TW202242517A - Display device - Google Patents

Abstract

A display device includes a first flexible layer, a second flexible layer, a patterned support layer, an auxiliary support material, a conductive via structure, a display element layer and a chip bonding layer. The second flexible layer is disposed on the first flexible layer. The patterned support layer is sandwiched between the first flexible layer and the second flexible layer, and has a plurality of openings. The auxiliary support material is disposed in the plurality of openings. The conductive via structure passes through the first flexible layer, the second flexible layer and the patterned support layer. The display element layer is disposed on the second flexible layer. The first flexible layer is between the second flexible layer and the chip bonding layer, and the chip bonding layer is electrically connected to the display element layer through the conductive via structure.

Description

display device

The present invention relates to a display device, and in particular to a display device with good substrate stability.

In recent years, in order to provide a more aesthetically pleasing product appearance, display devices are gradually developing from flat panels to flexible flex panels. Generally speaking, the manufacturing method of the flexible flexible display device includes the flexible element array substrate manufacturing process, which involves forming the active element layer after forming the flexible substrate on the glass carrier, and forming various protective layers on the active element layer to help In performing procedures such as glass carrier stripping and electroplating processes.

However, since the above procedure involves multiple stripping procedures and temperature rise and fall treatments, the Stiffness and stability of the flexible substrate will deteriorate after repeated stretching and thermal expansion and contraction, and in severe cases, it may even affect the subsequent Process accuracy and production yield.

The invention provides a display device with good substrate stability.

An embodiment of the present invention proposes a display device, comprising: a first flexible layer; a second flexible layer located on the first flexible layer; a first patterned support layer located on the first flexible layer and the second flexible layer. Between the flexible layers, there are multiple openings; the auxiliary supporting material is arranged in the multiple openings; the through-hole conductive structure runs through the first flexible layer, the second flexible layer, and the first patterned support layer; the display element layer, located on the second flexible layer; and a chip bonding layer, wherein the first flexible layer is located between the second flexible layer and the chip bonding layer, and the chip bonding layer is electrically connected to the display element layer through a conductive structure of a through hole .

In an embodiment of the present invention, the material of the above-mentioned first flexible layer and the second flexible layer includes polyimide, polycarbonate, polyester, cycloolefin copolymer, or metal chrome substrate- Cycloolefin copolymers.

In an embodiment of the present invention, the above-mentioned first patterned support layer has a mesh or stripe pattern.

In an embodiment of the present invention, the above-mentioned first patterned support layer includes metal.

In an embodiment of the present invention, the aforementioned auxiliary support material includes silicon oxide, silicon nitride, acrylic, siloxane, polyimide, or epoxy resin.

In an embodiment of the present invention, the above-mentioned display element layer includes a switch element array, and the switch element array is electrically connected to the chip bonding layer.

In an embodiment of the present invention, the above-mentioned first patterned supporting layer has a disconnection slit, and the disconnection slit is adjacent to the through-hole conductive structure.

In an embodiment of the present invention, the aforementioned disconnection gap surrounds the through-hole conductive structure.

In an embodiment of the present invention, the above display device further includes a first barrier layer located between the first flexible layer and the first patterned support layer.

In an embodiment of the present invention, the above display device further includes a second barrier layer located between the second flexible layer and the first patterned support layer.

In an embodiment of the present invention, the above display device further includes a third flexible layer located between the first flexible layer and the chip bonding layer.

In an embodiment of the present invention, the above display device further includes a second patterned support layer located between the third flexible layer and the first flexible layer.

In an embodiment of the present invention, the above-mentioned second patterned support layer includes metal.

In an embodiment of the present invention, the above display device further includes a printed circuit board located between the first flexible layer and the chip bonding layer.

In an embodiment of the present invention, the above display device further includes an adhesive layer located between the first flexible layer and the printed circuit board.

In order to make the above-mentioned features and advantages of the present invention more comprehensible, the following specific embodiments are described in detail together with the accompanying drawings.

FIG. 1A is a schematic cross-sectional view of a display device 10 according to an embodiment of the invention. FIG. 1B is a schematic top view of the substrate structure SS1 in the display device 10 of FIG. 1A . Fig. 1C is a schematic cross-sectional view taken along the section line A-A' of Fig. 1B. In order to make the drawing more concise, FIG. 1A simplifies the structure of the patterned support layer 130 . For the detailed structure of the patterned support layer 130 , please refer to FIG. 1B and FIG. 1C .

