TW202231834A - Phosphor particle, luminescence device, image displaying apparatus and method for manufacturing phosphor particle - Google Patents

Phosphor particle, luminescence device, image displaying apparatus and method for manufacturing phosphor particle Download PDF

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TW202231834A
TW202231834A TW110142671A TW110142671A TW202231834A TW 202231834 A TW202231834 A TW 202231834A TW 110142671 A TW110142671 A TW 110142671A TW 110142671 A TW110142671 A TW 110142671A TW 202231834 A TW202231834 A TW 202231834A
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phosphor
light
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豊島広朗
武田雄介
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日商電化股份有限公司
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Abstract

A phosphor particle of the invention has a core composed of a crystalline phosphor having a composition represented by Sr(Li1+x, Al3-x)(O2xN4-2x):Eu(0<x≤2), and the surface of the core is coated with a layer that contains polysiloxane bonds.

Description

螢光體粒子、或其製造方法、發光裝置及圖像顯示裝置Phosphor particles, method for producing the same, light-emitting device, and image display device

本發明係關於螢光體粒子、螢光體粒子之製造方法、發光裝置及圖像顯示裝置。The present invention relates to phosphor particles, a method for producing the phosphor particles, a light-emitting device, and an image display device.

近年來,液晶顯示器、照明用途之LED係強烈地要求顏色再現性高,因此期望盡可能為發出發光峰部之半峰全幅值窄的光之螢光體。例如液晶顯示器用途之白色LED,係需要發出發光峰部之半峰全幅值窄之光之綠色螢光體或紅色螢光體,近年有人報告滿足如此要求之發出具有半峰全幅值窄之發光峰部之光之窄帶綠色螢光體、窄帶紅色螢光體。此外,在要求高亮度之照明用途中,需要發出發光峰部之半峰全幅值窄之光之窄帶黃色螢光體。In recent years, since high color reproducibility has been strongly demanded for LEDs for liquid crystal displays and lighting applications, phosphors that emit light with as narrow a full width at half maximum of an emission peak portion as possible are desired. For example, white LEDs used in liquid crystal displays need to emit green phosphors or red phosphors that emit light with a narrow full-width at half-maximum at the luminous peak. Narrow-band green phosphors and narrow-band red phosphors of light at the luminous peak. In addition, in lighting applications requiring high brightness, a narrow-band yellow phosphor that emits light with a narrow full-width at half maximum at the luminous peak portion is required.

就窄帶綠色螢光體之例子而言,已知將β型矽鋁氮氧化物作為母體結晶,並將其以Eu原子活化而得之綠色之螢光體,亦即β型矽鋁氮氧化物螢光體(參照專利文獻1,本說明書中,將如上述β型矽鋁氮氧化物般之結晶稱為「螢光體母體結晶」。有時亦簡稱為「母體結晶」。)。已知β型矽鋁氮氧化物螢光體藉由在維持結晶結構之狀態下使氧含量變化,而使發光峰部波長朝向更短波長側移位(例如,參照專利文獻2)。此外,已知若將β型矽鋁氮氧化物以Ce原子活化,則會成為發出藍色的光之螢光體(例如,參照專利文獻3)。此外,作為窄帶紅色螢光體之一例,已知將SrLiAl 3N 4作為螢光體母體結晶,並對於其以Eu原子活化而得之螢光體(參照非專利文獻1)。 As an example of a narrow-band green phosphor, a green phosphor obtained by activating β-type silicon-aluminum oxynitride as a parent crystal and activating it with Eu atoms is known, that is, β-type silicon-aluminum oxynitride. Phosphor (refer to Patent Document 1, in this specification, a crystal such as the above-mentioned β-type silico-aluminum oxynitride is referred to as a "phosphor parent crystal". It is also abbreviated as a "parent crystal" in some cases). It is known that the β-type silicon aluminum oxynitride phosphor changes the oxygen content while maintaining the crystal structure, so that the wavelength of the emission peak portion is shifted to the shorter wavelength side (for example, refer to Patent Document 2). In addition, it is known that when β-type silicon-aluminum oxynitride is activated with Ce atoms, it becomes a phosphor that emits blue light (for example, refer to Patent Document 3). In addition, as an example of a narrow-band red phosphor, a phosphor obtained by crystallizing SrLiAl 3 N 4 as a phosphor precursor and activating it with Eu atoms is known (see Non-Patent Document 1).

此處將如Eu原子、Ce原子般之掌管發光的原子稱為活化原子。一般而言,活化原子在螢光體中係以離子之狀態存在,且為取代螢光體母體結晶中之原子之一部分而存在。Here, atoms that control light emission such as Eu atoms and Ce atoms are referred to as activated atoms. Generally speaking, the activated atoms exist in the state of ions in the phosphor, and exist to replace a part of the atoms in the phosphor precursor crystal.

因此螢光體係藉由螢光體母體結晶與對其進行取代之活化原子之組合來決定發光色。並且,藉由螢光體母體結晶與活化原子之組合,會決定發光光譜、激發光譜等發光特性、化學穩定性、或是熱穩定性,故螢光體母體結晶不同之情形,或活化原子不同之情形,係視為不同的螢光體。此外,即使化學組成相同,若螢光體母體結晶之結晶結構不同的話,則因為則發光特性或化學穩定性不同,故視為不同的螢光體。Therefore, the fluorescent system determines the luminescent color by the combination of the phosphor precursor crystal and the activated atoms that replace it. In addition, the combination of phosphor matrix crystals and activated atoms will determine the luminescence spectrum, excitation spectrum and other luminescence characteristics, chemical stability, or thermal stability, so the situation of different phosphor matrix crystals or activated atoms are different. In this case, it is regarded as a different phosphor. In addition, even if the chemical composition is the same, if the crystal structure of the phosphor precursor crystals is different, the luminescent properties and chemical stability are different, so they are regarded as different phosphors.

另一方面,螢光體對於外部環境係不穩定,故為了防止隨著時間推移之惡化,已知會將螢光體以其他的無機物被覆。例如,專利文獻4揭示,對於以Eu aSr bLiAl cN d(0<a≦0.2、0.8≦b≦1.2、2.4≦c≦3.6、3.2≦d≦4.8)作為螢光體母體結晶並且經Eu原子活化而得之螢光體,形成含有由矽原子與氧原子形成之化合物之被覆膜之技術。 [先前技術文獻] [專利文獻] On the other hand, since the phosphor is unstable to the external environment, it is known to coat the phosphor with other inorganic substances in order to prevent deterioration over time. For example, Patent Document 4 discloses that when Eu a Sr b LiAl c N d (0<a≦0.2, 0.8≦b≦1.2, 2.4≦c≦3.6, 3.2≦d≦4.8) is used as the phosphor matrix crystal and A technique for forming a coating film containing a compound formed of silicon atoms and oxygen atoms in phosphors obtained by activating Eu atoms. [Prior Art Literature] [Patent Literature]

專利文獻1:日本特開2005-255895號公報 專利文獻2:國際公開第2007/066733號 專利文獻3:國際公開第2006/101096號 專利文獻4:日本特開2017-214516號公報 [非專利文獻] Patent Document 1: Japanese Patent Laid-Open No. 2005-255895 Patent Document 2: International Publication No. 2007/066733 Patent Document 3: International Publication No. 2006/101096 Patent Document 4: Japanese Patent Laid-Open No. 2017-214516 [Non-patent literature]

非專利文獻1:NATURE MATERIALS VOL.13 SEPTEMBER 2014Non-Patent Document 1: NATURE MATERIALS VOL. 13 SEPTEMBER 2014

[發明所欲解決之課題][The problem to be solved by the invention]

螢光體之隨著時間推移之惡化之中,耐濕性、耐水性從螢光體之品質維持來看係為重要。近年來,對於LED(light emitting diode)之品質改善之要求逐漸提高,要求耐濕性、耐水性等之耐久性更進一步地改善。Among the deterioration of the phosphor over time, moisture resistance and water resistance are important in terms of maintaining the quality of the phosphor. In recent years, the requirements for quality improvement of LEDs (light emitting diodes) have gradually increased, and durability such as moisture resistance and water resistance are required to be further improved.

另一方面,如上述般藉由螢光體母體結晶與活化原子之組合,會決定發光光譜、激發光譜等發光特性,故維持螢光體個別之發光特性同時提高耐久性之手法,亦取決於其螢光體母體結晶而各異。On the other hand, as described above, the luminescence characteristics such as the luminescence spectrum and excitation spectrum are determined by the combination of the phosphor matrix crystal and the activated atoms. Therefore, the method of maintaining the individual luminescence characteristics of the phosphor and improving the durability also depends on The phosphor precursor crystals vary.

因此,本案發明人再次著眼於與專利文獻4揭示之結晶結構之螢光體之母體結晶為不同的結晶結構之螢光體,在具有Sr(Li 1+x,Al 3-x)(O 2xN 4-2x):Eu(0<X≦2)表示之組成之螢光體中,從解決維持發光特性同時提高耐久性之新課題之觀點進行潛心研究,乃至完成本發明。 [解決課題之手段] Therefore, the inventors of the present application once again focused on a phosphor having a crystal structure different from the parent crystal of the phosphor having the crystal structure disclosed in Patent Document 4 . N 4-2x ):Eu (0<X≦2) represents the phosphor of the composition, from the viewpoint of solving the new problem of maintaining light-emitting characteristics and improving durability, made intensive research, and even completed the present invention. [Means of Solving Problems]

根據本發明,可提供一種螢光體粒子,係將具有Sr(Li 1+x,Al 3-x)(O 2xN 4-2x):Eu(0<X≦2)表示之組成之螢光體之結晶相作為核心, 且該核心之表面係藉由具有聚矽氧烷鍵之層被覆。 According to the present invention, a phosphor particle can be provided, which is a phosphor having a composition represented by Sr(Li 1+x ,Al 3-x )(O 2x N 4-2x ):Eu(0<X≦2) The crystalline phase of the bulk acts as a core, and the surface of the core is covered by a layer having polysiloxane bonds.

此外,根據本發明,可提供具備上述螢光體粒子、及發光光源之發光裝置。Further, according to the present invention, a light-emitting device including the above-described phosphor particles and a light-emitting light source can be provided.

此外,根據本發明,可提供使用了上述發光裝置之圖像顯示裝置。Furthermore, according to the present invention, an image display device using the above-described light-emitting device can be provided.

此外,根據本發明,可提供一種螢光體粒子之製造方法,具有將Sr(Li 1+x,Al 3-x)(O 2xN 4-2x):Eu(0<X≦2)表示之組成之螢光體之結晶相作為核心,在該核心之表面形成具有聚矽氧烷鍵之層之步驟。 [發明之效果] In addition, according to the present invention, there can be provided a method for producing phosphor particles having the ability to represent Sr(Li 1+x ,Al 3-x )(O 2x N 4-2x ):Eu(0<X≦2) A step of forming a layer having a polysiloxane bond on the surface of the crystalline phase of the composed phosphor as a core. [Effect of invention]

根據本發明,可提供有關維持發光特性的同時耐久性提升之螢光體粒子之技術。According to the present invention, it is possible to provide a technique for phosphor particles having improved durability while maintaining light-emitting properties.

以下,針對本發明之實施形態詳細地進行說明。此外,本說明書中,在數值範圍的說明中「a~b」之記載,除非另有說明,係表示a以上b以下。Hereinafter, embodiments of the present invention will be described in detail. In addition, in this specification, the description of "a to b" in the description of the numerical range means that a or more and b or less, unless otherwise specified.

此外,圖示僅為說明用。圖示中的各構件之形狀、尺寸比等並不一定會對應現實的物品。In addition, the drawings are for illustrative purposes only. The shapes and size ratios of the components shown in the illustrations do not necessarily correspond to real objects.

<1.螢光體粒子> 本實施形態之螢光體粒子,係將Sr(Li 1+x,Al 3-x)(O 2xN 4-2x):Eu(0<X≦2)表示之組成之螢光體之結晶相作為核心,該核心之表面係藉由具有聚矽氧烷鍵之層被覆。藉此,能夠維持發光特性同時改善耐濕性、耐水性等耐久性。 <1. Phosphor particles> The phosphor particles of the present embodiment are represented by Sr(Li 1+x ,Al 3-x )(O 2x N 4-2x ):Eu (0<X≦2) The crystalline phase of the composed phosphor serves as a core, and the surface of the core is covered by a layer having polysiloxane bonds. Thereby, durability, such as moisture resistance and water resistance, can be improved while maintaining light emission characteristics.

另外,在本實施形態之螢光體粒子中,藉由具有聚矽氧烷鍵之層所為之表面之被覆,不限於連續的狀態,亦可以是一部分為非連續的狀態。換句話說,可以是具有聚矽氧烷鍵之層(亦稱為被覆層)以覆蓋核心之表面全體之方式而形成,此外,亦可以是被覆層的至少一部分在核心之表面形成島狀。 此外本實施形態之具有聚矽氧烷鍵之層,係藉由使用有機矽化合物而得之層。即,有機矽化合物,之後會形成含有聚矽氧烷鍵之化合物。 此外,被覆層,可以是其全體為具有聚矽氧烷鍵之化合物之微粒之連續帶,亦可以是其一部分為具有聚矽氧烷鍵之化合物之微粒之連續帶。 例如,可以是在核心之表面全體的10~90%之區域形成被覆層。 此外,被覆層為具有聚矽氧烷鍵之化合物之微粒時,其粒徑(D50)並無特別限制,但例如亦可以是螢光體粒子之粒徑(D50)的1~30%。 In addition, in the phosphor particle of the present embodiment, the coating of the surface by the layer having a polysiloxane bond is not limited to a continuous state, and a part may be a discontinuous state. In other words, a layer having a polysiloxane bond (also referred to as a coating layer) may be formed so as to cover the entire surface of the core, and at least a part of the coating layer may be formed in an island shape on the surface of the core. In addition, the layer having a polysiloxane bond in this embodiment is a layer obtained by using an organosilicon compound. That is, an organosilicon compound, and then a compound containing a polysiloxane bond is formed. In addition, the coating layer may be a continuous band in which the entirety is composed of fine particles of a compound having a polysiloxane bond, or a portion of which is a continuous band of fine particles of a compound having a polysiloxane bond. For example, the coating layer may be formed in an area of 10 to 90% of the entire surface of the core. In addition, when the coating layer is a particle of a compound having a polysiloxane bond, the particle size (D50) thereof is not particularly limited, but may be, for example, 1 to 30% of the particle size (D50) of the phosphor particles.

本實施形態之螢光體粒子,宜為發光峰部波長為550~600nm,半峰全幅值為70nm以下。藉此,可得到高亮度之窄帶黃色螢光體。In the phosphor particles of the present embodiment, the wavelength of the emission peak is preferably 550 to 600 nm, and the full width at half maximum is 70 nm or less. Thereby, a narrow-band yellow phosphor with high brightness can be obtained.

本實施形態之螢光體粒子之粒徑(D10),以1~50μm為佳,以5~40μm為較佳,以10~30μm為更佳。 本實施形態之螢光體粒子之粒徑(D50),以1~100μm為佳,以10~90μm為較佳,以30~80μm為更佳,以40~70μm為更佳。 本實施形態之螢光體粒子之粒徑(D90),以30~200μm為佳,以80~180μm為較佳,以100~150μm為更佳。 另外,在本實施形態中,例如,粒徑(D50),意指由雷射繞射散射法所為之體積基準的積算分率中相當於累積至50%之粒徑。 The particle size (D10) of the phosphor particles of the present embodiment is preferably 1-50 μm, more preferably 5-40 μm, and more preferably 10-30 μm. The particle size (D50) of the phosphor particles of this embodiment is preferably 1-100 μm, more preferably 10-90 μm, more preferably 30-80 μm, and more preferably 40-70 μm. The particle size (D90) of the phosphor particles of the present embodiment is preferably 30-200 μm, more preferably 80-180 μm, and more preferably 100-150 μm. In addition, in this embodiment, for example, the particle diameter (D50) means the particle diameter equivalent to 50% of the integrated fraction of the volume based on the laser diffraction scattering method.

