TW202230557A - Semiconductor manufacturing system, measuring device and semiconductor manufacturing method - Google Patents

Abstract

A semiconductor manufacturing system includes an etching tool and a measuring device. The etching tool is configured to carry a first wafer, and configured to process a first back of the first wafer. The measuring device is arranged in the etching tool, and the measuring device includes a camera and a controller. The camera is configured to shoot an image for the first back of first wafer. The controller is configured to receive the image to determine whether the first back, which is processed by the etching tool, is over-etching, and generate an over-etching signal. A measuring device and a semiconductor manufacturing method are also disclosed herein.

Description

Semiconductor manufacturing system, measuring device, and semiconductor manufacturing method

The present disclosure relates to a semiconductor fabrication system, and more particularly, to a system for detecting over-etching.

During semiconductor manufacturing, wafer cleaning techniques are used to remove unnecessary materials that may reduce yield for subsequent semiconductor processes. Wafer cleaning steps are repeated multiple times throughout the manufacturing process to remove particles, contaminants, and residues. Wet etch technology is used for selective residue removal, wafer cleaning and etching applications.

However, etch cleaner acid can contaminate other fluids during recycling. If the backside of the wafer is etched with contaminated liquid, resulting in over-etching, the subsequent yellow light process on the front side of the wafer will cause the exposure machine to fail to focus smoothly because the backside of the wafer is not flat and the wafer cannot be placed flat, making the process impossible. Therefore, it is an urgent problem to be solved in the art to immediately find that the backside of the wafer is over-etched.

One embodiment of the present disclosure is directed to a semiconductor fabrication system including an etching tool and a measurement device. The etching tool is used for carrying a first wafer and for processing a first back surface of the first wafer. The measuring device is arranged in the etching tool. The measuring device includes a camera and a controller. The camera is used for capturing an image of the first back surface of the first wafer. The controller is used for receiving the image to determine whether the first back surface processed by the etching tool is over-etched, and generates an over-etching signal.

An embodiment of the present disclosure relates to a measurement device disposed in an etching tool. The etching tool is used for processing a first back surface of a first wafer, and the measuring device includes a camera and a controller. The camera is used for capturing an image of the first back surface of the first wafer. The controller is used for receiving the image to determine whether the first back surface processed by the etching tool is over-etched, and generates an over-etching signal.

An embodiment of the present disclosure relates to a semiconductor manufacturing method, the semiconductor manufacturing method includes: carrying a first wafer by an etching tool and processing a first back surface of the first wafer; for the first wafer processed by the etching tool Shooting an image of the first backside of a wafer; judging whether the first backside processed by the etching tool is over-etched according to the image; and if the first backside is over-etched, controlling the etching tool to stop processing a first backside of a second wafer Two backsides, wherein the second backside of the second wafer is processed by the etch tool after the first wafer is processed by the etch tool.

The following disclosure provides many different embodiments or examples for implementing different features of the provided subject matter. Specific examples of components and arrangements are described below to simplify the content of one embodiment of the present disclosure. Of course, these are only examples and are intended to be limiting. For example, forming a first feature over or over a second feature in the following description may include embodiments in which the first and second features are formed in direct contact, and may also include embodiments that may be between the first and second features Embodiments where additional features are formed such that the first feature and the second feature may not be in direct contact. Additionally, an embodiment of the present disclosure may repeat reference numerals and/or letters in various instances. This repetition is for the purpose of simplicity and clarity, and does not in itself represent a relationship between the various embodiments and/or configurations discussed.

The terms and specific terms used in the embodiments of this disclosure have their ordinary meanings in the art. The examples used in the embodiments of the present disclosure, including any examples discussed herein, are merely examples, and do not limit the scope and meaning of the terms of the embodiments of the present disclosure or any examples. Similarly, this disclosure is not limited to the various embodiments in this disclosure.

As used herein, "coupling" or "connection" may refer to two or more elements in direct physical or electrical contact with each other, or in indirect physical or electrical contact with each other, or two or more elements Elements interact or act on each other.

For example, during the manufacturing process of semiconductor wafers, contaminants (eg, particles, metal impurities, organic contaminants, and naturally occurring oxide layers) on the wafers can reduce the yield of the produced wafers. Therefore, before or during the semiconductor process (eg, exposure, etching, ion implantation, heat treatment, etc.) on the wafer, during the process, the staff will clean the front side of the wafer used for making components by wet cleaning. Or unwanted contaminants and films on the backside of the wafer. And, for different contaminants, the machine uses different solutions to clean the wafers.