Please refer to FIG. 1A to FIG. 1C at the same time, the display device 10 includes: a flexible layer 110; a flexible layer 120 located on the flexible layer 110; a patterned support layer 130 located between the flexible layer 110 and the flexible layer 120, And it has a plurality of openings O1; the auxiliary support material RM is set in the opening O1; the through-hole conductive structure CV runs through the flexible layer 110, the flexible layer 120, and the patterned support layer 130; the display element layer 140 is located in the flexible on the layer 120; and the chip bonding layer 150, wherein the flexible layer 110 is located between the flexible layer 120 and the chip bonding layer 150, and the chip bonding layer 150 is electrically connected to the display element layer 140 through the via conductive structure CV.

In the display device 10 according to an embodiment of the present invention, by sandwiching the patterned support layer 130 embedded with the auxiliary support material RM between the flexible layers 110, 120, the tensile strength of the flexible layers 110, 120 can be improved. Stretchability, thereby improving the overall stiffness of the flexible layers 110, 120 and the patterned support layer 130, and enabling the substrate structure SS1 of the display device 10 to have good stability.

Hereinafter, with reference to the drawings, the implementation of each component of the display device 10 will be continuously described.

Please refer to FIG. 1A, in this embodiment, the flexible layers 110, 120 and the patterned support layer 130 can constitute the substrate structure SS1 of the display device 10, the display element layer 140 can be located on the upper side of the substrate structure SS1, and the chip bonding layer 150 can be Located on the lower side of the substrate structure SS1 , the via conductive structure CV penetrates through the substrate structure SS1 to electrically connect the display element layer 140 and the chip bonding layer 150 .

The display device 10 may further include a driving element DC disposed on the chip bonding layer 150 , and the driving element DC may transmit a driving signal to the display element layer 140 through the chip bonding layer 150 and the via conductive structure CV. The driving element DC may include a chip, and the chip may be bonded to the chip bonding layer 150 by a die-chip bonding technique.

The display element layer 140 may include a plurality of light emitting elements LD and a switch element array TA, wherein the plurality of light emitting elements LD may be arranged in a matrix to form a plurality of sub-pixels of the display device 10, and each sub-pixel emits light The elements LD can be individually controlled by the corresponding switching elements in the switching element array TA. Specifically, the plurality of light emitting elements LD may be fabricated on a growth substrate (such as a sapphire substrate), and then transferred to the display element layer 140 through a mass transfer process. Each light emitting element LD may include electrodes E1, E2, and the electrode E1 may be electrically connected to the switching element array TA, and individually controlled by the corresponding switching elements in the switching element array TA. The switch element array TA can be electrically connected to the chip bonding layer 150 , and the switch elements in the switch element array TA can be turned on or off by receiving the scan signal from the driving element DC. The electrode E2 can be electrically connected to the chip bonding layer 150 and independently receives a signal provided by the driving element DC on the chip bonding layer 150 . In some embodiments, the electrodes E2 of the plurality of light emitting elements LD may be electrically connected to each other and/or be applied with the same common voltage by the driving element DC during operation. In this embodiment, the light emitting element LD may be a self-luminous element, such as a micro light emitting diode (Micro LED) or an organic electroluminescent diode (OLED), etc., but the present invention is not limited thereto.

In some embodiments, the display element layer 140 may also include a non-self-luminous display medium and a switching element array TA. For example, the display element layer 140 may include a liquid crystal layer, a pixel electrode pattern, and a switching element array, wherein the switching elements in the switching element array can individually control the corresponding pixel electrode pattern, so as to drive the liquid crystal molecules in the liquid crystal layer to carry out orientation. transform.

In some embodiments, the display device 10 may further include a color conversion layer CT disposed on the display element layer 140, wherein the color conversion layer CT may include phosphor powder or a similar wavelength conversion material to allow the light emitted by the light emitting element LD to The light is converted into light of different colors to achieve a full-color display effect. In other embodiments, the plurality of light-emitting elements LD may include a plurality of red light-emitting diodes, a plurality of green light-emitting diodes, and a plurality of blue light-emitting diodes, so as to achieve a full-color display effect. When the emission colors of the plurality of light emitting elements LD are different, the color conversion layer CT in FIG. 1A can be selectively omitted or retained in the display device 10 . In other embodiments, the plurality of light emitting elements LD may all be white light emitting diodes, and the color conversion layer CT may be a color filter layer to achieve a full-color display effect.

