TW202312126A - Electronic device - Google Patents

Abstract

An electronic device is provided. The electronic device includes a driving transistor, a semiconductor unit and an electrostatic discharge protection(EDP)circuit. The semiconductor unit has a first terminal coupled to a first terminal of the driving transistor. The EDP circuit is coupled to a node between the first terminal of the driving transistor and the first terminal of the semiconductor unit.

Description

electronic device

The present disclosure relates to an electronic device, and in particular to an electronic device including an electrostatic protection circuit.

Generally, electronic devices with a display function include semiconductor electronic components, such as light-emitting diodes (light-emitting diodes, LEDs). However, the threshold voltage of the semiconductor electronic components will shift, causing the current flowing through the semiconductor electronic components to increase or decrease, causing chromatic aberration in the display of the electronic device. In view of this, in order to avoid the problem of chromatic aberration in the electronic device caused by the shift of the threshold voltage of the semiconductor electronic components, solutions of several embodiments will be proposed below.

The present disclosure is directed to an electronic device capable of eliminating static electricity to prevent threshold voltage shifts of semiconductor electronic components.

According to an embodiment of the present disclosure, the electronic device of the present disclosure includes a driving transistor, a semiconductor unit, and an electrostatic protection circuit. The semiconductor unit has a first end coupled to the first end of the driving transistor. The electrostatic protection circuit is coupled to a node between the first end of the driving transistor and the first end of the semiconductor unit.

Based on the above, the electronic device of the present disclosure can eliminate static electricity when the electronic device generates static electricity through the electrostatic protection circuit coupled between the driving transistor and the semiconductor unit, so that the threshold voltage of the driving transistor will not be affected.

The present disclosure can be understood by referring to the following detailed description in conjunction with the accompanying drawings. It should be noted that, in order to make the readers easy to understand and for the sake of brevity of the drawings, several drawings in the present disclosure only depict a part of the display device. Also, certain components in the drawings are not drawn to actual scale. In addition, the number and size of each component in the figure are only for illustration, and are not intended to limit the scope of the present disclosure.

Certain terms will be used throughout the specification and appended claims of this disclosure to refer to particular elements. Those skilled in the art should understand that display device manufacturers may refer to the same component by different names. This article does not intend to distinguish between those components that have the same function but have different names. In the description and claims below, words such as "comprising" and "comprising" are open-ended words, so they should be interpreted as meaning "including but not limited to...".

In some embodiments of the present disclosure, terms such as “coupling” and “interconnection” related to bonding and connection, unless otherwise specified, may mean that two structures are in direct contact, or may also mean that two structures are not in direct contact , where other structures are placed between these two structures. And the terms about joining and connecting may also include the situation that both structures are movable, or both structures are fixed. In addition, the term "coupled" includes any direct and indirect electrical connection means, direct and indirect structural connection means, or direct and indirect signal connection means.

The ordinal numbers used in the specification and claims, such as "first", "second", etc., are used to modify elements, which do not imply and represent that the components have any previous ordinal numbers, nor do they represent a certain The order of an element with another element, or the order of the manufacturing method, the use of the multiple ordinal numbers is only used to clearly distinguish an element with a certain name from another element with the same name. The claims and the description may not use the same term, accordingly, the first component in the description may be the second component in the claim. It should be noted that in the following embodiments, without departing from the spirit of the present disclosure, technical features in several different embodiments may be replaced, reorganized, and mixed to complete other embodiments.

FIG. 1 is a schematic circuit block diagram of an electronic device according to an embodiment of the present disclosure. Referring to FIG. 1 , the electronic device 100 is, for example, a display panel. In some embodiments, the electronic device 100 may include a display device, an antenna device, a sensing device or a splicing device, but not limited thereto. The electronic device 100 can be a bendable or flexible electronic device. The electronic device 100 may include, for example, liquid crystals and light emitting diodes. The light emitting diodes may, for example, include organic light emitting diodes (organic light emitting diodes, OLEDs), submillimeter light emitting diodes (mini LEDs), micro light emitting diodes (micro LEDs) or quantum dot light emitting diodes (quantum light emitting diodes). dot, QD, can be, for example, QLED, QDLED), fluorescence (fluorescence), phosphorescence (phosphor) or other suitable materials, and the materials can be arranged and combined arbitrarily, but not limited thereto. The antenna device may be, for example, a liquid crystal antenna, but is not limited thereto. The splicing device may be, for example, a display splicing device or an antenna splicing device, but is not limited thereto. It should be noted that the electronic device 100 can be any permutation and combination mentioned above, but it is not limited thereto. In the following, the display device is used as the electronic device 100 or the splicing device to illustrate the content of the present disclosure, but the present disclosure is not limited thereto.

In this embodiment, the electronic device 100 includes a driving transistor 110 , a semiconductor unit 120 and an electrostatic protection circuit (Electrostatic Discharge Protection, EDP) 130 . In this embodiment, the driving transistor 110 , the semiconductor unit 120 and the electrostatic protection circuit 130 are all disposed in the pixel display area of the display panel. In some embodiments, the driving transistor 110 and the semiconductor unit 120 are disposed in the pixel display area of the display panel, and the electrostatic protection circuit 130 is disposed in the peripheral area outside the pixel display area. In this embodiment, the electronic device 100 may further include a driving circuit (not shown). The driving circuit can control the driving transistor 110 to drive the semiconductor unit 120 .

