onto a polyimide film having a thickness of 125 μm to form a coating film having a thickness of 250 μm. In an oven, after heating and drying at 80°C for 30 minutes in an air atmosphere, heat at 200°C for 2 hours in a nitrogen atmosphere, thereby thermosetting the coating film (thermal crosslinking reaction), thereby obtaining A sample for evaluation with a thickness of about 100 μm (hardened film). The obtained samples for evaluation were evaluated as follows.

[Evaluation items and evaluation methods of hardened film] (relative permittivity (D _k ) and dielectric loss factor (D _f )) At room temperature, use a vector network analyzer ("E8361C" manufactured by Agilent Technologies) ”), the relative permittivity (D _k ) and dielectric loss factor (D _f ).

(Glass transition temperature Tg) The dynamic viscoelasticity measurement (DMA) of the evaluation sample (film-like cured product) was performed using a dynamic viscoelasticity measurement device ("DVA-200" manufactured by Japan IT Measurement Control Co., Ltd.), and the glass transition temperature (Tg) (°C) was measured ). The measurement is carried out under the conditions of a frequency of 10 Hz, a heating rate of 2°C/min, and a temperature range of 25-300°C.

(coefficient of thermal expansion (CTE)) Measure the coefficient of thermal expansion (CTE) of the evaluation sample (hardened film) at a temperature below the glass transition temperature (Tg) using a thermomechanical analyzer ("TMA/SS7100" manufactured by Seiko Denshi Nanotechnology Co., Ltd.) . The measurement is carried out under the conditions of a heating rate of 5°C/min and a temperature range of -50 to 340°C.

[Example 1] Synthesis of dimethylbis(3-vinylphenyl)silane (C1-D-m-St-Si) <Synthesis of bis(3-formylphenyl)dimethylsilane> under nitrogen atmosphere , Add 3-bromobenzaldehyde diethyl acetal (24.0 g, 90.8 mmol) and tetrahydrofuran (300 mL) into a 500 mL four-neck flask. The solution was cooled to below -65°C, and n-BuLi (n-Butyllithium, n-butyllithium)/n-hexane solution (2.6 mol/L, 35 mL, 91 mmol) was added dropwise thereto over 1 hour, and the Stir at a temperature below 70°C for 2 hours. Dichlorodimethylsilane (4.40 mL, 36.3 mmol) was added dropwise to the obtained reaction solution over 30 minutes, and stirred at the same temperature as above for 2 hours. The flask was warmed to room temperature and stirred over 12 hours. The reaction mixture was quenched with hydrochloric acid (2 mol/L, 120 mL) and stirred at room temperature for 1 hour, and the organic phase was separated. Furthermore, ethyl acetate (100 mL) was added to the aqueous phase, and extraction was performed twice to separate the organic phase. The organic phases obtained by extraction are combined. The combined organic phases were washed with saturated brine (100 mL), dried over magnesium sulfate, filtered, and the filtrate was concentrated under reduced pressure to obtain a crude product. The crude product was purified using silica gel column chromatography (mobile phase: chloroform/n-hexane = 1:2 (volume ratio)), thereby obtaining 8.61 g of bis(3-formylphenyl) dimethicone as a light yellow liquid. Methylsilane (Yield: 88%).

The reaction path diagram and NMR analysis results are as follows. [chemical 9]

¹ H-NMR (CDCl ₃ ): δ (ppm) 10.02 (s, 2H, CHO), 8.02 (s, 2H, Ar - H), 7.90 (td, 2H, J = 7.68, 1.71 Hz, Ar - H) , 7.76 (d, 2H, J = 7.68 Hz, Ar - H), 7.54 (t, 2H, J = 7.68 Hz, Ar - H), 0.66 (s, 6H, Si - CH ₃ ).

