TW202248439A - Sputtering apparatus, control method for sputtering apparatus and control device for sputtering apparatus - Google Patents

Abstract

The sputtering apparatus according to one embodiment of the present invention includes one or more targets arranged facing the substrate and made of a film-forming material, one or more magnet units arranged on the back surface of the targets, and a control device having an optimum solution calculation unit that calculates the optimum solution of the setting conditions for at least one of the magnet units based on an input information, wherein the input information includes at least setting conditions and the measured value of the film quality of the film-forming material on the substrate formed by the sputtering apparatus, the setting conditions include at least one of the position of each of the magnet units, the movement pattern of each of the magnet units, and the inflow current or inflow current fluctuation pattern of the electromagnets constituting each of the magnet units.

Description

Sputtering device, control method of sputtering device, and control device for sputtering device

The present invention relates to a sputtering device, a control method of the sputtering device and a control device for the sputtering device. The sputtering device has more than one cathode, and the cathode is arranged on the back of the target and is arranged with more than one magnet. unit.

A magnetron sputtering (magnetron sputtering) apparatus in which one or more magnet units are arranged on the back surface (non-sputtering surface) of a target is known as a film-forming apparatus used for a large-area substrate. The film adhesion homogeneity (such as film thickness, sheet resistance) of the substrate surface formed by the magnetron sputtering device is an important performance factor of the substrate, and maintaining this homogeneity is required for the sputtering device extremely important function.

In the magnetron sputtering device, the higher the horizontal magnetic flux density (the magnetic flux density perpendicular to the electric field) on the target surface (sputtering surface), the higher the erosion rate of the target surface caused by the plasma. The higher the value is, the more film-forming material is released from the surface of the target along with it, so that a film can be formed on the surface of the substrate at high speed. Typically, on the surface of the target, in a region where the horizontal magnetic flux density is higher, the film adhesion rate of the surface region of the substrate facing the region tends to be higher than that of other surface regions.

Therefore, in the film formation on a large substrate using a magnetron device, the distribution of the horizontal magnetic flux density has a great influence on the uniformity of the film quality in the substrate surface. In order to achieve uniform film formation of film quality, it is necessary to appropriately set the position, movement pattern, and magnetic force intensity or magnetic intensity variation pattern of the magnet unit.

As a method of achieving homogenization of the film quality by setting the position or movement pattern of the magnet unit, it is known to move the magnet unit back and forth along the back surface of the target (for example, refer to Patent Document 1), and to make the magnet unit move along the direction relative to the target. A technology that moves the back of the material in the direction of approaching or moving away (for example, refer to Patent Document 2). In addition, Patent Document 3 discloses a rotating cathode, which is equipped with: a cylindrical target; and a plurality of magnet units arranged inside the target; Rotate so that the part where the magnetic field is formed is scanned along the circumferential direction on the surface of the target.

[Prior Art Literature] [Patent Document] [Patent Document 1] Japanese Patent Laid-Open No. 2000-239841. [Patent Document 2] Japanese Patent Laid-Open No. 2020-200525. [Patent Document 3] Japanese Patent Laid-Open No. 2016-113646.

[Problem to be Solved by the Invention]

Since the shape of the target surface changes with the progress of erosion, the distribution of film quality also changes with time. Therefore, in order to maintain the homogeneity of the film quality, it is necessary to continuously set the most suitable magnet unit position, movement pattern, and magnetic force intensity or magnetic force intensity variation pattern over time.

However, since the progress rate of erosion is affected by various factors such as pressure, applied voltage, inflow of sputtering gas, target material, and target quality difference, it is difficult to accurately predict the progress of erosion. In addition, since erosion proceeds faster in areas with higher horizontal magnetic flux densities, the difference between the predicted and actual erosion progresses with increasing acceleration over time.

Therefore, it is difficult to pre-set the optimal position or movement pattern of the magnet unit and the magnetic force intensity or the magnetic force intensity variation pattern as the time coefficient. In fact, a series of operations must be performed periodically, that is, to confirm the substrate on which the film is deposited. Film adhesion state, stop the device, adjust the position or movement pattern of the magnet unit and the magnetic force intensity or the magnetic force intensity change pattern. Execution of this work becomes a factor of lowering the device utilization rate, and this problem is more likely to occur remarkably as the size of the substrate increases.

In addition, in general, even industrial products produced with the same design cannot avoid individual differences. Therefore, when a plurality of sputtering devices are installed, even if all recognizable film-forming conditions are uniformed, there is a possibility that the distribution of the same film quality cannot be obtained. In this case, it is necessary to adjust the position or moving pattern of the magnet and the magnetic strength or the changing pattern of the magnetic strength according to each device, which is one of the problems to be solved when using the device.

In view of the above situation, the object of the present invention is to provide a sputtering device, a control method of the sputtering device, and a control device for the sputtering device, which can improve the uniformity of film adhesion and the utilization rate of the device. [Means to solve the problem]

A sputtering device according to an aspect of the present invention is provided with: one or more targets arranged to face the substrate and made of a film-forming material; one or more magnet units arranged on the back of the aforementioned targets; a control device, An optimal solution calculation part is provided, and the optimal solution calculation part calculates the optimal solution of the setting conditions related to at least one of the aforementioned magnet units according to the input information, the aforementioned input information includes at least the aforementioned setting conditions and the results obtained by the aforementioned sputtering device. The measured value of the film quality of the film-forming material on the aforementioned substrate for film formation, the aforementioned setting conditions include at least one of the following: the position of each aforementioned magnet unit, the movement pattern of each aforementioned magnet unit, and the electromagnetism that constitutes each aforementioned magnet unit. The inflow current of the iron or the variation pattern of the inflow current; and the adjustment unit are capable of individually adjusting the aforementioned setting conditions of the aforementioned magnet unit based on the aforementioned optimal solution.

The aforementioned sputtering device can also be connected to a device for measuring the film quality of the film-forming material on the aforementioned substrate, and automatically obtains the aforementioned measured values, calculates the aforementioned optimal solution, and adjusts the aforementioned setting conditions according to the aforementioned optimal solution.

The above-mentioned target may be a plate-shaped target provided for a planar cathode or a cylindrical target provided for a rotating cathode. It can also be one or more magnet units corresponding to one target.

The position of the said magnet unit means the relative positional relationship between the target material corresponding to a magnet unit, and this magnet unit. That is, the relative position of the magnet unit with respect to the arbitrary reference plane parallel to a target is shown about a flat target. Regarding the cylindrical target, the relative position of the magnet unit with respect to the rotation center axis of the target is shown.

The movement pattern of the magnet unit means a pattern of temporal change in the position of the magnet unit when film formation is performed on one substrate while changing the position of the magnet unit.

The current flowing into the magnet unit refers to the current flowing through the coil in order to generate a magnetic force when a part or all of the magnets constituting the magnet unit are electromagnets.

The variation pattern of the flowing current of the magnet unit refers to a temporal change pattern of the flowing current of the magnet unit when film formation is performed on one substrate while varying the flowing current of the magnet unit.

