TW202310147A - Substrate processing apparatus and substrate processing method - Google Patents

Abstract

An apparatus for processing a substrate is provided. The apparatus for processing the substrate includes a housing having a process space, a gas supply unit to supply gas into the process space, a support unit including a chuck to support the substrate in the process space and a lower electrode to surround the chuck when viewed from a top, a temperature adjusting plate provided in the housing, a dielectric plate unit coupled to the temperature adjusting plate, and having a dielectric plate disposed in opposite to the substrate supported by the support unit in the process space, and an upper electrode unit coupled to the temperature adjusting plate, and having an upper electrode disposed in opposition to the lower electrode. The dielectric plate unit includes a first base disposed between the dielectric plate and the temperature adjusting plate.

Description

Substrate processing equipment and substrate processing method

Embodiments of the inventive concept described herein relate to a substrate processing apparatus and a substrate processing method. More specifically, embodiments of the inventive concept described herein relate to a substrate processing apparatus and a substrate processing method capable of processing a substrate with plasma.

Plasma refers to an ionized gas state formed by ions, free radicals, and electrons, etc., and is generated by very high temperature, strong electric field or radio frequency electromagnetic field. Semiconductor device processing includes ashing or etching processes to remove films on substrates using plasma. The ashing or etching process occurs when ions and radical particles contained in the plasma collide or react with the film on the substrate. The process of treating a substrate with plasma is performed in various ways. Wherein, the bevel etching device for processing the edge region of the substrate processes the edge region of the substrate by transferring plasma to the edge region of the substrate.

Figure 1 is a schematic diagram of a portion of a typical bevel etching apparatus. A typical bevel etching device A includes a chuck 1100 , a lower insulator 1200 , a dielectric plate 1300 , a plasma exclusion zone (plasma exclusion zone; PEZ) ring 1400 and a cooling plate 1500 .

The chuck 1100 has a surface on which the substrate W is placed. The lower insulator 1200 is disposed to surround the chuck 1100 when viewed from above. The dielectric plate 1300 is disposed at a position opposite to the top surface of the substrate W seated on the chuck 1100 . The PEZ ring 1400 is arranged to surround the dielectric plate 1300 when viewed from above. A gas channel is formed in the PEZ ring 1400, and the process gas G excited into a plasma state flows through the gas channel. In addition, the discharge ends of the gas passages formed in the PEZ ring 1400 face the edge region of the substrate W. As shown in FIG. Accordingly, the process gas G discharged from the gas channel flows toward the edge region of the substrate W, so when the plasma is transferred to the substrate W, the thin film on the edge region of the substrate W is processed. In addition, the dielectric plate 1300 and the PEZ ring 1400 are coupled to the cooling plate 1500 to prevent excessive temperature rise during the processing of the substrate W. Referring to FIG. The cooling plate 1500 generates cooling energy to minimize an increase in temperature of the dielectric plate 1300 and the PEZ ring 1400 during processing of the substrate W. Referring to FIG.

However, when the edge region of the substrate W is processed using the bevel etching apparatus as described above, it is not easy to change the processing rate (eg, etching rate) according to the process conditions required for the substrate W. This is because it is not easy to change the dielectric plate 1300 and/or the PEZ ring 1400 into another shape or have another material according to the type of the substrate W when functional characteristics of the dielectric plate 1300 and the PEZ ring 1400 are considered.

In general, the dielectric plate 1300 and the cooling plate 1500 are formed of different materials from each other. The dielectric plate 1300 is generally formed of a ceramic material, while the cooling plate 1500 is formed of a metallic material. In this case, the dielectric plate 1300 and the cooling plate 1500 have thermal expansion rates different from each other due to their material properties, so that the dielectric plate 1300 and the cooling plate 1500 may be deformed during processing of the substrate W. Referring to FIG.

Embodiments of the present invention provide a substrate processing device and a substrate processing method capable of effectively processing a substrate.

Embodiments of the present invention provide a substrate processing device and a substrate processing method capable of improving the efficiency of plasma processing of an edge region of a substrate.

Embodiments of the present invention provide a substrate processing device and a substrate processing method capable of changing a substrate processing speed.

The problems to be solved by the present invention are not limited to the above-mentioned problems, and other unmentioned problems can be clearly understood from the following description by those skilled in the art related to the present invention.

An embodiment of the present invention may provide an apparatus for processing a substrate, and the apparatus may have: a casing including a processing space; a gas supply unit configured to supply gas into the processing space; a support unit, It includes a chuck supporting the substrate in the processing space, and a lower electrode surrounding the chuck in plan view; a temperature adjustment plate provided in the housing; a dielectric plate unit coupled to to the temperature regulating plate, the dielectric plate unit has a dielectric plate disposed opposite to the substrate supported by the supporting unit in the processing space; and an upper electrode unit having coupled to the temperature regulating plate, and has an upper electrode disposed opposite to the lower electrode; wherein the dielectric plate unit may include: a first base, which is disposed on the dielectric plate and the temperature regulating plate between the boards.

In an embodiment of the invention, the material forming the first base may be different from that of the dielectric board.

In an embodiment of the present invention, the material forming the first base may be the same as that of the temperature regulating plate.

In an embodiment of the present invention, the thermal expansion rate of the first base may be closer to the thermal expansion rate of the temperature regulating plate than to the thermal expansion rate of the dielectric plate.

In an embodiment of the present invention, the upper electrode unit may include: a second base, the second base is arranged to surround the first base when viewed from above, and the second base is arranged on the Between the upper electrode and the temperature regulating plate; and wherein, the first base and the second base may be spaced apart from each other to form a gas channel through which the gas supplied by the gas supply unit flows.