＜Synthesis of dimethylbis(3-vinylphenyl)silane＞ Under nitrogen atmosphere, add methyltriphenylphosphonium bromide (25.6 g, 71.1 mmol) and tetrahydrofuran (128 mL). The flask was cooled to 0 °C and potassium tert-butoxide (9.03 g, 80.5 mmol) was added to the suspension. The reaction mixture was stirred at the same temperature as above for 5 more minutes. A solution of bis(3-formylphenyl)dimethylsilane (8.00 g, 29.8 mmol) in tetrahydrofuran (128 mL) was added dropwise to the reaction mixture over 20 minutes. The flask was warmed to room temperature and stirred for 7 hours. After adding 4-tert-butylcatechol (0.60 mg) to the reaction mixture, it was concentrated at 30° C. under reduced pressure. Water (200 mL) and diethyl ether (200 mL) were added to the obtained mixture, and the organic phase was separated for extraction. Furthermore, diethyl ether (200 mL) was added to the aqueous phase, and extraction was performed twice to separate the organic phase. The organic phases obtained by extraction are combined. The combined organic phases were dried over magnesium sulfate, filtered, and the filtrate was concentrated under reduced pressure to obtain a crude mixture. To the crude mixture were added n-hexane (160 mL) and diethyl ether (40 mL), and stirred for 30 minutes. The mixture was filtered using filter paper, and the filtrate was concentrated under reduced pressure to obtain a crude product (oil). The crude product was purified by silica gel column chromatography (mobile phase: n-hexane) to obtain 7.39 g of dimethylbis(3-vinylphenyl)silane (C1-D-m-St-Si) as a colorless liquid (Yield: 94%).

The reaction path diagram, NMR analysis results and HRMS analysis results are as follows. [chemical 10]

¹ H-NMR (CDCl ₃ ): δ (ppm) 8.53 (brs, 2H, Ar - H), 7.46-7.37 (m, 4H, Ar - H), 7.32 (t, 2H, J = 7.68 Hz, Ar - H), 6.71 (dd, 2H, J = 11.10, 17.07 Hz, -CH = CH ₂ ), 5.73 (d, 2H, J = 17.07 Hz, -CH = CH ₂ ), 5.23 (d, 2H, J = 11.10 Hz, -CH = CH ₂ ), 0.56 (s, 6H, Si - CH ₃ ). HRMS (EI): m/z Calcd for (calculated for) C ₁₈ H ₂₀ Si: (M ⁺ ) 264.133, found (found) 264.130.

[Example 2] Synthesis of dodecyltris(3-vinylphenyl)silane (C12-T-m-St-Si) <Synthesis of dodecyltris(3-formylphenyl)silane> in nitrogen Under atmosphere, 3-bromobenzaldehyde diethyl acetal (24.0 g, 90.8 mmol) and tetrahydrofuran (300 mL) were added into a 500 mL four-neck flask. The solution was cooled to below -65°C, n-BuLi/n-hexane solution (2.6 mol/L, 35 mL, 91 mmol) was added dropwise thereto over 1 hour, and the reaction solution was stirred at a temperature below -70°C 2 hours. To the obtained reaction solution, dodecyltrichlorosilane (7.20 mL, 24.2 mmol) was added dropwise over 40 minutes, and stirred at the same temperature as above for 2 hours. The flask was warmed to room temperature and stirred over 12 hours. The reaction mixture was quenched with hydrochloric acid (2 mol/L, 120 mL) and stirred at room temperature for 1 hour, and the organic phase was separated. Furthermore, ethyl acetate (100 mL) was added to the aqueous phase, and extraction was performed twice to separate the organic phase. The organic phases obtained by extraction are combined. The combined organic phases were washed with saturated brine (100 mL), dried over magnesium sulfate, filtered, and the filtrate was concentrated under reduced pressure to obtain a crude product. The crude product was purified by silica gel column chromatography (mobile phase: chloroform/n-hexane=1:1 (volume ratio)) to obtain 10.5 g of dodecyltris(3-formylbenzene) as a colorless liquid base) silane (yield: 85%).

