TW202222806A - Boron-containing compound, light-emitting material and light-emitting element using same - Google Patents
Boron-containing compound, light-emitting material and light-emitting element using same Download PDFInfo
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- TW202222806A TW202222806A TW110138878A TW110138878A TW202222806A TW 202222806 A TW202222806 A TW 202222806A TW 110138878 A TW110138878 A TW 110138878A TW 110138878 A TW110138878 A TW 110138878A TW 202222806 A TW202222806 A TW 202222806A
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- substituted
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- 150000001875 compounds Chemical class 0.000 title claims abstract description 43
- 239000000463 material Substances 0.000 title claims description 51
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 title description 11
- 229910052796 boron Inorganic materials 0.000 title description 11
- 125000003118 aryl group Chemical group 0.000 claims abstract description 26
- 125000000217 alkyl group Chemical group 0.000 claims abstract description 14
- 229910052717 sulfur Inorganic materials 0.000 claims abstract description 9
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 8
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims abstract description 6
- -1 Z is NR 8 Inorganic materials 0.000 claims description 56
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 9
- 125000004169 (C1-C6) alkyl group Chemical group 0.000 claims description 4
- 125000001624 naphthyl group Chemical group 0.000 claims description 4
- 125000003107 substituted aryl group Chemical group 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 65
- 238000000034 method Methods 0.000 description 22
- 239000010408 film Substances 0.000 description 20
- 238000002347 injection Methods 0.000 description 16
- 239000007924 injection Substances 0.000 description 16
- 230000000903 blocking effect Effects 0.000 description 14
- 125000001424 substituent group Chemical group 0.000 description 13
- 229910052751 metal Inorganic materials 0.000 description 12
- 239000002184 metal Substances 0.000 description 12
- 239000000758 substrate Substances 0.000 description 12
- 230000005525 hole transport Effects 0.000 description 11
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 8
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 125000000623 heterocyclic group Chemical group 0.000 description 7
- 239000000203 mixture Substances 0.000 description 7
- 239000012044 organic layer Substances 0.000 description 7
- 238000004528 spin coating Methods 0.000 description 7
- 239000010409 thin film Substances 0.000 description 7
- 238000007740 vapor deposition Methods 0.000 description 7
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 6
- CSNNHWWHGAXBCP-UHFFFAOYSA-L Magnesium sulfate Chemical compound [Mg+2].[O-][S+2]([O-])([O-])[O-] CSNNHWWHGAXBCP-UHFFFAOYSA-L 0.000 description 6
- 125000001246 bromo group Chemical group Br* 0.000 description 6
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 6
- 229920001940 conductive polymer Polymers 0.000 description 5
- 238000005401 electroluminescence Methods 0.000 description 5
- 239000002356 single layer Substances 0.000 description 5
- 229940042055 systemic antimycotics triazole derivative Drugs 0.000 description 5
- 125000004737 (C1-C6) haloalkoxy group Chemical group 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 239000002585 base Substances 0.000 description 4
- 150000001716 carbazoles Chemical class 0.000 description 4
- 125000004432 carbon atom Chemical group C* 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 125000004093 cyano group Chemical group *C#N 0.000 description 4
- 125000005843 halogen group Chemical group 0.000 description 4
- 229910052749 magnesium Inorganic materials 0.000 description 4
- 239000011777 magnesium Substances 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 125000004191 (C1-C6) alkoxy group Chemical group 0.000 description 3
- 125000000171 (C1-C6) haloalkyl group Chemical group 0.000 description 3
- 238000005160 1H NMR spectroscopy Methods 0.000 description 3
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 description 3
- ZOKIJILZFXPFTO-UHFFFAOYSA-N 4-methyl-n-[4-[1-[4-(4-methyl-n-(4-methylphenyl)anilino)phenyl]cyclohexyl]phenyl]-n-(4-methylphenyl)aniline Chemical compound C1=CC(C)=CC=C1N(C=1C=CC(=CC=1)C1(CCCCC1)C=1C=CC(=CC=1)N(C=1C=CC(C)=CC=1)C=1C=CC(C)=CC=1)C1=CC=C(C)C=C1 ZOKIJILZFXPFTO-UHFFFAOYSA-N 0.000 description 3
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 3
- 150000007980 azole derivatives Chemical class 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 239000012141 concentrate Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 239000010419 fine particle Substances 0.000 description 3
- 125000001153 fluoro group Chemical group F* 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 229940058961 hydroxyquinoline derivative for amoebiasis and other protozoal diseases Drugs 0.000 description 3
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 3
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 229910052744 lithium Inorganic materials 0.000 description 3
- 229910052943 magnesium sulfate Inorganic materials 0.000 description 3
- 235000019341 magnesium sulphate Nutrition 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 3
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 3
- 125000001280 n-hexyl group Chemical group C(CCCCC)* 0.000 description 3
- 125000000740 n-pentyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 3
- 125000004123 n-propyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])* 0.000 description 3
- 238000000746 purification Methods 0.000 description 3
- LISFMEBWQUVKPJ-UHFFFAOYSA-N quinolin-2-ol Chemical class C1=CC=C2NC(=O)C=CC2=C1 LISFMEBWQUVKPJ-UHFFFAOYSA-N 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 125000002914 sec-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 3
- 238000010898 silica gel chromatography Methods 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 238000003756 stirring Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229920003002 synthetic resin Polymers 0.000 description 3
- 239000000057 synthetic resin Substances 0.000 description 3
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 3
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 3
- OGGKVJMNFFSDEV-UHFFFAOYSA-N 3-methyl-n-[4-[4-(n-(3-methylphenyl)anilino)phenyl]phenyl]-n-phenylaniline Chemical compound CC1=CC=CC(N(C=2C=CC=CC=2)C=2C=CC(=CC=2)C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=C(C)C=CC=2)=C1 OGGKVJMNFFSDEV-UHFFFAOYSA-N 0.000 description 2
- AWXGSYPUMWKTBR-UHFFFAOYSA-N 4-carbazol-9-yl-n,n-bis(4-carbazol-9-ylphenyl)aniline Chemical compound C12=CC=CC=C2C2=CC=CC=C2N1C1=CC=C(N(C=2C=CC(=CC=2)N2C3=CC=CC=C3C3=CC=CC=C32)C=2C=CC(=CC=2)N2C3=CC=CC=C3C3=CC=CC=C32)C=C1 AWXGSYPUMWKTBR-UHFFFAOYSA-N 0.000 description 2
- 125000004070 6 membered heterocyclic group Chemical group 0.000 description 2
- UJOBWOGCFQCDNV-UHFFFAOYSA-N 9H-carbazole Chemical compound C1=CC=C2C3=CC=CC=C3NC2=C1 UJOBWOGCFQCDNV-UHFFFAOYSA-N 0.000 description 2
- DLFVBJFMPXGRIB-UHFFFAOYSA-N Acetamide Chemical group CC(N)=O DLFVBJFMPXGRIB-UHFFFAOYSA-N 0.000 description 2
- PAYRUJLWNCNPSJ-UHFFFAOYSA-N Aniline Chemical compound NC1=CC=CC=C1 PAYRUJLWNCNPSJ-UHFFFAOYSA-N 0.000 description 2
- ROFVEXUMMXZLPA-UHFFFAOYSA-N Bipyridyl Chemical group N1=CC=CC=C1C1=CC=CC=N1 ROFVEXUMMXZLPA-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 101000837344 Homo sapiens T-cell leukemia translocation-altered gene protein Proteins 0.000 description 2
- JGFZNNIVVJXRND-UHFFFAOYSA-N N,N-Diisopropylethylamine (DIPEA) Chemical compound CCN(C(C)C)C(C)C JGFZNNIVVJXRND-UHFFFAOYSA-N 0.000 description 2
- MZRVEZGGRBJDDB-UHFFFAOYSA-N N-Butyllithium Chemical compound [Li]CCCC MZRVEZGGRBJDDB-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- NQRYJNQNLNOLGT-UHFFFAOYSA-N Piperidine Chemical compound C1CCNCC1 NQRYJNQNLNOLGT-UHFFFAOYSA-N 0.000 description 2
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 2
- NRCMAYZCPIVABH-UHFFFAOYSA-N Quinacridone Chemical compound N1C2=CC=CC=C2C(=O)C2=C1C=C1C(=O)C3=CC=CC=C3NC1=C2 NRCMAYZCPIVABH-UHFFFAOYSA-N 0.000 description 2
- SMWDFEZZVXVKRB-UHFFFAOYSA-N Quinoline Chemical compound N1=CC=CC2=CC=CC=C21 SMWDFEZZVXVKRB-UHFFFAOYSA-N 0.000 description 2
- 102100028692 T-cell leukemia translocation-altered gene protein Human genes 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 description 2
