TW202225126A - Diamond sintered body, and tool comprising diamond sintered body - Google Patents

Diamond sintered body, and tool comprising diamond sintered body Download PDF

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TW202225126A
TW202225126A TW110138862A TW110138862A TW202225126A TW 202225126 A TW202225126 A TW 202225126A TW 110138862 A TW110138862 A TW 110138862A TW 110138862 A TW110138862 A TW 110138862A TW 202225126 A TW202225126 A TW 202225126A
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sintered body
diamond
group
mentioned
diamond sintered
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岩崎大継
植田暁彦
松川倫子
久木野暁
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日商住友電工硬質合金股份有限公司
日商住友電氣工業股份有限公司
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    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C26/00Alloys containing diamond or cubic or wurtzitic boron nitride, fullerenes or carbon nanotubes
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J3/00Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
    • B01J3/06Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
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    • B22F1/00Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/12Metallic powder containing non-metallic particles
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
    • B22FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/10Sintering only
    • B22F3/1017Multiple heating or additional steps
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
    • B22FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/12Both compacting and sintering
    • B22F3/14Both compacting and sintering simultaneously
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23BTURNING; BORING
    • B23B27/00Tools for turning or boring machines; Tools of a similar kind in general; Accessories therefor
    • B23B27/14Cutting tools of which the bits or tips or cutting inserts are of special material
    • B23B27/148Composition of the cutting inserts
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23BTURNING; BORING
    • B23B27/00Tools for turning or boring machines; Tools of a similar kind in general; Accessories therefor
    • B23B27/14Cutting tools of which the bits or tips or cutting inserts are of special material
    • B23B27/18Cutting tools of which the bits or tips or cutting inserts are of special material with cutting bits or tips or cutting inserts rigidly mounted, e.g. by brazing
    • B23B27/20Cutting tools of which the bits or tips or cutting inserts are of special material with cutting bits or tips or cutting inserts rigidly mounted, e.g. by brazing with diamond bits or cutting inserts
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00Carbon; Compounds thereof
    • C01B32/25Diamond
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00Carbon; Compounds thereof
    • C01B32/25Diamond
    • C01B32/28After-treatment, e.g. purification, irradiation, separation or recovery
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/52Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbon, e.g. graphite
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C1/00Making non-ferrous alloys
    • C22C1/04Making non-ferrous alloys by powder metallurgy
    • C22C1/05Mixtures of metal powder with non-metallic powder
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
    • B22FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F5/00Manufacture of workpieces or articles from metallic powder characterised by the special shape of the product
    • B22F2005/001Cutting tools, earth boring or grinding tool other than table ware
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23BTURNING; BORING
    • B23B2226/00Materials of tools or workpieces not comprising a metal
    • B23B2226/31Diamond
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    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
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    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30Constituents and secondary phases not being of a fibrous nature
    • C04B2235/42Non metallic elements added as constituents or additives, e.g. sulfur, phosphor, selenium or tellurium
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    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/74Physical characteristics
    • C04B2235/78Grain sizes and shapes, product microstructures, e.g. acicular grains, equiaxed grains, platelet-structures
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Abstract

This diamond sintered body includes diamond particles, wherein the content of the diamond particles is 80 vol% to 99 vol% with respect to the diamond sintered body, the average particle diameter of the diamond particles is 0.1 [mu]m to 50 [mu]m, and the dislocation density of the diamond particles is 1.2*10<SP>16</SP> m<SP>-2</SP> to 5.4*10<SP>19</SP>m<SP>-2</SP>.

Description

鑽石燒結體、及具備鑽石燒結體之工具Diamond sintered body, and tool with diamond sintered body

本發明係關於一種鑽石燒結體、及具備鑽石燒結體之工具。The present invention relates to a diamond sintered body and a tool provided with the diamond sintered body.

由於鑽石燒結體不僅具有優異之硬度,而且不具有硬度之方向性及解理性,因此廣泛地用於切削刀具、修整器及模具等工具、以及挖掘鑽頭等。Since the diamond sintered body not only has excellent hardness, but also has no directionality and cleavage of hardness, it is widely used in tools such as cutting tools, dressers and molds, and excavation drills.

先前之鑽石燒結體係藉由將作為原料之鑽石之粉末與燒結助劑或結合材料一起於使鑽石保持熱力學穩定之高壓高溫(一般而言,壓力為5~8 GPa左右及溫度為1300~2200℃左右)之條件下進行燒結而獲得。作為燒結助劑,可使用:Fe、Co及Ni等鐵族元素金屬、CaCO 3等碳酸鹽等。作為結合材料,可使用SiC等陶瓷等。 In the previous diamond sintering system, the powder of the diamond as the raw material is combined with sintering aids or binding materials to keep the diamond thermodynamically stable at high pressure and high temperature (generally, the pressure is about 5-8 GPa and the temperature is 1300-2200 ℃. It is obtained by sintering under the conditions of about) . As the sintering aid, iron group element metals such as Fe, Co, and Ni, carbonates such as CaCO 3 , and the like can be used. As the bonding material, ceramics such as SiC can be used.

例如,日本專利特開2005-239472號公報(專利文獻1)中揭示了一種高強度、高耐磨性鑽石燒結體,其係具備平均粒徑為2 μm以下之燒結鑽石粒子、及剩餘部分之結合相者,且其特徵在於:上述鑽石燒結體中之上述燒結鑽石粒子之含有率為80體積%以上98體積%以下,上述結合相包含上述結合相中之含有率為0.5質量%以上且未達50質量%之選自由鈦、鋯、鉿、釩、鈮、鉭、鉻及鉬所組成之群中之至少1種以上元素、以及上述結合相中之含有率為50質量%以上且未達99.5質量%之鈷,上述選自由鈦、鋯、鉿、釩、鈮、鉭、鉻及鉬所組成之群中之至少1種以上元素之一部分或全部以平均粒徑0.8 μm以下之碳化物粒子之形式存在,上述碳化物粒子之組織不連續,相鄰之上述鑽石粒子彼此相互結合。 又,專利文獻1中揭示了一種高強度、高耐磨性鑽石燒結體之製造方法,其係上述高強度、高耐磨性鑽石燒結體之製造方法,且其特徵在於:使用帶型超高壓裝置,於5.7 GPa以上7.5 GPa以下之壓力、1400℃以上1900℃以下之溫度之條件下進行燒結。 [先前技術文獻] [專利文獻] For example, Japanese Patent Laid-Open No. 2005-239472 (Patent Document 1) discloses a high-strength, high-wear-resistance diamond sintered body comprising sintered diamond particles having an average particle size of 2 μm or less, and a remainder of A bond phase, and is characterized in that: the content rate of the sintered diamond particles in the diamond sintered body is not less than 80% by volume and not more than 98% by volume; At least one or more elements selected from the group consisting of titanium, zirconium, hafnium, vanadium, niobium, tantalum, chromium and molybdenum in an amount of 50% by mass, and the content in the above-mentioned combined phase is not less than 50% by mass and less than 50% by mass 99.5 mass % of cobalt, part or all of the above-mentioned at least one element selected from the group consisting of titanium, zirconium, hafnium, vanadium, niobium, tantalum, chromium and molybdenum carbide particles with an average particle size of 0.8 μm or less In this form, the structure of the carbide particles is discontinuous, and the adjacent diamond particles are bonded to each other. In addition, Patent Document 1 discloses a method for producing a high-strength, high-wear-resistance diamond sintered body, which is the above-mentioned method for producing a high-strength, high-wear-resistance diamond sintered body, and is characterized in that a belt-type ultra-high pressure is used. The device is sintered at a pressure of 5.7 GPa or more and 7.5 GPa or less and a temperature of 1400°C or more and 1900°C or less. [Prior Art Literature] [Patent Literature]

[專利文獻1]日本專利特開2005-239472號公報[Patent Document 1] Japanese Patent Laid-Open No. 2005-239472

本發明之鑽石燒結體 係包含鑽石粒子者,且 上述鑽石粒子之含有率相對於上述鑽石燒結體而言為80體積%以上99體積%以下, 上述鑽石粒子之平均粒徑為0.1 μm以上50 μm以下, 上述鑽石粒子之位錯密度為1.2×10 16m -2以上5.4×10 19m -2以下。 The diamond sintering system of the present invention includes diamond particles, and the content of the diamond particles is 80% by volume to 99% by volume relative to the diamond sintered body, and the average particle diameter of the diamond particles is 0.1 μm to 50 μm. , the dislocation density of the diamond particles is 1.2×10 16 m -2 or more and 5.4×10 19 m -2 or less.

本發明之工具具備上述鑽石燒結體。The tool of the present invention includes the above-mentioned diamond sintered body.

[發明所欲解決之問題] 專利文獻1之鑽石燒結體若應用於切削工具等,則有時刀尖會產生破損。又,近年來要求更加高效率(例如,進給速度較快)之切削加工,從而期待進一步提昇鑽石燒結體之性能(例如,抑制龜裂擴展等)。 [Problems to be Solved by Invention] When the diamond sintered body of Patent Document 1 is applied to a cutting tool or the like, the cutting edge may be damaged. In addition, in recent years, more efficient (for example, higher feed rate) cutting processing is required, and further improvement in the performance of the diamond sintered body (for example, suppression of crack propagation, etc.) is expected.

本發明係鑒於上述情況而完成者,其目的在於提供一種具有優異之耐龜裂擴展性之鑽石燒結體、及具備鑽石燒結體之工具。The present invention was made in view of the above-mentioned circumstances, and an object thereof is to provide a diamond sintered body having excellent crack propagation resistance, and a tool provided with the diamond sintered body.

[本發明之效果] 根據本發明,能夠提供一種具有優異之耐龜裂擴展性之鑽石燒結體、及具備鑽石燒結體之工具。 [Effect of the present invention] According to the present invention, it is possible to provide a diamond sintered body having excellent crack propagation resistance, and a tool including the diamond sintered body.

[本發明之實施形態之說明] 首先,列出本發明之實施態樣來進行說明。 [1]本發明之一態樣之鑽石燒結體 係包含鑽石粒子者,且 上述鑽石粒子之含有率相對於上述鑽石燒結體而言為80體積%以上99體積%以下, 上述鑽石粒子之平均粒徑為0.1 μm以上50 μm以下, 上述鑽石粒子之位錯密度為1.2×10 16m -2以上5.4×10 19m -2以下。 [Description of Embodiments of the Present Invention] First, embodiments of the present invention will be described. [1] The diamond sintering system of one aspect of the present invention includes diamond particles, and the content rate of the diamond particles is 80% by volume to 99% by volume relative to the above-mentioned diamond sintered body, and the average particle size of the diamond particles is The dislocation density of the diamond particles is 1.2×10 16 m -2 or more and 5.4×10 19 m -2 or less.

上述鑽石燒結體具有優異之耐龜裂擴展性。此處,所謂「耐龜裂擴展性」,係指針對切削時鑽石燒結體中所產生之龜裂受到外力時發生之擴展之耐性。The above-mentioned diamond sintered body has excellent crack propagation resistance. Here, the term "crack propagation resistance" refers to the resistance to propagation of cracks generated in the diamond sintered body during cutting when an external force is applied.

[2]上述鑽石粒子之位錯密度較佳為1.5×10 16m -2以上1.0×10 17m -2以下。藉由如此進行規定,使得鑽石燒結體之耐龜裂擴展性更加優異。 [2] The dislocation density of the above-mentioned diamond particles is preferably 1.5×10 16 m -2 or more and 1.0×10 17 m -2 or less. By specifying in this way, the crack growth resistance of the diamond sintered body is further improved.

