TW202215906A - Apparatus for and method of controlling gas flow in an euv light source - Google Patents

Apparatus for and method of controlling gas flow in an euv light source

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TW202215906A
TW202215906A TW110110317A TW110110317A TW202215906A TW 202215906 A TW202215906 A TW 202215906A TW 110110317 A TW110110317 A TW 110110317A TW 110110317 A TW110110317 A TW 110110317A TW 202215906 A TW202215906 A TW 202215906A
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droplet
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約翰 湯姆 四世 史圖華特
馬克 蓋 蘭洛伊斯
悅 馬
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荷蘭商Asml荷蘭公司
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    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05GX-RAY TECHNIQUE
    • H05G2/00Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001X-ray radiation generated from plasma
    • H05G2/003X-ray radiation generated from plasma being produced from a liquid or gas
    • H05G2/005X-ray radiation generated from plasma being produced from a liquid or gas containing a metal as principal radiation generating component
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008Production of exposure light, i.e. light sources
    • G03F7/70033Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70916Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70933Purge, e.g. exchanging fluid or gas to remove pollutants
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05GX-RAY TECHNIQUE
    • H05G2/00Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001X-ray radiation generated from plasma
    • H05G2/008X-ray radiation generated from plasma involving a beam of energy, e.g. laser or electron beam in the process of exciting the plasma

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  • Health & Medical Sciences (AREA)
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  • Atmospheric Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Environmental & Geological Engineering (AREA)
  • Optics & Photonics (AREA)
  • X-Ray Techniques (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

Disclosed is a source for and method of generating extreme ultraviolet radiation in which a flow characteristic of a gas introduced into the source or exhausted from the source is varied at least partially in accordance with a prevailing source mode of operation such as whether the source is in an on-droplet mode of operation or an off-droplet mode of operation.

Description

用於控制極紫外線光源中之氣流之裝置及方法Apparatus and method for controlling airflow in an EUV light source

本發明係關於一種用於自容器中之源或目標材料經由放電或雷射切除而產生之電漿產生極紫外線(「EUV」)輻射的裝置及方法。在此類申請案中,使用光學元件(例如)以收集及引導輻射以用於半導體光微影及檢測中。The present invention relates to an apparatus and method for generating extreme ultraviolet ("EUV") radiation from a plasma generated by electrical discharge or laser ablation of a source or target material in a container. In such applications, optical elements are used, for example, to collect and direct radiation for use in semiconductor photolithography and inspection.

可在光微影製程中使用極紫外線輻射,例如具有大約50 nm或更小之波長的電磁輻射(有時亦稱為軟x射線)且包括波長為約13.5 nm之輻射,以在諸如矽晶圓之基板中產生極小特徵。Extreme ultraviolet radiation, such as electromagnetic radiation (sometimes also referred to as soft x-rays) having a wavelength of about 50 nm or less, and including radiation with a wavelength of about 13.5 nm, can be used in photolithography processes to produce Very small features are created in a circular substrate.

用於產生EUV輻射之方法包括將目標材料轉換成電漿狀態。目標材料較佳包括具有在電磁光譜之EUV部分中之一或多個發射譜線的至少一個元素,例如,氙、鋰或錫。目標材料可為固體、液體或氣體。在常常被稱為雷射產生電漿(「LPP」)之一種此類方法中,所需之電漿可藉由使用雷射光束來輻照具有所需譜線發射元素之目標材料而產生。Methods for generating EUV radiation include converting the target material into a plasmonic state. The target material preferably includes at least one element having one or more emission lines in the EUV portion of the electromagnetic spectrum, eg, xenon, lithium, or tin. The target material can be solid, liquid or gas. In one such method, often referred to as laser generated plasma ("LPP"), the desired plasma can be generated by using a laser beam to irradiate a target material with the desired spectral line emitting element.

一種LPP技術涉及產生目標材料小滴串流及運用一或多個雷射輻射脈衝輻照該等小滴中之至少一些。此等LPP源藉由將雷射能量耦合至具有至少一個EUV發射元件之目標材料中來產生EUV輻射,從而產生高度離子化電漿。One LPP technique involves generating a stream of droplets of target material and irradiating at least some of the droplets with one or more pulses of laser radiation. These LPP sources generate EUV radiation by coupling laser energy into a target material having at least one EUV emitting element, resulting in a highly ionized plasma.

對於此製程,通常在例如真空腔室之密封容器中產生電漿,且使用各種類型之度量衡設備來監測所得EUV輻射。除了產生EUV輻射以外,用以產生電漿之製程亦通常在電漿腔室中產生非所要的副產物,該等副產物可包括帶外輻射、高能量離子及碎屑,例如殘餘目標材料之原子及/或凝塊/微滴。For this process, a plasma is typically generated in a sealed container, such as a vacuum chamber, and the resulting EUV radiation is monitored using various types of metrology equipment. In addition to generating EUV radiation, processes used to generate plasma also typically generate unwanted by-products in the plasma chamber, which can include out-of-band radiation, high-energy ions, and debris such as residual target material. Atoms and/or clots/droplets.

高能輻射在所有方向上自電漿發射。在一個共同配置中,近正入射鏡面(常常被稱為「收集器鏡面」或簡言之「收集器」)經定位以收集、引導且(在一些配置中)聚焦輻射之至少一部分至中間位置。所收集輻射可接著自中間位置轉送至一組光學件、倍縮光罩、偵測器且最終轉送至矽晶圓。High-energy radiation is emitted from the plasma in all directions. In one common configuration, a near normal incidence mirror (often referred to as a "collector mirror" or simply a "collector") is positioned to collect, direct, and (in some configurations) focus at least a portion of the radiation to an intermediate location . The collected radiation can then be forwarded from the intermediate location to a set of optics, a reticle, a detector and finally to a silicon wafer.

在光譜之EUV部分中,通常認為有必要將反射光學件用於包括收集器、照明器及投影光學件箱之系統中的光學元件。此等反射光學件可被實施為如所提及之正入射光學件或實施為掠入射光學件。在所涉及之波長下,收集器被有利地實施為多層鏡面(「MLM」)。顧名思義,此MLM通常由基礎或基板上方之交替材料層(MLM堆疊)組成。系統光學件亦可經組態為經塗佈光學元件,即使其不實施為MLM亦如此。In the EUV portion of the spectrum, it is generally considered necessary to use reflective optics for optical elements in systems including collectors, illuminators, and projection optics boxes. Such reflective optics can be implemented as normal incidence optics as mentioned or as grazing incidence optics. At the wavelengths in question, the collector is advantageously implemented as a multilayer mirror ("MLM"). As the name suggests, this MLM typically consists of alternating layers of material (MLM stacks) over a base or substrate. System optics can also be configured as coated optical elements, even if they are not implemented as MLMs.

光學元件且特別是收集器必須置放於具有電漿之容器內以收集及重新引導EUV輻射。腔室內之環境對光學元件有害且因此(例如)藉由使反射率降級來限制其使用壽命。環境內之光學元件可曝光至目標材料之高能離子或粒子。基本上為來自雷射汽化製程之碎屑的目標材料之粒子可污染光學元件之曝光表面。目標材料之粒子亦可造成MLM表面之實體損壞及局部加熱。Optical elements and in particular collectors must be placed within the vessel with the plasma to collect and redirect EUV radiation. The environment within the chamber is detrimental to the optical element and thus limits its useful life, eg, by degrading reflectivity. Optical elements within the environment can be exposed to energetic ions or particles of the target material. Particles of the target material, essentially debris from the laser vaporization process, can contaminate the exposed surface of the optical element. Particles of the target material can also cause physical damage and localized heating of the MLM surface.

在一些系統中,處於在約0.5至約3毫巴之範圍內之壓力的H 2氣體作為緩衝氣體用於真空腔室中以用於碎屑減輕。在不存在氣體之情況下,在真空壓力下,將難以充分保護收集器免受自輻照區噴射之目標材料碎屑影響。氫氣對具有約13.5 nm之波長的EUV輻射相對透明,且因此較佳於其他候選氣體,諸如He、Ar或在約13.5 nm之波長下展現較高吸收率之其他氣體。 In some systems, H2 gas at a pressure in the range of about 0.5 to about 3 mbar is used as a buffer gas in the vacuum chamber for debris mitigation. In the absence of gas, under vacuum pressure, it would be difficult to adequately protect the collector from debris of the target material ejected from the irradiation zone. Hydrogen is relatively transparent to EUV radiation having a wavelength of about 13.5 nm, and is therefore preferred to other candidate gases, such as He, Ar, or other gases that exhibit higher absorption at wavelengths of about 13.5 nm.

H 2氣體被引入至真空腔室中以減緩由電漿產生之目標材料的高能碎屑(離子、原子及叢集)。碎屑藉由與氣體分子碰撞而減緩。出於此目的,使用亦可與碎屑軌跡相反且遠離收集器之H 2氣流。此用以減少收集器之光學塗層上之沈積、植入及濺鍍目標材料的損壞。 H2 gas is introduced into the vacuum chamber to slow down energetic debris (ions, atoms and clusters) of the target material produced by the plasma. Debris is slowed down by collisions with gas molecules. For this purpose, a flow of H 2 , which can also be opposed to the debris trajectory and away from the collector, is used. This is used to reduce damage to deposition, implantation and sputtering target materials on the optical coating of the collector.

因此,變換目標材料之製程產生粒子且將殘餘目標材料沈積於表面上,其中在輻照位點與表面之間以及在夾帶殘餘目標材料之氣體之排氣路徑中存在不受阻的路徑。舉例而言,若此氣體橫越存在於腔室中之葉片頂部被抽汲且抽汲至機械泵,則不久材料就會沈積於所有冷金屬部件上。若目標材料為錫,則此可導致錫絨生長,錫絨可降至收集器光學件上且堵塞排氣路徑。Thus, the process of transforming the target material produces particles and deposits residual target material on the surface, with an unobstructed path between the irradiation site and the surface and in the exhaust path of the gas that entrains the residual target material. For example, if this gas is drawn across the tops of the vanes present in the chamber and to a mechanical pump, material will soon be deposited on all cold metal parts. If the target material is tin, this can lead to the growth of tin wool that can fall onto the collector optics and block the exhaust path.

當運用雷射輻射來照明諸如錫之目標材料以產生電漿時,該目標材料之某一部分變成碎屑。舉例而言,目標材料碎屑可包括Sn蒸氣、SnH 4蒸氣、Sn原子、Sn離子、Sn叢集、Sn微粒、Sn奈米粒子及Sn沈積物。當Sn碎屑累積在EUV收集器上或EUV容器之一或多個內部容器壁上時,可減少EUV收集器效率、壽命及可用性。 When laser radiation is used to illuminate a target material, such as tin, to generate plasma, a portion of the target material becomes debris. For example, target material debris may include Sn vapor, SnH4 vapor, Sn atoms, Sn ions, Sn clusters, Sn particles, Sn nanoparticles, and Sn deposits. When Sn debris accumulates on the EUV collector or on one or more of the inner vessel walls of the EUV container, EUV collector efficiency, lifetime and availability can be reduced.

來自源容器之錫碎屑可自EUV源穿過中間焦點到達掃描器,此可導致例如掃描器中之照明器、壽命對於EUV系統生產率及擁有成本至關重要之昂貴光學元件的污染。如上文所描述,錫污染之一種形式為熔融錫自源容器中之中間焦點附近之壁的噴射或「噴出」。用以防止錫碎屑到達掃描器之一種技術涉及在中間焦點處應用動態氣鎖以抑制錫污染,如2017年3月28日發佈且標題為「Lithographic Apparatus and Method of Manufacturing a Device」之美國專利第9,606,445號中所揭示,該專利之全部內容特此係以引用方式併入。Tin chips from the source container can pass from the EUV source to the scanner through the intermediate focus, which can lead to contamination of, for example, the illuminator in the scanner, expensive optics whose lifetime is critical to EUV system productivity and cost of ownership. As described above, one form of tin contamination is the spray or "spray" of molten tin from the wall in the source vessel near the middle focal point. One technique used to prevent tin chips from reaching the scanner involves the application of a dynamic air lock at the intermediate focus to suppress tin contamination, as described in US Patent issued March 28, 2017 and titled "Lithographic Apparatus and Method of Manufacturing a Device" As disclosed in No. 9,606,445, which is hereby incorporated by reference in its entirety.

產生EUV光之製程亦可致使目標材料待沈積於容器之壁上。控制容器壁上之目標材料沈積對於達成置放於生產中之EUV源之可接受長壽命係重要的。又,管理來自輻照位點之目標材料通量對於確保廢棄目標材料減輕系統按預期工作係重要的。The process of generating EUV light can also cause the target material to be deposited on the walls of the container. Controlling target material deposition on the vessel walls is important to achieve acceptable longevity for EUV sources placed in production. Also, managing the flux of target material from the irradiation site is important to ensure that the waste target material mitigation system works as intended.

