TW202209065A - Touch panel, manufacturing method of touch panel, and touch display device - Google Patents

Touch panel, manufacturing method of touch panel, and touch display device Download PDF

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TW202209065A
TW202209065A TW109129206A TW109129206A TW202209065A TW 202209065 A TW202209065 A TW 202209065A TW 109129206 A TW109129206 A TW 109129206A TW 109129206 A TW109129206 A TW 109129206A TW 202209065 A TW202209065 A TW 202209065A
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touch panel
film layer
conductive
touch sensing
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TWI746132B (en
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余建賢
丁紫君
賴藝雲
柯湧彬
方欽雪
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大陸商宸美(廈門)光電有限公司
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A touch panel includes a substrate, a periphery trace, and a touch sensing electrode. The substrate has a visible area and a periphery area. The periphery trace is disposed on the periphery area of the substrate. The touch sensing electrode is disposed on the visible area of the substrate and electrically connected to the periphery trace, and has a mesh-like pattern interlaced by a plurality of thin lines. The periphery trace and the touch sensing electrode each includes a plurality of conductive nanostructures and a film layer added onto the conductive nanostructures, and an interface between the conductive nanostructures and the film layer substantially has a covering structure.

Description

觸控面板、觸控面板的製作方法及其裝置Touch panel, manufacturing method of touch panel and device thereof

本揭露內容是有關於觸控面板、觸控面板的製作方法以及包括上述觸控面板的裝置。The present disclosure relates to a touch panel, a manufacturing method of the touch panel, and a device including the above touch panel.

近年來,由於透明導體可同時使光線穿透並提供適當的導電性,因此常被應用於許多顯示或觸控相關的裝置中。一般而言,透明導體可以是以各種金屬氧化物製成的薄膜,例如氧化銦錫(ITO)、氧化銦鋅(IZO)、氧化鎘錫(CTO)或摻鋁氧化鋅(AZO)薄膜。然而,這些金屬氧化物薄膜並不能滿足顯示裝置的可撓性需求。因此,現今發展出了多種可撓性的透明導體,例如利用奈米等級的材料所製成的透明導體。In recent years, transparent conductors are often used in many display or touch related devices because they can simultaneously transmit light and provide proper conductivity. In general, transparent conductors can be films made of various metal oxides, such as indium tin oxide (ITO), indium zinc oxide (IZO), cadmium tin oxide (CTO), or aluminum doped zinc oxide (AZO) films. However, these metal oxide films cannot meet the flexibility requirements of display devices. Therefore, a variety of flexible transparent conductors have been developed, such as transparent conductors made of nanoscale materials.

然而,上述的奈米等級的材料的製程技術尚有許多需要解決的問題。舉例而言,當利用奈米線製作觸控電極時,觸控電極與周邊區由金屬製成的引線須進行搭接,而搭接區會造成周邊區的尺寸無法縮減,進而導致周邊區的寬度較大,無法滿足顯示器的窄邊框需求。又舉另一例而言,奈米線製作的觸控電極往往為了考量光學效果等,使得阻容式負載值(resistive capacitive loading,RC loading)較大,較不利於普遍應用。However, there are still many problems to be solved in the process technology of the above-mentioned nano-scale materials. For example, when using nanowires to fabricate the touch electrodes, the touch electrodes and the wires made of metal in the peripheral area must be overlapped, and the overlapping area will cause the size of the peripheral area to be unable to be reduced, which will lead to the loss of the peripheral area. The width is large and cannot meet the narrow border requirements of the display. For another example, the touch electrodes made of nanowires often have a large resistive capacitive loading (RC loading) in consideration of optical effects and the like, which is not conducive to general application.

根據本揭露一些實施方式,觸控面板包括基板、周邊引線以及第一觸控感應電極。基板具有顯示區以及周邊區。周邊引線設置於基板的周邊區。第一觸控感應電極設置於基板的顯示區且電性連接周邊引線,並具有由複數個第一細線所構成的網格狀圖案。周邊引線及第一觸控感應電極各自包括複數個導電奈米結構以及外加於導電奈米結構的膜層,且導電奈米結構與膜層的界面實質上具有披覆結構。According to some embodiments of the present disclosure, a touch panel includes a substrate, peripheral leads, and first touch sensing electrodes. The substrate has a display area and a peripheral area. The peripheral leads are arranged in the peripheral area of the substrate. The first touch sensing electrodes are arranged in the display area of the substrate and are electrically connected to the peripheral leads, and have a grid-like pattern formed by a plurality of first thin lines. The peripheral leads and the first touch sensing electrodes each include a plurality of conductive nanostructures and a film layer applied to the conductive nanostructures, and the interface between the conductive nanostructures and the film layer substantially has a cladding structure.

在一些實施方式中,披覆結構包括鍍層,且鍍層完全包覆導電奈米結構與膜層的界面。In some embodiments, the cladding structure includes a plating layer, and the plating layer completely covers the interface between the conductive nanostructure and the film layer.

在一些實施方式中,相鄰的導電奈米結構之間填充有膜層,且膜層中不具有單獨存在的披覆結構。In some embodiments, a film layer is filled between adjacent conductive nanostructures, and the film layer does not have a separate cladding structure.

在一些實施方式中,導電奈米結構可包括金屬奈米線,且披覆結構完全包覆金屬奈米線與膜層的界面,並在金屬奈米線與膜層的界面形成均勻的披覆層。In some embodiments, the conductive nanostructures may include metal nanowires, and the coating structure completely covers the interface between the metal nanowire and the film layer, and forms a uniform coating on the interface between the metal nanowire and the film layer layer.

在一些實施方式中,披覆結構係由導電材料所製成的層狀結構、島狀突起結構、點狀突起結構或其組合。In some embodiments, the cladding structure is a layered structure, an island-like protrusion structure, a point-like protrusion structure, or a combination thereof made of conductive materials.

在一些實施方式中,導電材料包括銀、金、銅、鎳、鉑、銥、銠、鈀、鋨或其組合的合金。In some embodiments, the conductive material includes alloys of silver, gold, copper, nickel, platinum, iridium, rhodium, palladium, osmium, or combinations thereof.

在一些實施方式中,披覆結構係由單一金屬材料或合金材料所製成的單層結構,或者係由兩種以上的金屬材料或合金所製成的兩層或多層結構。In some embodiments, the cladding structure is a single-layer structure made of a single metal material or alloy material, or a two-layer or multi-layer structure made of two or more metal materials or alloys.

在一些實施方式中,披覆結構係化學鍍銅層、電鍍銅層、化學鍍銅鎳層、化學鍍銅銀層或其組合。In some embodiments, the cladding structure is an electroless copper layer, an electroless copper layer, an electroless copper nickel layer, an electroless copper silver layer, or a combination thereof.

在一些實施方式中,導電奈米結構、膜層以及披覆結構位於第一細線中。In some embodiments, the conductive nanostructure, the film layer, and the capping structure are located in the first thin line.

在一些實施方式中,第一細線的線寬介於1微米至10微米之間,且相鄰之第一細線的線距介於1微米至10微米之間。In some embodiments, the line width of the first thin lines is between 1 μm and 10 μm, and the line spacing of the adjacent first thin lines is between 1 μm and 10 μm.

在一些實施方式中,基板具有相對的第一表面以及第二表面,第一觸控感應電極設置於基板的第一表面,且觸控面板更包括第二觸控感應電極,設置於基板的第二表面及顯示區,其中第二觸控感應電極具有由複數個第二細線交錯而成的網格狀圖案。In some embodiments, the substrate has an opposite first surface and a second surface, the first touch sensing electrodes are disposed on the first surface of the substrate, and the touch panel further includes second touch sensing electrodes disposed on the first surface of the substrate. Two surfaces and a display area, wherein the second touch sensing electrode has a grid-like pattern formed by a plurality of second thin lines interlaced.

在一些實施方式中,第二觸控感應電極包括導電奈米結構以及外加於導電奈米結構的膜層,且導電奈米結構與膜層的界面實質上具有披覆結構。In some embodiments, the second touch sensing electrode includes a conductive nanostructure and a film layer applied to the conductive nanostructure, and an interface between the conductive nanostructure and the film layer substantially has a cladding structure.

在一些實施方式中,由第一細線交錯而成的網格狀圖案與由第二細線交錯而成的網格狀圖案不完全重疊。In some embodiments, the grid-like pattern of interlacing the first thin lines does not completely overlap the grid-like pattern interlacing the second thin lines.

根據本揭露另一些實施方式,觸控面板的製作方法包括:提供具有顯示區及周邊區的基板;設置複數個導電奈米結構於顯示區及周邊區,以形成導電層;外加膜層於導電層上,並使膜層達到預固化或未完全固化狀態;進行圖案化步驟;以及進行改質步驟,使披覆結構成型在位於顯示區及周邊區的導電奈米結構的表面,使得導電奈米結構與膜層的界面實質上具有披覆結構。上述圖案化步驟包括:圖案化位於顯示區的導電層與膜層,以形成具有由複數個細線所構成之網格狀圖案的觸控感應電極;以及圖案化位於周邊區的導電層與膜層,以形成周邊引線。According to other embodiments of the present disclosure, a method for fabricating a touch panel includes: providing a substrate having a display area and a peripheral area; disposing a plurality of conductive nanostructures in the display area and the peripheral area to form a conductive layer; adding a film layer on the conductive layer layer, and make the film layer reach a pre-cured or incompletely cured state; perform a patterning step; and perform a modification step, so that the cladding structure is formed on the surface of the conductive nanostructures located in the display area and the peripheral area, so that the conductive nanostructures are formed. The interface between the rice structure and the film layer essentially has a cladding structure. The patterning step includes: patterning the conductive layer and the film layer in the display area to form a touch sensing electrode with a grid pattern composed of a plurality of thin lines; and patterning the conductive layer and the film layer in the peripheral area , to form perimeter leads.

在一些實施方式中,圖案化步驟係在改質步驟之前或之後進行。In some embodiments, the patterning step is performed before or after the modifying step.

在一些實施方式中,圖案化位於顯示區以及周邊區的導電層與膜層係在同一道製程中進行。In some embodiments, the patterning of the conductive layer and the film layer in the display area and the peripheral area is performed in the same process.

在一些實施方式中,改質步驟包括:將膜層及導電奈米結構浸入化學鍍溶液,化學鍍溶液滲入膜層中並與導電奈米結構接觸,使得金屬析出於導電奈米結構的表面。In some embodiments, the modifying step includes: immersing the film layer and the conductive nanostructures in an electroless plating solution, and the electroless plating solution penetrates into the film layer and contacts the conductive nanostructures, so that metal is precipitated on the surface of the conductive nanostructures.

在一些實施方式中,披覆結構沿著導電奈米結構的表面形成,並位於導電奈米結構與膜層的界面。In some embodiments, the cladding structure is formed along the surface of the conductive nanostructure and is located at the interface between the conductive nanostructure and the film layer.

在一些實施方式中,外加膜層於導電層上包括:塗佈聚合物於導電層上;以及控制固化條件,使得聚合物達到預固化或未完全固化狀態。In some embodiments, applying a film layer on the conductive layer includes: coating a polymer on the conductive layer; and controlling curing conditions so that the polymer reaches a pre-cured or incompletely cured state.

在一些實施方式中,外加膜層於導電層上包括:塗佈聚合物於導電層上;以及控制固化條件,使得聚合物達到預固化或未完全固化狀態,其中預固化或未完全固化狀態的膜層具有第一層區域及第二層區域,且第二層區域的固化狀態高於第一層區域的固化狀態。In some embodiments, applying a film layer on the conductive layer includes: coating a polymer on the conductive layer; and controlling curing conditions so that the polymer reaches a pre-cured or incompletely cured state, wherein the pre-cured or incompletely cured state of The film layer has a first layer region and a second layer region, and the curing state of the second layer region is higher than that of the first layer region.

在一些實施方式中,在第一層區域中,披覆結構沿著導電奈米結構的表面形成,並位於導電奈米結構與膜層的界面。In some embodiments, in the first layer region, the capping structure is formed along the surface of the conductive nanostructure and is located at the interface of the conductive nanostructure and the film layer.

在一些實施方式中,控制固化條件可包括:引入氣體,並控制氣體在第一層區域與第二層區域各自的濃度。In some embodiments, controlling the curing conditions may include introducing a gas and controlling the respective concentrations of the gas in the first layer region and the second layer region.

在一些實施方式中,改質步驟包括化學鍍步驟、電鍍步驟或其組合。In some embodiments, the modifying step includes an electroless plating step, an electroplating step, or a combination thereof.

根據本揭露另一些實施方式,裝置包括前述的觸控面板。According to other embodiments of the present disclosure, the device includes the aforementioned touch panel.

在一些實施方式中,裝置可包括顯示器、可攜式電話、平板計算機、穿戴裝置、車用裝置、筆記型電腦或偏光片。In some embodiments, the device may include a display, a portable phone, a tablet computer, a wearable device, a vehicle device, a notebook computer, or a polarizer.

根據本揭露上述實施方式,由於在本揭露的觸控面板中,位於周邊區的周邊引線以及位於顯示區的觸控感應電極皆是由改質後的金屬奈米線所形成,因此可有效地降低觸控面板的面電阻以提升觸控面板的導電度,並可有效地降低觸控面板的阻容式負載值(resistive capacitive loading,RC loading)。另一方面,由於位於顯示區的觸控感應電極具有由多個細線交錯而成的網格狀圖案,因此可避免改質後的金屬奈米線影響顯示區的透光率,進而使得觸控面板的顯示區具有良好的光學特性。此外,由於本揭露之觸控面板的周邊引線及觸控感應電極皆是由改質後的金屬奈米線所製成,故在觸控面板的製作過程中,可整面性地實施改質步驟,以省去遮罩的使用,進而避免因使用遮罩所產生的對位誤差。換句話說,由於本揭露的周邊引線以及觸控感應電極在進行改質步驟時不須對位,因此不須預留對位誤差空間。如此一來,可降低觸控面板之周邊區的寬度,進而達到顯示器的窄邊框需求。According to the above-mentioned embodiments of the present disclosure, in the touch panel of the present disclosure, since the peripheral leads located in the peripheral area and the touch sensing electrodes located in the display area are both formed by the modified metal nanowires, it can effectively The surface resistance of the touch panel is reduced to improve the conductivity of the touch panel, and can effectively reduce the resistive capacitive loading (RC loading) of the touch panel. On the other hand, since the touch sensing electrodes in the display area have a grid-like pattern formed by a plurality of fine lines interlaced, the modified metal nanowires can prevent the light transmittance of the display area from being affected by the modified metal nanowires, thereby making the touch The display area of the panel has good optical properties. In addition, since the peripheral leads and the touch sensing electrodes of the touch panel of the present disclosure are all made of the modified metal nanowires, the modification can be performed on the entire surface of the touch panel during the manufacturing process of the touch panel. step, so as to omit the use of the mask, thereby avoiding the alignment error caused by the use of the mask. In other words, since the peripheral leads and the touch sensing electrodes of the present disclosure do not need to be aligned during the modification step, there is no need to reserve an alignment error space. In this way, the width of the peripheral area of the touch panel can be reduced, thereby meeting the requirement of a narrow frame of the display.

以下將以圖式揭露本揭露之複數個實施方式,為明確地說明起見,許多實務上的細節將在以下敘述中一併說明。然而,應瞭解到,這些實務上的細節不應用以限制本揭露。也就是說,在本揭露部分實施方式中,這些實務上的細節是非必要的,因此不應用以限制本揭露。此外,為簡化圖式起見,一些習知慣用的結構與元件在圖式中將以簡單示意的方式繪示之。另外,為了便於讀者觀看,圖式中各元件的尺寸並非依實際比例繪示。Several embodiments of the present disclosure will be disclosed in the following drawings, and for the sake of clarity, many practical details will be described together in the following description. It should be understood, however, that these practical details should not be used to limit the present disclosure. That is to say, in some embodiments of the present disclosure, these practical details are unnecessary, and therefore should not be used to limit the present disclosure. In addition, for the purpose of simplifying the drawings, some well-known structures and elements will be shown in a simple and schematic manner in the drawings. In addition, for the convenience of the reader, the size of each element in the drawings is not drawn according to the actual scale.

