TW202215638A - Switching component and electronic device - Google Patents

Abstract

A switching component and electronic device are disclosed. The switching element comprises a semiconductor substrate, a source, a drain, a gate insulating layer, a first capacitor plate and a second capacitor plate; the first side of the semiconductor substrate is provided with a grid area, a source area, and a drain area, wherein the source area and the drain area are set respectively on either side of the grid area; the conductive type of the source area and the drain area is different from that of the grid area. The source is set on the source area, the drain is set on the drain area, the gate insulating layer is set on the gate area, and the first capacitor plate set on the gate insulating layer. The second capacitor plate is set in parallel with the first capacitor plate. Thus, by changing the distance between the first capacitor plate and the second capacitor plate, the on/off state of switch element can be controlled, thereby the stroke of switch element is shorter, and the switch element do not need to be exposed on the surface of device, which can improve the surface integrity, waterproof and dustproof performance of electronic device. Furthermore, the switch component has advantages of simple structure, smaller volume, and easy operation.

Description

Switching elements and electronics

The present invention relates to the technical field of switches, in particular to a switch element and an electronic device.

A switch is an electronic component used to control the on-off of a circuit. Switches are often set in electronic devices for users to press to control the on-off state of related circuits, so as to turn on and off the electronic devices or enable the electronic devices to achieve corresponding functions. The traditional key switch needs to be pressed and moved for a large stroke to be triggered, so it is necessary to open a hole in the casing of the electronic device, so that the key is exposed to the casing for the user to press, and the gap between the key switch and the casing allows water and dust to enter Inside the electronic equipment, it is not conducive to the stable operation of the electronic equipment and reduces the service life of the electronic equipment.

The invention provides a switch element and an electronic device, which can solve the problem that the existing switch needs to be arranged on the surface of the device.

In a first aspect, an embodiment of the present invention provides a switching element, including a semiconductor substrate, a source electrode, a drain electrode, a gate insulating layer, a first capacitor plate and a second capacitor plate; the first surface of the semiconductor substrate It has a gate region and a source region and a drain region respectively arranged on both sides of the gate region, and the conductivity type of the source region and the drain region is different from that of the gate region; the source is arranged on the the source region; the drain is arranged on the drain region; the gate insulating layer is arranged on the gate region; the first capacitor plate is arranged on the gate insulating layer; the second capacitor plate and the The first capacitor plates are arranged in parallel and opposite to each other.

In some embodiments, the conductivity type of the source region and the drain region is N-type, and the conductivity type of the gate region is P-type.

In some embodiments, the switch element further includes a capacitor dielectric layer disposed between the first capacitor plate and the second capacitor plate.

In some embodiments, the gate insulating layer also partially covers the source region and the drain region, and the projection of the first capacitor plate on the first surface of the semiconductor substrate is the same as the source region and the drain region The polar regions have overlapping regions.

In a second aspect, an embodiment of the present invention further provides an electronic device, the electronic device includes a casing and a working circuit disposed in the casing, the working circuit includes a switching element, a power management circuit and a driving circuit; the power management circuit is connected to The switching element is electrically connected, and the power management circuit is configured to control the input and/or output state of the power supply according to the on-off state of the switching element; wherein the switching element comprises a semiconductor substrate, a source electrode, a drain electrode, and a gate insulation layer, a first capacitor plate and a second capacitor plate; the first surface of the semiconductor substrate has a gate region and a source region and a drain region respectively arranged on both sides of the gate region, the source region and The conductivity type of the drain region is different from that of the gate region; the source is arranged in the source region, and the source is electrically connected to the power management circuit; the drain is arranged in the drain region, the drain The gate electrode is electrically connected to the power management circuit; the gate insulating layer is arranged on the gate region; the first capacitor electrode plate is arranged on the gate insulating layer; the second capacitor electrode plate is connected to the first capacitor electrode plate Parallel and oppositely arranged, the second capacitor plate is connected to the inner wall of the casing; wherein, the drive circuit is electrically connected with the first capacitor plate and the second capacitor plate to connect the first capacitor plate and the second capacitor plate. The second capacitor plate applies a voltage.

In some embodiments, the conductivity type of the source region and the drain region is N-type, the conductivity type of the gate region is P-type, and the driving circuit is configured to connect the first capacitor plate and the power supply. Positive electrical connection.

In some embodiments, the switch element further includes a capacitor dielectric layer disposed between the first capacitor plate and the second capacitor plate.

In some embodiments, the gate insulating layer also partially covers the source region and the drain region, and the projection of the first capacitor plate on the first surface of the semiconductor substrate is the same as the source region and the drain region The polar regions have overlapping regions.

In some embodiments, the electronic device further includes a power supply disposed in the housing, and the power supply is electrically connected to the power management circuit and the driving circuit.

In some embodiments, the electronic device is a charging box for charging the product to be charged; the housing includes a box body and a box cover, the box body includes a top wall, a bottom wall and a side wall connecting the top wall and the bottom wall , the top wall, the bottom wall and the side wall are connected to form a cavity, the switch element is arranged in the cavity, the second capacitor plate is connected with the inner wall of the side wall, and the outer surface of the top wall has an accommodating groove, The accommodating slot is used for accommodating the product to be charged, and the box cover is opposite to the accommodating slot; the power management circuit is configured to control the power supply to output electric energy to the product to be charged according to the on-off state of the switch element.

