TW202228874A - Wrapping mold for shearing and machining and manufacturing method thereof capable of precisely machining material having high hardness and thinner board thickness - Google Patents

Wrapping mold for shearing and machining and manufacturing method thereof capable of precisely machining material having high hardness and thinner board thickness Download PDF

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TW202228874A
TW202228874A TW111102139A TW111102139A TW202228874A TW 202228874 A TW202228874 A TW 202228874A TW 111102139 A TW111102139 A TW 111102139A TW 111102139 A TW111102139 A TW 111102139A TW 202228874 A TW202228874 A TW 202228874A
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film
mold
film thickness
shearing
hard
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TW111102139A
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森下佳奈
進野大樹
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日商日立金屬股份有限公司
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Abstract

The invention provides a wrapping mold for shearing and machining and its manufacturing method for a material, which has high hardness and thinner board thickness, having high durability in the shearing and machining. In the wrapping mold for shearing and machining and its manufacturing method, the wrapping mold for shearing and machining has a hard film comprising AlCrSi nitride on the surface of the mold base material, and the film thickness of the hard film is 0.3 [mu]m to 2.0 [mu]m. The ratio for the film thickness of the hard film of the edge portion of the wrapping mold relative to the film thickness of the hard film of the plane portion of the wrapping mold is 0.6 to 1.4.

Description

剪切加工用包覆模具及其製造方法Covering die for shearing and method for producing the same

本發明是一種剪切加工用包覆模具及其製造方法。The present invention relates to a covering die for shearing and a manufacturing method thereof.

以往,鍛造、衝壓加工等塑性加工中使用了以冷衝模鋼、熱衝模鋼、高速鋼等工具鋼所代表的鋼、或超硬合金等為母材的模具,任一模具在作業面上均要求耐磨耗性。作為提高該耐磨耗性的有效方法,已知有使用物理蒸鍍法(physical vapor deposition,PVD)或化學蒸鍍法(chemical vapor deposition,CVD)在模具的作業面上包覆硬質皮膜。Conventionally, for plastic working such as forging and stamping, dies using steels represented by tool steels such as cold die steel, hot die steel, and high-speed steel, or cemented carbide as the base material are used. Wear resistance is required. As an effective method for improving the wear resistance, it is known to coat a hard film on the working surface of a mold using a physical vapor deposition (PVD) or chemical vapor deposition (CVD) method.

在硬質皮膜中,AlCr的氮化物(AlCrN)或AlCrSi的氮化物(AlCrSiN)的皮膜即使在1000℃以上的高溫下亦具有高耐久性,因此作為模具用途一直以來提出了各種方案。例如,如專利文獻1所示,申請人提出了一種塑性加工用包覆模具,其目的在於大幅改善模具作業面的耐擦傷性、耐磨耗性,其特徵在於,在模具基材的表面包覆包含AlxCrySiz的氮化物(其中,x、y、z表示原子比,x+y+z=100,且x、y、z≠0),且根據日本工業標準(Japanese Industrial Standard,JIS)-B-0601(2001)的表面粗糙度以算術平均粗糙度Ra計為0.06 μm以下,最大高度Rz為1.0 μm以下的硬質皮膜。另外,在專利文獻1中,亦提出了一種塑性加工用包覆模具的製造方法,其是藉由使用靶的濺鍍法,在模具基材的表面包覆包含AlxCrySiz的氮化物(其中,x、y、z表示原子比,x+y+z=100,且x、y、z≠0)的硬質皮膜的方法,其特徵在於,使投入該靶的濺鍍功率為5 kW以上,使施加於模具基材的偏置電壓向-100 V以上的負側增大。 [現有技術文獻] [專利文獻] Among the hard coatings, AlCr nitride (AlCrN) or AlCrSi nitride (AlCrSiN) coatings have high durability even at high temperatures of 1000°C or higher, so various proposals have been proposed for mold applications. For example, as shown in Patent Document 1, the applicant has proposed a covered mold for plastic working, which aims to significantly improve the scratch resistance and wear resistance of the mold working surface, characterized in that the surface of the mold base is covered with Nitride containing AlxCrySiz (where x, y, z represent atomic ratio, x+y+z=100, and x, y, z≠0), and according to Japanese Industrial Standard (JIS)-B The surface roughness of -0601 (2001) is 0.06 μm or less in terms of arithmetic mean roughness Ra, and the maximum height Rz is a hard coating of 1.0 μm or less. In addition, Patent Document 1 also proposes a method for producing a covering mold for plastic working, which covers the surface of a mold base material with a nitride (wherein x includes AlxCrySiz) by a sputtering method using a target. , y, z represent atomic ratios, x+y+z=100, and x, y, z≠0) of the hard coating method, characterized in that the sputtering power input into the target is 5 kW or more, The bias voltage on the mold base material increases toward the negative side above -100 V. [Prior Art Literature] [Patent Literature]

[專利文獻1]日本專利特開2010-284710號[Patent Document 1] Japanese Patent Laid-Open No. 2010-284710

[發明所欲解決之課題] 在必須使被加工材料的剪切面的品質為高品質的精密剪切加工中,為了確保剪切面的品質,需要根據材質或板厚來精密地控制上模(衝頭)與下模(衝模)的間隙。其中,在對數十μm~數百μm的薄板材料進行剪切加工的情況下,若不以μm為單位設定適當的間隙,則無法獲得所希望的剪切面,容易發生產品不良。要求此種精密性,另一方面,如非晶軟磁性材料或卡遜(corson)合金等般,被加工材料高強度化,擔心模具的早期破損。另外,為了進行精密且微細的剪切加工,模具尺寸亦小型化,在先前的成膜方法中,有時亦難以在小型的模具上均勻地對硬質皮膜進行成膜。專利文獻1是可實現耐磨耗性提高的優異的發明,但並沒有涉及對所述那樣的薄且高硬度的材料進行加工的情況、或使用小型包覆模具時產生的問題,留有研究的餘地。 因此,本發明的目的在於提供一種剪切加工用包覆模具及其製造方法,該剪切加工用包覆模具能夠在高硬度且板厚薄的材料的剪切加工中高精度地進行加工,且亦具有高耐久性。 [解決課題之手段] [The problem to be solved by the invention] In precision shearing, in which the quality of the shear surface of the material to be processed must be high-quality, in order to ensure the quality of the shear surface, it is necessary to precisely control the upper die (punch) and lower die ( die) clearance. Among them, when shearing a sheet material of several tens of μm to several hundreds of μm, unless an appropriate gap is set in μm units, a desired sheared plane cannot be obtained, and product defects are likely to occur. Such precision is required, but, on the other hand, the high strength of the material to be processed, such as an amorphous soft magnetic material or a corson alloy, may cause early breakage of the mold. In addition, in order to perform precise and fine shearing, the size of the mold is also reduced, and in the conventional film forming method, it may be difficult to uniformly form a hard film on a small mold. Patent Document 1 is an excellent invention that can improve wear resistance, but it does not deal with the problems that arise when processing a thin and high-hardness material as described above, or when using a small-sized covering mold, and research remains. 's room. Therefore, an object of the present invention is to provide a covering die for shearing, which can be processed with high precision in shearing of a material with high hardness and a thin plate thickness, and a method for producing the same, and also a method for producing the same. Has high durability. [Means of Solving Problems]

本發明是鑒於所述課題而成者。 即,本發明的一形態是一種剪切加工用包覆模具,在模具基材的表面具有包含AlCrSi的氮化物的硬質皮膜,且所述剪切加工用包覆模具中,所述硬質皮膜的膜厚為0.3 μm~2.0 μm,所述包覆模具的邊緣部的硬質皮膜的膜厚相對於所述包覆模具的平面部的硬質皮膜的膜厚的比率為0.60~1.40。 The present invention has been made in view of the above-mentioned problems. That is, one aspect of the present invention is a sheathing mold for shearing, which has a hard film containing a nitride of AlCrSi on a surface of a mold base material, and wherein the sheathing mold for shearing has a surface of the hard film. The film thickness is 0.3 μm to 2.0 μm, and the ratio of the film thickness of the hard film covering the edge portion of the mold to the film thickness of the hard film covering the flat surface portion of the mold is 0.60 to 1.40.

