TW202246041A - Polishing pads having improved pore structure - Google Patents
Polishing pads having improved pore structure Download PDFInfo
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- TW202246041A TW202246041A TW111105178A TW111105178A TW202246041A TW 202246041 A TW202246041 A TW 202246041A TW 111105178 A TW111105178 A TW 111105178A TW 111105178 A TW111105178 A TW 111105178A TW 202246041 A TW202246041 A TW 202246041A
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- Prior art keywords
- polishing
- prepolymer composition
- sacrificial material
- composition
- features
- Prior art date
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Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D18/00—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for
- B24D18/0045—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for by stacking sheets of abrasive material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
- B24D3/02—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent
- B24D3/20—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially organic
- B24D3/28—Resins or natural or synthetic macromolecular compounds
- B24D3/32—Resins or natural or synthetic macromolecular compounds for porous or cellular structure
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D2203/00—Tool surfaces formed with a pattern
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
本揭示案之實施例一般係關於拋光墊,及製造拋光墊之方法,且更特定言之,係關於用於在電子元件製造製程中對基板進行化學機械拋光(chemical mechanical polishing; CMP)之拋光墊。Embodiments of the disclosure relate generally to polishing pads, and methods of making polishing pads, and more particularly, to polishing for chemical mechanical polishing (CMP) of substrates in electronic component manufacturing processes pad.
化學機械拋光(chemical mechanical polishing; CMP)通常用於高密度積體電路之製造中,以平坦化或拋光沉積在基板上之材料層。典型CMP製程包括在存在包括磨料顆粒之拋光流體的情況下,使待平坦化之材料層與拋光墊接觸並移動拋光墊、基板或該兩者,且因而在材料層表面與拋光墊直接產生相對移動。CMP在半導體元件製造中之一種常見應用為塊狀膜的平坦化,例如,金屬前介電質(pre-metal dielectric; PMD)或層間電介質(interlayer dielectric; ILD)拋光,其中下伏二維或三維特徵會在待平坦化之層表面中形成凹槽及突起。CMP在半導體元件製造中之其他常見應用包括淺溝槽隔離(shallow trench isolation; STI)及層間金屬互連形成,其中CMP用以自其中安置有STI或金屬互連特徵之層的已暴露表面(場)移除通孔、接觸件或溝槽填充材料。Chemical mechanical polishing (CMP) is generally used in the manufacture of high-density integrated circuits to planarize or polish material layers deposited on a substrate. A typical CMP process involves bringing the layer of material to be planarized into contact with the polishing pad and moving the polishing pad, the substrate, or both in the presence of a polishing fluid comprising abrasive particles, and thereby creating a direct opposing surface between the surface of the material layer and the polishing pad. move. One common application of CMP in semiconductor device fabrication is the planarization of bulk films, for example, pre-metal dielectric (PMD) or interlayer dielectric (interlayer dielectric (ILD)) polishing, where the underlying two-dimensional or The three-dimensional features form grooves and protrusions in the surface of the layer to be planarized. Other common applications of CMP in semiconductor device fabrication include shallow trench isolation (shallow trench isolation; STI) and interlevel metal interconnect formation, where CMP is used to remove exposed surfaces from layers in which STI or metal interconnect features are disposed ( field) to remove via, contact, or trench fill material.
通常,基於拋光墊材料之材料性質及彼些材料性質對所需CMP應用之適用性來選擇上述CMP製程中所使用的拋光墊。可經調整以調諧拋光墊之效能以用於所需CMP應用的材料性質之一個實例為用以形成拋光墊之聚合物材料的孔隙度及與其相關之性質(如孔徑及結構)及材料表面凹凸體。將孔隙度引入拋光墊材料之方法可包括先將預聚物組成物與成孔劑(如水溶性材料或空氣)混合,再將預聚物組成物模製並固化成個別拋光墊或聚合物餅,並由此機加工(例如,車削)個別拋光墊。Typically, the polishing pads used in the above-described CMP processes are selected based on the material properties of the polishing pad material and the suitability of those material properties for the desired CMP application. An example of a material property that can be adjusted to tune the performance of a polishing pad for a desired CMP application is the porosity and properties associated therewith (such as pore size and structure) and material surface relief of the polymeric material used to form the polishing pad body. A method of introducing porosity into a polishing pad material may include mixing a prepolymer composition with a porogen such as a water-soluble material or air, and then molding and curing the prepolymer composition into individual polishing pads or polymer cakes , and thereby machine (eg, turn) individual polishing pads.
亦可使用除模製以外之技術來製造拋光墊,如經由增材製造。在使用增材製造技術(例如,3D列印)之拋光墊生產中,可選擇性地在空間上將預聚物組成物之液滴及成孔劑之液滴沉積在多個列印層中以形成拋光墊。遺憾地,儘管增材製造技術可在形成的墊內提供孔之精確放置,但預聚物組成物的相鄰液滴與成孔劑之間的相互混合(尤其在由相對較軟材料形成拋光墊的情況下)可導致所得孔之不良結構,此會阻礙可能另外由此產生之效能調諧機會。The polishing pads can also be fabricated using techniques other than molding, such as via additive manufacturing. In the production of polishing pads using additive manufacturing techniques (e.g. 3D printing), droplets of prepolymer composition and droplets of porogen can be selectively and spatially deposited in multiple printed layers to form a polishing pad. Unfortunately, although additive manufacturing techniques can provide precise placement of pores within the formed pads, intermixing between adjacent droplets of the prepolymer composition and the porogen (especially when polishing is formed from relatively soft materials) In the case of pads) can lead to poor structure of the resulting holes, which can hinder performance tuning opportunities that might otherwise result.
因此,此項技術中需要改良藉由增材製造技術形成之拋光墊內的孔結構之方法。Therefore, there is a need in the art for methods of improving the pore structure in polishing pads formed by additive manufacturing techniques.
本文所述實施例大體係關於可用於化學機械拋光(chemical mechanical polishing; CMP)製程中之拋光墊,及用於製造拋光墊之方法。更特定而言,本文中之實施例提供具有改良的孔特徵之拋光墊及形成拋光墊之增材製造方法。Embodiments described herein generally relate to polishing pads that can be used in chemical mechanical polishing (CMP) processes, and methods for making polishing pads. More particularly, embodiments herein provide polishing pads with improved pore characteristics and additive manufacturing methods for forming the polishing pads.
在一個實施例中,一種形成拋光墊之方法包括(a)根據預定的液滴施配圖案將預聚物組成物之液滴及犧牲材料組成物之液滴施配至先前已形成的列印層之表面上。該方法包括(b)至少部分地固化預聚物組成物之已施配液滴以形成列印層。該方法包括(c)依序重複(a)及(b)以形成其中形成有複數個孔特徵的拋光層。預聚物組成物包括多官能丙烯酸酯組分。包括多官能丙烯酸酯組分之預聚物組成物的已施配液滴在暴露於第一劑量之電磁輻射時的固化速率大於不具有多官能丙烯酸酯組分之預聚物組成物在暴露於相同第一劑量之電磁輻射時的固化速率。該複數個孔特徵包括限定在拋光層之表面中的開口、在該表面下方之拋光層中形成的空隙、包括犧牲材料組成物之成孔特徵,或其組合。In one embodiment, a method of forming a polishing pad includes (a) dispensing droplets of a prepolymer composition and droplets of a sacrificial material composition to a previously formed printed pad according to a predetermined droplet dispensing pattern. on the surface of the layer. The method includes (b) at least partially curing the dispensed droplets of the prepolymer composition to form a print layer. The method includes (c) sequentially repeating (a) and (b) to form a polishing layer having a plurality of hole features formed therein. The prepolymer composition includes a multifunctional acrylate component. Dispensed droplets of a prepolymer composition comprising a multifunctional acrylate component cure faster when exposed to a first dose of electromagnetic radiation than prepolymer compositions not having a multifunctional acrylate component when exposed to Curing rate at the same first dose of electromagnetic radiation. The plurality of pore features include openings defined in a surface of the polishing layer, voids formed in the polishing layer below the surface, pore-forming features comprising a sacrificial material composition, or combinations thereof.
在另一實施例中,一種形成拋光墊之方法包括(a)根據預定的液滴施配圖案將預聚物組成物之液滴及犧牲材料組成物之液滴施配至先前已形成的列印層之表面上。該方法包括(b)至少部分地固化預聚物組成物之已施配液滴以形成包括複數個孔特徵之列印層。該方法包括(c)依序重複(a)及(b)以形成拋光層。該預聚物組成物包括表面活性劑。該複數個孔特徵中之一個別者的孔特徵空間之體積包括經施配以形成對應孔特徵的犧牲材料組成物之體積的至少50%。該複數個孔特徵包括限定在拋光層之表面中的開口、在該表面下方之拋光層中形成的空隙、包括犧牲材料組成物之成孔特徵,或其組合。In another embodiment, a method of forming a polishing pad includes (a) dispensing droplets of a prepolymer composition and droplets of a sacrificial material composition to previously formed columns according to a predetermined droplet dispensing pattern on the surface of the printing layer. The method includes (b) at least partially curing a dispensed droplet of a prepolymer composition to form a printed layer including a plurality of hole features. The method includes (c) repeating (a) and (b) in sequence to form a polishing layer. The prepolymer composition includes a surfactant. The volume of the hole feature space of an individual one of the plurality of hole features comprises at least 50% of the volume of the sacrificial material composition dispensed to form the corresponding hole feature. The plurality of pore features include openings defined in a surface of the polishing layer, voids formed in the polishing layer below the surface, pore-forming features comprising a sacrificial material composition, or combinations thereof.
在另一實施例中,一種拋光墊包括複數個拋光元件。每一拋光元件包括個別表面,其形成拋光墊之拋光表面的一部分;及一或更多個側壁,其自該個別表面向下延伸以限定安置在拋光元件之間的複數個通道。拋光元件中之每一者中形成有複數個孔特徵。拋光元件中之每一者係由預聚物組成物及犧牲材料組成物形成。該複數個孔特徵中之一個別者的孔特徵空間之體積包括經施配以形成對應孔特徵的犧牲材料組成物之體積的至少50%。該複數個孔特徵包括限定在該拋光表面中的開口、在該拋光表面下方之拋光元件中形成的空隙、包括犧牲材料組成物之成孔特徵,或其組合。In another embodiment, a polishing pad includes a plurality of polishing elements. Each polishing element includes an individual surface forming a portion of the polishing surface of the polishing pad; and one or more sidewalls extending downwardly from the individual surface to define a plurality of channels disposed between the polishing elements. A plurality of hole features are formed in each of the polishing elements. Each of the polishing elements is formed from a prepolymer composition and a sacrificial material composition. The volume of the hole feature space of an individual one of the plurality of hole features comprises at least 50% of the volume of the sacrificial material composition dispensed to form the corresponding hole feature. The plurality of pore features include openings defined in the polishing surface, voids formed in polishing elements below the polishing surface, pore-forming features comprising a sacrificial material composition, or combinations thereof.
本文所述實施例大體係關於可用於化學機械拋光(chemical mechanical polishing; CMP)製程中之拋光墊,及用於製造拋光墊之方法。特定而言,本文所述拋光墊之特徵在於與使用習知方法所形成之拋光墊相比較而言改良的孔結構。Embodiments described herein generally relate to polishing pads that can be used in chemical mechanical polishing (CMP) processes, and methods for making polishing pads. In particular, the polishing pads described herein are characterized by improved pore structures compared to polishing pads formed using conventional methods.