Refer to Figure 1. FIG. 1 is a block diagram illustrating a semiconductor fabrication system 100 in accordance with some embodiments of the present disclosure. In some embodiments, the semiconductor fabrication system 100 includes an etching tool 120 , a measurement device 140 and an arithmetic device 160 . The etching tool 120 is used to clean the wafer 400, eg, wet cleaning to remove unnecessary contaminants and films on the front or back of the wafer. The measuring device 140 measures the etched wafer 400 and determines whether the wafer 400 is abnormal. If the measuring device 140 determines that the wafer 400 is abnormal, the measuring device 140 transmits a signal to the computing device 160 in the factory. The computing device 160 controls the etching tool 120 to stop working. In some embodiments, the computing device 160 is a desktop computer, a workstation, a notebook computer, a tablet computer, an industrial computer, a server, or a combination thereof.

In some embodiments, the etch tool 120 operates at room temperature and pressure, also referred to as operating in an atmospheric environment. It should be understood that many possible variables and options for the operating environment of the etch tool 120 are within the contemplation and scope of embodiments of this disclosure. For example, in some embodiments, the etch tool 120 operates in a high temperature and low pressure environment (eg, temperatures above room temperature and pressures below atmospheric pressure).

Refer to Figure 2. FIG. 2 is a top view of etching tool 120 according to some embodiments of the present disclosure. In some embodiments, the etching tool 120 includes a loading element 121 , a robotic arm 122 , a robotic arm 123 , a robotic arm 124 , and an etch cleaner 125 . In some embodiments, the robotic arm 122 can move in three axes and rotate at any angle, such as x, y, and z axes of a Cartesian coordinate system. In some embodiments, after another tool (not shown) performs an exposure, etching, ion implantation, or heat treatment process on the wafer 400 in the semiconductor process, the other tool may send the wafer 400 to the etching tool 120 . on the ride element 121. The robotic arm 122 is used to support and transport the wafer 400 to various positions (eg, transport the wafer 400 to the position where the robotic arm 123 is located). The robot arm 123 is used to receive the wafer 400 transferred from the robot arm 122 , and the robot arm 123 can be used to turn the wafer facing, for example, to turn the wafer from face-up to face-down. The robot arm 124 is used for transferring the wafer 400 carried by the robot arm 123 to the etch cleaning machine 125 .

For example, after the front side of the wafer is processed (etching, ion implantation, heat treatment, etc.), not only process products are formed on the front side of the wafer, but also process contaminants or films are left on the back side of the wafer. Therefore, the wafer 400 is sent to the etching tool 120 to clean the backside of the wafer.

In some embodiments, the etch tool 120 is used to clean the backside of the wafer, and the robot arm 122 is used to transfer the wafer originally face-up from the loading element 121 to the robot arm 123 . The robotic arm 123 is used to rotate 180 degrees to flip the wafer. After the robotic arm 123 flips the wafer, the front side of the wafer is turned down and the back side of the wafer is turned up. In one embodiment, the upper two grippers of the four grippers of the robotic arm 124 transfer the wafer from the upper robotic arm 123 to one of the upper two etch cleaners 125 of the plurality of etch cleaners 125 . Correspondingly, the robot arm 124 transfers the wafer from the lower robot arm 123 to one of the lower two etch cleaners 125 of the plurality of etch cleaners 125 using the lower two jaws among the four jaws of the robot arm 124 . The number of the etching cleaners 125 in FIG. 2 is for illustrative purposes only. Various numbers of etch cleaners 125 are within the contemplation and scope of the disclosed embodiments.

The manner in which the etching tool 120 transfers the wafer is only an example, and is not limited thereto. In other embodiments, the etching tool 120 is not limited to include the robot arm 122, the robot arm 123, and the robot arm 124 shown in FIG. 2. For example, the robot arm 123 can directly transfer the wafer to the etching cleaning machine 125, or , the robot arm 122 can directly rotate the wafer and hand it over to the robot arm 124 . Furthermore, the configuration of the etch tool 120 is for example purposes only. Various etch tools 120 are within the contemplation and scope of embodiments of this disclosure. In other embodiments, the etching tool 120 further includes an ultrasonic cleaning device (not shown).

For example, after processing the front side of the wafer, contamination appears on the back side of the wafer. The etching tool 120 is used to etch the backside of the wafer with nitric acid (HNO ₃ ). However, when the used etching cleaning machine 125 recovers the etching solution by centrifugal force, nitric acid (HNO ₃ ) leaks to a recovery layer belonging to another etching solution. Using a contaminated or wrongly proportioned etchant will increase or decrease the etch rate for cleaning the material on the backside of the wafer. If the backside of the wafer is over-etched due to the increased etching rate, the backside of the wafer will be uneven. When the yellow light process is performed on the frontside of the wafer, the wafer cannot be placed normally due to the uneven backside of the wafer, causing the exposure machine to fail. Focus normally.