本實施形態之螢光體粒子之Si原子之含量(質量%),以0~4質量%為佳,以0.05~2質量%為較佳,以0.1~1.5質量%為更佳。 另外,Si原子之含量(質量%),在螢光體粒子之製造方法中,能夠藉由調整進料時的有機矽化合物之量,調整被覆處理時的溫度、時間、或溶劑之種類等來調控。 The content (mass %) of Si atoms in the phosphor particles of the present embodiment is preferably 0 to 4 mass %, more preferably 0.05 to 2 mass %, and more preferably 0.1 to 1.5 mass %. In addition, the content (mass %) of Si atoms can be adjusted by adjusting the amount of the organosilicon compound at the time of feeding, and by adjusting the temperature, time, or the type of solvent at the time of coating treatment in the method for producing phosphor particles. regulation.

另外,Si原子之含量(質量%)之測定,能夠藉由製備將螢光體粒子完全溶解在鹼性溶劑(Na 2CO 3、K 2CO 3與H 3BO 3之混合物)中之試驗液,並由ICP(高頻感應偶合電漿)發光分析法來進行。 In addition, the content (mass %) of Si atoms can be measured by preparing a test solution in which the phosphor particles are completely dissolved in an alkaline solvent (mixture of Na 2 CO 3 , K 2 CO 3 and H 3 BO 3 ). , and carried out by ICP (high frequency induction coupled plasma) luminescence analysis method.

本實施形態之螢光體粒子宜為滿足以下條件。藉此,螢光體粒子之耐久性會改善。 條件:在溫度50℃、相對溼度80%之環境下保存7小時後之螢光體粒子之外部量子粒子效率,相對於在該環境下保存前之上述螢光體粒子之外部量子粒子效率為30%以上。 The phosphor particles of the present embodiment preferably satisfy the following conditions. Thereby, the durability of the phosphor particles can be improved. Condition: The external quantum particle efficiency of the phosphor particles after being stored in an environment with a temperature of 50°C and a relative humidity of 80% for 7 hours is 30 relative to the external quantum particle efficiency of the phosphor particles before storage in this environment. %above.

以下,針對構成本實施形態之螢光體粒子之核心及被覆層進行說明。Hereinafter, the core and the coating layer constituting the phosphor particles of the present embodiment will be described.

[核心] 本實施形態之螢光體粒子中,核心意指由具有Sr(Li 1+x,Al 3-x)(O 2xN 4-2x):Eu(0<X≦2)表示之組成之螢光體之結晶相所構成。該螢光體,為Sr原子的至少一部分係被作為活化物質之Eu原子取代而得之Eu活化螢光體,可使用本案申請人之日本特願2019-118166揭示之結晶相之螢光體。 [Core] In the phosphor particles of the present embodiment, the core means a composition represented by Sr(Li 1+x ,Al 3-x )(O 2x N 4-2x ):Eu(0<X≦2) It is composed of the crystalline phase of the phosphor. This phosphor is an Eu-activated phosphor obtained by substituting at least a part of Sr atoms with Eu atoms as an activating substance, and the phosphor of the crystal phase disclosed in Japanese Patent Application No. 2019-118166 of the applicant of the present application can be used.

另外,本案發明人們從各自含有Sr原子、Li原子、Al原子及O原子之原料物質,合成組成式以SrLi 3AlO 4表示之物質,並進行了潛心研究。結果發現該合成物質並非混合物,藉由其結晶結構解析,判定係以SrLi 3AlO 4作為單元,且是具有在本發明以前未曾報告過的結晶結構之單一的化合物。此外,確認了不僅是SrLi 3AlO 4結晶,即使其一部分或全部的原子以其他特定之原子取代,仍可維持與SrLi 3AlO 4結晶相同的結晶結構。此外,亦確認了此等之一系列的物質係具有Sr(Li 1+x,Al 3-x)(O 2xN 4-2x)(0<X≦2)表示之組成。 In addition, the inventors of the present application have made intensive studies to synthesize a substance represented by a composition formula of SrLi 3 AlO 4 from raw material substances each containing Sr atom, Li atom, Al atom and O atom. As a result, it was found that the synthetic substance was not a mixture, and by analyzing the crystal structure, it was determined that it was a single compound with SrLi 3 AlO 4 as a unit and having a crystal structure not reported before the present invention. In addition, it was confirmed that not only the SrLi 3 AlO 4 crystal but also some or all of its atoms were substituted with other specific atoms, and the same crystal structure as that of the SrLi 3 AlO 4 crystal was maintained. In addition, it was confirmed that one of these series of substances has a composition represented by Sr(Li 1+x , Al 3-x )(O 2x N 4-2x ) (0<X≦2).

並且,確認了具有Sr(Li 1+x,Al 3-x)(O 2xN 4-2x)(0<X≦2)表示之組成之結晶之Sr原子的至少一部分係取代為Eu原子,即使關於具有通式:Sr(Li 1+x,Al 3-x)(O 2xN 4-2x):Eu(0<X≦2)表示之組成之結晶,亦會維持與具有Sr(Li 1+x,Al 3-x)(O 2xN 4-2x)(0<X≦2)表示之組成之結晶相同的結晶結構,而且會進行螢光發光。 Furthermore, it was confirmed that at least a part of the Sr atoms of the crystal having the composition represented by Sr(Li 1+x ,Al 3-x )(O 2x N 4-2x ) (0<X≦2) was substituted with Eu atoms, even if Regarding the crystal with the general formula: Sr(Li 1+x ,Al 3-x )(O 2x N 4-2x ): Eu(0<X≦2), the crystal will also maintain the same composition as Sr(Li 1+ x , Al 3-x )(O 2x N 4-2x )(0<X≦2) has the same crystal structure as the crystals of the composition, and can emit fluorescent light.

表1中,表示關於SrLi 3AlO 4結晶之X射線結晶結構解析之結果。關於該SrLi 3AlO 4結晶之製作方法係於後續說明。 In Table 1, the results of the X-ray crystal structure analysis of the SrLi 3 AlO 4 crystal are shown. The preparation method of the SrLi 3 AlO 4 crystal will be described later.

[表1]

Figure 02_image001
[Table 1]
Figure 02_image001

表1中,晶格常數a、b、c表示SrLi 3AlO 4結晶之單位晶格之軸的長度,α、β、γ表示單位晶格之軸間之角度。此外,表1中之原子座標x、y、z,係將單位晶格中各原子之位置表示成以單位晶格作為單位之從0至1之間的值。該結晶中,得到表示存在有Sr原子、Li原子、Al原子、O原子之各原子,且Sr原子存在有2種類相同的格位(Sr(1)至Sr(2))之解析結果。此外,得到表示Li原子及Al原子,係存在有7種類相同的格位(Li,Al(1)至Li,Al(7))之解析結果。得到表示Li原子,係存在有1種類相同的格位(Li(8))之解析結果。並且,得到表示O原子,係存在有8種類相同的格位之解析結果。 In Table 1, the lattice constants a, b, and c represent the lengths of the axes of the unit cells of the SrLi 3 AlO 4 crystal, and α, β, and γ represent the angles between the axes of the unit cells. In addition, the atomic coordinates x, y, and z in Table 1 represent the position of each atom in the unit cell as a value from 0 to 1 in the unit cell. In this crystal, an analysis result was obtained indicating that each atom of Sr atom, Li atom, Al atom, and O atom exists, and the Sr atom has two identical sites (Sr(1) to Sr(2)). In addition, an analysis result was obtained indicating that Li atoms and Al atoms exist, and that there are seven types of the same lattice sites (Li, Al(1) to Li, Al(7)). An analysis result was obtained indicating that Li atoms exist and that there is one site of the same type (Li(8)). Furthermore, an analysis result indicating that there are 8 identical lattice sites of O atoms was obtained.

圖1表示SrLi 3AlO 4結晶之結晶結構。圖1中,1係位於四面體之頂點之O原子。2係位於四面體之間的Sr原子。3係中心為Al原子之AlO 4四面體。4係中心為Li原子之LiO 4四面體。即,SrLi 3AlO 4結晶係屬於三斜晶系,且屬於P-1空間群(International Tables for Crystallography之2號之空間群)。另外,在該結晶中,作為負責發光之所謂活化原子的Eu原子,係以取代Sr原子之一部分之形式而被納入至結晶中。 Fig. 1 shows the crystal structure of the SrLi 3 AlO 4 crystal. In Figure 1, 1 is the O atom located at the vertex of the tetrahedron. The 2 series are Sr atoms located between the tetrahedra. The center of the 3 series is the AlO 4 tetrahedron of the Al atom. The center of the 4 series is the LiO 4 tetrahedron of the Li atom. That is, the SrLi 3 AlO 4 crystal system belongs to the triclinic crystal system, and belongs to the P-1 space group (space group No. 2 of International Tables for Crystallography). In addition, in this crystal, Eu atoms, which are so-called active atoms responsible for light emission, are incorporated into the crystal by substituting a part of Sr atoms.

以上的結果在發現本發明之螢光體以前,並非為公知的技術資訊,即,組成式為Sr(Li 1+x,Al 3-x)(O 2xN 4-2x)(0<X≦2)表示之結晶(螢光體母體結晶)之Sr原子之至少一部分取代為Eu原子之本實施形態之螢光體係新穎的螢光體。 The above results are not known technical information until the phosphor of the present invention is discovered, that is, the composition formula is Sr(Li 1+x ,Al 3-x )(O 2x N 4-2x ) (0<X≦ 2) A novel phosphor of the present embodiment in which at least a part of Sr atoms of the indicated crystal (phosphor precursor crystal) is substituted with Eu atoms.

又,具有組成式為Sr(Li 1+x,Al 3-x)(O 2xN 4-2x)(0<X≦2)表示之組成之結晶,即將SrLi 3AlO 4結晶之原子之一部分或全部以其他的原子取代,或如後述般將Eu原子作為活化原子並更進一步取代而得之結晶,其晶格常數和表1所示之SrLi 3AlO 4結晶之晶格常數不同。但是,於如此結晶中基本的結晶結構、原子所占的格位,以及取決於其座標而被賦予的原子位置,並沒有大幅變化以至於骨架原子彼此之間之化學鍵會切斷之程度,其結晶結構沒有變化。 In addition, a crystal having a composition represented by the composition formula Sr(Li 1+x ,Al 3-x )(O 2x N 4-2x ) (0<X≦2) is a part of the atoms of the SrLi 3 AlO 4 crystal or The crystals obtained by substituting all other atoms, or by further substituting Eu atoms as active atoms as described later, have different lattice constants from those of the SrLi 3 AlO 4 crystals shown in Table 1. However, in such a crystal, the basic crystal structure, the lattice positions occupied by atoms, and the atomic positions assigned depending on their coordinates do not change so much that the chemical bonds between the skeleton atoms are severed. The crystalline structure did not change.

即,上述「不僅是上述SrLi 3AlO 4結晶,即使其一部分或全部之原子以其他特定之原子取代,仍可維持與SrLi 3AlO 4結晶相同的結晶結構」,意指:針對組成式為具有Sr(Li 1+x,Al 3-x)(O 2xN 4-2x)(0<X≦2)表示之組成之結晶,由將X射線繞射或中子射線繞射之結果,以P-1之空間群進行裏特沃爾德(Rietveld)解析求得之晶格常數、及原子座標計算而得之Al原子-O原子間及Li原子-O原子間之化學鍵之長度(接近原子間的距離),與上述表1所示之由SrLi 3AlO 4結晶之晶格常數及原子座標計算而得之化學鍵之長度相比較,係滿足±5%以內。此時,實驗上可確認若化學鍵之長度變化超過±5%,則化學鍵會切斷而成為別的結晶。 That is, the above-mentioned "not only the above - mentioned SrLi3AlO4 crystal, but even if some or all of its atoms are substituted with other specific atoms, can still maintain the same crystal structure as that of the SrLi3AlO4 crystal" means: for the composition formula , it has The crystal with the composition represented by Sr(Li 1+x ,Al 3-x )(O 2x N 4-2x )(0<X≦2) is determined by the result of X-ray diffraction or neutron ray diffraction, with P The lattice constant obtained by Rietveld analysis and the atomic coordinate calculation for the space group of -1 are the lengths of the chemical bonds between Al atom-O atoms and between Li atoms and O atoms (close to the length of the chemical bonds between atoms) Compared with the chemical bond length calculated from the lattice constant and atomic coordinates of the SrLi 3 AlO 4 crystal shown in Table 1 above, it is within ±5%. At this time, it has been confirmed experimentally that when the change in the length of the chemical bond exceeds ±5%, the chemical bond is cut and another crystal is formed.

本實施形態之具有Sr(Li 1+x,Al 3-x)(O 2xN 4-2x)(0<X≦2)表示之組成之結晶中,例如在圖1所示之SrLi 3AlO 4結晶中,以M之記號表示之原子可進入Sr原子進入之格位;以L、A之記號表示之原子可各別進入Li原子及Al原子進入之格位;以X之記號表示之原子可進入O原子進入之格位。根據該規則性,可維持SrLi 3AlO 4結晶之結晶結構,且成為相對於M為1,L與A之合計為4,X合計為4之原子數目之比。此外,Eu原子可進入Sr原子進入之格位。但是,期望以M、L、A表示之原子及Eu原子顯示之正電荷之合計、與X表示之原子所顯示之負電荷之合計係相互抵銷,維持結晶整體之電中性。 In the crystal having the composition represented by Sr(Li 1+x , Al 3-x )(O 2x N 4-2x ) (0<X≦2) of the present embodiment, for example, SrLi 3 AlO 4 shown in FIG. 1 In the crystal, the atoms represented by the symbol M can enter the lattice sites where the Sr atom enters; the atoms represented by the symbols L and A can enter the lattice sites where the Li atom and the Al atom respectively enter; the atoms represented by the symbol X can enter the lattice sites. Enter the lattice site where the O atom enters. According to this regularity, the crystal structure of the SrLi 3 AlO 4 crystal can be maintained, and the ratio of the number of atoms of M is 1, the sum of L and A is 4, and the sum of X is 4. In addition, Eu atoms can enter sites where Sr atoms enter. However, it is desirable that the sum of the positive charges shown by the atoms represented by M, L, and A and the Eu atoms and the sum of the negative charges shown by the atoms represented by X cancel each other out to maintain the electrical neutrality of the entire crystal.

圖2中表示從SrLi 3AlO 4結晶之結晶結構基於表1所示之數值計算而得之使用了CuKα射線之粉末X射線繞射之峰部圖案。 FIG. 2 shows the peak pattern of powder X-ray diffraction using CuKα rays calculated from the crystal structure of the SrLi 3 AlO 4 crystal based on the numerical values shown in Table 1. FIG.

另外,就結晶結構為未知的結晶是否具有與上述SrLi 3AlO 4結晶相同的結晶結構之簡便的判定方法而言,使用下述方法較理想。即,關於作為判定對象之結晶結構為未知的結晶,經測定得之X射線繞射峰部之位置(2θ)、及圖2所示之繞射之峰值位置,在針對主要峰部為一致時,兩者之結晶結構相同,即,係判定結晶結構為未知之結晶之結晶結構係與SrLi 3AlO 4結晶為相同的結晶結構之方法。就主要峰部而言,以約10個繞射強度強的峰部來判定即可。在本實施形態中,於實施例使用該判定方法。 In addition, as a simple method for determining whether or not a crystal whose crystal structure is unknown has the same crystal structure as the above-mentioned SrLi 3 AlO 4 crystal, the following method is preferably used. That is, for a crystal whose crystal structure to be determined is unknown, the measured X-ray diffraction peak position (2θ) and the diffraction peak position shown in FIG. 2 are consistent with respect to the main peak. , the crystal structure of the two is the same, that is, it is a method for determining that the crystal structure of the crystal structure of the unknown crystal is the same as the crystal structure of the SrLi 3 AlO 4 crystal. The main peak portion may be determined by approximately 10 peak portions with strong diffraction intensity. In the present embodiment, this determination method is used in the examples.