在第1A圖中示意性地圖示通常與藉由習知增材製造技術形成的拋光墊(尤其係由相對較軟材料形成及/或使用高解析度列印形成之彼等拋光墊)相關聯之非所期望的孔結構。第1A圖為圖示例示性拋光墊之拋光層102a的一部分之示意性剖面視圖。拋光層102a之拋光材料104a可包括由預聚物組成物之液滴的聚合產生之不溶性聚合物。藉由結合預聚物組成物之液滴來佈置犧牲材料組成物之液滴,在拋光材料104a中形成複數個孔特徵106a。孔特徵106a可包括限定在拋光層102a之拋光表面108a中的開口。此處不良地限定了孔特徵106a,例如,具有不均勻直徑、不均勻深度、橫跨整個墊變化之不均勻尺寸分佈、不均勻形狀、橫剖面之扁平外觀、拋光材料104a在(例如)平行於或垂直於X-Y平面之方向上跨孔特徵106a合併、孔特徵106a中之每一者內的不連續性、作為經施配以形成對應孔特徵之犧牲材料組成物之體積的分數之低孔特徵空間,及其組合。Schematically illustrated in FIG. 1A are those commonly associated with polishing pads formed by conventional additive manufacturing techniques, especially those formed from relatively soft materials and/or using high-resolution printing. Undesired pore structure. FIG. 1A is a schematic cross-sectional view of a portion of a
可根據針對第1B圖中所示之待列印拋光層102b的列印設計佈局形成拋光層102a。在第1B圖中,每一待列印孔特徵106b延伸穿過列印層110a~110k中之多者,該等列印層110a~110k在Z方向上一者堆疊在另一者頂上。根據第1B圖,列印層110a、110c、110e及110g包括孔特徵空間,該等空間對應於佈置成與包括拋光材料104b之預聚物組成物的液滴相鄰之犧牲材料組成物112的液滴。無孔特徵空間(即,僅包括拋光材料104b)之其他列印層(例如,110b、110d及110f)以如所示出之交替佈置在Z方向上插入在列印層110a、110c、110e及110g之間。每對交替列印層可具有相同圖案,以使得預聚物組成物及犧牲材料組成物之液滴將被沉積在每一層中之相同位置處。額外列印層(例如,110h~110k)安置在列印層110g下方。在一些其他實施例中,包括孔特徵空間之列印層110a、110c、110e及110g被堆疊成彼此直接接觸,且省略無孔特徵空間之列印層(例如,110b、110d及110f)。在此些實施例中,犧牲材料組成物112之液滴將沉積在每一層中之相同位置處,以使得犧牲材料組成物112在Z方向上在個別孔特徵106b內為連續的。所得孔特徵結構可稱作「柱」。The
根據第1B圖之設計佈局,孔特徵106b將相對於彼此分佈在平行於拋光墊之拋光表面的X-Y平面之一個或兩個方向上(即,橫向地)。因此,孔特徵106b之至少部分將藉由插入其間之待列印拋光材料104b的至少部分在空間上分離,即,彼此間隔。孔特徵106b可與待列印之拋光表面108b連續。According to the design layout of FIG. 1B, the
大體而言,待列印拋光墊102b經設計以具有明確限定之孔特徵而無上述所得拋光層102a中顯而易見之任何缺點。據信,第1A圖中所示之不良限定的孔特徵106a係在固化之前預聚物組成物及犧牲材料組成物的相鄰液滴之間的相互混合之結果。另外,亦據信,在由相對較軟材料形成及/或使用高解析度列印形成之拋光墊的製造期間,可能更容易發生相互混合。In general, the
有利地,本文所述實施例提供了預聚物組成物及犧牲材料組成物的相鄰液滴之間與第1A圖中所示實例相比較而言減少的相互混合,從而產生了更佳限定之孔特徵。另外,減少的相互混合導致形成拋光層202(例如,在第2圖中示出),該拋光層202更密切對應於第1B圖中所示之待列印拋光層102b。Advantageously, embodiments described herein provide for reduced intermixing between adjacent droplets of prepolymer composition and sacrificial material composition compared to the example shown in Figure 1A, resulting in better defined hole features. Additionally, the reduced intermixing results in the formation of a polishing layer 202 (eg, shown in Figure 2) that more closely corresponds to the to-
第2圖為圖示根據本文所述實施例的拋光墊之拋光層202的一部分之示意性剖面視圖。如以下更詳細地描述,拋光層202之拋光材料204可包括硬或軟的配方。在拋光材料204中形成複數個孔特徵206。孔特徵206可包括限定在拋光層202之拋光表面208中的開口、形成於拋光表面208下方之拋光材料204中的空隙、安置在拋光表面208中之成孔特徵、安置在拋光表面208下方之拋光材料204中的成孔特徵,及其組合。此處,良好限定了孔特徵206,例如,具有如下各者中之一或更多者:均勻直徑、均勻深度、橫跨整個墊之均勻尺寸分佈、橫剖面中之圓形外觀、插入在相鄰孔特徵206之間的拋光材料204的分離、在孔特徵206中之每一者內的連續性、作為經施配以形成對應孔特徵之犧牲材料組成物之體積的分數之高孔特徵空間、與孔特徵106a相比較而言在徑向平面中(例如,在X-Y平面中)的較少散佈、與孔特徵106a相比較而言減少的深度,及其組合。FIG. 2 is a schematic cross-sectional view illustrating a portion of a
本文所述實施例提供了用以改良孔結構之一通用方法,該方法獨立於配方之其他態樣,如組分之極性、拋光材料之相對強度(例如,儲能模數或極限拉伸強度)、用於調整ζ(zeta)電位之添加劑、用於調諧吸水性之添加劑,或用於調諧機械性質之單體。本文所述實施例改良了孔結構,即便在諸如300 dpi或600 dpi之高解析度列印下亦如此。本文所述實施例提供具有可減少表面黏性之改良的表面固化之拋光墊。本文所述實施例提供具有可能有害的殘留單體之降低的濃度之拋光墊。本文所述實施例提供具有減少的內部結構應力位準(其可提高拋光墊之平整度)之拋光墊。The embodiments described herein provide a general approach to modify pore structure independent of other aspects of the formulation, such as polarity of components, relative strength of polishing materials (e.g., storage modulus or ultimate tensile strength) ), additives for adjusting ζ (zeta) potential, additives for tuning water absorption, or monomers for tuning mechanical properties. Embodiments described herein improve hole structure even at high resolution printing such as 300 dpi or 600 dpi. Embodiments described herein provide polishing pads with improved surface curing that can reduce surface stickiness. Embodiments described herein provide polishing pads with reduced concentrations of potentially harmful residual monomers. Embodiments described herein provide polishing pads with reduced internal structural stress levels, which can improve the planarity of the polishing pad.
本文所述實施例提供改良的孔結構,即便是對於使用相對軟的材料配方形成之拋光墊而言亦如此。據信,在習知襯墊製造製程期間,當與硬的材料配方相比較時,由於軟材料配方之更大親水性,因此軟拋光材料配方之預聚物液滴與犧牲材料的相鄰液滴會遭受增加的相互混合。然而,本文所述實施例克服了維持孔結構之挑戰,即便是使用更具親水性之配方亦如此。Embodiments described herein provide improved pore structure, even for polishing pads formed using relatively soft material formulations. It is believed that, during the conventional pad manufacturing process, the prepolymer droplets of the soft polishing material formulation are less compatible with the adjacent liquid of the sacrificial material due to the greater hydrophilicity of the soft material formulation when compared to the harder material formulation. The drops will suffer from increased intermixing. However, the embodiments described herein overcome the challenge of maintaining pore structure even with more hydrophilic formulations.
本文所述實施例提供包括多官能丙烯酸酯組分之預聚物組成物,當暴露在一定劑量之電磁輻射中時,該多官能丙烯酸酯組分增大了預聚物組成物之已施配液滴的固化速率。換言之,當暴露在同一劑量之電磁輻射中時,具有多官能丙烯酸酯組分之預聚物組成物的固化速率大於不具有多官能丙烯酸酯組分之預聚物組成物的固化速率。有利地,當與不具有多官能丙烯酸酯組分之預聚物組成物相比較而言時,本文所述實施例中之預聚物組成物的加速固化提供了預聚物組成物與犧牲材料組成物的相鄰液滴之間減少的相互混合。Embodiments described herein provide prepolymer compositions that include a multifunctional acrylate component that increases the dispensing of the prepolymer composition when exposed to a dose of electromagnetic radiation. The solidification rate of the droplet. In other words, when exposed to the same dose of electromagnetic radiation, the cure rate of the prepolymer composition with the multifunctional acrylate component is greater than the cure rate of the prepolymer composition without the multifunctional acrylate component. Advantageously, the accelerated curing of the prepolymer compositions in the embodiments described herein provides a combination of prepolymer compositions and sacrificial materials when compared to prepolymer compositions without the multifunctional acrylate component. Reduced intermixing between adjacent droplets of composition.
有利地,本文所述實施例提供包括表面活性劑之預聚物組成物,當與無表面活性劑之預聚物組成物相比較時,該預聚物組成物提供預聚物組成物與犧牲材料組成物的相鄰液滴之間減少的相互混合。Advantageously, the embodiments described herein provide a prepolymer composition comprising a surfactant which, when compared to a prepolymer composition without a surfactant, provides a prepolymer composition with a sacrificial Reduced intermixing between adjacent droplets of material composition.
本文所述實施例提供包括聚乙二醇單丙烯酸酯組分之犧牲材料組成物,該組分降低了在固化之後所得的成孔相之可流動性。有利地,與在無聚乙二醇單丙烯酸酯組分的情況下形成之拋光墊相比較而言,本文所述實施例中之降低的可流動性改良了所得孔特徵之結構。Embodiments described herein provide sacrificial material compositions that include a polyethylene glycol monoacrylate component that reduces the flowability of the resulting porogen phase after curing. Advantageously, the reduced flowability in the embodiments described herein improves the structure of the resulting pore features compared to polishing pads formed without the polyethylene glycol monoacrylate component.