下文呈現一或多個實施例之概述以便提供對實施例之基本理解。此概述並非所有考慮實施例之廣泛綜述,且既不意欲識別所有實施例之關鍵或決定性要素,亦不意欲設定對任何或所有實施例之範疇之限制。其唯一目的為將一或多個實施例之一些概念以簡化形式呈現為稍後呈現之更詳細描述的序言。The following presents a summary of one or more embodiments in order to provide a basic understanding of the embodiments. This summary is not an extensive overview of all considered embodiments, and is neither intended to identify key or critical elements of all embodiments, nor to set limitations on the scope of any or all embodiments. Its sole purpose is to present some concepts of one or more embodiments in a simplified form as a prelude to the more detailed description that is presented later.

根據一實施例之一個態樣,揭示一種用於藉由允許至圍封一EUV源之腔室中之氣流之特性的動態改變而最佳化製程窗之系統。According to one aspect of an embodiment, a system for optimizing process windows by allowing dynamic changes in the characteristics of airflow into a chamber enclosing an EUV source is disclosed.

根據一實施例之另一態樣,揭示一種用於藉由一目標材料之小滴之雷射輻照而產生EUV輻射之裝置,該裝置包含:一容器;入口結構,其界定至少一個入口路徑,該至少一個入口路徑經調適及配置以將一氣體之一源連接至該容器之一內部,從而在沿著該入口路徑之一流中將該氣體添加至該容器;出口結構,其界定至少一個出口路徑,該至少一個出口路徑經調適及配置以連接至該容器之一內部以准許該容器中之氣體沿著該出口路徑自該容器流出;一可變流量調節器,其可選擇地配置於該入口路徑及該出口路徑中之一者中且經調適以至少部分地基於該裝置正操作之一模式而調節進入或離開該容器之該氣體之流動的一特性;及一控制器,其經配置以控制該流量控制器之操作。該控制器可經調適以使用一預看控制製程而操作。該裝置可進一步包含一第二可變流量調節器,該第二可變流量調節器可選擇地配置於該入口路徑及該出口路徑中之另一者中且該裝置可進一步包含一第二可變流量調節器,該第二可變流量調節器可選擇地配置於該入口路徑及該出口路徑中之另一者中且經調適以至少部分地基於該裝置正操作之一模式而調節進入或離開該容器之該氣體之該流動的一特性。According to another aspect of an embodiment, an apparatus for generating EUV radiation by laser irradiation of a droplet of a target material is disclosed, the apparatus comprising: a container; an inlet structure defining at least one inlet path , the at least one inlet path is adapted and configured to connect a source of a gas to an interior of the vessel to add the gas to the vessel in a flow along the inlet path; an outlet structure defining at least one an outlet path adapted and configured to connect to an interior of the vessel to permit gas in the vessel to flow out of the vessel along the outlet path; a variable flow regulator optionally configured at in one of the inlet path and the outlet path and adapted to adjust a characteristic of the flow of the gas into or out of the vessel based at least in part on a mode in which the device is operating; and a controller that is Configured to control the operation of this flow controller. The controller can be adapted to operate using a look-ahead control process. The apparatus may further comprise a second variable flow regulator selectively disposed in the other of the inlet path and the outlet path and the apparatus may further comprise a second variable flow regulator a variable flow regulator, the second variable flow regulator selectively configured in the other of the inlet path and the outlet path and adapted to regulate entry or A characteristic of the flow of the gas leaving the vessel.

該裝置可具有:一小滴上操作模式,其中小滴在該裝置處於一種模式中時在由一雷射輻照時產生EUV輻射;及一小滴外操作模式,其中該等小滴在另一模式中在未由一雷射輻照時不用以產生EUV輻射。該可變流量調節器可選擇地部分地或完全地配置於或根本不配置於該入口路徑中,且經調適以至少部分地基於該裝置正操作之該模式而調節進入該容器之該氣體之該流動的一特性。該特性可為流動速率、流動速度、流動剖面及流組成物中之任一者或組合。該流組成物可使得其在該小滴上模式期間不含有一活性氣體且在該小滴外模式期間含有一活性氣體。該活性氣體可包含氧氣。該入口結構可包含一收集器錐體。The device may have a droplet-on mode of operation, in which the droplets generate EUV radiation when irradiated by a laser while the device is in one mode; and a droplet-out mode of operation, in which the droplets are in another mode A mode is not used to generate EUV radiation when not irradiated by a laser. The variable flow regulator is selectively disposed partially or completely or not at all in the inlet path, and is adapted to adjust the amount of gas entering the vessel based at least in part on the mode in which the device is operating a characteristic of the flow. The characteristic can be any one or a combination of flow rate, flow velocity, flow profile, and flow composition. The flow composition may be such that it does not contain a reactive gas during the droplet up mode and contains a reactive gas during the droplet off mode. The reactive gas may contain oxygen. The inlet structure may include a collector cone.

該可變流量調節器可包含一流阻塞物及一馬達,該馬達機械地耦接至該流阻塞物且經調適以使該流阻塞物至少部分地移至該流動路徑中。此處及別處之「馬達」包括用於產生原動力之任何器件。該馬達可包含一線性馬達。該馬達可包含一螺線管。該流阻塞物在置放於該流動路徑中時可向該流呈現一實心橫截面或具有至少一個孔隙之一橫截面。該流阻塞物可具有一敞開管狀形狀,且當置放於該流動路徑中時經定向使得該流阻塞物重新引導該氣體之一部分。該流阻塞物可具有一空氣動力形狀。該可變流量調節器可包含一質量流量控制器。The variable flow regulator may include a flow obstruction and a motor mechanically coupled to the flow obstruction and adapted to move the flow obstruction at least partially into the flow path. "Motor" as used herein and elsewhere includes any device used to generate motive power. The motor may comprise a linear motor. The motor may include a solenoid. The flow obstruction may present a solid cross-section to the flow or a cross-section having at least one aperture when placed in the flow path. The flow obstruction may have an open tubular shape and be oriented such that the flow obstruction redirects a portion of the gas when placed in the flow path. The flow obstruction may have an aerodynamic shape. The variable flow regulator may include a mass flow controller.

該可變流量調節器可包含:一閥,其經調適以與該氣體源流體連通;及一歧管,其包含分別將該閥連接至該入口之複數個流體管道,該複數個流體管道中之每一者具有一各別流量限制器,該各別流量限制器將通過該各別管道之一流動速率限制至一各別值,該閥經配置以准許該氣體流經該複數個流動管道中之一者。The variable flow regulator may include: a valve adapted to be in fluid communication with the gas source; and a manifold including a plurality of fluid conduits respectively connecting the valve to the inlet, in the plurality of fluid conduits each has a respective flow restrictor that limits a flow rate through the respective conduit to a respective value, the valve is configured to permit the gas to flow through the plurality of flow conduits one of them.

根據一實施例之另一態樣,揭示一種用於藉由一目標材料之小滴之雷射輻照而產生EUV輻射之裝置,該裝置包含:一容器,其具有至少一個入口,該至少一個入口經調適以連接至一氣體之一源且在沿著一流動路徑之一流中將該氣體添加至該容器;一小滴產生器,其經配置以將該等小滴引入至該容器中到達該容器內之一輻照位點,其中該等小滴在該裝置處於一小滴上模式中時在由一雷射輻照時用以產生EUV輻射,且其中該等小滴在該裝置處於一小滴外模式中時在未由一雷射輻照時不用以產生EUV輻射;及一可變流量調節器,其可選擇地配置於該流動路徑中且經調適以至少部分地基於該裝置是處於該小滴上模式中抑或該小滴外模式中而調節進入該容器之該氣體之流動的一特性。According to another aspect of an embodiment, an apparatus for generating EUV radiation by laser irradiation of a droplet of a target material is disclosed, the apparatus comprising: a container having at least one inlet, the at least one The inlet is adapted to connect to a source of a gas and add the gas to the vessel in a flow along a flow path; a droplet generator configured to introduce the droplets into the vessel to reach an irradiation site within the container, wherein the droplets are used to generate EUV radiation when irradiated by a laser when the device is in droplet-on mode, and wherein the droplets are in a droplet outside mode not used to generate EUV radiation when not irradiated by a laser; and a variable flow regulator selectively disposed in the flow path and adapted to be based at least in part on the device A characteristic that regulates the flow of the gas into the vessel in either the droplet on mode or the droplet off mode.

根據一實施例之另一態樣,揭示一種用於調節自一氣體源進入用於產生EUV輻射之一裝置中之一容器的一氣體之流動的一特性之流量調節器,該流量調節器包含:一入口,其經調適以與該氣體源流體連通;一出口,其經調適以與至該容器之一入口流體連通;及一流量限制器,其至少部分地基於該裝置之一操作模式而可選擇地阻礙該氣體通過該調節器沿著自該入口至該出口之一流動路徑的一流動。該流量限制器可包含一流阻塞物及一馬達,該馬達機械地耦接至該流阻塞物且經調適以將該流阻塞物移動至完全在該流動路徑外、完全在該流動路徑內或部分在該流動路徑中之一位置。該流量限制器可包含:一閥,其經調適以與該氣體源流體連通;及一歧管,其包含分別將該閥連接至該入口之複數個流體管道,該複數個流體管道中之每一者具有一各別流量限制器,該各別流量限制器將通過該各別管道之一流動速率限制至一各別值,該閥經配置以准許該氣體流經該複數個流動管道中之一者。According to another aspect of an embodiment, a flow regulator for regulating a characteristic of the flow of a gas from a gas source into a container in a device for generating EUV radiation is disclosed, the flow regulator comprising : an inlet adapted to be in fluid communication with the gas source; an outlet adapted to be in fluid communication with an inlet to the vessel; and a flow restrictor based at least in part on an operating mode of the device A flow of the gas through the regulator along a flow path from the inlet to the outlet can be selectively blocked. The flow restrictor may include a flow obstruction and a motor mechanically coupled to the flow obstruction and adapted to move the flow obstruction fully outside, fully within, or partially within the flow path in one of the flow paths. The flow restrictor may include: a valve adapted to be in fluid communication with the gas source; and a manifold including a plurality of fluid conduits respectively connecting the valve to the inlet, each of the plurality of fluid conduits One has a respective flow restrictor that limits a flow rate through the respective conduit to a respective value, the valve configured to permit the gas to flow through one of the plurality of flow conduits one.

根據一實施例之另一態樣,揭示一種控制用於藉由一容器中之一目標材料之小滴之雷射輻照來產生EUV輻射的一裝置之操作之方法,該方法包含:在該等小滴不用以產生EUV輻射之一小滴外模式中操作該裝置;與該操作步驟一致,至少部分地基於該裝置在該小滴外模式中操作而調節進入及離開該容器中之至少一者的一氣體之一流動之一特性;切換至在該等小滴用以產生EUV輻射之一小滴上模式中操作該裝置;及與該切換步驟一致,至少部分地基於該裝置在該小滴上模式中操作而調節進入及離開該容器中之至少一者的一氣體之一流動之一特性。該方法可在根據一預看製程操作的一控制器之控制下進行。該特性可為流動速率、流動速度、流動剖面及流組成物中之任一者或組合。該流組成物可為在該小滴上模式期間不含有一活性氣體且在該小滴外模式期間含有一活性氣體的流組成物。該活性氣體可包含氧氣。該裝置可包含一流阻塞物及用於移動該流阻塞物之一馬達,且至少部分地基於該裝置在該小滴外模式中操作而調節進入該容器之一氣體之一流動的一特性的該步驟包含將該流阻塞物至少部分地移動至進入該容器之該氣體的一流動路徑中。該裝置可包含:一閥,其經調適以與該氣體之一源流體連通;及一歧管,其包含分別將該閥連接至該容器之複數個流體管道,該複數個流體管道中之每一者具有一各別流量限制器,該各別流量限制器將通過該各別管道之一流動速率限制至各別值,該閥經配置以准許該氣體流經該複數個流動管道中之一者,且至少部分地基於該裝置在該小滴外模式中操作而調節進入該容器之一氣體之一流動的一特性的該步驟包含操作該閥以將該複數個管道中之一所選擇管道置放成與該氣體之該源流體連通。According to another aspect of an embodiment, a method of controlling the operation of an apparatus for generating EUV radiation by laser irradiation of droplets of a target material in a container is disclosed, the method comprising: in the operating the device in an out-of-droplet mode that is not used to generate EUV radiation; consistent with the operating steps, regulating at least one of entering and leaving the vessel based at least in part on the device operating in the out-droplet mode a characteristic of a flow of a gas of the same; switching to operating the device in a droplet-up mode used by the droplets to generate EUV radiation; and consistent with the switching step, based at least in part on the device operating in the droplet A characteristic of a flow of a gas into and out of at least one of the container is adjusted by operating in the drop-on mode. The method may be carried out under the control of a controller operating according to a preview process. The characteristic can be any one or a combination of flow rate, flow velocity, flow profile, and flow composition. The flow composition may be a flow composition that does not contain a reactive gas during the droplet up mode and contains a reactive gas during the droplet off mode. The reactive gas may contain oxygen. The device may include a flow obstruction and a motor for moving the flow obstruction, and the device that regulates a characteristic of a flow of a gas into the vessel based at least in part on the device operating in the out-of-droplet mode Steps include moving the flow obstruction at least partially into a flow path of the gas entering the vessel. The device may comprise: a valve adapted to be in fluid communication with a source of the gas; and a manifold comprising a plurality of fluid conduits respectively connecting the valve to the vessel, each of the plurality of fluid conduits One has a respective flow restrictor that limits a flow rate through the respective conduit to respective values, the valve configured to permit the gas to flow through one of the plurality of flow conduits or, and the step of modulating a characteristic of a flow of a gas into the vessel based at least in part on the device operating in the out-of-droplet mode includes operating the valve to select a conduit of the one of the plurality of conduits is placed in fluid communication with the source of the gas.

