TW202238659A - Insulation window, control method thereof and plasma processing device - Google Patents

Abstract

According to the insulation window, the control method thereof and the plasma processing device, the heating device and the semiconductor cooler are arranged on the insulation window, uniform control over the temperature of the insulation window is achieved, the semiconductor cooler can effectively reduce the temperature of the center of the window, and in addition, the semiconductor cooler can achieve the dual functions of heating and cooling.

Description

Insulating window, temperature control method thereof, and plasma processing device

The invention relates to the technical field of plasma etching, in particular to the technical field of an insulating window used for plasma etching.

For plasma etching technology, the technology is to input process gas into the reaction chamber, and the RF source is inductively or capacitively coupled to the reaction chamber to excite the process gas to form and maintain plasma. Inside the reaction chamber, the wafer is supported by the substrate While exposed to process gases, etching is achieved. Among them, Inductive Coupled Plasma (Inductive Coupled Plasma, ICP) is a common technology. In this technology, an insulating window, such as a ceramic window, is covered on the upper part of the reaction chamber, and coils are arranged on the upper part of the insulating window.

As the processing precision of the wafer becomes higher and higher, the requirements for the uniformity of the temperature of the ceramic window are also higher and higher.

In the conventional technology, in order to ensure the uniformity of the temperature of the ceramic window, it is necessary to control the temperature of the ceramic window to prevent the temperature difference of the ceramic window from affecting the uniformity of the wafer surface. The known temperature control method is to paste a heating device on the ceramic window, and install a fan above the ceramic window for cooling, so as to realize heating and cooling of the ceramic window. However, during the etching process, the heat of the plasma will heat the central part of the ceramic window intensively, and it is difficult to achieve accurate cooling of the ceramic window only by using a fan. Therefore, there is an urgent need for a solution to meet the temperature uniformity requirements of the ceramic window.

In order to solve the above technical problems, the present invention provides an insulating window for a plasma processing device, comprising: a window body having an inner region and an outer region surrounding at least a part of the inner region; a temperature control device comprising A heating device and a zone temperature control device; the heating device is at least located in the outer area of the window body; the zone temperature control device is located in the inner area of the window body, wherein the zone temperature control device is a semiconductor refrigerator, the A peltier is used to heat the window body prior to plasma generation.

Preferably, the semiconductor refrigerator is also used to cool the window body when the plasma is generated.

Preferably, the heating device is approximately annularly distributed and forms at least one ring, and the semiconductor refrigerator is approximately annularly distributed and forms at least one ring; wherein, the power density of the heating device is along the diameter of the window main body The direction decreases from the outer area to the inner area, and the power density of the area temperature control device increases from the outer area to the inner area along the radial direction of the window body.

Preferably, semiconductor refrigerators and heating devices are arranged alternately along the circumferential direction in the inner region.

Preferably, the heating device is a heating patch, and a heating wire is sandwiched between the heating patch; the heating wire has a short bending part and a long bending part, and the short bending part and the long bending part The parts are arranged alternately in the circumferential direction of the window main body and connected to each other to form a roughly first heating ring; wherein, the long bent parts extend along the radial direction of the window main body to the inner area.

Preferably, the part of the long bent portion extending toward the center along the radial direction of the window body extends to near the center of the window body in the inner region.

Preferably, the short bending part is formed by at least one short bending unit, and the long bending part is formed by at least one long bending unit.

Preferably, the heating device further includes a second heating ring, the second heating ring is adjacent to the first heating ring and is located on a side of the first heating ring close to the inner region.

Preferably, the second heating ring is a heating patch with a heating wire interposed therebetween, and the heating wire has a short bend and a long bend, and the short bend and the long bend are on the window The main bodies are alternately arranged in the circumferential direction and connected to each other to form a roughly second heating ring; wherein, the long bent portion extends along the radial direction of the window main body to the inner area.

Preferably, the semiconductor refrigerator includes a first semiconductor refrigerator, and the first semiconductor refrigerator includes a plurality of refrigeration units, the refrigeration units are square, fan-shaped or ring-shaped, and the refrigeration units form a roughly first ring shape.