In an embodiment of the present invention, the gas supply unit may include: a second gas supply part configured to supply process gas to the gas channel, the process gas being excited into a plasma state.

In an embodiment of the present invention, the material forming the second base may be the same as that of the temperature regulating plate.

In an embodiment of the present invention, the thermal expansion rate of the second base may be closer to the thermal expansion rate of the temperature regulating plate than to the thermal expansion rate of the upper electrode.

In an embodiment of the present invention, a discharge end of the gas channel may be formed toward an edge region of the substrate supported by the supporting unit.

In an embodiment of the present invention, the dielectric plate may include: a gas flow channel through which the gas supplied by the gas supply unit flows; wherein, the discharge end of the gas flow channel may be formed toward a central area of the substrate supported by the supporting unit.

In an embodiment of the present invention, the gas supply unit may include: a first gas supply part configured to supply an inert gas to the gas channel.

In addition, in an embodiment of the present invention, a method for processing a substrate using a substrate processing device is also provided.

In an embodiment of the present invention, a method for processing a substrate is provided, wherein a plurality of the first bases can be provided; wherein, the plurality of the first bases can have different shapes and/or materials different from each other; Wherein, the plasma can be transferred and introduced into the processing space and etch the edge region of the substrate supported by the supporting unit; wherein, when the substrate processed in the processing space is the first substrate, the selected A first pedestal from a plurality of said first pedestals may be disposed between said dielectric plate and said temperature regulating plate; and wherein, when a substrate processed in said processing space is different from the first substrate When the second substrate is used, another first pedestal selected from a plurality of the first pedestals may be disposed between the dielectric plate and the temperature adjustment plate to change the etching rate of the edge region of the substrate. .

In an embodiment of the present invention, a method for processing a substrate is provided, wherein a plurality of the second bases can be provided; wherein, the plurality of the second bases can have different shapes and/or materials different from each other; Wherein, the plasma can be transferred and introduced into the processing space and etch the edge region of the substrate supported by the supporting unit; wherein, when the substrate processed in the processing space is the first substrate, the selected A second base from a plurality of said second bases may be disposed between said upper electrode and said temperature regulating plate; and wherein, when the substrate processed in said processing space is different from the first substrate For the second substrate, another second pedestal selected from a plurality of the second pedestals may be disposed between the upper electrode and the temperature adjustment plate to change the etching rate of the edge region of the substrate.

Embodiments of the present invention will be described more fully hereinafter with reference to the accompanying drawings. Embodiments of the invention are shown in the drawings. However, the present invention can have various embodiments, and is not limited to the following embodiments. The following description of the present invention omits detailed descriptions of known functions and configurations incorporated into the present invention in order not to obscure the subject matter of the present invention. In addition, the same reference numerals are used in each drawing to denote members having similar functions and actions.

Unless the context clearly sets forth the contrary meaning, the word "comprising" and variations thereof will be understood to mean the inclusion of stated elements, but not the exclusion of any other elements. It can be understood that terms such as "comprising" and "having" are intended to specify that there are described features, numbers, steps, operations, constituent members and components or combinations thereof in the specification, and do not exclude pre-existing, or adding one or more Other characteristics, quantities, steps, operations, constituent members and components or possibilities of combinations thereof.

A singular expression herein also includes a plural expression unless the contrary meaning is clearly listed in the context. Therefore, the shape and size of each component may be exaggerated in the drawings for clearer description.

An embodiment of the present invention will be described in detail below with reference to FIG. 2 to FIG. 5 .

FIG. 2 is a schematic diagram of a substrate processing equipment according to one embodiment of the present invention. Referring to FIG. 2 , the substrate processing equipment 1 has an equipment front end module (EFEM) 20 and a processing module 30 . EFEM 20 and processing module 30 are arranged along the same direction.

The EFEM 20 has a loadport 10 and a transfer frame 21 . The loading port 10 is disposed at the front end portion of the EFEM 20 along the first direction 11 . The loading port 10 has a plurality of support members 6 . The support members 6 are aligned with each other in the second direction 12, and the carriers 4, such as cassettes, or Front Opening Unified Pods (FOUPs) are seated on the support members 6, wherein receiving provided for the process Substrate W, or fully processed substrate W. The carrier 4 receives a substrate W provided for a process, or a substrate W that has been completely processed. The transfer frame 21 is disposed between the loading port 10 and the processing module 30 . The transfer frame 21 includes a first transfer robot 25 disposed in the transfer frame 21 to transfer the substrate W between the loadport 10 and the processing module 30 . The first transfer robot 25 moves along the transfer rail 27 extending in the second direction 12 to transfer the substrate W between the carrier 4 and the processing module 30 .

The processing module 30 includes a load lock chamber 40 , a transfer chamber 50 and a processing chamber 60 . The processing module 30 can receive the substrate W from the EFEM 20 to process the substrate W.

A load lock chamber 40 is provided adjacent to the transfer frame 21 . For example, load lock chamber 40 may be disposed between transfer chamber 50 and EFEM 20 . The load lock chamber 40 provides space to provide a substrate W on standby for processing before it is transferred to the processing chamber 60, or to provide a fully processed substrate W for processing before the substrate W is transferred to the EFEM 20. standby.