According to design requirements, in some embodiments, there are plural semiconductor units 120, and the number and arrangement thereof can be determined according to actual requirements. According to practical applications, the semiconductor unit 120 may include a diode, a photodiode, a light emitting diode (Light Emitting Diode, LED), a micro light emitting diode (micro-LED), an organic light emitting diode (Organic Light Emitting Diode) Diode, OLED), Inorganic Light Emitting Diode (ILED), Submillimeter Light Emitting Diode (Mini-LED), Micro Light Emitting Diode (Micro-LED), Electroluminescence (EL) Components, laser diodes (Laser Diode), other types of semiconductor electronic components or light emitting components are not limited in this embodiment.

In this embodiment, the first terminal 111 of the driving transistor 110 is coupled to the first terminal 121 of the semiconductor unit 120 . The first terminal 111 of the driving transistor 110 can output a driving current to the first terminal 121 (eg, an anode terminal) of the semiconductor unit 120 to drive the semiconductor unit 120 . In this embodiment, the driving transistor 110 is, for example, a p-type Metal-Oxide-Semiconductor Field-Effect Transistor (PMOSFET). The first terminal 111 of the driving transistor 110 is, for example, a drain terminal. According to design requirements, in some embodiments, the driving transistor 110 is, for example, an n-type Metal-Oxide-Semiconductor Field-Effect Transistor (NMOSFET). The first terminal 111 of the driving transistor 110 is, for example, a source terminal.

In this embodiment, the ESD protection circuit 130 is coupled to a node between the first terminal 111 of the driving transistor 110 and the first terminal 121 of the semiconductor unit 120 . In other words, a node refers to any node on the current path of the driving current between the driving transistor 110 and the semiconductor unit 120 , such as the node N1 or the node N2 , but not limited thereto.

It is worth mentioning that during the manufacturing process of the electronic device 100 , when the driving circuit or the driving transistor 110 of the electronic device 100 generates static electricity, the static electricity protection circuit 130 is enabled to discharge the static electricity. In this way, even if static electricity is formed on any terminal of the driving transistor 110 , the static electricity can be eliminated by the static electricity protection circuit 130 to prevent the threshold voltage of the driving transistor 110 from shifting. In other words, the threshold voltage of the driving transistor 110 is not affected, so when the semiconductor unit in the electronic device is a light emitting unit, the electronic device can avoid chromatic aberration.

FIG. 2 is a schematic circuit diagram of an electronic device according to an embodiment of the present disclosure. 2, the electronic device 200 includes a driving transistor 210, a semiconductor unit 220, an electrostatic protection circuit 230, a reset circuit 240, a writing and compensation circuit 250, a voltage stabilizing circuit 260, a capacitor CST and switching transistors T2-T3. The driving transistor 210 , the semiconductor unit 220 , and the electrostatic protection circuit 230 included in the electronic device 200 in FIG. 2 can be deduced by referring to the relevant description of the electronic device 100 , and thus will not be repeated here.

In this embodiment, the driving transistor 210, the semiconductor unit 220, the reset circuit 240, the writing and compensation circuit 250, the voltage stabilizing circuit 260, the capacitor CST and the switching transistors T2~T3 are arranged in the electronic device 200 (such as a display panel) in the pixel display area. The position where the electrostatic protection circuit 230 is disposed is not limited. For example, in this embodiment, the electrostatic protection circuit 230 can be disposed in the pixel display area. In some embodiments, the electrostatic protection circuit 230 may be disposed in a peripheral area other than the pixel display area.

In this embodiment, the driving transistor 210 is implemented as a P-type transistor, and the driving transistor T1 is used as an illustration in the following embodiments. According to design requirements, in some embodiments, the driving transistors T1 are arranged in plural, and the number and arrangement thereof can be determined according to actual requirements. In this embodiment, the first end (ie, the drain end) of the driving transistor T1 is coupled to the writing and compensation circuit 250 at the node N1. The second terminal (ie, the source terminal) of the driving transistor T1 is coupled to (receives) the first voltage ARVDD on the node N3. In this embodiment, the first voltage ARVDD is, for example, a reference high voltage. The control terminal (ie, the gate terminal) of the driving transistor T1 is coupled (received) to the data signal SD through the capacitor CST and the writing and compensating circuit 250 .

In this embodiment, the semiconductor unit 220 is illustrated as a single light emitting element. The first terminal (ie, the anode terminal) of the semiconductor unit cell 220 receives a driving current at the node N2. The second terminal (ie, the cathode terminal) of the semiconductor unit 220 is coupled to (receives) the second voltage ARVSS. In this embodiment, the second voltage ARVSS is, for example, a reference low voltage. In some embodiments, the second voltage ARVSS is, for example, ground. In this embodiment, the voltage level of the first voltage ARVDD is higher than the voltage level of the second voltage ARVSS.