Refer to Figure 3. FIG. 3 illustrates a cross-sectional view of the etch cleaner 125 in the etch tool 120 according to some embodiments of the present disclosure. In some embodiments, etch cleaner 125 includes chuck CHK, distributor DSP1, distributor DSP2, distributor DSP3, distributor DSP4, recovery layer DL1, recovery layer DL2, recovery layer DL3, tank TANK1, tank TANK2 , Drain duct DRN1 and Drain duct DRN2. The chuck CHK is used to place the wafer. The distributor DSP1 is used for injecting nitrogen gas to dilute the gas generated by the etching cleaning machine 125 to clean the wafer, and the excess gas is discharged through the side surface or the drain pipe DRN1. The dispenser DSP2 is used to inject DI water into the wafer on the chuck CHK. The dispenser DSP3 is used to inject nitric acid (HNO ₃ ) to the wafer on the chuck CHK. The dispenser DSP4 is used to inject hydrofluoric acid (HF) to the wafer on the chuck CHK. The staff operating the etching tool 120 can inject different solutions to clean the backside of the wafer according to the target film to be cleaned on the backside of the wafer. Chuck CHK is used to move up and down to maintain the same height as the recovery layer to which a particular solution belongs. For example, the distributor DSP2 injects deionized water (DI water), the chuck CHK is maintained at the height of the recovery layer DL1 and continues to rotate through centrifugal force to throw the deionized water (DI water) into the recovery layer DL1 to discharge the deionized water through the drain pipe DRN2 water (DI water). For example, the distributor DSP3 is used to inject nitric acid (HNO ₃ ), the chuck CHK is maintained at the height of the recovery layer DL2 and continues to rotate through centrifugal force to throw the nitric acid (HNO ₃ ) to the recovery layer DL2 to recover the nitric acid (HNO ₃ ) to the storage tank TANK1, so that nitric acid (HNO ₃ ) can be used for the next cleaning procedure. For example, the distributor DSP4 is used to inject hydrofluoric acid (HF), the chuck CHK is maintained at the height of the recovery layer DL3 and continuously rotates to throw the hydrofluoric acid (HF) to the recovery layer DL3 through centrifugal force to recover the hydrofluoric acid (HF) to tank TANK2 so that hydrofluoric acid (HF) can be used for the next cleaning procedure. However, when the chuck CHK is maintained at the height of the recovery layer DL2 and continues to rotate, the nitric acid (HNO ₃ ) on the chuck CHK may leak nitric acid (HNO ₃ ) to the recovery layer through the gap between the chuck CHK and the recovery layer DL2 DL3, resulting in tank TANK2 belonging to hydrofluoric acid (HF) containing hydrofluoric acid (HF) and nitric acid ( _HNO3 ). Due to the hydrofluoric acid (HF) mixed with nitric acid (HNO ₃ ) in the storage tank TANK2, the etching rate of the hydrofluoric acid (HF) in the storage tank TANK2 is affected. It should be noted that the solutions used (eg, deionized water (DI water) and hydrofluoric acid (HF)) are examples and not limiting. In other embodiments, the worker operating the etch tool ₁₂₀ cleans the contaminants on the backside of the wafer through a solution such as ammonia ( _NH4OH ) or _hydrogen peroxide (H2O2).

In a common practice, the staff of the maintenance machine regularly measure the thickness of the film on the unetched wafer and the etched wafer to confirm whether the etch rate of the recovered etchant is within the normal range. However, staff regularly measuring the etch rate cannot immediately confirm whether the etchant has been contaminated with other solutions. If the etchant is contaminated and not detected in time, the number of failed wafers can be significant.

Compared with the above-mentioned method, in the embodiment of the present invention, the measuring device 140 is disposed in the etching tool 120 to judge whether the backside of the wafer is over-etched on the image of the backside of the etched wafer. Since the surface of the overetched wafer is uneven, the color reflected on the wafer is uneven. The measuring device 140 determines whether the color difference is too large according to the image of the backside of the wafer, so as to immediately detect whether the wafer is over-etched. The method of calculating the color difference on the backside of the wafer will be further described in conjunction with FIG. 8 in the following embodiments.