- 125000003943 azolyl group Chemical group 0.000 description 2
- ILAHWRKJUDSMFH-UHFFFAOYSA-N boron tribromide Chemical compound BrB(Br)Br ILAHWRKJUDSMFH-UHFFFAOYSA-N 0.000 description 2
- 125000004106 butoxy group Chemical group [*]OC([H])([H])C([H])([H])C(C([H])([H])[H])([H])[H] 0.000 description 2
- XJHCXCQVJFPJIK-UHFFFAOYSA-M caesium fluoride Chemical compound [F-].[Cs+] XJHCXCQVJFPJIK-UHFFFAOYSA-M 0.000 description 2
- 125000003917 carbamoyl group Chemical group [H]N([H])C(*)=O 0.000 description 2
- 239000006229 carbon black Substances 0.000 description 2
- 125000001309 chloro group Chemical group Cl* 0.000 description 2
- 125000002603 chloroethyl group Chemical group [H]C([*])([H])C([H])([H])Cl 0.000 description 2
- 125000004218 chloromethyl group Chemical group [H]C([H])(Cl)* 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 125000005842 heteroatom Chemical group 0.000 description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 125000002346 iodo group Chemical group I* 0.000 description 2
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 125000001971 neopentyl group Chemical group [H]C([*])([H])C(C([H])([H])[H])(C([H])([H])[H])C([H])([H])[H] 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 description 2
- 150000005041 phenanthrolines Chemical class 0.000 description 2
- 238000005424 photoluminescence Methods 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229920001467 poly(styrenesulfonates) Polymers 0.000 description 2
- 125000003367 polycyclic group Chemical group 0.000 description 2
- 239000002861 polymer material Substances 0.000 description 2
- LPNYRYFBWFDTMA-UHFFFAOYSA-N potassium tert-butoxide Chemical compound [K+].CC(C)(C)[O-] LPNYRYFBWFDTMA-UHFFFAOYSA-N 0.000 description 2
- 125000004076 pyridyl group Chemical group 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 125000000876 trifluoromethoxy group Chemical group FC(F)(F)O* 0.000 description 2
- 125000002023 trifluoromethyl group Chemical group FC(F)(F)* 0.000 description 2
- 239000013638 trimer Substances 0.000 description 2
- ODHXBMXNKOYIBV-UHFFFAOYSA-N triphenylamine Chemical compound C1=CC=CC=C1N(C=1C=CC=CC=1)C1=CC=CC=C1 ODHXBMXNKOYIBV-UHFFFAOYSA-N 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- JWZZKOKVBUJMES-UHFFFAOYSA-N (+-)-Isoprenaline Chemical compound CC(C)NCC(O)C1=CC=C(O)C(O)=C1 JWZZKOKVBUJMES-UHFFFAOYSA-N 0.000 description 1
- 125000004454 (C1-C6) alkoxycarbonyl group Chemical group 0.000 description 1
- 125000006624 (C1-C6) alkoxycarbonylamino group Chemical group 0.000 description 1
- 125000004739 (C1-C6) alkylsulfonyl group Chemical group 0.000 description 1
- 125000006700 (C1-C6) alkylthio group Chemical group 0.000 description 1
- 125000004741 (C1-C6) haloalkylsulfonyl group Chemical group 0.000 description 1
- 125000005913 (C3-C6) cycloalkyl group Chemical group 0.000 description 1
- 125000006570 (C5-C6) heteroaryl group Chemical group 0.000 description 1
- NGQSLSMAEVWNPU-UHFFFAOYSA-N 1,2-bis(2-phenylethenyl)benzene Chemical class C=1C=CC=CC=1C=CC1=CC=CC=C1C=CC1=CC=CC=C1 NGQSLSMAEVWNPU-UHFFFAOYSA-N 0.000 description 1
- VERMWGQSKPXSPZ-BUHFOSPRSA-N 1-[(e)-2-phenylethenyl]anthracene Chemical class C=1C=CC2=CC3=CC=CC=C3C=C2C=1\C=C\C1=CC=CC=C1 VERMWGQSKPXSPZ-BUHFOSPRSA-N 0.000 description 1
- 125000004973 1-butenyl group Chemical group C(=CCC)* 0.000 description 1
- 125000004972 1-butynyl group Chemical group [H]C([H])([H])C([H])([H])C#C* 0.000 description 1
- 125000006021 1-methyl-2-propenyl group Chemical group 0.000 description 1
- 125000006017 1-propenyl group Chemical group 0.000 description 1
- 125000000530 1-propynyl group Chemical group [H]C([H])([H])C#C* 0.000 description 1
- AIAJGVRFXREWPK-UHFFFAOYSA-N 2,8-bis(diphenylphosphoryl)dibenzofuran Chemical compound C=1C=CC=CC=1P(C=1C=C2C3=CC(=CC=C3OC2=CC=1)P(=O)(C=1C=CC=CC=1)C=1C=CC=CC=1)(=O)C1=CC=CC=C1 AIAJGVRFXREWPK-UHFFFAOYSA-N 0.000 description 1
- STTGYIUESPWXOW-UHFFFAOYSA-N 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline Chemical compound C=12C=CC3=C(C=4C=CC=CC=4)C=C(C)N=C3C2=NC(C)=CC=1C1=CC=CC=C1 STTGYIUESPWXOW-UHFFFAOYSA-N 0.000 description 1
- RIKNNBBGYSDYAX-UHFFFAOYSA-N 2-[1-[2-(4-methyl-n-(4-methylphenyl)anilino)phenyl]cyclohexyl]-n,n-bis(4-methylphenyl)aniline Chemical compound C1=CC(C)=CC=C1N(C=1C(=CC=CC=1)C1(CCCCC1)C=1C(=CC=CC=1)N(C=1C=CC(C)=CC=1)C=1C=CC(C)=CC=1)C1=CC=C(C)C=C1 RIKNNBBGYSDYAX-UHFFFAOYSA-N 0.000 description 1
- HRZTZLCMURHWFY-UHFFFAOYSA-N 2-bromo-1,3-difluorobenzene Chemical compound FC1=CC=CC(F)=C1Br HRZTZLCMURHWFY-UHFFFAOYSA-N 0.000 description 1
- 125000004974 2-butenyl group Chemical group C(C=CC)* 0.000 description 1
- 125000000069 2-butynyl group Chemical group [H]C([H])([H])C#CC([H])([H])* 0.000 description 1
- 125000004493 2-methylbut-1-yl group Chemical group CC(C*)CC 0.000 description 1
- VQGHOUODWALEFC-UHFFFAOYSA-N 2-phenylpyridine Chemical compound C1=CC=CC=C1C1=CC=CC=N1 VQGHOUODWALEFC-UHFFFAOYSA-N 0.000 description 1
- 125000001494 2-propynyl group Chemical group [H]C#CC([H])([H])* 0.000 description 1
- OYFFSPILVQLRQA-UHFFFAOYSA-N 3,6-ditert-butyl-9h-carbazole Chemical compound C1=C(C(C)(C)C)C=C2C3=CC(C(C)(C)C)=CC=C3NC2=C1 OYFFSPILVQLRQA-UHFFFAOYSA-N 0.000 description 1
- GOLORTLGFDVFDW-UHFFFAOYSA-N 3-(1h-benzimidazol-2-yl)-7-(diethylamino)chromen-2-one Chemical compound C1=CC=C2NC(C3=CC4=CC=C(C=C4OC3=O)N(CC)CC)=NC2=C1 GOLORTLGFDVFDW-UHFFFAOYSA-N 0.000 description 1
- WCXKTQVEKDHQIY-UHFFFAOYSA-N 3-[3-[3-(3,5-dipyridin-3-ylphenyl)phenyl]-5-pyridin-3-ylphenyl]pyridine Chemical compound C1=CN=CC(C=2C=C(C=C(C=2)C=2C=NC=CC=2)C=2C=C(C=CC=2)C=2C=C(C=C(C=2)C=2C=NC=CC=2)C=2C=NC=CC=2)=C1 WCXKTQVEKDHQIY-UHFFFAOYSA-N 0.000 description 1
- 125000004975 3-butenyl group Chemical group C(CC=C)* 0.000 description 1
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- IICCLYANAQEHCI-UHFFFAOYSA-N 4,5,6,7-tetrachloro-3',6'-dihydroxy-2',4',5',7'-tetraiodospiro[2-benzofuran-3,9'-xanthene]-1-one Chemical class O1C(=O)C(C(=C(Cl)C(Cl)=C2Cl)Cl)=C2C21C1=CC(I)=C(O)C(I)=C1OC1=C(I)C(O)=C(I)C=C21 IICCLYANAQEHCI-UHFFFAOYSA-N 0.000 description 1
- 125000006163 5-membered heteroaryl group Chemical group 0.000 description 1
- 125000006164 6-membered heteroaryl group Chemical group 0.000 description 1
- MZYDBGLUVPLRKR-UHFFFAOYSA-N 9-(3-carbazol-9-ylphenyl)carbazole Chemical compound C12=CC=CC=C2C2=CC=CC=C2N1C1=CC(N2C3=CC=CC=C3C3=CC=CC=C32)=CC=C1 MZYDBGLUVPLRKR-UHFFFAOYSA-N 0.000 description 1
- FOUNKDBOYUMWNP-UHFFFAOYSA-N 9-[4-[2-(4-carbazol-9-ylphenyl)-2-adamantyl]phenyl]carbazole Chemical compound C12=CC=CC=C2C2=CC=CC=C2N1C(C=C1)=CC=C1C1(C=2C=CC(=CC=2)N2C3=CC=CC=C3C3=CC=CC=C32)C(C2)CC3CC1CC2C3 FOUNKDBOYUMWNP-UHFFFAOYSA-N 0.000 description 1
- VIJYEGDOKCKUOL-UHFFFAOYSA-N 9-phenylcarbazole Chemical group C1=CC=CC=C1N1C2=CC=CC=C2C2=CC=CC=C21 VIJYEGDOKCKUOL-UHFFFAOYSA-N 0.000 description 1
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- 125000003601 C2-C6 alkynyl group Chemical group 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical class [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
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Images
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F5/00—Compounds containing elements of Groups 3 or 13 of the Periodic Table
- C07F5/02—Boron compounds
- C07F5/027—Organoboranes and organoborohydrides
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F5/00—Compounds containing elements of Groups 3 or 13 of the Periodic Table
- C07F5/02—Boron compounds
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- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/06—Luminescent, e.g. electroluminescent, chemiluminescent materials containing organic luminescent materials
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
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- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/658—Organoboranes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
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- Electroluminescent Light Sources (AREA)
- Optics & Photonics (AREA)
- Luminescent Compositions (AREA)
Abstract
Description
本發明係關於一種含硼化合物、發光材料及使用其之發光元件。更詳細而言,本發明係關於一種發光特性優異之含硼化合物、發光材料及使用其之發光元件。The present invention relates to a boron-containing compound, a light-emitting material and a light-emitting element using the same. More specifically, the present invention relates to a boron-containing compound having excellent light-emitting properties, a light-emitting material, and a light-emitting device using the same.