Embodiments of the present invention provide a switching element and an electronic device. The switching element includes a semiconductor substrate, a source electrode, a drain electrode, a gate insulating layer, a first capacitor plate and a second capacitor plate; the first surface of the semiconductor substrate It has a gate region and a source region and a drain region respectively arranged on both sides of the gate region. The conductivity type of the source region and the drain region is different from that of the gate region, the source is arranged in the source region, and the drain The electrode is arranged on the drain region, the gate insulating layer is arranged on the gate region, the first capacitor electrode plate is arranged on the gate insulating layer, and the second capacitor electrode plate is arranged in parallel and opposite to the first capacitor electrode plate. Therefore, by changing the distance between the first capacitor plate and the second capacitor plate, the on-off of the switch element can be controlled, the travel of the switch element is short, and it is not necessary to expose the surface of the device, which can improve the integrity of the appearance of the electronic device. The utility model is beneficial to the waterproof and dustproof of the electronic equipment, and meanwhile, the switch element has a simple structure, a small volume, and is convenient for the user to operate.

The present invention is described below based on examples, but the present invention is not limited to these examples only. In the following detailed description of the invention, some specific details are described in detail. The present invention can be fully understood by those skilled in the art without these detailed descriptions. In order to avoid obscuring the essence of the present invention, well-known methods, procedures, procedures, components and circuits have not been described in detail.

Furthermore, those of ordinary skill in the art should understand that the drawings provided herein are for illustrative purposes and are not necessarily drawn to scale.

Unless the context clearly requires, words such as "including", "comprising" and the like in the specification should be construed in an inclusive rather than an exclusive or exhaustive sense; that is, in the sense of "including but not limited to".

In the description of the present invention, it should be understood that the terms "first", "second", etc. are used for descriptive purposes only, and should not be construed as indicating or implying relative importance. Also, in the description of the present invention, unless otherwise specified, the meaning of "plurality" is two or more.

FIG. 1 and FIG. 2 are schematic structural diagrams of two different switching elements according to an embodiment of the present invention.

1 and 2 , the switching element 100 according to the embodiment of the present invention includes a semiconductor substrate 110 , a source electrode 120 , a drain electrode 130 , a gate insulating layer 140 , a first capacitor plate 150 and a second capacitor plate 160 . The first surface of the semiconductor substrate 110 has a gate region 111 , and a source region 112 and a drain region 113 respectively disposed on both sides of the gate region 111 . The source electrode 120 is provided on the source electrode region 112 , and the drain electrode 130 is provided on the drain electrode region 113 . The gate insulating layer 140 is disposed on the gate region 111 , the first capacitor plate 150 is disposed on the gate insulating layer 140 , and the gate insulating layer 140 is used to electrically insulate the gate region 111 and the first capacitor plate 150 . The second capacitor electrode plate 160 is substantially parallel to the first capacitor electrode plate 150 , and the second capacitor electrode plate 160 is opposite to the first capacitor electrode plate 150 .

The semiconductor substrate 110 may be monocrystalline silicon, polycrystalline silicon or amorphous silicon, or may be a semiconductor material such as germanium, silicon germanium, gallium arsenide, or other semiconductor materials. In this embodiment, the material of the semiconductor substrate 110 may be silicon.

The first surface of the semiconductor substrate 110 has a gate region 111 , a source region 112 and a drain region 113 , wherein the source region 112 and the drain region 113 are respectively arranged on both sides of the gate region 111 , or in other words, the gate The electrode region 111 is disposed between the source region 112 and the drain region 113 .

The source region 112 and the drain region 113 have the same conductivity type, and the gate region 111 has a different conductivity type from that of the source region 112 and the drain region 113 . The source region 112 , the drain region 113 and the gate region 111 can be made to have corresponding conductivity types by doping corresponding types of impurities in the semiconductor substrate 110 . The source region 112 and the drain region 113 can be doped with the same impurity through the same process, so that the source region 112 and the drain region 113 have the same properties, and the source region 112 and the drain region 113 can be interchanged with each other. In one embodiment, the conductivity type of the source region 112 and the drain region 113 is N-type, and the conductivity type of the gate region 111 is P-type. P-type semiconductor, also known as hole-type semiconductor, is a semiconductor that conducts holes mainly. N-type semiconductors, also known as electron-type semiconductors, are semiconductors that mainly conduct electrons. The source region 112 and the drain region 113 can form an N-type semiconductor by doping the source region 112 and the drain region 113 with a non-valent impurity element (such as antimony, arsenic, phosphorus, etc.), and a trivalent impurity element (such as boron) , indium, gallium, etc.) can make the gate region 111 form a P-type semiconductor.

Of course, as required, the conductivity type of the source region 112 and the drain region 113 may also be P-type, and the conductivity type of the gate region 111 may be N-type.

