TW202208302A - Foldable substrates and methods of making - Google Patents

Foldable substrates and methods of making Download PDF

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TW202208302A
TW202208302A TW109129562A TW109129562A TW202208302A TW 202208302 A TW202208302 A TW 202208302A TW 109129562 A TW109129562 A TW 109129562A TW 109129562 A TW109129562 A TW 109129562A TW 202208302 A TW202208302 A TW 202208302A
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central
depth
substrate
thickness
outer layer
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TW109129562A
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Chinese (zh)
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道格拉斯克里平格 艾倫
馬修約翰 德奈卡
宇輝 金
興華 李
尤瑟夫凱德 庫羅許
徐廷戈
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美商康寧公司
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Abstract

In some embodiments, foldable substrates comprise a first outer layer comprising a first major surface, a second outer layer comprising a second major surface, and a core layer positioned therebetween. In further embodiments, the core layer comprising a first central surface area positioned between a first portion and a second portion of the first outer layer, and the core layer comprising a second central surface area positioned between a third portion and fourth portion of the second outer layer. In some embodiments, foldable substrates comprise a first portion comprising a first depth of compression, a first depth of layer, and a first average concentration. In further embodiments, the central portion comprises a first central depth of compression, a first central depth of layer, and a central average concentration. Methods comprise chemically strengthening a foldable substrate. In some embodiments, methods comprise etching the foldable substrate and then further chemically strengthening the foldable substrate.

Description

可折疊基板及其製造方法Foldable substrate and method of making the same

本揭露內容大體係關於可折疊基板及其製作方法,且更特定言之,係關於包含多個部分之可折疊基板及製作可折疊基板之方法。The present disclosure generally relates to foldable substrates and methods of making them, and more particularly, to foldable substrates comprising multiple parts and methods of making foldable substrates.

基於玻璃之基板通常用於例如顯示裝置中,顯示裝置例如液晶顯示器(liquid crystal display;LCD)、電泳顯示器(electrophoretic display;EPD)、有機發光二極體顯示器(organic light emitting diode display;OLED)、電漿顯示面板(plasma display panel;PDP)或類似者。Glass-based substrates are commonly used, for example, in display devices such as liquid crystal displays (LCDs), electrophoretic displays (EPDs), organic light emitting diode displays (OLEDs), Plasma display panel (PDP) or the like.

有需要開發顯示器之可折疊型式,以及可折疊保護性蓋以安裝於可折疊顯示器上。可折疊顯示器及蓋應具有良好抗衝擊性及抗刺紮性。同時,可折疊顯示器及蓋應具有小的最小彎曲半徑(例如,約10毫米(mm)或更小)。然而,具有小的最小彎曲半徑之塑膠顯示器及蓋傾向於具有不良抗衝擊性及/或抗刺紮性。此外,習知智慧表明,具有小的最小彎曲半徑的基於超薄玻璃之薄片(例如,厚為約75微米(micrometer)(µm或微米(micron))或更小)傾向於具有不良抗衝擊性及/或抗刺紮性。此外,具有良好抗衝擊性及/或抗刺紮性的基於較厚玻璃之薄片(例如,大於125微米)傾向於具有相對大的最小彎曲半徑(例如,約30微米或更大)。因此,需要開發具有低最小彎曲半徑及良好抗衝擊性及抗刺紮性之可折疊設備。There is a need to develop foldable versions of displays, as well as foldable protective covers for mounting on foldable displays. Foldable displays and covers should have good impact resistance and puncture resistance. At the same time, the foldable display and cover should have a small minimum bend radius (eg, about 10 millimeters (mm) or less). However, plastic displays and covers with small minimum bend radii tend to have poor impact and/or puncture resistance. Furthermore, conventional wisdom suggests that ultra-thin glass-based flakes with small minimum bend radii (eg, about 75 micrometers (µm or micron) thick) or less tend to have poor impact resistance and/or puncture resistance. Furthermore, thicker glass-based flakes (eg, greater than 125 microns) that have good impact and/or puncture resistance tend to have relatively large minimum bend radii (eg, about 30 microns or greater). Therefore, there is a need to develop foldable devices with a low minimum bend radius and good impact and puncture resistance.

本文中闡述包含可折疊基板之可折疊設備、可折疊基板以及製作可折疊設備及可折疊基板之方法,該等可折疊基板包含包含一第一部分及一第二部分之可折疊基板。該等部分可包含基於玻璃之部分及/或基於陶瓷之部分,其可提供良好尺寸穩定性、減少發生機械不穩定性、良好抗衝擊性及/或良好抗刺紮性。該第一部分及/或該第二部分可包含基於玻璃之部分及/或基於陶瓷之部分,其包含一或多個壓縮應力區域,此可進一步提供增大之抗衝擊性及/或增大之抗刺紮性。藉由提供包含一基於玻璃之基板及/或基於陶瓷之基板的一基板,該基板亦可提供增大之抗衝擊性及/或抗刺紮性,同時有助於良好折疊效能。在一些實施例中,基板厚度可足夠大(例如,自約80微米(micrometer)(微米(micron)或µm)至約2毫米),以進一步增強抗衝擊性及抗刺紮性。提供包含一中心部分(包含小於一基板厚度(例如,第一部分之第一厚度及/或第二部分之第二厚度)之一中心厚度)之可折疊基板可基於該中心部分中的減小之厚度實現小的有效最小彎曲半徑(例如,約10毫米或更小)。Described herein are foldable devices including foldable substrates, foldable substrates, and methods of making foldable devices and foldable substrates, the foldable substrates including a foldable substrate including a first portion and a second portion. Such portions may include glass-based portions and/or ceramic-based portions, which may provide good dimensional stability, reduced occurrence of mechanical instability, good impact resistance, and/or good puncture resistance. The first portion and/or the second portion may comprise a glass-based portion and/or a ceramic-based portion comprising one or more regions of compressive stress, which may further provide increased impact resistance and/or increased Puncture resistance. By providing a substrate comprising a glass-based substrate and/or a ceramic-based substrate, the substrate may also provide increased impact resistance and/or puncture resistance while contributing to good folding performance. In some embodiments, the substrate thickness may be sufficiently large (eg, from about 80 micrometers (microns or μm) to about 2 millimeters) to further enhance impact and puncture resistance. Providing a foldable substrate comprising a central portion comprising a central thickness less than a substrate thickness (eg, the first thickness of the first portion and/or the second thickness of the second portion) can be based on a reduction in the central portion. The thickness enables a small effective minimum bend radius (eg, about 10 mm or less).

在一些實施例中,該可折疊設備及/或可折疊基板可包含複數個凹座,例如,自一第一主表面凹進一第一距離之一第一中心表面區及自一第二主表面凹進一第二距離之一第二中心表面區。提供與一第二凹座相對之一第一凹座可提供小於一基板厚度之中心厚度。另外,提供與一第二凹座相對之一第一凹座可減小該可折疊設備的一最大彎曲誘發之應變,例如,在中心部分與第一部分及/或第二部分之間,此係由於包含中心厚度之中心部分可比在僅提供單一凹座之情況靠近可折疊設備及/或可折疊基板之一中性軸。另外,提供實質上等於第二距離之第一距離可減少在中心部分中的機械不穩定性之發生,例如,因為可折疊基板關於包含基板厚度及中心厚度之一中點的一平面對稱。此外,與具有按第一距離與第二距離之總和凹進之一表面的一單一凹座相比,提供與一第二凹座相對之一第一凹座可減小定位於該第一凹座及/或該第二凹座中的材料之彎曲誘發應變。提供定位於該第一凹座及/或該第二凹座中的材料之減小之彎曲誘發應變可實現對更寬泛材料範圍之使用,此係由於對材料的應變要求減小。舉例而言,較硬及/或較剛性材料可定位於第一凹座中,此可改良可折疊設備之抗衝擊性、抗刺紮性、耐磨性及/或耐刮擦性。另外,控制定位於第一凹座中的第一材料及定位於第二凹座中的第二材料之性質可控制可折疊設備及/或可折疊基板之中性軸之位置,此可減少(例如,減輕、消除)機械不穩定性、設備疲勞及/或設備故障之發生。In some embodiments, the foldable device and/or foldable substrate may include a plurality of recesses, eg, a first central surface area recessed a first distance from a first major surface and from a second major surface A second central surface area is recessed a second distance. Providing a first recess opposite a second recess can provide a center thickness less than a substrate thickness. Additionally, providing a first recess opposite a second recess may reduce a maximum bending-induced strain of the foldable device, eg, between the central portion and the first and/or second portion, which is Since the central portion including the central thickness can be closer to a neutral axis of the foldable device and/or foldable substrate than if only a single recess were provided. Additionally, providing the first distance substantially equal to the second distance may reduce the occurrence of mechanical instabilities in the central portion, eg, because the foldable substrate is symmetric about a plane including a midpoint of the substrate thickness and the central thickness. Furthermore, providing a first recess opposite a second recess may reduce positioning at the first recess compared to a single recess having a surface recessed by the sum of the first and second distances Bending induced strain in the seat and/or the material in the second recess. Providing a reduced bending induced strain of the material positioned in the first pocket and/or the second pocket enables use of a wider range of materials due to reduced strain requirements on the material. For example, a harder and/or more rigid material may be positioned in the first recess, which may improve impact resistance, puncture resistance, abrasion resistance, and/or scratch resistance of the foldable device. Additionally, controlling the properties of the first material positioned in the first pocket and the second material positioned in the second pocket can control the position of the neutral axis of the foldable device and/or foldable substrate, which can reduce ( For example, reduce, eliminate) the occurrence of mechanical instability, equipment fatigue and/or equipment failure.

在一些實施例中,可折疊設備及/或可折疊基板可包含將中心部分附接至第一部分之一第一過渡部分及/或將中心部分附接至第二部分之一第二過渡部分。提供具有連續增大厚度之過渡區域可減小過渡區域中之應力集中,及/或避免光學失真。提供足夠長度之過渡區域(例如,約1 mm或更大)可避免可原本自可折疊基板之厚度之突然、階狀改變存在的光學失真。提供足夠小長度之過渡區域(例如,約5 mm或更小)可減少具有中間厚度的可折疊設備及/或可折疊基板之量,該可折疊設備及/或該等可折疊基板可具有減小之抗衝擊性及/或減小之抗刺紮性。另外,提供具有張應力區域之第一過渡區域及/或第二過渡區域可抵消在折疊期間在第一部分或第二部分與第一過渡部分及/或第二過渡部分之間的應變,該張應力區域包含大於中心部分之中心張應力區域之最大張應力的最大張應力。另外,提供具有張應力區域之第一過渡區域及/或第二過渡區域可抵消在折疊期間在中心部分與第一過渡部分及/或第二過渡部分之間的應變,該張應力區域包含大於第一部分之第一張應力區域及/或第二部分之第二張應力區域之最大張應力的最大張應力。In some embodiments, the foldable device and/or foldable substrate may include a first transition portion attaching the central portion to a first portion and/or a second transition portion attaching the central portion to a second portion. Providing a transition region with a continuously increasing thickness can reduce stress concentrations in the transition region and/or avoid optical distortion. Providing transition regions of sufficient length (eg, about 1 mm or more) can avoid optical distortions that could otherwise arise from sudden, stepped changes in the thickness of the foldable substrate. Providing transition regions of sufficiently small length (eg, about 5 mm or less) can reduce the amount of foldable devices and/or foldable substrates having intermediate thicknesses that can have reduced Small impact resistance and/or reduced puncture resistance. Additionally, providing the first transition region and/or the second transition region with regions of tensile stress may counteract the strain between the first or second portion and the first and/or second transition portion during folding, the tension The stress region contains a maximum tensile stress greater than the maximum tensile stress of the central tensile stress region of the central portion. Additionally, providing the first transition region and/or the second transition region with a region of tensile stress can counteract the strain between the central portion and the first and/or second transition portion during folding, the region of tensile stress comprising greater than The maximum tensile stress of the maximum tensile stress of the first tensile stress region of the first portion and/or the second tensile stress region of the second portion.

本揭露內容之實施例之設備及方法可藉由控制(例如,限制、減小、等化)作為化學強化之結果的可折疊設備及/或可折疊基板之不同部分之膨脹之間的差,來減少(例如,減輕、消除)機械不穩定性、設備疲勞及/或設備故障之發生。控制不同部分之膨脹之間的差可減小可折疊設備及/或可折疊基板之部分之間的化學強化誘發應變,此可有助於在可折疊設備及/或可折疊基板達到臨界挫曲應變(例如,機械不穩定性之開始)前之更大折疊誘發應變。另外,減小機械不穩定性及/或核心層與第一外層及/或第一外層之間的差或中心部分與第一部分及/或第二部分之間的差可減少光學失真,例如,由因此(等)差在可折疊設備及/或可折疊基板內之應變造成。The devices and methods of embodiments of the present disclosure can be achieved by controlling (eg, limiting, reducing, equalizing) the difference between the expansion of different portions of the foldable device and/or foldable substrate as a result of chemical strengthening, to reduce (eg, mitigate, eliminate) the occurrence of mechanical instability, equipment fatigue and/or equipment failure. Controlling the difference between the expansions of the different parts can reduce chemical strengthening induced strains between parts of the foldable device and/or foldable substrate, which can help to achieve critical buckling at the foldable device and/or foldable substrate Greater folding induces strain prior to strain (eg, the onset of mechanical instability). Additionally, reducing mechanical instabilities and/or the difference between the core layer and the first outer layer and/or the first outer layer or the difference between the central portion and the first portion and/or the second portion may reduce optical distortion, eg, Caused by the (etc.) difference in strain within the foldable device and/or the foldable substrate.

在一些實施例中,提供包含一層壓件之一可折疊設備及/或可折疊基板可實現對在一單一化學強化製程中在第一部分、第二部分及中心部分之間的膨脹差之控制。舉例而言,核心層相對於第一外層及/或第二外層之性質可實現可折疊設備及/或可折疊基板之實質上均勻膨脹。在一些實施例中,核心層之密度可大於第一外層及/或第二外層之密度。在一些實施例中,核心層之熱膨脹係數可大於第一外層及/或第二外層之熱膨脹係數。在一些實施例中,核心層之網路擴張係數可小於第一外層及/或第二外層之網路擴張係數。另外,提供具有與第一外層及/或第二外層之關係的一核心層可減小(例如,最小化)折疊可折疊設備及/或可折疊基板之力。In some embodiments, providing a foldable device and/or foldable substrate comprising a laminate may enable control of the differential expansion between the first portion, the second portion, and the center portion in a single chemical strengthening process. For example, the properties of the core layer relative to the first outer layer and/or the second outer layer may enable substantially uniform expansion of the foldable device and/or foldable substrate. In some embodiments, the density of the core layer may be greater than the density of the first outer layer and/or the second outer layer. In some embodiments, the thermal expansion coefficient of the core layer may be greater than the thermal expansion coefficient of the first outer layer and/or the second outer layer. In some embodiments, the network expansion coefficient of the core layer may be smaller than the network expansion coefficient of the first outer layer and/or the second outer layer. Additionally, providing a core layer in relationship to the first outer layer and/or the second outer layer may reduce (eg, minimize) the force of folding the foldable device and/or the foldable substrate.

作為化學強化之結果,與中心部分相比,提供包含靠近(例如,在基於氧化物的百萬分之100、百萬分之10內)中心部分之一或多種鹼金屬之濃度的一或多種鹼金屬之平均濃度的一第一部分及/或一第二部分可最小化第一部分及/或第二部分之膨脹差。實質上均勻膨脹可減少作為化學強化之結果的機械變形及/或機械不穩定性之發生。As a result of chemical strengthening, providing one or more compounds comprising a concentration of one or more alkali metals near (eg, within 100 ppm, 10 ppm on an oxide basis) of the central portion compared to the central portion A first portion and/or a second portion of the average concentration of alkali metal can minimize the differential expansion of the first portion and/or the second portion. Substantially uniform expansion reduces the occurrence of mechanical deformation and/or mechanical instability as a result of chemical strengthening.

作為化學強化之結果,與中心部分相比,提供靠近(例如,在0.5%內、在0.1%內、在0.01%內)中心部分之對應比率的層深度對第一部分及/或第二部分之厚度的一比率可最小化第一部分及/或第二部分之近表面膨脹之差。將近表面膨脹之差最小化可減小第一主表面、第二主表面、第一中心表面區及/或第二中心表面區之一平面中的應力及/或應變,此可進一步減少作為化學強化之結果的機械變形及/或機械不穩定性之發生。As a result of chemical strengthening, providing a corresponding ratio of depth of layer to the first and/or second portion near (eg, within 0.5%, within 0.1%, within 0.01%) of the center portion compared to the center portion A ratio of thicknesses may minimize the difference in near-surface expansion of the first portion and/or the second portion. Minimizing the difference in near-surface expansion can reduce stress and/or strain in one of the planes of the first major surface, the second major surface, the first central surface region, and/or the second central surface region, which can further reduce as a chemical The occurrence of mechanical deformation and/or mechanical instability as a result of strengthening.

提供靠近(例如,在1%內、在0.5%內、在0.1%內)中心部分之對應比率的壓縮深度對第一部分及/或第二部分之厚度的一比率可最小化第一部分及/或第二部分相對於中心部分的化學強化誘發應變之間的差。將化學強化誘發應變之差最小化可減少作為化學強化之結果的機械變形及/或機械不穩定性之發生。Providing a ratio of the depth of compression to the thickness of the first portion and/or the second portion near (eg, within 1%, within 0.5%, within 0.1%) of the corresponding ratio of the central portion can minimize the first portion and/or The difference between the chemical strengthening induced strain of the second part relative to the central part. Minimizing the difference in chemical strengthening induced strain can reduce the occurrence of mechanical deformation and/or mechanical instability as a result of chemical strengthening.

將第一主表面、第二主表面、第一中心表面區及/或第二中心表面區中之應力及/或應變最小化可減少應力誘發之光學失真。又,將此等應力最小化可增大抗刺紮性及/或抗衝擊性。又,將此等應力最小化可與沿著一中心線的低光學阻滯差(例如,約2奈米或更小)相關聯。另外,將此等應力最小化可減少作為化學強化之結果的機械變形及/或機械不穩定性之發生。Minimizing stress and/or strain in the first major surface, the second major surface, the first central surface region, and/or the second central surface region can reduce stress-induced optical distortion. Again, minimizing these stresses may increase puncture resistance and/or impact resistance. Also, minimizing these stresses can be associated with low optical retardation differences (eg, about 2 nanometers or less) along a centerline. Additionally, minimizing these stresses may reduce the occurrence of mechanical deformation and/or mechanical instability as a result of chemical strengthening.

本揭露內容之方法可實現製作包含以上提到之益處中之一或多者的可折疊基板。在一些實施例中,本揭露內容之方法可在一單一化學強化步驟中達成以上提到之益處,例如,製作包含一層壓件之一可折疊基板,此可減少與生產可折疊基板相關聯之時間、裝備、空間及人力成本。在一些實施例中,可在可折疊基板之任何化學強化前提供或形成現有凹座(例如,自第一主表面凹進之現有第一中心表面區、自第二主表面凹進之現有第二中心表面區),此可提供針對具有比可以其他方式達成之凹座深的凹座(例如,更大第一距離、更大第二距離)之可折疊設備之以上益處。在一些實施例中,可藉由以下步驟來提供以上益處:化學強化可折疊基板,蝕刻可折疊基板之中心部分(例如,蝕刻一現有第一中心表面區以形成形成一新第一中心表面區、蝕刻一現有第二中心表面區以形成形成一新第二中心表面區),及接著進一步化學強化該可折疊基板。在另外實施例中,可藉由控制相對於該進一步化學強化之第二時間週期控制該化學強化之一時間週期及/或自中心部分蝕刻之一厚度來提供以上益處。提供該進一步化學強化該可折疊基板可達成較大壓縮應力,而不會遇到機械變形及/或機械不穩定性,且較大壓縮應力可進一步增大可折疊基板之抗衝擊性及/或抗刺紮性。The methods of the present disclosure may enable the fabrication of foldable substrates that include one or more of the above-mentioned benefits. In some embodiments, the methods of the present disclosure can achieve the above-mentioned benefits in a single chemical strengthening step, eg, fabricating a foldable substrate comprising a laminate, which can reduce the labor associated with producing the foldable substrate Time, equipment, space and labor costs. In some embodiments, existing recesses may be provided or formed prior to any chemical strengthening of the foldable substrate (eg, existing first central surface region recessed from the first major surface, existing second two central surface areas), which may provide the above benefits for foldable devices with deeper pockets (eg, greater first distance, greater second distance) than pockets that could otherwise be achieved. In some embodiments, the above benefits may be provided by chemically strengthening the foldable substrate, etching a central portion of the foldable substrate (eg, etching an existing first central surface region to form a new first central surface region) , etching an existing second central surface region to form a new second central surface region), and then further chemically strengthening the foldable substrate. In further embodiments, the above benefits may be provided by controlling a time period of the chemical strengthening relative to a second time period of the further chemical strengthening and/or a thickness etched from the central portion. Providing the further chemical strengthening of the foldable substrate can achieve greater compressive stress without encountering mechanical deformation and/or mechanical instability, and the greater compressive stress can further increase the impact resistance of the foldable substrate and/or Puncture resistance.

以下描述本揭露內容之一些實例實施例,同時理解,各種實施例之特徵中之任何者可單獨地或相互結合地使用。Some example embodiments of the present disclosure are described below, with the understanding that any of the features of the various embodiments may be used alone or in combination with each other.

實施例1.一種可折疊基板包含界定於一第一主表面與與該第一主表面相對之一第二主表面之間的一基板厚度。該基板厚度在自約100微米至約2毫米之一範圍中。該可折疊基板包含一第一外層,其包含該第一主表面及與該第一主表面相對之一第一內表面。一第一外厚度界定於該第一主表面與該第一內表面之間。該第一外層包含由一第一最小距離分開之一第一部分及一第二部分。該第一部分包含該第一主表面及該第一內表面。該第二部分包含該第一主表面及該第一內表面。該可折疊基板包含一第二外層,其包含該第二主表面及與該第二主表面相對之一第二內表面。該第二外層包含界定於該第二主表面與該第二內表面之間的一第二外厚度。該第二外層包含由一第二最小距離分開之一第三部分及一第四部分。該第三部分包含該第二主表面及該第二內表面。該第四部分包含該第二主表面及該第二內表面。該可折疊基板包含一核心層,其包含一第三內表面及與該第三內表面相對之一第四內表面。一中心厚度界定於該第三內表面與該第四內表面之間。該中心厚度在自約25微米至約80微米之一範圍中。該核心層定位於該第一外層與該第二外層之間。該第三內表面接觸該第一部分之該第一內表面及該第二部分之該第一內表面。一第一中心表面區定位於該第一外層之該第一部分與該第一外層之該第二部分之間。該第四內表面接觸該第三部分之該第二內表面及該第四部分之該第二內表面。一第二中心表面區定位於該第二外層之該第三部分與該第二外層之該第四部分之間。該第一中心表面區自該第一主表面凹進去一第一距離。該第二中心表面區自該第二主表面凹進去一第二距離。Embodiment 1. A foldable substrate comprising a substrate thickness defined between a first major surface and a second major surface opposite the first major surface. The substrate thickness is in a range from about 100 microns to about 2 millimeters. The foldable substrate includes a first outer layer including the first main surface and a first inner surface opposite the first main surface. A first outer thickness is defined between the first major surface and the first inner surface. The first outer layer includes a first portion and a second portion separated by a first minimum distance. The first portion includes the first main surface and the first inner surface. The second portion includes the first main surface and the first inner surface. The foldable substrate includes a second outer layer including the second main surface and a second inner surface opposite the second main surface. The second outer layer includes a second outer thickness defined between the second major surface and the second inner surface. The second outer layer includes a third portion and a fourth portion separated by a second minimum distance. The third portion includes the second main surface and the second inner surface. The fourth portion includes the second main surface and the second inner surface. The foldable substrate includes a core layer including a third inner surface and a fourth inner surface opposite the third inner surface. A central thickness is defined between the third inner surface and the fourth inner surface. The center thickness is in a range from about 25 microns to about 80 microns. The core layer is positioned between the first outer layer and the second outer layer. The third inner surface contacts the first inner surface of the first portion and the first inner surface of the second portion. A first central surface region is positioned between the first portion of the first outer layer and the second portion of the first outer layer. The fourth inner surface contacts the second inner surface of the third portion and the second inner surface of the fourth portion. A second central surface region is positioned between the third portion of the second outer layer and the fourth portion of the second outer layer. The first central surface region is recessed a first distance from the first major surface. The second central surface region is recessed a second distance from the second major surface.

實施例2.如實施例1所述之可折疊基板,其中該核心層包含大於該第一外層之一第一熱膨脹係數的一核心熱膨脹係數。該核心熱膨脹係數大於該第二外層之一第二熱膨脹係數。Embodiment 2. The foldable substrate of Embodiment 1, wherein the core layer comprises a core thermal expansion coefficient greater than a first thermal expansion coefficient of the first outer layer. The core thermal expansion coefficient is greater than a second thermal expansion coefficient of the second outer layer.

實施例3.如實施例2所述之可折疊基板,其中該第一熱膨脹係數實質上等於該第二熱膨脹係數。Embodiment 3. The foldable substrate of Embodiment 2, wherein the first coefficient of thermal expansion is substantially equal to the second coefficient of thermal expansion.

實施例4.如實施例2至3中任一項所述之可折疊基板,其中該核心熱膨脹係數比該第一熱膨脹係數大自約10 × 10-7-1 至約70 × 10-7-1Embodiment 4. The foldable substrate of any one of embodiments 2 to 3, wherein the core thermal expansion coefficient is greater than the first thermal expansion coefficient from about 10×10 −7 °C −1 to about 70 × 10 −7 °C -1 .

實施例5.如實施例1至4中任一項所述之可折疊基板,其中該核心層之一核心密度大於該第一外層之一第一密度。該核心密度大於該第二外層之一第二密度。Embodiment 5. The foldable substrate of any one of Embodiments 1-4, wherein a core density of the core layer is greater than a first density of the first outer layer. The core density is greater than a second density of the second outer layer.

實施例6.如實施例5所述之可折疊基板,其中該核心密度比該第一密度大自約每立方公分0.01公克至約0.05公克(g/cm3 )。Embodiment 6. The foldable substrate of Embodiment 5, wherein the core density is greater than the first density by from about 0.01 grams per cubic centimeter to about 0.05 grams per cubic centimeter (g/cm 3 ).

實施例7.如實施例5至6中任一項所述之可折疊基板,其中該第一密度實質上等於該第二密度。Embodiment 7. The foldable substrate of any one of Embodiments 5-6, wherein the first density is substantially equal to the second density.

實施例8.如實施例1至7中任一項所述之可折疊基板,其中該核心層之一核心網路擴張係數小於該第一外層之一第一網路擴張係數。該核心網路擴張係數小於該第二外層之一第二網路擴張係數。Embodiment 8. The foldable substrate of any one of Embodiments 1 to 7, wherein a core network expansion coefficient of the core layer is smaller than a first network expansion coefficient of the first outer layer. The core network expansion factor is smaller than a second network expansion factor of the second outer layer.

實施例9.如實施例8所述之可折疊基板,其中該第一網路擴張係數實質上等於該第二網路擴張係數。Embodiment 9. The foldable substrate of Embodiment 8, wherein the first network expansion coefficient is substantially equal to the second network expansion coefficient.

實施例10.如實施例1至9中任一項所述之可折疊基板,其中該第一最小距離在自約5毫米至約50毫米之一範圍中。Embodiment 10. The foldable substrate of any one of Embodiments 1-9, wherein the first minimum distance is in a range from about 5 millimeters to about 50 millimeters.

實施例11.如實施例1至10中任一項所述之可折疊基板,其中該第一最小距離實質上等於該第二最小距離。Embodiment 11. The foldable substrate of any one of Embodiments 1-10, wherein the first minimum distance is substantially equal to the second minimum distance.

實施例12.如實施例1至11中任一項所述之可折疊基板,其中該第一外厚度實質上等於該第二外厚度。Embodiment 12. The foldable substrate of any one of Embodiments 1-11, wherein the first outer thickness is substantially equal to the second outer thickness.

實施例13.如實施例1至12中任一項所述之可折疊基板,其中該基板厚度在自約125微米至約200微米之一範圍中。Embodiment 13. The foldable substrate of any one of Embodiments 1-12, wherein the substrate thickness is in a range from about 125 microns to about 200 microns.

實施例14.如實施例1至13中任一項所述之可折疊基板,其中該中心厚度在自約25微米至約60微米之一範圍中。Embodiment 14. The foldable substrate of any one of Embodiments 1-13, wherein the center thickness is in a range from about 25 microns to about 60 microns.

實施例15.如實施例1至14中任一項所述之可折疊基板,其中該第一外層包含一基於玻璃之基板。Embodiment 15. The foldable substrate of any one of Embodiments 1-14, wherein the first outer layer comprises a glass-based substrate.

實施例16.如實施例1至14中任一項所述之可折疊基板,其中該第一外層包含一基於陶瓷之基板。Embodiment 16. The foldable substrate of any one of Embodiments 1-14, wherein the first outer layer comprises a ceramic-based substrate.

實施例17.如實施例1至16中任一項所述之可折疊基板,其中該核心層包含一基於玻璃之基板。Embodiment 17. The foldable substrate of any one of Embodiments 1-16, wherein the core layer comprises a glass-based substrate.

實施例18.如實施例1至16中任一項所述之可折疊基板,其中該核心層包含一基於陶瓷之基板。Embodiment 18. The foldable substrate of any one of Embodiments 1-16, wherein the core layer comprises a ceramic-based substrate.

實施例19.如實施例1至17中任一項所述之可折疊基板,進一步包含一塗層,該塗層安置於該第一主表面上且填充界定於該第一中心表面區與由該第一主表面界定之一第一平面之間的一凹座。Embodiment 19. The foldable substrate of any one of Embodiments 1-17, further comprising a coating disposed on the first major surface and filling the region defined by the first central surface and formed by The first major surface defines a recess between a first plane.

實施例20.如實施例1至19中任一項所述之可折疊基板,其中該第一外層包含以氧化物為基礎的一第一平均鉀濃度,該第二外層包含以氧化物為基礎的一第二平均鉀濃度,且定位於該第一中心表面區與該第二中心表面區之間的該核心層之一中心部分包含以氧化物為基礎的一中心平均鉀濃度。該第一平均鉀濃度與該中心平均鉀濃度之間的一絕對差為約百萬分之100或更小。Embodiment 20. The foldable substrate of any one of embodiments 1-19, wherein the first outer layer comprises a first oxide-based average potassium concentration and the second outer layer comprises an oxide-based and a central portion of the core layer positioned between the first central surface region and the second central surface region comprises a central average potassium concentration on an oxide basis. An absolute difference between the first average potassium concentration and the central average potassium concentration is about 100 parts per million or less.

實施例21.如實施例20所述之可折疊基板,其中該第二平均鉀濃度與該中心平均鉀濃度之間的一絕對差為約百萬分之100或更小。Embodiment 21. The foldable substrate of Embodiment 20, wherein an absolute difference between the second average potassium concentration and the central average potassium concentration is about 100 parts per million or less.

實施例22.如實施例1至21中任一項所述之可折疊基板,進一步包含一第一壓縮應力區域,其自在該第一主表面處的該第一外層之該第一部分延伸至一第一壓縮深度。該可折疊基板包含一第二壓縮應力區域,其自在該第二主表面處的該第二外層之該第三部分延伸至一第二壓縮深度。該可折疊基板包含一第三壓縮應力區域,其自在該第一主表面處的該第一外層之該第二部分延伸至一第三壓縮深度。該可折疊基板包含一第四壓縮應力區域,其自在該第二主表面處的該第二外層之該第四部分延伸至一第四壓縮深度。該可折疊基板包含一第一中心壓縮應力區域,其自該第一中心表面區延伸至一第一中心壓縮深度。該可折疊基板包含一第二中心壓縮應力區域,其延伸至自該第二中心表面區延伸之一第二中心壓縮深度。Embodiment 22. The foldable substrate of any one of Embodiments 1-21, further comprising a first region of compressive stress extending from the first portion of the first outer layer at the first major surface to a The first compression depth. The foldable substrate includes a second region of compressive stress extending from the third portion of the second outer layer at the second major surface to a second depth of compression. The foldable substrate includes a third region of compressive stress extending from the second portion of the first outer layer at the first major surface to a third depth of compression. The foldable substrate includes a fourth region of compressive stress extending from the fourth portion of the second outer layer at the second major surface to a fourth depth of compression. The foldable substrate includes a first central compressive stress region extending from the first central surface region to a first central compressive depth. The foldable substrate includes a second central compressive stress region extending to a second central compressive depth extending from the second central surface region.

實施例23.如實施例22所述之可折疊基板,其中作為該基板厚度之一百分比的該第一壓縮深度與作為該中心厚度之一百分比的該第一中心壓縮深度之間的一絕對差為約1%或更小。Embodiment 23. The foldable substrate of Embodiment 22, wherein an absolute difference between the first compression depth as a percentage of the substrate thickness and the first central compression depth as a percentage of the center thickness is about 1% or less.

實施例24.如實施例22至23中任一項所述之可折疊基板,其中作為該基板厚度之一百分比的該第三壓縮深度與作為該中心厚度之一百分比的該第一中心壓縮深度之間的一絕對差為約1%或更小。Embodiment 24. The foldable substrate of any one of Embodiments 22-23, wherein the third depth of compression as a percentage of the thickness of the substrate and the first depth of compression as a percentage of the center thickness An absolute difference between is about 1% or less.

實施例25.如實施例22至24中任一項所述之可折疊基板,其中作為該基板厚度之一百分比的該第二壓縮深度與作為該中心厚度之一百分比的該第二中心壓縮深度之間的一絕對差為約1%或更小。Embodiment 25. The foldable substrate of any one of Embodiments 22-24, wherein the second depth of compression as a percentage of the thickness of the substrate and the second depth of compression as a percentage of the center thickness An absolute difference between is about 1% or less.

實施例26.如實施例22至25中任一項所述之可折疊基板,其中作為該基板厚度之一百分比的該第四壓縮深度與作為該中心厚度之一百分比的該第二中心壓縮深度之間的一絕對差為約1%或更小。Embodiment 26. The foldable substrate of any one of Embodiments 22-25, wherein the fourth depth of compression as a percentage of the thickness of the substrate and the second depth of compression as a percentage of the center thickness An absolute difference between is about 1% or less.

實施例27.如實施例22至26中任一項所述之可折疊基板,其中該第一部分包含與該第一壓縮深度相關聯的一或多種鹼金屬離子之一第一層深度。該第三部分包含與該第二壓縮深度相關聯的一或多種鹼金屬離子之一第二層深度。該第二部分包含與該第三壓縮深度相關聯的一或多種鹼金屬離子之一第三層深度。該第四部分包含與該第四壓縮深度相關聯的一或多種鹼金屬離子之一第四層深度。該中心部分包含與該第一中心壓縮深度相關聯的一或多種鹼金屬離子之一第一中心層深度。該中心部分包含與該第二中心壓縮深度相關聯的一或多種鹼金屬離子之一第二中心層深度。作為該基板厚度之一百分比的該第一層深度與作為該中心厚度之一百分比的一第一中心層深度之間的一絕對差為約0.5%或更小。Embodiment 27. The foldable substrate of any one of Embodiments 22-26, wherein the first portion comprises a first layer depth of one or more alkali metal ions associated with the first compression depth. The third portion includes a second layer depth of one or more alkali metal ions associated with the second compression depth. The second portion includes a third layer depth of one or more alkali metal ions associated with the third compression depth. The fourth portion includes a fourth layer depth of one or more alkali metal ions associated with the fourth compression depth. The central portion includes a first central layer depth of one or more alkali metal ions associated with the first central compression depth. The central portion includes a second central layer depth of one or more alkali metal ions associated with the second central compression depth. An absolute difference between the first layer depth as a percentage of the substrate thickness and a first center layer depth as a percentage of the center thickness is about 0.5% or less.

實施例28.如實施例27所述之可折疊基板,其中作為該基板厚度之一百分比的該第三層深度與作為該中心厚度之一百分比的該第一中心層深度之間的一絕對差為約0.5%或更小。Embodiment 28. The foldable substrate of Embodiment 27, wherein an absolute difference between the depth of the third layer as a percentage of the substrate thickness and the depth of the first center layer as a percentage of the center thickness is about 0.5% or less.

實施例29.如實施例27至28中任一項所述之可折疊基板,其中作為該基板厚度之一百分比的該第二層深度與作為該中心厚度之一百分比的該第二中心層深度之間的一絕對差為約0.5%或更小。Embodiment 29. The foldable substrate of any one of Embodiments 27-28, wherein the second layer depth as a percentage of the substrate thickness and the second center layer depth as a percentage of the center thickness An absolute difference between is about 0.5% or less.

實施例30.如實施例27至29中任一項所述之可折疊基板,其中作為該基板厚度之一百分比的該第四層深度與作為該中心厚度之一百分比的該第二中心層深度之間的一絕對差為約0.5%或更小。Embodiment 30. The foldable substrate of any one of Embodiments 27-29, wherein the fourth layer depth as a percentage of the substrate thickness and the second center layer depth as a percentage of the center thickness An absolute difference between is about 0.5% or less.

實施例31.如實施例1至30中任一項所述之可折疊基板,其中該第二中心表面區自該第二主表面區凹進一第二距離。該第二距離為自該基板厚度之約5%至約20%。Embodiment 31. The foldable substrate of any one of Embodiments 1-30, wherein the second central surface region is recessed a second distance from the second major surface region. The second distance is from about 5% to about 20% of the thickness of the substrate.

實施例32.如實施例31所述之可折疊基板,其中該第一距離實質上等於該第二距離。Embodiment 32. The foldable substrate of Embodiment 31, wherein the first distance is substantially equal to the second distance.

實施例33.一種可折疊基板包含界定於一第一主表面與與該第一主表面相對之一第二主表面之間的一基板厚度。該基板厚度在自約100微米至約2毫米之一範圍中。該可折疊基板包含包含該基板厚度之一第一部分。該第一部分包含一第一壓縮應力區域,其自該第一主表面延伸至一第一壓縮深度。該第一部分包含一第二壓縮應力區域,其自該第二主表面延伸至一第二壓縮深度。該第一部分包含與該第一壓縮深度相關聯的一或多種鹼金屬離子之一第一層深度。該第一部分包含與該第二壓縮深度相關聯的一或多種鹼金屬離子之一第二層深度。該可折疊基板包含包含該基板厚度之一第二部分。該第二部分包含一第三壓縮應力區域,其自該第一主表面延伸至一第三壓縮深度。該第二部分包含一第四壓縮應力區域,其自該第二主表面延伸至一第四壓縮深度。該第二部分包含與該第三壓縮深度相關聯的一或多種鹼金屬離子之一第三層深度。該第二部分包含與該第四壓縮深度相關聯的一或多種鹼金屬離子之一第四層深度。該可折疊基板包含定位於該第一部分與該第二部分之間的一中心部分。該中心部分包含界定於一第一中心表面區與與該第一中心表面區相對之一第二中心表面區之間的一中心厚度。該中心部分包含一第一中心壓縮應力區域,其自該第一中心表面區延伸至一第一中心壓縮深度。該中心部分包含一第二中心壓縮應力區域,其自該第二中心表面區延伸至一第二中心壓縮深度。該中心部分包含與該第一中心壓縮深度相關聯的一或多種鹼金屬離子之一第一中心層深度。該中心部分包含與該第二中心壓縮深度相關聯的該一或多種鹼金屬離子之一第二中心層深度。該中心厚度在自約25微米至約80微米之一範圍中。該第一中心表面區自該第一主表面凹進去一第一距離。作為該基板厚度之一百分比的該第一層深度與作為該中心厚度之一百分比的該第一中心層深度之間的一絕對差為約0.5%或更小。Embodiment 33. A foldable substrate comprising a substrate thickness defined between a first major surface and a second major surface opposite the first major surface. The substrate thickness is in a range from about 100 microns to about 2 millimeters. The foldable substrate includes a first portion comprising a thickness of the substrate. The first portion includes a first region of compressive stress extending from the first major surface to a first compressive depth. The first portion includes a second region of compressive stress extending from the second major surface to a second depth of compression. The first portion includes a first layer depth of one or more alkali metal ions associated with the first compression depth. The first portion includes a second layer depth of one or more alkali metal ions associated with the second compression depth. The foldable substrate includes a second portion comprising the thickness of the substrate. The second portion includes a third region of compressive stress extending from the first major surface to a third depth of compression. The second portion includes a fourth region of compressive stress extending from the second major surface to a fourth depth of compression. The second portion includes a third layer depth of one or more alkali metal ions associated with the third compression depth. The second portion includes a fourth layer depth of one or more alkali metal ions associated with the fourth compression depth. The foldable substrate includes a central portion positioned between the first portion and the second portion. The central portion includes a central thickness defined between a first central surface region and a second central surface region opposite the first central surface region. The central portion includes a first central compressive stress region extending from the first central surface region to a first central compressive depth. The central portion includes a second central compressive stress region extending from the second central surface region to a second central compressive depth. The central portion includes a first central layer depth of one or more alkali metal ions associated with the first central compression depth. The central portion includes a second central layer depth of one of the one or more alkali metal ions associated with the second central compression depth. The center thickness is in a range from about 25 microns to about 80 microns. The first central surface region is recessed a first distance from the first major surface. An absolute difference between the first layer depth as a percentage of the substrate thickness and the first center layer depth as a percentage of the center thickness is about 0.5% or less.

實施例34.如實施例33所述之可折疊基板,其中作為該基板厚度之一百分比的該第三層深度與作為該中心厚度之一百分比的該第一中心層深度之間的一絕對差為約0.5%或更小。Embodiment 34. The foldable substrate of Embodiment 33, wherein an absolute difference between the depth of the third layer as a percentage of the substrate thickness and the depth of the first center layer as a percentage of the center thickness is about 0.5% or less.

實施例35.如實施例33至34中任一項所述之可折疊基板,其中作為該基板厚度之一百分比的該第二層深度與作為該中心厚度之一百分比的該第二中心層深度之間的一絕對差為約0.5%或更小。Embodiment 35. The foldable substrate of any one of Embodiments 33-34, wherein the second layer depth as a percentage of the substrate thickness and the second center layer depth as a percentage of the center thickness An absolute difference between is about 0.5% or less.

實施例36.如實施例33至35中任一項所述之可折疊基板,其中作為該基板厚度之一百分比的該第四層深度與作為該中心厚度之一百分比的該第二中心層深度之間的一絕對差為約0.5%或更小。Embodiment 36. The foldable substrate of any one of Embodiments 33-35, wherein the fourth layer depth as a percentage of the substrate thickness and the second center layer depth as a percentage of the center thickness An absolute difference between is about 0.5% or less.

實施例37.如實施例33至36中任一項所述之可折疊基板,其中該第一部分包含以氧化物為基礎的一第一平均鉀濃度,該第二部分包含以氧化物為基礎的一第二平均鉀濃度,且該中心部分包含以氧化物為基礎的一中心平均鉀濃度。該第一平均鉀濃度與該中心平均鉀濃度之間的一絕對差為約百萬分之100或更小。Embodiment 37. The foldable substrate of any one of Embodiments 33-36, wherein the first portion comprises a first average potassium concentration based on oxide and the second portion comprises oxide based A second average potassium concentration, and the central portion contains a central average potassium concentration on an oxide basis. An absolute difference between the first average potassium concentration and the central average potassium concentration is about 100 parts per million or less.

實施例38.一種可折疊基板包含界定於一第一主表面與與該第一主表面相對之一第二主表面之間的一基板厚度。該基板厚度在自約100微米至約2毫米之一範圍中。該可折疊基板包含包含該基板厚度之一第一部分。該第一部分包含以氧化物為基礎的一第一平均鉀濃度。該第一部分包含一第一壓縮應力區域,其自該第一主表面延伸至一第一壓縮深度。該第一部分包含一第二壓縮應力區域,其自該第二主表面延伸至一第二壓縮深度。該可折疊基板包含包含該基板厚度之一第二部分。該第二部分包含以氧化物為基礎的一第二平均鉀濃度。該第二部分包含一第三壓縮應力區域,其自該第一主表面延伸至一第三壓縮深度。該第二部分包含一第四壓縮應力區域,其自該第二主表面延伸至一第四壓縮深度。該可折疊基板包含定位於該第一部分與該第二部分之間的一中心部分。該中心部分包含界定於一第一中心表面區與與該第一中心表面區相對之一第二中心表面區之間的一中心厚度。該中心部分包含以氧化物為基礎的一中心平均鉀濃度。該中心部分包含一第一中心壓縮應力區域,其自該第一中心表面區延伸至一第一中心壓縮深度。該中心部分包含一第二中心壓縮應力區域,其自該第二中心表面區延伸至一第二中心壓縮深度。該中心厚度在自約25微米至約80微米之一範圍中。該第一中心表面區自該第一主表面凹進去一第一距離。該第一平均鉀濃度與該中心平均鉀濃度之間的一絕對差為約百萬分之100或更小。Embodiment 38. A foldable substrate comprising a substrate thickness defined between a first major surface and a second major surface opposite the first major surface. The substrate thickness is in a range from about 100 microns to about 2 millimeters. The foldable substrate includes a first portion comprising a thickness of the substrate. The first portion contains a first average potassium concentration on an oxide basis. The first portion includes a first region of compressive stress extending from the first major surface to a first compressive depth. The first portion includes a second region of compressive stress extending from the second major surface to a second depth of compression. The foldable substrate includes a second portion comprising the thickness of the substrate. The second portion contains a second average potassium concentration on an oxide basis. The second portion includes a third region of compressive stress extending from the first major surface to a third depth of compression. The second portion includes a fourth region of compressive stress extending from the second major surface to a fourth depth of compression. The foldable substrate includes a central portion positioned between the first portion and the second portion. The central portion includes a central thickness defined between a first central surface region and a second central surface region opposite the first central surface region. The central portion contains a central average potassium concentration on an oxide basis. The central portion includes a first central compressive stress region extending from the first central surface region to a first central compressive depth. The central portion includes a second central compressive stress region extending from the second central surface region to a second central compressive depth. The center thickness is in a range from about 25 microns to about 80 microns. The first central surface region is recessed a first distance from the first major surface. An absolute difference between the first average potassium concentration and the central average potassium concentration is about 100 parts per million or less.

實施例39.如實施例37至38中任一項所述之可折疊基板,其中該第二平均鉀濃度與該中心平均鉀濃度之間的一絕對差為約百萬分之100或更小。Embodiment 39. The foldable substrate of any one of embodiments 37-38, wherein an absolute difference between the second average potassium concentration and the central average potassium concentration is about 100 parts per million or less .

實施例40.如實施例33至39中任一項所述之可折疊基板,其中作為該基板厚度之一百分比的該第一壓縮深度與作為該中心厚度之一百分比的該第一中心壓縮深度之間的一絕對差為約1%或更小。Embodiment 40. The foldable substrate of any one of Embodiments 33-39, wherein the first depth of compression as a percentage of the thickness of the substrate and the first depth of compression as a percentage of the center thickness An absolute difference between is about 1% or less.

實施例41.一種可折疊基板包含界定於一第一主表面與與該第一主表面相對之一第二主表面之間的一基板厚度。該基板厚度在自約100微米至約2毫米之一範圍中。該可折疊基板包含包含該基板厚度之一第一部分。該第一部分包含一第一壓縮應力區域,其自該第一主表面延伸至一第一壓縮深度。該第一部分包含一第二壓縮應力區域,其自該第二主表面延伸至一第二壓縮深度。該可折疊基板包含包含該基板厚度之一第二部分。該第二部分包含一第三壓縮應力區域,其自該第一主表面延伸至一第三壓縮深度。該第二部分包含一第四壓縮應力區域,其自該第二主表面延伸至一第四壓縮深度。該可折疊基板包含一中心部分,該中心部分包含界定於一第一中心表面區與與該第一中心表面區相對之一第二中心表面區之間的一中心厚度。該中心部分包含一第一中心壓縮應力區域,其自該第一中心表面區延伸至一第一中心壓縮深度。該中心部分包含一第二中心壓縮應力區域,其自該第二中心表面區延伸至一第二中心壓縮深度。該中心厚度在自約25微米至約80微米之一範圍中。該第一中心表面區自該第一主表面凹進去一第一距離。該中心部分定位於該第一部分與該第二部分之間。作為該基板厚度之一百分比的該第一壓縮深度與作為該中心厚度之一百分比的該第一中心壓縮深度之間的一絕對差為約1%或更小。Embodiment 41. A foldable substrate comprising a substrate thickness defined between a first major surface and a second major surface opposite the first major surface. The substrate thickness is in a range from about 100 microns to about 2 millimeters. The foldable substrate includes a first portion comprising a thickness of the substrate. The first portion includes a first region of compressive stress extending from the first major surface to a first compressive depth. The first portion includes a second region of compressive stress extending from the second major surface to a second depth of compression. The foldable substrate includes a second portion comprising the thickness of the substrate. The second portion includes a third region of compressive stress extending from the first major surface to a third depth of compression. The second portion includes a fourth region of compressive stress extending from the second major surface to a fourth depth of compression. The foldable substrate includes a central portion including a central thickness defined between a first central surface region and a second central surface region opposite the first central surface region. The central portion includes a first central compressive stress region extending from the first central surface region to a first central compressive depth. The central portion includes a second central compressive stress region extending from the second central surface region to a second central compressive depth. The center thickness is in a range from about 25 microns to about 80 microns. The first central surface region is recessed a first distance from the first major surface. The central portion is positioned between the first portion and the second portion. An absolute difference between the first compression depth as a percentage of the substrate thickness and the first central compression depth as a percentage of the center thickness is about 1% or less.

實施例42.如實施例40至41中任一項所述之可折疊基板,其中作為該基板厚度之一百分比的該第三壓縮深度與作為該中心厚度之一百分比的該第一中心壓縮深度之間的一絕對差為約1%或更小。Embodiment 42. The foldable substrate of any one of Embodiments 40-41, wherein the third depth of compression as a percentage of the thickness of the substrate and the first depth of compression as a percentage of the center thickness An absolute difference between is about 1% or less.

實施例43.如實施例40至42中任一項所述之可折疊基板,其中作為該基板厚度之一百分比的該第二壓縮深度與作為該中心厚度之一百分比的該第二中心壓縮深度之間的一絕對差為約1%或更小。Embodiment 43. The foldable substrate of any one of Embodiments 40-42, wherein the second depth of compression as a percentage of the thickness of the substrate and the second depth of compression as a percentage of the center thickness An absolute difference between is about 1% or less.

實施例44.如實施例40至43中任一項所述之可折疊基板,其中作為該基板厚度之一百分比的該第四壓縮深度與作為該中心厚度之一百分比的該第二中心壓縮深度之間的一絕對差為約1%或更小。Embodiment 44. The foldable substrate of any one of Embodiments 40-43, wherein the fourth depth of compression as a percentage of the thickness of the substrate and the second depth of compression as a percentage of the center thickness An absolute difference between is about 1% or less.

實施例45.如實施例33至44中任一項所述之可折疊基板,其中該基板厚度在自約125微米至約200微米之一範圍中。Embodiment 45. The foldable substrate of any one of Embodiments 33-44, wherein the substrate thickness is in a range from about 125 microns to about 200 microns.

實施例46.如實施例33至45中任一項所述之可折疊基板,其中該中心厚度在自約25微米至約60微米之一範圍中。Embodiment 46. The foldable substrate of any one of Embodiments 33-45, wherein the center thickness is in a range from about 25 microns to about 60 microns.

實施例47.如實施例33至46中任一項所述之可折疊基板,其中該可折疊基板包含一基於玻璃之基板。Embodiment 47. The foldable substrate of any one of Embodiments 33-46, wherein the foldable substrate comprises a glass-based substrate.

實施例48.如實施例33至46中任一項所述之可折疊基板,其中該可折疊基板包含一基於陶瓷之基板。Embodiment 48. The foldable substrate of any one of Embodiments 33-46, wherein the foldable substrate comprises a ceramic-based substrate.

實施例49.如實施例33至48中任一項所述之可折疊基板,其中該第二中心表面區自該第二主表面凹進一第二距離。Embodiment 49. The foldable substrate of any one of Embodiments 33-48, wherein the second central surface region is recessed a second distance from the second major surface.

實施例50.如實施例49所述之可折疊基板,其中該第二距離為自該基板厚度之約5%至約20%。Embodiment 50. The foldable substrate of Embodiment 49, wherein the second distance is from about 5% to about 20% of the thickness of the substrate.

實施例51.如實施例49至50中任一項所述之可折疊基板,其中該第一距離實質上等於該第二距離。Embodiment 51. The foldable substrate of any one of Embodiments 49-50, wherein the first distance is substantially equal to the second distance.

實施例52.如實施例49至51中任一項所述之可折疊基板,其中該第二主表面包含該第二中心表面區。Embodiment 52. The foldable substrate of any one of Embodiments 49-51, wherein the second major surface includes the second central surface region.

實施例53.如實施例22至52中任一項所述之可折疊基板,其中該第一壓縮應力區域包含約700兆帕斯卡或更大之一第一最大壓縮應力。該第二壓縮應力區域包含一第二最大壓縮應力。該第三壓縮應力區域包含約700兆帕斯卡或更大之一第三最大壓縮應力。該第四壓縮應力區域包含一第四最大壓縮應力。該第一中心壓縮應力區域包含約700兆帕斯卡或更大之一第一中心最大壓縮應力。該第二中心壓縮應力區域包含一第二中心最大壓縮應力。Embodiment 53. The foldable substrate of any one of Embodiments 22-52, wherein the first region of compressive stress comprises a first maximum compressive stress of about 700 megapascals or greater. The second region of compressive stress includes a second maximum compressive stress. The third region of compressive stress contains a third maximum compressive stress of about 700 megapascals or greater. The fourth region of compressive stress includes a fourth maximum compressive stress. The first central compressive stress region contains a first central maximum compressive stress of about 700 megapascals or greater. The second central compressive stress region includes a second central maximum compressive stress.

實施例54.如實施例53所述之可折疊基板,其中該第二最大壓縮應力為約700兆帕斯卡或更大。該第四最大壓縮應力為約700兆帕斯卡或更大。該第二中心最大壓縮應力為約700兆帕斯卡或更大。Embodiment 54. The foldable substrate of Embodiment 53, wherein the second maximum compressive stress is about 700 megapascals or greater. The fourth maximum compressive stress is about 700 megapascals or more. The second central maximum compressive stress is about 700 megapascals or more.

實施例55.如實施例22至53中任一項所述之可折疊基板,進一步包含定位於該第一壓縮應力區域與該第二壓縮應力區域之間的該第一部分之一第一拉伸應力區域。該第一拉伸應力區域包含一第一最大拉伸應力。該可折疊基板包含定位於該第三壓縮應力區域與該第四壓縮應力區域之間的該第二部分之一第二拉伸應力區域。該第二拉伸應力區域包含一第二最大拉伸應力。該可折疊基板包含定位於該第一中心壓縮應力區域與一第二中心壓縮應力區域之間的該中心部分之一中心拉伸應力區域。該中心拉伸應力區域包含一中心最大拉伸應力。該中心最大拉伸應力與該第一最大拉伸應力之間的一絕對差為約10兆帕斯卡或更小。Embodiment 55. The foldable substrate of any one of Embodiments 22-53, further comprising a first stretch of a first portion of the first portion positioned between the first region of compressive stress and the second region of compressive stress stress area. The first tensile stress region includes a first maximum tensile stress. The foldable substrate includes a second tensile stress region of the second portion positioned between the third compressive stress region and the fourth compressive stress region. The second tensile stress region includes a second maximum tensile stress. The foldable substrate includes a central tensile stress region of the central portion positioned between the first central compressive stress region and a second central compressive stress region. The central tensile stress region contains a central maximum tensile stress. An absolute difference between the central maximum tensile stress and the first maximum tensile stress is about 10 megapascals or less.

實施例56.如實施例55所述之可折疊基板,其中該中心最大拉伸應力與該第二最大拉伸應力之間的一絕對差為約10兆帕斯卡或更小。Embodiment 56. The foldable substrate of Embodiment 55, wherein an absolute difference between the central maximum tensile stress and the second maximum tensile stress is about 10 megapascals or less.

實施例57.如實施例55至56中任一項所述之可折疊基板,其中該第一最大拉伸應力實質上等於該第二最大拉伸應力。Embodiment 57. The foldable substrate of any one of Embodiments 55-56, wherein the first maximum tensile stress is substantially equal to the second maximum tensile stress.

實施例58.如實施例22至57中任一項所述之可折疊基板,其中該中心部分進一步包含定位於該第一中心表面區之一部分與該第二中心表面區之一部分之間的該中心部分之一中心拉伸應力區域。該中心拉伸應力區域包含一中心最大拉伸應力。該中心部分包含將該第一中心主表面附接至該第一部分之一第一過渡部分。該第一過渡部分包含一第一過渡拉伸應力區域,該第一過渡拉伸應力區域包含一第一過渡最大拉伸應力。該中心部分包含將該第一中心主表面附接至該第二部分之一第二過渡部分。該第二過渡部分包含一第二過渡拉伸應力區域,該第二過渡拉伸應力區域包含一第二過渡最大拉伸應力。該第一過渡最大拉伸應力大於該中心最大拉伸應力。Embodiment 58. The foldable substrate of any one of Embodiments 22-57, wherein the central portion further comprises the center portion positioned between a portion of the first central surface area and a portion of the second central surface area A central tensile stress region in one of the central sections. The central tensile stress region contains a central maximum tensile stress. The central portion includes a first transition portion attaching the first central major surface to the first portion. The first transition portion includes a first transition tensile stress region, and the first transition tensile stress region includes a first transition maximum tensile stress. The central portion includes a second transition portion attaching the first central major surface to the second portion. The second transition portion includes a second transition tensile stress region, the second transition tensile stress region includes a second transition maximum tensile stress. The first transition maximum tensile stress is greater than the central maximum tensile stress.

實施例59.如實施例58所述之可折疊基板,其中該第二過渡最大拉伸應力大於該中心最大拉伸應力。Embodiment 59. The foldable substrate of Embodiment 58, wherein the second transition maximum tensile stress is greater than the central maximum tensile stress.

實施例60.如實施例58至59中任一項所述之可折疊基板,進一步包含定位於該第一壓縮應力區域與該第二壓縮應力區域之間的該第一部分之一第一拉伸應力區域。該第一拉伸應力區域包含一第一最大拉伸應力。該第一過渡最大拉伸應力大於該第一最大拉伸應力。Embodiment 60. The foldable substrate of any one of Embodiments 58-59, further comprising a first stretch of a first portion of the first portion positioned between the first region of compressive stress and the second region of compressive stress stress area. The first tensile stress region includes a first maximum tensile stress. The first transition maximum tensile stress is greater than the first maximum tensile stress.

實施例61.如實施例58至60中任一項所述之可折疊基板,進一步包含定位於該第三壓縮應力區域與該第四壓縮應力區域之間的該第二部分之一第二拉伸應力區域。該可折疊基板包含該第二拉伸應力區域,該第二拉伸應力區域包含一第二最大拉伸應力。該第二過渡最大拉伸應力大於該第二最大拉伸應力。Embodiment 61. The foldable substrate of any one of Embodiments 58-60, further comprising a second tensile force of the second portion positioned between the third region of compressive stress and the fourth region of compressive stress tensile stress region. The foldable substrate includes the second tensile stress region including a second maximum tensile stress. The second transition maximum tensile stress is greater than the second maximum tensile stress.

實施例62.如實施例1至61中任一項所述之可折疊基板,其中該第一距離為該基板厚度之約20%至約45%。Embodiment 62. The foldable substrate of any one of Embodiments 1-61, wherein the first distance is from about 20% to about 45% of the thickness of the substrate.

實施例63.如實施例1至62中任一項所述之可折疊基板,其中該基板厚度比該中心厚度之約4倍大至少71微米。Embodiment 63. The foldable substrate of any one of Embodiments 1-62, wherein the substrate thickness is at least 71 microns greater than about 4 times the center thickness.

實施例64.如實施例1至63中任一項所述之可折疊基板,其中該基板達成5毫米之一有效彎曲半徑。Embodiment 64. The foldable substrate of any one of Embodiments 1-63, wherein the substrate achieves an effective bend radius of 5 millimeters.

實施例65.一種可折疊設備,其包含如實施例1至64中任一項所述之可折疊基板。該可折疊設備包含一黏著劑,其包含一第一接觸表面及與該第一接觸表面相對之一第二接觸表面。該黏著劑之至少一部分定位於界定於該第二中心表面區與由該第二主表面界定之一第二平面之間的一凹座中。Embodiment 65. A foldable device comprising the foldable substrate of any one of Embodiments 1-64. The foldable device includes an adhesive including a first contact surface and a second contact surface opposite the first contact surface. At least a portion of the adhesive is positioned in a pocket defined between the second central surface region and a second plane defined by the second major surface.

實施例66.一種可折疊設備包含如實施例1至64中任一項所述之可折疊基板。該可折疊設備包含一基於聚合物之部分,其定位於界定於該第二中心表面區與由該第二主表面界定之一第二平面之間的一凹座中。該可折疊設備包含一黏著劑,其包含一第一接觸表面及與該第一接觸表面相對之一第二接觸表面。Embodiment 66. A foldable device comprising the foldable substrate of any one of Embodiments 1-64. The foldable device includes a polymer-based portion positioned in a recess defined between the second central surface region and a second plane defined by the second major surface. The foldable device includes an adhesive including a first contact surface and a second contact surface opposite the first contact surface.

實施例67.如實施例66所述之可折疊設備,其中該基於聚合物之部分包含在自約5%至約10%之一範圍中的一屈服應變。Embodiment 67. The foldable device of Embodiment 66, wherein the polymer-based portion comprises a strain at yield in a range from about 5% to about 10%.

實施例68.如實施例66至67中任一項所述之可折疊設備,其中該可折疊基板之一折射率與該基於聚合物之部分之一折射率之間的一差之一量值為約0.1或更小。Embodiment 68. The foldable device of any one of Embodiments 66-67, wherein a magnitude of a difference between an index of refraction of the foldable substrate and an index of refraction of the polymer-based portion is about 0.1 or less.

實施例69.如實施例65至68中任一項所述之可折疊設備,其中該基板之一折射率與該黏著劑之一折射率之間的一差之一量值為約0.1或更小。Embodiment 69. The foldable device of any one of embodiments 65-68, wherein a magnitude of a difference between a refractive index of the substrate and a refractive index of the adhesive is about 0.1 or more Small.

實施例70.如實施例65至69中任一項所述之可折疊設備,進一步包含附著至該黏著劑之該第二接觸表面的一顯示裝置。Embodiment 70. The foldable device of any one of Embodiments 65-69, further comprising a display device attached to the second contact surface of the adhesive.

實施例71.一種消費型電子產品包含一外殼,其包含一前表面、一後表面及側表面。該消費型電子產品包含至少部分在該外殼內之電組件。該等電組件包含一控制器、一記憶體及一顯示器。該顯示器處於或鄰近該外殼之該前表面。該消費型電子產品包含安置於該顯示器上之一蓋基板。該外殼之一部分或該蓋基板中之至少一者包含如實施例1至64中任一項所述之可折疊基板。Embodiment 71. A consumer electronic product comprising a housing comprising a front surface, a rear surface and side surfaces. The consumer electronic product includes electrical components at least partially within the housing. The electrical components include a controller, a memory and a display. The display is at or adjacent to the front surface of the housing. The consumer electronic product includes a cover substrate disposed on the display. At least one of a portion of the housing or the cover substrate includes the foldable substrate of any one of Embodiments 1-64.

實施例72.一種製作一可折疊基板之方法,該可折疊基板包含定位於一第一外層與一第二外層之間且接觸該第一外層及該第二外層之一核心層。一基板厚度界定於一第一主表面與一第二主表面之間。該第一外層界定該第一主表面,且該第二外層界定與該第一主表面相對之該第二主表面。該方法包含蝕刻該第一主表面之一部分以形成該核心層之一第一中心表面區。該方法包含蝕刻該第二主表面之一部分以形成該核心層之一第二中心表面區。一中心部分包含界定於該第一中心表面區與該第二中心表面區之間的一中心厚度。在該中心部分中的該核心層之該第一中心表面區定位於該第一外層之一第一部分與該第一外層之一第二部分之間。在該中心部分中的該核心層之該第二中心表面區定位於該第二外層之一第三部分與該第二外層之一第四部分之間。Embodiment 72. A method of making a foldable substrate comprising a core layer positioned between a first outer layer and a second outer layer and in contact with the first outer layer and the second outer layer. A substrate thickness is defined between a first major surface and a second major surface. The first outer layer defines the first major surface, and the second outer layer defines the second major surface opposite the first major surface. The method includes etching a portion of the first major surface to form a first central surface region of the core layer. The method includes etching a portion of the second major surface to form a second central surface region of the core layer. A central portion includes a central thickness defined between the first central surface region and the second central surface region. The first central surface region of the core layer in the central portion is positioned between a first portion of a first outer layer and a second portion of the first outer layer. The second central surface region of the core layer in the central portion is positioned between a third portion of the second outer layer and a fourth portion of the second outer layer.

實施例73.一種製作一可折疊基板之方法包含拉製形成一核心層。該方法包含拉製形成一第一外層及一第二外層。該方法包含將該第一外層層壓至該核心層之一第三內表面,及將該第二外層層壓至該核心層之一第四內表面。該第一外層界定一第一主表面,且該第二外層界定與該第一主表面相對之一第二主表面。一基板厚度界定於該第一主表面與該第二主表面之間。在該層壓期間,該第一外層包含高於該第一外層之一軟化點的一第一溫度,該第二外層包含高於該第二外層之一軟化點的一第二溫度,該核心層包含高於該核心層之一軟化點的一第三溫度。接著,該方法包含蝕刻該第一主表面之一部分以形成該核心層之一第一中心表面區。該方法包含蝕刻該第二主表面之一部分以形成該核心層之一第二中心表面區。該可折疊基板包含一中心部分,其包含界定於該第一中心表面區與該第二中心表面區之間的一中心厚度。該第一中心表面區定位於該第一外層之一第一部分與該第一外層之一第三部分之間。該第二中心表面區定位於該第二外層之一第二部分與該第二外層之一第四部分之間。Embodiment 73. A method of making a foldable substrate comprising drawing to form a core layer. The method includes drawing to form a first outer layer and a second outer layer. The method includes laminating the first outer layer to a third inner surface of the core layer, and laminating the second outer layer to a fourth inner surface of the core layer. The first outer layer defines a first major surface, and the second outer layer defines a second major surface opposite the first major surface. A substrate thickness is defined between the first major surface and the second major surface. During the lamination, the first outer layer contains a first temperature above a softening point of the first outer layer, the second outer layer contains a second temperature above a softening point of the second outer layer, the core The layer includes a third temperature above a softening point of the core layer. Next, the method includes etching a portion of the first major surface to form a first central surface region of the core layer. The method includes etching a portion of the second major surface to form a second central surface region of the core layer. The foldable substrate includes a central portion that includes a central thickness defined between the first central surface region and the second central surface region. The first central surface region is positioned between a first portion of the first outer layer and a third portion of the first outer layer. The second central surface region is positioned between a second portion of the second outer layer and a fourth portion of the second outer layer.

實施例74.如實施例72至73中任一項所述之方法,其中該第一外層包含以氧化物為基礎的一第一現有平均鉀濃度。該核心層包含以氧化物為基礎的一核心現有平均鉀濃度。該核心現有平均鉀濃度為約百萬分之10,或大於該第一現有平均鉀濃度。Embodiment 74. The method of any one of Embodiments 72-73, wherein the first outer layer comprises a first existing average potassium concentration based on the oxide. The core layer contains a core existing average potassium concentration on an oxide basis. The core existing average potassium concentration is about 10 parts per million, or greater than the first existing average potassium concentration.

實施例75.如實施例74所述之方法,其中該第二外層包含以氧化物為基礎的一第二現有平均鉀濃度,且該核心現有平均鉀濃度為約百萬分之10,或大於該第二現有平均鉀濃度。Embodiment 75. The method of embodiment 74, wherein the second outer layer comprises a second existing average potassium concentration based on the oxide, and the core existing average potassium concentration is about 10 parts per million, or greater than The second existing average potassium concentration.

實施例76.如實施例72至75中任一項所述之方法,其中該第一外層包含以氧化物為基礎的一第一現有平均鋰濃度,該核心層包含以氧化物為基礎的一核心現有平均鋰濃度,且該第一現有平均鋰濃度為約百萬分之10,或大於該核心現有平均鋰濃度。Embodiment 76. The method of any one of Embodiments 72-75, wherein the first outer layer comprises a first existing average lithium concentration based on oxide and the core layer comprises a The core has an existing average lithium concentration, and the first existing average lithium concentration is about 10 parts per million, or greater than the core existing average lithium concentration.

實施例77.如實施例72至76中任一項所述之方法,進一步包含在該蝕刻該第一主表面之該部分及該蝕刻該第二主表面之該部分後化學強化該可折疊基板。Embodiment 77. The method of any one of Embodiments 72-76, further comprising chemically strengthening the foldable substrate after the etching the portion of the first major surface and after the etching the portion of the second major surface .

實施例78.一種製作一可折疊基板之方法,該可折疊基板包含定位於一第一外層與一第二外層之間且接觸該第一外層及該第二外層之一核心層。一基板厚度界定於該第一外層之一第一主表面與該第二外層之一第二主表面之間。該核心層包含一中心部分,其包含界定於一第一中心表面區與一第二中心表面區之間的一中心厚度。在該中心部分中的該核心層之該第一中心表面區定位於該第一外層之一第一部分與該第一外層之一第二部分之間。在該中心部分中的該核心層之該第二中心表面區定位於該第二外層之一第三部分與該第二外層之一第四部分之間。該方法包含化學強化該可折疊基板。Embodiment 78. A method of making a foldable substrate comprising a core layer positioned between a first outer layer and a second outer layer and in contact with the first outer layer and the second outer layer. A substrate thickness is defined between a first major surface of the first outer layer and a second major surface of the second outer layer. The core layer includes a central portion that includes a central thickness defined between a first central surface region and a second central surface region. The first central surface region of the core layer in the central portion is positioned between a first portion of a first outer layer and a second portion of the first outer layer. The second central surface region of the core layer in the central portion is positioned between a third portion of the second outer layer and a fourth portion of the second outer layer. The method includes chemically strengthening the foldable substrate.

實施例79.如實施例77至78中任一項所述之方法,其中,在該化學強化前,該第一外層包含一或多種鹼金屬離子之一第一擴散率。該核心層包含一或多種鹼金屬離子之一核心擴散率,且該第一擴散率大於該核心擴散率。Embodiment 79. The method of any one of Embodiments 77-78, wherein, prior to the chemical strengthening, the first outer layer comprises a first diffusivity of one or more alkali metal ions. The core layer includes a core diffusivity of one or more alkali metal ions, and the first diffusivity is greater than the core diffusivity.

實施例80.如實施例79所述之方法,其中一第一比率包含該第一擴散率之一平方根除以界定於該第一外層之該第一主表面與一第一內表面之間的一第一厚度。一核心比率包含該核心擴散率之一平方根除以該中心厚度,且該第一比率與該核心比率之間的一絕對差為約0.01 s-0.5 或更小。Embodiment 80. The method of Embodiment 79, wherein a first ratio comprises the square root of the first diffusivity divided by the difference defined between the first major surface and a first inner surface of the first outer layer a first thickness. A core ratio comprises the square root of the core diffusivity divided by the center thickness, and an absolute difference between the first ratio and the core ratio is about 0.01 s -0.5 or less.

實施例81.如實施例80所述之方法,其中一第二比率包含該第二外層之一或多種鹼金屬離子之一第二擴散率之一平方根除以界定於該第二部分之該第二主表面與一第二內表面之間的一第二厚度。該第二比率與該核心比率之間的一絕對差為約0.01 s-0.5 或更小。Embodiment 81. The method of Embodiment 80, wherein a second ratio comprises the square root of a second diffusivity of one or more alkali metal ions of the second outer layer divided by the first A second thickness between the two main surfaces and a second inner surface. An absolute difference between the second ratio and the core ratio is about 0.01 s - 0.5 or less.

實施例82.如實施例77至81中任一項所述之方法,其中,在該化學強化後,該第一外層包含以氧化物為基礎的一第一平均鉀濃度。該第二外層包含以氧化物為基礎的一第二平均鉀濃度。定位於該第一中心表面區與該第二中心表面區之間的該中心部分包含以氧化物為基礎的一中心平均鉀濃度。該第一平均鉀濃度與該中心平均鉀濃度之間的一絕對差為約百萬分之100或更小。Embodiment 82. The method of any one of Embodiments 77-81, wherein, after the chemical strengthening, the first outer layer comprises a first average potassium concentration based on the oxide. The second outer layer contains a second average potassium concentration based on the oxide. The central portion positioned between the first central surface region and the second central surface region contains a central average potassium concentration on an oxide basis. An absolute difference between the first average potassium concentration and the central average potassium concentration is about 100 parts per million or less.

實施例83.如實施例77至82中任一項所述之方法,其中該化學強化包含形成一第一壓縮應力區域,該第一壓縮應力區域自在該第一主表面處的該第一外層之該第一部分延伸至一第一壓縮深度。該方法包含形成一第二壓縮應力區域,該第二壓縮應力區域自在該第二主表面處的該第二外層之該第三部分延伸至一第二壓縮深度。該方法包含形成一第三壓縮應力區域,該第三壓縮應力區域自在該第一主表面處的該第一外層之該第二部分延伸至一第三壓縮深度。該方法包含形成一第四壓縮應力區域,該第四壓縮應力區域自在該第二主表面處的該第二外層之該第四部分延伸至一第四壓縮深度。該方法包含形成自該第一中心表面區延伸至一第一中心壓縮深度之一第一中心壓縮應力區域。該方法包含形成延伸至自該第二中心表面區延伸之一第二中心壓縮深度之一第二中心壓縮應力區域。Embodiment 83. The method of any one of Embodiments 77-82, wherein the chemical strengthening comprises forming a first region of compressive stress from the first outer layer at the first major surface The first portion extends to a first compression depth. The method includes forming a second region of compressive stress extending from the third portion of the second outer layer at the second major surface to a second depth of compression. The method includes forming a third region of compressive stress extending from the second portion of the first outer layer at the first major surface to a third depth of compression. The method includes forming a fourth region of compressive stress extending from the fourth portion of the second outer layer at the second major surface to a fourth depth of compression. The method includes forming a first central compressive stress region extending from the first central surface region to a first central compressive depth. The method includes forming a second central compressive stress region extending to a second central compressive depth extending from the second central surface region.

實施例84.如實施例83所述之方法,其中作為該基板厚度之一百分比的該第一壓縮深度與作為該中心厚度之一百分比的該第一中心壓縮深度之間的一絕對差為約1%或更小。Embodiment 84. The method of Embodiment 83, wherein an absolute difference between the first compression depth as a percentage of the substrate thickness and the first central compression depth as a percentage of the center thickness is about 1% or less.

實施例85.如實施例83至84中任一項所述之方法,其中作為該基板厚度之一百分比的該第三壓縮深度與作為該中心厚度之一百分比的該第一中心壓縮深度之間的一絕對差為約1%或更小。Embodiment 85. The method of any one of Embodiments 83-84, wherein the third depth of compression as a percentage of the substrate thickness is between the first depth of compression as a percentage of the center thickness An absolute difference of about 1% or less.

實施例86.如實施例83至85中任一項所述之方法,其中作為該基板厚度之一百分比的該第二壓縮深度與作為該中心厚度之一百分比的該第二中心壓縮深度之間的一絕對差為約1%或更小。Embodiment 86. The method of any one of Embodiments 83-85, wherein the second depth of compression as a percentage of the substrate thickness is between the second depth of compression as a percentage of the center thickness An absolute difference of about 1% or less.

實施例87.如實施例83至86中任一項所述之方法,其中作為該基板厚度之一百分比的該第四壓縮深度與作為該中心厚度之一百分比的該第二中心壓縮深度之間的一絕對差為約1%或更小。Embodiment 87. The method of any one of Embodiments 83-86, wherein the fourth depth of compression as a percentage of the substrate thickness is between the second depth of compression as a percentage of the center thickness An absolute difference of about 1% or less.

實施例88.如實施例83至87中任一項所述之方法,其中該第一部分包含與該第一壓縮深度相關聯的一或多種鹼金屬離子之一第一層深度。該第三部分包含與該第二壓縮深度相關聯的一或多種鹼金屬離子之一第二層深度。該第二部分包含與該第三壓縮深度相關聯的一或多種鹼金屬離子之一第三層深度。該第四部分包含與該第四壓縮深度相關聯的一或多種鹼金屬離子之一第四層深度。該中心部分包含與該第一中心壓縮深度相關聯的一或多種鹼金屬離子之一第一中心層深度。該中心部分包含與該第二中心壓縮深度相關聯的一或多種鹼金屬離子之一第二中心層深度。作為該基板厚度之一百分比的該第一層深度與作為該中心厚度之一百分比的該第一中心層深度之間的一絕對差為約0.5%或更小。Embodiment 88. The method of any one of Embodiments 83-87, wherein the first portion comprises a first layer depth of one or more alkali metal ions associated with the first compression depth. The third portion includes a second layer depth of one or more alkali metal ions associated with the second compression depth. The second portion includes a third layer depth of one or more alkali metal ions associated with the third compression depth. The fourth portion includes a fourth layer depth of one or more alkali metal ions associated with the fourth compression depth. The central portion includes a first central layer depth of one or more alkali metal ions associated with the first central compression depth. The central portion includes a second central layer depth of one or more alkali metal ions associated with the second central compression depth. An absolute difference between the first layer depth as a percentage of the substrate thickness and the first center layer depth as a percentage of the center thickness is about 0.5% or less.

實施例89.如實施例88所述之方法,其中作為該基板厚度之一百分比的該第三層深度與作為該中心厚度之一百分比的該第一中心層深度之間的一絕對差為約0.5%或更小。Embodiment 89. The method of Embodiment 88, wherein an absolute difference between the depth of the third layer as a percentage of the substrate thickness and the depth of the first center layer as a percentage of the center thickness is about 0.5% or less.

實施例90.如實施例88至89中任一項所述之方法,其中作為該基板厚度之一百分比的該第二層深度與作為該中心厚度之一百分比的該第二中心層深度之間的一絕對差為約0.5%或更小。Embodiment 90. The method of any one of Embodiments 88-89, wherein the second layer depth as a percentage of the substrate thickness is between the second center layer depth as a percentage of the center thickness An absolute difference of about 0.5% or less.

實施例91.如實施例88至89中任一項所述之方法,其中作為該基板厚度之一百分比的該第四層深度與作為該中心厚度之一百分比的該第二中心層深度之間的一絕對差為約0.5%或更小。Embodiment 91. The method of any one of Embodiments 88-89, wherein the fourth layer depth as a percentage of the substrate thickness is between the second center layer depth as a percentage of the center thickness An absolute difference of about 0.5% or less.

實施例92.如實施例72至91中任一項所述之方法,其中該核心層包含大於該第一外層之一第一熱膨脹係數的一核心熱膨脹係數。該核心熱膨脹係數大於該第二外層之一第二熱膨脹係數。Embodiment 92. The method of any one of Embodiments 72-91, wherein the core layer comprises a core thermal expansion coefficient that is greater than a first thermal expansion coefficient of the first outer layer. The core thermal expansion coefficient is greater than a second thermal expansion coefficient of the second outer layer.

實施例93.如實施例72至92中任一項所述之方法,其中該核心層之一核心密度大於該第一外層之一第一密度。該核心密度大於該第二外層之一第二密度。Embodiment 93. The method of any one of Embodiments 72-92, wherein a core density of the core layer is greater than a first density of the first outer layer. The core density is greater than a second density of the second outer layer.

實施例94.如實施例72至93中任一項所述之方法,其中該核心層之一核心網路擴張係數小於該第一外層之一第一網路擴張係數。該核心網路擴張係數小於該第二外層之一第二網路擴張係數。Embodiment 94. The method of any one of Embodiments 72-93, wherein a core network expansion factor of the core layer is less than a first network expansion factor of the first outer layer. The core network expansion factor is smaller than a second network expansion factor of the second outer layer.

實施例95.一種製作一可折疊基板之方法,該可折疊基板包含界定於一第一主表面與與該第一主表面相對之一第二主表面之間的一基板厚度。該方法包含在一第一時間週期內化學強化該可折疊基板。接著,該方法包含蝕刻該第一主表面之一部分以形成一第一中心表面區。該方法包含蝕刻該第二主表面之一部分以形成一第二中心表面區。接著該方法進一步包含在一第二時間週期內進一步化學強化該可折疊基板。一中心部分包含界定於該第一中心表面區與該第二中心表面區之間的一中心厚度。該中心部分定位於一第一部分與一第二部分之間。該第一中心表面區自該第一主表面凹進去一第一距離。該第二中心表面區自該第二主表面凹進去一第二距離。在該進一步化學強化後,該可折疊基板包含該第一部分之一第一壓縮應力區域,其自該第一主表面延伸至一第一壓縮深度。該可折疊基板包含該第三部分之一第二壓縮應力區域,其自該第二主表面延伸至一第二壓縮深度。該可折疊基板包含該第二部分之一第三壓縮應力區域,其自該第一主表面延伸至一第三壓縮深度。該可折疊基板包含該第四部分之一第四壓縮應力區域,其自該第二主表面延伸至一第四壓縮深度。該可折疊基板包含該中心部分之一第一中心壓縮應力區域,其自該第一中心表面區延伸至一第一中心壓縮深度。該可折疊基板包含該中心部分之一第二中心壓縮應力區域,其自該第二中心表面區延伸至一第二中心壓縮深度。Embodiment 95. A method of making a foldable substrate comprising a substrate thickness defined between a first major surface and a second major surface opposite the first major surface. The method includes chemically strengthening the foldable substrate for a first period of time. Next, the method includes etching a portion of the first major surface to form a first central surface region. The method includes etching a portion of the second major surface to form a second central surface region. The method then further includes further chemically strengthening the foldable substrate for a second period of time. A central portion includes a central thickness defined between the first central surface region and the second central surface region. The central portion is positioned between a first portion and a second portion. The first central surface region is recessed a first distance from the first major surface. The second central surface region is recessed a second distance from the second major surface. After the further chemical strengthening, the foldable substrate includes a first compressive stress region of the first portion extending from the first major surface to a first compressive depth. The foldable substrate includes a second compressive stress region of the third portion extending from the second major surface to a second compressive depth. The foldable substrate includes a third region of compressive stress in the second portion extending from the first major surface to a third depth of compression. The foldable substrate includes a fourth region of compressive stress of the fourth portion extending from the second major surface to a fourth depth of compression. The foldable substrate includes a first central compressive stress region of the central portion extending from the first central surface region to a first central compressive depth. The foldable substrate includes a second central compressive stress region of the central portion extending from the second central surface region to a second central compressive depth.