儘管本文所述實施例大體係關於用於半導體元件製造中之化學機械拋光(chemical mechanical polishing; CMP)墊,但該等拋光墊及其製造方法亦適用於使用化學活性及化學非活性之拋光流體及/或不含磨料顆粒之拋光流體的其他拋光製程。另外,本文所述實施例可單獨地或組合地用於至少以下行業中:航空航天、陶瓷、硬碟驅動器(hard disk drive; HDD)、MEMS及奈米技術、金屬加工、光學元件及電光元件製造及半導體元件製造等。 例示性拋光系統 Although the embodiments described herein generally relate to chemical mechanical polishing (CMP) pads used in semiconductor device fabrication, such polishing pads and methods of making them are also applicable to the use of chemically active and chemically inactive polishing fluids And/or other polishing process of polishing fluid without abrasive particles. Additionally, the embodiments described herein may be used individually or in combination in at least the following industries: aerospace, ceramics, hard disk drives (HDD), MEMS and nanotechnology, metal processing, optical components, and electro-optic components manufacturing and semiconductor device manufacturing, etc. Exemplary Polishing System
第3圖為經配置以使用根據本文所述實施例形成之拋光墊400之例示性拋光系統300的示意性側視圖。在第4圖中進一步描述拋光墊400。FIG. 3 is a schematic side view of an
在此,拋光系統300之特徵在於平臺304及基板載體306,該平臺具有使用壓敏黏合劑緊固至其上之拋光墊400。基板載體306面向平臺304及安裝在其上之拋光墊400。基板載體306用以將安置在其中之基板308的材料表面推向拋光墊400之拋光表面,而同時圍繞載體軸線310旋轉。通常,平臺304圍繞平臺軸線312旋轉,而旋轉的基板載體306自平臺304之內徑向外徑來回掃掠,以便部分地減小拋光墊400之不均勻磨損。Here, polishing
拋光系統300進一步包括流體輸送臂314及襯墊調節器組件316。流體輸送臂314定位在拋光墊400之上且用以將拋光流體(如其中懸浮有磨料之拋光漿料)輸送至拋光墊400之表面。通常,拋光流體含有pH調節劑及其他化學活性組分(如氧化劑)以實現對基板308的材料表面之化學機械拋光。襯墊調節器組件316用以藉由在對基板308的拋光之前、之後或在其期間將固定的磨料調節盤318推向拋光墊400之表面而調節拋光墊400。將調節盤318推向拋光墊400包括使調節盤318圍繞調節器軸線320旋轉,及自平臺304之內徑向平臺304之外徑掃掠調節盤318。調節盤318用以研磨並復原拋光墊400之拋光表面,並自拋光墊400之拋光表面移除拋光副產物或其他碎屑。
拋光墊實例
The
本文所述拋光墊包括基礎層及安置在基礎層上之拋光層。拋光層形成拋光墊之拋光表面,且基礎層在待拋光之基板被推向拋光層時為拋光層提供支撐。基礎層及拋光層係由當固化時具有不同的材料性質之不同預聚物組成物形成。基礎層及拋光層係使用連續的逐層增材製造製程整體地且依序地形成。增材製造製程提供在拋光層與基礎層之間的具有連續聚合物相之拋光墊主體,從而消除了其間對黏合劑層或其他接合方法的需要。在一些實施例中,拋光層係由複數個拋光元件形成,該複數個拋光元件藉由安置於其間之凹槽及/或通道而橫跨拋光表面彼此分離。The polishing pads described herein include a base layer and a polishing layer disposed on the base layer. The polishing layer forms the polishing surface of the polishing pad, and the base layer provides support for the polishing layer when the substrate to be polished is pushed against the polishing layer. The base layer and the polishing layer are formed from different prepolymer compositions that have different material properties when cured. The base layer and the polishing layer are integrally and sequentially formed using a continuous layer-by-layer additive manufacturing process. The additive manufacturing process provides the body of the polishing pad with a continuous polymer phase between the polishing layer and the base layer, thereby eliminating the need for an adhesive layer or other joining method in between. In some embodiments, the polishing layer is formed from a plurality of polishing elements separated from one another across the polishing surface by grooves and/or channels disposed therebetween.
如本文中所使用,術語「孔特徵」包括限定在拋光表面中之開口、形成在拋光表面下方之拋光材料中的空隙、安置在拋光表面中之成孔特徵、安置在拋光表面下方之拋光材料中的成孔特徵,及其組合。成孔特徵通常包括水溶性犧牲材料,該水溶性犧牲材料在暴露於拋光流體時會溶解,從而在拋光表面中形成對應的開口及/或在拋光表面下方之拋光材料中形成空隙。在一些實施例中,水溶性犧牲材料在暴露於拋光流體時會溶脹,從而使周圍的拋光材料變形以在拋光墊材料表面處提供凹凸體。所得之孔及凹凸體理想地促進將液體及磨料運輸至拋光墊與待拋光之基板材料表面之間的界面,並相對於基板表面臨時地固定彼些磨料(磨料俘獲)以實現自基板表面之化學及機械材料移除。As used herein, the term "pore feature" includes openings defined in the polishing surface, voids formed in the polishing material below the polishing surface, pore-forming features disposed in the polishing surface, polishing material disposed below the polishing surface Hole-forming features in , and combinations thereof. Pore-forming features typically include a water-soluble sacrificial material that dissolves when exposed to a polishing fluid, thereby forming corresponding openings in the polishing surface and/or voids in the polishing material below the polishing surface. In some embodiments, the water-soluble sacrificial material swells when exposed to the polishing fluid, thereby deforming the surrounding polishing material to provide asperities at the surface of the polishing pad material. The resulting pores and asperities ideally facilitate the transport of liquid and abrasives to the interface between the polishing pad and the surface of the substrate material to be polished, and temporarily immobilize those abrasives relative to the substrate surface (abrasive capture) to enable separation from the substrate surface. Chemical and mechanical material removal.
如本文中所使用,術語「孔特徵空間」指示每一孔特徵之體積。當多個孔特徵合併在一起時,可根據待列印之拋光層的對應設計佈局來確定限定每一個別孔特徵之孔特徵空間的邊界線。舉例而言,當兩個孔特徵合併在一起時,可將待列印之孔特徵之間的平均距離用作已合併孔特徵之間的邊界線。As used herein, the term "pore feature space" refers to the volume of each pore feature. When multiple hole features are merged together, the boundary lines defining the hole feature space of each individual hole feature can be determined according to the corresponding design layout of the polishing layer to be printed. For example, when two holes are merged together, the average distance between the holes to be printed can be used as the boundary line between the merged holes.
如本文中所使用,術語「孔特徵密度」指示包括給定樣本之X-Y平面中的孔特徵之累積面積佔該給定樣本在X-Y平面中之總面積的百分比,如包括在拋光墊之拋光表面中或在平行於該拋光表面之X-Y平面中的孔特徵密度微區域中之孔特徵的累積面積。如本文中所使用,術語「孔隙度」指示孔特徵空間之體積佔給定樣本中之總體積的百分比。在其中如本文中所定義之孔特徵包括由犧牲材料形成之成孔特徵的實施例中,在從中溶解形成特徵之犧牲材料之後,量測孔特徵密度及孔隙度。As used herein, the term "pore feature density" refers to the cumulative area comprising pore features in the X-Y plane of a given sample as a percentage of the total area of the given sample in the X-Y plane, such as included in the polishing surface of a polishing pad Cumulative area of the hole features in the hole feature density micro-region in or in the X-Y plane parallel to the polishing surface. As used herein, the term "porosity" indicates the volume of pore-featured spaces as a percentage of the total volume in a given sample. In embodiments where the pore features as defined herein include pore-forming features formed from a sacrificial material, the pore feature density and porosity are measured after dissolving therefrom the sacrificial material from which the features were formed.
可使用任何適當方法來確定孔特徵密度、孔特徵空間、孔特徵結構、孔隙度及孔徑,如藉由使用掃描電子顯微鏡(scanning electron microscopy; SEM)或光學顯微鏡之方法。用於特徵化孔特徵密度、孔隙度及孔徑之技術及系統為此項技術中所熟知的。舉例而言,可藉由任何適當方法(例如,藉由電子顯微鏡影像分析,藉由原子力顯微鏡,藉由3D顯微鏡,等)來特徵化表面的一部分。在一個實施中,可使用位於美國新澤西州艾姆伍德公園之美國KEYENCE公司生產的VK-X系列3D UV雷射掃描共聚焦顯微鏡來執行孔特徵密度及孔徑分析。The characteristic pore density, characteristic pore space, characteristic pore structure, porosity and pore size can be determined using any suitable method, such as by methods using scanning electron microscopy (SEM) or optical microscopy. Techniques and systems for characterizing pore characteristic density, porosity and pore size are well known in the art. For example, a portion of the surface can be characterized by any suitable method (eg, by electron microscope image analysis, by atomic force microscopy, by 3D microscopy, etc.). In one implementation, pore feature density and pore size analysis can be performed using a VK-X series 3D UV laser scanning confocal microscope manufactured by KEYENCE Corporation of America, Elmwood Park, NJ, USA.
在一些實施例中,拋光墊之拋光材料可由不同預聚物組成物或不同比率之不同預聚物組成物形成,以提供獨特的材料性質。In some embodiments, the polishing material of the polishing pad can be formed from different prepolymer compositions or different ratios of different prepolymer compositions to provide unique material properties.
大體而言,本文所述方法使用增材製造系統(例如,2D或3D噴墨列印機系統)以逐層製程形成(列印)拋光墊的至少部分。通常,藉由在製造支撐物或先前已形成之列印層上依序沉積及至少部分地固化所需預聚物組成物及/或成孔犧牲材料前驅物組成物之液滴而形成(列印)每一列印層。有益地,增材製造系統及本文所述方法實現了每一列印層內(X-Y解析度)之至少微米級液滴放置控制,及每一列印層之厚度上(Z解析度)的微米級(0.1 μm至200 μm)控制。由增材製造系統及本文所述方法提供之微米級X-Y及Z解析度促進了本文所述孔特徵之理想及可重複圖案的形成。因此,在一些實施例中,用以形成拋光墊之增材製造方法亦賦予由其形成之拋光墊的一或更多種出眾的結構特性。In general, the methods described herein form (print) at least a portion of a polishing pad in a layer-by-layer process using an additive manufacturing system (eg, a 2D or 3D inkjet printer system). Typically, it is formed by sequentially depositing and at least partially curing droplets of the desired prepolymer composition and/or pore-forming sacrificial material precursor composition on a fabrication support or a previously formed print layer (column print) each print layer. Beneficially, the additive manufacturing system and methods described herein enable at least micron-scale drop placement control within each printed layer (X-Y resolution), and micron-scale (Z resolution) through the thickness of each printed layer ( 0.1 μm to 200 μm) control. The micron-scale X-Y and Z resolution provided by the additive manufacturing system and methods described herein facilitates the formation of desirable and repeatable patterns of the hole features described herein. Thus, in some embodiments, the additive manufacturing process used to form the polishing pad also imparts one or more superior structural properties to the polishing pad formed therefrom.
如本文中所使用,術語「高解析度列印」指示由犧牲材料組成物之四個或更少個相鄰液滴形成的孔特徵,如一至四個相鄰液滴。使用高解析度列印時,與預聚物組成物及犧牲材料組成物的液滴之間的相互混合相關聯之孔結構的負面變化更為顯著,因為與較低解析度列印相比較而言,孔特徵之尺寸實質性地減小。As used herein, the term "high resolution printing" refers to a well feature formed by four or fewer adjacent droplets of a sacrificial material composition, such as one to four adjacent droplets. Negative changes in pore structure associated with intermixing between droplets of prepolymer composition and sacrificial material composition are more pronounced when using high-resolution printing, as compared to lower-resolution printing In other words, the size of the hole features is substantially reduced.