Since the conductivity type of the gate region 111 is different from that of the source region 112 and the drain region 113 , a PN junction is formed between the source region 112 and the gate region 111 and the drain region 113 and the gate region 111 respectively. The PN junction is turned on when the forward voltage is applied, and turned off when the reverse voltage is applied. Therefore, when the two interruption points in the external circuit are electrically connected to the source electrode 120 and the drain electrode 130 respectively, since the two PN junctions are arranged opposite to each other, no matter what the direction of the current is, there is always one PN junction in the reverse bias state, so that Keep the external circuits in an open-circuit state.

A gate insulating layer 140 is disposed on the gate region 111 , and the gate insulating layer 140 is used for isolating the semiconductor substrate 110 and other materials disposed on the gate insulating layer 140 . The material of the gate insulating layer 140 can be selected from a material with a high dielectric constant, which can reduce the direct tunneling current between the first capacitor plate 150 and the gate region 111 . For example, the material of the gate insulating layer 140 may be HfO ₂ , HfSiO, HfSiON, HfTaON, TiO ₂ , Al ₂ O ₃ or ZrO ₂ , and the like. The gate insulating layer 140 may be formed by deposition, such as atomic layer deposition or chemical vapor deposition. The gate insulating layer 140 may have a single-layer structure or a multi-layer structure, which is not limited in this embodiment of the present invention.

The first capacitor plate 150 is disposed on the gate insulating layer 140 . The first capacitor plate 150 may be formed by chemical vapor deposition, physical vapor deposition or electroplating, or may be disposed on the gate insulating layer 140 by other methods. The first capacitor electrode plate 150 includes a conductive metal layer, and the conductive metal layer may include a metal element material or an alloy material. For example, the conductive metal layer may include tungsten (W), aluminum (Al), titanium (Ti), copper (Cu), molybdenum (Mo), platinum (Pt), tantalum (Ta), nickel-manganese alloys such as _NiMn and NiMn ₅ ), nickel-chromium alloys (such as NiCr ₉ ) and other materials.

The first capacitor plate 150 may further include a barrier layer, and the barrier layer is disposed between the conductive metal layer and the gate insulating layer 140 for isolating the conductive metal layer and the gate insulating layer 140 to avoid diffusion of metal atoms in the conductive metal layer into the gate insulating layer 140 , and prevent intermediate products generated in the process of forming the conductive metal layer from entering the gate insulating layer 140 , thereby increasing the defects of the gate insulating layer 140 . The barrier layer may include copper oxide (CuO), copper nitride (CuN), titanium nitride (TiN), or tantalum nitride (TaN), among others.

The second capacitor electrode plate 160 is made of a metal conductor material. The second capacitor electrode plate 160 can be made of the same material as the first capacitor electrode plate 150 , or can be made of a different material from the first capacitor electrode plate 150 . The second capacitor plate 160 and the first capacitor plate 150 are separated by a certain distance and are substantially parallel. There is a dielectric between the first capacitor plate 150 and the second capacitor plate 160 , so that the first capacitor plate 150 , the second capacitor plate 160 and the space between the first capacitor plate 150 and the second capacitor plate 160 The dielectric constitutes a parallel plate capacitor. When a certain voltage is applied to the first capacitor plate 150 and the second capacitor plate 160 , the parallel plate capacitor will generate a corresponding electric field, thereby affecting the distribution of carriers (holes and electrons) in the gate region 111 .

The dielectric between the first capacitor plate 150 and the second capacitor plate 160 may be air or other dielectric materials. In one embodiment, the switching element 100 further includes a capacitor dielectric layer 170, the capacitor dielectric layer 170 is disposed between the first capacitor electrode plate 150 and the second capacitor electrode plate 160 to serve as a dielectric, and two ends of the capacitor dielectric layer 170 are respectively connected to the first capacitor electrode plate 150 and the second capacitor electrode plate 160. A capacitor plate 150 is connected to the second capacitor plate 160 . The capacitor dielectric layer 170 can be an insulating material with a certain elasticity, for example, a high molecular polymer with a certain elasticity can be used, thus, when a certain external force is applied to the second capacitor electrode plate 160, the first capacitor electrode plate 150 can be made The distance from the second capacitor plate 160 changes. Specifically, in this embodiment, the capacitor dielectric layer 170 has the elasticity of compression recovery. When the second capacitor electrode plate 160 is subjected to a pressure directed toward the first capacitor electrode plate 150 , the capacitor dielectric layer 170 is compressed by force, so that the first capacitor electrode plate 160 is compressed. The distance between the capacitor plate 150 and the second capacitor plate 160 is reduced. When the external force is removed, the distance between the first capacitor electrode plate 150 and the second capacitor electrode plate 160 is restored to the original size due to the elasticity of the capacitor dielectric layer 170 . In another embodiment, air is used as the dielectric between the first capacitor plate 150 and the second capacitor plate 160. For example, the semiconductor substrate 110 can be fixed on the first object, and the second capacitor plate 160 can be fixed on the first object. It is fixed on the second object, and the first capacitor electrode plate 150 and the second capacitor electrode plate 160 are set relative to each other at a certain distance. When pressure is applied to the second object, the second capacitor electrode plate 160 is moved closer to the first capacitor electrode plate. The direction of movement of 150 can change the distance between the first capacitor plate 150 and the second capacitor plate 160 .