In this embodiment, the switch transistor T2 is realized by a P-type transistor. In some embodiments, the switching transistor T2 is, for example, an N-type transistor. In the embodiment of FIG. 2 , the first terminal (ie, the drain terminal) of the switching transistor T2 is coupled to the first terminal (ie, the anode terminal) of the semiconductor unit 220 at the node N2 . The second terminal (ie, the source terminal) of the switching transistor T2 is coupled to the first terminal (ie, the drain terminal) of the driving transistor T1 on the node N1 . The control terminal (ie, the gate terminal) of the switching transistor T2 is coupled to (receives) the switching signal Em for switching operation.

In this embodiment, the switch transistor T3 is realized by a P-type transistor. In some embodiments, the switching transistor T3 is, for example, an N-type transistor. In the embodiment of FIG. 2, the first end (ie, the drain end) of the switching transistor T3 is coupled to the writing and compensation circuit 250 at the node N5, and is coupled to the control of the driving transistor T1 at the node N4 through the capacitor CST. terminal (i.e., gate terminal). The second terminal (ie, the source terminal) of the switching transistor T3 is coupled (received) to the reference voltage Vref. The control terminal (ie, the gate terminal) of the switching transistor T3 is coupled to (receives) the switching signal Em for switching operation.

In this embodiment, the driving transistor 210 , the switching transistor T2 and the switching transistor T3 can be used as a driving circuit to output the driving current to the semiconductor unit 220 when the switching signal Em is enabled.

In this embodiment, the first terminal of the ESD protection circuit 230 is coupled to the node N2 between the first terminal (ie, the drain terminal) of the driving transistor T1 and the first terminal (ie, the anode terminal) of the semiconductor unit 220 , The second terminal of the ESD protection circuit 230 is coupled to (receives) the second voltage ARVSS, and the third terminal of the ESD protection circuit 230 is coupled to the second terminal (ie, the source terminal) of the driving transistor T1 . In this embodiment, the electrostatic protection circuit 230 includes at least one electronic component. The electronic components are, for example, diodes or other semiconductor electronic components, but not limited thereto. In some embodiments, the ESD protection circuit 230 may have a different number of terminals according to the number of electronic components. The number of terminals may be, for example, two terminals, three terminals or more than three terminals, but not limited thereto.

Specifically, in this embodiment, the electronic components of the electrostatic protection circuit 230 include a plurality of diodes 231 - 232 . The number of diodes 231 or 232 in this embodiment is just an example. In some embodiments, the electronic components of the ESD protection circuit 230 may be, for example, only the diode 231 or the diode 232 , but not limited thereto. The first terminal (ie, the cathode terminal) of the diode 231 can serve as the first terminal of the ESD protection circuit 230 , and is coupled to the node N2 . The second end (ie, the anode end) of the diode 231 can serve as the second end of the ESD protection circuit 230 , and is coupled to (receives) the second voltage ARVSS. The first terminal (ie, the cathode terminal) of the diode 232 can serve as the third terminal of the electrostatic protection circuit 230, and is coupled between the second terminal (ie, the source terminal) of the driving transistor T1 and the first voltage ARVDD . The second terminal (ie, the anode terminal) of the diode 232 can serve as the second terminal of the ESD protection circuit 230 , and is coupled to the anode terminal of the diode 231 and coupled to (receives) the second voltage ARVSS.

In this embodiment, the reset circuit 240 is controlled by the first control voltage SNO. Multiple first ends of the reset circuit 240 are respectively coupled to both ends of the capacitor CST, so as to reset both ends of the capacitor CST (including the control end of the driving transistor T1 ) during the period when the first control voltage SN0 is enabled. . The plurality of second terminals of the reset circuit 240 are respectively coupled (received) to the reference voltage Vref or the reset voltage Vrst.

Specifically, in this embodiment, the reset circuit 240 includes transistors T4 - T5 . The transistors T4-T5 in this embodiment are realized by P-type transistors. In some embodiments, the transistors T4 - T5 may be, for example, N-type transistors, but not limited thereto. In the embodiment of FIG. 2 , the first terminal (ie, the drain terminal) of the transistor T4 is coupled to the first terminal of the capacitor CST, and is coupled to the writing and compensation circuit 250 on the node N5 . The second terminal (ie, the source terminal) of the transistor T4 is coupled (received) to the reference voltage Vref. The first terminal (ie, the drain terminal) of the transistor T5 is coupled to the second terminal of the capacitor CST, and is coupled to the control terminal (ie, the gate terminal) of the driving transistor T1 on the node N4 . The second terminal (ie, the source terminal) of the transistor T5 is coupled to (receives) the reset voltage Vrst. The control terminal (ie, the gate terminal) of the transistor T4 and the control terminal (ie, the gate terminal) of the transistor T5 are coupled together, and are coupled (received) to the first control voltage SNO.

In this embodiment, the writing and compensation circuit 250 is controlled by the second control voltage SN1. A first terminal of the writing and compensation circuit 250 is coupled to the first terminal of the coupling capacitor CST on the node N5. Other terminals of the writing and compensation circuit 250 are respectively coupled to the nodes N1 and N4, and are coupled to (receive) the data signal SD. The writing and compensating circuit 250 can respectively compensate the nodes N4 and N5 and write the data signal SD during the period when the second control voltage SN1 is enabled.