作為發光材料,例如,專利文獻1提出了如下含硼化合物。As a light-emitting material, for example, Patent Document 1 proposes the following boron-containing compounds.
[先前技術文獻] [專利文獻] [Prior Art Literature] [Patent Literature]
[專利文獻1]US2020/0270278A1[Patent Document 1] US2020/0270278A1
[發明所欲解決之課題][The problem to be solved by the invention]
本發明之課題在於提供一種發光特性優異之新穎之含硼化合物、發光材料及使用其之發光元件。 [解決課題之技術手段] An object of the present invention is to provide a novel boron-containing compound, a light-emitting material, and a light-emitting device using the same, which are excellent in light-emitting properties. [Technical means to solve the problem]
為了解決上述課題而進行了潛心研究,結果完成包含以下形態之本發明。In order to solve the above-mentioned problems, as a result of intensive research, the present invention including the following aspects has been completed.
即,本發明係 [1]一種化合物,其由式(I)所表示。 That is, the present invention is [1] A compound represented by formula (I).
式(I)中, R 1、R 2、R 3、R 4、R 5及R 6分別獨立地為經取代或未經取代之烷基, m分別獨立地為0~4之任一整數, n分別獨立地為0~3之任一整數, Y為N-R 7、O或S, Z為N-R 8、O或S, R 7及R 8分別獨立地為氫原子、經取代或未經取代之烷基或者經取代或未經取代之芳基, 於R 7為經取代或未經取代之芳基時,該芳基可與A1環連結而形成縮合環,且 於R 8為經取代或未經取代之芳基時,該芳基可與A2環連結而形成縮合環。 In formula (I), R 1 , R 2 , R 3 , R 4 , R 5 and R 6 are each independently a substituted or unsubstituted alkyl group, and m is each independently any integer from 0 to 4, n is each independently any integer from 0 to 3, Y is NR 7 , O or S, Z is NR 8 , O or S, R 7 and R 8 are each independently a hydrogen atom, substituted or unsubstituted Alkyl group or substituted or unsubstituted aryl group, when R 7 is substituted or unsubstituted aryl group, the aryl group can be linked with A1 ring to form a condensed ring, and when R 8 is substituted or unsubstituted aryl group In the case of a substituted aryl group, the aryl group may be linked to the A2 ring to form a condensed ring.
[2]如[1]所記載之化合物,其由式(II)所表示。[2] The compound according to [1], which is represented by formula (II).
式(II)中, R 1、R 2、R 3、R 4、R 5、R 6、R 9及R 10分別獨立地為經取代或未經取代之烷基, m分別獨立地為0~4之任一整數,且 n分別獨立地為0~3之任一整數。 In formula (II), R 1 , R 2 , R 3 , R 4 , R 5 , R 6 , R 9 and R 10 are each independently a substituted or unsubstituted alkyl group, and m is each independently 0- Any integer of 4, and n is each independently any integer of 0 to 3.
[3]一種發光材料,其包含[1]或[2]所記載之化合物。[3] A light-emitting material comprising the compound according to [1] or [2].
[4]一種發光元件,其含有[3]所記載之發光材料。 [發明之效果] [4] A light-emitting element comprising the light-emitting material according to [3]. [Effect of invention]
本發明之含硼化合物作為發光材料有用。本發明之發光材料中有放射延遲螢光者。含有本發明之發光材料之發光元件可實現優異之發光效率。The boron-containing compound of the present invention is useful as a light-emitting material. Among the luminescent materials of the present invention, there are those that emit delayed fluorescence. The light-emitting element containing the light-emitting material of the present invention can achieve excellent light-emitting efficiency.
本發明之含硼化合物為式(I)所表示之化合物,較佳為式(II)所表示之化合物。The boron-containing compound of the present invention is a compound represented by formula (I), preferably a compound represented by formula (II).
式(I)中, R 1、R 2、R 3、R 4、R 5及R 6分別獨立地為經取代或未經取代之烷基, m分別獨立地為0~4之任一整數, n分別獨立地為0~3之任一整數, Y為N-R 7、O或S, Z為N-R 8、O或S, R 7及R 8分別獨立地為氫原子、經取代或未經取代之烷基或者經取代或未經取代之芳基, 於R 7為經取代或未經取代之芳基時,該芳基可與A1環連結而形成縮合環,且 於R 8為經取代或未經取代之芳基時,該芳基可與A2環連結而形成縮合環。 In formula (I), R 1 , R 2 , R 3 , R 4 , R 5 and R 6 are each independently a substituted or unsubstituted alkyl group, and m is each independently any integer from 0 to 4, n is each independently any integer from 0 to 3, Y is NR 7 , O or S, Z is NR 8 , O or S, R 7 and R 8 are each independently a hydrogen atom, substituted or unsubstituted Alkyl group or substituted or unsubstituted aryl group, when R 7 is substituted or unsubstituted aryl group, the aryl group can be linked with A1 ring to form a condensed ring, and when R 8 is substituted or unsubstituted aryl group In the case of a substituted aryl group, the aryl group may be linked to the A2 ring to form a condensed ring.
式(II)中, R 1、R 2、R 3、R 4、R 5、R 6、R 9及R 10分別獨立地為經取代或未經取代之烷基, m分別獨立地為0~4之任一整數,且 n分別獨立地為0~3之任一整數。 In formula (II), R 1 , R 2 , R 3 , R 4 , R 5 , R 6 , R 9 and R 10 are each independently a substituted or unsubstituted alkyl group, and m is each independently 0- Any integer of 4, and n is each independently any integer of 0 to 3.
於本發明中,「未經取代」之用語意指僅為成為母核之基。於無「經取代」之記載而僅以成為母核之基之名稱記載時,只要無特別說明,則意指「未經取代」。 另一方面,「經取代」之用語意指成為母核之基之任一氫原子被與母核相同或不同之結構之基(取代基)取代。因此,「取代基」為與成為母核之基鍵結之其他基。取代基可為1個,亦可為2個以上。2個以上之取代基可相同,亦可不同。 「C1~6」等用語表示成為母核之基之碳原子數為1~6個等。該碳原子數中不包含存在於取代基中之碳原子之數。例如,具有乙氧基作為取代基之丁基分類為C2烷氧基C4烷基。 In the present invention, the term "unsubstituted" means only a group that becomes a parent nucleus. When there is no description of "substituted" and only the name of the base that becomes the parent nucleus is described, unless otherwise specified, it means "unsubstituted". On the other hand, the term "substituted" means that any hydrogen atom that becomes a group of the parent nucleus is replaced by a group (substituent) of the same or different structure as that of the parent nucleus. Therefore, a "substituent group" is another group bonded to the group that becomes the parent nucleus. One substituent may be sufficient as it, or two or more may be sufficient. Two or more substituents may be the same or different. Terms such as "C1 to 6" indicate that the number of carbon atoms in the group serving as the parent nucleus is 1 to 6, or the like. The number of carbon atoms present in the substituent is not included in the number of carbon atoms. For example, a butyl group having an ethoxy group as a substituent is classified as a C2alkoxyC4alkyl group.