The transfer chamber 50 may carry a substrate W. As shown in FIG. The transfer chamber 50 is disposed adjacent to the load lock chamber 40 . The transfer chamber 50 has a polygonal body when viewed from above. Referring to FIG. 2 , when viewed from above, the transfer chamber 50 has a pentagonal body. A load lock chamber 40 and a plurality of processing chambers 60 are disposed outside the body and arranged along the periphery of the body. Each side wall of the body forms a channel (not shown) to allow the substrate W to enter and exit the body, connect the transfer chamber 50 with the load lock chamber 40 , or connect the transfer chamber 50 with the processing chamber 60 . A door (not shown) is provided on each channel to close or open the channel so that the inside of the body is sealed. A second transfer robot 53 is disposed in the inner space of the transfer chamber 50 to transfer the substrate W between the load lock chamber 40 and the processing chamber 60 . The second transfer robot 53 transfers the substrate W that has not been processed and is on standby in the load lock chamber 40 to the processing chamber 60 , or transfers the substrate W that has been completely processed to the load lock chamber 40 . In addition, the second transfer robot 53 transfers the substrate W between the processing chambers 60 to sequentially supply the substrate W to the plurality of processing chambers 60 . As shown in FIG. 2, when the transfer chamber 50 has a polygonal body, the load lock chamber 40 is disposed on a side wall of the transfer chamber 50 that is closer to the EFEM 20, and the processing chamber 60 is sequentially disposed on the side wall of the transfer chamber 50. On the remaining side walls of the transfer chamber 50. The transfer chamber 50 can be provided in various shapes and shapes as described above depending on the desired processing module.

The processing chamber 60 may be positioned closer to the transfer chamber 50 . The processing chamber 60 is disposed along the periphery of the transfer chamber 50 . Multiple processing chambers 60 may be provided. In each processing chamber 60, a substrate W may be processed. The processing chamber 60 receives the substrate W from the second transfer robot 53 and processes the substrate W. Referring to FIG. In addition, the processing chamber 60 provides the completely processed substrate W to the second transfer robot 53 . Processes different from each other may be respectively performed in the process chamber 60 .

A substrate processing apparatus 1000 for performing plasma processing in the processing chamber 60 will be described below. In addition, the substrate processing apparatus 1000 will be described below by way of example, that is, the substrate processing apparatus 1000 is configured to perform plasma processing on an edge region of a substrate in the processing chamber 60 . However, the present invention is not limited thereto, and the substrate processing apparatus 1000 to be described below may be applied to various chambers in the same or similar manner to perform processing on substrates. In addition, the substrate processing apparatus 1000 may be applied to various chambers to perform plasma processing on a substrate in the same or similar manner.

FIG. 3 is a schematic diagram of a substrate processing equipment disposed in the processing space of FIG. 2 according to an embodiment of the present invention. Referring to FIG. 3 , a substrate processing apparatus 1000 disposed in a processing chamber 60 performs a specific process on a substrate W with plasma. For example, the substrate processing apparatus 1000 may etch or ash a film on the substrate W. Referring to FIG. The film may include various types of films such as a polysilicon film, a silicon oxide film, and a silicon nitride film. In addition, the film may be a natural oxide film or a chemically produced oxide film. Additionally, the film may be a by-product of processing the substrate. In addition, the film may be foreign matter attached to and/or left on the substrate W. As shown in FIG.

The substrate processing apparatus 1000 may perform plasma processing on the substrate W. Referring to FIG. For example, the substrate processing apparatus 1000 may supply process gas, generate plasma from the supplied process gas, and process the substrate W. Referring to FIG. For example, the substrate processing apparatus 1000 may supply process gas, generate plasma from the supplied process gas, and process an edge region of the substrate W. Referring to FIG. The following description will be taken as an example, that is, the substrate processing apparatus 1000 is a bevel etching apparatus to etch the edge region of the substrate W. Referring to FIG.

The substrate processing apparatus 1000 may include a housing 100 , a support unit 300 , a dielectric plate unit 500 , an upper electrode unit 600 , a temperature adjustment plate 700 , a gas supply unit 800 and a controller 900 .

The interior of the housing 100 may include a processing space 102 . An opening (not shown) may be formed on one surface of the casing 100 . The substrate W may be introduced into or taken out of the processing space 102 of the housing 100 through an opening formed in the housing 100 . The opening can be opened or closed by an opening/closing member such as a door (not shown). When the opening of the housing 100 is opened or closed by the opening/closing member, the processing space 102 of the housing 100 may be isolated from the outside. In addition, after the processing space 102 of the housing 100 is isolated, the atmosphere of the processing space 102 of the housing 100 may be adjusted to a lower pressure close to a vacuum state. In addition, the housing 100 may be formed of a material such as metal. In addition, the surface of the housing 100 may be coated with an insulating material.

In addition, a discharge hole 104 may be formed at the bottom surface of the case 100 . The plasma P generated from the processing space 102 or the first gas G1 and the second gas G2 supplied to the processing space 102 may be discharged to the outside through the discharge hole 104 . In addition, by-products generated when the substrate W is treated using the plasma P may be discharged to the outside through the discharge hole 104 . In addition, the discharge hole 104 may be connected with a discharge pipeline (not shown). The discharge line may be connected to a pressure reducing means to reduce the pressure. The decompression unit can decompress the processing space 102 .

The supporting unit 300 may support the substrate W in the processing space 102 . The supporting unit 300 may include a chuck 310 , a power supply part 320 , an insulating ring 330 , a lower electrode 350 and a driving part 370 .

The chuck 310 may have a support surface that supports the substrate W. As shown in FIG. When viewed from above, the chuck 310 may be circular. The diameter of the chuck 310 may be smaller than the diameter of the substrate W when viewed from above. Accordingly, the central area of the substrate W supported by the chuck 310 sits on the supporting surface of the chuck 310 , while the edge area of the substrate W may not be in contact with the supporting surface of the chuck 310 .