本發明的另一形態是一種剪切加工用包覆模具的製造方法,在模具基材的表面包覆包含AlCrSi的氮化物的硬質皮膜,且所述剪切加工用包覆模具的製造方法中,所述硬質皮膜使用高輸出脈衝濺鍍以0.3 μm~2.0 μm的膜厚包覆在模具基材上,在所述高輸出脈衝濺鍍時使用N 2與Ar的混合氣體,N 2氣體流量相對於Ar氣體流量之比為0.65~1.60。 較佳為所述高輸出脈衝濺鍍的最大功率為50 kW~130 kW。 [發明的效果] Another aspect of the present invention is a method for producing a covered mold for shearing, wherein a hard film containing a nitride of AlCrSi is coated on the surface of a mold base material, and in the method for producing a covered mold for shearing , the hard film is coated on the mold substrate with a film thickness of 0.3 μm to 2.0 μm using high-output pulse sputtering, and a mixed gas of N 2 and Ar is used during the high-output pulse sputtering, and the flow rate of N 2 gas is The ratio to the Ar gas flow rate is 0.65 to 1.60. Preferably, the maximum power of the high-output pulse sputtering is 50 kW to 130 kW. [Effect of invention]

根據本發明,可獲得能夠在高硬度且板厚薄的材料的剪切加工中高精度地進行加工,且亦具有高耐久性的剪切加工用包覆模具。ADVANTAGE OF THE INVENTION According to this invention, in the shearing process of the material with high hardness and thin plate thickness, it can process with high precision, and can obtain the covering die for shearing which also has high durability.

以下詳細說明本發明的實施方式。其中,本發明並不限定於此處列舉的實施方式,在不脫離所述發明的技術思想的範圍內能夠進行適當組合或改良。本發明的包覆模具適用於剪切加工用模具用途,作為具體的例子,可適用於使用上模(衝頭)及下模(衝模)的毛坯加工(切斷加工、衝裁加工、切口加工等)、衝孔加工。較佳為用於精密衝裁(fine blanking)或精衝加工等使上模與下模的間隙變小的加工(精密剪切加工)。本發明藉由特別適用於小型的模具,發揮優異的效果。例如,較佳為適用於衝頭面的面積為2000 mm 2以下(較佳為1000 mm 2以下,更佳為500 mm 2以下,進而佳為100 mm 2以下)的衝裁加工用模具。另外,有效的是用於被加工材料為高硬度且厚度為500 μm以下的薄板、薄帶形狀的材料(例如HV180以上的電磁鋼板、非晶材、卡遜合金等)的加工。更佳為用於厚度為150 μm以下的薄板、薄帶狀材料。 Embodiments of the present invention will be described in detail below. However, the present invention is not limited to the embodiments listed here, and can be appropriately combined or improved without departing from the technical idea of the invention. The covering die of the present invention is suitable for use as a die for shearing, and as a specific example, it can be applied to blank processing (cutting, punching, notch processing) using an upper die (punch) and a lower die (die). etc.), punching. Preferably, it is used for the process (fine cutting process) which narrows the clearance gap between an upper die and a lower die, such as fine blanking and fine blanking. The present invention exhibits excellent effects by being particularly suitable for small molds. For example, it is preferable to apply to a die for punching processing having an area of a punch face of 2000 mm 2 or less (preferably 1000 mm 2 or less, more preferably 500 mm 2 or less, and still more preferably 100 mm 2 or less). In addition, it is effective for processing thin plates and strip-shaped materials with high hardness and a thickness of 500 μm or less (for example, electrical steel sheets of HV180 or more, amorphous materials, Casson alloys, etc.). More preferably, it is used for a thin plate and a thin strip-shaped material with a thickness of 150 μm or less.

首先,對本發明的實施方式的剪切加工用包覆模具(以下亦僅記載為包覆模具)進行說明。首先,本實施方式的包覆模具在模具基材的表面具有包含AlCrSi的氮化物(AlCrSiN)的硬質皮膜。剪切加工用包覆模具的損傷形態是由於其硬質皮膜的粒子脫落而造成的損耗。AlCrSiN膜與先前使用的AlCrN膜相比,皮膜中的結晶粒徑被微細化,具有粒狀斷裂面組織。其結果,AlCrSiN抑制了所述硬質皮膜的粒子脫落,具有耐磨耗性較AlCrN膜優異的傾向。再者,本實施方式的硬質皮膜至少在模具的作業面(加工時與被加工材接觸的面)成膜。較佳使用AlxCrySiz的氮化物膜(其中,x、y、z表示原子比,x+y+z=100,50<x<75,20≦y<50,0<z≦10)。 此處,本發明的包覆模具在不損及本發明的效果的範圍內,可更具有與所述硬質皮膜不同組成的膜。例如,為了提高密接力,可在基材與硬質皮膜之間形成具有0.01 μm~0.1 μm以下的厚度的基底膜。該基底膜較佳為選自週期表的4族、5族、6族金屬、Al、Si、B中的一種或兩種以上元素的氮化物膜。 First, the covering die for shearing processing according to the embodiment of the present invention (hereinafter also referred to only as a covering die) will be described. First, the cover mold of the present embodiment has a hard coating including a nitride of AlCrSi (AlCrSiN) on the surface of the mold base material. The damage form of the covering die for shearing is loss due to the detachment of particles of the hard coating. The AlCrSiN film has a finer grain size than the AlCrN film used in the past, and has a granular fracture surface structure. As a result, AlCrSiN suppresses the drop-off of particles of the hard coating, and tends to be superior in wear resistance to that of the AlCrN film. In addition, the hard film of this embodiment is formed into a film at least on the working surface of the mold (the surface that is in contact with the workpiece during machining). A nitride film of AlxCrySiz is preferably used (wherein x, y, and z represent atomic ratios, x+y+z=100, 50<x<75, 20≦y<50, 0<z≦10). Here, the covering mold of the present invention may further have a film having a composition different from that of the above-mentioned hard coating, within the range that does not impair the effect of the present invention. For example, in order to improve the adhesion force, a base film having a thickness of 0.01 μm to 0.1 μm or less may be formed between the base material and the hard film. The base film is preferably a nitride film of one or two or more elements selected from the group 4, 5, and 6 metals of the periodic table, Al, Si, and B.