Refer to Figure 4. FIG. 4 illustrates a block diagram of a semiconductor fabrication system 100 according to some embodiments of the present disclosure. In some embodiments, the measurement device 140 includes a controller 141 , a camera 142 , a light-emitting element 143 , a relay circuit 144 , a wafer sensor 145 and a rotation sensor 146 . The controller 141 is used to control the camera 142 to continuously shoot. The camera 142 is used to continuously transmit the image signal IS to the controller 141, and the controller 141 determines whether the color is abnormal according to the image signal IS of the backside of the wafer. When the camera 142 needs to shoot, the controller 141 also controls the light-emitting element 143 to continuously emit light, so that the camera 142 can receive enough light from the backside of the wafer. The wafer sensor 145 and the rotation sensor 146 are used to sense whether the wafer has reached the measurement position. When the wafer reaches the measurement position, the relay circuit 144 sends a corresponding signal to control the controller 141 to judge the captured image signal IS. The sensing methods of the wafer sensor 145 and the rotation sensor 146 will be further described with reference to FIG. 6 in subsequent embodiments. In other embodiments, the wafer sensor 145 and the rotation sensor 146 can be integrated and disposed on a specific robotic arm (eg, one of the robotic arm 123 , the robotic arm 124 or the robotic arm 125 ) of the etching tool 120 , and coupled together Connected to the relay circuit 144 in the measuring device 140 . In another embodiment, the wafer sensor 145 , the rotation sensor 146 and the relay circuit 144 can be integrated in the etching tool 120 , and the relay circuit 144 is coupled to the controller 141 in the measurement device 140 .

Please also refer to Figure 5. FIG. 5 shows a schematic diagram of a measurement device 140 and an etching tool 120 according to some embodiments of the present disclosure. In some embodiments, after the wafer is etched, the measuring device 140 is used to determine whether the wafer is over-etched on the backside of the wafer. The robot arm 124 is used to transfer the etched wafers from the etch cleaner 125 to the robot arm 123 . The camera 142 is disposed below the robotic arm 123 . The robotic arm 123 rotates 180 degrees to flip the wafer. After the robot arm 123 flips the wafer, the front side of the wafer is up and the back side of the wafer is down, so that the camera 142 can photograph the back side of the wafer. The installation position of the measuring device 140 is only an example, and is not limited thereto. In some embodiments, the measuring device 140 is disposed in the etch cleaning machine 125, and judges the wafer after the wafer is etched. In some other embodiments, the measuring device 140 is disposed beside the robot arm 122 and judges the wafer after the wafer is transferred from the robot arm 123 to the robot arm 122 .

The configuration of the elements in the measurement device 140 described above is for illustrative purposes only. The configuration of elements in the various measurement devices 140 are within the contemplation and scope of embodiments of this disclosure. For example, in various embodiments, when the camera 142 and the light-emitting element 143 are disposed in the robot arm 123, the robot arm 122, the etching cleaning machine 125 or a combination thereof, the controller 141, the relay circuit 144 or a combination thereof are also arranged Within the robotic arm 123, the robotic arm 122, the etching cleaning machine 125 or a combination thereof.

Please refer to Figure 6A and Figure 6B together. 6A and 6B illustrate schematic diagrams of the robotic arm 123 in the etching tool 120 according to some embodiments of the present disclosure. As shown in FIG. 6A , in some embodiments, the wafer sensor 145 is disposed in the robot arm 123 , and is used for sensing whether the robot arm 123 is carrying a wafer through light. When the robot arm 123 rides the wafer, the position of the wafer will block the light entering path of the wafer sensor 145, so that the light sensed by the wafer sensor 145 decreases. At this time, the wafer sensor 145 can generate Wafer sensing signal WS. The rotation sensor 146 is disposed beside the robot arm 123 , and the rotation sensor 146 is used to sense whether the robot arm 123 is rotated to an angle. As shown in FIG. 6B, when the robotic arm 123 rotates 180 degrees, the baffle PL in the robotic arm 123 rotates with the robotic arm 123, and finally covers the rotation sensor 146, so that the rotation sensor 146 senses The light falls and the rotation sensing signal RS is generated. The relay circuit 144 is electrically connected to the controller 141 for receiving the wafer sensing signal WS and the rotation sensing signal RS. When the robotic arm 123 carries the wafer and rotates 180 degrees so that the backside of the wafer faces down, the backside of the wafer is within the shooting range of the camera 142 . Correspondingly, when the relay circuit 144 receives the wafer sensing signal WS and the rotation sensing signal RS at the same time, the relay circuit 144 sends a control signal to trigger the controller 141 to determine whether the backside of the wafer is over-etched according to the image signal IS received from the camera 142 . . When the controller 141 determines that the backside of the wafer is over-etched, the controller 141 generates an over-etch signal OES. The operation of the relay circuit 144 will be further described in conjunction with FIG. 7A in the following embodiments.