此外,諸如「下」或「底部」和「上」或「頂部」的相對術語可在本文中用於描述一個元件與另一元件的關係,如圖所示。應當理解,相對術語旨在包括除了圖中所示的方位之外的裝置的不同方位。例如,若一附圖中的裝置翻轉,則被描述為在其他元件的「下」側的元件將被定向在其他元件的「上」側。因此,示例性術語「下」可以包括「下」和「上」的取向,取決於附圖的特定取向。類似地,如果一個附圖中的裝置翻轉,則被描述為在其它元件「下方」或「下方」的元件將被定向為在其它元件「上方」。因此,示例性術語「下面」或「下面」可以包括上方和下方的取向。Furthermore, relative terms such as "lower" or "bottom" and "upper" or "top" may be used herein to describe one element's relationship to another element, as shown in the figures. It should be understood that relative terms are intended to encompass different orientations of the device in addition to the orientation shown in the figures. For example, if the device in one of the figures is turned over, elements described as being on the "lower" side of other elements would then be oriented on "upper" sides of the other elements. Thus, the exemplary term "lower" may include an orientation of "lower" and "upper", depending on the particular orientation of the figures. Similarly, if the device in one of the figures is turned over, elements described as "below" or "beneath" other elements would then be oriented "above" the other elements. Thus, the exemplary terms "below" or "below" can include an orientation of above and below.

另外,關於本文中所使用的「約」、「大約」或「大致」,一般是指數值的誤差或範圍於百分之二十以內,較佳地是於百分之十以內,更佳地是於百分之五以內。文中若無明確說明,所提及的數值皆視為近似值,亦即具有如「約」、「大約」或「大致」所表示的誤差或範圍。In addition, with regard to "about", "approximately" or "approximately" as used herein, the error or range of the index value is generally within twenty percent, preferably within ten percent, more preferably is within five percent. Unless explicitly stated in the text, the numerical values mentioned are considered to be approximations, that is, with errors or ranges such as "about", "approximately" or "approximately".

應瞭解到,本文中所使用的「導電奈米結構」,一般是指由奈米結構所組成的層(layer)或膜(film),其片電阻可小於約500歐姆/平方,較佳地可小於約200歐姆/平方,且更佳地可小於約100歐姆/平方;而上述「奈米結構」,一般是指具有奈米尺寸的結構,例如至少具有一個方向尺寸(例如線徑、長度、寬度或厚度)為奈米等級的線狀結構、柱狀結構、片狀結構、網格狀結構、管狀結構或其組合。It should be understood that the term "conductive nanostructures" as used herein generally refers to a layer or film composed of nanostructures, the sheet resistance of which can be less than about 500 ohms/square, and preferably can be Less than about 200 ohms/square, and more preferably less than about 100 ohms/square; and the above-mentioned "nanostructure" generally refers to a structure with nanometer dimensions, such as at least one dimension (such as wire diameter, length, width or thickness) are nanoscale linear structures, columnar structures, sheet-like structures, grid-like structures, tubular structures, or combinations thereof.

本揭露提供一種導電奈米結構(例如金屬奈米線)的改質方法以及使用改質的導電奈米結構製作而成的觸控面板與裝置。為了清楚起見及方便說明,在本文中,將先針對導電奈米結構的改質方法進行說明,並以金屬奈米線為例。The present disclosure provides a method for modifying conductive nanostructures (eg, metal nanowires), and a touch panel and a device fabricated by using the modified conductive nanostructures. For the sake of clarity and convenience of description, in this paper, the modification method of the conductive nanostructure will be described first, and a metal nanowire will be used as an example.

第1A圖至第1C圖繪示根據本揭露一些實施方式之金屬奈米線的改質方法在不同步驟的剖面示意圖。請先參閱第1A圖,首先,提供基板110,並將金屬奈米線122塗佈於基板110的表面以形成金屬奈米線層120。金屬奈米線層120可例如但不限於奈米銀線層、奈米金線層或奈米銅線層。在一些實施方式中,可將含有金屬奈米線122的分散液或漿料塗佈於基板110上,並加以固化/乾燥,以使金屬奈米線122附著於基板110的表面,進而成型為設置於基板110上的金屬奈米線層120。在上述固化/乾燥步驟後,分散液或漿料中之溶劑等物質會揮發,而金屬奈米線122可以隨機的方式分佈於基板110的表面;或者較佳地,金屬奈米線122可固著於基板110的表面而不至脫落,進而形成金屬奈米線層120,且金屬奈米線層120中的金屬奈米線122可彼此接觸以提供連續的電流路徑,進而形成一導電網路(conductive network),亦即金屬奈米線122彼此在交叉(交疊)位置處相互接觸,以形成傳遞電子的路徑。以銀奈米線為例,一根銀奈米線與另一銀奈米線在交叉位置處會形成直接接觸的態樣,故可形成低電阻之傳遞電子的路徑。在一些實施方式中,當一區域或一結構的片電阻大於約108 歐姆/平方時即可被認定為電性絕緣,較佳地是大於約104 歐姆/平方、約3000歐姆/平方、約1000歐姆/平方、約350歐姆/平方或約100歐姆/平方的情況。在一些實施方式中,由銀奈米線所形成之銀奈米線層的片電阻小於約100歐姆/平方。1A to 1C are schematic cross-sectional views of different steps of a method for modifying metal nanowires according to some embodiments of the present disclosure. Please refer to FIG. 1A first. First, a substrate 110 is provided, and metal nanowires 122 are coated on the surface of the substrate 110 to form a metal nanowire layer 120 . The metal nanowire layer 120 can be, for example, but not limited to, a nanosilver wire layer, a nanogold wire layer, or a nanocopper wire layer. In some embodiments, the dispersion or slurry containing the metal nanowires 122 may be coated on the substrate 110 and then cured/dried, so that the metal nanowires 122 are attached to the surface of the substrate 110, and then formed into a The metal nanowire layer 120 is disposed on the substrate 110 . After the above-mentioned curing/drying step, substances such as the solvent in the dispersion or slurry will volatilize, and the metal nanowires 122 may be randomly distributed on the surface of the substrate 110; or preferably, the metal nanowires 122 may be solidified The metal nanowire layer 120 is formed on the surface of the substrate 110 without falling off, and the metal nanowires 122 in the metal nanowire layer 120 can be in contact with each other to provide a continuous current path, thereby forming a conductive network (conductive network), that is, the metal nanowires 122 are in contact with each other at intersecting (overlapping) positions to form a path for transferring electrons. Taking silver nanowires as an example, one silver nanowire and another silver nanowire will form a direct contact state at the intersection position, so a low-resistance path for transferring electrons can be formed. In some embodiments, a region or a structure is considered electrically insulating when the sheet resistance is greater than about 10 8 ohms/square, preferably greater than about 10 4 ohms/square, about 3000 ohms/square, About 1000 ohms/square, about 350 ohms/square, or about 100 ohms/square. In some embodiments, the sheet resistance of the silver nanowire layer formed from the silver nanowire is less than about 100 ohms/square.

請參閱第1B圖,接著,設置膜層130以覆蓋金屬奈米線122,並控制膜層130的固化程度。在一些實施方式中,可將適當的聚合物塗佈於金屬奈米線122上,使得具有流動狀態/性質的聚合物可滲入至金屬奈米線122之間而形成填充物,進而使得金屬奈米線122嵌入至膜層130中以形成複合結構220。另一方面,可控制聚合物塗佈或固化的條件(例如控制溫度及/或光固化參數)以使聚合物呈現預固化或未完全固化狀態,或進一步使膜層130具有不同的固化程度。舉例而言,可將下層區域(即接近基板110的區域)之膜層130的固化程度調整為大於上層區域(即遠離基板110的區域)之膜層130的固化程度,而上層區域呈現前述預固化或未完全固化狀態。換句話說,在此步驟中,塗佈聚合物以外加膜層130於金屬奈米線122上,而金屬奈米線122會內嵌於預固化或未完全固化狀態的膜層130中以形成複合結構220。Please refer to FIG. 1B . Next, a film layer 130 is disposed to cover the metal nanowires 122 , and the curing degree of the film layer 130 is controlled. In some embodiments, a suitable polymer can be coated on the metal nanowires 122, so that the polymer with a flow state/property can penetrate into the metal nanowires 122 to form fillers, thereby making the metal nanowires 122. The rice noodles 122 are embedded in the film layer 130 to form the composite structure 220 . On the other hand, the conditions of polymer coating or curing (eg, controlling temperature and/or photocuring parameters) can be controlled to render the polymer in a pre-cured or incompletely cured state, or to further enable the film layer 130 to have different degrees of curing. For example, the curing degree of the film layer 130 in the lower region (ie, the region close to the substrate 110 ) can be adjusted to be greater than the curing degree of the film layer 130 in the upper region (ie, the region far from the substrate 110 ), while the upper region exhibits the aforementioned preset Cured or incompletely cured state. In other words, in this step, the polymer coating layer 130 is applied on the metal nanowires 122, and the metal nanowires 122 are embedded in the precured or incompletely cured film layer 130 to form Composite structure 220 .

在一些實施方式中,膜層130可例如包括絕緣材料。舉例而言,絕緣材料可以是非導電的樹脂或其他有機材料,例如可包括但不限於聚丙烯酸酯、環氧樹脂、聚胺基甲酸酯、聚矽烷、聚矽氧、聚(矽-丙烯酸)、聚乙烯、聚丙烯、聚乙烯醇縮丁醛、聚碳酸酯、丙烯腈-丁二烯-苯乙烯共聚物、聚(3,4-伸乙二氧基噻吩)、聚(苯乙烯磺酸)或陶瓷材料。在一些實施方式中,可藉由旋塗、噴塗、印刷或其組合等方式形成膜層130。在一些實施方式中,膜層130的厚度可介於約20奈米至約10微米之間、約50奈米至約200奈米之間或約30至約100奈米之間,例如膜層130的厚度可例如是約90奈米或約100奈米。應瞭解到,為簡潔且清楚地表達本揭露的內容,第1B圖簡單地將金屬奈米線層120與膜層130繪製成一整體的結構層,但本揭露不以此為限,金屬奈米線層120與膜層130亦可能構成其他類型的結構層(例如上下疊置的結構)。In some embodiments, the membrane layer 130 may include, for example, an insulating material. For example, the insulating material may be a non-conductive resin or other organic material, such as, but not limited to, polyacrylate, epoxy, polyurethane, polysilane, polysiloxane, poly(silicon-acrylic) , polyethylene, polypropylene, polyvinyl butyral, polycarbonate, acrylonitrile-butadiene-styrene copolymer, poly(3,4-ethylenedioxythiophene), poly(styrenesulfonic acid) ) or ceramic materials. In some embodiments, the film layer 130 may be formed by spin coating, spray coating, printing, or a combination thereof. In some embodiments, the thickness of the film layer 130 may be between about 20 nanometers to about 10 micrometers, between about 50 nanometers and about 200 nanometers, or between about 30 nanometers and about 100 nanometers, such as a film layer The thickness of 130 may be, for example, about 90 nanometers or about 100 nanometers. It should be understood that, in order to express the content of the present disclosure concisely and clearly, FIG. 1B simply draws the metal nanowire layer 120 and the film layer 130 as an integral structural layer, but the present disclosure is not limited to this. The wire layer 120 and the film layer 130 may also form other types of structural layers (eg, a structure stacked on top of each other).

在一些實施方式中,控制聚合物之固化程度的方法可以是採用不同能量之固化條件來進行,以使膜層130達到預固化或未完全固化狀態。膜層的固化程度可利用膜層於固化時之鍵結變化來判斷,也就是說,膜層的固化程度可定義為膜層之鍵結強度對完全固化之膜層的鍵結強度的比值(在本實施方式中以百分比表示)。舉例而言,針對一市售商品的膜層材料,原本須採用約500mJ的光能量於低氧環境下照射約4分鐘才能達到完全固化,而本實施方式採用約500mJ的光能量於低氧環境下照射約2分鐘後,以紅外線光譜法所量測到的鍵結強度為完全固化之膜層的鍵結強度的約95%,代表此時膜層達到約95%之總體固化量的固化程度,也因此定義該固化條件下所獲得的膜層為約95%之總體固化量的固化狀態。In some embodiments, the method of controlling the curing degree of the polymer may be performed by using curing conditions of different energies, so that the film layer 130 can reach a pre-cured or incompletely cured state. The curing degree of the film layer can be judged by the bonding change of the film layer during curing, that is to say, the curing degree of the film layer can be defined as the ratio of the bonding strength of the film layer to the bonding strength of the fully cured film layer ( In this embodiment, it is expressed as a percentage). For example, for a film layer material of a commercial product, it was originally required to use a light energy of about 500 mJ in a low oxygen environment for about 4 minutes to achieve complete curing, but this embodiment uses a light energy of about 500 mJ in a low oxygen environment. After being irradiated for about 2 minutes, the bond strength measured by infrared spectroscopy is about 95% of the bond strength of the fully cured film layer, representing the degree of curing at which the film layer reaches about 95% of the total curing amount. , and thus define the cured state of the film layer obtained under the curing conditions to be about 95% of the total cured amount.

在一些實施方式中,可控制膜層130在不同的深度(即厚度)有不同的固化狀態。具體而言,可在膜層130進行固化時通入氣體,使得膜層130的頂部與底部之氣體濃度不同,進而促使膜層130之頂部的固化反應產生氣體阻絕固化的現象,造成膜層130具有不同固化程度的第一層區域及第二層區域。舉例而言,第二層區域可位於膜層130的底部且為固化程度較高的區域,而第一層區域可位於膜層130的頂部且為固化程度較低的區域。在一些實施方式中,可控制在固化時所通入之氣體(例如氧氣)的濃度及/或所給予的固化能量,來使膜層130在不同的深度具有不同的固化狀態。在一些實施方式中,氣體的濃度可例如是約20%、約10%、約3%或小於約1%,而固化能量可依據膜層130的材質進行選擇,例如是介於約250mJ至約1000mJ之間的紫外光能量。在一些實施方式中,當氣體的濃度越大,在膜層130的頂部所發生之氧氣阻絕固化的現象越為顯著,進而使得第一層區域的厚度越大,而第二層區域的厚度越小。舉例而言,第一層區域之厚度由大至小所對應之通入氣體的濃度依序為約20%、約10%、約3%以及小於約1%。在一些實施方式中,當通入濃度為約20%的氧氣,並給予約500mJ的固化能量時,第一層區域的固化程度為約60%,且其厚度為約23.4奈米(即占膜層130之總厚度的約12%);而第二層區域的固化程度介於約99%至約100%之間,且其厚度為約168.1奈米(即占膜層130之總厚度的約88%)。在一些實施方式中,當通入濃度為約20%的氧氣,並給予約1000mJ的固化能量時,第一層區域的厚度為約8.8奈米(即占膜層130之總厚度的約5%);而第二層區域的厚度為約195.9奈米(即占膜層130之總厚度的約95%)。In some embodiments, the controllable film layer 130 has different curing states at different depths (ie, thicknesses). Specifically, gas can be introduced into the film layer 130 during curing, so that the gas concentrations at the top and bottom of the film layer 130 are different, thereby promoting the curing reaction on the top of the film layer 130 to produce a gas barrier curing phenomenon, causing the film layer 130 A first layer region and a second layer region with different degrees of curing. For example, the second layer region can be located at the bottom of the film layer 130 and is a more cured region, while the first layer region can be located at the top of the film layer 130 and is a less cured region. In some embodiments, the concentration of gas (eg, oxygen) introduced and/or the curing energy given during curing can be controlled, so that the film layer 130 has different curing states at different depths. In some embodiments, the concentration of the gas may be, for example, about 20%, about 10%, about 3%, or less than about 1%, and the curing energy may be selected according to the material of the film layer 130, for example, between about 250 mJ to about UV light energy between 1000mJ. In some embodiments, the greater the concentration of the gas, the more pronounced the oxygen-barrier curing phenomenon that occurs on the top of the film layer 130 , resulting in the greater the thickness of the first layer region and the greater the thickness of the second layer region. Small. For example, the concentration of the passing gas corresponding to the thickness of the first layer region from large to small is about 20%, about 10%, about 3% and less than about 1% in sequence. In some embodiments, when oxygen is introduced at a concentration of about 20% and given a curing energy of about 500 mJ, the first layer region is about 60% cured and has a thickness of about 23.4 nanometers (i.e. about 12% of the total thickness of the layer 130); and the second layer region has a degree of cure between about 99% and about 100% and a thickness of about 168.1 nm (ie, about 168.1 nm of the total thickness of the film layer 130). 88%). In some embodiments, the thickness of the first layer region is about 8.8 nanometers (ie, about 5% of the total thickness of the film layer 130 , when oxygen is introduced at a concentration of about 20% and given a curing energy of about 1000 mJ). ); and the thickness of the second layer region is about 195.9 nm (ie, about 95% of the total thickness of the film layer 130 ).