The said film quality contains one or more of the physical property value which expresses the characteristic of the film formed by the said sputtering apparatus. The aforementioned physical property values for expressing the characteristics of the film are, for example, film thickness, sheet resistance, light transmittance, film stress, refractive index, etching characteristics, and film density.

The measured value of the film quality of the film-forming material on the substrate includes measurement data, and the measurement data is related to the film quality of the film-forming material at a plurality of measurement points on the substrate.

The aforementioned input information may further include more than one information about factors that affect the distribution of film quality. Factors affecting the distribution of the aforementioned film quality include, for example, the type of the aforementioned film-forming material, the surface shape of the aforementioned target material, the voltage applied to the aforementioned target material, the discharge time, the type of sputtering gas, and the pressure during film formation.

The optimal solution calculation unit is configured to calculate an optimal solution that satisfies at least one of the following of the management value of the predetermined film quality distribution based on the input information: the position of each of the aforementioned magnets, the movement pattern of each of the aforementioned magnet units , the inflow current of the electromagnet constituting each of the magnet units, and the variation pattern of the inflow current of the electromagnet constituting each of the magnet units.

As the method of calculating the optimum solution, for example, a machine learner that learns actual film formation results, simulation based on a mathematical model, and a degradation model that reconstructs a part of the mathematical model that has a large computational load can be used. In addition, the aforementioned machine learner, the aforementioned mathematical model, and the degradation model that directly output the aforementioned optimal solution can also be used, and a combination of the following two can also be used: one of the aforementioned two is for any aforementioned optimal solution. The candidate output of the solution is the aforementioned machine learner, or the aforementioned mathematical model, or the degradation model; the two of the aforementioned two are mathematical optimization programs that search for the candidate of the aforementioned optimal solution that predicts the aforementioned membrane mass distribution to become the best.

A method for controlling a sputtering device according to an aspect of the present invention is used to control a sputtering device. The sputtering device includes: one or more targets arranged to face the substrate and composed of a film-forming material; and one The above magnet unit is configured on the back of the aforementioned target; in the control method of the aforementioned sputtering device, the optimal solution of the setting conditions related to at least one of the aforementioned magnet units is calculated according to the input information, and the aforementioned input information system includes at least The above-mentioned set conditions and the measured value of the film quality of the film-forming material on the aforementioned substrate formed by the aforementioned sputtering device, the aforementioned set conditions include at least one of the following: the position of each aforementioned magnet unit, the position of each aforementioned magnet unit The movement pattern and the inflow current or inflow current variation pattern of the electromagnets constituting each of the above-mentioned magnet units; the above-mentioned setting conditions of the above-mentioned magnet units are individually adjusted according to the above-mentioned optimal solution.

A control device for a sputtering device according to an aspect of the present invention is used to control a sputtering device, and the sputtering device includes: one or more targets arranged to face a substrate and made of a film-forming material; and one The above magnet unit is configured on the back side of the aforementioned target; the control device for the aforementioned sputtering device is provided with: an optimal solution calculation part, which calculates an optimal solution of setting conditions related to at least one of the aforementioned magnet units based on input information, The aforementioned input information system includes at least the aforementioned setting conditions and the measured value of the film quality of the film-forming material on the aforementioned substrate formed by the aforementioned sputtering device, and the aforementioned setting conditions include at least one of the following: the position of each aforementioned magnet unit . The pattern of movement of each of the aforementioned magnet units and the pattern of inflow or variation of inflow current of the electromagnets constituting each of the aforementioned magnet units. [Efficacy of the invention]

According to the present invention, the uniformity of film adhesion and equipment utilization rate can be improved.

Embodiments of the present invention will be described below with reference to the drawings.

[First Embodiment] [Basic Configuration of Sputtering Apparatus 100 ] FIG. 1 is a schematic cross-sectional view of a sputtering device 100 according to an embodiment of the present invention. In FIG. 1 , the X-axis, Y-axis, and Z-axis represent three-axis directions perpendicular to each other, and the Z-axis corresponds to the vertical direction (height direction).

The sputtering device 100 is a magnetron sputtering device and includes a vacuum chamber 1 , a substrate holder 2 , a target 3 , a back plate 4 , a plurality of magnet units 5 and an anti-adhesion plate 6 . The sputtering device 100 may also be a vane-type vertical sputtering device, or may be an in-line vertical sputtering device. In addition, when the size of the substrate is not more than a predetermined size, the sputtering device 100 may be a horizontal sputtering device.

The vacuum chamber 1 is connected to a vacuum pump 7, and is capable of evacuating the inside or maintaining a predetermined reduced pressure atmosphere (atomosphere). The substrate holder 2 is disposed inside the vacuum chamber 1 and supports the substrate W in a vertical posture. The vacuum chamber 1 and the substrate holder 2 are typically connected to ground potential. The substrate W is, for example, a rectangular glass substrate having a width of 1,850 mm or more and a length of 1,500 mm or more.

Although not shown in the figure, the vacuum chamber 1 is provided with an inlet for the substrate holder 2 and an outlet for the substrate holder 2 . The above-mentioned import entrance and export exit may be common or may be separated. The inlet and outlet are configured to be openable and closable via gate valves (not shown) or the like.

The target 3 is composed of a film-forming material for forming a film on the substrate W. Typical examples of the film-forming material include metals, alloys, metal oxides, metal nitrides, and synthetic resins. In this embodiment, a conductive metal or alloy target is used.

The target material 3 may be an ingot target or a sintered body target. The number, size, and arrangement of the targets 3 are not particularly limited. In this embodiment, the target 3 is composed of a single rectangular plate with an area larger than the substrate W, and is arranged in the vacuum chamber 1. The center faces the substrate W along the X-axis direction with a predetermined distance (TS distance, that is, the distance between the target and the substrate).

The back plate 4 is a metal plate supporting the back surface of the target 3 , and is fixed to the vacuum chamber 1 via the insulating member 11 . The backplate 4 is typically bonded to the target 3 via a filter material such as indium. The backplane 4 is connected to a power supply source 8 . The power supply source 8 is disposed outside the vacuum chamber 1 and has an RF (radio frequency; radio frequency) power supply or a direct current (Direct Current; hereinafter referred to as DC) power supply.

The plurality of magnet units 5 are arranged so as to face the back surface (non-sputtering surface) of the target 3 with the back plate 4 interposed therebetween. The plurality of magnet units 5 constitute a magnetic circuit for forming a magnetic field on the surface (sputtering surface) of the target 3 .