A heating unit (not shown) may be disposed in the chuck 310 . The heating unit (not shown) can heat the chuck 310 . The heating unit may be a heater. Additionally, cooling fluid channels 312 may be formed in the chuck 310 . A cooling fluid channel 312 may be formed inside the chuck 310 . The cooling fluid channel 312 may be connected with a cooling fluid supply line 314 and a cooling fluid discharge line 316 . Cooling fluid supply line 314 may be connected to a cooling fluid supply source 318 . The cooling fluid supply source 318 can store cooling fluid and/or supply cooling fluid to the cooling fluid supply line 314 . In addition, the cooling fluid supplied to the cooling fluid passage 312 may be discharged to the outside through the cooling fluid discharge line 316 . The cooling fluid stored by and/or supplied from the cooling fluid supply 318 may be cooling water or cooling gas. The shape of the cooling fluid passage 312 formed in the chuck 310 is not limited to the shape shown in FIG. 3 but variously modified shapes. In addition, components to cool the chuck 310 are not limited to components that supply cooling fluid, but may include various components capable of cooling the chuck 310 (eg, a cooling plate).

The source component 320 can provide power to the chuck 310 . The power part 320 may include a power source 322 , a matcher 324 and a power cord 326 . The power supply 322 can be a bias power supply. The power supply 322 can be connected to the chuck 310 via a power cord 326 . In addition, a matcher 324 is provided on the power line 326 for impedance matching.

The insulating ring 330 may be arranged in a ring shape when viewed from above. The insulating ring 330 may be disposed to surround the chuck 310 when viewed from above. For example, the insulating ring 330 may be annular. In addition, the insulating ring 330 may have a step such that a height of a top surface of an inner region of the insulating ring 330 is different from a height of a top surface of an outer region of the insulating ring 330 . For example, the insulating ring 330 may have a step such that the height of the top surface of the inner region of the insulating ring 330 is higher than the height of the top surface of the outer region of the insulating ring 330 . When the substrate W is seated on the supporting surface of the chuck 310 , the top surface of the inner region of the insulating ring 330 and the top surface of the outer region of the insulating ring 330 may contact the bottom surface of the substrate W. When the substrate W is seated on the support surface of the chuck 310 , the top surface of the inner region of the insulating ring 330 and the top surface of the outer region of the insulating ring 330 may be spaced apart from the bottom surface of the substrate W. An insulating ring 330 may be disposed between the chuck 310 and the lower electrode 350, which will be described in detail below. Since a bias power supply is provided in the chuck 310, the insulating ring 330 may be disposed between the chuck 310 and the lower electrode 350, which will be described in detail below. The insulating ring 330 may be made of a material having insulating properties.

The lower electrode 350 may be disposed under an edge region of the substrate W supported by the chuck 310 . When viewed from above, the lower electrode 350 may be ring-shaped. The lower electrode 350 may be disposed to surround the insulating ring 330 when viewed from above. The top surface of the lower electrode 350 may have the same height as the top surface of the outer region of the insulating ring 330 . The bottom surface of the lower electrode 350 may have the same height as the bottom surface of the insulating ring 330 . In addition, the top surface of the lower electrode 350 may be disposed lower than the top surface of the central portion of the chuck 310 . In addition, the lower electrode 350 may be disposed to be spaced apart from the bottom surface of the substrate W supported by the chuck 310 . In addition, the lower electrode 350 may be disposed to be spaced apart from the bottom surface of the edge region of the substrate W supported by the chuck 310 .

The lower electrode 350 may be disposed opposite to the upper electrode 620, which will be described in detail below. The lower electrode 350 may be disposed under the upper electrode 620, which will be described in detail below. The lower electrode 350 may be grounded. The lower electrode 350 may increase the density of the plasma through inductive coupling of a bias power applied to the chuck 310 . Therefore, the processing efficiency of the edge region of the substrate W may be improved.

The driving part 370 can lift the chuck 310 . Drive member 370 may include a driver 372 and a shaft 374 . Shaft 374 may be coupled with chuck 310 . Shaft 374 may be connected to driver 372 . The driver 372 can lift the chuck 310 in the vertical direction through the shaft 374 .

The dielectric board unit 500 may include a dielectric board 520 and a first base 510 . In addition, the dielectric board unit 500 may be coupled with a temperature regulating board 700, which will be described in detail below.

When viewed from above, the dielectric plate 520 may be circular. In addition, the top surface of the dielectric board 520 may have a step such that the height of the central area of the dielectric board 520 is higher than the height of the edge area of the dielectric board 520 . In addition, the bottom surface of the dielectric plate 520 may be provided in a flat shape. The dielectric plate 520 may be disposed to face the substrate W supported by the support unit 300 in the processing space 102 . The dielectric plate 520 may be disposed on the support unit 300 . The dielectric plate 520 may be formed of a material including ceramics. The dielectric plate 520 may include a gas flow channel 601 connected to the first gas supply part 810 of the gas supply unit 800, which will be described in detail below. In addition, the discharge end of the gas flow path 601 may be configured such that the first gas G1 supplied by the first gas supply part 810 is supplied to the central area of the substrate W supported by the support unit 300 . In addition, the discharge end of the gas flow channel 601 may be configured such that the first gas G1 is supplied to the top surface of the central region of the substrate W supported by the support unit 300 .

The first base 510 can be disposed between the dielectric board 520 and the temperature regulating board 700 , which will be described in detail below. The first base 510 can be coupled to the temperature regulating plate 700 , which will be described in detail below, and the dielectric plate 520 can be coupled to the first base 510 . Therefore, the dielectric board 520 may be coupled to the temperature regulation board 700 through the first base 510 .