值得說明的是,本揭露偏重於討論外加於金屬奈米線122的膜層130,並透過控制膜層130的固化程度或固化深度來使披覆結構140(未繪示於第1B圖中,具體結構請先參閱第1C圖)可沿著金屬奈米線122的表面生長,以成型於金屬奈米線122與膜層130的界面(此部分將於下文中進行詳細的說明)。在前述含有金屬奈米線122之分散液或漿料的塗佈步驟中,分散液或漿料中亦可能含有聚合物等類似組成,但其並非本揭露的重點。在一些實施方式中,膜層130的固化程度可控制在約0%、約30%、約60%、約75%、約95%、約98%、約0%至約95%、約0%至約98%、約95%至約98%、約60%至約98%或約60%至約75%的狀態。如前所述,本揭露所指的「預固化或未完全固化」可定義為該膜層的鍵結強度不同於完全固化之膜層的鍵結強度,亦即兩者的比值並非100%,便屬於本揭露所涵蓋之範疇。It should be noted that the present disclosure focuses on the discussion of the film layer 130 applied to the metal nanowires 122 , and the capping structure 140 (not shown in FIG. 1B , the cladding structure 140 (not shown in FIG. For the specific structure, please refer to FIG. 1C first.) It can be grown along the surface of the metal nanowire 122 to form the interface between the metal nanowire 122 and the film layer 130 (this part will be described in detail below). In the aforementioned coating step of the dispersion or slurry containing the metal nanowires 122 , the dispersion or slurry may also contain polymers and the like, but this is not the focus of the present disclosure. In some embodiments, the curing degree of the film layer 130 can be controlled at about 0%, about 30%, about 60%, about 75%, about 95%, about 98%, about 0% to about 95%, about 0% to a state of about 98%, about 95% to about 98%, about 60% to about 98%, or about 60% to about 75%. As mentioned above, "pre-cured or incompletely cured" referred to in the present disclosure can be defined as the bonding strength of the film layer is different from that of the fully cured film layer, that is, the ratio of the two is not 100%, fall within the scope of this disclosure.

請參閱1C圖,隨後,進行改質步驟以形成包括複數個改質後之金屬奈米線122的金屬奈米線層120。詳細而言,經過改質後,初始之金屬奈米線122的至少一部份會被改質而在其表面形成披覆結構140,進而形成改質後的金屬奈米線122。應瞭解到,在第1B圖及第1C圖中分別使用不同的網點來表示改質前後的金屬奈米線122,且於後續的圖式中將直接使用如第1B圖及第1C圖中的網點來分別表示改質前後的金屬奈米線122。在一些實施方式中,可利用化學鍍/電解的方式形成披覆結構140,而披覆結構140可例如是包括導電材料的層狀結構、島狀突起結構、點狀突起結構或其組合。在一些實施方式中,導電材料可包括銀、金、鉑、鎳、銅、銥、銠、鈀、鋨、包括前述材料的合金或不包括前述材料的合金。在一些實施方式中,披覆結構140的披覆率可占金屬奈米線122之總表面積的約80%以上、約90%至約95%、約90%至約99%或約90%至約100%。應瞭解到,當披覆結構140的披覆率為100%時,代表初始之金屬奈米線122的表面完全沒有被裸露。在一些實施方式中,披覆結構140可為由單一導電材料所製成的單層結構,例如化學鍍銅層、電鍍銅層或化學鍍銅鎳合金層;或者披覆結構140亦可為由兩種以上的導電材料所製成的兩層或多層結構,例如先形成化學鍍銅層,接著再形成化學鍍銀層。Referring to FIG. 1C , then, a modification step is performed to form a metal nanowire layer 120 including a plurality of modified metal nanowires 122 . In detail, after the modification, at least a part of the original metal nanowire 122 is modified to form the cladding structure 140 on the surface thereof, thereby forming the modified metal nanowire 122 . It should be understood that, in FIG. 1B and FIG. 1C, different dots are used to represent the metal nanowires 122 before and after modification, and in the subsequent drawings, those in FIG. 1B and FIG. 1C will be directly used. The dots represent the metal nanowires 122 before and after modification, respectively. In some embodiments, the cladding structure 140 may be formed by electroless plating/electrolysis, and the cladding structure 140 may be, for example, a layered structure including a conductive material, an island-shaped protrusion structure, a dot-shaped protrusion structure, or a combination thereof. In some embodiments, the conductive material may include silver, gold, platinum, nickel, copper, iridium, rhodium, palladium, osmium, alloys including or not including the foregoing. In some embodiments, the coverage of the cladding structure 140 may be greater than about 80%, about 90% to about 95%, about 90% to about 99%, or about 90% to about 90% of the total surface area of the metal nanowire 122 about 100%. It should be understood that when the coverage ratio of the cladding structure 140 is 100%, the surface of the initial metal nanowire 122 is not exposed at all. In some embodiments, the cladding structure 140 can be a single-layer structure made of a single conductive material, such as an electroless copper layer, an electroless copper layer, or an electroless copper-nickel alloy layer; or the cladding structure 140 can also be made of For a two-layer or multi-layer structure made of two or more conductive materials, for example, an electroless copper plating layer is formed first, followed by an electroless silver plating layer.

在一些實施方式中,可製備化學鍍銅溶液(包括銅離子溶液、螯合劑、鹼劑、還原劑緩衝劑及穩定劑等),並將金屬奈米線122與膜層130浸入化學鍍銅溶液中。化學鍍銅溶液可滲入預固化或未完全固化的膜層130中,並利用毛細現象與金屬奈米線122的表面接觸,同時利用金屬奈米線122作為催化點或成核點,以利於銅的析出,進而將化學鍍銅層沉積在金屬奈米線122上以形成披覆結構140。披覆結構140大致上會依照金屬奈米線122的初始型態進行生長,並隨著改質時間的增加而形成包覆金屬奈米線122的結構。相對地,在複合結構220中沒有金屬奈米線122的位置則不會有銅的析出,也就是說,經過良好的控制,披覆結構140皆形成在金屬奈米線122與膜層130的界面上,而膜層130中不具有未接觸金屬奈米線122的表面而單獨存在的披覆結構130。因此,在改質步驟後,導電網路中的金屬奈米線122會被披覆結構140所包覆,且披覆結構140會位於金屬奈米線122與膜層130所形成的界面上。換句話說,金屬奈米線122與膜層130之間會間隔有披覆結構140。披覆結構140與其所包覆的金屬奈米線122可視為一整體,而該整體間的空隙仍是由膜層130的材料所佔據。In some embodiments, an electroless copper plating solution (including a copper ion solution, a chelating agent, an alkali agent, a reducing agent buffer, a stabilizer, etc.) can be prepared, and the metal nanowires 122 and the film layer 130 can be immersed in the electroless copper plating solution middle. The electroless copper plating solution can penetrate into the pre-cured or incompletely cured film layer 130, and use the capillary phenomenon to contact the surface of the metal nanowires 122, and at the same time use the metal nanowires 122 as catalytic points or nucleation points to facilitate copper Then, an electroless copper plating layer is deposited on the metal nanowire 122 to form the capping structure 140 . The cladding structure 140 is generally grown according to the initial state of the metal nanowire 122 , and a structure covering the metal nanowire 122 is formed as the modification time increases. On the other hand, in the composite structure 220 where there is no metal nanowire 122, there is no copper precipitation. That is to say, after good control, the cladding structure 140 is formed between the metal nanowire 122 and the film layer 130. On the interface, the film layer 130 does not have the cladding structure 130 that does not contact the surface of the metal nanowire 122 and exists alone. Therefore, after the modification step, the metal nanowires 122 in the conductive network are covered by the cladding structure 140 , and the cladding structure 140 is located on the interface formed by the metal nanowires 122 and the film layer 130 . In other words, the cladding structure 140 is spaced between the metal nanowire 122 and the film layer 130 . The cladding structure 140 and the metal nanowires 122 covered by it can be regarded as a whole, and the gap between the whole is still occupied by the material of the film layer 130 .

在一些實施方式中,膜層130與化學鍍溶液/電解溶液可為相互搭配的材質,例如可選用不耐鹼性的聚合物製作膜層130,而化學鍍溶液可選用鹼性溶液。因此在此步驟中,除了利用前述膜層130的預固化或未完全固化狀態,更可利用化學鍍溶液攻擊(類似蝕刻)預固化或未完全固化的膜層130,以利於進行前述的改質步驟。In some embodiments, the film layer 130 and the electroless plating solution/electrolytic solution can be made of compatible materials. For example, a non-alkali-resistant polymer can be used to make the film layer 130, and the electroless plating solution can be made of an alkaline solution. Therefore, in this step, in addition to using the pre-cured or incompletely cured state of the aforementioned film layer 130, the pre-cured or incompletely cured film layer 130 can be attacked (similar to etching) by an electroless plating solution, so as to facilitate the aforementioned modification. step.

以下進行改質步驟的原理說明,但並不用以限制本揭露。在金屬奈米線122與膜層130浸入化學鍍溶液/電解溶液的初期,溶液會先攻擊預固化或未完全固化的膜層130,當溶液接觸到金屬奈米線122時,金屬離子(例如銅離子)便會以金屬奈米線122(例如奈米銀線)作為晶種開始生長,並隨浸泡時間增長而在金屬奈米線122的表面成長為前述披覆結構140。另一方面,膜層130在上述反應過程中可作為控制層或限位層,以將披覆結構140的生長反應限制在金屬奈米線122與膜層130的界面處,使得披覆結構140得以受控而均勻地生長。如此一來,可使得本揭露之改質後的金屬奈米線122在感測/傳遞訊號時具有較佳的一致性。The principle of the modification step is described below, but is not intended to limit the present disclosure. In the initial stage when the metal nanowires 122 and the film layer 130 are immersed in the electroless plating solution/electrolytic solution, the solution will attack the pre-cured or incompletely cured film layer 130 first. When the solution contacts the metal nanowires 122, metal ions (eg copper ions) will start to grow using the metal nanowires 122 (eg, nanosilver nanowires) as seeds, and grow into the aforementioned cladding structure 140 on the surface of the metal nanowires 122 as the soaking time increases. On the other hand, the film layer 130 can be used as a control layer or a confinement layer in the above reaction process, so as to limit the growth reaction of the cladding structure 140 to the interface between the metal nanowire 122 and the film layer 130 , so that the cladding structure 140 controlled and uniform growth. In this way, the modified metal nanowires 122 of the present disclosure can have better consistency when sensing/transmitting signals.

在一些實施方式中,可接著進行固化步驟,以利用光、熱或其他方式進行膜層130的完全固化。在前述改質步驟中,披覆結構140會在每一根金屬奈米線122的表面成型,並包覆每一根金屬奈米線122的整體表面並向外成長。在一些實施方式中,可選用高導電材料來製作披覆結構140,例如使用銅作為披覆結構140的材料以覆蓋奈米銀線的表面,並使披覆結構140位於奈米銀線與膜層130之間的界面。值得說明的是,雖然銀金屬材料的導電率高於銅金屬材料的導電率,但由於奈米銀線的尺寸及相互接觸態樣等的因素,使得銀奈米線層的整體導電度較低(但電阻仍低並足以傳遞電訊號),而在改質步驟後,覆蓋有披覆結構140之奈米銀線(即改質後的金屬奈米線122)的導電率會高於未改質的奈米銀線。換句話說,改質後的金屬奈米線層120可形成低阻值的導電層,且相較於未改質的金屬奈米線層120,改質後的金屬奈米線層120的面電阻可降低約100倍至約10000倍。上述導電層即可用於製作具有各種用途的電極結構,例如可撓領域的導電基板、無線充電線圈或天線結構。具體而言,電極結構可至少包括金屬奈米線122以及額外披覆于金屬奈米線122的膜層130,且至少一部分或全部的金屬奈米線122的表面(即金屬奈米線122與膜層130相對應的界面)具有披覆結構140(即披覆層)。藉由披覆層的引入,可提高金屬奈米線層120的導電度。在一些實施方式中,由於銅金屬材料是沿著金屬奈米線122的表面(即金屬奈米線122與膜層130相對應的界面)生長,故經過施鍍後,所觀察到之銅的型態會相當類似於金屬奈米線122的初始型態(例如線狀結構),且銅會均勻地生長而形成尺寸(例如厚度)相近的外層結構。In some embodiments, a curing step may be followed to fully cure the film layer 130 using light, heat, or other means. In the aforementioned modification step, the cladding structure 140 is formed on the surface of each metal nanowire 122 , and covers the entire surface of each metal nanowire 122 and grows outward. In some embodiments, a highly conductive material can be used to fabricate the cladding structure 140 , for example, copper is used as the material of the cladding structure 140 to cover the surface of the silver nanowires, and the cladding structure 140 is located between the silver nanowires and the film. Interface between layers 130 . It is worth noting that although the conductivity of silver metal material is higher than that of copper metal material, the overall conductivity of the silver nanowire layer is relatively low due to factors such as the size of the silver nanowires and their mutual contact patterns. (But the resistance is still low enough to transmit electrical signals), and after the modification step, the conductivity of the silver nanowires covered with the capping structure 140 (ie, the modified metal nanowires 122 ) is higher than that of the unmodified metal nanowires high-quality silver nanowires. In other words, the modified metal nanowire layer 120 can form a low-resistance conductive layer, and compared with the unmodified metal nanowire layer 120 , the surface of the modified metal nanowire layer 120 The resistance can be reduced by a factor of about 100 to about 10,000. The above conductive layers can be used to fabricate electrode structures with various uses, such as conductive substrates in the flexible field, wireless charging coils or antenna structures. Specifically, the electrode structure may include at least the metal nanowires 122 and a film layer 130 additionally covering the metal nanowires 122 , and at least a part or all of the surface of the metal nanowires 122 (ie the metal nanowires 122 and the The interface corresponding to the film layer 130) has a cladding structure 140 (ie, a cladding layer). By introducing the coating layer, the conductivity of the metal nanowire layer 120 can be improved. In some embodiments, since the copper metal material grows along the surface of the metal nanowire 122 (ie, the interface corresponding to the metal nanowire 122 and the film layer 130 ), after plating, the observed copper The shape will be quite similar to the initial shape of the metal nanowire 122 (eg, wire-like structure), and the copper will grow uniformly to form an outer layer structure of similar size (eg, thickness).