下文參看隨附圖式來詳細地描述本發明之另外實施例、特徵及優點,以及各種實施例之結構及操作。Further embodiments, features and advantages of the present invention, as well as the structure and operation of various embodiments, are described in detail below with reference to the accompanying drawings.

現在參看圖式描述各種實施例,在該等圖式中類似元件符號始終用以係指類似元件。在以下描述中,出於解釋之目的,闡述許多特定細節以便增進對一或多個實施例之透徹理解。然而,在一些或所有情況下可明顯的是,可在不採用下文所描述之特定設計細節的情況下實踐下文所描述之任何實施例。在其他情況下,以方塊圖之形式展示熟知結構及器件以便促進對一或多個實施例之描述。Various embodiments are now described with reference to the drawings, wherein like reference numerals are used to refer to like elements throughout. In the following description, for purposes of explanation, numerous specific details are set forth in order to enhance a thorough understanding of one or more embodiments. It may be apparent, however, in some or all instances that any of the embodiments described below may be practiced without employing the specific design details described below. In other instances, well-known structures and devices are shown in block diagram form in order to facilitate the description of one or more embodiments.

然而,在更詳細地描述此類實施例之前,有指導性的是呈現可供實施本發明之實施例之實例環境。在下文之實施方式中及在申請專利範圍中,可使用術語「向上」、「向下」、「頂部」、「底部」、「豎直」、「水平」及類似術語。除非另外指定,否則此等術語僅意欲展示相對定向且不意欲展示相對於重力之任何定向。Before describing such embodiments in greater detail, however, it is instructive to present an example environment in which embodiments of the invention may be implemented. In the following embodiments and within the scope of the patent application, the terms "upward," "downward," "top," "bottom," "vertical," "horizontal," and similar terms may be used. Unless otherwise specified, these terms are only intended to show relative orientation and are not intended to show any orientation with respect to gravity.

最初參看圖1,其展示根據本發明之一實施例之一個態樣的例示性EUV輻射源(例如雷射產生電漿EUV輻射源10)的示意圖。如所展示,EUV輻射源10可包括脈衝式或連續雷射源22,該脈衝式或連續雷射源可例如為產生聚焦至主焦點PF的處於10.6 µm或1 µm之輻射光束12的脈衝式氣體放電CO 2雷射源。該脈衝式氣體放電CO 2雷射源可具有在高功率下及高脈衝重複率下操作之DC或RF激發。 Referring initially to FIG. 1, there is shown a schematic diagram of an exemplary EUV radiation source, such as a laser-generated plasma EUV radiation source 10, in accordance with one aspect of an embodiment of the present invention. As shown, EUV radiation source 10 may include a pulsed or continuous laser source 22, which may be, for example, a pulsed radiation beam 12 that produces a beam of radiation 12 at 10.6 μm or 1 μm focused to the main focus PF Gas discharge CO2 laser source. The pulsed gas discharge CO2 laser source can have DC or RF excitation operating at high power and high pulse repetition rate.

EUV輻射源10亦包括用於遞送呈液滴或連續液體串流之形式的目標材料之目標遞送系統24。在此實例中,目標材料為液體,但其亦可為固體或氣體。目標材料可由錫或錫化合物組成,但可使用其他材料。在所描繪之系統中,目標材料遞送系統24將目標材料之小滴14引入至真空腔室26之內部中直至收集器30之PF處之輻照區,在該輻照區中,目標材料可經輻照以產生電漿。真空腔室26可具備襯套。在一些狀況下,電荷被置放於目標材料上以准許使目標材料轉向朝向或遠離輻照區。應注意,如本文中所使用,輻照區為可發生或意欲發生目標材料輻照之區,且為甚至在實際上不發生輻照時之輻照區。EUV光源亦可包括光束轉向系統32。EUV radiation source 10 also includes a target delivery system 24 for delivering the target material in the form of droplets or a continuous stream of liquid. In this example, the target material is a liquid, but it could also be a solid or a gas. The target material may consist of tin or tin compounds, but other materials may be used. In the depicted system, target material delivery system 24 introduces droplets 14 of target material into the interior of vacuum chamber 26 up to the irradiation zone at the PF of collector 30, where the target material may be irradiated to generate plasma. The vacuum chamber 26 may be provided with a liner. In some cases, an electrical charge is placed on the target material to permit turning the target material toward or away from the irradiation area. It should be noted that, as used herein, an irradiation area is an area where irradiation of the target material can or is intended to occur, and is an irradiation area even when irradiation does not actually occur. The EUV light source may also include a beam steering system 32 .

在所展示之系統中,組件經配置使得小滴14實質上水平地行進。可將自雷射源22朝向輻照區之方向(亦即,光束12之標稱傳播方向)視為Z軸。可將小滴14自目標材料遞送系統24至輻照區所採取之路徑視為X軸。圖1之視圖因此垂直於XZ平面。使EUV輻射源10之定向較佳相對於如所展示之重力而旋轉,其中箭頭G展示相對於重力地向下之較佳定向。此定向適用於EUV源,但未必適用於光學下游組件,諸如掃描器及其類似者。又,雖然描繪了小滴14實質上水平地行進之系統,但一般熟習此項技術者應理解,可使用其他配置,在該等配置中小滴豎直地行進或相對於重力成90度(水平)與0度(豎直)之間(包括90度與0度)的某一角度行進。In the system shown, the components are configured such that the droplets 14 travel substantially horizontally. The direction from the laser source 22 toward the irradiation area (ie, the nominal propagation direction of the beam 12 ) can be considered as the Z-axis. The path taken by the droplets 14 from the target material delivery system 24 to the irradiation area can be considered as the X-axis. The view of Figure 1 is thus perpendicular to the XZ plane. The orientation of the EUV radiation source 10 is preferably rotated relative to gravity as shown, with arrow G showing a preferred orientation downward relative to gravity. This orientation applies to EUV sources, but not necessarily to optical downstream components, such as scanners and the like. Also, although a system is depicted in which the droplets 14 travel substantially horizontally, those of ordinary skill in the art will appreciate that other configurations may be used in which the droplets travel vertically or at 90 degrees relative to gravity (horizontal ) and 0 degrees (vertical) at an angle (including 90 and 0 degrees).

EUV輻射源10亦可包括EUV光源控制器系統60、雷射點火控制系統65以及光束轉向系統32。EUV輻射源10亦可包括諸如目標位置偵測系統之偵測器,該目標位置偵測系統可包括一或多個小滴成像器70,該一或多個小滴成像器產生指示目標小滴(例如)相對於輻照區之絕對或相對位置的輸出且將此輸出提供至目標位置偵測回饋系統62。EUV radiation source 10 may also include EUV light source controller system 60 , laser ignition control system 65 , and beam steering system 32 . EUV radiation source 10 may also include a detector such as a target position detection system, which may include one or more droplet imagers 70 that generate droplets indicative of the target For example, an output relative to the absolute or relative position of the irradiated region and this output is provided to the target position detection feedback system 62 .

如圖1中所展示,目標材料遞送系統24可包括目標遞送控制系統90。目標遞送控制系統90可回應於信號(例如,上文所描述之目標誤差,或自由系統控制器60提供之目標誤差導出之一些數量)而操作,以調整目標小滴14通過輻照區之路徑。此可例如藉由再定位目標遞送機構92釋放目標小滴14之點來實現。舉例而言,可藉由使目標遞送機構92傾斜或藉由側向地平移目標遞送機構92來再定位小滴釋放點。目標遞送機構92延伸至腔室26中且較佳在外部供應有目標材料及氣體源以在壓力下將目標材料置放於目標遞送機構92中。As shown in FIG. 1 , the target material delivery system 24 may include a target delivery control system 90 . The target delivery control system 90 may operate in response to a signal (eg, the target error described above, or some amount derived from the target error provided by the system controller 60) to adjust the path of the target droplet 14 through the irradiation area . This can be accomplished, for example, by repositioning the point at which the target delivery mechanism 92 releases the target droplet 14 . For example, the droplet release point can be repositioned by tilting the target delivery mechanism 92 or by translating the target delivery mechanism 92 laterally. The target delivery mechanism 92 extends into the chamber 26 and is preferably externally supplied with target material and a gas source to place the target material in the target delivery mechanism 92 under pressure.

繼續圖1,輻射源10亦可包括一或多個光學元件。在以下論述中,收集器30用作此類光學元件之實例,但該論述亦適用於其他光學元件。收集器30可為正入射反射器,例如經實施為具有沈積於每一界面處以有效地阻斷熱誘發之層間擴散的額外薄障壁層(例如B 4C、ZrC、Si 3N 4或C)之MLM。亦可使用其他基板材料,諸如鋁(Al)或矽(Si)。收集器30可呈長橢球之形式,其具有中心孔徑以允許雷射輻射12穿過並到達輻照區。收集器30可例如成橢球之形狀,其如所提及在輻照區處具有主焦點PF且在收集器30之光軸OA上具有中間焦點IF,其中可自EUV輻射源10輸出EUV輻射且將其輸入至例如積體電路微影掃描器50,該積體電路微影掃描器使用該輻射例如以已知方式使用倍縮光罩或遮罩54來處理矽晶圓工件52。接著另外以已知方式處理矽晶圓工件52以獲得積體電路器件。 Continuing with FIG. 1, radiation source 10 may also include one or more optical elements. In the following discussion, collector 30 is used as an example of such an optical element, but the discussion applies to other optical elements as well. Collector 30 may be a normal incidence reflector, eg implemented with an additional thin barrier layer (eg B4C , ZrC, Si3N4 or C ) deposited at each interface to effectively block thermally induced interlayer diffusion The MLM. Other substrate materials such as aluminum (Al) or silicon (Si) may also be used. The collector 30 may be in the form of a prolate spheroid with a central aperture to allow the laser radiation 12 to pass through and reach the irradiation area. The collector 30 may, for example, be in the shape of an ellipsoid, which as mentioned has a primary focus PF at the irradiation area and an intermediate focus IF on the optical axis OA of the collector 30, where EUV radiation may be output from the EUV radiation source 10 It is input, for example, to an IC lithography scanner 50, which uses the radiation to process a silicon wafer workpiece 52, for example, using a reticle or mask 54 in a known manner. The silicon wafer workpiece 52 is then additionally processed in a known manner to obtain integrated circuit devices.

圖2中之實線雙箭頭展示碎屑傳播之方向。輪廓箭頭展示H 2流之有利配置。出口42充當排氣通口,H 2經由其離開腔室26。箭頭G在一個實施例中指示重力方向。 The solid double arrows in Figure 2 show the direction of debris propagation. Contoured arrows show favorable configurations of H2 flow. Outlet 42 acts as an exhaust port through which H 2 exits chamber 26 . Arrow G indicates the direction of gravity in one embodiment.

圖3A為產生此類流之配置的示意性表示。如圖3A中所展示,氫氣通過定位於收集器30之中心孔徑中的錐形入口44 (錐形流)以及自腔室26之頂部自中間焦點IF附近的位置流入腔室26中。亦展示收集器30之主焦點PF在其光軸OA上之位置。氫氣流動遠離收集器30且流經出口42。自腔室26之頂部進入的氫氣亦流經出口42。圖3A中亦展示用於迫使氣體進入腔室26中之風扇模組46。可為風扇過濾器單元之風扇模組46通過管道56連接至氣體源48。另外,包括將氣體引入至容器中之複數個噴嘴的簇射頭可沿著內部容器壁之至少一部分而安置。參見2018年1月5日申請且在2018年7月12日公開的標題為「Guiding Device and Associated System」之國際申請公開案第WO 2018/127565號,該公開案之說明書之全文係以引用之方式併入本文中。Figure 3A is a schematic representation of a configuration for generating such a stream. As shown in FIG. 3A , the hydrogen gas flows into the chamber 26 through a conical inlet 44 (conical flow) positioned in the central aperture of the collector 30 and from the top of the chamber 26 from a location near the intermediate focus IF. The position of the principal focus PF of the collector 30 on its optical axis OA is also shown. Hydrogen flows away from collector 30 and through outlet 42 . Hydrogen entering from the top of chamber 26 also flows through outlet 42 . A fan module 46 for forcing gas into the chamber 26 is also shown in FIG. 3A. The fan module 46 , which may be a fan filter unit, is connected to the gas source 48 through the conduit 56 . Additionally, a shower head including a plurality of nozzles that introduce gas into the vessel may be positioned along at least a portion of the inner vessel wall. See International Application Publication No. WO 2018/127565, filed on January 5, 2018 and published on July 12, 2018, entitled "Guiding Device and Associated System", the entire specification of which is hereby incorporated by reference manner is incorporated herein.