Specifically, in this embodiment, the writing and compensation circuit 250 includes transistors T6-T7. The transistors T6-T7 in this embodiment are realized by P-type transistors. In some embodiments, the transistors T6 - T7 may be, for example, N-type transistors, but not limited thereto. In the embodiment of FIG. 2 , the first terminal (ie, the drain terminal) of the transistor T6 is coupled to the first terminal of the capacitor CST on the node N5 . The second terminal (ie, the source terminal) of the transistor T6 is coupled (received) to the data signal SD. The first terminal (ie, the drain terminal) of the transistor T7 is coupled to the first terminal (ie, the drain terminal) of the driving transistor T1 on the node N1 . The second terminal (ie, the source terminal) of the transistor T7 is coupled to the second terminal of the capacitor CST and the control terminal (ie, the gate terminal) of the driving transistor T1 on the node N4 . The control terminal (ie, the gate terminal) of the transistor T7 and the control terminal (ie, the gate terminal) of the transistor T6 are coupled together, and are coupled (received) to the second control voltage SN1 .

In this embodiment, the voltage stabilizing circuit 260 includes a capacitor C1, but not limited thereto. The first terminal of the capacitor C1 is coupled to the control terminal (ie, the gate terminal) of the driving transistor T1 on the node N4 . The second terminal of the capacitor C1 is coupled to the second terminal (ie, the source terminal) of the driving transistor T1 and the first voltage ARVDD on the node N3 . In this embodiment, the voltage stabilizing circuit 260 can stabilize the voltage difference between the second terminal (ie, the source terminal) and the control terminal (ie, the gate terminal) of the driving transistor T1 according to the first voltage ARVDD.

In this embodiment, the electronic device 200 can perform reset operation, compensation, data writing operation and driving operation to realize the display function.

Specifically, in this embodiment, in the reset operation, the first control voltage SN0 has an enable voltage level to enable the reset circuit 240 . The second control voltage SN1 has a disable voltage level to disable the programming and compensation circuit 250 . The switching signal Em can have a disable voltage level to turn off the switching transistors T2 and T3.

In this embodiment, in the compensation and data writing operations, the second control voltage SN1 has an enabling voltage level to enable the writing and compensation circuit 250 . The first control voltage SN0 has a disable voltage level to disable the reset circuit 240 . The switching signal Em can have a disable voltage level to turn off the switching transistors T2 and T3.

In this embodiment, in the driving operation, the switch signal Em has an enable voltage level to turn on the switch transistors T2 and T3 . The first control voltage SN0 has a disable voltage level to disable the reset circuit 240 . The second control voltage SN1 has a disable voltage level to disable the programming and compensation circuit 250 .

FIG. 3 is a schematic diagram of the operation of the electronic device in the embodiment of FIG. 2 of the present disclosure. For the convenience of explaining the content of this case, Fig. 3 only marks the marks of some components. Referring to FIG. 3 , in the electronic device 200, the N3 and N2 nodes are respectively coupled to the two ends of the electrostatic protection circuit 230. Therefore, when N3 and/or N2 generate static electricity, the diode 231 and/or the electrostatic protection circuit 230 The diode 232 is enabled to discharge static electricity without affecting the display quality of the electronic device 200 . In some embodiments, the ESD protection circuit 230 may have different numbers of terminals according to the number of electronic components. The number of terminals may be, for example, two terminals, three terminals or more than three terminals, but not limited thereto. In addition, the positions where the terminals of the electrostatic protection circuit 230 are coupled can be determined according to requirements. For example, the reset circuit 240, the writing and compensation circuit 250, the voltage stabilizing circuit 260, the capacitor CST, the switching transistors T2-T3, the driving transistor T1 of the electronic device 200, or any node at the coupling thereof are all Optionally coupled to the terminal of the ESD protection circuit 230 . When static electricity is generated at nodes coupled between the aforementioned circuits 240 - 260 or electronic components CST, T1 - T3 and the static electricity protection circuit 230 , the static electricity protection circuit 230 is enabled to eliminate the static electricity.

In this embodiment, during the manufacturing process of the electronic device 200 , when the first voltage ARVDD and the second voltage ARVSS are not connected to the respective DC power sources, no static electricity is formed at any node in the electronic device 200 . At this time, the electrostatic protection circuit 230 is disabled.

In this embodiment, when the first voltage ARVDD and the second voltage ARVSS are connected to their respective DC power sources, assuming that static electricity with positive or negative charges is formed on the node N3 or N2, the electrostatic protection circuit 230 is enabled to provide discharge circuit.