如上述,本實施形態之螢光體係以具有Sr(Li 1+x,Al 3-x)(O 2xN 4-2x)(0<X≦2)表示之組成之螢光體母體結晶之至少一部分之M以Eu原子取代而得之螢光體,L係一部分或全部為Li原子,A係一部分或全部為選自Al原子、Ga原子及Si原子中1種類或2種類以上之原子,X係選自O原子及N原子中1種類或2種類之原子(但是,排除X僅為N原子)。 As described above, the phosphor system of the present embodiment has at least the phosphor precursor crystal having the composition represented by Sr(Li 1+x ,Al 3-x )(O 2x N 4-2x ) (0<X≦2) A phosphor obtained by substituting a part of M with Eu atoms, L is a part or all of Li atoms, A is a part or all of one or more atoms selected from Al atoms, Ga atoms and Si atoms, X It is an atom selected from one type or two types of O atom and N atom (however, X is only N atom excluding).

於此,在習知的螢光體之製造中,若使用含有N原子之原料物質即氮化物,則可製造含有少量來自該原料物質之O原子之螢光體。但是,本實施形態中,於後述,可使用含有O原子之原料物質即氧化物來製造螢光體。該製造方法中使用之原料物質,不僅限於氧化物,亦可含有氮化物,並非只是氮化物。因此,具有Sr(Li 1+x,Al 3-x)(O 2xN 4-2x)(0<X≦2)表示之組成之螢光體母體結晶之X不會全部取代為N原子。 Here, in the production of a conventional phosphor, if a nitride, which is a raw material material containing N atoms, is used, a phosphor containing a small amount of O atoms derived from the raw material material can be produced. However, in this embodiment, as will be described later, a phosphor can be produced using an oxide which is a raw material material containing O atoms. The raw material used in this production method is not limited to oxides, but may also contain nitrides, not only nitrides. Therefore, X in the phosphor precursor crystal having the composition represented by Sr(Li 1+x , Al 3-x )(O 2x N 4-2x ) (0<X≦2) is not substituted with all N atoms.

此外,本實施形態之螢光體中,螢光體母體結晶亦可為屬於三斜晶系,且具有空間群P-1對稱性之結晶。In addition, in the phosphor of the present embodiment, the phosphor precursor crystal may be a crystal belonging to the triclinic system and having space group P-1 symmetry.

並且本實施形態之螢光體宜為以組成式Sr eLi fAl gO h1N h2Eu i表示,組成比e、f、g、h1、h2及i滿足以下所示之關係式。 e+f+g+h1+h2+i=9、 0<e<1.3、 0.7≦f≦3.3、 0.7≦g≦3.3、 3.7≦h1+h2≦4.3(但是h1>0) 0<i<1.3、及 0.7≦e+i≦1.3 據認為藉由以成為如此之組成比,螢光體母體結晶會穩定產生,可得到發光強度更高的螢光體。 In addition, the phosphor of the present embodiment is preferably represented by the composition formula Sre Li f Al g O h1 N h2 Eu i , and the composition ratios e , f, g, h1, h2 and i satisfy the relational expressions shown below. e+f+g+h1+h2+i=9, 0<e<1.3, 0.7≦f≦3.3, 0.7≦g≦3.3, 3.7≦h1+h2≦4.3 (but h1>0) 0<i<1.3 , and 0.7≦e+i≦1.3 It is considered that by having such a composition ratio, the phosphor precursor crystals are stably generated, and a phosphor having a higher luminous intensity can be obtained.

上述組成比e係表示Sr原子之組成比率的參數,若未達1.3,則結晶結構會變得穩定可抑制發光強度之降低。上述組成比f係表示Li原子之組成比率的參數,若為0.7以上且3.3以下,則結晶結構穩定,可抑制發光強度之降低。上述組成比g係表示Al原子之組成比率的參數,若為0.7以上且3.3以下,則結晶結構穩定,可抑制發光強度之降低。上述組成比h1、h2,係各自表示O原子及N原子之組成比率的參數,若h1+h2為3.7以上且4.3以下(但是h1>0),則螢光體之結晶結構穩定,可抑制發光強度之降低。上述組成比i係表示Eu原子之組成比率的參數,若i超過0,則可抑制活化原子不足所致之亮度之降低。另外,若i未達1.3,則足以維持螢光體母體結晶之結構。若i為1.3以上,有時有螢光體母體結晶之結構會變得不穩定。此外,並且若i未達1.3,可抑制由於活化原子彼此之間之交互作用引起的濃度消光現象所致之發光強度之降低,故較為理想。The above-mentioned composition ratio e is a parameter representing the composition ratio of Sr atoms, and if the composition ratio e is less than 1.3, the crystal structure becomes stable and the decrease in emission intensity can be suppressed. The above-mentioned composition ratio f is a parameter representing the composition ratio of Li atoms, and when the composition ratio f is 0.7 or more and 3.3 or less, the crystal structure is stabilized and the reduction in emission intensity can be suppressed. The above-mentioned composition ratio g is a parameter representing the composition ratio of Al atoms, and when it is 0.7 or more and 3.3 or less, the crystal structure is stabilized, and the reduction in emission intensity can be suppressed. The above-mentioned composition ratios h1 and h2 are parameters representing the composition ratios of O atoms and N atoms, respectively. If h1+h2 is 3.7 or more and 4.3 or less (however, h1>0), the crystal structure of the phosphor is stable and light emission can be suppressed. Decreased strength. The above-mentioned composition ratio i is a parameter representing the composition ratio of Eu atoms, and when i exceeds 0, the decrease in luminance due to the shortage of activated atoms can be suppressed. In addition, if i is less than 1.3, it is sufficient to maintain the structure of the phosphor precursor crystal. When i is 1.3 or more, the structure of the phosphor matrix crystal may become unstable. In addition, when i is less than 1.3, the reduction of the emission intensity due to the concentration extinction phenomenon caused by the interaction between the activated atoms can be suppressed, which is preferable.

並且,據認為上述組成比f及g為 7/40≦g/(f+g)<30/40 之螢光體係結晶結構為穩定,尤其是發光強度高,而較為理想。 In addition, it is considered that the above-mentioned composition ratios f and g are 7/40≦g/(f+g)<30/40 The crystal structure of the fluorescent system is stable, especially the luminous intensity is high, which is ideal.

此外,據認為上述組成比h1及h2為0<h1/(h1+h2)≦1之螢光體係結晶結構會更加穩定,發光強度高,而較為理想。In addition, it is considered that the above-mentioned composition ratios h1 and h2 are 0<h1/(h1+h2)≦1, the crystal structure of the fluorescent system is more stable and the luminous intensity is high, which is preferable.

此外,本實施形態之螢光體,例如若照射在250~500nm之波長範圍內包含光強度峰部之光,則可發出在430~670nm之波長範圍內包含發光峰部之螢光。In addition, the phosphor of the present embodiment can emit fluorescence including a light emission peak in the wavelength range of 430 to 670 nm when irradiated with light including a light intensity peak in the wavelength range of 250 to 500 nm, for example.

特宜為,若照射上述在波長250~500nm之波長範圍內包含發光峰部之光,則可發出在560~580nm之波長範圍內包含發光峰部之螢光。In particular, when the above-mentioned light including an emission peak in the wavelength range of 250 to 500 nm is irradiated, fluorescence including an emission peak in the wavelength range of 560 to 580 nm can be emitted.

本實施形態之螢光體,係對於上述螢光體母體結晶,以Eu原子作為活化原子進行了取代之螢光體。含有Eu原子作為活化原子之螢光體,為發光強度高的螢光體,藉由特定的組成,可得到發出在430~670nm之波長範圍內包含發光峰部之藍色至紅色之螢光的螢光體。The phosphor of the present embodiment is a phosphor in which the above-mentioned phosphor precursor crystal is substituted with Eu atoms as active atoms. Phosphors containing Eu atoms as activated atoms are phosphors with high luminescence intensity. With a specific composition, blue to red fluorescence including emission peaks in the wavelength range of 430 to 670 nm can be obtained. phosphor.

尤其宜為,本實施形態之螢光體,亦為能以組成式Sr 1-rLi 3-qAl 1+qO 4-2qN 2qEu r表示,且參數q及r為 0≦q<2、及 0<r<1 之螢光體。以上述組成式表示之螢光體,係在維持穩定的結晶結構之狀態下,藉由適當地調整q及r之參數之值,而使Eu原子/Sr原子比、Li原子/Al原子比、N原子/O原子比變化,可使螢光體之激發峰部波長及發光峰部波長連續性地變化。 In particular, the phosphor of this embodiment can also be represented by the composition formula Sr 1-r Li 3-q Al 1+q O 4-2q N 2q Eu r , and the parameters q and r are 0≦q< 2. and 0<r<1 phosphors. The phosphor represented by the above composition formula is in the state of maintaining a stable crystal structure, by appropriately adjusting the values of the parameters of q and r, so that the ratio of Eu atom/Sr atom, Li atom/Al atom ratio, By changing the N atom/O atom ratio, the excitation peak wavelength and the emission peak wavelength of the phosphor can be continuously changed.

藉由螢光體之發光峰部波長變化,在受激發光照射時發光的顏色,就CIE1931色度座標上之(x,y)的值,例如可為0≦x≦0.8、0≦y≦0.9之範圍。如此之螢光體,由於可以發出藍色至紅色的光,例如適宜用來作為白色LED用之螢光體。By changing the wavelength of the light emission peak of the phosphor, the color of light emitted when irradiated with excitation light, the value of (x, y) on the CIE1931 chromaticity coordinate can be, for example, 0≦x≦0.8, 0≦y≦ 0.9 range. Since such a phosphor can emit blue to red light, it is suitable to be used as a phosphor for white LEDs, for example.

另外,本實施形態之螢光體,係例如吸收激發源具有100~500nm之波長的真空紫外線、紫外線、可見光、或放射線具有的能量而發光之螢光體。放射線可舉例例如X射線、伽碼射線、α射線、β射線、電子射線、中子射線,並無特別限制。藉由使用此等激發源,能夠有效率地使本實施形態之螢光體發光。In addition, the phosphor of the present embodiment is, for example, a phosphor that emits light by absorbing the energy of vacuum ultraviolet rays, ultraviolet rays, visible light, or radiation having a wavelength of 100 to 500 nm in the excitation source. Examples of radiation include X-rays, gamma rays, alpha rays, beta rays, electron rays, and neutron rays, and are not particularly limited. By using these excitation sources, the phosphor of the present embodiment can be efficiently made to emit light.

此外,在激發光之波長為380nm~450nm時,欲控制使發光峰部波長為550~650nm,宜為550~630nm,較宜為550~590nm時,上述參數q及r宜為滿足q=0,及0<r<0.05。In addition, when the wavelength of the excitation light is 380 nm to 450 nm, the wavelength of the emission peak should be controlled to be 550 to 650 nm, preferably 550 to 630 nm, more preferably 550 to 590 nm, and the above parameters q and r should satisfy q=0 , and 0<r<0.05.

本實施形態之螢光體,宜為本實施形態之螢光體之單結晶之粒子、或本實施形態之螢光體之單結晶之粒子凝聚而得之凝聚物,或是它們的混合物。本實施形態之螢光體,期望盡可能為純度高,就螢光體以外的物質而言,例如不可避免地含有之螢光體以外的雜質,只要不損害螢光體之發光,亦可含有此等物質。The phosphor of the present embodiment is preferably the particle of the single crystal of the phosphor of the present embodiment, or the aggregate obtained by agglomerating the particles of the single crystal of the phosphor of the present embodiment, or a mixture thereof. The phosphor of this embodiment is desirably as high in purity as possible. Substances other than the phosphor, such as impurities other than the phosphor that are inevitably contained, may also be included as long as the light emission of the phosphor is not impaired. such substances.

例如,原料物質、煅燒容器中含有的Fe原子、Co原子及Ni原子之雜質原子,有使螢光體之發光強度降低之虞。此情形下,藉由使螢光體中含有的雜質原子之合計量為500ppm以下,對螢光體之發光強度降低之影響會減少。For example, the impurity atoms of Fe atoms, Co atoms, and Ni atoms contained in the raw material and the calcination container may reduce the luminous intensity of the phosphor. In this case, by making the total amount of impurity atoms contained in the phosphor to be 500 ppm or less, the influence on the decrease in the luminous intensity of the phosphor can be reduced.

此外,若製造本實施形態之螢光體,可能同時產生具有螢光體以外的其他的結晶相、非晶質相(亦稱為副相)之化合物。副相,並不一定具有與本實施形態之螢光體相同組成。本實施形態之螢光體,盡可能不含有副相較佳,但在不損害螢光體之發光之範圍內,亦可含有副相。In addition, when the phosphor of the present embodiment is produced, a compound having a crystal phase other than the phosphor and an amorphous phase (also referred to as a sub-phase) may be simultaneously produced. The secondary phase does not necessarily have the same composition as the phosphor of this embodiment. The phosphor of the present embodiment preferably does not contain a secondary phase as much as possible, but it may also contain a secondary phase within the range that does not impair the light emission of the phosphor.

即,作為實施形態之螢光體之態樣之一,係將具有上述以Sr(Li 1+x,Al 3-x)(O 2xN 4-2x)(0<X≦2)表示之組成之結晶作為螢光體母體結晶並對其以Eu原子(活化原子)為離子的狀態進行了取代之化合物、及具有與上述化合物不同的副相等之化合物的混合物;前者的化合物之含量,相對於本實施形態之螢光體全部量,為50質量%以上。 That is, as one aspect of the phosphor of the embodiment, it will have the above-mentioned composition represented by Sr(Li 1+x ,Al 3-x )(O 2x N 4-2x ) (0<X≦2) A mixture of a compound in which the crystal is used as a phosphor parent crystal and substituted with an Eu atom (activated atom) as an ion, and a compound having a sub-equivalent different from the above-mentioned compound; the content of the former compound is relative to The total amount of the phosphor in this embodiment is 50% by mass or more.

僅為具有以Sr(Li 1+x,Al 3-x)(O 2xN 4-2x)(0<X≦2)表示之組成之結晶之單質無法得到目的之特性時,亦可使用上述態樣。具有Sr(Li 1+x,Al 3-x)(O 2xN 4-2x)(0<X≦2)表示之組成之螢光體母體結晶之含量,可依據目的之特性進行調整,只要成為20質量%以上,螢光體之發光強度會充分地提高。由如此之觀點來看,在本實施形態之螢光體中,宜為20質量%以上作為上述化合物。若為如此之螢光體,藉由照射激發源則可得到發出在400~670nm之範圍內之波長具有發光峰部之螢光。 The above state can also be used when only the simple substance of the crystal having the composition represented by Sr(Li 1+x ,Al 3-x )(O 2x N 4-2x ) (0<X≦2) cannot obtain the desired properties Sample. The content of the phosphor precursor crystal having the composition represented by Sr(Li 1+x ,Al 3-x )(O 2x N 4-2x )(0<X≦2) can be adjusted according to the characteristics of the purpose, as long as it becomes 20% by mass or more, the luminous intensity of the phosphor will be sufficiently improved. From such a viewpoint, in the phosphor of the present embodiment, it is preferable to use 20% by mass or more as the above-mentioned compound. In the case of such a phosphor, by irradiating the excitation source, fluorescence having an emission peak at a wavelength in the range of 400 to 670 nm can be obtained.