在本實施方式的模具基材上成膜的硬質皮膜的厚度為2.0 μm以下。例如在對板厚50 μm的薄板狀材料進行衝裁加工時,一般而言,衝模-衝頭間的間隙的上限為板厚的10%即5 μm。在此種間隙非常小的加工中,若包覆於模具的硬質皮膜過厚,則有可能導致加工精度的降低、或材料的異常斷裂、模具彼此的干涉,因此在本實施方式中將硬質皮膜的膜厚的上限設為2.0 μm。另一方面,即使硬質皮膜過薄,亦不易獲得模具的耐久性提高效果,因此將膜厚的下限設為0.3 μm。較佳的膜厚的上限為1.0 μm,更佳的膜厚的上限為0.6 μm。另外,較佳的膜厚的下限為0.5 μm。The thickness of the hard film formed on the mold base material of the present embodiment is 2.0 μm or less. For example, when punching a thin plate-like material with a plate thickness of 50 μm, in general, the upper limit of the gap between the die and the punch is 5 μm, which is 10% of the plate thickness. In such machining with a very small gap, if the hard film covering the mold is too thick, there is a possibility that the machining accuracy will decrease, the material may be abnormally fractured, or the molds will interfere with each other. Therefore, in this embodiment, the hard film is The upper limit of the film thickness was set to 2.0 μm. On the other hand, even if the hard film is too thin, the effect of improving the durability of the mold is not easily obtained, so the lower limit of the film thickness is made 0.3 μm. A preferable upper limit of the film thickness is 1.0 μm, and a more preferable upper limit of the film thickness is 0.6 μm. In addition, the preferable lower limit of the film thickness is 0.5 μm.

本實施方式的包覆模具的特徵在於,包覆模具的邊緣部的硬質皮膜的膜厚相對於包覆模具的平面部的硬質皮膜的膜厚的比率(以下亦僅記載為膜厚比率)為0.60~1.40。藉由具有所述的膜厚比率,本實施方式的包覆模具可在高硬度且薄板材料的剪切加工中抑制模具的損傷,而進行高精度的加工。在所述膜厚比率超過1.40的情況下,由於模具的邊緣部的膜厚過厚,有可能因剪切應力的集中而產生皮膜的剝離或基材的缺口。另一方面,在膜厚比率小於0.60的情況下,相對於模具中央部的膜厚,邊緣部的膜厚形成得非常薄,或者在邊緣部不形成膜,有時無法獲得本發明的效果。較佳的膜厚比率的下限為0.65,更佳的膜厚比率的下限為0.70,進而佳的膜厚比率的下限為0.75。另外,較佳的膜厚比率的上限為1.35,更佳的膜厚比率的上限為1.30。再者,本實施方式中的「邊緣部的膜厚」表示距離邊緣(刀尖)5 μm以內測定的膜厚,「平面部的膜厚」表示距離所述邊緣至少0.5 mm的作業面上的任意部位的膜厚。The covering mold according to the present embodiment is characterized in that the ratio of the film thickness of the hard film covering the edge portion of the mold to the film thickness of the hard film covering the flat surface portion of the mold (hereinafter also simply referred to as film thickness ratio) is 0.60. ~1.40. By having the above-described film thickness ratio, the covering die of the present embodiment can suppress damage to the die during shearing of a high-hardness and thin-plate material, and can perform high-precision machining. When the said film thickness ratio exceeds 1.40, since the film thickness of the edge part of a metal mold|die is too thick, there exists a possibility that a peeling of a film or a chip|tip of a base material may generate|occur|produce by the concentration of shear stress. On the other hand, when the film thickness ratio is less than 0.60, the film thickness of the edge part is very thin with respect to the film thickness of the mold center part, or the film is not formed in the edge part, and the effect of the present invention may not be obtained. The lower limit of the preferable film thickness ratio is 0.65, the lower limit of the preferable film thickness ratio is 0.70, and the lower limit of the preferable film thickness ratio is 0.75. In addition, the upper limit of the preferable film thickness ratio is 1.35, and the upper limit of the preferable film thickness ratio is 1.30. In addition, the "film thickness of the edge part" in this embodiment means the film thickness measured within 5 μm from the edge (blade), and the "film thickness of the flat part" means the thickness of the work surface at least 0.5 mm away from the edge. Film thickness at any location.

本實施方式的包覆模具為了進一步提高基材與硬質皮膜的密接性,較佳為基材表面的按照JIS-B-0601(2001)而規定的算術平均粗糙度Ra為0.05 μm以下。更佳的Ra為0.02 μm以下,進而佳的Ra為0.01 μm以下。In order to further improve the adhesiveness between the substrate and the hard film, the cover mold of the present embodiment preferably has an arithmetic mean roughness Ra of 0.05 μm or less defined in accordance with JIS-B-0601 (2001) on the surface of the substrate. More preferable Ra is 0.02 μm or less, and still more preferable Ra is 0.01 μm or less.

繼而,對本發明的剪切加工用包覆模具的製造方法進行說明。實施本發明的製造方法,獲得膜厚為0.3 μm~2.0 μm的硬質皮膜。而且,亦能夠有效果地獲得被覆模具的邊緣部的硬質皮膜的膜厚相對於被覆模具的平面部的硬質皮膜的膜厚的比率為0.60~1.40的剪切加工用被覆模具。 (第一包覆步驟) 本實施方式的製造方法中,使用高輸出脈衝濺鍍在模具基材上包覆包含AlCrSi的氮化物的硬質皮膜。高輸出脈衝濺鍍例如是被稱為HiPIMS(High Power Impulse Magnetron Sputtering(高功率脈衝磁控濺鍍))或HPPMS(High Power Pulse Magnetron Sputtering)等的物理蒸鍍法的一種,由於靶材料的離子化率高,故可將緻密且與基材的密接性高、微滴(皮膜表面的附著粒子)亦少的硬質皮膜成膜。圖1表示使用高輸出脈衝濺鍍成膜的本實施方式的硬質皮膜的例子。根據圖1,可確認藉由高輸出脈衝濺鍍在基材2上成膜的硬質皮膜1在表面沒有微滴,可形成具有平滑的表面的膜。 Next, the manufacturing method of the covering die for shearing processing of this invention is demonstrated. The production method of the present invention was carried out to obtain a hard coating having a film thickness of 0.3 μm to 2.0 μm. Furthermore, a coating die for shearing can be effectively obtained in which the ratio of the film thickness of the hard coating on the edge portion of the coating die to the film thickness of the hard coating on the flat surface portion of the coating die is 0.60 to 1.40. (first coating step) In the manufacturing method of this embodiment, the hard film|membrane containing the nitride of AlCrSi is coat|covered on the mold base material by high output pulse sputtering. High output pulse sputtering is, for example, one of physical vapor deposition methods called HiPIMS (High Power Impulse Magnetron Sputtering) or HPPMS (High Power Pulse Magnetron Sputtering). Since the conversion rate is high, it is possible to form a hard film that is dense, has high adhesion to the substrate, and has few droplets (particles attached to the surface of the film). FIG. 1 shows an example of the hard coating of the present embodiment formed by high-output pulse sputtering. 1 , it was confirmed that the hard film 1 formed on the substrate 2 by the high-output pulse sputtering had no droplets on the surface, and a film having a smooth surface could be formed.