如可瞭解,如以上行所描述之EUV源依賴於氫氣流以保護收集器、度量衡光學件及容器內表面免受目標材料碎屑影響。由於此類系統當前經組態,因此氫氣流動配方(包括例如對收集器錐形流、收集器周邊流、襯套上之簇射流等的流動速率之特定選擇)在配方在操作期間不改變的意義上係靜態的。As can be appreciated, the EUV source as described in the previous row relies on a flow of hydrogen gas to protect the collector, metrology optics and interior surfaces of the vessel from target material debris. Because such systems are currently configured, the hydrogen flow recipe (including, for example, specific selection of flow rates for collector cone flow, collector peripheral flow, shower jets on the liner, etc.) does not change during operation of the recipe It is static in the sense.

由於此情形,流動配方可能針對EUV功率之改變或曝光圖案之改變而未經最佳化。此可導致不合需要地小的製程窗。舉例而言,高收集器錐形流動速率可有益於收集器保護,以較佳克服自離開電漿之離子之動量轉移,且因此亦改良小滴/電漿穩定性。較高收集器錐形流動速率之不利方面為夾帶的錫超越排氣,從而導致容器內部之高沈積速率,此影響容器及收集器壽命。Due to this situation, the flow recipe may not be optimized for changes in EUV power or exposure pattern. This can result in an undesirably small process window. For example, high collector cone flow rates can be beneficial for collector protection to better overcome momentum transfer from ions exiting the plasma, and thus also improve droplet/plasma stability. A disadvantage of higher collector conical flow rates is that the entrained tin overtakes the outgassing, resulting in high deposition rates inside the vessel, which affects vessel and collector life.

靜態流動配方對於各向異性之離子分佈可變得尤其成問題。在此等狀況下,流動配方需要再平衡總流量以增加至收集器錐體之流量,從而保護收集器及容器壁免於過量錫沈積。所需錐形流可為高的,使得在不存在電漿(亦即,在小滴外)之情況下,流超越排氣(在此實例中為不對稱排氣)且再循環回至容器中,從而使得小滴不穩定。此為可不存在同時維持錫沈積低於可接受極限同時維持令人滿意的小滴穩定性之單一靜態製程窗的情形之實例。Static flow formulations can become particularly problematic for anisotropic ion distributions. Under these conditions, the flow recipe needs to rebalance the total flow to increase the flow to the collector cone, thereby protecting the collector and vessel walls from excessive tin deposition. The desired conical flow can be high so that in the absence of plasma (ie, outside the droplet), the flow overtakes the exhaust (asymmetric exhaust in this example) and recirculates back to the vessel , thereby making the droplet unstable. This is an example of a situation where there may not be a single static process window while maintaining tin deposition below acceptable limits while maintaining satisfactory droplet stability.

因此,根據一實施例之態樣,藉由基於特定使用案例變化氫氣流動速率來最佳化用於EUV源之製程窗。舉例而言,經考慮,對於一些未來應用,角度離子分佈對於一些電漿配方係相當各向異性的。可在當前及較高EUV功率位準下使用此等電漿配方。對於一些離子分佈,不存在滿足小滴上要求及小滴外要求兩者之製程窗。根據一實施例之一態樣,可使流動速率變化以最佳化製程窗。更特定言之,可使收集器錐形流變化。此可藉由使用快速致動節流元件以控制錐形流之速率來達成。Thus, according to one aspect of the embodiment, the process window for the EUV source is optimized by varying the hydrogen flow rate based on the particular use case. For example, it is contemplated that for some future applications, the angular ion distribution is rather anisotropic for some plasmonic formulations. These plasmonic formulations can be used at current and higher EUV power levels. For some ion distributions, there is no process window that meets both the droplet on and off droplet requirements. According to one aspect of an embodiment, the flow rate can be varied to optimize the process window. More specifically, the collector cone flow can be varied. This can be achieved by using a fast actuation throttle element to control the rate of the conical flow.

朝向收集器之增大之離子動量可需要流動之再平衡以滿足收集器及容器保護要求。特定言之,有可能需要增加之錐形流。然而,錐形流無法不受限制地增加,此係因為當電漿不存在時,例如在EUV曝光之前或之後,過量錐形流可導致再循環流及不穩定的小滴。Increased ion momentum towards the collector may require rebalancing of the flow to meet collector and vessel protection requirements. In particular, there may be a need for increased conical flow. However, the conical flow cannot be increased without limit, since excess conical flow can lead to recirculation flow and unstable droplets when plasma is not present, eg, before or after EUV exposure.

因此,基於可用之總氫氣流,藉由單一流動設定同時滿足小滴外小滴穩定性要求,同時亦滿足對容器及收集器上之錫沈積限制係不可能的。本質上,製程窗之中心基於電漿之存在或不存在而移位。根據一實施例之態樣,藉由將收集器錐形流設定在小滴外時動態調整為較低,而在小滴上時動態調整為較高來解決與移位製程窗問題相關聯的問題。用於錐形流中之任何此類調整之時間框需要大約為容器中的流動重定序時間標度。基於小滴推回量測,用於流動重定序之時間標度約為20 ms。因此,用於流量調速器之致動器亦必須能夠以至少相似的回應時間/頻寬操作。Therefore, based on the total hydrogen flow available, it is not possible to simultaneously satisfy the droplet-outside-droplet stability requirements with a single flow setting while also meeting the tin deposition limits on the vessel and collector. Essentially, the center of the process window is shifted based on the presence or absence of plasma. According to one aspect of the embodiment, the problem associated with the shifting process window is addressed by setting the collector cone flow to be dynamically adjusted lower when outside the droplet and higher when on the droplet question. The time frame for any such adjustment in cone flow needs to be approximately the flow resequencing time scale in the vessel. Based on droplet pushback measurements, the time scale for flow resequencing is approximately 20 ms. Therefore, actuators for flow governors must also be able to operate with at least similar response times/bandwidths.

現在參看圖3B,根據實施例之一個態樣,用於控制諸如進入腔室26及/或離開腔室26之氣體之流動速率及組成物之流動特性的配置可包括風扇模組46,該風扇模組包括諸如下文將結合圖4A、圖4B、圖5及圖6所描述之可變流量調節器。風扇模組46中之可變流量調節器在控制器47之控制下操作,該控制器可為專用硬體控制器或可為橫越若干組件分佈且由硬體及軟體兩者組成的控制系統。控制器47亦控制可控制混合閥64,該混合閥與第一氣體源48及第二氣體源49可控制地流體連通。可控制混合閥64可用以控制通過風扇模組46流入腔室26中之氣體的組成物。流入腔室26中之氣體之組成物可取決於系統之操作模式而改變。舉例而言,可存在一種類型之氣體,其可為在小滴上操作期間來自流入腔室26中之第一氣體源48的氣體之單一物種或兩種或多於兩種氣體之混合物,及在小滴外操作期間自第二氣體源49引入至腔室26中之第二類型之氣體。舉例而言,可在電漿產生期間產生非想要副作用的活性氣體(諸如氧氣)可被引入以切斷小滴操作以達成諸如收集器表面修復之目的。Referring now to FIG. 3B, according to one aspect of the embodiment, the configuration for controlling the flow rate and flow characteristics of the composition, such as the gas entering and/or exiting the chamber 26, may include a fan module 46 that The module includes a variable flow regulator such as will be described below in connection with FIGS. 4A , 4B, 5 and 6 . The variable flow regulator in fan module 46 operates under the control of controller 47, which may be a dedicated hardware controller or may be a control system distributed across several components and consisting of both hardware and software . The controller 47 also controls a controllable mixing valve 64 which is in controllable fluid communication with the first gas source 48 and the second gas source 49 . The controllable mixing valve 64 may be used to control the composition of the gas flowing into the chamber 26 through the fan module 46 . The composition of the gas flowing into chamber 26 may vary depending on the mode of operation of the system. For example, there may be one type of gas, which may be a single species of gas from the first gas source 48 flowing into the chamber 26 or a mixture of two or more gases during operation on the droplet, and A second type of gas is introduced into chamber 26 from second gas source 49 during out-of-droplet operation. For example, reactive gases, such as oxygen, which can produce undesired side effects during plasma generation, can be introduced to shut down droplet operation for purposes such as collector surface repair.

圖3B中亦展示定位於來自出口42中之一者的出口流動路徑中之排氣流量調節器66。排氣流量調節器66被展示為配置於出口流動路徑中之一者中,對於一般熟習此項技術者將顯而易見,排氣流量調節器66亦可置放於額外流出路徑中。排氣流量調節器66在控制器47之控制下操作以改變氣體通過出口通口42離開腔室26之速率。結構之可變流可例如用以拖曳容器壓力。舉例而言,容器壓力可在小滴上-小滴外轉變期間不合需要地變化。對排氣流量調節器66之控制可用以補償此壓力變化,且因此促成製程穩定性。Also shown in FIG. 3B is an exhaust flow modifier 66 positioned in the outlet flow path from one of the outlets 42 . The exhaust flow modifier 66 is shown disposed in one of the outlet flow paths, it will be apparent to those of ordinary skill in the art that the exhaust flow modifier 66 may also be placed in additional outflow paths. Exhaust flow regulator 66 operates under the control of controller 47 to vary the rate at which gas exits chamber 26 through outlet port 42 . The variable flow of the structure can be used, for example, to drag the vessel pressure. For example, vessel pressure can undesirably vary during the droplet on-droplet transition. Control of the exhaust flow regulator 66 can be used to compensate for this pressure variation and thus contribute to process stability.

又,一般而言,氫氣流經組態以用於EUV源在全功率下操作之使用案例。然而,可存在在小於全功率下操作源將有益的應用。在低劑量目標處,氣流受諸如錫之目標材料污染,但自離子之動量轉移不足以使錐形流充分減速,使得錐形流中之氣體排放至排氣中。因此,錫污染出現於排氣上方的容器中。此可藉由減少收集器錐形流來減輕。減小之收集器錐形流對於收集器保護而言係可接受的,此係因為來自離子之功率負載大大減小。當掃描器請求低劑量目標時,則可以自動化方式減少錐形流之流動設定。Also, in general, the hydrogen flow is configured for use cases where the EUV source operates at full power. However, there may be applications where operating the source at less than full power would be beneficial. At low dose targets, the gas flow is contaminated with target materials such as tin, but the momentum transfer from the ions is not sufficient to decelerate the cone sufficiently so that the gas in the cone discharges into the exhaust. Therefore, tin contamination occurs in the container above the exhaust gas. This can be mitigated by reducing the collector cone flow. The reduced collector cone flow is acceptable for collector protection because the power load from the ions is greatly reduced. When the scanner requests a low dose target, then the flow setting of the cone flow can be reduced in an automated fashion.

在一些狀況下,在小滴產生器起動及關機期間變化流量亦可具有潛在益處。橫越收集器之面之氣流(「傘狀流」)隨時間而變化以防止停滯區帶形成亦可為有用的。如所提及,除了控制流自身之量及掃掠以外,運用機械構件來修改流之形狀亦可能係有利的。In some cases, there may also be potential benefits to varying the flow during droplet generator startup and shutdown. It may also be useful for the airflow across the face of the collector ("umbrella flow") to vary over time to prevent stagnation zones from forming. As mentioned, in addition to controlling the volume and sweep of the flow itself, it may also be advantageous to use mechanical means to modify the shape of the flow.

如所提及,在小滴上操作(亦即,當產生電漿時之操作)期間,電漿以與阻礙氣流之實體元件相似的方式基本上表現為水流中之岩石,從而使流轉向且減小速度,尤其在羽流之中心處。為了控制此效應,可將呈例如機械流塊之形式的阻塞物移動至在收集器鏡面與容器之底部之間的錐形流之中心,而處於風扇過濾器單元(FFU)中之位置中。此機械塊可經建構以使得其不會太大而使得其無法使用已知技術(諸如,用以移動硬碟讀寫磁頭之線性馬達之類型)快速移動,不能夠在高達50至80 kHz之頻率下致動。具有磁頭的此類典型音圈線性馬達經額定至15至20毫秒之全範圍致動時間。企業工作馬達甚至更快。As mentioned, during operation on the droplet (ie, the operation when the plasma is generated), the plasma essentially behaves as a rock in the water flow in a similar manner to the physical elements that impede the flow, thereby diverting the flow and Reduce velocity, especially at the center of the plume. To control this effect, a blockage in the form of a mechanical flow block, for example, can be moved into the center of the conical flow between the collector mirror and the bottom of the container, in position in the fan filter unit (FFU). This mechanical block can be constructed so that it is not so large that it cannot be moved rapidly using known techniques (such as the type of linear motors used to move hard disk read/write heads), and cannot operate at frequencies up to 50 to 80 kHz. Actuation at frequency. Such typical voice coil linear motors with magnetic heads are rated for full range actuation times of 15 to 20 milliseconds. Enterprise work motors are even faster.