In this embodiment, the substrate structure SS1 includes flexible layers 110, 120 and a patterned support layer 130, and the substrate structure SS1 can carry the display element layer 140 and the color conversion layer CT above it, and the chip bonding layer 150 below it. . In addition, the substrate structure SS1 has a through hole VA, and the through hole VA penetrates through the flexible layers 110 , 120 and the patterned support layer 130 . The via conductive structure CV is disposed in the via hole VA, and the via conductive structure CV can be electrically connected to the chip bonding layer 150 through the wire W1 under the flexible layer 110 . In some embodiments, the via hole VA also penetrates the display element layer 140 , and the via hole conductive structure CV can be electrically connected to the light emitting element LD through the wire W2 above the flexible layer 120 .

In this embodiment, the via conductive structure CV and the wire W1 can be formed by an electroplating process, and the via conductive structure CV includes a seed layer SL. During the electroplating process, the seed layer SL facilitates the metal attachment in the electroplating solution, thereby forming the through-hole conductive structure CV and the wire W1. The material of the seed layer SL may be nickel palladium (Ni—Pd), but the present invention is not limited thereto. Based on the consideration of conductivity, metals with good conductivity can be used for the via conductive structure CV and the wires W1 and W2 , such as gold, silver, copper, aluminum, titanium, molybdenum or combinations thereof, but the invention is not limited thereto. In some embodiments, in order to avoid surface oxidation of the wire W1, an anti-oxidation layer AO can be formed on the surface of the wire W1 by ion exchange, and the material of the anti-oxidation layer AO can be tin (Sn), but the present invention This is not the limit.

Please refer to FIG. 1B and FIG. 1C at the same time. The material of the flexible layers 110 and 120 can be polyimide (polyimide, PI), polycarbonate (polycarbonate, PC), polyester (polyester, PET), cycloolefin copolymer (cyclic olefin copolymer, COC), metal chromium compound substrate-cycloolefin copolymer (metallocene-based cyclic olefin copolymer, mCOC) or other suitable materials, the present invention is not limited thereto.

In this embodiment, the patterned support layer 130 may have a plurality of transversely elongated openings O1, and the openings O1 may pass through the patterned support layer 130, so that the patterned support layer 130 includes a plurality of transverse straight bars and has a strip shape. pattern. The patterned support layer 130 may have a larger Young's modulus than the flexible layers 110 , 120 . For example, when the material of the flexible layers 110 and 120 is polyimide, the material of the patterned support layer 130 can be a metal or alloy with a Young's modulus greater than that of polyimide, such as gold or silver. , copper, aluminum, titanium, molybdenum or combinations thereof, but the present invention is not limited thereto.

In this embodiment, the auxiliary supporting material RM is disposed in the opening O1. Since the opening O1 runs through the patterned support layer 130 , the auxiliary support material RM can extend to the periphery of the patterned support layer 130 . At the same time, the via conductive structure CV can penetrate through the auxiliary support material RM around the patterned support layer 130 to avoid unnecessary electrical connection with the patterned support layer 130 . The auxiliary supporting material RM may include an insulating material, such as silicon oxide (SiOx), silicon nitride (SiNx), or an organic insulating material of ultra high aperture technology (Ultra High Aperture, UHA). For example, the organic insulating material may include acrylic (acrylic) material, siloxane (siloxane) material, polyimide (polyimide) material, epoxy resin (epoxy) material, etc. limit.

FIG. 2A is a schematic top view of a substrate structure SS2 according to an embodiment of the invention. Fig. 2B is a schematic cross-sectional view taken along the section line B-B' of Fig. 2A. Compared with the substrate structure SS1 shown in FIGS. 1B to 1C , the structure in the substrate structure SS2 shown in FIGS. 2A to 2B is different in that: the substrate structure SS2 includes flexible layers 110, 120 and patterned support layer 230, and the patterned support layer 230 has a plurality of longitudinal strip-shaped openings O2, so that the patterned support layer 230 has a longitudinal strip pattern.