Preferably, the semiconductor refrigerator includes a first semiconductor refrigerator, the first semiconductor refrigerator includes a plurality of refrigeration units, the refrigeration units are square or fan-shaped, and the refrigeration units form a roughly first ring shape, The refrigerating unit and the part extending toward the inner area of the long bent part are arranged alternately.

Preferably, the semiconductor refrigerator further includes a second semiconductor refrigerator, the second semiconductor refrigerator includes a plurality of refrigeration units, the refrigeration units are square or fan-shaped, and the plurality of refrigeration units form a roughly second The second ring is adjacent to the first ring and is located on the side of the first ring away from the inner area; and the power density of the second semiconductor refrigerator is smaller than that of the first semiconductor refrigerator.

Preferably, the temperature control device further includes a cooling device, and the cooling device is a plurality of fan elements; wherein, the cooling device is arranged on the opposite side of the outer surface of the insulating window.

Preferably, the heating wire is single or multiple that can be separately and independently controlled.

Further, the present invention also discloses a plasma processing device, comprising a reaction chamber and the above-mentioned insulating window with a temperature control device, and the insulating window is arranged on the upper part of the reaction chamber.

Further, the present invention also discloses a method for temperature control of the above-mentioned insulating window with a temperature control device, including: a preheating step, before the plasma is generated, separately controlling the heating device and the zone temperature control device to heat; As well as the temperature control step, when the plasma is generated, the heating device is respectively controlled to heat, and the regional temperature control device is cooled.

The advantage of the present invention is that: the present invention provides an insulating window with a temperature control device, its temperature control method, and a plasma processing device, and the insulating window can be realized by arranging a ring-shaped heating device and a regional temperature control device on the insulating window. Temperature uniformity, the regional temperature control device uses a semiconductor refrigerator, which has the characteristics of fast temperature response, and can achieve the purpose of quickly cooling the center of the insulating window. Not only that, the semiconductor refrigerator can realize the heating function only by reversing the electrodes, which can The plasma is preheated prior to plasma generation.

In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments It is a part of embodiments of the present invention, but not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art of the present invention without making progressive changes shall fall within the protection scope of the present invention.

Fig. 1 shows a schematic diagram of an inductively coupled plasma processing device. The processing device 100 includes a vacuumable reaction chamber 106 surrounded by an outer wall 101. The reaction chamber 106 is used to process a substrate 112, wherein the substrate 112 is placed On the base 110, the base 110 is supported by the base 111; the outer wall 101 is provided with an air inlet 105, and the process gas source 107 is connected to the air inlet 105 through a pipeline 108A, and then input into the reaction chamber 106, and the whole chamber is passed through the pump 104 to realize negative pressure; an insulating window 200 is set on the top of the reaction chamber 100, and the outer surface of the insulating window 200 is provided with a temperature control device 210, wherein the outer surface refers to the opposite side of the insulating window 200 to the inner surface facing the reaction chamber 106; To be specific, the temperature control device 210 can also be arranged on the interlayer or the inner surface of the insulating window 200; an inductance coil 108 is also arranged above the outer surface of the temperature control device 210, and the inductance coil 108 is connected to the RF source 109 for generating plasma; A cooling device 220 is also provided above the outer surface of the insulating window 200 for cooling the insulating window 200 , and the cooling device 220 is composed of a plurality of fan elements 221 .

Fig. 2 shows a schematic structural view of an insulating window 200. The insulating window 200 has a window body. The specific shape of 200 varies according to the shape of the top of the reaction chamber; the window body of the insulating window 200 has a center 201, an inner region 303 and an outer region 301 surrounding the inner region 303, wherein the inner region 303 is located at the center of the insulating window 200 Near 201 , when plasma is generated, it will gather near the center 201 (that is, the inner region 303 ), thereby intensively heating the inner region 303 of the insulating window 200 , resulting in a higher temperature of the inner region 303 than the outer region 301 .

In order to solve the temperature uniformity problem, the outer surface of the insulating window 200 is provided with a temperature control device 210, the temperature control device 210 includes a heating device and a zone temperature control device, and the heating device is located in the outer area 301 of the window main body, or The outer area 301 and the inner area 303 are used to heat the insulating window 200 during preheating and to control the temperature of the insulating window 200 when plasma is generated; the area temperature control device is located in the inner area 303 of the window body ( That is, when the plasma is generated, the plasma is heated intensively, resulting in a region with a higher temperature), so as to heat the insulating window 200 during preheating and cool down the inner region 303 of the insulating window 200 when the plasma is generated. Among them, the regional temperature control device is a semiconductor refrigerator, and the semiconductor refrigerator has the function of reversing the two poles to realize the switching between heating and cooling, which facilitates the conversion of different requirements for preheating and temperature control steps.