The first base 510 may have a diameter gradually increasing downward. The diameter of the top surface of the first base 510 may be smaller than the diameter of the bottom surface of the dielectric plate 520 . The top surface of the first base 510 may have a flat shape. In addition, the bottom surface of the first base 510 may be stepped. For example, the bottom surface of the edge area of the first base 510 may be stepped and lower than the bottom surface of the central area of the first base 510 . In addition, the bottom surface of the first base 510 and the top surface of the dielectric plate 520 may have a shape allowing a combination between the bottom surface of the first base 510 and the top surface of the dielectric plate 520 . For example, a central area of the dielectric plate 520 may be inserted into a central area of the first base 510 . In addition, the first base 510 may be formed of a material including metal. For example, the first base 510 may be formed of a material including aluminum (Al).

The upper electrode unit 600 may include a second base 610 and an upper electrode 620 . In addition, the upper electrode unit 600 may be coupled to a temperature regulating plate 700, which will be described in detail below.

The upper electrode 620 may face the lower electrode 350, which will be described in detail below. The upper electrode 620 may be disposed over the lower electrode 350 . The upper electrode 620 may be disposed over an edge region of the substrate W supported by the chuck 310 . The upper electrode 620 may be grounded.

The upper electrode 620 may have a shape surrounding the dielectric plate 520 when viewed from above. The upper electrode 620 may be disposed to be spaced apart from the dielectric plate 520 . The upper electrode 620 is spaced apart from the dielectric plate 520 to form a space. The space may form a part of the gas passage 602 allowing the second gas G2 supplied by the second gas supply part 830 to flow therethrough. The discharge end of the gas passage 602 may be configured such that the second gas G2 is supplied to an edge region of the substrate W supported by the support unit 300 . In addition, the discharge end of the gas passage 602 may be configured such that the second gas G2 is supplied to the top surface of the edge region of the substrate W supported by the support unit 300 .

The second base 610 may be disposed between the upper electrode 620 and the temperature adjustment plate 700, which will be described in detail below. The second base 610 may be coupled to the temperature regulating plate 700 , which will be described in detail below, and the upper electrode 620 may be coupled to the second base 610 . Therefore, the upper electrode 620 may be coupled to the temperature regulating plate 700 through the second base 610 .

When viewed from above, the second base 610 may be ring-shaped. Top and bottom surfaces of the second base 610 may have a flat shape. The second base 610 may have a shape surrounding the first base 510 when viewed from above. The second base 610 may have a diameter gradually decreasing downward. The second base 610 may be disposed to be spaced apart from the first base 510 . The second base 610 is spaced apart from the first base 510 to form a space. The space may form a part of the gas passage 602 allowing the second gas G2 supplied by the second gas supply part 830 to flow therethrough. In addition, the second base 610 may be formed of a material including metal. For example, the second base 610 may be formed of a material including aluminum (Al).

The temperature regulating plate 700 may be coupled to the dielectric plate unit 500 and the upper electrode unit 600 . The temperature adjustment plate 700 may be provided in the case 100 . The temperature regulating plate 700 may generate heat. For example, the temperature regulation plate 700 may generate heating energy or cooling energy. The temperature regulating board 700 can generate heat by receiving a signal from the controller 900, which will be described in detail below. The temperature regulating plate 700 can generate heating energy or cooling energy to perform a control operation, and the temperature of the dielectric plate unit 500 and the upper electrode unit 600 can be more uniformly maintained. For example, the temperature adjustment plate 700 may generate cooling energy to prevent excessive temperature increase of the dielectric plate unit 500 and the upper electrode unit 600 when the substrate W is processed as much as possible.

The gas supply unit 800 may supply gas to the processing space 102 . The gas supply unit 800 may supply the first gas G1 and the second gas G2 to the processing space 102 . The gas supply unit 800 may include a first gas supply part 810 and a second gas supply part 830 .

The first gas supply part 810 may supply the first gas G1 to the processing space 102 . The first gas G1 may be an inert gas, such as nitrogen. The first gas supply part 810 may supply the first gas G1 to a central area of the substrate W supported by the chuck 310 . The first gas supply part 810 may include a first gas supply source 812 , a first gas supply line 814 and a first valve 816 . The first gas supply source 812 can store the first gas G1 and/or supply the first gas G1 to the first gas supply line 814 . The first gas supply line 814 may be connected to the gas flow channel 601 formed in the dielectric plate 520 . A first valve 816 may be installed on the first gas supply line 814 . The first valve 816 can be an on/off valve or a flow control valve. The first gas G1 supplied from the first gas supply source 812 may be supplied to the center region of the top surface of the substrate W through the gas flow channel 601 formed in the dielectric plate 520 .

The second gas supply part 830 may supply the second gas G2 into the processing space 102 . The second gas G2 may be a process gas excited into a plasma state. The second gas supply part 830 may pass through the gas channel 602 formed by being spaced apart from each other by the dielectric plate 520 and the first base 510 and the upper electrode 620 and the second base 610 disposed on the edge region of the substrate W supported by the chuck 310 , the second gas G2 is supplied to the edge region of the substrate W. The second gas supply part 830 may include a second gas supply source 832 , a second gas supply line 834 and a second valve 836 . The second gas supply source 832 can store the second gas G2 and/or supply the second gas G2 to the second gas supply line 834 . The second gas supply line 834 may supply the second gas G2 to the space serving as the gas channel 602 . A second valve 836 may be installed on the second gas supply line 834 . The second valve 836 can be an on/off valve or a flow control valve. The second gas G2 supplied by the second gas supply source 832 may be supplied to the edge region of the top surface of the substrate W through the fluid channel 602 .