Please refer to Figure 4. The computing device 160 includes a computer 162 and a host computer 163 . The computer 162 is used for receiving and storing the image signal IS from the controller 141 , and receiving the over-etching signal OES to transmit to the host 163 . When the host 163 receives the over-etching signal OES indicating that the etching solution has been contaminated, using the contaminated etching solution to clean the backside of other wafers may cause excessive etching or damage to the wafers. Therefore, the host 163 is used to control each of the plurality of etch cleaners 125 in the etch tool 120 to immediately stop cleaning the backside of the wafer. In other embodiments, the host 163 is used to control each of the plurality of etching cleaners 125 in the etching tool 120 to stop working after cleaning the current wafer. In other embodiments, the host 163 is used to control one of the plurality of etching cleaners 125 in the etching tool 120 to stop working.

In one embodiment, it is assumed that the upper and lower robotic arms 123 of the etching tool 120 receive their respective wafers synchronously, and when the two wafers are turned over for measurement, in some embodiments, the relay circuit 144 is used to detect Whether one of the wafers in one of the robotic arms 123 (for example, the upper robotic arm 123 or the lower robotic arm 123 ) has reached the measurement position, when the relay circuit 144 determines that one of the wafers has reached the measurement position, it can be estimated that two When the respective wafers of the robotic arms 123 have reached the measurement position, the controller 141 can be triggered to measure the two wafers in the upper and lower robotic arms 123 .

Refer to Figures 7A and 7B. FIGS. 7A and 7B illustrate circuit diagrams of the relay circuit 144 in the measurement device 140 according to some embodiments of the present disclosure. In some embodiments, as shown in FIG. 7A, the relay circuit 144 includes a relay unit 144a and a relay unit 144b. The relay circuit 144 is connected to the ground terminal GND and the 24V DC output terminal +24VDC in response to signals from the wafer sensor 145 and the rotation sensor 146 . In some embodiments, the relay unit 144a and the relay unit 144b are solid state relays. When the relay unit 144a does not receive the wafer sensing signal WS, the relay unit 144a is turned off. As shown in FIG. 7B, when the relay unit 144a receives the wafer sensing signal WS, the light emitting diode of the relay unit 144a generates light, and the optocoupler of the relay unit 144a is turned on. Similarly, when the relay unit 144b does not receive the rotation sensing signal RS, the relay unit 144b is non-conductive. As shown in FIG. 7B , when the relay unit 144b receives the rotation sensing signal RS, the light emitting diode of the relay unit 144b generates light, and the optocoupler of the relay unit 144b is turned on. When the optocoupler of the relay unit 144a and the optocoupler of the relay unit 144b are turned on at the same time, the relay circuit 144 is used to trigger the controller 141 to judge the color difference of the backside of the wafer. In other embodiments, the relay unit 144a and the relay unit 144b are not limited to solid state relays. The relay unit 144a and the relay unit 144b may be electromagnetic relays, reed relays, or a combination thereof.

In one embodiment, it is assumed that the upper and lower robotic arms 123 of the etching tool 120 do not transfer the wafers synchronously and carry the wafers at different time points. The relay circuit 144 is used for judging whether the wafers on the two robotic arms 123 have reached the measurement position respectively for measurement.

Refer to Figures 7C and 7D. 7C and 7D illustrate circuit diagrams of the relay circuit 144 in the measurement device 140 according to some embodiments of the present disclosure. In one embodiment, the wafer sensor 145 and the wafer sensor 147 are respectively disposed on the upper robot arm 123 in the etching tool 120 and the lower robot arm 123 in the etching tool 120, and the wafer sensor 145 and the wafer sensor 147 are coupled to the relay circuit 144 . The rotation sensor 146 and the rotation sensor 148 are respectively disposed beside the upper robot arm 123 in the etching tool 120 and beside the lower robot arm 123 in the etching tool 120, and the rotation sensor 146 and the rotation sensor 148 are coupled Connected to the relay circuit 144 . As shown in FIG. 7D , the relay unit 144 a is used for receiving the wafer sensing signal WS1 from the wafer sensor 145 . The relay unit 144b is used to receive the rotation sensing signal RS1 from the rotation sensor 146 . The relay unit 144c is used for receiving the wafer sensing signal WS2 from the wafer sensor 147 . The relay unit 144d is used to receive the rotation sensing signal RS2 from the rotation sensor 148 . The above-mentioned receiving the wafer sensing signal WS to turn on the relay unit 144a and receiving the rotation sensing signal RS to turn on the relay unit 144b are also applicable to the wafer sensing signal WS1, the rotation sensing signal RS1, the wafer sensing signal WS2 and the rotation sensing signal The sensing signal RS2 is used, so the manner in which the wafer sensing signal WS1 , the rotation sensing signal RS1 , the wafer sensing signal WS2 , and the rotation sensing signal RS2 make the relay units 144 a , 144 b , 144 c and 144 d turn on is not repeated here. Correspondingly, when the optocoupler of the relay unit 144a and the optocoupler of the relay unit 144b are turned on at the same time, the relay circuit 144 is used to trigger the controller 141 to perform an operation on the back surface of the wafer corresponding to the upper robotic arm 123 in the etching tool 120. Color difference judgment. When the optocoupler of the relay unit 144c and the optocoupler of the relay unit 144d are turned on at the same time, the relay circuit 144 is used to trigger the controller 141 to perform color difference judgment on the back surface of the wafer corresponding to the lower robotic arm 123 in the etching tool 120 .