The reaction path diagram and NMR analysis results are as follows. [chemical 11]

¹ H-NMR (CDCl ₃ ): δ (ppm) 10.01 (s, 3H, CHO), 8.00 (brs, 3H, s, Ar - H), 7.97 (td, 3H, J = 7.68, 1.71 Hz, Ar - H), 7.76 (d, 3H, J = 7.68 Hz, Ar - H), 7.58 (t, 3H, J = 7.68 Hz, Ar - H), 1.56 ~ 1.33 (m, 6H, -CH ₂ -), 1.22 (brs, 16H, -CH ₂ -), 0.87 (t, 3H, J = 6.83 Hz, CH ₃ ).

＜Synthesis of dodecyltris(3-vinylphenyl)silane＞ Under nitrogen atmosphere, add methyltriphenylphosphonium bromide (22.6 g, 63.3 mmol) and tetrahydrofuran ( 144 mL). The flask was cooled to 0 °C and potassium tert-butoxide (7.98 g, 71.1 mmol) was added to the suspension. The reaction mixture was stirred at the same temperature as above for 5 more minutes. A solution of dodecyltris(3-formylphenyl)silane (9.00 g, 17.6 mmol) in tetrahydrofuran (144 mL) was added dropwise to the reaction mixture over 20 minutes. The flask was warmed to room temperature and stirred for 1 hour. After adding 4-tert-butylcatechol (2.55 mg) to the reaction mixture, it was concentrated at 30° C. under reduced pressure. Water (200 mL) and diethyl ether (200 mL) were added to the obtained mixture, and the organic phase was separated for extraction. Furthermore, diethyl ether (200 mL) was added to the aqueous phase, and extraction was performed to separate the organic phase. The organic phases obtained by extraction are combined. The combined organic phases were dried over magnesium sulfate, filtered, and the filtrate was concentrated under reduced pressure to obtain a crude mixture. To the crude mixture were added n-hexane (160 mL) and diethyl ether (40 mL), and stirred for 30 minutes. The mixture was filtered using filter paper, and the filtrate was concentrated under reduced pressure to obtain a crude product (red oil). The crude product was purified by silica gel column chromatography (mobile phase: n-hexane) to obtain 6.32 g of dodecyl tris(3-vinylphenyl)silane (C12-T-m-St- Si) (Yield: 71%).

The reaction path diagram, NMR analysis results and HRMS analysis results are as follows. [chemical 12]

¹ H-NMR (CDCl ₃ ): δ (ppm) 7.54 (brs, 3H, Ar - H), 7.48 (d, 3H, J = 6.83 Hz, Ar - H), 7.40 (d, 3H, J = 6.83 Hz , Ar - H), 7.32 (t, 3H, J = 6.83 Hz, Ar - H), 6.69 (dd, 3H, J = 11.10, 17.93 Hz, -CH = CH ₂ ), 5.69 (d, 3H, J = 17.93 Hz, -CH = CH ₂ ), 5.21 (d, 3H, J = 11.10 Hz, -CH = CH ₂ ), 1.52 - 1.42 (m, 2H, -CH ₂ -), 1.42 - 1.32 (m, 4H, -CH ₂ -), 1.32 - 1.11 (m, 16H, -CH ₂ -), 0.87 (t, 3H, J = 6.83 Hz, CH ₃ ). HRMS (EI): m/z Calcd for (calculated for) C ₃₆ H ₄₆ Si: (M ⁺ ) 506.337, found (found) 506.329.