實施例96.一種製作一可折疊基板之方法,該可折疊基板包含界定於一第一主表面與與該第一主表面相對之一第二主表面之間的一基板厚度。該方法包含在一第一時間週期內化學強化該可折疊基板。接著,該方法包含蝕刻一現有第一中心表面區以形成一第一中心表面區。該現有第一中心表面區與該第一主表面不共面。該方法包含蝕刻一現有第二中心表面區以形成一第二中心表面區。接著,該方法進一步包含在一第二時間週期內進一步化學強化該可折疊基板。一中心部分包含界定於該第一中心表面區與該第二中心表面區之間的一中心厚度。該中心部分定位於一第一部分與一第二部分之間。該第一中心表面區自該第一主表面凹進去一第一距離。在該進一步化學強化後,該可折疊基板包含該第一部分之一第一壓縮應力區域,其自該第一主表面延伸至一第一壓縮深度。該可折疊基板包含該第三部分之一第二壓縮應力區域,其自該第二主表面延伸至一第二壓縮深度。該可折疊基板包含該第二部分之一第三壓縮應力區域,其自該第一主表面延伸至一第三壓縮深度。該可折疊基板包含該第四部分之一第四壓縮應力區域,其自該第二主表面延伸至一第四壓縮深度。該可折疊基板包含該中心部分之一第一中心壓縮應力區域,其自該第一中心表面區延伸至一第一中心壓縮深度。該可折疊基板包含該中心部分之一第二中心壓縮應力區域,其自該第二中心表面區延伸至一第二中心壓縮深度。Embodiment 96. A method of making a foldable substrate comprising a substrate thickness defined between a first major surface and a second major surface opposite the first major surface. The method includes chemically strengthening the foldable substrate for a first period of time. Next, the method includes etching an existing first central surface region to form a first central surface region. The existing first central surface region is not coplanar with the first major surface. The method includes etching an existing second central surface region to form a second central surface region. Next, the method further includes further chemically strengthening the foldable substrate for a second period of time. A central portion includes a central thickness defined between the first central surface region and the second central surface region. The central portion is positioned between a first portion and a second portion. The first central surface region is recessed a first distance from the first major surface. After the further chemical strengthening, the foldable substrate includes a first compressive stress region of the first portion extending from the first major surface to a first compressive depth. The foldable substrate includes a second compressive stress region of the third portion extending from the second major surface to a second compressive depth. The foldable substrate includes a third region of compressive stress in the second portion extending from the first major surface to a third depth of compression. The foldable substrate includes a fourth region of compressive stress of the fourth portion extending from the second major surface to a fourth depth of compression. The foldable substrate includes a first central compressive stress region of the central portion extending from the first central surface region to a first central compressive depth. The foldable substrate includes a second central compressive stress region of the central portion extending from the second central surface region to a second central compressive depth.

實施例97.如實施例96所述之方法,其中在該蝕刻該第一中心表面區前,該現有第一中心表面區自該第一主表面凹進去一第一現有距離,該第一現有距離範圍自該基板厚度之約10%至約75%。Embodiment 97. The method of Embodiment 96, wherein prior to the etching the first central surface region, the existing first central surface region is recessed from the first major surface a first existing distance, the first existing The distance ranges from about 10% to about 75% of the thickness of the substrate.

實施例98.如實施例96至97中任一項所述之方法,其中在該蝕刻該現有第二中心表面區前,該現有第二中心表面區實質上與該第二主表面共面。Embodiment 98. The method of any one of Embodiments 96-97, wherein prior to the etching of the existing second central surface region, the existing second central surface region is substantially coplanar with the second major surface.

實施例99.如實施例96至97中任一項所述之方法,其中在該蝕刻該現有第二中心表面區前,該現有第二中心表面區自該第二主表面凹進去範圍自約1%至約50%之一第二現有距離。Embodiment 99. The method of any one of Embodiments 96-97, wherein prior to the etching the existing second central surface region, the existing second central surface region is recessed from the second major surface by an extent of approximately 1% to about 50% of a second existing distance.

實施例100.如實施例96至99中任一項所述之方法,其中該第二中心表面區自該第二主表面凹進一第二距離。Embodiment 100. The method of any of Embodiments 96-99, wherein the second central surface region is recessed a second distance from the second major surface.

實施例101.如實施例97至98中任一項所述之方法,其中在該蝕刻該現有第二中心表面區前,該現有第二中心表面區自該第二主表面突出。Embodiment 101. The method of any of Embodiments 97-98, wherein prior to the etching the existing second central surface region, the existing second central surface region protrudes from the second major surface.

實施例102.如實施例101所述之方法,其中在該蝕刻該現有第二中心表面區後,該第二中心表面區實質上與該第二主表面共面。Embodiment 102. The method of Embodiment 101, wherein after the etching the existing second central surface region, the second central surface region is substantially coplanar with the second major surface.

實施例103.如實施例95或實施例100所述之方法,其中該第一距離實質上等於該第二距離。Embodiment 103. The method of embodiment 95 or embodiment 100, wherein the first distance is substantially equal to the second distance.

實施例104.如實施例95或實施例100所述之方法,其中該第二距離為自該基板厚度之約5%至約20%。Embodiment 104. The method of embodiment 95 or embodiment 100, wherein the second distance is from about 5% to about 20% of the thickness of the substrate.

實施例105.如實施例95至104中任一項所述之方法,其中該第一距離為該基板厚度之約20%至約45%。Embodiment 105. The method of any one of Embodiments 95-104, wherein the first distance is from about 20% to about 45% of the thickness of the substrate.

實施例106.如實施例95至105中任一項所述之方法,其中該第二時間週期對該第一時間週期之一比率之一平方根在該中心厚度與該基板厚度與該中心厚度之間的該差相除之10%內。Embodiment 106. The method of any one of Embodiments 95-105, wherein a square root of a ratio of a ratio of the second time period to the first time period is the difference between the center thickness and the substrate thickness and the center thickness. Divide the difference by 10%.

實施例107.如實施例106所述之方法,其中該第二時間週期對該第一時間週期之該比率之該平方根實質上等於該中心厚度除以該基板厚度與該中心厚度之間的該差。Embodiment 107. The method of Embodiment 106, wherein the square root of the ratio of the second time period to the first time period is substantially equal to the center thickness divided by the ratio between the substrate thickness and the center thickness Difference.

實施例108.如實施例95至107中任一項所述之方法,其中該第二時間週期為自該第一時間週期之約2%至約50%。Embodiment 108. The method of any one of Embodiments 95-107, wherein the second time period is from about 2% to about 50% of the first time period.

實施例109.如實施例95至108中任一項所述之方法,其中,在該化學強化後,但在該進一步化學強化前,該第一部分包含延伸至一第一中間壓縮深度之一第一中間壓縮應力區域。該第一中間壓縮深度與該基板厚度相除在自約10%至約20%之一範圍中。Embodiment 109. The method of any one of Embodiments 95-108, wherein, after the chemical strengthening, but before the further chemical strengthening, the first portion comprises a first portion extending to a first intermediate compression depth An intermediate compressive stress region. The first intermediate compression depth is divided by the substrate thickness in a range from about 10% to about 20%.

實施例110.如實施例95至108中任一項所述之方法,其中,在該化學強化後,但在該進一步化學強化前,該第一部分包含一第一中間壓縮應力區域及在該化學強化期間引入的一或多種鹼金屬離子之距該第一主表面的一第一中間層深度。該第一中間層深度與該基板厚度相除在自約10%至約20%之一範圍中。Embodiment 110. The method of any one of Embodiments 95-108, wherein after the chemical strengthening, but before the further chemical strengthening, the first portion comprises a first intermediate compressive stress region and A first interlayer depth from the first major surface of one or more alkali metal ions introduced during strengthening. The first interlayer depth divided by the substrate thickness is in a range from about 10% to about 20%.

實施例111.如實施例95至110中任一項所述之方法,其中,在該進一步化學強化該可折疊基板後,該第一部分包含在該化學強化及/或該進一步化學強化期間引入至該第一部分的一或多種鹼金屬離子之距該第一主表面的一第一層深度。該中心部分包含在該進一步化學強化期間引入至該中心部分的一或多種鹼金屬離子之距該第一中心表面區的一第一中心層深度。作為該基板厚度之一百分比的該第一層深度與作為該中心厚度之一百分比的該第一中心層深度之間的一絕對差為約0.5%或更小。Embodiment 111. The method of any one of Embodiments 95-110, wherein, after the further chemically strengthening the foldable substrate, the first portion is included during the chemical strengthening and/or the further chemical strengthening The first portion of the one or more alkali metal ions is at a first layer depth from the first major surface. The central portion comprises a first central layer depth from the first central surface region of one or more alkali metal ions introduced into the central portion during the further chemical strengthening. An absolute difference between the first layer depth as a percentage of the substrate thickness and the first center layer depth as a percentage of the center thickness is about 0.5% or less.

實施例112.如實施例111所述之方法,其中,在該進一步化學強化該可折疊基板後,該可折疊基板進一步包含在該化學強化及/或該進一步化學強化期間引入至該第二部分的一或多種鹼金屬離子之距該第一主表面的一第三層深度。作為該基板厚度之一百分比的該第三層深度與作為該中心厚度之一百分比的該第一中心層深度之間的一絕對差為約0.5%或更小。Embodiment 112. The method of Embodiment 111, wherein, after the further chemically strengthening the foldable substrate, the foldable substrate further comprises introducing into the second portion during the chemical strengthening and/or the further chemical strengthening The one or more alkali metal ions are a third depth from the first major surface. An absolute difference between the third layer depth as a percentage of the substrate thickness and the first center layer depth as a percentage of the center thickness is about 0.5% or less.

實施例113.如實施例111至112中任一項所述之方法,其中該一或多種鹼金屬離子包含鉀離子。Embodiment 113. The method of any one of Embodiments 111-112, wherein the one or more alkali metal ions comprise potassium ions.

實施例114.如實施例95至113中任一項所述之方法,其中,在該進一步化學強化該可折疊基板後,該第一部分包含以氧化物為基礎的一第一平均鉀濃度。該中心部分包含以氧化物為基礎的一中心平均鉀濃度。該第一平均鉀濃度與該中心平均鉀濃度之間的一絕對差為約百萬分之100或更小。Embodiment 114. The method of any one of Embodiments 95-113, wherein after the further chemically strengthening the foldable substrate, the first portion comprises a first average potassium concentration based on the oxide. The central portion contains a central average potassium concentration on an oxide basis. An absolute difference between the first average potassium concentration and the central average potassium concentration is about 100 parts per million or less.

實施例115.如實施例114所述之方法,其中,在該進一步化學強化該可折疊基板後,該第二部分包含以氧化物為基礎的一第二平均鉀濃度。該第二平均鉀濃度與該中心平均鉀濃度之間的一絕對差為約百萬分之100或更小。Embodiment 115. The method of Embodiment 114, wherein after the further chemically strengthening the foldable substrate, the second portion comprises a second average potassium concentration based on the oxide. An absolute difference between the second average potassium concentration and the central average potassium concentration is about 100 parts per million or less.

實施例116.如實施例95至115中任一項所述之方法,其中,在該進一步化學強化該可折疊基板後,作為該基板厚度之一百分比的該第一壓縮深度與作為該中心厚度之一百分比的該第一中心壓縮深度之間的一絕對差為約1%或更小。Embodiment 116. The method of any one of Embodiments 95-115, wherein after the further chemically strengthening the foldable substrate, the first compression depth as a percentage of the substrate thickness and as the center thickness An absolute difference between the first central compression depths of a percentage is about 1% or less.

實施例117.如實施例116所述之方法,其中,在該進一步化學強化該可折疊基板後。作為該基板厚度之一百分比的該第三壓縮深度與作為該中心厚度之一百分比的該第一中心壓縮深度之間的一絕對差為約1%或更小。Embodiment 117. The method of Embodiment 116, wherein after the further chemically strengthening the foldable substrate. An absolute difference between the third compression depth as a percentage of the substrate thickness and the first central compression depth as a percentage of the center thickness is about 1% or less.

實施例118.如實施例95至117中任一項所述之方法,其中在該化學強化後,該可折疊基板進一步包含定位於該第一壓縮應力區域與該第二壓縮應力區域之間的該第一部分之一第一拉伸應力區域。該第一拉伸應力區域包含一第一最大拉伸應力。該可折疊基板進一步包含定位於該第三壓縮應力區域與該第四壓縮應力區域之間的該第二部分之一第二拉伸應力區域。該第二拉伸應力區域包含一第二最大拉伸應力。該可折疊基板進一步包含定位於該第一中心壓縮應力區域與一第二中心壓縮應力區域之間的該中心部分之一中心拉伸應力區域。該中心拉伸應力區域包含一中心最大拉伸應力。該中心最大拉伸應力與該第一最大拉伸應力之間的一絕對差為約10兆帕斯卡或更小。Embodiment 118. The method of any one of Embodiments 95-117, wherein after the chemical strengthening, the foldable substrate further comprises a A first tensile stress region of one of the first portions. The first tensile stress region includes a first maximum tensile stress. The foldable substrate further includes a second tensile stress region of the second portion positioned between the third compressive stress region and the fourth compressive stress region. The second tensile stress region includes a second maximum tensile stress. The foldable substrate further includes a central tensile stress region of the central portion positioned between the first central compressive stress region and a second central compressive stress region. The central tensile stress region contains a central maximum tensile stress. An absolute difference between the central maximum tensile stress and the first maximum tensile stress is about 10 megapascals or less.

實施例119.如實施例118所述之方法,其中該中心最大拉伸應力與該第二最大拉伸應力之間的一絕對差為約10兆帕斯卡或更小。Embodiment 119. The method of Embodiment 118, wherein an absolute difference between the central maximum tensile stress and the second maximum tensile stress is about 10 megapascals or less.

實施例120.如實施例118至119中任一項所述之方法,其中該第一最大拉伸應力實質上等於該第二最大拉伸應力。Embodiment 120. The method of any of Embodiments 118-119, wherein the first maximum tensile stress is substantially equal to the second maximum tensile stress.

實施例121.如實施例95至120中任一項所述之方法,其中在該化學強化後,該中心部分進一步包含定位於該第一中心表面區之一部分與該第二中心表面區之一部分之間的該中心部分之一中心拉伸應力區域。該中心拉伸應力區域包含一中心最大拉伸應力。該中心部分包含將該第一中心表面區附接至該第一部分之一第一過渡部分。該第一過渡部分包含一第一過渡拉伸應力區域,該第一過渡拉伸應力區域包含一第一過渡最大拉伸應力。該中心部分包含將該第一中心表面區附接至該第二部分之一第二過渡部分。該第二過渡部分包含一第二過渡拉伸應力區域,該第二過渡拉伸應力區域包含一第二過渡最大拉伸應力。該第一過渡最大拉伸應力大於該中心最大拉伸應力。Embodiment 121. The method of any one of Embodiments 95-120, wherein after the chemical strengthening, the central portion further comprises a portion positioned in the first central surface region and a portion of the second central surface region A central tensile stress region between one of the central parts. The central tensile stress region contains a central maximum tensile stress. The central portion includes a first transition portion attaching the first central surface region to the first portion. The first transition portion includes a first transition tensile stress region, and the first transition tensile stress region includes a first transition maximum tensile stress. The central portion includes a second transition portion attaching the first central surface region to the second portion. The second transition portion includes a second transition tensile stress region, the second transition tensile stress region includes a second transition maximum tensile stress. The first transition maximum tensile stress is greater than the central maximum tensile stress.

實施例122.如實施例121所述之方法,其中該第二過渡最大拉伸應力大於該中心最大拉伸應力。Embodiment 122. The method of Embodiment 121, wherein the second transition maximum tensile stress is greater than the central maximum tensile stress.

實施例123.如實施例121至122中任一項所述之方法,其中在該化學強化後,該可折疊基板進一步包含定位於該第一壓縮應力區域與該第二壓縮應力區域之間的該第一部分之一第一拉伸應力區域。該第一拉伸應力區域包含一第一最大拉伸應力。該第一過渡最大拉伸應力大於該第一最大拉伸應力。Embodiment 123. The method of any one of Embodiments 121-122, wherein after the chemical strengthening, the foldable substrate further comprises a A first tensile stress region of one of the first portions. The first tensile stress region includes a first maximum tensile stress. The first transition maximum tensile stress is greater than the first maximum tensile stress.

實施例124.如實施例121至123中任一項所述之方法,其中在該化學強化後,該可折疊基板進一步包含定位於該第三壓縮應力區域與該第四壓縮應力區域之間的該第二部分之一第二拉伸應力區域。該第二拉伸應力區域包含一第二最大拉伸應力。該第二過渡最大拉伸應力大於該第二最大拉伸應力。Embodiment 124. The method of any one of Embodiments 121-123, wherein after the chemical strengthening, the foldable substrate further comprises a A second tensile stress region of the second portion. The second tensile stress region includes a second maximum tensile stress. The second transition maximum tensile stress is greater than the second maximum tensile stress.

實施例125.如實施例78至124中任一項所述之方法,進一步包含在該第一主表面上安置一塗層,該塗層填充界定於該第一中心表面區與由該第一主表面界定之一第一平面之間的一凹座。Embodiment 125. The method of any one of Embodiments 78-124, further comprising disposing a coating on the first major surface, the coating filling defined in the first central surface region and formed by the first The major surface defines a recess between a first plane.

實施例126.如實施例78至125中任一項所述之方法,進一步包含在該可折疊基板之該第二主表面上安置一黏著劑。該黏著劑包含一第一接觸表面及與該第一接觸表面相對之一第二接觸表面。Embodiment 126. The method of any of Embodiments 78-125, further comprising disposing an adhesive on the second major surface of the foldable substrate. The adhesive includes a first contact surface and a second contact surface opposite the first contact surface.

實施例127.如實施例126所述之方法,其中該黏著劑之至少一部分定位於界定於該第二中心表面區與由該第二主表面界定之一第二平面之間的一凹座中。Embodiment 127. The method of Embodiment 126, wherein at least a portion of the adhesive is positioned in a recess defined between the second central surface region and a second plane defined by the second major surface .

實施例128.如實施例126至127中任一項所述之方法,其中該基板之一折射率與該黏著劑之一折射率之間的一差之一量值為約0.1或更小。Embodiment 128. The method of any one of Embodiments 126-127, wherein a magnitude of a difference between an index of refraction of the substrate and an index of refraction of the adhesive is about 0.1 or less.

實施例129.如實施例126至128中任一項所述之方法,進一步包含將一顯示裝置附著至該黏著劑之該第二接觸表面。Embodiment 129. The method of any of Embodiments 126-128, further comprising attaching a display device to the second contact surface of the adhesive.

現將在下文參看展示實例實施例之隨附圖式更充分地描述實施例。在可能時,貫穿圖式使用相同參考數字指代相同或相似部分。然而,申請專利範圍可涵蓋各種實施例之許多不同態樣,且不應被解釋為限於本文中闡述之實施例。Embodiments will now be described more fully hereinafter with reference to the accompanying drawings that illustrate example embodiments. Wherever possible, the same reference numbers will be used throughout the drawings to refer to the same or like parts. However, the claimed scope may encompass many different aspects of various embodiments and should not be construed as limited to the embodiments set forth herein.

第1圖至第9圖及第11圖至第12圖圖示包含根據本揭露內容之實施例的一可折疊基板206、407或807之可折疊設備101、301、401、501、601、701、801及1201及/或測試可折疊設備1102之視圖。除非另有指出,否則一個可折疊設備之實施例之特徵的論述可同等適用於本揭露內容之任何實施例之對應特徵。舉例而言,貫穿本揭露內容之相同零件編號可指示,在一些實施例中,所識別之特徵彼此相同,且除非另有指出,否則一個實施例之識別之特徵的論述可同等適用於本揭露內容之其他實施例中之任一者的識別之特徵。FIGS. 1-9 and 11-12 illustrate foldable devices 101 , 301 , 401 , 501 , 601 , 701 including a foldable substrate 206 , 407 or 807 according to embodiments of the present disclosure , 801 and 1201 and/or views of the test foldable device 1102. Unless otherwise indicated, discussions of features of one embodiment of a foldable device are equally applicable to corresponding features of any embodiment of the present disclosure. For example, the same part numbers throughout this disclosure may indicate that, in some embodiments, the identified features are identical to each other, and unless otherwise indicated, a discussion of the identified features of one embodiment is equally applicable to this disclosure Characteristics of identification of any of the other embodiments of the content.

第2圖至第3圖及第6圖示意性圖示包含在未折疊(例如,平)配置中的根據本揭露內容之實施例的可折疊基板206之可折疊設備101、301及601之實例實施例,而第11圖圖示包含在經折疊配置中的根據本揭露內容之實施例的可折疊基板206之一測試可折疊設備1102之一實例實施例。可折疊基板206包含一層壓件,該層壓件包含定位於一第一外層213與一第二外層215之間的一核心層207。第4圖至第5圖及第7圖示意性圖示包含在未折疊(例如,平)配置中的根據本揭露內容之實施例的可折疊基板407之可折疊設備401、501及701之實例實施例,而第12圖包含一經折疊之可折疊設備1201,其包含在經折疊配置中的根據本揭露內容之實施例的可折疊基板407。第8圖示意性圖示一可折疊設備801,其包含在未折疊(例如,平)配置中的根據本揭露內容之實施例的一可折疊基板807。Figures 2-3 and 6 schematically illustrate foldable devices 101 , 301 and 601 including a foldable substrate 206 according to an embodiment of the present disclosure in an unfolded (eg, flat) configuration Example embodiments, and FIG. 11 illustrates an example embodiment of a test foldable device 1102 including a foldable substrate 206 in accordance with an embodiment of the present disclosure included in a folded configuration. The foldable substrate 206 includes a laminate including a core layer 207 positioned between a first outer layer 213 and a second outer layer 215 . Figures 4-5 and 7 schematically illustrate foldable devices 401 , 501 and 701 including a foldable substrate 407 according to an embodiment of the present disclosure in an unfolded (eg, flat) configuration Example embodiments, and FIG. 12 includes a folded foldable device 1201 including a foldable substrate 407 in accordance with an embodiment of the present disclosure in a folded configuration. Figure 8 schematically illustrates a foldable device 801 including a foldable substrate 807 in accordance with an embodiment of the present disclosure in an unfolded (eg, flat) configuration.

可折疊設備101、301、401、501、601、701、801及1201包含一第一部分221、421或821、一第二部分231、431或831,及定位於第一部分221、421或821與第二部分231、431或831之間的一中心部分281、481或881。在一些實施例中,如在第2圖及第4圖中展示,可折疊設備101或401可包含一離型襯裡271,但在另外實施例中可使用其他基板(例如,貫穿本申請論述的基於玻璃之基板及/或基於陶瓷之基板),而非圖示之離型襯裡271。在一些實施例中,如在第1圖至第5圖及第11圖至第12圖中展示,可折疊設備101、301、401、501及1201或測試可折疊設備1102可包含一塗層251。在一些實施例中,如在第1圖至第5圖及第12圖中展示,可折疊設備101、301、401、501及1201可包含一黏著層261。在一些實施例中,如在第2圖、第5圖及第12圖中展示,可折疊設備101、501及1201可包含一基於聚合物之部分241。在一些實施例中,如在第1圖至第12圖中展示,可折疊基板206、407及807可包含一第一凹座234、434或834。在另外實施例中,如在第1圖至第7圖及第10圖至第12圖中展示,可折疊基板206或407可進一步包含一第二凹座244或444。應理解,本揭露內容之可折疊設備中之任一者可包含一第二基板(例如,一基於玻璃之基板及/或一基於陶瓷之基板)、一離型襯裡271、一顯示裝置307、一塗層251、一黏著層261及/或一基於聚合物之部分241。The foldable devices 101, 301, 401, 501, 601, 701, 801 and 1201 include a first part 221, 421 or 821, a second part 231, 431 or 831, and are positioned between the first part 221, 421 or 821 and the first part 221, 421 or 821. A central portion 281 , 481 or 881 between the two portions 231 , 431 or 831 . In some embodiments, as shown in FIGS. 2 and 4, foldable device 101 or 401 may include a release liner 271, although other substrates may be used in other embodiments (eg, as discussed throughout this application). glass-based substrates and/or ceramic-based substrates) instead of the release liner 271 shown. In some embodiments, as shown in FIGS. 1-5 and 11-12, foldable devices 101 , 301 , 401 , 501 and 1201 or test foldable device 1102 may include a coating 251 . In some embodiments, as shown in FIGS. 1-5 and 12, foldable devices 101 , 301 , 401 , 501 , and 1201 may include an adhesive layer 261 . In some embodiments, as shown in Figures 2, 5, and 12, foldable devices 101, 501, and 1201 may include a polymer-based portion 241. In some embodiments, as shown in FIGS. 1-12 , the foldable substrates 206 , 407 and 807 may include a first recess 234 , 434 or 834 . In other embodiments, as shown in FIGS. 1-7 and 10-12, the foldable substrate 206 or 407 may further include a second recess 244 or 444 . It should be understood that any of the foldable devices of the present disclosure may include a second substrate (eg, a glass-based substrate and/or a ceramic-based substrate), a release liner 271, a display device 307, A coating 251 , an adhesion layer 261 and/or a polymer-based portion 241 .

貫穿本揭露內容,參看第1圖,可折疊設備101、301、401、501、601、701及/或801之寬度103被視為在可折疊設備之折疊軸102之一方向104上在可折疊設備之對置邊緣之間取得的該可折疊設備之尺寸,其中方向104亦包含寬度103之方向。此外,貫穿本揭露內容,可折疊設備101、301、401、501、601、701及/或801之長度105被視為在垂直於可折疊設備101、301、401、501、601、701及/或801之折疊軸102之一方向106上在可折疊設備101、301、401、501、601、701及/或801之對置邊緣之間取得的該可折疊設備101、301、401、501、601、701及/或801之尺寸。在一些實施例中,如在第1圖至第5圖中展示,本揭露內容之任何實施例之可折疊設備可包含包括折疊軸線102之一折疊平面109,及當該可折疊設備在平配置(例如,見第1圖)中時,包含基板厚度211、411或811之一方向。在一些實施例中,平面109可包含該可折疊設備之一中心軸107。在一些實施例中,該可折疊設備可在方向111(例如,見第1圖)上圍繞在寬度103之方向104上延伸的折疊軸線102折疊,以形成一經折疊配置(例如,見第9圖及第11圖至第12圖)。如所展示,該可折疊設備可包括一單一折疊軸以允許該可折疊設備包含一兩折件,其中例如,該可折疊設備可對半折疊。在另外實施例中,該可折疊設備可包括兩個或更多個折疊軸,其中每一折疊軸包括與本文中論述之中心部分281、481或881類似或相同的一對應中心部分。舉例而言,提供兩個折疊軸可允許可折疊設備包含一三折件,其中例如,可折疊該可折疊設備,其中第一部分221、421或821、第二部分231、431或831及第三部分類似於具有中心部分281、481或881及另一中心部分(分別與定位於第一部分與第二部分之間及第二部分與第三部分之間的中心部分類似或相同)之第一部分或第二部分。Throughout this disclosure, referring to Figure 1, the width 103 of the foldable device 101, 301, 401, 501, 601, 701, and/or 801 is considered to be foldable in one direction 104 of the folding axis 102 of the foldable device The dimensions of the foldable device taken between opposing edges of the device, where direction 104 also includes the direction of width 103 . Furthermore, throughout this disclosure, the length 105 of the foldable devices 101, 301, 401, 501, 601, 701 and/or 801 is considered to be perpendicular to the foldable devices 101, 301, 401, 501, 601, 701 and/or or 801 in one direction 106 of the folding axis 102 of the foldable device 101, 301, 401, 501, 601, 701 and/or 801 taken between the opposing edges of the foldable device 101, 301, 401, 501, 601, 701 and/or 801 dimensions. In some embodiments, as shown in FIGS. 1-5, the foldable device of any embodiment of the present disclosure may include a folding plane 109 including a folding axis 102, and when the foldable device is in a flat configuration (for example, see FIG. 1 ), it includes one direction of the substrate thickness 211 , 411 or 811 . In some embodiments, the plane 109 may include a central axis 107 of the foldable device. In some embodiments, the foldable device is foldable in direction 111 (eg, see FIG. 1 ) about a folding axis 102 extending in direction 104 of width 103 to form a folded configuration (eg, see FIG. 9 ) and Figures 11 to 12). As shown, the foldable device can include a single folding axis to allow the foldable device to contain a bifold, wherein, for example, the foldable device can be folded in half. In further embodiments, the foldable device may include two or more folding axes, wherein each folding axis includes a corresponding central portion similar or identical to central portion 281 , 481 or 881 discussed herein. For example, providing two folding axes may allow the foldable device to include a trifold, wherein, for example, the foldable device can be folded, wherein the first portion 221, 421 or 821, the second portion 231, 431 or 831 and the third a portion similar to a first portion having a central portion 281, 481 or 881 and another central portion (similar or identical to the central portion positioned between the first and second portions and between the second and third portions, respectively) or the second part.

包含可折疊設備206之可折疊設備101、301或601可包含定位於第一外層213與第二外層215之間的核心層207。可折疊設備401、501、701或801可包含可折疊基板407或807。在一些實施例中,可折疊基板407或807、第一外層213、第二外層215及/或核心層207可包含具有8H或更大(例如,9H或更大)之鉛筆硬度的一基於玻璃之基板及/或一基於陶瓷之基板。The foldable device 101 , 301 or 601 that includes the foldable device 206 may include a core layer 207 positioned between the first outer layer 213 and the second outer layer 215 . The foldable device 401 , 501 , 701 or 801 may include a foldable substrate 407 or 807 . In some embodiments, the foldable substrate 407 or 807, the first outer layer 213, the second outer layer 215, and/or the core layer 207 may comprise a glass-based glass having a pencil hardness of 8H or greater (eg, 9H or greater) substrate and/or a ceramic-based substrate.

在一些實施例中,可折疊基板407或807、第一外層213、第二外層215及/或核心層207可包含一基於玻璃之基板。如本文中所使用,「基於玻璃」包括玻璃及玻璃陶瓷,其中玻璃陶瓷具有一或多個結晶相及一非晶殘餘玻璃相。一基於玻璃之材料(例如,基於玻璃之基板)可包含一非晶材料(例如,玻璃),及視情況,一或多種結晶材料(例如,陶瓷)。可將非晶材料及基於玻璃之材料強化。如本文中使用,術語「經強化」可指已經化學強化之材料,例如,經由在基板之表面中將較大離子離子交換成較小離子,如下所論述。然而,可利用其他強化方法(例如,熱回火,或利用基板之部分之間的熱膨脹係數之失配來產生壓縮應力及中心拉伸區域)來形成經強化之基板。可無或有氧化鋰之例示性基於玻璃之材料包含鹼石灰玻璃、鹼鋁矽酸鹽玻璃、含鹼硼矽酸鹽玻璃、含鹼鋁硼矽酸鹽玻璃、含鹼磷矽酸鹽玻璃及含鹼鋁磷矽酸鹽玻璃。在一或多個實施例中,以莫耳百分比(莫耳%)計,基於玻璃之材料可包含:在自約40莫耳%至約80%之一範圍中的SiO2 、在自約5莫耳%至約30莫耳%之一範圍中的Al2 O3 、在自約0莫耳%至約10莫耳%之一範圍中的B2 O3 、在自約0莫耳%至約5莫耳%之一範圍中的ZrO2 、在自約0莫耳%至約15莫耳%之一範圍中的P2 O5 、在自約0莫耳%至約2莫耳%之一範圍中的TiO2 、在自約0莫耳%至約20莫耳%之一範圍中的R2 O及在自約0莫耳%至約15莫耳%之一範圍中的RO。如本文中所使用,R2 O可指鹼金屬氧化物,例如,Li2 O、Na2 O、K2 O、Rb2 O及Cs2 O。如本文中所使用,RO可指MgO、CaO、SrO、BaO及ZnO。在一些實施例中,基於玻璃之基板可視情況進一步包含在自約0莫耳%至約2莫耳%之一範圍中的以下各者中的每一者:Na2 SO4 、NaCl、NaF、NaBr、K2 SO4 、KCl、KF、KBr、As2 O3 、Sb2 O3 、SnO2 、Fe2 O3 、MnO、MnO2 、MnO3 、Mn2 O3 、Mn3 O4 、Mn2 O7 。「玻璃陶瓷」包括經由玻璃之受控制結晶生產的材料。在一些實施例中,玻璃陶瓷具有約1%至約99%結晶度。合適之玻璃陶瓷之實例可包括Li2 O-Al2 O3 -SiO2 系統(亦即,LAS系統)玻璃陶瓷、MgO-Al2 O3 -SiO2 系統(亦即,MAS系統)玻璃陶瓷、ZnO × Al2 O3 × nSiO2 (亦即,ZAS系統)及/或包括一主要結晶相之玻璃陶瓷(包括β-石英固溶體、β鋰輝石、堇青石、透鋰長石及/或二矽酸鋰)。該等玻璃陶瓷基板可使用化學強化製程來強化。在一或多個實施例中,MAS系統玻璃陶瓷基板可在Li2 SO4 熔鹽中強化,藉此可發生將2Li+ 交換成Mg2+In some embodiments, the foldable substrate 407 or 807, the first outer layer 213, the second outer layer 215, and/or the core layer 207 may comprise a glass-based substrate. As used herein, "glass-based" includes glasses and glass-ceramics, wherein the glass-ceramic has one or more crystalline phases and an amorphous residual glass phase. A glass-based material (eg, a glass-based substrate) can include an amorphous material (eg, glass), and optionally, one or more crystalline materials (eg, ceramic). Amorphous materials and glass-based materials can be strengthened. As used herein, the term "strengthened" may refer to a material that has been chemically strengthened, eg, by ion-exchange of larger ions for smaller ions in the surface of the substrate, as discussed below. However, other strengthening methods, such as thermal tempering, or utilizing mismatches in thermal expansion coefficients between portions of the substrate to create compressive stress and a central tensile region, can be utilized to form the strengthened substrate. Exemplary glass-based materials that may be without or with lithium oxide include soda lime glass, alkali aluminosilicate glass, alkali borosilicate glass, alkali aluminoborosilicate glass, alkali phosphosilicate glass, and Alkali-aluminophosphosilicate glass. In one or more embodiments, on a molar percent (mol%) basis, the glass-based material may comprise: SiO2 in a range from about 40 mol% to about 80%, in a range from about 5 mol% Al 2 O 3 in a range from about 0 mol % to about 30 mol %, B 2 O 3 in a range from about 0 mol % to about 10 mol %, in a range from about 0 mol % to about 10 mol % ZrO 2 in a range from about 5 mol %, P 2 O 5 in a range from about 0 mol % to about 15 mol %, in a range from about 0 mol % to about 2 mol % TiO2 in a range, R2O in a range from about 0 mol% to about 20 mol%, and RO in a range from about 0 mol% to about 15 mol%. As used herein, R 2 O may refer to alkali metal oxides, eg, Li 2 O, Na 2 O, K 2 O, Rb 2 O, and Cs 2 O. As used herein, RO may refer to MgO, CaO, SrO, BaO, and ZnO. In some embodiments, the glass-based substrate may optionally further comprise each of the following in a range from about 0 mol% to about 2 mol%: Na2SO4 , NaCl, NaF , NaBr, K 2 SO 4 , KCl, KF, KBr, As 2 O 3 , Sb 2 O 3 , SnO 2 , Fe 2 O 3 , MnO, MnO 2 , MnO 3 , Mn 2 O 3 , Mn 3 O 4 , Mn 2 O 7 . "Glass-ceramic" includes materials produced by controlled crystallization of glass. In some embodiments, the glass-ceramic has about 1% to about 99% crystallinity. Examples of suitable glass-ceramics may include Li2O - Al2O3 - SiO2 system (ie, LAS system) glass-ceramic, MgO - Al2O3 - SiO2 system (ie, MAS system) glass-ceramic, ZnO x Al 2 O 3 x nSiO 2 (ie, ZAS systems) and/or glass-ceramics including a predominant crystalline phase (including β-quartz solid solution, β-spodumene, cordierite, hectorite, and/or bismuth) Lithium Silicate). These glass-ceramic substrates can be strengthened using chemical strengthening processes. In one or more embodiments, the MAS system glass-ceramic substrate can be strengthened in a Li2SO4 molten salt, whereby the exchange of 2Li + for Mg2 + can occur.

在一些實施例中,可折疊基板407或807、第一外層213、第二外層215及/或核心層207可包含一基於陶瓷之基板。如本文中所使用,「基於陶瓷」包括陶瓷及玻璃陶瓷,其中玻璃陶瓷具有一或多個結晶相及一非晶殘餘玻璃相。可將基於陶瓷之材料強化(例如,化學強化)。在一些實施例中,可藉由加熱基於玻璃之材料以形成陶瓷(例如,結晶)部分來形成基於陶瓷之材料。在另外實施例中,基於陶瓷之材料可包含可有助於結晶相之形成的一或多種成核劑。在一些實施例中,該基於陶瓷之材料可包含一或多種氧化物、氮化物、氮氧化物、碳化物、硼化物及/或矽化物。陶瓷氧化物之例示性實施例包括氧化鋯(ZrO2 )、氧化鋯矽酸鋯(ZrSiO4 )、鹼金屬氧化物(例如,氧化鈉(Na2 O))、鹼土金屬氧化物(例如,氧化鎂(MgO))、氧化鈦(TiO2 )、氧化鉿(Hf2 O)、氧化釔(Y2 O3 )、氧化鐵、氧化鈹、氧化釩(VO2 )、熔融石英、富鋁紅柱石(包含氧化鋁與二氧化矽之組合的礦石)及尖晶石(MgAl2 O4 )。陶瓷氮化物之例示性實施例包括氮化矽(Si3 N4 )、氮化鋁(AlN)、氮化鎵(GaN)、氮化鈹(Be3 N2 )、氮化硼(BN)、氮化鎢(WN)、氮化釩、鹼土金屬氮化物(例如,氮化鎂(Mg3 N2 ))、氮化鎳及氮化鉭。氮氧化物陶瓷之例示性實施例包括氮氧化矽、氮氧化鋁及SiAlON(氧化鋁與氮氧化矽之組合,且可具有例如Si12-m-n Alm+n On N16-n 、Si6-n Aln On N8-n 或Si2-n Aln O1+n N2-n 之化學式,其中m、n及所得下標皆為非負整數)。碳化物及含碳陶瓷之例示性實施例包括碳化矽(SiC)、碳化鎢(WC)、碳化鐵、碳化硼(B4 C)、鹼金屬碳化物(例如,碳化鋰(Li4 C3 ))、鹼土金屬碳化物(例如,碳化鎂(Mg2 C3 ))及石墨。硼化物之例示性實施例包括硼化鉻(CrB2 )、硼化鉬(Mo2 B5 )、硼化鎢(W2 B5 )、硼化鐵、硼化鈦、硼化鋯(ZrB2 )、硼化鉿(HfB2 )、硼化釩(VB2 )、硼化鈮(NbB2 )及硼化鑭(LaB6 )。矽化物之實例實施例包括二矽化鉬(MoSi2 )、二矽化鎢(WSi2 )、二矽化鈦(TiSi2 )、矽化鎳(NiSi)、鹼土矽化物(例如,矽化鈉(NaSi))、鹼金屬矽化物(例如,矽化鎂(Mg2 Si))、二矽化鉿(HfSi2 )及矽化鉑(PtSi)。In some embodiments, the foldable substrate 407 or 807, the first outer layer 213, the second outer layer 215, and/or the core layer 207 may comprise a ceramic-based substrate. As used herein, "ceramic-based" includes ceramics and glass-ceramics, wherein the glass-ceramic has one or more crystalline phases and an amorphous residual glass phase. Ceramic-based materials can be strengthened (eg, chemically strengthened). In some embodiments, the ceramic-based material may be formed by heating the glass-based material to form a ceramic (eg, crystalline) portion. In further embodiments, the ceramic-based material can include one or more nucleating agents that can aid in the formation of a crystalline phase. In some embodiments, the ceramic-based material may include one or more oxides, nitrides, oxynitrides, carbides, borides, and/or silicides. Illustrative examples of ceramic oxides include zirconia (ZrO 2 ), zirconia zirconium silicate (ZrSiO 4 ), alkali metal oxides (eg, sodium oxide (Na 2 O)), alkaline earth metal oxides (eg, oxide magnesium (MgO)), titanium oxide (TiO 2 ), hafnium oxide (Hf 2 O), yttrium oxide (Y 2 O 3 ), iron oxide, beryllium oxide, vanadium oxide (VO 2 ), fused silica, mullite (ore containing a combination of alumina and silica) and spinel (MgAl 2 O 4 ). Exemplary embodiments of ceramic nitrides include silicon nitride (Si 3 N 4 ), aluminum nitride (AlN), gallium nitride (GaN), beryllium nitride (Be 3 N 2 ), boron nitride (BN), Tungsten nitride (WN), vanadium nitride, alkaline earth metal nitrides (eg, magnesium nitride ( Mg3N2 )), nickel nitride, and tantalum nitride. Exemplary embodiments of oxynitride ceramics include silicon oxynitride, aluminum oxynitride, and SiAlON (a combination of aluminum oxide and silicon oxynitride, and can have, for example, Si12 -mn Alm + nOnN16 -n , Si6 -n Al n On N 8-n or the chemical formula of Si 2-n Al n O 1+n N 2-n , where m, n and the resulting subscripts are all non-negative integers). Exemplary embodiments of carbides and carbon-containing ceramics include silicon carbide (SiC), tungsten carbide (WC), iron carbide, boron carbide (B4C), alkali metal carbides (eg, lithium carbide ( Li4C3 ) ), alkaline earth metal carbides (eg, magnesium carbide (Mg 2 C 3 )), and graphite. Exemplary examples of borides include chromium boride (CrB 2 ), molybdenum boride (Mo 2 B 5 ), tungsten boride (W 2 B 5 ), iron boride, titanium boride, zirconium boride (ZrB 2 ) ), hafnium boride (HfB 2 ), vanadium boride (VB 2 ), niobium boride (NbB 2 ) and lanthanum boride (LaB 6 ). Example embodiments of silicides include molybdenum disilicide (MoSi2), tungsten disilicide ( WSi2 ), titanium disilicide ( TiSi2 ) , nickel silicide (NiSi), alkaline earth silicides (eg, sodium silicide (NaSi)), Alkali metal silicides (eg, magnesium silicide (Mg 2 Si)), hafnium disilicide (HfSi 2 ), and platinum silicide (PtSi).

貫穿本揭露內容,在23℃及50%相對濕度下,藉由I型狗骨形樣本,使用拉伸測試機(例如,Instron 3400或Instron 6800),使用ASTM D638判定聚合材料(例如,黏著性的基於聚合物之部分)之拉伸強度、極限伸長(例如,破壞應變)及屈服點。貫穿本揭露內容,使用ISO 527-1:2019量測彈性模數(例如,楊氏模數)及/或泊松比。在一些實施例中,可折疊基板206、407或807、第一外層213、第二外層215及/或核心層207可包含約1吉帕斯卡(GPa)或更大、約3 GPa或更大、約5 GPa或更大、約10 GPa或更大、約100 GPa或更小、約80 GPa或更小、約60 GPa或更小或約20 GPa或更小之一彈性模數。在一些實施例中,可折疊基板206、407或807可包含在自約1 GPa至約100 GPa、自約1 GPa至約80 GPa、自約3 GPa至約80 GPa、自約3 GPa至約60 GPa、自約5 GPa至約60 GPa、自約5 GPa至約20 GPa、自約10 GPa至約20 GPa之一範圍或在其間之任一範圍或子範圍中的一彈性模數。在另外實施例中,可折疊基板206、407或807、第一外層213、第二外層215及/或核心層207可包含一基於玻璃之部分或一基於陶瓷之部分,該部分包含在自約10 GPa至約100 GPa、自約40 GPa至約100 GPa、自約60 GPa至約100 GPa、自約60 GPa至約80 GPa、自約80 GPa至約100 GPa之一範圍或在其間之任一範圍或子範圍中的一彈性模數。Throughout this disclosure, polymeric materials (eg, adhesion properties) were determined using ASTM D638 using a tensile testing machine (eg, Instron 3400 or Instron 6800) with Type I dogbone specimens at 23°C and 50% relative humidity of the polymer-based portion), ultimate elongation (eg, strain at failure), and yield point. Throughout this disclosure, ISO 527-1:2019 is used to measure elastic modulus (eg, Young's modulus) and/or Poisson's ratio. In some embodiments, foldable substrate 206, 407 or 807, first outer layer 213, second outer layer 215, and/or core layer 207 may comprise about 1 gigapascal (GPa) or more, about 3 GPa or more, One of elastic modulus of about 5 GPa or more, about 10 GPa or more, about 100 GPa or less, about 80 GPa or less, about 60 GPa or less, or about 20 GPa or less. In some embodiments, the foldable substrate 206, 407, or 807 can be comprised in from about 1 GPa to about 100 GPa, from about 1 GPa to about 80 GPa, from about 3 GPa to about 80 GPa, from about 3 GPa to about An elastic modulus in a range of 60 GPa, from about 5 GPa to about 60 GPa, from about 5 GPa to about 20 GPa, from about 10 GPa to about 20 GPa, or in any range or sub-range therebetween. In further embodiments, the foldable substrate 206, 407 or 807, the first outer layer 213, the second outer layer 215, and/or the core layer 207 may comprise a glass-based portion or a ceramic-based portion that is included in a self-contained 10 GPa to about 100 GPa, from about 40 GPa to about 100 GPa, from about 60 GPa to about 100 GPa, from about 60 GPa to about 80 GPa, from about 80 GPa to about 100 GPa, or any range therebetween A modulus of elasticity in a range or subrange.

在一些實施例中,可折疊基板206、407或807、第一外層213、第二外層215及/或核心層207可光學透明。如本文中使用,「光學透明」或「光學清透」意謂穿過1.0 mm厚材料件時在400 nm至700 nm之波長範圍中為70%或更大之一平均透射比。在一些實施例中,「光學透明材料」或「光學清透材料」在穿過1.0 mm厚材料件時,在400 nm至700 nm之波長範圍中可具有75%或更大、80%或更大、85%或更大、或90%或更大、92%或更大、94%或更大、96%或更大之一平均透射比。在400 nm至700 nm之波長中的平均透射比係藉由量測自約400 nm至約700 nm之全數波長之透射比且將該等量測結果平均化來計算。In some embodiments, the foldable substrate 206, 407, or 807, the first outer layer 213, the second outer layer 215, and/or the core layer 207 may be optically transparent. As used herein, "optically clear" or "optically clear" means an average transmittance of 70% or greater in the wavelength range of 400 nm to 700 nm through a 1.0 mm thick piece of material. In some embodiments, an "optically clear material" or "optically clear material" may have 75% or more, 80% or more in the wavelength range of 400 nm to 700 nm when passing through a 1.0 mm thick piece of material One of greater, 85% or greater, or 90% or greater, 92% or greater, 94% or greater, 96% or greater average transmittance. The average transmittance in wavelengths from 400 nm to 700 nm is calculated by measuring the transmittance from all wavelengths from about 400 nm to about 700 nm and averaging the measurements.

如在第2圖至第3圖、第6圖及第11圖中展示,可折疊設備101、301及601及測試可折疊設備1102包含可折疊基板206。可折疊基板包含一第一主表面203及與第一主表面203相對之一第二主表面205。如在第2圖至第3圖及第6圖中展示,第一主表面203可沿著第一平面204a延伸。第二主表面205可沿著一第二平面204b延伸。在一些實施例中,如所展示,第二平面204b可平行於第一平面204a。如在本文中使用,基板厚度211可界定於第一主表面203與第二主表面205之間,作為第一平面204a與第二平面204b之間的距離。As shown in FIGS. 2-3 , 6 and 11 , foldable devices 101 , 301 and 601 and test foldable device 1102 include foldable substrate 206 . The foldable substrate includes a first main surface 203 and a second main surface 205 opposite to the first main surface 203 . As shown in FIGS. 2-3 and 6, the first major surface 203 may extend along the first plane 204a. The second major surface 205 may extend along a second plane 204b. In some embodiments, as shown, the second plane 204b may be parallel to the first plane 204a. As used herein, substrate thickness 211 may be defined between first major surface 203 and second major surface 205 as the distance between first plane 204a and second plane 204b.

如在第2圖至第3圖、第6圖及第11圖中展示,可折疊基板206可包含第一外層213。如所展示,第一外層213可包含第一主表面203及與第一主表面203相對之一第一內表面214。在一些實施例中,當可折疊設備101、301及/或601在平配置中時,第一內表面214可沿著第三平面204c延伸。如在本文中使用,第一外層213之第一外厚度217可界定於第一主表面203與第一內表面214之間,作為第一平面204a與第三平面204c之間的距離。在一些實施例中,基板厚度211可為約10微米(μm)或更大、約25 μm或更大、約40 μm或更大、約60 μm或更大、約80 μm或更大、約100 μm或更大、約125 μm或更大、約150 μm或更大、約2毫米(mm)或更小、約1 mm或更小、約800 μm或更小、約500 μm或更小、約300 μm或更小、約200 μm或更小、約180 μm或更小或約160 μm或更小。在一些實施例中,基板厚度211可在自約10 μm至約2 mm、自約25 μm至約2 mm、自約40 μm至約2 mm、自約60 μm至約2 mm、自約80 μm至約2 mm、自約100 μm至約2 mm、自約100 μm至約1 mm、自約100 μm至約800 μm、自約100 μm至約500 μm、自約125 μm至約500 μm、自約125 μm至約300 μm、自約125 μm至約200 μm、自約150 μm至約200 μm、自約150 μm至約160 μm之一範圍或其間之任一範圍或子範圍中。As shown in FIGS. 2-3 , 6 , and 11 , the foldable substrate 206 may include a first outer layer 213 . As shown, the first outer layer 213 can include the first major surface 203 and a first inner surface 214 opposite the first major surface 203 . In some embodiments, the first inner surface 214 may extend along the third plane 204c when the foldable device 101, 301 and/or 601 is in a flat configuration. As used herein, the first outer thickness 217 of the first outer layer 213 may be defined between the first major surface 203 and the first inner surface 214 as the distance between the first plane 204a and the third plane 204c. In some embodiments, the substrate thickness 211 may be about 10 micrometers (μm) or greater, about 25 μm or greater, about 40 μm or greater, about 60 μm or greater, about 80 μm or greater, about 100 μm or more, about 125 μm or more, about 150 μm or more, about 2 millimeters (mm) or less, about 1 mm or less, about 800 μm or less, about 500 μm or less , about 300 μm or less, about 200 μm or less, about 180 μm or less, or about 160 μm or less. In some embodiments, the substrate thickness 211 may be from about 10 μm to about 2 mm, from about 25 μm to about 2 mm, from about 40 μm to about 2 mm, from about 60 μm to about 2 mm, from about 80 μm to about 2 mm μm to about 2 mm, from about 100 μm to about 2 mm, from about 100 μm to about 1 mm, from about 100 μm to about 800 μm, from about 100 μm to about 500 μm, from about 125 μm to about 500 μm , from about 125 μm to about 300 μm, from about 125 μm to about 200 μm, from about 150 μm to about 200 μm, from about 150 μm to about 160 μm, or in any range or sub-range therebetween.

現將參考第2圖之可折疊設備101來描述第一外層213,同時理解除非另有敘述,否則第一外層213之此描述亦可適用於本揭露內容之任何實施例,例如,在第3圖、第6圖及第11圖中圖示之可折疊設備301及/或601、測試可折疊設備1102及/或可折疊基板206。如在第2圖中展示,第一外層213可包含一第一部分213a及一第二部分213b。一第一最小距離210可界定於該第一外層213之第一部分213a與該第一外層213之第二部分213b之間。在一些實施例中,第一外層213之第一部分213a可包含第一主表面203之第一表面區223,及第一內表面214之與第一表面區223相對的第一內表面區214a。在一些實施例中,第一外層213之第二部分213b可包含第一主表面203之第三表面區233,及第一內表面214之與第三表面區233相對的第二內表面區214b。在一些實施例中,如所展示,第一表面區223及第三表面區233可沿著第一平面204a延伸。在一些實施例中,如所展示,第一內表面區214a及第二內表面區214b可沿著第三平面204c延伸。在一些實施例中,第一外層213之第一部分213a可包含第一外厚度217。在另外實施例中,第一外厚度217可跨其對應的長度(亦即,在可折疊設備之長度105之方向106上)及/或其對應的寬度(亦即,在可折疊設備之寬度103之方向104上)在第一表面區223與第一內表面區214a之間實質上均勻。在一些實施例中,第一外層213之第二部分213b可包含第一外厚度217。在另外實施例中,第一外厚度217可跨其對應的長度(亦即,在可折疊設備之長度105之方向106上)及/或其對應的寬度(亦即,在可折疊設備之寬度103之方向104上)在第三表面區233與第二內表面區214b之間實質上均勻。The first outer layer 213 will now be described with reference to the foldable device 101 of FIG. 2, with the understanding that unless otherwise stated, this description of the first outer layer 213 may also apply to any embodiment of the present disclosure, for example, in FIG. 3 Foldable device 301 and/or 601 , test foldable device 1102 and/or foldable substrate 206 illustrated in FIGS. 6 and 11 . As shown in Figure 2, the first outer layer 213 may include a first portion 213a and a second portion 213b. A first minimum distance 210 may be defined between the first portion 213a of the first outer layer 213 and the second portion 213b of the first outer layer 213 . In some embodiments, the first portion 213a of the first outer layer 213 may include a first surface region 223 of the first major surface 203 , and a first inner surface region 214a of the first inner surface 214 opposite the first surface region 223 . In some embodiments, the second portion 213b of the first outer layer 213 may include a third surface region 233 of the first major surface 203 and a second inner surface region 214b of the first inner surface 214 opposite the third surface region 233 . In some embodiments, as shown, the first surface region 223 and the third surface region 233 may extend along the first plane 204a. In some embodiments, as shown, the first inner surface region 214a and the second inner surface region 214b may extend along the third plane 204c. In some embodiments, the first portion 213a of the first outer layer 213 may include a first outer thickness 217 . In further embodiments, the first outer thickness 217 may span its corresponding length (ie, in the direction 106 of the length 105 of the foldable device) and/or its corresponding width (ie, in the width of the foldable device) 104 in the direction 103) is substantially uniform between the first surface region 223 and the first inner surface region 214a. In some embodiments, the second portion 213b of the first outer layer 213 may include the first outer thickness 217 . In further embodiments, the first outer thickness 217 may span its corresponding length (ie, in the direction 106 of the length 105 of the foldable device) and/or its corresponding width (ie, in the width of the foldable device) 104 in the direction 103) is substantially uniform between the third surface region 233 and the second inner surface region 214b.

如在第2圖至第3圖、第6圖及第11圖中展示,可折疊基板206可包含第二外層215。如所展示,第二外層215可包含第二主表面205及與第二主表面205相對之一第二內表面216。在一些實施例中,當可折疊設備101、301及/或601在平配置中時,第二內表面216可沿著第四平面204d延伸。如在本文中使用,第二外層215之第二外厚度237可界定於第二主表面205與第二內表面216之間,作為第二平面204b與第四平面204d之間的距離。As shown in FIGS. 2-3 , 6 and 11 , the foldable substrate 206 may include a second outer layer 215 . As shown, the second outer layer 215 can include the second major surface 205 and a second inner surface 216 opposite the second major surface 205 . In some embodiments, the second inner surface 216 may extend along the fourth plane 204d when the foldable devices 101, 301 and/or 601 are in a flat configuration. As used herein, the second outer thickness 237 of the second outer layer 215 may be defined between the second major surface 205 and the second inner surface 216 as the distance between the second plane 204b and the fourth plane 204d.

現將參考第2圖之可折疊設備101來描述第二外層215,同時理解除非另有敘述,否則第二外層215之此描述亦可適用於本揭露內容之任何實施例,例如,在第3圖、第6圖及第11圖中圖示之可折疊設備301及/或601、測試可折疊設備1102及/或可折疊基板206。如在第2圖中展示,第二外層215可包含一第一部分215a及一第二部分215b。一第二最小距離220可界定於該第二外層215之第一部分215a與該第二外層215之第二部分215b之間。在一些實施例中,第二外層215之第一部分215a可包含第二主表面205之第二表面區225,及第二內表面216之與第二表面區225相對的第三內表面區216a。在一些實施例中,第二外層215之第二部分215b可包含第二主表面205之第四表面區235,及第二內表面216之與第四表面區235相對的第四內表面區216b。在一些實施例中,如所展示,第二表面區225及第四表面區235可沿著第二平面204b延伸。在一些實施例中,如所展示,第三內表面區216a及第四內表面區216b可沿著第四平面204d延伸。在一些實施例中,第二外層215之第一部分215a可包含第二外厚度237。在另外實施例中,第二外厚度237可跨其對應的長度(亦即,在可折疊設備之長度105之方向106上)及/或其對應的寬度(亦即,在可折疊設備之寬度103之方向104上)在第二表面區225與第三內表面區216a之間實質上均勻。在一些實施例中,第二外層215之第二部分215b可包含第二外厚度237。在另外實施例中,第二外厚度237可跨其對應的長度(亦即,在可折疊設備之長度105之方向106上)及/或其對應的寬度(亦即,在可折疊設備之寬度103之方向104上)在第四表面區235與第四內表面區216b之間實質上均勻。The second outer layer 215 will now be described with reference to the foldable device 101 of FIG. 2, with the understanding that unless otherwise stated, this description of the second outer layer 215 may also apply to any embodiment of the present disclosure, eg, in FIG. 3 Foldable device 301 and/or 601 , test foldable device 1102 and/or foldable substrate 206 illustrated in FIGS. 6 and 11 . As shown in Figure 2, the second outer layer 215 may include a first portion 215a and a second portion 215b. A second minimum distance 220 may be defined between the first portion 215a of the second outer layer 215 and the second portion 215b of the second outer layer 215 . In some embodiments, the first portion 215a of the second outer layer 215 may include a second surface region 225 of the second major surface 205 and a third inner surface region 216a of the second inner surface 216 opposite the second surface region 225 . In some embodiments, the second portion 215b of the second outer layer 215 may include a fourth surface region 235 of the second major surface 205 and a fourth inner surface region 216b of the second inner surface 216 opposite the fourth surface region 235 . In some embodiments, as shown, the second surface region 225 and the fourth surface region 235 may extend along the second plane 204b. In some embodiments, as shown, the third inner surface region 216a and the fourth inner surface region 216b may extend along the fourth plane 204d. In some embodiments, the first portion 215a of the second outer layer 215 may include a second outer thickness 237 . In further embodiments, the second outer thickness 237 may span its corresponding length (ie, in the direction 106 of the length 105 of the foldable device) and/or its corresponding width (ie, in the width of the foldable device) 104 in direction 103) is substantially uniform between the second surface region 225 and the third inner surface region 216a. In some embodiments, the second portion 215b of the second outer layer 215 may include a second outer thickness 237 . In further embodiments, the second outer thickness 237 may span its corresponding length (ie, in the direction 106 of the length 105 of the foldable device) and/or its corresponding width (ie, in the width of the foldable device) 104 in direction 103) is substantially uniform between the fourth surface region 235 and the fourth inner surface region 216b.

如在第2圖至第3圖、第6圖及第11圖中展示,可折疊基板206可包含核心層207。如所展示,核心層207可包含第三內表面208及與第三內表面208相對之一第四內表面218。在一些實施例中,第三內表面208可沿著第三平面204c延伸。在一些實施例中,第四內表面218可沿著第四平面204d延伸。如在本文中使用,核心層207之中心厚度227可界定於第三內表面208與第四內表面218之間,作為第三平面204c與第四平面204d之間的距離。As shown in FIGS. 2-3 , 6 and 11 , the foldable substrate 206 may include a core layer 207 . As shown, the core layer 207 may include a third inner surface 208 and a fourth inner surface 218 opposite the third inner surface 208 . In some embodiments, the third inner surface 208 may extend along the third plane 204c. In some embodiments, the fourth inner surface 218 may extend along the fourth plane 204d. As used herein, the center thickness 227 of the core layer 207 may be defined between the third inner surface 208 and the fourth inner surface 218 as the distance between the third plane 204c and the fourth plane 204d.

在一些實施例中,第一外厚度217、第二外厚度237及/或中心厚度227可為約1 μm或更大、約5 μm或更大、約10 μm或更大、約25 μm或更大、約40 μm或更大、約80 μm或更大、約100 μm或更大、約125 μm或更大、約150 μm或更大、約1 mm或更小、約800 μm或更小、約500 μm或更小、約300 μm或更小、約200 μm或更小、約180 μm或更小或約160 μm或更小。在一些實施例中,第一外厚度217、第二外厚度237及/或中心厚度227可在自約1 μm至約1 mm、自約1 μm至約800 μm、自約5 μm至約800 μm、自約5 μm至約500 μm、自約10 μm至約500 μm、自約10 μm至約300 μm、自約25 μm至約300 μm、自約25 μm至約200 μm、自約40 μm至約200 μm、自約80 μm至約200 μm、自約80 μm至約200 μm、自約100 μm至約200 μm、自約125 μm至約200 μm、自約125 μm至約180 μm、自約125 μm至約160 μm、自約125 μm至約150 μm之一範圍或其間之任一範圍或子範圍中。在另外實施例中,中心厚度227可為約1 μm或更大、約5 μm或更大、約10 μm或更大、約25 μm或更大、約40 μm或更大、約100 μm或更小、約80 μm或更小、約60 μm或更小或約50 μm或更小。在另外實施例中,中心厚度227可在自約1 µm至約100 µm、自約5 µm至約100 µm、自約10 µm至約100 µm、自約10 µm至約80 µm、自約25 µm至約80 µm、自約25 µm至約60 µm、自約40 µm至約60 µm之一範圍或其間之任一範圍或子範圍中。在一些實施例中,第一外厚度217可實質上等於第二外厚度237。在一些實施例中,第一外厚度217可大於第二外厚度237。在一些實施例中,第二外厚度237可大於第一外厚度217。In some embodiments, the first outer thickness 217, the second outer thickness 237, and/or the center thickness 227 may be about 1 μm or more, about 5 μm or more, about 10 μm or more, about 25 μm or more larger, about 40 μm or larger, about 80 μm or larger, about 100 μm or larger, about 125 μm or larger, about 150 μm or larger, about 1 mm or smaller, about 800 μm or larger Small, about 500 μm or less, about 300 μm or less, about 200 μm or less, about 180 μm or less, or about 160 μm or less. In some embodiments, the first outer thickness 217, the second outer thickness 237, and/or the center thickness 227 may range from about 1 μm to about 1 mm, from about 1 μm to about 800 μm, from about 5 μm to about 800 μm μm, from about 5 μm to about 500 μm, from about 10 μm to about 500 μm, from about 10 μm to about 300 μm, from about 25 μm to about 300 μm, from about 25 μm to about 200 μm, from about 40 μm μm to about 200 μm, from about 80 μm to about 200 μm, from about 80 μm to about 200 μm, from about 100 μm to about 200 μm, from about 125 μm to about 200 μm, from about 125 μm to about 180 μm , in a range from about 125 μm to about 160 μm, from about 125 μm to about 150 μm, or any range or sub-range therebetween. In further embodiments, the center thickness 227 may be about 1 μm or greater, about 5 μm or greater, about 10 μm or greater, about 25 μm or greater, about 40 μm or greater, about 100 μm or greater, or smaller, about 80 μm or less, about 60 μm or less, or about 50 μm or less. In further embodiments, the center thickness 227 may range from about 1 μm to about 100 μm, from about 5 μm to about 100 μm, from about 10 μm to about 100 μm, from about 10 μm to about 80 μm, from about 25 μm to about 100 μm In one of the range of µm to about 80 µm, from about 25 µm to about 60 µm, from about 40 µm to about 60 µm, or any range or sub-range therebetween. In some embodiments, the first outer thickness 217 may be substantially equal to the second outer thickness 237 . In some embodiments, the first outer thickness 217 may be greater than the second outer thickness 237 . In some embodiments, the second outer thickness 237 may be greater than the first outer thickness 217 .

現將參考第2圖之可折疊設備101來描述核心層207,同時理解除非另有敘述,否則核心層207之此描述亦可適用於本揭露內容之任何實施例,例如,在第3圖、第6圖及第11圖中圖示之可折疊設備301及/或601、測試可折疊設備1102及/或可折疊基板206。如在第2圖中展示,核心層207可定位於第一外層213與第二外層215之間。在一些實施例中,如所展示,核心層207之第三內表面208可接觸第一外層213之第一部分213a之第一內表面214之第一內表面區214a。在一些實施例中,如所展示,核心層207之第三內表面208可接觸第一外層213之第二部分213b之第一內表面214之第二內表面區214b。在一些實施例中,如所展示,核心層207之第四內表面218可接觸第二外層215之第一部分215a之第二內表面216之第三內表面區216a。在一些實施例中,如所展示,核心層207之第四內表面218可接觸第二外層215之第二部分215b之第四內表面區216b。The core layer 207 will now be described with reference to the foldable device 101 of FIG. 2, with the understanding that unless otherwise stated, this description of the core layer 207 is also applicable to any embodiment of the present disclosure, eg, in FIG. 3, Foldable device 301 and/or 601 , test foldable device 1102 and/or foldable substrate 206 are illustrated in FIGS. 6 and 11 . As shown in FIG. 2 , the core layer 207 may be positioned between the first outer layer 213 and the second outer layer 215 . In some embodiments, as shown, the third inner surface 208 of the core layer 207 can contact the first inner surface region 214a of the first inner surface 214 of the first portion 213a of the first outer layer 213 . In some embodiments, as shown, the third inner surface 208 of the core layer 207 can contact the second inner surface region 214b of the first inner surface 214 of the second portion 213b of the first outer layer 213 . In some embodiments, as shown, the fourth inner surface 218 of the core layer 207 can contact the third inner surface region 216a of the second inner surface 216 of the first portion 215a of the second outer layer 215 . In some embodiments, as shown, the fourth inner surface 218 of the core layer 207 may contact the fourth inner surface region 216b of the second portion 215b of the second outer layer 215 .

如在第2圖中展示,第三內表面208可包含在第一外層213之第一部分213a之第一內表面214之第一內表面區214a與第一外層213之第二部分213b之第一內表面214之第二內表面區214b之間的一第一中心表面區209。在一些實施例中,如所展示,核心層207之第一中心表面區209可自第一主表面203凹進去第一距離,該第一距離可實質上等於或大於第一外厚度217。第一凹座234可界定於第一平面204a與第一中心表面區209之間。As shown in FIG. 2 , the third inner surface 208 may comprise a first inner surface region 214a of the first inner surface 214 of the first portion 213a of the first outer layer 213 and a first portion of the second portion 213b of the first outer layer 213 A first central surface region 209 between the inner surface 214 and the second inner surface region 214b. In some embodiments, as shown, the first central surface region 209 of the core layer 207 can be recessed from the first major surface 203 a first distance, which can be substantially equal to or greater than the first outer thickness 217 . The first recess 234 may be defined between the first plane 204a and the first central surface region 209 .

如在第2圖中展示,第四內表面218可包含在第二外層215之第一部分215a之第二內表面216之第三內表面區216a與第二外層215之第二部分231之第二內表面216之第四內表面區216b之間的一第二中心表面區219。在一些實施例中,如所展示,核心層207之第二中心表面區219可自第二主表面205凹進去第二距離,該第二距離可實質上等於或大於第二外厚度237。第二凹座244可界定於第二平面204b與第二中心表面區219之間。As shown in FIG. 2, the fourth inner surface 218 may be included in the third inner surface region 216a of the second inner surface 216 of the first portion 215a of the second outer layer 215 and the second portion 231 of the second outer layer 215 A second central surface region 219 between the fourth inner surface regions 216b of the inner surface 216 . In some embodiments, as shown, the second central surface region 219 of the core layer 207 can be recessed from the second major surface 205 a second distance, which can be substantially equal to or greater than the second outer thickness 237 . The second recess 244 may be defined between the second plane 204b and the second central surface region 219 .

第一中心表面區209之寬度可實質上等於第一最小距離210,且第二中心表面區219之寬度可實質上等於第二最小距離220。在一些實施例中,第一最小距離210及/或第二最小距離220可為約1 mm或更大、約3 mm或更大、約5 mm或更大、約8 mm或更大、約10 mm或更大、約15 mm或更大、約20 mm或更大、約100 mm或更小、約60 mm或更小、約50 mm或更小、約40 mm或更小、約35 mm或更小、約30 mm或更小或約25 mm或更小。在一些實施例中,第一最小距離210及/或第二最小距離220可在自約1 mm至約100 mm、自約3 mm至約100 mm、自約3 mm至約60 mm、自約5 mm至約60 mm、自約5 mm至約50 mm、自約8 mm至約50 mm、自約8 mm至約40 mm、自約10 mm至約40 mm、自約10 mm至約35 mm、自約15 mm至約35 mm、自約15 mm至約30 mm、自約20 mm至約30 mm、自約20 mm至約25 mm之一範圍或其間之任一範圍或子範圍中。在一些實施例中,第一最小距離210可實質上等於第二最小距離220。在一些實施例中,第一最小距離210可大於第二最小距離220。在一些實施例中,第二最小距離220可大於第一最小距離210。The width of the first central surface region 209 may be substantially equal to the first minimum distance 210 , and the width of the second central surface region 219 may be substantially equal to the second minimum distance 220 . In some embodiments, the first minimum distance 210 and/or the second minimum distance 220 may be about 1 mm or more, about 3 mm or more, about 5 mm or more, about 8 mm or more, about 10 mm or more, about 15 mm or more, about 20 mm or more, about 100 mm or less, about 60 mm or less, about 50 mm or less, about 40 mm or less, about 35 mm or less, about 30 mm or less, or about 25 mm or less. In some embodiments, the first minimum distance 210 and/or the second minimum distance 220 may range from about 1 mm to about 100 mm, from about 3 mm to about 100 mm, from about 3 mm to about 60 mm, from about 5 mm to approx. 60 mm, from approx. 5 mm to approx. 50 mm, from approx. 8 mm to approx. 50 mm, from approx. 8 mm to approx. 40 mm, from approx. 10 mm to approx. 40 mm, from approx. 10 mm to approx. 35 mm mm, from about 15 mm to about 35 mm, from about 15 mm to about 30 mm, from about 20 mm to about 30 mm, from about 20 mm to about 25 mm, or in any range or sub-range therebetween . In some embodiments, the first minimum distance 210 may be substantially equal to the second minimum distance 220 . In some embodiments, the first minimum distance 210 may be greater than the second minimum distance 220 . In some embodiments, the second minimum distance 220 may be greater than the first minimum distance 210 .

在一些實施例中,作為基板厚度211之一百分比的第一中心表面區域209自第一平面204a凹進去之第一距離(例如,第一外厚度217)及/或作為基板厚度211之一百分比的第二中心表面區219自第二平面204b凹進去之第二距離(例如,第二外厚度237)可為約1%或更大、約5%或更大、約10%或更大、約15%或更大、約20%或更大、約25%或更大、約75%或更小、約60%或更小、約50%或更小、約40%或更小、約35%或更小或約30%或更小。在一些實施例中,作為基板厚度211之一百分比的第一距離及/或第二距離可在自約1%至約75%、自約1%至約60%、自約5%至約60%、自約5%至約50%、自約10%至約50%、自約10%至約40%、自約15%至約40%、自約15%至約35%、自約20%至約35%、自約20%至約30%、自約25%至約30%之一範圍或其間之任一範圍或子範圍中。在一些實施例中,第一距離可實質上等於第二距離。提供實質上等於第二距離之第一距離可進一步減少在中心部分中的機械不穩定性之發生,例如,因為可折疊基板關於包含基板厚度及中心厚度之一中點的一平面對稱。在一些實施例中,第二距離可大於第一距離。在一些實施例中,第一距離可大於第二距離。在另外實施例中,作為基板厚度211之一百分比的第二中心表面區219自第二平面204b凹進去之第二距離(例如,第二外厚度237)可為約1%或更大、約2%或更大、約5%或更大、約10%或更大、約12%或更大、約30%或更小、約25%或更小、約20%或更小、約18%或更小或約15%或更小。在另外實施例中,作為基板厚度211之一百分比的第二中心表面區219自第二平面204b凹進去之第二距離(例如,第二外厚度237)可在自約1%至約30%、自約1%至約25%、自約2%至約25%、自約5%至約25%、自約5%至約20%、自約10%至約20%、自約10%至約18%、自約12%至約18%、自約12%至約15%之一範圍或其間之任一範圍或子範圍中。In some embodiments, the first distance by which the first central surface area 209 is recessed from the first plane 204a (eg, the first outer thickness 217 ) as a percentage of the substrate thickness 211 and/or as a percentage of the substrate thickness 211 The second distance (eg, the second outer thickness 237) of the second central surface region 219 recessed from the second plane 204b may be about 1% or more, about 5% or more, about 10% or more, about 15% or more, about 20% or more, about 25% or more, about 75% or less, about 60% or less, about 50% or less, about 40% or less, about 35% or less or about 30% or less. In some embodiments, the first distance and/or the second distance as a percentage of the substrate thickness 211 may be from about 1% to about 75%, from about 1% to about 60%, from about 5% to about 60% %, from about 5% to about 50%, from about 10% to about 50%, from about 10% to about 40%, from about 15% to about 40%, from about 15% to about 35%, from about 20% % to about 35%, from about 20% to about 30%, from about 25% to about 30%, or any range or subrange therebetween. In some embodiments, the first distance may be substantially equal to the second distance. Providing the first distance substantially equal to the second distance can further reduce the occurrence of mechanical instabilities in the central portion, eg, because the foldable substrate is symmetric about a plane including a midpoint of the substrate thickness and the central thickness. In some embodiments, the second distance may be greater than the first distance. In some embodiments, the first distance may be greater than the second distance. In further embodiments, the second distance that the second central surface region 219 is recessed from the second plane 204b as a percentage of the substrate thickness 211 (eg, the second outer thickness 237 ) may be about 1% or greater, about 2% or more, about 5% or more, about 10% or more, about 12% or more, about 30% or less, about 25% or less, about 20% or less, about 18% % or less or about 15% or less. In further embodiments, the second distance by which the second central surface region 219 is recessed from the second plane 204b (eg, the second outer thickness 237 ) as a percentage of the substrate thickness 211 may be from about 1% to about 30% , from about 1% to about 25%, from about 2% to about 25%, from about 5% to about 25%, from about 5% to about 20%, from about 10% to about 20%, from about 10% to about 18%, from about 12% to about 18%, from about 12% to about 15%, or any range or sub-range therebetween.

在一些實施例中,作為基板厚度211之一百分比的中心厚度227可為約0.5%或更大、約1%或更大、約2%或更大、約5%或更大、約6%或更大、約20%或更小、約13%或更小、約10%或更小或約8%或更小。在一些實施例中,作為基板厚度211之一百分比的中心厚度227可在自約0.5%至約20%、自約0.5%至約13%、自約1%至約13%、自約1%至約10%、自約2%至約10%、自約2%至約8%、自約5%至約8%、自約6%至約8%之一範圍或其間之任一範圍或子範圍中。In some embodiments, the center thickness 227 as a percentage of the substrate thickness 211 can be about 0.5% or more, about 1% or more, about 2% or more, about 5% or more, about 6% or greater, about 20% or less, about 13% or less, about 10% or less, or about 8% or less. In some embodiments, the center thickness 227 as a percentage of the substrate thickness 211 may range from about 0.5% to about 20%, from about 0.5% to about 13%, from about 1% to about 13%, from about 1% to about 10%, from about 2% to about 10%, from about 2% to about 8%, from about 5% to about 8%, from about 6% to about 8%, or any range therebetween or in the subrange.

第一外層213可包含第一熱膨脹係數,第二外層215可包含第二熱膨脹係數,且核心層207可包含一核心熱膨脹係數。貫穿本揭露內容,可折疊基板或可折疊基板之一層的熱膨脹係數指基於溫度的線性膨脹速率,且在25℃下根據ASTM E228-17來量測。在一些實施例中,第一熱膨脹係數、第二熱膨脹係數及/或核心熱膨脹係數可為約5×10-7-1 或更大、約10×10-7-1 或更大、約20×10-7-1 或更大、約30×10-7-1 或更大、約40×10-7-1 或更大、約50×10-7-1 或更大、約60×10-7-1 或更大、約500×10-7-1 或更小、約300×10-7-1 或更小、約200×10-7-1 或更小、約150×10-7-1 或更小、約100×10-7-1 或更小、約90×10-7-1 或更小、約80×10-7-1 或更小或約70×10-7-1 或更小。在一些實施例中,第一熱膨脹係數、第二熱膨脹係數及/或核心熱膨脹係數可在自約5×10-7-1 至約500×10-7-1 、自約5×10-7-1 至約300×10-7-1 、自約10×10-7-1 至約300×10-7-1 、自約10×10-7-1 至約200×10-7-1 、自約20×10-7-1 至約200×10-7-1 、自約20×10-7-1 至約100×10-7-1 、自約30×10-7-1 至約100×10-7-1 、自約30×10-7-1 至約90×10-7-1 、自約40×10-7-1 至約90×10-7-1 、自約40×10-7-1 至約80×10-7-1 、自約50×10-7-1 至約80×10-7-1 、自約50×10-7-1 至約70×10-7-1 、自約60×10-7-1 至約70×10-7-1 之一範圍或其間之任一範圍或子範圍中。在一些實施例中,第一熱膨脹係數可實質上等於第二熱膨脹係數。在一些實施例中,核心熱膨脹係數可大於第一熱膨脹係數及/或第二熱膨脹係數。在另外實施例中,核心熱膨脹係數可比第一熱膨脹係數及/或第二熱膨脹係數大約5×10-7-1 或更大、約10×10-7-1 或更大、約20×10-7-1 或更大、約30×10-7-1 或更大、約40×10-7-1 或更大、約50×10-7-1 或更大,或約100×10-7-1 或更小、約80×10-7-1 或更小,或約70×10-7-1 或更小,或約60×10-7-1 或更大。在另外實施例中,核心熱膨脹係數可比第一熱膨脹係數及/或第二熱膨脹係數大之量可在自約5×10-7-1 至約100×10-7-1 、自約5×10-7-1 至約80×10-7-1 、自約10×10-7-1 至約80×10-7-1 、自約10×10-7-1 至約70×10-7-1 、自約20×10-7-1 至約70×10-7-1 、自約20×10-7-1 至約60×10-7-1 、自約30×10-7-1 至約60×10-7-1 、自約30×10-7-1 至約50×10-7-1 、自約40×10-7-1 至約60×10-7-1 、自約40×10-7-1 至約50×10-7-1 之一範圍或其間之任一範圍或子範圍中。如本文中所論述,控制核心層相對於第一外層及/或第二外層或中心部分相對於第一部分及/或第二部分之熱膨脹係數之間的差可減小可折疊設備及/或可折疊基板之層及/或部分之間的化學強化誘發膨脹及/或應變,此可有助於在可折疊設備及/或可折疊基板達到臨界挫曲應變(例如,機械不穩定性之開始)前的較大折疊誘發應變,以及減少光學失真之發生。The first outer layer 213 may include a first coefficient of thermal expansion, the second outer layer 215 may include a second coefficient of thermal expansion, and the core layer 207 may include a core coefficient of thermal expansion. Throughout this disclosure, the coefficient of thermal expansion of a foldable substrate or a layer of a foldable substrate refers to the linear expansion rate based on temperature, and is measured according to ASTM E228-17 at 25°C. In some embodiments, the first coefficient of thermal expansion, the second coefficient of thermal expansion, and/or the core thermal expansion coefficient may be about 5×10 −7 °C −1 or more, about 10×10 −7 °C −1 or more, about 20 × 10 -7 °C -1 or more, about 30 × 10 -7 °C -1 or more, about 40 × 10 -7 °C -1 or more, about 50 × 10 -7 °C -1 or more , about 60 × 10 -7 °C -1 or more, about 500 × 10 -7 °C -1 or less, about 300 × 10 -7 °C -1 or less, about 200 × 10 -7 °C -1 or less Smaller, about 150 × 10 -7 °C -1 or less, about 100 × 10 -7 °C -1 or less, about 90 × 10 -7 °C -1 or less, about 80 × 10 -7 °C - 1 or less or about 70×10 -7 °C -1 or less. In some embodiments, the first coefficient of thermal expansion, the second coefficient of thermal expansion, and/or the core thermal expansion coefficient may range from about 5×10 −7 °C −1 to about 500×10 −7 °C −1 , from about 5×10 −1 7-1 to about 300× 10-7-1 , from about 10× 10-7-1 to about 300× 10-7-1 , from about 10× 10-7-1 to about 200× 10-7-1 , from about 20× 10-7-1 to about 200× 10-7-1 , from about 20× 10-7-1 to about 100× 10-7-1 , from about About 30×10 -7 °C -1 to about 100×10 -7 °C -1 , from about 30×10 -7 °C -1 to about 90×10 -7 °C -1 , from about 40×10 -7 °C - 1 to about 90× 10-7 °C -1 , from about 40× 10-7 °C -1 to about 80× 10-7 °C -1 , from about 50× 10-7 °C -1 to about 80× 10-7 °C -1 , from about 50 x 10 -7 °C -1 to about 70 x 10 -7 °C -1 , from about 60 x 10 -7 °C -1 to about 70 x 10 -7 °C -1 or in a range between in any range or sub-range. In some embodiments, the first coefficient of thermal expansion may be substantially equal to the second coefficient of thermal expansion. In some embodiments, the core thermal expansion coefficient may be greater than the first thermal expansion coefficient and/or the second thermal expansion coefficient. In further embodiments, the core thermal expansion coefficient may be about 5×10 −7 °C −1 or greater, about 10×10 −7 °C −1 or greater, or about 20× greater than the first thermal expansion coefficient and/or the second thermal expansion coefficient. 10-7 °C -1 or greater, about 30× 10-7 °C -1 or greater, about 40× 10-7 °C -1 or greater, about 50× 10-7 °C -1 or greater, or About 100× 10-7 °C -1 or less, about 80× 10-7 °C -1 or less, or about 70× 10-7 °C -1 or less, or about 60× 10-7 °C -1 or larger. In further embodiments, the core thermal expansion coefficient may be greater than the first thermal expansion coefficient and/or the second thermal expansion coefficient by an amount from about 5×10 −7 °C −1 to about 100×10 −7 °C −1 , from about 5 × 10-7-1 to about 80× 10-7-1 , from about 10× 10-7-1 to about 80× 10-7-1 , from about 10× 10-7-1 to Approx. 70×10 -7-1 , from about 20×10 -7-1 to about 70×10 -7-1 , from about 20×10 -7-1 to about 60×10 -7- 1. From about 30× 10-7-1 to about 60× 10-7-1 , from about 30× 10-7-1 to about 50× 10-7-1 , from about 40×10- In a range of 7 °C -1 to about 60× 10-7 °C -1 , from about 40× 10-7 °C -1 to about 50× 10-7 °C -1 , or any range or sub-range therebetween. As discussed herein, controlling the difference between the coefficients of thermal expansion of the core layer relative to the first outer layer and/or the second outer layer or the central portion relative to the first portion and/or the second portion can reduce the foldable device and/or can Chemical strengthening between layers and/or portions of the folded substrate induces expansion and/or strain, which can help to reach critical buckling strains (eg, onset of mechanical instability) in the foldable device and/or foldable substrate The larger folding before the induced strain, and reduce the occurrence of optical distortion.