In the embodiment shown in FIG. 7D, the relay units 144a, 144b are turned on at this time, and the relay units 144c, 144d are not turned on, which can trigger the controller 141 to correspond to the upper robotic arm 123 in the etching tool 120. In addition, the etching tool The wafer of the lower robot arm 123 in 120 has not yet reached the measurement position.

Refer to Figure 8. FIG. 8 illustrates a schematic diagram of the backside of a wafer according to some embodiments of the present disclosure. In some embodiments, the controller 141 calculates the color difference of the backside of the wafer for the calculation range 410 of the backside of the wafer 400 captured by the camera 142 . Specifically, the controller 141 is used to compare the difference between the color of each of all the pixels in the calculation range 410 and the preset average value, and to calculate the difference between each of all the pixels and the preset average value. The difference is summed to obtain a damage value. Therefore, the controller 141 is used to determine whether the damage value is greater than the preset damage threshold. If the result is that the damage value is greater than the preset damage threshold, it means that the wafer is over-etched. In one embodiment, the controller 141 is configured to calculate a preset average value according to the colors of the previous images of the normal wafers to obtain the color of the normal wafers. In one embodiment, the preset damage threshold is adjusted by the detection tolerance. If the detection tolerance is low, the user sets a lower preset damage threshold. Even though the wafer 400 in FIG. 8 does not show any material, it should be understood by those of ordinary skill in the art that the wafer 400 has patterns and/or films on the backside during semiconductor processing.

In other embodiments, the controller 141 is configured to calculate an average value of the color of each of all the pixels in the calculation range 410 and compare the color of each of all the pixels in the calculation range 410 with the average difference of values to calculate the sum of the difference of each of all pixels from the average and the sum is the damage value. Moreover, the controller 141 is configured to determine whether the damage value is greater than the preset damage threshold. If the result is that the damage value is greater than the preset damage threshold, it means that the wafer is over-etched.

Refer to Figure 9. FIG. 9 illustrates a flowchart of a semiconductor fabrication method according to some embodiments of the present disclosure. The method 900 includes steps S1-S7. Steps S1 to S7 may be applied to the block diagram of the semiconductor manufacturing system 100 shown in FIG. 4 , but not limited thereto. For the sake of clarity, the semiconductor manufacturing method of FIG. 9 below is described in conjunction with FIG. 2 , FIG. 5 , FIG. 8 , FIG. 10 , FIG. 11 , and FIG. 12 .

In step S1 , the wafer 400 is placed on the carrier element 121 and transferred to the etching cleaning machine 125 through the robot arm 122 , the robot arm 123 and the robot arm 124 in sequence. The transfer method of the wafer 400 is as described in FIG. 2 , and will not be repeated here. Refer also to Figure 10. FIG. 10 illustrates a cross-sectional view of wafer 400 according to some embodiments of the present disclosure. Thin film 434, thin film 432, and thin film 430 on wafer 400 in Figure 10 are formed of different materials. The etch cleaner 125 performs an etching chemical reaction on the thin film 434 on the wafer 400 .

In some embodiments, the etch cleaner 125 is used to etch the metal on the wafer 400 . In some other embodiments, the etch cleaner 125 is used to etch the alloy on the wafer 400 . In an alternate embodiment, an etch process is used to etch the insulator on wafer 400 . The materials etched by the above etching process are for illustrative purposes only. The materials etched by the various etch cleaners 125 are within the contemplation and scope of embodiments of this disclosure.