「取代基」只要於化學方面容許,且具有本發明之效果,則並無特別限制。以下例示可成為「取代基」之基。 甲基、乙基、正丙基、異丙基、正丁基、第二丁基、異丁基、第三丁基、正戊基、正己基等C1~6烷基; 乙烯基、1-丙烯基、2-丙烯基(烯丙基)、1-丁烯基、2-丁烯基、3-丁烯基、1-甲基-2-丙烯基、2-甲基-2-丙烯基等C2~6烯基; 乙炔基、1-丙炔基、2-丙炔基、1-丁炔基、2-丁炔基、3-丁炔基、1-甲基-2-丙炔基等C2~6炔基; The "substituent" is not particularly limited as long as it is chemically acceptable and has the effects of the present invention. Groups that can be "substituents" are exemplified below. Methyl, ethyl, n-propyl, isopropyl, n-butyl, sec-butyl, isobutyl, tert-butyl, n-pentyl, n-hexyl and other C1-6 alkyl groups; vinyl, 1-propenyl, 2-propenyl (allyl), 1-butenyl, 2-butenyl, 3-butenyl, 1-methyl-2-propenyl, 2-methyl -C2-6 alkenyl such as 2-propenyl; C2-6 alkynyl such as ethynyl, 1-propynyl, 2-propynyl, 1-butynyl, 2-butynyl, 3-butynyl, 1-methyl-2-propynyl;
環丙基、環丁基、環戊基、環己基等C3~6環烷基; 苯基、萘基; 3~6員之雜環基; C3-6 cycloalkyl groups such as cyclopropyl, cyclobutyl, cyclopentyl, and cyclohexyl; Phenyl, naphthyl; Heterocyclyl with 3 to 6 members;
甲氧基、乙氧基、正丙氧基、異丙氧基、正丁氧基、第二丁氧基、異丁氧基、第三丁氧基等C1~6烷氧基; 苯氧基、萘氧基等C6~10芳氧基; 噻唑氧基、吡啶氧基等5~6員之雜芳氧基; C1-6 alkoxy groups such as methoxy, ethoxy, n-propoxy, isopropoxy, n-butoxy, second butoxy, isobutoxy, third butoxy; C6-10 aryloxy groups such as phenoxy, naphthyloxy; 5-6 membered heteroaryloxy groups such as thiazolyloxy, pyridyloxy;
甲氧基羰基、乙氧基羰基、正丙氧基羰基、異丙氧基羰基、正丁氧基羰基、第三丁氧基羰基等C1~6烷氧基羰基;C1-6 alkoxycarbonyl groups such as methoxycarbonyl, ethoxycarbonyl, n-propoxycarbonyl, isopropoxycarbonyl, n-butoxycarbonyl, and tert-butoxycarbonyl;
氟基、氯基、溴基、碘基等鹵素基; 氯甲基、氯乙基、三氟甲基、1,2-二氯正丙基、1-氟正丁基、全氟正戊基等C1~6鹵烷基; 三氟甲氧基、2-氯正丙氧基、2,3-二氯丁氧基等C1~6鹵烷氧基; Halogen groups such as fluoro, chloro, bromo, iodo, etc.; C1-6 haloalkyl groups such as chloromethyl, chloroethyl, trifluoromethyl, 1,2-dichloro-n-propyl, 1-fluoro-n-butyl, perfluoro-n-pentyl, etc.; C1-6 haloalkoxy groups such as trifluoromethoxy, 2-chloro-n-propoxy, 2,3-dichlorobutoxy;
甲醯胺基; 乙醯胺基、丙醯胺基、丁醯胺基、異丙基羰基胺基等C1~6烷基羰基胺基; 甲氧基羰基胺基、乙氧基羰基胺基、正丙氧基羰基胺基、異丙氧基羰基胺基等C1~6烷氧基羰基胺基; 胺基羰基、二甲基胺基羰基、苯基胺基羰基、N-苯基-N-甲基胺基羰基等未經取代或具有取代基之胺基羰基; formamide group; C1-6 alkylcarbonylamino groups such as acetamide, propionamide, butylamide, isopropylcarbonylamino, etc.; C1-6 alkoxycarbonylamino groups such as methoxycarbonylamino, ethoxycarbonylamino, n-propoxycarbonylamino, isopropoxycarbonylamino, etc.; Unsubstituted or substituted aminocarbonyl such as aminocarbonyl, dimethylaminocarbonyl, phenylaminocarbonyl, N-phenyl-N-methylaminocarbonyl;
甲硫基、乙硫基、正丙硫基、異丙硫基、正丁硫基、異丁硫基、第二丁硫基、第三丁硫基等C1~6烷基硫基; 三氟甲硫基、2,2,2-三氟乙硫基等C1~6鹵烷基硫基; 甲基磺醯基、乙基磺醯基、第三丁基磺醯基等C1~6烷基磺醯基; 三氟甲基磺醯基、2,2,2-三氟乙基磺醯基等C1~6鹵烷基磺醯基; C1-6 alkylthio groups such as methylthio, ethylthio, n-propylthio, isopropylthio, n-butylthio, isobutylthio, second butylthio, and third butylthio; C1-6 haloalkylthio groups such as trifluoromethylthio, 2,2,2-trifluoroethylthio; Methylsulfonyl, ethylsulfonyl, tert-butylsulfonyl and other C1-6 alkylsulfonyl groups; C1-6 haloalkylsulfonyl such as trifluoromethylsulfonyl, 2,2,2-trifluoroethylsulfonyl;
氰基;硝基;cyano group; nitro group;
又,關於該等「取代基」,該取代基中之任一氫原子可被不同結構之基取代。作為該情形之取代基,可列舉:C1~6烷基、C1~6鹵烷基、C1~6烷氧基、C1~6鹵烷氧基、鹵素基、氰基、硝基等。In addition, regarding these "substituents", any hydrogen atom in the substituents may be substituted by groups of different structures. As a substituent in this case, a C1-6 alkyl group, a C1-6 haloalkyl group, a C1-6 alkoxy group, a C1-6 haloalkoxy group, a halogen group, a cyano group, a nitro group, etc. are mentioned.
又,上述「3~6員之雜環基」係指包含選自由氮原子、氧原子及硫原子所組成之群中之1~4個雜原子作為環之構成原子者。雜環基可為單環及多環之任一者。多環雜環基若至少一個環為雜環,則剩餘之環可為飽和脂環、不飽和脂環或芳香環之任一者。作為「3~6員之雜環基」,可列舉:3~6員之飽和雜環基、5~6員之雜芳基、5~6員之部分不飽和雜環基等。 作為3~6員之飽和雜環基,可列舉:吖𠰂基(aziridinyl)、環氧基、吡咯啶基、四氫呋喃基(tetrahydrofuranyl)、四氫噻唑基(thiazolidinyl)、哌啶基、哌基、啉基、二氧雜環戊基(dioxolanyl)、二氧雜環己基(dioxanyl)等。 作為5員之雜芳基,可列舉:吡咯基、呋喃基、噻吩基、咪唑基、吡唑基、唑基、異唑基、噻唑基、異噻唑基、三唑基、二唑基(oxadiazolyl)、噻二唑基(thiadiazolyl)、四唑基等。 作為6員之雜芳基,可列舉:吡啶基、吡基、嘧啶基、嗒基、三基等。 In addition, the above-mentioned "3- to 6-membered heterocyclic group" refers to one containing 1 to 4 heteroatoms selected from the group consisting of a nitrogen atom, an oxygen atom and a sulfur atom as a constituent atom of the ring. The heterocyclyl group can be any of monocyclic and polycyclic. In the polycyclic heterocyclic group, if at least one ring is a heterocyclic ring, the remaining rings may be any of saturated alicyclic, unsaturated or aromatic rings. Examples of the "3- to 6-membered heterocyclic group" include a 3- to 6-membered saturated heterocyclic group, a 5- to 6-membered heteroaryl group, and a 5- to 6-membered partially unsaturated heterocyclic group. Examples of saturated heterocyclic groups having 3 to 6 members include aziridinyl, epoxy, pyrrolidinyl, tetrahydrofuranyl, thiazolidinyl, piperidinyl, piperidine base, Linoyl, dioxolanyl, dioxanyl, etc. As the 5-membered heteroaryl group, pyrrolyl, furyl, thienyl, imidazolyl, pyrazolyl, azolyl, iso azolyl, thiazolyl, isothiazolyl, triazolyl, Oxadiazolyl, thiadiazolyl, tetrazolyl and the like. Examples of the 6-membered heteroaryl group include pyridyl, pyridyl base, pyrimidinyl, da base, three Base et al.
式(I)或(II)中之R 1、R 2、R 3、R 4、R 5、R 6、R 7、R 8、R 9及R 10中之烷基可為直鏈,亦可為支鏈。構成碳數較佳為1~6個。作為烷基,可列舉:甲基、乙基、正丙基、正丁基、正戊基、正己基、異丙基、異丁基、第二丁基、第三丁基、異戊基、新戊基、2-甲基丁基、2,2-二甲基丙基、異己基等。 The alkyl group in R 1 , R 2 , R 3 , R 4 , R 5 , R 6 , R 7 , R 8 , R 9 and R 10 in formula (I) or (II) can be straight chain or can be for branched chain. The number of constituent carbon atoms is preferably 1 to 6. Examples of the alkyl group include methyl, ethyl, n-propyl, n-butyl, n-pentyl, n-hexyl, isopropyl, isobutyl, sec-butyl, tert-butyl, isopentyl, Neopentyl, 2-methylbutyl, 2,2-dimethylpropyl, isohexyl, etc.
作為「烷基」上之取代基,可列舉:氟基、氯基、溴基、碘基等鹵素基;羥基;甲氧基、乙氧基、正丙氧基、異丙氧基、正丁氧基、第二丁氧基、異丁氧基、第三丁氧基等C1~6烷氧基;2-氯正丙氧基、2,3-二氯丁氧基、三氟甲氧基等C1~6鹵烷氧基;苯基;4-氯苯基、4-三氟甲基苯基、4-三氟甲氧基苯基等經鹵素基、C1~6鹵烷基或C1~6鹵烷氧基取代之苯基;或氰基。Examples of substituents on the "alkyl" include halogen groups such as fluoro, chloro, bromo, and iodo; hydroxy; methoxy, ethoxy, n-propoxy, isopropoxy, n-butyl C1-6 alkoxy such as oxy, second butoxy, isobutoxy, third butoxy; 2-chloro-n-propoxy, 2,3-dichlorobutoxy, trifluoromethoxy such as C1-6 haloalkoxy; phenyl; 6 haloalkoxy substituted phenyl; or cyano.
作為式(I)中之R 7及R 8中之芳基,可列舉:苯基、萘基。 作為「苯基」或「萘基」上之取代基,可列舉:氟基、氯基、溴基、碘基等鹵素基;甲基、乙基、正丙基、異丙基、正丁基、第二丁基、異丁基、第三丁基、正戊基、正己基等C1~6烷基;氯甲基、氯乙基、三氟甲基、1,2-二氯正丙基、1-氟正丁基等C1~6鹵烷基;羥基;甲氧基、乙氧基、正丙氧基、異丙氧基、正丁氧基、第二丁氧基、異丁氧基、第三丁氧基等C1~6烷氧基;2-氯正丙氧基、2,3-二氯丁氧基、三氟甲氧基等C1~6鹵烷氧基;或氰基。 As the aryl group in R 7 and R 8 in the formula (I), a phenyl group and a naphthyl group can be mentioned. Examples of substituents on "phenyl" or "naphthyl" include halogen groups such as fluoro, chloro, bromo, and iodo; methyl, ethyl, n-propyl, isopropyl, n-butyl , 2-butyl, isobutyl, tert-butyl, n-pentyl, n-hexyl and other C1-6 alkyl groups; chloromethyl, chloroethyl, trifluoromethyl, 1,2-dichloro-n-propyl , 1-fluoro-n-butyl and other C1-6 haloalkyl; hydroxyl; methoxy, ethoxy, n-propoxy, isopropoxy, n-butoxy, second butoxy, isobutoxy , C1-6 alkoxy such as tert-butoxy; C1-6 haloalkoxy such as 2-chloro-n-propoxy, 2,3-dichlorobutoxy, trifluoromethoxy; or cyano.
於R 7為經取代或未經取代之芳基時,該芳基可與A1環連結而形成縮合環。 於R 8為經取代或未經取代之芳基時,該芳基可與A2環連結而形成縮合環。 When R 7 is a substituted or unsubstituted aryl group, the aryl group may be linked with the A1 ring to form a condensed ring. When R 8 is a substituted or unsubstituted aryl group, the aryl group can be linked to the A2 ring to form a condensed ring.