Similar to the conductive metal layer of the first capacitor plate 150 , the material of the source electrode 120 and the drain electrode 130 can be tungsten (W), aluminum (Al), titanium (Ti), copper (Cu), molybdenum (Mo), Conductive metal materials such as platinum (Pt), tantalum (Ta), nickel-manganese alloys (such as NiMn ₃ and NiMn ₅ ), and nickel-chromium alloys (such as NiCr ₉ ). In one embodiment, the source electrode 120 and the drain electrode 130 may be made of a metal material with low resistivity such as copper or copper alloy. The materials of the gate electrode and the drain electrode 130 may be the same or different.

1 and 2 , in some embodiments, the projection of the first capacitor plate 150 on the first surface of the semiconductor substrate 110 and the source region 112 and the drain region 113 respectively have overlapping regions, that is, The width of the first capacitor plate 150 is larger than that of the gate region 111 , so that the gate region 111 can be opposite to the middle of the first capacitor plate 150 . Since the electric field lines at the edge of the charged plate are relatively curved and the electric field near the middle is substantially parallel, the first capacitor plate 150 and the source region 112 and the drain region 113 respectively have overlapping regions to ensure the electric field at the gate region 111. The electric field is basically a parallel electric field, which ensures that the switching element 100 can work normally and improves the sensitivity of the switching element 100 .

The source electrode 120 , the drain electrode 130 and the first capacitor plate 150 are insulated from each other. In some embodiments, referring to FIG. 1 , the gate insulating layer 140 partially covers the source region 112 and the drain region 113 , and the source electrode 120 and the drain electrode 130 are respectively disposed in the source region 112 and the drain region 113 without being gated The part covered by the polar insulating layer 140 . In one embodiment, the gate insulating layer 140 extends from the gate region 111 to both sides, covering a part of the source region 112 close to the gate region 111 and a part of the drain region 113 close to the gate region 111. The first The capacitor plate 150 is arranged on the gate insulating layer 140 and extends to the edge of the gate insulating layer 140 , and the gate electrode and the drain electrode 130 can be respectively arranged on both sides of the gate insulating layer 140 and are connected with the first capacitor plate 150 . a certain distance between them.

In some embodiments, referring to FIG. 2 , the switch element 100 may further include a sidewall 180 , and the sidewall 180 is an insulating material. The sidewalls 180 are arranged on both sides of the first capacitor plate 150 , the source 120 and the drain 130 are arranged on the outer side of the sidewall 180 , and the sidewalls 180 connect the two sides of the first capacitor plate 150 with the source 120 and the drain. 130 is isolated, so as to achieve insulation between the source electrode 120 and the first capacitor plate 150 and between the drain electrode 130 and the first capacitor plate 150 . In one embodiment, the spacer 180 may partially cover the source region 112 and the drain region 113 .

FIG. 3 is a schematic diagram of the principle of a switch element in an off state according to an embodiment of the present invention, and FIG. 4 is a schematic diagram of a principle of a switch element in a closed state according to an embodiment of the present invention. In the following, the conductivity type of the source region 112 and the drain region 113 is N-type, and the conductivity type of the gate region 111 is P-type as an example, and the operation principle of the switching element 100 according to the embodiment of the present invention will be described with reference to FIG. 3 and FIG. 4 . .

In use, the switching element 100 is connected to the target circuit T where the switch needs to be set, so that the source electrode 120 and the drain electrode 130 are electrically connected to two interruption points in the target circuit T respectively. A constant voltage is applied to the first capacitor electrode plate 150 and the second capacitor electrode plate 160 as a driving voltage through the driving circuit, so that the first capacitor electrode plate 150 carries a certain polarity and a certain amount of charges. The first capacitor plate 150 is connected to the positive electrode of the DC power supply, and the second capacitor electrode plate 160 is connected to the negative electrode of the DC power supply, so that the first capacitor electrode plate 150 carries a certain amount of positive charge. As required, the second capacitor plate 160 can be grounded. When the second capacitor plate 160 is grounded, the second capacitor plate 160 can be regarded as carrying zero charge.

The amount of charge carried by the first capacitor plate 150 can be calculated by the formula q=CU, where q is the amount of charge carried by the first capacitor plate 150, C is the capacitance of the capacitor, and U is the first capacitor plate 150 and the second capacitor plate 150. Voltage across capacitor plates 160 . For parallel plate capacitors, the size of the capacitance can be calculated by the formula C=εS/d. Among them, C is the capacitance of the capacitor, S is the area of the plate, d is the thickness of the dielectric between the two plates, and ε is the dielectric constant of the dielectric. It can be known from the above two formulas that the amount of charge carried by the first capacitor plate 150 is q=εUS/d. Therefore, when the area of the first capacitor electrode plate 150 and the second capacitor electrode plate 160 is constant, the dielectric material between the electrode plates remains unchanged, and the voltage between the first capacitor electrode plate 150 and the second capacitor electrode plate 160 is constant The amount of charge carried by the first capacitor plate 150 is inversely proportional to the distance between the first capacitor plate 150 and the second capacitor plate 160 . The electric field strength of the electric field generated by the parallel plate capacitor at the gate region 111 is proportional to the amount of charge carried by the first capacitor plate 150 .