此外,針對本實施形態之核心的形狀並無特別限制,使用螢光體粒子作為經分散的粒子時,例如,宜為平均粒徑為0.1~50μm之單結晶之粒子、或是單結晶之粒子凝聚(集合)而成之凝聚物。具有調控為該範圍之粒徑之核心之螢光體粒子,發光效率高,安裝在LED時之操作性佳。上述平均粒徑係藉由JIS Z8825(2013)確定,為從使用將雷射繞射散射法作為測定原理之粒度分布測定裝置所測定之粒度分布(累積分布)計算得出之體積基準之粒徑(D50)。此外,可將本實施形態之核心(螢光體)再次進行煅燒並以非粒子之形狀使用。特別是含有螢光體之板狀之燒結體,一般而言亦稱為螢光體板,例如能適宜地作為發光元件之發光構件使用。In addition, the shape of the core of the present embodiment is not particularly limited. When phosphor particles are used as dispersed particles, for example, single crystal particles with an average particle diameter of 0.1 to 50 μm, or single crystal particles are preferred. Agglomerates formed by agglomeration (aggregation). The phosphor particles with the core controlled to the particle size in this range have high luminous efficiency and good operability when installed in LEDs. The above-mentioned average particle diameter is determined by JIS Z8825 (2013), and is the volume-based particle diameter calculated from the particle size distribution (cumulative distribution) measured by the particle size distribution measuring apparatus using the laser diffraction scattering method as the measurement principle. (D50). In addition, the core (phosphor) of this embodiment can be fired again and used in a non-particle form. In particular, a plate-shaped sintered body containing a phosphor is also generally referred to as a phosphor plate, and can be suitably used, for example, as a light-emitting member of a light-emitting element.

[被覆層(具有聚矽氧烷鍵之層)] 本實施形態之被覆層,係將核心的至少一部分予以被覆的層。被覆層並無特別限制,可因應目的適當地選擇,就維持螢光特性的同時有效地賦予高耐久性之觀點來看,宜使用有機矽化合物而成。藉由使用有機矽化合物,因加熱處理等產生水解、脫水縮合反應,能夠在形成聚矽氧烷鍵的同時形成被覆層。此外,有機矽化合物較宜使用具有Si-O鍵之有機矽化合物。 上述有機矽化合物,例如,可舉例選自由四乙氧矽烷(TEOS)、四甲氧矽烷(TMOS)、甲基三乙氧矽烷(MeTEOS)、及苯基三乙氧矽烷(PhTEOS)構成之群組中之1種或2種以上。其中,就可穩定地形成被覆層之觀點來看,更宜為四乙氧矽烷(TEOS)。 [Coating layer (layer with polysiloxane bond)] The coating layer of the present embodiment is a layer that coats at least a part of the core. The coating layer is not particularly limited, and can be appropriately selected according to the purpose, but it is preferable to use an organosilicon compound from the viewpoint of effectively imparting high durability while maintaining the fluorescent characteristics. By using an organosilicon compound, hydrolysis and dehydration condensation reactions occur due to heat treatment or the like, so that a coating layer can be formed simultaneously with the formation of polysiloxane bonds. In addition, as the organosilicon compound, an organosilicon compound having a Si—O bond is preferably used. The above-mentioned organosilicon compound, for example, can be selected from the group consisting of tetraethoxysilane (TEOS), tetramethoxysilane (TMOS), methyltriethoxysilane (MeTEOS), and phenyltriethoxysilane (PhTEOS). One or more of the group. Among them, tetraethoxysilane (TEOS) is more suitable from the viewpoint of stably forming the coating layer.

此外,本實施形態之被覆層之平均厚度並無特別限制,例如,以1~200nm為佳,以3~180nm為較佳,以5~100nm為更佳,以10~50nm為再更佳。 平均厚度之測定方法,例如,可舉例藉由掃描式或穿透式電子顯微鏡觀察本實施形態之螢光體粒子之剖面,從在任意的5~20處進行了測定的被覆層之厚度計算得出之方法。此外,其他的測定平均厚度之方法,可舉例假定被覆層係均勻地被覆核心之表面,並從使用了ICP發光分光分析法之元素分析所得之Si分析值、螢光體粒子之比表面積、被覆層之密度計算得出平均厚度之方法等。其中,就可相較下簡便地進行穩定的測定之觀點來看,從使用了ICP發光分光分析法之元素分析所得之Si分析值、及螢光體粒子之比表面積計算得出之方法較為理想。 In addition, the average thickness of the coating layer of the present embodiment is not particularly limited, for example, it is preferably 1-200 nm, more preferably 3-180 nm, more preferably 5-100 nm, and even more preferably 10-50 nm. As a method for measuring the average thickness, for example, the cross section of the phosphor particle of the present embodiment is observed with a scanning or transmission electron microscope, and the thickness of the coating layer measured at arbitrary 5 to 20 positions can be calculated. way out. In addition, other methods for measuring the average thickness can be exemplified by assuming that the coating layer uniformly coats the surface of the core, and analyzing the value of Si obtained by elemental analysis using ICP emission spectrometry, the specific surface area of the phosphor particles, the coating The method of calculating the density of the layer to obtain the average thickness, etc. Among them, from the viewpoint of comparatively simple and stable measurement, the method calculated from the Si analysis value obtained by elemental analysis using ICP emission spectrometry and the specific surface area of the phosphor particles is preferable. .

本實施形態之被覆層之形成方法,可舉例後述螢光體粒子之製造方法中的被覆層形成步驟等。The method of forming the coating layer of the present embodiment includes, for example, the coating layer forming step in the method for producing the phosphor particles described later.

<2.螢光體粒子之製造方法> 針對本實施形態之螢光體粒子之製造方法之一例進行說明。 本實施形態之螢光體粒子至少包含:準備步驟(步驟1),準備作為核心之螢光體;及被覆層形成步驟(步驟2),在核心之表面形成被覆層。以下,針對各步驟進行詳細說明。 <2. Manufacturing method of phosphor particles> An example of the manufacturing method of the phosphor particle of this embodiment is demonstrated. The phosphor particles of this embodiment at least include: a preparation step (step 1) of preparing a phosphor serving as a core; and a coating layer forming step (step 2) of forming a coating layer on the surface of the core. Hereinafter, each step will be described in detail.

[步驟1:準備步驟] 針對準備作為核心之螢光體之步驟進行說明。 首先,將含有Sr原子之原料物質、含有Li原子之原料物質、含有Al原子之原料物質、含有O原子之原料物質、含有N原子之原料物質、及含有Eu原子之原料物質進行混合,而得到原料混合物。另外,當原料物質為化合物時,在1個化合物中可含有Sr原子、Li原子、Al原子、O原子、N原子及Eu原子中之多數的原子,此外,原料物質可以係單質,意即可以係由單獨的原子構成之物質。 [Step 1: Preparation steps] The procedure for preparing the phosphor as the core will be explained. First, a starting material containing Sr atoms, a starting material containing Li atoms, a starting material containing Al atoms, a starting material containing O atoms, a starting material containing N atoms, and a starting material containing Eu atoms are mixed to obtain Raw material mixture. In addition, when the raw material is a compound, one compound may contain many atoms among Sr atoms, Li atoms, Al atoms, O atoms, N atoms, and Eu atoms, and the raw material may be a single substance, which means that it can be A substance made up of individual atoms.

含有Sr原子之原料物質,為選自含有Sr原子之金屬、氧化物、碳酸鹽、氫氧化物、氮氧化物、氮化物、氫化物、氟化物及氯化物中之單質或2種類以上之混合物,具體而言宜使用氧化物。The raw material containing Sr atoms is a simple substance or a mixture of two or more kinds selected from metals containing Sr atoms, oxides, carbonates, hydroxides, nitrogen oxides, nitrides, hydrides, fluorides and chlorides , in particular, oxides are preferably used.

含有Li原子之原料物質,為選自含有Li原子之金屬、氧化物、碳酸鹽、氫氧化物、氮氧化物、氮化物、氫化物、氟化物及氯化物中之單質或2種類以上之混合物,具體而言宜使用氧化物。The raw material containing Li atoms is a simple substance or a mixture of two or more kinds selected from metals containing Li atoms, oxides, carbonates, hydroxides, nitrogen oxides, nitrides, hydrides, fluorides and chlorides , in particular, oxides are preferably used.

含有Al原子之原料物質,為選自含有Al原子之金屬、氧化物、碳酸鹽、氫氧化物、氮氧化物、氮化物、氫化物、氟化物及氯化物中之單質或2種類以上之混合物,具體而言宜使用氧化物。The raw material containing Al atoms is a simple substance or a mixture of two or more kinds selected from metals containing Al atoms, oxides, carbonates, hydroxides, nitrogen oxides, nitrides, hydrides, fluorides and chlorides , in particular, oxides are preferably used.

含有Eu原子之原料物質,為選自含有Eu原子之合金、氧化物、氮化物、氟化物及氯化物中之單質或2種類以上之混合物,具體而言宜使用氧化銪。各原料物質宜為粉末狀。The raw material containing Eu atoms is a single substance or a mixture of two or more kinds selected from alloys containing Eu atoms, oxides, nitrides, fluorides and chlorides, and specifically, europium oxide is preferably used. Each raw material is preferably in powder form.

例如在製造經以Eu原子活化的SrLi 3AlO 4螢光體(結晶)時,宜使用含有Eu原子之氧化物、氮化物、或氟化物、及含有Sr原子之氧化物、氮化物、或氟化物、及含有Li原子之氧化物、氮化物、或氟化物、及含有Al原子之氧化物、氮化物、或氟化物來製成原料混合物。此外,亦可將由Sr原子與Li原子、Sr原子與Al原子、Al原子與Li原子、Sr原子與Li原子與Al原子構成之複合金屬、氧化物、碳酸鹽、氫氧化物、氮氧化物、氮化物、氫化物、氟化物、或氯化物等作為原料物質使用。特別是較宜使用含有Eu原子之氧化物(氧化銪)與含有Sr原子之氧化物(氧化鍶)與含有Li原子之氧化物(氧化鋰)與含有Li原子及Al原子之氧化物(氧化鋰鋁)。 For example, when producing SrLi 3 AlO 4 phosphors (crystals) activated with Eu atoms, oxides, nitrides, or fluorides containing Eu atoms, and oxides, nitrides, or fluorides containing Sr atoms are preferably used Compounds, oxides, nitrides, or fluorides containing Li atoms, and oxides, nitrides, or fluorides containing Al atoms are used to prepare a raw material mixture. In addition, composite metals, oxides, carbonates, hydroxides, nitrogen oxides, oxides, carbonates, hydroxides, nitrogen oxides, Nitride, hydride, fluoride, or chloride or the like is used as the raw material. In particular, oxides containing Eu atoms (europium oxide), oxides containing Sr atoms (strontium oxide), oxides containing Li atoms (lithium oxide), and oxides containing Li atoms and Al atoms (lithium oxide) are preferably used aluminum).

本實施形態之螢光體之製造方法中,在用以合成螢光體之煅燒時,亦可將在煅燒溫度以下之溫度下會產生液相即含有構成螢光體之原子以外的原子之化合物,添加至原料物質中並進行煅燒。如此之產生液相之化合物,由於會作為助熔劑,並發揮促進螢光體之合成反應及晶粒成長之作用。因此,可得到穩定的結晶且改善螢光體之發光強度。In the method for producing a phosphor according to the present embodiment, in the calcination for synthesizing the phosphor, a compound containing atoms other than atoms constituting the phosphor may be formed into a liquid phase at a temperature lower than or equal to the calcination temperature. , added to the raw material and calcined. The compound that generates the liquid phase in this way acts as a flux, and plays a role in promoting the synthesis reaction of the phosphor and the growth of crystal grains. Therefore, stable crystals can be obtained and the luminous intensity of the phosphor can be improved.

上述煅燒溫度以下之溫度下產生液相之化合物中,有含有選自Sr原子、Li原子、及Al原子中之1種類或2種類以上之原子的氟化物、氯化物、碘化物、溴化物及磷酸鹽之1種類或2種類以上之混合物。它們亦可以是含有構成螢光體之原子以外的原子之化合物。此外,此等之化合物由於各自熔點不同,可取決於合成溫度分別使用。此等之產生液相之化合物,於本實施形態中為了方便起見亦係包含在原料物質中。Among the compounds that generate a liquid phase at a temperature below the calcination temperature, there are fluorides, chlorides, iodides, bromides and One type or a mixture of two or more types of phosphates. They may also be compounds containing atoms other than those constituting the phosphor. In addition, since these compounds differ from each other in melting|fusing point, it can be used separately depending on a synthesis temperature. These compounds that generate a liquid phase are also included in the raw material for convenience in this embodiment.

將螢光體製造成粒子或凝聚物時,各原料物質宜為粒子。此外,因為螢光體之合成反應,係從原料物質之粒子彼此之間之接觸部分作為起點而發生,若將原料物質之粒子之平均粒徑設定為500μm以下,則粒子彼此之接觸部分增加而反應性改善,故較為理想。When the phosphor is formed into particles or aggregates, each raw material is preferably particles. In addition, since the synthesis reaction of the phosphor occurs from the contact portion between the particles of the raw material as a starting point, if the average particle size of the particles of the raw material is set to 500 μm or less, the contact portion of the particles increases and The reactivity is improved, so it is ideal.

(混合方法) 本實施形態之螢光體之製造方法中,將各原料物質混合製成原料混合物之方法並無特別限制,可使用公知的混合方法。即,各原料物質以乾式進行混合之方法,除此之外,亦可藉由於與各原料物質實質上不會反應之不活潑的溶劑中經濕式混合後,去除溶劑之方法等來進行混合。另外,混合裝置宜使用V型混合機、搖擺式混合機、球磨機、振動式研磨機等。 (mixed method) In the method for producing the phosphor of the present embodiment, the method of mixing the respective raw materials to obtain a raw material mixture is not particularly limited, and a known mixing method can be used. That is, in addition to the method of mixing each raw material in a dry manner, the mixing may be performed by wet mixing in an inert solvent that does not substantially react with each raw material, followed by a method of removing the solvent, or the like. . In addition, as the mixing device, a V-type mixer, a rocking mixer, a ball mill, a vibrating mill and the like are preferably used.

(煅燒容器) 在原料混合物之煅燒中,作為保持原料混合物之煅燒容器,可使用各種的耐熱性材料之容器,例如,可使用氮化硼燒結體等氮化硼製之容器、氧化鋁燒結體等氧化鋁製之容器、碳燒結體等碳容器、鉬、鎢或鉭等金屬製之容器等。 (calcination vessel) In the calcination of the raw material mixture, as the calcination container for holding the raw material mixture, a container made of various heat-resistant materials can be used. Containers, carbon containers such as carbon sintered bodies, containers made of metals such as molybdenum, tungsten, or tantalum, etc.

(煅燒溫度) 在本實施形態之螢光體之製造方法中,原料混合物之煅燒溫度可適當地設定,例如,可設定為780~1500℃。藉由將煅燒溫度設定為780℃以上,螢光體之結晶成長易於進行,可得到充足的螢光特性。此外,藉由將煅燒溫度設定為1500℃以下,能夠抑制螢光體分解,抑制螢光特性之降低。另外,煅燒時間取決於煅燒溫度而不同,通常為約1~10小時。煅燒中之加熱、溫度維持、隨時間推移而冷卻之模式並無特別限制,此外,在煅燒途中,因應需要亦可追加原料物質。 (calcination temperature) In the method for producing the phosphor of the present embodiment, the firing temperature of the raw material mixture can be appropriately set, for example, 780 to 1500°C. By setting the firing temperature to 780° C. or higher, the crystal growth of the phosphor is facilitated, and sufficient fluorescent properties can be obtained. In addition, by setting the firing temperature to 1500° C. or lower, it is possible to suppress the decomposition of the phosphor and suppress the degradation of the fluorescent properties. In addition, the calcination time varies depending on the calcination temperature, but is usually about 1 to 10 hours. The modes of heating, temperature maintenance, and cooling with time during calcination are not particularly limited, and raw materials may be added as necessary during calcination.