[3]上述鑽石燒結體較佳為,進而包含結合相,且 上述結合相含有: 選自由如下單質金屬、合金及金屬間化合物所組成之群中之至少1種,上述單質金屬、合金及金屬間化合物包含選自由週期表之第4族元素、第5族元素、第6族元素、鐵、鋁、矽、鈷及鎳所組成之群中之至少1種金屬元素;或 選自由如下化合物及來自上述化合物之固溶體所組成之群中之至少1種,上述化合物由選自由週期表之第4族元素、第5族元素、第6族元素、鐵、鋁、矽、鈷及鎳所組成之群中之至少1種金屬元素、以及選自由氮、碳、硼及氧所組成之群中之至少1種非金屬元素所構成。 藉由如此進行規定,使得鑽石燒結體之耐龜裂擴展性更加優異。 [3] Preferably, the above-mentioned diamond sintered body further includes a bond phase, and The above combination contains: At least one selected from the group consisting of the following elemental metals, alloys, and intermetallic compounds, wherein the elemental metals, alloys, and intermetallic compounds include elements selected from Group 4, Group 5, and Group 6 of the periodic table , at least one metal element from the group consisting of iron, aluminum, silicon, cobalt and nickel; or At least one selected from the group consisting of the following compounds and solid solutions from the above compounds, the above compounds are selected from the group 4 elements, group 5 elements, and group 6 elements of the periodic table, iron, aluminum, silicon , at least one metal element from the group consisting of cobalt and nickel, and at least one non-metal element selected from the group consisting of nitrogen, carbon, boron and oxygen. By specifying in this way, the crack growth resistance of the diamond sintered body is further improved.

[4]上述結合相較佳為含有鈷。藉由如此進行規定,使得鑽石燒結體之耐龜裂擴展性更加優異。[4] The above-mentioned bonding phase preferably contains cobalt. By specifying in this way, the crack growth resistance of the diamond sintered body is further improved.

[5]本發明之一態樣之工具具備上述鑽石燒結體。[5] A tool according to an aspect of the present invention includes the above-mentioned diamond sintered body.

上述工具由於具備耐龜裂擴展性優異之鑽石燒結體,因此具有對各種材料加工時優異之耐破損性及優異之耐衝擊性。此處,所謂「耐破損性」,係指針對工具於加工材料時所產生之缺損之耐性。所謂「耐衝擊性」,係指針對加工材料時自外部施加之瞬間力之耐性。Since the above-mentioned tool has a diamond sintered body excellent in crack propagation resistance, it has excellent fracture resistance and excellent impact resistance when machining various materials. Here, the so-called "breakage resistance" refers to the resistance to the defect that occurs when the tool is processing the material. The so-called "impact resistance" refers to the resistance to momentary force applied from the outside when the material is processed.

[本發明之實施形態之詳情] 以下,對本發明之實施形態之詳情進行說明。再者,本發明並不受該等例示限定。此處,本說明書中,「A~Z」形式之表達係指範圍之上限下限(即,A以上Z以下),且於A未記載有單位而僅Z記載有單位之情形時,A之單位與Z之單位相同。 [Details of Embodiments of the Present Invention] Hereinafter, the details of the embodiment of the present invention will be described. In addition, this invention is not limited by these illustrations. Here, in this specification, the expression in the form of "A to Z" refers to the upper and lower limits of the range (that is, A or more and Z or less), and when A does not describe a unit but only Z describes a unit, the unit of A is Same unit as Z.

≪鑽石燒結體≫ 本實施形態之鑽石燒結體 係包含鑽石粒子者,且 上述鑽石粒子之含有率相對於上述鑽石燒結體而言為80體積%以上99體積%以下, 上述鑽石粒子之平均粒徑為0.1 μm以上50 μm以下, 上述鑽石粒子之位錯密度為1.2×10 16m -2以上5.4×10 19m -2以下。 ≪Diamond sintered body≫ The diamond sintered system of the present embodiment contains diamond particles, and the content rate of the above-mentioned diamond particles is 80% by volume to 99% by volume relative to the above-mentioned diamond sintered body, and the average particle size of the diamond particles is 0.1 μm or more and 50 μm or less, and the dislocation density of the above-mentioned diamond particles is 1.2×10 16 m -2 or more and 5.4×10 19 m -2 or less.

上述鑽石燒結體包含鑽石粒子。即,鑽石燒結體係以作為粒子之鑽石為基本組成。於本實施形態之一態樣中,亦可將鑽石粒子理解為鑽石之晶粒。上述鑽石燒結體較佳為進而包含由燒結助劑及結合材料之一者或兩者所形成之結合相(黏合劑)。關於上述鑽石粒子及上述結合相,將於後文中進行說明。The above-mentioned diamond sintered body contains diamond particles. That is, the diamond sintering system is basically composed of diamonds as particles. In one aspect of this embodiment, diamond particles can also be understood as crystal grains of diamonds. The above-mentioned diamond sintered body preferably further includes a bonding phase (binder) formed by one or both of a sintering aid and a bonding material. The above-mentioned diamond particles and the above-mentioned bonded phase will be described later.

上述鑽石燒結體係包含複數個鑽石粒子之多結晶體。因此,上述鑽石燒結體不具有如單晶之方向性(各向異性)及解理性,於所有方位上具有各向同性之硬度及耐龜裂擴展性。The above-mentioned diamond sintering system includes a polycrystalline body of a plurality of diamond particles. Therefore, the above-mentioned diamond sintered body has no orientation (anisotropy) and cleavage like a single crystal, but has isotropic hardness and crack growth resistance in all orientations.

鑽石燒結體可於表現出本實施形態之效果之範圍內包含不可避免之雜質。作為不可避免之雜質,例如可例舉:氫、氧等。The diamond sintered body may contain unavoidable impurities within the range in which the effects of the present embodiment are exhibited. As an unavoidable impurity, hydrogen, oxygen, etc. are mentioned, for example.

<鑽石粒子> (鑽石粒子之含有率) 於本實施形態中,上述鑽石粒子之含有率相對於上述鑽石燒結體而言為80體積%以上99體積%以下,較佳為80體積%以上90體積%以下。 <Diamond Particles> (content rate of diamond particles) In the present embodiment, the content of the diamond particles is 80% by volume or more and 99% by volume or less, preferably 80% by volume or more and 90% by volume or less, with respect to the above-mentioned diamond sintered body.

鑽石燒結體中之鑽石粒子之含有率(體積%)及下述結合相之含有率(體積%)可藉由如下方式來確認,即,使用掃描式電子顯微鏡(SEM)(日本電子公司製造之「JSM-7800F」(商品名))所附帶之能量分散型X射線分析裝置(EDX)(Octane Elect EDS(Energy Dispersive Spectroscopy,能量散佈光譜學)系統)(以下,亦記載為「SEM-EDX」),對鑽石燒結體實施組織觀察、元素分析等。具體之測定方法如下所述。The content ratio (volume %) of diamond particles in the diamond sintered body and the content ratio (volume %) of the following binding phase can be confirmed by using a scanning electron microscope (SEM) (manufactured by Nippon Electronics Co., Ltd.). Energy dispersive X-ray analyzer (EDX) (Octane Elect EDS (Energy Dispersive Spectroscopy) system) (hereinafter, also referred to as "SEM-EDX") attached to "JSM-7800F" (trade name) ), microstructure observation, elemental analysis, etc. were performed on the diamond sintered body. The specific measurement method is as follows.

首先,於鑽石燒結體之任意位置進行切割,製作包含鑽石燒結體之截面之試樣。截面之製作可使用聚焦離子束裝置、截面拋光儀裝置等。繼而,藉由SEM對上述截面進行觀察,獲得反射電子圖像。於反射電子圖像中,存在鑽石粒子之區域成為黑色區域,存在結合相之區域成為灰色區域或白色區域。適當調整藉由SEM對上述截面進行觀察時之倍率,以便使得測定視野內所觀察到之鑽石粒子之數量為100個以上。例如,於鑽石粒子之平均粒徑為0.5 μm之情形時,藉由SEM對上述截面進行觀察時之倍率可為10000倍。於鑽石粒子之平均粒徑為30 μm之情形時,藉由SEM對上述截面進行觀察時之倍率可為200倍。First, cutting is performed at any position of the diamond sintered body, and a sample including the cross-section of the diamond sintered body is produced. For the fabrication of the cross section, a focused ion beam apparatus, a cross section polisher apparatus, and the like can be used. Next, the above-mentioned cross section was observed by SEM, and a backscattered electron image was obtained. In the reflected electron image, the area where diamond particles are present becomes a black area, and the area where a combined phase exists becomes a gray area or a white area. The magnification at the time of observing the above-mentioned cross section by SEM is appropriately adjusted so that the number of diamond particles observed in the measurement field is 100 or more. For example, when the average particle diameter of the diamond particles is 0.5 μm, the magnification of observing the above-mentioned cross section by SEM can be 10,000 times. When the average particle diameter of the diamond particles is 30 μm, the magnification of observing the above-mentioned cross section by SEM can be 200 times.

繼而,針對上述反射電子圖像,使用圖像解析軟體(三谷商事(股)之「Win ROOF ver.7.4.5」、「WinROOF2018」等)來進行二值化處理。上述圖像解析軟體基於圖像資訊自動設定適當之二值化之閾值(不會由測定者隨意地設定閾值)。又,發明人等確認到,即便在圖像之明度等發生變動之情形時,測定結果亦不會有較大變化。根據二值化處理後之圖像,計算出來自暗視野之像素(來自鑽石粒子之像素)於測定視野之面積中所占之面積比率。藉由將所計算出之面積比率視為體積%,可求出鑽石粒子之含有率(體積%)。Next, the above-mentioned reflected electron image is subjected to binarization processing using image analysis software ("Win ROOF ver.7.4.5", "WinROOF2018", etc. of Mitani Corporation). The above-mentioned image analysis software automatically sets an appropriate binarization threshold based on image information (threshold is not arbitrarily set by the measurer). Furthermore, the inventors and the like have confirmed that the measurement result does not change significantly even when the brightness of the image or the like is changed. According to the binarized image, the area ratio of the pixels from the dark field (pixels from the diamond particles) in the area of the measurement field is calculated. By considering the calculated area ratio as volume %, the content ratio (volume %) of diamond particles can be obtained.

藉由根據二值化處理後之圖像,計算出來自明視野之像素(來自結合相之像素)於測定視野之面積中所占之面積比率,可求出結合相之含有率(體積%)。By calculating the area ratio of the pixels from the bright field (pixels from the binding phase) in the area of the measurement field of view based on the binarized image, the content rate (volume %) of the binding phase can be obtained.

本發明人等確認到,只要是對同一試樣測定鑽石燒結體中之鑽石粒子之含有率(體積%)及下述結合相之含有率(體積%),即便改變測定視野之選擇部位來進行複數次計算,測定結果亦幾乎不存在差異。即,本發明人等認為即便任意設定測定視野,亦不會隨意變化。The inventors of the present invention have confirmed that as long as the content of diamond particles (% by volume) in the diamond sintered body and the content (% by volume) of the following binding phase are measured for the same sample, the measurement can be performed even if the selected portion of the measurement field of view is changed. There is almost no difference in the measurement results after multiple calculations. That is, the present inventors considered that even if the measurement field of view is arbitrarily set, it does not change arbitrarily.

再者,關於來自暗視野之像素係來自鑽石粒子這一情況,可藉由對鑽石燒結體利用SEM-EDX進行元素分析來確認。In addition, the fact that the pixels from the dark field are derived from diamond particles can be confirmed by elemental analysis of the diamond sintered body by SEM-EDX.

