TW202313572A - 樹脂組成物、硬化物、積層體、硬化物的製造方法、積層體的製造方法、半導體裝置的製造方法及半導體裝置、以及鹼產生劑 - Google Patents

樹脂組成物、硬化物、積層體、硬化物的製造方法、積層體的製造方法、半導體裝置的製造方法及半導體裝置、以及鹼產生劑 Download PDF

Info

Publication number
TW202313572A
TW202313572A TW111131170A TW111131170A TW202313572A TW 202313572 A TW202313572 A TW 202313572A TW 111131170 A TW111131170 A TW 111131170A TW 111131170 A TW111131170 A TW 111131170A TW 202313572 A TW202313572 A TW 202313572A
Authority
TW
Taiwan
Prior art keywords
group
formula
preferable
groups
resin composition
Prior art date
Application number
TW111131170A
Other languages
English (en)
Chinese (zh)
Inventor
浅川大輔
Original Assignee
日商富士軟片股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商富士軟片股份有限公司 filed Critical 日商富士軟片股份有限公司
Publication of TW202313572A publication Critical patent/TW202313572A/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Laminated Bodies (AREA)
TW111131170A 2021-08-27 2022-08-18 樹脂組成物、硬化物、積層體、硬化物的製造方法、積層體的製造方法、半導體裝置的製造方法及半導體裝置、以及鹼產生劑 TW202313572A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021-138592 2021-08-27
JP2021138592 2021-08-27

Publications (1)

Publication Number Publication Date
TW202313572A true TW202313572A (zh) 2023-04-01

Family

ID=85321934

Family Applications (1)

Application Number Title Priority Date Filing Date
TW111131170A TW202313572A (zh) 2021-08-27 2022-08-18 樹脂組成物、硬化物、積層體、硬化物的製造方法、積層體的製造方法、半導體裝置的製造方法及半導體裝置、以及鹼產生劑

Country Status (4)

Country Link
JP (1) JPWO2023026892A1 (ja)
CN (1) CN117836715A (ja)
TW (1) TW202313572A (ja)
WO (1) WO2023026892A1 (ja)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020066315A1 (ja) * 2018-09-27 2020-04-02 富士フイルム株式会社 感光性樹脂組成物、硬化膜、積層体、硬化膜の製造方法、半導体デバイス
JP7150040B2 (ja) * 2018-09-28 2022-10-07 富士フイルム株式会社 感光性樹脂組成物、硬化膜、積層体、硬化膜の製造方法、および半導体デバイス

Also Published As

Publication number Publication date
WO2023026892A1 (ja) 2023-03-02
JPWO2023026892A1 (ja) 2023-03-02
CN117836715A (zh) 2024-04-05

Similar Documents

Publication Publication Date Title
TW202236012A (zh) 樹脂組成物、硬化物、積層體、硬化物之製造方法及半導體元件
TW202235490A (zh) 樹脂組成物、硬化物、積層體、硬化物之製造方法及半導體元件
TW202319451A (zh) 樹脂組成物、硬化物、積層體、硬化物的製造方法、積層體的製造方法、半導體裝置的製造方法及半導體裝置、以及化合物
TW202248205A (zh) 樹脂組成物、硬化物、積層體、硬化物的製造方法及半導體裝置、以及化合物
TW202248294A (zh) 樹脂組成物、硬化物、積層體、硬化物的製造方法及半導體裝置
TW202244160A (zh) 樹脂組成物、硬化物、積層體、硬化物的製造方法及半導體裝置、以及鹼產生劑
TW202307084A (zh) 樹脂組成物、硬化物、積層體、硬化物的製造方法及半導體裝置、以及聚醯亞胺前驅物及其製造方法
TW202234158A (zh) 樹脂組成物、硬化物、積層體、硬化物之製造方法及半導體元件
TW202234156A (zh) 樹脂組成物、硬化物、積層體、硬化物之製造方法及半導體元件以及化合物
TW202125122A (zh) 圖案形成方法、感光性樹脂組成物、積層體的製造方法及半導體元件的製造方法
TW202313572A (zh) 樹脂組成物、硬化物、積層體、硬化物的製造方法、積層體的製造方法、半導體裝置的製造方法及半導體裝置、以及鹼產生劑
TW202309117A (zh) 樹脂組成物、硬化物、積層體、硬化物的製造方法、積層體的製造方法、半導體裝置的製造方法及半導體裝置
TW202307091A (zh) 樹脂組成物、硬化物、積層體、硬化物的製造方法、積層體的製造方法、半導體裝置的製造方法及半導體裝置
TW202319410A (zh) 樹脂組成物、硬化物、積層體、硬化物的製造方法、積層體的製造方法、半導體裝置的製造方法及半導體裝置
TW202248293A (zh) 樹脂組成物、硬化物、積層體、硬化物的製造方法及半導體元件
TW202305016A (zh) 硬化物的製造方法、積層體的製造方法、半導體裝置的製造方法、樹脂組成物、硬化物、積層體及半導體裝置
TW202244129A (zh) 樹脂組成物、硬化物、積層體、硬化物的製造方法及半導體裝置、以及環化樹脂的前驅物
TW202244039A (zh) 樹脂組成物、硬化物、積層體、硬化物的製造方法及半導體裝置、以及鹼產生劑
TW202305040A (zh) 硬化物的製造方法、積層體的製造方法、半導體裝置的製造方法、樹脂組成物、硬化物、積層體及半導體裝置
TW202248289A (zh) 樹脂組成物、硬化物、積層體、硬化物的製造方法及半導體裝置
TW202242002A (zh) 樹脂組成物、硬化物、積層體、硬化物的製造方法、半導體裝置及樹脂
TW202307085A (zh) 樹脂組成物、硬化物、積層體、硬化物的製造方法及半導體裝置、以及聚醯亞胺前驅物
TW202311240A (zh) 樹脂組成物、硬化物、積層體、硬化物之製造方法、積層體之製造方法、半導體元件之製造方法、及半導體元件、以及化合物
TW202244639A (zh) 永久膜之製造方法、積層體之製造方法及半導體裝置之製造方法
TW202248755A (zh) 負型感光性樹脂組成物、硬化物、積層體、硬化物的製造方法以及半導體元件