本揭露的前述方法可應用於製作觸控面板,例如但不限於與顯示器搭配使用的觸控面板。更具體而言,請參閱第2A圖及第2B圖,其中第2A圖繪示根據本揭露一些實施方式之觸控面板100的上視示意圖,而第2B圖繪示根據本揭露一些實施方式之第2A圖的觸控面板100沿線段2B-2B截取的剖面示意圖。在一些實施方式中,觸控面板100可包括基板110、周邊引線150以及觸控感應電極170。基板110配置以承載周邊引線150以及觸控感應電極170,且可例如是硬式透明基板或可撓式透明基板。在一些實施方式中,基板110的材料包括但不限於玻璃、壓克力、聚氯乙烯、聚丙烯、聚苯乙烯、聚碳酸酯、環烯烴聚合物、環烯烴共聚物、聚對苯二甲酸乙二醇酯、聚萘二甲酸乙二醇酯、無色聚醯亞胺等透明材料或其組合。在一些實施方式中,可對基板110的表面進行前處理步驟,例如進行表面改質製程或於基板110的表面額外塗佈黏著層或樹脂層,以提升基板110與金屬奈米線122之間的附著力。在一些實施方式中,基板110具有顯示區VA以及周邊區PA,且周邊區PA設置於顯示區VA的側邊。舉例而言,周邊區PA可以是設置於顯示區VA的四周(即涵蓋右側、左側、上側及下側)的框型區域。舉另一例而言,周邊區PA亦可以是設置於顯示區VA的左側及下側的L型區域。The aforementioned method of the present disclosure can be applied to fabricating a touch panel, such as, but not limited to, a touch panel used in conjunction with a display. More specifically, please refer to FIGS. 2A and 2B, wherein FIG. 2A is a schematic top view of the touch panel 100 according to some embodiments of the present disclosure, and FIG. 2B is a schematic diagram of a touch panel 100 according to some embodiments of the present disclosure. 2A is a schematic cross-sectional view of the touch panel 100 taken along the line segment 2B-2B. In some embodiments, the touch panel 100 may include a substrate 110 , peripheral leads 150 and touch sensing electrodes 170 . The substrate 110 is configured to carry the peripheral leads 150 and the touch sensing electrodes 170 , and can be, for example, a rigid transparent substrate or a flexible transparent substrate. In some embodiments, the material of the substrate 110 includes, but is not limited to, glass, acrylic, polyvinyl chloride, polypropylene, polystyrene, polycarbonate, cycloolefin polymers, cycloolefin copolymers, polyterephthalic acid Glycol ester, polyethylene naphthalate, colorless polyimide and other transparent materials or their combination. In some embodiments, pre-treatment steps may be performed on the surface of the substrate 110 , such as performing a surface modification process or additionally coating an adhesive layer or a resin layer on the surface of the substrate 110 to enhance the gap between the substrate 110 and the metal nanowires 122 of adhesion. In some embodiments, the substrate 110 has a display area VA and a peripheral area PA, and the peripheral area PA is disposed on a side of the display area VA. For example, the peripheral area PA may be a frame-shaped area disposed around the display area VA (ie, covering the right side, the left side, the upper side and the lower side). For another example, the peripheral area PA may also be an L-shaped area disposed on the left side and the lower side of the display area VA.

在一些實施方式中,周邊引線150大致位於周邊區PA,而觸控感應電極170大致位於顯示區VA,且周邊引線150與觸控感應電極170大致於顯示區VA與周邊區PA之交界處相互接觸,以彼此電性連接而形成橫跨顯示區VA及周邊區PA的電子傳遞路徑。在一些實施方式中,觸控感應電極170是採用單層的配置,且觸控面板100可透過偵測各個觸控感應電極170自身的電容值變化來得到觸控位置,而周邊引線150可與外部控制器連接以進行觸控或其他訊號的傳遞。在一些實施方式中,觸控感應電極170是以非交錯式的方式排列。舉例而言,觸控感應電極170可以是沿第一方向D1延伸的長條型電極,且多個長條型電極可沿著第二方向D2等距地排列,其中第一方向D1與第二方向D2相互垂直。然而,觸控感應電極170的形狀與排列方式並不以此為限,在其他實施方式中,觸控感應電極170亦可具有其他適當的形狀與排列方式。In some embodiments, the peripheral leads 150 are generally located in the peripheral area PA, and the touch sensing electrodes 170 are generally located in the display area VA, and the peripheral leads 150 and the touch sensing electrodes 170 are approximately at the junction of the display area VA and the peripheral area PA. The contacts are electrically connected to each other to form an electron transfer path across the display area VA and the peripheral area PA. In some embodiments, the touch sensing electrodes 170 are in a single-layer configuration, and the touch panel 100 can obtain the touch position by detecting the change in the capacitance value of each touch sensing electrode 170 itself, and the peripheral leads 150 can be connected with The external controller is connected for touch or other signal transmission. In some embodiments, the touch sensing electrodes 170 are arranged in a non-staggered manner. For example, the touch sensing electrodes 170 may be elongated electrodes extending along the first direction D1, and a plurality of elongated electrodes may be arranged at equal distances along the second direction D2, wherein the first direction D1 and the second The directions D2 are perpendicular to each other. However, the shape and arrangement of the touch sensing electrodes 170 are not limited thereto, and in other embodiments, the touch sensing electrodes 170 may also have other suitable shapes and arrangements.

在一些實施方式中,周邊引線150及觸控感應電極170是由改質後的金屬奈米線122所構成(此處所稱之「改質後的金屬奈米線122」包括金屬奈米線122以及覆蓋於其表面的披覆結構140)。詳細而言,周邊引線150及觸控感應電極170各自包括金屬奈米線122及外加於金屬奈米線122的膜層130,且每一根金屬奈米線122與膜層130的界面實質上具有披覆結構140。具體而言,前述改質後的金屬奈米線122以及外加於改質後之金屬奈米線122的膜層130被圖案化而形成周邊引線150及觸控感應電極170。如此一來,電子可經由相鄰且相互接觸之改質後的金屬奈米線122而在周邊引線150中傳遞、在觸控感應電極170中傳遞、由觸控感應電極170傳遞至周邊引線150或由周邊引線150傳遞至觸控感應電極170。藉由將披覆結構140成型於金屬奈米線122與膜層130之間的界面,以形成改質後的金屬奈米線122,並以改質後的金屬奈米線122來製作觸控面板100的周邊引線150及觸控感應電極170,可有效地降低觸控面板100的面電阻以提升觸控面板100的導電度,並有效地降低觸控面板100的阻容式負載值(resistive capacitive loading,RC loading)。在一些實施方式中,由改質後的金屬奈米線122所製成的觸控感應電極170的阻容式負載值相較於由未改質之金屬奈米線122(即不具有披覆結構140於其表面的金屬奈米線122)所製成的觸控感應電極170的阻容式負載值降低了約10%至約50%。In some embodiments, the peripheral leads 150 and the touch sensing electrodes 170 are formed of the modified metal nanowires 122 (the “modified metal nanowires 122” referred to herein include the metal nanowires 122 and a coating structure 140 covering its surface). In detail, the peripheral lead 150 and the touch sensing electrode 170 each include a metal nanowire 122 and a film layer 130 applied to the metal nanowire 122 , and the interface between each metal nanowire 122 and the film layer 130 is substantially It has a cladding structure 140 . Specifically, the aforementioned modified metal nanowires 122 and the film layer 130 applied to the modified metal nanowires 122 are patterned to form peripheral leads 150 and touch sensing electrodes 170 . In this way, electrons can be transferred in the peripheral leads 150 , in the touch sensing electrodes 170 , and transferred from the touch sensing electrodes 170 to the peripheral leads 150 via the modified metal nanowires 122 adjacent to each other. Or transmitted to the touch sensing electrodes 170 by the peripheral leads 150 . By forming the cladding structure 140 on the interface between the metal nanowire 122 and the film layer 130, the modified metal nanowire 122 is formed, and the modified metal nanowire 122 is used to fabricate a touch control The peripheral leads 150 and the touch sensing electrodes 170 of the panel 100 can effectively reduce the sheet resistance of the touch panel 100 to improve the conductivity of the touch panel 100 and effectively reduce the resistive load value of the touch panel 100 capacitive loading, RC loading). In some embodiments, the resistive-capacitive load value of the touch sensing electrodes 170 made of the modified metal nanowires 122 is compared with that of the unmodified metal nanowires 122 (ie, without coating The resistive-capacitive load value of the touch sensing electrodes 170 formed by the metal nanowires 122) on the surface of the structure 140 is reduced by about 10% to about 50%.

在一些實施方式中,觸控感應電極170具有由複數個細線L交錯而成的網格狀圖案。詳細而言,改質後的金屬奈米線122及外加於改質後之金屬奈米線122的膜層130被圖案化以形成由複數個細線L交錯而成的網格狀圖案,而所形成的網格狀圖案即為觸控感應電極170的電極圖案。換句話說,改質後的金屬奈米線122以及外加於改質後之金屬奈米線122的膜層130皆存在觸控感應電極170之網格狀圖案的每一條細線L中。值得說明的是,由於改質後的金屬奈米線122具有披覆結構140,因此其相較於未改質的金屬奈米線122具有較低的透光率(即波長為約400nm至約700nm的可見光穿透率)以及較高的霧度,而藉由將觸控感應電極170圖案化以形成由複數個細線L交錯而成的網格狀圖案,可避免改質後的金屬奈米線122影響觸控感應電極170的透光率及霧度,進而使得觸控面板100的顯示區VA可維持良好的光學特性。具體而言,本揭露之具有網格狀圖案的觸控感應電極170可使得觸控面板100的顯示區VA具有大於約88%的透光率,符合使用者的需求。另一方面,本揭露之具有網格狀圖案的觸控感應電極170可使得觸控面板100的顯示區VA具有小於約3.0的霧度,且較佳地可小於約2.5、約2.0或約1.5。In some embodiments, the touch sensing electrodes 170 have a grid-like pattern formed by a plurality of thin lines L interlaced. In detail, the modified metal nanowires 122 and the film layer 130 applied to the modified metal nanowires 122 are patterned to form a grid pattern formed by a plurality of thin lines L interlaced, and the The formed grid pattern is the electrode pattern of the touch sensing electrode 170 . In other words, the modified metal nanowires 122 and the film layer 130 applied to the modified metal nanowires 122 are present in each thin line L of the grid pattern of the touch sensing electrode 170 . It is worth noting that since the modified metal nanowire 122 has the cladding structure 140, it has a lower light transmittance (ie, the wavelength is about 400 nm to about 700nm visible light transmittance) and higher haze, and by patterning the touch sensing electrodes 170 to form a grid pattern formed by a plurality of fine lines L interlaced, the modified metal nanometers can be avoided. The lines 122 affect the light transmittance and haze of the touch sensing electrodes 170 , so that the display area VA of the touch panel 100 can maintain good optical properties. Specifically, the touch sensing electrodes 170 with the grid pattern of the present disclosure can make the display area VA of the touch panel 100 have a transmittance greater than about 88%, which meets the needs of users. On the other hand, the touch sensing electrodes 170 with the grid pattern of the present disclosure can make the display area VA of the touch panel 100 have a haze less than about 3.0, preferably less than about 2.5, about 2.0 or about 1.5 .

在一些實施方式中,每一條細線L的線寬W1介於約1微米至約10微米之間,以提供觸控感應電極170較佳的透光率,並提供圖案化的便利性。詳細而言,當每一條細線L的線寬W1大於約10微米時,可能使得觸控感應電極170具有較差的透光率,進而影響觸控面板100之顯示區VA所表現出的光學特性;而當每一條細線L的線寬W1小於約1微米時,可能提升圖案化的困難度,進而導致製程上的不便。在一些實施方式中,相鄰之細線L之間的距離X1 (即線距X1)介於約1微米至約10微米之間,以提供觸控感應電極170較佳的透光率及導電度。詳細而言,當線距X1大於約10微米時,可能使得網格狀圖案的排列過於稀疏,造成電子傳遞路徑不足,進而導致觸控感應電極170的面電阻過大且導電度過低;而當線距X1小於約1微米時,則可能使得網格狀圖案的排列過於緊密,導致觸控感應電極170的透光率過低,進而影響觸控面板100之顯示區VA所表現出的光學特性。在一些實施方式中,細線L可例如是以等距的方式排列,亦即每一個網格可具有相同的尺寸(例如長度及寬度)。在一些實施方式中,每一個網格的形狀可例如是矩形、正方形、菱形或其他適當的形狀。藉由上述設置,本揭露的觸控感應電極170除了具有良好的透光率之外,亦可以具有良好的導電度。具體而言,本揭露之具有網格狀圖案的觸控感應電極170可使得觸控面板100之顯示區VA的面電阻介於約8歐姆/平方至約42歐姆/平方之間,其相較於由未改質之金屬奈米線122所形成的觸控面板之顯示區VA的面電阻降低了約20%至約30%。In some embodiments, the line width W1 of each thin line L is between about 1 μm and about 10 μm, so as to provide better light transmittance of the touch sensing electrode 170 and facilitate patterning. In detail, when the line width W1 of each thin line L is greater than about 10 μm, the touch sensing electrode 170 may have poor light transmittance, thereby affecting the optical properties exhibited by the display area VA of the touch panel 100 ; However, when the line width W1 of each thin line L is less than about 1 micrometer, the difficulty of patterning may be increased, thereby causing inconvenience in the manufacturing process. In some embodiments, the distance X1 between adjacent thin lines L (ie, the line distance X1) is between about 1 micrometer and about 10 micrometers, so as to provide better light transmittance and conductivity of the touch sensing electrodes 170 . In detail, when the line distance X1 is greater than about 10 μm, the arrangement of the grid-like patterns may be too sparse, resulting in insufficient electron transfer paths, thereby causing the touch sensing electrodes 170 to have too high sheet resistance and too low conductivity; and when When the line spacing X1 is less than about 1 μm, the grid pattern may be arranged too closely, resulting in too low light transmittance of the touch sensing electrodes 170 , thereby affecting the optical properties exhibited by the display area VA of the touch panel 100 . In some embodiments, the thin lines L may be arranged in an equidistant manner, for example, that is, each grid may have the same dimensions (eg, length and width). In some embodiments, the shape of each grid may be, for example, a rectangle, square, diamond, or other suitable shape. With the above arrangement, the touch sensing electrode 170 of the present disclosure can not only have good light transmittance, but also have good conductivity. Specifically, the touch sensing electrodes 170 with the grid pattern of the present disclosure can make the sheet resistance of the display area VA of the touch panel 100 range from about 8 ohms/square to about 42 ohms/square, which is relatively The sheet resistance of the display area VA of the touch panel formed by the unmodified metal nanowires 122 is reduced by about 20% to about 30%.

在一些實施方式中,周邊引線150的線寬W2介於約8微米至約10微米之間,以使周邊引線150具有良好的導電度,並提供圖案化的便利性。詳細而言,當周邊引線150的線寬W2小於約8微米時,可能導致周邊引線150的面電阻過大且導電度過低,並可能提升圖案化的困難度,進而導致製程上的不便。在一些實施方式中,周邊引線150的線寬W2可設計為與觸控感應電極170中之每一條細線L的線寬W1相同。在一些實施方式中,相鄰之周邊引線150之間的距離X2(即線距X2)介於約5微米至約20微米之間,或較佳介於3微米至約20微米之間,以使本揭露的觸控面板100相較於傳統的觸控面板減少約20%或更多的邊框尺寸(例如周邊區PA的寬度),進而達到顯示器的窄邊框需求。具體而言,本揭露之觸控面板100的周邊區PA的寬度可小於約2毫米。藉由上述設置,本揭露的周邊引線150可具有良好的導電度。具體而言,本揭露的周邊引線150可使觸控面板100之周邊區PA的面電阻介於約0.10歐姆/平方至約0.13歐姆/平方之間,其相較於由未改質之金屬奈米線122所形成的觸控面板之周邊區PA的面電阻降低了約20%至約50%。In some embodiments, the line width W2 of the peripheral lead 150 is between about 8 micrometers and about 10 micrometers, so that the peripheral lead 150 has good conductivity and facilitates patterning. In detail, when the line width W2 of the peripheral lead 150 is less than about 8 μm, the sheet resistance of the peripheral lead 150 may be too large and the conductivity may be too low, which may increase the difficulty of patterning, thereby causing inconvenience in the process. In some embodiments, the line width W2 of the peripheral lead 150 can be designed to be the same as the line width W1 of each thin line L in the touch sensing electrode 170 . In some embodiments, the distance X2 between adjacent peripheral leads 150 (ie, the line distance X2) is between about 5 micrometers to about 20 micrometers, or preferably between 3 micrometers and about 20 micrometers, so that the Compared with the conventional touch panel, the touch panel 100 of the present disclosure reduces the frame size (eg, the width of the peripheral area PA) by about 20% or more, thereby meeting the narrow frame requirement of the display. Specifically, the width of the peripheral area PA of the touch panel 100 of the present disclosure may be less than about 2 mm. With the above arrangement, the peripheral lead 150 of the present disclosure can have good conductivity. Specifically, the peripheral lead 150 of the present disclosure can enable the sheet resistance of the peripheral area PA of the touch panel 100 to be between about 0.10 ohm/square to about 0.13 ohm/square, which is compared with the unmodified metal nanowire The sheet resistance of the peripheral area PA of the touch panel formed by the rice wires 122 is reduced by about 20% to about 50%.

