TW202244507A - Probe systems and methods of forming an integrated circuit die - Google Patents
Probe systems and methods of forming an integrated circuit die Download PDFInfo
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- G—PHYSICS
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- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/06—Measuring leads; Measuring probes
- G01R1/067—Measuring probes
- G01R1/073—Multiple probes
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- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
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- G01R1/06—Measuring leads; Measuring probes
- G01R1/067—Measuring probes
- G01R1/06711—Probe needles; Cantilever beams; "Bump" contacts; Replaceable probe pins
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- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
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- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/2851—Testing of integrated circuits [IC]
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- G01R31/286—External aspects, e.g. related to chambers, contacting devices or handlers
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- G01R31/2851—Testing of integrated circuits [IC]
- G01R31/2855—Environmental, reliability or burn-in testing
- G01R31/286—External aspects, e.g. related to chambers, contacting devices or handlers
- G01R31/2863—Contacting devices, e.g. sockets, burn-in boards or mounting fixtures
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- G—PHYSICS
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- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
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- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/2851—Testing of integrated circuits [IC]
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- G01R31/2872—Environmental, reliability or burn-in testing related to electrical or environmental aspects, e.g. temperature, humidity, vibration, nuclear radiation
- G01R31/2879—Environmental, reliability or burn-in testing related to electrical or environmental aspects, e.g. temperature, humidity, vibration, nuclear radiation related to electrical aspects, e.g. to voltage or current supply or stimuli or to electrical loads
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- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/2851—Testing of integrated circuits [IC]
- G01R31/2886—Features relating to contacting the IC under test, e.g. probe heads; chucks
- G01R31/2889—Interfaces, e.g. between probe and tester
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
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Abstract
Description
此說明書大體上係關於一種用於測試半導體裝置之設備,且更特定言之,係關於一種具有一微簾幕吹掃空氣系統之探針卡。This specification relates generally to an apparatus for testing semiconductor devices, and more particularly to a probe card with a micro-curtain purge air system.
對於高壓探針,使用吹掃空氣可幫助減少晶圓起電弧。歸因於例如一般技術者通常稱之為垂直探針卡之探針卡領域中之頭至晶圓間距之原因,傳統之吹掃空氣佈線之使用係不可製造的。另外,開放之環境亦使加壓氣體(亦係一阻弧劑)成為一挑戰。For high voltage probes, use purge air to help reduce wafer arcing. The use of conventional purge air wiring is not manufacturable due to reasons such as the head-to-wafer spacing in the field of probe cards commonly referred to by those skilled in the art as vertical probe cards. Additionally, the open environment makes the pressurized gas (also an arc arrester) a challenge.
一種探針系統,其包含一腔室及部分定位在該腔室內之一探針接腳。該腔室包含經組態以容許一流體流入該腔室中之一流體入口,以及形成在該腔室之一底部部分之一或多個開口。該探針接腳包含自該腔室沿一第一方向延伸之一尖端部分,其中該一或多個開口經配置以容許該流體透過其射出,以在該尖端部分之一側表面上提供一流體簾幕。A probe system includes a chamber and a probe pin partially positioned within the chamber. The chamber includes a fluid inlet configured to allow a fluid to flow into the chamber, and one or more openings formed in a bottom portion of the chamber. The probe pin includes a tip portion extending from the chamber in a first direction, wherein the one or more openings are configured to allow the fluid to exit therethrough to provide a tip portion on a side surface of the tip portion. Fluid curtain.
相關申請案的交叉參考 本申請案主張2021年3月22日申請之美國臨時專利申請案第63/164,194號之優先權,該申請案以引用方式併入本文中。 Cross References to Related Applications This application claims priority to U.S. Provisional Patent Application No. 63/164,194, filed March 22, 2021, which is incorporated herein by reference.
本說明書係關於一種具有一微簾幕吹掃空氣系統之探針卡。This specification relates to a probe card with a micro-curtain purge air system.