In addition, the auxiliary support material RM can be disposed in the opening O2 and extend to the periphery of the patterned support layer 230 . Since the via conductive structure CV penetrates the patterned support layer 230, a disconnection gap G2 can be formed in the patterned support layer 230 adjacent to the via conductive structure CV, and the patterned support layer 230 is divided into two sections P1 , P2, wherein the section P1 surrounds the via conductive structure CV, and the section P2 is separated from the section P1. In this way, unnecessary electrical connection between the via conductive structure CV and the segment P2 of the patterned supporting layer 230 can be avoided.

FIG. 3 is a schematic top view of a substrate structure SS3 according to an embodiment of the invention. Compared with the substrate structure SS1 shown in FIG. 1B, the structure in the substrate structure SS3 shown in FIG. The layer 330 has a mesh pattern with a plurality of openings O3 in the mesh pattern.

In addition, the auxiliary support material RM is disposed in the opening O3 and extends to the periphery of the patterned support layer 330. At the same time, the via conductive structure CV can pass through the auxiliary support material RM on the periphery of the patterned support layer 330 to avoid contact with the patterned support layer. 330 creates an unnecessary electrical connection.

FIG. 4 is a schematic top view of a substrate structure SS4 according to an embodiment of the invention. Compared with the substrate structure SS1 shown in FIG. 1B, the structure in the substrate structure SS4 shown in FIG. The layer 430 has a mesh pattern composed of horizontal strip patterns and vertical strip patterns, and the mesh pattern has a plurality of openings O4.

In addition, the auxiliary support material RM can be disposed in the opening O4 and extend to the periphery of the patterned support layer 430 . Since some via conductive structures CV penetrate the patterned support layer 430, and some via conductive structures CV penetrate the auxiliary support material RM, disconnection gaps can be formed in the patterned support layer 430 adjacent to the via conductive structures CV. G4, and the patterned supporting layer 430 is divided into a main body section PB and a plurality of sections P4 surrounding the via conductive structure CV, and the plurality of sections P4 are separated from the main body section PB. In this way, unnecessary electrical connection between the via conductive structure CV and the main body section PB of the patterned supporting layer 430 can be avoided.

FIG. 5A is a schematic top view of a substrate structure SS5 according to an embodiment of the invention. Fig. 5B is a schematic cross-sectional view taken along the section line C-C' of Fig. 5A. Compared with the substrate structure SS4 shown in FIG. 4 , the structure in the substrate structure SS5 shown in FIGS. 5A to 5B is different in that: the substrate structure SS5 includes flexible layers 110 , 120 and a patterned support layer 530 , And the patterned support layer 530 has a grid pattern formed by a plurality of regularly arranged openings O5.

In addition, the auxiliary support material RM is disposed in the opening O5 , and the auxiliary support material RM does not extend to the periphery of the patterned support layer 530 . Since the via conductive structure CV penetrates the patterned support layer 530 , a disconnection gap G5 can be formed in the patterned support layer 530 adjacent to the via conductive structure CV, and the disconnection gap G5 surrounds the via conductive structure CV. In this way, unnecessary electrical connection between the via conductive structure CV and the patterned supporting layer 530 can be avoided.

FIG. 6 is a schematic top view of a substrate structure SS6 according to an embodiment of the invention. Compared with the substrate structure SS5 shown in FIG. 5A, the structure in the substrate structure SS6 shown in FIG. The support layer 630 has a plurality of horizontal and oblique elongated openings O6 , and these horizontal and oblique elongated openings O6 cross each other to form a mesh opening.

In addition, the auxiliary support material RM is disposed in the opening O6 , and the auxiliary support material RM does not extend to the periphery of the patterned support layer 630 . Since the via conductive structure CV penetrates the patterned supporting layer 630 , a disconnection gap G6 can be formed in the patterned supporting layer 630 adjacent to the via conductive structure CV, and the disconnection gap G6 surrounds the via conductive structure CV. In this way, unnecessary electrical connection between the via conductive structure CV and the patterned support layer 630 can be avoided.