作為本發明之含硼化合物之具體例,可列舉如下者。然而,該等僅為例示,本發明並不限定於例示之化合物。Specific examples of the boron-containing compound of the present invention include the following. However, these are only exemplifications, and the present invention is not limited to the exemplified compounds.
本發明之含硼化合物可藉由將公知之合成反應(例如偶合反應、取代反應等)加以組合進行而獲得。The boron-containing compound of the present invention can be obtained by combining well-known synthetic reactions (eg, coupling reaction, substitution reaction, etc.).
例如,作為式(I)所表示之化合物之一之BBCz-R例如可以如下方式獲得。For example, BBCz-R, which is one of the compounds represented by the formula (I), can be obtained, for example, as follows.
(例1) (example 1)
向300 mL之舒倫克燒瓶(Schlenk flask)中添加t-BuOK(2.24 g、20.0 mmol)、脫水DMF(180 mL)及3,6-二第三丁基-咔唑(5.58 g、20.0 mmol),並於室溫攪拌30分鐘。向其中添加2-溴-1,3-二氟苯(5.78 g、30.0 mmol),並進行24小時回流。將獲得之液體注加至水中,繼而添加二氯甲烷進行萃取。向獲得之有機層中添加硫酸鎂使其乾燥,繼而進行過濾,並利用旋轉蒸發器進行濃縮。利用矽膠管柱層析法(正己烷/氯仿=4/1)對濃縮物進行分離純化,從而獲得BCz-Br之白色固形物4.51 g(產率50%)。 1H-NMR (400 MHz, CDCl 3, δ): 8.13 (d, J = 1.4 Hz, 2H), 7.48-7.45 (m, 1H), 7.43 (dd, J = 8.8, 2.0 Hz, 2H), 7.31-7.26 (m, 2H), 6.99-6.94 (m, 2H), 1.45 (s, 18H) To a 300 mL Schlenk flask was added t-BuOK (2.24 g, 20.0 mmol), dehydrated DMF (180 mL) and 3,6-di-tert-butyl-carbazole (5.58 g, 20.0 mmol) ) and stirred at room temperature for 30 minutes. Thereto was added 2-bromo-1,3-difluorobenzene (5.78 g, 30.0 mmol), and the mixture was refluxed for 24 hours. The obtained liquid was poured into water, followed by addition of dichloromethane for extraction. To the obtained organic layer, magnesium sulfate was added and dried, followed by filtration, and concentrated by a rotary evaporator. The concentrate was separated and purified by silica gel column chromatography (n-hexane/chloroform=4/1) to obtain 4.51 g of BCz-Br as a white solid (yield 50%). 1 H-NMR (400 MHz, CDCl 3 , δ): 8.13 (d, J = 1.4 Hz, 2H), 7.48-7.45 (m, 1H), 7.43 (dd, J = 8.8, 2.0 Hz, 2H), 7.31 -7.26 (m, 2H), 6.99-6.94 (m, 2H), 1.45 (s, 18H)
向300 mL之舒倫克燒瓶中添加t-BuOK(2.81 g、25.0 mmol)、脫水DMF(180 mL)及2,8-二第三丁基-5,11-二氫吲哚并[3,2-b]咔唑(3.69 g、10.0 mmol),並於室溫攪拌30分鐘。向其中添加BCz-Br(11.30 g、25.0 mmol),並進行24小時回流。將獲得之液體注加至水中,繼而添加二氯甲烷進行萃取。向獲得之有機層中添加硫酸鎂使其乾燥,繼而進行過濾,利用旋轉蒸發器進行濃縮。利用矽膠管柱層析法(正己烷/氯仿=3/1)對濃縮物進行分離純化,從而獲得2BCz-INCz-Br之白色固形物4.82 g(產率39%)。 1H-NMR (400 MHz, CDCl 3, δ): 8.21-8.18 (m, 6H), 7.85 (s, 2H), 7.78-7.70 (m, 6H), 7.59-7.53 (m, 6H), 7.32 (d, J = 8.8 Hz, 2H), 7.20 (dd, J = 8.5, 6.0 Hz, 4H), 1.52 (s, 19H), 1.49 (d, J = 2.0 Hz, 36H). To a 300 mL Schlenk flask was added t-BuOK (2.81 g, 25.0 mmol), dehydrated DMF (180 mL) and 2,8-di-tert-butyl-5,11-indolino[3, 2-b]carbazole (3.69 g, 10.0 mmol) and stirred at room temperature for 30 minutes. Thereto was added BCz-Br (11.30 g, 25.0 mmol), and the mixture was refluxed for 24 hours. The obtained liquid was poured into water, followed by addition of dichloromethane for extraction. To the obtained organic layer, magnesium sulfate was added and dried, followed by filtration, and concentrated by a rotary evaporator. The concentrate was separated and purified by silica gel column chromatography (n-hexane/chloroform=3/1) to obtain 4.82 g of 2BCz-INCz-Br as a white solid (yield 39%). 1 H-NMR (400 MHz, CDCl 3 , δ): 8.21-8.18 (m, 6H), 7.85 (s, 2H), 7.78-7.70 (m, 6H), 7.59-7.53 (m, 6H), 7.32 ( d, J = 8.8 Hz, 2H), 7.20 (dd, J = 8.5, 6.0 Hz, 4H), 1.52 (s, 19H), 1.49 (d, J = 2.0 Hz, 36H).
向300 mL之舒倫克燒瓶中添加2BCz-INCz-Br(1.11 g、0.90 mmol)及脫水第三丁基苯(120 mL)。繼而,進行氮置換。於0℃向其中逐次少量地添加正丁基鋰(1.7 mL、1.6 M、2.70 mmol),並於室溫攪拌4小時。於0℃向其中逐次少量地添加三溴化硼(0.30 mL、2.70 mol),並於室溫攪拌一晩。繼而,於0℃添加N,N-二異丙基乙基胺(0.70 mL、4.05 mmol),並於170℃攪拌24小時。使獲得之液體恢復至室溫,並注加至水中。其後,添加氯仿進行萃取。對獲得之有機層進行過濾。對過濾液進行水洗。其後,添加硫酸鎂使其乾燥,並利用旋轉蒸發器進行濃縮。利用矽膠管柱層析法(正己烷/氯仿=9/1)對濃縮物進行分離純化,從而獲得BBCz-R之黑色結晶0.054 g(產率5%)。 1H-NMR (400 MHz, CDCl 3, δ): 8.67 (d, J = 1.8 Hz, 2H), 8.46 (d, J = 8.8 Hz, 2H), 8.43-8.31 (m, 12H), 8.10 (t, J = 8.2 Hz, 2H), 7.74 (dd, J = 8.5, 2.0 Hz, 2H), 7.51 (dd, J = 8.5, 1.8 Hz, 2H), 1.58 (s, 18H), 1.32 (s, 18H), 1.09 (s, 18H) To a 300 mL Schlenk flask was added 2BCz-INCz-Br (1.11 g, 0.90 mmol) and dehydrated tert-butylbenzene (120 mL). Next, nitrogen replacement is performed. To this, n-butyllithium (1.7 mL, 1.6 M, 2.70 mmol) was added little by little at 0°C, followed by stirring at room temperature for 4 hours. To this, boron tribromide (0.30 mL, 2.70 mol) was added little by little at 0°C, followed by stirring at room temperature overnight. Next, N,N-diisopropylethylamine (0.70 mL, 4.05 mmol) was added at 0°C, followed by stirring at 170°C for 24 hours. The obtained liquid was returned to room temperature and added to water. Then, chloroform was added for extraction. The obtained organic layer was filtered. The filtrate was washed with water. Then, magnesium sulfate was added and it was made to dry, and it concentrated by a rotary evaporator. The concentrate was separated and purified by silica gel column chromatography (n-hexane/chloroform=9/1) to obtain 0.054 g of black crystals of BBCz-R (yield 5%). 1 H-NMR (400 MHz, CDCl 3 , δ): 8.67 (d, J = 1.8 Hz, 2H), 8.46 (d, J = 8.8 Hz, 2H), 8.43-8.31 (m, 12H), 8.10 (t , J = 8.2 Hz, 2H), 7.74 (dd, J = 8.5, 2.0 Hz, 2H), 7.51 (dd, J = 8.5, 1.8 Hz, 2H), 1.58 (s, 18H), 1.32 (s, 18H) , 1.09 (s, 18H)
合成之化合物之純化可藉由利用管柱層析儀之純化、利用矽膠、活性碳、活性白土等之吸附純化、利用溶劑之再結晶或晶析法等而進行。化合物之鑑定可藉由NMR分析等而進行。The purification of the synthesized compound can be carried out by purification using column chromatography, adsorption purification using silica gel, activated carbon, activated clay, etc., recrystallization or crystallization using a solvent, and the like. Identification of the compound can be performed by NMR analysis or the like.
本發明之含硼化合物可用作發光材料。本發明之發光材料可提供有機光致發光元件、有機電致發光元件等發光元件。本發明之含硼化合物具有輔助其他發光材料(主體材料)之發光之功能,故可摻雜至其他發光材料中使用。The boron-containing compound of the present invention can be used as a light-emitting material. The light-emitting material of the present invention can provide light-emitting elements such as organic photoluminescence elements and organic electroluminescence elements. The boron-containing compound of the present invention has the function of assisting the light emission of other light-emitting materials (host materials), so it can be doped into other light-emitting materials for use.
本發明之有機光致發光元件係於基板上設置含有本發明之發光材料之發光層而成者。發光層可藉由如旋轉塗佈等之塗佈法、如噴墨印刷法等之印刷法、蒸鍍法等而獲得。The organic photoluminescence element of the present invention is formed by disposing a light-emitting layer containing the light-emitting material of the present invention on a substrate. The light-emitting layer can be obtained by a coating method such as spin coating, a printing method such as an inkjet printing method, a vapor deposition method, or the like.