在本實施方式的製造方法中,硬質皮膜成膜時的反應氣體使用N 2與Ar的混合氣體。本實施方式的AlCrSi的氮化物膜的成膜方法是使用AlCrSi靶,一邊導入含N 2氣體一邊藉由高輸出脈衝濺鍍法實施成膜。此處,在AlCrSi靶與N 2反應,在靶表面形成氮化物的化合物模式的情況下,產生成膜速率的急劇降低,因此,在本實施方式中,將N 2氣體流量相對於Ar氣體流量的比調整為1.60以下而形成硬質皮膜。藉由以該氣體流量比進行成膜,可抑制成膜時完全切換為化合物模式。N 2氣體流量相對於Ar氣體流量之比的較佳的上限為1.50,更佳為1.40。另一方面,在N 2氣體流量相對於Ar氣體流量之比過小的情況下,有可能在模具的邊緣部硬質皮膜的形成不充分。另外,在硬質皮膜中大量析出作為脆弱相的hcp-AlN,有可能導致硬質皮膜的硬度降低。為了抑制該hcp-AlN的析出,且在模具的邊緣部亦形成充分膜厚的硬質皮膜,本發明的N 2氣體流量相對於Ar氣體流量之比為0.65以上。N 2氣體流量相對於Ar氣體流量之比的較佳的下限為0.70,更佳為0.80。此處,為了進行穩定的包覆,Ar氣體流量可設定為150 ml/min以上。較佳的Ar氣體流量為170 ml/min以上,更佳的Ar氣體流量為190 ml/min以上。另外,除了N 2氣體及Ar氣體以外,在不妨礙所述本發明的效果的範圍內,亦可導入Kr氣體等。 In the production method of the present embodiment, a mixed gas of N 2 and Ar is used as the reaction gas at the time of hard film formation. The film formation method of the AlCrSi nitride film of the present embodiment is performed by the high-output pulse sputtering method using an AlCrSi target and introducing a gas containing N 2 . Here, in the case of a compound mode in which the AlCrSi target reacts with N 2 to form nitrides on the target surface, the film formation rate rapidly decreases. Therefore, in this embodiment, the N 2 gas flow rate is set to the Ar gas flow rate. The ratio was adjusted to 1.60 or less to form a hard coating. By performing film formation at this gas flow rate ratio, it is possible to suppress complete switching to the compound mode during film formation. A preferable upper limit of the ratio of the N 2 gas flow rate to the Ar gas flow rate is 1.50, more preferably 1.40. On the other hand, when the ratio of the N 2 gas flow rate to the Ar gas flow rate is too small, there is a possibility that the formation of the hard film on the edge portion of the mold is insufficient. In addition, a large amount of hcp-AlN, which is a fragile phase, is precipitated in the hard coating, and the hardness of the hard coating may decrease. In order to suppress the precipitation of this hcp-AlN and to form a hard coating with a sufficient thickness on the edge of the mold, the ratio of the N 2 gas flow rate to the Ar gas flow rate in the present invention is 0.65 or more. A preferable lower limit of the ratio of the N 2 gas flow rate to the Ar gas flow rate is 0.70, more preferably 0.80. Here, in order to perform stable coating, the Ar gas flow rate can be set to 150 ml/min or more. The preferable Ar gas flow rate is 170 ml/min or more, and the more preferable Ar gas flow rate is 190 ml/min or more. In addition to N 2 gas and Ar gas, Kr gas or the like may be introduced within a range that does not inhibit the effects of the present invention.

本實施方式中的硬質皮膜包覆時的偏置電壓較佳為將下限設定為-140 V。在低於-140 V的情況下,有可能發生電弧而在皮膜中產生缺陷。另一方面,當偏置電壓超過-60 V時,硬度有降低的傾向,因此較佳為將上限設定為-60 V。更佳的偏置電壓的下限為-110 V,更佳的偏置電壓的上限為-90 V。The bias voltage at the time of hard coating in the present embodiment is preferably set to -140 V as the lower limit. In the case of less than -140 V, arcing may occur and defects may be generated in the film. On the other hand, when the bias voltage exceeds -60 V, the hardness tends to decrease, so the upper limit is preferably set to -60 V. The lower limit of the better bias voltage is -110 V, and the upper limit of the better bias voltage is -90 V.

在本實施方式的製造方法中,較佳為使投入靶的最大功率為50 kW~130 kW。藉由如此般將向靶投入的最大功率設定得高,容易獲得緻密的皮膜組織,提高與基材的密接性,亦能夠獲得保持皮膜表面更平滑的效果。再者,此處所示的最大功率是根據投入靶的平均功率使用以下的計算式而算出。 最大功率(kW)=平均功率(kW)×週期(μs)/脈衝寬度(μs) 週期(μs)=1000×1000/頻率(Hz) In the production method of the present embodiment, it is preferable that the maximum power input into the target be 50 kW to 130 kW. By setting the maximum power input to the target high in this way, a dense film structure can be easily obtained, the adhesion to the substrate can be improved, and the effect of keeping the film surface smoother can also be obtained. In addition, the maximum power shown here is calculated using the following calculation formula from the average power thrown into a target. Maximum power (kW) = average power (kW) × period (μs) / pulse width (μs) Period (μs)=1000×1000/Frequency (Hz)

本實施方式的製造方法中,為了進一步提高硬質皮膜與基材的密接性,可在包覆硬質皮膜之前在基材上形成基底膜。作為基底膜,可使用選自週期表的4族、5族、6族金屬、Al、Si、B中的一種或兩種以上元素的氮化物膜,膜厚可設定在0.01 μm~0.1 μm的範圍內。 [實施例] In the manufacturing method of this embodiment, in order to further improve the adhesiveness of a hard coating film and a base material, a base film may be formed on a base material before covering a hard coating film. As the base film, a nitride film of one or two or more elements selected from metals of Group 4, Group 5, and Group 6 of the periodic table, Al, Si, and B can be used, and the film thickness can be set to a thickness of 0.01 μm to 0.1 μm. within the range. [Example]

(實施例1) 作為基材,分別準備3根衝頭面的尺寸為1 mm×1 mm(超硬合金製造)、2 mm×2 mm(超硬合金製造)、4 mm×4 mm(高速鋼製造)的小型衝頭。作為本發明例的試樣No.1~No.6使用高輸出脈衝濺鍍(HiPIMS)裝置作為包覆裝置,作為比較例的試樣No.7~No.9使用直流磁控濺鍍(direct current magnetron sputtering,DCMS)作為包覆裝置。在本發明例及比較例中使用的包覆裝置具有所設置的衝頭一邊自轉一邊公轉的旋轉機構,靶固定在衝頭的側面側。試樣No.1~No.9均使用Ti作為基底膜成膜用靶,使用AlCrSi作為硬質皮膜成膜用靶。在基材上包覆基底膜之前,將基材的表面研磨成平均粗糙度Ra為0.05 μm,Rz為0.1 μm,脫脂清洗,固定在基材支架上。然後,藉由設置在腔室中的加熱用加熱器,將基材加熱至500℃附近,保持120分鐘。接下來,導入Ar氣體,對基材施加-200 V的偏置電壓,進行15分鐘的電漿清潔處理(Ar離子蝕刻)。然後,對結束了清潔處理的基材包覆TiN的基底膜後,在表1所示的條件下進行成膜,製作作為本發明例的試樣No.1~No.6、及作為比較例的試樣No.7~9。 (Example 1) As the base material, three small punch faces with dimensions of 1 mm × 1 mm (made of cemented carbide), 2 mm × 2 mm (made of cemented carbide), and 4 mm × 4 mm (made of high-speed steel) were prepared. shower. Samples No. 1 to No. 6, which are examples of the present invention, used a high-output pulse sputtering (HiPIMS) apparatus as a coating apparatus, and No. 7 to No. 9, which were comparative examples, used a direct-current magnetron sputtering (direct-current magnetron sputtering). current magnetron sputtering, DCMS) as the cladding device. The coating apparatuses used in the examples of the present invention and the comparative examples have a rotating mechanism that revolves while the provided punch is rotating, and the target is fixed to the side surface side of the punch. All of the samples No. 1 to No. 9 used Ti as a target for forming a base film, and used AlCrSi as a target for forming a hard film. Before coating the base film on the substrate, the surface of the substrate was ground to an average roughness Ra of 0.05 μm and Rz of 0.1 μm, degreased and cleaned, and fixed on the substrate holder. Then, the substrate was heated to around 500° C. by a heater for heating provided in the chamber, and held for 120 minutes. Next, Ar gas was introduced, a bias voltage of -200 V was applied to the substrate, and plasma cleaning treatment (Ar ion etching) was performed for 15 minutes. Then, the base material after the cleaning treatment was covered with a base film of TiN, and then the film was formed under the conditions shown in Table 1 to prepare samples No. 1 to No. 6 as examples of the present invention and comparative examples. of sample Nos. 7 to 9.