可將阻塞物及其支撐件之材料選擇及構造技術選擇為極輕的。支撐臂及塊體之壓花之最小值可使得其足夠堅硬以使得其在置放於錐形流中時將不會經受過度偏轉。The material selection and construction techniques of the block and its supports can be chosen to be extremely light. The minimum amount of embossing of the support arm and block can be such that it is stiff enough that it will not experience excessive deflection when placed in a conical flow.

阻塞物可具有多種形狀中之任一者。舉例而言,其可為實心的以便向流呈現實心面,且空氣動力成形以修整流之重新引導以達成所要結果。可使用流塊之額外形狀,諸如薄中空形狀塊體、具有中空中心之阻塞物及將流或流之部分轉向至特定位置之形狀。作為另一選項,膜片或刀口可用以限制在容器中或附近之流動。作為另一選項,流動速率可維持恆定,但可藉由改變流型(例如,自窄射流改變至較寬流)而修改氣體速度。The obstruction can have any of a variety of shapes. For example, it can be solid to present a solid face to the flow, and aerodynamically shaped to modify the redirection of the flow to achieve the desired result. Additional shapes of flow blocks can be used, such as thin hollow shaped blocks, blockages with hollow centers, and shapes that divert the flow or portions of the flow to specific locations. As another option, a membrane or knife edge can be used to restrict flow in or near the container. As another option, the flow rate can be maintained constant, but the gas velocity can be modified by changing the flow pattern (eg, from a narrow jet to a wider flow).

圖4A展示其中流阻塞物100被置放於將氣體饋送至收集器錐體44之流動路徑中的配置。阻塞物100可置放於風扇模組46中。阻塞物100係由臂110附接,該臂又附接至馬達120,該馬達可將阻塞物100移入及移出流動路徑。應理解,可使得阻塞物完全移離流動路徑、部分移動至流動路徑中或完全移動至流動路徑中。如此處及別處所使用,術語「馬達」用以意謂提供、賦予或產生運動之任何器件。在所展示之實例中,馬達120為音圈線性馬達。除了上文所描述之用於移動阻塞物100之機構之外,亦可使用用於將阻塞物100移入及移出錐形串流之其他機構,諸如螺線管、刷子及無刷馬達、氣動致動器、壓電元件及其類似者。此外,所有此類機構可藉由使用塊狀物、彈簧、阻尼器及比例、積分及微分(「PID」)參數來調諧以具有動態屬性,其增強了對於給定應用所需之頻率特定的回應時間及超越量。FIG. 4A shows a configuration in which a flow blocker 100 is placed in the flow path feeding gas to the collector cone 44 . The obstruction 100 may be placed in the fan module 46 . The obstruction 100 is attached by an arm 110, which in turn is attached to a motor 120 that can move the obstruction 100 into and out of the flow path. It will be appreciated that the blockage can be caused to move completely out of the flow path, partially into the flow path, or completely into the flow path. As used herein and elsewhere, the term "motor" is used to mean any device that provides, imparts, or produces motion. In the example shown, motor 120 is a voice coil linear motor. In addition to the mechanisms described above for moving the occlusion 100, other mechanisms for moving the occlusion 100 in and out of the conical flow can also be used, such as solenoids, brushes and brushless motors, pneumatic actuators actuators, piezoelectric elements and the like. Furthermore, all such mechanisms can be tuned to have dynamic properties through the use of blocks, springs, dampers, and proportional, integral, and derivative ("PID") parameters, which enhance the frequency-specific performance required for a given application. Response time and overrun.

圖4B展示一配置,其類似於圖4A中之配置,惟阻塞物100具有空氣動力形狀除外。圖5展示一配置,其類似於圖4A之配置,惟阻塞物100具有管狀形狀且經定向以便能夠將流引導至特定位置除外。阻塞物100亦可取決於特定使用案例而具有其他形狀。此類實施例可具有額外益處,此係因為其可用以以更有效方式減小或消除超越量而非僅使流轉向上。圖6展示其中質量流量控制器130用作可變流量調節器之配置。足夠快速的流量控制器可使用若干可能配置中之任一者來實施。作為一個實例,快速質量流量控制器(MFC)可置放為與其將在習知配置中之位置相比更接近源的位置。MFC係市售的,其具有低至25 ms之回應時間。Figure 4B shows a configuration similar to that in Figure 4A, except that the obstruction 100 has an aerodynamic shape. Figure 5 shows a configuration similar to that of Figure 4A, except that the obstruction 100 has a tubular shape and is oriented so as to be able to direct flow to a specific location. The obstruction 100 may also have other shapes depending on the particular use case. Such an embodiment may have additional benefits in that it may be used to reduce or eliminate the overshoot in a more efficient manner rather than just turning the flow upwards. Figure 6 shows a configuration in which mass flow controller 130 is used as a variable flow regulator. A sufficiently fast flow controller can be implemented using any of several possible configurations. As one example, a fast mass flow controller (MFC) may be placed closer to the source than it would be in conventional configurations. MFCs are commercially available with response times as low as 25 ms.

在另一配置中,流量控制係藉由在兩個或多於兩個預設孔口或流量限制器之間切換以在調變腔室流動速率之兩個或多於兩個流動速率之間快速轉變來達成。此多孔口配置可緊鄰容器置放以確保遞送至EUV體積之流的快速改變。圖7展示其中至腔室26之流藉由可選擇地連接至流量限制器170、180及190中之一者之切換閥150調節的配置。更特定言之,來自質量流量控制器160之氣體在管道56中流動至開關或閥150,該開關或閥將管道56選擇性地連接至歧管中之流量控制器170、180及190中之一者。閥150可在系統中之別處(例如,掃描器中)產生之信號的控制下操作。流量限制器170、180、190可有利地具有不同流阻抗。沿著管道200進入腔室26中之流動速率因此將取決於閥150將流量限制器中之哪一者連接至管道56。以此方式,流動速率可迅速地改變。在一替代性配置中,切換閥150可連接至單獨的氣體源,該等氣體源中之每一者係在不同壓力下。閥150將通過管道200將該等源中之一者選擇性地連接至腔室26。In another configuration, flow control is by switching between two or more preset orifices or flow restrictors to modulate between two or more of the chamber flow rates A quick turnaround is achieved. This orifice configuration can be placed in close proximity to the container to ensure rapid changes in flow delivered to the EUV volume. FIG. 7 shows a configuration in which flow to chamber 26 is regulated by switching valve 150 selectively connected to one of flow restrictors 170 , 180 and 190 . More specifically, gas from mass flow controller 160 flows in conduit 56 to switch or valve 150, which selectively connects conduit 56 to one of the flow controllers 170, 180, and 190 in the manifold one. Valve 150 may operate under the control of a signal generated elsewhere in the system (eg, in a scanner). The flow restrictors 170, 180, 190 may advantageously have different flow impedances. The flow rate along conduit 200 into chamber 26 will therefore depend on which of the flow restrictors valve 150 connects to conduit 56 . In this way, the flow rate can be changed rapidly. In an alternative configuration, the switching valve 150 may be connected to separate gas sources, each of which is at a different pressure. Valve 150 will selectively connect one of these sources to chamber 26 through conduit 200 .

因此,根據一實施例之態樣,時變之氫氣流動速率之使用可用以根據功率及/或曝光圖案之特定使用案例使錫管理效能、小滴穩定性及電漿穩定性之製程窗最佳化。在突發內使用時變之氫氣流以滿足錫管理效能、小滴穩定性及電漿穩定性之小滴上及小滴外製程窗要求兩者。定位於中心錐形流內部之機械流塊可用以修改用於小滴外時間之流以限制或消除腔室內部之小滴上與小滴外H 2流之間的差。該流塊亦可用以實體地重新引導中心錐形流之一部分以藉由修改模組內部之產生襯套流的額外流之方向及位置來增強襯套流之錫減輕效應。機械塊體可用以修改自中心錐體發散的流,以減少或消除在小滴上條件與小滴外條件之間的小滴不穩定性。機械流塊亦可用以減少或消除由小滴外目標材料流驅動至腔室中的錫之量。 Thus, according to one aspect of the embodiment, the use of time-varying hydrogen flow rates can be used to optimize process windows for tin management performance, droplet stability, and plasma stability based on the specific use case of power and/or exposure pattern change. A time-varying hydrogen flow was used within the burst to meet both droplet on- and off-droplet process window requirements for tin management performance, droplet stability, and plasma stability. A mechanical flow block positioned inside the central conical flow can be used to modify the flow for time outside the droplet to limit or eliminate the difference between the H2 flow on the droplet inside the chamber and outside the droplet. The flow block can also be used to physically redirect a portion of the central cone flow to enhance the tin mitigation effect of the liner flow by modifying the direction and location of the additional flow inside the module that produces the liner flow. Mechanical blocks can be used to modify the flow emanating from the central cone to reduce or eliminate droplet instability between on-droplet and off-droplet conditions. Mechanical flow blocks can also be used to reduce or eliminate the amount of tin driven into the chamber by the flow of target material outside the droplet.

圖8展示根據一實施例之態樣的製程,其中可在各向異性離子存在的情況下使用動態流量控制。該製程將以初始狀態S10開始,在該初始狀態中,源正在小滴外操作,亦即,不產生EUV電漿。在步驟S20中,可將錐形流設定為例如100 slm之值,其維持小滴之穩定性。在步驟S30中,起始EUV曝光,亦即,源開始在小滴上模式中操作。在可與步驟S30同時或甚至在步驟S30之前開始的步驟S40中,若系統正使用前饋控制,則將錐形流設定為並非為了小滴穩定性而最佳化,而是替代地用以最小化錫碎屑增積的值,例如120 slm。此操作繼續直至在步驟S50中停止EUV曝光為止。接著,在可與步驟S50同時或甚至在步驟S50中作出停止判定之前開始的步驟S60中,若系統正使用前饋控制,則將錐形流設定為為了小滴穩定性而最佳化而非最小化錫碎屑之增積的值。8 shows a process according to an aspect of an embodiment in which dynamic flow control may be used in the presence of anisotropic ions. The process will start with an initial state S10 in which the source is operating outside the droplet, ie, EUV plasma is not being produced. In step S20, the conical flow can be set to a value such as 100 slm, which maintains the stability of the droplets. In step S30, EUV exposure is initiated, ie the source begins to operate in droplet-on mode. In step S40, which may begin at the same time as step S30 or even before step S30, if the system is using feedforward control, the cone flow is set not to be optimized for droplet stability, but instead to A value that minimizes the build-up of tin chips, such as 120 slm. This operation continues until the EUV exposure is stopped in step S50. Next, in step S60, which may begin at the same time as step S50 or even before the stop decision is made in step S50, if the system is using feedforward control, the conical flow is set to optimize for droplet stability instead of The value that minimizes the build-up of tin chips.

圖9為展示用於取決於系統之操作模式而改變氣體組成物之製程的流程圖。應理解,圖9之製程可單獨使用或與結合圖8所描述之製程協同使用。在步驟S10中,藉由小滴外操作起始系統。在小滴外操作期間,在步驟S70中,流組成物經設定以包括諸如氧氣之活性氣體。此可為在小滴上操作期間將干涉電漿產生之氣體類型。在步驟S30中,判定系統是否切換至小滴上操作。若系統切換至小滴上操作,則在步驟S80中,將流組成物建立為不包括活性氣體之流組成物。在步驟S50中,判定系統是否切換回至小滴外操作。若否,則在步驟S60中維持不包括活性氣體的氣體組成物。否則,系統在步驟S10中回復至小滴外操作。9 is a flowchart showing a process for changing the gas composition depending on the operating mode of the system. It should be understood that the process of FIG. 9 may be used alone or in conjunction with the process described in connection with FIG. 8 . In step S10, start the system by operating outside the droplet. During out-of-droplet operation, in step S70, the flow composition is set to include a reactive gas such as oxygen. This may be the type of gas that will interfere with the plasma generation during operation on the droplet. In step S30, it is determined whether the system switches to the droplet operation. If the system switches to operating on droplets, in step S80, the flow composition is established as a flow composition that does not include reactive gas. In step S50, it is determined whether the system switches back to the out-of-droplet operation. If not, the gas composition that does not include active gas is maintained in step S60. Otherwise, the system reverts to the droplet out-of-drop operation in step S10.