第一外層213可包含第一密度,第二外層215可包含第二密度,且核心層207可包含核心密度。貫穿本揭露內容,在25℃下根據ASTM C693-93 (2019)量測密度。在一些實施例中,第一密度、第二密度及/或核心密度可為約每立方公分2公克(g/cm3 )或更大、約2.2 g/cm3 或更大、約2.3 g/cm3 或更大、約2.4 g/cm3 或更大、約2.42 g/cm3 或更大、約2.45 g/cm3 或更大、約2.47 g/cm3 或更大、約3 g/cm3 或更小、約2.8 g/cm3 或更小、約2.7 g/cm3 或更小、約2.65 g/cm3 或更小、約2.6 g/cm3 或更小或約2.58 g/cm3 或更小、約2.55 g/cm3 或更小、約2.52 g/cm3 或更小或約2.5 g/cm3 或更小。在一些實施例中,第一密度、第二密度及/或核心密度可在自約2 g/cm3 至約3 g/cm3 、自約2 g/cm3 至約2.8 g/cm3 、自約2.2 g/cm3 至約2.8 g/cm3 、自約2.2 g/cm3 至約2.7 g/cm3 、自約2.3 g/cm3 至約2.7 g/cm3 、自約2.4 g/cm3 至約2.7 g/cm3 、自約2.42 g/cm3 至約2.7 g/cm3 、自約2.42 g/cm3 至約2.68 g/cm3 、自約2.45 g/cm3 至約2.68 g/cm3 、自約2.45 g/cm3 至約2.65 g/cm3 、自約2.48 g/cm3 至約2.65 g/cm3 、自約2.48 g/cm3 至約2.52 g/cm3 、自約2.48 g/cm3 至約2.5 g/cm3 之一範圍或其間之任一範圍或子範圍中。在一些實施例中,第一密度可實質上等於第二密度。在一些實施例中,核心密度可大於第一密度及/或第二密度。在另外實施例中,核心密度可比第一密度及/或第二密度大約0.005 g/cm3 或更大、約0.01 g/cm3 或更大、約0.015 g/cm3 或更大、約0.02 g/cm3 或更大、約0.025 g/cm3 或更大、約0.055 g/cm3 或更小、約0.05 g/cm3 或更小、約0.045 g/cm3 或更小、約0.04 g/cm3 或更小、約0.35 g/cm3 或更小或約0.3 g/cm3 或更小。在另外實施例中,核心密度可比第一密度及/或第二密度大的量可在自約0.005 g/cm3 至約0.055 g/cm3 、自約0.005 g/cm3 至約0.05 g/cm3 、自約0.01 g/cm3 至約0.05 g/cm3 、自約0.01 g/cm3 至約0.045 g/cm3 、自約0.015 g/cm3 至約0.045 g/cm3 、自約0.015 g/cm3 至約0.04 g/cm3 、自約0.02 g/cm3 至約0.04 g/cm3 、自約0.02 g/cm3 至約0.035 g/cm3 、自約0.025 g/cm3 至約0.035 g/cm3 、自約0.025 g/cm3 至約0.03 g/cm3 之一範圍或其間之任一範圍或子範圍中。如本文中所論述,控制核心層相對於第一外層及/或第二外層或中心部分相對於第一部分及/或第二部分之密度之間的差可減小可折疊設備及/或可折疊基板之層及/或部分之間的化學強化誘發膨脹及/或應變,此可有助於在可折疊設備及/或可折疊基板達到臨界挫曲應變(例如,機械不穩定性之開始)前的較大折疊誘發應變,以及減少光學失真之發生。The first outer layer 213 may include a first density, the second outer layer 215 may include a second density, and the core layer 207 may include a core density. Throughout this disclosure, density is measured according to ASTM C693-93 (2019) at 25°C. In some embodiments, the first density, the second density, and/or the core density may be about 2 grams per cubic centimeter (g/cm 3 ) or greater, about 2.2 g/cm 3 or greater, about 2.3 g/cm cm 3 or more, about 2.4 g/cm 3 or more, about 2.42 g/cm 3 or more, about 2.45 g/cm 3 or more, about 2.47 g/cm 3 or more, about 3 g/ cm 3 or less, about 2.8 g/cm 3 or less, about 2.7 g/cm 3 or less, about 2.65 g/cm 3 or less, about 2.6 g/cm 3 or less, or about 2.58 g/cm cm 3 or less, about 2.55 g/cm 3 or less, about 2.52 g/cm 3 or less, or about 2.5 g/cm 3 or less. In some embodiments, the first density, the second density, and/or the core density can range from about 2 g/cm 3 to about 3 g/cm 3 , from about 2 g/cm 3 to about 2.8 g/cm 3 , from about 2.2 g/cm 3 to about 2.8 g/cm 3 , from about 2.2 g/cm 3 to about 2.7 g/cm 3 , from about 2.3 g/cm 3 to about 2.7 g/cm 3 , from about 2.4 g/cm cm 3 to about 2.7 g/cm 3 , from about 2.42 g/cm 3 to about 2.7 g/cm 3 , from about 2.42 g/cm 3 to about 2.68 g/cm 3 , from about 2.45 g/cm 3 to about 2.68 g/cm 3 , from about 2.45 g/cm 3 to about 2.65 g/cm 3 , from about 2.48 g/cm 3 to about 2.65 g/cm 3 , from about 2.48 g/cm 3 to about 2.52 g/cm 3 , In a range from about 2.48 g/cm 3 to about 2.5 g/cm 3 or any range or sub-range therebetween. In some embodiments, the first density may be substantially equal to the second density. In some embodiments, the core density may be greater than the first density and/or the second density. In further embodiments, the core density may be about 0.005 g/cm or greater, about 0.01 g/cm or greater, about 0.015 g/cm or greater, about 0.02 g / cm or greater than the first density and/or the second density g/cm 3 or more, about 0.025 g/cm 3 or more, about 0.055 g/cm 3 or less, about 0.05 g/cm 3 or less, about 0.045 g/cm 3 or less, about 0.04 g/cm 3 or less, about 0.35 g/cm 3 or less, or about 0.3 g/cm 3 or less. In further embodiments, the core density may be greater than the first density and/or the second density by an amount from about 0.005 g/cm 3 to about 0.055 g/cm 3 , from about 0.005 g/cm 3 to about 0.05 g/cm 3 cm 3 , from about 0.01 g/cm 3 to about 0.05 g/cm 3 , from about 0.01 g/cm 3 to about 0.045 g/cm 3 , from about 0.015 g/cm 3 to about 0.045 g/cm 3 , from about 0.015 g/cm 3 to about 0.04 g/cm 3 , from about 0.02 g/cm 3 to about 0.04 g/cm 3 , from about 0.02 g/cm 3 to about 0.035 g/cm 3 , from about 0.025 g/cm 3 In one range to about 0.035 g/cm 3 , from about 0.025 g/cm 3 to about 0.03 g/cm 3 , or any range or sub-range therebetween. As discussed herein, controlling the difference between the density of the core layer relative to the first outer layer and/or the second outer layer or the central portion relative to the first portion and/or the second portion can reduce the foldable device and/or foldable Chemical strengthening between layers and/or portions of the substrate induces expansion and/or strain, which can help before the foldable device and/or foldable substrate reach critical buckling strain (eg, the onset of mechanical instability) The larger folding induced strain, and the reduction of the occurrence of optical distortion.

第一外層213可包含第一網路擴張係數,第二外層215可包含第二網路擴張係數,且核心層207可包含核心網路擴張係數。貫穿本揭露內容,網路擴張係數(例如,晶格擴張係數)指每莫耳%之鹼金屬離子的材料(例如,基於玻璃之材料、基於陶瓷之材料)之體積增大隨著鹼金屬離子交換至材料內而增大。在一些實施例中,網路擴張係數可針對以氧化物為基礎的鉀。在一些實施例中,網路擴張係數可針對以氧化物為基礎的鈉。在一些實施例中,第一網路擴張係數、第二網路擴張係數及/或核心網路擴張係數可為約300 × 10-6 /莫耳%或更大、約500 × 10-6 /莫耳%或更大、約700 × 10-6 /莫耳%或更大、約800 × 10-6 /莫耳%或更大、約900 × 10-6 /莫耳%或更大、約200 × 10-6 /莫耳%或更小、約1500 × 10-6 /莫耳%或更小、約1200 × 10-6 /莫耳%或更小、約1100 × 10-6 /莫耳%或更小或約1000 × 10-6 /莫耳%或更小。在一些實施例中,第一網路擴張係數、第二網路擴張係數及/或核心網路擴張係數可在自約300 × 10-6 /莫耳%至約2000 × 10-6 /莫耳%、自約300 × 10-6 /莫耳%至約1500 × 10-6 /莫耳%、自約500 × 10-6 /莫耳%至約1500 × 10-6 /莫耳%、自約500 × 10-6 /莫耳%至約1200 × 10-6 /莫耳%、自約700 × 10-6 /莫耳%至約1200 × 10-6 /莫耳%、自約700 × 10-6 /莫耳%至約1100 × 10-6 /莫耳%、自約800 × 10-6 /莫耳%至約1100 × 10-6 /莫耳%、自約800 × 10-6 /莫耳%至約1000 × 10-6 /莫耳%、自約900 × 10-6 /莫耳%至約1000 × 10-6 /莫耳%之一範圍或其間之任一範圍或子範圍中。在一些實施例中,第一網路擴張係數可實質上等於第二網路擴張係數。在一些實施例中,核心網路擴張係數可小於第一網路擴張係數及/或第二網路擴張係數。如以上論述,控制核心層相對於第一外層及/或第二外層或中心部分相對於第一部分及/或第二部分之網路擴張係數之間的差可減小可折疊設備及/或可折疊基板之層及/或部分之間的化學強化誘發膨脹及/或應變,此可有助於在可折疊設備及/或可折疊基板達到臨界挫曲應變(例如,機械不穩定性之開始)前的較大折疊誘發應變,以及減少光學失真之發生。The first outer layer 213 may include a first network expansion factor, the second outer layer 215 may include a second network expansion factor, and the core layer 207 may include a core network expansion factor. Throughout this disclosure, a network expansion coefficient (eg, lattice expansion coefficient) refers to the increase in volume of a material (eg, glass-based material, ceramic-based material) per mole % of alkali metal ions as the alkali metal ion increases. Exchange into the material and increase. In some embodiments, the network expansion factor may be for oxide-based potassium. In some embodiments, the network expansion coefficient may be for oxide-based sodium. In some embodiments, the first network expansion factor, the second network expansion factor, and/or the core network expansion factor may be about 300 × 10 -6 /mol% or greater, about 500 × 10 -6 / mol % or more, about 700 × 10 -6 /mol % or more, about 800 × 10 -6 /mol % or more, about 900 × 10 -6 /mol % or more, about 200 × 10 -6 /mol % or less, about 1500 × 10 -6 /mol % or less, about 1200 × 10 -6 /mol % or less, about 1100 × 10 -6 /mol % % or less or about 1000 × 10 -6 /mol% or less. In some embodiments, the first network expansion factor, the second network expansion factor, and/or the core network expansion factor may be in the range from about 300×10 −6 /mol% to about 2000×10 −6 /mol% %, from about 300 × 10 -6 /mol % to about 1500 × 10 -6 /mol %, from about 500 × 10 -6 /mol % to about 1500 × 10 -6 /mol %, from about 500 × 10 -6 /mol % to about 1200 × 10 -6 /mol %, from about 700 × 10 -6 /mol % to about 1200 × 10 -6 /mol %, from about 700 × 10 - 6 /mol % to about 1100 × 10 -6 /mol %, from about 800 × 10 -6 /mol % to about 1100 × 10 -6 /mol %, from about 800 × 10 -6 /mol % % to about 1000 x 10" 6 /mol%, in a range from about 900 x 10" 6 /mol% to about 1000 x 10" 6 /mol%, or any range or subrange therebetween. In some embodiments, the first network expansion factor may be substantially equal to the second network expansion factor. In some embodiments, the core network expansion factor may be smaller than the first network expansion factor and/or the second network expansion factor. As discussed above, controlling the difference between the network expansion coefficients of the core layer relative to the first outer layer and/or the second outer layer or the center portion relative to the first portion and/or the second portion may reduce the foldable device and/or may Chemical strengthening between layers and/or portions of the folded substrate induces expansion and/or strain, which can help to reach critical buckling strains (eg, onset of mechanical instability) in the foldable device and/or foldable substrate The larger folding before the induced strain, and reduce the occurrence of optical distortion.

如在第4圖至第5圖及第7圖中展示,可折疊基板407可包含一第一主表面403及與第一主表面403相對之一第二主表面405。如在第4圖至第5圖及第7圖中展示,第一主表面403可沿著第一平面404a延伸。第二主表面405可沿著一第二平面404b延伸。在一些實施例中,如所展示,第二平面404b可平行於第一平面404a。如在本文中使用,基板厚度411可界定於第一主表面403與第二主表面405之間,作為第一平面404a與第二平面404b之間的距離。基板厚度411可在以上參考基板厚度211論述的範圍中之一或多者內。As shown in FIGS. 4-5 and 7 , the foldable substrate 407 may include a first major surface 403 and a second major surface 405 opposite the first major surface 403 . As shown in FIGS. 4-5 and 7, the first major surface 403 may extend along the first plane 404a. The second major surface 405 may extend along a second plane 404b. In some embodiments, as shown, the second plane 404b may be parallel to the first plane 404a. As used herein, substrate thickness 411 may be defined between first major surface 403 and second major surface 405 as the distance between first plane 404a and second plane 404b. Substrate thickness 411 may be within one or more of the ranges discussed above with reference to substrate thickness 211 .

如在第4圖至第5圖及第7圖中展示,可折疊基板407可包含一第一部分421,其包含一第一表面區423及與第一表面區423相對之一第二表面區425。現將參考第4圖之可折疊設備401來描述第一部分421,同時理解除非另有敘述,否則第一部分421之此描述亦可適用於本揭露內容之任何實施例,例如,在第5圖及第7圖中圖示之可折疊設備501及701及/或可折疊基板407。如在第4圖中展示,第一部分421可包含一第一表面區423及與第一表面區423相對之一第二表面區425。在一些實施例中,如所展示,第一部分421之第二表面區425可包含一平坦表面。在另外實施例中,如所展示,第二表面區425可平行於第一表面區423。在另外實施例中,如所展示,第一主表面403可包含第一表面區423,且第二主表面405可包含第二表面區425。在另外實施例中,第一表面區423可沿著第一平面404a延伸。在另外實施例中,第二表面區425可沿著第二平面404b延伸。在一些實施例中,基板厚度411可對應於第一部分421之第一表面區423與第一部分421之第二表面區425之間的距離。在一些實施例中,基板厚度411可實質上跨第一表面區423均勻。在一些實施例中,界定於第一表面區423與第二表面區425之間的第一厚度可在以上關於基板厚度211或411論述的範圍中之一或多者內。在另外實施例中,第一厚度可包含基板厚度411。在另外實施例中,第一部分421之第一厚度可跨其對應的長度(亦即,在可折疊設備之長度105之方向106上)及/或其對應的寬度(亦即,在可折疊設備之寬度103之方向104上)在第一表面區423與第二表面區425之間實質上均勻。As shown in FIGS. 4-5 and 7, the foldable substrate 407 can include a first portion 421 that includes a first surface area 423 and a second surface area 425 opposite the first surface area 423 . The first portion 421 will now be described with reference to the foldable device 401 of Fig. 4, with the understanding that unless otherwise stated, this description of the first portion 421 may also apply to any embodiment of the present disclosure, eg, in Figs. 5 and 5 Foldable devices 501 and 701 and/or foldable substrate 407 are illustrated in FIG. 7 . As shown in FIG. 4 , the first portion 421 may include a first surface region 423 and a second surface region 425 opposite the first surface region 423 . In some embodiments, as shown, the second surface region 425 of the first portion 421 may comprise a flat surface. In further embodiments, the second surface region 425 may be parallel to the first surface region 423 as shown. In further embodiments, as shown, the first major surface 403 may include a first surface region 423 and the second major surface 405 may include a second surface region 425 . In further embodiments, the first surface region 423 may extend along the first plane 404a. In further embodiments, the second surface region 425 may extend along the second plane 404b. In some embodiments, the substrate thickness 411 may correspond to the distance between the first surface region 423 of the first portion 421 and the second surface region 425 of the first portion 421 . In some embodiments, the substrate thickness 411 may be substantially uniform across the first surface region 423 . In some embodiments, the first thickness defined between first surface region 423 and second surface region 425 may be within one or more of the ranges discussed above with respect to substrate thickness 211 or 411 . In further embodiments, the first thickness may include the substrate thickness 411 . In further embodiments, the first thickness of the first portion 421 may span its corresponding length (ie, in the direction 106 of the length 105 of the foldable device) and/or its corresponding width (ie, in the direction 106 of the foldable device) (in the direction 104 of the width 103 ) is substantially uniform between the first surface region 423 and the second surface region 425 .

如在第4圖至第5圖及第7圖中展示,可折疊基板407亦可包含一第二部分431,其包含一第三表面區433及與第三表面區433相對之一第四表面區435。現將參考第4圖之可折疊設備401來描述第二部分431,同時理解除非另有敘述,否則第二部分431之此描述亦可適用於本揭露內容之任何實施例,例如,在第5圖及第7圖中圖示之可折疊設備501及/或701及/或可折疊基板407。在一些實施例中,如所展示,第二部分431之第三表面區433可包含一平坦表面。在另外實施例中,第二部分431之第三表面區433可與第一部分421之第一表面區423在一共同平面中。在一些實施例中,如所展示,第二部分431之第四表面區435可包含一平坦表面。在另外實施例中,如所展示,第四表面區435可平行於第三表面區433。在另外實施例中,第二部分431之第四表面區435可與第一部分421之第二表面區425在一共同平面中。一第二厚度可界定於第二部分431之第三表面區433與第二部分431之第四表面區435之間。在一些實施例中,第二厚度可在以上關於基板厚度211或411論述之範圍內。在另外實施例中,第二厚度可包含基板厚度411。在另外實施例中,如所展示,第二厚度可實質上等於基板厚度411(例如,第一厚度)。在一些實施例中,第二部分431之第二厚度可在第三表面區433與第四表面區435之間實質上均勻。As shown in FIGS. 4-5 and 7, the foldable substrate 407 may also include a second portion 431 that includes a third surface area 433 and a fourth surface opposite the third surface area 433 District 435. The second portion 431 will now be described with reference to the foldable device 401 of FIG. 4, with the understanding that unless otherwise stated, this description of the second portion 431 may also apply to any embodiment of the present disclosure, for example, in Section 5 Foldable device 501 and/or 701 and/or foldable substrate 407 illustrated in Figure 7 and Figure 7 . In some embodiments, as shown, the third surface region 433 of the second portion 431 may comprise a flat surface. In further embodiments, the third surface region 433 of the second portion 431 may be in a common plane with the first surface region 423 of the first portion 421 . In some embodiments, as shown, the fourth surface region 435 of the second portion 431 may comprise a flat surface. In further embodiments, the fourth surface region 435 may be parallel to the third surface region 433 as shown. In further embodiments, the fourth surface region 435 of the second portion 431 may be in a common plane with the second surface region 425 of the first portion 421 . A second thickness may be defined between the third surface region 433 of the second portion 431 and the fourth surface region 435 of the second portion 431 . In some embodiments, the second thickness may be within the range discussed above with respect to substrate thickness 211 or 411 . In further embodiments, the second thickness may include the substrate thickness 411 . In further embodiments, as shown, the second thickness may be substantially equal to the substrate thickness 411 (eg, the first thickness). In some embodiments, the second thickness of the second portion 431 may be substantially uniform between the third surface region 433 and the fourth surface region 435 .

如在第4圖至第5圖及第7圖中展示,可折疊基板407可包含定位於第一部分421與第二部分431之間的一中心部分481。在一些實施例中,中心部分481可包含一第一中心表面區409及與第一中心表面區409相對之一第二中心表面區419。在另外實施例中,中心部分481可包含定位於第一表面區423與第三表面區433之間的第一中心表面區409。在更另外實施例中,如所展示,第一中心表面區409可自第一主表面403凹進去一第一距離417。第一距離417可在以上參考可折疊基板206針對第一距離(例如,第一外厚度217)論述的範圍中之一或多者內。在更另外實施例中,如所展示,當可折疊設備401、501及/或701在平配置中時,第一中心表面區409可沿著第三平面404c延伸,但在另外實施例中可將第一中心表面區409提供為非平坦區。第一凹座434可界定於第一中心表面區409(例如,第三平面404c)與第一平面404a之間。在另外實施例中,第三平面404c可實質上平行於第一平面404a及/或第二平面404b。As shown in FIGS. 4-5 and 7 , the foldable substrate 407 may include a central portion 481 positioned between the first portion 421 and the second portion 431 . In some embodiments, the central portion 481 may include a first central surface region 409 and a second central surface region 419 opposite the first central surface region 409 . In further embodiments, the central portion 481 may include a first central surface region 409 positioned between the first surface region 423 and the third surface region 433 . In still further embodiments, as shown, the first central surface region 409 may be recessed from the first major surface 403 a first distance 417 . The first distance 417 may be within one or more of the ranges discussed above with reference to the foldable substrate 206 for the first distance (eg, the first outer thickness 217 ). In still further embodiments, the first central surface region 409 may extend along the third plane 404c when the foldable devices 401, 501 and/or 701 are in a flat configuration as shown, but in further embodiments may The first central surface region 409 is provided as a non-planar region. The first recess 434 may be defined between the first central surface region 409 (eg, the third plane 404c) and the first plane 404a. In other embodiments, the third plane 404c may be substantially parallel to the first plane 404a and/or the second plane 404b.

在一些實施例中,中心部分481可包含定位於第二表面區425與第四表面區435之間的第二中心表面區419。在另外實施例中,如所展示,第二中心表面區419可自第二主表面405凹進去一第二距離437。第二距離437可在以上參考可折疊基板206針對第二距離(例如,第二外厚度237)論述的範圍中之一或多者內。在更另外實施例中,如所展示,當可折疊設備401、501及/或701在平配置中時,第二中心表面區419可沿著第四平面404d延伸,但在另外實施例中可將第二中心表面區419提供為非平坦區。第二凹座444可界定於第二中心表面區419(例如,第四平面404d)與第二平面404b之間。如上論述,提供實質上等於第二中心表面區自第二主表面凹進去之第二距離的第一中心表面區自第一主表面凹進去之第一距離可減少在中心部分中發生機械不穩定性,例如,因為可折疊基板圍繞包含基板厚度及中心厚度中之中點的一平面對稱。In some embodiments, central portion 481 may include second central surface region 419 positioned between second surface region 425 and fourth surface region 435 . In further embodiments, as shown, the second central surface region 419 may be recessed a second distance 437 from the second major surface 405 . The second distance 437 may be within one or more of the ranges discussed above with reference to the foldable substrate 206 for the second distance (eg, the second outer thickness 237 ). In still further embodiments, the second central surface region 419 may extend along the fourth plane 404d when the foldable devices 401, 501 and/or 701 are in a flat configuration as shown, but in further embodiments may The second central surface region 419 is provided as a non-planar region. The second recess 444 may be defined between the second central surface region 419 (eg, the fourth plane 404d) and the second plane 404b. As discussed above, providing a first distance that the first central surface region is recessed from the first major surface that is substantially equal to a second distance that the second central surface region is recessed from the second major surface can reduce the occurrence of mechanical instability in the central portion , for example, because the foldable substrate is symmetric about a plane containing the midpoint between the thickness of the substrate and the thickness of the center.

一中心厚度427可界定於第一中心表面區409與第二中心表面區419之間,可將該厚度作為第三平面404c與第四平面404d之間的距離量測。在一些實施例中,中心厚度427可在以上針對可折疊基板206之中心厚度227論述的範圍中之一或多者內。在一些實施例中,作為基板厚度411之一百分比的中心厚度427可在以上針對作為可折疊基板206之基板厚度211之一百分比的中心厚度227論述的範圍中之一或多者內。藉由提供平行於沿著第四平面404d延伸的中心部分481之第二中心表面區419的沿著第三平面404c延伸的中心部分481之第一中心表面區409,均勻中心厚度427可跨中心部分481延伸,此可提供在中心厚度427之預定厚度處的增強之折疊效能。藉由防止在中心部分481之一部分比中心部分481之其餘處薄之情況下會發生之應力集中,跨中心部分481之均勻中心厚度427可改良折疊效能。A central thickness 427 can be defined between the first central surface region 409 and the second central surface region 419, and this thickness can be measured as the distance between the third plane 404c and the fourth plane 404d. In some embodiments, the center thickness 427 may be within one or more of the ranges discussed above for the center thickness 227 of the foldable substrate 206 . In some embodiments, the center thickness 427 as a percentage of the substrate thickness 411 may be within one or more of the ranges discussed above for the center thickness 227 as a percentage of the substrate thickness 211 of the foldable substrate 206 . By providing a first central surface region 409 of the central portion 481 extending along the third plane 404c parallel to the second central surface region 419 of the central portion 481 extending along the fourth plane 404d, the uniform central thickness 427 can span the center Portion 481 extends, which can provide enhanced folding performance at a predetermined thickness of center thickness 427 . Uniform center thickness 427 across center portion 481 may improve folding performance by preventing stress concentrations that would occur if one portion of center portion 481 were thinner than the rest of center portion 481 .

在一些實施例中,如在第4圖至第5圖中展示,第一中心表面區409與第一表面區423及/或第三表面區433之間的過渡可實質上突然(例如,足夠窄以類似於垂直於第一平面404a及/或第三平面404c之直邊)。在一些實施例中,如在第4圖至第5圖中展示,第二中心表面區419與第二表面區425及/或第四表面區435之間的過渡可實質上突然(例如,足夠窄以類似於垂直於第二平面404b及/或第四平面404d之直邊)。在一些實施例中,雖未展示,但可折疊基板407可包含在第一表面區與第一中心表面之間及/或第二表面區與第二中心表面區之間的第一過渡,其可例如類似於第8圖中之第一過渡部分853。在一些實施例中,雖未展示,但可折疊基板407可包含在第三表面區與第一中心表面之間及/或第四表面區與第二中心表面區之間的第二過渡,其可例如類似於第8圖中之第二過渡部分855。In some embodiments, as shown in Figures 4-5, the transition between the first central surface region 409 and the first surface region 423 and/or the third surface region 433 may be substantially abrupt (eg, sufficient narrow to resemble a straight edge perpendicular to the first plane 404a and/or the third plane 404c). In some embodiments, as shown in FIGS. 4-5, the transition between the second central surface region 419 and the second surface region 425 and/or the fourth surface region 435 may be substantially abrupt (eg, sufficient narrow to resemble a straight edge perpendicular to the second plane 404b and/or the fourth plane 404d). In some embodiments, although not shown, the foldable substrate 407 can include a first transition between the first surface region and the first central surface and/or between the second surface region and the second central surface region, which It may be similar to the first transition portion 853 in FIG. 8, for example. In some embodiments, although not shown, the foldable substrate 407 can include a second transition between the third surface region and the first central surface and/or between the fourth surface region and the second central surface region, which It may be similar to the second transition portion 855 in FIG. 8, for example.

在一些實施例中,如在第7圖中展示,可折疊設備701可包含一可折疊基板707,其可包含與可折疊基板407之對應部分類似或相同的第一部分421及/或第二部分431。在一些實施例中,可折疊基板707可包含定位於第一部分421與包含第三平面404c的中心部分781之一部分(例如,第一中心表面區709)之間的一第一過渡部分753。在另外實施例中,第一過渡部分753包含第一過渡部分之厚度連續改變的自第一部分421延伸的第一過渡部分753之一部分,及可突然改變的自第三平面404c延伸的一部分。在更另外實施例中,突然改變之過渡深度727可為約1 μm或更大、約5 μm或更大、約10 μm或更大、約12 μm或更大、約50 μm或更小、約30 μm或更小、約25 μm或更小、約20 μm或更小、約18 μm或更小或約15 μm或更小。在更另外實施例中,突然改變之過渡深度727可在自約1 µm至約50 µm、自約1 µm至約30 µm、自約2 µm至約30 µm、自約2 µm至約25 µm、自約5 µm至約25 µm、自約5 µm至約20 µm、自約10 µm至約20 µm、自約10 µm至約18 µm、自約12 µm至約18 µm、自約12 µm至約15 µm之一範圍或其間之任一範圍或子範圍中。在一些實施例中,如在第7圖中展示,可折疊基板707可包含定位於第二部分431與包含第三平面404c的中心部分781之一部分(例如,第一中心表面區709)之間的一第二過渡部分755。在另外實施例中,第二過渡部分755包含第二過渡部分之厚度連續改變的自第二部分431延伸的第二過渡部分755之一部分,及可突然改變的自第三平面404c延伸的一部分。在更另外實施例中,第二過渡部分的突然改變之一過渡深度727可在以上針對第一過渡部分的突然改變之過渡深度727論述的範圍中之一或多者內。在更另外實施例中,第二過渡部分的突然改變之一過渡深度727可實質上等於第一過渡部分的突然改變之過渡深度727。In some embodiments, as shown in FIG. 7 , foldable device 701 can include a foldable substrate 707 that can include a first portion 421 and/or a second portion that are similar or identical to corresponding portions of foldable substrate 407 431. In some embodiments, the foldable substrate 707 may include a first transition portion 753 positioned between the first portion 421 and a portion of the central portion 781 including the third plane 404c (eg, the first central surface region 709). In another embodiment, the first transition portion 753 includes a portion of the first transition portion 753 extending from the first portion 421 with a continuously varying thickness of the first transition portion and a portion extending from the third plane 404c that can change abruptly. In still further embodiments, the abruptly changed transition depth 727 may be about 1 μm or more, about 5 μm or more, about 10 μm or more, about 12 μm or more, about 50 μm or less, About 30 μm or less, about 25 μm or less, about 20 μm or less, about 18 μm or less, or about 15 μm or less. In still further embodiments, the abruptly changed transition depth 727 may range from about 1 μm to about 50 μm, from about 1 μm to about 30 μm, from about 2 μm to about 30 μm, from about 2 μm to about 25 μm , from about 5 µm to about 25 µm, from about 5 µm to about 20 µm, from about 10 µm to about 20 µm, from about 10 µm to about 18 µm, from about 12 µm to about 18 µm, from about 12 µm in a range to about 15 µm or any range or sub-range therebetween. In some embodiments, as shown in Figure 7, the foldable substrate 707 can include a portion (eg, the first central surface region 709) positioned between the second portion 431 and a central portion 781 that includes the third plane 404c a second transition portion 755. In another embodiment, the second transition portion 755 includes a portion of the second transition portion 755 extending from the second portion 431 with a continuously varying thickness of the second transition portion and a portion extending from the third plane 404c that can change abruptly. In still further embodiments, a transition depth 727 of the abrupt change of the second transition portion may be within one or more of the ranges discussed above for the abrupt change of the transition depth 727 of the first transition portion. In still further embodiments, a transition depth 727 of the abrupt change of the second transition portion may be substantially equal to the transition depth 727 of the abrupt change of the first transition portion.

如在第8圖中展示,可折疊設備801可包含可折疊基板807。該可折疊基板可包含一第一主表面803及與第一主表面803相對之一第二主表面805。如在第8圖中展示,第一主表面803可沿著第一平面804a延伸。第二主表面805可沿著一第二平面804b延伸。在一些實施例中,如所展示,第二平面804b可平行於第一平面404a。如在本文中使用,基板厚度811可界定於第一主表面803與第二主表面805之間,作為第一平面804a與第二平面804b之間的距離。基板厚度811可在以上參考基板厚度211或411論述的範圍中之一或多者內。As shown in FIG. 8 , foldable device 801 may include a foldable substrate 807 . The foldable substrate may include a first main surface 803 and a second main surface 805 opposite the first main surface 803 . As shown in Figure 8, the first major surface 803 may extend along a first plane 804a. The second major surface 805 may extend along a second plane 804b. In some embodiments, as shown, the second plane 804b may be parallel to the first plane 404a. As used herein, substrate thickness 811 may be defined between first major surface 803 and second major surface 805 as the distance between first plane 804a and second plane 804b. Substrate thickness 811 may be within one or more of the ranges discussed above with reference to substrate thickness 211 or 411 .

如在第8圖中展示,可折疊基板807可包含一第一部分821,其包含一第一表面區823及與第一表面區823相對之一第二表面區825。在一些實施例中,如所展示,第一部分821之第二表面區825可包含一平坦表面。在另外實施例中,如所展示,第二表面區825可平行於第一表面區823。在另外實施例中,如所展示,第一主表面803可包含第一表面區823,且第二主表面805可包含第二表面區825。在另外實施例中,第一表面區823可沿著第一平面804a延伸。在另外實施例中,第二表面區825可沿著第二平面804b延伸。在一些實施例中,基板厚度811可對應於第一部分821之第一表面區823與第一部分821之第二表面區825之間的距離。在一些實施例中,基板厚度811可實質上跨第一表面區823均勻。在一些實施例中,界定於第一表面區823與第二表面區825之間的第一厚度可在以上關於基板厚度211、411或811論述的範圍中之一或多者內。在另外實施例中,第一厚度可包含基板厚度811。在另外實施例中,第一部分821之第一厚度可跨其對應的長度(亦即,在可折疊設備之長度105之方向106上)及/或其對應的寬度(亦即,在可折疊設備之寬度103之方向104上)在第一表面區823與第二表面區825之間實質上均勻。As shown in FIG. 8 , the foldable substrate 807 can include a first portion 821 that includes a first surface area 823 and a second surface area 825 opposite the first surface area 823 . In some embodiments, as shown, the second surface region 825 of the first portion 821 may comprise a flat surface. In further embodiments, the second surface region 825 may be parallel to the first surface region 823 as shown. In further embodiments, the first major surface 803 may include a first surface region 823 and the second major surface 805 may include a second surface region 825, as shown. In further embodiments, the first surface region 823 may extend along the first plane 804a. In further embodiments, the second surface region 825 may extend along the second plane 804b. In some embodiments, the substrate thickness 811 may correspond to the distance between the first surface region 823 of the first portion 821 and the second surface region 825 of the first portion 821 . In some embodiments, the substrate thickness 811 may be substantially uniform across the first surface region 823 . In some embodiments, the first thickness defined between the first surface region 823 and the second surface region 825 may be within one or more of the ranges discussed above with respect to substrate thicknesses 211 , 411 or 811 . In further embodiments, the first thickness may include the substrate thickness 811 . In further embodiments, the first thickness of the first portion 821 may span its corresponding length (ie, in the direction 106 of the length 105 of the foldable device) and/or its corresponding width (ie, in the direction 106 of the foldable device) (in the direction 104 of the width 103 ) is substantially uniform between the first surface region 823 and the second surface region 825 .

如在第8圖中展示,可折疊基板807亦可包含一第二部分831,其包含一第三表面區833及與第三表面區833相對之一第四表面區835。在一些實施例中,如所展示,第二部分831之第三表面區833可包含一平坦表面。在另外實施例中,第二部分831之第三表面區833可與第一部分821之第一表面區823在一共同平面中。在一些實施例中,如所展示,第二部分831之第四表面區835可包含一平坦表面。在另外實施例中,如所展示,第四表面區835可平行於第三表面區833。在另外實施例中,第二部分831之第四表面區835可與第一部分821之第二表面區825在一共同平面中。一第二厚度可界定於第二部分831之第三表面區833與第二部分831之第四表面區835之間。在一些實施例中,第二厚度可在以上關於基板厚度211、411或811論述之範圍內。在另外實施例中,第二厚度可包含基板厚度811。在另外實施例中,如所展示,第二厚度可實質上等於基板厚度811(例如,第一厚度)。在一些實施例中,第二部分831之第二厚度可在第三表面區833與第四表面區835之間實質上均勻。As shown in FIG. 8 , the foldable substrate 807 may also include a second portion 831 that includes a third surface area 833 and a fourth surface area 835 opposite the third surface area 833 . In some embodiments, as shown, the third surface region 833 of the second portion 831 may comprise a flat surface. In further embodiments, the third surface region 833 of the second portion 831 may be in a common plane with the first surface region 823 of the first portion 821 . In some embodiments, as shown, the fourth surface region 835 of the second portion 831 may comprise a flat surface. In further embodiments, the fourth surface region 835 may be parallel to the third surface region 833 as shown. In further embodiments, the fourth surface region 835 of the second portion 831 may be in a common plane with the second surface region 825 of the first portion 821 . A second thickness may be defined between the third surface region 833 of the second portion 831 and the fourth surface region 835 of the second portion 831 . In some embodiments, the second thickness may be within the range discussed above with respect to substrate thickness 211 , 411 or 811 . In further embodiments, the second thickness may include the substrate thickness 811 . In further embodiments, as shown, the second thickness may be substantially equal to the substrate thickness 811 (eg, the first thickness). In some embodiments, the second thickness of the second portion 831 may be substantially uniform between the third surface region 833 and the fourth surface region 835 .

如在第8圖中展示,可折疊基板807可包含定位於第一部分821與第二部分831之間的一中心部分881。在一些實施例中,中心部分881可包含一第一中心表面區809及與第一中心表面區809相對之一第二中心表面區819。在另外實施例中,中心部分881可包含定位於第一表面區823與第三表面區833之間的第一中心表面區809。在更另外實施例中,如所展示,第一中心表面區809可自第一主表面803凹進去一第一距離817。第一距離817可在以上參考可折疊基板206針對第一距離(例如,第一外厚度217)論述的範圍中之一或多者內。在更另外實施例中,如所展示,當可折疊設備801在平配置中時,第一中心表面區809可沿著第三平面804c延伸,但在另外實施例中可將第一中心表面區809提供為非平坦區。第一凹座834可界定於第一中心表面區809(例如,第三平面804c)與第一平面804a之間。在另外實施例中,第三平面804c可實質上平行於第一平面804a及/或第二平面804b。在另外實施例中,中心部分881可包含定位於第二表面區825與第四表面區835之間的第二中心表面區819。在更另外實施例中,如所展示,第二主表面805可包含第二中心表面區819。在更另外實施例中,雖未展示,但第二中心表面區之一部分可自第二平面凹進。在更另外實施例中,雖未展示,但該可折疊基板可包含在可折疊基板之第二主表面中的另一凹座,其暴露第二中心表面區。As shown in FIG. 8 , the foldable substrate 807 can include a central portion 881 positioned between the first portion 821 and the second portion 831 . In some embodiments, the central portion 881 may include a first central surface region 809 and a second central surface region 819 opposite the first central surface region 809 . In further embodiments, the central portion 881 may include a first central surface region 809 positioned between the first surface region 823 and the third surface region 833 . In still further embodiments, as shown, the first central surface region 809 may be recessed from the first major surface 803 a first distance 817 . The first distance 817 may be within one or more of the ranges discussed above with reference to the foldable substrate 206 for the first distance (eg, the first outer thickness 217 ). In still further embodiments, the first central surface area 809 may extend along the third plane 804c when the foldable device 801 is in the flat configuration as shown, but in further embodiments the first central surface area may be 809 is provided as a non-flat area. The first recess 834 may be defined between the first central surface region 809 (eg, the third plane 804c) and the first plane 804a. In other embodiments, the third plane 804c may be substantially parallel to the first plane 804a and/or the second plane 804b. In further embodiments, the central portion 881 may include a second central surface region 819 positioned between the second surface region 825 and the fourth surface region 835 . In still further embodiments, the second major surface 805 may include a second central surface region 819 as shown. In still further embodiments, although not shown, a portion of the second central surface region may be recessed from the second plane. In still further embodiments, although not shown, the foldable substrate may include another recess in the second major surface of the foldable substrate that exposes the second central surface area.

中心部分881之中心厚度827可界定於該第一中心表面區809與該第二中心表面區819之間。在一些實施例中,當可折疊設備801在平配置中時,第一中心表面區809可沿著第三平面804c延伸,但在另外實施例中可將第一中心表面區809提供為非平坦區。在另外實施例中,第三平面804c可實質上平行於第一平面804a及/或第二平面804b。在一些實施例中,中心厚度827可在以上針對可折疊基板206之中心厚度227論述的範圍中之一或多者內。在一些實施例中,作為基板厚度811之一百分比的中心厚度827可在以上針對作為可折疊基板206之基板厚度211之一百分比的中心厚度227論述的範圍中之一或多者內。藉由提供沿著平行於第二平面804b之第三平面804c延伸的中心部分881之第一中心表面區809,均勻中心厚度827可跨中心部分881延伸,此可提供在中心厚度827之預定厚度處的增強之折疊效能。藉由防止在中心部分881之一部分比中心部分881之其餘處薄之情況下會發生之應力集中,跨中心部分881之均勻中心厚度827可改良折疊效能。A central thickness 827 of central portion 881 may be defined between the first central surface region 809 and the second central surface region 819 . In some embodiments, the first central surface area 809 may extend along the third plane 804c when the foldable device 801 is in a flat configuration, but in other embodiments the first central surface area 809 may be provided as non-planar Area. In other embodiments, the third plane 804c may be substantially parallel to the first plane 804a and/or the second plane 804b. In some embodiments, the center thickness 827 may be within one or more of the ranges discussed above for the center thickness 227 of the foldable substrate 206 . In some embodiments, center thickness 827 as a percentage of substrate thickness 811 may be within one or more of the ranges discussed above for center thickness 227 as a percentage of substrate thickness 211 of foldable substrate 206 . Uniform center thickness 827 may extend across center portion 881 by providing first central surface region 809 along center portion 881 extending parallel to third plane 804c of second plane 804b, which may provide a predetermined thickness at center thickness 827 Enhanced folding performance at Uniform center thickness 827 across center portion 881 may improve folding performance by preventing stress concentrations that would occur if one portion of center portion 881 were thinner than the rest of center portion 881 .

如在第8圖中展示,中心部分881可包含一第一過渡部分853。第一過渡部分853可將第一部分821附接至包含中心厚度827的中心部分881之一區域。第一過渡部分853之厚度可界定於第二平面804b與第一中心表面區809之間。如在第8圖中展示,第一過渡部分853之厚度可自第一中心表面區809(例如,中心厚度827)至第一部分821(例如,基板厚度811)連續增大。在一些實施例中,如所展示,第一過渡部分853之厚度可自第一中心表面區809至第一部分821按恆定速率增大。在一些實施例中,雖未展示,但在第一中心表面區809與第一過渡部分853交匯之處,第一過渡部分853之厚度可比在第一過渡部分853之中間緩慢地增大。在一些實施例中,雖未展示,但在第一部分821與第一過渡部分853交匯之處,第一過渡部分853之厚度可比在第一過渡部分853之中間緩慢地增大。在一些實施例中,雖未在第8圖中展示,但中心部分可類似於可不包含第一過渡部分的第4圖之中心部分481。在一些實施例中,雖未展示,但第一過渡部分853可自第二表面區過渡至第二中心表面區,例如,若第二中心表面區自第二平面凹進去。在一些實施例中,雖未展示,但第一過渡部分可包含第一過渡部分之一厚度連續地改變之自第一部分延伸之一部分及自第三平面804c延伸之厚度可突然地改變之一部分(例如,見第7圖)。As shown in FIG. 8 , the central portion 881 may include a first transition portion 853 . The first transition portion 853 may attach the first portion 821 to an area of the central portion 881 that includes the central thickness 827 . The thickness of the first transition portion 853 may be defined between the second plane 804b and the first central surface region 809 . As shown in Figure 8, the thickness of the first transition portion 853 may increase continuously from the first central surface region 809 (eg, central thickness 827) to the first portion 821 (eg, substrate thickness 811). In some embodiments, as shown, the thickness of the first transition portion 853 may increase at a constant rate from the first central surface region 809 to the first portion 821 . In some embodiments, although not shown, where the first central surface region 809 meets the first transition portion 853 , the thickness of the first transition portion 853 may increase more slowly than in the middle of the first transition portion 853 . In some embodiments, although not shown, where the first portion 821 and the first transition portion 853 meet, the thickness of the first transition portion 853 may increase more slowly than in the middle of the first transition portion 853 . In some embodiments, although not shown in Figure 8, the central portion may be similar to the central portion 481 of Figure 4, which may not include the first transition portion. In some embodiments, although not shown, the first transition portion 853 may transition from the second surface region to the second central surface region, eg, if the second central surface region is recessed from the second plane. In some embodiments, although not shown, the first transition portion may include a portion extending from the first portion where a thickness of the first transition portion continuously changes and a portion extending from the third plane 804c that may change abruptly in thickness ( For example, see Figure 7).

中心部分881可包含一第二過渡部分855。如在第8圖中展示,第二過渡部分855可將第二部分831附接至包含中心厚度827的中心部分881之一區域(例如,包含第一中心表面區809之區域)。第二過渡部分855之厚度可界定於第二平面804b與第一中心表面區809之間。如在第8圖中展示,第二過渡部分855之厚度可自第一中心表面區809(例如,中心厚度827)至第二部分831(例如,基板厚度811)連續增大。在一些實施例中,如所展示,第二過渡部分855之厚度可自第一中心表面區809至第二部分831按恆定速率增大。在一些實施例中,雖未展示,但在第一中心表面區809與第二過渡部分855交匯之處,第二過渡部分855之厚度可比在第二過渡部分855之中間緩慢地增大。在一些實施例中,雖未展示,但在第二部分831與第二過渡部分855交匯之處,第二過渡部分855之厚度可比在第二過渡部分855之中間緩慢地增大。在一些實施例中,如在第8圖中展示,中心部分881可包含一第二過渡部分。在一些實施例中,雖未在第8圖中展示,但中心部分可類似於可不包含第二過渡部分的第4圖之中心部分481。在一些實施例中,雖未展示,但第二過渡部分855可自第四表面區過渡至第二中心表面區,例如,若第二中心表面區自第二平面凹進去。在一些實施例中,雖未展示,但第二過渡部分可包含第二過渡部分之一厚度連續地改變之自第二部分延伸之一部分及自第三平面804c延伸之厚度可突然地改變之一部分,例如,類似於在第7圖中展示之情況。The central portion 881 may include a second transition portion 855 . As shown in FIG. 8 , the second transition portion 855 may attach the second portion 831 to an area of the central portion 881 that includes the central thickness 827 (eg, the area that includes the first central surface region 809 ). The thickness of the second transition portion 855 may be defined between the second plane 804b and the first central surface region 809 . As shown in Figure 8, the thickness of the second transition portion 855 may increase continuously from the first central surface region 809 (eg, central thickness 827) to the second portion 831 (eg, substrate thickness 811). In some embodiments, as shown, the thickness of the second transition portion 855 may increase at a constant rate from the first central surface region 809 to the second portion 831 . In some embodiments, although not shown, where the first central surface region 809 meets the second transition portion 855 , the thickness of the second transition portion 855 may increase more slowly than in the middle of the second transition portion 855 . In some embodiments, although not shown, where the second portion 831 and the second transition portion 855 meet, the thickness of the second transition portion 855 may increase more slowly than in the middle of the second transition portion 855 . In some embodiments, as shown in FIG. 8, the central portion 881 may include a second transition portion. In some embodiments, although not shown in Figure 8, the central portion may be similar to the central portion 481 of Figure 4, which may not include the second transition portion. In some embodiments, although not shown, the second transition portion 855 may transition from the fourth surface region to the second central surface region, eg, if the second central surface region is recessed from the second plane. In some embodiments, although not shown, the second transition portion may include a portion extending from the second portion in which a thickness of the second transition portion continuously changes and a portion extending from the third plane 804c that may change abruptly in thickness , for example, similar to that shown in Figure 7.

如在第8圖中展示,第一過渡部分853之寬度可界定於在可折疊設備801之長度105之方向106上在包含中心厚度827的中心部分881之一部分(例如,第三平面804c)與第一部分821之間。第二過渡部分855之寬度可界定於在可折疊設備101之長度105之方向106上在包含中心厚度827的中心部分881之一部分(例如,第三平面804c)與第二部分831之間。在一些實施例中,第一過渡部分853之寬度及/或第二過渡部分855之寬度可足夠大(例如,1 mm或更大)以避免可另原本在第一厚度與中心厚度之間的階式過渡或小過渡寬度(例如,小於1 mm)處發生的光學失真。在一些實施例中,為了增強可折疊基板之抗刺紮性,同時亦避免光學失真,第一過渡部分853之寬度及/或第二過渡部分855之寬度可為約1 mm或更大、約2 mm或更大、約3 mm或更大、約5 mm或更小、約4 mm或更小或約3 mm或更小。在一些實施例中,第一過渡部分853之寬度及/或第二過渡部分855之寬度可在自約1 mm至約5 mm、自約1 mm至約4 mm、自約1 mm至約3 mm、自約2 mm至約5 mm、自約2 mm至約4 mm、自約2 mm至約3 mm、自約3 mm至約5 mm、自約3 mm至約4 mm之一範圍或其間之任一範圍或子範圍中。As shown in FIG. 8, the width of the first transition portion 853 may be defined in the direction 106 of the length 105 of the foldable device 801 at a portion of the center portion 881 including the center thickness 827 (eg, the third plane 804c) and the Between the first part 821. The width of second transition portion 855 may be defined between a portion of central portion 881 including central thickness 827 (eg, third plane 804c ) and second portion 831 in direction 106 of length 105 of foldable device 101 . In some embodiments, the width of the first transition portion 853 and/or the width of the second transition portion 855 may be large enough (eg, 1 mm or greater) to avoid any additional thicknesses that may otherwise be between the first thickness and the center thickness. Optical distortion that occurs at stepped transitions or at small transition widths (eg, less than 1 mm). In some embodiments, in order to enhance the puncture resistance of the foldable substrate while avoiding optical distortion, the width of the first transition portion 853 and/or the width of the second transition portion 855 may be about 1 mm or more, about 2 mm or more, about 3 mm or more, about 5 mm or less, about 4 mm or less, or about 3 mm or less. In some embodiments, the width of the first transition portion 853 and/or the width of the second transition portion 855 may range from about 1 mm to about 5 mm, from about 1 mm to about 4 mm, from about 1 mm to about 3 mm mm, from about 2 mm to about 5 mm, from about 2 mm to about 4 mm, from about 2 mm to about 3 mm, from about 3 mm to about 5 mm, from about 3 mm to about 4 mm, or in any range or subrange in between.

如本文中使用,若將一第一層及/或組件描述為「安置於一第二層及/或組件上」,則在第一層及/或組件與第二層及/或組件之間可或可不存在其他層。此外,如本文中使用,「安置於……上」不指參考重力之相對位置。舉例而言,可將一第一層及/或組件視為「安置於一第二層及/或組件上」,例如,當該第一層及/或組件定位於第二層及/或組件下、上方或一邊時。如本文中使用,描述為「結合至」第二層及/或組件之第一層及/或組件意謂該等層及/或組件藉由兩個層及/或組件之間的直接接觸及/或結合或經由黏著層相互結合。如本文中使用,描述為「接觸第二層及/或組件」或「與第二層及/或組件接觸」之第一層及/或組件指直接接觸,且包括該等層及/或組件相互結合之情形。As used herein, if a first layer and/or component is described as being "disposed on a second layer and/or component," it is between the first layer and/or component and the second layer and/or component Other layers may or may not be present. Furthermore, as used herein, "positioned on" does not refer to a relative position with reference to gravity. For example, a first layer and/or component may be considered "disposed on a second layer and/or component," eg, when the first layer and/or component is positioned on a second layer and/or component down, above, or to one side. As used herein, a first layer and/or component described as "bonded to" a second layer and/or component means that the layers and/or components are in direct contact and/or by direct contact between the two layers and/or components. /or bonded or bonded to each other via an adhesive layer. As used herein, a first layer and/or component described as "in contact with the second layer and/or component" or "in contact with the second layer and/or component" refers to direct contact and includes such layers and/or components situation of mutual combination.

如在第2圖至第5圖及第12圖中展示,可折疊設備101、301、401、501及/或1201可包含一黏著層261。如所展示,黏著層261可包含一第一接觸表面263及可與第一接觸表面263相對之一第二接觸表面265。在一些實施例中,如在第2圖至第5圖中展示,黏著層261之第二接觸表面265可包含一平坦表面。在一些實施例中,如在第2圖及第5圖中展示,黏著層261之第一接觸表面263可包含一平坦表面。可將黏著層261之黏著劑厚度267定義為第一接觸表面263與第二接觸表面265之間的最小距離。在一些實施例中,黏著層261之黏著劑厚度267可為約1 μm或更大、約5 μm或更大、約10 μm或更大、約100 μm或更小、約60 μm或更小、約30 μm或更小或約20 μm或更小。在一些實施例中,黏著層261之黏著劑厚度267可在自約1 µm至約100 µm、自約5 µm至約100 µm、自約5 µm至約60 µm、自約5 µm至約30 µm、自約10 µm至約30 µm、自約10 µm至約20 µm之一範圍或其間之任一範圍或子範圍中。As shown in FIGS. 2-5 and 12, foldable devices 101 , 301 , 401 , 501 and/or 1201 may include an adhesive layer 261 . As shown, the adhesion layer 261 can include a first contact surface 263 and a second contact surface 265 that can be opposite the first contact surface 263 . In some embodiments, as shown in FIGS. 2-5, the second contact surface 265 of the adhesive layer 261 may comprise a flat surface. In some embodiments, as shown in FIGS. 2 and 5, the first contact surface 263 of the adhesive layer 261 may comprise a flat surface. The adhesive thickness 267 of the adhesive layer 261 can be defined as the minimum distance between the first contact surface 263 and the second contact surface 265 . In some embodiments, the adhesive thickness 267 of the adhesive layer 261 may be about 1 μm or more, about 5 μm or more, about 10 μm or more, about 100 μm or less, about 60 μm or less , about 30 μm or less, or about 20 μm or less. In some embodiments, the adhesive thickness 267 of the adhesive layer 261 may range from about 1 μm to about 100 μm, from about 5 μm to about 100 μm, from about 5 μm to about 60 μm, from about 5 μm to about 30 μm µm, one of the range from about 10 µm to about 30 µm, from about 10 µm to about 20 µm, or any range or sub-range therebetween.

在一些實施例中,如在第2圖及第4圖中展示,黏著層261之第二接觸表面265可面向離型襯裡271(以下描述)之第一主表面273。在另外實施例中,如所展示,黏著層261之第二接觸表面265可接觸離型襯裡271之第一主表面273。在一些實施例中,如在第3圖、第5圖及第12圖中展示,黏著層261之第二接觸表面265可面向顯示裝置307之第一主表面303。在另外實施例中,如所展示,黏著層261之第二接觸表面265可接觸顯示裝置307之第一主表面303。In some embodiments, as shown in Figures 2 and 4, the second contact surface 265 of the adhesive layer 261 may face the first major surface 273 of the release liner 271 (described below). In further embodiments, as shown, the second contact surface 265 of the adhesive layer 261 may contact the first major surface 273 of the release liner 271 . In some embodiments, as shown in FIGS. 3 , 5 and 12 , the second contact surface 265 of the adhesive layer 261 may face the first main surface 303 of the display device 307 . In further embodiments, as shown, the second contact surface 265 of the adhesive layer 261 may contact the first major surface 303 of the display device 307 .

在一些實施例中,如在第2圖至第5圖及第12圖中展示,黏著層261之第一接觸表面263可面向第一部分221或421之第二表面區225或425。在另外實施例中,如所展示,黏著層261之第一接觸表面263可接觸第一部分221或421之第二表面區225或425。在一些實施例中,如在第2圖至第5圖及第12圖中展示,黏著層261之第一接觸表面263可面向第二部分231或431之第四表面區235或435。在另外實施例中,如所展示,黏著層261之第一接觸表面263可接觸第二部分231或431之第四表面區235或435。在一些實施例中,如在第2圖至第5圖及第12圖中展示,黏著層261之第一接觸表面263可面向中央部分281或481之第二中心表面區219或419。在另外實施例中,如在第3圖至第4圖中展示,黏著層261之第一接觸表面263可接觸中央部分281或481之第二中心表面區219或419。在另外實施例中,如在第3圖至第4圖中展示,黏著層261可延伸至第二凹座244或444內。在一些實施例中,雖未展示,但第二凹座可未完全填充,例如,以為電子裝置及/或機械裝置留出空間。在一些實施例中,雖未展示,但另一黏著層(例如,類似於黏著層261)可安置於第一主表面(例如,第一表面區、第三表面區)上及/或接觸該第一主表面,及/或延伸至第一凹座內,但第一凹座可未完全填充,例如,以為電子裝置及/或機械裝置留出空間。In some embodiments, as shown in FIGS. 2-5 and 12 , the first contact surface 263 of the adhesive layer 261 may face the second surface region 225 or 425 of the first portion 221 or 421 . In further embodiments, as shown, the first contact surface 263 of the adhesive layer 261 may contact the second surface region 225 or 425 of the first portion 221 or 421 . In some embodiments, as shown in FIGS. 2-5 and 12 , the first contact surface 263 of the adhesive layer 261 may face the fourth surface region 235 or 435 of the second portion 231 or 431 . In further embodiments, as shown, the first contact surface 263 of the adhesive layer 261 may contact the fourth surface region 235 or 435 of the second portion 231 or 431 . In some embodiments, as shown in FIGS. 2-5 and 12 , the first contact surface 263 of the adhesive layer 261 may face the second central surface region 219 or 419 of the central portion 281 or 481 . In further embodiments, as shown in FIGS. 3-4 , the first contact surface 263 of the adhesive layer 261 may contact the second central surface region 219 or 419 of the central portion 281 or 481 . In other embodiments, as shown in FIGS. 3-4 , the adhesive layer 261 may extend into the second recess 244 or 444 . In some embodiments, although not shown, the second recess may not be fully filled, eg, to make room for electronic and/or mechanical devices. In some embodiments, although not shown, another adhesive layer (eg, similar to adhesive layer 261 ) may be disposed on and/or contact the first major surface (eg, first surface region, third surface region) The first major surface, and/or extends into the first recess, but the first recess may not be fully filled, eg, to make room for electronic and/or mechanical devices.

在一些實施例中,黏著層261可包含聚烯烴、聚醯胺、含鹵素聚合物(例如,聚氯乙烯或含氟聚合物)、彈性體、胺甲酸乙酯、酚醛樹脂、聚對二甲苯、聚對苯二甲酸乙二酯(polyethylene terephthalate;PET)及聚醚醚酮(polyether ether ketone;PEEK)中之一或多者。聚烯烴之實例實施例包括低分子量聚乙烯(low molecular weight polyethylene;LDPE)、高分子量聚乙烯(high molecular weight polyethylene;HDPE)、超高分子量聚乙烯(ultrahigh molecular weight polyethylene;UHMWPE)及聚丙烯(polypropylene;PP)。含氟聚合物之實例實施例包括聚四氟乙烯(polytetrafluoroethylene;PTFE)、聚氟乙烯(polyvinylfluoride;PVF)、聚偏二氟乙烯(polyvinylidene fluoride;PVDF)、全氟丙醚(perfluoropolyether;PFPE)、全氟磺酸(perfluorosulfonic acid;PFSA)、全氟烷氧基(perfluoroalkoxy;PFA)、氟化乙烯丙烯(fluorinated ethylene propylene;FEP)聚合物及乙烯四氟乙烯(ethylene tetrafluoro ethylene;ETFE)聚合物。彈性體之實例實施例包括橡膠(例如,聚丁二烯、聚異戊二烯、氯丁二烯橡膠、丁基橡膠、腈橡膠)及嵌段共聚物(例如,苯乙烯-丁二烯、高抗沖聚苯乙烯、聚二氯膦腈)。在另外實施例中,黏著層261可包含透光黏著劑。在更另外實施例中,透光黏著劑可包含一或多種光學透明聚合物:丙烯酸(例如,聚甲基丙烯酸甲酯(polymethylmethacrylate;PMMA))、環氧樹脂、矽酮及/或聚胺基甲酸酯。環氧樹脂之實例包括基於雙酚之環氧樹脂、基於酚醛清漆之環氧樹脂、基於環脂化合物之環氧樹脂及基於縮水甘油胺之環氧樹脂。在更另外實施例中,透光黏著劑可包含但不限於丙烯酸黏著劑(例如,3M 8212黏著劑),或光學透明液體黏著劑(例如,LOCTITE光學透明液體黏著劑)。透光黏著劑之例示性實施例包含透明丙烯酸樹脂、環氧樹脂、矽酮及聚胺基甲酸酯。舉例而言,光學透明液體黏著劑可包含LOCTITE AD 8650、LOCTITE AA 3922、LOCTITE EA E-05MR、LOCTITE UK U-09LV中之一或多者,其皆可自Henkel購得。In some embodiments, the adhesive layer 261 may comprise polyolefins, polyamides, halogen-containing polymers (eg, polyvinyl chloride or fluoropolymers), elastomers, urethanes, phenolic resins, parylenes , one or more of polyethylene terephthalate (polyethylene terephthalate; PET) and polyether ether ketone (PEEK). Example embodiments of polyolefins include low molecular weight polyethylene (LDPE), high molecular weight polyethylene (HDPE), ultrahigh molecular weight polyethylene (UHMWPE), and polypropylene ( polypropylene; PP). Example embodiments of fluoropolymers include polytetrafluoroethylene (PTFE), polyvinylfluoride (PVF), polyvinylidene fluoride (PVDF), perfluoropolyether (PFPE), Perfluorosulfonic acid (PFSA), perfluoroalkoxy (PFA), fluorinated ethylene propylene (FEP) polymers and ethylene tetrafluoroethylene (ETFE) polymers. Example embodiments of elastomers include rubbers (eg, polybutadiene, polyisoprene, neoprene, butyl rubber, nitrile rubber) and block copolymers (eg, styrene-butadiene, high impact polystyrene, polydichlorophosphazene). In another embodiment, the adhesive layer 261 may include a light-transmitting adhesive. In yet other embodiments, the light-transmitting adhesive may comprise one or more optically clear polymers: acrylic (eg, polymethylmethacrylate (PMMA)), epoxy, silicone, and/or polyamine based formate. Examples of epoxy resins include bisphenol-based epoxy resins, novolac-based epoxy resins, cycloaliphatic compound-based epoxy resins, and glycidylamine-based epoxy resins. In still further embodiments, the light transmissive adhesive may include, but is not limited to, an acrylic adhesive (eg, 3M 8212 adhesive), or an optically clear liquid adhesive (eg, LOCTITE optically clear liquid adhesive). Exemplary examples of clear adhesives include clear acrylics, epoxies, silicones, and polyurethanes. For example, the optically clear liquid adhesive may comprise one or more of LOCTITE AD 8650, LOCTITE AA 3922, LOCTITE EA E-05MR, LOCTITE UK U-09LV, all available from Henkel.

在一些實施例中,黏著層261可包含約0.001兆帕斯卡(MPa)或更大、約0.01 MPa或更大、約0.1 MPa或更大、約1 MPa或更小、約0.5 MPa或更小、約0.1 MPa或更小或約0.05 MPa或更小之彈性模數。在一些實施例中,黏著層261可包含在自約0.001 MPa至約1 MPa、自約0.01 MPa至約1 MPa、自約0.01 MPa至約0.5 MPa、自約0.05 MPa至約0.5 MPa、自約0.1 MPa至約0.5 MPa、自約0.001 MPa至約0.5 MPa、自約0.001 MPa至約0.01 MPa之一範圍或在其間之任一範圍或子範圍中的一彈性模數。在一些實施例中,黏著層可包含在以下針對基於聚合物之部分241之彈性模數論述的範圍中之一或多者內之一彈性模數。In some embodiments, the adhesion layer 261 may comprise about 0.001 megapascals (MPa) or more, about 0.01 MPa or more, about 0.1 MPa or more, about 1 MPa or less, about 0.5 MPa or less, A modulus of elasticity of about 0.1 MPa or less or about 0.05 MPa or less. In some embodiments, the adhesion layer 261 may be included at from about 0.001 MPa to about 1 MPa, from about 0.01 MPa to about 1 MPa, from about 0.01 MPa to about 0.5 MPa, from about 0.05 MPa to about 0.5 MPa, from about A modulus of elasticity in a range of 0.1 MPa to about 0.5 MPa, from about 0.001 MPa to about 0.5 MPa, from about 0.001 MPa to about 0.01 MPa, or in any range or sub-range therebetween. In some embodiments, the adhesive layer may comprise an elastic modulus within one or more of the ranges discussed below for the elastic modulus of the polymer-based portion 241 .

如在第2圖、第5圖及第12圖中展示,可折疊設備101、401及/或1201之基於聚合物之部分241可定位於第一部分221或421與第二部分231或431之間。在一些實施例中,如所展示,基於聚合物之部分241可至少部分定位於第二凹座244或444中。在另外實施例中,如所展示,基於聚合物之部分241可填充第二凹座244或444。在一些實施例中,雖未展示,但第二凹座可未完全填充,例如,以為電子裝置及/或機械裝置留出空間。在一些實施例中,雖未展示,但另一基於聚合物之部分(例如,類似於基於聚合物之部分241)可延伸至第一凹座內及/或可填充該第一凹座。如在第2圖、第5圖及第12圖中展示,基於聚合物之部分241可包含與第三接觸表面245相對之一第四接觸表面247。在一些實施例中,如所展示,第四接觸表面247可包含一平坦表面。在另外實施例中,第四接觸表面247可實質上與第二表面區225或425及第四表面區235或435共面(例如,沿著一共同平面(第二平面204b或404b)延伸)。在一些實施例中,第三接觸表面245可包含一平坦表面。在一些實施例中,除了第四接觸表面247實質上與第二表面區225或425及第四表面區235或435共面之外,第三接觸表面245可實質上與第二中心表面區219或419共面(例如,沿著一共同平面(第四平面204d)延伸)。在一些實施例中,如在第2圖及第5圖中展示,黏著層261之第一接觸表面263可面向基於聚合物之部分241之第四接觸表面247。在另外實施例中,如所展示,黏著層261之第一接觸表面263可接觸基於聚合物之部分241之第四接觸表面247。As shown in Figures 2, 5 and 12, the polymer-based portion 241 of the foldable device 101, 401 and/or 1201 may be positioned between the first portion 221 or 421 and the second portion 231 or 431 . In some embodiments, the polymer-based portion 241 can be positioned at least partially in the second recess 244 or 444 as shown. In further embodiments, the polymer-based portion 241 may fill the second recess 244 or 444 as shown. In some embodiments, although not shown, the second recess may not be fully filled, eg, to make room for electronic and/or mechanical devices. In some embodiments, although not shown, another polymer-based portion (eg, similar to polymer-based portion 241 ) may extend into and/or fill the first recess. As shown in FIGS. 2 , 5 and 12 , the polymer-based portion 241 may include a fourth contact surface 247 opposite the third contact surface 245 . In some embodiments, as shown, the fourth contact surface 247 may comprise a flat surface. In further embodiments, the fourth contact surface 247 may be substantially coplanar with the second surface region 225 or 425 and the fourth surface region 235 or 435 (eg, extending along a common plane (the second plane 204b or 404b )) . In some embodiments, the third contact surface 245 may comprise a flat surface. In some embodiments, the third contact surface 245 may be substantially coplanar with the second central surface region 219 except that the fourth contact surface 247 is substantially coplanar with the second surface region 225 or 425 and the fourth surface region 235 or 435 or 419 are coplanar (eg, extending along a common plane (fourth plane 204d )). In some embodiments, as shown in FIGS. 2 and 5 , the first contact surface 263 of the adhesive layer 261 may face the fourth contact surface 247 of the polymer-based portion 241 . In further embodiments, as shown, the first contact surface 263 of the adhesive layer 261 may contact the fourth contact surface 247 of the polymer-based portion 241 .

在一些實施例中,基於聚合物之部分241包含聚合物(例如,光學透明聚合物)。在另外實施例中,基於聚合物之部分241可包含光學透明物中之一或多種:丙烯酸(例如,聚甲基丙烯酸甲酯(polymethylmethacrylate;PMMA))、環氧樹脂、矽酮及/或聚胺基甲酸酯。環氧樹脂之實例包括基於雙酚之環氧樹脂、基於酚醛清漆之環氧樹脂、基於環脂化合物之環氧樹脂及基於縮水甘油胺之環氧樹脂。在另外實施例中,基於聚合物之部分241可包含聚烯烴、聚醯胺、含鹵素聚合物(例如,聚氯乙烯或含氟聚合物)、彈性體、胺甲酸乙酯、酚醛樹脂、聚對二甲苯、聚對苯二甲酸乙二酯(polyethylene terephthalate;PET)及聚醚醚酮(polyether ether ketone;PEEK)中之一或多者。聚烯烴之實例實施例包括低分子量聚乙烯(low molecular weight polyethylene;LDPE)、高分子量聚乙烯(high molecular weight polyethylene;HDPE)、超高分子量聚乙烯(ultrahigh molecular weight polyethylene;UHMWPE)及聚丙烯(polypropylene;PP)。含氟聚合物之實例實施例包括聚四氟乙烯(polytetrafluoroethylene;PTFE)、聚氟乙烯(polyvinylfluoride;PVF)、聚偏二氟乙烯(polyvinylidene fluoride;PVDF)、全氟丙醚(perfluoropolyether;PFPE)、全氟磺酸(perfluorosulfonic acid;PFSA)、全氟烷氧基(perfluoroalkoxy;PFA)、氟化乙烯丙烯(fluorinated ethylene propylene;FEP)聚合物及乙烯四氟乙烯(ethylene tetrafluoro ethylene;ETFE)聚合物。彈性體之實例實施例包括橡膠(例如,聚丁二烯、聚異戊二烯、氯丁二烯橡膠、丁基橡膠、腈橡膠)及嵌段共聚物(例如,苯乙烯-丁二烯、高抗沖聚苯乙烯、聚二氯膦腈),例如,包含聚苯乙烯、聚二氯膦腈及聚(5-亞乙基-2-降冰片烯)中之一或多者。在一些實施例中,該基於聚合物之部分可包含溶膠凝膠材料。聚胺基甲酸酯之實例實施例包含熱固性聚胺基甲酸酯,例如,可購自Incorez之Dispurez 102,及熱塑性聚胺基甲酸酯,例如,可購自Huntsman之KrystalFlex PE505。在更另外實施例中,第二部分可包含乙烯酸共聚物。乙烯酸共聚物之一例示性實施例包括可購自Dow之SURLYN(例如,Surlyn PC-2000、Surlyn 8940、Surlyn 8150)。第二部分之一額外例示性實施例包含可購自Axalta之Eleglass w802-GL044,具有自1重量%至2重量%之交聯劑。在一些實施例中,基於聚合物之部分241可進一步包含奈米粒子,例如,碳黑、碳奈米管、矽石奈米粒子或包含聚合物之奈米粒子。在一些實施例中,基於聚合物之部分可進一步包含纖維,以形成聚合物-纖維複合物。In some embodiments, the polymer-based portion 241 comprises a polymer (eg, an optically clear polymer). In further embodiments, the polymer-based portion 241 may comprise one or more of optically transparent: acrylic (eg, polymethylmethacrylate (PMMA)), epoxy, silicone, and/or poly Urethane. Examples of epoxy resins include bisphenol-based epoxy resins, novolac-based epoxy resins, cycloaliphatic compound-based epoxy resins, and glycidylamine-based epoxy resins. In further embodiments, the polymer-based portion 241 may comprise polyolefins, polyamides, halogen-containing polymers (eg, polyvinyl chloride or fluoropolymers), elastomers, urethanes, phenolic resins, poly One or more of p-xylene, polyethylene terephthalate (PET) and polyether ether ketone (PEEK). Example embodiments of polyolefins include low molecular weight polyethylene (LDPE), high molecular weight polyethylene (HDPE), ultrahigh molecular weight polyethylene (UHMWPE), and polypropylene ( polypropylene; PP). Example embodiments of fluoropolymers include polytetrafluoroethylene (PTFE), polyvinylfluoride (PVF), polyvinylidene fluoride (PVDF), perfluoropolyether (PFPE), Perfluorosulfonic acid (PFSA), perfluoroalkoxy (PFA), fluorinated ethylene propylene (FEP) polymers and ethylene tetrafluoroethylene (ETFE) polymers. Example embodiments of elastomers include rubbers (eg, polybutadiene, polyisoprene, neoprene, butyl rubber, nitrile rubber) and block copolymers (eg, styrene-butadiene, High impact polystyrene, polydichlorophosphazene), for example, comprising one or more of polystyrene, polydichlorophosphazene, and poly(5-ethylene-2-norbornene). In some embodiments, the polymer-based portion may comprise a sol-gel material. Example embodiments of polyurethanes include thermoset polyurethanes, such as Dispurez 102, available from Incorez, and thermoplastic polyurethanes, such as KrystalFlex PE505, available from Huntsman. In still further embodiments, the second part may comprise an ethylene acid copolymer. An illustrative example of an ethylene acid copolymer includes SURLYN commercially available from Dow (eg, Surlyn PC-2000, Surlyn 8940, Surlyn 8150). An additional exemplary embodiment of the second section comprises Eleglass w802-GL044, available from Axalta, with from 1 wt% to 2 wt% crosslinker. In some embodiments, the polymer-based portion 241 may further comprise nanoparticles, eg, carbon black, carbon nanotubes, silica nanoparticles, or nanoparticles comprising polymers. In some embodiments, the polymer-based portion may further comprise fibers to form a polymer-fiber composite.

在一些實施例中,基於聚合物之部分241可包含一熱膨脹係數(coefficient of thermal expansion;CTE)。如本文中使用,熱膨脹係數係使用Picoscale Michelson干涉儀在-20℃與40℃之間根據ASTM E289-17量測。在一些實施例中,基於聚合物之部分241可包含氧化銅、β石英、鎢酸鹽、釩酸鹽、焦磷酸鹽及/或鎳-鈦合金中之一或多者之粒子。在一些實施例中,基於聚合物之部分241可包含約-20 × 10-7 1/℃或更大、約-10 × 10-7 1/℃或更大、約-5 × 10-7 1/℃或更大、約-2 × 10-7 1/℃或更大、約10 × 10-7 1/℃或更小、約5 × 10-7 1/℃或更小、約2 × 10-7 1/℃或更小、約1 × 10-7 1/℃或更小或01/℃或更小之一CTE。在一些實施例中,基於聚合物之部分241可包含在自約-20 × 10-7 1/℃至約10 × 10-7 1/℃、自約-20 × 10-7 1/℃至約5 × 10-7 1/℃、自約-10 × 10-7 1/℃至約-5 × 10-7 1/℃、自約-10 × 10-7 1/℃至約2 × 10-7 1/℃、自約-10 × 10-7 1/℃至0 1/℃、自約-5 × 10-7 1/℃至0 1/℃、自約-2 × 10-7 1/℃至約0 1/℃之一範圍或其間之任一範圍或子範圍中的一CTE。藉由提供包含低(例如,負)熱膨脹係數之基於聚合物之部分,可減輕在該基於聚合物之部分之固化期間由體積改變造成的翹曲。In some embodiments, the polymer-based portion 241 may include a coefficient of thermal expansion (CTE). As used herein, coefficient of thermal expansion is measured using a Picoscale Michelson interferometer between -20°C and 40°C according to ASTM E289-17. In some embodiments, the polymer-based portion 241 may comprise particles of one or more of copper oxide, beta quartz, tungstate, vanadate, pyrophosphate, and/or nickel-titanium alloys. In some embodiments, the polymer-based portion 241 may comprise about -20 x 10" 7 1/°C or greater, about -10 x 10" 7 1/°C or greater, about -5 x 10 "7 1 /°C or more, about -2 × 10 -7 1/°C or more, about 10 × 10 -7 1/°C or less, about 5 × 10 -7 1/°C or less, about 2 × 10 A CTE of -7 1/°C or less, about 1 x 10 -7 1/°C or less, or 01/°C or less. In some embodiments, the polymer-based moiety 241 can be included at from about -20 x 10 -7 1/°C to about 10 x 10 -7 1/°C, from about -20 x 10 -7 1/°C to about 5 × 10 -7 1/°C, from about -10 × 10 -7 1/°C to about -5 × 10 -7 1/°C, from about -10 × 10 -7 1/°C to about 2 × 10 -7 1/°C, from about -10 × 10 -7 1/°C to 0 1/°C, from about -5 × 10 -7 1/°C to 0 1/°C, from about -2 × 10 -7 1/°C to A CTE in a range of about 0 1/°C or any range or sub-range therebetween. By providing a polymer-based portion comprising a low (eg, negative) coefficient of thermal expansion, warpage caused by volume changes during curing of the polymer-based portion can be mitigated.