圖1係根據本說明書之一第一實施方案之用於一探針系統100中之一探針卡或一探針總成之一實例之一截面視圖。探針系統100包含:一印刷電路板102,其具有一中心開口104;一中介層106,其至少部分定位在中心開口104內;一腔室108,其具有一流體入口110,流體入口110經組態以容許一流體流入腔室108中;以及一或多個開口112,其等形成在腔室108之一底部部分114處。流體入口110可為與腔室108分離之一組件,或可與腔室108整合。流體可為一氣體,諸如壓縮乾燥空氣或N
2,或可為當進入腔室時為液體且在腔室108中經歷至一氣體之一相變之一材料。在一個實例中,液體較佳地提供高介電強度且不在藉由探針系統100來測試之一晶圓上留下一殘餘物。該液體包含但不限於以下材料中之一者,例如天然及合成烴基油、矽酮流體、全氟聚醚氟化流體(Galden流體)、合成及天然酯及奈米介電改性液體及氣態介質以及液體N
2、Ar、SF
6或其等類似組合。在另一實例中,流體可與氣體及液體混合。探針系統100進一步包含部分定位在腔室108內之探針接腳116。中介層106包含導電跡線107,導電跡線107經組態以將各探針接腳116之一第一端118耦合至印刷電路板102。一探針接腳116之與第一端118相對之一尖端部分120沿著一第一方向119自腔室108延伸。在一個實例中,尖端部分120自腔室108延伸穿過一通道121,通道121之直徑剛好足夠大以容許尖端部分120穿過。一或多個開口112經配置以水平地圍繞探針接腳116,以容許流體透過其射出,以在尖端部分120之一側表面上以及在腔室108下方被測試之一晶圓或一晶粒之一頂表面上提供流體簾幕。在一較佳實例中,除了流體入口110及一或多個開口112之外,腔室108係密封的。在一個實例中,流體入口110經組態以透過螺紋與一流體管接合。然而,能夠將流體傳送至腔室108中之任何其他流體傳送連接機構係適用的。
1 is a cross-sectional view of an example of a probe card or a probe assembly used in a
圖2A及圖2B係根據本說明書之第一實施方案之圖1之虛線框中之腔室108之一部分之各自放大仰視平面圖。在一個實例中,如圖2A中展示,各探針接腳116由一C形開口112圍繞。在另一實例中,如圖2B中展示,探針接腳116由藉由繫桿122分離之兩個或多於兩個弧形開口112圍繞。2A and 2B are respective enlarged bottom plan views of a portion of the
圖3A至圖3D展示根據本說明書之第一實施方案之自圖2A或圖2B之線A-A’截取之開口112之實例截面視圖。各開口112具有靠近尖端部分120之一第一內壁124及遠離探針接腳116之一第二內壁126。如圖3A中展示,在一個實例中,第一內壁124及第二內壁126兩者平行於探針接腳116。如圖3B至圖3D中展示,在其他實例中,第一內壁124及第二內壁126中之至少一者之一上端之間的一距離大於第一內壁124及第二內壁126中之該至少一者之一下端之間的一距離,以迫使射出流體流向尖端部分120。Figures 3A-3D show example cross-sectional views of opening 112 taken from line A-A' of Figure 2A or Figure 2B according to a first embodiment of the present specification. Each
圖4A描繪圍繞穿過圖3A之開口112形成之尖端部分120之流體流,且圖4B描繪圍繞穿過本說明書之圖3B至圖3D之開口112之尖端部分120之流體流。在探針測試期間,尖端部分120接觸一裝置134之一墊132。如圖4A中展示,流體流136沿著尖端部分120之一側表面,且如圖4B中展示,流體流138朝向尖端部分120。Figure 4A depicts fluid flow around
圖5A至圖5C展示根據本說明書之實施方案之圖1之探針系統100之腔室108之開口112之實例之仰視平面圖。如圖5A及圖5B中展示,在一個實例中,一或多個開口112經配置以圍繞多個探針接腳116。在圖5C中,額外開口140形成在相鄰之探針接腳116之間。5A-5C show bottom plan views of examples of
圖6係根據本說明書之一實施方案之圖1之探針系統100之一俯視平面圖。中介層106至少部分定位在印刷電路板102之中心開口104內。腔室108之流體入口110延伸穿過中介層106。FIG. 6 is a top plan view of the
圖7係根據本說明書之一第二實施方案之用於一探針系統200中之一探針卡或一探針總成之一實例之一截面視圖。探針系統200實質上類似於圖1之探針系統100,除了探針接腳216之尖端部分220自腔室208沿著第一方向219延伸穿過形成在腔室208之底部之一開口212外。開口212之直徑大於探針接腳216之一直徑,以在開口212之一內側壁226與探針接腳216之間提供一間隙225。間隙225經組態以容許流體透過其射出,以在尖端部分220之一側表面上以及在腔室208下方被測試之一晶圓或一晶粒之一頂表面上提供一流體簾幕。7 is a cross-sectional view of an example of a probe card or a probe assembly used in a
圖8A係根據本說明書之第二實施方案之在圖7之腔室208之底部處之一開口212之一實例之一仰視平面圖。圖8B係根據本說明書之第二實施方案之自圖8A之線B-B’截取之開口之一三維截面視圖。在一較佳實例中,探針接腳216水平地定位在開口212之中心。8A is a bottom plan view of an example of an opening 212 at the bottom of the