第4圖為根據本文所述實施例之拋光墊400的示意性等角剖面視圖,該拋光墊的特徵在於選擇性佈置的孔特徵410。可將拋光墊400用作第3圖中所述之例示性拋光系統300的拋光墊400。在此,拋光墊400包括複數個拋光元件404,其係安置在基礎層406上且部分地安置在基礎層406內。增材製造製程允許用以分別形成基礎層406及包括拋光元件404的拋光層之不同預聚物組成物的共聚合,從而提供跨其間之界面邊界區域的聚合物材料之連續相。FIG. 4 is a schematic isometric cross-sectional view of a
拋光墊400具有約5 mm與約30 mm之間的第一厚度T(1)。拋光元件404藉由基礎層406的一部分在襯墊400之厚度方向上受支撐,該基礎層406具有在第一厚度T(1)的約1/3至約2/3之間的第二厚度T(2)。拋光元件404具有為第一厚度T(1)的約1/3至約2/3之第三厚度T(3)。如所示出,拋光元件的至少部分係安置在基礎層406的表面下,且其餘部分自其向上延伸出高度H。在一些實施例中,高度H為第一厚度T(1)的約1/2或更小。The
在此,複數個拋光元件404包括圍繞柱405安置且自柱405向外徑向延伸之複數個不連續(分段)的同心環407。在此,柱405安置在拋光墊400之中心處。在其他實施例中,當拋光墊400在拋光平臺上旋轉時,柱405的中心及因此同心環407的中心可偏離拋光墊400的中心,以在基板與拋光墊表面之間提供擦拭型相對運動。複數個拋光元件404之側壁及基礎層406之面朝上表面限定了複數個通道418,該複數個通道418係安置在拋光墊400中,在拋光元件404中的每一者之間及在拋光墊400之拋光表面401的平面與基礎層406的表面之間。複數個通道418實現了拋光流體橫跨拋光墊400的分佈及分佈至拋光墊400與將在其上拋光之基板的材料表面之間的界面。在此,拋光元件404具有平行於X-Y平面之上表面及大體上垂直之側壁,如在相對於垂直(正交於X-Y平面)約20°以內,或相對於垂直約10°以內。(數個)拋光元件404之寬度W(1)在約250 μm與約10mm之間,如在約250 μm與約5 mm之間,或在約1 mm與約5 mm之間。(數個)拋光元件404之間的間距P在約0.5 mm與約5 mm之間。在一些實施例中,寬度W(1)及間距P中之一者或兩者在拋光墊400之半徑上變化,以限定襯墊材料性質之區域。Here, plurality of polishing
拋光元件404包括安置於其中之複數個孔特徵410。當在橫剖面中檢視時,複數個孔特徵410可以任何所需的垂直佈置安置。舉例而言,在第4圖中,以分行佈置(示出了兩個行)垂直地安置複數個孔特徵410,其中每一行中之孔特徵410大體上垂直對準。在一些其他實例中,孔特徵410之在拋光元件404的深度方向上之列群組或個別列可在X-Y方向中之一者或兩者上偏移,以在拋光表面401下方提供對應孔特徵410,該等對應孔特徵410相對於安置於其上方及/或其下方之孔特徵410垂直交錯。可有利地使用孔特徵410之定向,以調整拋光材料相對於在其上被拋光之基板所施加的負載方向之順應性。因此,在一個實例中,可有利地使用交錯的孔特徵410以調整及/或控制由其形成之拋光墊的拋光平坦化效能。
在一些實施例中,個別孔特徵410可具有約600 μm或更小之高度,如約500 μm或更小、約400 μm或更小、約300 μm或更小、約200 μm或更小、約100 μm或更小、約50 μm或更小、約40 μm或更小、約30 μm或更小、約20 μm或更小,或約10 μm或更小。個別孔特徵410之高度通常為列印層中之每一者的厚度之倍數,例如,1倍或更多。舉例而言,列印層內之孔特徵的厚度可與被安置成與其相鄰之拋光材料的連續聚合物相之厚度相同。因此,若橫向安置在至少兩個依序沉積之列印層內的孔特徵在Z方向上對準或至少部分地重疊,則所得孔特徵之厚度至少為該至少兩個依序沉積之列印層的組合厚度。在一些實施例中,孔特徵中之一或更多者不與安置於其上方或其下方之相鄰層中的孔特徵重疊,且因此具有單個列印層之厚度。In some embodiments, individual well features 410 may have a height of about 600 μm or less, such as about 500 μm or less, about 400 μm or less, about 300 μm or less, about 200 μm or less, About 100 μm or less, about 50 μm or less, about 40 μm or less, about 30 μm or less, about 20 μm or less, or about 10 μm or less. The height of individual hole features 410 is typically a multiple of the thickness of each of the printed layers, eg, 1 or more. For example, the thickness of the hole features within the printed layer can be the same as the thickness of the continuous polymer phase of the polishing material disposed adjacent to it. Thus, if hole features disposed laterally within at least two sequentially deposited print layers are aligned in the Z direction or at least partially overlap, the thickness of the resulting hole feature is at least as thick as the at least two sequentially deposited print layers. The combined thickness of the layers. In some embodiments, one or more of the hole features does not overlap a hole feature in an adjacent layer disposed above or below it, and thus has the thickness of a single printed layer.
在一些實施例中,個別孔特徵410經形成而具有約600 μm或更小(如約500 μm或更小、約400 μm或更小、約300 μm或更小、約200 μm或更小、約100 μm或更小、約50 μm或更小、約40 μm或更小、約30 μm或更小、約20 μm或更小、或約10 μm或更小)及約5 μm或更多(如約10 μm或更多、約25 μm或更多、或約50 μm或更多)之直徑D(在X-Y平面中量測)。在一些實施例中,個別孔特徵410之平均直徑D在約50 μm與約600 μm之間。在一些實施例中,孔特徵410形成為相比較於其高度而在X-Y平面上相對淺,例如,在一些實施例中,個別孔特徵之直徑D為其高度的約2/3或更小,如約1/2或更小,或約1/3或更小。In some embodiments, individual well features 410 are formed to have a thickness of about 600 μm or less (eg, about 500 μm or less, about 400 μm or less, about 300 μm or less, about 200 μm or less, about 100 μm or less, about 50 μm or less, about 40 μm or less, about 30 μm or less, about 20 μm or less, or about 10 μm or less) and about 5 μm or more (eg, about 10 μm or more, about 25 μm or more, or about 50 μm or more) diameter D (measured in the X-Y plane). In some embodiments, the average diameter D of individual hole features 410 is between about 50 μm and about 600 μm. In some embodiments, the hole features 410 are formed relatively shallow in the X-Y plane compared to their height, for example, in some embodiments, the diameter D of an individual hole feature is about 2/3 or less of its height, Such as about 1/2 or less, or about 1/3 or less.
在此,複數個孔特徵410中之個別者在垂直方向上藉由形成於其間之聚合物材料412的一或更多個列印層間隔開。在一些實施例中,孔特徵410之間在垂直方向上的間距可為約100 μm或更小,諸如約40 μm或更小,諸如約10 μm或更小,或約10 μm至約40 μm。一旦自孔特徵410移除了用以形成孔特徵之犧牲材料,則孔特徵410便可形成大體上閉孔之結構。在一個實例中,孔特徵410之間在垂直方向上的間距可為約40 μm。可藉由在包括孔特徵410之列印層之間安置聚合物材料412之四個10 μm列印層而形成40 μm間距。在另一實例中,孔特徵410之間在垂直方向上的間距可為約10 μm。可藉由在包括孔特徵410之列印層之間安置聚合物材料412之四個2.5 μm列印層而形成10 μm間距。Here, individual ones of the plurality of hole features 410 are vertically spaced apart by one or more printed layers of
在其他實施例中,孔特徵410中之一或更多者或其部分不與與其相鄰之孔特徵410中的一或更多者間隔開,且因此一旦自孔特徵410移除了犧牲材料,便形成了更開孔之結構。一或更多個列印層之厚度可為約5 μm或更大,如約10 μm或更大、20 μm或更大、30 μm或更大、40 μm或更大,或50 μm或更大。個別孔特徵410可形成在對應的單個列印層內,且因此具有對應於列印層之厚度的高度,或可形成在兩個或更多個相鄰列印層內以提供對應於其累積厚度之孔高度。In other embodiments, one or more of the hole features 410, or portions thereof, are not spaced apart from one or more of the hole features 410 adjacent thereto, and thus once the sacrificial material is removed from the hole features 410 , forming a more porous structure. The one or more printed layers may have a thickness of about 5 μm or greater, such as about 10 μm or greater, 20 μm or greater, 30 μm or greater, 40 μm or greater, or 50 μm or greater big. Individual hole features 410 may be formed in a corresponding single printed layer, and thus have a height corresponding to the thickness of the printed layer, or may be formed in two or more adjacent printed layers to provide a height corresponding to the cumulative thickness thereof. Hole height for thickness.