請先參閱第3A圖至第3D圖,其繪示根據本揭露一些實施方式之觸控面板100的製作方法在不同步驟的剖面示意圖,其剖面位置與第2B圖之剖面位置相同。觸控面板100的製作方法包括步驟S10至步驟S16,且步驟S10至步驟S16可為依序進行。在步驟S10中,提供具有事先定義之周邊區PA與顯示區VA的基板110,並設置未改質之金屬奈米線122於基板110上,以於周邊區PA及顯示區VA形成金屬奈米線層120。在步驟S12中,設置膜層130於未改質的金屬奈米線122上,使得膜層130覆蓋未改質的金屬奈米線122,且膜層130為預固化或未完全固化狀態。在步驟S14中,進行圖案化步驟,以形成具有圖案的金屬奈米線層120,其中位於周邊區PA的金屬奈米線層120被圖案化以形成周邊引線150,而位於顯示區VA的金屬奈米線層120被圖案化以形成觸控感應電極170。在步驟S16中,進行改質步驟,以將披覆結構140成型於金屬奈米線122上,使得位於周邊區PA的周邊引線150以及位於顯示區VA的觸控感應電極170皆是由改質後的金屬奈米線122所構成。在下文中,將針對上述步驟進行更詳細的說明。Please refer to FIGS. 3A to 3D , which are schematic cross-sectional views at different steps of the manufacturing method of the touch panel 100 according to some embodiments of the present disclosure, and the cross-sectional positions are the same as those of FIG. 2B . The manufacturing method of the touch panel 100 includes steps S10 to S16 , and the steps S10 to S16 may be performed in sequence. In step S10 , a substrate 110 having a predefined peripheral area PA and a display area VA is provided, and unmodified metal nanowires 122 are disposed on the substrate 110 to form metal nanowires in the peripheral area PA and the display area VA Line layer 120 . In step S12 , the film layer 130 is disposed on the unmodified metal nanowires 122 , so that the film layer 130 covers the unmodified metal nanowires 122 , and the film layer 130 is in a pre-cured or incompletely cured state. In step S14, a patterning step is performed to form the metal nanowire layer 120 with a pattern, wherein the metal nanowire layer 120 in the peripheral area PA is patterned to form the peripheral wiring 150, and the metal nanowire layer 120 in the display area VA is patterned The nanowire layer 120 is patterned to form the touch sensing electrodes 170 . In step S16, a modification step is performed to form the cladding structure 140 on the metal nanowire 122, so that the peripheral leads 150 in the peripheral area PA and the touch sensing electrodes 170 in the display area VA are both modified The latter metal nanowires 122 are formed. In the following, the above steps will be described in more detail.

請先參閱第3A圖,將至少含有金屬奈米線122的金屬奈米線層120(例如奈米銀線層、奈米金線層或奈米銅線層)塗佈於基板110的周邊區PA以及顯示區VA。在一些實施方式中,可將具有金屬奈米線122的分散液或漿料以塗佈的方式形成於基板110上,並加以固化/乾燥,以使金屬奈米線122附著於基板110的表面,進而成型為設置於基板110上的金屬奈米線層120。在上述固化/乾燥步驟後,分散液或漿料中之溶劑等物質會揮發,而金屬奈米線122可以隨機的方式分佈於基板110的表面;或者較佳地,金屬奈米線122可固著於基板110的表面而不至脫落,進而形成金屬奈米線層120,且金屬奈米線層120中的金屬奈米線122可彼此接觸以提供連續的電流路徑,進而形成一導電網路。換句話說,金屬奈米線122彼此在交叉位置處相互接觸,以形成傳遞電子的路徑。以銀奈米線為例,一根銀奈米線與另一銀奈米線在交叉位置處會形成直接接觸的態樣(即銀-銀的接觸界面),故可形成低電阻之傳遞電子的路徑,而後續的改質步驟並不會影響或改變上述「銀-銀接觸」的低電阻結構,且更會在金屬奈米線122的表面包覆高導電度的披覆結構140,故可提升終端產品的電特性。Referring to FIG. 3A first, a metal nanowire layer 120 (such as a nanosilver layer, a nanogold layer or a nanocopper layer) containing at least metal nanowires 122 is coated on the peripheral area of the substrate 110 PA and display area VA. In some embodiments, the dispersion or slurry with the metal nanowires 122 can be formed on the substrate 110 by coating, and then cured/dried, so that the metal nanowires 122 can be attached to the surface of the substrate 110 , and then formed into a metal nanowire layer 120 disposed on the substrate 110 . After the above-mentioned curing/drying step, substances such as the solvent in the dispersion or slurry will volatilize, and the metal nanowires 122 may be randomly distributed on the surface of the substrate 110; or preferably, the metal nanowires 122 may be solidified The metal nanowire layer 120 is formed on the surface of the substrate 110 without falling off, and the metal nanowires 122 in the metal nanowire layer 120 can be in contact with each other to provide a continuous current path, thereby forming a conductive network . In other words, the metal nanowires 122 are in contact with each other at intersecting positions to form a path for transferring electrons. Taking silver nanowires as an example, a silver nanowire and another silver nanowire will form a direct contact state at the intersection position (ie, the silver-silver contact interface), so it can form a low-resistance electron transfer The following modification steps will not affect or change the low-resistance structure of the above-mentioned “silver-silver contact”, and the surface of the metal nanowire 122 will be coated with a high-conductivity cladding structure 140. Therefore, The electrical characteristics of the end product can be improved.

在一些實施方式中,分散液或漿料包括溶劑,進而將金屬奈米線122均勻地分散於其中。具體而言,溶劑例如是水、醇類、酮類、醚類、烴類、芳香類溶劑(苯、甲苯或二甲苯等)或上述任意之組合。在一些實施方式中,分散液更可包括添加劑、介面活性劑及/或黏合劑,進而提升金屬奈米線122與溶劑之間的相容性以及金屬奈米線122於溶劑中的穩定性。具體而言,添加劑、介面活性劑及/或黏合劑可例如是羧甲基纖維素、羥乙基纖維素、羥丙甲纖維素、含氟界面活性劑、磺基琥珀酸酯磺酸酯、硫酸酯、磷酸酯、二磺酸鹽或其組合。含有金屬奈米線122的分散液或漿料可以任何方式成型於基板110的表面,例如但不限於網版印刷、噴頭塗佈或滾輪塗佈等製程。在一些實施方式中,在一些實施方式中,可採用捲對捲(roll to roll)製程將包括有金屬奈米線122分散液或漿料塗佈於連續供應之基板110的表面。In some embodiments, the dispersion or slurry includes a solvent to uniformly disperse the metal nanowires 122 therein. Specifically, the solvent is, for example, water, alcohols, ketones, ethers, hydrocarbons, aromatic solvents (benzene, toluene, xylene, etc.) or any combination thereof. In some embodiments, the dispersion may further include additives, surfactants and/or binders, so as to improve the compatibility between the metal nanowires 122 and the solvent and the stability of the metal nanowires 122 in the solvent. Specifically, additives, surfactants and/or binders can be, for example, carboxymethyl cellulose, hydroxyethyl cellulose, hypromellose, fluorosurfactants, sulfosuccinate sulfonates, Sulfate, phosphate, disulfonate, or a combination thereof. The dispersion or slurry containing the metal nanowires 122 can be formed on the surface of the substrate 110 in any manner, such as but not limited to processes such as screen printing, spray coating or roller coating. In some embodiments, a roll-to-roll process may be employed to apply the dispersion or slurry including the metal nanowires 122 to the surface of the continuously supplied substrate 110 .

應瞭解到,本文中所使用的「金屬奈米線」是一集合名詞,其是指包括多個金屬元素、金屬合金或金屬化合物(包括金屬氧化物)之金屬線的集合,且其中所含有之金屬奈米線的數量,並不影響本揭露所主張的保護範圍。在一些實施方式中,單一金屬奈米線的截面尺寸(例如截面的直徑)可小於500nm,較佳地可小於100nm,且更佳地可小於50nm。在一些實施方式中,金屬奈米線具有大的縱橫比(即長度:截面的直徑)。具體而言,金屬奈米線的縱橫比可介於10至100000之間。更詳細而言,金屬奈米線的縱橫比可大於10,較佳地可大於50,且更佳地可大於100。此外,其他用語例如絲(silk)、纖維(fiber)或管(tube)等同樣具有上述的截面尺寸及縱橫比,亦為本揭露所涵蓋之範疇。It should be understood that "metal nanowires" as used herein is a collective term that refers to a collection of metal wires comprising a plurality of metal elements, metal alloys or metal compounds (including metal oxides), and which contain The number of metal nanowires mentioned above does not affect the scope of protection claimed in this disclosure. In some embodiments, the cross-sectional dimension (eg, the diameter of the cross-section) of a single metal nanowire may be less than 500 nm, preferably less than 100 nm, and more preferably less than 50 nm. In some embodiments, the metal nanowires have a large aspect ratio (ie, length:diameter of the cross-section). Specifically, the aspect ratio of the metal nanowires may be between 10 and 100,000. In more detail, the aspect ratio of the metal nanowire may be greater than 10, preferably greater than 50, and more preferably greater than 100. In addition, other terms such as silk, fiber or tube have the above-mentioned cross-sectional dimensions and aspect ratios, and are also covered by the present disclosure.

在一些實施方式中,可進一步對金屬奈米線122進行後處理,以提高金屬奈米線122在交叉點上的接觸特性(例如提高接觸面積),進而提升其導電度。此後處理可例如包括但不限於加熱、電漿、電暈放電、紫外線、臭氧或壓力等步驟。具體而言,在固化/乾燥以形成金屬奈米線層120後,可使用滾輪以施加壓力於其上。在一些實施方式中,可使用一個或多個滾輪對金屬奈米線層120施加壓力。在一些實施方式中,所施加的壓力可介於約50psi至約3400psi之間,較佳地可介於約100psi至約1000 psi之間、約200psi至約800 psi之間或約300psi至約500 psi之間。在一些實施方式中,可同時對金屬奈米線122進行加熱及加壓步驟的後處理。舉例而言,可透過滾輪施加約10psi至約500 psi的壓力(或較佳地約40psi至約100psi的壓力),並同時將滾輪加熱至約70℃至約200℃(或較佳地約100℃至約175℃),以提高金屬奈米線122的導電度。在一些實施方式中,可將金屬奈米線122暴露於還原劑中進行後處理,例如由奈米銀線組成的金屬奈米線122較佳地可暴露於銀還原劑中進行後處理。在一些實施方式中,銀還原劑可包括例如是硼氫化鈉的硼氫化物、例如是二甲基胺基硼烷的硼氮化合物或例如是氫氣的氣體還原劑。在一些實施方式中,暴露時間可介於約10秒至約30分鐘之間,較佳地可介於約1分鐘至約10分鐘之間。經由上述後處理步驟,可加強金屬奈米線122在交叉點上的接觸強度或面積,進而確保金屬奈米線122在交叉點上的接觸面不受改質處理的影響。In some embodiments, the metal nanowires 122 may be further post-processed to improve the contact characteristics (eg, increase the contact area) of the metal nanowires 122 at the intersections, thereby increasing the electrical conductivity thereof. Post-treatment may include, but is not limited to, steps such as heating, plasma, corona discharge, ultraviolet light, ozone, or pressure, for example. Specifically, after curing/drying to form the metal nanowire layer 120, a roller may be used to apply pressure thereon. In some embodiments, one or more rollers may be used to apply pressure to the metal nanowire layer 120 . In some embodiments, the applied pressure may be between about 50 psi and about 3400 psi, preferably between about 100 psi and about 1000 psi, between about 200 psi and about 800 psi, or between about 300 psi and about 500 psi between psi. In some embodiments, the metal nanowires 122 may be post-treated with the heating and pressing steps at the same time. For example, a pressure of about 10 psi to about 500 psi (or preferably a pressure of about 40 psi to about 100 psi) can be applied through the roller while heating the roller to about 70°C to about 200°C (or preferably about 100°C) °C to about 175 °C) to improve the conductivity of the metal nanowires 122 . In some embodiments, the metal nanowires 122 may be exposed to a reducing agent for post-treatment. For example, the metal nanowires 122 composed of silver nanowires may preferably be exposed to a silver reducing agent for post-treatment. In some embodiments, the silver reducing agent may include a borohydride such as sodium borohydride, a boron nitrogen compound such as dimethylaminoborane, or a gaseous reducing agent such as hydrogen. In some embodiments, the exposure time may be between about 10 seconds and about 30 minutes, preferably between about 1 minute and about 10 minutes. Through the above post-processing steps, the contact strength or area of the metal nanowires 122 at the intersections can be enhanced, thereby ensuring that the contact surfaces of the metal nanowires 122 at the intersections are not affected by the modification treatment.

接著,請參閱第3B圖,設置膜層130於未改質的金屬奈米線122上,使得膜層130覆蓋未改質的金屬奈米線122。在一些實施方式中,塗佈後之膜層130中的聚合物可滲入金屬奈米線122之間而形成填充物,且金屬奈米線122會嵌入膜層130中以形成複合結構220。換句話說,未改質的金屬奈米線122會內嵌於膜層130中而形成複合結構220。在一些實施方式中,膜層130可包括絕緣材料,例如非導電的樹脂或其他有機材料。在一些實施方式中,可藉由旋塗、噴塗或印刷等方式形成膜層130。在一些實施方式中,膜層130的厚度可介於約20奈米至約10微米之間、約50奈米至約200奈米之間或約30至約100奈米之間。為有效地進行後續的改質步驟,聚合物(即膜層130)會形成預固化或未完全固化狀態,具體而言可參照前文的說明。Next, referring to FIG. 3B , the film layer 130 is disposed on the unmodified metal nanowires 122 , so that the film layer 130 covers the unmodified metal nanowires 122 . In some embodiments, the polymer in the film layer 130 after coating can penetrate between the metal nanowires 122 to form fillers, and the metal nanowires 122 are embedded in the film layer 130 to form the composite structure 220 . In other words, the unmodified metal nanowires 122 are embedded in the film layer 130 to form the composite structure 220 . In some embodiments, the membrane layer 130 may include an insulating material, such as a non-conductive resin or other organic material. In some embodiments, the film layer 130 may be formed by spin coating, spray coating, or printing. In some embodiments, the thickness of the film layer 130 may be between about 20 nanometers and about 10 micrometers, between about 50 nanometers and about 200 nanometers, or between about 30 nanometers and about 100 nanometers. In order to effectively carry out the subsequent modification steps, the polymer (ie, the film layer 130 ) will be in a pre-cured or incompletely cured state. For details, please refer to the foregoing description.