[Example 3] Synthesis of dodecyl tri(vinylbenzyl) silane isomer mixture (C12-T-mp-Bn-Si) Under nitrogen atmosphere, magnesium (cutting flakes, 0.898 g, 36.9 mmol) and diethyl ether (21.1 mL), cooled in an ice bath. Add 4-(chloromethyl)styrene/3-(chloromethyl)styrene mixture (1:1 (molar ratio), 5.12 g, 33.5 mmol) in diethyl ether (10.5 mL) solution. After stirring at the same temperature as above for 1 hour, dodecyltrichlorosilane (3.33 mL, 11.2 mmol) was added dropwise over 20 minutes. The flask was warmed to room temperature and stirred over 12 hours. Water (15 mL) was added to the reaction liquid and stirred for more than 10 minutes, and the organic phase was separated. Furthermore, diethyl ether (30 mL) was added to the aqueous phase, and extraction was performed twice to separate the organic phase. The organic phases obtained by extraction are combined. The combined organic phases were dried over magnesium sulfate, filtered, and the filtrate was concentrated under reduced pressure to obtain the crude product. The crude product was purified by silica gel column chromatography (mobile phase: n-hexane) to obtain 0.319 g of dodecyltris(vinylbenzyl)silane isomer mixture (C12-T-mp -Bn-Si) (yield: 5.2%). According to the analysis results of NMR, the molar ratio of 3-vinylbenzyl and 4-vinylbenzyl in the isomer mixture was estimated to be 1.4:1.6.

The reaction path diagram, NMR analysis results and HRMS analysis results are as follows. [chemical 13]

¹ H-NMR (CDCl ₃ ): δ (ppm) 7.35 ~ 6.81 (m, 12H, Ar - H), 6.74 ~ 6.55 (m, 3H, H - 5, -CH = CH ₂ ), 5.68 (d, 3H , J = 17.1 Hz, -CH = CH ₂ ), 5.20 (d, 1.36H, J = 10.2 Hz, -CH = CH ₂ , metabody), 5.17 (d, 1.64H, J = 11.1 Hz, -CH = CH ₂ , ortho), 2.10 (s, 6H, Si - CH ₂ - Ar), 1.38 - 1.06 (m, 20H, -CH ₂ -), 0.88 (t, 3H, J = 6.83 Hz, CH ₃ ), 0.56 - 0.39 (m, 2H, -CH ₂ -). HRMS (EI): m/z Calcd for (calculated for) C ₃₉ H ₅₂ Si: (M ⁺ ) 548.384, found (found) 548.376.

[Example 21] Synthesis of dimethylbis(4-vinylphenyl)silane (C1-D-p-St-Si) <Synthesis of bis(4-formylphenyl)dimethylsilane> under nitrogen atmosphere , Add 4-bromobenzaldehyde dimethyl acetal (24.0 g, 102 mmol) and tetrahydrofuran (300 mL) into a 500 mL four-neck flask. The solution was cooled to below -65°C, n-BuLi/n-hexane solution (2.6 mol/L, 39 mL, 100 mmol) was added dropwise thereto over 1 hour, and the reaction solution was stirred at a temperature below -70°C 2 hours. Dichlorodimethylsilane (4.93 mL, 40.7 mmol) was added dropwise to the obtained reaction solution over 40 minutes, and stirred at the same temperature as above for 2 hours. The flask was warmed to room temperature and stirred over 12 hours. The reaction mixture was quenched with hydrochloric acid (2 mol/L, 120 mL), and diethyl ether (100 mL) was added to separate the organic phase for extraction. Furthermore, diethyl ether (100 mL) was added to the aqueous phase, and extraction was performed twice to separate the organic phase. The organic phases obtained by extraction are combined. The combined organic phases were washed with saturated brine (100 mL), dried over magnesium sulfate, filtered, and the filtrate was concentrated under reduced pressure to obtain a crude acetal/aldehyde mixture. Add tetrahydrofuran (100 mL) and hydrochloric acid (2 mol/L, 100 mL) to the crude mixture, and heat to reflux for 2 hours. After cooling to room temperature, saturated aqueous sodium bicarbonate solution (240 mL) was added dropwise to the reaction solution. Diethyl ether (100 mL) was added to the reaction liquid, and the organic phase was separated and extracted three times. The organic phases obtained by extraction are combined. The combined organic phases were washed with saturated brine (100 mL), dried over magnesium sulfate, filtered, and the filtrate was concentrated under reduced pressure to obtain a crude product (pale yellow oil). Ethyl acetate/n-hexane mixed solution (1:7 (volume ratio), 120 mL) was added to the crude product, heated to reflux, and then slowly cooled to 0°C. The suspension was filtered, and the obtained solid was dried under reduced pressure to obtain 8.40 g of bis(4-formylphenyl)dimethylsilane (yield: 77%).