FIG. 2 is an enlarged view of the magnet device 5 . The magnet unit 5 has a first magnet 51 , a second magnet 52 , and a yoke 53 supporting the first magnet 51 and the second magnet 52 . The end portion of the first magnet 51 on the target 3 side and the end portion of the second magnet 52 on the target 3 side are magnetized to opposite magnetic poles, respectively. The shape and arrangement of the first magnet 51 and the second magnet 52 are not particularly limited, but in this embodiment, the first magnet 51 is formed in a straight line extending along the Z-axis direction, and the second magnet 52 is formed to surround The periphery of the first magnet 51 is in the shape of a rectangular ring. The shape and number of the first magnet 51 and the second magnet 52 constituting the magnetic circuit are not limited to this example, and can be set arbitrarily.

The anti-adhesion plate 6 is arranged between the substrate holder 2 and the target material 3, and prevents sputtered substances (film-forming materials) flying from the target material 3 from adhering to the inner surface of the side wall of the vacuum chamber 1 and the outer peripheral area of the substrate W. (the peripheral portion of the substrate holder 2 ), and a plasma space P for generating plasma is defined between the target material 3 and the substrate holder 2 . A gas introduction line 9 for introducing a sputtering gas such as Ar (argon gas) into the plasma space P from a gas source 9 s is attached to the vacuum chamber 1 .

When film formation is performed on the substrate W by the sputtering device 100 , the sputtering gas is introduced into the plasma space P from the gas introduction line 9 , and RF power or DC power is input to the target from the power supply source 4 through the back plate 4 3. In this way, a magnetron discharge is generated in the plasma space P. The plurality of magnet units 5 disposed on the back of the target 3 form a magnetic field perpendicular to the electric field on the surface of the target 3 and confine electrons in the plasma near the surface of the target 3 . Thereby, even with a small sputtering power, the electron density is increased, and the amount of ion intrusion into the target material is increased.

In the magnetron sputtering device, the higher the horizontal magnetic flux density (magnetic flux density perpendicular to the electric field) of the target surface (sputtering surface), the higher the erosion rate of the target surface caused by the plasma, and the Here, since more film-forming material is sputtered from the target surface, it is possible to form a film on the substrate surface at high speed. Typically, in the surface of the target material 3, in the region where the magnetic flux density of the horizontal magnetic field B of each magnet unit 5 is higher, the film adhesion speed of the surface region of the substrate W opposite to the region has a relative Other surface areas tend to be higher. Therefore, in order to make the film quality distribution on the substrate W uniform, it is necessary to strictly control the magnetic flux density distribution of the horizontal magnetic field B on the surface of the target 3 .

[Explanation that the film quality distribution can be adjusted by adjusting the position of the magnet unit in the X-axis direction] For example, when the position of the magnet unit in the X-axis direction is fixed, as the erosion of the target surface progresses, the distance from the target surface to the magnet unit gradually approaches, resulting in a higher horizontal magnetic flux density on the target surface. In addition, as shown in (A) and (B) in Fig. 3, in the area of the target surface, the higher the horizontal magnetic flux density is, the faster the erosion 3e is carried out, so the horizontal magnetic flux density in the surface of the target 3 The difference in flux density appears significantly over time. Therefore, as the number of sheets processed increases, the uniformity of film attachment to the substrate W tends to deteriorate.

Therefore, as shown in (C) in FIG. 3 , in order to reduce the horizontal magnetic flux density in the surface region of the target 3 where the erosion 3 e proceeds at a high speed, if the magnet unit 5 constituting the magnetic circuit is moved away from the target 3, the direction of the surface can be moved to suppress the acceleration of the horizontal magnetic flux density in this region, so as to achieve the homogenization of the film adhesion.

In addition, when part or all of the first magnet 51 and the second magnet 52 constituting the magnetic circuit are electromagnets, not only by adjusting the position of the magnet unit 5 in the X-axis direction, but also by adjusting the position of the first magnet 51 and the second magnet 52. The magnitude and direction of the current flowing into the coil of the second magnet 52 can also adjust the horizontal magnetic flux density in the surface area of the target 3 and achieve homogenization of the film adhesion amount.

[Explanation that the film quality distribution can be adjusted by adjusting the swing of the magnet unit in the Y-axis direction] Since only a limited range of the target 3 is in an eroded state, the use efficiency of the target is low, so a technique of eroding a wider range by swinging the magnet unit 5 in the Y-axis direction is known (refer to Patent Document 1). .

Usually, since the erosion by the single magnet unit 5 oscillating in the Y-axis direction at a constant speed is the fastest at the oscillating center, the surface shape of the target is bowl-shaped. (A) and (B) in FIG. 4 respectively show the change of the surface shape of the target 3 after a predetermined time elapses from the start of sputtering, and the position of the magnet unit 5 relative to the target 3 in the Y-axis direction. Change of time. Since the closer the distance between the surface of the target 3 and the magnet unit 5 in the central portion of the bowl on the surface of the target 3, the faster the speed, as shown in (B) in FIG. 4 , the erosion of the central portion 3e The difference in the rate of progress between -c and the erosion sides 3e-s becomes more pronounced over time.

Therefore, when the swing continues at a constant speed, the speed balance between the eroded central part 3e-c and the eroded side parts 3e-s changes, and the speed difference between the two will become more significant as the erosion progresses, resulting in membrane quality. The distribution changes and makes the use efficiency of the target material lower.

Therefore, in order to keep the speed balance between the erosion of the central portion 3e-c and the erosion of the two side portions 3e-s as shown in (C) in FIG. (or) delaying the moving speed at both ends of the swing, so that the magnet unit 5 stays longer around the area of the eroded side portions 3e-s, thereby suppressing changes in film quality distribution and maintaining homogeneous film quality. Specifically, it is possible to extend the time during which the magnet unit 5 stays near the end of the swing (refer to countermeasure example 1 of (C) in FIG. 4 ), set the time for the magnet unit 5 to stop at the end of the swing (see Countermeasure example 2), elongate the swing range of the magnet unit 5 (refer to countermeasure example 3 in the same figure), or arbitrarily combine these countermeasure example 1 to countermeasure example 3 and other methods.

In addition, when a part or all of the first magnet 51 and the second magnet 52 constituting the magnetic circuit are electromagnets, by adjusting the position of the magnet unit 5 in the swing, the flow through the first magnet 51 and the second magnet 51 is changed. The current of the coil of the magnet 52 (hereinafter referred to as the variation pattern of the flowing current) has the same effect as adjusting the movement pattern of the magnet unit 5 in the Y-axis direction. Specifically, the current is increased when the magnet unit 5 is located near the end of the swing, and the current is decreased when it is located near the center of the swing, thereby suppressing changes in the film quality distribution.

As described above, in order to maintain the uniformity of the film quality, as the setting conditions of the magnet unit 5, the position of the magnet unit 5 in the X-axis direction, the movement pattern in the Y-axis direction, the inflow current or the inflow current fluctuation pattern are changed with the passage of time. is important.

However, since the rate of progress of erosion is affected by various factors such as pressure, applied voltage, inflow of sputtering gas, target material, and quality of the target, it is difficult to accurately predict the progress of erosion. In addition, the difference between the actual and predicted progress of erosion amplifies rapidly over time because regions with higher horizontal flux densities erode more rapidly.