拋光元件404係由聚合物材料412之連續聚合物相形成。聚合物材料412可具有相對低的儲能模數E'(即,軟襯墊材料)、相對高的儲能模數E'(即,硬襯墊材料)或在相對低與相對高的儲能模數之間的相對中等之儲能模數E'(即,中等襯墊材料)。在一些實例中,聚合物材料412可具有大體均質之材料組成物。在一些其他實例中,聚合物材料412可包括至少兩種預聚物組成物,且因此包括低、中等或高儲能模數E'材料之組合,在一或更多種材料性質方面彼此具有差異。在表1中概述在約30℃的溫度下低、中等或高儲能模數E'材料(E'30)之特徵化。
表1
第5A圖至第5F圖為各種拋光元件504a~504f形狀之示意性平面圖,可與第4圖中所述之拋光墊400的拋光元件404一起使用或替代於該等拋光元件404使用該等拋光元件504a~504f形狀。第5A圖至第5F圖中之每一者包括像素圖,該等像素圖具有表示拋光元件504a~504f之白色區域(白色像素中之區域)及表示基礎層406之黑色區域(黑色像素中之區域)。FIGS. 5A-5F are schematic plan views of various polishing
在第5A圖中,拋光元件500a包括複數個同心圓環。在第5B圖中,拋光元件500b包括同心圓環之複數個區段。在第5C圖中,拋光元件504c形成複數個螺旋(示出四個),該複數個螺旋自拋光墊500c之中心延伸至拋光墊500c之邊緣或接近於該邊緣。在第5D圖中,複數個不連續的拋光元件504d以螺旋圖案佈置在拋光墊500d之基礎層406上。In Figure 5A, polishing
在第5E圖中,複數個拋光元件504e中之每一者包括自基礎層406向上延伸之圓柱形柱。在其他實施例中,拋光元件504e為任何適當的橫剖面視圖形狀,例如,在通常平行於襯墊500e之底側表面切割的截面中具有環形、部分環形(例如,弧形)、橢圓形、正方形、矩形、三角形、多邊形、不規則形狀之行,或其組合。第5F圖圖示拋光墊500f,其具有自基礎層406向上延伸之複數個離散的拋光元件504f。第5F圖中之拋光墊500f類似於拋光墊500e,不同之處在於拋光元件504f中之一些相連接以形成一或更多個封閉圓圈。該一或更多個封閉圓圈會在CMP製程期間產生保留拋光流體之死角。
增材製造系統及製程實例
In FIG. 5E , each of plurality of polishing
第6A圖為根據一些實施例之可用以形成本文所述拋光墊的增材製造系統之示意性剖面視圖。在此,增材製造系統600之特徵在於可移動製造支撐件602、安置在製造支撐件602上方之複數個施配頭604及606、固化源608,及系統控制器610。在一些實施例中,施配頭604、606在拋光墊製造製程期間彼此獨立地且獨立於製造支撐件602移動。在此,第一施配頭604及第二施配頭606分別流體耦接至用以形成以上在第4圖中所示之聚合物材料412及孔特徵410的第一預聚物組成物612源及犧牲材料614源。通常,增材製造系統600之特徵在於至少一或更多個施配頭(例如,第三施配頭,未示出),其流體耦接至用以形成上述基礎層406之第二預聚物組成物源。在一些實施例中,增材製造系統600包括所期望之儘可能多的施配頭,以各自施配不同的預聚物組成物或犧牲材料前驅物組成物。在一些實施例中,增材製造系統600進一步包括複數個施配頭,其中兩個或更多個施配頭經配置以施配相同的預聚物組成物或犧牲材料前驅物組成物。Figure 6A is a schematic cross-sectional view of an additive manufacturing system that can be used to form the polishing pads described herein, according to some embodiments. Here,
在此,施配頭604、606中之每一者的特徵在於液滴噴射噴嘴616之陣列,其經配置以噴射已輸送至施配頭儲存器之相應的預聚物組成物612及犧牲材料組成物614之液滴630、632。在此,液滴630、632朝向製造支撐件噴射且因此噴射至製造支撐件602上或噴射至安置於製造支撐件602上之先前已形成的列印層618上。通常,施配頭604、606中之每一者經配置而獨立於其其他噴嘴616的發射以相應的幾何形狀陣列或圖案自噴嘴616中之每一者發射液滴630、632(控制其噴射)。本文中,當施配頭604、606相對於製造支撐件602移動時,根據待形成之列印層(如列印層624)的液滴施配圖案使噴嘴616獨立地發射。一旦經施配之後,預聚物組成物612之液滴630及/或犧牲材料組成物614之液滴632藉由暴露於由固化源608(例如,電磁輻射源,如UV輻射源)所提供之電磁輻射(例如,UV輻射626)而至少部分地固化,以形成列印層(如部分形成之列印層624)。Here, each of the dispense
在一些實施例中,預聚物組成物之已施配液滴(如預聚物組成物612之已施配液滴630)暴露於電磁輻射,以在液滴散佈至平衡尺寸(如在第6B圖之描述中所闡述)之前,物理地固定該液滴。通常,已施配液滴暴露於電磁輻射中,以在液滴接觸表面(如製造支撐件602的或安置於製造支撐件602上之先前已形成之列印層618的表面)的1秒或更短時間內,至少部分地固化其預聚物組成物。In some embodiments, dispensed droplets of the prepolymer composition (such as the dispensed
第6B圖為根據一些實施例之示意性地圖示安置在先前已形成的層(如第6A圖中所述之先前已形成的層618)之表面618a上的液滴630之特寫橫剖面視圖。在典型的增材製造製程中,預聚物組成物之液滴(如液滴630a)在液滴630a接觸表面618a的那一刻起約一秒內散佈開並達到與先前已形成的層之表面618a的平衡接觸角度α。平衡接觸角α係至少預聚物組成物之材料性質及先前已形成的層(例如,先前已形成的層618)之表面618a處的能量(表面能量)之函數。在一些實施例中,為了固定與先前已形成的層之表面618a的液滴接觸角度,期望在已施配的液滴達到平衡尺寸之前至少部分地固化該已施配的液滴。在彼些實施例中,固定液滴630b之接觸角度θ大於允許散佈至其平衡尺寸之相同預聚物組成物的液滴630a之平衡接觸角度α。Figure 6B is a close-up cross-sectional view schematically illustrating a
本文中,至少部分地固化已施配液滴會導致至少部分聚合,例如,液滴內之(數個)預聚物組成物的交聯及與相鄰安置之相同或不同預聚物組成物的液滴之交聯,以形成連續聚合物相。在一些實施例中,在將犧牲材料組成物施配至所需孔中之前,施配並至少部分地固化預聚物組成物以在所需孔周圍形成阱。 配方及材料實例 Herein, at least partial curing of the dispensed droplets results in at least partial polymerization, e.g., cross-linking of the prepolymer composition(s) within the droplet and the same or different prepolymer compositions disposed adjacently The cross-linking of the droplets to form a continuous polymer phase. In some embodiments, prior to dispensing the sacrificial material composition into the desired well, a prepolymer composition is dispensed and at least partially cured to form a well around the desired well. Formulation and Material Examples
用以形成上述拋光元件之基礎層406及聚合物材料412的預聚物組成物各自包括官能性聚合物、官能性寡聚物、官能性單體、反應性稀釋劑及光引發劑中之一或更多者的混合物。The prepolymer compositions used to form the
可用以形成至少兩種預聚物組成物中之一者或兩者的適當官能性聚合物之實例包括多官能丙烯酸酯,包括二、三、四及更高官能度之丙烯酸酯,如1,3,5-三丙烯醯基六氫-1,3,5-三嗪或三羥甲基丙烷三丙烯酸酯。Examples of suitable functional polymers that can be used to form one or both of the at least two prepolymer compositions include multifunctional acrylates, including di-, tri-, tetra-, and higher-functionality acrylates, such as 1, 3,5-Triacryloylhexahydro-1,3,5-triazine or trimethylolpropane triacrylate.
可用以形成至少兩種預聚物組成物中之一者或兩者的適當官能性寡聚物之實例包括單官能及多官能寡聚物、丙烯酸酯寡聚物,如脂族胺基甲酸酯丙烯酸酯寡聚物、脂族六官能胺基甲酸酯丙烯酸酯寡聚物、二丙烯酸酯、脂族六官能丙烯酸酯寡聚物、多官能胺基甲酸酯丙烯酸酯寡聚物、脂族胺基甲酸酯二丙烯酸酯寡聚物、脂族胺基甲酸酯丙烯酸酯寡聚物、脂族聚酯胺基甲酸酯二丙烯酸酯共混物及與脂族二丙烯酸酯寡聚物,或其組合,例如,雙酚-A乙氧基化物二丙烯酸酯或聚丁二烯二丙烯酸酯、四官能丙烯酸酯化的聚酯寡聚物、脂族聚酯基胺基甲酸酯二丙烯酸酯寡聚物,及脂族聚酯基丙烯酸酯及二丙烯酸酯。Examples of suitable functional oligomers that can be used to form either or both of the at least two prepolymer compositions include monofunctional and polyfunctional oligomers, acrylate oligomers, such as aliphatic urethane ester acrylate oligomer, aliphatic hexafunctional urethane acrylate oligomer, diacrylate, aliphatic hexafunctional urethane acrylate oligomer, multifunctional urethane acrylate oligomer, ester Urethane diacrylate oligomers, aliphatic urethane acrylate oligomers, aliphatic polyester urethane diacrylate blends and aliphatic diacrylate oligomers compounds, or combinations thereof, such as bisphenol-A ethoxylate diacrylate or polybutadiene diacrylate, tetrafunctional acrylated polyester oligomers, aliphatic polyester-based urethanes Diacrylate oligomers, and aliphatic polyester-based acrylates and diacrylates.
可用以形成至少兩種預聚物組成物中之一者或兩者的適當單體之實例包括單官能單體及多官能單體。適當的單官能單體包括丙烯酸四氫糠酯(例如,Sartomer ®的SR285)、甲基丙烯酸四氫糠酯、乙烯基己內醯胺、丙烯酸異冰片酯、甲基丙烯酸異冰片酯、丙烯酸2-苯氧基乙酯、甲基丙烯酸2-苯氧基乙酯、丙烯酸2-(2-乙氧基乙氧基)乙酯、丙烯酸異辛酯、丙烯酸異癸酯、甲基丙烯酸異癸酯、丙烯酸月桂酯、甲基丙烯酸月桂酯、丙烯酸硬脂基酯、甲基丙烯酸硬脂基酯、環狀三羥甲基丙烷縮甲醛丙烯酸酯、2-[[(丁基胺基)羰基]氧基]丙烯酸乙酯(例如,來自RAHN USA公司的Genomer 1122)、3,3,5-三甲基環己烷丙烯酸酯或單官能甲氧基化PEG(350)丙烯酸酯。適當的多官能單體包括二醇及聚醚二醇的二丙烯酸酯或二甲基丙烯酸酯,如丙氧基化新戊二醇二丙烯酸酯、1,6-己二醇二丙烯酸酯、1,6-己二醇二甲基丙烯酸酯、1,3-丁二醇二丙烯酸酯、1,3-丁二醇二甲基丙烯酸酯、1,4-丁二醇二丙烯酸酯、1,4-丁二醇二甲基丙烯酸酯、烷氧基化脂族二丙烯酸酯(例如,Sartomer ®的SR9209A)、二乙二醇二丙烯酸酯、二乙二醇二甲基丙烯酸酯、二丙二醇二丙烯酸酯、三丙二醇二丙烯酸酯、三乙二醇二甲基丙烯酸酯、烷氧基化己二醇二丙烯酸酯或其組合,例如,得自Sartomer ®之SR562、SR563、SR564。 Examples of suitable monomers that may be used to form one or both of the at least two prepolymer compositions include monofunctional monomers and polyfunctional monomers. Suitable monofunctional monomers include tetrahydrofurfuryl acrylate (eg, SR285 from Sartomer®), tetrahydrofurfuryl methacrylate, vinyl caprolactam, isobornyl acrylate, isobornyl methacrylate, 2 -Phenoxyethyl ester, 2-phenoxyethyl methacrylate, 2-(2-ethoxyethoxy)ethyl acrylate, isooctyl acrylate, isodecyl acrylate, isodecyl methacrylate , lauryl acrylate, lauryl methacrylate, stearyl acrylate, stearyl methacrylate, cyclic trimethylolpropane formal acrylate, 2-[[(butylamino)carbonyl]oxy ] ethyl acrylate (eg Genomer 1122 from RAHN USA), 3,3,5-trimethylcyclohexane acrylate or monofunctional methoxylated PEG (350) acrylate. Suitable polyfunctional monomers include diols and diacrylates or dimethacrylates of polyether diols, such as propoxylated neopentyl glycol diacrylate, 1,6-hexanediol diacrylate, 1 ,6-hexanediol dimethacrylate, 1,3-butanediol diacrylate, 1,3-butanediol dimethacrylate, 1,4-butanediol diacrylate, 1,4 -Butanediol dimethacrylate, alkoxylated aliphatic diacrylates (eg, SR9209A from Sartomer®), diethylene glycol diacrylate, diethylene glycol dimethacrylate, dipropylene glycol diacrylate ester, tripropylene glycol diacrylate, triethylene glycol dimethacrylate, alkoxylated hexanediol diacrylate or combinations thereof, for example, SR562 , SR563, SR564 from Sartomer®.
通常,用以形成預聚物組成物中之一或更多者的反應性稀釋劑係最低單官能的,且在暴露於自由基、路易斯酸及/或電磁輻射時會發生聚合。適當的反應性稀釋劑之實例包括單丙烯酸酯、丙烯酸2-乙基己酯、丙烯酸辛基癸基酯、環狀丙烯酸三羥甲基丙烷縮甲醛酯、丙烯酸己內酯、丙烯酸異冰片酯(IBOA)或烷氧基化的甲基丙烯酸月桂酯。Typically, the reactive diluent used to form one or more of the prepolymer compositions is minimally monofunctional and polymerizes upon exposure to free radicals, Lewis acids, and/or electromagnetic radiation. Examples of suitable reactive diluents include monoacrylate, 2-ethylhexyl acrylate, octyldecyl acrylate, cyclic trimethylolpropane formal acrylate, caprolactone acrylate, isobornyl acrylate ( IBOA) or alkoxylated lauryl methacrylate.