The parallel plate capacitor generates a certain electric field, and the electric field is substantially perpendicular to the semiconductor substrate 110 , which repels the holes of the P-type gate region 111 and attracts the electrons of the minority. Referring to FIG. 4 , when the second capacitor electrode plate 160 is moved toward the direction close to the first capacitor electrode plate 150 by an external force (such as a user's pressing), the distance between the first capacitor electrode plate 150 and the second capacitor electrode plate 160 decreases. small, the amount of charge carried by the first capacitor plate 150 increases, and the intensity of the electric field generated by the first capacitor plate 150 at the gate region 111 also increases. When the distance between the first capacitor plate 150 and the second capacitor plate 160 decreases to a certain distance value, the electric field strength increases to a certain value, so that a certain number of minority electrons in the P-type gate region 111 are attracted to the surface of the P-type gate region 111, the surface of the P-type gate region 111 forms an inversion layer I (in FIG. 3 and FIG. 4, the inversion layer I is N-type), thereby turning on the N-type on both sides The source region 112 and the drain region 113 are formed, and then the target circuit T is turned on to achieve the effect of "closing" the switch. That is, when the switching element 100 is “closed”, a closed current loop is formed: target circuit T→source 120→source region 112→inversion layer I on the surface of gate region 111→drain region 113→drain 130 →Target circuit T. The smaller the distance between the first capacitor plate 150 and the second capacitor plate 160, the greater the generated electric field strength, the more minority electrons attracted to the surface of the P-type gate region 111, the more inversion electrons are formed. The larger the width of layer I, the smaller the resistance of the switching element 100.

Referring to FIG. 3 , when the user removes the pressing force, under the action of the elastic force of the capacitive dielectric layer 170 or under the action of other external forces, the second capacitor electrode plate 160 moves away from the first capacitor electrode plate 150 and returns to At the original position, the distance between the second capacitor plate 160 and the first capacitor plate 150 increases, and the electric field generated by the parallel plate capacitor at the gate region 111 decreases in intensity and is attracted to the gate region 111 The number of minority electrons on the surface is reduced until the inversion layer I cannot be formed to turn on the source region 112 and the drain region 113 , and an open circuit is formed at the switching element 100 .

The specific magnitude of the constant voltage applied to the first capacitor plate 150 and the second capacitor plate 160 depends on the specific parameters of the switching element 100 (such as the type and doping concentration of doping ions in the gate region 111 , the first capacitor plate 150 The distance between the second capacitor plate 160 and the second capacitor plate 160 when no external force is applied, the dielectric constant of the dielectric between the first capacitor plate 150 and the second capacitor plate 160, etc.) are selected, so that the switching element 100 is not subjected to external force. (When the second capacitor plate 160 is not pressed), the magnitude of the generated electric field is insufficient to form an inversion layer on the surface of the gate region 111 to conduct the source region 112 and the drain region 113 . That is, when the second capacitor plate 160 is not pressed, the switch element 100 is disconnected.

The switch element 100 in the embodiment of the present invention can be used as a switch for controlling the on-off of a circuit in various usage scenarios. Optionally, the switch element 100 in at least some embodiments of the present invention can be applied to an electronic device, and used as a button for a user to press to make the electronic device realize a corresponding function. The switching element 100 in the embodiment of the present invention changes the capacitance of the capacitor formed by the first capacitor plate 150 and the second capacitor plate 160 by changing the distance between the first capacitor plate 150 and the second capacitor plate 160 , thereby Realize the control of the corresponding circuit on and off. A small change in the distance between the first capacitor plate 150 and the second capacitor plate 160 can make the switch element 100 switch between on and off, so that the switch can be controlled by a light touch The state of the element 100 does not require the user to press the switch to move a large stroke, which can improve the user's experience. At the same time, the switch element 100 in the embodiment of the present invention can be arranged on the inner side of the casing of the electronic device, and the switch element 100 can be controlled by pressing the casing to cause slight deformation of the casing, without opening a hole in the casing, which is beneficial to the electronic device The integrated design improves the waterproof and dustproof performance and the cleanliness of the appearance. Meanwhile, the switch element 100 of the embodiment of the present invention is simple in structure, small in size and low in cost, compared with a touch switch in which a pulse signal generated when a touch sensing chip detects a human touch is provided to control the on-off.

FIG. 5 is a schematic diagram of the appearance of an electronic device according to an embodiment of the present invention, FIG. 6 is a schematic diagram of an internal structure of an electronic device according to an embodiment of the present invention, and FIG. 7 is a schematic diagram of the installation of a switch element inside the electronic device according to an embodiment of the present invention. 8 is a schematic structural diagram of a working circuit of an electronic device according to an embodiment of the present invention. Wherein, FIG. 7 is a partial enlarged schematic diagram of part A in FIG. 6 .