Therefore, it is difficult to pre-set the optimal position of the magnet unit in the X-axis direction, the movement pattern in the Y-axis direction, and the inflow current or inflow current variation pattern as time coefficients. In fact, a series of operations must be performed periodically, that is, : Check the film adhesion state of the substrate to be filmed, stop the device, adjust the position of the magnet unit in the X-axis direction, the movement pattern in the Y-axis direction, and the inflow current or inflow current variation pattern. Execution of this work becomes a factor of lowering the device utilization rate, and this problem is more likely to occur remarkably as the size of the substrate increases.

Therefore, in this embodiment, in order to improve the uniformity of film deposition and device utilization, the sputtering device 100 is configured as follows.

[Detailed description of the sputtering device] [Magnet unit 5] FIG. 5 is a front view showing an arrangement form of a plurality of magnet units 5 viewed from the X-axis direction. In the example shown in this figure, each magnet unit 5 is made up of a first block 5a and a pair of second blocks 5b, the first block 5a is longer in the height direction (Z-axis direction); 5b is disposed at both ends of the first block 5a; the first magnet 51 and the second magnet 52 shown in FIG. 2 are respectively disposed at the first block 5a and the second block 5b. And the magnet unit 5 which consists of a set of the 1st block 5a and a pair of 2nd block 5b is arrange|positioned in the horizontal direction (Y-axis direction) plurally (nine sets in the example shown in figure). Therefore, the magnetic circuit arranged on the back surface of the target 3 is divided into 27 places in total.

In each magnet unit 5, the length of the first piece 5a along the Z-axis direction is formed to be longer than the second piece 5b, but not limited thereto, the first piece 5a and the second piece 5b can also be formed according to the same length . The number of blocks constituting each magnet unit 5 is not limited to three, but may be two or four or more. The arrangement number of the magnet units 5 is not limited to nine, and may be less or more than this number. That is, the number of divisions of the magnetic circuit constituted by a plurality of magnet units 5, the size of the divided magnetic circuit, etc. are not limited to the illustrated example, and the film adhesion amount can be adjusted according to the size of the target material 3 or the substrate W. The position on the substrate W, the in-plane distribution (distribution in plane) of the film deposition amount on the substrate W as a target, etc. are set arbitrarily.

The sputtering apparatus 100 further includes: an adjusting unit 10 capable of individually adjusting the relative distances of the first block 5 a and the second block 5 b of each magnet unit 5 relative to the target 3 ; and a control device 20 controlling the adjusting unit 10 .

[adjustment unit 10] FIG. 6 is a top view of the schematic configuration of the adjustment unit 10 viewed from the Z-axis direction. The adjustment unit 10 has a plurality of drive units 11 arranged outside the vacuum chamber 1 and arranged corresponding to the first block 5 a and the second block 5 b of each magnet unit 5 . Each driving part 11 is constituted by, for example, a driving cylinder or a driving motor having a driving shaft 11a and a driving shaft 11b connected at one end to the first block 5a and the second block 5b. The drive shaft 11a moves the first block 5a and the second block 5b toward or away from the target 3 by expanding and contracting along the X-axis direction. The drive shaft 11b moves the first block 5a and the second block 5b in a direction horizontal to the target 3 by expanding and contracting in the Y-axis direction.

In addition, when a part or all of the magnets constituting each magnet unit 5 are electromagnets, the adjustment unit 10 may also include a device for adjusting the current flowing through each electromagnet. The device for adjusting the current flowing through the electromagnet can be adjusted to flow a constant current normally, or can be adjusted to change the inflow current in conjunction with the swing of the magnet unit 5 in the Y-axis direction.

The adjustment unit 10 can be set to be manually adjusted by the operator to adjust the position of each magnet unit 5 in the X-axis direction, the movement pattern in the Y-axis direction, and the inflow current or the inflow current variation pattern. The control command automatically adjusts the position in the X-axis direction, the movement pattern in the Y-axis direction, and the inflow current or inflow current variation pattern.

[control device 20] The control device 20 is composed of a computer including a CPU (Central Processing Unit), an internal memory, an I/O interface, and the like. In this embodiment, the control device 20 controls the overall operation of the sputtering device 100 including the adjustment unit 10 , the vacuum pump 7 , the power supply source 8 , and the gas introduction line 9 .

FIG. 7 is a block diagram showing the structure of a part related to the present invention among the functions of the control device 20. As shown in FIG. The control device 20 has an input unit 21 , an optimal solution calculation unit 22 and an output unit 23 .

The input unit 21 has a function of acquiring various film forming conditions of each substrate during film formation and measured values of film quality formed on each substrate from the sputtering apparatus 100 . In addition, when the film quality of the film formed on each substrate is measured by a measuring device different from the sputtering device 100, the control device 20 also has the function of being connected to the measuring device and obtaining the film quality of the film formed on each substrate from the input unit 21. Function of the measured value of membrane quality.

Among the various film-forming conditions when the substrate is formed into a film, as the setting conditions of each magnet unit 5, it must include more than one of the following three, that is, the position of each magnet unit 5 in the X-axis direction, the position of the Y-axis direction, and the position of each magnet unit 5. In addition to the movement pattern and the inflow current or inflow current variation pattern, it may also include the type of film-forming material constituting the target 3, the consumption amount of the target 3 (the surface shape of the target 3), and the Applied voltage (input voltage from the power supply source 8 ), inflow of sputtering gas, chamber internal pressure, and the like.

The measured value of the film quality of the film formed on each substrate is the measured value of the film quality at the measurement point in a plurality of specific positions on the substrate W. The arrangement of measurement points is not particularly limited, but from the viewpoint of managing the distribution of the film quality of the film formed on each substrate, ideally, the film quality should be widely arranged on the substrate W and/or included in the in-plane of the substrate W. for extremely large or extremely small positions. These measurement points may be determined in advance before film formation starts, or may be arbitrarily determined after film formation.

The optimal solution calculation section 22 calculates the optimal solution (or optimal value) of the setting condition of at least one magnet unit 5 according to the input information, the input information at least includes the setting condition and the sputtering device 100 is the measured value of the film quality of the film-forming material on the substrate W formed into the film.

The optimum solution calculation unit 22 has the function of calculating the optimum position in the X-axis direction, the movement pattern in the Y-axis direction, and the inflow current of each magnet unit 5 that can obtain the uniformity of the film quality based on various input information obtained by the input unit 21. Or the function of changing the pattern of inflow current. Details of the optimal solution calculation unit 22 will be described below.

The optimal solution calculation unit 22 in this embodiment is composed of a prediction unit 221 , a correction unit 222 and an optimization unit 223 .

The predicting unit 221 calculates a predicted value of the homogeneity of the film quality related to the set condition individually of the arbitrary magnet unit. The prediction unit 221 uses various film forming conditions as arguments, and uses the predicted value of the film quality when film forming is assumed to be performed under the conditions as a function of a return value. The calculation method of the predicted value of the film quality is not particularly limited. In this embodiment, a machine learner is used, and the machine learner is made to learn the relationship between various film forming conditions and film quality in advance.