(鑽石粒子之平均粒徑) 鑽石粒子之平均粒徑為0.1 μm以上50 μm以下,較佳為0.2 μm以上40 μm以下。藉由鑽石粒子之平均粒徑為0.1 μm以上,鑽石粒子被緻密地燒結,從而鑽石燒結體之耐破損性變得優異。藉由鑽石粒子之平均粒徑為50 μm以下,鑽石燒結體不具有各向異性,從而用作切削工具之刀尖時切削穩定性優異。 (Average particle size of diamond particles) The average particle diameter of the diamond particles is 0.1 μm or more and 50 μm or less, preferably 0.2 μm or more and 40 μm or less. When the average particle diameter of the diamond particles is 0.1 μm or more, the diamond particles are densely sintered, and the diamond sintered body has excellent fracture resistance. When the average particle diameter of the diamond particles is 50 μm or less, the diamond sintered body does not have anisotropy, so that it is excellent in cutting stability when used as a cutting edge of a cutting tool.

於本實施形態中,鑽石粒子之平均粒徑係指藉由如下方式獲得之值,即,於任意選出之5處各測定視野內,對複數個鑽石粒子分別測定中值粒徑d50,並計算出其等之平均值。具體方法如下所述。In this embodiment, the average particle diameter of the diamond particles refers to the value obtained by the following method, that is, in each measurement field of view at 5 places randomly selected, the median diameter d50 of the plurality of diamond particles is respectively measured, and calculated. Take the average value. The specific method is as follows.

首先,於鑽石燒結體之任意位置進行切割,製作包含鑽石燒結體之截面之試樣。截面之製作可使用聚焦離子束裝置、截面拋光儀裝置等。繼而,藉由SEM對上述截面進行觀察,獲得反射電子圖像。於反射電子圖像中,存在鑽石粒子之區域成為黑色區域,存在結合相之區域成為灰色區域或白色區域。適當調整藉由SEM對上述截面進行觀察時之倍率,以便使得測定視野內所觀察到之鑽石粒子之數量為100個以上。例如,於鑽石粒子之平均粒徑為0.5 μm之情形時,藉由SEM對上述截面進行觀察時之倍率可為10000倍。於鑽石粒子之平均粒徑為30 μm之情形時,藉由SEM對上述截面進行觀察時之倍率可為200倍。First, cutting is performed at any position of the diamond sintered body, and a sample including the cross-section of the diamond sintered body is produced. For the fabrication of the cross section, a focused ion beam apparatus, a cross section polisher apparatus, and the like can be used. Next, the above-mentioned cross section was observed by SEM, and a backscattered electron image was obtained. In the reflected electron image, the area where diamond particles are present becomes a black area, and the area where a combined phase exists becomes a gray area or a white area. The magnification at the time of observing the above-mentioned cross section by SEM is appropriately adjusted so that the number of diamond particles observed in the measurement field is 100 or more. For example, when the average particle diameter of the diamond particles is 0.5 μm, the magnification of observing the above-mentioned cross section by SEM can be 10,000 times. When the average particle diameter of the diamond particles is 30 μm, the magnification of observing the above-mentioned cross section by SEM can be 200 times.

針對5個SEM圖像,分別於測定視野內所觀察到之鑽石粒子之晶界分離之狀態下,使用圖像處理軟體(三谷商事(股)之「Win ROOF ver.7.4.5」、「WinROOF2018」等)計算出各鑽石粒子之圓相當徑。此時,局部超出上述測定視野之外之鑽石粒子並不計算在內。For the five SEM images, image processing software ("Win ROOF ver.7.4.5" and "WinROOF2018" of Mitani Shoji Co., Ltd.) were used in the state where the grain boundaries of the diamond particles observed in the measurement field were separated. ", etc.) to calculate the circle equivalent diameter of each diamond particle. At this time, diamond particles that partially exceed the above-mentioned measurement field of view are not counted.

根據所計算出之各鑽石粒子之圓相當徑之分佈,計算出各測定視野內之中值粒徑d50,並計算出其等之平均值。該平均值相當於鑽石粒子之平均粒徑。According to the calculated distribution of the circle-equivalent diameter of each diamond particle, the median diameter d50 in each measurement field of view is calculated, and the average value thereof is calculated. This average value corresponds to the average particle size of the diamond particles.

再者,本發明人等確認到,只要是對同一試樣計算出鑽石粒子之平均粒徑,即便改變鑽石燒結體中之測定視野之選擇部位來進行複數次計算,測定結果亦幾乎不存在差異。即,本發明人等認為即便任意設定測定視野,亦不會隨意變化。Furthermore, the present inventors have confirmed that, as long as the average particle diameter of the diamond particles is calculated for the same sample, even if the selected part of the measurement field of view in the diamond sintered body is changed to perform the calculation several times, there is almost no difference in the measurement results. . That is, the present inventors considered that even if the measurement field of view is arbitrarily set, it does not change arbitrarily.

(鑽石粒子之位錯密度) 上述鑽石粒子之位錯密度為1.2×10 16m -2以上5.4×10 19m -2以下,較佳為1.5×10 16m -2以上1.0×10 17m -2以下。藉由鑽石粒子之位錯密度為1.2×10 16m -2以上,相對較多地存在不動位錯,因此鑽石粒子中所產生之龜裂擴展得到抑制,從而鑽石燒結體之耐龜裂擴展性變得優異。藉由鑽石粒子之位錯密度為5.4×10 19m -2以下,抑制鑽石粒子產生龜裂,從而鑽石燒結體之耐衝擊性變得優異。 (Dislocation Density of Diamond Particles) The dislocation density of the diamond particles is 1.2×10 16 m -2 or more and 5.4×10 19 m -2 or less, preferably 1.5×10 16 m -2 or more and 1.0×10 17 m - 2 or less. Since the dislocation density of the diamond particles is 1.2×10 16 m -2 or more, there are relatively many immobile dislocations, so that the crack propagation generated in the diamond particles is suppressed, and the crack propagation resistance of the diamond sintered body is improved. become excellent. When the dislocation density of the diamond particles is 5.4×10 19 m −2 or less, the occurrence of cracks in the diamond particles is suppressed, and the impact resistance of the diamond sintered body becomes excellent.

先前並未關注過鑽石燒結體中之鑽石粒子之位錯密度與該鑽石燒結體之物性之關聯關係。因此,本發明人等針對鑽石燒結體中之鑽石粒子之位錯密度與鑽石燒結體之耐龜裂擴展性之關係努力進行了調查。其結果,首次發現了若使鑽石粒子之位錯密度較先前所存在之鑽石燒結體提高,則鑽石粒子中之(111)結晶面內之滑動運動得到抑制,以此該耐龜裂擴展性得到提昇。再者,根據該調查可明確,先前之鑽石燒結體(例如,專利文獻1中所記載之鑽石燒結體)之鑽石粒子之位錯密度為1.01×10 16m -2以上且未達1.18×10 16m -2The relationship between the dislocation density of the diamond particles in the diamond sintered body and the physical properties of the diamond sintered body has not been paid attention to before. Therefore, the present inventors have made efforts to investigate the relationship between the dislocation density of the diamond particles in the diamond sintered body and the crack growth resistance of the diamond sintered body. As a result, it was found for the first time that if the dislocation density of the diamond particles was increased compared with the diamond sintered body that existed before, the sliding motion in the (111) crystal plane in the diamond particles was suppressed, and the crack growth resistance was obtained. promote. Furthermore, according to this investigation, it became clear that the dislocation density of diamond particles in the conventional diamond sintered body (for example, the diamond sintered body described in Patent Document 1) was 1.01×10 16 m −2 or more and less than 1.18×10 16 m -2 .

於本說明書中,鑽石燒結體之位錯密度係於大型輻射設施(例如,九州同步加速器輻射研究中心(Kyushu Synchrotron Light Research Center)(佐賀縣))中進行測定。具體而言係利用下述方法進行測定。In this specification, the dislocation density of the diamond sintered body is measured in a large-scale radiation facility (eg, Kyushu Synchrotron Light Research Center (Saga Prefecture)). Specifically, it is measured by the following method.

準備由鑽石燒結體所構成之樣本。樣本之大小係觀察面為3 mm×6 mm,厚度為0.4 mm。使用平均粒徑3 μm之鑽石漿料,對樣本之觀察面進行鏡面研磨之後,使其於鹽酸中浸漬72小時。藉此,於該樣本之觀察面內,結合相溶解於鹽酸中,而鑽石粒子殘留。Prepare samples consisting of diamond sintered bodies. The size of the sample is 3 mm × 6 mm for the observation surface, and the thickness is 0.4 mm. Using diamond slurry with an average particle size of 3 μm, the observation surface of the sample was mirror-polished, and then immersed in hydrochloric acid for 72 hours. Thereby, in the observation surface of the sample, the bonded phase was dissolved in the hydrochloric acid, and the diamond particles remained.

針對該樣本,於下述條件下進行X射線繞射測定,獲得來自作為鑽石之主要方位之(111)、(220)、(311)、(331)、(422)、(440)、(531)之各方位面之繞射峰之譜線輪廓。For this sample, X-ray diffraction measurement was performed under the following conditions to obtain (111), (220), (311), (331), (422), (440), (531) which are the main orientations of the diamond. ) of the line profiles of diffraction peaks at each plane.

(X射線繞射測定條件) X射線源:放射光 裝置條件:檢測器NaI(藉由適當之ROI來截止螢光) 能量:18 keV(波長:0.6888 Å) 分光結晶:Si(111) 入射狹縫:寬度3 mm×高度0.5 mm 受光狹縫:雙狹縫(寬度3 mm×高度0.5 mm) 鏡:塗鉑鏡 入射角:2.5 mrad 掃描方法:2θ~θ掃描 測定峰值:鑽石之(111)、(220)、(311)、(331)、(422)、(440)、(531)這7個。但是,於根據織構、配向等難以獲得輪廓之情形時,排除其面指數之峰值。 測定條件:使與各測定峰值對應之半峰全幅值中測定點為9點以上。峰頂強度設為2000 counts以上。由於峰之下緣亦用於解析,因此測定範圍設為半峰全幅值之10倍左右。 (X-ray diffraction measurement conditions) X-ray source: radioactive light Device condition: Detector NaI (fluorescence cut off by appropriate ROI) Energy: 18 keV (wavelength: 0.6888 Å) Spectrocrystalline: Si(111) Incident slit: width 3 mm × height 0.5 mm Light receiving slit: Double slit (width 3 mm x height 0.5 mm) Mirror: Platinum coated mirror Incidence angle: 2.5 mrad Scanning method: 2θ~θ scanning Measured peaks: 7 diamonds (111), (220), (311), (331), (422), (440), (531). However, when it is difficult to obtain an outline due to texture, orientation, etc., the peak of the surface index is excluded. Measurement conditions: 9 or more measurement points in the full width at half maximum corresponding to each measurement peak. The peak top intensity was set to 2000 counts or more. Since the lower edge of the peak is also used for analysis, the measurement range is set to about 10 times the full width at half maximum.

藉由上述X射線繞射測定所獲得之譜線輪廓之形狀包括由樣本之不均勻應變等物理量引起之真實之擴展、及由裝置引起之擴展兩者。為了求出不均勻應變及微晶尺寸,自所測得之譜線輪廓去除由裝置引起之成分,獲得真實之譜線輪廓。真實之譜線輪廓係藉由如下方式獲得,即,利用偽Voigt(Pseudo-Voigt)函數對所獲得之譜線輪廓及由裝置產生之譜線輪廓進行擬合,並減去由裝置產生之譜線輪廓。使用LaB 6作為用以去除由裝置引起之繞射線擴展之標準樣品。又,於使用平行度較高之放射光之情形時,亦可將由裝置引起之繞射線擴展視為0。 The shape of the spectral line profile obtained by the above-mentioned X-ray diffraction measurement includes both the true spread caused by physical quantities such as uneven strain of the sample, and the spread caused by the device. In order to determine the non-uniform strain and crystallite size, the components caused by the device were removed from the measured spectral line profile to obtain the true spectral line profile. The true spectral line profile is obtained by fitting the obtained spectral line profile and the spectral line profile generated by the device using a pseudo-Voigt (Pseudo-Voigt) function, and subtracting the spectrum generated by the device line silhouette. LaB 6 was used as a standard to remove the diffraction line spread caused by the device. Furthermore, in the case of using radiated light with a high degree of parallelism, the ray spread caused by the device can also be regarded as zero.