在一些實施例中,基於聚合物之部分241可包含約0.01兆帕斯卡(MPa)或更大、約1 MPa或更大、約10 MPa或更大、約20 MPa或更大、約100 MPa或更大、約200 MPa或更大、約1,000 MPa或更大、約5,000 MPa或更小、約3,000 MPa或更小、約1,000 MPa或更小、約500 MPa或更小或約200 MPa或更小之一彈性模數。在一些實施例中,基於聚合物之部分241可包含在自約0.001 MPa至約5,000 MPa、自約0.01 MPa至約3,000 MPa、自約0.01 MPa至約1,000 MPa、自約0.01 MPa至約500 MPa、自約0.01 MPa至約200 MPa、自約1 MPa至約5,000 MPa、自約1 MPa至約1,000 MPa、自約1 MPa至約1,000 MPa、自約1 MPa至約200 MPa、自約10 MPa至約5,000 MPa、自約10 MPa至約1,000 MPa、自約10 MPa至約200 MPa、自約20 MPa至約3,000 MPa、自約20 MPa至約1,000 MPa、自約20 MPa至約200 MPa、自約100 MPa至約3,000 MPa、自約100 MPa至約1,000 MPa、自約100 MPa至約200 MPa、自約200 MPa至約5,000 MPa、自約200 MPa至約3,000 MPa、自約200 MPa至約1,000 MPa之一範圍及其間之所有範圍及子範圍中的一彈性模數。在一些實施例中,基於聚合物之部分241之彈性模數可在自約1 GPa至約20 GPa、自約1 GPa至約18 GPa、自約1 GPa至約10 GPa、自約1 GPa至約5 GPa、自約1 GPa至約3 GPa之一範圍或在其間之任一範圍或子範圍中的一彈性模數。藉由提供具有在自約0.01 MPa至約3,000 MPa之一範圍中(例如,自約20 MPa至約3 GPa之一範圍中)的一彈性模數之基於聚合物之部分241,可有助於在無故障之情況下折疊可折疊設備。在一些實施例中,黏著層261包含大於基於聚合物之部分241之彈性模數的一彈性模數,該配置提供抗刺紮性之改良效能。在一些實施例中,基於聚合物之部分241之彈性模數可小於可折疊基板206、407或807之彈性模數。在一些實施例中,黏著層261可包含在本段落中以上列舉之範圍內的一彈性模數。在另外實施例中,黏著層261可包含實質上與基於聚合物之部分241之彈性模數相同的彈性模數。在另外實施例中,黏著層261之彈性模數可在自約1 GPa至約20 GPa、自約1 GPa至約18 GPa、自約1 GPa至約10 GPa、自約1 GPa至約5 GPa、自約1 GPa至約3 GPa之一範圍或在其間之任一範圍或子範圍中的一彈性模數。在一些實施例中,基於聚合物之部分241之彈性模數可小於第一部分221、421或821之彈性模數。在一些實施例中,基於聚合物之部分241之彈性模數可小於第二部分231、431或831之彈性模數。In some embodiments, the polymer-based portion 241 may comprise about 0.01 megapascals (MPa) or greater, about 1 MPa or greater, about 10 MPa or greater, about 20 MPa or greater, about 100 MPa or greater, or Greater, about 200 MPa or more, about 1,000 MPa or more, about 5,000 MPa or less, about 3,000 MPa or less, about 1,000 MPa or less, about 500 MPa or less, or about 200 MPa or less One of the smaller elastic modulus. In some embodiments, the polymer-based portion 241 can be included in a range from about 0.001 MPa to about 5,000 MPa, from about 0.01 MPa to about 3,000 MPa, from about 0.01 MPa to about 1,000 MPa, from about 0.01 MPa to about 500 MPa , from about 0.01 MPa to about 200 MPa, from about 1 MPa to about 5,000 MPa, from about 1 MPa to about 1,000 MPa, from about 1 MPa to about 1,000 MPa, from about 1 MPa to about 200 MPa, from about 10 MPa to about 5,000 MPa, from about 10 MPa to about 1,000 MPa, from about 10 MPa to about 200 MPa, from about 20 MPa to about 3,000 MPa, from about 20 MPa to about 1,000 MPa, from about 20 MPa to about 200 MPa, from about 100 MPa to about 3,000 MPa, from about 100 MPa to about 1,000 MPa, from about 100 MPa to about 200 MPa, from about 200 MPa to about 5,000 MPa, from about 200 MPa to about 3,000 MPa, from about 200 MPa to A modulus of elasticity in a range of about 1,000 MPa and all ranges and subranges therebetween. In some embodiments, the elastic modulus of the polymer-based moiety 241 can range from about 1 GPa to about 20 GPa, from about 1 GPa to about 18 GPa, from about 1 GPa to about 10 GPa, from about 1 GPa to about 1 GPa to An elastic modulus of about 5 GPa, a range from about 1 GPa to about 3 GPa, or any range or subrange therebetween. By providing the polymer-based portion 241 having an elastic modulus in a range from about 0.01 MPa to about 3,000 MPa (eg, in a range from about 20 MPa to about 3 GPa), it may be helpful to Fold the foldable device without trouble. In some embodiments, the adhesive layer 261 comprises a modulus of elasticity that is greater than the modulus of elasticity of the polymer-based portion 241, a configuration that provides improved performance in puncture resistance. In some embodiments, the elastic modulus of the polymer-based portion 241 may be less than the elastic modulus of the foldable substrate 206 , 407 or 807 . In some embodiments, the adhesive layer 261 may comprise an elastic modulus within the ranges recited above in this paragraph. In further embodiments, the adhesive layer 261 may comprise substantially the same elastic modulus as the elastic modulus of the polymer-based portion 241 . In further embodiments, the elastic modulus of the adhesive layer 261 may be from about 1 GPa to about 20 GPa, from about 1 GPa to about 18 GPa, from about 1 GPa to about 10 GPa, from about 1 GPa to about 5 GPa , an elastic modulus in a range from about 1 GPa to about 3 GPa, or in any range or subrange therebetween. In some embodiments, the elastic modulus of the polymer-based portion 241 may be less than the elastic modulus of the first portion 221 , 421 , or 821 . In some embodiments, the elastic modulus of the polymer-based portion 241 may be less than the elastic modulus of the second portion 231 , 431 , or 831 .

在一些實施例中,如在第2圖至第5圖及第11圖至第12圖中展示,塗層251可安置於可折疊基板206或407之第一主表面203上。在另外實施例中,塗層251可安置於第一部分221或421、第二部分231或431及中心部分281或481上。在一些實施例中,塗層251可包含一第三主表面253及與第三主表面253相對之一第四主表面255。在另外實施例中,塗層251(例如,第四主表面255)可接觸可折疊基板206或407(例如,第一主表面203或403)。在另外實施例中,塗層251之至少一部分可定位於第一凹座234或434中。在更另外實施例中,塗層251可填充第一凹座234或434。在另外實施例中,塗層251可包含界定於第三主表面253與第四主表面255之間的一塗層厚度257。在另外實施例中,塗層厚度257可為約0.1 µm或更大、約1 µm或更大、約5 μm或更大、約10 μm或更大、約15 μm或更大、約20 μm或更大、約25 μm或更大、約40 μm或更大、約50 μm或更大、約60 μm或更大、約70 μm或更大、約80 μm或更大、約90 μm或更大、約200 µm或更小、約100 µm或更小或約50 μm或更小、約30 μm或更小、約25 μm或更小、約20 μm或更小、約20 μm或更小、約15 μm或更小或約10 μm或更小。在一些實施例中,塗層厚度257可在自約0.1 μm至約200 μm、自約1 μm至約200 μm、自約10 μm至約200 μm、自約50 μm至約200 μm、自約0.1 μm至約100 μm、自約1 μm至約100 μm、自約10 μm至約100 μm、自約20 μm至約100 μm、自約30 μm至約100 μm、自約40 μm至約100 μm、自約50 μm至約100 μm、自約60 μm至約100 μm、自約70 μm至約100 μm、自約80 μm至約100 μm、自約90 μm至約100 μm、自約0.1 μm至約50 μm、自約1 μm至約50 μm、自約10 μm至約50 μm之一範圍或其間之任一範圍或子範圍中。在另外實施例中,塗層厚度257可在自約0.1 μm至約50 μm、自約0.1 μm至約30 μm、自約0.1 μm至約25 μm、自約0.1 μm至約20 μm、自約0.1 μm至約15 μm、自約0.1 μm至約10 μm、自約1 μm至約30 μm、自約1 μm至約25 μm、自約1 μm至約20 μm、自約1 μm至約15 μm、自約1 μm至約10 μm、自約5 μm至約30 μm、自約5 μm至約25 μm、自約5 μm至約20 μm、自約5 μm至約15 μm、自約5 μm至約10 μm、自約10 μm至約30 μm、自約10 μm至約25 μm、自約10 μm至約20 μm、自約10 μm至約15 μm、自約15 μm至約30 μm、自約15 μm至約25 μm、自約15 μm至約20 μm、自約20 μm至約30 μm、自約20 μm至約25 μm之一範圍或其間之任一範圍或子範圍中。In some embodiments, as shown in FIGS. 2-5 and 11-12 , the coating 251 may be disposed on the first major surface 203 of the foldable substrate 206 or 407 . In further embodiments, the coating 251 may be disposed on the first portion 221 or 421 , the second portion 231 or 431 and the central portion 281 or 481 . In some embodiments, the coating 251 may include a third major surface 253 and a fourth major surface 255 opposite the third major surface 253 . In further embodiments, coating 251 (eg, fourth major surface 255 ) may contact foldable substrate 206 or 407 (eg, first major surface 203 or 403 ). In further embodiments, at least a portion of the coating 251 may be positioned in the first recess 234 or 434 . In still further embodiments, the coating 251 may fill the first recess 234 or 434 . In further embodiments, coating 251 may include a coating thickness 257 defined between third major surface 253 and fourth major surface 255 . In further embodiments, the coating thickness 257 may be about 0.1 μm or greater, about 1 μm or greater, about 5 μm or greater, about 10 μm or greater, about 15 μm or greater, about 20 μm or larger, about 25 μm or larger, about 40 μm or larger, about 50 μm or larger, about 60 μm or larger, about 70 μm or larger, about 80 μm or larger, about 90 μm or larger, or larger, about 200 µm or less, about 100 µm or less, or about 50 µm or less, about 30 µm or less, about 25 µm or less, about 20 µm or less, about 20 µm or less Small, about 15 μm or less, or about 10 μm or less. In some embodiments, the coating thickness 257 can range from about 0.1 μm to about 200 μm, from about 1 μm to about 200 μm, from about 10 μm to about 200 μm, from about 50 μm to about 200 μm, from about 0.1 μm to about 100 μm, from about 1 μm to about 100 μm, from about 10 μm to about 100 μm, from about 20 μm to about 100 μm, from about 30 μm to about 100 μm, from about 40 μm to about 100 μm μm, from about 50 μm to about 100 μm, from about 60 μm to about 100 μm, from about 70 μm to about 100 μm, from about 80 μm to about 100 μm, from about 90 μm to about 100 μm, from about 0.1 In one of the range of μm to about 50 μm, from about 1 μm to about 50 μm, from about 10 μm to about 50 μm, or any range or sub-range therebetween. In further embodiments, the coating thickness 257 may range from about 0.1 μm to about 50 μm, from about 0.1 μm to about 30 μm, from about 0.1 μm to about 25 μm, from about 0.1 μm to about 20 μm, from about 0.1 μm to about 15 μm, from about 0.1 μm to about 10 μm, from about 1 μm to about 30 μm, from about 1 μm to about 25 μm, from about 1 μm to about 20 μm, from about 1 μm to about 15 μm μm, from about 1 μm to about 10 μm, from about 5 μm to about 30 μm, from about 5 μm to about 25 μm, from about 5 μm to about 20 μm, from about 5 μm to about 15 μm, from about 5 μm to about 5 μm μm to about 10 μm, from about 10 μm to about 30 μm, from about 10 μm to about 25 μm, from about 10 μm to about 20 μm, from about 10 μm to about 15 μm, from about 15 μm to about 30 μm , from about 15 μm to about 25 μm, from about 15 μm to about 20 μm, from about 20 μm to about 30 μm, from about 20 μm to about 25 μm, or in any range or subrange therebetween.

在一些實施例中,基於聚合物之部分及/或黏著層可包含一屈服應變。提供與第二凹座相對之一第一凹座可減小由凹座中的基於聚合物之部分或其他材料(例如,黏著層)遇到之應變(例如,自0%至50%減小)。因此,可放鬆對基於聚合物之部分之屈服應變的要求。在一些實施例中,基於聚合物之部分及/或黏著層之屈服應變可為約3%或更大、約4%或更大、約5%或更大、約6%或更大、約7%或更大、約500%或更小、約100%或更小、約50%或更小、約20%或更小、約15%或更小、約10%或更小、約9%或更小或約8%或更小。在一些實施例中,基於聚合物之部分及/或黏著層之屈服應變可在自約1%至約500%、自約1%至約100%、自約2%至約100%、自約2%至約50%、自約3%至約50%、自約3%至約20%、自約4%至約20%、自約4%至約15%、自約5%至約15%、自約5%至約10%、自約5%至約9%、自約6%至約9%、自約6%至約8%、自約7%至約8%之一範圍或其間之任一範圍或子範圍中。In some embodiments, the polymer-based portion and/or the adhesive layer may include a yield strain. Providing a first pocket opposite the second pocket reduces the strain (eg, from 0% to 50%) encountered by the polymer-based portion or other material (eg, adhesive layer) in the pocket ). Thus, the requirement for yield strain of the polymer-based part can be relaxed. In some embodiments, the polymer-based portion and/or the adhesive layer may have a yield strain of about 3% or greater, about 4% or greater, about 5% or greater, about 6% or greater, about 7% or more, about 500% or less, about 100% or less, about 50% or less, about 20% or less, about 15% or less, about 10% or less, about 9% % or less or about 8% or less. In some embodiments, the yield strain of the polymer-based portion and/or the adhesive layer may be from about 1% to about 500%, from about 1% to about 100%, from about 2% to about 100%, from about 2% to about 50%, from about 3% to about 50%, from about 3% to about 20%, from about 4% to about 20%, from about 4% to about 15%, from about 5% to about 15% %, from about 5% to about 10%, from about 5% to about 9%, from about 6% to about 9%, from about 6% to about 8%, from about 7% to about 8%, or in any range or subrange in between.

在一些實施例中,塗層251可包含聚合硬塗層。在另外實施例中,該聚合硬塗層可包含乙烯-酸共聚物、基於聚胺基甲酸酯之聚合物、丙烯酸酯樹脂及巰基-酯樹脂中之一或多者。乙烯-酸共聚物之例示性實施例包括乙烯-丙烯酸共聚物、乙烯-甲基丙烯酸共聚物及乙烯-丙烯酸-甲基丙烯酸三元共聚物(例如,由DuPont製造之Nucrel)、乙烯酸共聚物之離子聚合物(例如,由DuPont製造之Surlyn)及乙烯-丙烯酸共聚物胺分散液(例如,由BYK製造之Aquacer)。基於聚胺基甲酸酯之聚合物之例示性實施例包括水性改質聚胺基甲酸酯分散液(例如,由Axalta製造之Eleglas®)。可為可UV固化的丙烯酸酯樹脂之例示性實施例包括丙烯酸酯樹脂(例如,由Allinex製造之Uvekol®樹脂)、氰基丙烯酸酯黏著劑(例如,由Krayden製造之Permabond® UV620)及UV自由基丙烯酸樹脂(例如,Ultrabond擋風玻璃修復樹脂,例如,Ultrabond(45CPS))。巰基-酯樹脂之例示性實施例包括巰基-酯三烯丙基異氰酸酯(例如,Norland光學黏著劑NOA 61)。在另外實施例中,聚合硬塗層可包含乙烯-丙烯酸共聚物及乙烯-甲基丙烯酸共聚物,其可經離子聚合以經由羧酸殘基與典型鹼性金屬離子(例如,鈉及鉀,且亦有鋅)之中和來形成離子聚合物樹脂。此乙烯-丙烯酸共聚物及乙烯-甲基丙烯酸離子聚合物可分散於水中,且塗佈至基板上以形成離子聚合物塗層。替代地,此等酸共聚物可與氨中和,其在塗佈及乾燥後釋放氨以將酸共聚物改組為塗層。藉由提供包含聚合塗層之塗層,可折疊設備可包含低能量破裂。In some embodiments, coating 251 may comprise a polymeric hard coat. In further embodiments, the polymeric hard coat layer may comprise one or more of ethylene-acid copolymers, polyurethane-based polymers, acrylate resins, and mercapto-ester resins. Illustrative examples of ethylene-acid copolymers include ethylene-acrylic acid copolymers, ethylene-methacrylic acid copolymers, and ethylene-acrylic acid-methacrylic acid terpolymers (eg, Nucrel manufactured by DuPont), ethylene acid copolymers ionic polymers (eg, Surlyn manufactured by DuPont) and ethylene-acrylic acid copolymer amine dispersions (eg, Aquacer manufactured by BYK). Illustrative examples of polyurethane-based polymers include aqueous modified polyurethane dispersions (eg, Eleglas® manufactured by Axalta). Illustrative examples of acrylate resins that may be UV curable include acrylate resins (eg, Uvekol® resins manufactured by Allinex), cyanoacrylate adhesives (eg, Permabond® UV620 manufactured by Krayden), and UV free based acrylic resin (eg, Ultrabond windshield repair resin, eg, Ultrabond (45CPS)). Illustrative examples of mercapto-ester resins include mercapto-ester triallyl isocyanate (eg, Norland Optical Adhesive NOA 61). In further embodiments, the polymeric hard coat layer can include ethylene-acrylic acid copolymers and ethylene-methacrylic acid copolymers, which can be ionically polymerized to react via carboxylic acid residues with typical basic metal ions (eg, sodium and potassium, and also zinc) to form ionomer resins. The ethylene-acrylic acid copolymer and ethylene-methacrylic acid ionomer can be dispersed in water and coated onto a substrate to form an ionomer coating. Alternatively, these acid copolymers can be neutralized with ammonia, which liberates ammonia after coating and drying to reconstitute the acid copolymer into a coating. By providing a coating comprising a polymeric coating, the foldable device can contain low energy rupture.

在一些實施例中,塗層可包含一聚合硬塗層,其包含光學透明聚合硬塗佈層。用於光學透明聚合硬塗佈層之合適材料包括但不限於:經固化之丙烯酸樹脂材料、無機-有機混合聚合材料、脂族或芳族六官能團胺甲酸乙酯丙烯酸酯、基於矽氧烷之混合材料及奈米複合材料,例如,環氧樹脂及具有奈米矽酸酯之胺甲酸乙酯材料。在一些實施例中,光學透明聚合硬塗佈層可基本上由此等材料中之一或多種組成。在一些實施例中,光學透明聚合硬塗佈層可由此等材料中之一或多種組成。如本文中使用,「無機-有機混合聚合材料」意謂包含具有無機及有機組分之單體的聚合材料。無機-有機混合聚合物係藉由具有無機基團與有機基團之單體之間的聚合反應來獲得。無機-有機混合聚合物並非包含單獨的無機與有機成分或相之奈米複合材料,例如,分散於有機基質內之無機顆粒。更具體言之,用於光學透明聚合(optically transparent polymeric;OTP)硬塗佈層之合適材料包括但不限於聚醯亞胺、聚對苯二甲酸乙二酯(polyethylene terephthalate;PET)、聚碳酸酯(polycarbonate;PC)、聚甲基丙烯酸甲酯(poly methyl methacrylate;PMMA)、有機聚合物材料、無機-有機混合聚合材料及脂族或芳族六官能團胺甲酸乙酯丙烯酸酯。在一些實施例中,OTP硬塗佈層可基本上由有機聚合物材料、無機-有機混合聚合材料或脂族或芳族六官能團胺甲酸乙酯丙烯酸酯組成。在一些實施例中,OTP硬塗佈層可由聚醯亞胺、有機聚合物材料、無機-有機混合聚合材料或脂族或芳族六官能團胺甲酸乙酯丙烯酸酯組成。在一些實施例中,OTP硬塗佈層可包括奈米複合材料。在一些實施例中,OTP硬塗佈層可包括奈米矽酸酯、環氧樹脂及胺甲酸乙酯材料中之至少一種。用於此OTP硬塗佈層之合適組成描述於美國專利公開案第2015/0110990號中,其在此被以對其引用的方式全部併入。如本文中使用,「有機聚合物材料」意謂包含具有僅有機組分之單體的聚合材料。在一些實施例中,OTP硬塗佈層可包含由Gunze Limited製造且具有9H之硬度的有機聚合物材料,例如,Gunze之「高度耐用透明薄膜」。如本文中使用,「無機-有機混合聚合材料」意謂包含具有無機及有機組分之單體的聚合材料。無機-有機混合聚合物係藉由具有無機基團與有機基團之單體之間的聚合反應來獲得。無機-有機混合聚合物並非包含單獨的無機與有機成分或相位之奈米複合材料,例如,分散於有機基質內之無機顆粒。在一些實施例中,無機-有機混合聚合材料可包括包含基於無機矽之基團的經聚合單體,例如,矽倍半氧烷聚合物。矽倍半氧烷聚合物可例如為具有以下化學結構之烷基矽倍半氧烷、芳基矽倍半氧烷或芳基烷基矽倍半氧烷:(RSiO1.5 )n ,其中R為有機基團,例如但不限於,甲基或苯基。在一些實施例中,OTP硬塗佈層可包含與有機基質組合之矽倍半氧烷聚合物,例如,由Nippon Steel Chemical株式會社製造之SILPLUS。在一些實施例中,OTP硬塗佈層可包含90重量%至95重量%芳族六官能團胺甲酸乙酯丙烯酸酯(例如,由Miwon Specialty Chemical公司製造之PU662NT(芳族六官能團胺甲酸乙酯丙烯酸酯)),及10重量%至5重量%的具有8H或更大之硬度之光引發劑(例如,由Ciba Specialty Chemicals公司製造之Darocur 1173)。在一些實施例中,由脂族或芳族六官能團胺甲酸乙酯丙烯酸酯構成之OTP硬塗佈層可藉由在聚對苯二甲酸乙二酯(polyethylene terephthalate;PET)基板上旋塗該層、固化胺甲酸乙酯丙烯酸酯及自PET基板移除胺甲酸乙酯丙烯酸酯層來形成為單獨的層。OTP硬塗佈層可具有在1 µm至150 µm之一範圍(包括子範圍)中的塗層厚度(例如,塗層厚度257)。舉例而言,塗層厚度(例如,塗層厚度257)可在自10 µm至140 µm、自20 µm至130 µm、自30 µm至120 µm、自40 µm至110 µm、自50 µm至100 µm、自60 µm至90 µm、70 µm、80 µm、2 µm至140 µm、自4 µm至130 µm、6 µm至120 μm、自8 μm至110 μm、自10 µm至100 μm、自10 µm至90 μm、10 µm、80 µm、10 µm、70 µm、10 µm、60 µm、10 µm、50 µm之一範圍中或在具有此等值中之任何兩者作為端點之一範圍內。在一些實施例中,OTP硬塗佈層可為單一整體層。在一些實施例中,OTP硬塗佈層可為具有在80 µm至120 µm之範圍(包括子範圍)中之一厚度的無機-有機混合聚合材料層或有機聚合物材料層。舉例而言,包含無機-有機混合聚合材料或有機聚合物材料之OTP硬塗佈層可具有自80 µm至110 µm、90 µm至100 µm或在具有此等值中之任何兩者作為端點之一範圍內的一厚度。在一些實施例中,OTP硬塗佈層可為具有在10 µm至60 µm之範圍(包括子範圍)中之一厚度的脂族或芳族六官能團胺甲酸乙酯丙烯酸酯材料層。舉例而言,包含脂族或芳族六官能團胺甲酸乙酯丙烯酸酯材料之OTP硬塗佈層可具有10 µm至55 µm、10 µm至50 µm、10 µm至40 µm、10 µm至45 µm、10 µm至40 µm、10 µm至35 µm、10 µm至30 µm、10 µm至25 µm、10 µm至20 µm或具有此等值中之任何兩者作為端點之一範圍內的一厚度。In some embodiments, the coating may comprise a polymeric hardcoat comprising an optically clear polymeric hardcoat. Suitable materials for optically clear polymeric hardcoat layers include, but are not limited to: cured acrylic resin materials, inorganic-organic hybrid polymeric materials, aliphatic or aromatic hexafunctional urethane acrylates, siloxane-based Hybrid materials and nanocomposites, eg, epoxy resins and urethane materials with nanosilicates. In some embodiments, the optically clear polymeric hardcoat layer may consist essentially of one or more of these materials. In some embodiments, the optically clear polymeric hardcoat layer may be composed of one or more of these materials. As used herein, "inorganic-organic hybrid polymeric material" means a polymeric material comprising monomers having inorganic and organic components. Inorganic-organic hybrid polymers are obtained by polymerization between monomers having inorganic and organic groups. Inorganic-organic hybrid polymers are not nanocomposites comprising separate inorganic and organic components or phases, eg, inorganic particles dispersed within an organic matrix. More specifically, suitable materials for optically transparent polymeric (OTP) hard coat layers include, but are not limited to, polyimide, polyethylene terephthalate (PET), polycarbonate Ester (polycarbonate; PC), poly methyl methacrylate (poly methyl methacrylate; PMMA), organic polymer materials, inorganic-organic hybrid polymer materials and aliphatic or aromatic hexafunctional urethane acrylates. In some embodiments, the OTP hard coat layer may consist essentially of organic polymeric materials, inorganic-organic hybrid polymeric materials, or aliphatic or aromatic hexafunctional urethane acrylates. In some embodiments, the OTP hard coat layer may be composed of polyimide, organic polymeric materials, inorganic-organic hybrid polymeric materials, or aliphatic or aromatic hexafunctional urethane acrylates. In some embodiments, the OTP hard coat layer may include nanocomposites. In some embodiments, the OTP hard coat layer may include at least one of nanosilicate, epoxy, and urethane materials. Suitable compositions for this OTP hardcoat layer are described in US Patent Publication No. 2015/0110990, which is hereby incorporated by reference in its entirety. As used herein, "organic polymeric material" means a polymeric material comprising monomers having only organic components. In some embodiments, the OTP hard coat layer may comprise an organic polymer material manufactured by Gunze Limited and having a hardness of 9H, eg, Gunze's "Highly Durable Transparent Film". As used herein, "inorganic-organic hybrid polymeric material" means a polymeric material comprising monomers having inorganic and organic components. Inorganic-organic hybrid polymers are obtained by polymerization between monomers having inorganic and organic groups. Inorganic-organic hybrid polymers are not nanocomposites comprising separate inorganic and organic components or phases, eg, inorganic particles dispersed within an organic matrix. In some embodiments, the inorganic-organic hybrid polymeric material may include polymerized monomers comprising inorganic silicon-based groups, eg, silsesquioxane polymers. The silsesquioxane polymer can be, for example, an alkylsilsesquioxane, an arylsilsesquioxane, or an arylalkylsilsesquioxane having the following chemical structure: (RSiO 1.5 ) n , where R is Organic groups such as, but not limited to, methyl or phenyl. In some embodiments, the OTP hard coat layer may comprise a silsesquioxane polymer, eg, SILPLUS manufactured by Nippon Steel Chemical Co., Ltd., in combination with an organic matrix. In some embodiments, the OTP hard coat layer may comprise 90% to 95% by weight of an aromatic hexafunctional urethane acrylate (eg, PU662NT (aromatic hexafunctional urethane) manufactured by Miwon Specialty Chemical Company acrylate)), and 10% to 5% by weight of a photoinitiator having a hardness of 8H or greater (eg, Darocur 1173 manufactured by Ciba Specialty Chemicals). In some embodiments, an OTP hard coat layer composed of aliphatic or aromatic hexafunctional urethane acrylates can be formed by spin coating the polyethylene terephthalate (PET) substrate. layer, curing the urethane acrylate and removing the urethane acrylate layer from the PET substrate to form a separate layer. The OTP hard coat layer may have a coating thickness (eg, coating thickness 257) in one of the ranges of 1 μm to 150 μm, including sub-ranges. For example, coating thicknesses (eg, coating thickness 257) can range from 10 µm to 140 µm, from 20 µm to 130 µm, from 30 µm to 120 µm, from 40 µm to 110 µm, from 50 µm to 100 µm µm, from 60 µm to 90 µm, 70 µm, 80 µm, 2 µm to 140 µm, from 4 µm to 130 µm, 6 µm to 120 µm, from 8 µm to 110 µm, from 10 µm to 100 µm, from 10 µm µm to one of 90 µm, 10 µm, 80 µm, 10 µm, 70 µm, 10 µm, 60 µm, 10 µm, 50 µm or within a range with any two of these values as one of the endpoints . In some embodiments, the OTP hard coat layer may be a single integral layer. In some embodiments, the OTP hard coat layer may be an inorganic-organic hybrid polymeric material layer or an organic polymeric material layer having a thickness in a range of 80 μm to 120 μm, including sub-ranges. For example, an OTP hard coat layer comprising an inorganic-organic hybrid polymeric material or an organic polymeric material can have from 80 μm to 110 μm, 90 μm to 100 μm, or any two of these values as endpoints a thickness within a range. In some embodiments, the OTP hard coat layer may be a layer of aliphatic or aromatic hexafunctional urethane acrylate material having a thickness in the range of 10 μm to 60 μm, including sub-ranges. For example, OTP hard coat layers comprising aliphatic or aromatic hexafunctional urethane acrylate materials can have 10 µm to 55 µm, 10 µm to 50 µm, 10 µm to 40 µm, 10 µm to 45 µm , 10 µm to 40 µm, 10 µm to 35 µm, 10 µm to 30 µm, 10 µm to 25 µm, 10 µm to 20 µm, or a thickness within a range having either of these values as one of the endpoints .

在一些實施例中,塗層251(若提供)亦可包含易於清潔塗層、低摩擦塗層、疏油塗層、金剛石狀塗層、耐刮擦塗層或耐磨塗層中之一或多者。耐刮擦塗層可包含具有約500微米或更大之一厚度的氮氧化物,例如,氮氧化鋁或氮氧化矽。在此等實施例中,耐磨層可包含與耐刮擦塗層相同的材料。在一些實施例中,低摩擦塗層可包含高度氟化矽烷偶合劑,例如,具有垂在矽原子上之甲氧基團之烷基氟矽烷。在此等實施例中,易於清潔塗層可包含與低摩擦塗層相同的材料。在其他實施例中,易於清潔塗層可包含可質子化基團,例如,胺,例如,具有垂在矽原子上之甲氧基團之烷基胺基矽烷。在此等實施例中,疏油塗層可包含與易於清潔塗層相同的材料。在一些實施例中,金剛石狀塗層包含碳,且可藉由在存在烴電漿之情況下施加高電壓電位來產生。In some embodiments, the coating 251 (if provided) may also comprise one of an easy-to-clean coating, a low friction coating, an oleophobic coating, a diamond-like coating, a scratch-resistant coating, or a wear-resistant coating, or many. The scratch resistant coating may comprise oxynitride, eg, aluminum oxynitride or silicon oxynitride, having a thickness of about 500 microns or greater. In such embodiments, the abrasion resistant layer may comprise the same material as the scratch resistant coating. In some embodiments, the low friction coating may include a highly fluorinated silane coupling agent, eg, an alkyl fluorosilane with methoxy groups pendant on the silicon atom. In such embodiments, the easy-to-clean coating may comprise the same materials as the low friction coating. In other embodiments, the easy-to-clean coating may contain protonatable groups, eg, amines, eg, alkylaminosilanes with methoxy groups pendant on the silicon atom. In such embodiments, the oleophobic coating may comprise the same material as the easy-to-clean coating. In some embodiments, the diamond-like coating comprises carbon and can be produced by applying a high voltage potential in the presence of a hydrocarbon plasma.

與具有按第一距離與第二距離之總和凹進之一表面的一單一凹座相比,提供與一第二凹座相對之一第一凹座可減小定位於該第一凹座及/或該第二凹座中的材料之彎曲誘發應變。提供定位於該第一凹座及/或該第二凹座中的材料之減小之彎曲誘發應變可實現對更寬泛材料範圍之使用,此係由於對材料的減少之應變要求。舉例而言,較硬及/或較剛性材料(例如,塗層251)可定位於第一凹座中,此可改良可折疊設備之抗衝擊性、抗刺紮性、耐磨性及/或耐刮擦性。另外,控制定位於第一凹座中的第一材料(例如,塗層251)及定位於第二凹座中的第二材料之性質可控制可折疊設備及/或可折疊基板之中性軸之位置,此可減少(例如,減輕、消除)機械不穩定性、設備疲勞及/或設備故障之發生。Providing a first recess opposite a second recess reduces positioning of the first recess and the /or bending induced strain of the material in the second recess. Providing a reduced bending induced strain of the material positioned in the first pocket and/or the second pocket enables the use of a wider range of materials due to the reduced strain requirements on the material. For example, a harder and/or rigid material (eg, coating 251 ) can be positioned in the first recess, which can improve impact resistance, puncture resistance, abrasion resistance, and/or the foldable device Scratch resistance. Additionally, controlling the properties of the first material (eg, coating 251 ) positioned in the first pocket and the second material positioned in the second pocket can control the neutral axis of the foldable device and/or foldable substrate location, which may reduce (eg, mitigate, eliminate) the occurrence of mechanical instability, equipment fatigue, and/or equipment failure.

在一些實施例中,如在第2圖及第4圖中展示,可折疊設備101及401可包含離型襯裡271,但在另外實施例中可使用其他基板(例如,貫穿本申請論述的基於玻璃之基板及/或基於陶瓷之基板),而非圖示之離型襯裡271。在另外實施例中,如所展示,離型襯裡271或另一基板可安置於黏著層261上。在更另外實施例中,如所展示,離型襯裡271或另一基板可直接接觸黏著層261之第二接觸表面265。離型襯裡271或另一基板可包含一第一主表面273及與第一主表面273相對之一第二主表面275。如所展示,藉由將黏著層261之第二接觸表面265附著至離型襯裡271之第一主表面273或另一基板,離型襯裡271或另一基板可安置於黏著層261上。在一些實施例中,如所展示,離型襯裡271之第一主表面273或另一基板可包含一平坦表面。在一些實施例中,如所展示,離型襯裡271之第二主表面275或另一基板包含一平坦表面。包含離型襯裡271之基板可包含紙及/或聚合物。紙之例示性實施例包含牛皮紙、機制加工紙、聚塗佈之紙(例如,聚合物塗佈紙、玻璃紙、矽酮處理紙)或黏土塗佈紙。聚合物之例示性實施例包含聚酯(例如,聚對苯二甲酸乙二酯(polyethylene terephthalate;PET))及聚烯烴(例如,低密度聚乙烯(low-density polyethylene;LDPE)、高密度聚乙烯(high-density polyethylene;HDPE)、聚丙烯(polypropylene;PP))。In some embodiments, as shown in Figures 2 and 4, foldable devices 101 and 401 may include release liners 271, although other substrates may be used in other embodiments (eg, based on the glass substrates and/or ceramic-based substrates) instead of the release liner 271 shown. In further embodiments, as shown, a release liner 271 or another substrate may be disposed on the adhesive layer 261 . In still further embodiments, as shown, the release liner 271 or another substrate may directly contact the second contact surface 265 of the adhesive layer 261 . The release liner 271 or another substrate may include a first major surface 273 and a second major surface 275 opposite the first major surface 273 . As shown, the release liner 271 or another substrate may be disposed on the adhesive layer 261 by attaching the second contact surface 265 of the adhesive layer 261 to the first major surface 273 of the release liner 271 or another substrate. In some embodiments, as shown, the first major surface 273 of the release liner 271 or another substrate may include a flat surface. In some embodiments, as shown, the second major surface 275 of the release liner 271 or another substrate includes a flat surface. The substrate including the release liner 271 may include paper and/or polymer. Exemplary examples of paper include kraft paper, machine-finished paper, poly-coated paper (eg, polymer-coated paper, cellophane, silicone-treated paper), or clay-coated paper. Exemplary examples of polymers include polyesters (eg, polyethylene terephthalate (PET)) and polyolefins (eg, low-density polyethylene (LDPE), high density polyethylene Ethylene (high-density polyethylene; HDPE), polypropylene (polypropylene; PP)).

在一些實施例中,如在第3圖、第5圖及第12圖中展示,可折疊設備301、501及1201可包含顯示裝置307。在另外實施例中,如所展示,顯示裝置307可安置於黏著層261上。在另外實施例中,如所展示,顯示裝置307可接觸黏著層261之第二接觸表面265。在一些實施例中,生產類似於可折疊設備301、501或1201之一可折疊設備可藉由移除第2圖及第4圖之可折疊設備101或401之離型襯裡271且將顯示裝置307附著至黏著層261之第二接觸表面265來達成。替代地,在將顯示裝置307附著至黏著層261之第二接觸表面265前,可在無移除離型襯裡271之附加步驟的情況下生產可折疊設備301,例如,當未將離型襯裡271塗覆至黏著層261之第二接觸表面265時。顯示裝置307可包含一第一主表面303及與第一主表面303相對之一第二主表面305。如所展示,藉由將黏著層261之第二接觸表面265附著至顯示裝置307之第二主表面305,顯示裝置307可安置於黏著層261上。在一些實施例中,如所展示,顯示裝置307之第一主表面303可包含一平坦表面。在一些實施例中,如所展示,顯示裝置307之第一主表面303可包含一平坦表面。顯示裝置307可包含液晶顯示器(liquid crystal display;LCD)、電泳顯示器(electrophoretic display;EPD)、有機發光二極體顯示器(organic light emitting diode display;OLED)或電漿顯示面板(plasma display panel;PDP)。在一些實施例中,顯示裝置307可為攜帶型電子裝置之部分,例如,消費型電子產品、智慧型電話、平板電腦、可佩戴裝置或膝上型電腦。In some embodiments, as shown in FIGS. 3 , 5 , and 12 , foldable devices 301 , 501 , and 1201 may include a display device 307 . In further embodiments, the display device 307 may be disposed on the adhesive layer 261 as shown. In further embodiments, as shown, the display device 307 may contact the second contact surface 265 of the adhesive layer 261 . In some embodiments, a foldable device similar to foldable device 301, 501 or 1201 can be produced by removing the release liner 271 of the foldable device 101 or 401 of FIGS. 2 and 4 and placing the display device This is achieved by attaching 307 to the second contact surface 265 of the adhesive layer 261 . Alternatively, the foldable device 301 may be produced without the additional step of removing the release liner 271 prior to attaching the display device 307 to the second contact surface 265 of the adhesive layer 261, eg, when the release liner is not 271 is applied to the second contact surface 265 of the adhesive layer 261 . The display device 307 may include a first main surface 303 and a second main surface 305 opposite to the first main surface 303 . As shown, the display device 307 may be disposed on the adhesive layer 261 by attaching the second contact surface 265 of the adhesive layer 261 to the second major surface 305 of the display device 307 . In some embodiments, as shown, the first major surface 303 of the display device 307 may comprise a flat surface. In some embodiments, as shown, the first major surface 303 of the display device 307 may comprise a flat surface. The display device 307 may include a liquid crystal display (LCD), an electrophoretic display (EPD), an organic light emitting diode display (OLED), or a plasma display panel (PDP) ). In some embodiments, the display device 307 may be part of a portable electronic device, such as a consumer electronic product, a smart phone, a tablet, a wearable device, or a laptop.

本揭露內容之實施例可包含一消費型電子產品。該消費型電子產品可包含一前表面、一後表面及側表面。該消費型電子產品可進一步包含至少部分在該外殼內之電組件。該等電組件可包含一控制器、一記憶體及一顯示器。該顯示器可處於或鄰近該外殼之該前表面。該消費型電子產品可包含安置於顯示器上之一蓋基板。在一些實施例中,外殼之一部分或蓋基板中之至少一者包含貫穿本揭露內容論述之可折疊設備。Embodiments of the present disclosure may include a consumer electronic product. The consumer electronic product may include a front surface, a rear surface and side surfaces. The consumer electronic product may further include electrical components at least partially within the housing. The electrical components may include a controller, a memory, and a display. The display may be at or adjacent to the front surface of the housing. The consumer electronic product may include a cover substrate disposed over the display. In some embodiments, at least one of a portion of the housing or the cover substrate includes a foldable device as discussed throughout this disclosure.

本文中揭露之可折疊設備可併入至另一物件內,例如,具有一顯示器之物件(或顯示物件)(例如,消費者電子器件,包括行動電話、平板電腦、電腦、導航系統、可佩戴裝置(例如,手錶)及類似者)、建築物件、交通物件(例如,汽車、火車、飛機、海輪等)、電器物件,或可受益於某一透明度、耐刮擦性、耐磨性或其組合之任一物件。併有本文中揭露之可折疊設備中之任何者之一例示性物件展示於第13圖至第14圖中。具體言之,第13圖至第14圖展示一消費型電子裝置1300,該消費型電子裝置包括:一外殼1302,其具有前表面1304、後表面1306及側表面1308;電組件(未展示),其至少部分在外殼內部或全部在外殼內,且至少包括一控制器、一記憶體及在外殼之前表面處或鄰近外殼之前表面的一顯示器1310;及一蓋基板1312,其在外殼之前表面處或上,使得其在顯示器上。在一些實施例中,蓋基板1312或外殼1302之一部分中之至少一者可包括本文中揭露的可折疊設備中之任一者,例如,可折疊基板。The foldable devices disclosed herein can be incorporated into another article, such as an article (or display article) having a display (eg, consumer electronics including mobile phones, tablets, computers, navigation systems, wearables devices (eg, watches, and the like), building items, transportation items (eg, cars, trains, airplanes, marine vessels, etc.), electrical items, or that may benefit from a certain degree of transparency, scratch resistance, abrasion resistance, or any of its combinations. An exemplary item in conjunction with any of the foldable devices disclosed herein is shown in FIGS. 13-14. Specifically, FIGS. 13-14 show a consumer electronic device 1300 including: a housing 1302 having a front surface 1304, a rear surface 1306 and a side surface 1308; electrical components (not shown) , which is at least partially or wholly within the housing and includes at least a controller, a memory, and a display 1310 at or adjacent to the front surface of the housing; and a cover substrate 1312 on the front surface of the housing at or on so that it is on the display. In some embodiments, at least one of the cover substrate 1312 or a portion of the housing 1302 can include any of the foldable devices disclosed herein, eg, a foldable substrate.

在一些實施例中,可折疊基板206、407或807可包含一基於玻璃之基板及/或一基於陶瓷之基板,且第一部分221、421或821、第二部分231、431或831及/或中心部分281、481或881可包含一或多個壓縮應力區域。在一些實施例中,可藉由化學強化來產生一壓縮應力區域。化學強化可包含離子交換製程,其中在一表面層中之離子由具有相同價或氧化狀態之較大離子替換,或與該等較大離子交換。稍後將論述化學強化之方法。並不希望受到理論約束,化學強化第一部分221、421或821、第二部分231、431或831及/或中心部分281、481或881可實現良好抗衝擊性及/或抗刺紮性(例如,抵抗對於約15公分(cm)或更大、約20 cm或更大、約50 cm或更大之筆掉落高度的破壞)。並不希望受到理論約束,化學強化第一部分221、421或821、第二部分231、431或831及/或中心部分281、481或881可實現小(例如,小於約10 mm或更小)彎曲半徑,因為來自化學強化之壓縮應力可抵消在基板之最外表面上的彎曲誘發拉伸應力。壓縮應力區域可延伸至第一部分及/或第二部分之一部分內,達叫作壓縮深度之一深度。如本文中使用,壓縮深度意謂本文中描述之經化學強化基板及/或部分中之應力自壓縮應力改變至拉伸應力之深度。取決於離子交換處理及正量測的物件之厚度,壓縮深度可藉由表面應力計或散射光偏光鏡(scattered light polariscope;SCALP,其中本文中報告之值係使用由愛沙尼亞Glasstress公司製造之SCALP-5產生)來量則。在基板及/或部分中之應力係藉由交換鉀離子至基板內來產生之情況下,使用表面應力計(例如,FSM-6000(Orihara工業株式會社(日本)))來量測壓縮深度。除非另有指定,否則使用由Orihara製造之市售器具(例如,FSM-6000),藉由表面應力計(surface stress meter;FSM)來量測壓縮應力(包括表面CS)。表面應力量測結果依賴於與玻璃之雙折射有關的應力光學係數(stress optical coefficient;SOC)之準確量測。除非另有指定,否則SOC係根據在題為「Standard Test Method for Measurement of Glass Stress-Optical Coefficient」之ASTM標準C770-16中描述之程序C(玻璃碟方法)來量測,該標準之內容被以引用的方式全部併入本文中。在藉由交換鈉離子至基板內來產生應力且正量測之物件厚於約400 µm之情況下,使用SCALP來量測壓縮深度及中心張力(central tension;CT)。在基板及/或部分中之應力係藉由交換鉀及鈉離子兩者至基板及/或部分內產生且正量測之物件厚於約400 µm之情況下,壓縮深度及CT係藉由SCALP量測。並不希望受到理論約束,鈉之交換深度可指示壓縮深度,而鉀離子之交換深度可指示壓縮應力之量值之改變(而非應力自壓縮至拉伸之改變)。折射近場(refracted near-field;RNF;RNF方法描述於題為「Systems and methods for measuring a profile characteristic of a glass sample」之美國專利第8,854,623號中,該專利被以引用的方式全部併入本文中)方法亦可用來導出應力分佈之圖形表示。當利用RNF方法來導出應力分佈之圖形表示時,在RNF方法中利用由SCALP提供之最大中心張力值。藉由RNF導出的應力分佈之圖形表示經與由SCALP量測提供之最大中心張力值力平衡及校準。如本文中使用,「層深度」(depth of layer;DOL)意謂離子已交換至基板及/或部分內(例如,鈉、鉀)之深度。經由本揭露內容,當最大中心張力不能直接藉由SCALP量測時(如當正量測之物件薄於約400 µm時),可藉由最大壓縮應力與由基板之厚度與兩倍壓縮深度之間的差相除的壓縮深度之乘積來估算最大中心張力,其中壓縮應力及壓縮深度係藉由FSM量測。In some embodiments, the foldable substrate 206, 407, or 807 may comprise a glass-based substrate and/or a ceramic-based substrate, and the first portion 221, 421, or 821, the second portion 231, 431, or 831, and/or The central portion 281, 481 or 881 may contain one or more regions of compressive stress. In some embodiments, a region of compressive stress can be created by chemical strengthening. Chemical strengthening may include an ion exchange process in which ions in a surface layer are replaced by, or exchanged with, larger ions of the same valence or oxidation state. Methods of chemical strengthening will be discussed later. Without wishing to be bound by theory, chemically strengthening the first portion 221 , 421 or 821 , the second portion 231 , 431 or 831 and/or the central portion 281 , 481 or 881 may achieve good impact and/or puncture resistance (eg , resistant to damage to a drop height of about 15 centimeters (cm) or more, about 20 cm or more, and about 50 cm or more). Without wishing to be bound by theory, chemically strengthening the first portion 221 , 421 or 821 , the second portion 231 , 431 or 831 and/or the central portion 281 , 481 or 881 can achieve small (eg, less than about 10 mm or less) bends radius, since compressive stress from chemical strengthening can counteract the bending-induced tensile stress on the outermost surface of the substrate. The region of compressive stress may extend into a portion of the first portion and/or the second portion to a depth known as the compressive depth. As used herein, compressive depth means the depth at which the stress in the chemically strengthened substrates and/or portions described herein changes from compressive stress to tensile stress. Depending on the ion-exchange treatment and the thickness of the object being measured, the compression depth can be measured by means of a surface stress meter or a scattered light polariscope (SCALP, where the values reported in this paper are using a SCALP- 5) to the amount is. In cases where stress in the substrate and/or portion is generated by exchanging potassium ions into the substrate, a surface stress meter (eg, FSM-6000 (Orihara Industries, Ltd. (Japan))) is used to measure the compression depth. Unless otherwise specified, compressive stress (including surface CS) was measured by a surface stress meter (FSM) using a commercially available instrument manufactured by Orihara (eg, FSM-6000). Surface stress measurements rely on accurate measurements of the stress optical coefficient (SOC) related to the birefringence of the glass. Unless otherwise specified, SOC is measured according to Procedure C (Glass Disk Method) described in ASTM Standard C770-16 entitled "Standard Test Method for Measurement of Glass Stress-Optical Coefficient", the contents of which are Incorporated herein by reference in its entirety. SCALP was used to measure compression depth and central tension (CT) with stress generated by the exchange of sodium ions into the substrate and the object being measured was thicker than about 400 µm. Where the stress in the substrate and/or section is generated by exchanging both potassium and sodium ions into the substrate and/or section and the object being measured is thicker than about 400 µm, the compression depth and CT are determined by SCALP Measure. Without wishing to be bound by theory, the exchange depth of sodium may indicate the depth of compression, while the depth of exchange of potassium ions may indicate a change in the magnitude of compressive stress (rather than a change in stress from compression to tension). The refracted near-field (RNF; RNF method is described in US Pat. No. 8,854,623, entitled "Systems and methods for measuring a profile characteristic of a glass sample," which is incorporated herein by reference in its entirety ) method can also be used to derive a graphical representation of the stress distribution. When using the RNF method to derive a graphical representation of the stress distribution, the maximum central tension value provided by SCALP is used in the RNF method. The graphical representation of the stress distribution derived by the RNF is force balanced and calibrated with the maximum central tension value provided by the SCALP measurement. As used herein, "depth of layer" (DOL) means the depth to which ions have been exchanged into a substrate and/or moiety (eg, sodium, potassium). Through the present disclosure, when the maximum central tension cannot be directly measured by SCALP (such as when the object being measured is thinner than about 400 µm), the maximum compressive stress can be measured by the difference between the thickness of the substrate and twice the depth of compression. The maximum central tension is estimated by dividing the difference between compressive stress and the compression depth by the product of the compression depth measured by the FSM.

在一些實施例中,包含基於玻璃之部分及/或基於陶瓷之部分的第一部分221、421或821可包含在第一表面區223、423或823處之一第一壓縮應力區域,其可自第一表面區223、432或823延伸至第一壓縮深度。在一些實施例中,包含第一基於玻璃及/或基於陶瓷之部分的第一部分221、421或821可包含在第二表面區225、425或825處之一第二壓縮應力區域,其可自第二表面區225、425或825延伸至第二壓縮深度。在一些實施例中,作為基板厚度211、411或811之一百分比的第一壓縮深度及/或第二壓縮深度可為約1%或更大、約5%或更大、約10%或更大、約30%或更小、約25%或更小或約20%或更小。在一些實施例中,作為基板厚度211、411或811之一百分比的第一壓縮深度及/或第二壓縮深度可在自約1%至約30%、自約5%至約30%、自約5%至約25%、自約5%至約20%、自約10%至約30%、自約10%至約25%、自約10%至約20%之一範圍或其間之任一範圍或子範圍中。在另外實施例中,作為基板厚度211、411或811之一百分比的第一壓縮深度及/或第二壓縮深度可為約10%或更小,例如,自約1%至約10%、自約1%至約8%、自約3%至約8%、自約5%至約8%,或其間之任一範圍或子範圍。In some embodiments, the first portion 221 , 421 or 821 including the glass-based portion and/or the ceramic-based portion may include a first region of compressive stress at the first surface region 223 , 423 or 823 , which may be free from The first surface region 223, 432 or 823 extends to the first compression depth. In some embodiments, the first portion 221 , 421 or 821 including the first glass-based and/or ceramic-based portion can include a second compressive stress region at the second surface region 225 , 425 or 825 , which can be obtained from The second surface region 225, 425 or 825 extends to the second compression depth. In some embodiments, the first depth of compression and/or the second depth of compression as a percentage of substrate thickness 211 , 411 or 811 may be about 1% or more, about 5% or more, about 10% or more greater, about 30% or less, about 25% or less, or about 20% or less. In some embodiments, the first depth of compression and/or the second depth of compression, as a percentage of substrate thickness 211, 411 or 811, may range from about 1% to about 30%, from about 5% to about 30%, from A range from about 5% to about 25%, from about 5% to about 20%, from about 10% to about 30%, from about 10% to about 25%, from about 10% to about 20%, or any between in a range or sub-range. In further embodiments, the first depth of compression and/or the second depth of compression as a percentage of substrate thickness 211, 411 or 811 may be about 10% or less, eg, from about 1% to about 10%, from about 1% to about 10%. From about 1% to about 8%, from about 3% to about 8%, from about 5% to about 8%, or any range or subrange therebetween.

在另外實施例中,第一壓縮深度可實質上等於第二壓縮深度。在一些實施例中,第一壓縮深度及/或第二壓縮深度可為約1 μm或更大、約10 μm或更大、約30 μm或更大、約50 μm或更大、約200 μm或更小、約150 μm或更小、約100 μm或更小或約60 μm或更小。在一些實施例中,第一壓縮深度及/或第二壓縮深度可在自約1 µm至約200 µm、自約1 µm至約150 µm、自約10 µm至約150 µm、自約10 µm至約100 µm、自約30 µm至約100 µm、自約30 µm至約60 µm、自約50 µm至約60 µm之一範圍或其間之任一範圍或子範圍中。藉由提供包含第一基於玻璃及/或基於陶瓷之部分(包含在自第一厚度之約1%至約30%之一範圍中的一第一壓縮深度及/或一第二壓縮深度)的一第一部分,可實現良好抗衝擊性及/或抗刺紮性。In further embodiments, the first compression depth may be substantially equal to the second compression depth. In some embodiments, the first compression depth and/or the second compression depth can be about 1 μm or more, about 10 μm or more, about 30 μm or more, about 50 μm or more, about 200 μm or less, about 150 μm or less, about 100 μm or less, or about 60 μm or less. In some embodiments, the first compression depth and/or the second compression depth may range from about 1 μm to about 200 μm, from about 1 μm to about 150 μm, from about 10 μm to about 150 μm, from about 10 μm to about 100 µm, from about 30 µm to about 100 µm, from about 30 µm to about 60 µm, from about 50 µm to about 60 µm, or any range or sub-range therebetween. by providing a first depth of compression and/or a second depth of compression comprising the first glass-based and/or ceramic-based portion including a first depth of compression and/or a second depth of compression in a range from about 1% to about 30% of the A first part that achieves good impact resistance and/or puncture resistance.

在一些實施例中,第一壓縮應力區域可包含一第一最大壓縮應力。在一些實施例中,第二壓縮應力區域可包含一第二最大壓縮應力。在另外實施例中,第一最大壓縮應力及/或第二最大壓縮應力可為約100兆帕斯卡(MPa)或更大、約300 MPa或更大、約500 MPa或更大、約600 MPa或更大、約700 MPa或更大、約1,500 MPa或更小、約1,200 MPa或更小、約1,000 MPa或更小或約800 MPa或更小。在另外實施例中,第一最大壓縮應力及/或第二最大壓縮應力可在自約100 MPa至約1,500 MPa、自約100 MPa至約1,200 MPa、自約300 MPa至約1,200 MPa、自約300 MPa至約1,000 MPa、自約500 MPa至約1,000 MPa、自約600 MPa至約1,000 MPa、自約600 MPa至約1,000 MPa、自約700 MPa至約1,000 MPa、自約700 MPa至約800 MPa之一範圍或其間之任一範圍或子範圍中。藉由提供在自約100 MPa至約1,500 MPa之一範圍中的第一最大壓縮應力及/或第二最大壓縮應力,可實現良好抗衝擊性及/或抗刺紮性。In some embodiments, the first region of compressive stress may include a first maximum compressive stress. In some embodiments, the second region of compressive stress may include a second maximum compressive stress. In further embodiments, the first maximum compressive stress and/or the second maximum compressive stress may be about 100 megapascals (MPa) or more, about 300 MPa or more, about 500 MPa or more, about 600 MPa or more Greater, about 700 MPa or more, about 1,500 MPa or less, about 1,200 MPa or less, about 1,000 MPa or less, or about 800 MPa or less. In further embodiments, the first maximum compressive stress and/or the second maximum compressive stress may range from about 100 MPa to about 1,500 MPa, from about 100 MPa to about 1,200 MPa, from about 300 MPa to about 1,200 MPa, from about 300 MPa to about 1,000 MPa, from about 500 MPa to about 1,000 MPa, from about 600 MPa to about 1,000 MPa, from about 600 MPa to about 1,000 MPa, from about 700 MPa to about 1,000 MPa, from about 700 MPa to about 800 MPa in one range or any range or sub-range therebetween. Good impact resistance and/or puncture resistance may be achieved by providing a first maximum compressive stress and/or a second maximum compressive stress in a range from about 100 MPa to about 1,500 MPa.

在一些實施例中,第一部分221、421或821可包含與第一壓縮應力區域及第一層深度相關聯的一或多種鹼金屬離子之第一層深度。在一些實施例中,第一部分221、421或821可包含與第二壓縮應力區域及第二層深度相關聯的一或多種鹼金屬離子之第二層深度。如本文中使用,一或多種鹼金屬離子之層深度之一或多種鹼金屬離子可包括鈉、鉀、銣、銫及/或鈁。在一些實施例中,一或多種鹼離子之第一層深度及/或一或多種鹼離子之第二層深度的一或多個鹼離子包含鉀。在一些實施例中,作為基板厚度211、411或811之一百分比的第一層深度及/或第二層深度可為約1%或更大、約5%或更大、約10%或更大、約40%或更小、約35%或更小、約30%或更小、約25%或更小或約20%或更小。在一些實施例中,作為基板厚度211、411或811之一百分比的第一層深度及/或第二層深度可在自約1%至約40%、自約1%至約35%、自約1%至約30%、自約1%至約25%、自約1%至約20%、自約5%至約30%、自約5%至約25%、自約5%至約20%、自約10%至約30%、自約10%至約25%、自約10%至約20%之一範圍或其間之任一範圍或子範圍中。在另外實施例中,作為基板厚度211、411或811之一百分比的一或多種鹼金屬離子之第一層深度及/或一或多種鹼金屬離子之第二層深度可為約10%或更小,例如,自約1%至約10%、自約1%至約8%、自約3%至約8%、自約5%至約8%,或其間之任一範圍或子範圍。在一些實施例中,一或多種鹼金屬離子之第一層深度及/或一或多種鹼金屬離子之第二層深度可為約1 μm或更大、約10 μm或更大、約30 μm或更大、約50 μm或更大、約200 μm或更小、約150 μm或更小、約100 μm或更小或約60 μm或更小。在一些實施例中,一或多種鹼金屬離子之第一層深度及/或一或多種鹼金屬離子之第二層深度可在自約1 µm至約200 µm、自約1 µm至約150 µm、自約10 µm至約150 µm、自約10 µm至約100 µm、自約30 µm至約100 µm、自約30 µm至約60 µm、自約50 µm至約60 µm之一範圍或其間之任一範圍或子範圍中。In some embodiments, the first portion 221, 421, or 821 may include a first layer depth of one or more alkali metal ions associated with the first compressive stress region and the first layer depth. In some embodiments, the first portion 221, 421 or 821 may include a second layer depth of one or more alkali metal ions associated with the second compressive stress region and the second layer depth. As used herein, the layer depth of the one or more alkali metal ions can include sodium, potassium, rubidium, cesium, and/or francium. In some embodiments, the one or more alkali ions of the first layer depth of the one or more alkali ions and/or the one or more alkali ions of the second layer depth of the one or more alkali ions comprise potassium. In some embodiments, the depth of the first layer and/or the depth of the second layer as a percentage of the substrate thickness 211 , 411 or 811 may be about 1% or more, about 5% or more, about 10% or more greater, about 40% or less, about 35% or less, about 30% or less, about 25% or less, or about 20% or less. In some embodiments, the depth of the first layer and/or the depth of the second layer as a percentage of the substrate thickness 211, 411 or 811 may be from about 1% to about 40%, from about 1% to about 35%, from from about 1% to about 30%, from about 1% to about 25%, from about 1% to about 20%, from about 5% to about 30%, from about 5% to about 25%, from about 5% to about 20%, from about 10% to about 30%, from about 10% to about 25%, from about 10% to about 20%, or any range or sub-range therebetween. In further embodiments, the depth of the first layer of the one or more alkali metal ions and/or the depth of the second layer of the one or more alkali metal ions as a percentage of the substrate thickness 211, 411 or 811 may be about 10% or more Small, for example, from about 1% to about 10%, from about 1% to about 8%, from about 3% to about 8%, from about 5% to about 8%, or any range or subrange therebetween. In some embodiments, the depth of the first layer of the one or more alkali metal ions and/or the depth of the second layer of the one or more alkali metal ions may be about 1 μm or more, about 10 μm or more, about 30 μm or larger, about 50 μm or larger, about 200 μm or smaller, about 150 μm or smaller, about 100 μm or smaller, or about 60 μm or smaller. In some embodiments, the depth of the first layer of the one or more alkali metal ions and/or the depth of the second layer of the one or more alkali metal ions may be from about 1 μm to about 200 μm, from about 1 μm to about 150 μm , from about 10 µm to about 150 µm, from about 10 µm to about 100 µm, from about 30 µm to about 100 µm, from about 30 µm to about 60 µm, from about 50 µm to about 60 µm, or a range therebetween in any range or sub-range.

在一些實施例中,第一部分221、421或821可包含一第一拉伸應力區域。在一些實施例中,第一拉伸應力區域可定位於第一壓縮應力區域與第二壓縮應力區域之間。在一些實施例中,第一拉伸應力區域可包含一第一最大拉伸應力。在另外實施例中,第一最大拉伸應力可為約10 MPa或更大、約20 MPa或更大、約30 MPa或更大、約100 MPa或更小、約80 MPa或更小或約60 MPa或更小。在另外實施例中,第一最大拉伸應力可在自約10 MPa至約100 MPa、自約10 MPa至約80 MPa、自約10 MPa至約60 MPa、自約20 MPa至約100 MPa、自約20 MPa至約80 MPa、自約20 MPa至約60 MPa、自約30 MPa至約100 MPa、自約30 MPa至約80 MPa、自約30 MPa至約60 MPa之一範圍或其間之任一範圍或子範圍中。提供在自約10 MPa至約100 MPa之一範圍中的一第一最大拉伸應力可實現良好抗衝擊性及/或抗刺紮性,同時提供低能量破裂,如下所論述。In some embodiments, the first portion 221, 421 or 821 may include a first tensile stress region. In some embodiments, the first region of tensile stress may be positioned between the first region of compressive stress and the second region of compressive stress. In some embodiments, the first tensile stress region may include a first maximum tensile stress. In further embodiments, the first maximum tensile stress can be about 10 MPa or more, about 20 MPa or more, about 30 MPa or more, about 100 MPa or less, about 80 MPa or less or about 60 MPa or less. In further embodiments, the first maximum tensile stress may be in the range from about 10 MPa to about 100 MPa, from about 10 MPa to about 80 MPa, from about 10 MPa to about 60 MPa, from about 20 MPa to about 100 MPa, One range from about 20 MPa to about 80 MPa, from about 20 MPa to about 60 MPa, from about 30 MPa to about 100 MPa, from about 30 MPa to about 80 MPa, from about 30 MPa to about 60 MPa, or therebetween in any range or subrange. Providing a first maximum tensile stress in a range from about 10 MPa to about 100 MPa can achieve good impact and/or puncture resistance while providing low energy rupture, as discussed below.

在一些實施例中,第一部分221、421或821可包含以氧化物為基礎的第一平均鉀濃度。如本文中使用,「以氧化物為基礎」意謂如同化合物中之非氧組分經轉換成指定氧化物形式或完全氧化之氧化物(若未指定具體氧化物形式)來量測組分。舉例而言,以氧化物為基礎之鈉(Na)指就氧化鈉(Na2 O)而言之量,而氧化物為基礎之鉀指就氧化鉀(K2 O)而言之量。因而,組分不需要實際呈指定氧化物形式或呈完全氧化之氧化物形式,以便按「以氧化物為基礎」之量度來計數組分。因而,針對具體組分之「氧化物為基礎」的量測包含在概念上將包含具體組分之非氧元素的材料轉換成指定氧化物形式或完全氧化之氧化物(若在以氧化物為基礎計算濃度前未指定具體氧化物形式)。在一些實施例中,以氧化物為基礎的第一平均鉀濃度可為約百萬分之10(ppm)或更大、約50 ppm或更大、約200 ppm或更大、約500 ppm或更大、約1,000 ppm或更大、約2,000 ppm或更大、約300,000或更小、約100,000 ppm或更小、約50,000 ppm或更小、約20,000 ppm或更小、約10,000 ppm或更小或約5,000 ppm或更小。在一些實施例中,以氧化物為基礎的第一平均鉀濃度可在自約10 ppm至約300,000 ppm、自約50 ppm至約300,000 ppm、自約50 ppm至約100,000 ppm、自約200 ppm至約100,000 ppm、自約200 ppm至約50,000 ppm、自約500 ppm至約50,000 ppm、自約500 ppm至約20,000 ppm、自約1,000 ppm至約20,000 ppm、自約2,000 ppm至約10,000 ppm、自約2,000 ppm至約5,000 ppm之一範圍或其間之任一範圍或子範圍中。並不希望受到理論約束,平均鉀濃度包含經由化學強化引入之鉀及在原型可折疊基板中之鉀。In some embodiments, the first portion 221, 421 or 821 may comprise a first average potassium concentration on an oxide basis. As used herein, "oxide-based" means that a component is measured as if a non-oxygen component of the compound was converted to the specified oxide form or to a fully oxidized oxide if the specific oxide form is not specified. For example, oxide-based sodium (Na) refers to the amount in terms of sodium oxide (Na2O), and oxide-based potassium refers to the amount in terms of potassium oxide (K2O). Thus, the components need not actually be in the designated oxide form or in the fully oxidized oxide form in order to count the components on an "oxide-based" measure. Thus, an "oxide-based" measurement for a specific component involves the conceptual conversion of a material containing a specific component's non-oxygen element into the specified oxide form or fully oxidized oxide (if the oxide is used as the The specific oxide form is not specified before the base calculated concentration). In some embodiments, the first average potassium concentration on an oxide basis may be about 10 parts per million (ppm) or greater, about 50 ppm or greater, about 200 ppm or greater, about 500 ppm or greater. Greater, about 1,000 ppm or more, about 2,000 ppm or more, about 300,000 ppm or less, about 100,000 ppm or less, about 50,000 ppm or less, about 20,000 ppm or less, about 10,000 ppm or less or about 5,000 ppm or less. In some embodiments, the first average potassium concentration on an oxide basis may be from about 10 ppm to about 300,000 ppm, from about 50 ppm to about 300,000 ppm, from about 50 ppm to about 100,000 ppm, from about 200 ppm to about 100,000 ppm, from about 200 ppm to about 50,000 ppm, from about 500 ppm to about 50,000 ppm, from about 500 ppm to about 20,000 ppm, from about 1,000 ppm to about 20,000 ppm, from about 2,000 ppm to about 10,000 ppm, In a range from about 2,000 ppm to about 5,000 ppm or any range or sub-range therebetween. Without wishing to be bound by theory, the average potassium concentration included potassium introduced via chemical strengthening and potassium in the prototype foldable substrate.

在一些實施例中,包含第二基於玻璃及/或基於陶瓷之部分的第二部分231、431或831可包含在第三表面區233、433或833處之一第三壓縮應力區域,其可自第三表面區233、433或833延伸至第三壓縮深度。在一些實施例中,包含第二基於玻璃及/或基於陶瓷之部分的第二部分231、431或831可包含在第四表面區235、435或835處之一第四壓縮應力區域,其可自第四表面區235延伸至第四壓縮深度。在一些實施例中,作為基板厚度211、411或811之一百分比的第三壓縮深度及/或第四壓縮深度可為約1%或更大、約5%或更大、約10%或更大、約30%或更小、約25%或更小或約20%或更小。在一些實施例中,作為基板厚度211、411或811之一百分比的第三壓縮深度及/或第四壓縮深度可在自約1%至約30%、自約5%至約30%、自約5%至約25%、自約5%至約20%、自約10%至約30%、自約10%至約25%、自約10%至約20%之一範圍或其間之任一範圍或子範圍中。在另外實施例中,第三壓縮深度可實質上等於第四壓縮深度。在一些實施例中,第三壓縮深度及/或第四壓縮深度可為約1 μm或更大、約10 μm或更大、約30 μm或更大、約50 μm或更大、約200 μm或更小、約150 μm或更小、約100 μm或更小或約60 μm或更小。在一些實施例中,第三壓縮深度及/或第四壓縮深度可在自約1 µm至約200 µm、自約1 µm至約150 µm、自約10 µm至約150 µm、自約10 µm至約100 µm、自約30 µm至約100 µm、自約30 µm至約60 µm、自約50 µm至約60 µm之一範圍或其間之任一範圍或子範圍中。藉由提供包含基於玻璃及/或基於陶瓷之部分(包含在自基板厚度之約1%至約30%之一範圍中的一第三壓縮深度及/或一第四壓縮深度)的一第二部分,可實現良好抗衝擊性及/或抗刺紮性。In some embodiments, the second portion 231 , 431 or 831 including the second glass-based and/or ceramic-based portion may include a third region of compressive stress at the third surface region 233 , 433 or 833 , which may Extends from the third surface region 233, 433 or 833 to a third depth of compression. In some embodiments, the second portion 231 , 431 or 831 including the second glass-based and/or ceramic-based portion may include a fourth region of compressive stress at the fourth surface region 235 , 435 or 835 , which may Extends from the fourth surface region 235 to a fourth compression depth. In some embodiments, the third depth of compression and/or the fourth depth of compression as a percentage of substrate thickness 211 , 411 or 811 may be about 1% or more, about 5% or more, about 10% or more greater, about 30% or less, about 25% or less, or about 20% or less. In some embodiments, the third depth of compression and/or the fourth depth of compression as a percentage of the substrate thickness 211, 411 or 811 may be from about 1% to about 30%, from about 5% to about 30%, from A range from about 5% to about 25%, from about 5% to about 20%, from about 10% to about 30%, from about 10% to about 25%, from about 10% to about 20%, or any between in a range or sub-range. In further embodiments, the third compression depth may be substantially equal to the fourth compression depth. In some embodiments, the third compression depth and/or the fourth compression depth can be about 1 μm or more, about 10 μm or more, about 30 μm or more, about 50 μm or more, about 200 μm or less, about 150 μm or less, about 100 μm or less, or about 60 μm or less. In some embodiments, the third compression depth and/or the fourth compression depth may be from about 1 μm to about 200 μm, from about 1 μm to about 150 μm, from about 10 μm to about 150 μm, from about 10 μm to about 100 µm, from about 30 µm to about 100 µm, from about 30 µm to about 60 µm, from about 50 µm to about 60 µm, or any range or sub-range therebetween. By providing a second depth of compression comprising glass-based and/or ceramic-based portions including a third depth of compression and/or a fourth depth of compression in a range from about 1% to about 30% of the thickness of the substrate In part, good impact resistance and/or puncture resistance can be achieved.

在一些實施例中,第三壓縮應力區域可包含一第三最大壓縮應力。在一些實施例中,第四壓縮應力區域可包含一第四最大壓縮應力。在另外實施例中,第三最大壓縮應力及/或第四最大壓縮應力可為約100兆帕斯卡(MPa)或更大、約300 MPa或更大、約500 MPa或更大、約600 MPa或更大、約700 MPa或更大、約1,500 MPa或更小、約1,200 MPa或更小、約1,000 MPa或更小或約800 MPa或更小。在另外實施例中,第三最大壓縮應力及/或第四最大壓縮應力可在自約100 MPa至約1,500 MPa、自約100 MPa至約1,200 MPa、自約300 MPa至約1,200 MPa、自約300 MPa至約1,000 MPa、自約500 MPa至約1,000 MPa、自約600 MPa至約1,000 MPa、自約600 MPa至約1,000 MPa、自約700 MPa至約1,000 MPa、自約700 MPa至約800 MPa之一範圍或其間之任一範圍或子範圍中。藉由提供在自約100 MPa至約1,500 MPa之一範圍中的第三最大壓縮應力及/或第四最大壓縮應力,可實現良好抗衝擊性及/或抗刺紮性。In some embodiments, the third region of compressive stress may include a third maximum compressive stress. In some embodiments, the fourth region of compressive stress may include a fourth maximum compressive stress. In further embodiments, the third maximum compressive stress and/or the fourth maximum compressive stress may be about 100 megapascals (MPa) or more, about 300 MPa or more, about 500 MPa or more, about 600 MPa or more Greater, about 700 MPa or more, about 1,500 MPa or less, about 1,200 MPa or less, about 1,000 MPa or less, or about 800 MPa or less. In further embodiments, the third maximum compressive stress and/or the fourth maximum compressive stress may range from about 100 MPa to about 1,500 MPa, from about 100 MPa to about 1,200 MPa, from about 300 MPa to about 1,200 MPa, from about 300 MPa to about 1,000 MPa, from about 500 MPa to about 1,000 MPa, from about 600 MPa to about 1,000 MPa, from about 600 MPa to about 1,000 MPa, from about 700 MPa to about 1,000 MPa, from about 700 MPa to about 800 MPa in one range or any range or sub-range therebetween. Good impact resistance and/or puncture resistance may be achieved by providing a third maximum compressive stress and/or a fourth maximum compressive stress in a range from about 100 MPa to about 1,500 MPa.

在一些實施例中,第二部分231、431或831可包含與第三壓縮應力區域及第三層深度相關聯的一或多種鹼金屬離子之第三層深度。在一些實施例中,第二部分231可包含與第四壓縮應力區域及第四壓縮深度相關聯的一或多種鹼金屬離子之第四層深度。在一些實施例中,一或多種鹼離子之第三層深度及/或一或多種鹼離子之第四層深度的一或多個鹼離子包含鉀。在一些實施例中,作為基板厚度211、411或811之一百分比的第三層深度及/或第四層深度可為約1%或更大、約5%或更大、約10%或更大、約40%或更小、約35%或更小、約30%或更小、約25%或更小或約20%或更小。在一些實施例中,作為基板厚度211、411或811之一百分比的第三壓縮深度及/或第四壓縮深度可在自約1%至約40%、自約1%至約35%、自約1%至約30%、自約1%至約25%、自約1%至約20%、自約5%至約30%、自約5%至約25%、自約5%至約20%、自約10%至約30%、自約10%至約25%、自約10%至約20%之一範圍或其間之任一範圍或子範圍中。在另外實施例中,作為基板厚度211、411或811之一百分比的一或多種鹼金屬離子之第三層深度及/或一或多種鹼金屬離子之第四層深度可為約10%或更小,例如,自約1%至約10%、自約1%至約8%、自約3%至約8%、自約5%至約8%,或其間之任一範圍或子範圍。在一些實施例中,一或多種鹼金屬離子之第三層深度及/或一或多種鹼金屬離子之第四層深度可為約1 μm或更大、約10 μm或更大、約30 μm或更大、約50 μm或更大、約200 μm或更小、約150 μm或更小、約100 μm或更小或約60 μm或更小。在一些實施例中,一或多種鹼金屬離子之第三層深度及/或一或多種鹼金屬離子之第四層深度可在自約1 µm至約200 µm、自約1 µm至約150 µm、自約10 µm至約150 µm、自約10 µm至約100 µm、自約30 µm至約100 µm、自約30 µm至約60 µm、自約50 µm至約60 µm之一範圍或其間之任一範圍或子範圍中。In some embodiments, the second portion 231, 431 or 831 may include a third layer depth of one or more alkali metal ions associated with the third compressive stress region and the third layer depth. In some embodiments, the second portion 231 may include a fourth layer depth of one or more alkali metal ions associated with a fourth region of compressive stress and a fourth depth of compression. In some embodiments, the one or more alkali ions at the third layer depth and/or the one or more alkali ions at the fourth layer depth comprise potassium. In some embodiments, the depth of the third layer and/or the depth of the fourth layer as a percentage of the substrate thickness 211 , 411 or 811 may be about 1% or more, about 5% or more, about 10% or more greater, about 40% or less, about 35% or less, about 30% or less, about 25% or less, or about 20% or less. In some embodiments, the third depth of compression and/or the fourth depth of compression as a percentage of the substrate thickness 211, 411 or 811 may be from about 1% to about 40%, from about 1% to about 35%, from from about 1% to about 30%, from about 1% to about 25%, from about 1% to about 20%, from about 5% to about 30%, from about 5% to about 25%, from about 5% to about 20%, from about 10% to about 30%, from about 10% to about 25%, from about 10% to about 20%, or any range or sub-range therebetween. In further embodiments, the depth of the third layer of the one or more alkali metal ions and/or the depth of the fourth layer of the one or more alkali metal ions as a percentage of the substrate thickness 211, 411 or 811 may be about 10% or more Small, for example, from about 1% to about 10%, from about 1% to about 8%, from about 3% to about 8%, from about 5% to about 8%, or any range or subrange therebetween. In some embodiments, the depth of the third layer of the one or more alkali metal ions and/or the depth of the fourth layer of the one or more alkali metal ions may be about 1 μm or more, about 10 μm or more, about 30 μm or larger, about 50 μm or larger, about 200 μm or smaller, about 150 μm or smaller, about 100 μm or smaller, or about 60 μm or smaller. In some embodiments, the depth of the third layer of the one or more alkali metal ions and/or the depth of the fourth layer of the one or more alkali metal ions may be from about 1 μm to about 200 μm, from about 1 μm to about 150 μm , from about 10 µm to about 150 µm, from about 10 µm to about 100 µm, from about 30 µm to about 100 µm, from about 30 µm to about 60 µm, from about 50 µm to about 60 µm, or a range therebetween in any range or sub-range.

在一些實施例中,第二部分231、431或831可包含一第二拉伸應力區域。在一些實施例中,第二拉伸應力區域可定位於第三壓縮應力區域與第四壓縮應力區域之間。在一些實施例中,第二拉伸應力區域可包含一第二最大拉伸應力。在另外實施例中,第二最大拉伸應力可為約10 MPa或更大、約20 MPa或更大、約30 MPa或更大、約100 MPa或更小、約80 MPa或更小或約60 MPa或更小。在另外實施例中,第二最大拉伸應力可在自約10 MPa至約100 MPa、自約10 MPa至約80 MPa、自約10 MPa至約60 MPa、自約20 MPa至約100 MPa、自約20 MPa至約80 MPa、自約20 MPa至約60 MPa、自約30 MPa至約100 MPa、自約30 MPa至約80 MPa、自約30 MPa至約60 MPa之一範圍或其間之任一範圍或子範圍中。提供在自約10 MPa至約100 MPa之一範圍中的一第二最大拉伸應力可實現良好抗衝擊性及/或抗刺紮性,同時提供低能量破裂,如下所論述。In some embodiments, the second portion 231, 431 or 831 may include a second tensile stress region. In some embodiments, the second region of tensile stress may be positioned between the third region of compressive stress and the fourth region of compressive stress. In some embodiments, the second tensile stress region may include a second maximum tensile stress. In further embodiments, the second maximum tensile stress may be about 10 MPa or more, about 20 MPa or more, about 30 MPa or more, about 100 MPa or less, about 80 MPa or less or about 60 MPa or less. In further embodiments, the second maximum tensile stress may be in the range from about 10 MPa to about 100 MPa, from about 10 MPa to about 80 MPa, from about 10 MPa to about 60 MPa, from about 20 MPa to about 100 MPa, One range from about 20 MPa to about 80 MPa, from about 20 MPa to about 60 MPa, from about 30 MPa to about 100 MPa, from about 30 MPa to about 80 MPa, from about 30 MPa to about 60 MPa, or therebetween in any range or subrange. Providing a second maximum tensile stress in a range from about 10 MPa to about 100 MPa can achieve good impact and/or puncture resistance while providing low energy rupture, as discussed below.

在一些實施例中,第二部分231、431或831可包含以氧化物為基礎的第二平均鉀濃度。在一些實施例中,以氧化物為基礎的第二平均鉀濃度可為約百萬分之10(ppm)或更大、約50 ppm或更大、約200 ppm或更大、約500 ppm或更大、約1,000 ppm或更大、約2,000 ppm或更大、約300,000或更小、約100,000 ppm或更小、約50,000 ppm或更小、約20,000 ppm或更小、約10,000 ppm或更小或約5,000 ppm或更小。在一些實施例中,以氧化物為基礎的第二平均鉀濃度可在自約10 ppm至約300,000 ppm、自約50 ppm至約300,000 ppm、自約50 ppm至約100,000 ppm、自約200 ppm至約100,000 ppm、自約200 ppm至約50,000 ppm、自約500 ppm至約50,000 ppm、自約500 ppm至約20,000 ppm、自約1,000 ppm至約20,000 ppm、自約2,000 ppm至約10,000 ppm、自約2,000 ppm至約5,000 ppm之一範圍或其間之任一範圍或子範圍中。In some embodiments, the second portion 231, 431 or 831 may comprise a second average potassium concentration on an oxide basis. In some embodiments, the second average potassium concentration on an oxide basis can be about 10 parts per million (ppm) or greater, about 50 ppm or greater, about 200 ppm or greater, about 500 ppm or greater. Greater, about 1,000 ppm or more, about 2,000 ppm or more, about 300,000 ppm or less, about 100,000 ppm or less, about 50,000 ppm or less, about 20,000 ppm or less, about 10,000 ppm or less or about 5,000 ppm or less. In some embodiments, the second average potassium concentration on an oxide basis may be from about 10 ppm to about 300,000 ppm, from about 50 ppm to about 300,000 ppm, from about 50 ppm to about 100,000 ppm, from about 200 ppm to about 100,000 ppm, from about 200 ppm to about 50,000 ppm, from about 500 ppm to about 50,000 ppm, from about 500 ppm to about 20,000 ppm, from about 1,000 ppm to about 20,000 ppm, from about 2,000 ppm to about 10,000 ppm, In a range from about 2,000 ppm to about 5,000 ppm, or any range or sub-range therebetween.

在一些實施例中,第一壓縮深度可實質上等於第三壓縮深度。在一些實施例中,第二壓縮深度可實質上等於第四壓縮深度。在一些實施例中,第一最大壓縮應力可實質上等於第三最大壓縮應力。在一些實施例中,第二最大壓縮應力可實質上等於第四最大壓縮應力。在一些實施例中,一或多種鹼金屬離子之第一層深度可實質上等於一或多種鹼金屬離子之第三層深度。在一些實施例中,一或多種鹼金屬離子之第二層深度可實質上等於一或多種鹼金屬離子之第四層深度。在一些實施例中,第一平均鉀濃度可實質上等於第二平均鉀濃度。In some embodiments, the first compression depth may be substantially equal to the third compression depth. In some embodiments, the second compression depth may be substantially equal to the fourth compression depth. In some embodiments, the first maximum compressive stress may be substantially equal to the third maximum compressive stress. In some embodiments, the second maximum compressive stress may be substantially equal to the fourth maximum compressive stress. In some embodiments, the depth of the first layer of the one or more alkali metal ions may be substantially equal to the depth of the third layer of the one or more alkali metal ions. In some embodiments, the depth of the second layer of the one or more alkali metal ions may be substantially equal to the depth of the fourth layer of the one or more alkali metal ions. In some embodiments, the first average potassium concentration may be substantially equal to the second average potassium concentration.