圖9A及圖9B展示根據本說明書之第二實施方案之自圖8A之線B-B'截取之開口212之實例截面視圖。如圖9A中展示,在一個實例中,內側壁226與探針接腳216平行,且如圖9B中展示,在另一實例中,開口212沿著第一方向219漸縮,使得開口212之一上端處之一直徑大於開口212之一下端處之一直徑,以迫使射出之流體流向尖端部分220。9A and 9B show example cross-sectional views of opening 212 taken from line BB' of FIG. 8A according to a second implementation of the present specification. As shown in FIG. 9A , in one example,
圖10至圖12係一探針系統之替代實例之截面視圖。儘管圖10至圖12展示圖1之印刷電路板102、中介層106及腔室108之不同組合之實例,但此等配置獨立於腔室108底部之開口112。圖7之開口212亦可應用於圖10至圖12之探針系統中之任一者。如圖1及圖7中展示,包含在一底部部分具有開口之一腔室之一探針系統不限於圖1及圖10至圖12中展示之印刷電路板、中介層及腔室之組合。10-12 are cross-sectional views of alternative examples of a probe system. Although FIGS. 10-12 show examples of different combinations of the printed
參考圖10,在探針系統300中,腔室308之側壁350延伸穿過中介層306及/或印刷電路板302,使得腔室308之一頂部部分352配置在中介層306上方。類似於圖1之探針系統100,探針系統300包含耦合至中介層306之跡線307之探針接腳316。各探針接腳316具有自腔室308延伸之一尖端部分320。腔室308包含形成在腔室308之一底部部分處之一或多個開口312。一或多個開口312可配置為圖1之一或多個開口112,或配置為圖7之一或多個開口212。Referring to FIG. 10 , in
參考圖11,在探針系統400中,包含流體入口410之整個腔室408配置在印刷電路板402下方。類似於圖1之探針系統100,探針系統400包含耦合至中介層406之跡線407之探針接腳416。各探針接腳416具有自腔室408延伸之一尖端部分420。腔室408包含形成在腔室408之一底部部分處之一或多個開口412。一或多個開口412可配置為圖1之一或多個開口112,或配置為圖7之一或多個開口212。Referring to FIG. 11 , in the
參考圖12,探針系統500包含定位在一印刷電路板502與一腔室508之間的一中介層506。中介層506包含跡線507,跡線507經組態以將探針接腳516耦合至印刷電路板502。流體入口510延伸穿過中介層506及印刷電路板502。類似於圖1之探針系統100,各探針接腳516具有自腔室508延伸之一尖端部分520。腔室508包含形成在腔室508之一底部部分處之一或多個開口512。一或多個開口512可配置如圖1之一或多個開口112,或配置如圖7之一或多個開口212。Referring to FIG. 12 ,
圖13展示根據本說明書之一第三實施方案之形成一積體電路晶粒之一流程600。FIG. 13 shows a
在步驟602,提供包含兩個或多於兩個積體電路晶粒606之一半導體晶圓604。在另一實例中,提供包含兩個或多於兩個未囊封晶粒之一總成(未展示)。該總成可包含安裝在一引線框陣列或一基板陣列上之一或多個未囊封晶粒。暴露晶粒之墊以進行探針測試。At
在步驟608,將半導體晶圓604定位在一載體609上,且藉由一探針系統610測試積體電路晶粒606。在一個實例中,探針系統包含一腔室612,腔室612包含適於與一流體管616接合以容許一流體流入腔室612中之一流體入口614。腔室612進一步包含形成在腔室612之一底部部分處之一或多個開口618,以及部分定位在腔室612內且具有自腔室612沿著一第一方向623延伸之一尖端部分622之一探針接腳620。一或多個開口618圍繞探針接腳620以容許流體透過一或多個開口618射出,以在尖端部分622之一側表面上以及在腔室612下方被測試之一晶圓或一晶粒之一頂表面上提供一流體簾幕。At
在另一實例中,參考圖7,探針接腳620具有自腔室612延伸穿過形成在腔室612底部之一開口(諸如圖7之開口212)之一尖端部分622。尖端部分622與開口618之一內壁之間的一間隙容許流體自腔室612射出,以在尖端部分622之一側表面上以及在腔室612下方被測試之一晶圓或一晶粒之一頂表面上提供一流體簾幕。In another example, referring to FIG. 7 ,
在步驟624,對半導體晶圓604進行單切,以將積體電路晶粒606彼此分離。At
在步驟626,組裝積體電路晶粒606以形成一半導體裝置628。在圖13中,半導體裝置628係一球柵陣列(BGA)封裝,然而,其他類型之封裝(諸如雙列直插式封裝(DIP)、四平面封裝(QFP)、四平面無引線(QFN)封裝)亦係適用的。At