For example, if the static electricity of positive charge is formed at the node N2, the diode 231 is reversed conduction. The static electricity of the positive charge can pass through the diode 231 from the node N2 to the anode terminal of the diode 231 to form a positive electrostatic current Ip_1. The positive charge electrostatic current Ip_1 is pulled to the second voltage ARVSS through the diode 231 to discharge the static electricity. On the other hand, if static electricity of positive charges is formed at the node N3, the diode 232 is turned on reversely. The static electricity of the positive charge can pass through the diode 232 from the node N3 to the anode of the diode 232 to form a positive electrostatic current Ip_2. The positive charge electrostatic current Ip_2 is pulled to the second voltage ARVSS through the diode 232 to discharge the static electricity.

For example, if a static charge of negative charge is formed at the node N2, the diode 231 is forward-conducted. The static electricity of the negative charge can flow from the anode terminal of the diode 231 to the node N2 through the diode 231 to form a negative electrostatic current In_1. The negative static electricity current In_1 is pulled to the second voltage ARVSS through the diode 231 to discharge the static electricity. On the other hand, if static electricity of negative charges is formed at the node N3, the diode 232 is forward-conducted. The static electricity of the negative charge can flow from the anode terminal of the diode 232 to the node N3 through the diode 232 to form a negative electrostatic current In_2. The negative static electricity current In_2 is pulled to the second voltage ARVSS through the diode 232 to discharge the static electricity.

In the present disclosure, the electrostatic protection circuit 230 coupled between the driving transistor T1 and the anode terminal of the semiconductor unit 220 can provide a discharge circuit to discharge the static electricity when the static electricity is generated. Therefore, in this embodiment, the driving transistor T1 and/or the switching transistor T2 can prevent the threshold voltage from shifting due to static electricity, so as to output a stable driving current to power the electronic device. In some embodiments, when the semiconductor unit is a light emitting unit, chromatic aberration of the electronic device can be avoided.

FIG. 4 is a schematic diagram of an electronic device according to another embodiment of the present disclosure. For the convenience of explaining the content of this case, Fig. 4 only marks the marks of some components. The driving transistor T1, semiconductor unit 420, reset circuit, writing and compensation circuit, voltage stabilizing circuit, capacitor CST and switching transistor included in the electronic device 400 of FIG. 4 can refer to the relevant description of the electronic device 200 in FIG. By analogy, it will not be repeated here. In this embodiment, the driving transistor T1, the semiconductor unit 420, the reset circuit, the writing and compensation circuit, the voltage stabilizing circuit, the capacitor CST and the switching transistor are all arranged on the pixel of the electronic device 400 (such as a display panel) In the display area, the electrostatic protection circuit 430 is disposed in a peripheral area other than the pixel display area, but not limited thereto. In some embodiments, the electrostatic protection circuit 430 can be disposed in the pixel display area.

Referring to FIG. 4 , the first terminal of the ESD protection circuit 430 is coupled to the node N1 between the first terminal (ie, the drain terminal) of the driving transistor T1 and the first terminal (ie, the anode terminal) of the semiconductor unit 420 . In this embodiment, the electrostatic protection circuit 430 includes at least one electronic component. The electronic components are, for example, diodes or other semiconductor electronic components. In this embodiment, the first end of the electronic component is coupled to the node N1. The second terminal of the electronic component is coupled to (receives) the third voltage VGH or the fourth voltage VGL. In this embodiment, the voltage level of the third voltage VGH is higher than the voltage level of the fourth voltage VGL. The third voltage VGH is, for example, a reference high voltage. The fourth voltage VGL is, for example, a reference low voltage. In some embodiments, the voltage level of the third voltage VGH is equal to the voltage level of the first voltage ARVDD. The voltage level of the fourth voltage VGL is equal to the voltage level of the second voltage ARVSS.

Specifically, in this embodiment, the electronic components of the electrostatic protection circuit 430 include a plurality of diodes 431 - 432 . The number of diodes 431 or 432 in this embodiment is just an example. A first end (ie, a cathode end) of the diode 431 is coupled to the node N1 , which may serve as a first end of the ESD protection circuit 430 , for example. The second terminal (ie, the anode terminal) of the diode 431 is coupled to the fourth voltage VGL, which can serve as the second terminal of the electrostatic protection circuit 430 , for example. The first terminal of the diode 432 (ie, the cathode terminal) is coupled to the third voltage VGH, which can be used as the second terminal or the third terminal of the electrostatic protection circuit 430, and the second terminal of the diode 432 (ie, the cathode terminal) extreme) can be used as the first terminal of the electrostatic protection circuit 430 and coupled to the cathode terminal of the diode 431 . In some embodiments, the fourth voltage may be, for example, ground, but not limited thereto.

In this embodiment, in the electronic device 400, the N1 node is coupled to the terminal of the electrostatic protection circuit 430, therefore, when N1 generates static electricity, the electrostatic protection circuit 430 is enabled to discharge the static electricity without affecting the electronic device 400 The displayed quality. In some embodiments, the ESD protection circuit 430 may have a different number of terminals according to the number of electronic components, and the number of terminals may be, for example, two terminals, three terminals or more than three terminals, but not limited thereto. In addition, the positions where the terminals of the electrostatic protection circuit 430 are coupled can be determined according to requirements. For example, the reset circuit, writing and compensation circuit, voltage stabilizing circuit, capacitor CST, switching transistor, driving transistor, or any node of the coupling of the electronic device 400 can be selectively coupled to terminal of the ESD protection circuit 430 . When the nodes coupled between the aforementioned circuits or electronic components and the static electricity protection circuit 430 generate static electricity, the static electricity protection circuit 430 is enabled to discharge the static electricity.