在一些實施例中,包含基於玻璃之部分及/或基於陶瓷之部分的中心部分281、481或881可包含在第一中心表面區209、409或809處之一第一中心壓縮應力區域,其可自第一中心表面區209、409或809延伸至第一中心壓縮深度。在一些實施例中,包含基於玻璃及/或基於陶瓷之部分的中心部分281、481或881可包含在第二中心表面區219、419或819處之一第二中心壓縮應力區域,其可自第二中心表面區219、419或819延伸至第二中心壓縮深度。在一些實施例中,作為中心厚度227、427或827之一百分比的第一中心壓縮深度及/或第二中心壓縮深度可為約1%或更大、約5%或更大、約10%或更大、約30%或更小、約25%或更小或約20%或更小。在一些實施例中,作為中心厚度227、427或827之一百分比的第一中心壓縮深度及/或第二中心壓縮深度可在自約1%至約30%、自約5%至約30%、自約5%至約25%、自約5%至約20%、自約10%至約30%、自約10%至約25%、自約10%至約20%之一範圍或其間之任一範圍或子範圍中。在另外實施例中,作為中心厚度227、427或827之一百分比的第一中心壓縮深度及/或第二中心壓縮深度可為約10%或更大,例如,自約10%至約30%、自約10%至約25%、自約15%至約25%、自約15%至約20%,或其間之任一範圍或子範圍。In some embodiments, the central portion 281 , 481 or 881 including the glass-based portion and/or the ceramic-based portion may include a first central compressive stress region at the first central surface region 209 , 409 or 809 , which Can extend from the first central surface region 209, 409 or 809 to a first central compression depth. In some embodiments, the central portion 281 , 481 or 881 including the glass-based and/or ceramic-based portion can include a second central compressive stress region at the second central surface region 219 , 419 or 819 , which can be The second central surface region 219, 419 or 819 extends to a second central compression depth. In some embodiments, the first central compression depth and/or the second central compression depth as a percentage of the central thickness 227, 427 or 827 may be about 1% or more, about 5% or more, about 10% or greater, about 30% or less, about 25% or less, or about 20% or less. In some embodiments, the first central compression depth and/or the second central compression depth as a percentage of the central thickness 227, 427 or 827 may be from about 1% to about 30%, from about 5% to about 30% , from about 5% to about 25%, from about 5% to about 20%, from about 10% to about 30%, from about 10% to about 25%, from about 10% to about 20% in a range or therebetween in any range or sub-range. In further embodiments, the first central compression depth and/or the second central compression depth as a percentage of the central thickness 227, 427 or 827 may be about 10% or greater, eg, from about 10% to about 30% , from about 10% to about 25%, from about 15% to about 25%, from about 15% to about 20%, or any range or subrange therebetween.

在另外實施例中,第一中心壓縮深度可實質上等於第二中心壓縮深度。在一些實施例中,第一中心壓縮深度及/或第二中心壓縮深度可為約1 μm或更大、約10 μm或更大、約30 μm或更大、約50 μm或更大、約200 μm或更小、約150 μm或更小、約100 μm或更小或約60 μm或更小。在一些實施例中,第一中心壓縮深度及/或第二中心壓縮深度可在自約1 µm至約200 µm、自約1 µm至約150 µm、自約10 µm至約150 µm、自約10 µm至約100 µm、自約30 µm至約100 µm、自約30 µm至約60 µm、自約50 µm至約60 µm之一範圍或其間之任一範圍或子範圍中。藉由提供包含基於玻璃及/或基於陶瓷之部分(包含在自中心厚度之約1%至約30%之一範圍中的一第一中心壓縮深度及/或一第二中心壓縮深度)的一中心部分,可實現良好抗衝擊性及/或抗刺紮性。In further embodiments, the first central compression depth may be substantially equal to the second central compression depth. In some embodiments, the first central compression depth and/or the second central compression depth may be about 1 μm or more, about 10 μm or more, about 30 μm or more, about 50 μm or more, about 200 μm or less, about 150 μm or less, about 100 μm or less, or about 60 μm or less. In some embodiments, the first central compression depth and/or the second central compression depth may range from about 1 μm to about 200 μm, from about 1 μm to about 150 μm, from about 10 μm to about 150 μm, from about In a range of 10 µm to about 100 µm, from about 30 µm to about 100 µm, from about 30 µm to about 60 µm, from about 50 µm to about 60 µm, or any range or sub-range therebetween. By providing a glass-based and/or ceramic-based portion comprising a first central compression depth and/or a second central compression depth in a range from about 1% to about 30% of the thickness of the center Center section for good impact and/or puncture resistance.

在一些實施例中,第一中心壓縮應力區域可包含一第一中心最大壓縮應力。在一些實施例中,第二中心壓縮應力區域可包含一第二中心最大壓縮應力。在另外實施例中,第一中心最大壓縮應力及/或第二中心最大壓縮應力可為約100兆帕斯卡(MPa)或更大、約300 MPa或更大、約500 MPa或更大、約600 MPa或更大、約700 MPa或更大、約1,500 MPa或更小、約1,200 MPa或更小、約1,000 MPa或更小或約800 MPa或更小。在另外實施例中,第一中心最大壓縮應力及/或第二中心最大壓縮應力可在自約100 MPa至約1,500 MPa、自約100 MPa至約1,200 MPa、自約300 MPa至約1,200 MPa、自約300 MPa至約1,000 MPa、自約500 MPa至約1,000 MPa、自約600 MPa至約1,000 MPa、自約600 MPa至約1,000 MPa、自約700 MPa至約1,000 MPa、自約700 MPa至約800 MPa之一範圍或其間之任一範圍或子範圍中。藉由提供在自約100 MPa至約1,500 MPa之一範圍中的第一中心最大壓縮應力及/或第二中心最大壓縮應力,可實現良好抗衝擊性及/或抗刺紮性。In some embodiments, the first central compressive stress region may include a first central maximum compressive stress. In some embodiments, the second central compressive stress region may include a second central maximum compressive stress. In further embodiments, the first central maximum compressive stress and/or the second central maximum compressive stress may be about 100 megapascals (MPa) or greater, about 300 MPa or greater, about 500 MPa or greater, about 600 MPa or greater MPa or more, about 700 MPa or more, about 1,500 MPa or less, about 1,200 MPa or less, about 1,000 MPa or less, or about 800 MPa or less. In further embodiments, the first central maximum compressive stress and/or the second central maximum compressive stress may range from about 100 MPa to about 1,500 MPa, from about 100 MPa to about 1,200 MPa, from about 300 MPa to about 1,200 MPa, from about 300 MPa to about 1,000 MPa, from about 500 MPa to about 1,000 MPa, from about 600 MPa to about 1,000 MPa, from about 600 MPa to about 1,000 MPa, from about 700 MPa to about 1,000 MPa, from about 700 MPa to In a range of about 800 MPa or any range or sub-range therebetween. Good impact resistance and/or puncture resistance can be achieved by providing a first central maximum compressive stress and/or a second central maximum compressive stress in one of from about 100 MPa to about 1,500 MPa.

在一些實施例中,中心部分281、481或881可包含與第一中心壓縮應力區域及第一中心層深度相關聯的一或多種鹼金屬離子之第一中心層深度。在一些實施例中,中心部分281、481或881可包含與第二中心壓縮應力區域及第二中心層深度相關聯的一或多種鹼金屬離子之第二中心層深度。在一些實施例中,一或多種鹼離子之第一中心層深度及/或一或多種鹼離子之第二中心層深度的一或多個鹼離子包含鉀。在一些實施例中,作為中心厚度227、427、827之一百分比的第一中心層深度及/或第二中心層深度可為約1%或更大、約5%或更大、約10%或更大、約40%或更小、約35%或更小、約30%或更小、約25%或更小或約20%或更小。在一些實施例中,作為中心厚度227、427或827之一百分比的第一中心層深度及/或第二中心層深度可在自約1%至約40%、自約1%至約35%、自約1%至約30%、自約1%至約25%、自約1%至約20%、自約5%至約30%、自約5%至約25%、自約5%至約20%、自約10%至約30%、自約10%至約25%、自約10%至約20%之一範圍或其間之任一範圍或子範圍中。在另外實施例中,作為中心厚度227、427或827之一百分比的一或多種鹼金屬離子之第一中心層深度及/或一或多種鹼金屬離子之第二中心層深度可為約10%或更小,例如,自約1%至約10%、自約1%至約8%、自約3%至約8%、自約5%至約8%,或其間之任一範圍或子範圍。在一些實施例中,一或多種鹼金屬離子之第一中心層深度及/或一或多種鹼金屬離子之第二中心層深度可為約1 μm或更大、約10 μm或更大、約30 μm或更大、約50 μm或更大、約200 μm或更小、約150 μm或更小、約100 μm或更小或約60 μm或更小。在一些實施例中,一或多種鹼金屬離子之第一中心層深度及/或一或多種鹼金屬離子之第二中心層深度可在自約1 µm至約200 µm、自約1 µm至約150 µm、自約10 µm至約150 µm、自約10 µm至約100 µm、自約30 µm至約100 µm、自約30 µm至約60 µm、自約50 µm至約60 µm之一範圍或其間之任一範圍或子範圍中。In some embodiments, the central portion 281, 481 or 881 may comprise a first central layer depth of one or more alkali metal ions associated with the first central compressive stress region and the first central layer depth. In some embodiments, the central portion 281, 481, or 881 may include a second central layer depth of one or more alkali metal ions associated with the second central compressive stress region and the second central layer depth. In some embodiments, the one or more alkali ions of the first central layer depth of the one or more alkali ions and/or the second central layer depth of the one or more alkali ions comprise potassium. In some embodiments, the first center layer depth and/or the second center layer depth as a percentage of the center thickness 227, 427, 827 may be about 1% or more, about 5% or more, about 10% or greater, about 40% or less, about 35% or less, about 30% or less, about 25% or less, or about 20% or less. In some embodiments, the first center layer depth and/or the second center layer depth as a percentage of the center thickness 227, 427, or 827 may be from about 1% to about 40%, from about 1% to about 35% , from about 1% to about 30%, from about 1% to about 25%, from about 1% to about 20%, from about 5% to about 30%, from about 5% to about 25%, from about 5% to about 20%, from about 10% to about 30%, from about 10% to about 25%, from about 10% to about 20%, or any range or sub-range therebetween. In further embodiments, the first center layer depth of the one or more alkali metal ions and/or the second center layer depth of the one or more alkali metal ions as a percentage of the center thickness 227, 427 or 827 may be about 10% or less, for example, from about 1% to about 10%, from about 1% to about 8%, from about 3% to about 8%, from about 5% to about 8%, or any range or sub- scope. In some embodiments, the first central layer depth of the one or more alkali metal ions and/or the second central layer depth of the one or more alkali metal ions may be about 1 μm or more, about 10 μm or more, about 30 μm or more, about 50 μm or more, about 200 μm or less, about 150 μm or less, about 100 μm or less, or about 60 μm or less. In some embodiments, the first central layer depth of the one or more alkali metal ions and/or the second central layer depth of the one or more alkali metal ions may be from about 1 μm to about 200 μm, from about 1 μm to about A range of 150 µm, from about 10 µm to about 150 µm, from about 10 µm to about 100 µm, from about 30 µm to about 100 µm, from about 30 µm to about 60 µm, from about 50 µm to about 60 µm or any range or subrange therebetween.

在一些實施例中,第一壓縮深度及/或第三壓縮深度可大於第一中心壓縮深度。在一些實施例中,第二壓縮深度及/或第四壓縮深度可大於第二中心壓縮深度。在一些實施例中,第一層深度及/或第三層深度可大於第一中心層深度。在一些實施例中,第二層深度及/或第四層深度可大於第二中心層深度。In some embodiments, the first compression depth and/or the third compression depth may be greater than the first central compression depth. In some embodiments, the second compression depth and/or the fourth compression depth may be greater than the second central compression depth. In some embodiments, the first layer depth and/or the third layer depth may be greater than the first center layer depth. In some embodiments, the second layer depth and/or the fourth layer depth may be greater than the second center layer depth.

在一些實施例中,中心部分281、481或881可包含一中心拉伸應力區域。在一些實施例中,中心拉伸應力區域可定位於第一中心壓縮應力區域與第二中心壓縮應力區域之間。在一些實施例中,中心拉伸應力區域可包含一中心最大拉伸應力。在另外實施例中,中心最大拉伸應力可為約125 MPa或更大、約150 MPa或更大、約200 MPa或更大、約375 MPa或更小、約300 MPa或更小或約250 MPa或更小。在另外實施例中,中心最大拉伸應力可在自約125 MPa至約375 MPa、自約125 MPa至約300 MPa、自約125 MPa至約250 MPa、自約150 MPa至約375 MPa、自約150 MPa至約300 MPa、自約150 MPa至約250 MPa、自約200 MPa至約375 MPa、自約200 MPa至約300 MPa、自約200 MPa至約250 MPa之一範圍或其間之任一範圍或子範圍中。提供在自約125 MPa至約375 MPa之一範圍中的中心最大拉伸應力可實現低最小彎曲半徑。In some embodiments, the central portion 281, 481 or 881 may comprise a central tensile stress region. In some embodiments, a central tensile stress region may be positioned between the first central compressive stress region and the second central compressive stress region. In some embodiments, the central tensile stress region may contain a central maximum tensile stress. In further embodiments, the central maximum tensile stress can be about 125 MPa or more, about 150 MPa or more, about 200 MPa or more, about 375 MPa or less, about 300 MPa or less, or about 250 MPa or more MPa or less. In further embodiments, the central maximum tensile stress may range from about 125 MPa to about 375 MPa, from about 125 MPa to about 300 MPa, from about 125 MPa to about 250 MPa, from about 150 MPa to about 375 MPa, from A range from about 150 MPa to about 300 MPa, from about 150 MPa to about 250 MPa, from about 200 MPa to about 375 MPa, from about 200 MPa to about 300 MPa, from about 200 MPa to about 250 MPa, or any one therebetween in a range or sub-range. Providing a central maximum tensile stress in a range from about 125 MPa to about 375 MPa can achieve a low minimum bend radius.

在一些實施例中,第一最大拉伸應力可實質上等於第二最大拉伸應力。在一些實施例中,第一最大拉伸應力及第二最大拉伸應力可小於中心最大拉伸應力。在中心部分中提供小於中心最大拉伸應力之一第一最大拉伸應力及一第二最大拉伸應力可實現低能量破裂,同時實現低最小彎曲半徑。在一些實施例中,中心最大拉伸應力與第一最大拉伸應力及/或第二最大拉伸應力之間的絕對差可為約0 MPa或更大、約1 MPa或更大、約5 MPa或更大、約50 MPa或更小、約20 MPa或更小、約10 MPa或更小或約8 MPa或更小。在一些實施例中,中心最大拉伸應力與第一最大拉伸應力及/或第二最大拉伸應力之間的絕對差可在自約0 MPa至約50 MPa、自約1 MPa至約50 MPa、自約1 MPa至約20 MPa、自約5 MPa至約20 MPa、自約5 MPa至約10 MPa、自約5 MPa至約8 MPa之一範圍或其間之任一範圍或子範圍中。In some embodiments, the first maximum tensile stress may be substantially equal to the second maximum tensile stress. In some embodiments, the first maximum tensile stress and the second maximum tensile stress may be less than the central maximum tensile stress. Providing a first maximum tensile stress and a second maximum tensile stress in the central portion that is less than the central maximum tensile stress enables low energy rupture while achieving a low minimum bend radius. In some embodiments, the absolute difference between the central maximum tensile stress and the first maximum tensile stress and/or the second maximum tensile stress may be about 0 MPa or more, about 1 MPa or more, about 5 MPa or more, about 50 MPa or less, about 20 MPa or less, about 10 MPa or less, or about 8 MPa or less. In some embodiments, the absolute difference between the central maximum tensile stress and the first maximum tensile stress and/or the second maximum tensile stress may be from about 0 MPa to about 50 MPa, from about 1 MPa to about 50 MPa, from about 1 MPa to about 20 MPa, from about 5 MPa to about 20 MPa, from about 5 MPa to about 10 MPa, from about 5 MPa to about 8 MPa, or in any range or sub-range therebetween .

在一些實施例中,第一壓縮深度可實質上等於第一中心壓縮深度。在更另外實施例中,第三壓縮深度可實質上等於第一中心壓縮深度。在一些實施例中,第二壓縮深度可實質上等於第二中心壓縮深度。在另外實施例中,第四壓縮深度可實質上等於第二中心壓縮深度。如上所論述,中心厚度可小於基板厚度(例如,在自約0.5%至約13%之一範圍中),此可使中心最大中心張力大於第一最大中心張力及第二最大中心張力,即使第一部分、第二部分及中心部分之壓縮深度可實質上相同。In some embodiments, the first compression depth may be substantially equal to the first central compression depth. In still further embodiments, the third compression depth may be substantially equal to the first central compression depth. In some embodiments, the second compression depth may be substantially equal to the second central compression depth. In further embodiments, the fourth compression depth may be substantially equal to the second central compression depth. As discussed above, the center thickness can be less than the substrate thickness (eg, in a range from about 0.5% to about 13%), which can make the center maximum center tension greater than the first and second maximum center tensions, even if the first The compression depths of one portion, the second portion and the central portion may be substantially the same.

在一些實施例中,第一過渡部分(例如,第一過渡部分853)及/或第二過渡部分可包含一過渡拉伸應力區域。該過渡拉伸應力區域可包含一過渡最大拉伸應力。在另外實施例中,過渡最大拉伸應力可為約125 MPa或更大、約150 MPa或更大、約200 MPa或更大、約500 MPa或更大、約375 MPa或更小、約300 MPa或更小或約250 MPa或更小。在另外實施例中,過渡最大拉伸應力可在自約125 MPa至約500 MPa、自約125 MPa至約375 MPa、自約125 MPa至約300 MPa、自約125 MPa至約250 MPa、自約150 MPa至約375 MPa、自約150 MPa至約300 MPa、自約150 MPa至約250 MPa、自約200 MPa至約375 MPa、自約200 MPa至約300 MPa、自約200 MPa至約250 MPa之一範圍或其間之任一範圍或子範圍中。在另外實施例中,過渡最大拉伸應力可大於中心最大拉伸應力。在另外實施例中,過渡最大拉伸應力可大於第一最大拉伸應力及/或第二最大拉伸應力。提供大於中心最大拉伸應力之過渡最大拉伸應力可抵消在折疊期間在第一部分或第二部分與第一過渡部分及/或第二過渡部分之間的應變。提供大於第一最大拉伸應力及/或第二最大拉伸應力之過渡最大拉伸應力可抵消在折疊期間在中心部分與第一過渡部分及/或第二過渡部分之間的應變。In some embodiments, the first transition portion (eg, first transition portion 853 ) and/or the second transition portion may include a region of transitional tensile stress. The transitional tensile stress region may contain a transitional maximum tensile stress. In further embodiments, the transitional maximum tensile stress may be about 125 MPa or more, about 150 MPa or more, about 200 MPa or more, about 500 MPa or more, about 375 MPa or less, about 300 MPa or more MPa or less or about 250 MPa or less. In further embodiments, the transitional maximum tensile stress may range from about 125 MPa to about 500 MPa, from about 125 MPa to about 375 MPa, from about 125 MPa to about 300 MPa, from about 125 MPa to about 250 MPa, from about 150 MPa to about 375 MPa, from about 150 MPa to about 300 MPa, from about 150 MPa to about 250 MPa, from about 200 MPa to about 375 MPa, from about 200 MPa to about 300 MPa, from about 200 MPa to about 250 MPa in one range or any range or sub-range therebetween. In further embodiments, the transition maximum tensile stress may be greater than the central maximum tensile stress. In further embodiments, the transition maximum tensile stress may be greater than the first maximum tensile stress and/or the second maximum tensile stress. Providing a transition maximum tensile stress greater than the central maximum tensile stress may counteract the strain between the first or second portion and the first and/or second transition portion during folding. Providing a transition maximum tensile stress greater than the first maximum tensile stress and/or the second maximum tensile stress may counteract the strain between the central portion and the first transition portion and/or the second transition portion during folding.

在一些實施例中,中心部分281、481或881可包含以氧化物為基礎的中心平均鉀濃度。在一些實施例中,以氧化物為基礎的中心平均鉀濃度可為約百萬分之10(ppm)或更大、約50 ppm或更大、約200 ppm或更大、約500 ppm或更大、約1,000 ppm或更大、約2,000 ppm或更大、約300,000或更小、約100,000 ppm或更小、約50,000 ppm或更小、約20,000 ppm或更小、約10,000 ppm或更小或約5,000 ppm或更小。在一些實施例中,以氧化物為基礎的中心平均鉀濃度可在自約10 ppm至約300,000 ppm、自約50 ppm至約300,000 ppm、自約50 ppm至約100,000 ppm、自約200 ppm至約100,000 ppm、自約200 ppm至約50,000 ppm、自約500 ppm至約50,000 ppm、自約500 ppm至約20,000 ppm、自約1,000 ppm至約20,000 ppm、自約2,000 ppm至約10,000 ppm、自約2,000 ppm至約5,000 ppm之一範圍或其間之任一範圍或子範圍中。In some embodiments, the central portion 281, 481, or 881 may comprise an oxide-based central average potassium concentration. In some embodiments, the central average potassium concentration on an oxide basis may be about 10 parts per million (ppm) or greater, about 50 ppm or greater, about 200 ppm or greater, about 500 ppm or greater Greater, about 1,000 ppm or more, about 2,000 ppm or more, about 300,000 ppm or less, about 100,000 ppm or less, about 50,000 ppm or less, about 20,000 ppm or less, about 10,000 ppm or less, or About 5,000 ppm or less. In some embodiments, the central average potassium concentration on an oxide basis can range from about 10 ppm to about 300,000 ppm, from about 50 ppm to about 300,000 ppm, from about 50 ppm to about 100,000 ppm, from about 200 ppm to about 200 ppm to about 100,000 ppm, from about 200 ppm to about 50,000 ppm, from about 500 ppm to about 50,000 ppm, from about 500 ppm to about 20,000 ppm, from about 1,000 ppm to about 20,000 ppm, from about 2,000 ppm to about 10,000 ppm, from In a range of about 2,000 ppm to about 5,000 ppm or any range or sub-range therebetween.

可折疊基板(例如,可折疊基板206、407或807)可經受多種類型之機械不穩定性。貫穿本揭露內容,機械不穩定性包括局部化之機械不穩定性,以及系統性機械不穩定性。如本文中使用,局部化之機械不穩定性彰顯為自一表面(例如,第一中心表面區)之一平面的偏離(例如,複數個偏離),而不使表面總體失真,例如,挫曲及/或起皺。如本文中使用,系統性機械不穩定性彰顯為全部表面自一平面之失真,例如,翹曲。如在第54圖中展示,水平軸5401(例如,x軸)包含中心厚度(例如,中心厚度227、427或827),且垂直軸5403(例如,y軸)包含基板厚度211、411或811。在第54圖中以曲線表示之形狀對應於針對在彼位置處之中心厚度與基板厚度之組合觀測到的機械不穩定性之類型(或多個類型)。菱形5409對應於挫曲。圓圈5407對應於挫曲及起皺。三角形5413對應於翹曲及起皺。正方形5411對應於翹曲。曲線5404及5405分開中心厚度與基板厚度之組合,其中與局部化之不穩定性發生之情況下的組合相反,僅發生寬泛的不穩定性(例如,翹曲)。曲線5405為指示當基板厚度大於約4倍之中心厚度減71微米時觀測局部化之不穩定性的線。更具體言之,曲線5405為指示當基板厚度大於約4.1倍之中心厚度減71.37微米時觀測局部化之不穩定性的線。曲線5404及5405指示對於較薄可折疊基板遇到之一些不穩定性(例如,局部化之機械不穩定性)(例如,在曲線5404及/或5405上方)可與對於較厚可折疊基板遇到之不穩定性(例如,在曲線2804及/或2805下方)不同。Foldable substrates (eg, foldable substrates 206, 407, or 807) can experience various types of mechanical instabilities. Throughout this disclosure, mechanical instability includes localized mechanical instability, as well as systemic mechanical instability. As used herein, localized mechanical instability manifests as a deviation (eg, a plurality of deviations) from a plane of a surface (eg, a first central surface region) without generally distorting the surface, eg, buckling and/or wrinkling. As used herein, systemic mechanical instability manifests as the distortion of all surfaces from a plane, eg, warping. As shown in Figure 54, the horizontal axis 5401 (eg, the x-axis) includes the center thickness (eg, the center thickness 227, 427, or 827), and the vertical axis 5403 (eg, the y-axis) includes the substrate thickness 211, 411, or 811 . The shape represented by the curve in Figure 54 corresponds to the type (or types) of mechanical instability observed for the combination of center thickness and substrate thickness at that location. Diamond 5409 corresponds to buckling. Circles 5407 correspond to buckling and wrinkling. Triangles 5413 correspond to warping and wrinkling. Square 5411 corresponds to warping. Curves 5404 and 5405 separate the combination of center thickness and substrate thickness, where only broad instability (eg, warpage) occurs, as opposed to the combination where localized instability occurs. Curve 5405 is a line indicating the observed localized instability when the substrate thickness is greater than about 4 times the center thickness minus 71 microns. More specifically, curve 5405 is a line indicating that localized instabilities are observed when the substrate thickness is greater than about 4.1 times the center thickness minus 71.37 microns. Curves 5404 and 5405 indicate that some instabilities (eg, localized mechanical instability) encountered with thinner foldable substrates (eg, above curves 5404 and/or 5405 ) may be encountered with thicker foldable substrates. The resulting instability (eg, below curves 2804 and/or 2805) is different.

當超過可折疊基板之一部分(例如,中心部分)之臨界應變(例如,臨界挫曲應變)時,可發生機械不穩定性(例如,局部化之機械不穩定性)之開始。舉例而言,類似於第8圖之可折疊基板807(包含20 mm的中心部分881之寬度)的中心部分之臨界挫曲應變可藉由106 乘以中心厚度之平方減23乘以中心厚度加0.0006之和來估算。舉例而言,並不希望受到理論約束,類似於第8圖之可折疊基板807(包含30 µm之中心厚度827)的中心部分之臨界挫曲應變可藉由3 × 10-7 除以中心部分281之寬度之平方來估算。The onset of mechanical instability (eg, localized mechanical instability) can occur when the critical strain (eg, critical buckling strain) of a portion (eg, the central portion) of the foldable substrate is exceeded. For example, the critical buckling strain for a center portion of a foldable substrate 807 similar to that of Figure 8 (including a width of a center portion 881 of 20 mm) can be calculated by multiplying 10 times the square of the center thickness minus 23 times the center thickness Add the sum of 0.0006 to estimate. For example, without wishing to be bound by theory, the critical buckling strain of a central portion of a foldable substrate 807 similar to Figure 8 (including a central thickness 827 of 30 µm) can be divided by 3 x 10-7 by the central portion The square of the width of 281 is estimated.

自化學強化可折疊基板產生的可折疊基板之中心部分之化學強化誘發壓縮應變可與以下各者之乘積成比例:網路擴張係數(B)、濃度差(C)及在中心部分之層深度除以中心厚度與第一部分(或第二部分)之層深度除以基板厚度之間的差。在一些實施例中,可藉由將濃度差最小化及/或將中心部分之層深度除以中心厚度與第一部分(或第二部分)之層深度除以基板厚度之間的差最小化來減小中心部分之化學強化誘發壓縮應變之壓縮應變(例如,至低於臨界挫曲應變之等級)。如本文中使用,網路擴張係數指作為交換至基板內的一或多種鹼離子之濃度之增大(例如,作為化學強化之結果)之結果,可折疊基板(例如,第一部分、第二部分、中心部分)之體積膨脹之量。在一些實施例中,第一部分之網路擴張常數及/或第二部分之網路擴張常數可實質上等於中心部分之網路擴張常數,例如,若在化學強化前,第一部分及/或第二部分及中心部分皆包含相同材料。The chemical strengthening induced compressive strain in the central portion of the foldable substrate produced from the chemically strengthened foldable substrate can be proportional to the product of: the network expansion coefficient (B), the concentration difference (C), and the layer depth at the central portion Divide by the difference between the center thickness and the layer depth of the first portion (or second portion) divided by the substrate thickness. In some embodiments, the concentration difference can be minimized by minimizing the difference in concentration and/or by minimizing the difference between the layer depth of the central portion divided by the central thickness and the layer depth of the first portion (or second portion) divided by the substrate thickness Reduce the compressive strain (eg, to a level below the critical buckling strain) of the chemical strengthening induced compressive strain in the central portion. As used herein, network expansion coefficient refers to a foldable substrate (eg, first portion, second portion, as a result of an increase in the concentration of one or more alkali ions exchanged into the substrate (eg, as a result of chemical strengthening) , the central part) of the volume expansion. In some embodiments, the network expansion constant of the first portion and/or the network expansion constant of the second portion may be substantially equal to the network expansion constant of the central portion, eg, if prior to chemical strengthening, the network expansion constant of the first portion and/or the second portion Both parts and the central part consist of the same material.

如本文中使用,一部分之濃度差指在該部分之表面處之濃度與在該部分之塊體中之濃度之間的差。除非另有指示,否則濃度及濃度差指與化學強化及/或壓縮應力區域相關聯的一或多種鹼金屬離子之濃度。在一些實施例中,濃度及/或濃度差可指以氧化物為基礎的鉀之濃度。在一些實施例中,在第一部分之塊體中之濃度及/或在第二部分之塊體中之濃度可實質上等於在中心部分之塊體中之濃度,例如,若第一部分及/或第二部分及中心部分在化學強化前包含相同材料,及/或若一部分之層深度小於對應部分之厚度之約45%。在一些實施例中,第一部分的以氧化物為基礎之第一平均鉀濃度可大於第一部分之塊體中的以氧化物為基礎之鉀濃度。在一些實施例中,第二部分的以氧化物為基礎之第二平均鉀濃度可大於第二部分之塊體中的以氧化物為基礎之鉀濃度。在一些實施例中,中心部分的以氧化物為基礎之中心平均鉀濃度可大於中心部分之塊體中的以氧化物為基礎之鉀濃度。As used herein, the concentration difference of a portion refers to the difference between the concentration at the surface of the portion and the concentration in the bulk of the portion. Unless otherwise indicated, concentrations and concentration differences refer to the concentration of one or more alkali metal ions associated with chemical strengthening and/or compressive stress regions. In some embodiments, the concentration and/or concentration difference may refer to the concentration of the oxide-based potassium. In some embodiments, the concentration in the bulk of the first portion and/or the concentration in the bulk of the second portion may be substantially equal to the concentration in the bulk of the central portion, eg, if the first portion and/or The second portion and the central portion comprise the same material prior to chemical strengthening, and/or if the layer depth of one portion is less than about 45% of the thickness of the corresponding portion. In some embodiments, the first oxide-based average potassium concentration of the first portion may be greater than the oxide-based potassium concentration in the bulk of the first portion. In some embodiments, the second average oxide-based potassium concentration of the second portion may be greater than the oxide-based potassium concentration in the bulk of the second portion. In some embodiments, the oxide-based central average potassium concentration of the central portion may be greater than the oxide-based potassium concentration in the bulk of the central portion.

如本文中使用,多個部分之間的濃度差意謂一個平均濃度與另一平均濃度之間的差。除非另有指示,否則濃度及濃度差指與化學強化及/或壓縮應力區域相關聯的一或多種鹼金屬離子之濃度。在一些實施例中,濃度及/或濃度差可指以氧化物為基礎的鉀之濃度。在一些實施例中,以氧化物為基礎的第一平均鉀濃度與以氧化物為基礎的中心平均鉀濃度之間的絕對差可為約1 ppm或更大、約10 ppm或更大、約20 ppm或更大、約50 ppm或更大、約70 ppm、約500 ppm或更小、約200 ppm或更小、約100 ppm或更小或約85 ppm或更小。在一些實施例中,以氧化物為基礎的第一平均鉀濃度與以氧化物為基礎的中心平均鉀濃度之間的絕對差可在自約1 ppm至約500 ppm、自約10 ppm至約500 ppm、自約10 ppm至約200 ppm、自約20 ppm至約200 ppm、自約20 ppm至約100 ppm、自約50 ppm至約100 ppm、自約70 ppm至約100 ppm、自約70 ppm至約85 ppm之一範圍或其間之任一範圍或子範圍中。在一些實施例中,以氧化物為基礎的第二平均鉀濃度與以氧化物為基礎的中心平均鉀濃度之間的絕對差可為約1 ppm或更大、約10 ppm或更大、約20 ppm或更大、約50 ppm或更大、約70 ppm、約500 ppm或更小、約200 ppm或更小、約100 ppm或更小或約85 ppm或更小。在一些實施例中,以氧化物為基礎的第二平均鉀濃度與以氧化物為基礎的中心平均鉀濃度之間的絕對差可在自約1 ppm至約500 ppm、自約10 ppm至約500 ppm、自約10 ppm至約200 ppm、自約20 ppm至約200 ppm、自約20 ppm至約100 ppm、自約50 ppm至約100 ppm、自約70 ppm至約100 ppm、自約70 ppm至約85 ppm之一範圍或其間之任一範圍或子範圍中。舉例而言,當平均濃度之間的絕對差為約75 ppm或更小時,對於包含30 µm之中心厚度及20 mm之中心寬度的可折疊基板,化學強化誘發應變可小於臨界挫曲應變。在一些實施例中,以氧化物為基礎的第一平均鉀濃度與以氧化物為基礎的中心平均鉀濃度之間的絕對差可小於70 ppm,例如,在自約0.1 ppm至約60 ppm、自約0.1 ppm至約50 ppm、自約0.1 ppm至約40 ppm、自約0.1 ppm至約30 ppm、自約0.1 ppm至約20 ppm、自約0.5 ppm至約20 ppm、自約0.5 ppm至約10 ppm、自約1 ppm至約10 ppm、自約5 ppm至約10 ppm之一範圍或其間之任一範圍或子範圍中。在一些實施例中,以氧化物為基礎的第二平均鉀濃度與以氧化物為基礎的中心平均鉀濃度之間的絕對差可小於70 ppm,例如,在自約0.1 ppm至約50 ppm、自約0.1 ppm至約20 ppm、自約0.5 ppm至約20 ppm、自約0.5 ppm至約10 ppm、自約1 ppm至約10 ppm、自約5 ppm至約10 ppm之一範圍或其間之任一範圍或子範圍中。提供以氧化物為基礎的鉀之第一平均濃度及/或第二平均濃度與中心平均濃度之間的絕對差可提供減小之化學強化誘發應變(例如,低於臨界挫曲應變)及/或減少在可折疊基板及/或可折疊設備中的機械不穩定性之發生。As used herein, the difference in concentration between parts means the difference between one average concentration and another average concentration. Unless otherwise indicated, concentrations and concentration differences refer to the concentration of one or more alkali metal ions associated with chemical strengthening and/or compressive stress regions. In some embodiments, the concentration and/or concentration difference may refer to the concentration of the oxide-based potassium. In some embodiments, the absolute difference between the oxide-based first average potassium concentration and the oxide-based central average potassium concentration may be about 1 ppm or greater, about 10 ppm or greater, about 20 ppm or more, about 50 ppm or more, about 70 ppm, about 500 ppm or less, about 200 ppm or less, about 100 ppm or less, or about 85 ppm or less. In some embodiments, the absolute difference between the oxide-based first average potassium concentration and the oxide-based central average potassium concentration may be from about 1 ppm to about 500 ppm, from about 10 ppm to about 500 ppm, from about 10 ppm to about 200 ppm, from about 20 ppm to about 200 ppm, from about 20 ppm to about 100 ppm, from about 50 ppm to about 100 ppm, from about 70 ppm to about 100 ppm, from about In a range of 70 ppm to about 85 ppm or any range or sub-range therebetween. In some embodiments, the absolute difference between the oxide-based second average potassium concentration and the oxide-based central average potassium concentration can be about 1 ppm or greater, about 10 ppm or greater, about 20 ppm or more, about 50 ppm or more, about 70 ppm, about 500 ppm or less, about 200 ppm or less, about 100 ppm or less, or about 85 ppm or less. In some embodiments, the absolute difference between the oxide-based second average potassium concentration and the oxide-based central average potassium concentration can be from about 1 ppm to about 500 ppm, from about 10 ppm to about 500 ppm, from about 10 ppm to about 200 ppm, from about 20 ppm to about 200 ppm, from about 20 ppm to about 100 ppm, from about 50 ppm to about 100 ppm, from about 70 ppm to about 100 ppm, from about In a range of 70 ppm to about 85 ppm or any range or sub-range therebetween. For example, the chemical strengthening induced strain can be less than the critical buckling strain for a foldable substrate comprising a center thickness of 30 μm and a center width of 20 mm when the absolute difference between the mean concentrations is about 75 ppm or less. In some embodiments, the absolute difference between the oxide-based first average potassium concentration and the oxide-based central average potassium concentration may be less than 70 ppm, eg, at from about 0.1 ppm to about 60 ppm, from about 0.1 ppm to about 50 ppm, from about 0.1 ppm to about 40 ppm, from about 0.1 ppm to about 30 ppm, from about 0.1 ppm to about 20 ppm, from about 0.5 ppm to about 20 ppm, from about 0.5 ppm to about In a range of about 10 ppm, from about 1 ppm to about 10 ppm, from about 5 ppm to about 10 ppm, or any range or sub-range therebetween. In some embodiments, the absolute difference between the oxide-based second average potassium concentration and the oxide-based central average potassium concentration can be less than 70 ppm, for example, at from about 0.1 ppm to about 50 ppm, one of from about 0.1 ppm to about 20 ppm, from about 0.5 ppm to about 20 ppm, from about 0.5 ppm to about 10 ppm, from about 1 ppm to about 10 ppm, from about 5 ppm to about 10 ppm, or therebetween in any range or subrange. Providing the absolute difference between the first average concentration and/or the second average concentration of oxide-based potassium and the central average concentration can provide reduced chemical strengthening induced strain (eg, below a critical buckling strain) and/or Or reduce the occurrence of mechanical instability in foldable substrates and/or foldable devices.

在一些實施例中,在第一層深度除以基板厚度與第一中心層深度除以中心厚度之間的絕對差可為約0.001%或更大、約0.002%或更大、約0.005%或更大、約1%或更小、約0.2%或更小、約0.1%或更小、約0.05%或更小、約0.01%或更小或約0.008%或更小。在一些實施例中,在第一層深度除以基板厚度與第一中心層深度除以中心厚度之間的絕對差可在自約0.001%至約1%、自約0.002%至約1%、自約0.002%至約0.2%、自約0.005%至約0.2%、自約0.005%至約0.1%、自約0.005%至約0.1%、自約0.005%至約0.05%、自約0.005%至約0.01%、自約0.005%至約0.008%之一範圍或其間之任一範圍或子範圍中。在一些實施例中,在第三層深度除以基板厚度與第一中心層深度除以中心厚度之間的絕對差可為約0.001%或更大、約0.002%或更大、約0.005%或更大、約1%或更小、約0.2%或更小、約0.1%或更小、約0.05%或更小、約0.01%或更小或約0.008%或更小。在一些實施例中,在第三層深度除以基板厚度與第一中心層深度除以中心厚度之間的絕對差可在自約0.001%至約1%、自約0.002%至約1%、自約0.002%至約0.2%、自約0.005%至約0.2%、自約0.005%至約0.1%、自約0.005%至約0.1%、自約0.005%至約0.05%、自約0.005%至約0.01%、自約0.005%至約0.008%之一範圍或其間之任一範圍或子範圍中。In some embodiments, the absolute difference between the depth of the first layer divided by the thickness of the substrate and the depth of the first center layer divided by the thickness of the center may be about 0.001% or more, about 0.002% or more, about 0.005%, or greater, about 1% or less, about 0.2% or less, about 0.1% or less, about 0.05% or less, about 0.01% or less, or about 0.008% or less. In some embodiments, the absolute difference between the depth of the first layer divided by the thickness of the substrate and the depth of the first center layer divided by the thickness of the center may be from about 0.001% to about 1%, from about 0.002% to about 1%, from about 0.002% to about 0.2%, from about 0.005% to about 0.2%, from about 0.005% to about 0.1%, from about 0.005% to about 0.1%, from about 0.005% to about 0.05%, from about 0.005% to In a range of about 0.01%, from about 0.005% to about 0.008%, or any range or subrange therebetween. In some embodiments, the absolute difference between the depth of the third layer divided by the thickness of the substrate and the depth of the first center layer divided by the thickness of the center may be about 0.001% or more, about 0.002% or more, about 0.005%, or greater, about 1% or less, about 0.2% or less, about 0.1% or less, about 0.05% or less, about 0.01% or less, or about 0.008% or less. In some embodiments, the absolute difference between the depth of the third layer divided by the thickness of the substrate and the depth of the first center layer divided by the thickness of the center may be from about 0.001% to about 1%, from about 0.002% to about 1%, from about 0.002% to about 0.2%, from about 0.005% to about 0.2%, from about 0.005% to about 0.1%, from about 0.005% to about 0.1%, from about 0.005% to about 0.05%, from about 0.005% to In a range of about 0.01%, from about 0.005% to about 0.008%, or any range or subrange therebetween.

在一些實施例中,在第二層深度除以基板厚度與第二中心層深度除以中心厚度之間的絕對差可為約0.001%或更大、約0.002%或更大、約0.005%或更大、約1%或更小、約0.2%或更小、約0.1%或更小或約0.05%或更小、約0.01%或更小或約0.008%或更小。在一些實施例中,在第二層深度除以基板厚度與第二中心層深度除以中心厚度之間的絕對差可在自約0.001%至約1%、自約0.002%至約1%、自約0.002%至約0.2%、自約0.005%至約0.2%、自約0.005%至約0.1%、自約0.005%至約0.1%、自約0.005%至約0.05%、自約0.005%至約0.01%、自約0.005%至約0.008%之一範圍或其間之任一範圍或子範圍中。在一些實施例中,在第四層深度除以基板厚度與第二中心層深度除以中心厚度之間的絕對差可為約0.001%或更大、約0.002%或更大、約0.005%或更大、約1%或更小、約0.2%或更小、約0.1%或更小或約0.05%或更小、約0.01%或更小或約0.008%或更小。在一些實施例中,在第四層深度除以基板厚度與第二中心層深度除以中心厚度之間的絕對差可在自約0.001%至約1%、自約0.002%至約1%、自約0.002%至約0.2%、自約0.005%至約0.2%、自約0.005%至約0.1%、自約0.005%至約0.1%、自約0.005%至約0.05%、自約0.005%至約0.01%、自約0.005%至約0.008%之一範圍或其間之任一範圍或子範圍中。舉例而言,當在與第一部分或第二部分相關聯之層深度除以基板厚度與與中心部分相關聯之層深度除以中心厚度之間的絕對值為約0.075%或更小時,對於包含30 µm之中心厚度及20 mm之中心寬度的可折疊基板,化學強化誘發應變可小於臨界挫曲應變。在一些實施例中,第一層深度、第二層深度、第三層深度或第四層深度中之一者除以基板厚度與第一中心層深度或第二中心層深度除以中心厚度之間的絕對差可小於0.07%,例如,在自約0.001%至約0.07%、自約0.01%至約0.07%、自約0.01%至約0.05%、自約0.01%至約0.02%之一範圍或其間之任一範圍或子範圍中。提供第一層深度、第二層深度、第三層深度及/或第四層深度除以基板厚度與第一中心層深度及/或第二中心層深度除以中心厚度(例如,鉀之層深度)之間的絕對差可提供減小之化學強化誘發應變(例如,低於臨界挫曲應變)及/或減少在可折疊基板及/或可折疊設備中的機械不穩定性之發生。In some embodiments, the absolute difference between the depth of the second layer divided by the thickness of the substrate and the depth of the second center layer divided by the thickness of the center may be about 0.001% or more, about 0.002% or more, about 0.005%, or greater, about 1% or less, about 0.2% or less, about 0.1% or less, or about 0.05% or less, about 0.01% or less, or about 0.008% or less. In some embodiments, the absolute difference between the depth of the second layer divided by the thickness of the substrate and the depth of the second center layer divided by the thickness of the center may be from about 0.001% to about 1%, from about 0.002% to about 1%, from about 0.002% to about 0.2%, from about 0.005% to about 0.2%, from about 0.005% to about 0.1%, from about 0.005% to about 0.1%, from about 0.005% to about 0.05%, from about 0.005% to In a range of about 0.01%, from about 0.005% to about 0.008%, or any range or subrange therebetween. In some embodiments, the absolute difference between the depth of the fourth layer divided by the thickness of the substrate and the depth of the second center layer divided by the thickness of the center may be about 0.001% or more, about 0.002% or more, about 0.005%, or greater, about 1% or less, about 0.2% or less, about 0.1% or less, or about 0.05% or less, about 0.01% or less, or about 0.008% or less. In some embodiments, the absolute difference between the depth of the fourth layer divided by the thickness of the substrate and the depth of the second center layer divided by the thickness of the center may be from about 0.001% to about 1%, from about 0.002% to about 1%, from about 0.002% to about 0.2%, from about 0.005% to about 0.2%, from about 0.005% to about 0.1%, from about 0.005% to about 0.1%, from about 0.005% to about 0.05%, from about 0.005% to In a range of about 0.01%, from about 0.005% to about 0.008%, or any range or subrange therebetween. For example, when the absolute value between the depth of the layer associated with the first portion or the second portion divided by the thickness of the substrate and the depth of the layer associated with the central portion divided by the central thickness is about 0.075% or less, for a For a foldable substrate with a center thickness of 30 µm and a center width of 20 mm, the chemical strengthening induced strain can be less than the critical buckling strain. In some embodiments, one of the first layer depth, the second layer depth, the third layer depth, or the fourth layer depth is divided by the substrate thickness and the first center layer depth or the second center layer depth divided by the center thickness The absolute difference between can be less than 0.07%, for example, in a range from about 0.001% to about 0.07%, from about 0.01% to about 0.07%, from about 0.01% to about 0.05%, from about 0.01% to about 0.02% or any range or subrange therebetween. Provide the first layer depth, second layer depth, third layer depth, and/or fourth layer depth divided by substrate thickness and first center layer depth and/or second center layer depth divided by center thickness (e.g., a layer of potassium The absolute difference between depths) may provide reduced chemical strengthening induced strain (eg, below a critical buckling strain) and/or reduce the occurrence of mechanical instability in foldable substrates and/or foldable devices.

壓縮深度可與對應的層深度成比例。在一些實施例中,在第一壓縮深度除以基板厚度與第一中心壓縮深度除以中心厚度之間的絕對差可為約0.001%或更大、約0.002%或更大、約0.005%或更大、約1%或更小、約0.2%或更小、約0.1%或更小、約0.05%或更小、約0.01%或更小或約0.008%或更小。在一些實施例中,在第一壓縮深度除以基板厚度與第一中心壓縮深度除以中心厚度之間的絕對差可在自約0.001%至約1%、自約0.002%至約1%、自約0.002%至約0.2%、自約0.005%至約0.2%、自約0.005%至約0.1%、自約0.005%至約0.1%、自約0.005%至約0.05%、自約0.005%至約0.01%、自約0.005%至約0.008%之一範圍或其間之任一範圍或子範圍中。在一些實施例中,在第三壓縮深度除以基板厚度與第一中心壓縮深度除以中心厚度之間的絕對差可為約0.001%或更大、約0.002%或更大、約0.005%或更大、約1%或更小、約0.2%或更小、約0.1%或更小、約0.05%或更小、約0.01%或更小或約0.008%或更小。在一些實施例中,在第三壓縮深度除以基板厚度與第一中心壓縮深度除以中心厚度之間的絕對差可在自約0.001%至約1%、自約0.002%至約1%、自約0.002%至約0.2%、自約0.005%至約0.2%、自約0.005%至約0.1%、自約0.005%至約0.1%、自約0.005%至約0.05%、自約0.005%至約0.01%、自約0.005%至約0.008%之一範圍或其間之任一範圍或子範圍中。The compression depth may be proportional to the corresponding layer depth. In some embodiments, the absolute difference between the first depth of compression divided by the thickness of the substrate and the first depth of compression divided by the center thickness may be about 0.001% or more, about 0.002% or more, about 0.005%, or greater, about 1% or less, about 0.2% or less, about 0.1% or less, about 0.05% or less, about 0.01% or less, or about 0.008% or less. In some embodiments, the absolute difference between the first compression depth divided by the substrate thickness and the first center compression depth divided by the center thickness may be from about 0.001% to about 1%, from about 0.002% to about 1%, from about 0.002% to about 0.2%, from about 0.005% to about 0.2%, from about 0.005% to about 0.1%, from about 0.005% to about 0.1%, from about 0.005% to about 0.05%, from about 0.005% to In a range of about 0.01%, from about 0.005% to about 0.008%, or any range or subrange therebetween. In some embodiments, the absolute difference between the third depth of compression divided by the thickness of the substrate and the first depth of compression divided by the thickness of the center may be about 0.001% or more, about 0.002% or more, about 0.005%, or greater, about 1% or less, about 0.2% or less, about 0.1% or less, about 0.05% or less, about 0.01% or less, or about 0.008% or less. In some embodiments, the absolute difference between the third compression depth divided by the substrate thickness and the first center compression depth divided by the center thickness may be from about 0.001% to about 1%, from about 0.002% to about 1%, from about 0.002% to about 0.2%, from about 0.005% to about 0.2%, from about 0.005% to about 0.1%, from about 0.005% to about 0.1%, from about 0.005% to about 0.05%, from about 0.005% to In a range of about 0.01%, from about 0.005% to about 0.008%, or any range or subrange therebetween.

在一些實施例中,在第二壓縮深度除以基板厚度與第二中心壓縮深度除以中心厚度之間的絕對差可為約0.001%或更大、約0.002%或更大、約0.005%或更大、約1%或更小、約0.2%或更小、約0.1%或更小、約0.05%或更小、約0.01%或更小或約0.008%或更小。在一些實施例中,在第二壓縮深度除以基板厚度與第二中心壓縮深度除以中心厚度之間的絕對差可在自約0.001%至約1%、自約0.002%至約1%、自約0.002%至約0.2%、自約0.005%至約0.2%、自約0.005%至約0.1%、自約0.005%至約0.1%、自約0.005%至約0.05%、自約0.005%至約0.01%、自約0.005%至約0.008%之一範圍或其間之任一範圍或子範圍中。在一些實施例中,在第四壓縮深度除以基板厚度與第二中心壓縮深度除以中心厚度之間的絕對差可為約0.001%或更大、約0.002%或更大、約0.005%或更大、約1%或更小、約0.2%或更小、約0.1%或更小、約0.05%或更小、約0.01%或更小或約0.008%或更小。在一些實施例中,在第四壓縮深度除以基板厚度與第二中心壓縮深度除以中心厚度之間的絕對差可在自約0.001%至約1%、自約0.002%至約1%、自約0.002%至約0.2%、自約0.005%至約0.2%、自約0.005%至約0.1%、自約0.005%至約0.1%、自約0.005%至約0.05%、自約0.005%至約0.01%、自約0.005%至約0.008%之一範圍或其間之任一範圍或子範圍中。舉例而言,當在與第一部分或第二部分相關聯之壓縮深度除以基板厚度與與中心部分相關聯之壓縮深度除以中心厚度之間的絕對值為約0.075%或更小時,對於包含30 µm之中心厚度及20 mm之中心寬度的可折疊基板,化學強化誘發應變可小於臨界挫曲應變。在一些實施例中,第一壓縮深度、第二壓縮深度、第三壓縮深度或第四壓縮深度中之一者除以基板厚度與第一中心壓縮深度或第二中心壓縮深度除以中心厚度之間的絕對差可小於0.07%,例如,在自約0.001%至約0.07%、自約0.01%至約0.07%、自約0.01%至約0.05%、自約0.01%至約0.02%之一範圍或其間之任一範圍或子範圍中。提供第一壓縮深度、第二壓縮深度、第三壓縮深度及/或第四壓縮深度除以基板厚度與第一中心壓縮深度及/或第二中心壓縮深度除以中心厚度(例如,鉀之層深度)之間的絕對差可提供減小之化學強化誘發應變(例如,低於臨界挫曲應變)及/或減少在可折疊基板及/或可折疊設備中的機械不穩定性之發生。In some embodiments, the absolute difference between the second depth of compression divided by the thickness of the substrate and the second depth of compression divided by the thickness of the center may be about 0.001% or more, about 0.002% or more, about 0.005%, or greater, about 1% or less, about 0.2% or less, about 0.1% or less, about 0.05% or less, about 0.01% or less, or about 0.008% or less. In some embodiments, the absolute difference between the second compression depth divided by the substrate thickness and the second central compression depth divided by the central thickness may be from about 0.001% to about 1%, from about 0.002% to about 1%, from about 0.002% to about 0.2%, from about 0.005% to about 0.2%, from about 0.005% to about 0.1%, from about 0.005% to about 0.1%, from about 0.005% to about 0.05%, from about 0.005% to In a range of about 0.01%, from about 0.005% to about 0.008%, or any range or subrange therebetween. In some embodiments, the absolute difference between the fourth depth of compression divided by the thickness of the substrate and the second depth of compression divided by the center thickness may be about 0.001% or more, about 0.002% or more, about 0.005%, or greater, about 1% or less, about 0.2% or less, about 0.1% or less, about 0.05% or less, about 0.01% or less, or about 0.008% or less. In some embodiments, the absolute difference between the fourth compression depth divided by the substrate thickness and the second center compression depth divided by the center thickness may be from about 0.001% to about 1%, from about 0.002% to about 1%, from about 0.002% to about 0.2%, from about 0.005% to about 0.2%, from about 0.005% to about 0.1%, from about 0.005% to about 0.1%, from about 0.005% to about 0.05%, from about 0.005% to In a range of about 0.01%, from about 0.005% to about 0.008%, or any range or subrange therebetween. For example, when the absolute value between the depth of compression associated with the first portion or the second portion divided by the thickness of the substrate and the depth of compression associated with the central portion divided by the central thickness is about 0.075% or less, for a composition comprising For a foldable substrate with a center thickness of 30 µm and a center width of 20 mm, the chemical strengthening induced strain can be less than the critical buckling strain. In some embodiments, one of the first compression depth, the second compression depth, the third compression depth, or the fourth compression depth is divided by the thickness of the substrate and the first central compression depth or the second central compression depth divided by the central thickness The absolute difference between can be less than 0.07%, for example, in a range from about 0.001% to about 0.07%, from about 0.01% to about 0.07%, from about 0.01% to about 0.05%, from about 0.01% to about 0.02% or any range or subrange therebetween. Provide the first compression depth, the second compression depth, the third compression depth, and/or the fourth compression depth divided by the substrate thickness and the first central compression depth and/or the second central compression depth divided by the central thickness (eg, a layer of potassium The absolute difference between depths) may provide reduced chemical strengthening induced strain (eg, below a critical buckling strain) and/or reduce the occurrence of mechanical instability in foldable substrates and/or foldable devices.

在一些實施例中,可在可折疊基板之光學阻滯分佈中觀測到化學強化誘發應變及/或應力。如本文中使用,使用灰度場偏光計來量測光學阻滯分佈,該灰度場偏光計偵測自包含約553 nm之光學波長的綠LED發射、穿過可折疊基板之光。並不希望受到理論約束,光學阻滯之空間差可對應於可折疊基板中之應力(例如,平面中應變)之差,例如,作為應力誘發之雙折射。在一些實施例中,沿著在第一部分與第二部分之間的中途之中心線的中心部分之光學阻滯,沿著中心線的光學阻滯之最大值與沿著中心線的光學阻滯之最小值之間的絕對差可為約0.1 nm或更大、約0.5 nm或更大、約1 nm或更大、約3 nm或更小、約2奈米或更小或約1.5 nm或更小。在一些實施例中,沿著中心線的光學阻滯之最大值與沿著中心線的光學阻滯之最小值之間的絕對差可在自約0.1 nm至約3 nm、自約0.1 nm至約2 nm、自約0.5 nm至約2 nm、自約0.5 nm至約1.5 nm、自約1 nm至約1.5 nm之一範圍或其間之任一範圍或子範圍中。In some embodiments, chemical strengthening-induced strain and/or stress may be observed in the optical retardation profile of the foldable substrate. As used herein, the optical retardation distribution is measured using a grayscale field polarimeter that detects light emitted from a green LED comprising an optical wavelength of about 553 nm, passing through the foldable substrate. Without wishing to be bound by theory, the spatial difference in optical retardation may correspond to the difference in stress (eg, in-plane strain) in the foldable substrate, eg, as stress-induced birefringence. In some embodiments, the optical retardation along the center portion of the centerline halfway between the first portion and the second portion, the maximum value of the optical retardation along the centerline and the optical retardation along the centerline The absolute difference between the minimum values can be about 0.1 nm or more, about 0.5 nm or more, about 1 nm or more, about 3 nm or less, about 2 nm or less, or about 1.5 nm or smaller. In some embodiments, the absolute difference between the maximum value of the optical retardation along the centerline and the minimum value of the optical retardation along the centerline may be from about 0.1 nm to about 3 nm, from about 0.1 nm to In a range of about 2 nm, from about 0.5 nm to about 2 nm, from about 0.5 nm to about 1.5 nm, from about 1 nm to about 1.5 nm, or any range or sub-range therebetween.

在一些實施例中,中心部分281、481或881之光學阻滯與第一部分221、421或821及/或第二部分231、431或831之最小光學阻滯之間的最大差可為約0.1 nm或更大、約0.5 nm或更大、約1 nm或更大、約2 nm或更大、約3 nm或更大、約8 nm或更小、約6 nm或更小、約5 nm或更小或約4 nm或更小。在一些實施例中,中心部分281、481或881之光學阻滯與第一部分221、421或821及/或第二部分231、431或831之最小光學阻滯之間的最大差可在自約0.1 nm至約8 nm、自約0.1 nm至約6 nm、自約0.5 nm至約6 nm、自約0.5 nm至約5 nm、自約1 nm至約5 nm、自約2 nm至約5 nm、自約2 nm至約5 nm、自約2 nm至約4 nm之一範圍或其間之任一範圍或子範圍中。舉例而言,當中心部分281、481或881之光學阻滯與第一部分221、421或821及/或第二部分231、431或831之最小光學阻滯之間的最大差為約4.6 nm或更小時,包含約30 µm之中心厚度的一可折疊基板可避免機械不穩定性。舉例而言,當中心部分281、481或881之光學阻滯與第一部分221、421或821及/或第二部分231、431或831之最小光學阻滯之間的最大差為約5.9 nm或更小時,包含約40 µm之中心厚度的一可折疊基板可避免機械不穩定性。In some embodiments, the maximum difference between the optical retardation of the central portion 281 , 481 or 881 and the minimum optical retardation of the first portion 221 , 421 or 821 and/or the second portion 231 , 431 or 831 may be about 0.1 nm or more, about 0.5 nm or more, about 1 nm or more, about 2 nm or more, about 3 nm or more, about 8 nm or less, about 6 nm or less, about 5 nm or less or about 4 nm or less. In some embodiments, the maximum difference between the optical retardation of the central portion 281 , 481 or 881 and the minimum optical retardation of the first portion 221 , 421 or 821 and/or the second portion 231 , 431 or 831 may be determined at 0.1 nm to about 8 nm, from about 0.1 nm to about 6 nm, from about 0.5 nm to about 6 nm, from about 0.5 nm to about 5 nm, from about 1 nm to about 5 nm, from about 2 nm to about 5 nm nm, one range from about 2 nm to about 5 nm, from about 2 nm to about 4 nm, or any range or subrange therebetween. For example, when the maximum difference between the optical retardation of the central portion 281, 481 or 881 and the minimum optical retardation of the first portion 221, 421 or 821 and/or the second portion 231, 431 or 831 is about 4.6 nm or Even smaller, a foldable substrate comprising a central thickness of about 30 µm avoids mechanical instability. For example, when the maximum difference between the optical retardation of the central portion 281, 481 or 881 and the minimum optical retardation of the first portion 221, 421 or 821 and/or the second portion 231, 431 or 831 is about 5.9 nm or Even smaller, a foldable substrate comprising a central thickness of about 40 µm avoids mechanical instability.

在一些實施例中,基於聚合物之部分241可透光。基於聚合物之部分241可包含第一折射率。該第一折射率可為穿過透光黏著劑的光之波長之函數。對於第一波長之光,將材料之折射率定義為光在真空中之速度與光在對應材料中之速度之間的比率。並不希望受到理論約束,可使用第一角度之正弦與第二角度之正弦的比率判定透光黏著劑之折射率,其中第一波長之光在該透光黏著劑之一表面上按第一角度自空氣入射,且在該透光黏著劑之該表面處折射以按第二角度在透光黏著劑內傳播光。第一角度及第二角度皆係相對於透光黏著劑之表面之法線量測。如本文中使用,折射率係根據ASTM E1967-19量測,其中第一波長包含589 nm。在一些實施例中,基於聚合物之部分241之第一折射率可為約1或更大、約1.3或更大、約1.4或更大、約1.45或更大、約1.49或更大、約3或更小、約2或更小或約1.7或更小、約1.6或更小或約1.55或更小。在一些實施例中,基於聚合物之部分241之第一折射率可在自約1至約3、自約1至約2、自約1至約1.7、自約1.3至約1.7、自約1.4至約1.7、自約1.4至約1.6、自約1.45至約1.55、自約1.49至約1.55之一範圍或其間之任一範圍或子範圍中。In some embodiments, the polymer-based portion 241 is light transmissive. The polymer-based portion 241 may include a first index of refraction. The first index of refraction can be a function of the wavelength of light passing through the clear adhesive. For light of the first wavelength, the refractive index of a material is defined as the ratio between the speed of light in vacuum and the speed of light in the corresponding material. Without wishing to be bound by theory, the ratio of the sine of the first angle to the sine of the second angle can be used to determine the index of refraction of a light-transmitting adhesive, wherein light of a first wavelength presses the first wavelength on a surface of the light-transmitting adhesive. The angle is incident from air and is refracted at the surface of the clear adhesive to propagate light within the clear adhesive at a second angle. Both the first angle and the second angle are measured relative to the normal of the surface of the light-transmitting adhesive. As used herein, the refractive index is measured according to ASTM E1967-19, wherein the first wavelength comprises 589 nm. In some embodiments, the first refractive index of the polymer-based portion 241 can be about 1 or greater, about 1.3 or greater, about 1.4 or greater, about 1.45 or greater, about 1.49 or greater, about 3 or less, about 2 or less, or about 1.7 or less, about 1.6 or less, or about 1.55 or less. In some embodiments, the first index of refraction of the polymer-based portion 241 may range from about 1 to about 3, from about 1 to about 2, from about 1 to about 1.7, from about 1.3 to about 1.7, from about 1.4 In a range of to about 1.7, from about 1.4 to about 1.6, from about 1.45 to about 1.55, from about 1.49 to about 1.55, or any range or sub-range therebetween.

在一些實施例中,可折疊基板206、407或807可包含一第二折射率。在一些實施例中,可折疊基板206、407或807之第二折射率可為約1或更大、約1.3或更大、約1.4或更大、約1.45或更大、約1.49或更大、約3或更小、約2或更小或約1.7或更小、約1.6或更小或約1.55或更小。在一些實施例中,可折疊基板206、407或807之第二折射率可在自約1至約3、自約1至約2、自約1至約1.7、自約1.3至約1.7、自約1.4至約1.7、自約1.4至約1.6、自約1.45至約1.55、自約1.49至約1.55之一範圍或其間之任一範圍或子範圍中。在一些實施例中,等於可折疊基板206、407或807之第二折射率與基於聚合物之部分241之第一折射率之間的差之絕對值之微分可為約0.1或更小、約0.07或更小、約0.05或更小、約0.001或更大、約0.01或更大或約0.02或更大。在一些實施例中,該微分在自約0.001至約0.1、自約0.001至約0.07、自約0.001至約0.05、自約0.01至約0.1、自約0.01至約0.07、自約0.01至約0.05、自約0.02至約0.1、自約0.02至約0.07、自約0.02至約0.05之一範圍或其間之任一範圍或子範圍中。在一些實施例中,可折疊基板206、407或807之第二折射率可大於基於聚合物之部分241之第一折射率。在一些實施例中,可折疊基板206、407或807之第二折射率可小於基於聚合物之部分241之第一折射率。In some embodiments, the foldable substrate 206, 407 or 807 may include a second index of refraction. In some embodiments, the second index of refraction of the foldable substrate 206, 407 or 807 may be about 1 or greater, about 1.3 or greater, about 1.4 or greater, about 1.45 or greater, about 1.49 or greater , about 3 or less, about 2 or less, or about 1.7 or less, about 1.6 or less, or about 1.55 or less. In some embodiments, the second index of refraction of the foldable substrate 206, 407 or 807 may be from about 1 to about 3, from about 1 to about 2, from about 1 to about 1.7, from about 1.3 to about 1.7, from In a range of about 1.4 to about 1.7, from about 1.4 to about 1.6, from about 1.45 to about 1.55, from about 1.49 to about 1.55, or any range or sub-range therebetween. In some embodiments, the differential equal to the absolute value of the difference between the second index of refraction of the foldable substrate 206, 407 or 807 and the first index of refraction of the polymer-based portion 241 may be about 0.1 or less, about 0.07 or less, about 0.05 or less, about 0.001 or more, about 0.01 or more, or about 0.02 or more. In some embodiments, the differential is from about 0.001 to about 0.1, from about 0.001 to about 0.07, from about 0.001 to about 0.05, from about 0.01 to about 0.1, from about 0.01 to about 0.07, from about 0.01 to about 0.05 , from about 0.02 to about 0.1, from about 0.02 to about 0.07, from about 0.02 to about 0.05, or in any range or sub-range therebetween. In some embodiments, the second index of refraction of the foldable substrate 206 , 407 or 807 may be greater than the first index of refraction of the polymer-based portion 241 . In some embodiments, the second index of refraction of the foldable substrate 206 , 407 or 807 may be less than the first index of refraction of the polymer-based portion 241 .

在一些實施例中,黏著層261可包含第三折射率。在一些實施例中,黏著層261之第三折射率可在以上關於基於聚合物之部分241之第一折射率論述的範圍中之一或多者內。在一些實施例中,等於黏著層261之第三折射率與基於聚合物之部分241之第一折射率之間的差之絕對值之微分可為約0.1或更小、約0.07或更小、約0.05或更小、約0.001或更大、約0.01或更大或約0.02或更大。在一些實施例中,該微分在自約0.001至約0.1、自約0.001至約0.07、自約0.001至約0.05、自約0.01至約0.1、自約0.01至約0.07、自約0.01至約0.05、自約0.02至約0.1、自約0.02至約0.07、自約0.02至約0.05之一範圍或其間之任一範圍或子範圍中。在一些實施例中,黏著層261之第三折射率可大於基於聚合物之部分241之第一折射率。在一些實施例中,黏著層261之第三折射率可小於基於聚合物之部分241之第一折射率。In some embodiments, the adhesive layer 261 may include a third index of refraction. In some embodiments, the third index of refraction of adhesion layer 261 may be within one or more of the ranges discussed above with respect to the first index of refraction of polymer-based portion 241 . In some embodiments, the differential equal to the absolute value of the difference between the third refractive index of the adhesive layer 261 and the first refractive index of the polymer-based portion 241 may be about 0.1 or less, about 0.07 or less, About 0.05 or less, about 0.001 or more, about 0.01 or more, or about 0.02 or more. In some embodiments, the differential is from about 0.001 to about 0.1, from about 0.001 to about 0.07, from about 0.001 to about 0.05, from about 0.01 to about 0.1, from about 0.01 to about 0.07, from about 0.01 to about 0.05 , from about 0.02 to about 0.1, from about 0.02 to about 0.07, from about 0.02 to about 0.05, or in any range or subrange therebetween. In some embodiments, the third index of refraction of the adhesion layer 261 may be greater than the first index of refraction of the polymer-based portion 241 . In some embodiments, the third index of refraction of the adhesion layer 261 may be less than the first index of refraction of the polymer-based portion 241 .

在一些實施例中,等於黏著層261之第三折射率與可折疊基板206、407或807之第二折射率之間的差之絕對值之微分可為約0.1或更小、約0.07或更小、約0.05或更小、約0.001或更大、約0.01或更大或約0.02或更大。在一些實施例中,該微分在自約0.001至約0.1、自約0.001至約0.07、自約0.001至約0.05、自約0.01至約0.1、自約0.01至約0.07、自約0.01至約0.05、自約0.02至約0.1、自約0.02至約0.07、自約0.02至約0.05之一範圍或其間之任一範圍或子範圍中。在一些實施例中,黏著層261之第三折射率可大於可折疊基板206、407或807之第二折射率。在一些實施例中,黏著層261之第三折射率可小於可折疊基板206、407或807之第二折射率。In some embodiments, the differential equal to the absolute value of the difference between the third refractive index of the adhesive layer 261 and the second refractive index of the foldable substrate 206, 407 or 807 may be about 0.1 or less, about 0.07 or more Small, about 0.05 or less, about 0.001 or more, about 0.01 or more, or about 0.02 or more. In some embodiments, the differential is from about 0.001 to about 0.1, from about 0.001 to about 0.07, from about 0.001 to about 0.05, from about 0.01 to about 0.1, from about 0.01 to about 0.07, from about 0.01 to about 0.05 , from about 0.02 to about 0.1, from about 0.02 to about 0.07, from about 0.02 to about 0.05, or in any range or sub-range therebetween. In some embodiments, the third index of refraction of the adhesive layer 261 may be greater than the second index of refraction of the foldable substrate 206 , 407 or 807 . In some embodiments, the third index of refraction of the adhesive layer 261 may be smaller than the second index of refraction of the foldable substrate 206 , 407 or 807 .

在一些實施例中,塗層251可包含第四折射率。在一些實施例中,塗層251之第四折射率可在以上關於基於聚合物之部分241之第一折射率論述的範圍中之一或多者內。在一些實施例中,等於塗層251之第四折射率與基於聚合物之部分241之第一折射率之間的差之絕對值之微分可為約0.1或更小、約0.07或更小、約0.05或更小、約0.001或更大、約0.01或更大或約0.02或更大。在一些實施例中,該微分在自約0.001至約0.1、自約0.001至約0.07、自約0.001至約0.05、自約0.01至約0.1、自約0.01至約0.07、自約0.01至約0.05、自約0.02至約0.1、自約0.02至約0.07、自約0.02至約0.05之一範圍或其間之任一範圍或子範圍中。在一些實施例中,塗層251之第四折射率可大於基於聚合物之部分241之第一折射率。在一些實施例中,塗層251之第四折射率可小於基於聚合物之部分241之第一折射率。In some embodiments, coating 251 may include a fourth index of refraction. In some embodiments, the fourth index of refraction of coating 251 may be within one or more of the ranges discussed above with respect to the first index of refraction of polymer-based portion 241 . In some embodiments, the differential equal to the absolute value of the difference between the fourth index of refraction of coating 251 and the first index of refraction of polymer-based portion 241 may be about 0.1 or less, about 0.07 or less, About 0.05 or less, about 0.001 or more, about 0.01 or more, or about 0.02 or more. In some embodiments, the differential is from about 0.001 to about 0.1, from about 0.001 to about 0.07, from about 0.001 to about 0.05, from about 0.01 to about 0.1, from about 0.01 to about 0.07, from about 0.01 to about 0.05 , from about 0.02 to about 0.1, from about 0.02 to about 0.07, from about 0.02 to about 0.05, or in any range or sub-range therebetween. In some embodiments, the fourth index of refraction of coating 251 may be greater than the first index of refraction of polymer-based portion 241 . In some embodiments, the fourth index of refraction of the coating 251 may be less than the first index of refraction of the polymer-based portion 241 .

在一些實施例中,塗層251之第四折射率與可折疊基板206、407或807之第二折射率之間的差之絕對值之微分可為約0.1或更小、約0.07或更小、約0.05或更小、約0.001或更大、約0.01或更大或約0.02或更大。在一些實施例中,該微分在自約0.001至約0.1、自約0.001至約0.07、自約0.001至約0.05、自約0.01至約0.1、自約0.01至約0.07、自約0.01至約0.05、自約0.02至約0.1、自約0.02至約0.07、自約0.02至約0.05之一範圍或其間之任一範圍或子範圍中。在一些實施例中,塗層251之第四折射率可大於可折疊基板206、407或807之第二折射率。在一些實施例中,塗層251之第四折射率可小於可折疊基板206、407或807之第二折射率。In some embodiments, the differential of the absolute value of the difference between the fourth index of refraction of coating 251 and the second index of refraction of foldable substrate 206, 407 or 807 may be about 0.1 or less, about 0.07 or less , about 0.05 or less, about 0.001 or more, about 0.01 or more, or about 0.02 or more. In some embodiments, the differential is from about 0.001 to about 0.1, from about 0.001 to about 0.07, from about 0.001 to about 0.05, from about 0.01 to about 0.1, from about 0.01 to about 0.07, from about 0.01 to about 0.05 , from about 0.02 to about 0.1, from about 0.02 to about 0.07, from about 0.02 to about 0.05, or in any range or sub-range therebetween. In some embodiments, the fourth index of refraction of coating 251 may be greater than the second index of refraction of foldable substrate 206 , 407 or 807 . In some embodiments, the fourth index of refraction of coating 251 may be less than the second index of refraction of foldable substrate 206 , 407 or 807 .

在一些實施例中,等於塗層251之第四折射率與黏著層261之第三折射率之間的差之絕對值之微分可為約0.1或更小、約0.07或更小、約0.05或更小、約0.001或更大、約0.01或更大或約0.02或更大。在一些實施例中,該微分在自約0.001至約0.1、自約0.001至約0.07、自約0.001至約0.05、自約0.01至約0.1、自約0.01至約0.07、自約0.01至約0.05、自約0.02至約0.1、自約0.02至約0.07、自約0.02至約0.05之一範圍或其間之任一範圍或子範圍中。在一些實施例中,塗層251之第四折射率可大於黏著層261之第三折射率。在一些實施例中,塗層251之第四折射率可小於黏著層261之第三折射率。In some embodiments, the differential equal to the absolute value of the difference between the fourth index of refraction of coating 251 and the third index of refraction of adhesion layer 261 may be about 0.1 or less, about 0.07 or less, about 0.05 or less, about 0.001 or more, about 0.01 or more, or about 0.02 or more. In some embodiments, the differential is from about 0.001 to about 0.1, from about 0.001 to about 0.07, from about 0.001 to about 0.05, from about 0.01 to about 0.1, from about 0.01 to about 0.07, from about 0.01 to about 0.05 , from about 0.02 to about 0.1, from about 0.02 to about 0.07, from about 0.02 to about 0.05, or in any range or sub-range therebetween. In some embodiments, the fourth index of refraction of the coating layer 251 may be greater than the third index of refraction of the adhesive layer 261 . In some embodiments, the fourth index of refraction of the coating layer 251 may be smaller than the third index of refraction of the adhesive layer 261 .

可折疊設備及/或可折疊基板可具有可描述為低能量故障或高能量故障之一故障模式。可折疊基板之故障模式可使用在第10圖中之平行板設備1001來量測。如下針對有效最小彎曲半徑描述,按50 µm/秒之速率將平行剛性不銹鋼板1003、1005一起移動,直至達成目標平行板距離1007。目標平行板距離1007為4 mm或可折疊設備及/或可折疊基板之有效最小彎曲半徑之兩倍中之較大者。接著,碳化鎢尖接觸探針在為距可折疊基板206之最外周邊30 mm之距離1009的衝擊位置1011處撞擊可折疊基板206。如本文中使用,若在破裂期間粒子以每秒1公尺(m/s)自可折疊基板206噴射,則破裂係高能量,且所述破裂導致多於2個裂縫分支。如本文中使用,若破裂導致2個或更少裂縫分支或不導致在破裂期間粒子以1 m/s或更大自可折疊基板206之噴射,則破裂係低能量。可藉由捕獲自當尖接觸探針接觸衝擊位置時至之後5,000微秒的可折疊設備之高速視訊來量測噴射之粒子之平均速度。The foldable device and/or the foldable substrate can have one failure mode that can be described as a low energy failure or a high energy failure. The failure mode of the foldable substrate can be measured using the parallel plate apparatus 1001 in Figure 10. As described below for the effective minimum bend radius, the parallel rigid stainless steel plates 1003, 1005 are moved together at a rate of 50 μm/sec until the target parallel plate distance 1007 is reached. The target parallel plate distance 1007 is the greater of 4 mm or twice the effective minimum bend radius of the foldable device and/or the foldable substrate. Next, the tungsten carbide tip contact probe strikes the foldable substrate 206 at an impact position 1011 that is a distance 1009 of 30 mm from the outermost periphery of the foldable substrate 206 . As used herein, if particles are ejected from the foldable substrate 206 at 1 meter per second (m/s) during rupture, the rupture is high energy and the rupture results in more than 2 crack branches. As used herein, a rupture is low energy if it results in 2 or fewer crack branches or does not result in ejection of particles from the foldable substrate 206 at 1 m/s or greater during rupture. The average velocity of the ejected particles can be measured by capturing high-speed video of the foldable device from when the tip contacts the probe contacting the impact location to 5,000 microseconds thereafter.

第9圖及第11圖至第12圖示意性圖示在一經折疊配置中的根據本揭露內容之實施例的測試可折疊設備1102及/或可折疊設備1201之一些實施例。如在第11圖中展示,測試可折疊設備1102經折疊,使得可折疊基板206之第二主表面205在經折疊之測試可折疊設備1102之內部上。在第11圖中展示之經折疊配置中,使用者將經由可折疊基板206檢視顯示裝置307,代替PET薄片1107,且因此將定位於第二主表面205之側上。如在第12圖中展示,可折疊設備401經折疊以形成經折疊設備1201,使得可折疊基板407之第二主表面405在經折疊之可折疊設備1201之外部上。在第12圖中,使用者將經由可折疊基板407檢視顯示裝置307,且因此將定位於第二主表面205之側上。在一些實施例中,如在第11圖至第12圖中展示,一可折疊設備可包含安裝於測試可折疊設備1102或可折疊設備1201(例如,第一主表面203或403、第一中心表面區209或409)上之一塗層251。在另外實施例中,使用者將經由塗層檢視顯示裝置307。在一些實施例中,雖未展示,但基於聚合物之部分241及/或黏著層261可安置於一額外基板(例如,基於玻璃之基板及/或基於陶瓷之基板,代替離型襯裡271或PET薄片1107)上,且該額外基板可安置於顯示裝置307上。Figures 9 and 11-12 schematically illustrate some embodiments of a test foldable device 1102 and/or foldable device 1201 in accordance with embodiments of the present disclosure in a folded configuration. As shown in FIG. 11 , the test foldable device 1102 is folded such that the second major surface 205 of the foldable substrate 206 is on the interior of the folded test foldable device 1102 . In the folded configuration shown in Figure 11, the user would view the display device 307 via the foldable substrate 206, instead of the PET sheet 1107, and would therefore be positioned on the side of the second major surface 205. As shown in FIG. 12 , foldable device 401 is folded to form folded device 1201 such that second major surface 405 of foldable substrate 407 is on the outside of folded foldable device 1201 . In Figure 12, the user will view the display device 307 through the foldable substrate 407 and will therefore be positioned on the side of the second major surface 205. In some embodiments, as shown in FIGS. 11-12, a foldable device may include a test foldable device 1102 or foldable device 1201 mounted on a test foldable device 1102 or 1201 (eg, first major surface 203 or 403, first center A coating 251 on the surface region 209 or 409). In other embodiments, the user would view the display device 307 through the coating. In some embodiments, although not shown, the polymer-based portion 241 and/or the adhesion layer 261 may be disposed on an additional substrate (eg, a glass-based substrate and/or a ceramic-based substrate in place of the release liner 271 or PET sheet 1107 ), and the additional substrate can be placed on the display device 307 .

如本文中使用,「可折疊」包括完全折疊、部分折疊、彎曲、撓曲或多個能力。如本文中使用,術語「出故障」、「故障」及類似者指破壞、毀壞、分層或裂縫傳播。當可折疊設備在約85℃及約85%相對濕度下保持在「X」半徑達24小時,若其抵抗住故障,則該可折疊設備達成「X」之有效彎曲半徑,或具有「X」之有效彎曲半徑,或包含「X」之有效彎曲半徑。同樣地,當可折疊設備在約85℃及約85%相對濕度下保持在「X」之平行板距離達24小時,若其抵抗住故障,則該可折疊設備達成「X」之平行板距離,或具有「X」之平行板距離,或包含「X」之平行板距離。As used herein, "foldable" includes the ability to fully fold, partially fold, bend, flex, or multiple. As used herein, the terms "failure", "failure" and the like refer to damage, destruction, delamination or propagation of cracks. When the foldable device is maintained at about 85°C and about 85% relative humidity at an "X" radius for 24 hours, the foldable device achieves an effective bend radius of "X", or has an "X" if it resists failure The effective bending radius of , or the effective bending radius including "X". Likewise, when the foldable device is maintained at the "X" parallel plate distance at about 85°C and about 85% relative humidity for 24 hours, the foldable device achieves the "X" parallel plate distance if it resists failure , or a parallel-to-plate distance with an "X", or a parallel-to-plate distance that includes an "X".