In some embodiments, referring to FIGS. 5 to 8 , the electronic device includes a casing 200 and a working circuit disposed in the casing 200 , and the working circuit includes a power management circuit 300 , a driving circuit 400 , and at least some embodiments of the present invention. Switching element 100 . The power management circuit 300 is electrically connected to a built-in power supply of the electronic device or to a power supply external to the electronic device, and is used to manage the input and/or output state of the power supply 500 . The source 120 and the drain 130 of the switching element 100 are respectively electrically connected to the power management circuit 300 . The driving circuit 400 is electrically connected to the first capacitor plate 150 and the second capacitor plate 160 in the switching element 100, and applies a certain voltage to the first capacitor plate 150 and the second capacitor plate 160, so that the switching element 100 can is triggered and works normally. The second capacitor plate 160 is connected to the inner wall of the casing 200. When the user presses the corresponding area on the casing 200, the casing 200 is deformed, so that the gap between the second capacitor plate 160 and the first capacitor plate 150 is deformed. When the distance is reduced, the circuit at the switching element 100 is turned on, so that the first access terminal 310 and the second access terminal 320 of the power management circuit 300 are turned on. Therefore, there is no need to provide a hole for exposing the switch element 100 at the casing 200, and the casing 200 can maintain a high integrity.

In the present invention, the input state of the power supply includes one or more of the following: whether the power supply receives the input of the power, how the power supply receives the input of the power, and determines which part of the power supply receives the input of the power when multiple power supplies are included, or Other states related to the input of the power supply. The output status of the power supply includes one or more of the following: whether the power supply is outputting electrical energy, the output power of the power supply, the output method of the power supply, the distribution method of the electrical energy of the power supply in various other electrical components in the electronic equipment, including many When a power supply is used, it is determined which part of the power supply outputs power and other states related to the output of the power supply.

8, the power management circuit 300 includes a first access terminal 310 and a second access terminal 320, an open circuit is formed between the first access terminal 310 and the second access terminal 320, and the switching element 100 is connected to the first access terminal between the incoming end 310 and the second incoming end 320 . Specifically, the source electrode 120 is connected to the first access terminal 310 , and the drain electrode 130 is connected to the second access terminal 320 .

The electronic device may include a power supply 500 , the power supply 500 is disposed in the housing 200 , and the power management circuit 300 and the driving circuit 400 are electrically connected. The driving circuit 400 is always on and applies a constant voltage to the first capacitor plate 150 and the second capacitor plate 160 , so that the switching element 100 is always in a working state and can be triggered. The power source 500 can be a rechargeable battery, and the electronic device is further provided with a connector, a wireless power receiving circuit, etc. to be electrically connected to the power source 500 to receive external power to charge the power source 500 .

The electronic device may also not be provided with the power supply 500, but may be connected to an external power supply through an electrical connector such as a cable, and the external power supply may provide power for the operation of the electronic device. When the electronic device is connected to an external power supply and obtains power from the external power supply, the driving circuit 400 is turned on, so that the switching element 100 is in a working state and can be triggered by pressing.

The driving circuit 400 may include a linear voltage regulator to ensure a stable voltage is applied to the first capacitor plate 150 and the second capacitor plate 160 . When the output voltage of the power supply 500 is low, the linear regulator can use a low-dropout current linear regulator to ensure that the driving circuit 400 can work normally. The voltage applied by the driving circuit 400 to the first capacitor plate 150 and the second capacitor plate 160 is selected according to the parameters of the switching element 100, so that when the casing 200 is not squeezed, the first capacitor plate 150 and the second capacitor plate 150 The electric field generated by the capacitor plate 160 is not enough to generate an inversion layer on the surface of the gate region 111 to conduct the source region 112 and the drain region 113; at the same time, when the casing 200 is subjected to a certain pressing force, the first capacitor electrode The electric field strength generated by the plate 150 and the second capacitor plate 160 is sufficient to cause the switching element 100 to be turned on.

In some embodiments, the electronic device further includes a grounding member (not shown in the figure), and the second capacitor plate 160 is connected to the grounding member, so that the second capacitor plate 160 is grounded, which can reduce the effect of static electricity on the operation of the electronic device. adverse effects while improving safety.

In some embodiments, the electronic device may be implemented as a charging case, which is used to charge the product to be charged. The product to be charged can be various rechargeable products, such as earphones, batteries, electronic watches, electric toothbrushes, and so on. For example, referring to FIGS. 5 to 7 , the electronic device may be an earphone charging box, and the product to be charged is an earphone. The casing 200 includes a box body 210 and a box cover 220. The box body 210 includes a top wall 211, a bottom wall 212, and a side wall 213 connecting the top wall 211 and the bottom wall 212. The top wall 211 and the bottom wall 212 are disposed opposite to each other. The top wall 211, The bottom wall 212 and the side wall 213 are connected together to form a hollow cavity 214 . In some embodiments, the side wall 213 and the bottom wall 212 can be integrally formed, which can improve the sealing performance of the box body 210 / all the working circuits can be arranged in the cavity 214, or a part can be arranged in the cavity 214 and the other part can be arranged in the cavity 214. Set in the box cover 220 . In one embodiment, the power supply 500 , the power management circuit 300 , the driving circuit 400 and the switching element 100 are all arranged in the cavity 214 .

FIG. 9 is a schematic diagram when a box cover of an electronic device according to an embodiment of the present invention is opened.