[表1] 試樣No. 成膜方法 Ar流量 (ml/min) N 2流量 (ml/min) N 2/Ar 膜厚 (μm) 偏置電壓 (V) 脈衝寬度 (μs) 頻率 (Hz) 平均功率 (kW) 最大功率 (kW) 備註 1,2,3 HiPIMS 200 160 0.80 1.0 -100 50 1000 1→3 1 60 本發明例 4,5,6 HiPIMS 200 264 1.32 1→6 2 120 本發明例 7,8,9 DCMS 300 170 0.57 - - 4 4 比較例 ※1:以0.5 kW/10 s使輸出自1 kW上升至3 kW,自3 kW起保持固定 ※2:以0.5 kW/10 s使輸出自1 kW上升至6 kW,自6 kW起保持固定 [Table 1] Sample No. Film formation method Ar flow (ml/min) N 2 flow (ml/min) N 2 /Ar Film thickness (μm) Bias Voltage (V) Pulse width (μs) Frequency (Hz) Average power (kW) Maximum power (kW) Remark 1,2,3 HiPIMS 200 160 0.80 1.0 -100 50 1000 1→3 1 60 Example of the present invention 4,5,6 HiPIMS 200 264 1.32 1→6 2 120 Example of the present invention 7,8,9 DCMS 300 170 0.57 - - 4 4 Comparative example *1: Increase the output from 1 kW to 3 kW at 0.5 kW/10 s, and keep it fixed from 3 kW *2: Increase the output from 1 kW to 6 kW at 0.5 kW/10 s, and keep it constant from 6 kW

繼而,對製作的試樣No.1~3、No.7~9進行利用EPMA的面分析,對試樣No.1~9進行膜厚比率的測定。圖2的(a)是表示利用EPMA的膜厚的觀察部位的示意圖。如圖2的(a)所示,對試樣的前端側面部實施面分析,自Cr成分的分佈觀察膜厚分佈。在試樣尺寸小的試樣No.1、No.2、No.7、No.8中,為了確認有無作為基材的超硬合金的露出,亦對W成分進行了測定。另外,對於膜厚測定,如圖2的(b)所示,切斷試樣的中心,由利用掃描線電子顯微鏡(scanning electronic microscope,SEM)得到的倍率1萬倍的照片測定試樣前端部的上表面部與兩個部位的邊緣部及側面部的膜厚(圖2的(c)的(1)~(7)的部位)。再者,各邊緣部測定試樣上表面側及試樣側面側的距邊緣約5 μm的位置。測定後,將上表面部(4)的膜厚作為平面部的膜厚,算出各測定部位的膜厚相對於平面部的膜厚的比率。EPMA分析結果示於圖3,膜厚比率示於表2。Next, the surface analysis by EPMA was performed about the produced sample Nos. 1 to 3 and No. 7 to 9, and the measurement of the film thickness ratio was performed for the sample Nos. 1 to 9. FIG. 2( a ) is a schematic diagram showing the observed portion of the film thickness by EPMA. As shown in FIG. 2( a ), surface analysis was performed on the front end side surface portion of the sample, and the film thickness distribution was observed from the distribution of the Cr component. In samples No. 1, No. 2, No. 7, and No. 8 with small sample sizes, the W component was also measured in order to confirm the presence or absence of exposure of the cemented carbide as the base material. In addition, for the film thickness measurement, as shown in FIG. 2( b ), the center of the sample was cut, and the tip portion of the sample was measured from a photograph obtained by a scanning electron microscope (SEM) at a magnification of 10,000 times. The film thickness of the upper surface part and the edge part and the side surface part of two parts (parts (1)-(7) of FIG.2(c)). In addition, the position of each edge part about 5 micrometers from an edge was measured on the sample upper surface side and the sample side surface side. After the measurement, the film thickness of the upper surface portion (4) was used as the film thickness of the flat portion, and the ratio of the film thickness of each measurement site to the film thickness of the flat portion was calculated. The EPMA analysis results are shown in FIG. 3 , and the film thickness ratios are shown in Table 2.

[表2] 試樣No. 試樣尺寸 基材 測定部位(4) 的膜厚 (μm) 各測定部位的膜厚相對於膜厚(4)的比率 備註 (1) (2) (3)側面 (3)上表面 (4) (5)上表面 (5)側面 (6) (7) 1 1mm×1mm 超硬合金 0.8 0.89 0.93 0.96 1.15 1.00 1.02 0.98 0.95 0.89 本發明例 2 2mm×2mm 超硬合金 0.8 0.92 0.90 1.29 1.27 1.00 1.19 1.23 0.92 0.91 3 4mm×4mm 高速鋼 0.8 0.90 1.04 1.24 1.08 1.00 1.10 1.03 0.85 0.85 4 1mm×1mm 超硬合金 1.1 0.94 0.98 0.92 1.12 1.00 1.15 1.05 1.00 0.97 5 2mm×2mm 超硬合金 0.9 1.02 1.03 1.12 1.10 1.00 1.18 1.10 1.05 1.01 6 4mm×4mm 高速鋼 1.0 1.02 1.00 1.16 1.16 1.00 1.18 1.16 0.96 0.98 7 1mm×1mm 超硬合金 0.9 0.67 0.31 0.20 0.42 1.00 0.55 0.00 0.00 0.72 比較例 8 2mm×2mm 超硬合金 0.9 0.71 0.40 0.39 0.55 1.00 0.45 0.34 0.30 0.71 9 4mm×4mm 高速鋼 0.9 0.77 0.40 0.48 0.63 1.00 0.67 0.40 0.58 0.62 [Table 2] Sample No. Sample size substrate Film thickness (μm) at measurement site (4) Ratio of film thickness at each measurement site to film thickness (4) Remark (1) (2) (3) Side (3) Upper surface (4) (5) Upper surface (5) Side (6) (7) 1 1mm×1mm Cemented carbide 0.8 0.89 0.93 0.96 1.15 1.00 1.02 0.98 0.95 0.89 Example of the present invention 2 2mm×2mm Cemented carbide 0.8 0.92 0.90 1.29 1.27 1.00 1.19 1.23 0.92 0.91 3 4mm×4mm high speed steel 0.8 0.90 1.04 1.24 1.08 1.00 1.10 1.03 0.85 0.85 4 1mm×1mm Cemented carbide 1.1 0.94 0.98 0.92 1.12 1.00 1.15 1.05 1.00 0.97 5 2mm×2mm Cemented carbide 0.9 1.02 1.03 1.12 1.10 1.00 1.18 1.10 1.05 1.01 6 4mm×4mm high speed steel 1.0 1.02 1.00 1.16 1.16 1.00 1.18 1.16 0.96 0.98 7 1mm×1mm Cemented carbide 0.9 0.67 0.31 0.20 0.42 1.00 0.55 0.00 0.00 0.72 Comparative example 8 2mm×2mm Cemented carbide 0.9 0.71 0.40 0.39 0.55 1.00 0.45 0.34 0.30 0.71 9 4mm×4mm high speed steel 0.9 0.77 0.40 0.48 0.63 1.00 0.67 0.40 0.58 0.62