如本文中使用,使用包含一對平行剛性不銹鋼板1103、1105(包含一第一剛性不銹鋼板1103及一第二剛性不銹鋼板1105)之一平行板設備1101(見第11圖),藉由以下測試配置及過程量測可折疊設備之「有效最小彎曲半徑」及「平行板距離」。當量測「有效最小彎曲半徑」或「平行板距離」時,測試黏著層1109包含50 µm之厚度(例如,替代在第2圖至第5圖中之黏著層261)。當量測「有效最小彎曲半徑」或「平行板距離」時,測試係藉由聚對苯二甲酸乙二酯(polyethylene terephthalate;PET)之100 µm厚薄片1107進行,而非第2圖及第4圖之離型襯裡271或第3圖及第5圖中展示之顯示裝置307。因此,在判定可折疊設備之一配置之「有效最小彎曲半徑」或「平行板距離」之測試期間,藉由使用聚對苯二甲酸乙二酯(polyethylene terephthalate;PET)之100 µm厚薄片1107,而非第2圖及第4圖之離型襯裡271或第3圖及第5圖中展示之顯示裝置307,生產測試可折疊設備1102。當準備測試可折疊設備1102時,以與將離型襯裡271附著至黏著層261之第二接觸表面265(如在第2圖及第4圖中展示)或將顯示裝置307附著至黏著層261之第二接觸表面265(如在第3圖及第5圖中展示)相同之一方式將聚對苯二甲酸乙二酯(polyethylene terephthalate;PET)之100 µm厚薄片1107附著至測試黏著層1109。為了測試第6圖至第8圖之可折疊設備601、701及/或801,測試黏著層609及薄片607可同樣地如在第12圖之配置中展示般安裝,以對測試可折疊設備1102進行測試。測試可折疊設備1102置放於該對平行剛性不銹鋼板1103、1105之間,使得類似於第11圖中展示之配置,可折疊基板206、407或807將在彎曲部之內部上。為了判定「平行板距離」,該等平行板之間的距離按50 µm/秒之速率減小,直至平行板距離1111等於待測試之「平行板距離」。接著,在約85℃及約85%相對濕度下按「平行板距離」保持該等平行板待測試,達24小時。如本文中使用,「最小平行板距離」為在以上描述之條件及配置下可折疊設備可在無故障之情況下承受之最小平行板距離。為了判定「有效最小彎曲半徑」,該等平行板之間的距離按50 µm/秒之速率減小,直至平行板距離11等於待測試之「有效最小彎曲半徑」兩倍。接著,在約85℃及約85%相對濕度下按有效最小彎曲半徑兩倍保持該等平行板待測試,達24小時。如本文中使用,「有效最小彎曲半徑」為在以上描述之條件及配置下可折疊設備在無故障之情況下可承受之最小有效彎曲半徑。As used herein, a parallel plate apparatus 1101 (see FIG. 11 ) comprising a pair of parallel rigid stainless steel plates 1103, 1105 (including a first rigid stainless steel plate 1103 and a second rigid stainless steel plate 1105) is used, by the following Test configuration and process measurement of "effective minimum bending radius" and "parallel board distance" of foldable devices. When measuring the "effective minimum bend radius" or "parallel distance", the test adhesive layer 1109 includes a thickness of 50 µm (eg, in place of the adhesive layer 261 in Figures 2-5). When measuring the "effective minimum bending radius" or "parallel distance", the test is carried out with a 100 µm thick sheet 1107 of polyethylene terephthalate (PET), not Fig. 2 and Fig. 2. The release liner 271 in Figure 4 or the display device 307 shown in Figures 3 and 5. Therefore, during testing to determine the "effective minimum bend radius" or "parallel distance" of one configuration of foldable devices, by using a 100 µm thick sheet of polyethylene terephthalate (PET) 1107 , instead of the release liner 271 shown in Figures 2 and 4 or the display device 307 shown in Figures 3 and 5, the foldable device 1102 was produced and tested. When ready to test the foldable device 1102 , to attach the release liner 271 to the second contact surface 265 of the adhesive layer 261 (as shown in FIGS. 2 and 4 ) or to attach the display device 307 to the adhesive layer 261 The second contact surface 265 (as shown in Figures 3 and 5) of the 100 µm thick sheet 1107 of polyethylene terephthalate (PET) was attached to the test adhesive layer 1109 in the same manner . To test the foldable devices 601, 701 and/or 801 of FIGS. 6-8, the test adhesive layer 609 and sheet 607 may likewise be installed as shown in the configuration of FIG. 12 to test the foldable device 1102 carry out testing. The test foldable device 1102 was placed between the pair of parallel rigid stainless steel plates 1103, 1105 such that similar to the configuration shown in Figure 11, the foldable substrate 206, 407 or 807 would be on the inside of the bend. To determine the "parallel distance", the distance between the parallel plates is decreased at a rate of 50 µm/sec until the parallel plate distance 1111 is equal to the "parallel distance" to be tested. Next, the parallel plates were held for testing at about 85°C and about 85% relative humidity for 24 hours at a "parallel plate distance". As used herein, "minimum parallel plate distance" is the minimum parallel plate distance that a foldable device can withstand without failure under the conditions and configurations described above. To determine the "effective minimum bend radius", the distance between the parallel plates is reduced at a rate of 50 µm/sec until the parallel plate distance 11 is equal to twice the "effective minimum bend radius" to be tested. The parallel plates were then held for testing at about twice the effective minimum bend radius at about 85°C and about 85% relative humidity for 24 hours. As used herein, "effective minimum bend radius" is the smallest effective bend radius that a foldable device can withstand without failure under the conditions and configurations described above.

在一些實施例中,可折疊設備101、301、401、501、601、701、801及/或1201及/或測試可折疊設備1102可達成100 mm或更小、50 mm或更小、20 mm或更小、10 mm或更小、5 mm或更小或3 mm或更小之一平行板距離。在另外實施例中,可折疊設備101、301、401、501、601、701、801及/或1201及/或測試可折疊設備1102可達成50毫米(mm)或20 mm或10 mm或5 mm或3 mm之一平行板距離。在一些實施例中,可折疊設備101、301、401、501、601、701、801及/或1201及/或測試可折疊設備1102可包含約40 mm或更小、約20 mm或更小、約10 mm或更小、約5 mm或更小、約3 mm或更小、約1 mm或更小、約1 mm或更大、約3 mm或更大、約5 mm或更大或約10 mm或更大之一最小平行板距離。在一些實施例中,可折疊設備101、301、401、501、601、701、801及/或1201及/或測試可折疊設備1102可包含在自約1 mm至約40 mm、自約1 mm至約20 mm、自約1 mm至約10 mm、自約1 mm至約5 mm、自約1 mm至約3 mm、自約3 mm至約40 mm、自約3 mm至約40 mm、自約3 mm至約20 mm、自約3 mm至約10 mm、自約3 mm至約5 mm、自約5 mm至約10 mm之一範圍或其間之任一範圍或子範圍中的一有效最小彎曲半徑。In some embodiments, foldable devices 101, 301, 401, 501, 601, 701, 801, and/or 1201 and/or test foldable devices 1102 can achieve 100 mm or less, 50 mm or less, 20 mm One of the parallel plate distances of 10 mm or less, 5 mm or less, or 3 mm or less. In further embodiments, foldable devices 101 , 301 , 401 , 501 , 601 , 701 , 801 and/or 1201 and/or test foldable device 1102 may achieve 50 millimeters (mm) or 20 mm or 10 mm or 5 mm or one of the parallel plate distances of 3 mm. In some embodiments, foldable devices 101, 301, 401, 501, 601, 701, 801, and/or 1201 and/or test foldable device 1102 may comprise about 40 mm or less, about 20 mm or less, about 10 mm or less, about 5 mm or less, about 3 mm or less, about 1 mm or less, about 1 mm or more, about 3 mm or more, about 5 mm or more or about A minimum parallel plate distance of 10 mm or greater. In some embodiments, the foldable devices 101, 301, 401, 501, 601, 701, 801, and/or 1201 and/or the test foldable device 1102 can be included in a range from about 1 mm to about 40 mm, from about 1 mm to about 20 mm, from about 1 mm to about 10 mm, from about 1 mm to about 5 mm, from about 1 mm to about 3 mm, from about 3 mm to about 40 mm, from about 3 mm to about 40 mm, One of a range from about 3 mm to about 20 mm, from about 3 mm to about 10 mm, from about 3 mm to about 5 mm, from about 5 mm to about 10 mm, or any range or sub-range therebetween Effective minimum bend radius.

在一些實施例中,可折疊基板206、407或807之中心部分281、481及/或881之一寬度在長度105之方向106上界定於第一部分221、421或821與第二部分231、431或831之間。在一些實施例中,可折疊基板206、407或807之中心部分281、481及/或881之寬度可自第一部分221、421或821延伸至第二部分231、431或831。在一些實施例中,在長度105之方向106上界定於第一部分221、421或821與第二部分231、431或831之間的可折疊基板206、407或807之中心部分281、481或881之寬度可為有效最小彎曲半徑之約2.8倍或更大、約3倍或更大、約4倍或更大、約6倍或更小、約5倍或更小或約4倍或更小。在一些實施例中,作為有效最小彎曲半徑之倍數的中心部分281、481及/或881之寬度可在自約2.8倍至約6倍、自約2.8倍至約5倍、自約2.8倍至約4倍、自約3倍至約6倍、自約3倍至約5倍、自約3倍至約4倍、自約4倍至約6倍、自約4倍至約5倍之一範圍或其間之任一範圍或子範圍中。並不希望受到理論約束,在平行板之間的圓形配置中的一彎曲部分之長度可為約1.6倍平行板距離1111(例如,約3倍有效最小彎曲半徑、約3.2倍有效最小彎曲半徑)。在一些實施例中,可折疊基板206、407或807之中心部分281、481及/或881之寬度。在一些實施例中,可折疊基板206、407或807之中心部分281、481及/或881之寬度可為約2.8 mm或更大、約6 mm或更大、約9 mm或更大、約60 mm或更小、約40 mm或更小或約24 mm或更小。在一些實施例中,可折疊基板206、407或807之中心部分281、481及/或881之寬度可在自約2.8 mm至約60 mm、自約2.8 mm至約40 mm、自約2.8 mm至約24 mm、自約6 mm至約60 mm、自約6 mm至約40 mm、自約6 mm至約24 mm、自約9 mm至約60 mm、自約9 mm至約40 mm、自約9 mm至約24 mm之一範圍或其間之任一範圍或子範圍中。藉由針對中心部分(例如,在第一部分與第二部分之間)提供在以上指出之範圍內的一寬度,可有助於在無故障之情況下的可折疊設備之折疊。In some embodiments, a width of the central portion 281 , 481 and/or 881 of the foldable substrate 206 , 407 or 807 is defined in the direction 106 of the length 105 between the first portion 221 , 421 or 821 and the second portion 231 , 431 or between 831. In some embodiments, the width of the central portion 281 , 481 and/or 881 of the foldable substrate 206 , 407 or 807 may extend from the first portion 221 , 421 or 821 to the second portion 231 , 431 or 831 . In some embodiments, the central portion 281 , 481 or 881 of the foldable substrate 206 , 407 or 807 is defined between the first portion 221 , 421 or 821 and the second portion 231 , 431 or 831 in the direction 106 of the length 105 The width can be about 2.8 times or more, about 3 times or more, about 4 times or more, about 6 times or less, about 5 times or less, or about 4 times or less the effective minimum bend radius . In some embodiments, the width of the central portion 281, 481, and/or 881, which is a multiple of the effective minimum bend radius, can range from about 2.8 times to about 6 times, from about 2.8 times to about 5 times, from about 2.8 times to One of about 4 times, from about 3 times to about 6 times, from about 3 times to about 5 times, from about 3 times to about 4 times, from about 4 times to about 6 times, from about 4 times to about 5 times range or any range or subrange therebetween. Without wishing to be bound by theory, the length of a curved portion in a circular configuration between parallel plates can be about 1.6 times the parallel plate distance 1111 (eg, about 3 times the effective minimum bend radius, about 3.2 times the effective minimum bend radius ). In some embodiments, the width of the central portion 281 , 481 and/or 881 of the substrate 206 , 407 or 807 can be folded. In some embodiments, the width of the central portion 281 , 481 and/or 881 of the foldable substrate 206 , 407 or 807 may be about 2.8 mm or more, about 6 mm or more, about 9 mm or more, about 60 mm or less, about 40 mm or less, or about 24 mm or less. In some embodiments, the width of the central portion 281 , 481 and/or 881 of the foldable substrate 206 , 407 or 807 may range from about 2.8 mm to about 60 mm, from about 2.8 mm to about 40 mm, from about 2.8 mm to about 24 mm, from about 6 mm to about 60 mm, from about 6 mm to about 40 mm, from about 6 mm to about 24 mm, from about 9 mm to about 60 mm, from about 9 mm to about 40 mm, In a range from about 9 mm to about 24 mm, or any range or sub-range therebetween. By providing a width for the central portion (eg, between the first portion and the second portion) within the range indicated above, folding of the foldable device without failure may be facilitated.

可折疊設備101、301、401、501、601、701、801及1201可具有由可折疊設備之一區域(例如,包含第一部分221、421或821之一區域、包含第二部分231、431或831之一區域、包含基於聚合物之部分241之一區域及/或中央部分281、481或881)之能力界定之抗衝擊性,以避免當根據「筆掉落試驗」量測時在筆掉落高度(例如,5公分(cm)或更大、10公分或更大、20 cm或更大)處之故障。如本文中使用,進行「筆掉落試驗」使得藉由賦予至一主表面(例如,可折疊基板206、407或807之第二主表面205、405或805)之負荷(亦即,來自自某一高度掉落之筆)來測試可折疊設備之樣本,該主表面如同在平行板測試中的PET之100 µm厚薄片1107來配置,該PET附著至具有50 µm之一厚度的測試黏著層1109,而非第3圖及第5圖中展示之顯示裝置307或第2圖及第4圖之離型襯裡271。因而,筆掉落試驗中之PET層意在模擬可折疊電子顯示裝置(例如,OLED裝置)。在測試期間,結合至PET層之可折疊設備置放於鋁板(6063鋁合金,如藉由400砂紙拋光至一表面粗糙度)上,其中PET層與鋁板接觸。在樣本之擱置於鋁板上的側上不使用膠帶。The foldable devices 101, 301, 401, 501, 601, 701, 801, and 1201 may have an area composed of a foldable device (eg, an area including the first portion 221, 421, or 821, an area including the second portion 231, 431, or Impact resistance defined by the ability of an area of 831, including an area of the polymer-based portion 241 and/or the central portion 281, 481 or 881) to avoid falling of the pen when measured according to the "Pen Drop Test" Failures at drop heights (eg, 5 centimeters (cm) or more, 10 centimeters or more, 20 cm or more). As used herein, a "pen drop test" is performed by applying a load (ie, from a A pen dropped from a certain height) to test samples of foldable devices, the major surface was configured as a 100 µm thick sheet 1107 of PET in the parallel plate test attached to a test adhesive layer having a thickness of 50 µm 1109 instead of the display device 307 shown in Figures 3 and 5 or the release liner 271 of Figures 2 and 4. Thus, the PET layer in the pen drop test is intended to simulate a foldable electronic display device (eg, an OLED device). During the test, the foldable device bonded to the PET layer was placed on an aluminum plate (6063 aluminum alloy, eg polished to a surface roughness by 400 sandpaper) with the PET layer in contact with the aluminum plate. No tape was used on the side of the sample that rested on the aluminum panel.

將管用於筆掉落試驗以將筆導引至可折疊設備之外表面。對於第2圖至第8圖及第11圖至第12圖中之可折疊設備101、301、401、501、601、701、801及1201及/或測試可折疊設備1102,將筆導引至可折疊基板206、407或807之第二主表面205、405或805,且將管與可折疊基板206、407或807之第二主表面205、405或805接觸地置放,使得管之縱向軸線實質上垂直於第二主表面205、405或805,其中該管之縱向軸線在重力方向上延伸。該管具有1英吋(2.54 cm)之一外徑、一英吋之十六分之九(1.4 cm)之一內徑及90 cm之一長度。針對每一次試驗,使用一丙烯腈丁二烯(acrylonitrile butadiene;ABS)墊片在一預定高度處固持筆。在每一次掉落後,將管相對於樣本重新定位以導引筆至該樣本上之一不同衝擊位置。在筆掉落試驗中使用之筆為BIC Easy Glide筆,細,具有0.7 mm(0.68 mm)直徑之碳化鎢圓珠點尖,及包括帽5.73公克(g)(無帽時,4.68 g)之重量。The tube was used in a pen drop test to guide the pen to the outer surface of the foldable device. For foldable devices 101, 301, 401, 501, 601, 701, 801, and 1201 and/or test foldable device 1102 in Figures 2-8 and 11-12, direct the pen to The second major surface 205, 405 or 805 of the foldable base plate 206, 407 or 807 is folded and the tube is placed in contact with the second major surface 205, 405 or 805 of the foldable base plate 206, 407 or 807 such that the longitudinal direction of the tube is The axis is substantially perpendicular to the second major surface 205, 405 or 805, wherein the longitudinal axis of the tube extends in the direction of gravity. The tube has an outer diameter of 1 inch (2.54 cm), an inner diameter of nine sixteenths of an inch (1.4 cm), and a length of 90 cm. For each test, an acrylonitrile butadiene (ABS) spacer was used to hold the pen at a predetermined height. After each drop, the tube was repositioned relative to the sample to guide the pen to a different impact location on the sample. The pen used in the pen drop test was a BIC Easy Glide pen, thin, with a 0.7 mm (0.68 mm) diameter tungsten carbide bead point, and 5.73 grams (g) including cap (4.68 g without cap) weight.

對於筆掉落試驗,筆與附接至頂端(亦即,與尖端相對之端)之帽一起掉落,使得圓珠點可與測試樣本相互作用。在根據筆掉落試驗之掉落序列中,在1 cm之初始高度進行一個筆掉落,接著為按0.5 cm增量直至20 cm的連續掉落,且接著在20 cm後,按2 cm增量,直至測試樣本有故障。在進行了每一掉落後,連同特定筆掉落高度一起記錄任何可觀測破裂、失效或樣本損壞之其他證據。使用筆掉落試驗,可根據相同掉落序列測試多個樣本,以產生具有改良之統計精確度的總體。對於筆掉落試驗,在每5次掉落後,且對於每一個測試之新樣本,應將筆改成新筆。此外,在樣本之中心處或附近的該樣本上之隨機位置進行所有筆掉落,無筆掉落在樣本之邊緣附近或上。For the pen drop test, the pen is dropped with a cap attached to the tip (ie, the end opposite the tip) so that the ball point can interact with the test sample. In the drop sequence according to the pen drop test, a pen drop was performed at an initial height of 1 cm, followed by successive drops in 0.5 cm increments up to 20 cm, and then after 20 cm, in 2 cm increments amount until the test sample fails. After each drop was made, record any observable breakage, failure, or other evidence of sample damage along with the specific pen drop height. Using the pen drop test, multiple samples can be tested against the same drop sequence to generate a population with improved statistical precision. For the pen drop test, the pen should be changed to a new pen after every 5 drops and for each new sample tested. In addition, all pen drops were performed at random locations on the sample at or near the center of the sample, with no pen drops near or on the edges of the sample.

為了筆掉落試驗之目的,「故障」意謂在層壓件中可見機械缺陷之形成。機械缺陷可為裂縫或塑膠變形(例如,表面凹痕)。裂縫可為表面裂縫或貫穿裂縫。裂縫可形成於層壓件之內或外表面上。裂縫可延伸穿過可折疊基板206、407或807及/或塗層之所有或一部分。可見機械缺陷具有0.2 mm或更大之一最小尺寸。For the purposes of the pen drop test, "failure" means the formation of mechanical defects visible in the laminate. Mechanical defects can be cracks or plastic deformations (eg surface dents). The cracks can be surface cracks or through cracks. Cracks can be formed in the laminate or on the outer surface. The cracks may extend through all or a portion of the foldable substrate 206, 407 or 807 and/or the coating. Visible mechanical defects have a minimum dimension of 0.2 mm or greater.

第53圖展示作為基於玻璃之基板的以微米計之厚度5301之函數的在基於玻璃之基板之第一主表面上的以兆帕斯卡(MPa)計之最大主應力5303之一曲線5305,其係基於至基於玻璃之基板之第二主表面上的2 cm之筆掉落高度。如在第53圖中展示,基於玻璃之薄片之第一主表面上的最大主應力在65 µm附近最大。此表明,可藉由避免大約65 µm之厚度來改良筆掉落效能,例如,小於約50 µm或大於約80 µm。Figure 53 shows a curve 5305 of the maximum principal stress in megapascals (MPa) 5303 on the first major surface of the glass-based substrate as a function of the thickness 5301 in microns of the glass-based substrate, which is Based on a 2 cm pen drop height onto the second major surface of the glass-based substrate. As shown in Figure 53, the maximum principal stress on the first major surface of the glass-based sheet is greatest around 65 μm. This shows that pen drop performance can be improved by avoiding thicknesses of about 65 μm, eg, less than about 50 μm or greater than about 80 μm.

在一些實施例中,可折疊設備可抵抗在10公分(cm)、12 cm、14 cm、16 cm或20 cm之筆掉落高度處在包含第一部分221、421或821或第二部分231、431或831之一區域中的筆掉落之失敗。在一些實施例中,在包含第一部分221、421或821或第二部分231、431或831之一區域上,可折疊設備可在無故障之情況下承受的最大筆掉落高度可為約10 cm或更大、約12 cm或更大、約14 cm或更大、約16 cm或更大、約40 cm或更小或約30 cm或更小、約20 cm或更小、約18 cm或更小。在一些實施例中,在包含第一部分221、421或821或第二部分231、431或821之一區域上可折疊設備可在無故障之情況下承受的最大筆掉落高度可在自約10 cm至約40 cm、自約12 cm至約40 cm、自約12 cm至約30 cm、自約14 cm至約30 cm、自約14 cm至約20 cm、自約16 cm至約20 cm、自約18 cm至約20 cm之一範圍或其間之任一範圍或子範圍中。In some embodiments, the foldable device is resistant to a pen drop height of 10 centimeters (cm), 12 cm, 14 cm, 16 cm, or 20 cm, including the first portion 221, 421 or 821 or the second portion 231, Failed to drop the pen in one of the 431 or 831 areas. In some embodiments, the maximum pen drop height that the foldable device can withstand without failure over one of the areas including the first portion 221 , 421 or 821 or the second portion 231 , 431 or 831 can be about 10 cm or more, about 12 cm or more, about 14 cm or more, about 16 cm or more, about 40 cm or less or about 30 cm or less, about 20 cm or less, about 18 cm or smaller. In some embodiments, the maximum pen drop height that the foldable device can withstand without failure on one of the areas including the first portion 221 , 421 or 821 or the second portion 231 , 431 or 821 may be from about 10 cm to about 40 cm, from about 12 cm to about 40 cm, from about 12 cm to about 30 cm, from about 14 cm to about 30 cm, from about 14 cm to about 20 cm, from about 16 cm to about 20 cm , in a range from about 18 cm to about 20 cm, or any range or subrange therebetween.

在一些實施例中,可折疊設備可抵抗在1 cm、2 cm、3 cm、4 cm、5 cm或更大之筆掉落高度處在包含第一部分221、421或821與第二部分231、431或831之間的基於聚合物之部分241之一區域(例如,中心部分281、481或881)中的筆掉落之失敗。在一些實施例中,在包含在第一部分221、421或821與第二部分231、431或831之間的基於聚合物之部分241之一區域上可折疊設備可在無故障之情況下承受的最大筆掉落高度可為約1 cm或更大、約2 cm或更大、約3 cm或更大、約4 cm或更大、約20 cm或更小、約10 cm或更小、約8 cm或更小或約6 cm或更小。在一些實施例中,在包含在第一部分221、421或821與第二部分231、431或831之間的基於聚合物之部分241之一區域上可折疊設備可在無故障之情況下承受的最大筆掉落高度可在自約1 cm至約20 cm、自約2 cm至約20 cm、自約2 cm至約10 cm、自約3 cm至約10 cm、自約3 cm至約8 cm、自約4 cm至約8 cm、自約4 cm至約6 cm之一範圍或其間之任一範圍或子範圍中。在一些實施例中,在包含在第一部分221、421或821與第二部分231、431或831之間的基於聚合物之部分241之一區域上可折疊設備可在無故障之情況下承受的最大筆掉落高度可在自約1 cm至約10 cm、自約1 cm至約8 cm、自約1 cm至約5 cm、自約2 cm至約5 cm、自約3 cm至約5 cm、自約4 cm至約5 cm之一範圍或其間之任一範圍或子範圍中。In some embodiments, the foldable device is resistant to a pen drop height of 1 cm, 2 cm, 3 cm, 4 cm, 5 cm, or greater comprising the first portion 221, 421 or 821 and the second portion 231, Pen drop failure in one of the regions of the polymer-based portion 241 between 431 or 831 (eg, central portion 281, 481 or 881). In some embodiments, the foldable device can withstand without failure on an area of the polymer-based portion 241 comprised between the first portion 221 , 421 or 821 and the second portion 231 , 431 or 831 The maximum pen drop height can be about 1 cm or more, about 2 cm or more, about 3 cm or more, about 4 cm or more, about 20 cm or less, about 10 cm or less, about 8 cm or less or about 6 cm or less. In some embodiments, the foldable device can withstand without failure on an area of the polymer-based portion 241 comprised between the first portion 221 , 421 or 821 and the second portion 231 , 431 or 831 The maximum pen drop height can be from about 1 cm to about 20 cm, from about 2 cm to about 20 cm, from about 2 cm to about 10 cm, from about 3 cm to about 10 cm, from about 3 cm to about 8 cm cm, in a range of from about 4 cm to about 8 cm, from about 4 cm to about 6 cm, or in any range or sub-range therebetween. In some embodiments, the foldable device can withstand without failure on an area of the polymer-based portion 241 comprised between the first portion 221 , 421 or 821 and the second portion 231 , 431 or 831 The maximum pen drop height can be from about 1 cm to about 10 cm, from about 1 cm to about 8 cm, from about 1 cm to about 5 cm, from about 2 cm to about 5 cm, from about 3 cm to about 5 cm cm, in a range from about 4 cm to about 5 cm, or any range or subrange therebetween.

可藉由可折疊設備使用最小力來達成預定平行板距離。以上描述的第11圖之平行板設備1101用來量測本揭露內容之實施例之可折疊設備之「閉合力」。量測自平配置(例如,見第1圖)變為包含預定平行板距離的彎曲(例如,經折疊)配置(例如,見第9圖及第11圖至第12圖)之力。在一些實施例中,將可折疊設備自平配置彎曲至10 mm之平行板距離的力可為約20牛頓(N)或更小、15 N或更小、約12 N或更小、約10 N或更小、約0.1 N或更大、約0.5 N或更大、約1 N或更大、約2 N或更大、約5 N或更大。在一些實施例中,將可折疊設備自平配置彎曲至10 mm之平行板距離的力可在自約0.1 N至約20 N、自約0.5 N至約20 N、自約0.5 N至約15 N、自約1 N至約15 N、自約1 N至約12 N、自約2 N至約12 N、自約2 N至約10 N、自約5 N至約10 N之一範圍或其間之任一範圍或子範圍中。在一些實施例中,將可折疊設備自平配置彎曲至3 mm之平行板距離的力可為約10 N或更小、約8 N或更小、6 N或更小、約4 N或更小、約3 N或更小、約0.05 N或更大、約0.1 N或更大、約0.5 N或更大、約1 N或更大、約2 N或更大、約3 N或更大。在一些實施例中,將可折疊設備自平配置彎曲至3 mm之平行板距離的力可在自約0.05 N至約10 N、自約0.1 N至約10 N、自約0.1 N至約8 N、自約0.5 N至約8 N、自約0.5 N至約6 N、自約1 N至約6 N、自約1 N至約4 N、自約2 N至約4 N、自約2 N至約3 N之一範圍或其間之任一範圍或子範圍中。The predetermined parallel plate distance can be achieved by the foldable device using minimal force. The parallel-plate apparatus 1101 of FIG. 11 described above is used to measure the "closing force" of the foldable apparatus of the embodiments of the present disclosure. The force was measured from a flat configuration (eg, see Figure 1) to a curved (eg, folded) configuration (eg, see Figures 9 and 11-12) that includes a predetermined parallel-plate distance. In some embodiments, the force to bend the foldable device from a flat configuration to a parallel-plate distance of 10 mm may be about 20 Newtons (N) or less, 15 N or less, about 12 N or less, about 10 N or less, about 0.1 N or more, about 0.5 N or more, about 1 N or more, about 2 N or more, about 5 N or more. In some embodiments, the force to bend the foldable device from a flat configuration to a parallel-panel distance of 10 mm may range from about 0.1 N to about 20 N, from about 0.5 N to about 20 N, from about 0.5 N to about 15 N N, a range from about 1 N to about 15 N, from about 1 N to about 12 N, from about 2 N to about 12 N, from about 2 N to about 10 N, from about 5 N to about 10 N, or in any range or subrange in between. In some embodiments, the force to bend the foldable device from a flat configuration to a parallel-panel distance of 3 mm can be about 10 N or less, about 8 N or less, 6 N or less, about 4 N or less Small, about 3 N or less, about 0.05 N or more, about 0.1 N or more, about 0.5 N or more, about 1 N or more, about 2 N or more, about 3 N or more . In some embodiments, the force to bend the foldable device from a flat configuration to a parallel-panel distance of 3 mm can range from about 0.05 N to about 10 N, from about 0.1 N to about 10 N, from about 0.1 N to about 8 N, from about 0.5 N to about 8 N, from about 0.5 N to about 6 N, from about 1 N to about 6 N, from about 1 N to about 4 N, from about 2 N to about 4 N, from about 2 In a range of N to about 3 N or any range or subrange therebetween.

在一些實施例中,將可折疊設備自平配置彎曲至10 mm之平行板距離的可折疊設備之每寬度103之力可為約每毫米20牛頓(N/mm)或更小、0.15 N/mm或更小、約0.12 N/mm或更小、約0.10 N/mm或更小、約0.001 N/mm或更大、約0.005 N/mm或更大、約0.01 N/mm或更大、約0.02 N/mm或更大、約0.05 N/mm或更大。在一些實施例中,將可折疊設備自平配置彎曲至0.10/mm之平行板距離的可折疊設備之每寬度103之力可在自約0.001 N/mm至約0.20 N/mm、自約0.005 N/mm至約0.20 N/mm、自約0.005 N/mm至約0.15 N/mm、自約0.01 N/mm至約0.15 N/mm、自約0.01 N/mm至約0.12 N/mm、自約0.02 N/mm至約0.12 N/mm、自約0.02 N/mm至約0.10 N/mm、自約0.05 N/mm至約0.10 N/mm之一範圍或其間之任一範圍或子範圍中。在一些實施例中,將可折疊設備自平配置彎曲至3 mm之平行板距離的可折疊設備之每寬度103之力可為約0.10 N/mm或更小、約0.08 N/mm或更小、約0.06 N/mm或更小、約0.04 N/mm或更小、約0.03 N/mm或更小、約0.0005 N/mm或更大、約0.001 N/mm或更大、約0.005 N/mm或更大、約0.01 N/mm或更大、約0.02 N/mm或更大、約0.03 N/mm或更大。在一些實施例中,將可折疊設備自平配置彎曲至3 mm之平行板距離的可折疊設備之每寬度103之力可在自約0.0005 N/mm至約0.10 N/mm、自約0.001 N/mm至約0.10 N/mm、自約0.001 N/mm至約0.08 N/mm、自約0.005 N/mm至約0.08 N/mm、自約0.005 N/mm至約0.06 N/mm、自約0.01 N/mm至約0.06 N/mm、自約0.01 N/mm至約0.04 N/mm、自約0.02 N/mm至約0.04 N/mm、自約0.02 N/mm至約0.03 N/mm之一範圍或其間之任一範圍或子範圍中。In some embodiments, the force per width 103 of the foldable device bending the foldable device from a flat configuration to a parallel-panel distance of 10 mm may be about 20 Newtons per millimeter (N/mm) or less, 0.15 N/ mm or less, about 0.12 N/mm or less, about 0.10 N/mm or less, about 0.001 N/mm or more, about 0.005 N/mm or more, about 0.01 N/mm or more, About 0.02 N/mm or more, about 0.05 N/mm or more. In some embodiments, the force per width 103 of the foldable device to bend the foldable device from a flat configuration to a parallel-panel distance of 0.10/mm can range from about 0.001 N/mm to about 0.20 N/mm, from about 0.005 N/mm to about 0.20 N/mm, from about 0.005 N/mm to about 0.15 N/mm, from about 0.01 N/mm to about 0.15 N/mm, from about 0.01 N/mm to about 0.12 N/mm, from In a range from about 0.02 N/mm to about 0.12 N/mm, from about 0.02 N/mm to about 0.10 N/mm, from about 0.05 N/mm to about 0.10 N/mm, or in any range or sub-range therebetween . In some embodiments, the force per width 103 of the foldable device to bend the foldable device from a flat configuration to a parallel-panel distance of 3 mm may be about 0.10 N/mm or less, about 0.08 N/mm or less , about 0.06 N/mm or less, about 0.04 N/mm or less, about 0.03 N/mm or less, about 0.0005 N/mm or more, about 0.001 N/mm or more, about 0.005 N/mm mm or more, about 0.01 N/mm or more, about 0.02 N/mm or more, about 0.03 N/mm or more. In some embodiments, the force per width 103 of the foldable device to bend the foldable device from a flat configuration to a parallel-panel distance of 3 mm can range from about 0.0005 N/mm to about 0.10 N/mm, from about 0.001 N /mm to about 0.10 N/mm, from about 0.001 N/mm to about 0.08 N/mm, from about 0.005 N/mm to about 0.08 N/mm, from about 0.005 N/mm to about 0.06 N/mm, from about 0.01 N/mm to about 0.06 N/mm, from about 0.01 N/mm to about 0.04 N/mm, from about 0.02 N/mm to about 0.04 N/mm, from about 0.02 N/mm to about 0.03 N/mm in a range or any range or sub-range therebetween.

提供一塗層可使低的力能夠達成小平行板距離。並不希望受到理論約束,包含小於可折疊基板之模數的一模數之塗層可導致比在使用基於玻璃之基板及/或基於陶瓷之基板之情況下遠離塗層(例如,面向使用者之表面)移位的可折疊基板之中性軸。並不希望受到理論約束,提供具有約200 µm或更小之厚度的塗層可導致比在使用一較厚基板之情況下遠離塗層(例如,面向使用者之表面)移位的可折疊基板之中性軸。並不希望受到理論約束,遠離塗層(例如,面向使用者之表面)移位的可折疊基板部分之中性軸可使低的力能夠達成小平行板距離,此係因為其減小了拉伸應力之集中及可折疊基板之一部分之所得變形(由於拉伸應力散佈於可折疊基板之較大部分上)。Providing a coating enables low forces to achieve small parallel plate distances. Without wishing to be bound by theory, a coating comprising a modulus less than that of a foldable substrate may result in a coating that is farther away from the coating (eg, user-facing the neutral axis of the displaced foldable substrate. Without wishing to be bound by theory, providing a coating with a thickness of about 200 µm or less can result in a foldable substrate that is displaced away from the coating (eg, the user-facing surface) than would be the case with a thicker substrate neutral axis. Without wishing to be bound by theory, the neutral axis of the foldable substrate portion displaced away from the coating (eg, the user-facing surface) enables low forces to achieve small parallel plate distances because it reduces pull The concentration of tensile stress and the resulting deformation of a portion of the foldable substrate (due to the spread of the tensile stress over a larger portion of the foldable substrate).

根據本揭露內容之實施例的製作可折疊設備及/或可折疊基板之方法之實施例將參考第15圖至第18圖中之流程圖及在第19圖至第52圖中圖示之實例方法步驟來論述。Embodiments of methods of making foldable devices and/or foldable substrates according to embodiments of the present disclosure will refer to the flowcharts in FIGS. 15-18 and the examples illustrated in FIGS. 19-52 method steps are discussed.

現將參看第19圖至第24圖及第50圖至第52圖及第15圖中之流程圖來論述製作在第2圖至第3圖、第6圖及第11圖至第12圖中圖示之可折疊設備101、301、601及/或1201、測試可折疊設備1102及/或可折疊基板206之實例實施例。在本揭露內容之方法之第一步驟1501中,方法可開始於提供一可折疊基板206。在一些實施例中,可藉由購買或以其他方式獲得基板或藉由形成可折疊基板來提供可折疊基板206。如上論述,可折疊基板206可包含一核心層207,其定位於一第一外層213與一第二外層215之間。在一些實施例中,可折疊基板206之核心層207、第一外層213及/或第二外層215可包含一基於玻璃之基板及/或一基於陶瓷之基板。在另外實施例中,基於玻璃之基板及/或基於陶瓷之基板可藉由以多種條帶形成製程(例如,槽拉、下拉、熔融下拉、上拉、壓滾、重拉或浮動)來形成其而提供。在另外實施例中,可藉由加熱基於玻璃之基板以使一或多個陶瓷晶體結晶來提供基於陶瓷之基板。可折疊基板206可包含可沿著一平面延伸之一第二主表面205(見第20圖至第21圖)。第二主表面205可與第一主表面203相對。19 to 24 and 50 to 52 and 15, the flow charts produced in Figures 2 to 3, 6 and 11 to 12 will now be discussed Example embodiments of foldable devices 101 , 301 , 601 and/or 1201 , test foldable device 1102 and/or foldable substrate 206 are illustrated. In a first step 1501 of the method of the present disclosure, the method may begin by providing a foldable substrate 206 . In some embodiments, the foldable substrate 206 may be provided by purchasing or otherwise obtaining the substrate or by forming a foldable substrate. As discussed above, the foldable substrate 206 can include a core layer 207 positioned between a first outer layer 213 and a second outer layer 215 . In some embodiments, the core layer 207, the first outer layer 213, and/or the second outer layer 215 of the foldable substrate 206 may comprise a glass-based substrate and/or a ceramic-based substrate. In further embodiments, glass-based substrates and/or ceramic-based substrates may be formed by various strip-forming processes (eg, slot draw, draw down, fusion draw, pull up, roll, redraw, or float) it is provided. In further embodiments, the ceramic-based substrate may be provided by heating the glass-based substrate to crystallize one or more ceramic crystals. The foldable substrate 206 can include a second major surface 205 that can extend along a plane (see FIGS. 20-21 ). The second major surface 205 may be opposite to the first major surface 203 .

舉例而言,如在第19圖中展示,可使用一層壓熔融拉製設備1901來生產可折疊基板206。如所展示,層壓熔融拉製設備1901可包含定位於一下部形成裝置1904上之一上部形成裝置1902。在一些實施例中,如所展示,上部形成裝置1902可包含經配置以收納第一熔融材料1906之一第一槽1910,且下部形成裝置1904可包含經配置以收納第二熔融材料1908之一第二槽1912。在一些實施例中,第二熔融材料1908可溢出第二槽1912,且在下部形成裝置1904之對應的外形成表面1916及1918上流動。在另外實施例中,如所展示,外形成表面1916及1918可在下部形成裝置1904之根部1920處會聚,以形成可經冷卻以形成核心層207之一核心熔融層1932。在一些實施例中,第一熔融材料1906可溢出第一槽1910,且在上部形成裝置1902之對應的外表面1922及1924上流動。在另外實施例中,第一熔融材料1906可由上部形成裝置1902偏轉,使得第一熔融材料1906在下部形成裝置1904周圍流動且接觸第二熔融材料1908,因為第二熔融材料在下部形成裝置1904之對應的外形成表面1916及1918上流動。在更另外實施例中,第一熔融材料1906可形成可經冷卻以形成第一外層213之第一熔融外層1934,且第一熔融材料1906可形成可經冷卻以形成第二外層215之第二熔融外層1936。在再另外實施例中,如所展示,核心熔融層1932可定位於根部1920下方,在第一熔融外層1934與第二熔融外層1936之間。在再另外實施例中,在根部1920處包含第一熔融外層1934及第二熔融外層1936的第一熔融材料1906之溫度可高於包含第一熔融外層1903及第二熔融外層1936的第一熔融材料1906之軟化點。在再另外實施例中,在根部1920處包含核心熔融層1932的第二熔融材料1908之溫度可高於包含核心熔融層1932的第二熔融材料1908之軟化點。在又另外實施例中,可將第一熔融外層1934層壓至核心熔融層1932(例如,可將第一外層213層壓至第2圖至第3圖及第6圖中的核心層207之第三內表面208),及/或可將第二熔融外層1936層壓至核心熔融層1932(例如,可將第二外層215層壓至第2圖至第3圖及第6圖中的核心層207之第四內表面218),以形成第20圖至第21中展示之可折疊基板206。For example, as shown in Figure 19, a lamination melt draw apparatus 1901 may be used to produce foldable substrate 206. As shown, the lamination melt draw apparatus 1901 can include an upper forming device 1902 positioned on a lower forming device 1904 . In some embodiments, as shown, upper forming device 1902 can include one of first slots 1910 configured to receive first molten material 1906 and lower forming device 1904 can include one of second molten material 1908 configured to receive The second slot 1912. In some embodiments, the second molten material 1908 can overflow the second groove 1912 and flow over the corresponding outer forming surfaces 1916 and 1918 of the lower forming device 1904 . In further embodiments, as shown, outer forming surfaces 1916 and 1918 may converge at root 1920 of lower forming device 1904 to form a core melt layer 1932 that may be cooled to form core layer 207 . In some embodiments, the first molten material 1906 can overflow the first groove 1910 and flow over the corresponding outer surfaces 1922 and 1924 of the upper forming device 1902 . In further embodiments, the first molten material 1906 may be deflected by the upper forming device 1902 such that the first molten material 1906 flows around the lower forming device 1904 and contacts the second molten material 1908 as the second molten material is between the lower forming device 1904 Flow on corresponding outer forming surfaces 1916 and 1918. In still further embodiments, the first molten material 1906 can form a first molten outer layer 1934 that can be cooled to form the first outer layer 213 and the first molten material 1906 can form a second molten material 1906 that can be cooled to form the second outer layer 215 Melt the outer layer 1936. In still further embodiments, as shown, the core molten layer 1932 may be positioned below the root 1920, between the first molten outer layer 1934 and the second molten outer layer 1936. In yet other embodiments, the temperature of the first molten material 1906 comprising the first molten outer layer 1934 and the second molten outer layer 1936 at the root 1920 may be higher than the temperature of the first molten material comprising the first molten outer layer 1903 and the second molten outer layer 1936 Softening point of material 1906. In yet other embodiments, the temperature of the second molten material 1908 comprising the core melt layer 1932 at the root 1920 may be higher than the softening point of the second melt material 1908 comprising the core melt layer 1932. In yet other embodiments, the first fused outer layer 1934 can be laminated to the core fused layer 1932 (eg, the first outer layer 213 can be laminated to between the core layers 207 in FIGS. 2-3 and 6 third inner surface 208 ), and/or second outer fused layer 1936 may be laminated to core fused layer 1932 (eg, second outer layer 215 may be laminated to the core of FIGS. 2-3 and 6 the fourth inner surface 218 of layer 207) to form the foldable substrate 206 shown in FIGS. 20-21.

在一些實施例中,核心層207之密度可大於第一外層213之第一密度及/或第二外層215之第二密度。在一些實施例中,核心層207之網路擴張係數可小於第一外層213之網路擴張係數及/或第二外層215之網路擴張係數。在一些實施例中,核心層207之熱膨脹係數可大於第一外層213之熱膨脹係數及/或第二外層215之熱膨脹係數。In some embodiments, the density of the core layer 207 may be greater than the first density of the first outer layer 213 and/or the second density of the second outer layer 215 . In some embodiments, the network expansion factor of the core layer 207 may be smaller than the network expansion factor of the first outer layer 213 and/or the network expansion factor of the second outer layer 215 . In some embodiments, the thermal expansion coefficient of the core layer 207 may be greater than the thermal expansion coefficient of the first outer layer 213 and/or the thermal expansion coefficient of the second outer layer 215 .

在一些實施例中,在步驟1501中,可折疊基板206可具備暴露核心層207之第一中心表面區209的在可折疊基板206之第一主表面203中之一第一凹座234,及/或暴露核心層207之第二中心表面區219的在可折疊基板206之第二主表面205中之一第二凹座244。在另外實施例中,該(等)凹座(例如,第一凹座234、第二凹座244)可藉由蝕刻、雷射燒蝕或機械加工第一主表面203及/或第二主表面205來形成。舉例而言,蝕刻製程可類似於以下論述之步驟1503、1505及1507。舉例而言,機械加工可折疊基板206可類似於以下論述之步驟1517。In some embodiments, in step 1501, the foldable substrate 206 can have a first recess 234 in the first major surface 203 of the foldable substrate 206 exposing the first central surface region 209 of the core layer 207, and /or a second recess 244 in the second major surface 205 of the foldable substrate 206 that exposes the second central surface region 219 of the core layer 207 . In further embodiments, the recess(s) (eg, first recess 234, second recess 244) may be processed by etching, laser ablation, or machining of first major surface 203 and/or second major surface surface 205 to form. For example, the etching process may be similar to steps 1503, 1505, and 1507 discussed below. For example, machining the foldable substrate 206 may be similar to step 1517 discussed below.

在步驟1501後,在一些實施例中,核心層207可包含以氧化物為基礎之一核心現有平均鉀濃度及/或以氧化物為基礎之一核心現有平均鋰濃度。在一些實施例中,第一外層213可包含以氧化物為基礎之一第一現有平均鉀濃度及/或以氧化物為基礎之一第一現有平均鋰濃度。在一些實施例中,第二外層215可包含以氧化物為基礎之一第二現有平均鉀濃度及/或以氧化物為基礎之一第二現有平均鋰濃度。在一些實施例中,該核心現有平均鉀濃度為約百萬分之10,或大於第一現有平均鉀濃度及/或第二現有平均鉀濃度。在一些實施例中,第一現有平均鋰濃度及/或第二現有平均鋰濃度可為約百萬分之10,或大於核心現有平均鋰濃度。並不希望受到理論約束,在核心層中提供較大現有平均鉀濃度將減小作為化學強化製程之結果的核心層之膨脹,及/或減小核心層相對於第一外層及/或第二外層的化學強化之範圍。並不希望受到理論約束,在第一外層及/或第二外層中提供較大現有平均鋰濃度將減小化學強化之範圍,及/或增大作為化學強化製程之結果的對應層相對於核心層之膨脹。After step 1501, in some embodiments, the core layer 207 may comprise an oxide-based core existing average potassium concentration and/or an oxide-based core existing average lithium concentration. In some embodiments, the first outer layer 213 may comprise a first existing average potassium concentration on an oxide basis and/or a first existing average lithium concentration on an oxide basis. In some embodiments, the second outer layer 215 may comprise a second existing average potassium concentration based on oxide and/or a second average lithium concentration based on oxide. In some embodiments, the core existing average potassium concentration is about 10 parts per million, or greater than the first existing average potassium concentration and/or the second existing average potassium concentration. In some embodiments, the first existing average lithium concentration and/or the second existing average lithium concentration may be about 10 parts per million, or greater than the core existing average lithium concentration. Without wishing to be bound by theory, providing a larger existing average potassium concentration in the core layer will reduce the expansion of the core layer as a result of the chemical strengthening process, and/or reduce the core layer relative to the first outer layer and/or the second The extent of chemical strengthening of the outer layer. Without wishing to be bound by theory, providing a larger existing average lithium concentration in the first outer layer and/or the second outer layer will reduce the range of chemical strengthening, and/or increase the corresponding layer relative to the core as a result of the chemical strengthening process Expansion of layers.

在一些實施例中,在步驟1501後(例如,在包含化學強化可折疊基板206之步驟1509前),核心層可包含一或多種鹼金屬離子之核心擴散率。在一些實施例中,第一外層可包含一或多種鹼金屬離子之第一擴散率。在一些實施例中,第二外層可包含一或多種鹼金屬離子之第二擴散率。在一些實施例中,第一擴散率及/或第二擴散率可大於核心擴散率。在一些實施例中,該等擴散率可關乎鈉離子。在一些實施例中,該等擴散率可關乎鉀離子。並不希望受到理論約束,提供具有小於核心層中的相關聯之擴散率的一或多種鹼金屬離子之擴散率的第一外層及/或第二外層可增大第一外層及/或第二外層中相對於核心層之化學強化之範圍。在另外實施例中,可將第一比率定義為第一擴散率之平方根除以第一外層213之第一厚度(例如,第一外厚度217)。在另外實施例中,可將第二比率定義為第二擴散率之平方根除以第二外層215之第二厚度(例如,第二外厚度237)。在另外實施例中,可將核心比率定義為核心擴散率之平方根除以核心層207之中心厚度(例如,中心厚度227)。在另外實施例中,第一比率與核心比率之間的差可為約0.01 s-0.5 或更小。在更另外實施例中,第一比率可實質上等於核心比率。在另外實施例中,第二比率與核心比率之間的差可為約0.01 s-0.5 或更小。在更另外實施例中,第二比率可實質上等於核心比率。在另外實施例中,第一比率及/或第二比率與核心比率之間的差可為約0.00001 s-0.5 或更大、約0.0001 s-0.5 或更大、約0.001 s-0.5 或更大、約0.003 s-0.5 或更大、約0.1 s-0.5 或更小、約0.05 s-0.5 或更小、約0.02 s-0.5 或更小、約0.01 s-0.5 或更小或約0.008 s-0.5 或更小。在另外實施例中,第一比率及/或第二比率與核心比率之間的差可在自約0.00001 s-0.5 至約0.1 s-0.5 、自約0.0001 s-0.5 至約0.05 s-0.5 、自約0.001 s-0.5 至約0.02 s-0.5 、自約0.001 s-0.5 至約0.01 s-0.5 、自約0.003 s-0.5 至約0.01 s-0.5 、自約0.003 s-0.5 至約0.005 s-0.5 之一範圍或其間之任一範圍或子範圍中。並不希望受到理論約束,距化學強化之層深度與擴散率之平方根除以對應厚度成比例。提供第一比率、第二比率及/或核心比率可提供作為對應厚度之百分比的實質上相等層深度,此可減小可折疊基板中之化學強化誘發應變。In some embodiments, after step 1501 (eg, before step 1509 including chemically strengthening the foldable substrate 206 ), the core layer may include the core diffusivity of one or more alkali metal ions. In some embodiments, the first outer layer may comprise a first diffusivity of one or more alkali metal ions. In some embodiments, the second outer layer may comprise a second diffusivity of one or more alkali metal ions. In some embodiments, the first diffusivity and/or the second diffusivity may be greater than the core diffusivity. In some embodiments, the diffusivities may relate to sodium ions. In some embodiments, the diffusivities may relate to potassium ions. Without wishing to be bound by theory, providing a first outer layer and/or a second outer layer having a diffusivity of one or more alkali metal ions that is less than the associated diffusivity in the core layer can increase the first outer layer and/or the second outer layer The extent of chemical strengthening in the outer layer relative to the core layer. In further embodiments, the first ratio may be defined as the square root of the first diffusivity divided by the first thickness of the first outer layer 213 (eg, the first outer thickness 217). In further embodiments, the second ratio may be defined as the square root of the second diffusivity divided by the second thickness of the second outer layer 215 (eg, the second outer thickness 237 ). In further embodiments, the core ratio may be defined as the square root of the core diffusivity divided by the central thickness of the core layer 207 (eg, the central thickness 227). In further embodiments, the difference between the first ratio and the core ratio may be about 0.01 s - 0.5 or less. In still further embodiments, the first ratio may be substantially equal to the core ratio. In further embodiments, the difference between the second ratio and the core ratio may be about 0.01 s - 0.5 or less. In still further embodiments, the second ratio may be substantially equal to the core ratio. In further embodiments, the difference between the first ratio and/or the second ratio and the core ratio can be about 0.00001 s - 0.5 or more, about 0.0001 s - 0.5 or more, about 0.001 s - 0.5 or more , about 0.003 s - 0.5 or more, about 0.1 s - 0.5 or less, about 0.05 s - 0.5 or less, about 0.02 s - 0.5 or less, about 0.01 s - 0.5 or less, or about 0.008 s - 0.5 or less. In further embodiments, the difference between the first ratio and/or the second ratio and the core ratio may be from about 0.00001 s- 0.5 to about 0.1 s- 0.5 , from about 0.0001 s- 0.5 to about 0.05 s- 0.5 , from about 0.001 s- 0.5 to about 0.02 s- 0.5 , from about 0.001 s- 0.5 to about 0.01 s- 0.5 , from about 0.003 s- 0.5 to about 0.01 s- 0.5 , from about 0.003 s - 0.5 to about 0.005 s- 0.5 or any range or sub-range therebetween. Without wishing to be bound by theory, the depth of the layer from chemical strengthening is proportional to the square root of the diffusivity divided by the corresponding thickness. Providing the first ratio, the second ratio, and/or the core ratio can provide substantially equal layer depths as a percentage of the corresponding thicknesses, which can reduce chemical strengthening induced strain in the foldable substrate.

在步驟1501,在一些實施例中,方法可繼續進行至步驟1517,包含藉由機械加工可折疊基板206之第一主表面203及/或第二主表面205來形成第一凹座234及/或第二凹座244。第一凹座234可形成於可折疊基板206之第一主表面203中,其暴露核心層207之第一中心表面區209。第二凹座244可形成於可折疊基板206之第二主表面205中,其暴露核心層207之第二中心表面區219。舉例而言,第一主表面203及/或第二主表面205可藉由金剛石雕刻來機械加工,以在基於玻璃之基板及/或基於陶瓷之基板中產生非常精密之圖案。如在第20圖中展示,可使用金剛石雕刻來在可折疊基板206之第一主表面203中產生第一凹座234,其中可使用電腦數值控制(computer numerical control;CNC)機器2003來控制金剛石尖探針2001。可將不同於金剛石之材料用於藉由CNC機器雕刻。在一些實施例中,雖未展示,但可使用類似製程來形成可與第一凹座234相對之第二凹座244。應理解,可使用形成該(等)凹座之其他方法,例如,微影及雷射燒蝕。At step 1501 , in some embodiments, the method may proceed to step 1517 including forming the first recess 234 and/or by machining the first major surface 203 and/or the second major surface 205 of the foldable substrate 206 or the second recess 244 . A first recess 234 may be formed in the first major surface 203 of the foldable substrate 206 that exposes the first central surface region 209 of the core layer 207 . A second recess 244 may be formed in the second major surface 205 of the foldable substrate 206 that exposes the second central surface region 219 of the core layer 207 . For example, the first major surface 203 and/or the second major surface 205 can be machined by diamond engraving to create very precise patterns in glass-based substrates and/or ceramic-based substrates. As shown in Figure 20, diamond engraving can be used to create first pockets 234 in the first major surface 203 of the foldable substrate 206, wherein the diamond can be controlled using a computer numerical control (CNC) machine 2003 Sharp probe 2001. Materials other than diamond can be used for engraving by CNC machines. In some embodiments, although not shown, a similar process may be used to form the second recess 244 , which may be opposite the first recess 234 . It should be understood that other methods of forming the recess(s) may be used, such as lithography and laser ablation.

在步驟1501後,在一些實施例中,方法可繼續進行至步驟1503,包含在可折疊基板206之一或多個部分上安置一遮罩。在一些實施例中,如在第21圖中展示,步驟1503可包含在可折疊基板206之一或多個部分上安置第一液體2107。在另外實施例中,如所展示,可使用一容器2101(例如,管道、可撓性管、微量吸管或注射管)在可折疊基板206之一或多個部分上安置第一液體2107。在另外實施例中,如所展示,第一液體2107可安置於第一表面區223上,作為第一液體沉積物2103,及安置於第三表面區233上,作為第二液體沉積物2105。雖未展示,但應理解,類似液體沉積物可形成於第二表面區及/或第四表面區上。在另外實施例中,液體沉積物(例如,第21圖中展示之第一液體沉積物2103及第二液體沉積物2105)可經固化以形成遮罩(例如,第22圖中展示之第一遮罩2205及第三遮罩2209)。固化第一液體可包含加熱第一液體2107,藉由紫外線(UV)輻射輻照第一液體2107,及/或等候預定時間量(例如,自約30分鐘至24小時、自約1小時至約8小時)。在一些實施例中,可使用另一方法(例如,化學氣相沉積(chemical vapor deposition;CVD)(例如,低壓CVD、電漿增強型CVD)、物理氣相沉積(physical vapor deposition,PVD)(例如,蒸鍍、分子束磊晶、離子鍍敷)、原子層沉積(atomic layer deposition,ALD)、濺鍍、噴霧熱解、化學浴沉積、溶膠-凝膠沉積)來形成該(等)遮罩(例如,遮罩2205、2207、2209及2211)。如在第22圖中展示,步驟1503之結果可包含在第一表面區223上安置之第一遮罩2205、在第二表面區225上安置之第二遮罩2207、在第三表面區233上安置之第三遮罩2209及/或在第四表面區235上安置之第四遮罩2211。在一些實施例中,遮罩之材料可包含二氧化鈦(TiO2 )、氧化鋯(ZrO2 )、氧化錫(SnO2 )、氧化鋁(Al2 O3 )、矽石(SiO2 )、氮化矽(Si3 N4 )及/或其組合,但在其他實施例中可使用其他材料用於遮罩。After step 1501 , in some embodiments, the method may proceed to step 1503 including disposing a mask on one or more portions of the foldable substrate 206 . In some embodiments, as shown in FIG. 21 , step 1503 may include disposing a first liquid 2107 on one or more portions of the foldable substrate 206 . In further embodiments, as shown, a container 2101 (eg, tubing, flexible tubing, micropipette, or syringe) may be used to place the first liquid 2107 on one or more portions of the foldable substrate 206 . In further embodiments, as shown, the first liquid 2107 may be disposed on the first surface region 223 as the first liquid deposit 2103 and on the third surface region 233 as the second liquid deposit 2105. Although not shown, it should be understood that similar liquid deposits may be formed on the second surface region and/or the fourth surface region. In further embodiments, the liquid deposits (eg, the first liquid deposit 2103 and the second liquid deposit 2105 shown in FIG. 21 ) may be cured to form a mask (eg, the first liquid deposit shown in FIG. 22 ) mask 2205 and third mask 2209). Curing the first liquid can include heating the first liquid 2107, irradiating the first liquid 2107 with ultraviolet (UV) radiation, and/or waiting a predetermined amount of time (eg, from about 30 minutes to 24 hours, from about 1 hour to about 8 hours). In some embodiments, another method (eg, chemical vapor deposition (CVD) (eg, low pressure CVD, plasma enhanced CVD), physical vapor deposition (PVD) ( For example, evaporation, molecular beam epitaxy, ion plating), atomic layer deposition (ALD), sputtering, spray pyrolysis, chemical bath deposition, sol-gel deposition) to form the mask(s) Masks (eg, masks 2205, 2207, 2209, and 2211). As shown in FIG. 22, the result of step 1503 may include a first mask 2205 disposed on the first surface area 223, a second mask 2207 disposed on the second surface area 225, a second mask 2207 disposed on the third surface area 233 A third mask 2209 disposed on top and/or a fourth mask 2211 disposed on the fourth surface area 235. In some embodiments, the material of the mask may include titanium dioxide (TiO 2 ), zirconium oxide (ZrO 2 ), tin oxide (SnO 2 ), aluminum oxide (Al 2 O 3 ), silica (SiO 2 ), nitride Silicon (Si 3 N 4 ) and/or combinations thereof, although other materials may be used for the mask in other embodiments.

在步驟1503後,如在第22圖中展示,方法可繼續進行至步驟1505,包含蝕刻可折疊基板206。在一些實施例中,如所展示,蝕刻可包含將可折疊基板206曝露於一蝕刻劑2203。在另外實施例中,如所展示,蝕刻劑2203可為蝕刻劑浴2201中含有之液體蝕刻劑。在更另外實施例中,蝕刻溶液可包含一或多種無機酸(例如,HCl、HF、H2 SO4 、HNO3 )。在一些實施例中,如所展示,蝕刻可包含蝕刻第一主表面203之中心部分281以形成一第一中心表面區209。在另外實施例中,如所展示,第一中心表面區209可包含第三內表面208之一部分。在另外實施例中,如所展示,蝕刻可在第一平面204a與第一中心表面區209之間形成第一凹座234。在一些實施例中,第一凹座234之深度可實質上等於第一外層213之第一外厚度217(見第2圖至第3圖及第5圖)。在一些實施例中,雖未展示,但第一凹座之深度可大於第一外層之第一厚度。在一些實施例中,如所展示,蝕刻可包含蝕刻第二主表面205之中心部分281以形成一第二中心表面區219。在另外實施例中,如所展示,第二中心表面區219可包含第四內表面218之一部分。在另外實施例中,如所展示,蝕刻可在第二平面204b與第二中心表面區219之間形成第二凹座244。在一些實施例中,第二凹座244之深度可實質上等於第一外層213之第二外厚度237(見第2圖至第3圖及第5圖)。在一些實施例中,雖未展示,但第二凹座之深度可大於第二外層之第二厚度。After step 1503 , as shown in FIG. 22 , the method may continue to step 1505 , including etching the foldable substrate 206 . In some embodiments, etching can include exposing the foldable substrate 206 to an etchant 2203, as shown. In further embodiments, as shown, the etchant 2203 may be a liquid etchant contained in the etchant bath 2201 . In still further embodiments, the etching solution may include one or more inorganic acids (eg, HCl, HF , H2SO4 , HNO3 ). In some embodiments, as shown, etching can include etching a central portion 281 of the first major surface 203 to form a first central surface region 209 . In further embodiments, as shown, the first central surface region 209 may include a portion of the third inner surface 208 . In further embodiments, as shown, the etching may form a first recess 234 between the first plane 204a and the first central surface region 209 . In some embodiments, the depth of the first recess 234 may be substantially equal to the first outer thickness 217 of the first outer layer 213 (see FIGS. 2-3 and 5). In some embodiments, although not shown, the depth of the first recess may be greater than the first thickness of the first outer layer. In some embodiments, as shown, the etching can include etching the central portion 281 of the second major surface 205 to form a second central surface region 219 . In further embodiments, as shown, the second central surface region 219 may include a portion of the fourth inner surface 218 . In further embodiments, the etching may form a second recess 244 between the second plane 204b and the second central surface region 219, as shown. In some embodiments, the depth of the second recess 244 may be substantially equal to the second outer thickness 237 of the first outer layer 213 (see FIGS. 2-3 and 5). In some embodiments, although not shown, the depth of the second recess may be greater than the second thickness of the second outer layer.

在步驟1505後,如在第23圖中展示,方法可繼續進行至步驟1507,包含移除該(等)遮罩。在如所展示之一些實施例中,移除該(等)遮罩(例如,遮罩2205、2207、2209及2211)可包含在跨表面(例如,第三表面區233)之一方向2302上移動研磨工具2301。在更另外實施例中,使用該工具可包含掃掠、刮擦、研磨、推動等。在另外實施例中,該(等)遮罩(例如,遮罩2205、2207、2209及2211)可藉由用溶劑洗滌表面(例如,第一表面區223、第二表面區225、第三表面區233、第四表面區235)來移除。在一些實施例中,移除該(等)遮罩可包含分別自第一表面區223、第二表面區225、第三表面區233、第四表面區235移除遮罩2205、2207、2209及2211。After step 1505, as shown in FIG. 23, the method may proceed to step 1507, including removing the mask(s). In some embodiments as shown, removing the mask(s) (eg, masks 2205, 2207, 2209, and 2211) may include in a direction 2302 across the surface (eg, third surface region 233) Move the grinding tool 2301. In still further embodiments, using the tool may include sweeping, scraping, grinding, pushing, and the like. In further embodiments, the mask(s) (eg, masks 2205, 2207, 2209, and 2211) may be prepared by washing the surfaces (eg, first surface region 223, second surface region 225, third surface) with a solvent area 233, fourth surface area 235) to remove. In some embodiments, removing the mask(s) may include removing the masks 2205, 2207, 2209 from the first surface region 223, the second surface region 225, the third surface region 233, the fourth surface region 235, respectively and 2211.

此外或替代地,步驟1501、1507或1517可包含藉由自可折疊基板206之第二主表面205移除子層以暴露可包含在第2圖至第3圖及第6圖中圖示之第二主表面205的一新第二主表面(例如,藉由機械加工、藉由蝕刻、藉由微影、藉由燒蝕)來減小可折疊基板206之厚度。自第一主表面及第二主表面兩者移除子層可移除可折疊基板206之外子層,該等外子層可具有與可折疊基板206之對應層之下伏內部部分不一致的光學性質。因此,貫穿可折疊基板206之對應層之長度及寬度的全部厚度可具有更一致之光學性質,以跨全部可折疊基板206提供一致光學效能,具有極少或無失真。自第一主表面203移除子層及/或自第二主表面205移除子層可有益於移除在第一凹座234及/或第二凹座244之形成期間產生的表面瑕疵。舉例而言,機械加工第一主表面203及/或第二主表面205(例如,藉由金剛石尖探針)以產生第一凹座234及/或第二凹座244可產生可呈現弱點之微裂縫表面裂隙或其他瑕疵,在該等微裂縫表面裂隙或其他瑕疵處,在折疊後,可發生可折疊基板206之災難性故障。因此,藉由自第一主表面203移除子層及自第二主表面205移除子層,可移除在第一凹座234及/或第二凹座244之形成期間在子層中產生的表面瑕疵,其中可呈現具有較少表面瑕疵之新第一主表面及/或新第二主表面。因為存在較少表面瑕疵,所以可達成較小彎曲半徑,而無可折疊基板之故障。舉例而言,可折疊基板之某一加工可呈現在可折疊基板之第一主表面及第二主表面處的基於玻璃之材料性質及/或基於陶瓷之材料性質與在可折疊基板之中心部分處的差異。舉例而言,在下拉製製程期間,在該等主表面處的基於玻璃之材料及/或基於陶瓷之材料之性質可與中心部分不同。Additionally or alternatively, steps 1501 , 1507 or 1517 may include exposing the sub-layer by removing the sub-layer from the second major surface 205 of the foldable substrate 206 to expose the A new second major surface of second major surface 205 (eg, by machining, by etching, by lithography, by ablation) reduces the thickness of foldable substrate 206 . Removing sub-layers from both the first and second major surfaces may remove the outer sub-layers of the foldable substrate 206 , which outer sub-layers may have non-uniform interior portions of the foldable substrate 206 underlying corresponding layers optical properties. Accordingly, the entire thickness of the length and width of the corresponding layers of the foldable substrate 206 may have more consistent optical properties to provide consistent optical performance across the entire foldable substrate 206 with little or no distortion. Removing the sub-layer from the first major surface 203 and/or from the second major surface 205 may be beneficial for removing surface imperfections that were created during the formation of the first recess 234 and/or the second recess 244 . For example, machining the first major surface 203 and/or the second major surface 205 (eg, with a diamond-tipped probe) to create the first recess 234 and/or the second recess 244 may create a Microcracked surface cracks or other imperfections where, after folding, catastrophic failure of the foldable substrate 206 can occur. Thus, by removing the sub-layer from the first major surface 203 and the sub-layer from the second major surface 205, the removal of the sub-layer during the formation of the first recess 234 and/or the second recess 244 can be removed The resulting surface imperfections, wherein a new first major surface and/or a new second major surface with fewer surface imperfections can be present. Because there are fewer surface defects, smaller bend radii can be achieved without failure of the folded substrate. For example, a certain processing of the foldable substrate may exhibit glass-based material properties and/or ceramic-based material properties at the first and second major surfaces of the foldable substrate and at the central portion of the foldable substrate difference. For example, the properties of the glass-based material and/or ceramic-based material at the major surfaces may differ from the central portion during the down-draw process.

在步驟1501、1507或1517後,如在第24圖中展示,方法可繼續進行至步驟1509,包含化學強化可折疊基板206。當在可折疊基板206之表面之深度內的第一陽離子與具有比第一陽離子大之一半徑的在熔融鹽或鹽溶液2403內之第二陽離子交換時,可發生藉由離子交換進行的化學強化可折疊基板206(例如,第一外層、第二外層及/或核心層之基於玻璃之基板及/或基於陶瓷之基板)。舉例而言,在可折疊基板206之表面之深度內的鋰陽離子可與在鹽溶液2403內之鈉陽離子或鉀陽離子交換。因此,可折疊基板206之表面經壓縮置放且由此藉由離子交換製程來化學強化,此係由於鋰陽離子具有比鹽溶液2403內的交換之鈉陽離子或鉀陽離子之半徑小的半徑。化學強化可折疊基板206可包含使包含鋰陽離子及/或鈉陽離子的可折疊基板206之至少一部分與包含鹽溶液2403(包含硝酸鉀、磷酸鉀、氯化鉀、硫酸鉀、氯化鈉、硫酸鈉、硝酸鈉及/或磷酸鈉)之鹽浴2401接觸,藉此鋰陽離子及/或鈉陽離子自可折疊基板206擴散至鹽浴2401中含有之鹽溶液2403。在一些實施例中,鹽溶液2403之溫度可為約300℃或更大、約360℃或更大、約400℃或更大、約500℃或更小、約460℃或更小或約400℃或更小。在一些實施例中,鹽溶液2403之溫度可在自約300℃至約500℃、自約360℃至約500℃、自約400℃至約500℃、自約300℃至約460℃、自約360℃至約460℃、自約400℃至約460℃、自約300℃至約400℃、自約360℃至約400℃之一範圍或其間之任一範圍或子範圍中。在一些實施例中,可折疊基板206可與鹽溶液2403接觸達約15分鐘或更多、約1小時或更多、約3小時或更多、約48小時或更少、約24小時或更少或約8小時或更少。在一些實施例中,可折疊基板206可與鹽溶液2403接觸達在自約15分鐘至約48小時、自約1小時至約48小時、自約3小時至約48小時、自約15小時至約24小時、自約1小時至約24小時、自約3小時至約48小時、自約3小時至約24小時、自約3小時至約8小時之一範圍或其間之任一範圍或子範圍中的一時間。After steps 1501 , 1507 or 1517 , as shown in FIG. 24 , the method may continue to step 1509 including chemically strengthening the foldable substrate 206 . Chemical chemistry by ion exchange can occur when a first cation within the depth of the surface of the foldable substrate 206 exchanges with a second cation within the molten salt or salt solution 2403 having a radius larger than the first cation The foldable substrate 206 is strengthened (eg, glass-based substrate and/or ceramic-based substrate of the first outer layer, second outer layer, and/or core layer). For example, lithium cations within the depth of the surface of the foldable substrate 206 can be exchanged with sodium or potassium cations within the salt solution 2403. Thus, the surface of the foldable substrate 206 is compressed and thereby chemically strengthened by the ion exchange process, since the lithium cations have a smaller radius than the exchanged sodium or potassium cations in the salt solution 2403. Chemically strengthening the foldable substrate 206 may include mixing at least a portion of the foldable substrate 206 containing lithium cations and/or sodium cations with a salt solution 2403 (containing potassium nitrate, potassium phosphate, potassium chloride, potassium sulfate, sodium chloride, sulfuric acid) A salt bath 2401 of sodium, sodium nitrate and/or sodium phosphate) contacts, whereby lithium cations and/or sodium cations diffuse from the foldable substrate 206 to the salt solution 2403 contained in the salt bath 2401. In some embodiments, the temperature of the salt solution 2403 can be about 300°C or greater, about 360°C or greater, about 400°C or greater, about 500°C or less, about 460°C or less, or about 400°C °C or less. In some embodiments, the temperature of the salt solution 2403 can range from about 300°C to about 500°C, from about 360°C to about 500°C, from about 400°C to about 500°C, from about 300°C to about 460°C, from In a range of about 360°C to about 460°C, from about 400°C to about 460°C, from about 300°C to about 400°C, from about 360°C to about 400°C, or any range or sub-range therebetween. In some embodiments, foldable substrate 206 can be contacted with saline solution 2403 for about 15 minutes or more, about 1 hour or more, about 3 hours or more, about 48 hours or less, about 24 hours or more Less or about 8 hours or less. In some embodiments, the foldable substrate 206 can be contacted with the saline solution 2403 for from about 15 minutes to about 48 hours, from about 1 hour to about 48 hours, from about 3 hours to about 48 hours, from about 15 hours to about 24 hours, from about 1 hour to about 24 hours, from about 3 hours to about 48 hours, from about 3 hours to about 24 hours, from about 3 hours to about 8 hours, or any range or sub-range therebetween a time in the range.

化學強化可折疊基板206可包含化學強化第一中心表面區209,化學強化第一表面區223,化學強化第三表面區233,化學強化第二表面區225,化學強化第四表面區235,及化學強化第二中心表面區219。在一些實施例中,化學強化可包含化學強化第一部分221至距第一主表面203之第一表面區223的一第一壓縮深度,化學強化第一部分221至距第二主表面205之第二表面區225的一第二壓縮深度,化學強化第二部分231至距第一主表面203之第三表面區233的一第三壓縮深度,化學強化第二部分231至距第二主表面205之第四表面區235的一第四壓縮深度,化學強化中心部分281至距第一中心表面區209的一第一中心壓縮深度,及/或化學強化中心部分281至距第二中心表面區219的一第二中心壓縮深度。The chemically strengthened foldable substrate 206 can include a chemically strengthened first central surface region 209, a chemically strengthened first surface region 223, a chemically strengthened third surface region 233, a chemically strengthened second surface region 225, a chemically strengthened fourth surface region 235, and The second central surface region 219 is chemically strengthened. In some embodiments, chemical strengthening may include chemically strengthening the first portion 221 to a first compression depth from the first surface region 223 of the first major surface 203 , and chemically strengthening the first portion 221 to a second depth from the second major surface 205 . A second compression depth of the surface region 225 chemically strengthens the second portion 231 to a third compression depth of the third surface region 233 from the first main surface 203 and chemically strengthens the second portion 231 to a distance from the second main surface 205 a fourth depth of compression of fourth surface region 235, chemically strengthened central portion 281 to a first central compression depth of first central surface region 209, and/or chemically strengthened central portion 281 to a distance of chemically strengthened central portion 281 to second central surface region 219 A second central compression depth.

在步驟1509,可折疊基板206可包含一或多個壓縮應力區域(例如,第一、第二、第三、第四、第一中心及/或第二中心壓縮應力區域),其包含在以上關於對應的壓縮應力區域論述之一或多個範圍內的一壓縮深度及/或一相關聯之層深度。在另外實施例中,第一層深度、第二層深度、第三層深度或第四層深度中之一者除以基板厚度與第一中心層深度或第二中心層深度除以中心厚度之間的絕對差可在以上論述的範圍中之一或多者內。在另外實施例中,第一壓縮深度、第二壓縮深度、第三壓縮深度或第四壓縮深度中之一者除以基板厚度與第一中心壓縮深度或第二中心壓縮深度除以中心厚度之間的絕對差可在以上論述的範圍中之一或多者內。在另外實施例中,第一平均鉀濃度或第二平均鉀濃度與中心平均鉀濃度之間的絕對差可在以上論述的範圍中之一或多者內。At step 1509, the foldable substrate 206 may include one or more regions of compressive stress (eg, first, second, third, fourth, first central, and/or second central compressive stress regions), which are included above A compression depth and/or an associated layer depth within one or more ranges is discussed with respect to the corresponding compressive stress region. In another embodiment, one of the first layer depth, the second layer depth, the third layer depth, or the fourth layer depth is divided by the thickness of the substrate and the depth of the first center layer or the depth of the second center layer divided by the center thickness The absolute difference between can be within one or more of the ranges discussed above. In further embodiments, one of the first compression depth, the second compression depth, the third compression depth, or the fourth compression depth is divided by the thickness of the substrate and the first central compression depth or the second central compression depth divided by the central thickness The absolute difference between can be within one or more of the ranges discussed above. In further embodiments, the absolute difference between the first average potassium concentration or the second average potassium concentration and the central average potassium concentration may be within one or more of the ranges discussed above.

在步驟1509後,如在第50圖中展示,本揭露內容之方法可繼續進行至步驟1511,包含在第一主表面203上及/或在第一凹座234中安置一塗層251。在一些實施例中,如所展示,第二液體4703可安置於第一主表面203上。在另外實施例中,第二液體4703可安置於第一部分221之第一表面區223及第二部分231之第三表面區233上。在另外實施例中,第二液體4703可安置於第一中心表面區209上及/或填充第一凹座234。在另外實施例中,如所展示,可使用一容器4701(例如,管道、可撓性管、微量吸管或注射管)安置第二液體4703。在一些實施例中,第二液體4703可包含塗佈前驅物、溶劑、粒子、奈米粒子及/或纖維。在一些實施例中,塗佈前驅物可包含(不限於)單體、加速劑、固化劑、環氧樹脂及/或丙烯酸酯中之一或多者。在一些實施例中,用於黏著劑前驅物之溶劑可包含極性溶劑(例如,水、乙醇、醋酸酯、丙酮、甲酸、二甲基甲醯胺、乙腈、二甲基胺苯碸亞磺酸、硝基甲烷、丙烯碳酸酯、聚(醚醚酮))及/或非極性溶劑(例如,戊烷、1,4-二噁烷、氯仿、二氯甲烷、二乙醚、己烷、庚烷、苯、甲苯、二甲苯)。第二液體4703可經固化以形成一塗層251,如在第51圖中展示。固化第二液體4703可包含加熱第二液體4703,藉由紫外線(UV)輻射輻照第二液體4703,及/或等候預定時間量(例如,自約30分鐘至24小時、自約1小時至約8小時)。在一些實施例中,可使用另一方法(例如,化學氣相沉積(chemical vapor deposition;CVD)(例如,低壓CVD、電漿增強型CVD)、物理氣相沉積(physical vapor deposition,PVD)(例如,蒸鍍、分子束磊晶、離子鍍敷)、原子層沉積(atomic layer deposition,ALD)、濺鍍、噴霧熱解、化學浴沉積、溶膠-凝膠沉積)來形成該塗層251。在一些實施例中,雖未展示,但塗層251可安置於第一凹座234中(例如,填充第一凹座234),而不接觸第一主表面203(例如,第一表面區223、第三表面區233)。After step 1509 , as shown in FIG. 50 , the method of the present disclosure may proceed to step 1511 including disposing a coating 251 on the first major surface 203 and/or in the first recess 234 . In some embodiments, the second liquid 4703 may be disposed on the first major surface 203 as shown. In other embodiments, the second liquid 4703 may be disposed on the first surface region 223 of the first portion 221 and the third surface region 233 of the second portion 231 . In further embodiments, the second liquid 4703 may be disposed on the first central surface region 209 and/or fill the first recess 234 . In further embodiments, as shown, a container 4701 (eg, tubing, flexible tubing, micropipette, or syringe) may be used to accommodate the second liquid 4703. In some embodiments, the second liquid 4703 may include coating precursors, solvents, particles, nanoparticles, and/or fibers. In some embodiments, the coating precursor may include, without limitation, one or more of monomers, accelerators, curing agents, epoxy resins, and/or acrylates. In some embodiments, the solvent used for the adhesive precursor may comprise a polar solvent (eg, water, ethanol, acetate, acetone, formic acid, dimethylformamide, acetonitrile, dimethylamine phenylsulfinic acid) , nitromethane, propylene carbonate, poly(ether ether ketone)) and/or non-polar solvents (e.g., pentane, 1,4-dioxane, chloroform, dichloromethane, diethyl ether, hexane, heptane , benzene, toluene, xylene). The second liquid 4703 can be cured to form a coating 251, as shown in FIG. Curing the second liquid 4703 can include heating the second liquid 4703, irradiating the second liquid 4703 with ultraviolet (UV) radiation, and/or waiting a predetermined amount of time (eg, from about 30 minutes to 24 hours, from about 1 hour to about 8 hours). In some embodiments, another method (eg, chemical vapor deposition (CVD) (eg, low pressure CVD, plasma enhanced CVD), physical vapor deposition (PVD) ( For example, evaporation, molecular beam epitaxy, ion plating), atomic layer deposition (ALD), sputtering, spray pyrolysis, chemical bath deposition, sol-gel deposition) to form the coating 251 . In some embodiments, although not shown, coating 251 may be disposed in first recess 234 (eg, fill first recess 234 ) without contacting first major surface 203 (eg, first surface region 223 ) , the third surface area 233).

在步驟1509或1511後,如在第51圖中展示,本揭露內容之方法可繼續進行至步驟1513,包含在第二凹座244中安置材料。在一些實施例中,如所展示,第三液體4803可安置於第二凹座244中。在一些實施例中,第三液體4803可包含前驅物、溶劑、粒子、奈米粒子及/或纖維。在另外實施例中,如所展示,第三液體4803可自容器4801安置於第二凹座244中,但可使用其他方法在第二凹座中沉積第三液體或其他材料,如上關於第一凹座及/或第二液體所論述。在一些實施例中,第三液體4803可經固化(例如,加熱第三液體,輻照第三液體,等候指定時間量)以在第二凹座244中形成基於聚合物之部分241,如在第52圖中展示。在一些實施例中,雖未展示,但第三液體可經固化以形成安置於第二凹座244中之一黏著層,例如,類似於黏著層261。After step 1509 or 1511 , as shown in FIG. 51 , the method of the present disclosure may proceed to step 1513 , including placing material in the second recess 244 . In some embodiments, the third liquid 4803 can be seated in the second recess 244 as shown. In some embodiments, the third liquid 4803 may include precursors, solvents, particles, nanoparticles, and/or fibers. In further embodiments, as shown, the third liquid 4803 may be disposed in the second recess 244 from the container 4801, although other methods may be used to deposit the third liquid or other material in the second recess, as described above with respect to the first The dimples and/or the second liquid are discussed. In some embodiments, the third liquid 4803 can be cured (eg, heat the third liquid, irradiate the third liquid, wait a specified amount of time) to form the polymer-based portion 241 in the second recess 244, as in Shown in Figure 52. In some embodiments, although not shown, the third liquid may be cured to form an adhesive layer disposed in the second recess 244 , eg, similar to the adhesive layer 261 .

在步驟1511或1513後,本揭露內容之方法可繼續進行至步驟1515,包含使用可折疊基板206來組裝可折疊設備。如在第52圖中展示,步驟1515可包含塗覆黏著層261以使第二主表面205之第二表面區225與第二主表面205之第四表面區235接觸。舉例而言,在一些實施例中,黏著層261可包含黏著劑材料之一或多個薄片。在一些實施例中,可存在包含安置於第二凹座(例如,基於聚合物之部分241)中之黏著層261及/或材料之一或多個薄片之間的整體界面,此可減少(例如,避免)當光在該等薄片之間行進時之光學繞射及/或光學不連續性,此係由於在一些實施例中,一或多個薄片可包括實質上相同之折射率。在一些實施例中,雖未展示,但黏著層之至少一部分可安置於第二凹座中。在一些實施例中,一離型襯裡(例如,見第2圖及第4圖中之離型襯裡271)或一顯示裝置(例如,見第3圖及第5圖中之顯示裝置307)可安置於黏著層261(例如,第一接觸表面263)上。在步驟1515,根據製作可折疊設備的第15圖中之流程圖的本揭露內容之方法可在步驟1519處完成。After step 1511 or 1513, the method of the present disclosure may proceed to step 1515, including using the foldable substrate 206 to assemble a foldable device. As shown in FIG. 52 , step 1515 may include applying an adhesive layer 261 to bring the second surface region 225 of the second major surface 205 into contact with the fourth surface region 235 of the second major surface 205 . For example, in some embodiments, the adhesive layer 261 may comprise one or more sheets of adhesive material. In some embodiments, there may be an integral interface between one or more sheets comprising the adhesive layer 261 and/or material disposed in the second recess (eg, the polymer-based portion 241 ), which may reduce ( For example, avoid) optical diffraction and/or optical discontinuities as light travels between the flakes, since in some embodiments one or more flakes may comprise substantially the same refractive index. In some embodiments, although not shown, at least a portion of the adhesive layer may be disposed in the second recess. In some embodiments, a release liner (eg, see release liner 271 in Figures 2 and 4) or a display device (eg, see display device 307 in Figures 3 and 5) can be Disposed on the adhesive layer 261 (eg, the first contact surface 263 ). At step 1515 , the method of the present disclosure according to the flowchart in FIG. 15 of making a foldable device may be completed at step 1519 .