In this embodiment, during the manufacturing process of the electronic device 400 , when the first voltage ARVDD and the second voltage ARVSS are not connected to their respective DC power sources, no static electricity is formed at any node in the electronic device 400 . At this time, the electrostatic protection circuit 430 is disabled.

In this embodiment, when the first voltage ARVDD and the second voltage ARVSS are connected to their respective DC power sources, assuming that static electricity with positive or negative charges is formed on the node N1, the electrostatic protection circuit 430 is enabled to provide a discharge circuit. . In some embodiments, the node (such as N2, N3, N4 or N5) can be selectively coupled to the ESD protection circuit 430, so that when the node N2, N3, N4 or N5 generates static electricity, the ESD protection circuit 430 is Enable to eliminate static electricity.

For example, if static electricity of positive charges is formed at the node N1, and the voltage of the node N1 is greater than the third voltage VGH, the diode 431 is reversely conducted, and the diode 432 is forwardly conducted. The positive electrostatic current Ip_1 is formed from the node N1 through the diode 431 and the anode terminal of the diode 431 , and is pulled to the third voltage VGL through the diode 431 to discharge the static electricity. On the other hand, the positive charge electrostatic current Ip_2 is formed from the node N1 through the diode 432, the cathode terminal of the diode 432 and the third voltage VGH, and is pulled to the third voltage VGH through the diode 432 to dissipate the static electricity exclude. The forward-conducting positive electrostatic current Ip_2 of the diode 432 may be much greater than the reverse-conducting positive electrostatic current Ip_1 of the diode 431 , and the difference between the two electrostatic currents may be more than 1000 times, for example. In some embodiments, if static electricity of positive charges is formed at the node N1, the diode 431 and the diode 432 may be reversed conduction, for example, but not limited thereto.

For example, if static electricity of negative charge is formed at the node N1, and the voltage of the node N1 is lower than the fourth voltage VGL, the diode 431 is forward-conducted, and the diode 432 is reverse-conducted. The negative charge electrostatic current In_1 is formed from the anode terminal of the diode 431 through the diode 431 and the node N1, and is pulled to the fourth voltage VGL through the diode 431 to discharge static electricity. On the other hand, the negative charge electrostatic current In_2 is formed from the cathode terminal of the diode 432 through the diode 432, the node N1 and the third voltage VGH, and is pulled to the third voltage VGH through the diode 432 to dissipate the static electricity exclude. The negative electrostatic current In_1 of the forward conduction of the diode 431 may be much greater than the negative electrostatic current In_2 of the reverse conduction of the diode 432 . In some embodiments, if the static electricity of negative charge is formed at the node N1, the diode 431 and the diode 432 can be reversely conducted, for example, but not limited thereto.

In the present disclosure, the static electricity protection circuit 430 coupled between the driving transistor T1 and the anode terminal of the semiconductor unit 420 can provide an additional discharge circuit to discharge the static electricity when the static electricity is generated. Therefore, in this embodiment, the driving transistor T1 and/or the switching transistor T2 can avoid the threshold voltage shift caused by static electricity, so as to output a stable driving current. In some embodiments, when the semiconductor unit is a light emitting unit, chromatic aberration of the electronic device can be avoided.

FIG. 5 is a schematic diagram of an electronic device according to another embodiment of the present disclosure. For the convenience of explaining the content of this case, Fig. 5 only marks the marks of some components. The semiconductor unit, reset circuit, writing and compensation circuit, voltage stabilizing circuit, capacitor CST and switching transistor included in the electronic device 400 of FIG. 5 can refer to the relevant description of the electronic device 200 in FIG. Not to be restated. In this embodiment, the ESD protection circuit 530 in FIG. 5 can refer to the related description of the ESD protection circuit 430 in FIG. 4 and can be deduced by analogy, so it will not be repeated here.

Referring to FIG. 5 , the electronic components of the electrostatic protection circuit 530 include a plurality of transistors 531 - 532 , wherein the transistors 531 - 532 can be P-type transistors. The number of transistors 531 or 532 in this embodiment is just an example. Transistors 531-532 can be used as diodes respectively. Specifically, the gate terminal and the source terminal of the transistor 531 are coupled together and coupled to the node N1. The drain end of the transistor 531 is coupled (received) to the fourth voltage VGL. The gate terminal and the source terminal of the transistor 532 are coupled together, and are coupled (received) to the third voltage VGH. The drain terminal of the transistor 532 is coupled to the node N1.