The reaction path diagram and NMR analysis results are as follows. [chemical 14]

¹ H-NMR (CDCl ₃ ): δ (ppm) 10.03 (s, 2H, CHO), 7.86 (d, 4H, J = 7.68 Hz, Ar - H), 7.68 (d, 4H, J = 8.54 Hz, Ar - H), 0.64 (s, 6H, Si - CH ₃ ).

＜Synthesis of Dimethylbis(4-vinylphenyl)silane＞ Under nitrogen atmosphere, methyltriphenylphosphonium bromide (25.6 g, 71.7 mmol) and tetrahydrofuran (128 mL) were added into a 500 mL four-necked flask. The flask was cooled to 0 °C and potassium tert-butoxide (9.03 g, 80.5 mmol) was added to the suspension. The reaction mixture was stirred at the same temperature as above for 5 more minutes. A solution of bis(4-formylphenyl)dimethylsilane (8.00 g, 29.8 mmol) in tetrahydrofuran (128 mL) was added dropwise to the reaction mixture over 20 minutes. The flask was warmed to room temperature and stirred for 2 hours. After adding 4-tert-butylcatechol (0.60 mg) to the reaction mixture, it was concentrated at 30° C. under reduced pressure. Water (200 mL) and diethyl ether (200 mL) were added to the obtained mixture, and the organic phase was separated for extraction. Furthermore, diethyl ether (200 mL) was added to the aqueous phase, and extraction was performed to separate the organic phase. The organic phases obtained by extraction are combined. The combined organic phases were dried over magnesium sulfate, filtered, and the filtrate was concentrated under reduced pressure to obtain a crude mixture. To the crude mixture were added n-hexane (160 mL) and diethyl ether (40 mL), and stirred for 30 minutes. The mixture was filtered using filter paper, and the filtrate was concentrated under reduced pressure to obtain a crude product. The crude product was purified by silica gel column chromatography (mobile phase: n-hexane) to obtain 7.27 g of dimethylbis(4-vinylphenyl)silane (C1-D-p-St-Si) as a colorless liquid (Yield: 92%).

The reaction path diagram, NMR analysis results and HRMS analysis results are as follows. [chemical 15]

¹ H-NMR (CDCl ₃ ): δ (ppm) 7.48 (d, 4H, J = 8.54 Hz, Ar - H), 7.38 (d, 4H, J = 7.68 Hz, Ar - H), 6.71 (dd, 2H , J = 11.1, 17.9 Hz, -CH = CH ₂ ), 5.77 (d, 2H, J = 17.1 Hz, -CH = CH ₂ ), 5.25 (d, 2H, J = 10.2 Hz, -CH = CH ₂ ) , 0.54 (s, 6H, Si - CH ₃ ). HRMS (EI): m/z Calcd for (calculated for) C ₁₈ H ₂₀ Si: (M ⁺ ) 264.133, found (found) 264.131. .