隨後,請參閱第3C圖,進行圖案化步驟,以使位於周邊區PA及顯示區VA的複合結構220可被定義出圖案,進而形成位於周邊區PA及位於顯示區VA的導電結構。在一些實施方式中,在周邊區PA所製作出之具有圖案的複合結構220可形成周邊引線150,而在顯示區VA所製作出之具有圖案的複合結構220可形成觸控感應電極170,且周邊引線150與觸控感應電極170可彼此電性連接,以進行周邊區PA與顯示區VA之間的訊號傳輸。在一些實施方式中,位於顯示區VA的複合結構220可被圖案化為由複數個細線L交錯而成網格狀圖案,以使顯示區VA具有良好的透光率。在圖案化步驟後,周邊引線150以及觸控感應電極170可至少包括由未改質的金屬奈米線122所形成的金屬奈米線層120。Then, referring to FIG. 3C, a patterning step is performed so that the composite structure 220 in the peripheral area PA and the display area VA can be patterned to form conductive structures in the peripheral area PA and the display area VA. In some embodiments, the patterned composite structure 220 fabricated in the peripheral area PA can form the peripheral lead 150 , and the patterned composite structure 220 fabricated in the display area VA can form the touch sensing electrode 170 , and The peripheral leads 150 and the touch sensing electrodes 170 can be electrically connected to each other for signal transmission between the peripheral area PA and the display area VA. In some embodiments, the composite structure 220 located in the display area VA may be patterned into a grid-like pattern formed by a plurality of thin lines L interlaced, so that the display area VA has good light transmittance. After the patterning step, the peripheral leads 150 and the touch sensing electrodes 170 may at least include the metal nanowire layer 120 formed by the unmodified metal nanowires 122 .

在一些實施方式中,可透過蝕刻的方式來進行複合結構220的圖案化。在一些實施方式中,可同時蝕刻位於周邊區PA及顯示區VA的複合結構220,並搭配蝕刻遮罩(例如光阻)以在同一道製程中一次性地在周邊區PA及顯示區VA製作出具有圖案的複合結構220。在一些實施方式中,當複合結構220中的金屬奈米線層120為銀奈米線層時,蝕刻液可選擇可蝕刻銀的成分,例如蝕刻液的主要成分可為H3 PO4 (比例為約55%至約70%)以及HNO3 (比例約5%至約15%),以在同一道製程中移除銀金屬材料。在另一些實施方式中,蝕刻液的主要成分可為氯化鐵/硝酸或為磷酸/雙氧水等。In some embodiments, the patterning of the composite structure 220 may be performed by etching. In some embodiments, the composite structure 220 in the peripheral area PA and the display area VA can be etched at the same time, and an etching mask (such as a photoresist) can be used to manufacture the peripheral area PA and the display area VA at one time in the same process. A composite structure 220 with a pattern is produced. In some embodiments, when the metal nanowire layer 120 in the composite structure 220 is a silver nanowire layer, the etching solution can select a component that can etch silver, for example, the main component of the etching solution can be H 3 PO 4 (ratio about 55% to about 70%) and HNO3 (about 5% to about 15%) to remove the silver metal material in the same process. In other embodiments, the main components of the etching solution may be ferric chloride/nitric acid or phosphoric acid/hydrogen peroxide or the like.

接著,請參閱第3D圖,進行改質步驟,以形成由複數個改質後之金屬奈米線122所構成的金屬奈米線層120。詳細而言,在改質步驟後,位於周邊區PA及顯示區VA的金屬奈米線層120中的金屬奈米線122的至少一部分被改質而在其表面形成披覆結構140,進而形成改質後的金屬奈米線122。在一些實施方式中,可利用化鍍的方式形成披覆結構140,亦即利用化學鍍液滲入預固化或未完全固化的膜層130中,使化學鍍液中的反應性金屬離子藉由氧化還原反應而在金屬奈米線122的表面析出以形成披覆結構140。披覆結構140可為導電材料所製成的層狀結構、島狀突起結構、點狀突起結構或其組合;或者披覆結構140可為單一材料或多種材料所製成的單層或多層結構;又或者披覆結構140可為合金態材料所製成的單層或多層結構。Next, referring to FIG. 3D , a modification step is performed to form a metal nanowire layer 120 composed of a plurality of modified metal nanowires 122 . In detail, after the modification step, at least a part of the metal nanowires 122 in the metal nanowire layer 120 in the peripheral area PA and the display area VA is modified to form the cladding structure 140 on the surface thereof, thereby forming The modified metal nanowires 122 . In some embodiments, the cladding structure 140 can be formed by electroless plating, that is, the electroless plating solution is used to infiltrate the pre-cured or incompletely cured film layer 130, so that the reactive metal ions in the electroless plating solution can be oxidized by The reduction reaction results in precipitation on the surface of the metal nanowire 122 to form the capping structure 140 . The covering structure 140 can be a layered structure made of conductive materials, an island-shaped protrusion structure, a dot-shaped protrusion structure or a combination thereof; or the covering structure 140 can be a single-layer or multi-layer structure made of a single material or multiple materials Alternatively, the cladding structure 140 may be a single-layer or multi-layer structure made of alloyed materials.

值得說明的是,由於改質步驟是沿著金屬奈米線122的表面進行,因此披覆結構140的型態會大致依照金屬奈米線122的型態生長。在改質步驟中,可控制披覆結構140的生長條件(例如化學鍍時間及/或化學鍍液成分濃度),使得披覆結構140不會過度成長,而僅披覆于金屬奈米線122的表面。另外,如前所述,預固化或未完全固化的膜層130亦可起到限位及控制的作用。如此一來,經由改質步驟所形成的披覆結構140便不會單獨地析出/成長於膜層130中而未與金屬奈米線122接觸,且會形成於金屬奈米線122的表面與膜層130之間。在一些實施方式中,相鄰的金屬奈米線122之間仍填有膜層130。另一方面,透過化學鍍/電解鍍所形成的披覆結構140具有高緻密度,其相較於周邊引線150及觸控感應電極170之細線L的尺寸(例如約10微米線寬),披覆結構140的缺陷尺寸是周邊引線150以及觸控感應電極170之細線L的尺寸的約0.01至約0.001倍,因此即使披覆結構140出現缺陷,也不會造成周邊引線150及觸控感應電極170發生斷線的問題。在一些實施方式中,在改質步驟後更可包括固化步驟,以使預固化或未完全固化的膜層130達到完全固化的狀態。It should be noted that, since the modification step is performed along the surface of the metal nanowire 122 , the shape of the cladding structure 140 will generally grow according to the shape of the metal nanowire 122 . In the modification step, the growth conditions of the cladding structure 140 (eg, the electroless plating time and/or the concentration of the electroless plating solution) can be controlled, so that the cladding structure 140 is not overgrown, but only covers the metal nanowires 122 . s surface. In addition, as mentioned above, the pre-cured or incompletely cured film layer 130 can also play the role of limiting and controlling. In this way, the cladding structure 140 formed through the modification step will not separate out/grow in the film layer 130 without contacting the metal nanowires 122 , and will be formed on the surface of the metal nanowires 122 and the metal nanowires 122 . between the film layers 130 . In some embodiments, the film layer 130 is still filled between adjacent metal nanowires 122 . On the other hand, the cladding structure 140 formed by electroless plating/electrolytic plating has high density. Compared with the size of the thin line L of the peripheral lead 150 and the touch sensing electrode 170 (for example, the line width of about 10 microns), the cladding structure 140 has a higher density. The defect size of the cladding structure 140 is about 0.01 to about 0.001 times the size of the peripheral lead 150 and the thin line L of the touch sensing electrode 170 , so even if the cladding structure 140 is defective, it will not cause the peripheral lead 150 and the touch sensing electrode. 170 The problem of disconnection occurs. In some embodiments, a curing step may be further included after the modification step, so that the pre-cured or incompletely cured film layer 130 reaches a fully cured state.

在經上述步驟後,便可形成如第2A圖所示的觸控面板100。整體而言,位於周邊區PA的周邊引線150可至少包括由改質後之金屬奈米線122所形成的金屬奈米線層120,且位於顯示區VA的觸控感應電極170亦可至少包括由改質後之金屬奈米線122所形成的金屬奈米線層120,亦即周邊引線150及觸控感應電極170中的金屬奈米線122皆包覆有披覆結構140,其中披覆結構140可與金屬奈米線122具有相同或近似的結構外貌,且在相鄰之金屬奈米線122之間填充有膜層130。After the above steps, the touch panel 100 as shown in FIG. 2A can be formed. Overall, the peripheral leads 150 in the peripheral area PA may at least include the metal nanowire layer 120 formed by the modified metal nanowires 122 , and the touch sensing electrodes 170 in the display area VA may also include at least the metal nanowire layer 120 . The metal nanowire layer 120 formed by the modified metal nanowires 122 , that is, the metal nanowires 122 in the peripheral leads 150 and the touch sensing electrodes 170 are all covered with a cladding structure 140 , wherein the cladding structure 140 is covered. The structures 140 and the metal nanowires 122 may have the same or similar structural appearance, and the film layer 130 is filled between the adjacent metal nanowires 122 .

在一些變化的實施方式中,可採用不同的製程順序來製作本揭露的觸控面板100。具體而言,可將前述觸控面板100的製作方法中步驟S14與步驟S16的順序相互對調。詳細而言,觸控面板100的另一製作方法包括步驟S20至步驟S26。在步驟S20中,提供具有事先定義之周邊區PA與顯示區VA的基板110,並設置未改質之金屬奈米線122於基板110上,以於周邊區PA及顯示區VA形成金屬奈米線層120。在步驟S22中,設置膜層130於未改質的金屬奈米線122上,使得膜層130覆蓋未改質的金屬奈米線122,且膜層130為預固化或未完全固化狀態。在步驟S24中,進行改質步驟,以將披覆結構140成型於金屬奈米線122上,使得位於周邊區PA及顯示區VA的金屬奈米線層120皆是由改質後的金屬奈米線122所構成。在步驟S26中,進行圖案化步驟,以形成具有圖案的金屬奈米線層120,其中位於周邊區PA的金屬奈米線層120被圖案化以形成周邊引線150,而位於顯示區VA的金屬奈米線層120被圖案化以形成觸控感應電極170。在以下敘述中,將僅針對調整後的步驟進行說明,其餘省略的部分可參照前述實施方式的說明。In some variant embodiments, different process sequences may be used to fabricate the touch panel 100 of the present disclosure. Specifically, the order of step S14 and step S16 in the aforementioned manufacturing method of the touch panel 100 can be reversed. In detail, another manufacturing method of the touch panel 100 includes steps S20 to S26. In step S20, a substrate 110 with a predefined peripheral area PA and a display area VA is provided, and unmodified metal nanowires 122 are disposed on the substrate 110 to form metal nanowires in the peripheral area PA and the display area VA Line layer 120 . In step S22, the film layer 130 is disposed on the unmodified metal nanowires 122, so that the film layer 130 covers the unmodified metal nanowires 122, and the film layer 130 is in a pre-cured or incompletely cured state. In step S24, a modification step is performed to form the cladding structure 140 on the metal nanowires 122, so that the metal nanowire layers 120 in the peripheral area PA and the display area VA are all made of the modified metal nanowires It is composed of rice noodles 122. In step S26, a patterning step is performed to form the metal nanowire layer 120 with a pattern, wherein the metal nanowire layer 120 in the peripheral area PA is patterned to form the peripheral wiring 150, and the metal nanowire layer 120 in the display area VA is patterned The nanowire layer 120 is patterned to form the touch sensing electrodes 170 . In the following description, only the adjusted steps will be described, and for the remaining omitted parts, reference may be made to the descriptions of the foregoing embodiments.

在步驟S24及步驟S26中,由於是先進行改質步驟再進行圖案化步驟,因此改質步驟是針對整面的複合結構220(包括金屬奈米線層120以及膜層130)來進行,也就是說,經由改質步驟所形成的披覆結構140會整面地形成於位於周邊區PA及顯示區VA中之金屬奈米線122與膜層130的界面。另一方面,在金屬奈米線122為銀奈米線,且銀奈米線的表面具有由銅所製成之披覆結構140的情況下,進行圖案化步驟時所使用的蝕刻液可選擇可蝕刻銅與銀的成分,例如蝕刻液的主要成分可為H3 PO4 (比例為約55%至約70%)及HNO3 (比例約5%至約15%),以在同一道製程中移除銀金屬材料與銅金屬材料。在另一些實施方式中,蝕刻液的主要成分可為氯化鐵/硝酸或為磷酸/雙氧水等。在經上述步驟後,同樣可形成本揭露的觸控面板100,具體結構如前所述,於此便不再贅述。In step S24 and step S26, since the modification step is performed first and then the patterning step is performed, the modification step is performed for the entire composite structure 220 (including the metal nanowire layer 120 and the film layer 130), and also That is to say, the cladding structure 140 formed by the modification step is formed on the entire surface of the interface between the metal nanowires 122 and the film layer 130 in the peripheral area PA and the display area VA. On the other hand, in the case where the metal nanowires 122 are silver nanowires, and the surface of the silver nanowires has a cladding structure 140 made of copper, the etching solution used in the patterning step can be selected The components of copper and silver can be etched. For example, the main components of the etching solution can be H 3 PO 4 (ratio of about 55% to about 70%) and HNO 3 (ratio of about 5% to about 15%), so that in the same process Remove the silver metal material and the copper metal material. In other embodiments, the main components of the etching solution may be ferric chloride/nitric acid or phosphoric acid/hydrogen peroxide or the like. After the above steps, the touch panel 100 of the present disclosure can also be formed, and the specific structure is as described above, which will not be repeated here.

由於本揭露之觸控面板100的顯示區VA及周邊區PA皆採用相同的材料(包括所形成的改質後的金屬奈米線122)來製作,因此在觸控面板100的製作過程中,可整面性地實施塗佈、圖案化及改質等步驟,以省去遮罩的使用,進而避免因使用遮罩所產生的對位誤差及周邊引線150與觸控感應電極170之間的搭接公差。換句話說,由於本揭露的周邊引線150及觸控感應電極170是由相同結構層來一體成型,不需進行搭接,不會有搭接公差,並且在進行改質步驟時也不須對位,因此不須預留對位誤差空間。如此一來,可降低觸控面板之周邊區的寬度,進而達到顯示器的窄邊框需求。具體而言,使用本揭露之觸控面板100的製作方法可減少約0.2毫米的對位誤差。如此一來,可降低觸控面板100之周邊區PA的寬度,進而達到顯示器的窄邊框需求。另一方面,由於本揭露可整面性地實施塗佈、圖案化及改質等步驟,因此可減少諸多繁瑣的製程步驟(例如遮罩的設置與移除),並可依實際需求彈性地調整製程步驟的順序,進而提升製程便利性。Since the display area VA and the peripheral area PA of the touch panel 100 of the present disclosure are made of the same material (including the formed modified metal nanowires 122 ), during the fabrication process of the touch panel 100 , The steps of coating, patterning, and modification can be performed on the entire surface, so as to save the use of a mask, thereby avoiding the alignment error caused by the use of the mask and the contact between the peripheral leads 150 and the touch sensing electrodes 170. Lap tolerance. In other words, since the peripheral leads 150 and the touch sensing electrodes 170 of the present disclosure are integrally formed from the same structural layer, no overlap is required, and there is no overlap tolerance, and there is no need to adjust the alignment during the modification step. bit, so there is no need to reserve the alignment error space. In this way, the width of the peripheral area of the touch panel can be reduced, thereby meeting the requirement of a narrow frame of the display. Specifically, using the manufacturing method of the touch panel 100 of the present disclosure can reduce the alignment error by about 0.2 mm. In this way, the width of the peripheral area PA of the touch panel 100 can be reduced, thereby meeting the narrow frame requirement of the display. On the other hand, since the present disclosure can perform the steps of coating, patterning, and modification on the entire surface, it can reduce many tedious process steps (such as the setting and removal of masks), and can flexibly according to actual needs Adjust the sequence of process steps to improve process convenience.