6 and 9, the outer surface of the top wall 211 has a accommodating groove 211a for accommodating the product to be charged, and the shape of the accommodating groove 211a matches the shape of the product to be charged, so as to locate the product to be charged and avoid The product to be charged shakes in the accommodating slot 211a. The box cover 220 is disposed opposite to the accommodating groove 211a, and the box body 210 and the box cover 220 are movable relative to each other, so that the box cover 220 can be closed to close and open the accommodating groove 211a to expose the accommodating groove 211a, such as a box The cover 220 may be hinged with the case body 210 (as shown in FIG. 9 ) or completely separable from the case body 210 . The shape of the box cover 220 matches the shape of the top wall 211 of the box body 210, so that after the box cover 220 is closed, the accommodating groove 211a can be well sealed, so as to realize the protection of the product to be charged in the accommodating groove 211a. .

The charging box can realize power transmission to the product to be charged in a wired and/or wireless manner. In one embodiment, the electronic device further includes an output terminal, the output terminal is electrically connected to the power supply 500, and one end of the output terminal can be set in the accommodating slot 211a, when the product to be charged is placed in the accommodating slot 211a, the to-be-charged product A charging contact on the product can be electrically connected to this output terminal. In another embodiment, the product to be charged has a wireless power receiving circuit, and the electronic device includes a wireless power output circuit. When the product to be charged is placed in the accommodating slot 211a, the wireless power output circuit can communicate with the wireless power in the product to be charged. The receiving circuit is coupled to transmit power wirelessly.

Referring to FIGS. 6 and 7 , part or all of the power management circuit 300 and the driving circuit 400 may be integrated on a printed circuit board 600 fixed in the cavity 214 of the box body 210 . The semiconductor substrate 110 of the switching element 100 has a second surface opposite to the first surface, and the second surface of the semiconductor substrate 110 can be fixed on the surface of the printed circuit board 600 opposite to the side wall 213 . The second capacitor electrode plate 160 is fixed on the inner wall of the side wall 213 and faces the first capacitor electrode plate 150 . For example, the second capacitor electrode plate 160 can be connected to the inner wall of the side wall 213 by bonding or welding. The side wall 213 of the box body 210 is made of insulating material and has certain elasticity. When the user presses the area on the side wall 213 corresponding to the second capacitor plate 160, the side wall 213 is deformed, so that the distance between the second capacitor plate 160 and the first capacitor plate 150 is reduced, so that the switching element 100 is "closed" ”, the first access terminal 310 and the second access terminal 320 in the power management circuit 300 are turned on. When the user's hand leaves the sidewall 213 , the sidewall 213 returns to its original shape, and the distance between the second capacitor plate 160 and the first capacitor plate 150 returns to the original state, thereby turning the switching element 100 "off". In one embodiment, the power management circuit 300 can control the power output state of the power supply 500 to the product to be charged according to the on-off state of the switch element 100 . For example, the user presses the side wall 213 to turn the switch element 100 "on", and the power management circuit 300 can make the power supply 500 transmit power to the product to be charged in response to receiving the closing signal of the switch element 100 . In one embodiment, the power management circuit 300 can also manage the input and/or output states of the power source 500 according to the number of times the user presses the switch element 100 within a predetermined time range. For example, the power management circuit 300 controls the power supply 500 to output power in a first manner (for example, a larger power) in response to receiving the closing signal of the switching element 100 within a certain time range (for example, 2 seconds); and the power management The circuit 300 controls the power supply 500 to output power in a first manner (eg, a smaller power) in response to receiving the closing signal of the switching element 100 twice within a certain time range (eg, 2 seconds).

By applying the switch elements in at least some of the embodiments of the present invention to the electronic equipment, the housing of the electronic equipment does not need to reserve holes for the switch elements to be exposed, the appearance integrity of the electronic equipment can be improved, and the waterproof and dustproof of the electronic equipment can be improved. The reliability of the switching element is improved, and the user's operation is convenient. At the same time, the structure of the switch element is simple, which can make the structure of the electronic device more compact, which is beneficial to the miniaturization of the electronic device.

The above descriptions are only ideal embodiments of the present invention, and are not intended to limit the present invention. For those skilled in the art, the present invention may have various modifications and changes. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention shall be included within the protection scope of the present invention.

In the switch element and the electronic device provided by the embodiment of the present invention, the stroke of the switch element is short, and the device surface does not need to be exposed, which can improve the appearance integrity of the electronic device, which is beneficial to the waterproof and dustproof of the electronic device, and at the same time, the structure of the switch element is simple, Small in size and convenient for users to operate.

T: target circuit I: Inversion layer 100: switch element 110: Semiconductor substrate 111: Gate area 112: source region 113: drain region 120: source 130: Drain 140: Gate insulating layer 150: The first capacitor plate 160: The second capacitor plate 170: Capacitive dielectric layer 180: Side Wall 200: Shell 210: Box 211: Top Wall 211a: accommodating slot 212: Bottom wall 213: Sidewall 214: cavity 220: box cover 300: Power Management Circuit 310: The first access terminal 320: Second access terminal 400: Drive circuit 500: Power 600: Printed Circuit Board

[FIG. 1] A schematic structural diagram of a switching element provided in this embodiment. [FIG. 2] A schematic structural diagram of another switching element provided in this embodiment. [FIG. 3] A schematic diagram of the principle of a switch element provided in this embodiment in an off state. [FIG. 4] A schematic diagram of the principle of a switch element provided in this embodiment in a closed state. [FIG. 5] A schematic diagram of the appearance of an electronic device provided in this embodiment. [FIG. 6] A schematic diagram of the internal structure of an electronic device provided in this embodiment. [FIG. 7] A schematic diagram of the installation of the switch element provided in this embodiment inside the electronic device. [FIG. 8] A schematic structural diagram of a working circuit of an electronic device provided in this embodiment. [FIG. 9] A schematic diagram of an electronic device provided in this embodiment when the box cover is opened.