[Example 22] Synthesis of dodecyltris(4-vinylphenyl)silane (C12-T-p-St-Si) <Synthesis of dodecyltris(4-formylphenyl)silane> in nitrogen Under atmosphere, add 4-bromobenzaldehyde dimethyl acetal (24.0 g, 102 mmol) and tetrahydrofuran (300 mL) into a 500 mL four-neck flask. The solution was cooled to below -66°C, n-BuLi/n-hexane solution (2.6 mol/L, 39 mL, 100 mmol) was added dropwise thereto over 1 hour, and the reaction solution was stirred at a temperature below -70°C 2 hours. To the obtained reaction solution, dodecyltrichlorosilane (8.08 mL, 27.2 mmol) was added dropwise over 40 minutes, and stirred at the same temperature as above for 2 hours. The flask was warmed to room temperature and stirred over 12 hours. The reaction mixture was quenched with hydrochloric acid (2 mol/L, 120 mL), and diethyl ether (100 mL) was added to separate the organic phase for extraction. Furthermore, diethyl ether (100 mL) was added to the aqueous phase, and extraction was performed to separate the organic phase. The organic phases obtained by extraction are combined. The combined organic phases were washed with saturated brine (100 mL), dried over magnesium sulfate, filtered, and the filtrate was concentrated under reduced pressure to obtain a crude product. The crude product was purified by silica gel column chromatography (mobile phase: chloroform/n-hexane=1:1 (volume ratio)) to obtain 9.53 g of dodecyltris(4-formylbenzene) as a colorless liquid base) silane (yield: 68%).

The reaction path diagram and NMR analysis results are as follows. [chemical 16]

¹ H-NMR (CDCl ₃ ): δ (ppm) 10.06 (s, 3H, CHO), 7.89 (d, 6H, J = 8.54 Hz, Ar - H), 7.67 (d, 6H, J = 8.54 Hz, Ar - H), 1.47 ~ 1.39 (m, 6H, -CH ₂ -), 1.23 (brs, 16H, -CH ₂ -), 0.87 (t, 3H, J = 6.83 Hz, Si - CH ₃ ).

<Synthesis of dodecyltri(4-vinylphenyl)silane> Under nitrogen atmosphere, add methyltriphenylphosphonium bromide (21.3 g, 59.6 mmol) and tetrahydrofuran ( 136 mL). The flask was cooled to 0 °C and potassium tert-butoxide (7.53 g, 67.1 mmol) was added to the suspension. The reaction mixture was stirred at the same temperature as above for 5 more minutes. A solution of dodecyltris(4-formylphenyl)silane (8.50 g, 16.6 mmol) in tetrahydrofuran (136 mL) was added dropwise to the reaction mixture over 20 minutes. The flask was warmed to room temperature and stirred for 1 hour. After adding 4-tert-butylcatechol (2.55 mg) to the reaction mixture, it was concentrated at 30° C. under reduced pressure. Water (200 mL) and diethyl ether (200 mL) were added to the obtained mixture, and the organic phase was separated for extraction. Furthermore, diethyl ether (200 mL) was added to the aqueous phase, and extraction was performed to separate the organic phase. The organic phases obtained by extraction are combined. The combined organic phases were dried over magnesium sulfate, filtered, and the filtrate was concentrated under reduced pressure to obtain a crude mixture. To the crude mixture were added n-hexane (160 mL) and diethyl ether (40 mL), and stirred for 30 minutes. The mixture was filtered using filter paper, and the filtrate was concentrated under reduced pressure to obtain a crude product (yellow oil). The crude product was purified by silica gel column chromatography (mobile phase: n-hexane) to obtain 4.73 g of dodecyltris(4-vinylphenyl)silane (C12-T-p-St- Si) (Yield: 56%).

The reaction path diagram, NMR analysis results and HRMS analysis results are as follows. [chemical 17]

¹ H-NMR (CDCl ₃ ): δ (ppm) 7.47 (d, 6H, J = 7.68 Hz, Ar - H), 7.39 (d, 6H, J = 8.54 Hz, Ar - H), 6.72 (dd, 3H , J = 10.7, 17.5 Hz, -CH = CH ₂ ), 5.79 (d, 3H, J = 17.9 Hz, -CH = CH ₂ ), 5.27 (d, 3H, J = 11.1 Hz, -CH = CH ₂ ) , 1.49 ~ 1.22 (m, 22H, -CH ₂ -), 0.86 (t, 3H, J = 6.40 Hz, CH ₃ ). HRMS (EI): m/z Calcd for (calculated for) C ₃₆ H ₄₆ Si: (M ⁺ ) 506.337, found (found) 506.331.