The algorithm of the machine learner is not particularly limited, and can be applied to one of multiple linear regression, neural network, decision tree, support vector machine (support vector machine) or an overall learning model combining these methods.

The arguments of the prediction unit 221 must include the position of each magnet unit 5 in the X-axis direction, the movement pattern in the Y-axis direction, and the inflow current or the inflow current variation pattern. Further, the film-forming conditions that affect the film quality distribution such as the type of film-forming material, the surface shape of the target, the voltage applied to the target, the discharge time, the type of sputtering gas, and the film-forming pressure, etc., Adding it to be included in the argument makes it possible to construct a machine learner with higher accuracy.

The predicted value of the film quality as the return value of the prediction unit 221 is the predicted value of the film quality at all the measurement points on the substrate W actually. The reason why the measurement point is the same as that of the actual substrate W is that it is necessary to compare with the measured value of the actual film quality acquired by the input unit 21 .

By inputting the actual film formation conditions into the arguments of the prediction unit 221, the predicted value of the film quality during actual film formation can be calculated. However, since the film quality is affected by the position of each magnet unit 5 in the X-axis direction, the movement pattern in the Y-axis direction, the inflow current or the flow pattern of the inflow current, pressure, applied voltage, sputtering gas inflow, target material, target material, etc. It is difficult to measure all these factors due to the influence of various factors such as the quality difference of the material, so it is rare that the predicted value of the film quality is consistent with the measured value in the actual film formation.

Therefore, in order to make the predicted value of the film quality of the actual film consistent with the measured value, it is necessary to correct the predicted value of the film quality. The correction unit 222 compares the predicted value and the measured value of the film quality during actual film formation, and performs calculation of the correction parameter and correction of the predicted value of the film quality. Since the influence of the correction is small if the prediction accuracy of the prediction unit 221 is high enough, the method of correction by the correction unit 222 may be simple addition or multiplication.

By correcting the predicted value of the film quality calculated by the predicting unit 221 by the correcting unit 222 , the film quality can be predicted for any film forming conditions. Hereinafter, the predicted value of the film quality corrected by the correction unit 222 will be described as a corrected predicted value of the film quality.

The optimization unit 223 searches for a film forming condition that can obtain the best predicted value of the corrected film quality. In this embodiment, a mathematical optimization algorithm is used to search for the position of each magnet unit 5 in the X-axis direction, the movement pattern in the Y-axis direction, and Incoming current or incoming current variation pattern. The statistic representing the homogeneity of the predicted value of the corrected film quality is generally used as an index of homogeneity in the field of sputtering (Max-Min)/(Max+Min) (Max: maximum film thickness; Min: film thickness Minimum value) and coefficient of variation. As the mathematical optimization algorithm, for example, gradient descent method, grid search, brute force method, Bayesian optimization, etc. may be used.

According to this embodiment, it is possible to obtain the information (optimum film forming conditions) on how to set the homogeneity of the best film quality in the actual last film formation, that is: each magnet unit 5 on the X axis The position in the direction, the movement pattern in the Y-axis direction, and the inflow current or inflow current variation pattern. Since the erosion of the target material 3 is carried out in a time span ranging from several days to several weeks, according to research and judgment, if the time from the implementation of the last film formation to the end of the calculation of the optimum film formation conditions is relative to the erosion If the speed is short enough, the optimal film-forming condition is still an effective film-forming condition even at the time point when the calculation ends.

The output unit 23 transmits the position of each magnet unit 5 calculated by the optimal solution calculation unit 22 in the X-axis direction, the movement pattern in the Y-axis direction, and the inflow current or the inflow current variation pattern to the adjustment unit 10, and the adjustment unit 10 to make adjustments.

By using the control device 20 to automatically adjust the position of each magnet unit 5 in the X-axis direction, the movement pattern in the Y-axis direction, and the inflow current or inflow current variation pattern for each actual film formation data before the uniformity of the film quality deteriorates significantly , can maintain the homogeneity of membrane quality.

Furthermore, by referring to the actual film formation results when calculating the optimal solution, it is possible not only to respond to changes with the passage of time, but also to automatically absorb individual differences that exist among a plurality of devices, and to compare each device Make the best adjustments.

FIG. 8 is a flowchart showing an example of a processing procedure executed in the control device 20 of the present embodiment.

The input unit 21 acquires input information (step 101). The input information includes various film-forming conditions of each substrate during film-forming and measured values of the film quality of the film formed on each substrate.

Next, the optimum solution calculation unit 22 (prediction unit 221) calculates the predicted value of the homogeneity of the film quality of the film-forming material on the substrate W based on the input information acquired by the input unit 21, and determines based on the calculated predicted value. Whether the homogeneity of the membrane quality is within the target range (steps 102, 103).

Next, when the homogeneity of the film quality is not within the target range, the optimal solution calculation unit 22 (correction unit 222) compares the measured value of the film quality obtained by the input unit 21 with the predicted value calculated by the prediction unit 221, Correction coefficients for correcting the predicted values are determined (steps 104, 105).

Next, by setting conditions such as the position of each magnet unit 5 at which the corrected film quality prediction value becomes the best, the optimum solution calculation unit 22 (optimization unit 223) searches for the best solution that satisfies the target film quality homogeneity. solution (step 106).

Next, the output unit 23 individually calculates the adjustment amount for adjusting each current magnet unit 5 to the optimal solution based on the optimal solution calculated by the optimal solution calculation unit 22, and outputs the adjustment amount to the not-shown display unit ( Step 107). Alternatively, the output unit 23 generates a control command based on the calculated optimal solution of each magnet unit 5 , outputs the control command to the adjustment unit 10 , and sets the setting condition of each magnet unit 5 to the optimal solution.

According to the present embodiment as described above, whether or not the uniformity of the film quality of the material deposited on the substrate W is within a predetermined target range can be determined based on input information such as setting conditions of each magnet unit 5 and actual measurement values. Moreover, the optimal solution calculation part 22 can calculate the optimal solution of the setting conditions of each magnet unit 5 which can obtain the homogeneity of film quality based on these pieces of information.

In the conventional sputtering device (comparative example), the film quality homogeneity on the substrate W after film formation is periodically evaluated, and if the evaluation result is within the target range (below the management value), the current state maintenance process is maintained. If the evaluation result is out of the target range (exceeding the management value), the operation (that is, operation) of the device is stopped, and the position of each magnet unit 5 is manually adjusted. Therefore, it is necessary to stop the device every time the magnet unit 5 is adjusted, and thus a decrease in the device utilization rate poses a problem. In addition, because the adjustment operation of the position of each magnet unit 5 requires proficiency, the improvement of the device utilization rate is limited. In addition, in order to suppress the reduction of device utilization rate, the management value cannot be strictly set, so it is difficult to obtain stable homogeneity of film quality within a batch or between batches.