FIG. 7 is a schematic cross-sectional view of a substrate structure SS7 according to an embodiment of the invention. Compared with the substrate structures SS1~SS6 shown in FIG. 1B to FIG. 6, the difference of the structure in the substrate structure SS7 shown in FIG. 7 is that the substrate structure SS7 includes flexible layers 110, 120, a patterned support layer 730 and barrier layers B1, B2, wherein the patterned support layer 730 may have the same or similar structure as any one of the patterned support layers 130, 230, 330, 430, 530, 630 described in the above embodiments, And the auxiliary support material RM can be disposed in the opening O7 of the patterned support layer 730 .

In this embodiment, the barrier layer B1 is located between the flexible layer 110 and the patterned support layer 730, and the barrier layer B2 is located between the flexible layer 120 and the patterned support layer 730, the barrier layers B1 and B2 can be A stretching and expansion-contraction buffer space is provided between the flexible layers 110 and 120 and the patterned support layer 730 , so as to adjust the stress distribution of the substrate structure SS7 during the deformation process of the flexible layers 110 and 120 .

FIG. 8 is a schematic cross-sectional view of a display device 20 according to an embodiment of the invention. Compared with the display device 10 shown in FIG. 1A, the difference in the structure of the display device 20 shown in FIG. 8 is that the display device 20 further includes a flexible layer 810 and a patterned support layer 830, wherein the flexible layer 810 is located between the flexible layer 110 and the die bonding layer 150 , and the patterned supporting layer 830 is located between the flexible layer 810 and the first flexible layer 110 .

In this embodiment, the material of the flexible layer 810 may be polyimide, polycarbonate, polyester, cycloolefin copolymer, metal chrome substrate-cycloolefin copolymer, or other suitable materials. The patterned support layer 830 may have the same or similar structure as any one of the patterned support layers 130, 230, 330, 430, 530, 630 described in the above embodiments, that is, the patterned support layer 830 has a plurality of openings , and auxiliary supporting materials are disposed in the plurality of openings of the patterned supporting layer 830 . The material of the patterned support layer 830 may have a higher Young's modulus than the flexible layer 810, such as metals such as gold, silver, copper, aluminum, titanium, molybdenum, etc., and the material of the auxiliary support material may include insulating materials. By cross-stacking the flexible layers 110 , 120 , 810 and the patterned support layers 130 , 830 , the stability of the substrate of the display device 20 can be further improved.

FIG. 9 is a schematic cross-sectional view of a display device 30 according to an embodiment of the invention. Compared with the display device 10 shown in FIG. 1A, the difference in the structure of the display device 30 shown in FIG. Between the flexible layer 110 and the chip bonding layer 150 , and the adhesive layer AD is located between the flexible layer 110 and the printed circuit board CB.

In this embodiment, the chip bonding layer 150 can be electrically connected to the printed circuit board CB, and the printed circuit board CB is also electrically connected to the wire W1, and the printed circuit board CB can include a multi-layer structure and multiple wires, such as fan-out Wire. In this way, the via conductive structure CV can be electrically connected to the driving element DC on the chip bonding layer 150 through the traces in the printed circuit board CB. Since the surface of the printed circuit board CB may be uneven, and the wire W1 protrudes from the surface of the flexible layer 110, by providing an adhesive layer AD between the flexible layer 110 and the printed circuit board CB, the printed circuit board can be printed. The circuit board CB is flatly attached to the flexible layer 110 . As a material of the adhesive layer AD, for example, non-conductive insulating adhesive (Non-Conductive Adhesive, NCA) can be used.

To sum up, the display device of the present invention improves the stretch resistance of the flexible layer by interposing a patterned support layer between the double-layer flexible layers and providing an auxiliary support material in the patterned support layer. Therefore, the overall stiffness of the substrate structure of the display device is improved, and the substrate structure of the display device has good stability.

Although the present invention has been disclosed above with the embodiments, it is not intended to limit the present invention. Anyone with ordinary knowledge in the technical field may make some changes and modifications without departing from the spirit and scope of the present invention. The scope of protection of the present invention should be defined by the scope of the appended patent application.