Both the heating device and the regional temperature control device are arranged in a roughly circular pattern. Since the circular pattern is roughly arranged along the circumference of the window body of the insulating window 200, the advantage of this arrangement is that the temperature along the circumferential direction of the insulating window 200 It is uniform; the approximate ring is not necessarily a strict ring, it can be a ring, it can also be a C-shaped, dot-and-dash line-shaped ring formed by multiple segments, or the overall arrangement tends to be ring-shaped.

Specifically, the heating devices are distributed approximately in a ring shape and form at least one ring, each ring is substantially concentrically nested, the heating device is located in the outer area 301, or the outer area 301 and the inner area 303, and the power density of each ring is set to be along the The radial direction of the window body decreases from the outer region 301 to the inner region 303, which can ensure the uniformity of the radial heating temperature of the window body.

Specifically, the regional temperature control devices are distributed approximately in a ring shape and form at least one ring, and each ring is roughly nested concentrically. The regional temperature control device is located in the inner region 303. When the plasma is generated, the temperature of the inner region 303 increases along the radial direction. The temperature is higher toward the center 201, so the power density of each ring is set to gradually increase from the outer region 301 to the inner region 303 along the radial direction of the window body, which can ensure the uniformity of the radial temperature of the window body. Among them, the change of the power density is realized by the change of the arrangement density, and it can also be controlled by the magnitude of the current.

For a preferred embodiment, the specific arrangement of the temperature control device 210 is shown in FIG. 3 . The insulating window 200 has a gas inlet 202 arranged at the center 201 . The heating device is a heating patch, and a heating wire 400 is interposed in the middle of the heating patch; the heating wire 400 has a short bending part 401 and a long bending part 402, and the short bending part 401 and the long bending part The folded parts 402 are arranged alternately in the circumferential direction of the window body and are connected to each other to form a roughly first heating ring 405; wherein, the long bent parts 402 extend toward the inner region 303 along the radial direction of the window main body, and the long bent parts 402 The part extending to the inner area 303 may extend to the vicinity of the center 201, as shown in FIG. to the junction of the outer area 301 and the inner area 303 (as shown in FIG. 7 ).

Referring to FIG. 4 , the short bending part 401 includes a plurality of short bending units 410, and each short bending unit 410 includes a radial side 411, an inner peripheral side 413, a radial side 411 and an outer peripheral side 412 connected in sequence. , the two radial sides 411 have the same length and extend along the radial direction;

The long bending part 402 includes a plurality of long bending units 420, and each long bending unit 420 includes a radial side 421, an inner peripheral side 423, a radial side 421 and an outer peripheral side 422 connected in sequence. The sides 421 have approximately the same length and extend along the radial direction; the outer circumferential side 422 and the inner circumferential side 423 extend along the circumferential direction and the length of the outer circumferential side 422 is greater than the inner circumferential side 423; wherein, the diameter of the long bending unit 420 The length of the side 421 is greater than the length of the radial side 411 of the short bending unit 410 , so that the difference in radial length helps to control the power density of the heating device to decrease along the radial direction toward the inner region 303 .

It can be seen from FIG. 3 that the first heating ring 405 is not strictly ring-shaped, but the overall arrangement tends to be ring-shaped, and is electrically connected to an external control device through the interface 403 to realize temperature control of the first heating ring 405 . The number of short bending units 410 in the short bending part 401 is greater than the number of long bending units 420 in the long bending part 402. Such a ratio of numbers also helps to control the power density of the heating device to the inner area along the radial direction. 303 direction decreases.

Referring to accompanying drawing 3, the semiconductive refrigerator comprises a first semiconductive refrigerator 501, and the first semiconductive refrigerator 501 is arranged in the internal area 303, and the first semiconductive refrigerator 501 comprises a plurality of refrigeration units 505, and the refrigeration units 505 The arrangement forms a roughly first ring shape. When the extended portion of the long bent portion 402 extends to the inner area 303 , the extended portion and the refrigeration unit 505 are arranged alternately in the circumferential direction, so that the temperature of the local area can be controlled more effectively.