以上描述主要就控制錐形流而言,但顯而易見的是,原理適用於控制通過其他入口進入腔室之氣體之流動。The above description has mainly been in terms of controlling conical flow, but it will be apparent that the principles apply to controlling the flow of gas into the chamber through other inlets.

實施例因此有可能提供若干益處,包括減少沈積於容器壁上之錫之量、減少沈積於收集器上之錫之量、增加用於電漿控制之製程窗之大小,及增加用於小滴穩定性之製程窗之大小。Embodiments thus have the potential to provide several benefits, including reducing the amount of tin deposited on the vessel walls, reducing the amount of tin deposited on the collector, increasing the size of the process window for plasma control, and increasing the amount of tin used for droplets The size of the process window for stability.

以上描述包括一或多個實施例之實例。當然,不可能出於描述前述實施例之目的而描述組件或方法之每一可想到的組合,但一般熟習此項技術者可認識到,各種實施例之許多其他組合及排列係可能的。因此,所描述之實施例意欲包涵屬於隨附申請專利範圍之精神及範疇的所有此等變更、修改及變化。此外,就術語「包括」用於實施方式或申請專利範圍中而言,此術語意欲以相似於術語「包含」在「包含」作為過渡詞用於技術方案中時所解譯之方式而為包括性的。此外,儘管所描述之態樣及/或實施例的元件可以單數形式來描述或主張,但除非明確陳述對單數之限制,否則亦考慮複數。另外,除非另有陳述,否則任何態樣及/或實施例之全部或一部分可結合任何其他態樣及/或實施例之全部或一部分加以利用。The above description includes examples of one or more embodiments. Of course, it is not possible to describe every conceivable combination of components or methods for purposes of describing the foregoing embodiments, but those of ordinary skill in the art will recognize that many other combinations and permutations of the various embodiments are possible. Accordingly, the described embodiments are intended to encompass all such changes, modifications and variations that fall within the spirit and scope of the appended claims. Furthermore, insofar as the term "comprising" is used in an embodiment or in the scope of a claim, this term is intended to be inclusive in a manner similar to how the term "comprising" is interpreted when "comprising" is used as a transition word in a technical solution sexual. Furthermore, although elements of the described aspects and/or embodiments may be described or claimed in the singular, the plural is contemplated unless limitation to the singular is explicitly stated. Additionally, all or a portion of any aspect and/or embodiment may be utilized in conjunction with all or a portion of any other aspect and/or embodiment, unless otherwise stated.

在以下編號條項中闡明本發明之其他態樣。 1.           一種用於藉由一目標材料之小滴之雷射輻照而產生EUV輻射之裝置,該裝置包含: 一容器; 一入口結構,其界定至少一個入口路徑,該至少一個入口路徑經調適及配置以將一氣體之一源連接至該容器之一內部,從而在沿著該入口路徑之一流中將該氣體添加至該容器; 一出口結構,其界定至少一個出口路徑,該至少一個出口路徑經調適及配置以連接至該容器之一內部以准許該容器中之氣體沿著該出口路徑自該容器流出; 一可變流量調節器,其可選擇地配置於該入口路徑及該出口路徑中之一者中且經調適以至少部分地基於該裝置正操作之一模式而調節進入或離開該容器之該氣體之流動的一特性;及 一控制器,其經配置以控制該流量控制器之操作。 2.           如條項1之裝置,其中該控制器經調適以使用一預看控制製程而操作。 3.           如條項1之裝置,其進一步包含一第二可變流量調節器,該第二可變流量調節器可選擇地配置於該入口路徑及該出口路徑中之另一者中且經調適以至少部分地基於該裝置正操作之一模式而調節進入或離開該容器之該氣體之該流動的一特性。 4.           如條項1之裝置,其中該裝置具有:一小滴上操作模式,其中小滴在該裝置處於一種模式中時在由一雷射輻照時產生EUV輻射;及一小滴外操作模式,其中該等小滴在另一模式中在未由一雷射輻照時不用以產生EUV輻射。 5.           如條項1之裝置,其中該可變流量調節器可選擇地配置於該入口路徑中且經調適以至少部分地基於該裝置正操作之該模式而調節進入該容器之該氣體之該流動的一特性。 6.           如條項5之裝置,其中該特性係一流動速率。 7.           如條項5之裝置,其中該特性係一流動速度。 8.           如條項5之裝置,其中該特性係一流動剖面。 9.           如條項5之裝置,其中該特性係一流組成物。 10.        如條項9之裝置,其進一步包含一混合閥、與該混合閥流體連通之一第一氣體源及與該混合閥流體連通之一第二氣體源,該混合閥經配置以與該入口結構流體連通且在該控制器之控制下操作以將該第一氣體、該第二氣體及該第一氣體與該第二氣體之一混合物中之一者提供至該入口結構。 11.        如條項9之裝置,其中該流組成物在該小滴上模式期間不含有一活性氣體且在該小滴外模式期間含有一活性氣體。 12.        如條項11之裝置,其中該活性氣體包含氧氣。 13.        如條項1之裝置,其中該入口結構包含一收集器錐體。 14.        如條項1之裝置,其中該可變流量調節器包含一流阻塞物及一馬達,該馬達機械地耦接至該流阻塞物且經調適以使該流阻塞物至少部分地移至該流動路徑中。 15.        如條項14之裝置,其中該馬達包含一線性馬達。 16.        如條項14之裝置,其中該馬達包含一螺線管。 17.        如條項14之裝置,其中該流阻塞物在置放於該流動路徑中時向該流呈現一實心橫截面。 18.        如條項14之裝置,其中該流阻塞物在置放於該流動路徑中時向該流呈現具有至少一個孔隙之一橫截面。 19.        如條項14之裝置,其中該流阻塞物具有一敞開管狀形狀,且當置放於該流動路徑中時經定向使得該流阻塞物重新引導該氣體之一部分。 20.        如條項14之裝置,其中該流阻塞物具有一空氣動力形狀。 21.        如條項1之裝置,其中該可變流量調節器包含一質量流量控制器。 22.        如條項1之裝置,其中該可變流量調節器包含 一閥,其經調適以與該氣體源流體連通,及 一歧管,其包含分別將該閥連接至該入口之複數個流體管道,該複數個流體管道中之每一者具有一各別流量限制器,該各別流量限制器將通過該各別管道之一流動速率限制至一各別值, 該閥經配置以准許該氣體流經該複數個流動管道中之一者。 23.        一種用於藉由一目標材料之小滴之雷射輻照而產生EUV輻射之裝置,該裝置包含: 一容器,其具有至少一個入口,該至少一個入口經調適以連接至一氣體之一源且在沿著一流動路徑之一流中將該氣體添加至該容器; 一小滴產生器,其經配置以將該等小滴引入至該容器中到達該容器內之一輻照位點,其中該等小滴在該裝置處於一小滴上模式中時在由一雷射輻照時用以產生EUV輻射,且其中該等小滴在該裝置處於一小滴外模式中時在未由一雷射輻照時不用以產生EUV輻射;及 一可變流量調節器,其可選擇地配置於該流動路徑中且經調適以至少部分地基於該裝置是處於該小滴上模式中抑或該小滴外模式中而調節進入該容器之該氣體之流動的一特性。 24.        一種用於調節自一氣體源進入用於產生EUV輻射之一裝置中之一容器的一氣體之流動的一特性之流量調節器,該流量調節器包含: 一入口,其經調適以與該氣體源流體連通; 一出口,其經調適以與至該容器之一入口流體連通;及 一流量限制器,其至少部分地基於該裝置之一操作模式而可選擇地阻礙該氣體通過該調節器沿著自該入口至該出口之一流動路徑的一流動。 25.        如條項24之流量調節器,其中該流量限制器包含一流阻塞物及一馬達,該馬達機械地耦接至該流阻塞物且經調適以將該流阻塞物移動至完全在該流動路徑外、完全在該流動路徑內或部分在該流動路徑中之一位置。 26.        如條項24之流量調節器,其中該流量限制器包含 一閥,其經調適以與該氣體源流體連通,及 一歧管,其包含分別將該閥連接至該入口之複數個流體管道,該複數個流體管道中之每一者具有一各別流量限制器,該各別流量限制器將通過該各別管道之一流動速率限制至各別值, 該閥經配置以准許該氣體流經該複數個流動管道中之一者。 27.        一種控制用於藉由一容器中之一目標材料之小滴之雷射輻照來產生EUV輻射的一裝置之操作之方法,該方法包含: 在該等小滴不用以產生EUV輻射之一小滴外模式中操作該裝置; 與該操作步驟一致,至少部分地基於該裝置在該小滴外模式中操作而調節進入及離開該容器中之至少一者的一氣體之一流動之一特性; 切換至在該等小滴用以產生EUV輻射之一小滴上模式中操作該裝置;及 與該切換步驟一致,至少部分地基於該裝置在該小滴上模式中操作而調節進入及離開該容器中之至少一者的一氣體之一流動之一特性。 28.        如條項27之方法,其中該方法係在根據一預看製程操作的一控制器之控制下進行。 29.        如條項27之方法,其中該特性係一流動速率。 30.        如條項27之方法,其中該特性係一流動速度。 31.        如條項27之方法,其中該特性係一流動剖面。 32.        如條項27之方法,其中該特性係一流組成物。 33.        如條項32之方法,其中該流組成物在該小滴上模式期間不含有一活性氣體且在該小滴外模式期間含有一活性氣體。 34.        如條項33之方法,其中該活性氣體包含氧氣。 35.        如條項27之方法,其中該裝置包含一流阻塞物及用於移動該流阻塞物之一馬達,且其中至少部分地基於該裝置在該小滴外模式中操作而調節進入該容器之一氣體之一流動的一特性的該步驟包含將該流阻塞物至少部分地移動至進入該容器之該氣體的一流動路徑中。 36.        如條項27之方法,其中該裝置包含:一閥,其經調適以與該氣體之一源流體連通;及一歧管,其包含分別將該閥連接至該容器之複數個流體管道,該複數個流體管道中之每一者具有一各別流量限制器,該各別流量限制器將通過該各別管道之一流動速率限制至各別值,該閥經配置以准許該氣體流經該複數個流動管道中之一者,且其中至少部分地基於該裝置在該小滴外模式中操作而調節進入該容器之一氣體之一流動的一特性的該步驟包含操作該閥以將該複數個管道中之一所選擇管道置放成與該氣體之該源流體連通。 Other aspects of the invention are set forth in the numbered clauses below. 1. A device for generating EUV radiation by laser irradiation of droplets of a target material, the device comprising: a container; An inlet structure defining at least one inlet path adapted and configured to connect a source of a gas to an interior of the vessel to add the gas in a flow along the inlet path to the container; an outlet structure defining at least one outlet path adapted and configured to connect to an interior of the container to permit gas in the container to flow out of the container along the outlet path; a variable flow regulator selectively disposed in one of the inlet path and the outlet path and adapted to regulate the gas entering or leaving the vessel based at least in part on a mode in which the device is operating a characteristic of the flow; and a controller configured to control the operation of the flow controller. 2. The apparatus of clause 1, wherein the controller is adapted to operate using a look-ahead control process. 3. The device of clause 1, further comprising a second variable flow regulator selectively disposed in the other of the inlet path and the outlet path and adapted to adjust a characteristic of the flow of the gas into or out of the vessel based at least in part on a mode in which the device is operating. 4. The device of clause 1, wherein the device has: a droplet-on mode of operation, wherein the droplet produces EUV radiation when irradiated by a laser when the device is in a mode; and a droplet-off-operating mode mode in which the droplets are not used to generate EUV radiation when not irradiated by a laser in another mode. 5. The device of clause 1, wherein the variable flow regulator is selectively disposed in the inlet path and adapted to regulate the amount of the gas entering the vessel based at least in part on the mode in which the device is operating A characteristic of flow. 6. The device of clause 5, wherein the characteristic is a flow rate. 7. The device of clause 5, wherein the characteristic is a flow velocity. 8. The device of clause 5, wherein the characteristic is a flow profile. 9. The device of clause 5, wherein the characteristic is a first-class composition. 10. The device of clause 9, further comprising a mixing valve, a first gas source in fluid communication with the mixing valve, and a second gas source in fluid communication with the mixing valve, the mixing valve configured to communicate with the mixing valve An inlet structure is in fluid communication and operates under the control of the controller to provide one of the first gas, the second gas and a mixture of the first gas and the second gas to the inlet structure. 11. The device of clause 9, wherein the flow composition does not contain a reactive gas during the droplet on mode and contains a reactive gas during the droplet off mode. 12. The device of clause 11, wherein the reactive gas comprises oxygen. 13. The device of clause 1, wherein the inlet structure comprises a collector cone. 14. The device of clause 1, wherein the variable flow regulator comprises a flow obstruction and a motor mechanically coupled to the flow obstruction and adapted to move the flow obstruction at least partially to the flow obstruction in the flow path. 15. The device of clause 14, wherein the motor comprises a linear motor. 16. The device of clause 14, wherein the motor comprises a solenoid. 17. The device of clause 14, wherein the flow obstruction presents a solid cross-section to the flow when placed in the flow path. 18. The device of clause 14, wherein the flow obstruction presents to the flow a cross-section having at least one aperture when placed in the flow path. 19. The device of clause 14, wherein the flow obstruction has an open tubular shape and is oriented such that the flow obstruction redirects a portion of the gas when placed in the flow path. 20. The device of clause 14, wherein the flow obstruction has an aerodynamic shape. 21. The device of clause 1, wherein the variable flow regulator comprises a mass flow controller. 22. The device of clause 1, wherein the variable flow regulator comprises a valve adapted to be in fluid communication with the gas source, and a manifold comprising a plurality of fluid conduits respectively connecting the valve to the inlet, each of the plurality of fluid conduits having a respective flow restrictor through which the respective flow restrictor will pass a flow rate limited to a respective value, The valve is configured to permit the gas to flow through one of the plurality of flow conduits. 23. A device for generating EUV radiation by laser irradiation of droplets of a target material, the device comprising: a vessel having at least one inlet adapted to connect to a source of a gas and add the gas to the vessel in a flow along a flow path; A droplet generator configured to introduce the droplets into the container to an irradiation site within the container, wherein the droplets are generated by a when irradiated by a laser to generate EUV radiation, and wherein the droplets are not used to generate EUV radiation when not irradiated by a laser when the device is in a droplet out-mode; and a variable flow regulator selectively disposed in the flow path and adapted to regulate the gas entering the vessel based at least in part on whether the device is in the droplet on mode or the droplet off mode a characteristic of the flow. 24. A flow regulator for regulating a characteristic of the flow of a gas from a gas source into a container in a device for generating EUV radiation, the flow regulator comprising: an inlet adapted to be in fluid communication with the gas source; an outlet adapted to be in fluid communication with an inlet to the container; and A flow restrictor that selectively blocks a flow of the gas through the regulator along a flow path from the inlet to the outlet based at least in part on an operating mode of the device. 25. The flow regulator of clause 24, wherein the flow restrictor comprises a flow obstruction and a motor mechanically coupled to the flow obstruction and adapted to move the flow obstruction fully within the flow One of the locations outside the path, entirely within the flow path, or partially within the flow path. 26. The flow regulator of clause 24, wherein the flow restrictor comprises a valve adapted to be in fluid communication with the gas source, and a manifold comprising a plurality of fluid conduits respectively connecting the valve to the inlet, each of the plurality of fluid conduits having a respective flow restrictor through which the respective flow restrictor will pass A flow rate is limited to the respective value, The valve is configured to permit the gas to flow through one of the plurality of flow conduits. 27. A method of controlling the operation of an apparatus for generating EUV radiation by laser irradiation of droplets of a target material in a container, the method comprising: operating the device in an out-droplet mode in which the droplets are not used to generate EUV radiation; Consistent with the operating steps, adjusting a characteristic of a flow of a gas into and out of at least one of the container based at least in part on the device operating in the out-of-droplet mode; switching to operating the device in a droplet-on mode in which the droplets are used to generate EUV radiation; and Consistent with the switching step, a characteristic of a flow of a gas into and out of at least one of the container is adjusted based at least in part on the device operating in the droplet-up mode. 28. The method of clause 27, wherein the method is performed under the control of a controller operating according to a preview process. 29. The method of clause 27, wherein the characteristic is a flow rate. 30. The method of clause 27, wherein the characteristic is a flow velocity. 31. The method of clause 27, wherein the characteristic is a flow profile. 32. The method of clause 27, wherein the property is a first-class composition. 33. The method of clause 32, wherein the flow composition does not contain a reactive gas during the droplet on mode and contains a reactive gas during the droplet off mode. 34. The method of clause 33, wherein the reactive gas comprises oxygen. 35. The method of clause 27, wherein the device comprises a flow blocker and a motor for moving the flow blocker, and wherein the flow into the container is adjusted based, at least in part, on the device operating in the extra-droplet mode. The step of a characteristic of a flow of a gas includes moving the flow obstruction at least partially into a flow path of the gas entering the vessel. 36. The method of clause 27, wherein the device comprises: a valve adapted to be in fluid communication with a source of the gas; and a manifold comprising a plurality of fluid conduits respectively connecting the valve to the vessel , each of the plurality of fluid conduits has a respective flow restrictor that limits a flow rate through the respective conduit to a respective value, the valve configured to permit the gas flow through one of the plurality of flow conduits, and wherein the step of adjusting a characteristic of a flow of a gas into the vessel based at least in part on the device operating in the out-of-droplet mode includes operating the valve to put A selected conduit of the plurality of conduits is placed in fluid communication with the source of the gas.