[Example 31] Trimethoxyvinylsilane (TMVS, a product of TCI Corporation), which is a commercially available silane coupling agent, was prepared as an organosilicon compound for comparison.

[Example 32] Triethoxyvinylsilane (TEVS, a product of TCI Corporation), which is a commercially available silane coupling agent, was prepared as an organosilicon compound for comparison.

[Evaluation and Results] In Examples 1, 2, 21, 22, 31, and 32, the obtained or prepared organosilicon compounds were used to prepare evaluation samples according to the above [Method for making evaluation samples (film-like cured products)] and evaluate them. The evaluation results are shown in Tables 1 to 3.

改性PPE OPE-2st SA-9000 OPE-2st 膜狀硬化物之評估             Dk @10 GHz 2.66 2.63 2.58 Df @10 GHz 0.0023 0.0029 0.0026 CTE[ppm/℃] 39 43 38 Tg[℃] 231 233 232 [Table 1] example 1 Example 21 organosilicon compound C1-Dm-St-Si C1-Dp-St-Si

Modified PPE OPE-2st SA-9000 OPE-2st Evaluation of membranous sclerosis Dk @10 GHz 2.66 2.63 2.58 Df @10 GHz 0.0023 0.0029 0.0026 CTE[ppm/℃] 39 43 38 Tg[°C] 231 233 232

改性PPE SA-9000 OPE-2st SA-9000 膜狀硬化物之評估             Dk @10 GHz 2.49 2.59 2.63 Df @10 GHz 0.0021 0.0019 0.0024 CTE[ppm/℃] 55 57 55 Tg[℃] 217 212 219 [Table 2] Example 2 Example 22 organosilicon compound C12-Tm-St-Si C12-Tp-St-Si

Modified PPE SA-9000 OPE-2st SA-9000 Evaluation of membranous sclerosis Dk @10 GHz 2.49 2.59 2.63 Df @10 GHz 0.0021 0.0019 0.0024 CTE[ppm/℃] 55 57 55 Tg[°C] 217 212 219

[table 3] Example 31 Example 32 organosilicon compound TMVS TEVS Modified PPE SA-9000 OPE-2st SA-9000 OPE-2st Evaluation of membranous sclerosis Dk @10 GHz 2.64 2.76 2.66 2.71 Df @10 GHz 0.0056 0.0076 0.0100 0.0125 CTE[ppm/℃] 48.7 57.9 59.4 69.5 Tg[°C] 232 238 214 194

[Summary of Results] In Examples 1 and 2, an organosilicon compound (organosilicon compound represented by the formula (1m)) in which the substitution position of the vinyl group on the benzene ring is meta-position was used as a crosslinking agent to obtain film-like hardening thing. In Examples 21 and 22, a comparative organosilicon compound whose substitution position of the vinyl group on the benzene ring was at the para position was used as a crosslinking agent to obtain a hardened film. In Examples 31 and 32, a film-like cured product was obtained using a silane coupling agent which is an organosilicon compound for comparison. Compared with Examples 31 and 32 using silane coupling agents, in Examples 1, 2, 21, and 22, the dielectric loss factor (D _f ) under high-frequency conditions can be effectively reduced. According to the comparison between Example 1 and Example 21, and the comparison between Example 2 and Example 22, it can be seen that by using an organosilicon compound whose substitution position of the vinyl group on the benzene ring is meta-position as a crosslinking agent, the high frequency can be reduced more effectively. Dielectric dissipation factor (D _f ) under the condition. In Examples 1 and 2, the dielectric loss factor (D _f ) is effectively reduced under high frequency conditions, and the film-shaped cured product with a sufficiently low coefficient of thermal expansion (CTE) and a sufficiently high glass transition temperature (Tg) can be obtained.