Certainly, the peltier cooler may be composed of multiple rings, and FIG. 5 shows another embodiment, although FIG. 5 only shows two rings, without limitation, it may also be multiple rings. The semiconductor refrigerator also includes a second semiconductor refrigerator 502, the first semiconductor refrigerator 501 and the second semiconductor refrigerator 502 are both arranged in the inner area 303, and the second semiconductor refrigerator 502 includes a plurality of refrigeration units, so The plurality of refrigerating units form a substantially second ring, the second ring is adjacent to the first ring, and is located on the side of the first ring away from the center 201; and the power density of the second semiconductor refrigerator 502 is smaller than that of the first ring. The power density of a semiconductor refrigerator 501 can be seen from FIG. 5 , and the variation of the power density can be controlled by the number of refrigeration units 505 .

Regarding the form of the refrigeration unit 505, the refrigeration units 505 shown in Figures 3 and 5 are all sheet-shaped, specifically square, fan-shaped, circular or other sheet-shaped, or even a combination of several shapes, such as Figure 6 As shown, the first semiconductor refrigerator 501 is fan-shaped, and the second semiconductor refrigerator 502 is square.

As mentioned above, the extended part of the long bent part 402 extends to the inner area 303 and is close to the center 201, and the extended part is alternately arranged with the semiconductor refrigerator; FIG. 7 shows that the extended part does not extend to the center 201 When the extension part does not extend to the vicinity of the center 201, the extension part can only be arranged alternately with several rings of the semiconductor refrigerator away from the center 201 in the circumferential direction, while several rings of the semiconductor refrigerator close to the center 201 are not connected with the extension part. Alternately arranged in the circumferential direction; even, when the extension part extends very short, the extension part does not alternate with any ring of the semiconductor refrigerator in the circumferential direction. Alternately, the cooling unit 505 can be ring-shaped, and the ring-shaped cooling unit can avoid temperature unevenness caused by uneven arrangement of sheet cooling units.

Accompanying drawing 8 shows another arrangement option of semiconductor refrigerators. The first semiconductor refrigerator 501 is square, and it can also be preferably square, circular and other sheet shapes. The advantage of this is that the temperature in the area where each refrigeration unit is located can be precisely controlled. . Among them, the first semiconductor refrigerator 501 has 15 refrigeration units and is arranged in a ring along the circumferential direction. The distance between two adjacent refrigeration units is the same, and the equidistant arrangement ensures the uniformity of circumferential temperature control. The second The semiconductor refrigerator 502 has 10 refrigeration units, which are also arranged in a circular equidistant manner along the circumferential direction. The number of the first semiconductor refrigerator 501 is greater than the number of the semiconductor refrigerator 502, thereby ensuring that the power density changes during cooling. Increase along the radial direction toward the center 201; the first semiconductor refrigerator 501 has a radial refrigeration unit 5051 that continues to extend toward the center along the extension of the long bent portion 402, and the second semiconductor refrigerator 502 also has a The extended part of the long bent part 402 continues to extend toward the radial refrigeration unit 5052 in the direction of the center. The radial refrigeration units 5051 and 5052 contribute to the uniformity of the heating temperature during the preheating step, that is, when the refrigeration unit switches to the heating mode , not only that, in the preheating step, when the refrigeration unit is switched to the heating mode, in order to ensure that the heating power density decreases radially toward the center, not all the refrigeration units need to work. Taking Figure 8 as an example, the preheating When it is hot, the refrigerating unit of the second semiconductor refrigerator 502 works or partially works, but the refrigeration unit of the first semiconductor refrigerator 501 only partially works or does not work at all, for example, the second semiconductor refrigerator 502 works completely, and the first semiconductor refrigerator Only 5 refrigeration units in the refrigerator 501 work, and these 5 refrigeration units are selected to be evenly spaced to ensure uniformity of temperature. Preferably, during the preheating step, when the refrigeration unit is switched to the heating mode, the refrigeration unit can also all work, that is, the first semiconductor refrigerator 501 and the second semiconductor refrigerator 502 all work, so as to speed up the preheating speed. Of course, the number of refrigeration units is not limited by the drawings, which are only for convenience of description.