The controller 900 may control the substrate processing apparatus 1000 . The controller 900 may control the substrate processing apparatus 1000 to perform plasma processing to be performed later. For example, the controller 900 may control the gas supply unit 800 , the temperature adjustment plate 700 and the support unit 300 . For example, the controller 900 can control the support unit 300 and the gas supply unit 800, when the gas is supplied to the first gas supply part 810 and/or the second gas supply part 830, the power supply 322 supplies power to the chuck 310, and Plasma P is generated from an edge region of the substrate W supported by the chuck 310 .

FIG. 4 is a schematic diagram of the substrate processing equipment in FIG. 3 performing plasma processing according to an embodiment. Referring to FIG. 4 , according to one embodiment of the present invention, the substrate processing equipment 1000 can process the edge region of the substrate W. For example, the substrate processing apparatus 1000 may process the edge region of the substrate W by generating plasma P from the edge region of the substrate W. Referring to FIG. For example, the substrate processing apparatus 1000 may perform a bevel etching process to process the edge region of the substrate W. Referring to FIG. When processing the edge region of the substrate W, the substrate processing apparatus 1000 may allow the first gas supply part 810 to supply the first gas G1 to the center region of the substrate W, and allow the second gas supply part 830 to supply the second gas G1 to the edge region of the substrate W. Gas G2. The second gas G2 supplied by the second gas supply part 830 is a process gas to be excited into a plasma state in order to process an edge region of the substrate W. Referring to FIG. For example, the plasma P can be used to etch a thin film on the edge region of the substrate W. In addition, the first gas G1 supplied to the central area of the substrate W is an inert gas and prevents the second gas G2 from being introduced into the central area of the substrate W, thereby further improving the processing efficiency of the edge area of the substrate W. In addition, during the process of processing the substrate W, the temperature adjustment plate 700 may generate cooling energy to prevent the temperature of the dielectric plate unit 500 and the upper electrode unit 600 from excessively increasing.

According to one embodiment of the present invention, the first base 510 is disposed between the dielectric plate 520 and the temperature regulating plate 700 . The first base 510 is made of a material different from that of the dielectric plate 520 and is the same as that of the temperature regulating plate 700 . The thermal expansion rate of the first base 510 may be closer to the thermal expansion rate of the temperature regulating plate 700 , and less different from the thermal expansion rate of the dielectric plate 520 . In other words, since the first base 510 is disposed between the dielectric plate 520 and the temperature adjustment plate 700, the deformation of the temperature adjustment plate 700 and the dielectric plate 520 can be minimized, that is, the cooling generated by the temperature adjustment plate 700 can be minimized. Energy-induced deformation is minimized. This is because the first base 510 which is in direct contact with the temperature regulating plate 700 is made of a material similar to that of the temperature regulating plate 700 .

Similarly, according to one embodiment of the present invention, the second base 610 is disposed between the upper electrode 620 and the temperature regulating plate 700 . The second base 610 is made of a material different from that of the upper electrode 620 but is the same as that of the temperature regulating plate 700 . The thermal expansion rate of the second base 610 may be closer to the thermal expansion rate of the temperature regulating plate 700 , and less different from the thermal expansion rate of the upper electrode 620 . In other words, since the second base 610 is disposed between the upper electrode 620 and the temperature adjustment plate 700, the deformation of the temperature adjustment plate 700 and the upper electrode 620 can be minimized, that is, the cooling energy generated by the temperature adjustment plate 700 can be minimized. The induced deformation is minimized. This is because the second base 610 which is in direct contact with the temperature regulating plate 700 is made of a material similar to that of the temperature regulating plate 700 .

The substrate processing method according to one embodiment of the present invention will be described below with reference to FIGS. 4 and 5 . 4 is a schematic diagram of the substrate processing equipment of FIG. 3 performing plasma treatment according to an embodiment, and FIG. 5 is a schematic diagram of the substrate processing equipment of FIG. 3 performing plasma treatment according to another embodiment. According to one embodiment of the present invention, the first base 510 disposed between the temperature adjustment plate 700 and the dielectric plate 520, and/or the first base 510 disposed between the temperature adjustment plate 700 and the upper electrode 620 can The second pedestal 610 is used to change the processing rate, for example, the etching rate of the edge region of the substrate W.

A plurality of first bases 510 may be provided. The plurality of first bases 510 may have different shapes and/or be made of different materials. A plurality of second mounts 610 may be provided. The plurality of second bases 610 may have different shapes and/or be made of different materials. The user can couple one of the plurality of first bases 510 to the temperature adjustment plate 700, and couple one of the plurality of second bases 610 to the temperature adjustment plate 700, thereby changing the substrate W the etching rate.

For example, when the substrate W is introduced into the processing space 102, the plasma P is applied to the edge region of the first substrate W1 supported by the supporting unit 300 to etch the edge region of the first substrate W1, selected from a plurality of first substrate W1. Any one of the first bases 510 among a base 510 is disposed between the temperature adjustment plate 700 and the dielectric plate 520, and any one of the second bases 610 selected from a plurality of second bases 610 is disposed on the temperature adjustment plate 700 and the upper electrode 620. The difference is that when the plasma P is applied to the edge region of the second substrate W2 to etch the edge region of the second substrate W2, another first pedestal 510 selected from the plurality of first pedestals 510 may be configured at a temperature Between the regulating plate 700 and the dielectric plate 520 , another second base 610 selected from the plurality of second bases 610 may be disposed between the temperature regulating plate 700 and the upper electrode 620 .