在此說明書中,術語「耦合」可涵蓋實現與本說明書一致之一功能關係之連接、通信、或信號路徑。例如,若裝置A產生一信號以控制裝置B執行一動作,則:(a)在一第一實例中,裝置A藉由直接連接耦合至裝置B;或(b)在一第二實例中,若中介元件C未更改裝置A與裝置B之間的功能關係,則裝置A透過中介元件C耦合至裝置B,使得裝置B由裝置A經由裝置A產生之控制信號控制。In this specification, the term "coupled" may encompass a connection, communication, or signal path that achieves a functional relationship consistent with this specification. For example, if device A generates a signal to control device B to perform an action, then: (a) in a first instance, device A is coupled to device B by a direct connection; or (b) in a second instance, If intermediary element C does not change the functional relationship between device A and device B, then device A is coupled to device B through intermediary element C, so that device B is controlled by device A via the control signal generated by device A.
在描述之實例中,修改係可能的,且在發明申請專利範圍之範疇內,其他實例係可能的。In the examples described, modifications are possible, and other examples are possible within the scope of the claimed invention.
100:探針系統 102:印刷電路板 104:中心開口 106:中介層 107:導電跡線 108:腔室 110:流體入口 112:開口 114:底部部分 116:探針接腳 118:第一端 119:第一方向 120:尖端部分 121:通道 122:繫桿 124:第一內壁 126:第二內壁 132:墊 134:裝置 136:流體流 138:流體流 140:額外開口 200:探針系統 208:腔室 212:開口 216:探針接腳 219:第一方向 220:尖端部分 225:間隙 226:內側壁 300:探針系統 302:印刷電路板 306:中介層 307:跡線 308:腔室 312:開口 316:探針接腳 320:尖端部分 350:側壁 352:頂部部分 400:探針系統 402:印刷電路板 406:中介層 407:跡線 408:腔室 410:流體入口 412:開口 416:探針接腳 420:尖端部分 500:探針系統 502:印刷電路板 506:中介層 507:跡線 508:腔室 510:流體入口 512:開口 516:探針接腳 520:尖端部分 600:流程 602:步驟 604:半導體晶圓 606:積體電路晶粒 608:步驟 609:載體 610:探針系統 612:腔室 614:流體入口 616:流體管 618:開口 620:探針接腳 622:尖端部分 624:步驟 626:步驟 628:半導體裝置 100: Probe system 102: Printed circuit board 104: Center opening 106: Intermediary layer 107: Conductive trace 108: chamber 110: fluid inlet 112: opening 114: Bottom part 116: Probe pin 118: first end 119: First Direction 120: tip part 121: channel 122: tie rod 124: the first inner wall 126: Second inner wall 132: Pad 134: device 136: Fluid flow 138: Fluid flow 140: extra opening 200: probe system 208: chamber 212: opening 216: Probe pin 219: First direction 220: tip part 225: Gap 226: inner wall 300: probe system 302: Printed circuit board 306: intermediary layer 307:Trace 308: chamber 312: opening 316: Probe pin 320: tip part 350: side wall 352:top part 400: Probe system 402: Printed Circuit Board 406: intermediary layer 407: Trace 408: chamber 410: Fluid inlet 412: opening 416: Probe pin 420: tip part 500: probe system 502: Printed circuit board 506: intermediary layer 507:Trace 508: chamber 510: fluid inlet 512: opening 516: Probe pin 520: tip part 600: process 602: Step 604: Semiconductor wafer 606: Integrated Circuit Die 608: Step 609: carrier 610: Probe system 612: chamber 614: Fluid inlet 616: Fluid Tube 618: opening 620: Probe pin 622: tip part 624: step 626: step 628: Semiconductor devices
圖1係根據本說明書之一第一實施方案之一探針系統之一實例之一截面視圖。Fig. 1 is a cross-sectional view of an example of a probe system according to a first embodiment of the present specification.