Accompanying drawing 9 shows another arrangement option of the heating device and the zone temperature control device. It can be seen from accompanying drawing 8: there is a blank area 302 between the heating device and the area temperature control device, and the blank area 302 has only the extension of the long bent part 402, so when heating, in the radial direction from the outer area 301 to The inner region 303 will produce a temperature jump. In order to prevent the temperature jump, a second heating ring 406 is also provided between the first heating ring 405 and the semiconductor refrigerator; the second heating ring 406 can be selected from the first heating ring 405 in the same arrangement, the accompanying drawing 9 does not specifically show the arrangement of the second heating ring, which is preferred, but according to the above description, the second heating ring 406 includes a heating wire, and the heating wire has a short bend A bent portion and a long bent portion, the short bent portion and the long bent portion are arranged alternately in the circumferential direction of the window main body and connected to each other to form a roughly second heating ring; wherein the long bent portion is along the window main body The radial direction extends toward the inner region 303, and the part where the long bent part extends toward the inner region 303 may or may not extend to the vicinity of the center 201; the extended part of the second heating ring 406 and the first heating ring 405 The extended parts are arranged in parallel along the radial direction.

In addition, the second heating ring 406 may also only include short bent parts, and the short bent parts are arranged along the circumferential direction and arranged between the extension parts of two adjacent first heating rings 405; for the second heating The specific arrangement of the rings 406 is not limited, but it needs to ensure that the power density of the first heating ring 405 and the second heating ring 406 decreases radially toward the center.

Although the temperature jump can be improved by setting the second heating ring 406, it is preferable to improve this problem by other means, such as increasing the number of long bending units of the first heating ring 405, as shown in the accompanying drawings 9 shows that there are 5 long bending units, which can be improved from 5 to 8.

Figure 10 shows another arrangement option of heating means and zone temperature control means. The first heating ring 405' is arranged in a ring shape along the circumferential direction only by the short bending part; Arranged in a ring in the circumferential direction; as another alternative, the arrangement of the second heating ring 406 ′ can be the same as that of the first heating ring 405 in FIG. 9 .

In accompanying drawings 9-10, the figure only shows a ring formed by a first semiconductor refrigerator. According to the embodiment described above, the semiconductor refrigerator inside the second heating ring 406, 406' may include a first The two rings formed by the peltier cooler and the second peltier cooler may even include a plurality of approximate ring shapes as required.

Figure 11 shows a schematic diagram of the arrangement of the heating wires, and the difference from the accompanying drawing 6 is that the heating wire 400 has multiple interfaces 403, and the multiple interfaces 403 can divide the heating wire 400 into multiple pieces, which helps to control the heating wires 400 respectively, This enables zoned heating.

For better cooling, referring to FIG. 1 , a cooling device 220 is provided above the outer surface of the insulating window 200 to cool down the insulating window 200 while also dissipating heat from the semiconductor refrigerator.

There are also multiple temperature sensors on the insulating window, as well as a control unit (not shown in the figure), the temperature sensors are used to measure the temperature near the heating device and the zone temperature control device, and return the temperature value to the control unit Unit, the control unit controls the heating device and the area temperature control device according to the preset program, which ensures the uniformity of the temperature of the insulating window; for the temperature sensor installed near the area temperature control device, this part of the temperature sensor can also be Integrated in the semiconductor refrigerator, simplifying the installation.

The present invention also discloses the method for controlling the temperature of the insulating window with the temperature control device described above, including the following steps:

(1) In the preheating step, before the plasma is generated, the heating device and the regional temperature control device are respectively controlled to heat. Before the plasma is generated, the insulating window needs to be preheated to prevent the sudden rise in temperature from damaging the insulating window when the plasma is generated. Therefore, it is necessary to switch the semiconductor refrigerator of the regional temperature control device to the heating mode during the preheating step. The power density arrangement of the semiconductor refrigerator of the temperature control device increases radially toward the center, which is opposite to the power density arrangement requirement of the heating device, so only part of the cooling units of the semiconductor refrigerator work during the preheating step, and the working The refrigeration unit and the heating device together conform to the trend that the power density decreases radially toward the center. Preferably, in the preheating step, in order to increase the speed of preheating, all semiconductor refrigerators can also work.