在一些實施例中,根據本揭露內容之實施例的製作一可折疊設備之方法可沿著第15圖中之流程圖之步驟1501、1503、1505、1507、1509、1511、1513、1515及1519依序進行,如上所論述。在一些實施例中,如在第15圖中展示,箭頭1502可跟在步驟1501後,省略步驟1503,例如,當一或多個凹座待藉由機械加工可折疊基板(例如,不是化學強化可折疊基板來形成該(等)凹座)而形成於可折疊基板206中時。在一些實施例中,箭頭1506可跟在步驟1501後,至包含化學強化可折疊基板之步驟1509,例如,若在步驟1501之結尾,可折疊設備包含凹座。在一些實施例中,箭頭1508可跟在步驟1509後,至包含在第二凹座中安置材料之步驟1513。在另外實施例中,方法可沿著自步驟1513至步驟1511之箭頭1512,包含在第一主表面上及/或在第一凹座234中安置一塗層251。在另外實施例中,方法可沿著自步驟1513至步驟1519之箭頭1518,例如,若可折疊設備在步驟1513之結尾充分組裝,或若另一材料待安置於第一凹座中、第一主表面上及/或第二主表面上。在一些實施例中,方法可沿著自步驟1509至步驟1519之箭頭1510,例如,若可折疊基板206係所要的產品(例如,在第一凹座或第二凹座中無材料)。以上選項中之任何者可經組合以製作根據本揭露內容之實施例的可折疊設備。In some embodiments, a method of making a foldable device according to embodiments of the present disclosure may follow steps 1501 , 1503 , 1505 , 1507 , 1509 , 1511 , 1513 , 1515 and 1519 of the flowchart in FIG. 15 This is done sequentially, as discussed above. In some embodiments, as shown in FIG. 15, arrow 1502 may follow step 1501 and step 1503 may be omitted, eg, when one or more pockets are to be folded by machining the foldable substrate (eg, not chemically strengthened) The recess(s) are formed in the foldable substrate 206 by folding the substrate to form the recess(s). In some embodiments, arrow 1506 may follow step 1501 to step 1509 of including a chemically strengthened foldable substrate, eg, if at the end of step 1501, the foldable device includes a recess. In some embodiments, arrow 1508 may follow step 1509 to step 1513 which includes placing material in the second recess. In further embodiments, the method may include disposing a coating 251 on the first major surface and/or in the first recess 234 along arrow 1512 from step 1513 to step 1511 . In further embodiments, the method may follow arrow 1518 from step 1513 to step 1519, eg, if the foldable device is fully assembled at the end of step 1513, or if another material is to be placed in the first recess, the first on the major surface and/or on the second major surface. In some embodiments, the method may follow arrow 1510 from step 1509 to step 1519, eg, if the foldable substrate 206 is the desired product (eg, no material in the first pocket or the second pocket). Any of the above options can be combined to make a foldable device according to embodiments of the present disclosure.

現將參看第25圖至第34圖及第47圖至第49圖及第16圖中之流程圖來論述製作在第4圖至第5圖、第7圖及第12圖中圖示之可折疊設備401、501及/或1201及/或可折疊基板407之實例實施例。在本揭露內容之方法之第一步驟1601中,方法可開始於提供一可折疊基板407及/或可折疊基板2505(見第25圖至第27圖)。在一些實施例中,可藉由購買或以其他方式獲得基板或藉由形成可折疊基板來提供可折疊基板407及/或可折疊基板2505。在一些實施例中,可折疊基板407及/或可折疊基板2505可包含一基於玻璃之基板及/或一基於陶瓷之基板。在另外實施例中,基於玻璃之基板及/或基於陶瓷之基板可藉由以多種條帶形成製程(例如,槽拉、下拉、熔融下拉、上拉、壓滾、重拉或浮動)來形成其而提供。在另外實施例中,可藉由加熱基於玻璃之基板以使一或多個陶瓷晶體結晶來提供基於陶瓷之基板。可折疊基板407及/或可折疊基板2505可包含可沿著一平面延伸之一第二主表面405(見第27圖)。第二主表面405可與第一主表面403相對。25 to 34 and 47 to 49 and the flow charts in 16 will now be discussed to discuss the possibility of making those illustrated in Figures 4 to 5, 7 and 12. Example embodiments of folding apparatuses 401 , 501 and/or 1201 and/or foldable substrate 407 . In a first step 1601 of the method of the present disclosure, the method may begin by providing a foldable substrate 407 and/or foldable substrate 2505 (see FIGS. 25-27). In some embodiments, foldable substrate 407 and/or foldable substrate 2505 may be provided by purchasing or otherwise obtaining the substrates or by forming foldable substrates. In some embodiments, foldable substrate 407 and/or foldable substrate 2505 may comprise a glass-based substrate and/or a ceramic-based substrate. In further embodiments, glass-based substrates and/or ceramic-based substrates may be formed by various strip-forming processes (eg, slot draw, draw down, fusion draw, pull up, roll, redraw, or float) it is provided. In further embodiments, the ceramic-based substrate may be provided by heating the glass-based substrate to crystallize one or more ceramic crystals. Foldable substrate 407 and/or foldable substrate 2505 may include a second major surface 405 (see FIG. 27 ) that may extend along a plane. The second major surface 405 may be opposite to the first major surface 403 .

在一些實施例中,在步驟1601中,可折疊基板407可具備在可折疊基板407及/或可折疊基板2505之第一主表面403中之一第一凹座434,其暴露在中心部分481中的可折疊基板407及/或可折疊基板2505之第一中心表面區409。在一些實施例中,在步驟1601中,可折疊基板407可具備在可折疊基板407及/或可折疊基板2505之第二主表面405中之一第二凹座444,其暴露在中心部分481中的可折疊基板407及/或可折疊基板2505之第二中心表面區419。在另外實施例中,雖未展示,但第一中心表面區409及/或第二中心表面區419可包含一過渡區域(例如,類似於過渡區域853及/或855)。在另外實施例中,該(等)凹座(例如,第一凹座434、第二凹座444)可藉由蝕刻、雷射燒蝕或機械加工第一主表面403及/或第二主表面405來形成。舉例而言,機械加工可折疊基板407及/或可折疊基板2505可類似於以下論述之步驟1603。在一些實施例中,在步驟1601中,可折疊基板407可具備一或多個初始壓縮應力區域,例如,具有以下參考步驟1605論述的性質中之一或多者。In some embodiments, in step 1601 , foldable substrate 407 may be provided with a first recess 434 in foldable substrate 407 and/or first major surface 403 of foldable substrate 2505 exposed at central portion 481 The first central surface area 409 of the foldable substrate 407 and/or the foldable substrate 2505 in . In some embodiments, in step 1601 , foldable substrate 407 may be provided with a second recess 444 in foldable substrate 407 and/or second major surface 405 of foldable substrate 2505 exposed at central portion 481 The second central surface area 419 of the foldable substrate 407 and/or the foldable substrate 2505 in . In further embodiments, although not shown, the first central surface region 409 and/or the second central surface region 419 may include a transition region (eg, similar to transition regions 853 and/or 855). In further embodiments, the recess(s) (eg, first recess 434, second recess 444) may be processed by etching, laser ablation, or machining of first major surface 403 and/or second major surface surface 405 is formed. For example, machining foldable substrate 407 and/or foldable substrate 2505 may be similar to step 1603 discussed below. In some embodiments, in step 1601 , the foldable substrate 407 may be provided with one or more regions of initial compressive stress, eg, having one or more of the properties discussed below with reference to step 1605 .

在步驟1601後,在一些實施例中,方法可繼續進行至步驟1603,包含形成第一凹座434及/或第二凹座444。在一些實施例中,該(等)凹座可藉由機械加工可折疊基板407及/或可折疊基板2505之第一主表面403及/或第二主表面405來形成。第一凹座434可形成於可折疊基板407及/或可折疊基板2505之第一主表面403中,其暴露中心部分481之第一中心表面區409。第二凹座444可形成於可折疊基板407及/或可折疊基板2505之第二主表面405中,其暴露中心部分481之第二中心表面區419。舉例而言,第一主表面403及/或第二主表面405可藉由金剛石雕刻來機械加工,以在基於玻璃之基板及/或基於陶瓷之基板中產生非常精密之圖案。如在第26圖中展示,可使用金剛石雕刻來在可折疊基板407及/或可折疊基板2505之第一主表面403中產生第一凹座434,其中可使用電腦數值控制(computer numerical control;CNC)機器2003來控制金剛石尖探針2001。可將不同於金剛石之材料用於藉由CNC機器雕刻。在一些實施例中,雖未展示,但可使用類似製程來形成可與第一凹座434相對之第二凹座444。應理解,可使用形成該(等)凹座之其他方法,例如,微影及雷射燒蝕。在步驟1603後,在一些實施例中,可折疊基板2505可包含包含第一凹座434及/或第二凹座444之可折疊基板407。After step 1601 , in some embodiments, the method may proceed to step 1603 , including forming the first recess 434 and/or the second recess 444 . In some embodiments, the recess(s) may be formed by machining the first major surface 403 and/or the second major surface 405 of the foldable substrate 407 and/or the foldable substrate 2505. A first recess 434 may be formed in the first major surface 403 of the foldable substrate 407 and/or the foldable substrate 2505 that exposes the first central surface region 409 of the central portion 481 . A second recess 444 may be formed in the second major surface 405 of the foldable substrate 407 and/or the foldable substrate 2505 that exposes the second central surface region 419 of the central portion 481 . For example, the first major surface 403 and/or the second major surface 405 can be machined by diamond engraving to create very precise patterns in glass-based substrates and/or ceramic-based substrates. As shown in Figure 26, diamond engraving can be used to create first recesses 434 in the first major surface 403 of the foldable substrate 407 and/or the foldable substrate 2505, where computer numerical control can be used; CNC) machine 2003 to control the diamond tip probe 2001. Materials other than diamond can be used for engraving by CNC machines. In some embodiments, although not shown, a similar process may be used to form the second recess 444 , which may be opposite the first recess 434 . It should be understood that other methods of forming the recess(s) may be used, such as lithography and laser ablation. After step 1603 , in some embodiments, the foldable substrate 2505 can include the foldable substrate 407 including the first recess 434 and/or the second recess 444 .

在一些實施例中,步驟1603可包含一蝕刻製程以形成第一凹座及/或第二凹座(例如,遮蔽、蝕刻及移除遮罩,類似於以上論述之步驟1503、1505及1507)。在另外實施例中,如在第27圖中展示,步驟1603可包含在可折疊基板407及/或可折疊基板2505之一或多個部分上安置一遮罩。在另外實施例中,如所展示,步驟1603可包含在可折疊基板407及/或可折疊基板2505之一或多個部分上安置第一液體2107。在另外實施例中,如以上參考步驟1503展示及論述,可使用一容器2101在可折疊基板407及/或可折疊基板2505之一或多個部分上安置第一液體2107。在另外實施例中,如所展示,第一液體2107可安置於第一表面區423上,作為第一液體沉積物2103,及安置於第三表面區433上,作為第二液體沉積物2105。雖未展示,但應理解,類似液體沉積物可形成於第二表面區及/或第四表面區上。在另外實施例中,液體沉積物(例如,第27圖中展示之第一液體沉積物2103及第二液體沉積物2105)可經固化以形成遮罩(例如,第28圖中展示之第一遮罩2205及第三遮罩2209)。固化第一液體可包含加熱第一液體2107,藉由紫外線(UV)輻射輻照第一液體2107,及/或等候預定時間量。在另外實施例中,可使用如上論述之另一方法來形成遮罩(例如,遮罩2205、2207、2209及2211)。如在第28圖中展示,第一遮罩2205可安置於第一表面區423上,第二遮罩2207可安置於第二表面區425,第三遮罩2209可安置於第三表面區433上,及/或第四遮罩2211可安置於第四表面區435上。在另外實施例中,如在第28圖中展示,步驟1603可進一步包含蝕刻可折疊基板407及/或可折疊基板2505。在另外實施例中,如所展示,蝕刻可包含將可折疊基板407及/或可折疊基板2505曝露於一蝕刻劑2203(例如,一或多種無機酸)。在另外實施例中,如所展示,蝕刻劑2203可為蝕刻劑浴2201中含有之液體蝕刻劑。在另外實施例中,如所展示,蝕刻可包含蝕刻第一主表面403之中心部分481以形成一第一中心表面區409。在另外實施例中,如所展示,蝕刻可在第一平面404a與第一中心表面區409之間形成第一凹座434。在更另外實施例中,第一凹座434可自第一平面404a及/或第一主表面403凹進去第一距離417。在另外實施例中,如所展示,蝕刻可包含蝕刻第二主表面405之中心部分481以形成一第二中心表面區419。在另外實施例中,如所展示,蝕刻可在第二平面404b與第二中心表面區419之間形成第二凹座444。在更另外實施例中,第二凹座444可自第二平面404b及/或第二主表面405凹進去第二距離437。在更另外實施例中,步驟1603可進一步包含移除該(等)遮罩。在一些實施例中,如在第29圖中展示,移除該(等)遮罩(例如,遮罩2205、2207、2209及2211)可包含在跨表面(例如,第三表面區433)之一方向2302上移動研磨工具2301。在更另外實施例中,使用該工具可包含掃掠、刮擦、研磨、推動等。在另外實施例中,該(等)遮罩(例如,遮罩2205、2207、2209及2211)可藉由用溶劑洗滌表面(例如,第一表面區423、第二表面區425、第三表面區433、第四表面區435)來移除。在一些實施例中,移除該(等)遮罩可包含分別自第一表面區423、第二表面區425、第三表面區433、第四表面區435移除遮罩2205、2207、2209及2211。在步驟1603後,在一些實施例中,可折疊基板2505可包含包含第一凹座434及/或第二凹座444之可折疊基板407。In some embodiments, step 1603 may include an etching process to form the first recess and/or the second recess (eg, masking, etching, and removing the mask, similar to steps 1503, 1505, and 1507 discussed above) . In further embodiments, as shown in FIG. 27, step 1603 may include disposing a mask on one or more portions of foldable substrate 407 and/or foldable substrate 2505. In further embodiments, step 1603 may include disposing a first liquid 2107 on one or more portions of foldable substrate 407 and/or foldable substrate 2505, as shown. In further embodiments, as shown and discussed above with reference to step 1503, a container 2101 may be used to place the first liquid 2107 on the foldable substrate 407 and/or one or more portions of the foldable substrate 2505. In further embodiments, as shown, the first liquid 2107 may be disposed on the first surface region 423 as the first liquid deposit 2103 and on the third surface region 433 as the second liquid deposit 2105. Although not shown, it should be understood that similar liquid deposits may be formed on the second surface region and/or the fourth surface region. In further embodiments, the liquid deposits (eg, the first liquid deposit 2103 and the second liquid deposit 2105 shown in FIG. 27 ) can be cured to form a mask (eg, the first liquid deposit shown in FIG. 28 ) mask 2205 and third mask 2209). Curing the first liquid may include heating the first liquid 2107, irradiating the first liquid 2107 with ultraviolet (UV) radiation, and/or waiting a predetermined amount of time. In further embodiments, the masks (eg, masks 2205, 2207, 2209, and 2211) may be formed using another method as discussed above. As shown in FIG. 28, the first mask 2205 may be disposed on the first surface area 423, the second mask 2207 may be disposed on the second surface area 425, and the third mask 2209 may be disposed on the third surface area 433 and/or the fourth mask 2211 may be disposed on the fourth surface area 435 . In further embodiments, as shown in FIG. 28, step 1603 may further include etching foldable substrate 407 and/or foldable substrate 2505. In further embodiments, as shown, etching may include exposing foldable substrate 407 and/or foldable substrate 2505 to an etchant 2203 (eg, one or more inorganic acids). In further embodiments, as shown, the etchant 2203 may be a liquid etchant contained in the etchant bath 2201 . In further embodiments, as shown, the etching may include etching the central portion 481 of the first major surface 403 to form a first central surface region 409 . In further embodiments, the etching may form a first recess 434 between the first plane 404a and the first central surface region 409, as shown. In still other embodiments, the first recess 434 may be recessed a first distance 417 from the first plane 404a and/or the first major surface 403 . In further embodiments, as shown, the etching may include etching the central portion 481 of the second major surface 405 to form a second central surface region 419 . In further embodiments, the etching may form a second recess 444 between the second plane 404b and the second central surface region 419, as shown. In still other embodiments, the second recess 444 may be recessed a second distance 437 from the second plane 404b and/or the second major surface 405 . In still further embodiments, step 1603 may further include removing the mask(s). In some embodiments, as shown in FIG. 29, removing the mask(s) (eg, masks 2205, 2207, 2209, and 2211) may be included in a spanning surface (eg, third surface region 433) Move the grinding tool 2301 in a direction 2302. In still further embodiments, using the tool may include sweeping, scraping, grinding, pushing, and the like. In further embodiments, the mask(s) (eg, masks 2205, 2207, 2209, and 2211) may be prepared by washing the surfaces (eg, first surface region 423, second surface region 425, third surface) with a solvent area 433, fourth surface area 435) to remove. In some embodiments, removing the mask(s) may include removing the masks 2205, 2207, 2209 from the first surface region 423, the second surface region 425, the third surface region 433, the fourth surface region 435, respectively and 2211. After step 1603 , in some embodiments, the foldable substrate 2505 may include the foldable substrate 407 including the first recess 434 and/or the second recess 444 .

此外或替代地,步驟1601及/或1603可包含藉由自可折疊基板407及/或可折疊基板2505之第二主表面205移除子層以暴露可包含在第4圖至第5圖及第7圖中圖示之第二主表面405的一新第二主表面(例如,藉由機械加工、藉由蝕刻、藉由微影、藉由燒蝕)來減小可折疊基板407及/或可折疊基板2505之厚度。如上所論述,自第一主表面及第二主表面兩者移除子層可移除可折疊基板407及/或可折疊基板2505之外子層,該等外子層可具有與可折疊基板407及/或可折疊基板2505之對應層之下伏內部部分不一致的光學性質,例如,具有更一致之光學性質以提供跨全部可折疊基板407及/或可折疊基板2505407及/或可折疊基板2505具有極少或無失真之一致光學效能,從而移除在該(等)遮罩之形成期間產生的表面瑕疵。Additionally or alternatively, steps 1601 and/or 1603 may include exposing the sub-layer by removing the sub-layer from the second major surface 205 of the foldable substrate 407 and/or the foldable substrate 2505 which may be included in FIGS. 4-5 and A new second major surface of second major surface 405 illustrated in Figure 7 (eg, by machining, by etching, by lithography, by ablation) to reduce foldable substrate 407 and/or Or the thickness of the foldable substrate 2505. As discussed above, removing sub-layers from both the first and second major surfaces can remove the outer sub-layers of foldable substrate 407 and/or foldable substrate 2505, which outer sub-layers may have the same 407 and/or the corresponding layers of foldable substrate 2505 with inconsistent optical properties of underlying interior portions, eg, having more consistent optical properties to provide across all foldable substrates 407 and/or foldable substrates 2505 407 and/or foldable substrates The 2505 has consistent optical performance with little or no distortion, thereby removing surface imperfections created during the formation of the mask(s).

在步驟1601或1603後,如在第25圖及第30圖中展示,方法可繼續進行至步驟1605,包含化學強化可折疊基板407。在一些實施例中,如所展示,化學強化可折疊基板407可包含使包含鋰陽離子及/或鈉陽離子的可折疊基板407之至少一部分與包含鹽溶液2403之一鹽浴2401接觸,該鹽溶液可包含以上關於步驟1509針對鹽溶液2403論述的組分中之一或多者。在一些實施例中,鹽溶液2403之溫度及/或可折疊基板407可接觸鹽溶液2403之時間可在以上參考步驟1509論述的範圍中之一或多者內。在一些實施例中,步驟1605中之化學強化可折疊基板407可包含化學強化第一中心表面區409以形成自第一中心表面區409延伸至初始第一中心壓縮深度之一初始第一中心壓縮應力區域,化學強化第一表面區423以形成自第一表面區423延伸至初始第一壓縮深度之一初始第一壓縮應力區域,化學強化第三表面區433以形成自第三表面區433延伸至初始第三壓縮深度之一初始第三壓縮深度,化學強化第二表面區425以形成自第二表面區425延伸至初始第二壓縮深度之一初始第二壓縮深度,化學強化第四表面區435以形成自第四表面區435延伸至初始第四壓縮深度之一初始第四壓縮應力區域,及化學強化第二中心表面區419以形成自第二中心表面區419延伸至初始第二中心壓縮深度之一初始第二中心壓縮深度。After step 1601 or 1603 , as shown in FIGS. 25 and 30 , the method may continue to step 1605 including chemically strengthening the foldable substrate 407 . In some embodiments, as shown, chemically strengthening the foldable substrate 407 can include contacting at least a portion of the foldable substrate 407 comprising lithium cations and/or sodium cations with a salt bath 2401 comprising a salt solution 2403, the salt solution One or more of the components discussed above with respect to step 1509 for saline solution 2403 may be included. In some embodiments, the temperature of the salt solution 2403 and/or the time for which the foldable substrate 407 can contact the salt solution 2403 may be within one or more of the ranges discussed above with reference to step 1509 . In some embodiments, chemically strengthened foldable substrate 407 in step 1605 may include chemically strengthened first central surface region 409 to form an initial first central compression extending from first central surface region 409 to an initial first central compression depth Stressed region, chemically strengthened first surface region 423 to form an initial first compressive stress region extending from first surface region 423 to an initial first compression depth, chemically strengthened third surface region 433 to form extending from third surface region 433 to an initial third depth of compression to an initial third depth of compression, chemically strengthening the second surface region 425 to form an initial second depth of compression extending from the second surface region 425 to an initial second depth of compression, chemically strengthening the fourth surface region 435 to form an initial fourth compressive stress region extending from the fourth surface region 435 to an initial fourth depth of compression, and chemically strengthening the second central surface region 419 to form an initial second central compression extending from the second central surface region 419 One of the depths The initial second center compression depth.

在步驟1601或1605後,可折疊基板206可包含一或多個初始壓縮應力區域(例如,第一、第二、第三、第四、第一中心及/或第二中心壓縮應力區域),其包含一初始壓縮深度及/或一相關聯之初始層深度。在一些實施例中,作為基板厚度411之一百分比的初始第一壓縮深度、初始第二壓縮深度、初始第三壓縮深度及/或初始第四壓縮深度可為約5%或更大、10%或更大、約12%或更大、約14%或更大、約25%或更小、約20%或更小、約18%或更小或約16%或更小。在一些實施例中,作為基板厚度411之一百分比的初始第一壓縮深度、初始第二壓縮深度、初始第三壓縮深度及/或初始第四壓縮深度可在自約5%至約25%、自約8%至約25%、自約8%至約20%、自約10%至約20%、自約10%至約18%、自約12%至約18%、自約12%至約16%、自約14%至約16%之一範圍或其間之任一範圍或子範圍中。在一些實施例中,作為完工的可折疊基板407之對應的壓縮深度之一百分比的初始第一壓縮深度、初始第二壓縮深度、初始第三壓縮深度及/或初始第四壓縮深度可為約50%或更大、60%或更大、約65%或更大、約68%或更大、約80%或更小、約75%或更小、或約72%或更小、或約70%或更小。在一些實施例中,作為完工的可折疊基板407之對應的壓縮深度之一百分比的初始第一壓縮深度、初始第二壓縮深度、初始第三壓縮深度及/或初始第四壓縮深度可在自約50%至約80%、自約60%至約80%、自約60%至約75%、自約65%至約75%、自約65%至約72%、自約68%至約72%、自約68%至約70%之一範圍或其間之任一範圍或子範圍中。在一些實施例中,作為基板厚度411之一百分比的初始第一層深度、初始第二層深度、初始第三層深度及/或初始第四層深度可為約5%或更大、10%或更大、約12%或更大、約14%或更大、約25%或更小、約20%或更小、約18%或更小或約16%或更小。在一些實施例中,作為基板厚度411之一百分比的初始第一層深度、初始第二層深度、初始第三層深度及/或初始第四層深度可在自約5%至約25%、自約8%至約25%、自約8%至約20%、自約10%至約20%、自約10%至約18%、自約12%至約18%、自約12%至約16%、自約14%至約16%之一範圍或其間之任一範圍或子範圍中。在一些實施例中,作為完工的可折疊基板407之對應的層深度之一百分比的初始第一層深度、初始第二層深度、初始第三層深度及/或初始第四層深度可為約50%或更大、60%或更大、約65%或更大、約68%或更大、約80%或更小、約75%或更小、或約72%或更小、或約70%或更小。在一些實施例中,作為完工的可折疊基板407之對應的壓縮深度之一百分比的初始第一層深度、初始第二層深度、初始第三層深度及/或初始第四層深度可在自約50%至約80%、自約60%至約80%、自約60%至約75%、自約65%至約75%、自約65%至約72%、自約68%至約72%、自約68%至約70%之一範圍或其間之任一範圍或子範圍中。After step 1601 or 1605, the foldable substrate 206 may include one or more initial compressive stress regions (eg, first, second, third, fourth, first central, and/or second central compressive stress regions), It includes an initial compression depth and/or an associated initial layer depth. In some embodiments, the initial first depth of compression, the initial second depth of compression, the initial third depth of compression, and/or the initial fourth depth of compression as a percentage of substrate thickness 411 may be about 5% or more, 10% or greater, about 12% or greater, about 14% or greater, about 25% or less, about 20% or less, about 18% or less, or about 16% or less. In some embodiments, the initial first depth of compression, the initial second depth of compression, the initial third depth of compression, and/or the initial fourth depth of compression as a percentage of substrate thickness 411 may be from about 5% to about 25%, from about 8% to about 25%, from about 8% to about 20%, from about 10% to about 20%, from about 10% to about 18%, from about 12% to about 18%, from about 12% to In a range of about 16%, from about 14% to about 16%, or any range or subrange therebetween. In some embodiments, the initial first compression depth, the initial second compression depth, the initial third compression depth, and/or the initial fourth compression depth as a percentage of the corresponding compression depth of the finished foldable substrate 407 may be about 50% or more, 60% or more, about 65% or more, about 68% or more, about 80% or less, about 75% or less, or about 72% or less, or about 70% or less. In some embodiments, the initial first compression depth, the initial second compression depth, the initial third compression depth, and/or the initial fourth compression depth as a percentage of the corresponding compression depth of the finished foldable substrate 407 may be from about 50% to about 80%, from about 60% to about 80%, from about 60% to about 75%, from about 65% to about 75%, from about 65% to about 72%, from about 68% to about 72%, a range from about 68% to about 70%, or any range or subrange therebetween. In some embodiments, the initial first layer depth, initial second layer depth, initial third layer depth, and/or initial fourth layer depth as a percentage of substrate thickness 411 may be about 5% or greater, 10% or greater, about 12% or greater, about 14% or greater, about 25% or less, about 20% or less, about 18% or less, or about 16% or less. In some embodiments, the initial first layer depth, initial second layer depth, initial third layer depth, and/or initial fourth layer depth as a percentage of substrate thickness 411 may be from about 5% to about 25%, from about 8% to about 25%, from about 8% to about 20%, from about 10% to about 20%, from about 10% to about 18%, from about 12% to about 18%, from about 12% to In a range of about 16%, from about 14% to about 16%, or any range or subrange therebetween. In some embodiments, the initial first layer depth, initial second layer depth, initial third layer depth, and/or initial fourth layer depth as a percentage of the corresponding layer depths of the finished foldable substrate 407 may be about 50% or more, 60% or more, about 65% or more, about 68% or more, about 80% or less, about 75% or less, or about 72% or less, or about 70% or less. In some embodiments, the initial first layer depth, initial second layer depth, initial third layer depth, and/or initial fourth layer depth as a percentage of the corresponding compression depth of the finished foldable substrate 407 may be about 50% to about 80%, from about 60% to about 80%, from about 60% to about 75%, from about 65% to about 75%, from about 65% to about 72%, from about 68% to about 72%, a range from about 68% to about 70%, or any range or subrange therebetween.

在步驟1605後,雖未展示,但方法可繼續進行至步驟1607,包含蝕刻可折疊基板以自現有第一中心表面區及/或現有第二中心表面區移除子層。在一些實施例中,如上參考步驟1503、1505及1507所論述或如下參考步驟1707、1709及1711所論述,步驟1605可包含在將可折疊基板407(例如,現有第一中心表面區及/或現有第二中心表面區)曝露於蝕刻劑(例如,蝕刻劑2203)前,在第一表面區423、第二表面區425、第三表面區433及/或第四表面區435上安置遮罩,其後可移除該(等)遮罩。在另外實施例中,自中心部分481(例如,第一中心表面區、第二中心表面區)移除之深度可實質上等於對應的壓縮應力區域自對應表面延伸之對應層深度及/或壓縮深度。在另外實施例中,自中心部分481(例如,第一中心表面區、第二中心表面區)移除之深度可大於對應的壓縮應力區域自對應表面延伸之對應層深度及/或壓縮深度。在另外實施例中,自中心部分481(例如,第一中心表面區、第二中心表面區)移除之深度可小於對應的壓縮應力區域自對應表面延伸之對應層深度及/或壓縮深度。After step 1605, although not shown, the method may continue to step 1607, including etching the foldable substrate to remove the sub-layers from the existing first central surface region and/or the existing second central surface region. In some embodiments, as discussed above with reference to steps 1503, 1505, and 1507 or discussed below with reference to steps 1707, 1709, and 1711, step 1605 may include placing the foldable substrate 407 (eg, the existing first central surface region and/or A mask is placed over the first surface region 423, the second surface region 425, the third surface region 433, and/or the fourth surface region 435 prior to exposure to an etchant (eg, etchant 2203) , after which the mask(s) can be removed. In further embodiments, the depth removed from the central portion 481 (eg, the first central surface region, the second central surface region) may be substantially equal to the corresponding layer depth and/or compression of the corresponding compressive stress region extending from the corresponding surface depth. In further embodiments, the depth of removal from the central portion 481 (eg, first central surface region, second central surface region) may be greater than the corresponding layer depth and/or compressive depth at which the corresponding compressive stress region extends from the corresponding surface. In further embodiments, the depth removed from the central portion 481 (eg, first central surface region, second central surface region) may be less than the corresponding layer depth and/or compressive depth at which the corresponding compressive stress region extends from the corresponding surface.

在步驟1601、1603、1605或1607後,如在第31圖中展示,方法可繼續進行至步驟1609,包含將包含鹼金屬離子之膏狀物塗覆至第一部分421及第二部分431。在一些實施例中,如所展示,步驟1609可包含將來自一來源3101之第一鹽膏狀物3103安置於第一部分421上,及將第一鹽膏狀物3105安置於第二部分431上。在另外實施例中,如所展示,第一鹽膏狀物3103可塗覆至第一部分421之第一表面區423,且第一鹽膏狀物3105可塗覆至第二部分431之第三表面區433。在另外實施例中,雖未展示,但第一鹽膏狀物(例如,第一鹽膏狀物3103及/或3105)可塗覆至第一部分421之第二表面區425及第二部分231之第四表面區435。在一些實施例中,來源3101可包含管道(例如,可撓性管、微量吸管或注射管)、噴嘴或器皿(例如,燒杯)。第一鹽膏狀物3103可安置於第一部分421及第二部分431上,可經固化以形成第一鹽沉積物3205、3207、3209及/或3211,如在第32圖至第33圖中展示。After steps 1601 , 1603 , 1605 or 1607 , as shown in FIG. 31 , the method may continue to step 1609 including applying a paste comprising alkali metal ions to the first portion 421 and the second portion 431 . In some embodiments, as shown, step 1609 may include placing a first salt paste 3103 from a source 3101 on the first portion 421 and placing the first salt paste 3105 on the second portion 431 . In further embodiments, as shown, the first salt paste 3103 may be applied to the first surface region 423 of the first portion 421 and the first salt paste 3105 may be applied to the third portion of the second portion 431 Surface area 433. In further embodiments, although not shown, a first salt paste (eg, first salt paste 3103 and/or 3105 ) may be applied to the second surface region 425 of the first portion 421 and the second portion 231 the fourth surface area 435. In some embodiments, the source 3101 may include tubing (eg, flexible tubing, micropipettes, or syringes), nozzles, or vessels (eg, beakers). The first salt paste 3103 can be disposed on the first portion 421 and the second portion 431 and can be cured to form the first salt deposits 3205, 3207, 3209 and/or 3211, as in FIGS. 32-33 exhibit.

如本文中使用,鹽膏狀物含有鉀及/或鈉。在一些實施例中,第一鹽膏狀物3103及3105可包含硝酸鉀、磷酸鉀、氯化鉀、硫酸鉀、氯化鈉、硫酸鈉、硝酸鈉及/或磷酸鈉中之一或多者。在另外實施例中,第一鹽膏狀物可包含硝酸鉀及磷酸鉀。在另外實施例中,第一鹽膏狀物可實質上無鹼土金屬(例如,鹼土金屬離子、含鹼土金屬之化合物)。如本文中使用,鹼土金屬包括鈹、鎂、鈣、鍶、鋇及鐳。在另外實施例中,第一鹽膏狀物可含有約1,000 ppm或更大、約5,000 ppm或更大、約10,000 ppm或更大、約25,000 ppm或更大、約500,000 ppm或更小、約200,000 ppm或更小、約100,000 ppm或更小或約50,000 ppm或更小之以氧化物為基礎的鉀及/或鈉濃度。在另外實施例中,第一鹽膏狀物可含有在自約1,000 ppm至約500,000 ppm、自約5,000 ppm至約500,000 ppm、自約5,000 ppm至約200,000 ppm、自約10,000 ppm至約200,000 ppm、自約10,000 ppm至約100,000 ppm、自約25,000 ppm至約100,000 ppm、自約25,000 ppm至約50,000 ppm之一範圍或其間之任一範圍或子範圍中之以氧化物為基礎的鉀及/或鈉濃度。As used herein, a salt paste contains potassium and/or sodium. In some embodiments, the first salt pastes 3103 and 3105 may include one or more of potassium nitrate, potassium phosphate, potassium chloride, potassium sulfate, sodium chloride, sodium sulfate, sodium nitrate, and/or sodium phosphate . In further embodiments, the first salt paste may comprise potassium nitrate and potassium phosphate. In further embodiments, the first salt paste may be substantially free of alkaline earth metals (eg, alkaline earth metal ions, alkaline earth metal-containing compounds). As used herein, alkaline earth metals include beryllium, magnesium, calcium, strontium, barium, and radium. In further embodiments, the first salt paste can contain about 1,000 ppm or more, about 5,000 ppm or more, about 10,000 ppm or more, about 25,000 ppm or more, about 500,000 ppm or less, about An oxide-based potassium and/or sodium concentration of 200,000 ppm or less, about 100,000 ppm or less, or about 50,000 ppm or less. In further embodiments, the first salt paste may contain from about 1,000 ppm to about 500,000 ppm, from about 5,000 ppm to about 500,000 ppm, from about 5,000 ppm to about 200,000 ppm, from about 10,000 ppm to about 200,000 ppm , from about 10,000 ppm to about 100,000 ppm, from about 25,000 ppm to about 100,000 ppm, from about 25,000 ppm to about 50,000 ppm, or any range or sub-range therebetween, oxide-based potassium and/or or sodium concentration.

在一些實施例中,第一鹽膏狀物3103及3105可包含有機黏合劑或溶劑。有機黏合劑可包含纖維素、纖維素衍生物、疏水性改質氧化乙烯胺甲酸乙酯改質劑(HUER)及乙烯丙烯酸。纖維素衍生物之實例包含乙基纖維素、甲基纖維素及AQUAZOL(聚2乙基-2噁嗪)。溶劑可包含極性溶劑(例如,水、乙醇、醋酸酯、丙酮、甲酸、二甲基甲醯胺、乙腈、二甲基胺苯碸亞磺酸、硝基甲烷、丙烯碳酸酯、聚(醚醚酮))及/或非極性溶劑(例如,戊烷、1,4-二噁烷、氯仿、二氯甲烷、二乙醚、己烷、庚烷、苯、甲苯、二甲苯)。在一些實施例中,第一鹽膏狀物可經固化以藉由移除溶劑及/或有機黏合劑來形成第一鹽沉積物3205、3207、2109及/或3211。在另外實施例中,可藉由在室溫下烘乾第一鹽膏狀物3103及3105(例如,自約20℃至約30℃)達八小時或更多來移除溶劑及/或有機黏合劑。在另外實施例中,可藉由在處於自約100℃至約140℃或自約100℃至約120℃之一範圍中的一溫度下烘乾第一鹽膏狀物3103及3105達在自約8分鐘至約30分鐘或自約8分鐘至約20分鐘或自約8分鐘至約15分鐘之一範圍中的一時間週期來移除溶劑及/或有機黏合劑。In some embodiments, the first salt pastes 3103 and 3105 may contain an organic binder or solvent. The organic binder may include cellulose, cellulose derivatives, hydrophobically modified ethylene oxide urethane modifier (HUER), and ethylene acrylic acid. Examples of cellulose derivatives include ethyl cellulose, methyl cellulose, and AQUAZOL (poly2ethyl-2oxazine). Solvents can include polar solvents (eg, water, ethanol, acetate, acetone, formic acid, dimethylformamide, acetonitrile, dimethylamine phenylsulfinic acid, nitromethane, propylene carbonate, poly(ether ether) ketone)) and/or non-polar solvents (eg, pentane, 1,4-dioxane, chloroform, dichloromethane, diethyl ether, hexane, heptane, benzene, toluene, xylene). In some embodiments, the first salt paste can be cured to form first salt deposits 3205, 3207, 2109, and/or 3211 by removing solvent and/or organic binder. In further embodiments, the solvent and/or organic can be removed by drying the first salt pastes 3103 and 3105 at room temperature (eg, from about 20°C to about 30°C) for eight hours or more adhesive. In further embodiments, the first salt pastes 3103 and 3105 may be dried at a temperature in a range of from about 100°C to about 140°C or from about 100°C to about 120°C. The solvent and/or organic binder is removed for a time period in the range of about 8 minutes to about 30 minutes, or from about 8 minutes to about 20 minutes, or from about 8 minutes to about 15 minutes.

在一些實施例中,如在第32圖中展示,步驟1609可包含將包含鹼金屬離子之一膏狀物塗覆至中心部分281。在一些實施例中,如所展示,步驟1609可包含將來自一容器3201之第二鹽膏狀物3203安置於中心部分481之第一中心表面區409上。在另外實施例中,雖未展示,但可將第二鹽膏狀物(例如,第二鹽沉積物3303)塗覆至中心部分481之第二中心表面區419上。在一些實施例中,來源3101可包含以上關於來源3101描述的結構中之任一者。第二鹽膏狀物3203可安置於中心部分481上,可經固化以形成第二鹽沉積物3303及/或3305,如在第33圖中展示。在另外實施例中,如在第32圖至第33圖中展示,第二鹽膏狀物3203可結合第一鹽膏狀物3103及/或3105使用以形成安置於可折疊基板407上之第一鹽沉積物3205、3207、3209及/或3211及第二鹽沉積物3303及/或3305。在另外實施例中,雖未展示,但第二鹽沉積物可安置於可折疊基板上,而不安置第一鹽沉積物。In some embodiments, as shown in FIG. 32 , step 1609 may include applying a paste comprising alkali metal ions to the central portion 281 . In some embodiments, as shown, step 1609 may include disposing a second salt paste 3203 from a container 3201 on the first central surface region 409 of the central portion 481 . In further embodiments, although not shown, a second salt paste (eg, second salt deposit 3303 ) may be applied to the second central surface region 419 of the central portion 481 . In some embodiments, source 3101 may include any of the structures described above with respect to source 3101 . A second salt paste 3203 can be disposed on the central portion 481 and can be cured to form a second salt deposit 3303 and/or 3305, as shown in FIG. 33 . In further embodiments, as shown in FIGS. 32-33 , the second salt paste 3203 may be used in conjunction with the first salt paste 3103 and/or 3105 to form a second salt paste disposed on the foldable substrate 407 . A salt deposit 3205, 3207, 3209 and/or 3211 and a second salt deposit 3303 and/or 3305. In further embodiments, although not shown, the second salt deposit may be disposed on the foldable substrate without disposing the first salt deposit.

在一些實施例中,第二鹽膏狀物3203可包含以上關於第一鹽膏狀物3103及/或3105論述的含鉀化合物及/或含鈉化合物中之一或多者。在一些實施例中,第二鹽膏狀物3203可包含與第一鹽膏狀物3103及/或3105相同之組成。在一些實施例中,第二鹽膏狀物3203可包含有機黏合劑或溶劑,包括以上關於第一鹽膏狀物3103及3105論述之有機黏合劑或溶劑。在一些實施例中,第二鹽膏狀物可經固化以藉由移除溶劑及/或有機黏合劑來形成第二鹽沉積物3303及/或3305,例如,藉由在室溫下烘乾第二鹽膏狀物3203(例如,達約8小時或更多)或在高溫(例如,自約100℃至約140℃或自約100℃至約120℃之一範圍中)下烘乾第二鹽膏狀物3203達一時間週期(例如,在自約8分鐘至約30分鐘,或自約8分鐘至約20分鐘,或自約8分鐘至約15分鐘之一範圍中)。In some embodiments, the second salt paste 3203 can include one or more of the potassium- and/or sodium-containing compounds discussed above with respect to the first salt pastes 3103 and/or 3105. In some embodiments, the second salt paste 3203 may comprise the same composition as the first salt paste 3103 and/or 3105 . In some embodiments, the second salt paste 3203 may comprise an organic binder or solvent, including the organic binders or solvents discussed above with respect to the first salt pastes 3103 and 3105. In some embodiments, the second salt paste can be cured to form second salt deposits 3303 and/or 3305 by removing solvent and/or organic binder, eg, by drying at room temperature The second salt paste 3203 (eg, for about 8 hours or more) or is dried at high temperature (eg, in one of the range from about 100°C to about 140°C or from about 100°C to about 120°C) Di-salt paste 3203 for a period of time (eg, in a range from about 8 minutes to about 30 minutes, or from about 8 minutes to about 20 minutes, or from about 8 minutes to about 15 minutes).

在一些實施例中,第二鹽膏狀物3203可包含小於第一鹽膏狀物之對應濃度的以氧化物為基礎之鉀及/或鈉濃度。在另外實施例中,作為第一鹽膏狀物之對應濃度之一百分比的以氧化物為基礎之鉀及/或鈉濃度可為約10%或更大、約20%或更大、約25%或更大、約80%或更小、約60%或更小、約50%或更小、約40%或更小或約30%或更小。在另外實施例中,作為第一鹽膏狀物之對應濃度之一百分比的以氧化物為基礎之鉀及/或鈉濃度可在自約10%至約80%、自約10%至約60%、自約20%至約60%、自約20%至約50%、自約25%至約50%、自約25%至約40%、自約25%至約30%之一範圍或其間之任一範圍或子範圍中。In some embodiments, the second salt paste 3203 may comprise an oxide-based potassium and/or sodium concentration that is less than the corresponding concentration of the first salt paste. In further embodiments, the oxide-based potassium and/or sodium concentration as a percentage of the corresponding concentration of the first salt paste may be about 10% or more, about 20% or more, about 25% % or more, about 80% or less, about 60% or less, about 50% or less, about 40% or less, or about 30% or less. In further embodiments, the oxide-based potassium and/or sodium concentration as a percentage of the corresponding concentration of the first salt paste may be from about 10% to about 80%, from about 10% to about 60% %, a range from about 20% to about 60%, from about 20% to about 50%, from about 25% to about 50%, from about 25% to about 40%, from about 25% to about 30%, or in any range or subrange in between.

在一些實施例中,第二鹽膏狀物3203可包含一或多種鹼土金屬(例如,鹼土金屬離子、含鹼土金屬之化合物)。在另外實施例中,第二鹽膏狀物中之一或多種鹼土金屬可包含鈣(例如,鈣離子、氯化鈣、硝酸鈣、碳酸鉀)。並不希望受到理論約束,在鹽膏狀物中提供一或多種鹼土金屬可減小化學強化之範圍,例如,藉由與鹽膏狀物中之鹼金屬競爭,此減小可折疊基板中之離子與鹽膏狀物中之鹼金屬離子之間的交換速率。並不希望受到理論約束,在鹽膏狀物中提供鈣作為一或多種鹼土金屬可比其他鹼土金屬有效地與鉀競爭,此係由於鉀離子與鈣離子之間的離子半徑及質量之類似性。在另外實施例中,一或多種鹼土金屬(例如,鈣)之濃度可為約10 ppm或更大、約50 ppm或更大、約100 ppm或更大、約200 ppm或更大、約400 ppm或更大、約10,000 ppm或更小、約5,000 ppm或更小、約2,000 ppm或更小、約1,000 ppm或更小、約750 ppm或更小或約500 ppm或更小。在另外實施例中,一或多種鹼土金屬(例如,鈣)之濃度可在自約10 ppm至約10,000 ppm、自約10 ppm至約5,000 ppm、自約50 ppm至約5,000 ppm、自約50 ppm至約2,000 ppm、自約100 ppm至約2,000 ppm、自約100 ppm至約1,000 ppm、自約200 ppm至約1,000 ppm、自約200 ppm至約750 ppm、自約400 ppm至約750 ppm、自約400 ppm至約500 ppm之一範圍或其間之任一範圍或子範圍中。In some embodiments, the second salt paste 3203 may include one or more alkaline earth metals (eg, alkaline earth metal ions, alkaline earth metal-containing compounds). In further embodiments, the one or more alkaline earth metals in the second salt paste may comprise calcium (eg, calcium ions, calcium chloride, calcium nitrate, potassium carbonate). Without wishing to be bound by theory, providing one or more alkaline earth metals in the salt paste can reduce the range of chemical strengthening, eg, by competing with the alkali metals in the salt paste, which reduces the The rate of exchange between ions and alkali metal ions in the salt paste. Without wishing to be bound by theory, providing calcium as one or more alkaline earth metals in a salt paste can compete with potassium more effectively than other alkaline earth metals due to the similarities in ionic radius and mass between potassium and calcium ions. In further embodiments, the concentration of one or more alkaline earth metals (eg, calcium) may be about 10 ppm or greater, about 50 ppm or greater, about 100 ppm or greater, about 200 ppm or greater, about 400 ppm or greater ppm or more, about 10,000 ppm or less, about 5,000 ppm or less, about 2,000 ppm or less, about 1,000 ppm or less, about 750 ppm or less, or about 500 ppm or less. In further embodiments, the concentration of the one or more alkaline earth metals (eg, calcium) may be from about 10 ppm to about 10,000 ppm, from about 10 ppm to about 5,000 ppm, from about 50 ppm to about 5,000 ppm, from about 50 ppm to about 5,000 ppm ppm to about 2,000 ppm, from about 100 ppm to about 2,000 ppm, from about 100 ppm to about 1,000 ppm, from about 200 ppm to about 1,000 ppm, from about 200 ppm to about 750 ppm, from about 400 ppm to about 750 ppm , in a range from about 400 ppm to about 500 ppm, or any range or sub-range therebetween.

在步驟1609後,如在第33圖中展示,本揭露內容之方法可繼續進行至步驟1611,包含加熱可折疊基板407。在一些實施例中,如所展示,可折疊基板407可置放於爐3301中。在另外實施例中,如所展示,可折疊基板407可包含複數個第一鹽沉積物3205、3207、3209及/或3211,及一或多個第二鹽沉積物3303及/或3305。在一些實施例中,雖未展示,但在步驟1609中加熱(例如,在爐3304中)之可折疊基板407可包含第一鹽沉積物3205、3207、3209及/或3211,但不包含任何第二鹽沉積物3303及/或3305,或反之亦然。在一些實施例中,可折疊基板407可在約300℃或更大、約360℃或更大、約400℃或更大、約500℃或更小、約460℃或更小或約400℃或更小之一溫度下加熱。在一些實施例中,可折疊基板407可在自約300℃至約500℃、自約360℃至約500℃、自約400℃至約500℃、自約300℃至約460℃、自約360℃至約460℃、自約400℃至約460℃、自約300℃至約400℃、自約360℃至約400℃之一範圍或其間之任一範圍或子範圍中的一溫度下加熱。在一些實施例中,可折疊基板407可經加熱達約15分鐘或更多、約1小時或更多、約3小時或更多、約48小時或更少、約24小時或更少或約8小時或更少。在一些實施例中,可折疊基板407可經加熱達在自約15分鐘至約48小時、自約1小時至約48小時、自約3小時至約48小時、自約15小時至約24小時、自約1小時至約24小時、自約3小時至約48小時、自約3小時至約24小時、自約3小時至約8小時之一範圍或其間之任一範圍或子範圍中的一時間。在已加熱可折疊基板407後,可折疊基板407可包含化學加強之第一部分421、第二部分431及/或中心部分481,該等部分可包含如上所論述的具有相關聯之壓縮深度及/或層深度之壓縮應力區域,該等深度可進一步包含以上論述之任何及/或所有關係(例如,作為基板厚度之一百分比的距第一表面區、第二表面區、第三表面區及/或第四表面區之壓縮深度及/或層深度與作為中心厚度之一百分比的距第一中心表面區及/或第二中心表面區之對應深度之間的絕對差)。After step 1609 , as shown in FIG. 33 , the method of the present disclosure may proceed to step 1611 , including heating the foldable substrate 407 . In some embodiments, foldable substrate 407 may be placed in oven 3301 as shown. In further embodiments, as shown, the foldable substrate 407 may include a plurality of first salt deposits 3205, 3207, 3209 and/or 3211, and one or more second salt deposits 3303 and/or 3305. In some embodiments, although not shown, the foldable substrate 407 heated in step 1609 (eg, in the oven 3304) may include the first salt deposits 3205, 3207, 3209, and/or 3211, but not any The second salt deposits 3303 and/or 3305, or vice versa. In some embodiments, the foldable substrate 407 can be at about 300°C or greater, about 360°C or greater, about 400°C or greater, about 500°C or less, about 460°C or less, or about 400°C or lower temperature. In some embodiments, the foldable substrate 407 can be heated from about 300°C to about 500°C, from about 360°C to about 500°C, from about 400°C to about 500°C, from about 300°C to about 460°C, from about at a temperature in a range of 360°C to about 460°C, from about 400°C to about 460°C, from about 300°C to about 400°C, from about 360°C to about 400°C, or any range or sub-range therebetween heating. In some embodiments, the foldable substrate 407 can be heated for about 15 minutes or more, about 1 hour or more, about 3 hours or more, about 48 hours or less, about 24 hours or less or about 8 hours or less. In some embodiments, the foldable substrate 407 can be heated for from about 15 minutes to about 48 hours, from about 1 hour to about 48 hours, from about 3 hours to about 48 hours, from about 15 hours to about 24 hours , from about 1 hour to about 24 hours, from about 3 hours to about 48 hours, from about 3 hours to about 24 hours, from about 3 hours to about 8 hours, or any range or sub-range therebetween a time. After the foldable substrate 407 has been heated, the foldable substrate 407 may include chemically strengthened first portion 421, second portion 431, and/or central portion 481, which portions may include as discussed above with associated compression depths and/or or compressive stress regions for layer depths, which depths may further include any and/or all of the relationships discussed above (e.g., distance from the first surface region, second surface region, third surface region, and/or as a percentage of substrate thickness) or the absolute difference between the compression depth and/or layer depth of the fourth surface region and the corresponding depth from the first and/or second central surface region as a percentage of the central thickness).

在步驟1611後,如在第34圖中展示,本揭露內容之方法可繼續進行至步驟1613,包含移除鹽膏狀物(例如,鹽沉積物)。在一些實施例中,如所展示,移除膏狀物(例如,第一鹽沉積物3209)可包含在跨表面(例如,第三表面區433)之一方向3402上移動研磨工具3401。在更另外實施例中,使用該工具可包含掃掠、刮擦、研磨、推動等。在另外實施例中,該膏狀物(例如,第一鹽沉積物3205、3207、3209及/或3211)可藉由用溶劑洗滌表面(例如,第一表面區223、第二表面區225、第三表面區233、第四表面區235)來移除。在一些實施例中,如所展示,移除膏狀物(例如,第二鹽沉積物3303)可包含在跨表面(例如,第一中心表面區409)之一方向3404上移動研磨工具3403。在更另外實施例中,使用該工具可包含掃掠、刮擦、研磨、推動等。在另外實施例中,該膏狀物(例如,第二鹽沉積物3303及/或3305)可藉由用溶劑洗滌表面(例如,第一中心表面區409及/或第二中心表面區419)來移除。After step 1611, as shown in FIG. 34, the method of the present disclosure may proceed to step 1613, including removing salt paste (eg, salt deposits). In some embodiments, as shown, removing the paste (eg, the first salt deposit 3209 ) can include moving the abrasive tool 3401 in a direction 3402 across the surface (eg, the third surface region 433 ). In still further embodiments, using the tool may include sweeping, scraping, grinding, pushing, and the like. In further embodiments, the paste (eg, first salt deposits 3205, 3207, 3209, and/or 3211) may be prepared by washing the surfaces (eg, first surface region 223, second surface region 225, The third surface area 233, the fourth surface area 235) are removed. In some embodiments, as shown, removing the paste (eg, the second salt deposit 3303 ) can include moving the abrasive tool 3403 in a direction 3404 across the surface (eg, the first central surface region 409 ). In still further embodiments, using the tool may include sweeping, scraping, grinding, pushing, and the like. In further embodiments, the paste (eg, second salt deposits 3303 and/or 3305) may be obtained by washing the surface (eg, first central surface region 409 and/or second central surface region 419) with a solvent to remove.

在步驟1613後,本揭露內容之方法可繼續進行至步驟1615,包含進一步化學強化可折疊基板407。在一些實施例中,如在第30圖中展示,在步驟1615中進一步化學強化可折疊基板407可與以上論述的在步驟1605中之化學強化類似或相同。在一些實施例中,如在第30圖中展示,步驟1615可包含使包含鋰陽離子及/或鈉陽離子的可折疊基板407之至少一部分與包含鹽溶液2403之一鹽浴2401接觸,該鹽溶液包含以上關於步驟1615或1509論述的鹼金屬離子及/或含鹼金屬之化合物中之一或多者。在一些實施例中,鹽溶液2403可包含在以上關於步驟1615或1509論述的範圍中之一或多者內之一溫度。在步驟1615後,可折疊基板407可包含一或多個壓縮應力區域(例如,第一、第二、第三、第四、第一中心及/或第二中心壓縮應力區域),其包含在以上關於對應的壓縮應力區域論述之一或多個範圍內的一壓縮深度及/或一相關聯之層深度。After step 1613 , the method of the present disclosure may proceed to step 1615 , including further chemically strengthening the foldable substrate 407 . In some embodiments, as shown in FIG. 30, further chemical strengthening of the foldable substrate 407 in step 1615 may be similar or identical to the chemical strengthening in step 1605 discussed above. In some embodiments, as shown in FIG. 30, step 1615 may include contacting at least a portion of the foldable substrate 407 comprising lithium cations and/or sodium cations with a salt bath 2401 comprising a salt solution 2403, the salt solution Include one or more of the alkali metal ions and/or alkali metal-containing compounds discussed above with respect to steps 1615 or 1509. In some embodiments, the salt solution 2403 may comprise a temperature within one or more of the ranges discussed above with respect to steps 1615 or 1509. After step 1615, the foldable substrate 407 may include one or more regions of compressive stress (eg, first, second, third, fourth, first central, and/or second central regions of compressive stress) included in the A compression depth and/or an associated layer depth within one or more ranges is discussed above with respect to corresponding regions of compressive stress.

在一些實施例中,步驟1613或1615可進一步包含化學蝕刻可折疊基板407。如上所述,化學蝕刻可折疊基板407可包含使可折疊基板407與蝕刻浴中含有之一蝕刻溶液接觸。在一些實施例中,蝕刻第一主表面403及第一中心表面區409。在一些實施例中,蝕刻第二主表面405及第二中心表面區419。在另外實施例中,蝕刻第一主表面403、第一中心表面區409、第二主表面405及/或第二中心表面區419。化學蝕刻若在步驟1613或1615中存在,則可經設計成移除可自化學強化可折疊基板407遺留之表面瑕疵。實際上,化學強化可導致可影響可折疊基板407之強度及/或光學品質的表面瑕疵。藉由在步驟1613或1615期間之蝕刻,可移除在化學強化期間產生之表面瑕疵。在一些實施例中,此蝕刻可經設計成移除包含約1 nm或更大、約5 nm或更大、約2 μm或更小、約1 μm或更小、約500 nm或更小、約100 nm或更小、約50 nm或更小或約10 nm或更小之深度的層之一部分。在一些實施例中,此蝕刻可經設計成移除包含在自約1 nm至約2 µm、自約1 nm至約1 µm、自約5 nm至約1 µm、自約5 nm至約500 nm、自約5 nm至約100 nm、自約5 nm至約50 nm、自約5 nm至約10 nm之一範圍或其間之任一範圍或子範圍中之深度的層之一部分。此蝕刻可避免實質上改變可折疊基板407之厚度或在化學強化期間達成之表面壓縮。In some embodiments, steps 1613 or 1615 may further comprise chemically etching the foldable substrate 407 . As described above, chemically etching the foldable substrate 407 may include contacting the foldable substrate 407 with an etching solution contained in an etching bath. In some embodiments, the first major surface 403 and the first central surface region 409 are etched. In some embodiments, the second major surface 405 and the second central surface region 419 are etched. In further embodiments, the first major surface 403, the first central surface region 409, the second major surface 405, and/or the second central surface region 419 are etched. Chemical etching, if present in steps 1613 or 1615 , may be designed to remove surface imperfections that may be left from chemically strengthened foldable substrate 407 . In fact, chemical strengthening can result in surface imperfections that can affect the strength and/or optical quality of the foldable substrate 407 . By etching during steps 1613 or 1615, surface defects created during chemical strengthening can be removed. In some embodiments, this etch can be designed to remove about 1 nm or more, about 5 nm or more, about 2 μm or less, about 1 μm or less, about 500 nm or less, A portion of the layer to a depth of about 100 nm or less, about 50 nm or less, or about 10 nm or less. In some embodiments, this etch can be designed to remove particles ranging from about 1 nm to about 2 μm, from about 1 nm to about 1 μm, from about 5 nm to about 1 μm, from about 5 nm to about 500 μm nm, from about 5 nm to about 100 nm, from about 5 nm to about 50 nm, from about 5 nm to about 10 nm, a range of depths, or a portion of the layer in any range or subrange therebetween. This etching can avoid substantially changing the thickness of the foldable substrate 407 or the surface compression achieved during chemical strengthening.

在步驟1613或1615後,本揭露內容之方法可繼續進行至步驟1617,包含使用可折疊基板407來組裝可折疊設備。在一些實施例中,如在第47圖中展示,步驟1617可包含在第一主表面403上及/或在第一凹座434中安置一塗層251。在一些實施例中,如所展示,第二液體4703可安置於第一主表面403上。在另外實施例中,第二液體4703可安置於第一部分421之第一表面區423及第二部分431之第三表面區433上。在另外實施例中,第二液體4703可安置於第一中心表面區409上及/或填充第一凹座434。在另外實施例中,如所展示,可使用一容器4701(例如,管道、可撓性管、微量吸管或注射管)安置第二液體4703。在一些實施例中,第二液體4703可包含塗佈前驅物、溶劑、粒子、奈米粒子及/或纖維。在一些實施例中,塗佈前驅物可包含(不限於)如上參考步驟1511論述的單體、加速劑、固化劑、環氧樹脂及/或丙烯酸酯中之一或多者。第二液體4703可經固化以形成一塗層251,如在第48圖中展示。固化第二液體4703可包含加熱第二液體4703,藉由紫外線(UV)輻射輻照第二液體4703,及/或等候預定時間量(例如,自約30分鐘至24小時、自約1小時至約8小時)。在一些實施例中,如上參考步驟1511論述,可使用另一方法來形成塗層251。在一些實施例中,雖未展示,但塗層251可安置於第一凹座434中(例如,填充第一凹座434),而不接觸第一主表面403(例如,第一表面區423、第三表面區433)。After step 1613 or 1615, the method of the present disclosure may proceed to step 1617, including using the foldable substrate 407 to assemble the foldable device. In some embodiments, as shown in FIG. 47 , step 1617 may include disposing a coating 251 on the first major surface 403 and/or in the first recess 434 . In some embodiments, the second liquid 4703 may be disposed on the first major surface 403 as shown. In other embodiments, the second liquid 4703 may be disposed on the first surface area 423 of the first portion 421 and the third surface area 433 of the second portion 431 . In further embodiments, the second liquid 4703 may be disposed on the first central surface region 409 and/or fill the first recess 434 . In further embodiments, as shown, a container 4701 (eg, tubing, flexible tubing, micropipette, or syringe) may be used to accommodate the second liquid 4703. In some embodiments, the second liquid 4703 may include coating precursors, solvents, particles, nanoparticles, and/or fibers. In some embodiments, the coating precursor may include, without limitation, one or more of the monomers, accelerators, curing agents, epoxy resins, and/or acrylates discussed above with reference to step 1511 . The second liquid 4703 can be cured to form a coating 251, as shown in FIG. Curing the second liquid 4703 can include heating the second liquid 4703, irradiating the second liquid 4703 with ultraviolet (UV) radiation, and/or waiting a predetermined amount of time (eg, from about 30 minutes to 24 hours, from about 1 hour to about 8 hours). In some embodiments, as discussed above with reference to step 1511, another method may be used to form coating 251. In some embodiments, although not shown, coating 251 may be disposed in first recess 434 (eg, fill first recess 434 ) without contacting first major surface 403 (eg, first surface region 423 ) , the third surface area 433).

在一些實施例中,如在第48圖中展示,步驟1617可包含將一材料安置於第二凹座444中。在一些實施例中,如所展示,第三液體4803可安置於第二凹座444中。在一些實施例中,第三液體4803可包含前驅物、溶劑、粒子、奈米粒子及/或纖維。在另外實施例中,如所展示,第三液體4803可自容器4801安置於第二凹座444中,但可使用其他方法在第二凹座中沉積第三液體或其他材料,如上參考步驟1511關於第一凹座及/或第二液體所論述。在一些實施例中,第三液體4803可經固化(例如,加熱第三液體,輻照第三液體,等候指定時間量)以在第二凹座444中形成基於聚合物之部分241,如在第49圖中展示。在一些實施例中,雖未展示,但第三液體可經固化以形成安置於第二凹座444中之一黏著層,例如,類似於黏著層261。In some embodiments, as shown in FIG. 48 , step 1617 may include placing a material in the second recess 444 . In some embodiments, the third liquid 4803 can be seated in the second recess 444 as shown. In some embodiments, the third liquid 4803 may include precursors, solvents, particles, nanoparticles, and/or fibers. In further embodiments, as shown, the third liquid 4803 may be disposed in the second recess 444 from the container 4801, although other methods may be used to deposit the third liquid or other material in the second recess, as described above with reference to step 1511 Discussed with respect to the first recess and/or the second liquid. In some embodiments, the third liquid 4803 may be cured (eg, heating the third liquid, irradiating the third liquid, waiting a specified amount of time) to form the polymer-based portion 241 in the second recess 444, as in Shown in Figure 49. In some embodiments, although not shown, the third liquid may be cured to form an adhesive layer disposed in the second recess 444 , eg, similar to the adhesive layer 261 .

在步驟1613或1615後,如在第49圖中展示,方法可繼續進行至步驟1619,包含使用可折疊基板407來組裝可折疊設備。如在第49圖中展示,步驟1617可包含塗覆黏著層261以使第二主表面405之第二表面區425與第二主表面405之第四表面區435接觸。舉例而言,在一些實施例中,黏著層261可包含黏著劑材料之一或多個薄片。在一些實施例中,可存在包含安置於第二凹座(例如,基於聚合物之部分241)中之黏著層261及/或材料之一或多個薄片之間的整體界面,此可減少(例如,避免)當光在該等薄片之間行進時之光學繞射及/或光學不連續性,此係由於在一些實施例中,一或多個薄片可包括實質上相同之折射率。在一些實施例中,雖未展示,但黏著層之至少一部分可安置於第二凹座中。在一些實施例中,一離型襯裡(例如,見第2圖及第4圖中之離型襯裡271)或一顯示裝置(例如,見第3圖及第5圖中之顯示裝置307)可安置於黏著層261(例如,第一接觸表面263)上。在步驟1617,根據製作可折疊設備的第16圖中之流程圖的本揭露內容之方法可在步驟1619處完成。After step 1613 or 1615, as shown in FIG. 49, the method may proceed to step 1619, including using the foldable substrate 407 to assemble the foldable device. As shown in FIG. 49 , step 1617 may include applying the adhesive layer 261 to bring the second surface region 425 of the second major surface 405 into contact with the fourth surface region 435 of the second major surface 405 . For example, in some embodiments, the adhesive layer 261 may comprise one or more sheets of adhesive material. In some embodiments, there may be an integral interface between one or more sheets including the adhesive layer 261 and/or material disposed in the second recess (eg, the polymer-based portion 241 ), which may reduce ( For example, avoid optical diffraction and/or optical discontinuities as light travels between the flakes, since in some embodiments one or more flakes may comprise substantially the same index of refraction. In some embodiments, although not shown, at least a portion of the adhesive layer may be disposed in the second recess. In some embodiments, a release liner (eg, see release liner 271 in Figures 2 and 4) or a display device (eg, see display device 307 in Figures 3 and 5) can be Disposed on the adhesive layer 261 (eg, the first contact surface 263 ). At step 1617 , the method of the present disclosure according to the flowchart in FIG. 16 of making a foldable device may be completed at step 1619 .

在一些實施例中,根據本揭露內容之實施例的製作一可折疊設備之方法可沿著第16圖中之流程圖之步驟1601、1603、1605、1607、1609、1611、1613、1615、1617及1619依序進行,如上所論述。在一些實施例中,如在第16圖中展示,箭頭1602可跟在步驟1601後,省略步驟1603,例如,當可折疊基板407已包含一或多個凹座時。在一些實施例中,箭頭1604可跟在步驟1601後,至包含在可折疊基板上安置一遮罩之步驟1609,例如,若該可折疊設備在步驟1501之結尾包含凹座,且可折疊基板407已包含初始壓縮應力區域,或可折疊基板407將直至步驟1609後方加以化學強化。在一些實施例中,箭頭1608可跟在步驟1603後,至包含在可折疊基板407上安置一遮罩之步驟1609,例如,若可折疊基板407已包含初始壓縮應力區域,或可折疊基板407將直至步驟1609後方加以化學強化。在另外實施例中,方法可沿著箭頭1612,自步驟1613至包含組裝可折疊設備之步驟1617,例如,若塗層251將不安置於第一凹座434中及/或第一主表面403上,且基於聚合物之部分241將不安置於第二凹座444中。在一些實施例中,方法可沿著自步驟1613至步驟1619之箭頭1614,例如,若可折疊基板407係所要的產品(例如,在第一凹座或第二凹座中無材料)。在一些實施例中,方法可沿著自步驟1615至步驟1619之箭頭1618,例如,若可折疊設備將不包含一離型襯裡271、顯示裝置307及/或黏著層261。以上選項中之任何者可經組合以製作根據本揭露內容之實施例的可折疊設備。In some embodiments, a method of making a foldable device according to embodiments of the present disclosure may follow steps 1601 , 1603 , 1605 , 1607 , 1609 , 1611 , 1613 , 1615 , 1617 of the flowchart in FIG. 16 and 1619 in sequence, as discussed above. In some embodiments, as shown in FIG. 16, arrow 1602 may follow step 1601, omitting step 1603, eg, when foldable substrate 407 already includes one or more recesses. In some embodiments, arrow 1604 may follow step 1601 to step 1609 that includes placing a mask on the foldable substrate, eg, if the foldable device includes a recess at the end of step 1501, and the foldable substrate 407 already contains areas of initial compressive stress, or the foldable substrate 407 will be chemically strengthened until after step 1609. In some embodiments, arrow 1608 may follow step 1603 to step 1609 that includes placing a mask on foldable substrate 407, eg, if foldable substrate 407 already includes an area of initial compressive stress, or foldable substrate 407 Chemical strengthening is applied until after step 1609. In further embodiments, the method may follow arrow 1612 from step 1613 to step 1617 comprising assembling the foldable device, eg, if coating 251 is not to be seated in first recess 434 and/or first major surface 403 , and the polymer-based portion 241 will not be seated in the second recess 444 . In some embodiments, the method may follow arrow 1614 from step 1613 to step 1619, eg, if the foldable substrate 407 is the desired product (eg, no material in the first pocket or the second pocket). In some embodiments, the method may follow arrow 1618 from step 1615 to step 1619 , eg, if the foldable device would not include a release liner 271 , display device 307 and/or adhesive layer 261 . Any of the above options can be combined to make a foldable device according to embodiments of the present disclosure.

現將參看第35圖至第39圖及第47圖至第49圖及第17圖中之流程圖來論述製作在第8圖中圖示的類似於可折疊設備701之可折疊設備及/或類似於可折疊基板707之可折疊基板之實例實施例。在本揭露內容之方法之第一步驟1701中,方法可開始於提供一可折疊基板707。在一些實施例中,可藉由購買或以其他方式獲得基板或藉由形成可折疊基板來提供可折疊基板707。在一些實施例中,可折疊基板707可包含一基於玻璃之基板及/或一基於陶瓷之基板。在另外實施例中,基於玻璃之基板及/或基於陶瓷之基板可藉由以多種條帶形成製程(例如,槽拉、下拉、熔融下拉、上拉、壓滾、重拉或浮動)來形成其而提供。在另外實施例中,可藉由加熱基於玻璃之基板以使一或多個陶瓷晶體結晶來提供基於陶瓷之基板。可折疊基板707可包含可沿著一平面延伸之一第二主表面405(見第35圖),及/或亦可沿著一平面延伸的與第一主表面403相對之一第二主表面405。在另外實施例中,第一凹座3534可藉由蝕刻、雷射燒蝕或機械加工第一主表面403來形成。舉例而言,機械加工可折疊基板707可類似於以上論述之步驟1603。在一些實施例中,在步驟1701中,可折疊基板707可具備一或多個初始壓縮應力區域,例如,具有以上參考步驟1605論述的性質中之一或多者。Making a foldable device similar to the foldable device 701 illustrated in Figure 8 and/or the flow charts in Figures 35-39 and 47-49 and 17 will now be discussed An example embodiment of a foldable substrate similar to foldable substrate 707 . In a first step 1701 of the method of the present disclosure, the method may begin by providing a foldable substrate 707 . In some embodiments, the foldable substrate 707 may be provided by purchasing or otherwise obtaining the substrate or by forming a foldable substrate. In some embodiments, the foldable substrate 707 may include a glass-based substrate and/or a ceramic-based substrate. In further embodiments, glass-based substrates and/or ceramic-based substrates may be formed by various strip-forming processes (eg, slot draw, draw down, fusion draw, pull up, roll, redraw, or float) it is provided. In further embodiments, the ceramic-based substrate may be provided by heating the glass-based substrate to crystallize one or more ceramic crystals. The foldable substrate 707 can include a second major surface 405 (see FIG. 35 ) that can extend along a plane, and/or a second major surface opposite the first major surface 403 that can also extend along a plane 405. In other embodiments, the first recess 3534 may be formed by etching, laser ablation, or machining the first major surface 403 . For example, machining the foldable substrate 707 may be similar to step 1603 discussed above. In some embodiments, in step 1701 , the foldable substrate 707 may be provided with one or more regions of initial compressive stress, eg, having one or more of the properties discussed above with reference to step 1605 .

在一些實施例中,在步驟1701中,可折疊基板707可具備在可折疊基板707之第一主表面403中之一第一凹座3534,其暴露在中心部分781中的可折疊基板707之現有第一中心表面區3609,如在第35圖中展示。在另外實施例中,現有第一中心表面區3609之一部分可沿著一第一中心平面3704a延伸。在一些實施例中,雖未展示,但可折疊基板可具備在可折疊基板之第二主表面中之一第二凹座,其暴露在中心部分中的可折疊基板之一第二中心表面區。在一些實施例中,如在第35圖中展示,現有第一中心表面區3609可包含一第一過渡部分3553(例如,類似於第8圖中之第一過渡部分853)及/或一第二過渡部分3555(例如,類似於第8圖中之第二過渡部分855)。在另外實施例中,如所展示,第一過渡部分3553之厚度可自包含第一中心平面3704a的現有第一中心表面區3609之一部分至第一部分421連續增大。在另外實施例中,如所展示,第二過渡部分3555之厚度可自包含第一中心平面3704a的現有第一中心表面區3609之一部分至第二部分431連續增大。In some embodiments, in step 1701 , the foldable substrate 707 may be provided with a first recess 3534 in the first major surface 403 of the foldable substrate 707 that is exposed between the foldable substrate 707 in the central portion 781 There is a first central surface region 3609, as shown in FIG. In other embodiments, a portion of the existing first central surface region 3609 may extend along a first central plane 3704a. In some embodiments, although not shown, the foldable substrate can be provided with a second recess in a second major surface of the foldable substrate that exposes a second central surface area of the foldable substrate in the central portion . In some embodiments, as shown in Figure 35, the existing first central surface region 3609 may include a first transition portion 3553 (eg, similar to the first transition portion 853 in Figure 8) and/or a first transition portion 3553 Two transition portions 3555 (eg, similar to the second transition portion 855 in Figure 8). In further embodiments, as shown, the thickness of the first transition portion 3553 may increase continuously from a portion of the existing first central surface region 3609 that includes the first central plane 3704a to the first portion 421 . In further embodiments, as shown, the thickness of the second transition portion 3555 may increase continuously from a portion of the existing first central surface region 3609 that includes the first central plane 3704a to the second portion 431 .

在步驟1701後,如在第35圖中展示,方法可繼續進行至步驟1703,包含化學強化可折疊基板707。在一些實施例中,如所展示,化學強化可折疊基板707可包含使包含鋰陽離子及/或鈉陽離子的可折疊基板707之至少一部分與包含鹽溶液2403之一鹽浴2401接觸,該鹽溶液可包含以上關於步驟1713針對鹽溶液2403論述的組分中之一或多者。在一些實施例中,鹽溶液2403之溫度及/或可折疊基板707可接觸鹽溶液2403之時間可在以上參考步驟1509論述的範圍中之一或多者內。在一些實施例中,步驟1703中之化學強化可折疊基板707可包含化學強化第一主表面403以形成自第一部分421之第一主表面403延伸至初始第一壓縮深度之一初始第一壓縮應力區域,化學強化第一主表面403以形成自第二部分431之第一主表面403延伸至初始第三壓縮深度之一初始第三壓縮應力區域,化學強化第二主表面405以形成自第一部分421中之第二主表面405延伸至初始第二壓縮深度之一初始第二壓縮應力區域,化學強化第二主表面405以形成自第二部分431中之第二主表面405延伸至初始第四壓縮深度之一初始第四壓縮應力區域,化學強化現有第一中心表面區3609以形成自現有第一中心表面區3609延伸至初始第一中心壓縮深度之一初始第一中心壓縮應力區域,及化學強化第二主表面405以形成自中心部分781中之第二主表面405延伸至初始第二中心壓縮深度之一初始第二中心壓縮應力區域。在一些實施例中,作為基板厚度411之一百分比的初始第一壓縮深度、初始第二壓縮深度、初始第三壓縮深度及/或初始第四壓縮深度可為約5%或更大、10%或更大、約12%或更大、約14%或更大、約25%或更小、約20%或更小、約18%或更小或約16%或更小。在一些實施例中,作為基板厚度411之一百分比的初始第一壓縮深度、初始第二壓縮深度、初始第三壓縮深度及/或初始第四壓縮深度可在自約5%至約25%、自約8%至約25%、自約8%至約20%、自約10%至約20%、自約10%至約18%、自約12%至約18%、自約12%至約16%、自約14%至約16%之一範圍或其間之任一範圍或子範圍中。在一些實施例中,作為完工的可折疊基板407之對應的壓縮深度之一百分比的初始第一壓縮深度、初始第二壓縮深度、初始第三壓縮深度及/或初始第四壓縮深度可為約50%或更大、60%或更大、約65%或更大、約68%或更大、約80%或更小、約75%或更小、或約72%或更小、或約70%或更小。在一些實施例中,作為完工的可折疊基板407之對應的壓縮深度之一百分比的初始第一壓縮深度、初始第二壓縮深度、初始第三壓縮深度及/或初始第四壓縮深度可在自約50%至約80%、自約60%至約80%、自約60%至約75%、自約65%至約75%、自約65%至約72%、自約68%至約72%、自約68%至約70%之一範圍或其間之任一範圍或子範圍中。在一些實施例中,作為基板厚度411之一百分比的初始第一層深度、初始第二層深度、初始第三層深度及/或初始第四層深度可為約5%或更大、10%或更大、約12%或更大、約14%或更大、約25%或更小、約20%或更小、約18%或更小或約16%或更小。在一些實施例中,作為基板厚度411之一百分比的初始第一層深度、初始第二層深度、初始第三層深度及/或初始第四層深度可在自約5%至約25%、自約8%至約25%、自約8%至約20%、自約10%至約20%、自約10%至約18%、自約12%至約18%、自約12%至約16%、自約14%至約16%之一範圍或其間之任一範圍或子範圍中。在一些實施例中,作為完工的可折疊基板407之對應的層深度之一百分比的初始第一層深度、初始第二層深度、初始第三層深度及/或初始第四層深度可為約50%或更大、60%或更大、約65%或更大、約68%或更大、約80%或更小、約75%或更小、或約72%或更小、或約70%或更小。在一些實施例中,作為完工的可折疊基板407之對應的壓縮深度之一百分比的初始第一層深度、初始第二層深度、初始第三層深度及/或初始第四層深度可在自約50%至約80%、自約60%至約80%、自約60%至約75%、自約65%至約75%、自約65%至約72%、自約68%至約72%、自約68%至約70%之一範圍或其間之任一範圍或子範圍中。After step 1701 , as shown in FIG. 35 , the method may proceed to step 1703 including chemically strengthening the foldable substrate 707 . In some embodiments, as shown, chemically strengthening the foldable substrate 707 can include contacting at least a portion of the foldable substrate 707 comprising lithium cations and/or sodium cations with a salt bath 2401 comprising a salt solution 2403, the salt solution One or more of the components discussed above with respect to step 1713 for saline solution 2403 may be included. In some embodiments, the temperature of the salt solution 2403 and/or the time for which the foldable substrate 707 can contact the salt solution 2403 may be within one or more of the ranges discussed above with reference to step 1509 . In some embodiments, chemically strengthened foldable substrate 707 in step 1703 may include chemically strengthened first major surface 403 to form an initial first compression extending from first major surface 403 of first portion 421 to an initial first compression depth Stressed region, chemically strengthened first major surface 403 to form an initial third compressive stress region extending from first major surface 403 of second portion 431 to an initial third compression depth, chemically strengthened second major surface 405 to form from the first The second major surface 405 in the portion 421 extends to an initial second compressive stress region at the initial second compression depth, and the second major surface 405 is chemically strengthened to form extending from the second major surface 405 in the second portion 431 to the initial second An initial fourth compressive stress region at one of the four compression depths, chemically strengthening the existing first central surface region 3609 to form an initial first central compressive stress region extending from the existing first central surface region 3609 to the initial first central compression depth, and The second major surface 405 is chemically strengthened to form an initial second central compressive stress region extending from the second major surface 405 in the central portion 781 to the initial second central compressive depth. In some embodiments, the initial first depth of compression, the initial second depth of compression, the initial third depth of compression, and/or the initial fourth depth of compression as a percentage of substrate thickness 411 may be about 5% or greater, 10% or greater, about 12% or greater, about 14% or greater, about 25% or less, about 20% or less, about 18% or less, or about 16% or less. In some embodiments, the initial first depth of compression, the initial second depth of compression, the initial third depth of compression, and/or the initial fourth depth of compression as a percentage of substrate thickness 411 may be from about 5% to about 25%, from about 8% to about 25%, from about 8% to about 20%, from about 10% to about 20%, from about 10% to about 18%, from about 12% to about 18%, from about 12% to In a range of about 16%, from about 14% to about 16%, or any range or subrange therebetween. In some embodiments, the initial first compression depth, the initial second compression depth, the initial third compression depth, and/or the initial fourth compression depth as a percentage of the corresponding compression depth of the finished foldable substrate 407 may be about 50% or more, 60% or more, about 65% or more, about 68% or more, about 80% or less, about 75% or less, or about 72% or less, or about 70% or less. In some embodiments, the initial first compression depth, the initial second compression depth, the initial third compression depth, and/or the initial fourth compression depth as a percentage of the corresponding compression depth of the finished foldable substrate 407 may be from about 50% to about 80%, from about 60% to about 80%, from about 60% to about 75%, from about 65% to about 75%, from about 65% to about 72%, from about 68% to about 72%, a range from about 68% to about 70%, or any range or subrange therebetween. In some embodiments, the initial first layer depth, initial second layer depth, initial third layer depth, and/or initial fourth layer depth as a percentage of substrate thickness 411 may be about 5% or greater, 10% or greater, about 12% or greater, about 14% or greater, about 25% or less, about 20% or less, about 18% or less, or about 16% or less. In some embodiments, the initial first layer depth, initial second layer depth, initial third layer depth, and/or initial fourth layer depth as a percentage of substrate thickness 411 may be from about 5% to about 25%, from about 8% to about 25%, from about 8% to about 20%, from about 10% to about 20%, from about 10% to about 18%, from about 12% to about 18%, from about 12% to In a range of about 16%, from about 14% to about 16%, or any range or subrange therebetween. In some embodiments, the initial first layer depth, initial second layer depth, initial third layer depth, and/or initial fourth layer depth as a percentage of the corresponding layer depths of the finished foldable substrate 407 may be about 50% or more, 60% or more, about 65% or more, about 68% or more, about 80% or less, about 75% or less, or about 72% or less, or about 70% or less. In some embodiments, the initial first layer depth, initial second layer depth, initial third layer depth, and/or initial fourth layer depth as a percentage of the corresponding compression depth of the finished foldable substrate 407 may be from about 50% to about 80%, from about 60% to about 80%, from about 60% to about 75%, from about 65% to about 75%, from about 65% to about 72%, from about 68% to about 72%, a range from about 68% to about 70%, or any range or subrange therebetween.