根據圖3的EPMA面分析結果,作為本發明例的試樣No.1~No.3的Cr成分均勻地分佈於基材,在試樣No.1及試樣No.2中作為基材成分的W亦未被確認,因此確認了無基材的露出,可實現均勻的成膜。另一方面,作為比較例的試樣No.7~No.9在基材前端部存在皮膜非常薄、或者未形成皮膜而基材幾乎露出的部位。而且,在膜厚比率的值中,本發明例的邊緣部、側面部、上表面部的膜厚差小,顯示出非常良好的值。另一方面,確認了比較例的邊緣部、側面部的膜厚較上表面部的膜厚薄,試樣No.7的邊緣部未形成皮膜,實際加工時容易發生不良的狀態。According to the EPMA surface analysis results of FIG. 3 , the Cr components of the samples No. 1 to No. 3, which are examples of the present invention, are uniformly distributed in the base material, and the Cr component is the base material component in the sample No. 1 and the sample No. 2. W was also not confirmed, so it was confirmed that there was no exposure of the substrate, and uniform film formation was possible. On the other hand, in the samples No. 7 to No. 9, which are comparative examples, there are portions where the film is very thin at the front end portion of the base material, or where the film is not formed and the base material is almost exposed. Furthermore, in the value of the film thickness ratio, the film thickness difference of the edge part, the side surface part, and the upper surface part of the example of this invention was small, and showed a very favorable value. On the other hand, it was confirmed that the film thickness of the edge part and the side part of the comparative example was thinner than the film thickness of the upper surface part, and the edge part of the sample No. 7 did not form a film, and it was confirmed that a defect was likely to occur during actual processing.

(實施例2) 繼而,改變實施例1與模具的形狀,調查膜厚分佈。準備模擬了具有圖4所示的複雜形狀的上表面的精密加工用模具(衝模)的試驗片,靶設置在模具上表面側。在與實施例1的試樣No.4~6相同的條件下製作作為本發明例的試樣No.10,在與實施例1的試樣No.7~9相同的條件下製作作為比較例的試樣No.11。將製作的試樣沿圖4所示的A-A'及B-B'切斷,對於A-A'切斷面(圖5)及B-B'切斷面(圖6),分別由利用掃描型電子顯微鏡(SEM)獲得的倍率1萬倍的照片測定試樣上表面部及2處邊緣部的膜厚。再者,各邊緣部與實施例1同樣地測定試樣上表面側及試樣側面側的距邊緣約5 μm的位置。測定後,在A-A'切斷面上以上表面部(12)為平面部,在B-B'切斷面上以上表面部(15)為平面部,算出各測定部位的膜厚相對於平面部的膜厚的比率。結果如表3、表4所示。 (Example 2) Next, the shapes of Example 1 and the mold were changed, and the film thickness distribution was investigated. A test piece simulating a precision machining die (die) having an upper surface of a complicated shape shown in FIG. 4 was prepared, and the target was set on the upper surface side of the die. Sample No. 10, which is an example of the present invention, was produced under the same conditions as Sample Nos. 4 to 6 in Example 1, and Comparative Examples were produced under the same conditions as Sample Nos. 7 to 9 in Example 1. The sample No.11. The prepared samples were cut along AA' and BB' shown in Fig. 4. For the AA' cut surface (Fig. 5) and the BB' cut surface (Fig. 6), respectively The film thicknesses of the upper surface portion and the two edge portions of the sample were measured using a photograph at a magnification of 10,000 times obtained by a scanning electron microscope (SEM). In addition, similarly to Example 1, the position of each edge part about 5 micrometers from an edge was measured on the sample upper surface side and the sample side surface side. After the measurement, the upper surface portion ( 12 ) on the AA' cut surface is a flat portion, and the upper surface portion ( 15 ) on the BB' cut surface is a flat portion, and the film thickness of each measurement site is calculated relative to the flat surface. The ratio of the film thickness of the part. The results are shown in Table 3 and Table 4.

[表3] 試樣No. 測定部位(12) 的膜厚 (μm) 各測定部位的膜厚相對於膜厚(12)的比率 備註 (11)側面 (11)上表面 (12) (13)上表面 (13)側面 10 0.8 0.87 1.15 1.00 1.06 0.86 本發明例 11 0.9 0.64 0.91 1.00 0.78 0.00 比較例 [table 3] Sample No. Film thickness (μm) at measurement site (12) Ratio of film thickness at each measurement site to film thickness (12) Remark (11)Side (11) Upper surface (12) (13) Upper surface (13)Side 10 0.8 0.87 1.15 1.00 1.06 0.86 Example of the present invention 11 0.9 0.64 0.91 1.00 0.78 0.00 Comparative example

[表4] 試樣No. 測定部位(15) 的膜厚 (μm) 各測定部位的膜厚相對於膜厚(15)的比率 備註 (14)側面 (14)上表面 (15) (16)上表面 (16)側面 10 0.9 0.95 1.14 1.00 1.01 0.66 本發明例 11 1.0 0.89 0.88 1.00 0.96 0.00 比較例 [Table 4] Sample No. Film thickness (μm) at measurement site (15) Ratio of film thickness at each measurement site to film thickness (15) Remark (14)Side (14) Upper surface (15) (16) Upper surface (16)Side 10 0.9 0.95 1.14 1.00 1.01 0.66 Example of the present invention 11 1.0 0.89 0.88 1.00 0.96 0.00 Comparative example

如表3及表4的結果所示,確認了作為本發明例的試樣No.10即使是較實施例1複雜的形狀,膜厚比率亦不會成為過小或過大的值,即使在邊緣部亦能夠以與平面部同等水準的膜厚形成硬質皮膜。與此相對,作為比較例的試樣No.11在邊緣部存在無法形成硬質皮膜的部位(測定部位(13)側面及測定部位(16)側面),在用於加工時,有可能自無法成膜的部位產生基材缺口或硬質皮膜剝離。As shown in the results in Tables 3 and 4, it was confirmed that even if the sample No. 10, which is an example of the present invention, has a more complicated shape than that of Example 1, the film thickness ratio does not become too small or too large, and even at the edge portion A hard coating can also be formed with a film thickness equivalent to that of the flat portion. On the other hand, in the sample No. 11 as a comparative example, there are parts (the side of the measurement part (13) and the side of the measurement part (16)) where the hard coating cannot be formed in the edge part, and there is a possibility that the part cannot be formed when it is used for processing. A substrate chipping or hard film peeling occurs in the film portion.