請再回到第2A圖以及第2B圖。在一些實施方式中,在位於周邊區PA之相鄰的周邊引線150之間以及位於顯示區VA之相鄰的觸控感應電極170之間可具有非導電區域180,以電性阻絕相鄰之周邊引線150以及相鄰之觸控感應電極170。在一些實施方式中,非導電區域180實質上可為一間隙。在一些實施方式中,可採用上述的蝕刻方法製作位於周邊引線150之間以及位於觸控感應電極170之間的間隙。Please go back to Figure 2A and Figure 2B. In some embodiments, there may be non-conductive regions 180 between adjacent peripheral leads 150 located in the peripheral area PA and between adjacent touch sensing electrodes 170 located in the display area VA to electrically block adjacent ones The peripheral leads 150 and the adjacent touch sensing electrodes 170 . In some embodiments, the non-conductive region 180 can be substantially a gap. In some embodiments, the above-mentioned etching method can be used to form the gaps between the peripheral leads 150 and between the touch sensing electrodes 170 .

在一些實施方式中,觸控面板更可包括保護層。具體而言,請參閱第4圖,其繪示根據本揭露另一些實施方式之觸控面板100a的剖面示意圖,且其剖面位置與第2B圖之剖面位置相同。觸控面板100a包括保護層190,且保護層190的材料可參照前文所述之膜層130的材料。在一些實施方式中,保護層190是整面性地覆蓋觸控面板100,亦即保護層190覆蓋於周邊引線150以及觸控感應電極170上。保護層190更可填充在位於相鄰之周邊引線150之間的非導電區域180,以電性隔絕相鄰之周邊引線150;或者保護層190可填充在位於相鄰之觸控感應電極170之間的非導電區域180,以電性隔絕相鄰之觸控感應電極170。In some embodiments, the touch panel may further include a protective layer. Specifically, please refer to FIG. 4 , which is a schematic cross-sectional view of the touch panel 100 a according to other embodiments of the present disclosure, and its cross-sectional position is the same as that of FIG. 2B . The touch panel 100a includes a protective layer 190, and the material of the protective layer 190 can refer to the material of the film layer 130 described above. In some embodiments, the protective layer 190 covers the entire surface of the touch panel 100 , that is, the protective layer 190 covers the peripheral leads 150 and the touch sensing electrodes 170 . The protective layer 190 can be filled in the non-conductive region 180 between the adjacent peripheral leads 150 to electrically isolate the adjacent peripheral leads 150; or the protective layer 190 can be filled in the adjacent touch sensing electrodes 170 The non-conductive region 180 between the adjacent touch sensing electrodes 170 is electrically isolated.

第5A圖繪示根據本揭露另一些實施方式之觸控面板100b的上視示意圖。第5B圖繪示根據本揭露一些實施方式之第5A圖的觸控面板100b沿線段5B-5B截取的剖面示意圖。請同時參閱第5A圖及第5B圖,觸控面板100b為雙面單層型態的觸控面板100b,且為清楚起見及方便說明,在第5A圖及第5B圖的實施方式中,以第一觸控感應電極172與第二觸控感應電極174來說明觸控感應電極的配置。第一觸控感應電極172配置於基板110的第一表面(例如上表面),且第二觸控感應電極174配置於基板110的第二表面(例如下表面),以使第一觸控感應電極172與第二觸控感應電極174彼此電性絕緣。在一些實施方式中,第一觸控感應電極172為多個沿第二方向D2延伸的長條狀電極,且多個長條型電極可沿著第一方向D1等距地排列,而第二觸控感應電極174為多個沿第一方向D1延伸的長條狀電極,且多個長條型電極可沿著第二方向D2等距地排列,其中第一方向D1與第二方向D2相互垂直。換句話說,第一觸控感應電極172與第二觸控感應電極174的延伸方向不同且互相交錯。第一觸控感應電極172與第二觸控感應電極174可分別傳送控制訊號與接收觸控感應訊號。如此一來,可藉由偵測第一觸控感應電極172與第二觸控感應電極174之間的訊號變化(例如電容變化)來得到觸控位置。FIG. 5A is a schematic top view of the touch panel 100b according to other embodiments of the present disclosure. FIG. 5B is a schematic cross-sectional view of the touch panel 100b of FIG. 5A taken along the line 5B- 5B according to some embodiments of the present disclosure. Please refer to FIGS. 5A and 5B at the same time, the touch panel 100b is a double-sided single-layer touch panel 100b, and for the sake of clarity and convenience of description, in the embodiments of FIGS. 5A and 5B, The configuration of the touch sensing electrodes is described with the first touch sensing electrodes 172 and the second touch sensing electrodes 174 . The first touch sensing electrodes 172 are arranged on the first surface (eg, the upper surface) of the substrate 110 , and the second touch sensing electrodes 174 are arranged on the second surface (eg, the lower surface) of the substrate 110 , so as to enable the first touch sensing The electrodes 172 and the second touch sensing electrodes 174 are electrically insulated from each other. In some embodiments, the first touch sensing electrodes 172 are a plurality of elongated electrodes extending along the second direction D2, and the plurality of elongated electrodes can be arranged at equal distances along the first direction D1, and the second The touch sensing electrodes 174 are a plurality of elongated electrodes extending along the first direction D1, and the plurality of elongated electrodes can be arranged at equal distances along the second direction D2, wherein the first direction D1 and the second direction D2 are mutually vertical. In other words, the extending directions of the first touch sensing electrodes 172 and the second touch sensing electrodes 174 are different and staggered. The first touch sensing electrodes 172 and the second touch sensing electrodes 174 can transmit control signals and receive touch sensing signals, respectively. In this way, the touch position can be obtained by detecting the signal change (eg capacitance change) between the first touch sensing electrode 172 and the second touch sensing electrode 174 .

在一些實施方式中,第一觸控感應電極172及第二觸控感應電極174各自具有由複數個細線L交錯而成的網格狀圖案,且各自包括由改質後之金屬奈米線122所形成的金屬奈米線層120。如前文所述,改質後的金屬奈米線122及外加於改質後之金屬奈米線122的膜層130被圖案化以形成由複數個細線L交錯而成的網格狀圖案,而所形成的網格狀圖案即為第一觸控感應電極172及第二觸控感應電極174的電極圖案。在一些實施方式中,第一觸控感應電極172中的細線L與第二觸控感應電極174中的細線L彼此不完全重疊。具體而言,當由上視角度(即第5A圖的視角)觀察時,第二觸控感應電極174中之兩條細線L的交叉點可位於第一觸控感應電極172中由細線L所構成之網格的正中心;相對地,第一觸控感應電極172中之兩條細線L的交叉點亦可位於第二觸控感應電極174中由細線L所構成之網格的正中心。然而,本揭露並不以此為限,在另一些實施方式中,第一觸控感應電極172中的細線L與第二觸控感應電極174中的細線L亦可完全地重疊。第一觸控感應電極172電性連接其所對應的周邊引線150,且第二觸控感應電極174亦電性連接其所對應的周邊引線150。如同前述各實施方式,周邊引線150、第一觸控感應電極172以及第二觸控感應電極174皆包括改質後的金屬奈米線122與膜層130。換句話說,周邊引線150、第一觸控感應電極172以及第二觸控感應電極174皆可依照前述方法將披覆結構140成型於金屬奈米線122的表面。另一方面,第一觸控感應電極172及第二觸控感應電極174中各自之細線L的線寬W1與線距X1以及周邊引線150的線寬W2與線距X2可參照前文的說明,於此便不再贅述。In some embodiments, the first touch sensing electrodes 172 and the second touch sensing electrodes 174 each have a grid-like pattern formed by a plurality of fine lines L interlaced, and each includes a modified metal nanowire 122 The formed metal nanowire layer 120 . As mentioned above, the modified metal nanowires 122 and the film layer 130 applied to the modified metal nanowires 122 are patterned to form a grid pattern formed by a plurality of thin lines L interlaced, and The formed grid pattern is the electrode pattern of the first touch sensing electrodes 172 and the second touch sensing electrodes 174 . In some embodiments, the thin lines L in the first touch sensing electrodes 172 and the thin lines L in the second touch sensing electrodes 174 do not completely overlap with each other. Specifically, when viewed from the top view angle (ie, the view angle of FIG. 5A ), the intersection of the two thin lines L in the second touch sensing electrodes 174 can be located in the first touch sensing electrodes 172 by the thin lines L. On the other hand, the intersection of the two thin lines L in the first touch sensing electrodes 172 can also be located at the exact center of the grid formed by the thin lines L in the second touch sensing electrodes 174 . However, the present disclosure is not limited thereto, and in other embodiments, the thin lines L in the first touch sensing electrodes 172 and the thin lines L in the second touch sensing electrodes 174 may also completely overlap. The first touch sensing electrodes 172 are electrically connected to their corresponding peripheral leads 150 , and the second touch sensing electrodes 174 are also electrically connected to their corresponding peripheral leads 150 . Like the foregoing embodiments, the peripheral leads 150 , the first touch sensing electrodes 172 and the second touch sensing electrodes 174 all include the modified metal nanowires 122 and the film layer 130 . In other words, the peripheral lead 150 , the first touch sensing electrode 172 and the second touch sensing electrode 174 can all form the capping structure 140 on the surface of the metal nanowire 122 according to the aforementioned method. On the other hand, the line width W1 and line spacing X1 of the respective thin lines L in the first touch sensing electrode 172 and the second touch sensing electrode 174 and the line width W2 and line spacing X2 of the peripheral lead 150 may refer to the foregoing description. It will not be repeated here.

第5A圖及第5B圖所繪示之雙面單層型態的觸控面板100b的製作方法包括步驟S30至步驟S36。在步驟S30中,提供具有事先定義之周邊區PA與顯示區VA的基板110,並設置未改質之金屬奈米線122於基板110的相對兩表面,以分別形成金屬奈米線層120於基板110之相對兩表面的周邊區PA以及顯示區VA。在步驟S32中,設置膜層130於未改質的金屬奈米線122上,使得膜層130於基板110之相對兩表面覆蓋未改質的金屬奈米線122且膜層130為預固化或未完全固化狀態。在步驟S34中,進行雙面圖案化步驟以形成具有圖案的金屬奈米線層120,其中位於基板110之相對兩表面之周邊區PA的金屬奈米線層120被圖案化以形成周邊引線150,而位於基板110之相對兩表面之顯示區VA的金屬奈米線層120被圖案化以形成觸控感應電極170。在步驟S36中,進行雙面改質步驟以將披覆結構140成型於位於基板110之相對兩表面的金屬奈米線122上,使得位於基板110之相對兩表面之周邊區PA的周邊引線150及顯示區VA的觸控感應電極170皆是由改質後的金屬奈米線122所構成。如同前述實施方式,觸控面板100b的製作方法中的步驟S34與步驟S36的順序亦可相互對調,且雙面單層型態之觸控面板100b的製作方法可參照前文中所述的單面型態之觸控面板100的製作方法,於此便不再贅述。The manufacturing method of the double-sided single-layer touch panel 100b shown in FIGS. 5A and 5B includes steps S30 to S36. In step S30 , a substrate 110 having a predefined peripheral area PA and a display area VA is provided, and unmodified metal nanowires 122 are disposed on two opposite surfaces of the substrate 110 to form metal nanowire layers 120 respectively. The peripheral area PA and the display area VA on two opposite surfaces of the substrate 110 . In step S32, the film layer 130 is disposed on the unmodified metal nanowires 122, so that the film layer 130 covers the unmodified metal nanowires 122 on two opposite surfaces of the substrate 110 and the film layer 130 is pre-cured or Incompletely cured state. In step S34 , a double-sided patterning step is performed to form a patterned metal nanowire layer 120 , wherein the metal nanowire layer 120 located in the peripheral area PA on the two opposite surfaces of the substrate 110 is patterned to form peripheral leads 150 , and the metal nanowire layers 120 in the display area VA on the opposite surfaces of the substrate 110 are patterned to form the touch sensing electrodes 170 . In step S36 , a double-sided modification step is performed to form the cladding structure 140 on the metal nanowires 122 located on the opposite surfaces of the substrate 110 , so that the peripheral leads 150 located in the peripheral area PA on the opposite surfaces of the substrate 110 and the touch sensing electrodes 170 of the display area VA are all formed of the modified metal nanowires 122 . As in the aforementioned embodiments, the order of step S34 and step S36 in the manufacturing method of the touch panel 100b can also be reversed, and the manufacturing method of the double-sided single-layer touch panel 100b can refer to the single-sided manufacturing method described above. The manufacturing method of the touch panel 100 of this type will not be repeated here.

本揭露之金屬奈米線的改質方法亦可應用於製作不需考慮透光度的感應電極,例如但不限於筆記型電腦的觸控板、天線結構及無線充電的線圈等。在一些實施方式中,感應電極可連接走線,進而與外部線路相連以傳遞訊號。在一些實施方式中,走線可相當於前文中所述的周邊引線,並同樣是由改質後的金屬奈米線所構成。The method for modifying metal nanowires disclosed in the present disclosure can also be applied to fabrication of sensing electrodes that do not need to consider light transmittance, such as but not limited to touch panels of notebook computers, antenna structures, and coils for wireless charging. In some embodiments, the sensing electrodes can be connected to traces and then connected to external circuits to transmit signals. In some embodiments, the traces may be equivalent to the aforementioned peripheral leads, and are also formed of modified metal nanowires.

本揭露之觸控面板可與其他電子裝置組裝,例如具觸控功能的顯示器。舉例而言,可將基板貼合於顯示元件(例如液晶顯示元件或有機發光二極體顯示元件),且兩者之間可使用光學膠或其他黏合劑進行貼合,而觸控感應電極亦可利用光學膠與外蓋層(例如保護玻璃)進行貼合。本揭露之觸控面板及天線可應用於可攜式電話、平板電腦以及筆記型電腦等的電子設備,亦可應用於可撓性產品。本揭露之觸控面板還可應用於偏光片。本揭露之電極可應用於穿戴式裝置(例如手錶、眼鏡、智慧衣服及智慧鞋等)以及車用裝置(例如儀錶板、行車紀錄器、車用後視鏡及車窗等)。The touch panel of the present disclosure can be assembled with other electronic devices, such as a display with touch function. For example, the substrate can be attached to a display element (such as a liquid crystal display element or an organic light emitting diode display element), and optical glue or other adhesives can be used for lamination between the two, and the touch sensing electrodes are also The optical glue can be used for bonding with the outer cover layer (such as protective glass). The touch panel and antenna of the present disclosure can be applied to electronic devices such as portable phones, tablet computers, and notebook computers, and can also be applied to flexible products. The touch panel of the present disclosure can also be applied to a polarizer. The electrodes of the present disclosure can be applied to wearable devices (such as watches, glasses, smart clothes and smart shoes, etc.) and automotive devices (such as instrument panels, driving recorders, car mirrors, and car windows, etc.).

根據本揭露上述實施方式,由於在本揭露的觸控面板中,位於周邊區的周邊引線及位於顯示區的觸控感應電極皆是由改質後的金屬奈米線所形成,因此可有效地降低觸控面板的面電阻以提升觸控面板的導電度,並可降低觸控面板的阻容式負載值。另一方面,由於位於顯示區的觸控感應電極具有由多個細線交錯而成的網格狀圖案,因此可避免改質後的金屬奈米線影響顯示區的透光率,進而使得觸控面板的顯示區具有良好的光學特性。此外,由於本揭露之觸控面板的周邊引線及觸控感應電極皆是採用相同的材料(包括所形成的改質後的金屬奈米線)所製成,因此在觸控面板的製作過程中,可整面性地實施,以省去遮罩的使用,進而避免因使用遮罩所產生的對位誤差以及周邊引線與觸控感應電極之間的搭接公差。換句話說,由於本揭露的周邊引線以及觸控感應電極是由相同結構層來一體成型,不需進行搭接,不會有搭接公差,並且在進行改質步驟時也不須對位,因此不須預留對位誤差空間。如此一來,可降低觸控面板之周邊區的寬度,進而達到顯示器的窄邊框需求。According to the above-mentioned embodiments of the present disclosure, since in the touch panel of the present disclosure, the peripheral leads located in the peripheral area and the touch sensing electrodes located in the display area are both formed by the modified metal nanowires, so it can effectively The surface resistance of the touch panel is reduced to improve the conductivity of the touch panel, and the resistance-capacitance load value of the touch panel can be reduced. On the other hand, since the touch sensing electrodes in the display area have a grid-like pattern formed by a plurality of fine lines interlaced, the modified metal nanowires can prevent the light transmittance of the display area from being affected by the modified metal nanowires, thereby making the touch The display area of the panel has good optical properties. In addition, since the peripheral leads and the touch sensing electrodes of the touch panel of the present disclosure are all made of the same material (including the formed modified metal nanowires), during the fabrication of the touch panel , can be implemented on the whole surface, so as to save the use of a mask, thereby avoiding the alignment error caused by the use of the mask and the overlap tolerance between the peripheral leads and the touch sensing electrodes. In other words, since the peripheral leads and the touch sensing electrodes of the present disclosure are integrally formed from the same structural layer, no overlapping is required, there is no overlapping tolerance, and no alignment is required during the modification step. Therefore, it is not necessary to reserve the alignment error space. In this way, the width of the peripheral area of the touch panel can be reduced, thereby meeting the requirement of a narrow frame of the display.