As shown in accompanying drawings 3, 9, and 10, during the preheating step, the refrigerating unit 505 only partially works and switches to heating mode, for example, only 5 refrigerating units 505 work, thereby ensuring that the working refrigerating unit and the heating device work together. Conform to the trend that the power density decreases radially toward the center, and the circumferential spacing between the working refrigeration units 505 is the same, thereby ensuring the uniformity of circumferential heating; as shown in Figure 5, during preheating In the first step, the second semiconductor refrigerator 502 is fully working or only partially working, and the first semiconductor refrigerator 501 is only partially working or not working at all. Whether the refrigeration unit works is related to the specific number of refrigeration units. The refrigeration unit and the heating device jointly conform to the trend that the power density decreases radially toward the center. The number of refrigerating units in the drawings is just a schematic, and the number of refrigerating units is not specifically limited. Similarly, the second semiconductor refrigerator 502 in the accompanying drawings 6-7 is fully or partially working, and the first semiconductor refrigerator 501 is partially or not working, or the power is adjusted by adjusting the current of the first semiconductor refrigerator 501, So as to meet the distribution trend of power density. The working mode in FIG. 8 has been described in detail above, and will not be repeated here. Of course, preferably, in the preheating step, in order to increase the speed of preheating, all semiconductor refrigerators can also work.

(2) In the temperature control step, when the plasma is generated, the heating device is respectively controlled to heat, and the regional temperature control device is cooled. When the plasma is generated, the plasma is concentrated and distributed near the center of the insulating window, causing the temperature of the inner area to be too high. The inner area of the insulating window can be quickly cooled through the area temperature control device to achieve uniform temperature.

Although the content of the present invention has been described in detail through the above preferred embodiments, it should be understood that the above description should not be considered as limiting the present invention. Various modifications and alterations to the present invention will become apparent to those having ordinary skill in the art to which the present invention pertains after reading the above disclosure. Therefore, the protection scope of the present invention should be limited by the scope of the appended patent application.

101: outer wall 104: pump 105: air inlet 106: reaction chamber 107: Process gas source 108: Inductance coil 108A: pipeline 109: RF source 110: Base 111: base 112: Substrate 200: Insulated windows 201: center 202: Gas inlet 210: temperature control device 220: cooling device 221: Fan element 301: Outer area 302: blank area 303: Inner area 400: heating wire 401: short bending part 402: long bending part 403: interface 405, 406': first heating ring 406, 406': second heating ring 410: short bending unit 411: Radial edge of short bending element 412: The outer peripheral edge of the short bending unit 413: The inner peripheral edge of the short bending unit 420: long bending unit 421: Radial edge of long bending element 422: The outer peripheral edge of the long bending unit 423: The inner peripheral edge of the long bending unit 501: The first semiconductor refrigerator 502: The second semiconductor refrigerator 505: Refrigeration unit 5051, 5052: radial cooling unit

In order to more clearly illustrate the technical solutions in the embodiments of the present invention or in the prior art, the following will briefly introduce the accompanying drawings that need to be used in the description of the embodiments or the prior art. Obviously, the accompanying drawings in the following description are only These are some embodiments of the present invention. For those skilled in the art to which the present invention pertains, other drawings can also be obtained based on these drawings without making progressive changes. FIG. 1 shows a schematic structural view of a capacitively coupled plasma processing device; Figure 2 shows a top view of an insulating window structure; Fig. 3 shows a kind of embodiment with insulating window of temperature control device; Figure 4 shows a schematic diagram of a short bending unit and a long bending unit; Fig. 5 shows a kind of another embodiment that has insulating window of temperature control device; Fig. 6 shows a kind of another embodiment that has insulating window of temperature control device; Fig. 7 shows a kind of another embodiment that has insulating window of temperature control device; Fig. 8 shows a kind of another embodiment with insulating window of temperature control device; Fig. 9 shows a kind of another embodiment with insulating window of temperature control device; Figure 10 shows a further embodiment with an insulating window for temperature control means; and Figure 11 shows a schematic diagram of the arrangement of heating wires.