用以形成至少兩種不同預聚物組成物中之一或更多者的適當光引發劑之實例包括聚合光引發劑及/或寡聚物光引發劑,如苯偶姻醚、芐基縮酮、乙醯苯酮、烷基苯酮、氧化膦、二苯甲酮化合物及噻噸酮化合物(其包括胺增效劑),或其組合。Examples of suitable photoinitiators for forming one or more of at least two different prepolymer compositions include polymeric photoinitiators and/or oligomeric photoinitiators, such as benzoin ethers, benzyl Ketones, acetophenones, alkylphenones, phosphine oxides, benzophenone compounds, and thioxanthone compounds (which include amine synergists), or combinations thereof.
由上述預聚物組成物形成之拋光墊材料的實例通常包括寡聚物及/或聚合物鏈段、化合物或選自由如下各者組成之群組的材料:聚醯胺、聚碳酸酯、聚酯、聚醚酮、聚醚、聚甲醛、聚醚砜、聚醚醯亞胺、聚醯亞胺、聚烯烴、聚矽氧烷、聚砜、聚伸苯、聚苯硫醚、胺基甲酸酯、聚苯乙烯、聚丙烯腈、聚丙烯酸酯、聚甲基丙烯酸甲酯、胺基甲酸酯丙烯酸酯、聚丙烯酸丙烯酸酯、環氧丙烯酸酯、聚碳酸酯、聚酯、三聚氰胺、聚砜、聚乙烯材料、丙烯腈丁二烯苯乙烯(ABS)、鹵化物聚合物、嵌段共聚物及無規共聚物,及其組合。Examples of polishing pad materials formed from the above prepolymer compositions generally include oligomers and/or polymer segments, compounds, or materials selected from the group consisting of polyamide, polycarbonate, polyamide Ester, polyetherketone, polyether, polyoxymethylene, polyethersulfone, polyetherimide, polyimide, polyolefin, polysiloxane, polysulfone, polyphenylene, polyphenylene sulfide, aminomethyl ester, polystyrene, polyacrylonitrile, polyacrylate, polymethylmethacrylate, urethane acrylate, polyacrylate acrylate, epoxy acrylate, polycarbonate, polyester, melamine, poly Sulfone, polyethylene materials, acrylonitrile butadiene styrene (ABS), halide polymers, block and random copolymers, and combinations thereof.
可用以形成上述孔特徵410之(數個)犧牲材料組成物包括水溶性材料,如二醇(例如,聚乙二醇)、二醇醚及胺。可用以形成本文所述成孔特徵之適當犧牲材料前驅物之實例包括乙二醇、丁二醇、二聚二醇、丙二醇-(1,2)及丙二醇-(1,3)、辛烷-1,8-二醇、新戊二醇、環己烷二甲醇(1,4-雙-羥甲基環己烷)、2-甲基-1,3-丙二醇、甘油、三羥甲基丙烷、己二醇-(1,6)、己三醇-(1,2,6)丁烷三醇-(1,2,4)、三羥甲基乙烷、季戊四醇、奎尼醇(quinitol)、甘露醇及山梨醇、甲基醣苷,以及二乙二醇、三乙二醇、四乙二醇、聚乙二醇、二丁二醇。聚丁二醇、乙二醇、乙二醇單丁醚(EGMBE)、二乙二醇單乙醚、乙醇胺、二乙醇胺(DEA)、三乙醇胺(TEA),及其組合。Sacrificial material composition(s) that may be used to form the pore features 410 described above include water soluble materials such as glycols (eg, polyethylene glycol), glycol ethers, and amines. Examples of suitable sacrificial material precursors that can be used to form the pore-forming features described herein include ethylene glycol, butylene glycol, dimer glycol, propylene glycol-(1,2) and propylene glycol-(1,3), octane- 1,8-diol, neopentyl glycol, cyclohexanedimethanol (1,4-bis-methylolcyclohexane), 2-methyl-1,3-propanediol, glycerin, trimethylolpropane , hexanediol-(1,6), hexanetriol-(1,2,6) butanetriol-(1,2,4), trimethylolethane, pentaerythritol, quinitol , mannitol and sorbitol, methyl glucoside, and diethylene glycol, triethylene glycol, tetraethylene glycol, polyethylene glycol, dibutylene glycol. Polytetramethylene glycol, ethylene glycol, ethylene glycol monobutyl ether (EGMBE), diethylene glycol monoethyl ether, ethanolamine, diethanolamine (DEA), triethanolamine (TEA), and combinations thereof.
在一些實施例中,犧牲材料前驅物包括水溶性聚合物,如1-乙烯基-2-吡咯啶酮、乙烯基咪唑、聚乙二醇二丙烯酸酯、丙烯酸、苯乙烯磺酸鈉、Hitenol BC10®、Maxemul 6106 ®、丙烯酸羥乙酯及[2-(甲基丙烯醯氧基)乙基三甲基氯化銨、3-烯丙氧基-2-羥基-1-丙烷磺酸鈉、4-乙烯基苯磺酸鈉、[2-(甲基丙烯醯氧基)乙基]二甲基-(3-磺丙基)氫氧化銨、2-丙烯醯胺基-2-甲基-1-丙烷磺酸、乙烯基膦酸、烯丙基三苯基氯化物、(乙烯基芐基)三甲基氯化銨、烯丙基三苯基氯化物、(乙烯基芐基)三甲基氯化銨、E-SPERSE RS-1618、E-SPERSE RS-1596、甲氧基聚乙二醇單丙烯酸酯、甲氧基聚乙二醇二丙烯酸酯、甲氧基聚乙二醇三丙烯酸酯,或其組合。 例示性預聚物組成物-多官能丙烯酸酯組分 In some embodiments, sacrificial material precursors include water-soluble polymers such as 1-vinyl-2-pyrrolidone, vinylimidazole, polyethylene glycol diacrylate, acrylic acid, sodium styrene sulfonate, Hitenol BC10 ®, Maxemul 6106 ® , hydroxyethyl acrylate and [2-(methacryloxy)ethyltrimethylammonium chloride, sodium 3-allyloxy-2-hydroxy-1-propanesulfonate, 4 -Sodium vinylbenzenesulfonate, [2-(methacryloxy)ethyl]dimethyl-(3-sulfopropyl)ammonium hydroxide, 2-acrylamido-2-methyl-1 - Propane Sulfonic Acid, Vinyl Phosphonic Acid, Allyl Triphenyl Chloride, (Vinylbenzyl) Trimethyl Ammonium Chloride, Allyl Triphenyl Chloride, (Vinylbenzyl) Trimethyl Ammonium Chloride Ammonium Chloride, E-SPERSE RS-1618, E-SPERSE RS-1596, Methoxypolyethylene Glycol Monoacrylate, Methoxypolyethylene Glycol Diacrylate, Methoxypolyethylene Glycol Triacrylate , or a combination thereof. Exemplary Prepolymer Composition - Multifunctional Acrylate Component
在一些實例中,預聚物組成物612包括多官能丙烯酸酯組分,如三丙二醇二丙烯酸酯、聚(丙二醇)二丙烯酸酯(例如,具有在約350 g/mol至約2000 g/mol之範圍內的分子量)、三羥甲基三丙烯酸酯、新戊二醇二丙烯酸酯、乙氧基化新戊二醇二丙烯酸酯、季戊四醇三丙烯酸酯、季戊四醇四丙烯酸酯或其組合。在一些實例中,多官能丙烯酸酯組分可包括至少一種二丙烯酸酯或三丙烯酸酯,其具有約200 g/mol或更大、約350 g/mol或更大或約600 g/mol或更大(如約350 g/mol至約2000 g/mol)之分子量。在一些實例中,預聚物組成物612中多官能丙烯酸酯組分的濃度可為約20 wt%或更少,如約10 wt%或更少,或約10 wt%至約20 wt%。在一些實例中,預聚物組成物612進一步包括丙烯酸苯氧乙酯、丙烯酸四氫糠酯、丙烯酸丁基胺基甲酸乙酯、丙烯酸異冰片酯或其組合中之至少一者。In some examples,
在一些實例中,包括多官能丙烯酸酯組分之預聚物組成物612的已施配液滴630在暴露於第一劑量之電磁輻射時的固化速率大於不具有多官能丙烯酸酯組分之預聚物組成物612在暴露於相同第一劑量之電磁輻射時的固化速率。在一些實例中,當固化時,預聚物組成物612可形成具有小於100、小於90、小於80、小於70、小於60、小於50、小於40、小於30、小於20或小於10、或0至約20、約20至約40、約40至約60、約60至約80或約80至約100之肖氏A硬度的聚合物。In some examples, dispensed
在一些實例中,預聚物組成物612之已施配液滴630的至少部分固化包括將已施配液滴630暴露於電磁輻射歷時約2秒至約4秒之第一時間週期,且具有多官能丙烯酸酯組分之預聚物組成物612之固化速率對應於在第一時間週期期間多官能丙烯酸酯組分之約50%至約70%的轉化率。In some examples, at least partial curing of the dispensed
在一些實例中,複數個孔特徵410中之個別者的孔特徵空間之體積為經施配以形成對應孔特徵410的犧牲材料組成物614之體積的至少50%、至少60%、至少70%、至少80%、或至少90%、或約50%至約60%、約60%至約70%、約70%至約80%、約80%至約90%、或約90%至約100%。In some examples, the volume of the hole feature space of an individual of the plurality of hole features 410 is at least 50%, at least 60%, at least 70% of the volume of the
在一些實例中,當與不具有多官能丙烯酸酯組分之預聚物組成物612的固化速率相比較時,具有多官能丙烯酸酯組分之預聚物組成物612的固化速率減少了預聚物組成物612及犧牲材料組成物614的相鄰液滴630、632之間的相互混合。In some examples, when compared to the cure rate of
在一些實例中,具有多官能丙烯酸酯組分之預聚物組成物612的固化速率滿足針對預聚物組成物612及犧牲材料組成物614的相鄰液滴630、632之間的相互混合之臨限值條件。在一些實例中,相互混合之臨限值條件對應於複數個孔特徵410中之個別者的孔特徵空間之體積,該體積為經施配以形成對應孔特徵410的犧牲材料組成物614之體積的至少50%、至少60%、至少70%、至少80%、或至少90%、或約50%至約60%、約60%至約70%、約70%至約80%、約80%至約90%、或約90%至約100%。In some examples, the cure rate of the
在一些實例中,當具有多官能丙烯酸酯組分之預聚物組成物612的固化速率符合或超出臨限固化速率時,複數個孔特徵中之至少5%、至少10%、至少20%、至少30%、至少40%或至少50%與拋光層內之複數個孔特徵中的其他者隔離。In some examples, at least 5%, at least 10%, at least 20%, at least 20%, At least 30%, at least 40%, or at least 50% are isolated from others of the plurality of hole features within the polishing layer.