(煅燒環境) 煅燒步驟,宜在原料混合物中之至少一部分之Eu 3+可還原成Eu 2+之狀態之還原性的煅燒環境下進行。煅燒環境,例如可舉例NH 3、N 2等中性氣體、H 2、CH 4等還原性氣體。此等可單獨使用或組合2種以上使用。其中,就改善螢光體之發光強度之觀點來看,煅燒環境中,可以使用NH 3、N 2或H 2,宜使用NH 3或N 2。 煅燒環境,例如,可為以NH 3、或N 2成為主成分之方式構成。NH 3或N 2之純度,於200℃,例如,為98體積%以上,宜為99體積%以上。 此外,就絕熱材料或加熱器等之爐材而言,可使用為碳製之石墨電阻加熱方式之電子爐、為鉬或鎢製之全金屬爐、將氧化鋁或石英製之爐心管以加熱器進行加熱之管狀爐、經賦予耐腐蝕性之爐。因應爐材,可使用適當的氣體種類。 (Calcination Environment) The calcination step is preferably carried out in a reducing calcination environment in which at least a part of Eu 3+ in the raw material mixture can be reduced to Eu 2+ . Examples of the calcination environment include neutral gases such as NH 3 and N 2 , and reducing gases such as H 2 and CH 4 . These can be used alone or in combination of two or more. Among them, from the viewpoint of improving the luminous intensity of the phosphor, NH 3 , N 2 or H 2 can be used in the calcination environment, and NH 3 or N 2 is preferably used. The calcination environment, for example, may be composed of NH 3 or N 2 as a main component. The purity of NH3 or N2 , at 200°C, is, for example, 98% or more by volume, preferably 99% or more by volume. In addition, for the furnace materials such as heat insulating materials and heaters, electric furnaces made of carbon and graphite resistance heating method, all-metal furnaces made of molybdenum or tungsten, and furnace core tubes made of alumina or quartz can be used. A tubular furnace heated by a heater, a furnace provided with corrosion resistance. Appropriate gas types can be used according to the furnace material.

(煅燒壓力) 煅燒時之壓力,由於可抑制原料混合物及產物即螢光體之熱分解,在可能的範圍內宜為高的值。煅燒時之具體的壓力,宜為0.1MPa(大氣壓)以上。 (calcination pressure) The pressure during calcination is preferably as high as possible in order to suppress thermal decomposition of the raw material mixture and the phosphor, that is, the product. The specific pressure during calcination is preferably 0.1 MPa (atmospheric pressure) or more.

(煅燒次數) 上述煅燒步驟之次數,可為1次,亦可為多次。 另外,煅燒步驟之次數,係調控煅燒溫度及煅燒壓力,在維持該經調控的煅燒溫度及煅燒壓力之狀態下,將原料混合物煅燒後,隨著解除煅燒壓力之調控,煅燒而得之螢光體(燒結體)冷卻至室溫,將此定義為1週期,該週期之重複次數稱為煅燒步驟之次數。 (Number of calcinations) The number of times of the above-mentioned calcination steps may be one time or multiple times. In addition, the number of calcination steps is controlled by the calcination temperature and calcination pressure. Under the condition of maintaining the regulated calcination temperature and calcination pressure, after calcining the raw material mixture, as the control of the calcination pressure is released, the fluorescence obtained by calcination The body (sintered body) was cooled to room temperature, which was defined as 1 cycle, and the number of repetitions of this cycle was called the number of calcination steps.

(煅燒後之退火處理) 亦可將煅燒而得之螢光體、及將其經粉碎處理後之螢光體粒子、進一步粒度調整後之螢光體粒子,以600~1300℃之溫度進行熱處理(亦稱為退火處理)。藉由該操作,有時螢光體中含有的缺陷及由於粉碎所致之損傷會回復。缺陷及損傷會成為發光強度之降低之原因,藉由上述熱處理,有時發光強度會回復。 (annealing treatment after calcination) The phosphor obtained by calcination, the phosphor particles after pulverization, and the phosphor particles after further particle size adjustment can also be heat-treated at a temperature of 600-1300°C (also called annealing treatment). . By this operation, the defects contained in the phosphor and the damage due to pulverization may be recovered. Defects and damages may cause a decrease in the luminous intensity, and the luminous intensity may be recovered by the above-mentioned heat treatment.

另外,亦可將煅燒後、上述退火處理後之螢光體,以溶劑、或酸性或鹼性溶液進行清洗。藉由該操作,亦可減低在煅燒溫度以下之溫度下產生液相之化合物之含量、副相。其結果,螢光體之發光強度會提高。In addition, the phosphor after calcination and after the above-mentioned annealing treatment may be washed with a solvent, or an acidic or alkaline solution. This operation can also reduce the content and subphase of the compound that generates a liquid phase at a temperature lower than the calcination temperature. As a result, the luminous intensity of the phosphor increases.

[步驟2:被覆層形成步驟] 然後,在得到的核心之表面形成被覆層。例如,宜為使在步驟1得到的螢光體與後述有機矽化合物接觸,藉由進行熱處理,在螢光體之結晶相之表面形成具有聚矽氧烷鍵之層。以下進行詳細說明。 (漿體之製備) 首先,將得到的核心(結晶相)分散在分散介質中來製備漿體。 就分散介質而言,只要是核心不會溶解而有機矽化合物會溶解者,並無特別限制而能夠使用。分散介質,例如,可舉例公知的有機溶劑,可使用乙醇、異丙醇等。並且,為了後述水解,亦可使用NH 4OH。 此外,為了能均勻地分散,可用公知的方法進行攪拌,亦可在室溫下進行該攪拌。 [Step 2: Coating Layer Forming Step] Next, a coating layer is formed on the surface of the obtained core. For example, it is preferable to form a layer having a polysiloxane bond on the surface of the crystal phase of the phosphor by contacting the phosphor obtained in the step 1 with an organosilicon compound to be described later, and performing heat treatment. A detailed description will be given below. (Preparation of Slurry) First, the obtained core (crystalline phase) is dispersed in a dispersion medium to prepare a slurry. The dispersion medium can be used without particular limitation as long as the core does not dissolve but the organosilicon compound dissolves. As the dispersion medium, for example, known organic solvents can be exemplified, and ethanol, isopropanol, and the like can be used. In addition, NH 4 OH can also be used for the hydrolysis described later. Moreover, in order to disperse|distribute uniformly, a well-known method may be used for stirring, and this stirring may be performed at room temperature.

(有機矽化合物之添加) 在得到的漿體中添加有機矽化合物等,並使其分散。 就有機矽化合物之添加量而言,有機矽化合物中之Si原子之含量,宜為以相對於核心100質量份成為0.001~10質量份之方式進行調整。 有機矽化合物之添加方法,可使用公知的方法,亦可藉由滴加來進行。此外,使用APTES、TEOS作為有機矽化合物時,可藉由使用了鹼,例如NH 4OH的公知之方法,使APTES、TEOS水解並進行膠凝。 攪拌時間並無特別限制,例如亦可為15分鐘~2小時。 (Addition of organosilicon compound) An organosilicon compound etc. are added to the obtained slurry, and it is made to disperse|distribute. Regarding the amount of the organosilicon compound to be added, the content of Si atoms in the organosilicon compound is preferably adjusted so as to be 0.001 to 10 parts by mass relative to 100 parts by mass of the core. A known method can be used for the addition method of an organosilicon compound, and it can also be performed by dripping. In addition, when APTES and TEOS are used as organosilicon compounds, APTES and TEOS can be hydrolyzed and gelled by a known method using a base such as NH 4 OH. The stirring time is not particularly limited, and may be, for example, 15 minutes to 2 hours.

(後處理) 然後,藉由過濾分散液並進行加熱,可得到被覆層形成在核心之表面之螢光體粒子。 過濾、加熱方法並無特別限制,可使用公知的方法。加熱條件,例如,可設定為在大氣下,100~500℃、1~15小時,亦可設定為1~5小時。藉此,能夠使具有聚矽氧烷鍵之層穩定地形成在核心表面。此外,就抑制Eu 2+之氧化等之觀點而言,亦可設定為在氮氣環境下。 (Post-treatment) Then, the dispersion liquid is filtered and heated to obtain phosphor particles in which the coating layer is formed on the surface of the core. The filtration and heating methods are not particularly limited, and known methods can be used. The heating conditions can be set to, for example, 100 to 500° C. for 1 to 15 hours, or 1 to 5 hours in the atmosphere. Thereby, a layer having a polysiloxane bond can be stably formed on the core surface. In addition, from the viewpoint of suppressing the oxidation of Eu 2+ , etc., it is also possible to set it in a nitrogen atmosphere.

藉由如此設定,可得到核心之表面係由被覆層被覆之螢光體粒子。By setting in this way, phosphor particles in which the surface of the core is covered with the coating layer can be obtained.

[性能] 藉此,本實施形態之螢光體粒子,係可具有放射線、及紫外線至可見光之寬廣的激發範圍,可發出藍色至紅色的光。特別是具有特定的組成之核心之螢光體粒子,可發出450~650nm之藍色至紅色的光,且可調節發光峰部波長及其半峰全幅值。並且,本實施形態之螢光體粒子,可維持如此之發光特性的同時改善耐久性。 此外,本實施形態之螢光體粒子,作為構成螢光體板、使用了該螢光體板之發光元件之材料係有用。並且,使用了上述發光元件之照明設備、圖像顯示裝置亦會發揮高顏色再現性。此外,本實施形態之螢光體粒子亦適用於顏料、紫外線吸收劑中。本實施形態之螢光體粒子不僅可單獨使用。例如,將含有本實施形態之螢光體粒子之各材料與樹脂等混合而製備組成物,然後使該組成物成形,藉此可提供如螢光成形物、螢光片材或螢光薄膜般之成形體。另外,本實施形態之螢光體粒子,由於亦具有即使暴露在高溫下也不易劣化而耐熱性優良,在氧化環境及水分環境下之長時間穩定性亦優良之優點,可以提供耐久性優良的產品。 [performance] Accordingly, the phosphor particles of the present embodiment can have a wide excitation range of radiation and ultraviolet light to visible light, and can emit blue to red light. In particular, the phosphor particles having a core with a specific composition can emit blue to red light in the range of 450-650 nm, and can adjust the wavelength of the luminescence peak and the full width at half maximum. In addition, the phosphor particles of the present embodiment can improve durability while maintaining such light-emitting properties. In addition, the phosphor particles of the present embodiment are useful as a material constituting a phosphor plate and a light-emitting element using the phosphor plate. In addition, lighting equipment and image display devices using the above-mentioned light-emitting elements also exhibit high color reproducibility. In addition, the phosphor particles of this embodiment are also suitable for use in pigments and ultraviolet absorbers. The phosphor particles of the present embodiment can be used not only alone. For example, by mixing each material containing the phosphor particles of the present embodiment with a resin, etc. to prepare a composition, and then molding the composition, it is possible to provide a fluorescent molded article, a fluorescent sheet, or a fluorescent film. the shaped body. In addition, the phosphor particles of the present embodiment also have the advantages that they are not easily deteriorated even when exposed to high temperatures, have excellent heat resistance, and are also excellent in long-term stability in oxidative environments and moisture environments, and can provide excellent durability. product.

<3.發光元件> 本實施形態之螢光體粒子可使用在各種的用途。含有本實施形態之螢光體粒子之發光元件亦為本發明之態樣之一。關於上述發光元件,可將本實施形態之螢光體粒子直接以粒子狀使用,亦可再次進行煅燒使其成為團塊狀。有時將螢光體粒子再次進行煅燒特別是煅燒成平板狀而得之燒結體,亦稱為螢光體板。此外,此處所稱之發光元件,一般而言係含有螢光體、及上述螢光體之激發源而構成。 <3. Light-emitting element> The phosphor particles of this embodiment can be used in various applications. A light-emitting element containing the phosphor particles of the present embodiment is also one aspect of the present invention. Regarding the above-mentioned light-emitting element, the phosphor particles of the present embodiment may be used as they are in the form of particles, or may be calcined again to be in the form of agglomerates. In some cases, a sintered body obtained by firing the phosphor particles again, particularly into a flat plate shape, is also referred to as a phosphor plate. In addition, the light-emitting element referred to here is generally constituted by including a phosphor and an excitation source of the phosphor.

使用本實施形態之螢光體粒子,製成一般而言稱為發光二極體(亦稱為LED)之發光元件時,例如,一般而言宜採用將本實施形態之螢光體粒子分散在樹脂、玻璃(此等統稱為固體介質)中而得之含有螢光體粒子之組成物之成形體或燒結體,以來自激發源之激發光能照射在螢光體粒子之方式來配置之形態。此時,在含有螢光體粒子之組成物中,亦可一併含有本實施形態之螢光體粒子以外的螢光體。When the phosphor particles of this embodiment are used to form light-emitting elements generally called light-emitting diodes (also called LEDs), for example, it is generally appropriate to disperse the phosphor particles of this embodiment in Formed body or sintered body of a composition containing phosphor particles obtained from resins and glass (these are collectively referred to as solid media), and the form in which the phosphor particles are irradiated with excitation light from an excitation source . In this case, phosphors other than the phosphor particles of the present embodiment may be contained in the composition containing phosphor particles.

可使用作為上述含有螢光體粒子之組成物之固體介質之樹脂,只要是在成形之前或使螢光體粒子分散時為液狀,且不會產生就本實施形態之螢光體粒子或發光元件而言為不良的反應等,則可因應目的等選擇任意的樹脂。樹脂之例,可舉例加成反應型聚矽氧樹脂、縮合反應型聚矽氧樹脂、改性聚矽氧樹脂、環氧樹脂、聚乙烯基系樹脂、聚乙烯系樹脂、聚丙烯系樹脂、聚酯系樹脂等。此等之樹脂可單獨使用1種類,亦可用任意的組合及比率合併使用2種類以上。上述樹脂為熱硬化性樹脂時,藉由使其硬化,可得到分散了本實施形態之螢光體粒子之含有螢光體粒子之組成物之成形體(硬化體)。The resin used as the solid medium of the above-mentioned composition containing phosphor particles can be used, as long as it is in a liquid state before molding or when the phosphor particles are dispersed, and does not generate phosphor particles or luminescence which is not the case with the present embodiment. If it is an undesired reaction or the like for the element, any resin can be selected according to the purpose or the like. Examples of resins include addition reaction type polysiloxane resins, condensation reaction type polysiloxane resins, modified polysiloxane resins, epoxy resins, polyethylene-based resins, polyethylene-based resins, polypropylene-based resins, polyester resin, etc. One type of these resins may be used alone, or two or more types may be used in combination in arbitrary combinations and ratios. When the said resin is a thermosetting resin, by making it harden, the molded object (hardened body) of the fluorescent substance particle containing composition which disperse|distributed the fluorescent substance particle of this embodiment can be obtained.

上述固體介質之使用比率並無特別限制,可因應用途等適當地調整,一般而言,固體介質相對於本實施形態之螢光體粒子之質量比率,通常為3質量%以上,宜為5質量%以上,此外,通常為30質量%以下,宜為15質量%以下。The usage ratio of the above-mentioned solid medium is not particularly limited, and can be appropriately adjusted according to the application, etc. Generally speaking, the mass ratio of the solid medium to the phosphor particles of this embodiment is usually 3 mass % or more, preferably 5 mass % % or more, and generally 30 mass % or less, preferably 15 mass % or less.