On the other hand, according to this embodiment, the position of each magnet unit 5 can be automatically adjusted without stopping the operation (that is, the operation) of the sputtering apparatus 100, so that the device productivity can be greatly improved. In addition, since the evaluation of the homogeneity is performed based on the calculated value of the film quality obtained by performing the sputtering process, the position of the magnet unit 5 can be adjusted before the uniformity of the film quality significantly deteriorates. In addition, since the management value can be set more strictly than that of the comparative example, it is possible to suppress the variation in homogeneity within a batch or between batches, thereby continuing stable film formation with uniform film quality.

[Second Embodiment] Next, a second embodiment of the present invention will be described. Fig. 9 is a schematic cross-sectional view of a sputtering device 200 according to another embodiment of the present invention. In FIG. 9 , the three-axis directions in which the X-axis, the Y-axis, and the Z-axis are perpendicular to each other are shown, and the Z-axis system corresponds to the up-down direction (height direction).

The sputtering device 200 includes a vacuum chamber 201 , a substrate holder 202 , a plurality of rotating cathodes RC, and an anti-adhesion plate 206 . A plurality of rotating cathodes RC are arranged at equal intervals along the Y-axis direction. Each rotating cathode RC system has: a cylindrical target 203; a cylindrical backing tube (backing tube) 204, which supports the inner peripheral surface of the target 203; and a magnet unit 205, which is arranged inside the target 203. .

The vacuum chamber 201 is connected to a vacuum pump 207, and is configured to be able to evacuate the inside or maintain a predetermined reduced pressure atmosphere (atmosphere). The substrate holder 202 is disposed inside the vacuum chamber 201 and supports the substrate W in a vertical holding posture. The vacuum chamber 201 and the substrate holder 202 are typically connected to ground potential. The substrate W is, for example, a rectangular glass substrate having a width of 1,850 mm or more and a length of 1,500 mm or more.

Each target 203 is configured to be rotatable about an axis parallel to the Z-axis direction (circumferential direction of the target 203 ). The target 203 is made of a film-forming material for forming a film on the substrate W. As shown in FIG. Typical examples of the film-forming material include metals, alloys, metal oxides, metal nitrides, and synthetic resins. In this embodiment, a conductive metal or alloy target is used.

Each back pipe 204 is a metal plate supporting the back surface of the target 203, and is connected to a power supply source provided outside the vacuum chamber 201, and has an RF power supply or a DC power supply (not shown).

A plurality of magnet units 205 are arranged inside each target 203 along the axis direction of each target 203 . The magnet unit 205 constitutes a magnetic circuit for forming a magnetic field on the surface of the target 203 facing the substrate W (sputtering surface). As described with reference to FIG. 2 , each magnet unit 205 has a first magnet 51 , a second magnet 52 and a yoke 53 supporting the first magnet 51 and the second magnet 52 .

The anti-adhesion plate 206 is arranged around the rotating cathode RC, and prevents the sputtered substance (film-forming material) flying from the target 3 from adhering to the inner surface of the side wall of the vacuum chamber 201 and the outer peripheral area of the substrate W (substrate holder). 2), and between the target 203 and the substrate holder 202, a plasma space P for generating plasma is defined. A gas introduction line 209 for introducing sputtering gas such as Ar (argon) into the plasma space P from a gas source 209 s is attached to the vacuum chamber 201 .

When forming a film on the substrate W by the sputtering device 200, the sputtering gas is introduced into the plasma space P from the gas introduction line 209, and each target 203 is rotated at a constant speed with the axis as the axis. The power supply source applies RF power or DC power to the target 203 through the back tube 204 , thereby generating magnetron discharge in the plasma space P.

In the sputtering device 200 , by rotating the target 203 around the axis of the target 203 , the erosion is uniformly performed in the circumferential direction of the target 203 . Therefore, the use efficiency of the target material 203 can be improved.

In this embodiment, as shown in FIG. 10 , each rotating cathode RC has a drive unit 211, and the drive unit 211 can move each magnet unit 205 along the radial direction of the target 203, and can move each magnet unit 205 along the direction of the target. The circumferential direction of the material 203 swings. By configuring each magnet unit 205 to be movable in the radial direction of the target 203, the sputtering rate of the target 203 can be controlled. In addition, by configuring each magnet unit 205 to be able to swing in the circumferential direction of the target 203 , the shape of the film to be formed can be manipulated to some extent. The drive unit 211 is configured to be able to adjust the swing width and swing speed of the magnet unit 205 .

[Explanation that the film quality distribution can be adjusted by adjusting the radial direction of the magnet unit] Generally speaking, the ideal is that the etching speed of multiple cylindrical cathodes (rotating cathodes) rotating side by side is equal, but due to the distance between the factors that affect the movement of electrons (anodes, other rotating cathodes), the target Due to the influence of slight quality differences, etc., it is sometimes impossible to obtain equal etching rates. In addition, sometimes different etching rates are intentionally set in order to obtain a desired film quality distribution. As the diameter of each target shrinks with erosion and the distance between the magnet unit becomes closer, the erosion speed is accelerated. However, when there are erosion speed differences among multiple rotating cathodes, the difference in erosion speed becomes as time goes by. Significantly, resulting in changes in the distribution of membrane mass. Therefore, in order to maintain the desired erosion rate balance, it is necessary to adjust the position of the magnet unit in the radial direction as the erosion progresses. In addition, when part or all of the magnets used in the magnet unit are electromagnets, the same effect can be obtained by adjusting the inflow current. That is, the etching speed of the target surface can be adjusted by the magnitude and direction of the current flowing through the coil of the electromagnet.

[Explanation that the film quality distribution can be adjusted by adjusting the swing of the magnet unit in the circumferential direction] The film thickness distribution on the substrate formed by the cylindrical target is influenced by the position of the magnet unit in the circumferential direction. In general, when the magnet unit is arranged at the position facing the substrate, it has a left-right symmetrical bell-shaped distribution, and when the magnet unit is arranged at a position rotated from the position facing the substrate, it is rotated from the peak position Left-right asymmetrical bell-shaped distribution of direction movement. This is because the position at which the target particles are released varies depending on the position of the magnet unit (see (A) and (B) in FIG. 11 ). A technique is known that utilizes this property to manipulate the film thickness distribution obtained by swinging the magnet unit in the circumferential direction during film formation ((A) in FIG. 12 ). As the erosion of the target material progresses, the diameter of the target material decreases, and the film thickness distribution also changes accordingly. In general, the film thickness distribution changes to a more gentle bell shape due to the influence of the particle release position away from the substrate ((B) in FIG. 12 ). As a countermeasure against this change, it is effective to adjust the swing pattern of the magnet unit in the circumferential direction ((C) in FIG. 12 ). As the erosion progresses, the film thickness distribution can be maintained by reducing the swing amplitude of the magnet unit and adjusting the swing speed so that the magnet unit stays at a position facing the substrate for a long time. In addition, when part or all of the magnets used in the magnet unit are electromagnets, the same effect can be obtained by adjusting the variation pattern of the inflow current according to the swing position.