In step S2, the controller 141 controls the camera 142 to continuously shoot, and controls the light-emitting element 143 to continuously emit light, so as to increase the brightness of the backside of the wafer. The arrangement positions of the camera 142 and the light-emitting element 143 are as described in FIG. 5 , and will not be repeated here.

In step S3 , the robot arm 124 transfers the wafer 400 to the robot arm 123 . The robotic arm 123 carries the wafer 400 and rotates 180 degrees, so that the back of the wafer 400 faces downward and is located in the photographing range of the camera 142 .

In step S4, the relay circuit 144 triggers the controller 141 to determine whether the backside of the wafer is over-etched on the received image signal IS. The operation method of the relay circuit 144 is as described in FIG. 7A and FIG. 7B, and will not be repeated here. Please also refer to Figure 11. FIG. 11 illustrates a cross-sectional view of a wafer 400 according to other embodiments of the present disclosure. If the controller 141 determines that the wafer 400 is not over-etched (for example, the target film 434 in FIG. 11 has been removed, and the film 432 and the film 430 still exist), the flow goes to step S5. Please also refer to Figure 12. FIG. 12 illustrates a cross-sectional view of wafer 400 according to other embodiments of the present disclosure. If the controller 141 determines that the wafer 400 is over-etched (for example, the target film 434 in FIG. 12 has been removed, and the films 432 and 430 are also partially removed unexpectedly, the backside of the wafer is uneven and the image of the backside of the wafer has color difference), the flow goes to step S6.

In other embodiments, the thin film 434 , the thin film 432 and the thin film 430 on the wafer 400 are sequentially and flatly removed by using different etching solutions for different materials, and the controller 141 determines that the backside of the wafer is not over-etched, and the flow goes to step S5 .

In step S5, the controller 141 does not generate the over-etching signal OES. Therefore, the host 163 does not control the etching tool 120 to stop working. The etch cleaner 125 in the etch tool 120 continues the current cleaning procedure.

In step S6 , the controller 141 generates the over-etching signal OES and transmits it to the computer 162 . The computer 162 transmits the over-etch signal OES to the host 163 . The host 163 controls the etching tool 120 to stop working according to the over-etching signal OES.

In step S7, the etching solution in the recovery layer and the pipeline is removed, and new etching solution is replaced several times to ensure that the etching solution in the recovery layer and the pipeline is not mixed with other solutions.

The foregoing outlines features of several embodiments so that those skilled in the art may better understand aspects of the disclosure. Those skilled in the art should appreciate that the present disclosure may readily be used as a basis for designing or modifying other processes and structures for carrying out the same purposes and/or achieving the same advantages of the embodiments described herein. Those skilled in the art should also realize that such equivalent structures do not depart from the spirit and scope of the present disclosure, and that various changes, substitutions and alterations herein can be made without departing from the spirit and scope of the present disclosure .

100: Semiconductor Manufacturing Systems 120: Etching Tools 121: Riding Components 122: Robotic Arm 123: Robotic Arm 124: Robotic Arm 125: Etch cleaning machine 140: Measuring device 141: Controller 142: Camera 143: Light-emitting element 144: Relay circuit 144a: Relay unit 144b: Relay unit 144c: Relay unit 144d: Relay unit 145: Wafer Sensor 146: Rotation Sensor 147: Wafer Sensor 148: Rotation Sensor 160: Computing Device 162: Computer 163: host 400: Wafer 410: Calculated range 430: Film 432: Film 434: Film CHK: Chuck DSP1: Distributor DSP2: Distributor DSP3: Distributor DSP4: Splitter DL1: recycling layer DL2: recycling layer DL3: recycling layer TANK1: Tank TANK2: Tank DRN1: Excretory duct DRN2: Excretory duct IS: image signal WS: Wafer Sensing Signal RS: Rotation Sensing Signal WS1: Wafer Sensing Signal WS2: Wafer Sensing Signal RS1: Rotation Sensing Signal RS2: Rotation Sensing Signal OES: Over Etch Signal PL: Baffle GND: ground terminal +24VDC: 24V DC output S1: Step S2: Step S3: Step S4: Steps S5: Steps S6: Steps S7: Steps