In other words, according to one embodiment of the present invention, by changing the first pedestal 510 and/or the second pedestal 610 provided to the substrate processing equipment 1000 , the process conditions for treating the substrate W with plasma can be changed. For example, as shown in FIG. 4, when processing the first substrate W1, and when the edge region of the first substrate W1 requires a higher etching rate, the first pedestal 510 and the second pedestal 610 may be provided for the substrate processing. In the device 1000, the distance between the dielectric plate 520 and/or the upper electrode 620 is a first distance D1. For example, as shown in FIG. 5, when processing a second substrate W2 different from the first substrate W1, and when a lower etching rate is required in the edge region of the second substrate W2, the first base 510 and the second substrate 510 may be combined. Two bases 610 are provided to the substrate processing equipment 1000, so that the distance between the dielectric plate 520 and/or the upper electrode 620 is a second distance D2. The second distance D2 may be narrower than the first distance D1.

The change of the process conditions caused by the replacement of the first pedestal 510 and the second pedestal 610 is not limited to the change of the above-mentioned distance, but can be carried out in various ways. For example, the processing rate of the substrate W can be changed by changing the material of the first base 510 and the second base 610 according to the required process conditions of the substrate W. This is because the first pedestal 510 and the second pedestal 610 are spaced apart from each other, and the space between the first pedestal 510 and the second pedestal 610 forms a part of the gas channel 602 through which the process gas flows, so the first pedestal 510 and the second pedestal 610 are formed. The material of the second base 610 corresponds to the factors affecting the generation of the plasma P.

For example, when processing the first substrate W1 , the first base 510 made of the first material may be provided to the substrate processing apparatus 1000 . Alternatively, when processing the second substrate W2 different from the first substrate W1, the first base 510 made of the second material may be provided to the substrate processing apparatus 1000 . When the first substrate W1 is processed, the second base 610 made of the first material may be provided to the substrate processing apparatus 1000 . Alternatively, when processing the second substrate W2 different from the first substrate W1, the second base 610 made of the second material may be provided to the substrate processing apparatus 1000 .

In addition, the shapes of the first pedestal 510 and the second pedestal 610 vary according to the required process conditions of the substrate W, thereby changing the shape of the above-mentioned gas channel 602 . When the shape of the gas channel 602 is changed, the flow path of the process gas flowing through the gas channel 602 is also changed. This is because a change in the flow path of the process gas corresponds to a factor affecting generation of the plasma P.

Although the above-mentioned embodiment is illustrated by the substrate processing apparatus 1000 performing an etching process on the edge region of the substrate W, the present invention is not limited thereto. The aforementioned embodiments can be applied to various equipment and various processes that need to process the edge region of the substrate W in the same or similar manner.

According to the above-mentioned embodiments, the method of generating plasma in the substrate processing equipment 1000 may be an inductive coupled plasma (ICP) method. In addition, the method of generating plasma in the substrate processing equipment 1000 may be a capacitively coupled plasma (capacitor couple plasma; CCP) method. In addition, the substrate processing apparatus 1000 may generate the plasma P by using two of the ICP method and the CCP method, or selecting one of the ICP method and the CCP method. In addition, in addition to the above methods, the plasma P can also be generated in a well-known manner to treat the edge region of the substrate W.

According to one embodiment of the present invention, the substrate can be efficiently processed.

In addition, according to one embodiment of the present invention, the plasma treatment for the substrate can be uniformly performed.

In addition, according to one embodiment of the present invention, the efficiency of performing plasma treatment on the edge region of the substrate can be further improved.

The effects of the present invention are not limited to the foregoing, and any other unmentioned effects will be clearly understood from the above description by those skilled in the art related to the present invention.

The above detailed description is a detailed description of the present invention. Further, while the foregoing shows and describes embodiments of the present invention, the present invention can be applied in other various combinations, modifications and environments. That is to say, the above content can be modified or amended within the scope of the inventive concepts disclosed in this specification, should be within the disclosed scope, and/or within the scope of skills or knowledge in the art. The above-mentioned embodiments illustrate the best state of realizing the technical spirit of the present invention, and various changes can be made as required in the specific application field and use of the present invention. Therefore, the above detailed description of the invention is not meant to limit the invention to the disclosed embodiments. Furthermore, the claims appended hereto should be construed to include other embodiments as well.

Although the present invention has been described by the above embodiments, it will be apparent to those skilled in the art to which the present invention relates that various changes and modifications can be made without departing from the spirit and scope of the present invention. Therefore, it should be understood that the above-described embodiments are not restrictive, but illustrative.

1000: substrate processing equipment 1100: Chuck 1200: lower insulator 1300: Dielectric board 1400: Plasma Exclusion Zone Ring 1500: cooling plate 1: Substrate processing equipment 4: Bracket 6: Support parts 10: Loading port 11: First Direction 12: Second direction 20:Equipment front-end module 21: Transfer frame 25: The first transfer robot 27: Transfer track 30: Processing modules 40:Load Lock Chamber 50: transfer chamber 53:Second transfer robot 60: processing chamber 100: shell 102: Processing Space 104: discharge hole 300: support unit 310: Chuck 312: cooling fluid channel 314: Cooling fluid supply line 316: Cooling Fluid Drain Line 318: Cooling fluid supply source 320: Power components 322: power supply 324: Matcher 326: Power cord 330: insulation ring 350: lower electrode 370: drive components 372: drive 374: axis 500: Dielectric plate unit 510: the first base 520: dielectric board 600: Upper electrode unit 601: gas channel 602: gas channel 610: second base 620: upper electrode 700: temperature regulation board 800: gas supply unit 810: First gas supply component 812: Primary gas supply source 814: First gas supply line 816: first valve 830: Second gas supply component 832:Secondary gas supply source 834: Second gas supply line 836:Second valve 900: controller A: Bevel etching device G: Process gas G1: first gas G2: Second gas W: Substrate W1: first substrate W2: Second substrate D1: first distance D2: second distance P: Plasma

The aforementioned and other objects and features of the present invention will be clearly shown in the following drawings. Unless otherwise specified, the same reference symbols in the drawings generally represent similar parts, wherein:

FIG. 1 is a schematic diagram of a portion of a typical bevel etching apparatus.