The position of the magnet unit in the radial direction, the swing pattern in the circumferential direction, and the inflow current or inflow current variation pattern are the same as the position in the X-axis direction, the movement pattern in the Y-axis direction and the movement pattern in the Y-axis direction of each magnet unit 5 shown in the first embodiment. The concept corresponding to the inflow current or the inflow current variation pattern. Therefore, it can be seen that if the description of the first embodiment is replaced with the above part and explained, the first embodiment is also applicable to the rotating cathode. Similarly, this embodiment is also applicable to a planar cathode (first embodiment).

[control department] The sputtering apparatus 200 of the present embodiment further includes a control device 220 which controls the position of each magnet unit 5 and the like. FIG. 13 is a block diagram showing the configuration of a part related to the present invention among the functions of the control device 220 . Similar to the first embodiment, the control device 220 has an input unit 21 , an optimal solution calculation unit 22 and an output unit 23 .

In this embodiment, the configuration of the optimal solution calculation unit 22 is different from that of the above-mentioned first embodiment. The optimal solution calculation unit 22 in this embodiment is composed of a prediction unit 221 , a state estimation unit 224 and an optimization unit 223 . In addition, the function of the predicting unit 221 is also different from that of the predicting unit in the first embodiment.

The predicting unit 221 of this embodiment is a function that takes the film-forming conditions and the device state as hidden parameters as arguments, and uses the predicted value of the film quality when film-forming is performed under the film-forming conditions and device states to return a value. . The method of calculating the predicted value of the film quality is based on a mathematical model that reproduces the physical phenomena related to sputtering with a program.

The state of the device as a hidden parameter refers to a physical quantity whose value is unknown because there is no relationship between the measuring machine and a completely unknown factor that affects the film formation, such as the progress state of the erosion of the target, which is known to affect the film formation. , modeled as white noise, and present the model as a vector.

The film quality distribution can be predicted for any film forming conditions by inputting film forming conditions and an appropriate device state to the prediction unit 221 . Usually, since the state of the device as the hidden parameter is unknown, estimation of the state of the device is essential in order to use the prediction unit 221 . Therefore, it is the state estimation unit 224 that plays a role of estimating the state of the device using the actual film formation results.

The state estimation unit 224 calculates an estimated value of the state of the device using a maximum likelihood estimation method and a MAP (maximum a posteriori probability) estimation method based on actual film formation conditions and film formation results. For the calculation, various mathematical optimization algorithms such as the gradient descent method, Markov chain Monte Carlo methods, and the like can be used.

In the first embodiment, the error between the predicted value and the measured value of the film quality is mechanically compensated. In contrast, in the second embodiment, the problem of why the error occurs can be explained theoretically by estimating the state of the device. Therefore, there is an advantage that the reliability of the prediction is high, and even if the actual film formation result cannot be obtained for a long period of time, the uniformity of the film quality can be continuously maintained due to the change of the device state during the prediction period.

Both the correction unit 221 of the first embodiment and the state estimation unit 224 of the second embodiment are introduced for the purpose of improving prediction accuracy. Therefore, this state estimating unit 224 is regarded as one form of the correcting unit 221 .

FIG. 14 is a flowchart showing an example of the processing procedure executed in the control device 220 of this embodiment.

The input unit 21 acquires input information including film formation conditions and measured values of the sputtering apparatus 200 (step 201 ). Next, the optimal solution calculation unit 22 (prediction unit 221) calculates the predicted value of the homogeneity of the film quality of the film-forming material on the substrate W based on the input information acquired by the input unit 21, and determines the film quality based on the calculated predicted value. Whether the homogeneity of is within the target range (steps 202, 203).

Next, when the homogeneity of the film quality is not within the target range, the optimum solution calculation unit 22 (state estimation unit 224) calculates (estimates) the likelihood of the current device state based on the input information obtained by the input unit 21. is the maximum film forming condition (step 204).

Next, the optimum solution calculation unit 22 (optimization unit 223) sets conditions for the position of each magnet unit 205 that maximizes the likelihood of the device state, and searches for the optimum solution that satisfies the target film quality homogeneity. solution (step 205).

Next, the output unit 23 calculates the adjustment amount for adjusting each current magnet unit 205 to the optimal solution based on the optimal solution calculated by the optimal solution calculation unit 22, and outputs the adjustment amount to the display (not shown). Department (step 206). Alternatively, the output unit 23 generates a control command based on the calculated optimal solution of each magnet unit 205 , and sets the setting condition of each magnet unit 205 to the optimal solution via an adjustment unit (not shown).

As mentioned above, although embodiment of this invention was described, this invention is not limited to the said embodiment, It goes without saying that various changes can be added.

For example, in the above embodiment, it is set that the adjustment unit 10 automatically adjusts the positions of the magnet units 5, 205 according to the control commands from the control devices 20, 220, but it is not limited thereto. It may also be set so that the adjustment of the position of the magnet unit 5, 205 is performed by an operator. In this case, as for the magnet unit 5, 205 specified in the control unit 20, 220, it is only necessary to adjust the position according to the adjustment amount calculated by the control unit 20, 220, so it is not required to operate. The adjustment of the position of the magnet unit 5, 205 is performed quickly without the influence of the operator's proficiency.

In addition, in the above-mentioned embodiment, the control devices 20 and 220 are configured as a part of the sputtering device 100 , but it is not limited thereto, and may be configured independently of the sputtering devices 100 and 200 . For example, the control devices 20 and 220 may be configured as a part of a management device connected to a plurality of sputtering devices via a network. In this case, one control device 20, 220 can be used to evaluate the uniformity of the film quality in a plurality of sputtering devices, calculate the optimal solution for the position of the magnet unit, generate control instructions for adjusting the position of the magnet unit, etc. .

In addition, in the above-mentioned first embodiment, the example in which a plurality of magnet units 5 are arranged with respect to a single target 3 has been described. Controlled sputtering device is also applicable to the present invention. Also in this case, as schematically shown in (A) and (B) in FIG. It moves in the X-axis direction and swings in the Y-axis direction to obtain the required uniformity of film quality, thereby obtaining the same functional effect as that of the first embodiment.

In addition, in each of the above-mentioned embodiments, an example of application to a magnetron sputtering device in which a plurality of magnet units are respectively arranged on a plurality of targets has been described, but the magnetron sputtering in which a single magnet unit is arranged in a single target Devices are also suitable for use with the invention.