[Example 101] Bifunctional chloromethylstyrene modified PPE (OPE-2st), the organosilicon compound synthesized in Example 1, dicumyl peroxide as a radical polymerization initiator, and spherical Silicon dioxide and toluene were mixed at a mass ratio of 7:3:0.1:10:10 and stirred at room temperature to prepare a curable composition (varnish). The obtained curable composition (varnish) was impregnated in glass cloth (E glass (electrical glass, electrical insulating glass), #2116) as a fiber substrate, and heated at 130°C for 5 minutes to make the curable composition The material is semi-hardened to obtain a prepreg. Two prepregs obtained were stacked, and these prepregs were clamped by a pair of copper foils to obtain a temporary laminate. The temporary laminate was heated at 200°C, 1.5 hours, and 3 MPa. Press to make metal-clad laminates.

The present invention is not limited to the above-mentioned embodiments and examples, and design changes can be appropriately made without departing from the gist of the present invention.

This application claims priority based on Japanese Application Japanese Patent Application No. 2021-094309 filed on June 4, 2021, and the entire disclosure thereof is incorporated herein.

1: Metal-clad laminates 2: Metal-clad laminates 3: Wiring substrate 11: Composite base material 12: metal foil 22: Conductor pattern (circuit pattern) 22W: Wiring

Fig. 1 is a schematic sectional view of a metal-clad laminate according to a first embodiment of the present invention. Fig. 2 is a schematic sectional view of a metal-clad laminate according to a second embodiment of the present invention. Fig. 3 is a schematic cross-sectional view of a wiring board according to an embodiment of the present invention.

1: Metal-clad laminates

11: Composite base material

12: metal foil

Claims (14)

An organosilicon compound represented by the following formula (1m), [Chem. 1]

(In the above formula, M is a single bond or an alkylene group with a carbon number of 1 to 20 that may have a substituent; the benzene ring may have a substituent; the substitution position of the vinyl group on the benzene ring is the meta position; n is 2 to 4 An integer; R is a hydrogen atom, a hydroxyl group or an organic group, and when R is an organic group, the atom bonded to Si is C). The organosilicon compound according to claim 1, wherein R is an alkyl group having 1 to 18 carbons which may have substituents. The organosilicon compound according to claim 1 or 2, wherein M is a single bond or an alkylene group with 1 to 4 carbons. A crosslinking agent represented by the following formula (1m), [Chem. 2]

(In the above formula, M is a single bond or an alkylene group with a carbon number of 1 to 20 that may have a substituent; the benzene ring may have a substituent; the substitution position of the vinyl group on the benzene ring is the meta position; n is 2 to 4 An integer; R is a hydrogen atom, a hydroxyl group or an organic group, and when R is an organic group, the atom bonded to Si is C). The crosslinking agent according to claim 4, wherein R is an alkyl group having 1 to 18 carbon atoms which may have substituents. The crosslinking agent according to claim 4 or 5, wherein M is a single bond or an alkylene group with 1 to 4 carbons. The crosslinking agent according to claim 4 or 5 is a curable composition used in the manufacture of prepregs, metal-clad laminates, or wiring boards. A curable composition comprising: the cross-linking agent according to claim 4 or 5, and a curable compound having two or more cross-linkable functional groups capable of cross-linking with the cross-linking agent. A prepreg comprising: a fiber base material, and a semi-hardened or hardened material of the curable composition according to claim 8. A laminate comprising: a substrate, and a curable composition layer containing the curable composition according to claim 8. A laminate comprising: a base material, and a layer containing a semi-cured product or a cured product containing a (semi) cured product of the curable composition according to claim 8. The laminate according to claim 10 or 11, wherein the base material is a resin film or metal foil. A metal-clad laminate, comprising: an insulating layer containing a cured product of the curable composition according to claim 8, and a metal foil. A wiring board comprising: an insulating layer containing a cured product of the curable composition according to claim 8, and wiring.

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