In this embodiment, in the electronic device 500, the N1 node is coupled to the terminal of the electrostatic protection circuit 530, therefore, when N1 generates static electricity, the electrostatic protection circuit 530 is enabled to discharge the static electricity without affecting the electronic device 500 The displayed quality. In some embodiments, the ESD protection circuit 530 may have different numbers of terminals according to the number of electronic components. The number of terminals may be, for example, two terminals, three terminals or more than three terminals, but not limited thereto. In addition, the positions where the terminals of the electrostatic protection circuit 530 are coupled can be determined according to requirements. For example, the reset circuit, writing and compensation circuit, voltage stabilizing circuit, capacitor CST, switching transistor, driving transistor, or any node of the coupling of the electronic device 500 can be selectively coupled to terminal of the ESD protection circuit 530 . When the nodes coupled between the aforementioned circuits or electronic components and the static electricity protection circuit 530 generate static electricity, the static electricity protection circuit 530 is enabled to discharge the static electricity.

In this embodiment, during the manufacturing process of the electronic device 500 , when the first voltage ARVDD and the second voltage ARVSS are not connected to their respective DC power sources, no static electricity is formed at any node in the electronic device 500 . At this time, the electrostatic protection circuit 530 is disabled.

In this embodiment, when the first voltage ARVDD and the second voltage ARVSS are connected to their respective DC power sources, assuming that static electricity with positive or negative charges is formed on the node N1, the electrostatic protection circuit 530 is enabled to provide a discharge circuit. . In some embodiments, a node (such as N2, N3, N4 or N5) can be selectively coupled to the electrostatic protection circuit 530, so that when static electricity is generated at the node N2, N3, N4 or N5, the electrostatic protection circuit 530 is Enable to eliminate static electricity.

For example, if static electricity of positive charges is formed at the node N1, and the voltage of the node N1 is greater than the third voltage VGH, the transistor 532 is forward-conducted. The positive charge electrostatic current Ip is formed from the node N1 through the transistor 532 , the gate terminal and the source terminal of the transistor 532 to the third voltage VGH, and is pulled to the third voltage VGH by the transistor 532 to discharge static electricity.

For example, if static electricity of negative charge is formed at the node N1, and the voltage of the node N1 is lower than the fourth voltage VGL, the transistor 531 is forward-conducted. The negative electrostatic current In is formed from the drain terminal of the transistor 531 through the transistor 531 and the node N1, and is pulled to the fourth voltage VGL through the transistor 531 to discharge the static electricity.

FIG. 6 is a schematic diagram of an electronic device according to another embodiment of the present disclosure. For the convenience of explaining the content of this case, Fig. 6 only marks the marks of some components. In this embodiment, the ESD protection circuit 630 in FIG. 6 can refer to the relevant description of the ESD protection circuit 530 in FIG. 5 and can be deduced by analogy, so it will not be repeated here.

Referring to FIG. 6 , the electronic components of the electrostatic protection circuit 630 include a plurality of transistors 631 - 632 , wherein the transistors 631 - 632 can be N-type transistors. The number of transistors 631 or 632 in this embodiment is just an example. The transistors 631 to 632 can serve as diodes respectively. Specifically, the drain terminal of the transistor 631 is coupled to the node N1. The gate terminal and the source terminal of the transistor 631 are coupled together, and are coupled (received) to the fourth voltage VGL. The drain terminal of the transistor 632 is coupled (received) to the third voltage VGH. The gate terminal and the source terminal of the transistor 632 are coupled together and coupled to the node N1.

In this embodiment, when the first voltage ARVDD and the second voltage ARVSS are connected to their respective DC power sources, if positive static electricity is formed on the node N1, and the voltage of the node N1 is greater than the third voltage VGH, the transistor 632 is forward-conducted. is turned on, so that the positive charge electrostatic current Ip is pulled to the third voltage VGH by the transistor 632 to discharge the static electricity. If static electricity of negative charge is formed at node N1, and the voltage of node N1 is lower than the fourth voltage VGL, the transistor 631 is forward-conducted, so that the electrostatic current In of the negative charge is pulled to the fourth voltage VGL through the transistor 631 to eliminate the static electricity .

FIG. 7 is a schematic diagram of an electronic device according to another embodiment of the present disclosure. For the convenience of explaining the content of this case, Fig. 7 only marks the marks of some components. In this embodiment, the ESD protection circuit 730 in FIG. 7 can refer to the related description of the ESD protection circuit 530 in FIG. 5 and can be deduced by analogy, so it will not be repeated here.

Referring to FIG. 7 , the electronic components of the electrostatic protection circuit 730 include a transistor 731 and a transistor 732 , wherein the transistor 731 can be an N-type transistor and the transistor 732 can be a P-type transistor. The number of transistors 731 or 732 in this embodiment is just an example. The transistor 731 and the transistor 732 can be used as diodes respectively. Specifically, the drain terminal of the transistor 731 is coupled to the node N1. The gate terminal and the source terminal of the transistor 731 are coupled together, and are coupled (received) to the fourth voltage VGL. The gate terminal and the source terminal of the transistor 732 are coupled together, and are coupled (received) to the third voltage VGH. The drain terminal of the transistor 732 is coupled to the node N1.