1: Vacuum chamber 2: Substrate holder 3: Target 3e: Erosion 3e-c: Erosion of central part 3e-s: Erosion on both sides 4: Backplane 5:Magnet unit 5a: first block 5b: Second block 6: Anti-adhesion plate 7: Vacuum pump 8: Power supply source 9: Gas introduction pipeline 9s: gas source 10: Adjustment unit 11: Insulation member 11a: drive shaft 11b: Drive shaft 20: Control device 21: Input part 22: Optimal Solution Calculation Department 23: Output section 51: The first magnet 52: second magnet 53: Yoke 100: Sputtering device 200: sputtering device 201: vacuum chamber 202: substrate holder 203: target 204: back tube 205:Magnet unit 206: Anti-adhesion plate 207: vacuum pump 209: Gas introduction pipeline 209s: gas source 211: drive department 220: Control device 221: Forecast Department 222: Correction department 223: Optimization Department 224: State Estimation Department B: horizontal magnetic field RC: rotating cathode ST101-ST107: Steps ST201-ST206: Steps P: plasma space W: Substrate

Fig. 1 is a schematic cross-sectional view of a sputtering device according to an embodiment of the present invention. [ Fig. 2] Fig. 2 is an enlarged view illustrating a configuration example of a magnet unit in the sputtering apparatus. [ Fig. 3 ] is a schematic diagram illustrating the relationship between the relative position of the magnet unit with respect to the target and the film quality homogeneity. [ Fig. 4 ] is a schematic diagram illustrating the suppression of temporal changes in film quality distribution by adjusting the swing of the magnet unit. [ Fig. 5 ] is a front view showing the arrangement form of the magnet units. [ Fig. 6] Fig. 6 is a schematic configuration diagram of an adjustment unit in the above-mentioned sputtering device. [ Fig. 7 ] is a block diagram showing the configuration of a control device in the above-mentioned sputtering device. [ Fig. 8] Fig. 8 is a flow chart showing an example of a processing procedure executed in the control device shown in Fig. 7 . [ Fig. 9] Fig. 9 is a schematic cross-sectional view of a sputtering device according to another embodiment of the present invention. [ Fig. 10 ] is a schematic configuration diagram of a rotating cathode in the sputtering apparatus shown in Fig. 9 . [ Fig. 11 ] is a schematic diagram illustrating the suppression of temporal changes in film quality distribution by adjusting the swing of the magnet unit. [ Fig. 12 ] is a schematic diagram illustrating the relationship between the swing position of the magnet unit relative to the target and the film quality homogeneity. [ Fig. 13 ] is a block diagram showing the configuration of a control device in the sputtering device shown in Fig. 9 . [ Fig. 14 ] is a flowchart showing an example of a processing procedure executed in the control device shown in Fig. 13 . [ Fig. 15] Fig. 15 is a schematic diagram illustrating a main part of a modified example of the configuration of the sputtering apparatus shown in Fig. 1 .

1: Vacuum chamber

2: Substrate holder

3: Target

4: Backplane

5:Magnet unit

6: Anti-adhesion plate

7: Vacuum pump

8: Power supply source

9: Gas introduction pipeline

9s: gas source

10: Adjustment unit

11: Insulation member

20: Control device

100: Sputtering device

P: plasma space

W: Substrate

Claims (10)

A sputtering device, comprising: More than one target, arranged to face the substrate and composed of film-forming materials; More than one magnet unit is arranged on the back of the aforementioned target; The control device is provided with an optimal solution calculation unit, and the aforementioned optimal solution calculation unit calculates an optimal solution of setting conditions related to at least one of the aforementioned magnet units based on input information, the aforementioned input information includes at least the aforementioned setting conditions and The measured value of the film quality of the film-forming material on the aforementioned substrate formed by the coating device, the aforementioned setting conditions include at least one of the following: the position of each aforementioned magnet unit, the movement pattern of each aforementioned magnet unit, and the configuration of each aforementioned magnet unit. The incoming current or pattern of incoming current variation of the electromagnet of the unit; and The adjustment unit is capable of individually adjusting the aforementioned setting conditions of the aforementioned magnet unit according to the aforementioned optimum solution. The sputtering device as described in claim 1, wherein the optimal solution calculation unit calculates the predicted value of the homogeneity of the film quality related to the respective aforementioned setting conditions of any of the aforementioned magnet units, and derives it based on the aforementioned predicted value Each of the above-mentioned setting conditions of the above-mentioned magnet units that can satisfy the predetermined film quality homogeneity set in advance. The sputtering device as described in Claim 2, wherein the above-mentioned optimum solution calculation part further includes: a correction part for correcting the above-mentioned predicted value according to the above-mentioned input information. The sputtering device as described in Claim 3, wherein the calibration unit performs calibration based on the input information and according to the estimation of the state of the sputtering device. The sputtering device as described in any one of claims 1 to 4, wherein the measured value of the film quality of the film-forming material on the aforementioned substrate includes measurement data, and the aforementioned measurement data is related to a plurality of preset measurements on the aforementioned substrate It is related to the film quality of the film-forming material at the point. The sputtering device as described in claim 5, wherein the film quality includes at least one of film thickness, sheet resistance, light transmittance, film stress, refractive index, etching characteristics, and film density. The sputtering device as described in any one of Claims 1 to 4, wherein the optimal solution calculation part uses a machine learner to calculate the aforementioned optimal solution, and the aforementioned machine learner has previously learned the relationship between film-forming conditions and film quality. relationship between. The sputtering device as described in any one of claims 1 to 4, wherein the aforementioned input information system further includes the type of the aforementioned film-forming material, the surface shape of the aforementioned target, the voltage applied to the aforementioned target, the discharge time, the sputtering At least one of the type of plating gas and the pressure during film formation. A control method of a sputtering device is used to control the sputtering device, and the aforementioned sputtering device has: More than one target arranged opposite the substrate and composed of a film-forming material; and More than one magnet unit is arranged on the back of the aforementioned target; In the control method of the aforementioned sputtering device, an optimal solution of setting conditions related to at least one aforementioned magnet unit is calculated based on input information, the aforementioned input information at least including the aforementioned setting conditions and the aforementioned film formed by the aforementioned sputtering device The measured value of the film quality of the film-forming material on the substrate, the aforementioned setting conditions include at least one of the following: the position of each of the aforementioned magnet units, the movement pattern of each of the aforementioned magnet units, and the inflow current of the electromagnet that constitutes each of the aforementioned magnet units Or the pattern of inflow current variation; The aforementioned setting conditions of the aforementioned magnet units are individually adjusted according to the aforementioned optimum solution. A control device for a sputtering device is used to control the sputtering device, and the aforementioned sputtering device has: More than one target arranged opposite the substrate and composed of a film-forming material; and More than one magnet unit is arranged on the back of the aforementioned target; The control device for the aforementioned sputtering device is equipped with: an optimal solution calculation section, which calculates an optimal solution of setting conditions related to at least one of the aforementioned magnet units based on input information, the aforementioned input information at least includes the aforementioned setting conditions and the optimal solution obtained from the aforementioned sputtering The measured value of the film quality of the film-forming material on the aforementioned substrate formed by the device, the aforementioned setting conditions include at least one of the following: the position of each aforementioned magnet unit, the movement pattern of each aforementioned magnet unit, and the configuration of each aforementioned magnet unit The inflow current of the electromagnet or the change pattern of inflow current.

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