藉由使用修正Williamson-Hall法及修正Warren-Averbach法,對所獲得之真實之譜線輪廓進行解析而計算出位錯密度。修正Williamson-Hall法及修正Warren-Averbach法係用以求出位錯密度之公知之譜線輪廓解析法。The dislocation density was calculated by analyzing the obtained real spectral line profiles using the modified Williamson-Hall method and the modified Warren-Averbach method. The modified Williamson-Hall method and the modified Warren-Averbach method are well-known spectral line profile analysis methods for finding the dislocation density.

修正Williamson-Hall法之式如下述式(I)所示。 [數1]

Figure 02_image009
The formula for modifying the Williamson-Hall method is shown in the following formula (I). [Number 1]
Figure 02_image009

上述式(I)中,ΔK表示譜線輪廓之半值寬度。D表示微晶尺寸。M表示配置參數。b表示柏格斯向量。ρ表示位錯密度。K表示散射向量。O(K 2C)表示K 2C之高次項。C表示對比因子(contrast factor)之平均值。 In the above formula (I), ΔK represents the half-value width of the spectral line profile. D represents crystallite size. M represents a configuration parameter. b represents the Burgers vector. ρ represents the dislocation density. K represents the scattering vector. O(K 2 C) represents a higher order term of K 2 C. C represents the mean value of the contrast factor.

上述式(I)中之C由下述式(II)所表示。 C=C h00[1-q(h 2k 2+h 2l 2+k 2l 2)/(h 2+k 2+l 2) 2]     (II) C in the above formula (I) is represented by the following formula (II). C=C h00 [1-q(h 2 k 2 +h 2 l 2 +k 2 l 2 )/(h 2 +k 2 +l 2 ) 2 ] (II)

上述式(II)中,螺旋位錯與刃形位錯中之各自之對比因子C h00及與對比因子相關之係數q係使用計算代碼ANIZC,以滑動系為<110>{111}、彈性剛度C 11為1076 GPa、C 12為125 GPa、C 44為576 GPa而求出。上述式(II)中,h、k及l分別相當於鑽石之密勒指數(hkl)。對比因子C h00係螺旋位錯0.183、刃形位錯0.204。與對比因子相關之係數q係螺旋位錯1.35、刃形位錯0.30。再者,螺旋位錯比率固定在0.5,刃形位錯比率固定在0.5。 In the above formula (II), the respective contrast factor C h00 of screw dislocation and edge dislocation and the coefficient q related to the contrast factor are calculated using the calculation code ANIZC, the sliding system is <110>{111}, the elastic stiffness is C 11 is 1076 GPa, C 12 is 125 GPa, and C 44 is 576 GPa. In the above formula (II), h, k and l correspond to the Miller index (hkl) of the diamond, respectively. The contrast factor C h00 is 0.183 for screw dislocation and 0.204 for edge dislocation. The coefficient q related to the contrast factor is 1.35 for screw dislocation and 0.30 for edge dislocation. Furthermore, the screw dislocation ratio was fixed at 0.5, and the edge dislocation ratio was fixed at 0.5.

又,於位錯與不均勻應變之間,使用對比因子C而下述式(III)之關係成立。下述式(III)中,R e表示位錯之有效半徑。ε(L)表示不均勻應變。 <ε(L) 2>=(ρCb 2/4π)ln(R e/L)       (III) In addition, between the dislocation and the uneven strain, the relation of the following formula (III) is established using the contrast factor C. In the following formula (III), Re represents the effective radius of dislocation. ε(L) represents uneven strain. <ε(L) 2 >=(ρCb 2 /4π)ln(R e /L) (III)

根據上述式(III)之關係、及Warren-Averbach式,可如下述式(IV)進行表示,且作為修正Warren-Averbach法可求出位錯密度ρ及微晶尺寸。下述式(IV)中,A(L)表示傅立葉級數。A S(L)表示與微晶尺寸相關之傅立葉級數。L表示傅立葉長度。 lnA(L)=lnA S(L)-(πL 2ρb 2/2)ln(R e/L)(K 2C)+O(K 2C) 2(IV) From the relationship of the above formula (III) and the Warren-Averbach formula, it can be expressed as the following formula (IV), and the dislocation density ρ and the crystallite size can be obtained as a modified Warren-Averbach method. In the following formula (IV), A(L) represents a Fourier series. A S (L) represents the Fourier series related to the crystallite size. L represents the Fourier length. lnA(L)=lnA S (L)-(πL 2 ρb 2 /2)ln(R e /L)(K 2 C)+O(K 2 C) 2 (IV)

修正Williamson-Hall法及修正Warren-Averbach法之詳情記載於“T. Ungar and A. Borbely,”The effect of dislocation contrast on x-ray line broadening: A new approach to line profile analysis”Appl. Phys. Lett., vol. 69, no. 21, p. 3173, 1996.”及“T. Ungar, S. Ott, P. Sanders, A. Borbely, J. Weertman,”Dislocations, grain size and planar faults in nanostructured copper determined by high resolution X-ray diffraction and a new procedure of peak profile analysis”Acta Mater., vol. 46, no. 10, pp. 3693-3699, 1998.”中。Details of the modified Williamson-Hall method and the modified Warren-Averbach method are described in "T. Ungar and A. Borbely," The effect of dislocation contrast on x-ray line broadening: A new approach to line profile analysis" Appl. Phys. Lett ., vol. 69, no. 21, p. 3173, 1996.” and “T. Ungar, S. Ott, P. Sanders, A. Borbely, J. Weertman,” Dislocations, grain size and planar faults in nanostructured copper determined by high resolution X-ray diffraction and a new procedure of peak profile analysis"Acta Mater., vol. 46, no. 10, pp. 3693-3699, 1998."

本發明人等確認到,只要是對同一試樣測定鑽石粒子之位錯密度,即便改變測定範圍之選擇部位來進行複數次計算,測定結果亦幾乎不存在差異。即,本發明人等認為即便任意設定測定視野,亦不會隨意變化。The inventors of the present invention have confirmed that, as long as the dislocation density of diamond particles is measured on the same sample, even if the selected part of the measurement range is changed and the calculation is performed multiple times, there is little difference in the measurement results. That is, the present inventors considered that even if the measurement field of view is arbitrarily set, it does not change arbitrarily.

<結合相> 於本實施形態中,上述鑽石燒結體較佳為,進而包含結合相,且 上述結合相含有: 選自由如下單質金屬、合金及金屬間化合物所組成之群中之至少1種,上述單質金屬、合金及金屬間化合物包含選自由週期表之第4族元素、第5族元素、第6族元素、鐵、鋁、矽、鈷及鎳所組成之群(以下,亦記載為「群A」)中之至少1種金屬元素;或 選自由如下化合物及來自上述化合物之固溶體所組成之群中之至少1種,上述化合物由選自由週期表之第4族元素、第5族元素、第6族元素、鐵、鋁、矽、鈷及鎳所組成之群(群A)中之至少1種金屬元素、以及選自由氮、碳、硼及氧所組成之群(以下,亦記載為「群B」)中之至少1種非金屬元素所構成。 換言之,上述結合相可設為下述(a)至(f)之任一形態。 <Combined Phase> In this embodiment, the above-mentioned diamond sintered body preferably further includes a bonding phase, and The above combination contains: At least one selected from the group consisting of the following elemental metals, alloys, and intermetallic compounds, wherein the elemental metals, alloys, and intermetallic compounds include elements selected from Group 4, Group 5, and Group 6 of the periodic table , at least one metal element in the group consisting of iron, aluminum, silicon, cobalt and nickel (hereinafter, also referred to as "group A"); or At least one selected from the group consisting of the following compounds and solid solutions from the above compounds, the above compounds are selected from the group 4 elements, group 5 elements, and group 6 elements of the periodic table, iron, aluminum, silicon , at least one metal element from the group consisting of cobalt and nickel (group A), and at least one metal element selected from the group consisting of nitrogen, carbon, boron and oxygen (hereinafter, also referred to as "group B") Made of non-metallic elements. In other words, the above-mentioned bonding phase can be set to any one of the following forms (a) to (f).

(a)上述結合相由選自由如下單質金屬、合金及金屬間化合物所組成之群中之至少1種所構成,上述單質金屬、合金及金屬間化合物包含選自群A中之至少1種金屬元素。(a) The above-mentioned bonded phase is composed of at least one selected from the group consisting of the following elemental metals, alloys and intermetallic compounds, and the above-mentioned elemental metals, alloys and intermetallic compounds include at least one metal selected from the group A. element.

(b)上述結合相含有選自由如下單質金屬、合金及金屬間化合物所組成之群中之至少1種,上述單質金屬、合金及金屬間化合物包含選自群A中之至少1種金屬元素。(b) The bonded phase contains at least one metal element selected from the group consisting of the following elemental metals, alloys and intermetallic compounds, wherein the elemental metals, alloys and intermetallic compounds contain at least one metal element selected from the group A.

(c)上述結合相由選自由如下化合物及來自上述化合物之固溶體所組成之群中之至少1種所構成,上述化合物由選自群A中之至少1種金屬元素、及選自群B中之至少1種非金屬元素所構成。(c) The above-mentioned combined phase is composed of at least one selected from the group consisting of the following compounds and solid solutions derived from the above-mentioned compounds, wherein the above-mentioned compound is selected from the group A. It consists of at least one non-metal element in B.

(d)上述結合相含有選自由如下化合物及來自上述化合物之固溶體所組成之群中之至少1種,上述化合物由選自群A中之至少1種金屬元素、及選自群B中之至少1種非金屬元素所構成。(d) The above-mentioned combined phase contains at least one selected from the group consisting of the following compounds and solid solutions derived from the above-mentioned compounds. of at least one non-metallic element.

(e)上述結合相由選自由如下單質金屬、合金及金屬間化合物所組成之群中之至少1種、以及選自由如下化合物及來自上述化合物之固溶體所組成之群中之至少1種所構成,上述單質金屬、合金及金屬間化合物包含選自群A中之至少1種金屬元素,上述化合物由選自群A中之至少1種金屬元素、及選自群B中之至少1種非金屬元素所構成。(e) The above-mentioned bonded phase is at least one selected from the group consisting of the following elemental metals, alloys, and intermetallic compounds, and at least one selected from the group consisting of the following compounds and solid solutions derived from the above-mentioned compounds. The above-mentioned elemental metals, alloys and intermetallic compounds contain at least one metal element selected from the group A, and the above-mentioned compound is composed of at least one metal element selected from the group A and at least one selected from the group B. Made of non-metallic elements.

(f)上述結合相含有選自由如下單質金屬、合金及金屬間化合物所組成之群中之至少1種、以及選自由如下化合物及來自上述化合物之固溶體所組成之群中之至少1種,上述單質金屬、合金及金屬間化合物包含選自群A中之至少1種金屬元素,上述化合物由選自群A中之至少1種金屬元素、及選自群B中之至少1種非金屬元素所構成。(f) The aforementioned combined phase contains at least one selected from the group consisting of the following elemental metals, alloys and intermetallic compounds, and at least one selected from the group consisting of the following compounds and solid solutions derived from the aforementioned compounds , the above-mentioned elemental metals, alloys and intermetallic compounds comprise at least one metal element selected from group A, and the above-mentioned compound is selected from at least one metal element selected from group A and at least one kind of non-metal selected from group B composed of elements.