其他實施方案係在申請專利範圍之範疇內。Other embodiments are within the scope of the claims.

10:雷射產生電漿極紫外線(EUV)輻射源 12:光束 14:小滴 22:脈衝式或連續雷射源 24:目標遞送系統 26:真空腔室 30:收集器 32:光束轉向系統 42:出口/出口通口 44:錐形入口/收集器錐體 46:風扇模組 47:控制器 48:第一氣體源 49:第二氣體源 50:積體電路微影掃描器 52:矽晶圓工件 54:倍縮光罩或遮罩 56:管道 60:極紫外線(EUV)光源控制器系統 62:目標位置偵測回饋系統 64:可控制混合閥 65:雷射點火控制系統 66:排氣流量調節器 70:小滴成像器 90:目標遞送控制系統 92:目標遞送機構 100:阻塞物 110:臂 120:馬達 130:質量流量控制器 150:切換閥 160:質量流量控制器 170:流量限制器 180:流量限制器 190:流量限制器 G:箭頭/重力方向 IF:中間焦點 OA:光軸 PF:主焦點 S10:步驟 S20:步驟 S30:步驟 S40:步驟 S50:步驟 S60:步驟 S70:步驟 S80:步驟 S90:步驟 X:軸 Z:軸 10: Laser-generated plasma extreme ultraviolet (EUV) radiation source 12: Beam 14: Droplets 22: Pulsed or continuous laser source 24: Targeted Delivery Systems 26: Vacuum Chamber 30: Collector 32: Beam steering system 42: Exit/Exit port 44: Conical Inlet/Collector Cone 46: Fan module 47: Controller 48: First gas source 49: Second gas source 50: IC Lithography Scanner 52: Silicon Wafer Workpiece 54: Multiplier or mask 56: Pipes 60: Extreme Ultraviolet (EUV) Light Source Controller System 62: Target position detection feedback system 64: Controllable mixing valve 65: Laser ignition control system 66: Exhaust flow regulator 70: Droplet Imager 90: Target Delivery Control System 92: Target Delivery Agency 100: Obstruction 110: Arm 120: Motor 130: Mass flow controller 150: switch valve 160: Mass Flow Controller 170: Flow Limiter 180: Flow Limiter 190: Flow Limiter G: Arrow/Gravity Direction IF: Intermediate focus OA: Optical axis PF: Primary focus S10: Steps S20: Steps S30: Step S40: Steps S50: Steps S60: Steps S70: Steps S80: Steps S90: Steps X: axis Z: axis

圖1為根據一實施例之態樣的雷射產生電漿EUV輻射源系統之總體廣泛概念的示意性未按比例視圖。1 is a schematic, not-to-scale view of a general broad concept of a laser-generated plasma EUV radiation source system according to an aspect of an embodiment.

圖2為展示用於雷射產生電漿EUV輻射源系統中之容器及排氣系統之可能配置的未按比例圖式。2 is a not-to-scale diagram showing a possible configuration of a vessel and exhaust system for use in a laser-generated plasma EUV radiation source system.

圖3A為根據一實施例之態樣的用於將氣體引入至容器中之系統之可能配置的未按比例剖視示意圖。3A is a schematic, not-to-scale, cross-sectional schematic view of a possible configuration of a system for introducing gas into a vessel, according to an aspect of an embodiment.

圖3B為根據一實施例之態樣的用於控制氣體流入及/或流出容器之系統之可能配置的未按比例剖視示意圖。3B is a schematic, not-to-scale, cross-sectional schematic diagram of a possible configuration of a system for controlling the flow of gas into and/or out of a vessel, according to an aspect of an embodiment.

圖4A為根據一實施例之態樣的容器及氣體入口之可能配置的未按比例剖視示意圖。4A is a schematic, not-to-scale, cross-sectional view of a possible configuration of a container and gas inlet according to an aspect of an embodiment.

圖4B為根據一實施例之態樣的容器及氣體入口之可能配置的未按比例剖視示意圖。4B is a schematic, not-to-scale, cross-sectional view of a possible configuration of a container and gas inlet according to an aspect of an embodiment.

圖5為根據一實施例之態樣的容器及氣體入口之可能配置的未按比例剖視示意圖。5 is a schematic, not-to-scale, cross-sectional schematic view of a possible configuration of a container and gas inlet according to an aspect of an embodiment.

圖6為根據一實施例之態樣的容器及氣體入口之可能配置的未按比例剖視示意圖。6 is a schematic, not-to-scale, cross-sectional schematic view of a possible configuration of a container and gas inlet according to an aspect of an embodiment.

圖7為根據一實施例之態樣的用於將氣體引入至容器中之系統之可能配置的未按比例剖視示意圖。7 is a schematic, not-to-scale, cross-sectional schematic view of a possible configuration of a system for introducing gas into a container, according to an aspect of an embodiment.

圖8為根據一實施例之態樣的用於將氣體引入至容器中之製程的流程圖。8 is a flow diagram of a process for introducing gas into a vessel, according to an aspect of an embodiment.

圖9為根據一實施例之另一態樣的用於將氣體引入至容器中之製程的流程圖。9 is a flow diagram of a process for introducing gas into a vessel according to another aspect of an embodiment.

下文參看隨附圖式詳細地描述本發明之另外特徵及優點,以及本發明之各種實施例之結構及操作。應注意,本發明不限於本文所描述之特定實施例。本文中僅出於說明性目的而呈現此類實施例。基於本文中含有之教示,額外實施例對於熟習相關技術者而言將顯而易見。Additional features and advantages of the invention, as well as the structure and operation of various embodiments of the invention, are described in detail below with reference to the accompanying drawings. It should be noted that the present invention is not limited to the specific embodiments described herein. Such embodiments are presented herein for illustrative purposes only. Additional embodiments will be apparent to those skilled in the relevant art based on the teachings contained herein.

26:真空腔室 26: Vacuum Chamber

30:收集器 30: Collector

42:出口/出口通口 42: Exit/Exit port

44:錐形入口/收集器錐體 44: Conical Inlet/Collector Cone

46:風扇模組 46: Fan module

47:控制器 47: Controller

48:第一氣體源 48: First gas source

49:第二氣體源 49: Second gas source

56:管道 56: Pipes

64:可控制混合閥 64: Controllable mixing valve

66:排氣流量調節器 66: Exhaust flow regulator

IF:中間焦點 IF: Intermediate focus

OA:光軸 OA: Optical axis

PF:主焦點 PF: Primary focus

Claims (36)