10, 20, 30: display device 110, 120, 810: flexible layer 130, 230, 330, 430, 530, 630, 730, 830: patterned support layer 140: Display component layer 150: Wafer bonding layer A-A', B-B', C-C': hatching AD: Adhesive layer AO: anti-oxidation layer B1, B2: barrier layer CB: printed circuit board CT: color conversion layer CV: Through hole conductive structure DC: drive element E1, E2: electrodes G2, G4, G5, G6: disconnection gap LD: light emitting element O1, O2, O3, O4, O5, O6, O7: open P1, P2, P4: sections PB: body section RM: auxiliary support material SL: seed layer SS1, SS2, SS3, SS4, SS5, SS6, SS7: Substrate structure TA: switching element array VA: through hole W1, W2: wire

FIG. 1A is a schematic cross-sectional view of a display device 10 according to an embodiment of the invention. FIG. 1B is a schematic top view of the substrate structure SS1 in the display device 10 of FIG. 1A . Fig. 1C is a schematic cross-sectional view taken along the section line A-A' of Fig. 1B. FIG. 2A is a schematic top view of a substrate structure SS2 according to an embodiment of the invention. Fig. 2B is a schematic cross-sectional view taken along the section line B-B' of Fig. 2A. FIG. 3 is a schematic top view of a substrate structure SS3 according to an embodiment of the invention. FIG. 4 is a schematic top view of a substrate structure SS4 according to an embodiment of the invention. FIG. 5A is a schematic top view of a substrate structure SS5 according to an embodiment of the invention. Fig. 5B is a schematic cross-sectional view taken along the section line C-C' of Fig. 5A. FIG. 6 is a schematic top view of a substrate structure SS6 according to an embodiment of the invention. FIG. 7 is a schematic cross-sectional view of a substrate structure SS7 according to an embodiment of the invention. FIG. 8 is a schematic cross-sectional view of a display device 20 according to an embodiment of the invention. FIG. 9 is a schematic cross-sectional view of a display device 30 according to an embodiment of the invention.

10: Display device

110: flexible layer

120: flexible layer

130: Patterned support layer

140: Display component layer

150: Wafer bonding layer

AO: anti-oxidation layer

CT: color conversion layer

CV: Through hole conductive structure

DC: drive element

E1, E2: electrodes

LD: light emitting element

SL: seed layer

SS1: Substrate structure

TA: switching element array

VA: through hole

W1, W2: Wire

Claims (15)

A display device comprising: a first flexible layer; a second flexible layer located on the first flexible layer; a first patterned support layer, located between the first flexible layer and the second flexible layer, and has a plurality of openings; an auxiliary supporting material is arranged in the openings; a through-hole conductive structure passing through the first flexible layer, the second flexible layer, and the first patterned support layer; a display element layer located on the second flexible layer; and A chip bonding layer, wherein the first flexible layer is located between the second flexible layer and the chip bonding layer, and the chip bonding layer is electrically connected to the display element layer through the through hole conductive structure. The display device according to claim 1, wherein the material of the first flexible layer and the second flexible layer includes polyimide, polycarbonate, polyester, cycloolefin copolymer, or metal chromium Material - cycloolefin copolymer. The display device according to claim 1, wherein the first patterned support layer has a mesh or stripe pattern. The display device as claimed in claim 1, wherein the first patterned supporting layer comprises metal. The display device according to claim 1, wherein the auxiliary support material includes silicon oxide, silicon nitride, acrylic, siloxane, polyimide, or epoxy resin. The display device as claimed in claim 1, wherein the display element layer includes a switch element array, and the switch element array is electrically connected to the chip bonding layer. The display device according to claim 1, wherein the first patterned support layer has a disconnection gap, and the disconnection gap is adjacent to the via conductive structure. The display device as claimed in claim 7, wherein the disconnection gap surrounds the via conductive structure. The display device according to claim 1, further comprising a first barrier layer located between the first flexible layer and the first patterned support layer. The display device according to claim 9, further comprising a second barrier layer located between the second flexible layer and the first patterned support layer. The display device according to claim 1, further comprising a third flexible layer located between the first flexible layer and the chip bonding layer. The display device according to claim 11, further comprising a second patterned support layer located between the third flexible layer and the first flexible layer. The display device as claimed in claim 12, wherein the second patterned supporting layer comprises metal. The display device according to claim 1, further comprising a printed circuit board located between the first flexible layer and the chip bonding layer. The display device according to claim 14, further comprising an adhesive layer located between the first flexible layer and the printed circuit board.

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