200: Insulated windows

201: center

202: Gas inlet

303: Inner area

400: heating wire

401: short bending part

402: long bending part

403: interface

405: the first heating ring

501: The first semiconductor refrigerator

505: Refrigeration unit

Claims (16)

An insulating window for a plasma processing device, comprising: a window body having an inner region and an outer region surrounding at least a portion of the inner region; and A temperature control device, which includes a heating device and a zone temperature control device; the heating device is located at least in the outer region of the window body; The area temperature control device is located in the inner area of the window body, wherein the area temperature control device is a semiconductor refrigerator, and the semiconductor refrigerator is used to heat the window body before plasma is generated. The insulating window as claimed in claim 1, wherein: the semiconductor refrigerator is also used for cooling the window body when plasma is generated. The insulating window according to claim 2, wherein: the heating device is distributed in a ring and forms at least one ring, and the semiconductor refrigerator is distributed in a ring and forms at least one ring; wherein, the power density of the heating device is along the main body of the window The radial direction of the window body decreases from the outer region to the inner region, and the power density of the temperature control device in the region increases from the outer region to the inner region along the radial direction of the window body. The insulating window as claimed in claim 3, wherein: the peltier coolers and the heating device are arranged alternately along the circumferential direction in the inner region. The insulating window as described in claim 2, wherein: the heating device is a heating patch, and a heating wire is interposed in the middle of the heating patch; the heating wire has a short bending part and a long bending part, and the short The bent portion and the long bent portion are alternately arranged in the circumferential direction of the window main body and connected to each other to form a first heating ring; wherein, the long bent portion extends toward the inner region along the radial direction of the window main body extend. The insulating window as claimed in claim 5, wherein: the long bent portion extends along the radially central portion of the window body to near the center of the window body in the inner region. The insulating window as claimed in claim 5, wherein: the short bending portion is formed by at least one short bending unit, and the long bending portion is formed by at least one long bending unit. The insulating window according to claim 5, wherein: the heating device further includes a second heating ring, the second heating ring is adjacent to the first heating ring, and is located on the side of the first heating ring close to the center. The insulating window as claimed in claim 8, wherein: the second heating ring is a heating patch with a heating wire interposed therebetween, and the heating wire has a short bend and a long bend, and the short bend The second heating ring is formed by alternating portions and the long bent portions in the circumferential direction of the window main body and connected to each other; wherein, the long bent portions extend toward the inner region along the radial direction of the window main body. The insulating window as described in claim 5, wherein: the semiconductor refrigerator includes a first semiconductor refrigerator, and the first semiconductor refrigerator includes a plurality of refrigeration units, the refrigeration units are square, fan-shaped or ring-shaped, and the refrigeration units form of the first ring. The insulating window as described in any one of claims 5, 6, 8 or 9, wherein: the semiconductor refrigerator includes a first semiconductor refrigerator, and the first semiconductor refrigerator includes a plurality of refrigeration units, and the refrigeration units are square Or fan-shaped, the refrigeration unit forms the first ring shape, and the refrigeration unit and the part of the long bent part extending toward the inner area are arranged alternately. The insulating window as described in claim 11, wherein: the semiconductor refrigerator further includes a second semiconductor refrigerator, and the second semiconductor refrigerator includes a plurality of refrigeration units, the refrigeration units are square or fan-shaped, and the plurality of refrigeration units A second ring is formed, the second ring is adjacent to the first ring and is located on the side away from the center of the first ring; and the power density of the second semiconductor refrigerator is smaller than that of the first semiconductor refrigerator power density. The insulating window according to claim 2, wherein: the temperature control device further includes a cooling device, and the cooling device is a plurality of fan elements; wherein, the cooling device is arranged on the opposite side of the outer surface of the insulating window. The insulating window as claimed in claim 5 or 9, wherein: the heating wire is single or multiple that can be separately and independently controlled. A plasma processing device, comprising a reaction chamber and an insulating window according to claims 1-14, the insulating window is arranged on the upper part of the reaction chamber. The method for temperature control of an insulating window as described in claim item 1-14, which includes the following steps: A preheating step, before the plasma is generated, respectively controlling the heating device and the zone temperature control device to heat; and In a temperature control step, when the plasma is generated, the heating device is respectively controlled to heat, and the temperature control device in this area is cooled.

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