一種用於藉由一目標材料之小滴之雷射輻照而產生EUV輻射之裝置,該裝置包含: 一容器; 一入口結構,其界定至少一個入口路徑,該至少一個入口路徑經調適及配置以將一氣體之一源連接至該容器之一內部,從而在沿著該入口路徑之一流中將該氣體添加至該容器; 一出口結構,其界定至少一個出口路徑,該至少一個出口路徑經調適及配置以連接至該容器之一內部以准許該容器中之氣體沿著該出口路徑自該容器流出; 一可變流量調節器,其可選擇地配置於該入口路徑及該出口路徑中之一者中且經調適以至少部分地基於該裝置正操作之一模式而調節進入或離開該容器之該氣體之流動的一特性;及 一控制器,其經配置以控制該流量控制器之操作。 A device for generating EUV radiation by laser irradiation of droplets of a target material, the device comprising: a container; An inlet structure defining at least one inlet path adapted and configured to connect a source of a gas to an interior of the vessel to add the gas in a flow along the inlet path to the container; an outlet structure defining at least one outlet path adapted and configured to connect to an interior of the container to permit gas in the container to flow out of the container along the outlet path; a variable flow regulator selectively disposed in one of the inlet path and the outlet path and adapted to regulate the gas entering or leaving the vessel based at least in part on a mode in which the device is operating a characteristic of the flow; and a controller configured to control the operation of the flow controller. 如請求項1之裝置,其中該控制器經調適以使用一預看控制製程而操作。The apparatus of claim 1, wherein the controller is adapted to operate using a look-ahead control process. 如請求項1之裝置,其進一步包含一第二可變流量調節器,該第二可變流量調節器可選擇地配置於該入口路徑及該出口路徑中之另一者中且經調適以至少部分地基於該裝置正操作之一模式而調節進入或離開該容器之該氣體之該流動的一特性。The apparatus of claim 1, further comprising a second variable flow regulator selectively disposed in the other of the inlet path and the outlet path and adapted to at least A characteristic of the flow of the gas entering or leaving the vessel is adjusted based in part on a mode in which the device is operating. 如請求項1之裝置,其中該裝置具有:一小滴上操作模式,其中小滴在該裝置處於一種模式中時在由一雷射輻照時產生EUV輻射;及一小滴外操作模式,其中該等小滴在另一模式中在未由一雷射輻照時不用以產生EUV輻射。The device of claim 1, wherein the device has: a droplet on mode of operation, wherein the droplet generates EUV radiation when irradiated by a laser when the device is in a mode; and a droplet off mode of operation, Wherein the droplets are not used to generate EUV radiation in another mode when not irradiated by a laser. 如請求項1之裝置,其中該可變流量調節器可選擇地配置於該入口路徑中且經調適以至少部分地基於該裝置正操作之該模式而調節進入該容器之該氣體之該流動的一特性。The device of claim 1, wherein the variable flow regulator is selectively disposed in the inlet path and adapted to regulate the flow of the gas into the vessel based at least in part on the mode in which the device is operating a feature. 如請求項5之裝置,其中該特性係一流動速率。The apparatus of claim 5, wherein the characteristic is a flow rate. 如請求項5之裝置,其中該特性係一流動速度。The apparatus of claim 5, wherein the characteristic is a flow velocity. 如請求項5之裝置,其中該特性係一流動剖面。The device of claim 5, wherein the characteristic is a flow profile. 如請求項5之裝置,其中該特性為一流組成物。The apparatus of claim 5, wherein the characteristic is a first-class composition. 如請求項9之裝置,其進一步包含一混合閥、與該混合閥流體連通之一第一氣體源及與該混合閥流體連通之一第二氣體源,該混合閥經配置以與該入口結構流體連通且在該控制器之控制下操作以將該第一氣體、該第二氣體及該第一氣體與該第二氣體之一混合物中之一者提供至該入口結構。The apparatus of claim 9, further comprising a mixing valve, a first gas source in fluid communication with the mixing valve, and a second gas source in fluid communication with the mixing valve, the mixing valve configured to communicate with the inlet structure in fluid communication and operating under the control of the controller to provide one of the first gas, the second gas and a mixture of the first gas and the second gas to the inlet structure. 如請求項9之裝置,其中該流組成物在該小滴上模式期間不含有一活性氣體且在該小滴外模式期間含有一活性氣體。9. The device of claim 9, wherein the flow composition does not contain a reactive gas during the droplet up mode and contains a reactive gas during the droplet off mode. 如請求項11之裝置,其中該活性氣體包含氧氣。The apparatus of claim 11, wherein the reactive gas comprises oxygen. 如請求項1之裝置,其中該入口結構包含一收集器錐體。The apparatus of claim 1, wherein the inlet structure includes a collector cone. 如請求項1之裝置,其中該可變流量調節器包含一流阻塞物及一馬達,該馬達機械地耦接至該流阻塞物且經調適以使該流阻塞物至少部分地移至該流動路徑中。The device of claim 1, wherein the variable flow regulator comprises a flow obstruction and a motor mechanically coupled to the flow obstruction and adapted to move the flow obstruction at least partially to the flow path middle. 如請求項14之裝置,其中該馬達包含一線性馬達。The apparatus of claim 14, wherein the motor comprises a linear motor. 如請求項14之裝置,其中該馬達包含一螺線管。The apparatus of claim 14, wherein the motor includes a solenoid. 如請求項14之裝置,其中該流阻塞物在置放於該流動路徑中時向該流呈現一實心橫截面。The device of claim 14, wherein the flow obstruction presents a solid cross-section to the flow when placed in the flow path. 如請求項14之裝置,其中該流阻塞物在置放於該流動路徑中時向該流呈現具有至少一個孔隙之一橫截面。14. The device of claim 14, wherein the flow obstruction presents a cross-section with at least one aperture to the flow when placed in the flow path. 如請求項14之裝置,其中該流阻塞物具有一敞開管狀形狀,且當置放於該流動路徑中時經定向使得該流阻塞物重新引導該氣體之一部分。The device of claim 14, wherein the flow obstruction has an open tubular shape and is oriented such that the flow obstruction redirects a portion of the gas when placed in the flow path. 如請求項14之裝置,其中該流阻塞物具有一空氣動力形狀。The device of claim 14, wherein the flow obstruction has an aerodynamic shape. 如請求項1之裝置,其中該可變流量調節器包含一質量流量控制器。The apparatus of claim 1, wherein the variable flow regulator comprises a mass flow controller. 如請求項1之裝置,其中該可變流量調節器包含 一閥,其經調適以與該氣體源流體連通,及 一歧管,其包含分別將該閥連接至該入口之複數個流體管道,該複數個流體管道中之每一者具有一各別流量限制器,該各別流量限制器將通過該各別管道之一流動速率限制至一各別值, 該閥經配置以准許該氣體流經該複數個流動管道中之一者。 The apparatus of claim 1, wherein the variable flow regulator comprises a valve adapted to be in fluid communication with the gas source, and a manifold comprising a plurality of fluid conduits respectively connecting the valve to the inlet, each of the plurality of fluid conduits having a respective flow restrictor through which the respective flow restrictor will pass a flow rate limited to a respective value, The valve is configured to permit the gas to flow through one of the plurality of flow conduits. 一種用於藉由一目標材料之小滴之雷射輻照而產生EUV輻射之裝置,該裝置包含: 一容器,其具有至少一個入口,該至少一個入口經調適以連接至一氣體之一源且在沿著一流動路徑之一流中將該氣體添加至該容器; 一小滴產生器,其經配置以將該等小滴引入至該容器中到達該容器內之一輻照位點,其中該等小滴在該裝置處於一小滴上模式中時在由一雷射輻照時用以產生EUV輻射,且其中該等小滴在該裝置處於一小滴外模式中時在未由一雷射輻照時不用以產生EUV輻射;及 一可變流量調節器,其可選擇地配置於該流動路徑中且經調適以至少部分地基於該裝置是處於該小滴上模式中抑或該小滴外模式中而調節進入該容器之該氣體之流動的一特性。 A device for generating EUV radiation by laser irradiation of droplets of a target material, the device comprising: a vessel having at least one inlet adapted to connect to a source of a gas and add the gas to the vessel in a flow along a flow path; A droplet generator configured to introduce the droplets into the container to an irradiation site within the container, wherein the droplets are generated by a droplet while the device is in a droplet-on mode. when irradiated by a laser to generate EUV radiation, and wherein the droplets are not used to generate EUV radiation when not irradiated by a laser when the device is in a droplet out-mode; and a variable flow regulator selectively disposed in the flow path and adapted to regulate the gas entering the vessel based at least in part on whether the device is in the droplet on mode or the droplet off mode a characteristic of the flow. 一種用於調節自一氣體源進入用於產生EUV輻射之一裝置中之一容器的一氣體之流動的一特性之流量調節器,該流量調節器包含: 一入口,其經調適以與該氣體源流體連通; 一出口,其經調適以與至該容器之一入口流體連通;及 一流量限制器,其至少部分地基於該裝置之一操作模式而可選擇地阻礙該氣體通過該調節器沿著自該入口至該出口之一流動路徑的一流動。 A flow regulator for regulating a characteristic of the flow of a gas from a gas source into a container in a device for generating EUV radiation, the flow regulator comprising: an inlet adapted to be in fluid communication with the gas source; an outlet adapted to be in fluid communication with an inlet to the container; and A flow restrictor that selectively blocks a flow of the gas through the regulator along a flow path from the inlet to the outlet based at least in part on an operating mode of the device. 如請求項24之流量調節器,其中該流量限制器包含一流阻塞物及一馬達,該馬達機械地耦接至該流阻塞物且經調適以將該流阻塞物移動至完全在該流動路徑外、完全在該流動路徑內或部分在該流動路徑中之一位置。The flow regulator of claim 24, wherein the flow restrictor comprises a flow obstruction and a motor mechanically coupled to the flow obstruction and adapted to move the flow obstruction completely out of the flow path , either completely within the flow path or partially within the flow path. 如請求項24之流量調節器,其中該流量限制器包含 一閥,其經調適以與該氣體源流體連通,及 一歧管,其包含分別將該閥連接至該入口之複數個流體管道,該複數個流體管道中之每一者具有一各別流量限制器,該各別流量限制器將通過該各別管道之一流動速率限制至各別值, 該閥經配置以准許該氣體流經該複數個流動管道中之一者。 The flow regulator of claim 24, wherein the flow limiter comprises a valve adapted to be in fluid communication with the gas source, and a manifold comprising a plurality of fluid conduits respectively connecting the valve to the inlet, each of the plurality of fluid conduits having a respective flow restrictor through which the respective flow restrictor will pass one flow rate is limited to the respective value, The valve is configured to permit the gas to flow through one of the plurality of flow conduits. 一種控制用於藉由一容器中之一目標材料之小滴之雷射輻照來產生EUV輻射的一裝置之操作之方法,該方法包含: 在該等小滴不用以產生EUV輻射之一小滴外模式中操作該裝置; 與該操作步驟一致,至少部分地基於該裝置在該小滴外模式中操作而調節進入及離開該容器中之至少一者的一氣體之一流動之一特性; 切換至在該等小滴用以產生EUV輻射之一小滴上模式中操作該裝置;及 與該切換步驟一致,至少部分地基於該裝置在該小滴上模式中操作而調節進入及離開該容器中之至少一者的一氣體之一流動之一特性。 A method of controlling the operation of an apparatus for generating EUV radiation by laser irradiation of droplets of a target material in a container, the method comprising: operating the device in an out-droplet mode in which the droplets are not used to generate EUV radiation; Consistent with the operating steps, adjusting a characteristic of a flow of a gas into and out of at least one of the container based at least in part on the device operating in the out-of-droplet mode; switching to operating the device in a droplet-on mode in which the droplets are used to generate EUV radiation; and Consistent with the switching step, a characteristic of a flow of a gas into and out of at least one of the container is adjusted based at least in part on the device operating in the droplet-up mode. 如請求項27之方法,其中該方法係在根據一預看製程操作的一控制器之控制下進行。The method of claim 27, wherein the method is performed under the control of a controller operating in accordance with a preview process. 如請求項27之方法,其中該特性係一流動速率。The method of claim 27, wherein the characteristic is a flow rate. 如請求項27之方法,其中該特性係一流動速度。The method of claim 27, wherein the characteristic is a flow velocity. 如請求項27之方法,其中該特性係一流動剖面。The method of claim 27, wherein the characteristic is a flow profile. 如請求項27之方法,其中該特性係一流組成物。The method of claim 27, wherein the property is a first-rate composition. 如請求項32之方法,其中該流組成物在該小滴上模式期間不含有一活性氣體且在該小滴外模式期間含有一活性氣體。The method of claim 32, wherein the flow composition does not contain a reactive gas during the droplet up mode and contains a reactive gas during the droplet off mode. 如請求項33之方法,其中該活性氣體包含氧氣。The method of claim 33, wherein the reactive gas comprises oxygen. 如請求項27之方法,其中該裝置包含一流阻塞物及用於移動該流阻塞物之一馬達,且其中至少部分地基於該裝置在該小滴外模式中操作而調節進入該容器之一氣體之一流動的一特性的該步驟包含將該流阻塞物至少部分地移動至進入該容器之該氣體的一流動路徑中。The method of claim 27, wherein the device comprises a flow obstruction and a motor for moving the flow obstruction, and wherein a gas entering the container is regulated based at least in part on the device operating in the out-of-droplet mode The step of a characteristic of a flow includes moving the flow obstruction at least partially into a flow path of the gas entering the vessel. 如請求項27之方法,其中該裝置包含:一閥,其經調適以與該氣體之一源流體連通;及一歧管,其包含分別將該閥連接至該容器之複數個流體管道,該複數個流體管道中之每一者具有一各別流量限制器,該各別流量限制器將通過該各別管道之一流動速率限制至各別值,該閥經配置以准許該氣體流經該複數個流動管道中之一者,且其中至少部分地基於該裝置在該小滴外模式中操作而調節進入該容器之一氣體之一流動的一特性的該步驟包含操作該閥以將該複數個管道中之一所選擇管道置放成與該氣體之該源流體連通。The method of claim 27, wherein the device comprises: a valve adapted to be in fluid communication with a source of the gas; and a manifold comprising a plurality of fluid conduits respectively connecting the valve to the vessel, the Each of the plurality of fluid conduits has a respective flow restrictor that limits a flow rate through the respective conduit to a respective value, the valve configured to permit the gas to flow through the respective conduit one of a plurality of flow conduits, and wherein the step of adjusting a characteristic of a flow of a gas into the vessel based at least in part on the device operating in the out-of-droplet mode comprises operating the valve to the plurality of A selected one of the conduits is placed in fluid communication with the source of the gas.
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