週期表之第4族元素例如包括鈦(Ti)、鋯(Zr)及鉿(Hf)。第5族元素例如包括釩(V)、鈮(Nb)及鉭(Ta)。第6族元素例如包括鉻(Cr)、鉬(Mo)及鎢(W)。Group 4 elements of the periodic table include, for example, titanium (Ti), zirconium (Zr), and hafnium (Hf). Group 5 elements include, for example, vanadium (V), niobium (Nb), and tantalum (Ta). Group 6 elements include, for example, chromium (Cr), molybdenum (Mo), and tungsten (W).

於本實施形態之一態樣中,上述結合相較佳為含有選自由鈷、鈦、鐵、鎢及硼所組成之群中之至少1種,更佳為含有鈷。In one aspect of the present embodiment, the bonding phase preferably contains at least one selected from the group consisting of cobalt, titanium, iron, tungsten and boron, and more preferably contains cobalt.

鑽石燒結體中所含有之結合相之組成可藉由上述SEM所附帶之EDX來特定出。The composition of the bonding phase contained in the diamond sintered body can be specified by the EDX attached to the above-mentioned SEM.

(結合相之含有率) 上述結合相之含有率相對於上述鑽石燒結體而言,較佳為1體積%以上20體積%以下,更佳為10體積%以上20體積%以下。結合相之含有率(體積%)可藉由如下方式來確認,即,使用上述SEM所附帶之EDX,對鑽石燒結體實施組織觀察、元素分析等。 (content rate of combined phase) The content of the binder phase is preferably 1% by volume or more and 20% by volume or less, more preferably 10% by volume or more and 20% by volume or less, relative to the above-mentioned diamond sintered body. The content rate (volume %) of the binder phase can be confirmed by performing microstructure observation, elemental analysis, etc. on the diamond sintered body using EDX attached to the above-mentioned SEM.

≪工具≫ 本實施形態之鑽石燒結體由於耐龜裂擴展性優異,因此適宜用於切削工具、耐磨工具、研削工具、摩擦攪拌接合用工具等。即,本實施形態之工具具備上述鑽石燒結體。上述工具具有對各種材料加工時優異之耐破損性及優異之耐衝擊性。於上述工具為切削工具之情形時,上述切削工具尤其適於鋁合金(例如,ADC12、AC4B)等之銑削加工及車削加工。 ≪Tools≫ Since the diamond sintered body of the present embodiment is excellent in crack propagation resistance, it is suitably used for cutting tools, wear-resistant tools, grinding tools, tools for friction stir welding, and the like. That is, the tool of the present embodiment includes the above-mentioned diamond sintered body. The above-mentioned tool has excellent damage resistance and excellent impact resistance when machining various materials. When the above-mentioned tool is a cutting tool, the above-mentioned cutting tool is particularly suitable for milling and turning of aluminum alloys (eg, ADC12, AC4B) and the like.

上述工具可為其整體由鑽石燒結體所構成,亦可為僅其部分(例如於切削工具之情形時為刀尖部分)由鑽石燒結體所構成。The above-mentioned tool may be composed of a diamond sintered body as a whole, or may be composed of only a part (for example, a tip portion in the case of a cutting tool) of a diamond sintered body.

作為切削工具,可例舉:鑽頭、端銑刀、鑽頭用刀尖替換型刀片、端銑刀用刀尖替換型刀片、銑削加工用刀尖替換型刀片、車削加工用刀尖替換型刀片、金屬用鋸、齒輪切製工具、鉸刀、螺絲攻、切削刀具等。Examples of cutting tools include drills, end mills, replaceable nose inserts for drills, replaceable nose inserts for end mills, replaceable nose inserts for milling, replaceable nose inserts for turning, Metal saws, gear cutting tools, reamers, screw taps, cutting tools, etc.

作為耐磨工具,可例舉:模具、刻劃器、刻劃輪、修整器等。As a wear-resistant tool, a die, a scorer, a scorer wheel, a dresser, etc. are mentioned.

作為研削工具,可例舉研削磨石等。As a grinding tool, a grinding stone etc. are mentioned.

≪鑽石燒結體之製造方法≫ 本實施形態之鑽石燒結體之製造方法 具備如下步驟: 準備鑽石粒子之原料粉末與結合相之原料粉末; 將上述鑽石粒子之原料粉末與上述結合相之原料粉末混合,獲得混合粉末; 於4 GPa以上7 GPa以下之保持壓力、30℃以上600℃以下之保持溫度下,在50分鐘以上190分鐘以下之保持時間內對上述混合粉末進行加熱,使上述鑽石粒子產生位錯;及 於4 GPa以上8 GPa以下之燒結壓力、1400℃以上1900℃以下之燒結溫度下,在1分鐘以上60分鐘以下之燒結時間內對上述混合粉末進行燒結。 ≪Manufacturing method of diamond sintered body≫ Manufacturing method of diamond sintered body of this embodiment Has the following steps: Prepare the raw powder of diamond particles and the raw powder of the bonding phase; Mixing the raw material powder of the above-mentioned diamond particles and the above-mentioned raw material powder of the combined phase to obtain a mixed powder; Heating the mixed powder at a holding pressure of not less than 4 GPa but not more than 7 GPa and a holding temperature of not less than 30°C but not more than 600°C for a holding time of not less than 50 minutes but not more than 190 minutes to generate dislocations in the diamond particles; and The mixed powder is sintered at a sintering pressure of 4 GPa or more and 8 GPa or less and a sintering temperature of 1400° C. or more and 1900° C. or less for a sintering time of 1 minute or more and 60 minutes or less.

<準備鑽石粒子之原料粉末與結合相之原料粉末之步驟> 本步驟中,準備鑽石粒子之原料粉末(以下,亦記載為「鑽石粉末」)與結合相之原料粉末(以下,亦記載為「結合相原料粉末」)。鑽石粉末並無特別限定,可使用公知之鑽石粒子作為原料粉末。 <Steps for preparing raw powder of diamond particles and raw powder of bonding phase> In this step, raw material powder of diamond particles (hereinafter, also referred to as "diamond powder") and raw material powder of bonded phase (hereinafter, also referred to as "bonded phase raw material powder") are prepared. The diamond powder is not particularly limited, and known diamond particles can be used as the raw material powder.

鑽石粉末之平均粒徑並無特別限定,例如可設為0.1 μm以上50 μm以下。The average particle size of the diamond powder is not particularly limited, but can be, for example, 0.1 μm or more and 50 μm or less.

結合相原料粉末並無特別限定,只要為含有構成結合相之元素之粉末即可。作為結合相原料粉末,例如可例舉:鈷之粉末、鈦之粉末等。關於結合相原料粉末,根據目標之結合相之組成,可單獨使用1種粉末,亦可組合複數種粉末使用。The binder phase raw material powder is not particularly limited, as long as it is a powder containing elements constituting the binder phase. As a binder phase raw material powder, cobalt powder, titanium powder, etc. are mentioned, for example. Regarding the binder phase raw material powder, one type of powder may be used alone, or a plurality of types of powder may be used in combination according to the composition of the target binder phase.

<獲得混合粉末之步驟> 本步驟中,將上述鑽石粒子之原料粉末(鑽石粉末)與上述結合相之原料粉末(結合相原料粉末)混合,獲得混合粉末。此時,上述鑽石粉末與上述結合相原料粉末亦能夠以鑽石燒結體中之鑽石粒子之含有率處於上述之範圍內之方式,按任意調配比率進行混合。 <Procedure for obtaining mixed powder> In this step, the raw material powder of the diamond particles (diamond powder) is mixed with the raw material powder of the bonded phase (the raw material powder of the bonded phase) to obtain a mixed powder. At this time, the above-mentioned diamond powder and the above-mentioned bonded phase raw material powder can also be mixed at an arbitrary mixing ratio so that the content of diamond particles in the diamond sintered body falls within the above-mentioned range.

混合兩粉末之方法並無特別限定,可為使用磨碎機之混合方法,亦可為使用球磨機之混合方法。混合之方法可為濕式,亦可為乾式。The method of mixing the two powders is not particularly limited, and may be a mixing method using an attritor or a mixing method using a ball mill. The mixing method may be wet or dry.

<使鑽石粒子產生位錯之步驟> 本步驟中,於4 GPa以上7 GPa以下之保持壓力、30℃以上600℃以下之保持溫度下,在50分鐘以上190分鐘以下之保持時間內對上述混合粉末進行加熱,使上述鑽石粒子產生位錯。藉由在鑽石不會發生熔解及再析出之低溫下對鑽石粉末進行加壓,鑽石之結晶結構發生變化,產生位錯。 <Procedure for dislocation of diamond particles> In this step, the mixed powder is heated at a holding pressure of 4 GPa or more and 7 GPa or less and a holding temperature of 30°C or more and 600°C or less, and the above-mentioned mixed powder is heated for a holding time of 50 minutes or more and 190 minutes or less, so that the diamond particles are generated. wrong. By pressurizing the diamond powder at a low temperature where the diamond does not melt and re-precipitate, the crystal structure of the diamond changes and dislocations are generated.

於本實施形態中,自常溫(23±5℃)及大氣壓之狀態至上述保持壓力及保持溫度之狀態之路徑並無特別限定。In the present embodiment, the route from the state of normal temperature (23±5° C.) and atmospheric pressure to the state of the above-mentioned holding pressure and holding temperature is not particularly limited.

本實施形態之鑽石燒結體之製造方法中所使用之高壓高溫產生裝置只要為能夠獲得目標之壓力及溫度之條件之裝置即可,並無特別限制。就提高生產性及作業性之觀點而言,高壓高溫產生裝置較佳為帶型高壓高溫產生裝置。又,收納混合粉末之容器只要為耐高壓高溫性之材料即可,並無特別限制,例如適宜使用鉭(Ta)、鈮(Nb)等。The high-pressure and high-temperature generator used in the method for producing a diamond sintered body of the present embodiment is not particularly limited as long as it can obtain the desired pressure and temperature conditions. From the viewpoint of improving productivity and workability, the high-pressure and high-temperature generator is preferably a belt-type high-pressure and high-temperature generator. In addition, the container in which the mixed powder is accommodated is not particularly limited as long as it is a material resistant to high pressure and high temperature, and for example, tantalum (Ta), niobium (Nb), etc. are suitably used.

為了防止鑽石燒結體中混入雜質,例如首先將上述混合粉末放入至Ta、Nb等高熔點金屬製之囊袋中,於真空下進行加熱並進行密封,從而自混合粉末中去除吸附氣體及空氣。其後,較佳為進行上述使鑽石粒子產生位錯之步驟、以及下述將混合粉末燒結之步驟。於本實施形態之一態樣中,較佳為在上述使鑽石粒子產生位錯之步驟之後進行如下步驟,即,保持著該狀態繼而將混合粉末燒結,而不將上述混合粉末自上述高熔點金屬製之囊袋中取出。In order to prevent impurities from being mixed into the diamond sintered body, for example, the above mixed powder is first put into a bag made of high melting point metals such as Ta and Nb, heated and sealed under vacuum, so as to remove adsorbed gas and air from the mixed powder . After that, it is preferable to perform the above-mentioned step of dislocating the diamond particles and the following step of sintering the mixed powder. In one aspect of the present embodiment, it is preferable to perform the following step after the above-mentioned step of dislocating the diamond particles, that is, to maintain this state and then sinter the mixed powder without sintering the mixed powder from the above-mentioned high melting point. Take it out of a metal pouch.