此外,本實施形態之含有螢光體之組成物,除了本實施形態之螢光體粒子及固體介質之外,因應其用途等,亦可含有其他的成分。其他的成分,可舉例擴散劑、增稠劑、增量劑、干涉劑等。具體而言,可舉例AEROSIL等氧化矽系微粉、氧化鋁等。藉此,變得易於得到良好的擴散性、黏性。In addition, the phosphor-containing composition of the present embodiment may contain other components in addition to the phosphor particles and the solid medium of the present embodiment, depending on the application and the like. Other components include diffusing agents, thickeners, extenders, interference agents, and the like. Specifically, silicon oxide-based micropowders such as AEROSIL, alumina, and the like can be exemplified. Thereby, it becomes easy to obtain favorable diffusivity and viscosity.

此外,本實施形態之螢光體粒子以外的螢光體,可舉例選自BAM螢光體、β-矽鋁氮氧化物螢光體、α-矽鋁氮氧化物螢光體、Sr 2Si 5N 8螢光體、(Sr,Ba) 2Si 5N 8螢光體、CaAlSiN 3螢光體、(Ca,Sr)AlSiN 3螢光體、KSF螢光體、YAG螢光體、及(Ca,Sr,Ba)Si 2O 2N 2中1種類或2種類以上之螢光體。 In addition, phosphors other than the phosphor particles of the present embodiment can be selected from BAM phosphors, β-silicon aluminum oxynitride phosphors, α-silicon aluminum oxynitride phosphors, Sr 2 Si 5 N 8 phosphor, (Sr,Ba) 2 Si 5 N 8 phosphor, CaAlSiN 3 phosphor, (Ca, Sr)AlSiN 3 phosphor, KSF phosphor, YAG phosphor, and ( Ca, Sr, Ba) Si 2 O 2 N 2 of one or more kinds of phosphors.

就發光元件之實施形態之一而言,本實施形態之含有螢光體粒子之組成物,除了本實施形態之螢光體粒子之外,可更含有因發光體或激發源發出發光峰部波長為420~500nm的光之藍色螢光體。如此之藍色螢光體,例如可舉例AlN:(Eu,Si)、BAM:Eu、SrSi 9Al 19ON 31:Eu、LaSi 9Al 19N 32:Eu、α-矽鋁氮氧化物:Ce、JEM:Ce等。 As for one of the embodiments of the light-emitting element, the composition containing the phosphor particles of this embodiment may further contain the emission peak wavelengths emitted by the light-emitting body or the excitation source in addition to the phosphor particles of the present embodiment. It is a blue phosphor for light of 420 to 500 nm. Such blue phosphors include, for example, AlN: (Eu, Si), BAM: Eu, SrSi 9 Al 19 ON 31 : Eu, LaSi 9 Al 19 N 32 : Eu, α-SiAl oxynitride: Ce , JEM: Ce and so on.

此外,就發光元件之實施形態之一而言,本實施形態之含有螢光體粒子之組成物,除了本實施形態之螢光體粒子之外,可更含有因發光體或激發源發出發光峰部波長為500~550nm的光之綠色螢光體。如此之綠色螢光體,例如可舉例β-矽鋁氮氧化物:Eu、(Ba,Sr,Ca,Mg) 2SiO 4:Eu、(Ca,Sr,Ba)Si 2O 2N 2:Eu等。 In addition, as for one of the embodiments of the light-emitting element, the composition containing the phosphor particles of the present embodiment may further contain, in addition to the phosphor particles of the present embodiment, a luminescence peak due to a light-emitting body or an excitation source A green phosphor for light with a wavelength of 500 to 550 nm. Such a green phosphor, for example, β-silicon aluminum oxynitride: Eu, (Ba, Sr, Ca, Mg) 2 SiO 4 : Eu, (Ca, Sr, Ba) Si 2 O 2 N 2 : Eu Wait.

並且,就發光元件之實施形態之一而言,本實施形態之含有螢光體粒子之組成物,除了本實施形態之螢光體粒子之外,可更含有因發光體或激發源發出發光峰部波長為550~600nm的光之黃色螢光體。如此之黃色螢光體,例如可舉例YAG:Ce、α-矽鋁氮氧化物:Eu、CaAlSiN 3:Ce、La 3Si 6N 11:Ce等。 In addition, in one of the embodiments of the light-emitting element, the composition containing the phosphor particles of the present embodiment may further contain a luminescence peak due to the light-emitting body or the excitation source in addition to the phosphor particles of the present embodiment. A yellow phosphor for light with a wavelength of 550 to 600 nm. Such yellow phosphors include, for example, YAG: Ce, α-SiAl oxynitride: Eu, CaAlSiN 3 : Ce, La 3 Si 6 N 11 : Ce, and the like.

並且此外,就發光元件之實施形態之一而言,本實施形態之含有螢光體粒子之組成物,除了本實施形態之螢光體粒子之外,可更含有因發光體或激發源發出發光峰部波長為600~700nm的光之紅色螢光體。如此之紅色螢光體,例如可舉例CaAlSiN 3:Eu、(Ca,Sr)AlSiN 3:Eu、Ca 2Si 5N 8:Eu、Sr 2Si 5N 8:Eu、KSF:Mn等。 In addition, with regard to one of the embodiments of the light-emitting element, the composition containing the phosphor particles of the present embodiment may further contain, in addition to the phosphor particles of the present embodiment, light emitted by a light-emitting body or an excitation source. A red phosphor for light with a peak wavelength of 600 to 700 nm. Examples of such red phosphors include CaAlSiN 3 :Eu, (Ca,Sr)AlSiN 3 :Eu, Ca 2 Si 5 N 8 :Eu, Sr 2 Si 5 N 8 :Eu, KSF:Mn, and the like.

本實施形態之發光元件中,含有本實施形態之螢光體粒子作為螢光體板時,上述螢光體板,意指將粒子狀之本實施形態之螢光體成形為期望之形狀後,經加熱煅燒而得之燒結體。但是,本實施形態之螢光體板中,亦可含有本實施形態之螢光體粒子以外的螢光體、或其他的成分。於此處所稱之其他的成分,例如可舉例成為介質之玻璃等、或黏結劑樹脂、分散劑、及助燒結劑。上述黏結劑樹脂、分散劑、及助燒結劑之添加劑並無特別限制,可適宜使用一般而言在加熱煅燒時會同時分解去除之在該領域中為公知的物質。In the light-emitting element of the present embodiment, when the phosphor particles of the present embodiment are contained as the phosphor plate, the phosphor plate means that the phosphor of the present embodiment in the form of particles is formed into a desired shape, A sintered body obtained by heating and calcining. However, the phosphor plate of the present embodiment may contain phosphors other than the phosphor particles of the present embodiment, or other components. The other components referred to here include, for example, glass used as a medium, or a binder resin, a dispersant, and a sintering aid. The additives for the above-mentioned binder resin, dispersant, and sintering aid are not particularly limited, and generally known substances in the field that are decomposed and removed at the same time during heating and sintering can be suitably used.

在製作上述螢光體板時使用之螢光體粒子之平均粒徑並無特別限制,由於賦予成形性之黏結劑樹脂之添加量會隨著螢光體粒子之比表面積而增減,例如宜為0.1~30μm。The average particle size of the phosphor particles used in the production of the phosphor plate is not particularly limited. Since the addition amount of the binder resin for imparting formability will increase or decrease with the specific surface area of the phosphor particles, for example, it is preferable to 0.1 to 30 μm.

上述螢光體板,例如能夠用以下方法進行製造。在本實施形態之螢光體粒子中,添加黏結劑樹脂、分散劑、助燒結劑等添加劑,更加入分散介質並進行濕式混合,調整得到的漿體之黏度,製成為片狀、盤狀等形狀,將其進行加熱煅燒使添加劑分解去除。藉此,可得到本實施形態之螢光體片材。加熱煅燒之溫度、時間、及煅燒環境,取決於使用的材料適當變更為公知的條件即可。此外,添加比本實施形態之螢光體粒子更低熔點之玻璃粉末並進行成形,然後進行煅燒來製造螢光體板之方法等亦有效果。The above-mentioned phosphor plate can be produced, for example, by the following method. In the phosphor particles of this embodiment, additives such as binder resin, dispersant, and sintering aid are added, and a dispersion medium is added and wet-mixed to adjust the viscosity of the obtained slurry to form a sheet or disc. It is heated and calcined to decompose and remove the additive. Thereby, the phosphor sheet of this embodiment can be obtained. The heating and calcining temperature, time, and calcining environment may be appropriately changed to known conditions depending on the material to be used. In addition, a method of adding a glass powder having a lower melting point than the phosphor particles of the present embodiment, molding, and then firing to produce a phosphor plate is also effective.

本實施形態之發光元件中含有的激發源,能夠激發本實施形態之螢光體粒子或其他的種類之螢光體並使其發光。該激發源,例如為發出激發能量之光源。本實施形態之螢光體,即使照射100~190nm之真空紫外線、190~380nm之紫外線、電子束等仍會發光,但就適宜的激發源而言,例如,可舉例藍色半導體發光元件。藉由來自該激發源的光,本實施形態之螢光體粒子亦會發光,故可適合用在發光元件。另外,本實施形態之發光元件沒有一定需為單一之元件,亦可為組合多數的發光元件而得之一體型之元件。The excitation source contained in the light-emitting element of the present embodiment can excite the phosphor particles of the present embodiment or other types of phosphors to emit light. The excitation source is, for example, a light source that emits excitation energy. The phosphor of this embodiment emits light even if it is irradiated with vacuum ultraviolet rays of 100-190 nm, ultraviolet rays of 190-380 nm, electron beams, etc., but as a suitable excitation source, for example, a blue semiconductor light-emitting element can be exemplified. The phosphor particles of this embodiment also emit light by the light from the excitation source, and thus can be suitably used in a light-emitting element. In addition, the light-emitting element of the present embodiment does not necessarily need to be a single element, and may be a one-piece element obtained by combining a plurality of light-emitting elements.

就本實施形態之發光元件之一形態,因發光體或激發源而發出峰部波長為300~500nm、宜為300~470nm之紫外光或可見光,藉由將本實施形態之螢光體粒子發出的藍色光~黃綠色光~紅色光(例如,435nm~570nm~750nm),與本實施形態之其他的螢光體發出的450nm以上之波長的光混合而發出白色光或白色光以外的光之發光元件。In one form of the light-emitting element of the present embodiment, the light-emitting body or excitation source emits ultraviolet light or visible light with a peak wavelength of 300-500 nm, preferably 300-470 nm, by emitting the phosphor particles of this embodiment. blue light to yellow-green light to red light (for example, 435 nm to 570 nm to 750 nm), mixed with light with a wavelength of 450 nm or more emitted by other phosphors of this embodiment to emit white light or light other than white light. light-emitting element.

另外,上述發光元件之實施形態為例示,除了本實施形態之螢光體之外,若適當組合藍色螢光體、綠色螢光體、黃色螢光體或紅色螢光體,則可產生具有期望的色調之白色光之情事係不言可喻。In addition, the above-mentioned embodiment of the light-emitting element is an example, and in addition to the phosphor of the present embodiment, if a blue phosphor, a green phosphor, a yellow phosphor or a red phosphor is appropriately combined, it is possible to produce a The love of white light in the desired hue is self-evident.

此外,就發光元件之實施形態之一而言,若使用藉由發光體或激發源發出280~500nm之波長的光之LED則發光效率高,故可構成高效率之發光裝置。另外,來自使用的激發源的光沒有特別限制為單色光,亦可為多色光。In addition, in one of the embodiments of the light-emitting element, if an LED that emits light having a wavelength of 280 to 500 nm by a light-emitting body or an excitation source is used, the light-emitting efficiency is high, so that a high-efficiency light-emitting device can be formed. In addition, the light from the excitation source used is not particularly limited to monochromatic light, and may be polychromatic light.

圖3中,概略地表示使用了本實施形態之螢光體粒子之發光元件(表面安裝型LED)。In FIG. 3 , a light-emitting element (surface-mounted LED) using the phosphor particles of the present embodiment is schematically shown.

製作表面安裝型白色發光二極體燈(11)。2根引線(12、13)固定在可見光反射率高之白色之氧化鋁陶瓷基板(19)。此等引線(12、13)之一端部位於氧化鋁陶瓷基板(19)之大略中央部,另一端部各別暴露在外成為安裝至電基板時焊接之電極。於引線(12、13)中之一之引線(13)之一端部,以成為基板中央部之方式,載置並固定發光峰部波長為450nm之藍色發光二極體元件(14)。藍色發光二極體元件(14)之下部電極與引線(13)係藉由導電性糊劑電性連接,上部電極與另一根引線(12)係藉由金細線構成之接合線(bonding wire)(15)電性連接。A surface-mounted white light-emitting diode lamp (11) is produced. Two lead wires (12, 13) are fixed on a white alumina ceramic substrate (19) with high visible light reflectivity. One end of the lead wires (12, 13) is located in the approximate center of the alumina ceramic substrate (19), and the other ends are exposed to the outside and become electrodes for soldering when mounted on the electrical substrate. A blue light-emitting diode element (14) with an emission peak wavelength of 450 nm is placed and fixed on one end of the lead (13) of one of the leads (12, 13) so as to become the center of the substrate. The lower electrode and the lead (13) of the blue light-emitting diode element (14) are electrically connected by a conductive paste, and the upper electrode and the other lead (12) are made of a bonding wire composed of a thin gold wire. wire) (15) is electrically connected.

第一樹脂(16)與上述實施形態之螢光體粒子(17)之混合物,係配置在藍色發光二極體元件(14)附近。分散了該螢光體粒子(17)之第一樹脂(16)係透明,被覆藍色發光二極體元件(14)之全體。此外,在氧化鋁陶瓷基板(19)上,固定有為於中央部開孔之形狀的壁面構件(20)。壁面構件(20)於其中央部係成為用以收納藍色發光二極體元件(14)及分散了螢光體粒子(17)之第一樹脂(16)的孔洞,面向中央之部分成為斜面。該斜面,係用以將光向上方取出之反射面,該斜面可以是平坦,亦可以是曲面形,在該情形下之曲面形可考慮光的反射方向來決定。此外,至少構成反射面之面係成為白色或具有金屬光澤之可見光反射率高的面。該發光元件中,該壁面構件(20)係藉由白色的聚矽氧樹脂構成。壁面構件(20)之中央部的孔洞,就作為晶片型發光二極體燈使用時之最終形狀而言,亦可形成凹部,在圖3中,此處係為了將藍色發光二極體元件(14)及分散了螢光體粒子(17)之第一樹脂(16)全部密封而填充了透明的第二樹脂(18)。該發光元件中,第一樹脂(16)及第二樹脂(18)可使用相同的環氧樹脂。該發光元件係發出白色光。The mixture of the first resin (16) and the phosphor particles (17) of the above-mentioned embodiment is arranged near the blue light-emitting diode element (14). The first resin (16) in which the phosphor particles (17) are dispersed is transparent and covers the entirety of the blue light-emitting diode element (14). In addition, on the alumina ceramic substrate (19), a wall surface member (20) having a shape of opening a hole in the center portion is fixed. The central part of the wall member (20) becomes a hole for accommodating the blue light-emitting diode element (14) and the first resin (16) in which the phosphor particles (17) are dispersed, and the part facing the center becomes an inclined surface . The inclined surface is a reflective surface used to extract light upward. The inclined surface can be flat or curved. In this case, the curved surface can be determined in consideration of the reflection direction of the light. Further, at least the surface constituting the reflective surface is a surface with a high visible light reflectance of white or metallic luster. In the light-emitting element, the wall member (20) is made of white polysiloxane. The hole in the central part of the wall member (20) can also be formed as a concave part in terms of the final shape when used as a wafer-type light-emitting diode lamp. (14) and the first resin (16) in which the phosphor particles (17) are dispersed are all sealed and filled with a transparent second resin (18). In this light-emitting element, the same epoxy resin can be used for the first resin (16) and the second resin (18). The light-emitting element emits white light.