圖2A及圖2B展示根據本說明書之第一實施方案之圖1之探針系統之一腔室之一開口之示範性仰視平面圖。2A and 2B show exemplary bottom plan views of an opening of a chamber of the probe system of FIG. 1 according to a first implementation of the present specification.
圖3A至圖3D展示根據本說明書之第一實施方案之自圖2A及圖2B之線A-A'截取之開口之示範性截面視圖。3A-3D show exemplary cross-sectional views of openings taken from line AA' of FIGS. 2A and 2B according to a first embodiment of the present description.
圖4A及圖4B描繪圍繞藉由本說明書之圖3A至圖3D之開口形成之一接腳之尖端部分之空氣流。4A and 4B depict air flow around the tip portion of a pin formed by the opening of FIGS. 3A-3D of the present specification.
圖5A至圖5C展示根據本說明書之實施方案之一腔室之一部分之替代實例之仰視平面圖。5A-5C show bottom plan views of alternative examples of a portion of a chamber according to implementations of the present specification.
圖6係根據本說明書之一實施方案之圖1之探針系統之腔室之一俯視平面圖。6 is a top plan view of a chamber of the probe system of FIG. 1 according to an embodiment of the present specification.
圖7係根據本說明書之一第二實施方案之一探針系統之一實例之一截面視圖。Fig. 7 is a cross-sectional view of an example of a probe system according to a second embodiment of the present specification.
圖8A係根據本說明書之第二實施方案之圖7之探針系統之一腔室之一開口之一示範性仰視平面圖。8A is an exemplary bottom plan view of an opening of a chamber of the probe system of FIG. 7 according to a second embodiment of the present specification.
圖8B係根據本說明書之第二實施方案之自圖8A之線B-B’截取之開口之一三維截面視圖。Fig. 8B is a three-dimensional cross-sectional view of the opening taken from line B-B' of Fig. 8A according to the second embodiment of the present specification.
圖9A及圖9B展示根據本說明書之第二實施方案之自圖8A之線B-B'截取之開口之截面視圖。9A and 9B show cross-sectional views of the opening taken from line BB' of FIG. 8A according to a second embodiment of the present description.
圖10至圖12係根據本說明書之一探針系統之實例之截面視圖。10-12 are cross-sectional views of an example of a probe system according to the present specification.
圖13展示根據本說明書之一第三實施方案之形成一半導體裝置之一流程。FIG. 13 shows a flow of forming a semiconductor device according to a third embodiment of the present specification.
100:探針系統 100: Probe system
102:印刷電路板 102: Printed circuit board
104:中心開口 104: Center opening
106:中介層 106: Intermediary layer
107:導電跡線 107: Conductive trace
108:腔室 108: chamber
110:流體入口 110: fluid inlet
112:開口 112: opening
114:底部部分 114: Bottom part
116:探針接腳 116: Probe pin
118:第一端 118: first end
119:第一方向 119: First Direction
120:尖端部分 120: tip part
121:通道 121: channel
Claims (19)
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US202163164194P | 2021-03-22 | 2021-03-22 | |
US63/164,194 | 2021-03-22 |
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TW202244507A true TW202244507A (en) | 2022-11-16 |
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TW111109318A TW202244507A (en) | 2021-03-22 | 2022-03-15 | Probe systems and methods of forming an integrated circuit die |
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CN (1) | CN114624484A (en) |
TW (1) | TW202244507A (en) |
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