上述保持壓力較佳為4 GPa以上7 GPa以下,更佳為4.5 GPa以上6 GPa以下。The above-mentioned holding pressure is preferably 4 GPa or more and 7 GPa or less, more preferably 4.5 GPa or more and 6 GPa or less.

上述保持溫度較佳為30℃以上600℃以下,更佳為50℃以上500℃以下。The above-mentioned holding temperature is preferably 30°C or higher and 600°C or lower, more preferably 50°C or higher and 500°C or lower.

上述保持時間較佳為50分鐘以上190分鐘以下,更佳為60分鐘以上180分鐘以下。The above-mentioned holding time is preferably 50 minutes or more and 190 minutes or less, and more preferably 60 minutes or more and 180 minutes or less.

<將混合粉末燒結之步驟> 本步驟中,於4 GPa以上8 GPa以下之燒結壓力、1400℃以上1700℃以下之燒結溫度下,在1分鐘以上60分鐘以下之燒結時間內對上述混合粉末進行燒結。藉此,獲得本發明之鑽石燒結體。 <The step of sintering the mixed powder> In this step, the mixed powder is sintered at a sintering pressure of 4 GPa to 8 GPa and a sintering temperature of 1400°C to 1700°C and a sintering time of 1 minute to 60 minutes. Thereby, the diamond sintered body of the present invention is obtained.

上述燒結壓力較佳為4 GPa以上8 GPa以下,更佳為4.5 GPa以上7 GPa以下。The sintering pressure is preferably 4 GPa or more and 8 GPa or less, more preferably 4.5 GPa or more and 7 GPa or less.

上述燒結溫度較佳為1400℃以上1700℃以下,更佳為1450℃以上1550℃以下。The sintering temperature is preferably 1400°C or higher and 1700°C or lower, more preferably 1450°C or higher and 1550°C or lower.

上述燒結時間較佳為1分鐘以上60分鐘以下,更佳為5分鐘以上20分鐘以下。 [實施例] The sintering time is preferably 1 minute or more and 60 minutes or less, and more preferably 5 minutes or more and 20 minutes or less. [Example]

藉由實施例,對本實施形態進一步具體地進行說明。但是,本實施形態並不受該等實施例限定。The present embodiment will be described in more detail by way of examples. However, the present embodiment is not limited to these Examples.

≪鑽石燒結體之製作≫ <準備鑽石粒子之原料粉末與結合相之原料粉末之步驟> 準備表1-1及表1-2所示之平均粒徑或組成之粉末作為原料粉末。 ≪Production of diamond sintered body≫ <Steps for preparing raw powder of diamond particles and raw powder of bonding phase> The powders having the average particle diameters or compositions shown in Tables 1-1 and 1-2 were prepared as raw material powders.

[表1-1] 試樣 鑽石粒子之原料粉末 結合相之原料粉末 平均粒徑(μm) 組成(質量比) 1 0.5 Co、Ti(75:25) 2 5.0 Co、Ti(75:25) 3 0.5 Co、Ti(75:25) 4 0.5 Co、Ti(75:25) 5 0.5 Co、Ti(75:25) 6 0.5 Co、Ti(75:25) 7 0.5 Co、Ti(75:25) 8 0.5 Co、Ti(75:25) 9 0.5 Co、Ti(75:25) 10 0.5 Co、Ti(75:25) 11 0.5 Co、Ti(75:25) 12 0.5 Co(100) 13 0.5 Co、Fe(99:1) 14 0.5 Co、B(99:1) 15 0.2 Co、Ti(75:25) 16 0.5 Co、Ti(75:25) 17 5.0 Co、Ti(75:25) 18 30.0 Co、Ti(75:25) 19 45.0 Co、Ti(75:25) 20 55.0 Co、Ti(75:25) [Table 1-1] sample Raw powder of diamond particles Raw material powder for combined phase Average particle size (μm) Composition (mass ratio) 1 0.5 Co, Ti (75:25) 2 5.0 Co, Ti (75:25) 3 0.5 Co, Ti (75:25) 4 0.5 Co, Ti (75:25) 5 0.5 Co, Ti (75:25) 6 0.5 Co, Ti (75:25) 7 0.5 Co, Ti (75:25) 8 0.5 Co, Ti (75:25) 9 0.5 Co, Ti (75:25) 10 0.5 Co, Ti (75:25) 11 0.5 Co, Ti (75:25) 12 0.5 Co(100) 13 0.5 Co, Fe (99:1) 14 0.5 Co, B (99:1) 15 0.2 Co, Ti (75:25) 16 0.5 Co, Ti (75:25) 17 5.0 Co, Ti (75:25) 18 30.0 Co, Ti (75:25) 19 45.0 Co, Ti (75:25) 20 55.0 Co, Ti (75:25)

[表1-2] 試樣 鑽石粒子之原料粉末 結合相之原料粉末 平均粒徑(μm) 組成(質量比) 21 30.0 Co、W(95:5) 22 40.0 Co、W(95:5) 23 30.0 Co、W(95:5) 24 30.0 Co、W(95:5) 25 30.0 Co、W(95:5) 26 30.0 Co、W(95:5) 27 30.0 Co、W(95:5) 28 30.0 Co、W(95:5) 29 30.0 Co、W(95:5) 30 30.0 Co、W(95:5) 31 30.0 Co、W(95:5) 32 30.0 Co(100) [Table 1-2] sample Raw powder of diamond particles Raw material powder for combined phase Average particle size (μm) Composition (mass ratio) twenty one 30.0 Co, W (95:5) twenty two 40.0 Co, W (95:5) twenty three 30.0 Co, W (95:5) twenty four 30.0 Co, W (95:5) 25 30.0 Co, W (95:5) 26 30.0 Co, W (95:5) 27 30.0 Co, W (95:5) 28 30.0 Co, W (95:5) 29 30.0 Co, W (95:5) 30 30.0 Co, W (95:5) 31 30.0 Co, W (95:5) 32 30.0 Co(100)

<獲得混合粉末之步驟> 以最終獲得之鑽石燒結體成為表3-1或表3-2中所記載之組成之方式,以各種調配比率添加所準備之各原料粉末,並使用球磨機以乾式之方式進行混合,從而製得混合粉末。此處,如下所述,上述混合粉末係以與WC-6%Co超硬合金製之圓盤接觸之狀態進行燒結。因此,當進行燒結時,鈷及鎢自該圓盤溶浸至鑽石燒結體中,認為鑽石燒結體中之鈷之含有率及鎢之含有率會上升。預先考慮到該鈷之含有率之上升量及鎢之含有率之上升量,再決定各原料粉末之調配比率。 <Procedure for obtaining mixed powder> In such a way that the finally obtained diamond sintered body has the composition described in Table 3-1 or Table 3-2, each of the prepared raw material powders was added at various mixing ratios, and mixed in a dry manner using a ball mill to obtain Mix powder. Here, as described below, the mixed powder is sintered in a state of being in contact with a disc made of WC-6%Co cemented carbide. Therefore, when sintering is performed, cobalt and tungsten are leached from the disk into the diamond sintered body, and it is thought that the cobalt content and the tungsten content in the diamond sintered body increase. The mixing ratio of each raw material powder is determined in consideration of the increase in the cobalt content and the increase in the tungsten content in advance.

<使鑽石粒子產生位錯之步驟> 繼而,將上述混合粉末以與WC-6%Co超硬合金製之圓盤接觸之狀態放入至Ta製之囊袋中,於真空下進行加熱並進行密閉。其後,使用高壓高溫產生裝置,以表2-1或表2-2所示之保持壓力、保持溫度及保持時間,對上述混合粉末進行加熱處理。 <Procedure for dislocation of diamond particles> Then, the mixed powder was put into a bag made of Ta in a state of being in contact with a disc made of WC-6%Co cemented carbide, heated under vacuum, and sealed. Then, using a high-pressure high-temperature generator, the above-mentioned mixed powder was heat-treated at the holding pressure, holding temperature and holding time shown in Table 2-1 or Table 2-2.

<將混合粉末燒結之步驟> 繼上述使鑽石粒子產生位錯之步驟之後,以表2-1或表2-2所示之燒結壓力、燒結溫度及燒結時間,對上述混合粉末進行燒結。經過以上步驟,製得試樣1~32之鑽石燒結體。 <The step of sintering the mixed powder> Following the above step of generating dislocations in the diamond particles, the mixed powder was sintered at the sintering pressure, sintering temperature and sintering time shown in Table 2-1 or Table 2-2. Through the above steps, diamond sintered bodies of samples 1 to 32 were obtained.

[表2-1] 試樣 產生位錯之步驟 燒結之步驟 保持壓力 (GPa) 保持溫度 (℃) 保持時間 (min) 燒結壓力 (GPa) 燒結溫度 (℃) 燒結時間 (min) 1 5 100 200 7 1500 15 2 5 100 220 7 1500 15 3 5 100 180 7 1500 15 4 5 100 160 7 1500 15 5 5 100 140 7 1500 15 6 5 100 120 7 1500 15 7 5 100 100 7 1500 15 8 5 100 80 7 1500 15 9 5 100 60 7 1500 15 10 5 100 120 7 1500 15 11 5 100 120 7 1500 15 12 5 100 120 7 1500 15 13 5 100 120 7 1500 15 14 5 100 120 7 1500 15 15 5 100 120 7 1500 15 16 5 100 120 7 1500 15 17 5 100 120 7 1500 15 18 5 100 120 7 1500 15 19 5 100 120 7 1500 15 20 5 100 120 7 1500 15 [table 2-1] sample Steps to generate dislocations Sintering steps Holding pressure (GPa) Holding temperature (℃) Hold time (min) Sintering pressure (GPa) Sintering temperature (℃) Sintering time (min) 1 5 100 200 7 1500 15 2 5 100 220 7 1500 15 3 5 100 180 7 1500 15 4 5 100 160 7 1500 15 5 5 100 140 7 1500 15 6 5 100 120 7 1500 15 7 5 100 100 7 1500 15 8 5 100 80 7 1500 15 9 5 100 60 7 1500 15 10 5 100 120 7 1500 15 11 5 100 120 7 1500 15 12 5 100 120 7 1500 15 13 5 100 120 7 1500 15 14 5 100 120 7 1500 15 15 5 100 120 7 1500 15 16 5 100 120 7 1500 15 17 5 100 120 7 1500 15 18 5 100 120 7 1500 15 19 5 100 120 7 1500 15 20 5 100 120 7 1500 15

[表2-2] 試樣 產生位錯之步驟 燒結之步驟 保持壓力 (GPa) 保持溫度 (℃) 保持時間 (min) 燒結壓力 (GPa) 燒結溫度 (℃) 燒結時間 (min) 21 5 100 200 7 1500 15 22 5 100 210 7 1500 15 23 5 100 180 7 1500 15 24 5 100 160 7 1500 15 25 5 100 140 7 1500 15 26 5 100 120 7 1500 15 27 5 100 100 7 1500 15 28 5 100 80 7 1500 15 29 5 100 60 7 1500 15 30 5 100 120 7 1500 15 31 5 100 120 7 1500 15 32 5 100 120 7 1500 15 [Table 2-2] sample Steps to generate dislocations Sintering steps Holding pressure (GPa) Holding temperature (℃) Hold time (min) Sintering pressure (GPa) Sintering temperature (℃) Sintering time (min) twenty one 5 100 200 7 1500 15 twenty two 5 100 210 7 1500 15 twenty three 5 100 180 7 1500 15 twenty four 5 100 160 7 1500 15 25 5 100 140 7 1500 15 26 5 100 120 7 1500 15 27 5 100 100 7 1500 15 28 5 100 80 7 1500 15 29 5 100 60 7 1500 15 30 5 100 120 7 1500 15 31 5 100 120 7 1500 15 32 5 100 120 7 1500 15

≪鑽石燒結體之特性評價≫ <鑽石燒結體之組成> 測定鑽石燒結體中之鑽石粒子與結合相之含有率(體積比)。具體之測定方法由於與上述[本發明之實施形態之詳情]欄中所記載之方法相同,因此不重複進行說明。確認到,各試樣中鑽石燒結體中之鑽石粒子之含有率如表3-1及表3-2(參照「含有率」欄)所示。 ≪Characteristic evaluation of diamond sintered body≫ <Composition of diamond sintered body> The content ratio (volume ratio) of the diamond particles and the bonded phase in the diamond sintered body was measured. The specific measurement method is the same as the method described in the above-mentioned [Details of Embodiments of the Present Invention], so the description will not be repeated. It was confirmed that the content of diamond particles in the diamond sintered body in each sample is as shown in Table 3-1 and Table 3-2 (refer to the column of "content ratio").