<4.發光裝置> 另外,具有本實施形態之螢光體粒子、及發光光源之發光裝置,亦為本發明之態樣之一。發光裝置之具體例,可舉例照明設備、液晶面板用背光、各種的顯示器具等。發光光源,可使用公知的發光元件。例如,藉由將發光元件之一即白色LED作為發光光源,與本實施形態之螢光體粒子組合可得到發出白色光之發光裝置。 <4. Light-emitting device> In addition, a light-emitting device having the phosphor particles of the present embodiment and a light-emitting light source is also one aspect of the present invention. Specific examples of the light-emitting device include lighting equipment, backlights for liquid crystal panels, various display devices, and the like. As the light-emitting light source, a known light-emitting element can be used. For example, a light-emitting device that emits white light can be obtained by using a white LED, one of the light-emitting elements, as a light-emitting light source, in combination with the phosphor particles of the present embodiment.

<5.圖像顯示裝置> 另外,具有上述態樣之發光裝置之圖像顯示裝置,亦為本發明之態樣之一。圖像顯示裝置之具體例可舉例螢光顯示管(VFD)、場發射顯示器(FED)、電漿顯示器(PDP)、陰極射線管(CRT)、液晶顯示器(LCD)等。 <5. Image Display Device> In addition, an image display device having the light-emitting device of the above aspect is also one aspect of the present invention. Specific examples of the image display device include a fluorescent display tube (VFD), a field emission display (FED), a plasma display (PDP), a cathode ray tube (CRT), a liquid crystal display (LCD), and the like.

<6.顏料> 本實施形態之螢光體粒子利用其功能,亦可用來作為例如顏料之構成材料。對於本實施形態之螢光體粒子照射太陽光、螢光燈等照明時所觀察到的白色之物體色之顯色佳,經過長時間也不會劣化,故本實施形態之螢光體粒子可適宜使用於例如無機顏料。因此,若將本實施形態之螢光體粒子添加至塗料、印墨、繪畫用具、釉藥、塑膠製品中作為顏料使用,則可持續長時間保持良好的白色。 <6. Pigment> The phosphor particles of the present embodiment can also be used as, for example, a constituent material of pigments by utilizing their functions. The phosphor particles of this embodiment have good color rendering of the white object color observed when irradiated with sunlight, fluorescent lamps, etc., and will not deteriorate over a long period of time, so the phosphor particles of this embodiment can be Suitable for use, for example, in inorganic pigments. Therefore, if the phosphor particles of this embodiment are added to paints, printing inks, painting utensils, glazes, and plastic products and used as pigments, good whiteness can be maintained for a long time.

<7.紫外線吸收劑> 本實施形態之螢光體粒子,不僅是單獨使用,亦可利用其功能,例如作為紫外線吸收劑之構成材料使用。即,將含有本實施形態之螢光體粒子之紫外線吸收劑,例如揉入塑膠製品、塗料中,或塗布在塑膠製品之表面,可有效地保護它們因紫外線影響而劣化。 <7. Ultraviolet absorber> The phosphor particles of the present embodiment are not only used alone, but can also be used as a constituent material of an ultraviolet absorber, for example, by utilizing their functions. That is, the ultraviolet absorber containing the phosphor particles of the present embodiment is kneaded into plastic products, paints, or coated on the surface of plastic products, so as to effectively protect them from being deteriorated by ultraviolet rays.

<8.螢光體片材> 將本實施形態之螢光體粒子,例如與樹脂混合成為組成物,更將其進行成形所得之螢光體成形物、螢光體薄膜、螢光體片材,亦可舉例作為本實施形態之螢光體粒子之適宜的使用例。例如,此處所稱之本實施形態之螢光體片材,意指將本實施形態之螢光體粒子以均勻地分散在介質中之狀態來含有的該本實施形態之螢光體粒子之片材。介質之材質並無特別限制,宜具有透明性而可維持片狀之形態之材料,例如可舉例樹脂。具體的樹脂,可舉例聚矽氧樹脂、環氧樹脂、聚芳酯樹脂、PET改性聚芳酯樹脂、聚碳酸酯樹脂、環狀烯烴、聚對苯二甲酸乙二酯樹脂、聚甲基丙烯酸甲酯樹脂、聚丙烯樹脂、改性丙烯酸樹脂、聚苯乙烯樹脂及丙烯酸腈苯乙烯共聚物樹脂等。本實施形態之螢光體片材中,就透明性之方面而言,宜使用聚矽氧樹脂、環氧樹脂。若考慮耐熱性之方面,宜使用聚矽氧樹脂。 <8. Phosphor sheet> The phosphor particles of this embodiment, for example, are mixed with a resin to form a composition, and the phosphor molded article, phosphor film, and phosphor sheet obtained by molding the phosphor particles can also be used as examples of this embodiment. A suitable example of use of phosphor particles. For example, the phosphor sheet of the present embodiment referred to here refers to a sheet of the phosphor particles of the present embodiment in which the phosphor particles of the present embodiment are uniformly dispersed in a medium. material. The material of the medium is not particularly limited, and a material that has transparency and can maintain a sheet-like shape is suitable, for example, resin. Specific resins include polysiloxane resins, epoxy resins, polyarylate resins, PET-modified polyarylate resins, polycarbonate resins, cyclic olefins, polyethylene terephthalate resins, polymethyl methacrylates Methyl acrylate resin, polypropylene resin, modified acrylic resin, polystyrene resin and acrylic nitrile styrene copolymer resin, etc. In the phosphor sheet of the present embodiment, silicone resin and epoxy resin are preferably used in terms of transparency. In consideration of heat resistance, polysiloxane should be used.

本實施形態之螢光體片材中,可因應需要加入添加劑。就添加劑而言,例如,可添加成膜時之調平劑、促進螢光體粒子之分散之分散劑、或作為片材表面之改質劑之如矽烷偶聯劑的黏接輔助劑等。此外,本實施形態之螢光體片材中,亦可添加如矽氧樹脂微粒的無機粒子作為螢光體粒子之沉降抑制劑。In the phosphor sheet of this embodiment, additives may be added as required. For the additives, for example, a leveling agent during film formation, a dispersing agent that promotes the dispersion of phosphor particles, or an adhesive adjuvant such as a silane coupling agent as a modifier of the sheet surface can be added. In addition, inorganic particles such as silicone resin fine particles may be added to the phosphor sheet of the present embodiment as a sedimentation inhibitor of the phosphor particles.

本實施形態之螢光體片材之厚度並無特別限制,從螢光體粒子之含量、及期望之光學特性決定即可。就增加螢光體粒子之含量,改善操作性、光學特性、耐熱性之觀點來看,厚度,例如為10~3mm,較宜為50~1mm。The thickness of the phosphor sheet of the present embodiment is not particularly limited, and may be determined from the content of phosphor particles and desired optical properties. From the viewpoint of increasing the content of the phosphor particles and improving the handleability, optical properties, and heat resistance, the thickness is, for example, 10 to 3 mm, preferably 50 to 1 mm.

本實施形態之螢光體片材之製造方法並無特別限制,可使用公知的方法。另外,本實施形態之螢光體片材,只要含有本實施形態之螢光體即可,可為單層片亦可為多層片。此外,本實施形態之螢光體片材,其全體之厚度沒有一定要為均勻。本實施形態之螢光體片材,在其單側或兩側之表面、或內部,亦可設置基材層。基材層之材質亦無特別限制,例如,可使用公知的金屬、薄膜、玻璃、陶瓷、紙等。具體的基材層中,可使用如鋁(亦包含鋁合金)、鋅、銅、鐵等金屬板或金屬箔、如纖維素醋酸、聚對苯二甲酸乙二酯(PET)、聚乙烯、聚酯、聚醯胺、聚醯亞胺、聚苯硫醚、聚苯乙烯、聚丙烯、聚碳酸酯、聚乙烯基縮醛、聚芳醯胺(aramid)等塑膠的薄膜、經上述塑膠層合的紙、或藉由上述塑膠經塗佈的紙、經上述金屬層合或蒸鍍的紙、經上述金屬層合或蒸鍍的塑膠薄膜等。此外,基材層中使用金屬板時,金屬板之表面,亦可經鉻系、鎳系等鍍敷處理或陶瓷處理。特別是,基材層之材質宜為柔軟且強度高的薄膜。因此,基材層之材質,例如宜為樹脂薄膜,具體而言可舉例PET薄膜、聚醯亞胺薄膜等。There is no restriction|limiting in particular in the manufacturing method of the fluorescent substance sheet of this embodiment, A well-known method can be used. In addition, the phosphor sheet of the present embodiment may be a single-layer sheet or a multi-layer sheet as long as it contains the phosphor of the present embodiment. In addition, the thickness of the whole phosphor sheet of this embodiment does not necessarily have to be uniform. The phosphor sheet of this embodiment may be provided with a base material layer on the surface or inside of one side or both sides. The material of the base material layer is also not particularly limited, and for example, known metals, films, glass, ceramics, paper, and the like can be used. In the specific substrate layer, metal plates or metal foils such as aluminum (including aluminum alloys), zinc, copper, iron, etc. can be used, such as cellulose acetate, polyethylene terephthalate (PET), polyethylene, Polyester, polyamide, polyimide, polyphenylene sulfide, polystyrene, polypropylene, polycarbonate, polyvinyl acetal, polyarylamide (aramid) and other plastic films, through the above plastic layer Laminated paper, or coated paper with the above-mentioned plastic, paper laminated or evaporated by the above-mentioned metal, plastic film laminated or evaporated by the above-mentioned metal, etc. In addition, when a metal plate is used for the base material layer, the surface of the metal plate may be subjected to plating treatment such as chromium-based, nickel-based treatment, or ceramic treatment. In particular, the material of the substrate layer is preferably a soft and high-strength film. Therefore, the material of the base material layer is preferably a resin film, for example, a PET film, a polyimide film, etc. can be specifically mentioned.

以上,針對本發明之實施形態進行說明,但此等為本發明之例示,亦可採用上述以外的各種構成。 [實施例] As mentioned above, although embodiment of this invention was described, these are examples of this invention, and various structures other than the above may be employ|adopted. [Example]

以下,藉由實施例及比較例來說明本發明,但本發明並非受限於此等。Hereinafter, the present invention will be described with reference to Examples and Comparative Examples, but the present invention is not limited thereto.

(原料物質) 就SrLi 3AlO 4之原料物質而言,使用了氧化鋁(Al 2O 3、Tymicron、大明化學工業公司製)粒子、氧化鍶(SrO、高純度化學公司製)粒子、氧化鋰(Li 2O、高純度化學公司製)粒子、鋁酸鋰(LiAlO 2、高純度化學公司製)粒子、及氧化銪(Eu 2O 3、純度99.9%信越化學工業公司製)粒子。 (Raw Material) As the raw material of SrLi 3 AlO 4 , alumina (Al 2 O 3 , Tymicron, manufactured by Daming Chemical Industry Co., Ltd.) particles, strontium oxide (SrO, manufactured by High Purity Chemical Co., Ltd.) particles, lithium oxide were used (Li 2 O, manufactured by High Purity Chemical Co., Ltd.) particles, lithium aluminate (LiAlO 2 , manufactured by High Purity Chemical Co., Ltd.) particles, and europium oxide (Eu 2 O 3 , manufactured by Shin-Etsu Chemical Co., Ltd. with a purity of 99.9%) particles.

<實施例1> 1)結晶相之製作 根據結晶相之設計組成(Sr:Eu:Li:Al:O之原子比(設計值)為0.990:0.010:3.0:1.0:4.0),以粒子狀之各原料物質之SrO:Li 2O:LiAlO 2:Eu 2O 3(質量比)成為51.25:14.93:32.94:0.88(質量比)之方式,在經乾燥之N 2氣體充滿之手套箱中進行秤量。 將經秤量的原料物質,使用氮化矽燒結體製研杵及研缽混合10分鐘,而得到原料混合物。然後,將該原料混合物填充至氧化鋁製之坩堝。 <Example 1> 1) Preparation of crystal phase According to the design composition of the crystal phase (the atomic ratio (design value) of Sr:Eu:Li:Al:O is 0.990:0.010:3.0:1.0:4.0), the particle-like The ratio of SrO: Li2O :LiAlO2 : Eu2O3 ( mass ratio) of each raw material was 51.25:14.93:32.94:0.88 (mass ratio), and weighed in a glove box filled with dried N2 gas . The weighed raw material was mixed for 10 minutes using a silicon nitride sintered pestle and mortar to obtain a raw material mixture. Then, a crucible made of alumina was filled with this raw material mixture.

將填充了原料混合物之上述坩堝裝設在管狀爐中。原料混合物之煅燒程序係如以下。首先,藉由旋轉泵將煅燒環境暫時設為10Pa以下之減壓狀態,導入純度為99.999體積%之NH 3並使爐內之壓力成為大氣壓,將NH 3氣體流量調控為2L/min,從室溫以每分鐘7℃之速度昇溫至800℃,在該溫度維持4小時。然後,解除NH 3氣體之導入,並冷卻至室溫。 The above-mentioned crucible filled with the raw material mixture was set in a tubular furnace. The calcination procedure of the raw material mixture is as follows. First, the calcination environment was temporarily reduced to 10Pa or less by a rotary pump, NH 3 with a purity of 99.999% by volume was introduced to make the pressure in the furnace atmospheric pressure, and the flow rate of NH 3 gas was adjusted to 2L/min. The temperature was raised to 800°C at a rate of 7°C per minute and maintained at this temperature for 4 hours. Then, the introduction of NH 3 gas was released, and it was cooled to room temperature.

從坩堝取出煅燒物,使用氮化矽燒結體製之研杵及研缽進行粉碎,通過75μm之網眼之篩網,得到粒子狀之螢光體(即實施例1之結晶相之核心)。 經藉由雷射繞射法測定粒度分布後,粒徑D50為18μm。針對粒子狀之螢光體,以ICP發光分光分析法實施元素分析後,Sr原子、Li原子、Al原子之原子比(分析值)為1.0:3.0:1.0,確認在煅燒前後之組成沒有變化。 The calcined product was taken out from the crucible, pulverized using a pestle and mortar of the silicon nitride sintered body, and passed through a 75 μm mesh screen to obtain a particulate phosphor (ie, the core of the crystal phase of Example 1). After the particle size distribution was measured by laser diffraction method, the particle size D50 was 18 μm. After performing elemental analysis on the particulate phosphor by ICP emission spectrometry, the atomic ratio (analytical value) of Sr atom, Li atom, and Al atom was 1.0:3.0:1.0, and it was confirmed that the composition did not change before and after firing.

2)被覆 將1.5g之得到的粒子狀之螢光體(核心),加入至經混合20mL之乙醇及2.9mL之28質量%之氨水之混合液中來製備漿體。在該漿體中滴加經混合0.6mL之四乙氧基矽烷(關東化學公司製)與6.2mL之乙醇之混合液,並在室溫下攪拌1小時。然後,在停止攪拌後進行漿體之過濾,將回收物在100℃下乾燥12小時,得到核心之表面係由被覆層被覆之螢光體粒子。 2) Covered 1.5 g of the obtained particulate phosphor (core) was added to a mixed solution of 20 mL of ethanol and 2.9 mL of 28% by mass ammonia to prepare a slurry. A mixed solution of 0.6 mL of tetraethoxysilane (manufactured by Kanto Chemical Co., Ltd.) and 6.2 mL of ethanol was added dropwise to the slurry, followed by stirring at room temperature for 1 hour. Then, after the stirring was stopped, the slurry was filtered, and the recovered product was dried at 100° C. for 12 hours to obtain phosphor particles in which the surface of the core was covered with a coating layer.