(實施例3) 接下來,確認氣體流量對硬質皮膜的影響。準備超硬合金製造的試驗片,對基材表面進行鏡面加工。使用高輸出脈衝濺鍍裝置作為包覆裝置,準備Ti作為基底膜成膜用靶,準備AlCrSi作為硬質皮膜成膜用靶。在與實施例1的本發明例同樣的條件下實施直至電漿清潔,在電漿清潔處理後的基材上包覆TiN的基底膜後,在表5的條件下包覆硬質皮膜,製作本發明例及比較例的試樣。 (Example 3) Next, the influence of the gas flow rate on the hard coating was confirmed. A test piece made of cemented carbide was prepared, and the surface of the base material was mirror-finished. A high-power pulse sputtering apparatus was used as a coating apparatus, Ti was prepared as a target for base film formation, and AlCrSi was prepared as a target for hard film formation. Plasma cleaning was carried out under the same conditions as in the example of the present invention in Example 1. After the substrate after the plasma cleaning treatment was coated with a TiN base film, a hard film was coated under the conditions shown in Table 5 to prepare the present invention. Samples of Inventive Examples and Comparative Examples.

[表5] 試樣No. Ar流量 (ml/min) N 2流量 (ml/min) N 2/Ar 膜厚 (μm) 偏置電壓 (V) 平均功率 (kW) 最大功率 (kW) 備註 12 200 264 1.32 1.9 -100 1→6 120 本發明例 13 200 160 0.80 1.9 14 250 160 0.64 2.0 比較例 15 300 160 0.53 1.9 16 300 140 0.47 1.3 ※:以0.5 kW/10 s使輸出自1 kW上升至6 kW,自6 kW起保持固定 [table 5] Sample No. Ar flow (ml/min) N 2 flow (ml/min) N 2 /Ar Film thickness (μm) Bias Voltage (V) Average power (kW) Maximum power (kW) Remark 12 200 264 1.32 1.9 -100 1→6 120 Example of the present invention 13 200 160 0.80 1.9 14 250 160 0.64 2.0 Comparative example 15 300 160 0.53 1.9 16 300 140 0.47 1.3 ※: The output is increased from 1 kW to 6 kW at 0.5 kW/10 s, and the output is kept constant from 6 kW

對獲得的試樣No.12~No.16進行硬度及結晶結構的測定。硬度是使用埃林克斯(Elionix)股份有限公司製的納米壓痕裝置,在皮膜的研磨面內選定最大壓入深度小於層厚的大致1/10的區域,測定10點後,求出測定值的平均值作為硬度。測定條件為壓入荷重:9.8 mN,最大荷重保持時間:1秒,荷重負荷後的除去速度:0.49 mN/秒。另外,晶體結構的測定使用X射線繞射。具體而言,使用理學股份有限公司製造的X射線繞射裝置(型號:RINT2500PC),在管電壓:40 kV,管電流:200 mA,X射線源:Cokα(λ=0.17902 nm)、2θ:30°~70°的測定條件下實施。測定結果如圖7、圖8所示。可確認作為本發明例的試樣No.12、No.13具有較其他比較例優異的硬度。另外,根據XRD測定結果,作為本發明例的試樣No.12、No.13在作為脆弱相的hcp-AlN(100)附近沒有峰,作為比較例的試樣No.14~16在hcp-AlN(100)附近確認到峰。The hardness and crystal structure of the obtained samples No. 12 to No. 16 were measured. The hardness is determined by selecting a region where the maximum indentation depth is less than about 1/10 of the layer thickness in the polished surface of the film using a nanoindentation device manufactured by Elionix Co., Ltd., and measuring 10 points. The average of the values was taken as the hardness. The measurement conditions were an indentation load: 9.8 mN, a maximum load holding time: 1 second, and a removal rate after a heavy load: 0.49 mN/sec. In addition, X-ray diffraction was used for the measurement of the crystal structure. Specifically, an X-ray diffraction apparatus (model: RINT2500PC) manufactured by Rigaku Co., Ltd. was used, at tube voltage: 40 kV, tube current: 200 mA, X-ray source: Cokα (λ=0.17902 nm), 2θ: 30 It implements under the measurement conditions of ° to 70°. The measurement results are shown in FIGS. 7 and 8 . It was confirmed that the samples No. 12 and No. 13, which are examples of the present invention, have hardness superior to other comparative examples. In addition, according to the XRD measurement results, the samples No. 12 and No. 13, which are examples of the present invention, have no peaks in the vicinity of hcp-AlN (100), which is a fragile phase. A peak was confirmed near AlN (100).

接下來,為了評價硬質皮膜的耐久性,實施劃痕試驗。在比較例中,使用先前用於剪切加工用途的無氫的類金剛石碳膜。試驗機使用CSM公司製劃痕試驗機(REVETEST),測定條件設為測定荷重:0 N~120 N,劃痕速度:10 mm/min,劃痕距離:10 mm,AE感度:5,壓頭:洛氏、金剛石,前端半徑:200 μm,硬體設定:Fn觸點0.9 N、Fn速度:5 N/s,Fn去除速度:10 N/s,接近速度:2%/s。結果如圖9所示。比較例的試樣在劃痕距離約5 mm處發生了皮膜的剝離,但本發明例在試驗中未確認到皮膜的破壞。由以上可確認,即使將本發明的包覆模具應用於剪切加工用途,亦具有良好的密接性,耐久性良好。Next, in order to evaluate the durability of the hard coating, a scratch test was performed. In the comparative example, a hydrogen-free diamond-like carbon film previously used for shear processing applications was used. The testing machine was a scratch testing machine (REVETEST) manufactured by CSM Corporation, and the measurement conditions were set to measurement load: 0 N to 120 N, scratch speed: 10 mm/min, scratch distance: 10 mm, AE sensitivity: 5, indenter : Rockwell, diamond, tip radius: 200 μm, hardware setting: Fn contact 0.9 N, Fn speed: 5 N/s, Fn removal speed: 10 N/s, approach speed: 2%/s. The results are shown in Figure 9. In the sample of the comparative example, peeling of the film occurred at a scratch distance of about 5 mm, but in the example of the present invention, the destruction of the film was not confirmed in the test. From the above, it was confirmed that even when the covering mold of the present invention is applied to a shearing application, it has good adhesion and good durability.