雖然本揭露已以實施方式揭露如上,然其並非用以限定本揭露,任何熟習此技藝者,在不脫離本揭露之精神和範圍內,當可作各種之更動與潤飾,因此本揭露之保護範圍當視後附之申請專利範圍所界定者為準。Although the present disclosure has been disclosed as above in embodiments, it is not intended to limit the present disclosure. Anyone skilled in the art can make various changes and modifications without departing from the spirit and scope of the present disclosure. Therefore, the present disclosure protects The scope shall be determined by the scope of the appended patent application.

100,100a,100b,100c:觸控面板 110:基板 120:金屬奈米線層 122:金屬奈米線 130:膜層 140:披覆結構 150:周邊引線 170:觸控感應電極 172:第一觸控感應電極 174:第二觸控感應電極 180:非導電區域 190:保護層 220:複合結構 PA:周邊區 VA:顯示區 L:細線 W1,W2:線寬 X1,X2:線距 D1:第一方向 D2:第二方向 2B-2B,5B-5B:線段100, 100a, 100b, 100c: Touch Panel 110: Substrate 120: Metal Nanowire Layer 122: Metal Nanowires 130: film layer 140: Coated Structure 150: Peripheral lead 170: Touch Sensing Electrode 172: The first touch sensing electrode 174: Second touch sensing electrode 180: Non-conductive area 190: Protective Layer 220: Composite Structures PA: Surrounding area VA: Display area L: thin line W1,W2: Line width X1, X2: line spacing D1: first direction D2: Second direction 2B-2B, 5B-5B: line segment

為讓本揭露之上述和其他目的、特徵、優點與實施例能更明顯易懂,所附圖式之說明如下: 第1A圖至第1C圖繪示根據本揭露一些實施方式之將金屬奈米線改質的方法在不同步驟的剖面示意圖; 第2A圖繪示根據本揭露一些實施方式之觸控面板的上視示意圖; 第2B圖繪示根據本揭露一些實施方式之第2A圖的觸控面板沿線段2B-2B截取的剖面示意圖; 第3A圖至第3D圖繪示根據本揭露一些實施方式之觸控面板的製作方法在不同步驟的剖面示意圖; 第4圖繪示根據本揭露另一些實施方式之觸控面板的剖面示意圖; 第5A圖繪示根據本揭露另一些實施方式之觸控面板的上視示意圖;以及 第5B圖繪示根據本揭露一些實施方式之第5A圖的觸控面板沿線段5B-5B截取的剖面示意圖。In order to make the above and other objects, features, advantages and embodiments of the present disclosure more clearly understood, the accompanying drawings are described as follows: 1A to 1C are schematic cross-sectional views of different steps of a method for modifying metal nanowires according to some embodiments of the present disclosure; FIG. 2A is a schematic top view of a touch panel according to some embodiments of the present disclosure; FIG. 2B is a schematic cross-sectional view of the touch panel of FIG. 2A according to some embodiments of the present disclosure, taken along the line segment 2B-2B; FIGS. 3A to 3D are schematic cross-sectional views at different steps of a manufacturing method of a touch panel according to some embodiments of the present disclosure; FIG. 4 is a schematic cross-sectional view of a touch panel according to other embodiments of the present disclosure; FIG. 5A is a schematic top view of a touch panel according to other embodiments of the present disclosure; and FIG. 5B is a schematic cross-sectional view of the touch panel of FIG. 5A according to some embodiments of the present disclosure, taken along a line segment 5B- 5B.

國內寄存資訊(請依寄存機構、日期、號碼順序註記) 無 國外寄存資訊(請依寄存國家、機構、日期、號碼順序註記) 無Domestic storage information (please note in the order of storage institution, date and number) without Foreign deposit information (please note in the order of deposit country, institution, date and number) without

100:觸控面板100: touch panel

110:基板110: Substrate

150:周邊引線150: Peripheral lead

170:觸控感應電極170: Touch Sensing Electrode

PA:周邊區PA: Surrounding area

VA:顯示區VA: Display area

L:細線L: thin line

D1:第一方向D1: first direction

D2:第二方向D2: Second direction

2B-2B:線段2B-2B: Line segment

Claims (25)

一種觸控面板,包括: 一基板,具有一顯示區及一周邊區; 一周邊引線,設置於該基板的該周邊區;以及 一第一觸控感應電極,設置於該基板的該顯示區,其中該第一觸控感應電極電性連接該周邊引線,且具有由複數個第一細線交錯而成的網格狀圖案, 其中該周邊引線以及該第一觸控感應電極各自包括複數個導電奈米結構以及外加於每一該些導電奈米結構的一膜層,且每一該些導電奈米結構與該膜層的一界面實質上具有一披覆結構。A touch panel, comprising: a substrate having a display area and a peripheral area; a peripheral lead disposed in the peripheral region of the substrate; and a first touch sensing electrode disposed in the display area of the substrate, wherein the first touch sensing electrode is electrically connected to the peripheral lead, and has a grid-like pattern formed by a plurality of first thin lines interlaced, Wherein the peripheral lead and the first touch sensing electrode each include a plurality of conductive nanostructures and a film layer applied to each of the conductive nanostructures, and each of the conductive nanostructures and the film layer An interface substantially has a cladding structure. 如請求項1所述的觸控面板,其中該披覆結構包括一鍍層,且該鍍層完全包覆每一該些導電奈米結構與該膜層的該界面。The touch panel of claim 1, wherein the cladding structure includes a plating layer, and the plating layer completely covers the interface between each of the conductive nanostructures and the film layer. 如請求項1所述的觸控面板,其中相鄰的該些導電奈米結構之間填充有該膜層,且該膜層中不具有單獨存在的該披覆結構。The touch panel according to claim 1, wherein the film layer is filled between the adjacent conductive nanostructures, and the film layer does not have the covering structure that exists alone. 如請求項1所述的觸控面板,其中每一該些導電奈米結構包括一金屬奈米線,且該披覆結構完全包覆該金屬奈米線與該膜層的一界面,並在該金屬奈米線與該膜層的該界面形成均勻的一披覆層。The touch panel of claim 1, wherein each of the conductive nanostructures comprises a metal nanowire, and the cladding structure completely covers an interface between the metal nanowire and the film layer, The interface between the metal nanowire and the film layer forms a uniform coating layer. 如請求項1所述的觸控面板,其中該披覆結構係由一導電材料所製成的一層狀結構、一島狀突起結構、一點狀突起結構或其組合。The touch panel of claim 1, wherein the cladding structure is a layered structure made of a conductive material, an island-shaped protrusion structure, a point-shaped protrusion structure, or a combination thereof. 如請求項5所述的觸控面板,其中該導電材料包括銀、金、銅、鎳、鉑、銥、銠、鈀、鋨或其組合的合金。The touch panel of claim 5, wherein the conductive material comprises alloys of silver, gold, copper, nickel, platinum, iridium, rhodium, palladium, osmium, or a combination thereof. 如請求項1所述的觸控面板,其中該披覆結構係由單一金屬材料或合金材料所製成的單層結構,或者係由兩種以上的金屬材料或合金所製成的兩層或多層結構。The touch panel of claim 1, wherein the cladding structure is a single-layer structure made of a single metal material or alloy material, or a two-layer structure made of two or more metal materials or alloys, or Multilayer structure. 如請求項1所述的觸控面板,其中該披覆結構係一化學鍍銅層、一電鍍銅層、一化學鍍銅鎳層、一化學鍍銅銀層或其組合。The touch panel of claim 1, wherein the cladding structure is an electroless copper plating layer, an electroless copper plating layer, an electroless copper nickel plating layer, an electroless copper silver plating layer or a combination thereof. 如請求項1所述的觸控面板,其中每一該些導電奈米結構、該膜層以及該披覆結構位於每一該些第一細線中。The touch panel of claim 1, wherein each of the conductive nanostructures, the film layer and the cladding structure is located in each of the first thin lines. 如請求項1所述的觸控面板,其中每一該些第一細線的線寬介於1微米至10微米之間,且相鄰之每一該些第一細線的線距介於1微米至10微米之間。The touch panel of claim 1, wherein the line width of each of the first thin lines is between 1 micrometer and 10 micrometers, and the line spacing of each of the adjacent first thin lines is between 1 micrometer to 10 microns. 如請求項1所述的觸控面板,其中該基板具有相對的一第一表面及一第二表面,該第一觸控感應電極設置於該基板的該第一表面,且該觸控面板更包括: 一第二觸控感應電極,設置於該基板的該第二表面及該顯示區,其中該第二觸控感應電極具有由複數個第二細線交錯而成的網格狀圖案。The touch panel of claim 1, wherein the substrate has a first surface and a second surface opposite to each other, the first touch sensing electrodes are disposed on the first surface of the substrate, and the touch panel is further include: A second touch sensing electrode is disposed on the second surface of the substrate and the display area, wherein the second touch sensing electrode has a grid pattern formed by a plurality of second thin lines interlaced. 如請求項11所述的觸控面板,其中該第二觸控感應電極包括該些導電奈米結構以及外加於每一該些導電奈米結構的該膜層,且每一該些導電奈米結構與該膜層的一界面實質上具有該披覆結構。The touch panel of claim 11, wherein the second touch sensing electrode comprises the conductive nanostructures and the film layer applied to each of the conductive nanostructures, and each of the conductive nanostructures An interface between the structure and the film layer substantially has the cladding structure. 如請求項11所述的觸控面板,其中由該些第一細線交錯而成的網格狀圖案與由該些第二細線交錯而成的網格狀圖案不完全重疊。The touch panel of claim 11, wherein the grid-like pattern formed by the interlacing of the first thin lines and the grid-like pattern formed by the interlacing of the second thin lines do not completely overlap. 一種觸控面板的製作方法,包括: 提供一基板,具有一顯示區及一周邊區; 設置複數個導電奈米結構於該顯示區及該周邊區,以形成一導電層; 外加一膜層於該導電層上,並使該膜層達到預固化或未完全固化狀態; 進行圖案化步驟,包括: 圖案化位於該顯示區的該導電層及該膜層,以形成具有由複數個細線交錯而成之網格狀圖案的一觸控感應電極;以及 圖案化位於該周邊區的該導電層與該膜層,以形成一周邊引線;以及 進行改質步驟,使一披覆結構成型在位於該顯示區及該周邊區的每一該些導電奈米結構的一表面,使得每一該些導電奈米結構與該膜層的一界面實質上具有該披覆結構。A manufacturing method of a touch panel, comprising: providing a substrate with a display area and a peripheral area; disposing a plurality of conductive nanostructures in the display area and the peripheral area to form a conductive layer; Add a film layer on the conductive layer, and make the film layer reach a pre-cured or incompletely cured state; Perform patterning steps, including: patterning the conductive layer and the film layer in the display area to form a touch sensing electrode with a grid pattern formed by a plurality of fine lines interlaced; and patterning the conductive layer and the film layer in the peripheral region to form a peripheral lead; and A modification step is performed to form a cladding structure on a surface of each of the conductive nanostructures located in the display area and the peripheral area, so that an interface between each of the conductive nanostructures and the film layer is substantially with the cladding structure on it. 如請求項14所述的觸控面板的製作方法,其中該圖案化步驟係在該改質步驟之前或之後進行。The manufacturing method of a touch panel as claimed in claim 14, wherein the patterning step is performed before or after the modification step. 如請求項14所述的觸控面板的製作方法,其中圖案化位於該顯示區及該周邊區的該導電層與該膜層係在同一道製程中進行。The method for fabricating a touch panel according to claim 14, wherein the patterning of the conductive layer and the film layer located in the display area and the peripheral area is performed in the same process. 如請求項14所述的觸控面板的製作方法,其中該改質步驟包括: 將該膜層及該些導電奈米結構浸入一化學鍍溶液,該化學鍍溶液滲入該膜層中並與該些導電奈米結構接觸,使得一金屬析出於每一該些導電奈米結構的該表面。The manufacturing method of a touch panel as claimed in claim 14, wherein the modifying step comprises: The film layer and the conductive nanostructures are immersed in an electroless plating solution, and the electroless plating solution penetrates into the film layer and contacts the conductive nanostructures, so that a metal is precipitated out of each of the conductive nanostructures the surface. 如請求項17所述的觸控面板的製作方法,其中該披覆結構沿著每一該些導電奈米結構的該表面形成,並位於每一該些導電奈米結構與該膜層的該界面。The method for fabricating a touch panel as claimed in claim 17, wherein the cladding structure is formed along the surface of each of the conductive nanostructures and is located between each of the conductive nanostructures and the film layer interface. 如請求項14所述的觸控面板的製作方法,其中外加該膜層於該導電層上包括: 塗佈一聚合物於該導電層上;以及 控制固化條件,使得該聚合物達到預固化或未完全固化狀態。The method for manufacturing a touch panel as claimed in claim 14, wherein applying the film layer on the conductive layer comprises: coating a polymer on the conductive layer; and The curing conditions are controlled so that the polymer reaches a pre-cured or incompletely cured state. 如請求項14所述的觸控面板的製作方法,其中外加該膜層於該導電層上包括: 塗佈一聚合物於該導電層上;以及 控制固化條件,使得該聚合物達到預固化或未完全固化狀態,其中該預固化或未完全固化狀態的該膜層具有一第一層區域及一第二層區域,且該第二層區域的固化狀態高於該第一層區域的固化狀態。The method for manufacturing a touch panel as claimed in claim 14, wherein applying the film layer on the conductive layer comprises: coating a polymer on the conductive layer; and Control the curing conditions so that the polymer reaches a precured or incompletely cured state, wherein the film layer in the precured or incompletely cured state has a first layer region and a second layer region, and the second layer region is The cured state is higher than that of the first layer region. 如請求項20所述的觸控面板的製作方法,其中在該第一層區域中,該披覆結構沿著每一該些導電奈米結構的該表面形成,並位於每一該些導電奈米結構與該膜層的該界面。The manufacturing method of a touch panel as claimed in claim 20, wherein in the first layer region, the cladding structure is formed along the surface of each of the conductive nanostructures, and is located at each of the conductive nanostructures The interface between the rice structure and the film layer. 如請求項20所述的觸控面板的製作方法,其中該控制固化條件包括: 引入氣體,並控制該氣體在該第一層區域與該第二層區域各自的濃度。The manufacturing method of a touch panel as claimed in claim 20, wherein the controlled curing conditions include: A gas is introduced and the respective concentrations of the gas in the first layer region and the second layer region are controlled. 如請求項14所述的觸控面板的製作方法,其中該改質步驟包括化學鍍步驟、電鍍步驟或其組合。The manufacturing method of a touch panel according to claim 14, wherein the modifying step comprises an electroless plating step, an electroplating step or a combination thereof. 一種包括如請求項1所述的觸控面板的裝置。A device comprising the touch panel of claim 1. 如請求項24所述的裝置,其中該裝置包括顯示器、可攜式電話、平板計算機、穿戴裝置、車用裝置、筆記型電腦或偏光片。The device of claim 24, wherein the device comprises a display, a portable phone, a tablet computer, a wearable device, a vehicle device, a notebook computer, or a polarizer.
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