本發明之有機電致發光元件係於陽極與陰極之間設置有機層而成者。本發明中之「有機層」意指位於陽極與陰極之間之實質上由有機物構成之層,該等層可於不損害本發明之發光元件之性能之範圍內包含無機物。The organic electroluminescence element of the present invention is formed by disposing an organic layer between the anode and the cathode. The "organic layer" in the present invention means a layer substantially composed of an organic substance located between the anode and the cathode, and these layers may contain inorganic substances within the range not impairing the performance of the light-emitting element of the present invention.
作為本發明之有機電致發光元件之一實施形態中之構造,可列舉:於基板上依序由陽極、電洞注入層、電洞傳輸層、電子阻擋層、發光層、電洞阻擋層、電子傳輸層、陰極構成者;以及於電子傳輸層與陰極之間進而具有電子注入層者。於該等多層構造中,可省略幾層有機層,例如可於基板上依序設置陽極、電洞傳輸層、發光層、電子傳輸層、電子注入層、陰極,亦可設置陽極、電洞傳輸層、發光層、電子傳輸層、陰極。本發明之發光材料不僅可摻雜於發光層中,亦可摻雜於電洞注入層、電洞傳輸層、電子阻擋層、電洞阻擋層、電子傳輸層或電子注入層中。As the structure in one embodiment of the organic electroluminescence element of the present invention, an anode, a hole injection layer, a hole transport layer, an electron blocking layer, a light emitting layer, a hole blocking layer, an anode, a hole injection layer, a hole transport layer, an electron blocking layer, a light emitting layer, a hole blocking layer, An electron transport layer and a cathode constitute; and an electron injection layer is further provided between the electron transport layer and the cathode. In these multi-layer structures, several organic layers can be omitted. For example, an anode, a hole transport layer, a light-emitting layer, an electron transport layer, an electron injection layer, and a cathode can be arranged on the substrate in sequence, and an anode and a hole transport layer can also be arranged. layer, light-emitting layer, electron transport layer, cathode. The light-emitting material of the present invention can be doped not only in the light-emitting layer, but also in the hole injection layer, the hole transport layer, the electron blocking layer, the hole blocking layer, the electron transport layer or the electron injection layer.
基板係成為發光元件之支持體者,可使用矽板、石英板、玻璃板、金屬板、金屬箔、樹脂膜、樹脂片等。尤其較佳為玻璃板或聚酯、聚甲基丙烯酸酯、聚碳酸酯、聚碸等透明之合成樹脂之板。於使用合成樹脂基板之情形時,必須留意阻氣性。若基板之阻氣性過低,則存在發光元件因通過基板之外部氣體而劣化之情況。因此,較佳為於合成樹脂基板之任一單側或兩側設置緻密之矽氧化膜等而確保阻氣性。The substrate is a support of the light-emitting element, and a silicon plate, a quartz plate, a glass plate, a metal plate, a metal foil, a resin film, a resin sheet, etc. can be used. In particular, it is preferably a glass plate or a transparent synthetic resin plate such as polyester, polymethacrylate, polycarbonate, and polysilicon. When using a synthetic resin substrate, attention must be paid to the gas barrier properties. If the gas barrier properties of the substrate are too low, the light-emitting element may be degraded by outside air passing through the substrate. Therefore, it is preferable to provide a dense silicon oxide film or the like on either one side or both sides of the synthetic resin substrate to ensure gas barrier properties.
於基板上設置陽極。陽極一般使用功函數較大之材料。作為陽極用材料,例如可列舉:鋁、金、銀、鎳、鈀、鉑等金屬;銦氧化物、錫氧化物、ITO、氧化鋅、In 2O 3-ZnO、IGZO等金屬氧化物、碘化銅等鹵化金屬、碳黑或聚(3-甲基噻吩)、聚吡咯、聚苯胺等導電性高分子等。陽極之形成通常多數情況藉由濺鍍法、真空蒸鍍法等而進行。又,於銀等金屬微粒子、碘化銅等微粒子、碳黑、導電性之金屬氧化物微粒子、導電性高分子微粉末等情形時,亦可藉由分散於適當之黏合劑樹脂溶液中,並塗佈於基板上而形成陽極。進而,於導電性高分子之情形時,亦可藉由電解聚合而直接於基板上形成薄膜或於基板上塗佈導電性高分子而形成陽極。 An anode is provided on the substrate. The anode generally uses a material with a larger work function. Examples of the anode material include metals such as aluminum, gold, silver, nickel, palladium, and platinum; metal oxides such as indium oxide, tin oxide, ITO, zinc oxide, In 2 O 3 -ZnO, and IGZO; Halogenated metals such as copper, carbon black, poly(3-methylthiophene), polypyrrole, polyaniline and other conductive polymers. The formation of the anode is usually performed by a sputtering method, a vacuum evaporation method, or the like in many cases. In addition, in the case of metal fine particles such as silver, fine particles such as copper iodide, carbon black, conductive metal oxide fine particles, conductive polymer fine powder, etc., it can also be dispersed in a suitable binder resin solution, and The anode is formed by coating on the substrate. Furthermore, in the case of a conductive polymer, a thin film may be directly formed on a substrate by electrolytic polymerization, or an anode may be formed by coating a conductive polymer on the substrate.
陽極亦可積層不同之2種以上物質而形成。陽極之厚度根據所需之透明性而不同。於需要透明性之情形時,理想為將可見光之穿透率通常設為60%以上,較佳為80%以上,於該情形時,厚度通常為10~1000 nm,較佳為10~200 nm。於可為不透明之情形時,陽極可為與基板之厚度相同程度。陽極之片電阻較佳為數百Ω/□以上。The anode may be formed by laminating two or more different substances. The thickness of the anode varies according to the desired transparency. When transparency is required, it is desirable that the transmittance of visible light is usually set to 60% or more, preferably 80% or more, in this case, the thickness is usually 10-1000 nm, preferably 10-200 nm . Where it may be opaque, the anode may be about the same thickness as the substrate. The sheet resistance of the anode is preferably hundreds of Ω/□ or more.
作為視需要設置之電洞注入層,除以銅酞青為代表之卟啉化合物以外,亦可使用萘二胺衍生物、星爆型之三苯胺衍生物、分子中具有3個以上三苯胺結構由單鍵或不含雜原子之2價基連結之結構之芳基胺化合物等三苯胺三聚物及四聚物、如六氰基氮雜聯三伸苯之受體性之雜環化合物或塗佈型之高分子材料。該等材料除蒸鍍法以外,亦可藉由旋轉塗佈法或噴墨法等公知之方法而進行薄膜形成。As the hole injection layer to be provided as needed, in addition to porphyrin compounds represented by copper phthalocyanine, naphthalene diamine derivatives, starburst triphenylamine derivatives, and triphenylamine structures having three or more molecules in the molecule can also be used. Triphenylamine trimers and tetramers such as arylamine compounds with a structure linked by a single bond or a divalent group not containing a heteroatom, acceptor heterocyclic compounds such as hexacyanoazatriphenylene, or Coated polymer material. These materials can be formed into thin films by well-known methods such as spin coating and inkjet methods in addition to the vapor deposition method.
作為視需要設置之電洞傳輸層所使用之電洞傳輸材料,較佳為自陽極之電洞注入效率較高,且可高效率地傳輸所注入之電洞。因此,較佳為離子化電位較小,對可見光之光之透明性較高,且電洞遷移率較大,進而穩定性優異,於製造時或使用時不易產生成為阱之雜質。除上述一般要求以外,於考慮應用於車輛顯示用途之情形時,較佳為對元件之耐熱性更高。因此,理想為作為Tg具有70℃以上之值之材料。As the hole transport material used in the hole transport layer provided as needed, it is preferable that the hole injection efficiency from the anode is high, and the injected holes can be transported efficiently. Therefore, it is preferable that the ionization potential is small, the transparency to visible light is high, the hole mobility is high, and the stability is excellent, and impurities that become traps are not easily generated during manufacture or use. In addition to the above general requirements, when considering the application in vehicle display applications, it is preferable to have higher heat resistance to the components. Therefore, a material having a value of 70° C. or higher as Tg is desirable.
作為視需要設置之電洞傳輸層,可列舉:三唑衍生物、二唑衍生物、咪唑衍生物、咔唑衍生物、吲哚并咔唑衍生物、多芳基烷烴衍生物、吡唑啉衍生物、吡唑哢衍生物、苯二胺衍生物、芳基胺衍生物、胺基取代查耳酮衍生物、唑衍生物、苯乙烯基蒽衍生物、茀酮衍生物、腙衍生物、茋衍生物、矽氮烷衍生物、苯胺系共聚物、導電性高分子低聚物等。更具體而言,可列舉:含有間咔唑基苯基之化合物、N,N'-二苯基-N,N'-二(間甲苯基)-聯苯胺(以下簡稱為TPD)、N,N'-二苯基-N,N'-二(α-萘基)-聯苯胺(以下簡稱為NPD)、N,N,N',N'-四聯苯基聯苯胺等聯苯胺衍生物、1,1-雙[(二-4-甲苯基胺基)苯基]環己烷(以下簡稱為TAPC)、各種三苯胺三聚物及四聚物或咔唑衍生物等。該等可單獨使用1種或將2種以上加以組合而使用。電洞傳輸層可為單層構造之膜,亦可為積層構造之膜。又,作為電洞之注入/傳輸層,可使用聚(3,4-伸乙二氧基噻吩)(以下簡稱為PEDOT)/聚(苯乙烯磺酸鹽)(以下簡稱為PSS)等塗佈型之高分子材料。該等材料除蒸鍍法以外,亦可藉由旋轉塗佈法或噴墨法等公知之方法而進行薄膜形成。As the hole transport layer provided as needed, triazole derivatives, Diazole derivatives, imidazole derivatives, carbazole derivatives, indolocarbazole derivatives, polyarylalkane derivatives, pyrazoline derivatives, pyrazole derivatives, phenylenediamine derivatives, arylamines Derivatives, amino-substituted chalcone derivatives, azole derivatives, styryl anthracene derivatives, phenone derivatives, hydrazone derivatives, stilbene derivatives, silazane derivatives, aniline-based copolymers, conductive polymer oligomers, etc. More specifically, a compound containing m-carbazolyl phenyl group, N,N'-diphenyl-N,N'-bis(m-tolyl)-benzidine (hereinafter abbreviated as TPD), N,N'-diphenyl-N,N'-bis(m-tolyl)-benzidine (hereinafter abbreviated as TPD), Benzidine derivatives such as N'-diphenyl-N,N'-bis(α-naphthyl)-benzidine (hereinafter referred to as NPD), N,N,N',N'-tetraphenylbenzidine , 1,1-bis[(bis-4-tolylamino)phenyl]cyclohexane (hereinafter referred to as TAPC), various triphenylamine trimers and tetramers or carbazole derivatives. These can be used individually by 1 type or in combination of 2 or more types. The hole transport layer may be a film of a single-layer structure or a film of a laminated structure. In addition, as a hole injection/transport layer, a coating such as poly(3,4-ethylenedioxythiophene) (hereinafter abbreviated as PEDOT)/poly(styrene sulfonate) (hereinafter abbreviated as PSS) can be used. type of polymer material. These materials can be formed into thin films by well-known methods such as spin coating and inkjet methods in addition to the vapor deposition method.