(實施例4) 繼而,實施使用本發明例及比較例的模具的衝裁試驗。使用的衝頭的基材為超硬合金製,衝頭面尺寸為2 mm×2 mm,在衝頭的四角形成曲率半徑0.2 mm的拐角R部。圖10示出衝頭的前端示意圖。在作為本發明例的試樣No.17的衝頭上包覆與實施例1的No.4~6相同的硬質皮膜,在作為比較例的試樣No.18的衝頭上包覆與實施例1的試樣No.7~9相同的硬質皮膜。另外,作為先前例的試樣No.19的衝頭,亦準備了包覆0.3 μm的無氫類金剛石碳膜的衝頭。衝模在本發明例、比較例、先前例的任一個中均包覆有超硬合金製且與實施例1的試樣No.4~6相同的硬質皮膜。準備厚度為0.1 mm,硬度為160~210 HV的卡遜合金作為被加工材,使用衝壓機在衝裁速度800 spm、間隙5 μm、衝頭壓入長度1 mm的條件下進行40萬衝次的衝裁加工。然後,對於加工後的衝頭,使用掃描型電子顯微鏡觀察特別容易發生損傷的拐角R部中的兩個部位(圖10的C、D)。觀察照片如圖11所示。 (Example 4) Next, the punching test using the dies of the example of the present invention and the comparative example was implemented. The base material of the punch used was made of cemented carbide, the size of the punch face was 2 mm×2 mm, and the corner R portion with a curvature radius of 0.2 mm was formed at the four corners of the punch. Figure 10 shows a schematic view of the front end of the punch. The punch of sample No. 17, which is an example of the present invention, was coated with the same hard film as Nos. 4 to 6 of Example 1, and the punch of sample No. 18, which was a comparative example, was coated with the same hard film as that of Example 1. Sample Nos. 7 to 9 have the same hard coatings. In addition, as the punch of the sample No. 19 of the previous example, a punch coated with a 0.3 μm hydrogen-free diamond-like carbon film was also prepared. The die was coated with a hard coating made of cemented carbide and the same as that of Sample Nos. 4 to 6 of Example 1 in any of the examples of the present invention, the comparative examples, and the previous examples. A Carson alloy with a thickness of 0.1 mm and a hardness of 160 to 210 HV was prepared as the workpiece to be processed, and 400,000 punches were performed using a punching machine under the conditions of a punching speed of 800 spm, a gap of 5 μm, and a punch insertion length of 1 mm. punching process. Then, with respect to the processed punch, two parts of the corner R portion where damage is particularly likely to occur were observed using a scanning electron microscope (C and D in FIG. 10 ). The observation photo is shown in Figure 11.

根據圖11的結果,作為本發明例的試樣No.17的衝頭即使在40萬衝次的衝裁加工後損傷亦少,是能夠進一步繼續加工的狀態。與此相對,作為比較例的試樣No.18在拐角R部D確認有大的損傷,作為先前例的試樣No.19在拐角R部C確認有大的損傷。因此,比較例及先前例的衝頭在繼續加工時,有可能在被加工材中早期產生毛刺或形狀精度降低。From the results of FIG. 11 , the punch of Sample No. 17, which is an example of the present invention, has little damage even after punching of 400,000 punches, and is in a state in which further processing can be continued. On the other hand, in the sample No. 18 as a comparative example, a large damage was confirmed in the corner R part D, and in the sample No. 19 as a conventional example, a large damage was confirmed in the corner R part C. Therefore, when the punches of the comparative example and the previous example are continuously processed, there is a possibility that burrs or shape accuracy may be reduced in the workpiece at an early stage.

1:硬質皮膜 2:基材 C、D:拐角R部 1: Hard film 2: Substrate C, D: corner R

圖1是表示本發明的硬質皮膜的例子的掃描型電子顯微鏡照片。 圖2的(a)~圖2的(c)是表示試樣的測定方法的示意圖。 圖3是表示本發明例與比較例的電子探針顯微分析儀(electron probe microanalyzer,EPMA)面分析結果的圖。 圖4是表示實施例的試樣形狀的示意圖。 圖5是圖4的A-A'剖面圖。 圖6是圖4的B-B'剖面圖。 圖7是表示本發明例及比較例的硬度測定結果的圖。 圖8是表示本發明例及比較例的X射線繞射(X-ray diffraction,XRD)測定結果的圖。 圖9的(a)及圖9的(b)是表示本發明例及比較例的劃痕試驗結果的圖。 圖10是實施例中使用的衝頭的前端部示意圖。 圖11是衝裁試驗後的衝頭的拐角部放大照片。 FIG. 1 is a scanning electron microscope photograph showing an example of the hard coating of the present invention. FIGS. 2( a ) to 2 ( c ) are schematic diagrams showing the measurement method of the sample. FIG. 3 is a diagram showing the results of surface analysis by an electron probe microanalyzer (EPMA) according to an example of the present invention and a comparative example. FIG. 4 is a schematic diagram showing the shape of a sample in an example. FIG. 5 is a cross-sectional view taken along line AA′ of FIG. 4 . FIG. 6 is a cross-sectional view taken along line BB′ of FIG. 4 . FIG. 7 is a graph showing the hardness measurement results of the examples of the present invention and the comparative examples. FIG. 8 is a graph showing the results of X-ray diffraction (XRD) measurement of examples of the present invention and comparative examples. FIGS. 9( a ) and 9 ( b ) are diagrams showing scratch test results of the examples of the present invention and the comparative examples. Fig. 10 is a schematic view of the front end portion of the punch used in the examples. Fig. 11 is an enlarged photograph of the corner portion of the punch after the punching test.

1:硬質皮膜 1: Hard film

2:基材 2: Substrate

Claims (3)

一種剪切加工用包覆模具,在模具基材的表面具有包含AlCrSi的氮化物的硬質皮膜,且所述剪切加工用包覆模具中, 所述硬質皮膜的膜厚為0.3 μm~2.0 μm, 所述包覆模具的邊緣部的硬質皮膜的膜厚相對於所述包覆模具的平面部的硬質皮膜的膜厚的比率為0.60~1.40。 A covering mold for shearing, comprising a hard film of nitride of AlCrSi on the surface of a mold base material, and wherein the covering mold for shearing, The thickness of the hard coating is 0.3 μm to 2.0 μm, The ratio of the film thickness of the hard coating in the edge portion of the covering mold to the film thickness of the hard coating in the flat surface portion of the covering mold is 0.60 to 1.40. 一種剪切加工用包覆模具的製造方法,在模具基材的表面包覆包含AlCrSi的氮化物的硬質皮膜,且所述剪切加工用包覆模具的製造方法中, 使用高輸出脈衝濺鍍法將所述硬質皮膜以0.3 μm~2.0 μm的膜厚包覆在模具基材上, 在所述高輸出脈衝濺鍍時使用N 2與Ar的混合氣體, N 2氣體流量相對於Ar氣體流量之比為0.65~1.60。 A method for manufacturing a sheathed mold for shearing processing, wherein a hard film containing a nitride of AlCrSi is coated on the surface of a mold base material, and in the method for manufacturing a sheathed mold for shearing processing, high-output pulse sputtering is used method to coat the hard film on the mold base material with a film thickness of 0.3 μm to 2.0 μm, and use a mixed gas of N 2 and Ar during the high-output pulse sputtering, and the flow rate of N 2 gas is relative to the flow rate of Ar gas The ratio is 0.65 to 1.60. 如請求項2所述的剪切加工用包覆模具的製造方法,其中所述高輸出脈衝濺鍍的硬質皮膜包覆時的最大功率為50 kW~130 kW。The manufacturing method of the covering mold for shearing according to claim 2, wherein the maximum power at the time of hard film covering by the high-output pulse sputtering is 50 kW to 130 kW.
TW111102139A 2021-01-29 2022-01-19 Wrapping mold for shearing and machining and manufacturing method thereof capable of precisely machining material having high hardness and thinner board thickness TW202228874A (en)

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