<參考例> 將實施例1中得到的結晶相作為參考例之螢光體粒子。 <Reference example> The crystal phase obtained in Example 1 was used as the phosphor particle of the reference example.

使用得到的螢光體粒子,進行以下的測定、評價。其結果表示於表2。Using the obtained phosphor particles, the following measurements and evaluations were performed. The results are shown in Table 2.

(X射線繞射) 針對實施例1之結晶相(核心),進行使用了Cu之Kα射線之粉末X射線繞射測定。X射線繞射模式與圖2所示之由SrLi 3AlO 4結晶計算而得之X射線模式係顯示良好的一致,可確認為具有與SrLi 3AlO 4結晶相同的結晶結構之結晶。 因此,可確認實施例1之結晶相,係對於SrLi 3AlO 4結晶有Eu原子進行了取代之無機化合物。 (X-ray diffraction) With respect to the crystal phase (core) of Example 1, powder X-ray diffraction measurement using Cu Kα rays was performed. The X-ray diffraction pattern showed good agreement with the X-ray pattern calculated from the SrLi 3 AlO 4 crystal shown in FIG. 2 , and it was confirmed that the crystal had the same crystal structure as the SrLi 3 AlO 4 crystal. Therefore, it was confirmed that the crystal phase of Example 1 was an inorganic compound in which Eu atoms were substituted for the SrLi 3 AlO 4 crystal.

(粒徑) 針對實施例1中得到的螢光體粒子,測定由雷射繞射散射法所為之體積基準之積算分率中的相當於累積10、50、90%之粒徑(D10、D50、D90)。 其結果係,D10為18.4μm,D50為69.4μm,D90為130.2μm。 (Particle Size) For the phosphor particles obtained in Example 1, the particle diameters (D10, D50, D90) corresponding to cumulative 10, 50, and 90% in the volume-based integration fraction by the laser diffraction scattering method were measured. As a result, D10 was 18.4 μm, D50 was 69.4 μm, and D90 was 130.2 μm.

[耐久性、發光特性] 將各螢光體粒子,在溫度50℃、相對溼度80%之環境下保存7小時,並進行了耐久性試驗。 藉由多通道分光光譜儀(大塚電子股份有限公司製、「MCPD-7000」)測定耐久性試驗前後之螢光體粒子之外部量子效率,並用以下程序計算得出。 將各螢光體粒子以凹型槽之表面會變得平滑之方式填充至試料部,並裝設在積分球之預定的位置。使用光纖,將來自發光光源(Xe燈)之分光成為455nm之波長之單色光導入至該積分球。將該單色光作為激發源,照射螢光體粒子,進行其螢光譜測定。基於由測定所得之發光光譜,求得發光峰部波長、半峰全幅值。 在試料部安裝反射率為99%之標準反射板(Labsphere公司製、「Spectralon」),測定波長455nm之激發光的光譜。此時,從450~465nm之波長範圍之光譜計算得出激發光光子數(Qex)。 將各螢光體粒子填充至試料部,從照射波長455nm之激發光而得之光譜數據,計算得出激發反射光光子數(Qref)及螢光光子數(Qem)。激發反射光光子數係以與激發光光子數相同的波長範圍計算得出,螢光光子數係以465~800nm之範圍計算得出。 外部量子效率=(Qem/Qex)×100 [durability, light emission characteristics] Each phosphor particle was stored in an environment with a temperature of 50° C. and a relative humidity of 80% for 7 hours, and a durability test was carried out. The external quantum efficiency of the phosphor particles before and after the durability test was measured by a multi-channel spectrometer (manufactured by Otsuka Electronics Co., Ltd., "MCPD-7000"), and calculated by the following procedure. Each phosphor particle is filled in the sample part so that the surface of the concave groove becomes smooth, and is installed at a predetermined position of the integrating sphere. An optical fiber was used to introduce monochromatic light having a wavelength of 455 nm from a light emitting light source (Xe lamp) into the integrating sphere. This monochromatic light is used as an excitation source, and the phosphor particles are irradiated, and the fluorescence spectrum thereof is measured. Based on the emission spectrum obtained by the measurement, the emission peak wavelength and the full width at half maximum were determined. A standard reflector (“Spectralon”, manufactured by Labsphere, Inc.) having a reflectance of 99% was attached to the sample portion, and the spectrum of excitation light having a wavelength of 455 nm was measured. At this time, the number of excitation light photons (Qex) was calculated from the spectrum in the wavelength range of 450 to 465 nm. The sample portion was filled with each phosphor particle, and the number of excitation reflected light photons (Qref) and the number of fluorescence photons (Qem) were calculated from spectral data obtained by irradiating excitation light with a wavelength of 455 nm. The photon number system of excitation reflected light is calculated in the same wavelength range as the photon number of excitation light, and the photon number system of fluorescence is calculated in the range of 465-800 nm. External quantum efficiency=(Qem/Qex)×100

[外部量子效率之規格化] 將耐久試驗前之外部量子效率設定為100%,將其作為基準計算得出耐久試驗後之外部量子效率(%),並進行規格化。其結果表示於表2。 [Normalization of External Quantum Efficiency] The external quantum efficiency before the endurance test was set to 100%, and the external quantum efficiency (%) after the endurance test was calculated and normalized by using this as a benchmark. The results are shown in Table 2.

[螢光體粒子之Si原子之含量(質量%)] 將100mg之各螢光體粒子秤取至白金坩堝,加入1g之鹼性熔融劑(Na 2CO 3、K 2CO 3及H 3BO 3之混合物),以900℃加熱15分鐘進行加熱熔解。放冷後,加入10mL之鹽酸,在100℃水浴中使其溶解並定容至100mL後,以鹽酸稀釋至5倍而得到試驗液。針對該試驗液,使用ICP發光分光分析裝置(Agilent Technologies公司製、「5110VDV」)實施了Si原子之元素分析。 其結果係,沒有實施被覆之試料(參考例)並沒有檢出Si原子。實施例1之螢光體粒子之Si原子之含量,為0.28質量%。 [Content (mass %) of Si atoms in phosphor particles] 100 mg of each phosphor particle was weighed into a platinum crucible, and 1 g of an alkaline flux (Na 2 CO 3 , K 2 CO 3 and H 3 BO was added) The mixture of 3 ) was heated at 900°C for 15 minutes for heating and melting. After standing to cool, 10 mL of hydrochloric acid was added, dissolved in a 100° C. water bath, and the volume was adjusted to 100 mL, and then diluted to 5 times with hydrochloric acid to obtain a test solution. With respect to this test solution, elemental analysis of Si atoms was carried out using an ICP emission spectrometer (manufactured by Agilent Technologies, "5110VDV"). As a result, Si atoms were not detected in the sample without coating (reference example). The content of Si atoms in the phosphor particles of Example 1 was 0.28 mass %.

[被覆層之平均厚度] 針對實施例1,係假定被覆層係均勻地被覆在核心之表面,由Si原子之質量及該螢光體粒子之比表面積以及被覆層之密度計算得出平均厚度。 使用氣體吸附法測定該螢光體粒子之比表面積,結果該螢光體粒子之比表面積為0.159m 2/g。如上述,由於實施例1之螢光體粒子之Si原子為0.28質量%,可計算得出每1g該螢光體粒子存在0.28×10 -2g之Si原子。 若從Si之原子量(28.086)及SiO 2之原子量(60.084)換算成SiO 2之質量則會成為5.99×10 -3g。若將其除以SiO 2之密度(2.65g/cm 3),則可計算出每1g該螢光體粒子之SiO 2之體積為2.26×10 -9m 3,藉由將該體積除以該螢光體粒子之比表面積求得平均厚度。 其結果,實施例1之螢光體粒子之平均厚度為14nm。 [Average thickness of coating layer] For Example 1, the average thickness was calculated from the mass of Si atoms, the specific surface area of the phosphor particles, and the density of the coating layer, assuming that the coating layer was uniformly coated on the surface of the core. The specific surface area of the phosphor particles was measured by a gas adsorption method, and as a result, the specific surface area of the phosphor particles was 0.159 m 2 /g. As described above, since the Si atom of the phosphor particles of Example 1 is 0.28 mass %, it can be calculated that there are 0.28×10 -2 g of Si atoms per 1 g of the phosphor particles. If the mass of SiO 2 is converted from the atomic weight of Si (28.086) and the atomic weight of SiO 2 (60.084), it becomes 5.99×10 −3 g. If it is divided by the density of SiO 2 (2.65g/cm 3 ), the volume of SiO 2 per 1 g of the phosphor particles can be calculated to be 2.26×10 -9 m 3 , by dividing the volume by the The average thickness was obtained from the specific surface area of the phosphor particles. As a result, the average thickness of the phosphor particles of Example 1 was 14 nm.

[表2]

Figure 02_image003
[Table 2]
Figure 02_image003

根據表2,可確認在溫度50℃、相對溼度80%之環境下保存了7小時之情形,實施例1之螢光體粒子,相較參考例之螢光體粒子更能夠良好地維持外部量子效率。According to Table 2, it can be confirmed that the phosphor particles of Example 1 can maintain the external quantum better than the phosphor particles of the reference example when stored for 7 hours in an environment with a temperature of 50°C and a relative humidity of 80%. efficiency.

本專利申請係以於2020年11月19日提申之日本申請特願2020-192433號為基礎,主張優先權,其揭示之全部內容係引用至本說明書中。This patent application claims priority on the basis of Japanese Patent Application No. 2020-192433 filed on November 19, 2020, and the entire disclosure thereof is incorporated herein by reference.

1:氧原子 2:鍶原子 3:AlO 4四面體(中心Al原子) 4:LiO 4四面體(中心Li原子) 11:表面安裝型白色發光二極體燈 12,13:引線 14:藍色發光二極體元件 15:接合線 16:第一樹脂 17:螢光體粒子 18:第二樹脂 19:氧化鋁陶瓷基板 20:壁面構件 1: Oxygen atom 2: Strontium atom 3: AlO 4 tetrahedron (center Al atom) 4: LiO 4 tetrahedron (center Li atom) 11: Surface mount type white light-emitting diode lamp 12, 13: Lead wire 14: Blue Light emitting diode element 15: Bonding wire 16: First resin 17: Phosphor particles 18: Second resin 19: Alumina ceramic substrate 20: Wall member

[圖1]表示SrLi 3AlO 4結晶之結晶結構的圖。 [圖2]表示從SrLi 3AlO 4結晶之結晶結構計算而得之使用了CuKα射線之粉末X射線繞射的圖。 [圖3]使用了本實施形態之螢光體的表面安裝型LED元件的概要圖。 [ Fig. 1] Fig. 1 is a diagram showing the crystal structure of the SrLi 3 AlO 4 crystal. [ Fig. 2 ] A diagram showing powder X-ray diffraction using CuKα rays calculated from the crystal structure of the SrLi 3 AlO 4 crystal. [ Fig. 3] Fig. 3 is a schematic diagram of a surface-mounted LED element using the phosphor of the present embodiment.

1:氧原子 1: Oxygen atom

2:鍶原子 2: Strontium Atom

3:AlO4四面體(中心Al原子) 3: AlO 4 tetrahedron (central Al atom)

4:LiO4四面體(中心Li原子) 4: LiO 4 tetrahedron (central Li atom)

Claims (13)

一種螢光體粒子,係將具有Sr(Li 1+x,Al 3-x)(O 2xN 4-2x):Eu(0<X≦2)表示之組成之螢光體之結晶相作為核心, 該核心之表面係藉由具有聚矽氧烷鍵之層被覆。 A phosphor particle having a crystal phase of a phosphor having a composition represented by Sr(Li 1+x ,Al 3-x )(O 2x N 4-2x ):Eu(0<X≦2) as a core , the surface of the core is covered by a layer having polysiloxane bonds. 如請求項1之螢光體粒子,其中,該具有聚矽氧烷鍵之層係使用有機矽化合物而成。The phosphor particle of claim 1, wherein the layer having a polysiloxane bond is formed by using an organosilicon compound. 如請求項2之螢光體粒子,其中,該有機矽化合物,係選自由四乙氧矽烷(TEOS)、四甲氧矽烷(TMOS)、甲基三乙氧矽烷(MeTEOS)、及苯基三乙氧矽烷(PhTEOS)構成之群組中之1種或2種以上。The phosphor particle of claim 2, wherein the organosilicon compound is selected from the group consisting of tetraethoxysilane (TEOS), tetramethoxysilane (TMOS), methyltriethoxysilane (MeTEOS), and phenyl triethoxysilane One or more of the group consisting of ethoxysilanes (PhTEOS). 如請求項1或2之螢光體粒子,其中,發光峰部波長為550~600nm,半峰全幅值為70nm以下。The phosphor particle according to claim 1 or 2, wherein the wavelength of the emission peak is 550 to 600 nm, and the full width at half maximum is 70 nm or less. 如請求項1或2之螢光體粒子,其中,該具有聚矽氧烷鍵之層之平均厚度為1~200nm。The phosphor particle of claim 1 or 2, wherein the layer having polysiloxane bonds has an average thickness of 1-200 nm. 如請求項1或2之螢光體粒子,其中,該螢光體粒子之粒徑(D50)為1~100μm。The phosphor particle according to claim 1 or 2, wherein the particle size (D50) of the phosphor particle is 1-100 μm. 如請求項1或2之螢光體粒子,其中,在溫度50℃、相對溼度80%之環境下經保存7小時後之該螢光體粒子之外部量子粒子效率,相對於在該環境下保存前之該螢光體粒子之外部量子粒子效率為30%以上。The phosphor particle of claim 1 or 2, wherein the external quantum particle efficiency of the phosphor particle after being stored in an environment with a temperature of 50° C. and a relative humidity of 80% for 7 hours is higher than that stored in the environment The external quantum particle efficiency of the phosphor particles was above 30%. 一種發光裝置,具備如請求項1至7中任一項之螢光體粒子,及發光光源。A light-emitting device comprising the phosphor particles according to any one of claims 1 to 7, and a light-emitting light source. 一種圖像顯示裝置,具備如請求項8之發光裝置。An image display device including the light-emitting device of claim 8. 一種螢光體粒子之製造方法,具有:將具有Sr(Li 1+x,Al 3-x)(O 2xN 4-2x):Eu(0<X≦2)表示之組成之螢光體之結晶相作為核心,在該核心之表面形成具有聚矽氧烷鍵之層之步驟。 A method for producing phosphor particles, comprising: a phosphor having a composition represented by Sr(Li 1+x ,Al 3-x )(O 2x N 4-2x ):Eu(0<X≦2) The step of forming a layer having polysiloxane bonds on the surface of the crystalline phase as a core. 如請求項10之螢光體粒子之製造方法,其中,在該步驟中,使有機矽化合物接觸該螢光體並進行熱處理,藉此在該螢光體之結晶相之表面形成該具有聚矽氧烷鍵之層。The method for producing phosphor particles according to claim 10, wherein, in the step, an organosilicon compound is brought into contact with the phosphor and subjected to heat treatment, thereby forming the polysilicon compound on the surface of the crystal phase of the phosphor layer of oxane bonds. 如請求項11之螢光體粒子之製造方法,其中,該有機矽化合物中之Si原子之含量,相對於該核心100質量份為0.001~10質量份。The method for producing phosphor particles according to claim 11, wherein the content of Si atoms in the organosilicon compound is 0.001 to 10 parts by mass relative to 100 parts by mass of the core. 如請求項11或12之螢光體粒子之製造方法,其中,該熱處理之溫度為100~500℃。The method for producing phosphor particles according to claim 11 or 12, wherein the temperature of the heat treatment is 100 to 500°C.
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