Aspects of the disclosed embodiments are best understood from the following detailed description when read in conjunction with the accompanying drawings. It should be noted that in accordance with standard practice in the industry, the various features are not drawn to scale. In fact, the dimensions of the various features may be arbitrarily increased or reduced for clarity of discussion. FIG. 1 is a block diagram illustrating a semiconductor fabrication system according to some embodiments of the present disclosure. FIG. 2 is a top view illustrating an etch tool according to some embodiments of the present disclosure. FIG. 3 shows a cross-sectional view of an etch cleaner in an etch tool according to some embodiments of the present disclosure. 4 illustrates a block diagram of a semiconductor fabrication system according to some embodiments of the present disclosure. FIG. 5 shows a schematic diagram of a measurement device and an etching tool according to some embodiments of the present disclosure. 6A and 6B illustrate schematic diagrams of a robotic arm in an etching tool according to some embodiments of the present disclosure. 7A and 7B illustrate circuit diagrams of relay circuits in a measurement device according to some embodiments of the present disclosure. 7C and 7D illustrate circuit diagrams of relay circuits in a measurement device according to some embodiments of the present disclosure. FIG. 8 illustrates a schematic diagram of the backside of a wafer according to some embodiments of the present disclosure. FIG. 9 illustrates a flowchart of a semiconductor fabrication method according to some embodiments of the present disclosure. 10 illustrates a cross-sectional view of a wafer according to some embodiments of the present disclosure. FIG. 11 illustrates a cross-sectional view of a wafer according to other embodiments of the present disclosure. FIG. 12 shows a cross-sectional view of a wafer according to other embodiments of the present disclosure.

Domestic storage information (please note in the order of storage institution, date and number) none Foreign deposit information (please note in the order of deposit country, institution, date and number) none

100: Semiconductor Manufacturing Systems

120: Etching Tools

140: Measuring device

160: Computing Device

400: Wafer

Claims (10)

A semiconductor manufacturing system comprising: an etching tool for carrying a first wafer and for processing a first backside of the first wafer; and A measuring device, the measuring device is arranged in the etching tool, wherein the measuring device comprises: a camera for capturing an image of the first backside of the first wafer; and a controller for receiving the image to determine whether the first back surface processed by the etching tool is over-etched, and to generate an over-etch signal. The semiconductor manufacturing system of claim 1, further comprising: a host, the host controls the etching tool to stop processing a second back surface of a second wafer according to the over-etching signal; Wherein the second back side of the second wafer is processed by the etching tool after the first wafer is processed by the etching tool. The semiconductor manufacturing system of claim 1, further comprising: a wafer sensor for sensing whether the first wafer is carried by a robotic arm next to the measuring device through light, If the first wafer is carried by the robotic arm, the wafer sensor generates a wafer sensing signal; a rotation sensor for sensing whether the robotic arm rotates to an angle, wherein when the robotic arm rides the first wafer and rotates the first wafer to the angle, the first The back is a shooting range of the camera, If the robotic arm rotates to the angle, the rotation sensor generates a rotation sensing signal; and a relay circuit electrically connected to the controller and used for receiving the wafer sensing signal and the rotation sensing signal, If the relay circuit receives both the wafer sensing signal and the rotation sensing signal, the relay circuit controls the controller to determine whether the first wafer is over-etched. The semiconductor manufacturing system of claim 1, wherein The etching tool is used for etching the first back surface of the first wafer to remove a plurality of thin films formed on the first back surface caused by processing a first front surface of the first wafer. The semiconductor manufacturing system of claim 4, wherein The controller is configured to calculate a plurality of differences between the color of each of the plurality of pixels on the first back surface in the image and an average value, and determine whether the first back surface is over-etched according to the differences; The average value is calculated by the colors of a plurality of normal wafers. The semiconductor manufacturing system of claim 1, further comprising: a light-emitting element for continuously emitting light to the first wafer to reflect light to the camera. A measuring device is arranged in an etching tool, the etching tool is used for processing a first back surface of a first wafer, the measuring device comprises: a camera for capturing an image of the first backside of the first wafer; and a controller for receiving the image to determine whether the first back surface processed by the etching tool is over-etched, and to generate an over-etch signal. A semiconductor manufacturing method, comprising: A first wafer is carried by an etching tool, and a first back surface of the first wafer is processed; Taking an image of the first backside of the first wafer processed by the etching tool; Determine whether the first back surface processed by the etching tool is over-etched according to the image; and If the first backside is over-etched, controlling the etching tool to stop processing a second backside of a second wafer after the first wafer is processed by the etching tool processed by the etching tool. The semiconductor manufacturing method of claim 8, wherein processing the first backside of the first wafer comprises: The first back surface is etched by the etching tool to remove a plurality of thin films formed on the first back surface during processing of a first front surface of the first wafer. The semiconductor manufacturing method of claim 8, wherein determining whether the first back surface is over-etched comprises: calculating a plurality of differences between the color of each of the plurality of pixels of the first backside in the image and an average value, and determining whether the first backside is over-etched according to the differences, wherein the average value is obtained by Calculated from the colors of a plurality of normal wafers.

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