In this embodiment, when the third voltage VGH and the fourth voltage VGL are connected to their respective DC power sources, if the static electricity of positive charges is formed on the node N1, and the voltage of the node N1 is greater than the third voltage VGH, the transistor 732 is forward-conducted. is turned on, so that the positive charge electrostatic current Ip is pulled to the third voltage VGH by the transistor 732 to discharge the static electricity. If static electricity of negative charge is formed at node N1, and the voltage of node N1 is lower than the fourth voltage VGL, the transistor 731 is forward-conducted, so that the electrostatic current In of the negative charge is pulled to the fourth voltage VGL through the transistor 731 to eliminate the static electricity .

To sum up, the electronic device of the present disclosure can discharge static electricity through the discharge circuit formed by the static electricity protection circuit, so as to prevent the driving transistor from having a shifted threshold voltage due to static electricity. In addition, if the semiconductor unit in the electronic device is a light-emitting unit, it is possible to avoid chromatic aberration in the electronic device. It should be noted that by selectively coupling any node of the electronic device to the terminal of the electrostatic protection circuit, the nodes coupled between the electronic device and the electrostatic protection circuit can discharge static electricity through the electrostatic protection circuit, and Can achieve good electrostatic protection effect.

Finally, it should be noted that: the above embodiments are only used to illustrate the technical solutions of the present disclosure, not to limit them; although the present disclosure has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that: It is still possible to modify the technical solutions described in the foregoing embodiments, or perform equivalent replacements for some or all of the technical features; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the technical solutions of the various embodiments of the present disclosure. scope.

100, 200, 400, 500, 600, 700: Electronics 110, 210: drive transistor 111: the first end of the driving transistor 120, 220, 420, 520, 620, 720: semiconductor unit 121: the first end of the semiconductor unit 130, 230, 430, 530, 630, 730: electrostatic protection circuit 231~232, 431~432: Diode 240: reset circuit 250: Write and compensation circuit 260: Regulator circuit 531~532, 631~632, 731~732: Transistor ARVDD: first voltage ARVSS: second voltage C1: Capacitor CST: Capacitor SD: data signal Em: switch signal In, In_1~In_2: Negative charge electrostatic current Ip, Ip_1~Ip_2: positive charge electrostatic current N1, N2, N3, N4, N5: nodes SN0: first control voltage SN1: second control voltage T1: drive transistor T2~T3: switching transistor T4~T7: Transistor VGH: the third voltage VGL: fourth voltage Vref: reference voltage Vrst: reset voltage

FIG. 1 is a schematic circuit block diagram of an electronic device according to an embodiment of the present disclosure. FIG. 2 is a schematic circuit diagram of an electronic device according to an embodiment of the present disclosure. FIG. 3 is a schematic diagram of the operation of the electronic device in the embodiment of FIG. 2 of the present disclosure. FIG. 4 is a schematic diagram of an electronic device according to another embodiment of the present disclosure. FIG. 5 is a schematic diagram of an electronic device according to another embodiment of the present disclosure. FIG. 6 is a schematic diagram of an electronic device according to another embodiment of the present disclosure. FIG. 7 is a schematic diagram of an electronic device according to another embodiment of the present disclosure.

100: Electronic device

110: drive transistor

111: the first end of the driving transistor

120: Semiconductor unit

121: the first end of the semiconductor unit

130: Electrostatic protection circuit

N1: node

Claims (10)

An electronic device comprising: drive transistor; a semiconductor unit having a first end coupled to the first end of the drive transistor; and An electrostatic protection circuit, coupled to a node between the first end of the driving transistor and the first end of the semiconductor unit. The electronic device as claimed in claim 1, wherein the first end of the driving transistor outputs a driving current to the semiconductor unit to drive the semiconductor unit. The electronic device as described in claim 1, further comprising: A switching transistor has a first terminal coupled to the first terminal of the semiconductor unit, and a second terminal of the switching transistor coupled to the first terminal of the driving transistor. The electronic device according to claim 3, wherein a control terminal of the driving transistor is coupled to a data signal, and a control terminal of the switching transistor is coupled to a switching signal. The electronic device according to claim 1, wherein the second terminal of the driving transistor is coupled to a first voltage, and the second terminal of the semiconductor unit is coupled to a second voltage, wherein the voltage of the first voltage is approximately A voltage level higher than the second voltage. The electronic device according to claim 5, wherein the electrostatic protection circuit includes: At least one electronic component has a first end coupled to the node. The electronic device as claimed in claim 6, wherein the second terminal of the at least one electronic component is coupled to the second voltage. The electronic device according to claim 5, wherein the electrostatic protection circuit includes: a first diode having a first terminal coupled to the node, a second terminal of the first diode coupled to the second voltage; and The second diode has a first end coupled to the second end of the driving transistor, and a second end of the second diode coupled to the second voltage. The electronic device according to claim 5, wherein the electrostatic protection circuit includes: a first electronic component having a first terminal coupled to the third voltage, a second terminal of the first electronic component coupled to the node; and The second electronic component has a first terminal coupled to the node, a second terminal of the second electronic component coupled to the fourth voltage, wherein the voltage level of the third voltage is higher than the fourth voltage The voltage level of the voltage. The electronic device according to claim 9, wherein the voltage level of the third voltage is equal to the voltage level of the first voltage, and the voltage level of the fourth voltage is equal to the voltage level of the second voltage .

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