100: switch element

110: Semiconductor substrate

111: Gate area

112: source region

113: drain region

120: source

130: Drain

140: Gate insulating layer

150: The first capacitor plate

160: The second capacitor plate

170: Capacitive dielectric layer

Claims (10)

A switching element is characterized by comprising: A semiconductor substrate (110), the first surface of the semiconductor substrate (110) has a gate region (111) and a source region (112) and a drain region (112) respectively provided on both sides of the gate region (111). 113), the conductivity type of the source region (112) and the drain region (113) is different from the conductivity type of the gate region (111); a source electrode (120), arranged in the source electrode region (112); a drain (130), arranged in the drain region (113); a gate insulating layer (140) disposed on the gate region (111); a first capacitor plate (150) disposed on the gate insulating layer (140); and The second capacitor electrode plate (160) is arranged in parallel with the first capacitor electrode plate (150). The switching element according to claim 1, wherein the conductivity type of the source region (112) and the drain region (113) is N-type, and the conductivity type of the gate region (111) is P-type. The switch element according to claim 1, wherein the switch element (100) further comprises: The capacitor dielectric layer (170) is arranged between the first capacitor electrode plate (150) and the second capacitor electrode plate (160). The switching element according to claim 1, wherein the gate insulating layer (140) also partially covers the source region (112) and the drain region (113), and the first capacitor plate (150) is in the The projection of the first surface of the semiconductor substrate (110) has overlapping regions with the source region (112) and the drain region (113). An electronic device is characterized by comprising a casing (200) and a working circuit arranged in the casing (200), the working circuit comprising: switch element(100); A power management circuit (300) electrically connected to the switching element (100), the power management circuit (300) being configured to control the input and/or output state of the power supply (500) according to the on-off state of the switching element (100) ;as well as drive circuit (400); Wherein, the switch element (100) includes: A semiconductor substrate (110), the first surface of the semiconductor substrate (110) has a gate region (111) and a source region (112) and a drain region (112) respectively provided on both sides of the gate region (111). 113), the conductivity type of the source region (112) and the drain region (113) is different from the conductivity type of the gate region (111); a source electrode (120), arranged in the source electrode region (112), and the source electrode (120) is electrically connected to the power management circuit (300); a drain (130), disposed in the drain region (113), the drain (130) is electrically connected to the power management circuit (300); a gate insulating layer (140) disposed on the gate region (111); a first capacitor plate (150) disposed on the gate insulating layer (140); and The second capacitor electrode plate (160) is arranged in parallel and opposite to the first capacitor electrode plate (150), and the second capacitor electrode plate (160) is connected to the inner wall of the casing (200); Wherein, the drive circuit (400) is electrically connected with the first capacitor plate (150) and the second capacitor plate (160) to connect the first capacitor plate (150) and the second capacitor plate (160) ) applied voltage. The electronic device according to claim 5, wherein the conductivity type of the source region (112) and the drain region (113) is N-type, the conductivity type of the gate region (111) is P-type, and the driving The circuit (400) is configured to electrically connect the first capacitive plate (150) to the positive terminal of the power supply (500). The electronic device according to claim 5, wherein the switch element (100) further comprises: The capacitor dielectric layer (170) is arranged between the first capacitor electrode plate (150) and the second capacitor electrode plate (160). The electronic device according to claim 5, wherein the gate insulating layer (140) also partially covers the source region (112) and the drain region (113), and the first capacitor plate (150) is in the The projection of the first surface of the semiconductor substrate (110) has overlapping regions with the source region (112) and the drain region (113). The electronic device according to claim 5, wherein the electronic device further comprises: A power supply (500) is provided in the casing (200), and the power supply (500) is electrically connected with the power management circuit (300) and the driving circuit (400). The electronic device according to claim 5, wherein the electronic device is a charging box for charging the product to be charged; The housing (200) includes a box body (210) and a box cover (220), the box body (210) includes a top wall (211), a bottom wall (212) and connects the top wall (211) and the bottom wall (212) ) of the side wall (213), the top wall (211), the bottom wall (212) and the side wall (213) are connected to form a cavity (214), and the switch element (100) is arranged in the cavity (214), The second capacitor plate (160) is connected to the inner wall of the side wall (213), and the outer surface of the top wall (211) has an accommodating groove (211a), the accommodating groove (211a) is used for accommodating the to-be-to-be A charging product, the box cover (220) is opposite to the accommodating groove (211a); The power management circuit (300) is configured to control the power supply (500) to output electric energy to the product to be charged according to the on-off state of the switching element (100).

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