又,於電洞注入層或電洞傳輸層中,可使用於該層中通常使用之材料中進而P摻雜三溴苯基胺六氯銻而成者、或其部分結構具有PD結構之高分子化合物等。作為電洞注入/傳輸性之主體材料,可使用CBP或TCTA、mCP等咔唑衍生物等。In addition, in the hole injection layer or the hole transport layer, it can be used in the material commonly used in the layer and then P-doped with antimony tribromophenylamine hexachloride, or its partial structure has a high PD structure. molecular compounds, etc. As the host material for hole injection and transport properties, carbazole derivatives such as CBP, TCTA, and mCP can be used.
以下列舉可用作電洞注入材料之較佳之化合物(hi1)~(hi7)。Preferred compounds (hi1) to (hi7) that can be used as hole injection materials are listed below.
以下列舉可用作電洞傳輸材料之較佳之化合物(ht1)~(ht38)。Preferred compounds (ht1) to (ht38) that can be used as hole transport materials are listed below.
作為視需要設置之電子阻擋層,可使用4,4',4''-三(N-咔唑基)三苯胺(以下簡稱為TCTA)、9,9-雙[4-(咔唑-9-基)苯基]茀、1,3-雙(咔唑-9-基)苯(以下簡稱為mCP)、2,2-雙(4-咔唑-9-基苯基)金剛烷(以下簡稱為Ad-Cz)等咔唑衍生物、以9-[4-(咔唑-9-基)苯基]-9-[4-(三苯基矽基)苯基]-9H-茀為代表之具有三苯基矽基及三芳基胺結構之化合物等具有電子阻擋作用之化合物。該等可單獨使用1種或將2種以上加以組合而使用。電子阻擋層可為單層構造之膜,亦可為積層構造之膜。該等材料除蒸鍍法以外,亦可藉由旋轉塗佈法或噴墨法等公知之方法而進行薄膜形成。As an optional electron blocking layer, 4,4',4''-tris(N-carbazolyl)triphenylamine (hereinafter abbreviated as TCTA), 9,9-bis[4-(carbazole-9 -yl)phenyl] benzene, 1,3-bis(carbazol-9-yl)benzene (hereinafter referred to as mCP), 2,2-bis(4-carbazol-9-ylphenyl)adamantane (hereinafter referred to as mCP) Abbreviated as Ad-Cz) and other carbazole derivatives, 9-[4-(carbazol-9-yl)phenyl]-9-[4-(triphenylsilyl)phenyl]-9H- Representative compounds with triphenylsilyl and triarylamine structures, such as compounds with electron blocking effect. These can be used individually by 1 type or in combination of 2 or more types. The electron blocking layer may be a film of a single-layer structure, or may be a film of a laminated structure. These materials can be formed into thin films by well-known methods such as spin coating and inkjet methods in addition to the vapor deposition method.
以下列舉可用作電子阻擋材料之較佳之化合物(es1)~(es5)。Preferred compounds (es1) to (es5) that can be used as electron blocking materials are listed below.
發光層係具有如下功能之層,即,藉由自陽極及陰極各者注入之電洞及電子再結合而生成激子,從而進行發光。發光層可由本發明之發光材料單獨形成,亦可於主體材料中摻雜本發明之發光材料而形成。作為主體材料之例,可列舉:三(8-羥基喹啉)鋁(以下簡稱為Alq3)等羥喹啉衍生物之金屬錯合物、蒽衍生物、雙苯乙烯基苯衍生物、芘衍生物、唑衍生物、聚對伸苯乙烯(polyparaphenylene vinylene)衍生物、具有聯吡啶基及鄰聯三苯基結構之化合物、mCP、噻唑衍生物、苯并咪唑衍生物、聚二烷基茀衍生物等。發光層中亦可包含公知之摻雜劑。作為摻雜劑,可列舉:喹吖酮、香豆素、紅螢烯、蒽、苝及該等之衍生物、苯并哌喃衍生物、玫瑰紅衍生物、胺基苯乙烯基衍生物等。又,亦可使用Ir(ppy)3等綠色之磷光發光體、FIrpic、FIr6等藍色之磷光發光體、Btp2Ir(acac)等紅色之磷光發光體等磷光性之發光體。該等可單獨使用1種或將2種以上加以組合而使用。發光層可為單層構造之膜,亦可為積層構造之膜。該等材料除蒸鍍法以外,亦可藉由旋轉塗佈法或噴墨法等公知之方法而進行薄膜形成。 於使用主體材料之情形時,發光層中可含有之本發明之發光材料之量之下限較佳為0.1質量%,更佳為1質量%,上限較佳為50質量%,更佳為20質量%,進而較佳為10質量%。 The light-emitting layer is a layer having a function of generating excitons by recombination of holes and electrons injected from each of the anode and the cathode, thereby emitting light. The light-emitting layer can be formed by the light-emitting material of the present invention alone, or by doping the light-emitting material of the present invention into the host material. Examples of host materials include metal complexes of hydroxyquinoline derivatives such as tris(8-hydroxyquinoline)aluminum (hereinafter abbreviated as Alq3), anthracene derivatives, bis-styrylbenzene derivatives, and pyrene derivatives. things, azole derivatives, polyparaphenylene vinylene derivatives, compounds with bipyridyl and o-triphenyl structures, mCP, thiazole derivatives, benzimidazole derivatives, polydialkylene derivatives, etc. . A well-known dopant may also be contained in the light-emitting layer. Examples of dopants include quinacridone, coumarin, rubrene, anthracene, perylene and derivatives thereof, benzopyran derivatives, rose bengal derivatives, aminostyryl derivatives, and the like . In addition, phosphorescent emitters such as green phosphorescent emitters such as Ir(ppy)3, blue phosphorescent emitters such as FIrpic and FIr6, and red phosphorescent emitters such as Btp2Ir(acac) can also be used. These can be used individually by 1 type or in combination of 2 or more types. The light-emitting layer may be a film of a single-layer structure, or may be a film of a laminated structure. These materials can be formed into thin films by well-known methods such as spin coating and inkjet methods in addition to the vapor deposition method. In the case of using a host material, the lower limit of the amount of the light-emitting material of the present invention that can be contained in the light-emitting layer is preferably 0.1 mass %, more preferably 1 mass %, and the upper limit is preferably 50 mass %, more preferably 20 mass % %, more preferably 10% by mass.
以下列舉可用作發光層之主體材料之較佳之化合物(el1)~(el40)。Preferred compounds (el1) to (el40) that can be used as the host material of the light-emitting layer are listed below.
作為視需要設置之電洞阻擋層,可列舉:具有聯吡啶基及鄰聯三苯基結構之化合物、浴銅靈(bathocuproine)(以下簡稱為BCP)等啡啉衍生物或雙(2-甲基-8-喹啉)-4-苯基苯酚鋁(III)(以下簡稱為BAlq)等羥喹啉衍生物之金屬錯合物、各種稀土類錯合物、唑衍生物、三唑衍生物、三衍生物等具有電洞阻擋作用之化合物。該等材料亦可兼作電子傳輸層之材料。該等可單獨使用1種或將2種以上加以組合而使用。電洞阻擋層可為單層構造之膜,亦可為積層構造之膜。該等材料除蒸鍍法以外,亦可藉由旋轉塗佈法或噴墨法等公知之方法而進行薄膜形成。Examples of the hole blocking layer to be provided as needed include compounds having bipyridyl and o-triphenyl structures, phenanthroline derivatives such as bathocuproine (hereinafter abbreviated as BCP), or bis(2-methyl) Metal complexes of hydroxyquinoline derivatives such as oxyquinoline derivatives, various rare earth complexes, azole derivatives, triazole derivatives, triazole Derivatives and other compounds with hole blocking effect. These materials can also serve as materials for the electron transport layer. These can be used individually by 1 type or in combination of 2 or more types. The hole blocking layer may be a film of a single-layer structure or a film of a laminated structure. These materials can be formed into thin films by well-known methods such as spin coating and inkjet methods in addition to the vapor deposition method.
以下列舉可用作電洞阻擋材料之較佳之化合物(hs1)~(hs11)。 Preferred compounds (hs1) to (hs11) that can be used as hole blocking materials are listed below.