在一些實例中,當與使用不具有多官能丙烯酸酯組分之預聚物組成物612形成的拋光墊相比較時,當暴露於水性拋光流體時,多官能丙烯酸酯組分減少了拋光墊400之溶脹。In some examples, the multifunctional acrylate component reduces polishing
在一些實例中,與使用不具有多官能丙烯酸酯組分之預聚物組成物612形成的拋光層相比較而言,多官能丙烯酸酯組分增大了安置在拋光層上之水滴的表面接觸角度。
例示性預聚物組成物-表面活性劑
In some examples, the multifunctional acrylate component increases the surface contact of water droplets disposed on the polishing layer as compared to a polishing layer formed using
在一些實例中,預聚物組成物612包括表面活性劑,如聚丁基苯酚、壬基苯酚、2-甲基-4-三辛基苯酚、4,6-二第三丁基-2-甲基苯酚或其組合。在一些實例中,預聚物組成物612中之表面活性劑的濃度可為約1 wt%或更少,如約0.1 wt%或更少,或約0.1 wt%至約1 wt%。In some examples, the
在一些實例中,表面活性劑增大了預聚物組成物612之已施配液滴630的疏水性。在一些實例中,複數個孔特徵410中之個別者的孔特徵空間之體積為經施配以形成對應孔特徵410的犧牲材料組成物614之體積的至少50%、至少60%、至少70%、至少80%、或至少90%、或約50%至約60%、約60%至約70%、約70%至約80%、約80%至約90%、或約90%至約100%。
例示性犧牲材料組成物-聚乙二醇單丙烯酸酯組分
In some examples, the surfactant increases the hydrophobicity of the dispensed
在一些實例中,犧牲材料組成物614包括聚乙二醇單丙烯酸酯組分。犧牲材料組成物614中之聚乙二醇單丙烯酸酯組分的濃度可為約30 wt%或更大、約40 wt%或更大、或約50 wt%或更大。在一些實例中,聚乙二醇單丙烯酸酯組分之分子量可為約400 g/mol至約1200 g/mol,如約400 g/mol至約750 g/mol。In some examples,
在一些實例中,犧牲材料組成物614可進一步包括聚乙二醇二丙烯酸酯組分、聚乙二醇組分或其組合。在一些實例中,犧牲材料組成物中之聚乙二醇二丙烯酸酯組分的濃度可為約30 wt%或更小、約20 wt%或更小、或約10 wt%或更小。在一些實例中,犧牲材料組成物中之聚乙二醇組分的濃度可為約40 wt%或更小、約30 wt%或更小、或約20 wt%或更小。在一個實例中,犧牲材料組成物中之聚乙二醇單丙烯酸酯組分的濃度可為約30 wt%或更大,犧牲材料組成物中之聚乙二醇二丙烯酸酯組分的濃度可為約10 wt%或更小,且犧牲材料組成物中之聚乙二醇組分的濃度可為約40 wt%或更小。在一些實例中,當固化時,犧牲材料組成物614可形成在室溫下具有大於1、大於5或大於10(如自10至100)之肖氏A硬度的聚合物。In some examples, the
在一些實例中,聚合物為水溶性的且將聚合物暴露於水性溶液中會在拋光層中形成複數個孔。在一些實例中,犧牲材料組成物614在固化時會形成線性聚合物基質。在一些實例中,預聚物組成物612可包括丙烯酸苯氧乙酯、丙烯酸四氫糠酯、丙烯酸丁基胺基甲酸乙酯、丙烯酸異冰片酯或其組合中之至少一者。In some examples, the polymer is water soluble and exposing the polymer to an aqueous solution forms pores in the polishing layer. In some examples,
在一些實例中,複數個孔特徵410中之個別者的孔特徵空間之體積為經施配以形成對應孔特徵410的犧牲材料組成物614(包括聚乙二醇單丙烯酸酯組分)之體積的至少50%、至少60%、至少70%、至少80%、或至少90%、或約50%至約60%、約60%至約70%、約70%至約80%、約80%至約90%、或約90%至約100%。In some examples, the volume of the hole feature space of individual ones of the plurality of hole features 410 is the volume of the sacrificial material composition 614 (including the polyethylene glycol monoacrylate component) dispensed to form the corresponding hole features 410 At least 50%, at least 60%, at least 70%, at least 80%, or at least 90%, or about 50% to about 60%, about 60% to about 70%, about 70% to about 80%, about 80% of to about 90%, or about 90% to about 100%.
在此,第6A圖中所示之增材製造系統600進一步包括系統控制器610以指導其操作。系統控制器610包括可程式化中央處理單元(central processing unit; CPU)634,其可與記憶體635(例如,非揮發性記憶體)及支援電路636一起操作。支援電路636習知地耦接至CPU 634,且包括耦接至增材製造系統600的各種部件之快取記憶體、時鐘電路、輸入/輸出子系統、電源供應器及其類似者及其組合,以促進對增材製造系統600的控制。CPU 634為在工業環境中使用之任何形式的通用電腦處理器中的一者(如可程式化邏輯控制器(programmable logic controller; PLC)),用於控制增材製造系統600之各種部件及子處理器。耦接至CPU 634之記憶體635為非暫時性的且通常為易購記憶體中之一或更多者,如隨機存取記憶體(random access memory; RAM)、唯讀記憶體(read only memory; ROM)、軟碟驅動器、硬碟,或任何其他形式之數位儲存器,為本端的或遠端的。Here, the
通常,記憶體635呈含有指令之電腦可讀儲存媒體的形式(例如,非揮發性記憶體),該等指令在由CPU 634執行時會促進製造系統600之操作。記憶體635中之指令呈程式產品之形式,如實施本揭示案之方法的程式。Typically,
程式碼可符合諸多不同程式化語言中之任一者。在一個實例中,本揭示案可被實施為儲存在電腦可讀儲存媒體上以與電腦系統一起使用之程式產品。程式產品之(數個)程式定義了實施例之功能(包括本文所述方法)。The code may conform to any of a number of different programming languages. In one example, the present disclosure can be implemented as a program product stored on a computer readable storage medium for use with a computer system. The program(s) of the program product define functions of the embodiments (including the methods described herein).
說明性的電腦可讀儲存媒體包括但不限於:(i)永久地儲存資訊之不可寫儲存媒體(例如,電腦內之唯讀記憶體元件,如可由CD-ROM驅動器讀取之CD-ROM磁碟、快閃記憶體、ROM晶片,或任何類型之固態非揮發性半導體記憶體);及(ii)儲存可變更資訊之可寫儲存媒體(例如,軟碟驅動器內之軟碟或硬碟驅動器,或任何類型之固態隨機存取半導體記憶體)。當攜載指導本文所述方法之功能的電腦可讀指令時,此種電腦可讀儲存媒體為本揭示案之實施例。在一些實施例中,本文所述方法或部分係由一或更多個特殊應用積體電路(application specific integrated circuit; ASIC)、場可程式化閘極陣列(field-programmable gate array; FPGA)或其他類型之硬體實施來執行。在一些其他實施例中,本文所述之拋光墊製造系統係由軟件常用程式、(數個)ASIC、FPGA及/或其他類型的硬體實施之組合來執行。Illustrative computer-readable storage media include, but are not limited to: (i) non-writable storage media that permanently store information (for example, read-only disk, flash memory, ROM chip, or any type of solid-state non-volatile semiconductor memory); and (ii) a writable storage medium that stores changeable information (for example, a floppy disk within a floppy disk drive or a hard disk drive , or any type of solid state random access semiconductor memory). Such a computer-readable storage medium, when carrying computer-readable instructions that direct the function of the methods described herein, is an embodiment of the disclosure. In some embodiments, the methods or portions described herein are implemented by one or more application specific integrated circuits (ASICs), field-programmable gate arrays (FPGAs), or Other types of hardware implementations to perform. In some other embodiments, the polishing pad manufacturing systems described herein are implemented by a combination of software routines, ASIC(s), FPGA, and/or other types of hardware implementations.
在此,系統控制器610指導製造支撐件602的運動、施配頭604及606的運動、噴嘴616之用以從中噴射出預聚物組成物之液滴的發射,及由UV輻射源608提供之已施配液滴的固化之程度及定時。在一些實施例中,系統控制器用以指導製造系統600的操作之指令包括待形成之列印層中之每一者的液滴施配圖案。在一些實施例中,液滴施配圖案作為CAD相容之數位列印指令被共同地儲存在記憶體635中。Here, the
第7圖為根據本文所述實施例之闡述形成拋光墊之列印層的方法之流程圖。可結合本文所述之系統及系統操作中的一或更多者(如第6A圖之增材製造系統600及第6B圖之固定液滴)來使用方法700之實施例。另外,方法700之實施例可用以形成本文所示出及描述之拋光墊的實施例中之任一者或組合。7 is a flowchart illustrating a method of forming a printing layer of a polishing pad according to embodiments described herein. Embodiments of the
在活動710處,方法700包括根據預定的液滴施配圖案將預聚物組成物之液滴及犧牲材料組成物之液滴施配至先前已形成的列印層之表面上。At
在活動720處,方法700包括至少部分地固化預聚物組成物之已施配液滴以形成包括複數個孔特徵之列印層。At
在一些實施例中,方法700進一步包括活動710及720之依序重複,以形成在Z方向上(即,正交於製造支撐件之表面或安置於其上之先前已形成的列印層之方向)堆疊之複數個列印層。用以形成每一列印層之預定液滴施配圖案可與用以形成安置於其下方之先前列印層的預定液滴施配圖案相同或不同。在一些實施例中,複數個列印層包括拋光層,該拋光層中形成有複數個孔特徵。在一些實施例中,複數個列印層包括拋光層,該拋光層中形成有複數個成孔特徵,其中該複數個成孔特徵包括犧牲材料組成物。In some embodiments,
理想地,當與習知預聚物組成物相比較時,本文所述之包括多官能丙烯酸酯組分的預聚物組成物實施例提供加速的固化,如第8圖中所示之轉化率-暴露曲線所圖示。Ideally, the prepolymer composition embodiments described herein that include a multifunctional acrylate component provide accelerated cure when compared to conventional prepolymer compositions, as shown in Figure 8 for conversion - Exposure curves are shown graphically.
第8圖為曲線圖800,其圖示不具有多官能丙烯酸酯組分之預聚物組成物的轉化率-暴露曲線802a~802b,及具有濃度為約10 wt%之多官能丙烯酸酯組分的對應預聚物組成物之轉化率-暴露曲線804a~804b。在第8圖中所圖示之實例中,可(例如)根據方法700來施配及固化預聚物組成物及犧牲材料組成物之液滴。在此實例中,犧牲材料組成物可形成已施配液滴之總體積的約16%。Figure 8 is a
在第8圖之實例中,已施配液滴暴露於一系列電磁輻射脈衝(例如,UV輻射)之脈衝,其中每一脈衝具有固定能量(劑量)。因此,暴露時間(x軸)對應於施加至已施配液滴之電磁輻射的累積劑量,且將多官能丙烯酸酯組分的轉化率(y軸)作為累積劑量之函數進行量測。在此實例中,轉化率可指示藉由光差示掃描量熱法(differential scanning calorimetry; DSC)量測之UV可固化組成物的化學交聯程度。In the example of Figure 8, the dispensed droplets are exposed to a series of pulses of electromagnetic radiation pulses (eg, UV radiation), each pulse having a fixed energy (dose). Thus, the exposure time (x-axis) corresponds to the cumulative dose of electromagnetic radiation applied to the dispensed droplets, and the conversion of the multifunctional acrylate component (y-axis) is measured as a function of the cumulative dose. In this example, conversion can indicate the degree of chemical crosslinking of the UV curable composition as measured by optical differential scanning calorimetry (DSC).