<鑽石粒子之平均粒徑> 測定鑽石燒結體中之鑽石粒子之平均粒徑。具體之測定方法由於與上述[本發明之實施形態之詳情]欄中所記載之方法相同,因此不重複進行說明。將結果示於表3-1及表3-2(參照「平均粒徑」欄)中。 <Average particle size of diamond particles> The average particle size of the diamond particles in the diamond sintered body was measured. The specific measurement method is the same as the method described in the above-mentioned [Details of Embodiments of the Present Invention], so the description will not be repeated. The results are shown in Table 3-1 and Table 3-2 (refer to the column of "average particle size").

<結合相之組成> 利用SEM-EDX來特定出鑽石燒結體中之結合相之組成。具體之測定方法由於與上述[本發明之實施形態之詳情]欄中所記載之方法相同,因此不重複進行說明。將結果示於表3-1及表3-2(參照「結合相之組成」欄)中。 <Composition of combined phase> The composition of the bond phase in the diamond sintered body was specified by SEM-EDX. The specific measurement method is the same as the method described in the above-mentioned [Details of Embodiments of the Present Invention], so the description will not be repeated. The results are shown in Table 3-1 and Table 3-2 (refer to the column of "composition of binding phase").

<鑽石粒子之位錯密度> 測定鑽石燒結體中之鑽石粒子之位錯密度。具體之測定方法由於與上述[本發明之實施形態之詳情]欄中所記載之方法相同,因此不重複進行說明。將結果示於表3-1及表3-2(參照「位錯密度」欄)中。 <Dislocation Density of Diamond Particles> The dislocation density of the diamond particles in the diamond sintered body was determined. The specific measurement method is the same as the method described in the above-mentioned [Details of Embodiments of the Present Invention], so the description will not be repeated. The results are shown in Table 3-1 and Table 3-2 (refer to the column of "dislocation density").

≪具備鑽石燒結體之工具之評價≫ <切削試驗1:銑削加工試驗> 分別使用以上述方式製得之試樣1~14之鑽石燒結體來製作切削工具(切割器為RF4080R、刀片為SNEW1204ADFR且刀片替換型切割器中之刀片之刀尖部分具備上述鑽石燒結體之工具),並實施銑削加工試驗。銑削加工試驗之切削條件如下所示。上述銑削加工試驗係切削體積(cm 3)越大,則越能夠評價為耐破損性、耐衝擊性優異之切削工具。又,於此情形時,切削工具中所使用之鑽石燒結體可評價為耐龜裂擴展性優異。將結果示於表3-1中。切削試驗1中,試樣3~10及試樣12~14相當於實施例。試樣1、試樣2及試樣11相當於比較例。 ≪Evaluation of tools with diamond sintered body≫ <Cutting test 1: Milling test> Cutting tools (cutters: RF4080R, inserts: SNEW1204ADFR and The cutting edge part of the blade in the blade replacement type cutter was provided with the above-mentioned diamond sintered body tool), and a milling test was carried out. The cutting conditions of the milling test are as follows. In the above-mentioned milling processing test, the larger the cutting volume (cm 3 ), the more it can be evaluated as a cutting tool having excellent damage resistance and impact resistance. In addition, in this case, the diamond sintered body used for the cutting tool can be evaluated to be excellent in crack propagation resistance. The results are shown in Table 3-1. In the cutting test 1, the samples 3 to 10 and the samples 12 to 14 correspond to the examples. Sample 1, Sample 2, and Sample 11 correspond to comparative examples.

(銑削加工試驗之切削條件) 被切削材:ADC12(60 mm×290 mm×60 mm) 切削速度:3000 m/分鐘 進給量:0.2 mm/t 切口:0.4 mm 冷卻劑:wet 評價方法:對被切削材之290 mm×60 mm面進行銑削加工,測定切削工具之平均刀腹面磨耗寬度達到250 μm為止之切削體積(cm 3) (Cutting conditions for milling test) Work material: ADC12 (60 mm×290 mm×60 mm) Cutting speed: 3000 m/min Feed rate: 0.2 mm/t Notch: 0.4 mm Coolant: wet Evaluation method: Yes The 290 mm×60 mm surface of the workpiece is milled, and the cutting volume (cm 3 ) until the average wear width of the flank surface of the cutting tool reaches 250 μm is determined.

<切削試驗2:車削加工試驗> 分別使用以上述方式製得之試樣15~20之鑽石燒結體來製作切削工具(保持件為CSRP R3225-N12、刀片為SPGN120308且刀片之刀尖部分具備上述鑽石燒結體之工具),並實施車削加工試驗。車削加工試驗之切削條件如下所示。上述車削加工試驗係切削距離(km)越長,則越能夠評價為耐破損性、耐磨性優異之切削工具。又,於此情形時,切削工具中所使用之鑽石燒結體可評價為耐龜裂擴展性優異。將結果示於表3-1中。切削試驗2中,試樣15~19相當於實施例。試樣20相當於比較例。 <Cutting test 2: Turning test> The diamond sintered bodies of samples 15 to 20 obtained in the above-mentioned manner were used to manufacture cutting tools (the holder was CSRP R3225-N12, the insert was SPGN120308, and the cutting edge of the insert had the above-mentioned diamond sintered body), and the cutting tools were carried out. Turning test. The cutting conditions of the turning test are as follows. In the above-mentioned turning work test, the longer the cutting distance (km) is, the more it can be evaluated as a cutting tool having excellent fracture resistance and wear resistance. In addition, in this case, the diamond sintered body used for the cutting tool can be evaluated to be excellent in crack propagation resistance. The results are shown in Table 3-1. In the cutting test 2, samples 15 to 19 correspond to the examples. Sample 20 corresponds to the comparative example.

(車削加工試驗之切削條件) 被切削材:Ti-6Al-4V(ϕ120 mm×280 mm) 切削速度:270 m/分鐘 進給量:0.12 mm/rev 切口:0.35 mm 冷卻劑:wet 評價方法:對被切削材之外徑進行車削加工,測定切削工具之平均刀腹面磨耗寬度達到200 μm為止之切削距離(km) (Cutting conditions for turning test) Work material: Ti-6Al-4V (ϕ120 mm×280 mm) Cutting speed: 270 m/min Feed: 0.12 mm/rev Cutout: 0.35 mm Coolant: wet Evaluation method: Turn the outer diameter of the workpiece, and measure the cutting distance (km) until the average wear width of the flank surface of the cutting tool reaches 200 μm.

[表3-1] 試樣 鑽石燒結體 性能評價 鑽石粒子 結合相之組成 (質量比) 位錯密度 (×10 16m -2) 評價 方法 切削體積(cm 3)或切削距離(km) 平均粒徑 (μm) 含有率 (體積%) 1 0.5 90.0 Co、Ti、W(84:14:2) 1.1 切削試驗1 初始缺損 2 5.0 90.0 Co、Ti、W(84:14:2) 1.15 初始缺損 3 0.5 90.0 Co、Ti、W(83:15:2) 1.3 3800 4 0.5 90.0 Co、Ti、W(83:15:2) 1.4 4200 5 0.5 90.0 Co、Ti、W(83:15:2) 1.6 5800 6 0.5 90.0 Co、Ti、W(83:15:2) 6.0 7000 7 0.5 90.0 Co、Ti、W(83:15:2) 9.9 6000 8 0.5 90.0 Co、Ti、W(82:16:2) 10.3 4400 9 0.5 90.0 Co、Ti、W(80:18:2) 13.1 3900 10 0.5 81.0 Co、Ti、W(82:16:2) 6.0 3800 11 0.5 79.0 Co、Ti、W(82:16:2) 6.0 初始缺損 12 0.5 90.0 Co、W(98:2) 6.0 4000 13 0.5 90.0 Co、Fe、W(97:1:2) 6.0 7100 14 0.5 90.0 Co、B、W(97:1:2) 6.0 7000 15 0.2 90.0 Co、Ti、W(83:15:2) 6.0 切削試驗2 3.6 16 0.5 90.0 Co、Ti、W(83:15:2) 6.0 4.1 17 5.0 90.0 Co、Ti、W(83:15:2) 6.0 4.3 18 30.0 90.0 Co、Ti、W(84:14:2) 6.0 4.7 19 45.0 90.0 Co、Ti、W(84:14:2) 6.0 5.1 20 55.0 90.0 Co、Ti、W(84:14:2) 6.0 初始缺損 [Table 3-1] sample diamond sintered body Performance evaluation diamond particles The composition of the combined phase (mass ratio) Dislocation density (×10 16 m -2 ) Evaluation method Cutting volume (cm 3 ) or cutting distance (km) Average particle size (μm) Content rate (vol%) 1 0.5 90.0 Co, Ti, W (84:14:2) 1.1 Cutting test 1 initial defect 2 5.0 90.0 Co, Ti, W (84:14:2) 1.15 initial defect 3 0.5 90.0 Co, Ti, W (83:15:2) 1.3 3800 4 0.5 90.0 Co, Ti, W (83:15:2) 1.4 4200 5 0.5 90.0 Co, Ti, W (83:15:2) 1.6 5800 6 0.5 90.0 Co, Ti, W (83:15:2) 6.0 7000 7 0.5 90.0 Co, Ti, W (83:15:2) 9.9 6000 8 0.5 90.0 Co, Ti, W (82:16:2) 10.3 4400 9 0.5 90.0 Co, Ti, W (80:18:2) 13.1 3900 10 0.5 81.0 Co, Ti, W (82:16:2) 6.0 3800 11 0.5 79.0 Co, Ti, W (82:16:2) 6.0 initial defect 12 0.5 90.0 Co.W(98:2) 6.0 4000 13 0.5 90.0 Co, Fe, W (97:1:2) 6.0 7100 14 0.5 90.0 Co, B, W (97:1:2) 6.0 7000 15 0.2 90.0 Co, Ti, W (83:15:2) 6.0 Cutting test 2 3.6 16 0.5 90.0 Co, Ti, W (83:15:2) 6.0 4.1 17 5.0 90.0 Co, Ti, W (83:15:2) 6.0 4.3 18 30.0 90.0 Co, Ti, W (84:14:2) 6.0 4.7 19 45.0 90.0 Co, Ti, W (84:14:2) 6.0 5.1 20 55.0 90.0 Co, Ti, W (84:14:2) 6.0 initial defect

<結果> 根據切削試驗1之結果,試樣3~10及試樣12~14之切削工具(實施例之切削工具)獲得切削體積為3800 cm 3以上之良好結果。另一方面,試樣1、試樣2及試樣11之切削工具(比較例之切削工具)於切削加工之初始階段便產生缺損,無法求出切削體積。根據以上結果可知,實施例之切削工具相較於比較例之切削工具而言,耐破損性、耐衝擊性更加優異。又,可知實施例之鑽石燒結體相較於比較例之鑽石燒結體而言,耐龜裂擴展性更加優異。 <Results> According to the results of the cutting test 1, the cutting tools of Samples 3 to 10 and Samples 12 to 14 (cutting tools of Examples) obtained good results that the cutting volume was 3800 cm 3 or more. On the other hand, the cutting tools of Sample 1, Sample 2, and Sample 11 (the cutting tools of the comparative example) were chipped at the initial stage of cutting, and the cutting volume could not be obtained. From the above results, it can be seen that the cutting tools of Examples are more excellent in damage resistance and impact resistance than the cutting tools of Comparative Examples. Moreover, it turns out that the diamond sintered compact of an Example is more excellent in crack growth resistance than the diamond sintered compact of a comparative example.