作為視需要設置之電子傳輸層,除以Alq3、BAlq為代表之羥喹啉衍生物之金屬錯合物以外,亦可使用各種金屬錯合物、三唑衍生物、三衍生物、二唑衍生物、噻二唑衍生物、碳二醯亞胺衍生物、喹啉衍生物、啡啉衍生物、噻咯衍生物(silole derivative)等。該等可單獨使用1種或將2種以上加以組合而使用。電子傳輸層可為單層構造之膜,亦可為積層構造之膜。該等材料除蒸鍍法以外,亦可藉由旋轉塗佈法或噴墨法等公知之方法而進行薄膜形成。As the electron transport layer provided as needed, in addition to metal complexes of hydroxyquinoline derivatives represented by Alq3 and BAlq, various metal complexes, triazole derivatives, triazole derivatives, etc. derivative, oxadiazole derivatives, thiadiazole derivatives, carbodiimide derivatives, quinoline phenoline derivatives, phenanthroline derivatives, silole derivatives and the like. These can be used individually by 1 type or in combination of 2 or more types. The electron transport layer may be a film of a single-layer structure, or may be a film of a laminated structure. These materials can be formed into thin films by well-known methods such as spin coating and inkjet methods in addition to the vapor deposition method.
作為視需要設置之電子注入層,可使用氟化鋰、氟化銫等鹼金屬鹽、氟化鎂等鹼土類金屬鹽、氧化鋁等金屬氧化物等,但於電子傳輸層及陰極之較佳之選擇中,可將其省略。As the electron injection layer provided as needed, alkali metal salts such as lithium fluoride and cesium fluoride, alkaline earth metal salts such as magnesium fluoride, and metal oxides such as alumina can be used, but the electron transport layer and the cathode are preferably used. If selected, it can be omitted.
於電子注入層或電子傳輸層中,可使用於該層中通常使用之材料中進而N摻雜銫等金屬而成者。In the electron injection layer or the electron transport layer, it can be used in the material commonly used in the layer, and N-doped metal such as cesium can be used.
以下列舉可用作電子傳輸材料之較佳之化合物(et1)~(et30)。Preferred compounds (et1) to (et30) that can be used as electron transport materials are listed below.
以下列舉可用作電子注入材料之較佳之化合物(ei1)~(ei4)。Preferred compounds (ei1) to (ei4) that can be used as electron injection materials are listed below.
以下列舉可用作穩定化材料之較佳之化合物(st1)~(st5)。Preferred compounds (st1) to (st5) that can be used as a stabilization material are listed below.
陰極一般使用功函數較小之材料。作為陰極用材料,例如可使用鈉、鈉-鉀合金、鋰、錫、鎂、鎂/銅混合物、鎂/鋁混合物、鎂/銦混合物、鋁/氧化鋁混合物、銦、鈣、鋁、銀、鋰/鋁混合物、鎂銀合金、鎂銦合金、鋁鎂合金等。藉由使用透明導電性材料,可獲得透明或半透明之陰極。陰極之厚度通常為10~5000 nm,較佳為50~200 nm。陰極之片電阻較佳為數百Ω/□以上。The cathode generally uses a material with a smaller work function. As the cathode material, for example, sodium, sodium-potassium alloy, lithium, tin, magnesium, magnesium/copper mixture, magnesium/aluminum mixture, magnesium/indium mixture, aluminum/alumina mixture, indium, calcium, aluminum, silver, Lithium/aluminum mixture, magnesium-silver alloy, magnesium-indium alloy, aluminum-magnesium alloy, etc. By using a transparent conductive material, a transparent or translucent cathode can be obtained. The thickness of the cathode is usually 10-5000 nm, preferably 50-200 nm. The sheet resistance of the cathode is preferably hundreds of Ω/□ or more.
再者,為了保護由低功函數金屬構成之陰極,若於其上進一步積層鋁、銀、鎳、鉻、金、鉑等功函數較高且對大氣穩定之金屬層,則增強元件之穩定性,故較佳。又,為了使陰極與相鄰之有機層(例如電子傳輸層或電子注入層)之接觸提昇,亦可於兩者之間設置陰極界面層。作為陰極界面層中使用之材料,可列舉:芳香族二胺化合物、喹吖酮化合物、稠四苯衍生物、有機矽化合物、有機磷化合物、具有N-苯基咔唑骨架之化合物、N-乙烯基咔唑聚合物等。Furthermore, in order to protect the cathode composed of low work function metal, if a metal layer with high work function and atmospheric stability such as aluminum, silver, nickel, chromium, gold, platinum, etc. is further laminated on it, the stability of the element will be enhanced. , so it is better. In addition, in order to improve the contact between the cathode and the adjacent organic layers (eg, the electron transport layer or the electron injection layer), a cathode interface layer can also be provided between the two. Examples of materials used for the cathode interface layer include aromatic diamine compounds, quinacridone compounds, condensed tetraphenyl derivatives, organosilicon compounds, organophosphorus compounds, compounds having an N-phenylcarbazole skeleton, N- vinylcarbazole polymers, etc.
本發明之發光元件可應用於單一之元件、由以陣列狀配置之構造構成之元件、陽極與陰極以X-Y矩陣狀配置之構造之任一者中。The light-emitting element of the present invention can be applied to any one of a single element, an element having a structure arranged in an array, and a structure having an anode and a cathode arranged in an X-Y matrix.
關於本發明之實施形態,以下展示其效果。The effects of the embodiments of the present invention will be shown below.
發光特性之評價係使用SourceMeter(吉時利公司製造:2400系列)、分光放射亮度計(柯尼卡美能達公司製造:CS-2000)、分光螢光光度計(日本分光公司製造:FP-8600)及100 mmΦ積分球(日本分光公司製造:ILF-835)進行。For evaluation of light emission characteristics, SourceMeter (manufactured by Keithley Corporation: 2400 series), spectroradiometer (manufactured by Konica Minolta: CS-2000), and spectrofluorophotometer (manufactured by Nippon Shoko: FP-8600) ) and a 100 mmΦ integrating sphere (manufactured by JASCO Corporation: ILF-835).
(例2) 於氮環境之手套箱中製備BBCz-R之甲苯溶液。對該溶液進行PL光譜測定。將其結果示於圖1。(Example 2) A toluene solution of BBCz-R was prepared in a nitrogen glove box. The solution was subjected to PL spectrometry. The results are shown in FIG. 1 .
BBCz-R: BBCz-R:
(例3) 藉由真空蒸鍍法(5.0×10
-4Pa以下)而於形成有由銦-錫氧化物(ITO)構成之陽極之玻璃基板上依序積層10 nm厚之2,3,6,7,10,11-六氰基-1,4,5,8,9,12-六氮雜聯三伸苯(HAT-CN)膜、50 nm厚之1,1-雙[4-[N,N-二(對甲苯基)胺基]苯基]環己烷(TAPC)膜、10 nm厚之mCBP膜、20 nm厚之2重量%BBCz-R:mCBP膜、10 nm厚之2,8-雙(二苯基磷醯基)二苯并[b,d]呋喃(PPF)膜、40 nm厚之1,3-雙[3,5-二(吡啶-3-基)苯基]苯(B3PyPB)膜。
(Example 3) 2, 3, 2, 3, 3, 2, 3, 3, 2, 3, 2, 3, 2, 3, 2, 3, 2, 3, 2, 3, 2, 3, 2, 3, 3, 2, 3, 2, 3, 2, 2, 3, 2, 2, 2, 2, 2, 2, 2 and 2, 10 nm thick of indium-tin oxide (ITO), were sequentially deposited by the vacuum deposition method (5.0×10 -4 Pa or less) by indium-tin oxide (ITO) anode. 6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazabitriphenylene (HAT-CN) film, 50 nm thick 1,1-bis[4- [N,N-bis(p-tolyl)amino]phenyl]cyclohexane (TAPC) film, 10 nm thick mCBP film, 20 nm thick 2wt% BBCz-R:mCBP film, 10 nm
繼而,藉由利用真空蒸鍍法依序積層1 nm厚之8-羥基喹啉鋰(8-hydroxyquinolinato lithium)膜及100 nm厚之鋁膜而形成陰極,從而獲得有機電致發光元件。 對有機電致發光元件之特性進行測定。於表1中示出發光特性。圖2中示出電流密度-外部量子效率特性。圖3中示出電壓-電流密度特性。 Then, a cathode is formed by sequentially layering a 1 nm-thick 8-hydroxyquinolinato lithium film and a 100-nm-thick aluminum film by vacuum evaporation, thereby obtaining an organic electroluminescence device. The characteristics of the organic electroluminescence element were measured. The light emission characteristics are shown in Table 1. The current density-external quantum efficiency characteristic is shown in FIG. 2 . The voltage-current density characteristics are shown in FIG. 3 .
[表1]
使用BBCz-R之發光元件顯示出最大外部量子效率22%之較高之值。表示發光光譜之寬度之FWHM(Full Width at Half Maximum:半峰全幅值)為26 nm之較窄之值。國際照明委員會CIE(Commission Internationale de l'Eclairage)xy色度圖中之色度座標為(0.67, 0.33),顯示出接近純紅色之顏色。The light-emitting element using BBCz-R showed a high value of 22% of the maximum external quantum efficiency. FWHM (Full Width at Half Maximum), which represents the width of the emission spectrum, is a narrow value of 26 nm. The chromaticity coordinates of the CIE (Commission Internationale de l'Eclairage) xy chromaticity diagram are (0.67, 0.33), showing a color close to pure red.
如以上,藉由由式(I)所表示之化合物構成之發光材料而獲得較高之發光特性。As above, higher light-emitting characteristics are obtained by the light-emitting material composed of the compound represented by the formula (I).
無none
[圖1]為表示本發明之發光材料之PL光譜之一例之圖。 [圖2]為表示本發明之發光元件之電流密度-外部量子效率特性之一例之圖。 [圖3]為表示本發明之發光元件之電壓-電流密度特性之一例之圖。 FIG. 1 is a diagram showing an example of the PL spectrum of the luminescent material of the present invention. 2 is a graph showing an example of the current density-external quantum efficiency characteristics of the light-emitting element of the present invention. 3 is a graph showing an example of the voltage-current density characteristics of the light-emitting element of the present invention.
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