如第8圖中所示,當與不具有多官能丙烯酸酯組分之預聚物組成物的對應轉化率-暴露曲線802a~802b相比較時,具有多官能丙烯酸酯組分之預聚物組成物的轉化率-暴露曲線有益地朝向在相同暴露時間(累積劑量)下轉化率增加之方向偏移。在一些實例中,初始固化速率(其對應於轉化率-暴露曲線之初始斜率)增大約2倍或更多、或約1倍至約2倍,如約1.6倍至約1.95倍。在一個實例中,具有多官能丙烯酸酯組分之預聚物組成物的固化速率與不具有多官能丙烯酸酯組分之預聚物組成物的固化速率之比率可為約1.6或更大,如約1.6至約1.95。As shown in Figure 8, when compared to the corresponding conversion-exposure curves 802a-802b for prepolymer compositions without the multifunctional acrylate component, the prepolymer composition with the multifunctional acrylate component The conversion-exposure curves of the compounds are beneficially shifted towards increasing conversion at the same exposure time (cumulative dose). In some examples, the initial cure rate (which corresponds to the initial slope of the conversion-exposure curve) is increased by a factor of about 2 or more, or from about 1 to about 2, such as from about 1.6 to about 1.95. In one example, the ratio of the cure rate of the prepolymer composition with the multifunctional acrylate component to the cure rate of the prepolymer composition without the multifunctional acrylate component can be about 1.6 or greater, as About 1.6 to about 1.95.
表2示出使用第8圖之預聚物組成物形成的拋光墊之硬度及孔特徵空間%(即,複數個孔特徵中之個別者的孔特徵空間之體積作為經施配以形成對應孔特徵之犧牲材料組成物之體積的分數)值。
表2
儘管前文針對本揭示案之實施例,但可在不脫離本揭示案之基本範疇的情況下設計本揭示案之其他及另外實施例,且本揭示案之範疇由以下申請專利範圍確定。While the foregoing is directed to embodiments of the disclosure, other and further embodiments of the disclosure can be devised without departing from the basic scope of the disclosure, and the scope of the disclosure is determined by the claims below.
112:犧牲材料組成物 202:拋光層 204:拋光材料 206:孔特徵 208:拋光表面 300:拋光系統 304:平臺 306:基板載體 308:基板 310:載體軸線 312:平臺軸線 314:流體輸送臂 316:襯墊調節器組件 318:調節盤 320:調節器軸線 400:拋光墊 401:拋光表面 404:拋光元件 405:柱 406:基礎層 407:同心環 410:孔特徵 412:聚合物材料 418:通道 600:增材製造系統 602:製造支撐件 604:施配頭 606:施配頭 608:固化源 610:系統控制器 612:預聚物組成物 614:犧牲材料組成物 616:噴嘴 618:列印層 624:列印層 626:UV輻射 630:液滴 632:液滴 634:中央處理單元 635:記憶體 636:支援電路 700:方法 710:活動 720:活動 800:曲線圖 102a:拋光層 102b:拋光層 104a:拋光材料 104b:拋光材料 106a:孔特徵 106b:孔特徵 108a:拋光表面 108b:拋光表面 110a:列印層 110c:列印層 110g:列印層 500a:拋光元件 500b:拋光元件 500c:拋光墊 500d:拋光墊 500e:拋光墊 500f:拋光墊 504c:拋光元件 504d:不連續拋光元件 504e:拋光元件 504f:拋光元件 618a:表面 630a:液滴 110a-k:列印層 504a-f:拋光元件 112: Sacrificial material composition 202: polishing layer 204: polishing material 206: Hole feature 208: polished surface 300: Polishing system 304: platform 306: substrate carrier 308: Substrate 310: carrier axis 312: Platform axis 314: Fluid transfer arm 316: Pad Adjuster Assembly 318: Adjustment disc 320: Regulator axis 400: polishing pad 401: polished surface 404: polishing element 405: column 406: base layer 407: concentric ring 410: Hole Features 412: polymer material 418: channel 600: Additive Manufacturing Systems 602: Manufacturing supports 604: dispensing head 606: dispensing head 608: Curing source 610: System Controller 612: Prepolymer composition 614: Sacrificial material composition 616: Nozzle 618:Print layer 624:Print layer 626:UV radiation 630: droplet 632: droplet 634: central processing unit 635: memory 636: support circuit 700: method 710: activity 720: Activity 800: Curve 102a: polishing layer 102b: polishing layer 104a: Polishing material 104b: Polishing material 106a: Hole Features 106b: Hole feature 108a: polished surface 108b: polished surface 110a: printing layer 110c: printing layer 110g: printing layer 500a: polishing element 500b: Polishing element 500c: polishing pad 500d: polishing pad 500e: polishing pad 500f: polishing pad 504c: Polishing elements 504d: Discontinuous polishing elements 504e: Polishing elements 504f: polishing element 618a: Surface 630a: Droplet 110a-k: printing layer 504a-f: Polishing elements
因此,可詳細地理解本揭示案之上述特徵的方式,可藉由參考實施例來獲得以上簡要概述的本揭示案之更特定描述,一些實施例在附加圖式中圖示。然而,應注意,附加圖式僅圖示本揭示案之典型實施例,且因此不應將其視為對本揭示案之範疇的限制,因為本揭示案可允許其他同等有效的實施例。So that the manner in which the above recited features of the disclosure can be understood in detail, a more particular description of the disclosure, briefly summarized above, can be had by reference to embodiments, some of which are illustrated in the accompanying drawings. It is to be noted, however, that the appended drawings illustrate only typical embodiments of the disclosure and are therefore not to be considered limiting of its scope, for the disclosure may admit to other equally effective embodiments.
第1A圖為圖示例示性拋光墊之拋光層的一部分之示意性剖面視圖。FIG. 1A is a schematic cross-sectional view of a portion of a polishing layer of an illustrative polishing pad.
第1B圖為圖示拋光墊(例如,第1A圖之拋光墊)之待列印拋光層的設計佈局之示意性剖面視圖。FIG. 1B is a schematic cross-sectional view illustrating a design layout of a polishing layer of a polishing pad (eg, the polishing pad of FIG. 1A ) to be printed.
第2圖為圖示根據本文所述實施例的拋光墊之拋光層的一部分之示意性剖面視圖。Figure 2 is a schematic cross-sectional view illustrating a portion of a polishing layer of a polishing pad according to embodiments described herein.
第3圖為經配置以使用根據本文所述實施例形成之拋光墊之例示性拋光系統的示意性側視圖。Figure 3 is a schematic side view of an exemplary polishing system configured to use polishing pads formed according to embodiments described herein.
第4圖為根據本文所述實施例之一拋光墊的示意性等角剖面視圖,該拋光墊的特徵在於選擇性佈置的孔剖面視圖。Figure 4 is a schematic isometric cross-sectional view of a polishing pad featuring a cross-sectional view of selectively arranged holes according to an embodiment described herein.
第5A圖至第5F圖為根據本文所述實施例之可替代第4圖中所示的襯墊設計使用之各種拋光墊設計的示意性平面圖。FIGS. 5A-5F are schematic plan views of various polishing pad designs that may be used in place of the pad design shown in FIG. 4 according to embodiments described herein.
第6A圖為可用以形成本文所述拋光墊的增材製造系統之示意性剖面視圖。Figure 6A is a schematic cross-sectional view of an additive manufacturing system that can be used to form the polishing pads described herein.
第6B圖為根據本文所述實施例之示意性地圖示出安置在先前已形成之列印層的表面上之液滴的特寫橫剖面視圖。Figure 6B is a close-up cross-sectional view schematically illustrating a droplet disposed on the surface of a previously formed printing layer, according to embodiments described herein.
第7圖為根據本文所述實施例之闡述形成拋光墊的方法之流程圖。7 is a flowchart illustrating a method of forming a polishing pad according to embodiments described herein.
第8圖為圖示具有及不具有多官能丙烯酸酯組分之預聚物組成物的轉化率-暴露曲線之曲線圖。Figure 8 is a graph illustrating conversion versus exposure curves for prepolymer compositions with and without a multifunctional acrylate component.
為了便於理解,在可能的情況下,已使用相同元件符號來表示諸圖中所共有之相同元件。預期一個實施之元件及特徵可有益地併入其他實施中而無需進一步敘述。To facilitate understanding, identical reference numerals have been used, where possible, to denote identical elements that are common to the figures. It is contemplated that elements and features of one implementation may be beneficially incorporated in other implementations without further recitation.
國內寄存資訊(請依寄存機構、日期、號碼順序註記) 無 國外寄存資訊(請依寄存國家、機構、日期、號碼順序註記) 無 Domestic deposit information (please note in order of depositor, date, and number) none Overseas storage information (please note in order of storage country, institution, date, and number) none
400:拋光墊 400: polishing pad
401:拋光表面 401: polished surface
404:拋光元件 404: polishing element
405:柱 405: column
406:基礎層 406: base layer
407:同心環 407: concentric ring
410:孔特徵 410: Hole Features
412:聚合物材料 412: polymer material
418:通道 418: channel
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---|---|---|---|---|
CA2143297C (en) * | 1992-08-26 | 2005-10-18 | Bryan Nicholas Flynn | Water proofing liner |
US6562913B1 (en) * | 1999-09-16 | 2003-05-13 | Texas Petrochemicals Lp | Process for producing high vinylidene polyisobutylene |
KR100804275B1 (en) * | 2006-07-24 | 2008-02-18 | 에스케이씨 주식회사 | Chemical Mechanical Polishing Pads Comprising Liquid Organic Material Core Encapsulated by Polymer Shell And Methods for Producing The Same |
US9156124B2 (en) * | 2010-07-08 | 2015-10-13 | Nexplanar Corporation | Soft polishing pad for polishing a semiconductor substrate |
CN113146464A (en) * | 2016-01-19 | 2021-07-23 | 应用材料公司 | Porous chemical mechanical polishing pad |
EP3790706A4 (en) * | 2018-05-07 | 2022-02-16 | Applied Materials, Inc. | Hydrophilic and zeta potential tunable chemical mechanical polishing pads |
US20200230781A1 (en) * | 2019-01-23 | 2020-07-23 | Applied Materials, Inc. | Polishing pads formed using an additive manufacturing process and methods related thereto |
US11851570B2 (en) * | 2019-04-12 | 2023-12-26 | Applied Materials, Inc. | Anionic polishing pads formed by printing processes |
CN112062146A (en) * | 2020-08-19 | 2020-12-11 | 包头天骄清美稀土抛光粉有限公司 | Cerium-yttrium grinding material for CMP and preparation method thereof |
-
2021
- 2021-05-17 US US17/321,694 patent/US20220362904A1/en active Pending
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2022
- 2022-01-21 KR KR1020237043451A patent/KR20240009471A/en unknown
- 2022-01-21 WO PCT/US2022/013292 patent/WO2022245404A1/en active Application Filing
- 2022-01-21 CN CN202280041480.9A patent/CN117545593A/en active Pending
- 2022-02-14 TW TW111105178A patent/TW202246041A/en unknown
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WO2022245404A1 (en) | 2022-11-24 |
CN117545593A (en) | 2024-02-09 |
US20220362904A1 (en) | 2022-11-17 |
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