根據切削試驗2之結果,試樣15~19之切削工具(實施例之切削工具)獲得切削距離為3.6 km以上之良好結果。另一方面,試樣20之切削工具(比較例之切削工具)於切削加工之初始階段便產生缺損,無法求出切削距離。根據以上結果可知,實施例之切削工具相較於比較例之切削工具而言,耐破損性更加優異。又,可知實施例之鑽石燒結體相較於比較例之鑽石燒結體而言,耐龜裂擴展性更加優異。According to the results of the cutting test 2, the cutting tools of samples 15 to 19 (the cutting tools of the examples) obtained good results that the cutting distance was 3.6 km or more. On the other hand, the cutting tool of the sample 20 (the cutting tool of the comparative example) was chipped in the initial stage of the cutting process, and the cutting distance could not be obtained. From the above results, it can be seen that the cutting tools of Examples are more excellent in breakage resistance than the cutting tools of Comparative Examples. Moreover, it turns out that the diamond sintered compact of an Example is more excellent in crack growth resistance than the diamond sintered compact of a comparative example.

<切削試驗3:銑削加工試驗> 分別使用以上述方式製得之試樣21~32之鑽石燒結體來製作切削工具(切割器為RF4080R、刀片為SNEW1204ADFR且刀片替換型切割器中之刀片之刀尖部分具備上述鑽石燒結體之工具),並實施銑削加工試驗。銑削加工試驗之切削條件如下所示。上述銑削加工試驗係切削體積(cm 3)越大,則越能夠評價為耐破損性、耐衝擊性優異之切削工具。又,於此情形時,切削工具中所使用之鑽石燒結體可評價為耐龜裂擴展性優異。將結果示於表3-2中。切削試驗3中,試樣23~30及試樣32相當於實施例。試樣21、試樣22及試樣31相當於比較例。 <Cutting Test 3: Milling Test> Using the diamond sintered bodies of Samples 21 to 32 obtained in the above-described manner, cutting tools (the cutter: RF4080R, the blade: SNEW1204ADFR, and the blade of the blade replacement type cutter) were used. The tip portion was provided with the tool of the above-mentioned diamond sintered body), and a milling test was carried out. The cutting conditions of the milling test are as follows. In the above-mentioned milling processing test, the larger the cutting volume (cm 3 ), the more it can be evaluated as a cutting tool having excellent damage resistance and impact resistance. In addition, in this case, the diamond sintered body used for the cutting tool can be evaluated to be excellent in crack propagation resistance. The results are shown in Table 3-2. In the cutting test 3, the samples 23 to 30 and the sample 32 correspond to the examples. Sample 21, Sample 22, and Sample 31 correspond to comparative examples.

(銑削加工試驗之切削條件) 被切削材:AC4B(60 mm×290 mm×60 mm) 切削速度:3300 m/分鐘 進給量:0.1 mm/t 切口:0.3 mm 冷卻劑:wet 評價方法:對被切削材之290 mm×60 mm面進行銑削加工,測定切削工具之平均刀腹面磨耗寬度達到250 μm為止之切削體積(cm 3) (Cutting conditions for milling test) Work material: AC4B (60 mm x 290 mm x 60 mm) Cutting speed: 3300 m/min Feed rate: 0.1 mm/t Notch: 0.3 mm Coolant: wet Evaluation method: Yes The 290 mm×60 mm surface of the workpiece is milled, and the cutting volume (cm 3 ) until the average wear width of the flank surface of the cutting tool reaches 250 μm is determined.

[表3-2] 試樣 鑽石燒結體 性能評價 鑽石粒子 結合相之組成 (質量比) 位錯密度 (×10 16m -2) 評價方法 切削體積(cm 3) 平均粒徑 (μm) 含有率 (體積%) 21 30.0 95.0 Co、W(93:7) 1.1 切削試驗3 初始缺損 22 40.0 95.0 Co、W(93:7) 1.06 初始缺損 23 30.0 95.0 Co、W(93:7) 1.3 4700 24 30.0 95.0 Co、W(93:7) 1.4 5300 25 30.0 95.0 Co、W(93:7) 1.7 6900 26 30.0 95.0 Co、W(93:7) 4.9 8000 27 30.0 95.0 Co、W(93:7) 9.8 7000 28 30.0 95.0 Co、W(93:7) 10.1 5400 29 30.0 95.0 Co、W(94:6) 13.3 5000 30 30.0 98.0 Co、W(95:5) 4.9 4800 31 30.0 99.2 Co、W(95:5) 4.9 初始缺損 32 30.0 95.0 Co、W(98:2) 4.9 5000 [Table 3-2] sample diamond sintered body Performance evaluation diamond particles The composition of the combined phase (mass ratio) Dislocation density (×10 16 m -2 ) Evaluation method Cutting volume (cm 3 ) Average particle size (μm) Content rate (vol%) twenty one 30.0 95.0 Co.W(93:7) 1.1 Cutting test 3 initial defect twenty two 40.0 95.0 Co.W(93:7) 1.06 initial defect twenty three 30.0 95.0 Co.W(93:7) 1.3 4700 twenty four 30.0 95.0 Co.W(93:7) 1.4 5300 25 30.0 95.0 Co.W(93:7) 1.7 6900 26 30.0 95.0 Co.W(93:7) 4.9 8000 27 30.0 95.0 Co.W(93:7) 9.8 7000 28 30.0 95.0 Co.W(93:7) 10.1 5400 29 30.0 95.0 Co.W(94:6) 13.3 5000 30 30.0 98.0 Co, W (95:5) 4.9 4800 31 30.0 99.2 Co, W (95:5) 4.9 initial defect 32 30.0 95.0 Co.W(98:2) 4.9 5000

<結果> 根據切削試驗3之結果,試樣23~30及試樣32之切削工具(實施例之切削工具)獲得切削體積為4700 cm 3以上之良好結果。另一方面,試樣21、試樣22及試樣31之切削工具(比較例之切削工具)於切削加工之初始階段便產生缺損,無法求出切削體積。根據以上結果可知,實施例之切削工具相較於比較例之切削工具而言,耐破損性、耐衝擊性更加優異。又,可知實施例之鑽石燒結體相較於比較例之鑽石燒結體而言,耐龜裂擴展性更加優異。 <Results> According to the results of the cutting test 3, the cutting tools of samples 23 to 30 and sample 32 (the cutting tools of the examples) obtained good results that the cutting volume was 4700 cm 3 or more. On the other hand, the cutting tools of Sample 21, Sample 22, and Sample 31 (the cutting tools of the comparative example) were chipped at the initial stage of cutting, and the cutting volume could not be obtained. From the above results, it can be seen that the cutting tools of Examples are more excellent in damage resistance and impact resistance than the cutting tools of Comparative Examples. Moreover, it turns out that the diamond sintered compact of an Example is more excellent in crack growth resistance than the diamond sintered compact of a comparative example.

如上對本發明之實施形態及實施例進行了說明,起初亦預想了對上述各實施形態及實施例之構成進行適當組合或進行各種變化。The embodiments and examples of the present invention have been described above, but it is contemplated that appropriate combinations or various changes may be made to the configurations of the above-mentioned embodiments and examples.

應認為本次所揭示之實施形態及實施例於所有方面均為例示,而並非限制性者。本發明之範圍係由申請專利範圍表示而並非由上述說明表示,意欲涵蓋與申請專利範圍均等之含義及範圍內之所有變更。It should be construed that the embodiments and examples disclosed this time are illustrative in all respects and not restrictive. The scope of the present invention is indicated by the scope of the patent application rather than by the above description, and is intended to cover the meaning equivalent to the scope of the patent application and all changes within the scope.

Claims (5)

一種鑽石燒結體,其係包含鑽石粒子者,且 上述鑽石粒子之含有率相對於上述鑽石燒結體而言為80體積%以上99體積%以下, 上述鑽石粒子之平均粒徑為0.1 μm以上50 μm以下, 上述鑽石粒子之位錯密度為1.2×10 16m -2以上5.4×10 19m -2以下。 A diamond sintered body comprising diamond particles, and the content rate of the above-mentioned diamond particles is 80% by volume to 99% by volume relative to the above-mentioned diamond sintered body, and the average particle diameter of the above-mentioned diamond particles is 0.1 μm or more. 50 μm Hereinafter, the dislocation density of the above-mentioned diamond particles is 1.2×10 16 m -2 or more and 5.4×10 19 m -2 or less. 如請求項1之鑽石燒結體,其中上述鑽石粒子之位錯密度為1.5×10 16m -2以上1.0×10 17m -2以下。 The diamond sintered body according to claim 1, wherein the dislocation density of the diamond particles is 1.5×10 16 m -2 or more and 1.0×10 17 m -2 or less. 如請求項1之鑽石燒結體,其進而包含結合相,且 上述結合相含有: 選自由如下單質金屬、合金及金屬間化合物所組成之群中之至少1種,上述單質金屬、合金及金屬間化合物包含選自由週期表之第4族元素、第5族元素、第6族元素、鐵、鋁、矽、鈷及鎳所組成之群中之至少1種金屬元素;或 選自由如下化合物及來自上述化合物之固溶體所組成之群中之至少1種,上述化合物由選自由週期表之第4族元素、第5族元素、第6族元素、鐵、鋁、矽、鈷及鎳所組成之群中之至少1種金屬元素、以及選自由氮、碳、硼及氧所組成之群中之至少1種非金屬元素所構成。 The diamond sintered body of claim 1, which further comprises a bonded phase, and The above combination contains: At least one selected from the group consisting of the following elemental metals, alloys, and intermetallic compounds, wherein the elemental metals, alloys, and intermetallic compounds include elements selected from Group 4, Group 5, and Group 6 of the periodic table , at least one metal element from the group consisting of iron, aluminum, silicon, cobalt and nickel; or At least one selected from the group consisting of the following compounds and solid solutions from the above compounds, the above compounds are selected from the group 4 elements, group 5 elements, and group 6 elements of the periodic table, iron, aluminum, silicon , at least one metal element from the group consisting of cobalt and nickel, and at least one non-metal element selected from the group consisting of nitrogen, carbon, boron and oxygen. 如請求項3之鑽石燒結體,其中上述結合相含有鈷。The diamond sintered body according to claim 3, wherein the above-mentioned bonding phase contains cobalt. 一種工具,其具備如請求項1至4中任一項之鑽石燒結體。A tool provided with the diamond sintered body as claimed in any one of claims 1 to 4.
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CN117123143B (en) * 2023-07-14 2024-02-23 山东中科润晶新材料有限公司 Method for synthesizing special-shaped dodecahedron diamond

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