FIG. 2 is a schematic diagram of a substrate processing equipment according to one embodiment of the present invention.

FIG. 3 is a schematic diagram of a substrate processing equipment disposed in the processing space of FIG. 2 according to an embodiment of the present invention.

FIG. 4 is a schematic diagram of the substrate processing equipment in FIG. 3 performing plasma processing according to an embodiment.

FIG. 5 is a schematic diagram of the substrate processing equipment in FIG. 3 performing plasma processing according to an embodiment.

100: shell

102: Processing Space

104: discharge hole

300: support unit

310: Chuck

312: cooling fluid channel

314: Cooling fluid supply line

316: Cooling Fluid Drain Line

318: Cooling fluid supply source

320: Power components

322: power supply

324: Matcher

326: Power cord

330: insulation ring

350: lower electrode

370: drive components

372: drive

374: axis

500: Dielectric plate unit

510: the first base

520: dielectric board

600: Upper electrode unit

601: gas channel

602: gas channel

610: second base

620: upper electrode

700: temperature regulation board

800: gas supply unit

810: First gas supply component

812: Primary gas supply source

814: First gas supply line

816: first valve

830: Second gas supply component

832:Secondary gas supply source

834: Second gas supply line

836:Second valve

900: controller

1000: substrate processing equipment

W: Substrate

Claims (13)

An apparatus for processing a substrate, the apparatus comprising: a housing with a processing space; a gas supply unit arranged to supply gas into said processing space; a supporting unit including a chuck supporting the substrate in the processing space, and a lower electrode surrounding the chuck in plan view; a temperature regulating plate, which is arranged in the housing; a dielectric plate unit coupled to the temperature adjustment plate, the dielectric plate unit having a dielectric plate disposed relative to the process space supported by the supporting unit substrate; and an upper electrode unit coupled to the temperature regulation plate and having an upper electrode disposed opposite to the lower electrode; Wherein, the dielectric board unit includes: The first base is arranged between the dielectric board and the temperature regulating board. The apparatus of claim 1, wherein the material forming the first base is different from the material of the dielectric plate. The device according to claim 2, wherein the material forming the first base is the same as that of the temperature regulating plate. The apparatus of claim 2, wherein the thermal expansion rate of the first base is closer to the thermal expansion rate of the temperature regulation plate than to the thermal expansion rate of the dielectric plate. The device according to claim 1, wherein the upper electrode unit comprises: a second base, when viewed from above, the second base is arranged to surround the first base, and the second base is arranged between the upper electrode and the temperature regulating plate; and Wherein, the first base and the second base are spaced apart from each other to form a gas channel, and the gas supplied by the gas supply unit flows through the gas channel. The device according to claim 5, wherein the gas supply unit includes: The second gas supply part is configured to supply process gas to the gas channel, and the process gas is excited into a plasma state. The apparatus according to claim 5, wherein the material forming the second base is the same as that of the temperature regulating plate. The apparatus according to claim 5, wherein the thermal expansion rate of the second base is closer to the thermal expansion rate of the temperature regulation plate than to the thermal expansion rate of the upper electrode. The apparatus according to claim 5, wherein a discharge end of the gas passage is formed toward an edge region of the substrate supported by the supporting unit. The device according to claim 5, wherein the dielectric plate comprises: a gas channel through which the gas supplied by the gas supply unit flows; Wherein, a discharge end of the gas channel is formed toward a central area of the substrate supported by the supporting unit. The device according to claim 10, wherein the gas supply unit includes: The first gas supply part is configured to supply inert gas to the gas channel. A method of processing a substrate using the substrate processing apparatus as claimed in Claim 2, wherein a plurality of said first bases are provided; Wherein, a plurality of the first bases have different shapes and/or materials different from each other; wherein an edge region of the substrate introduced into the processing space and supported by the supporting unit is etched via transferred plasma; Wherein, when the substrate processed in the processing space is a first substrate, one first pedestal selected from a plurality of the first pedestals is disposed between the dielectric plate and the temperature regulating plate ;and Wherein, when the substrate processed in the processing space is a second substrate different from the first substrate, another first pedestal selected from a plurality of the first pedestals is arranged on the dielectric plate and the temperature regulating plate to vary the etch rate of the edge region of the substrate. A method of processing a substrate using the substrate processing apparatus as claimed in claim 5, wherein a plurality of said second bases are provided; Wherein, a plurality of the second bases have different shapes and/or materials different from each other; wherein an edge region of the substrate introduced into the processing space and supported by the supporting unit is etched via transferred plasma; Wherein, when the substrate processed in the processing space is a first substrate, one second base selected from a plurality of second bases is disposed between the upper electrode and the temperature regulating plate; and Wherein, when the substrate processed in the processing space is a second substrate different from the first substrate, another second pedestal selected from a plurality of the second pedestals is provided on the upper electrode and the temperature regulating plate to change the etching rate of the edge region of the substrate.

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