在步驟1701或1703後,如在第36圖中展示,方法可繼續進行至步驟1707,包含在可折疊基板707之一或多個部分上安置一遮罩。在一些實施例中,如所展示,步驟1707可包含在可折疊基板407之一或多個部分上安置第一液體2107。在另外實施例中,如以上參考步驟1503展示及論述,可使用一容器2101在可折疊基板707之一或多個部分上安置第一液體2107。在另外實施例中,如所展示,第一液體2107可安置於第一部分421之第一主表面403及現有第一中心表面區3609之第一過渡部分3553上,作為第一液體沉積物3603,及第二部分431之第一主表面403及現有第一中心表面區3609之第二過渡部分3555上,作為第二液體沉積物3605。雖未展示,但應理解,類似液體沉積物可形成於第一部分之第二主表面及/或第二部分之第二主表面上。在另外實施例中,液體沉積物(例如,第36圖中展示之第一液體沉積物3603及第二液體沉積物3605)可經固化以形成遮罩(例如,第37圖中展示之第一遮罩3705及第三遮罩3709)。固化第一液體可包含加熱第一液體2107,藉由紫外線(UV)輻射輻照第一液體2107,及/或等候預定時間量。在另外實施例中,可使用如上論述之另一方法來形成遮罩(例如,遮罩3705、3707、3709及3711)。如在第30圖中展示,第一遮罩3705可安置於第一部分421之第一主表面403及現有第一中心表面區3609之第一過渡部分3553上,第二遮罩3707可安置於第二部分431之第一主表面403及現有第一中心表面區3609之第二過渡部分3555上,第三遮罩3709可安置於第一部分421之第二主表面405上,及/或第四遮罩3711可安置於第二部分431之第二主表面405上。After step 1701 or 1703 , as shown in FIG. 36 , the method may proceed to step 1707 including disposing a mask on one or more portions of the foldable substrate 707 . In some embodiments, step 1707 may include disposing the first liquid 2107 on one or more portions of the foldable substrate 407, as shown. In further embodiments, as shown and discussed above with reference to step 1503, a container 2101 may be used to place the first liquid 2107 on one or more portions of the foldable substrate 707. In further embodiments, as shown, the first liquid 2107 may be disposed on the first major surface 403 of the first portion 421 and the first transition portion 3553 of the existing first central surface region 3609 as the first liquid deposit 3603, And on the first main surface 403 of the second portion 431 and the second transition portion 3555 of the existing first central surface region 3609, as the second liquid deposit 3605. Although not shown, it should be understood that similar liquid deposits may form on the second major surface of the first portion and/or the second major surface of the second portion. In further embodiments, the liquid deposits (eg, the first liquid deposit 3603 and the second liquid deposit 3605 shown in FIG. 36 ) can be cured to form a mask (eg, the first liquid deposit 3605 shown in FIG. 37 ) mask 3705 and third mask 3709). Curing the first liquid may include heating the first liquid 2107, irradiating the first liquid 2107 with ultraviolet (UV) radiation, and/or waiting a predetermined amount of time. In further embodiments, the masks (eg, masks 3705, 3707, 3709, and 3711) may be formed using another method as discussed above. As shown in FIG. 30, the first mask 3705 may be disposed on the first major surface 403 of the first portion 421 and the first transition portion 3553 of the existing first central surface area 3609, and the second mask 3707 may be disposed on the first On the first main surface 403 of the two parts 431 and the second transition part 3555 of the existing first central surface area 3609, the third mask 3709 may be disposed on the second main surface 405 of the first part 421, and/or the fourth mask The cover 3711 may be disposed on the second major surface 405 of the second portion 431 .

在步驟1707後,如在第37圖中展示,方法可繼續進行至步驟1709,包含蝕刻可折疊基板707。在一些實施例中,如所展示,蝕刻可包含將可折疊基板707曝露於一蝕刻劑2203(例如,一或多種無機酸)。在另外實施例中,如所展示,蝕刻劑2203可為蝕刻劑浴2201中含有之液體蝕刻劑。在另外實施例中,如所展示,蝕刻可包含蝕刻中心部分781之一部分(例如,現有第一中心表面區3609之未遮蔽部分)以形成一第一中心表面區709。在另外實施例中,如所展示,藉由蝕刻形成之第一中心表面區709可自第一中心平面3704a凹進去一過渡深度727。在另外實施例中,藉由蝕刻形成之第一中心表面區709可包含第一過渡部分753及/或第二過渡部分755,該等過渡部分包含包含過渡深度727的對應過渡部分之厚度之突然改變。在另外實施例中,如所展示,蝕刻可在第二主表面405與第二中心表面區719之間形成第二凹座444。After step 1707 , as shown in FIG. 37 , the method may proceed to step 1709 including etching the foldable substrate 707 . In some embodiments, as shown, etching can include exposing the foldable substrate 707 to an etchant 2203 (eg, one or more inorganic acids). In further embodiments, as shown, the etchant 2203 may be a liquid etchant contained in the etchant bath 2201 . In further embodiments, as shown, etching may include etching a portion of central portion 781 (eg, an unmasked portion of existing first central surface region 3609 ) to form a first central surface region 709 . In further embodiments, as shown, the first central surface region 709 formed by etching may be recessed by a transition depth 727 from the first central plane 3704a. In further embodiments, the first central surface region 709 formed by etching may include a first transition portion 753 and/or a second transition portion 755 that include abrupt changes in the thickness of the corresponding transition portion including the transition depth 727 Change. In further embodiments, as shown, the etching may form a second recess 444 between the second major surface 405 and the second central surface region 719 .

在步驟1709後,如在第38圖中展示,方法可繼續進行至步驟1711,包含移除該(等)遮罩。在一些實施例中,如在第38圖中展示,移除該(等)遮罩(例如,遮罩3705、3707、3709及3711)可包含在跨表面(例如,第三表面區433)之一方向3802上移動研磨工具3801。在更另外實施例中,使用該工具可包含掃掠、刮擦、研磨、推動等。在另外實施例中,該(等)遮罩(例如,遮罩3705、3707、3709及3711)可藉由用溶劑洗滌表面(例如,第一表面區423、第二表面區425、第三表面區433、第四表面區435)來移除。在一些實施例中,移除該(等)遮罩可包含分別自第一表面區423、第二表面區425、第三表面區433、第四表面區435移除遮罩3705、3707、3709及3711。After step 1709, as shown in FIG. 38, the method may proceed to step 1711, including removing the mask(s). In some embodiments, as shown in FIG. 38, removing the mask(s) (eg, masks 3705, 3707, 3709, and 3711) may be included in the spanning surface (eg, third surface region 433) Move the grinding tool 3801 in a direction 3802. In still further embodiments, using the tool may include sweeping, scraping, grinding, pushing, and the like. In further embodiments, the mask(s) (eg, masks 3705, 3707, 3709, and 3711) may be prepared by washing the surfaces (eg, first surface region 423, second surface region 425, third surface) with a solvent area 433, fourth surface area 435) to remove. In some embodiments, removing the mask(s) may include removing the masks 3705, 3707, 3709 from the first surface region 423, the second surface region 425, the third surface region 433, the fourth surface region 435, respectively and 3711.

在步驟1703後,方法可繼續進行至步驟1705,包含機械加工可折疊基板707。類似於步驟1707之效應,步驟1705可自包含第一中心平面3704a及/或第二主表面405之中心部分781的現有第一中心表面區3609移除材料。機械加工可折疊基板707可包含以上參考步驟1517論述的技術中之任一者。After step 1703 , the method may continue to step 1705 including machining the foldable substrate 707 . Similar to the effect of step 1707, step 1705 may remove material from the existing first central surface region 3609 including the first central plane 3704a and/or the central portion 781 of the second major surface 405. Machining the foldable substrate 707 may include any of the techniques discussed above with reference to step 1517 .

在步驟1711或1705後,如在第39圖中展示,方法可繼續進行至步驟1713,包含化學強化可折疊基板707。在一些實施例中,如所展示,化學強化可折疊基板707可包含使包含鋰陽離子及/或鈉陽離子的可折疊基板707之至少一部分與包含鹽溶液2403之一鹽浴2401接觸,該鹽溶液可包含以上關於步驟1509針對鹽溶液2403論述的組分中之一或多者。在一些實施例中,鹽溶液2403之溫度及/或可折疊基板707可接觸鹽溶液2403之時間可在以上參考步驟1509論述的範圍中之一或多者內。在一些實施例中,步驟1713中之化學強化可折疊基板707可包含化學強化第一表面區423以形成自第一表面區423延伸至第一壓縮深度之一第一壓縮應力區域,化學強化第二表面區425以形成自第二表面區425延伸至第二壓縮深度之一第二壓縮應力區域,化學強化第三表面區433以形成自第三表面區433延伸至第三壓縮深度之一第三壓縮應力區域,化學強化第四表面區435以形成自第四表面區435延伸至第四壓縮深度之一第四壓縮應力區域,化學強化第一中心表面區709以形成自第一中心表面區709延伸至第一中心壓縮深度之一第一中心壓縮應力區域,及化學強化第二中心表面區719以形成自第二中心表面區719延伸至第二中心壓縮深度之一第二中心壓縮應力區域。在步驟1713後,可折疊基板可包含一或多個壓縮應力區域(例如,第一、第二、第三、第四、第一中心及/或第二中心壓縮應力區域),其包含在以上關於對應的壓縮應力區域論述之一或多個範圍內的一壓縮深度及/或一相關聯之層深度。在另外實施例中,第一層深度、第二層深度、第三層深度或第四層深度中之一者除以基板厚度與第一中心層深度或第二中心層深度除以中心厚度之間的絕對差可在以上論述的範圍中之一或多者內。在另外實施例中,第一壓縮深度、第二壓縮深度、第三壓縮深度或第四壓縮深度中之一者除以基板厚度與第一中心壓縮深度或第二中心壓縮深度除以中心厚度之間的絕對差可在以上論述的範圍中之一或多者內。在另外實施例中,第一平均鉀濃度或第二平均鉀濃度與中心平均鉀濃度之間的絕對差可在以上論述的範圍中之一或多者內。After step 1711 or 1705 , as shown in FIG. 39 , the method may proceed to step 1713 including chemically strengthening the foldable substrate 707 . In some embodiments, as shown, chemically strengthening the foldable substrate 707 can include contacting at least a portion of the foldable substrate 707 comprising lithium cations and/or sodium cations with a salt bath 2401 comprising a salt solution 2403, the salt solution One or more of the components discussed above with respect to step 1509 for saline solution 2403 may be included. In some embodiments, the temperature of the salt solution 2403 and/or the time for which the foldable substrate 707 can contact the salt solution 2403 may be within one or more of the ranges discussed above with reference to step 1509 . In some embodiments, chemically strengthening the foldable substrate 707 in step 1713 may include chemically strengthening the first surface region 423 to form a first compressive stress region extending from the first surface region 423 to the first compression depth, the chemically strengthening the first compressive stress region. Two surface regions 425 to form a second compressive stress region extending from the second surface region 425 to a second compression depth, and chemically strengthening the third surface region 433 to form a first region extending from the third surface region 433 to the third compression depth Three compressive stress regions, chemically strengthened fourth surface region 435 to form a fourth compressive stress region extending from fourth surface region 435 to a fourth compression depth, chemically strengthened first central surface region 709 to form from the first central surface region 709 a first central compressive stress region extending to the first central compression depth, and chemically strengthening the second central surface region 719 to form a second central compressive stress region extending from the second central surface region 719 to the second central compression depth . After step 1713, the foldable substrate may include one or more regions of compressive stress (eg, first, second, third, fourth, first central, and/or second central compressive stress regions), which are included above A compression depth and/or an associated layer depth within one or more ranges is discussed with respect to the corresponding compressive stress region. In another embodiment, one of the first layer depth, the second layer depth, the third layer depth, or the fourth layer depth is divided by the thickness of the substrate and the depth of the first center layer or the depth of the second center layer divided by the center thickness The absolute difference between can be within one or more of the ranges discussed above. In further embodiments, one of the first compression depth, the second compression depth, the third compression depth or the fourth compression depth is divided by the thickness of the substrate and the first central compression depth or the second central compression depth divided by the central thickness The absolute difference between can be within one or more of the ranges discussed above. In further embodiments, the absolute difference between the first average potassium concentration or the second average potassium concentration and the central average potassium concentration may be within one or more of the ranges discussed above.

在步驟1713後,第一過渡部分及/或第二過渡部分可包含包含過渡最大拉伸應力之一過渡拉伸應力區域。在一些實施例中,第一部分可包含包含第一最大拉伸應力之第一拉伸應力區域,第二部分可包含包含第一最大拉伸應力之第二拉伸應力區域,且中心部分可包含包含中心最大拉伸應力區域之中心拉伸應力區域。在另外實施例中,過渡最大拉伸應力可大於中心最大拉伸應力。在另外實施例中,過渡最大拉伸應力可大於第一最大拉伸應力及/或第二最大拉伸應力。舉例而言,在步驟1705及1707中之遮蔽第一過渡部分及/或第二過渡部分可防止移除對應的初始壓縮應力區域,此可使第一過渡部分及/或第二過渡部分能夠在步驟1713後包含比中心部分大之最大拉伸應力。同樣地,經由步驟1705及1707維持的第一過渡部分及/或第二過渡部分之初始壓縮應力區域,結合第一過渡部分及/或第二過渡部分相對於第一部分及/或第二部分之減小之厚度,可使過渡最大拉伸應力能夠大於第一最大拉伸應力及/或第二最大拉伸應力。提供大於中心最大拉伸應力之過渡最大拉伸應力可抵消在折疊期間在第一部分或第二部分與第一過渡部分及/或第二過渡部分之間的應變。提供大於第一最大拉伸應力及/或第二最大拉伸應力之過渡最大拉伸應力可抵消在折疊期間在中心部分與第一過渡部分及/或第二過渡部分之間的應變。After step 1713, the first transition portion and/or the second transition portion may include a transitional tensile stress region that includes a transitional maximum tensile stress. In some embodiments, the first portion can include a first region of tensile stress that includes a first maximum tensile stress, the second portion can include a second region of tensile stress that includes the first maximum tensile stress, and the center portion can include The central tensile stress region containing the central maximum tensile stress region. In further embodiments, the transition maximum tensile stress may be greater than the central maximum tensile stress. In further embodiments, the transition maximum tensile stress may be greater than the first maximum tensile stress and/or the second maximum tensile stress. For example, masking the first transition portion and/or the second transition portion in steps 1705 and 1707 may prevent removal of the corresponding initial compressive stress region, which may enable the first transition portion and/or the second transition portion to be After step 1713 a maximum tensile stress is included that is greater than the central portion. Likewise, the initial compressive stress region of the first transition portion and/or the second transition portion maintained through steps 1705 and 1707 is combined with the first transition portion and/or the second transition portion relative to the first portion and/or the second portion. The reduced thickness enables the transition maximum tensile stress to be greater than the first maximum tensile stress and/or the second maximum tensile stress. Providing a transition maximum tensile stress greater than the central maximum tensile stress may counteract the strain between the first or second portion and the first and/or second transition portion during folding. Providing a transition maximum tensile stress greater than the first maximum tensile stress and/or the second maximum tensile stress may counteract the strain between the central portion and the first transition portion and/or the second transition portion during folding.

在步驟1713後,本揭露內容之方法可繼續進行至步驟1715,包含在第一主表面403上及/或在第一凹座434中安置一塗層251。在一些實施例中,如在第47圖中針對可折疊基板407所展示,第二液體4703可安置於第一主表面403上。在另外實施例中,第二液體4703可安置於第一部分421之第一表面區423及第二部分431之第三表面區433上。在另外實施例中,第二液體4703可安置於第一中心表面區709上及/或填充第一凹座434。在另外實施例中,如所展示,可使用一容器4701(例如,管道、可撓性管、微量吸管或注射管)安置第二液體4703。在一些實施例中,第二液體4703可包含塗佈前驅物、溶劑、粒子、奈米粒子及/或纖維。在一些實施例中,塗佈前驅物可包含(不限於)單體、加速劑、固化劑、環氧樹脂及/或丙烯酸酯中之一或多者。在一些實施例中,用於黏著劑前驅物之溶劑可包含極性溶劑(例如,水、乙醇、醋酸酯、丙酮、甲酸、二甲基甲醯胺、乙腈、二甲基胺苯碸亞磺酸、硝基甲烷、丙烯碳酸酯、聚(醚醚酮))及/或非極性溶劑(例如,戊烷、1,4-二噁烷、氯仿、二氯甲烷、二乙醚、己烷、庚烷、苯、甲苯、二甲苯)。第二液體4703可經固化以形成一塗層251,如在第48圖至第49圖中展示。固化第二液體4703可包含加熱第二液體4703,藉由紫外線(UV)輻射輻照第二液體4703,及/或等候預定時間量(例如,自約30分鐘至24小時、自約1小時至約8小時)。在一些實施例中,可使用另一方法(例如,化學氣相沉積(chemical vapor deposition;CVD)(例如,低壓CVD、電漿增強型CVD)、物理氣相沉積(physical vapor deposition,PVD)(例如,蒸鍍、分子束磊晶、離子鍍敷)、原子層沉積(atomic layer deposition,ALD)、濺鍍、噴霧熱解、化學浴沉積、溶膠-凝膠沉積)來形成該塗層251。在一些實施例中,雖未展示,但塗層251可安置於第一凹座434中(例如,填充第一凹座434),而不接觸第一主表面403(例如,第一表面區423、第三表面區433)。After step 1713 , the method of the present disclosure may proceed to step 1715 including disposing a coating 251 on the first major surface 403 and/or in the first recess 434 . In some embodiments, as shown in FIG. 47 for the foldable substrate 407 , the second liquid 4703 may be disposed on the first major surface 403 . In other embodiments, the second liquid 4703 may be disposed on the first surface region 423 of the first portion 421 and the third surface region 433 of the second portion 431 . In other embodiments, the second liquid 4703 may be disposed on the first central surface region 709 and/or fill the first recess 434 . In further embodiments, as shown, a container 4701 (eg, tubing, flexible tubing, micropipette, or syringe) may be used to accommodate the second liquid 4703. In some embodiments, the second liquid 4703 may include coating precursors, solvents, particles, nanoparticles, and/or fibers. In some embodiments, the coating precursor may include, without limitation, one or more of monomers, accelerators, curing agents, epoxy resins, and/or acrylates. In some embodiments, the solvent used for the adhesive precursor may comprise a polar solvent (eg, water, ethanol, acetate, acetone, formic acid, dimethylformamide, acetonitrile, dimethylamine phenylsulfinic acid) , nitromethane, propylene carbonate, poly(ether ether ketone)) and/or non-polar solvents (e.g., pentane, 1,4-dioxane, chloroform, dichloromethane, diethyl ether, hexane, heptane , benzene, toluene, xylene). The second liquid 4703 can be cured to form a coating 251, as shown in FIGS. 48-49. Curing the second liquid 4703 can include heating the second liquid 4703, irradiating the second liquid 4703 with ultraviolet (UV) radiation, and/or waiting a predetermined amount of time (eg, from about 30 minutes to 24 hours, from about 1 hour to about 8 hours). In some embodiments, another method (eg, chemical vapor deposition (CVD) (eg, low pressure CVD, plasma enhanced CVD), physical vapor deposition (PVD) ( For example, evaporation, molecular beam epitaxy, ion plating), atomic layer deposition (ALD), sputtering, spray pyrolysis, chemical bath deposition, sol-gel deposition) to form the coating 251 . In some embodiments, although not shown, coating 251 may be disposed in first recess 434 (eg, fill first recess 434 ) without contacting first major surface 403 (eg, first surface region 423 ) , the third surface area 433).

在步驟1713或1715後,本揭露內容之方法可繼續進行至步驟1719,包含在第二凹座444中安置材料。在一些實施例中,如在第48圖中針對可折疊基板407所展示,第三液體4803可安置於第二凹座444中。在一些實施例中,第三液體4803可包含前驅物、溶劑、粒子、奈米粒子及/或纖維。在另外實施例中,如所展示,第三液體4803可自容器4801安置於第二凹座444中,但可使用其他方法在第二凹座中沉積第三液體或其他材料,如上關於第一凹座及/或第二液體所論述。在一些實施例中,第三液體4803可經固化(例如,加熱第三液體,輻照第三液體,等候指定時間量)以在第二凹座444中形成基於聚合物之部分241,如在第49圖中展示。在一些實施例中,雖未展示,但第三液體可經固化以形成安置於第二凹座244中之一黏著層,例如,類似於黏著層261。After step 1713 or 1715 , the method of the present disclosure may proceed to step 1719 , including placing material in the second recess 444 . In some embodiments, as shown in FIG. 48 for the foldable substrate 407 , the third liquid 4803 may be seated in the second recess 444 . In some embodiments, the third liquid 4803 may include precursors, solvents, particles, nanoparticles, and/or fibers. In further embodiments, as shown, the third liquid 4803 may be disposed in the second recess 444 from the container 4801, although other methods may be used to deposit the third liquid or other material in the second recess, as described above with respect to the first The dimples and/or the second liquid are discussed. In some embodiments, the third liquid 4803 can be cured (eg, heating the third liquid, irradiating the third liquid, waiting a specified amount of time) to form the polymer-based portion 241 in the second recess 444, as in Shown in Figure 49. In some embodiments, although not shown, the third liquid may be cured to form an adhesive layer disposed in the second recess 244 , eg, similar to the adhesive layer 261 .

在步驟1715或1717後,本揭露內容之方法可繼續進行至步驟1719,包含使用可折疊基板707來組裝可折疊設備。如在第49圖中參考可折疊基板407所展示,步驟1719可包含塗覆黏著層261以使第二主表面405之第二表面區425與第二主表面405之第四表面區435接觸。舉例而言,在一些實施例中,黏著層261可包含黏著劑材料之一或多個薄片。在一些實施例中,可存在包含安置於第二凹座(例如,基於聚合物之部分241)中之黏著層261及/或材料之一或多個薄片之間的整體界面,此可減少(例如,避免)當光在該等薄片之間行進時之光學繞射及/或光學不連續性,此係由於在一些實施例中,一或多個薄片可包括實質上相同之折射率。在一些實施例中,雖未展示,但黏著層之至少一部分可安置於第二凹座中。在一些實施例中,一離型襯裡(例如,見第2圖及第4圖中之離型襯裡271)或一顯示裝置(例如,見第3圖及第5圖中之顯示裝置307)可安置於黏著層261(例如,第一接觸表面263)上。在步驟1719後,根據製作可折疊設備的第17圖中之流程圖的本揭露內容之方法可在步驟1721處完成。After step 1715 or 1717, the method of the present disclosure may proceed to step 1719, including using the foldable substrate 707 to assemble a foldable device. As shown in FIG. 49 with reference to the foldable substrate 407 , step 1719 may include applying the adhesive layer 261 to bring the second surface region 425 of the second major surface 405 into contact with the fourth surface region 435 of the second major surface 405 . For example, in some embodiments, the adhesive layer 261 may comprise one or more sheets of adhesive material. In some embodiments, there may be an integral interface between one or more sheets comprising the adhesive layer 261 and/or material disposed in the second recess (eg, the polymer-based portion 241 ), which may reduce ( For example, avoid) optical diffraction and/or optical discontinuities as light travels between the flakes, since in some embodiments one or more flakes may comprise substantially the same refractive index. In some embodiments, although not shown, at least a portion of the adhesive layer may be disposed in the second recess. In some embodiments, a release liner (eg, see release liner 271 in Figures 2 and 4) or a display device (eg, see display device 307 in Figures 3 and 5) can be Disposed on the adhesive layer 261 (eg, the first contact surface 263 ). After step 1719 , the method of the present disclosure according to the flowchart of FIG. 17 of making a foldable device may be completed at step 1721 .

在一些實施例中,根據本揭露內容之實施例的製作一可折疊設備之方法可沿著第17圖中之流程圖之步驟1701、1703、1707、1709、1711、1713、1715、1717、1719及1721依序進行,如上所論述。在一些實施例中,如在第17圖中展示,箭頭1702可跟在步驟1701後,省略步驟1703,例如,當在步驟1701後可折疊基板707包含一或多個壓縮應力區域時。在另外實施例中,箭頭1708可跟在步驟1703後,至包含機械加工可折疊基板707之步驟1705,而非經由步驟1707、1709及1711化學蝕刻可折疊基板。在一些實施例中,箭頭1704可跟在步驟1701後,至步驟1707,例如,當在步驟1701後可折疊基板707包含一或多個壓縮應力區域時。在一些實施例中,箭頭1706可跟在步驟1701後,至包含化學強化可折疊基板之步驟1713,例如,當可折疊基板707已包含所要的凹座時。在一些實施例中,方法可沿著自步驟1713至步驟1717之箭頭1714,包含在第二凹座444中安置材料。在另外實施例中,方法可沿著自步驟1717至步驟1715之箭頭1716,包含在第一主表面上及/或在第一凹座434中安置一塗層251。在更另外實施例中,方法可沿著自步驟1715至步驟1719之箭頭1718,包含組裝可折疊設備,例如,若可折疊設備已包含塗層251或一基於聚合物之部分241,或另一材料待安置於一或多個凹座中。在一些實施例中,方法可沿著自步驟1715至步驟1721之箭頭1720,例如,若可折疊設備在步驟1715之結尾充分組裝,或若另一材料待安置於第一凹座中及/或第一主表面上,及/或第二主表面上。在一些實施例中,方法可沿著自步驟1717至步驟1721之箭頭1722,例如,若可折疊設備在步驟1717之結尾充分組裝,或若另一材料待安置於第二凹座中及/或第二主表面上。在一些實施例中,方法可沿著自步驟1713至步驟1721之箭頭1712,例如,若可折疊基板707係所要的產品(例如,在第一凹座或第二凹座中無材料)。以上選項中之任何者可經組合以製作根據本揭露內容之實施例的可折疊設備。In some embodiments, a method of making a foldable device according to embodiments of the present disclosure may follow steps 1701 , 1703 , 1707 , 1709 , 1711 , 1713 , 1715 , 1717 , 1719 of the flowchart in FIG. 17 and 1721 in sequence, as discussed above. In some embodiments, as shown in FIG. 17, arrow 1702 may follow step 1701, omitting step 1703, eg, when foldable substrate 707 includes one or more regions of compressive stress after step 1701. In another embodiment, arrow 1708 may follow step 1703 to step 1705 that includes machining the foldable substrate 707, rather than chemically etching the foldable substrate through steps 1707, 1709, and 1711. In some embodiments, arrow 1704 may follow step 1701 to step 1707 , eg, when the foldable substrate 707 includes one or more regions of compressive stress after step 1701 . In some embodiments, arrow 1706 may follow step 1701 to step 1713 of including chemically strengthened foldable substrate, eg, when foldable substrate 707 already includes the desired recesses. In some embodiments, the method may include placing material in the second recess 444 along arrow 1714 from step 1713 to step 1717 . In further embodiments, the method may include disposing a coating 251 on the first major surface and/or in the first recess 434 along arrow 1716 from step 1717 to step 1715 . In still further embodiments, the method may include assembling the foldable device, along arrow 1718 from step 1715 to step 1719, eg, if the foldable device already includes coating 251 or a polymer-based portion 241, or another The material is to be seated in one or more pockets. In some embodiments, the method may follow arrow 1720 from step 1715 to step 1721, eg, if the foldable device is fully assembled at the end of step 1715, or if another material is to be placed in the first recess and/or on the first major surface, and/or on the second major surface. In some embodiments, the method may follow arrow 1722 from step 1717 to step 1721, eg, if the foldable device is fully assembled at the end of step 1717, or if another material is to be placed in the second recess and/or on the second major surface. In some embodiments, the method may follow arrow 1712 from step 1713 to step 1721, eg, if the foldable substrate 707 is the desired product (eg, no material in the first pocket or the second pocket). Any of the above options can be combined to make a foldable device according to embodiments of the present disclosure.

現將參看第40圖至第49圖及第18圖中之流程圖來論述製作類似於在第8圖中圖示之可折疊設備801的可折疊設備之實例實施例。在本揭露內容之方法之第一步驟1801中,方法可開始於提供一可折疊基板4007。在一些實施例中,可藉由購買或以其他方式獲得基板或藉由形成可折疊基板來提供可折疊基板4007。在一些實施例中,可折疊基板4007可包含一基於玻璃之基板及/或一基於陶瓷之基板。在另外實施例中,基於玻璃之基板及/或基於陶瓷之基板可藉由以多種條帶形成製程(例如,槽拉、下拉、熔融下拉、上拉、壓滾、重拉或浮動)來形成其而提供。在另外實施例中,可藉由加熱基於玻璃之基板以使一或多個陶瓷晶體結晶來提供基於陶瓷之基板。可折疊基板4007可包含可沿著一平面延伸之一現有第二主表面4005(見第40圖)。現有第二主表面4005可與第一主表面4003相對。An example embodiment of making a foldable device similar to the foldable device 801 illustrated in FIG. 8 will now be discussed with reference to the flowcharts in FIGS. 40-49 and 18 . In a first step 1801 of the method of the present disclosure, the method may begin by providing a foldable substrate 4007 . In some embodiments, the foldable substrate 4007 may be provided by purchasing or otherwise obtaining the substrate or by forming a foldable substrate. In some embodiments, the foldable substrate 4007 may comprise a glass-based substrate and/or a ceramic-based substrate. In further embodiments, glass-based substrates and/or ceramic-based substrates may be formed by various strip-forming processes (eg, slot draw, draw down, fusion draw, pull up, roll, redraw, or float) it is provided. In further embodiments, the ceramic-based substrate may be provided by heating the glass-based substrate to crystallize one or more ceramic crystals. The foldable substrate 4007 can include an existing second major surface 4005 (see FIG. 40 ) that can extend along a plane. The existing second main surface 4005 may be opposite to the first main surface 4003 .

在一些實施例中,在步驟1801中,可折疊基板407可具備在可折疊基板4007之第一主表面4003中之一第一凹座834,其暴露在中心部分4081中的可折疊基板4007之現有第一中心表面區4009。在另外實施例中,雖未展示,但現有第一中心表面區4009可包含一過渡區域(例如,類似於過渡區域853及/或855)。在另外實施例中,第一凹座834可藉由蝕刻、雷射燒蝕或機械加工第一主表面4003來形成。舉例而言,機械加工可折疊基板4007可類似於以上論述之步驟1603。在一些實施例中,在步驟1801中,可折疊基板4007可具備一或多個初始壓縮應力區域,例如,具有以上參考步驟1605論述的性質中之一或多者。In some embodiments, in step 1801 , the foldable substrate 407 may be provided with a first recess 834 in the first major surface 4003 of the foldable substrate 4007 that is exposed between the foldable substrate 4007 in the central portion 4081 There is a first central surface area 4009. In further embodiments, although not shown, the existing first central surface region 4009 may include a transition region (eg, similar to transition regions 853 and/or 855). In other embodiments, the first recess 834 may be formed by etching, laser ablation, or machining the first major surface 4003 . For example, machining the foldable substrate 4007 can be similar to step 1603 discussed above. In some embodiments, in step 1801 , the foldable substrate 4007 may be provided with one or more regions of initial compressive stress, eg, having one or more of the properties discussed above with reference to step 1605 .

在步驟1801後,在一些實施例中,方法可繼續進行至步驟1803,包含機械加工現有第二主表面4005(見第41圖)。在一些實施例中,步驟1803可包含移除現有第二主表面4005之第一部分821,以顯露第一部分821之第二表面區825。在一些實施例中,步驟1803可包含移除現有第二主表面4005之第二部分831,以顯露第二部分831之第四表面區835。如在第41圖中展示,第二表面區825及/或第四表面區可包含一第二主表面805。如在第41圖中展示,沿著一平面4104延伸之現有第二主表面4005可經改質以顯露第二表面區825及/或第四表面區835。舉例而言,如在第26圖中參考可折疊基板404所展示,可使用金剛石雕刻,其中可使用電腦數值控制(computer numerical control;CNC)機器2003來控制金剛石尖探針2001。可將不同於金剛石之材料用於藉由CNC機器雕刻。應理解,可使用形成該(等)凹座之其他方法,例如,微影及雷射燒蝕。After step 1801, in some embodiments, the method may proceed to step 1803, including machining the existing second major surface 4005 (see FIG. 41). In some embodiments, step 1803 may include removing the first portion 821 of the existing second major surface 4005 to reveal the second surface region 825 of the first portion 821 . In some embodiments, step 1803 may include removing the second portion 831 of the existing second major surface 4005 to reveal the fourth surface region 835 of the second portion 831 . As shown in FIG. 41 , the second surface region 825 and/or the fourth surface region may include a second major surface 805 . As shown in FIG. 41 , the existing second major surface 4005 extending along a plane 4104 may be modified to reveal the second surface region 825 and/or the fourth surface region 835 . For example, as shown in Figure 26 with reference to the foldable substrate 404, diamond engraving may be used, wherein a computer numerical control (CNC) machine 2003 may be used to control the diamond tip probe 2001. Materials other than diamond can be used for engraving by CNC machines. It should be understood that other methods of forming the recess(s) may be used, such as lithography and laser ablation.

在步驟1801後,如在第40圖中展示,方法可繼續進行至步驟1805,包含在可折疊基板4007之一或多個部分上安置一遮罩。在另外實施例中,如所展示,步驟1805可包含將第一液體沉積物4011安置於中心部分4081中之現有第二主表面4005上。在另外實施例中,如所展示,可使用一容器3201來安置第一液體沉積物4011。在另外實施例中,第一液體沉積物4011可包含以上論述之第一液體2107。在另外實施例中,液體沉積物(例如,第40圖中展示之第一液體沉積物4011)可經固化以形成遮罩(例如,第41圖中展示之第一遮罩4103)。固化第一液體可包含將其加熱,藉由紫外線(UV)輻射將其輻照,及/或等候預定時間量。在另外實施例中,可使用如上論述之另一方法來形成遮罩。After step 1801 , as shown in FIG. 40 , the method may continue to step 1805 including disposing a mask on one or more portions of the foldable substrate 4007 . In further embodiments, as shown, step 1805 may include disposing the first liquid deposit 4011 on the existing second major surface 4005 in the central portion 4081 . In further embodiments, as shown, a container 3201 may be used to house the first liquid deposit 4011. In further embodiments, the first liquid deposit 4011 may comprise the first liquid 2107 discussed above. In further embodiments, the liquid deposit (eg, the first liquid deposit 4011 shown in FIG. 40 ) may be cured to form a mask (eg, the first mask 4103 shown in FIG. 41 ). Curing the first liquid may include heating it, irradiating it with ultraviolet (UV) radiation, and/or waiting a predetermined amount of time. In further embodiments, the mask may be formed using another method as discussed above.

在步驟1805後,方法可繼續進行至步驟1807,包含至少蝕刻可折疊基板4007之現有第二主表面4005。在另外實施例中,蝕刻可包含將可折疊基板4007曝露於一蝕刻劑(例如,一或多種無機酸)。在另外實施例中,如在第41圖中展示,蝕刻可包含蝕刻沿著平面4104延伸的現有第二主表面4005之第一部分821,以顯露第一部分821之第二表面區825。在另外實施例中,如在第41圖中展示,蝕刻可包含蝕刻沿著平面4104延伸的現有第二主表面4005之第二部分831,以顯露第二部分831之第四表面區835。在另外實施例中,如在第41圖中展示,藉由蝕刻顯露之第二表面區825及/或第四表面區835可包含一第二主表面805。After step 1805 , the method may continue to step 1807 including etching at least the existing second major surface 4005 of the foldable substrate 4007 . In further embodiments, etching can include exposing the foldable substrate 4007 to an etchant (eg, one or more inorganic acids). In further embodiments, as shown in FIG. 41 , the etching may include etching the first portion 821 of the existing second major surface 4005 extending along the plane 4104 to reveal the second surface region 825 of the first portion 821 . In further embodiments, as shown in FIG. 41 , the etching may include etching the second portion 831 of the existing second major surface 4005 extending along the plane 4104 to reveal the fourth surface region 835 of the second portion 831 . In further embodiments, as shown in FIG. 41 , the second surface region 825 and/or the fourth surface region 835 exposed by etching may include a second major surface 805 .

在步驟1807後,如在第41圖中展示,方法可繼續進行至步驟1809,包含移除遮罩4103。在一些實施例中,如所展示,移除遮罩4103可包含在跨表面(例如,中心部分4081中之現有第二主表面4005)之一方向4102上移動研磨工具4101。在更另外實施例中,使用該工具可包含掃掠、刮擦、研磨、推動等。在另外實施例中,遮罩4103可藉由用溶劑洗滌表面(例如,中心部分4081中之現有第二主表面4005)來移除。在一些實施例中,移除遮罩可包含自中心部分4081中之現有第二主表面4005移除遮罩4103。After step 1807 , as shown in FIG. 41 , the method may proceed to step 1809 , including removing mask 4103 . In some embodiments, as shown, removing the mask 4103 can include moving the abrasive tool 4101 in a direction 4102 across a surface (eg, the existing second major surface 4005 in the central portion 4081). In still further embodiments, using the tool may include sweeping, scraping, grinding, pushing, and the like. In further embodiments, the mask 4103 may be removed by washing the surface (eg, the existing second major surface 4005 in the central portion 4081) with a solvent. In some embodiments, removing the mask can include removing the mask 4103 from the existing second major surface 4005 in the central portion 4081 .

在步驟1803或1809後,如在第42圖中展示,方法可繼續進行至步驟1811,包含化學強化可折疊基板4007。在一些實施例中,如所展示,化學強化可折疊基板407可包含使包含鋰陽離子及/或鈉陽離子的可折疊基板4007之至少一部分與包含鹽溶液4203之一鹽浴4201接觸,該鹽溶液可包含以上參考步驟1509針對鹽溶液2403論述的組分中之一或多者。在一些實施例中,鹽溶液4203之溫度及/或可折疊基板4007可接觸鹽溶液100之時間可在以上參考步驟1509論述的範圍中之一或多者內。在一些實施例中,步驟1811中之化學強化可折疊基板4007可包含化學強化現有第一中心表面區4009以形成自現有第一中心表面區4009延伸至初始第一中心壓縮深度之一初始第一中心壓縮應力區域,化學強化第一表面區823以形成自第一表面區823延伸至初始第一壓縮深度之一初始第一壓縮應力區域,化學強化第三表面區833以形成自第三表面區833延伸至初始第三壓縮深度之一初始第三壓縮應力區域,化學強化第二表面區825以形成自第二表面區825延伸至初始第二壓縮深度之一初始第二壓縮應力區域,化學強化第四表面區835以形成自第四表面區835延伸至初始第四壓縮深度之一初始第四壓縮應力區域,及化學強化現有第二主表面4005以形成自現有第二主表面4005延伸至初始第二中心壓縮深度之一初始第二中心壓縮應力區域。After step 1803 or 1809 , as shown in FIG. 42 , the method may proceed to step 1811 including chemically strengthening the foldable substrate 4007 . In some embodiments, as shown, chemically strengthening the foldable substrate 407 can include contacting at least a portion of the foldable substrate 4007 comprising lithium cations and/or sodium cations with a salt bath 4201 comprising a salt solution 4203, the salt solution One or more of the components discussed above with reference to step 1509 for saline solution 2403 may be included. In some embodiments, the temperature of saline solution 4203 and/or the time for which foldable substrate 4007 can contact saline solution 100 may be within one or more of the ranges discussed above with reference to step 1509. In some embodiments, chemically strengthening the foldable substrate 4007 in step 1811 may include chemically strengthening the existing first central surface region 4009 to form an initial first one extending from the existing first central surface region 4009 to the initial first central compression depth Central compressive stress region, chemically strengthened first surface region 823 to form an initial first compressive stress region extending from first surface region 823 to an initial first compression depth, chemically strengthened third surface region 833 to form from third surface region 833 an initial third compressive stress region extending to an initial third compression depth, chemically strengthening the second surface region 825 to form an initial second compressive stress region extending from the second surface region 825 to an initial second compression depth, chemically strengthening the fourth surface region 835 to form an initial fourth compressive stress region extending from the fourth surface region 835 to the initial fourth compression depth, and chemically strengthening the existing second major surface 4005 to form an initial fourth compressive stress region extending from the existing second major surface 4005 to the initial An initial second central compressive stress region of the second central compressive depth.

在步驟1811後,可折疊基板4007可包含一或多個初始壓縮應力區域(例如,第一、第二、第三、第四、第一中心及/或第二中心壓縮應力區域),其包含一初始壓縮深度及/或一相關聯之初始層深度。在一些實施例中,作為基板厚度811之一百分比的初始第一壓縮深度、初始第二壓縮深度、初始第三壓縮深度及/或初始第四壓縮深度可為約5%或更大、10%或更大、約12%或更大、約14%或更大、約25%或更小、約20%或更小、約18%或更小或約16%或更小。在一些實施例中,作為基板厚度811之一百分比的初始第一壓縮深度、初始第二壓縮深度、初始第三壓縮深度及/或初始第四壓縮深度可在自約5%至約25%、自約8%至約25%、自約8%至約20%、自約10%至約20%、自約10%至約18%、自約12%至約18%、自約12%至約16%、自約14%至約16%之一範圍或其間之任一範圍或子範圍中。在一些實施例中,作為完工的可折疊基板4007之對應的壓縮深度之一百分比的初始第一壓縮深度、初始第二壓縮深度、初始第三壓縮深度及/或初始第四壓縮深度可為約50%或更大、60%或更大、約65%或更大、約68%或更大、約80%或更小、約75%或更小、或約72%或更小、或約70%或更小。在一些實施例中,作為完工的可折疊基板4007之對應的壓縮深度之一百分比的初始第一壓縮深度、初始第二壓縮深度、初始第三壓縮深度及/或初始第四壓縮深度可在自約50%至約80%、自約60%至約80%、自約60%至約75%、自約65%至約75%、自約65%至約72%、自約68%至約72%、自約68%至約70%之一範圍或其間之任一範圍或子範圍中。在一些實施例中,作為基板厚度811之一百分比的初始第一層深度、初始第二層深度、初始第三層深度及/或初始第四層深度可為約5%或更大、10%或更大、約12%或更大、約14%或更大、約25%或更小、約20%或更小、約18%或更小或約16%或更小。在一些實施例中,作為基板厚度811之一百分比的初始第一層深度、初始第二層深度、初始第三層深度及/或初始第四層深度可在自約5%至約25%、自約8%至約25%、自約8%至約20%、自約10%至約20%、自約10%至約18%、自約12%至約18%、自約12%至約16%、自約14%至約16%之一範圍或其間之任一範圍或子範圍中。在一些實施例中,作為完工的可折疊基板4007之對應的層深度之一百分比的初始第一層深度、初始第二層深度、初始第三層深度及/或初始第四層深度可為約50%或更大、60%或更大、約65%或更大、約68%或更大、約80%或更小、約75%或更小、或約72%或更小、或約70%或更小。在一些實施例中,作為完工的可折疊基板4007之對應的壓縮深度之一百分比的初始第一層深度、初始第二層深度、初始第三層深度及/或初始第四層深度可在自約50%至約80%、自約60%至約80%、自約60%至約75%、自約65%至約75%、自約65%至約72%、自約68%至約72%、自約68%至約70%之一範圍或其間之任一範圍或子範圍中。After step 1811, the foldable substrate 4007 may include one or more initial compressive stress regions (eg, first, second, third, fourth, first central, and/or second central compressive stress regions) including An initial compression depth and/or an associated initial layer depth. In some embodiments, the initial first depth of compression, the initial second depth of compression, the initial third depth of compression, and/or the initial fourth depth of compression as a percentage of substrate thickness 811 may be about 5% or more, 10% or greater, about 12% or greater, about 14% or greater, about 25% or less, about 20% or less, about 18% or less, or about 16% or less. In some embodiments, the initial first depth of compression, the initial second depth of compression, the initial third depth of compression, and/or the initial fourth depth of compression as a percentage of substrate thickness 811 may be from about 5% to about 25%, from about 8% to about 25%, from about 8% to about 20%, from about 10% to about 20%, from about 10% to about 18%, from about 12% to about 18%, from about 12% to In a range of about 16%, from about 14% to about 16%, or any range or subrange therebetween. In some embodiments, the initial first compression depth, the initial second compression depth, the initial third compression depth, and/or the initial fourth compression depth as a percentage of the corresponding compression depth of the finished foldable substrate 4007 may be about 50% or more, 60% or more, about 65% or more, about 68% or more, about 80% or less, about 75% or less, or about 72% or less, or about 70% or less. In some embodiments, the initial first compression depth, the initial second compression depth, the initial third compression depth, and/or the initial fourth compression depth as a percentage of the corresponding compression depth of the finished foldable substrate 4007 may be about 50% to about 80%, from about 60% to about 80%, from about 60% to about 75%, from about 65% to about 75%, from about 65% to about 72%, from about 68% to about 72%, a range from about 68% to about 70%, or any range or subrange therebetween. In some embodiments, the initial first layer depth, initial second layer depth, initial third layer depth, and/or initial fourth layer depth as a percentage of substrate thickness 811 may be about 5% or greater, 10% or greater, about 12% or greater, about 14% or greater, about 25% or less, about 20% or less, about 18% or less, or about 16% or less. In some embodiments, the initial first layer depth, initial second layer depth, initial third layer depth, and/or initial fourth layer depth as a percentage of substrate thickness 811 may be from about 5% to about 25%, from about 8% to about 25%, from about 8% to about 20%, from about 10% to about 20%, from about 10% to about 18%, from about 12% to about 18%, from about 12% to In a range of about 16%, from about 14% to about 16%, or any range or subrange therebetween. In some embodiments, the initial first layer depth, initial second layer depth, initial third layer depth, and/or initial fourth layer depth as a percentage of the corresponding layer depths of the finished foldable substrate 4007 may be about 50% or more, 60% or more, about 65% or more, about 68% or more, about 80% or less, about 75% or less, or about 72% or less, or about 70% or less. In some embodiments, the initial first layer depth, initial second layer depth, initial third layer depth, and/or initial fourth layer depth as a percentage of the corresponding compression depth of the finished foldable substrate 4007 may be about 50% to about 80%, from about 60% to about 80%, from about 60% to about 75%, from about 65% to about 75%, from about 65% to about 72%, from about 68% to about 72%, a range from about 68% to about 70%, or any range or subrange therebetween.

在一些實施例中,如在第42圖中展示,在步驟1811後(例如,在步驟1815中之蝕刻可折疊基板4007前),包含現有第二主表面4005之現有第二中心表面區可自第二主表面805突出。如上論述,第二表面區825及第四表面區835可包含第二主表面805。在另外實施例中,包含現有第二主表面4005之現有第二中心表面區自第二主表面805突出的距離可實質上等於或大於在步驟1811中產生的初始第二中心壓縮深度。In some embodiments, as shown in FIG. 42, after step 1811 (eg, before etching the foldable substrate 4007 in step 1815), the existing second central surface region including the existing second major surface 4005 may be free from The second main surface 805 protrudes. As discussed above, the second surface region 825 and the fourth surface region 835 may include the second major surface 805 . In further embodiments, the distance by which the existing second central surface region including the existing second major surface 4005 protrudes from the second major surface 805 may be substantially equal to or greater than the initial second central compression depth produced in step 1811 .

在步驟1811後,如在第43圖至第44圖中展示,方法可繼續進行至步驟1813,包含在可折疊基板4007上安置遮罩。在一些實施例中,如在第43圖中展示,步驟1813可包含在第二表面區825上安置第一液體沉積物4303,及在第四表面區835上安置第二液體沉積物4305。在另外實施例中,如所展示,可使用容器3201(例如,管道、可撓性管、微量吸管或注射管)安置包含第一液體沉積物4303及第二液體沉積物4305之液體。在另外實施例中,雖未展示,但第三液體沉積物可安置於第一表面區823上,及/或第四液體沉積物可安置於第二表面區825上。在另外實施例中,液體沉積物(例如,第一液體沉積物4303、第二液體沉積物4305)可經固化以形成遮罩(例如,第44圖中展示之第二遮罩4405及/或第四遮罩4409)。固化液體沉積物可包含將其加熱,藉由紫外線(UV)輻射將其輻照,及/或等候預定時間量。在另外實施例中,可使用如上論述之另一方法來形成遮罩。如在第44圖中展示,步驟1813可導致安置於第一表面區823上之第一遮罩4407、安置於第二表面區825之第二遮罩4405、安置於第三表面區833上之第三遮罩4411及安置於第四表面區835上之第四遮罩4409。After step 1811 , as shown in FIGS. 43-44 , the method may continue to step 1813 including disposing a mask on the foldable substrate 4007 . In some embodiments, as shown in FIG. 43 , step 1813 may include disposing the first liquid deposit 4303 on the second surface area 825 and disposing the second liquid deposit 4305 on the fourth surface area 835 . In further embodiments, as shown, a container 3201 (eg, a tube, flexible tube, micropipette, or syringe) may be used to house the liquid comprising the first liquid deposit 4303 and the second liquid deposit 4305. In further embodiments, although not shown, a third liquid deposit can be disposed on the first surface region 823 and/or a fourth liquid deposit can be disposed on the second surface region 825 . In further embodiments, the liquid deposits (eg, first liquid deposit 4303, second liquid deposit 4305) may be cured to form a mask (eg, second mask 4405 shown in FIG. 44 and/or fourth mask 4409). Curing the liquid deposit may include heating it, irradiating it with ultraviolet (UV) radiation, and/or waiting a predetermined amount of time. In further embodiments, the mask may be formed using another method as discussed above. As shown in FIG. 44, step 1813 may result in a first mask 4407 disposed over the first surface region 823, a second mask 4405 disposed over the second surface region 825, a second mask 4405 disposed over the third surface region 833 The third mask 4411 and the fourth mask 4409 disposed on the fourth surface area 835.

在步驟1813後,如在第44圖中展示,方法可繼續進行至步驟1815,包含蝕刻可折疊基板4007。在另外實施例中,如所展示,蝕刻溶液4403可為蝕刻劑浴4401中含有之液體蝕刻劑。在更另外實施例中,蝕刻溶液4403可包含一或多種無機酸(例如,HCl、HF、H2 SO4 、HNO3 )。在一些實施例中,如所展示,蝕刻可包含蝕刻沿著平面4104延伸的現有第二主表面4005之中心部分4081以形成一第二中心表面區819。在另外實施例中,如所展示,第二中心表面區819可與第二主表面825及/或第四主表面835共面。在一些實施例中,如所展示,蝕刻可包含蝕刻包含現有第一中心表面區4009(見第42圖)(例如,沿著另一平面4406延伸)之中心部分881以顯露一第二中心表面區4509。在一些實施例中,經移除以顯露第一中心表面區之材料深度可實質上等於、小於或大於初始第一中心壓縮深度。在一些實施例中,經移除以顯露第二中心表面區之材料深度可實質上等於、小於或大於初始第二中心壓縮深度。After step 1813 , as shown in FIG. 44 , the method may proceed to step 1815 , including etching the foldable substrate 4007 . In further embodiments, as shown, etching solution 4403 may be a liquid etchant contained in etchant bath 4401 . In still further embodiments, the etching solution 4403 may include one or more inorganic acids (eg, HCl, HF , H2SO4 , HNO3 ). In some embodiments, as shown, etching can include etching a central portion 4081 of the existing second major surface 4005 extending along plane 4104 to form a second central surface region 819 . In further embodiments, as shown, the second central surface region 819 may be coplanar with the second major surface 825 and/or the fourth major surface 835 . In some embodiments, as shown, the etching can include etching a central portion 881 including the existing first central surface region 4009 (see FIG. 42 ) (eg, extending along another plane 4406 ) to reveal a second central surface District 4509. In some embodiments, the depth of material removed to reveal the first central surface region may be substantially equal to, less than, or greater than the original first central compression depth. In some embodiments, the depth of material removed to reveal the second central surface region may be substantially equal to, less than, or greater than the original second central compression depth.

在步驟1815後,如在第45圖中展示,本揭露內容之方法可繼續進行至步驟1817,包含移除該(等)遮罩。在一些實施例中,如所展示,移除該(等)遮罩(例如,第四遮罩4409)可包含在跨表面(例如,第四表面區835)之一方向4502上移動研磨工具4501。在更另外實施例中,使用該工具可包含掃掠、刮擦、研磨、推動等。在另外實施例中,該(等)遮罩可藉由用溶劑洗滌可折疊基板之表面來移除。在一些實施例中,如所展示,移除該(等)遮罩可包含自第一表面區823移除第一遮罩4407、自第二表面區825移除第二遮罩4405、自第三表面區833移除第三遮罩4411及/或自第四表面區移除第四遮罩4409(例如,藉由研磨工具4501)。After step 1815, as shown in FIG. 45, the method of the present disclosure may proceed to step 1817, including removing the mask(s). In some embodiments, as shown, removing the mask(s) (eg, fourth mask 4409 ) may include moving abrasive tool 4501 in a direction 4502 across the surface (eg, fourth surface region 835 ) . In still further embodiments, using the tool may include sweeping, scraping, grinding, pushing, and the like. In further embodiments, the mask(s) can be removed by washing the surface of the foldable substrate with a solvent. In some embodiments, as shown, removing the mask(s) may include removing the first mask 4407 from the first surface region 823, removing the second mask 4405 from the second surface region 825, removing the second mask 4405 from the second surface region 825, The third mask 4411 is removed from the three surface regions 833 and/or the fourth mask 4409 is removed from the fourth surface region (eg, by the grinding tool 4501).

在步驟1817後,本揭露內容之方法可繼續進行至步驟1819,包含進一步化學強化可折疊基板807。在一些實施例中,如在第46圖中展示,在步驟1817中進一步化學強化可折疊基板4007可與以上論述的在步驟1605、1615或1811中之化學強化類似或相同。在一些實施例中,如在第46圖中展示,步驟1817可包含使包含鋰陽離子及/或鈉陽離子的可折疊基板4007之至少一部分與包含鹽溶液4603之一鹽浴4601接觸,該鹽溶液包含以上關於步驟1811、1615或1509論述的鹼金屬離子及/或含鹼金屬之化合物中之一或多者。在一些實施例中,鹽溶液4603可包含在以上關於步驟1811、1615或1509論述的範圍中之一或多者內之一溫度。在步驟1819後,可折疊基板4007可包含一或多個壓縮應力區域(例如,第一、第二、第三、第四、第一中心及/或第二中心壓縮應力區域),該等壓縮應力區域包含在以上關於對應的壓縮應力區域論述之一或多個範圍內的壓縮深度及/或相關聯之層深度,該等深度可進一步包含以上論述之任何及/或所有關係(例如,作為基板厚度之一百分比的距第一表面區、第二表面區、第三表面區及/或第四表面區之壓縮深度及/或層深度與作為中心厚度之一百分比的距第一中心表面區及/或第二中心表面區之對應深度之間的絕對差)。After step 1817 , the method of the present disclosure may proceed to step 1819 , including further chemically strengthening the foldable substrate 807 . In some embodiments, as shown in Figure 46, further chemical strengthening of the foldable substrate 4007 in step 1817 may be similar or identical to the chemical strengthening in steps 1605, 1615, or 1811 discussed above. In some embodiments, as shown in FIG. 46, step 1817 may include contacting at least a portion of the foldable substrate 4007 comprising lithium cations and/or sodium cations with a salt bath 4601 comprising a salt solution 4603, the salt solution Include one or more of the alkali metal ions and/or alkali metal containing compounds discussed above with respect to steps 1811, 1615 or 1509. In some embodiments, the salt solution 4603 may comprise a temperature within one or more of the ranges discussed above with respect to steps 1811 , 1615 or 1509 . After step 1819, the foldable substrate 4007 may include one or more regions of compressive stress (eg, first, second, third, fourth, first central, and/or second central regions of compressive stress) that compress Stress regions include compression depths and/or associated layer depths within one or more of the ranges discussed above with respect to corresponding compressive stress regions, which depths may further include any and/or all relationships discussed above (eg, as Compression depth and/or layer depth from the first surface region, second surface region, third surface region and/or fourth surface region as a percentage of the substrate thickness and from the first central surface region as a percentage of the center thickness and/or the absolute difference between the corresponding depths of the second central surface area).

在步驟1819後,本揭露內容之方法可繼續進行至步驟1821,包含在第一主表面803上及/或在第一凹座834中安置材料(例如,塗層251、基於聚合物之部分241、黏著層261)。在一些實施例中,安置該塗層可與以上論述之步驟1713或1715相同或實質上類似。After step 1819 , the methods of the present disclosure may proceed to step 1821 , including disposing material (eg, coating 251 , polymer-based portion 241 , on first major surface 803 and/or in first recess 834 ) , adhesive layer 261). In some embodiments, placing the coating may be the same as or substantially similar to steps 1713 or 1715 discussed above.

在步驟1817或1819後,本揭露內容之方法可繼續進行至步驟1821,包含使用可折疊基板4007來組裝可折疊設備。步驟1821可包含塗覆黏著層以接觸可折疊基板之第一主表面或第二主表面。另外,步驟1821可包含在黏著層上安置一離型襯裡(例如,見第2圖及第4圖中之離型襯裡271)或一顯示裝置(例如,見第3圖及第5圖中之顯示裝置307)。在步驟1821之後,根據製作可折疊設備的第18圖中之流程圖的本揭露內容之方法可在步驟1823處完成。After step 1817 or 1819, the method of the present disclosure may proceed to step 1821, including using the foldable substrate 4007 to assemble the foldable device. Step 1821 may include applying an adhesive layer to contact the first major surface or the second major surface of the foldable substrate. Additionally, step 1821 may include disposing a release liner (eg, see release liner 271 in Figures 2 and 4) or a display device (eg, see Figures 3 and 5) on the adhesive layer display device 307). Following step 1821 , the method of the present disclosure according to the flowchart in FIG. 18 of making a foldable device may be completed at step 1823 .

在一些實施例中,根據本揭露內容之實施例的製作一可折疊設備之方法可沿著第18圖中之流程圖之步驟1801、1805、1807、1809、1811、1813、1815、1817、1819、1821、1823及1825依序進行,如上所論述。在一些實施例中,如在第18圖中展示,箭頭1802可跟在步驟1801後,至步驟1803,包含機械加工可折疊基板以自第一主表面之中心部分移除材料。在一些實施例中,箭頭1804可跟在步驟1801後,至步驟1804,例如,若可折疊基板在步驟1801之結尾已包含一第一凹座。在一些實施例中,方法可沿著自步驟1821至步驟1821之箭頭1812,例如,若可折疊設備在步驟1821之結尾充分組裝,或若另一材料待安置於第二凹座中及/或第二主表面上。在一些實施例中,方法可沿著自步驟1819至步驟1825之箭頭1808,例如,若可折疊基板4007係所要的產品(例如,在第一凹座或第二凹座中無材料)。以上選項中之任何者可經組合以製作根據本揭露內容之實施例的可折疊設備。 實例In some embodiments, a method of making a foldable device according to embodiments of the present disclosure may follow steps 1801 , 1805 , 1807 , 1809 , 1811 , 1813 , 1815 , 1817 , 1819 of the flowchart in FIG. 18 , 1821, 1823, and 1825 are performed sequentially, as discussed above. In some embodiments, as shown in Figure 18, arrow 1802 may follow step 1801, to step 1803, including machining the foldable substrate to remove material from the central portion of the first major surface. In some embodiments, arrow 1804 may follow step 1801 to step 1804 , eg, if the foldable substrate already includes a first recess at the end of step 1801 . In some embodiments, the method may follow arrow 1812 from step 1821 to step 1821, eg, if the foldable device is fully assembled at the end of step 1821, or if another material is to be placed in the second recess and/or on the second major surface. In some embodiments, the method may follow arrow 1808 from step 1819 to step 1825, eg, if foldable substrate 4007 is the desired product (eg, no material in first or second recess). Any of the above options can be combined to make a foldable device according to embodiments of the present disclosure. example

將藉由以下實例進一步澄清各種實施例。實例A至C演示用於形成包含在第4圖至第5圖及第7圖至第8圖中展示之可折疊基板407或801之可折疊設備401、501、701或801的本揭露內容之實施例之實例方法。在實例D至E之第一凹座中的材料之應變、在實例D至E之第一中心表面區處的應變及折疊實例D至E之力圖示於第55圖至第57圖中。基於數值模擬之平面外翹曲示意性展示於針對實例F至G之第58圖至第59圖中。The various embodiments will be further clarified by the following examples. Examples A-C demonstrate a method of the present disclosure for forming a foldable device 401 , 501 , 701 or 801 including a foldable substrate 407 or 801 shown in FIGS. 4-5 and 7-8 Example Methods of Embodiments. The strain of the material in the first pocket of Examples D-E, the strain at the first central surface region of Examples D-E, and the force of folding Examples D-E are shown in FIGS. 55-57. Out-of-plane warping based on numerical simulations is shown schematically in Figures 58-59 for Examples F-G.

在表1中,第一部分及第二部分之厚度、中心部分之厚度、第一部分及第二部分之平均層深度(average depth of layer;DOL)及中心部分之平均層深度(average depth of layer;DOL)係針對實例A至C在圖示方法之不同階段呈現。 表1:實例A至C之性質 實例 初始 第一化學強化 蝕刻中心部分 第二化學強化 第一/第二 中心 第一/第二 中心 第一/第二 中心 第一/第二 中心   A t(µm) 100 58 100 58 100 30 100 30 DOL(µm) 0 0 14 14 14 0 20 6 B t(µm) 150 78 150 78 150 30 150 30   DOL(µm) 0 0 24 24 24 0 30 6   C t(µm) 200 98 200 98 200 30 200 30 DOL(µm) 0 0 34 34 34 0 40 6 In Table 1, the thickness of the first part and the second part, the thickness of the central part, the average depth of layer (DOL) of the first part and the second part, and the average depth of layer of the central part; DOL) are presented at different stages of the illustrated method for Examples A-C. Table 1: Properties of Examples A to C example initial first chemical strengthening Etch the center part Second chemical strengthening First second center First second center First second center First second center A t (µm) 100 58 100 58 100 30 100 30 DOL (µm) 0 0 14 14 14 0 20 6 B t (µm) 150 78 150 78 150 30 150 30 DOL (µm) 0 0 twenty four twenty four twenty four 0 30 6 C t (µm) 200 98 200 98 200 30 200 30 DOL (µm) 0 0 34 34 34 0 40 6

實例A一開始包含一基於玻璃之基板,該基板包含100 µm之基板厚度(例如,第一厚度、第二厚度)及58 µm之中心厚度。在第一化學強化製程中,自所有表面產生14 µm之實質上均勻層深度(depth of layer;DOL)。接著,蝕刻中心部分自現有第一中心表面區移除14 µm且自第二現有第二表面區移除14 µm,此實質上自彼等表面移除全部DOL以產生30 µm之中心厚度,同時保持第一部分及第二部分原樣。在第二化學強化製程中,所有表面經充分強化以針對第一中心表面區及第二中心表面區產生6 µm之DOL,所述製程亦將第一部分及第二部分中的表面之DOL增大6 µm。總體上,此製程產生包含20 µm(100 µm基板厚度之20%)之DOL的第一部分及第二部分,及包含6 µm(30 µm中心厚度之20%)之DOL的中心部分。Example A initially included a glass-based substrate comprising a substrate thickness (eg, first thickness, second thickness) of 100 μm and a center thickness of 58 μm. In the first chemical strengthening process, a substantially uniform depth of layer (DOL) of 14 μm was produced from all surfaces. Next, the central portion was etched to remove 14 µm from the existing first central surface region and 14 µm from the second existing second surface region, which essentially removed the entire DOL from those surfaces to yield a central thickness of 30 µm, while Leave the first and second parts as they are. In the second chemical strengthening process, all surfaces were sufficiently strengthened to produce 6 µm DOL for the first and second central surface regions, which also increased the DOL of the surfaces in the first and second portions 6 µm. Overall, this process produces a first and second portion comprising a DOL of 20 µm (20% of a 100 µm substrate thickness), and a center portion comprising a DOL of 6 µm (20% of a 30 µm center thickness).

實例B一開始包含一基於玻璃之基板,該基板包含100 µm之基板厚度(例如,第一厚度、第二厚度)及78 µm之中心厚度。在第一化學強化製程中,自所有表面產生24 µm之實質上均勻層深度(depth of layer;DOL)。接著,蝕刻中心部分自現有第一中心表面區移除24 µm且自第二現有第二表面區移除24 µm,此實質上自彼等表面移除全部DOL以產生30 µm之中心厚度,同時保持第一部分及第二部分原樣。在第二化學強化製程中,所有表面經充分強化以針對第一中心表面區及第二中心表面區產生6 µm之DOL,所述製程亦將第一部分及第二部分中的表面之DOL增大6 µm。總體上,此製程產生包含30 µm(150 µm基板厚度之20%)之DOL的第一部分及第二部分,及包含6 µm(30 µm中心厚度之20%)之DOL的中心部分。Example B initially included a glass-based substrate comprising a substrate thickness (eg, first thickness, second thickness) of 100 μm and a center thickness of 78 μm. In the first chemical strengthening process, a substantially uniform depth of layer (DOL) of 24 μm was produced from all surfaces. Next, the central portion was etched to remove 24 µm from the existing first central surface region and 24 µm from the second existing second surface region, which essentially removed the entire DOL from those surfaces to yield a central thickness of 30 µm, while Leave the first and second parts as they are. In the second chemical strengthening process, all surfaces were sufficiently strengthened to produce 6 µm DOL for the first and second central surface regions, which also increased the DOL of the surfaces in the first and second portions 6 µm. Overall, this process produces a first and second portion comprising a DOL of 30 µm (20% of the 150 µm substrate thickness), and a center portion comprising a DOL of 6 µm (20% of the 30 µm center thickness).

實例C一開始包含一基於玻璃之基板,該基板包含200 µm之基板厚度(例如,第一厚度、第二厚度)及98 µm之中心厚度。在第一化學強化製程中,自所有表面產生34 µm之實質上均勻層深度(depth of layer;DOL)。接著,蝕刻中心部分自現有第一中心表面區移除34 µm且自第二現有第二表面區移除34 µm,此實質上自彼等表面移除全部DOL以產生30 µm之中心厚度,同時保持第一部分及第二部分原樣。在第二化學強化製程中,所有表面經充分強化以針對第一中心表面區及第二中心表面區產生6 µm之DOL,所述製程亦將第一部分及第二部分中的表面之DOL增大6 µm。總體上,此製程產生包含40 µm(200 µm基板厚度之20%)之DOL的第一部分及第二部分,及包含6 µm(30 µm中心厚度之20%)之DOL的中心部分。Example C initially included a glass-based substrate comprising a substrate thickness (eg, first thickness, second thickness) of 200 μm and a center thickness of 98 μm. In the first chemical strengthening process, a substantially uniform depth of layer (DOL) of 34 μm was produced from all surfaces. Next, the central portion was etched to remove 34 µm from the existing first central surface region and 34 µm from the second existing second surface region, which essentially removed the entire DOL from those surfaces to yield a central thickness of 30 µm, while Leave the first and second parts as they are. In the second chemical strengthening process, all surfaces were sufficiently strengthened to produce 6 µm DOL for the first and second central surface regions, which also increased the DOL of the surfaces in the first and second portions 6 µm. Overall, this process produces a first and second portion comprising a DOL of 40 µm (20% of the 200 µm substrate thickness), and a center portion comprising a DOL of 6 µm (20% of the 30 µm center thickness).

實例A至C演示達成作為基板厚度之一百分比的第一部分之平均層深度(例如,第一層深度、第二層深度)及/或第二部分之平均層深度(例如,第三層深度、第四層深度),其可實質上等於作為針對不同基板厚度的中心厚度之一百分比的中心部分之平均層深度(例如,第一中心層深度、第二中心層深度)。在實例A至C中,第一化學強化製程達成基板厚度之14%之DOL(最終DOL之70%),接著自中心部分之每一表面蝕刻DOL,且最終使用另一經化學強化之製程來達成最終DOL。應理解,可使用類似方法來生成作為對應厚度之一百分比的不同基板厚度、不同中心厚度及不同DOL之可折疊基板。Examples A-C demonstrate achieving the average layer depth of the first portion (eg, the first layer depth, the second layer depth) and/or the average layer depth of the second portion as a percentage of the substrate thickness (eg, the third layer depth, fourth layer depth), which may be substantially equal to the average layer depth of the center portion as a percentage of the center thickness for different substrate thicknesses (eg, first center layer depth, second center layer depth). In Examples A-C, a first chemical strengthening process achieves a DOL of 14% of the substrate thickness (70% of the final DOL), then the DOL is etched from each surface of the central portion, and finally another chemically strengthened process is used to achieve Final DOL. It should be understood that similar methods can be used to generate foldable substrates of different substrate thicknesses, different center thicknesses, and different DOLs as a percentage of the corresponding thicknesses.

實例D至E包含一基於玻璃之基板(組成1具有以莫耳%計之一標稱組成:63.6 SiO2 ;15.7 Al2 O3 ;10.8 Na2 O;6.2 Li2 O;1.16 ZnO;0.04 SnO2 ;及2.5 P2 O5 ),150 µm之基板厚度、30 µm之中心厚度及20 mm之中心部分之寬度,無任何過渡部分。實例D包含一第一凹座,其具有自第一主表面凹進去120 µm之一第一中心表面區,而無與第一凹座相對之第二凹座。實例E包含具有自第一主表面凹進去60 µm之一第一中心表面區的一第一凹座及與該第一凹座相對之一第二凹座,其中第二中心表面區自第二主表面凹進去60 µm。Examples D-E included a glass-based substrate (Composition 1 had a nominal composition in mol% of: 63.6 SiO2 ; 15.7 Al2O3 ; 10.8 Na2O; 6.2 Li2O ; 1.16 ZnO; 0.04 SnO 2 ; and 2.5 P 2 O 5 ), substrate thickness of 150 µm, center thickness of 30 µm and width of center section of 20 mm, without any transitions. Example D includes a first recess having a first central surface area recessed 120 μm from the first major surface and no second recess opposite the first recess. Example E includes a first recess having a first central surface region recessed 60 μm from the first major surface and a second recess opposite the first recess, wherein the second central surface region is The main surface is recessed by 60 µm.

在第55圖中,水平軸5501(例如,x軸)為平行板距離(以mm計),且垂直軸5503(例如,y軸)為定位於第一凹座中的材料(例如,基於聚合物之部分、黏著劑材料、塗層)上之應變。實例D之結果由曲線5505展示,且實例E之結果由曲線5507展示。如所展示,對於展示之所有平行板距離,包含一單一第一凹座之實例D在定位於第一凹座中之材料上具有比包含第一凹座及第二凹座兩者的實例E之對應材料大的應變。實際上,實例E之應變為實例D之應變之約一半。In Figure 55, the horizontal axis 5501 (eg, the x-axis) is the parallel plate distance (in mm), and the vertical axis 5503 (eg, the y-axis) is the material positioned in the first pocket (eg, based on polymer parts, adhesive materials, coatings). The results of Example D are shown by curve 5505 and the results of Example E are shown by curve 5507. As shown, for all parallel plate distances shown, Example D, which includes a single first pocket, has a higher percentage of material positioned in the first pocket than Example E, which includes both the first pocket and the second pocket. which corresponds to a large strain of the material. In fact, the strain of Example E was about half of the strain of Example D.

在第56圖中,水平軸5601(例如,x軸)為平行板距離(以mm計),且垂直軸5603(例如,y軸)為第一中心表面區上之應變。實例D之結果由曲線5605展示,且實例E之結果由曲線5607展示。如所展示,對於展示之所有平行板距離,包含單一第一凹座之實例D在第一中心表面區上具有比包含第一凹座及第二凹座兩者的實例E之對應第一中心表面區大的應變。實際上,對於大於至少12 mm之平行板距離,實例E之應變為實例D之應變之約一半。In Figure 56, the horizontal axis 5601 (eg, the x-axis) is the parallel plate distance (in mm), and the vertical axis 5603 (eg, the y-axis) is the strain on the first central surface region. The results of Example D are shown by curve 5605 and the results of Example E are shown by curve 5607. As shown, for all parallel plate distances shown, Example D including a single first recess has a greater first center on the first central surface area than Example E including both the first and second recesses Large strains in the surface area. In fact, the strain of Example E was about half that of Example D for parallel plate distances greater than at least 12 mm.

在第57圖中,水平軸5701(例如,x軸)為平行板距離(以mm計),且垂直軸5703(例如,y軸)為折疊可折疊基板至一給定平行板距離之力(以牛頓(N)計)。實例D之結果由曲線5705展示,且實例E之結果由曲線5707展示。如展示,折疊實例D至約10 mm或更小之平行板的力比折疊實例E至相同平行板距離之對應力大。In Figure 57, the horizontal axis 5701 (eg, the x-axis) is the parallel-panel distance (in mm), and the vertical axis 5703 (eg, the y-axis) is the force to fold the foldable substrate to a given parallel-panel distance ( in Newtons (N). The results of Example D are shown by curve 5705 and the results of Example E are shown by curve 5707. As shown, the force to fold Example D to a parallel plate of about 10 mm or less is greater than the corresponding stress to fold Example E to the same parallel plate distance.

第55圖至第57圖演示使用相互相對之兩個凹座,而非一單一凹座,可將定位於凹座中之材料上的應變減小約一半,將可折疊基板(例如,第一中心表面區)上之應變減小約一半,且減小彎曲可折疊基板之力。Figures 55-57 demonstrate that the use of two pockets opposite each other, rather than a single pocket, reduces the strain on the material positioned in the pockets by about half, reducing the foldable substrate (eg, the first The strain on the central surface area) is reduced by about half and the force to bend the foldable substrate is reduced.

第58圖至第59圖示意性展示基於實例F至G之數值模擬的可折疊設備之平面外變形。實例F至G皆包含150 µm之基板厚度、30 µm之中心厚度,且中心部分之寬度包含20 mm。在實例F中,第二中心表面區與第二主表面共面,而第一中心表面區自第一主表面凹進去120 µm。相比之下,在實例G中,第一中心表面區自第一主表面凹進去65 µm,且第二中心表面區自第二主表面凹進去65 µm。在實例F至G中,第一部分及第二部分包含21520 × 10-7-1 之人工熱膨脹係數,而中心部分包含4300 × 10-7-1 之人工熱膨脹係數,且將可折疊基板自第一部分、第二部分及中心部分包含所敘述尺寸之溫度加熱1℃。如本文中使用,人工熱膨脹係數等於0.461、網路擴張係數、在一表面處與在該塊體中的一或多個鹼金屬離子之濃度之差與距表面的壓縮應力區域之層深度除以對應厚度之乘積。Figures 58-59 schematically show out-of-plane deformations of foldable devices based on the numerical simulations of Examples F-G. Examples F to G all included a substrate thickness of 150 μm, a center thickness of 30 μm, and the width of the center portion included 20 mm. In Example F, the second central surface region is coplanar with the second major surface, and the first central surface region is recessed 120 μm from the first major surface. In contrast, in Example G, the first central surface region was recessed 65 μm from the first major surface, and the second central surface region was recessed 65 μm from the second major surface. In Examples F to G, the first part and the second part include an artificial thermal expansion coefficient of 21520 × 10 -7 °C -1 , and the center section includes an artificial thermal expansion coefficient of 4300 × 10 -7 °C -1 , and the foldable substrate is The first part, the second part and the center part were heated 1°C to the temperature containing the stated dimensions. As used herein, the artificial thermal expansion coefficient is equal to 0.461, the network expansion coefficient, the difference between the concentration of one or more alkali metal ions at a surface and in the bulk, and the layer depth from the compressive stress region from the surface divided by Corresponds to the product of thickness.

並不希望受到理論約束,自實例F至G中之人工熱膨脹係數之差遇到之機械不穩定性可對應於基於自化學強化可折疊基板產生的在不同部分中之不同壓縮深度及/或層深度之差異膨脹產生的機械不穩定性。舉例而言,實例F至G中之人工熱膨脹係數之差可對應於作為基板厚度之一百分比的第一部分及/或第二部分之層深度(例如,第一層深度、第二層深度、第三層深度、第四層深度)與約23%(對於700 × 10-6 /莫耳%之網路擴張係數且每一部分之表面與塊體之間的20莫耳%之濃度差、933 × 10-6 /莫耳%之網路擴張係數且每一部分之表面與塊體之間的15莫耳%之濃度差或1400 × 10-6 /莫耳%之網路擴張係數且每一部分之表面與塊體之間的10莫耳%之濃度差)的作為中心厚度之一百分比的中心部分之層深度(例如,第一中心層深度、第二中心層深度)之間的差。舉例而言,實例F至G中之人工熱膨脹係數之差可對應於第一最大拉伸應力及/或第二最大拉伸應力與約140 MPa之中心最大拉伸應力之間的差(當每一部分包含0.22之泊松比及71 GPa之彈性模數時)。舉例而言,實例F至G中之人工熱膨脹係數之差可對應於第一部分及/或第二部分之最大壓縮應力(例如,第一最大壓縮應力、第二最大壓縮應力、第三最大壓縮應力、第四最大壓縮應力)與約140 MPa之中心部分之最大壓縮應力(例如,第一中心最大壓縮應力、第二最大壓縮應力)之間的差,每一部分包含0.22之泊松比及71 GPa之彈性模數。Without wishing to be bound by theory, the mechanical instabilities encountered from the differences in artificial thermal expansion coefficients in Examples F to G may correspond to different compression depths and/or layers in different sections based on self-chemically strengthened foldable substrates Mechanical instability due to differential expansion of depth. For example, the difference in artificial thermal expansion coefficients in Examples F-G may correspond to the layer depths of the first and/or second portions as a percentage of the substrate thickness (eg, first layer depth, second layer depth, The third layer depth, the fourth layer depth) and about 23% (for a network expansion coefficient of 700 × 10 -6 /mol % and a concentration difference of 20 mol % between the surface of each part and the block, 933 × A net expansion coefficient of 10 -6 /mol % and a concentration difference of 15 mol % between the surface of each section and the block or a net expansion coefficient of 1400 × 10 -6 /mol % and the surface of each section The difference between the layer depths (eg, first center layer depth, second center layer depth) of the center portion as a percentage of the center thickness from the 10 mol% concentration difference between the blocks. For example, the difference in artificial thermal expansion coefficients in Examples F-G may correspond to the difference between the first maximum tensile stress and/or the second maximum tensile stress and the central maximum tensile stress of about 140 MPa (when each Some include a Poisson's ratio of 0.22 and an elastic modulus of 71 GPa). For example, the difference in artificial thermal expansion coefficients in Examples F-G may correspond to the maximum compressive stress of the first portion and/or the second portion (eg, first maximum compressive stress, second maximum compressive stress, third maximum compressive stress , the fourth maximum compressive stress) and the maximum compressive stress of the central portion of approximately 140 MPa (eg, the first central maximum compressive stress, the second maximum compressive stress), each portion containing a Poisson's ratio of 0.22 and 71 GPa modulus of elasticity.

在展示實例F之第58圖中,中心部分居中,且包含大致對應於區域5811之最寬部分的一寬度。區域5805對應於最大正變形(例如,約80 µm),且主要定位於中心部分及鄰近部分中的可折疊基板之頂部及底部邊緣處。在頂部及底部,區域5807鄰近區域5805,且區域5807對應於比區域5805稍小的正變形。區域5809鄰近區域5807,且區域5809對應於負變形(例如,約-450 µm)。In Figure 58, which shows Example F, the central portion is centered and includes a width that generally corresponds to the widest portion of region 5811. Region 5805 corresponds to the largest positive deformation (eg, about 80 μm) and is located primarily at the top and bottom edges of the foldable substrate in the central portion and adjacent portions. At the top and bottom, region 5807 is adjacent to region 5805, and region 5807 corresponds to a slightly smaller positive deformation than region 5805. Region 5809 is adjacent to region 5807, and region 5809 corresponds to a negative deformation (eg, about -450 µm).

相比之下,區域5821對應於最大負變形(例如,約-850 µm),且沿著中心部分之中心線定位。區域5823鄰近包含更適度負變形(例如,約-350 µm)之區域5815。中心部分包含大致帶狀區段,自頂部至底部包含區域5805、5815、5811、5813、5815、5823、5815、5823、5815、5813、5815、5815及5805。實際上,此等帶與區域5815每隔一個帶交替,其中其餘帶朝向包含區域5823的第58圖之中間。區域5813對應於在區域5809與區域5815之負變形中間的負變形。區域5817鄰近帶狀區域(例如,區域5815及5823)之中心,且對應於極限值小於區域5823之負變形(例如,約-700 µm)。定位於右邊緣及左邊緣之區域5819對應於極限值小於區域5817之負變形(例如,約-600 µm)。In contrast, region 5821 corresponds to the largest negative deformation (eg, about -850 µm) and is located along the centerline of the central portion. Region 5823 is adjacent to region 5815 containing a more moderate negative deformation (eg, about -350 μm). The central portion includes a generally ribbon-like section, including regions 5805, 5815, 5811, 5813, 5815, 5823, 5815, 5823, 5815, 5813, 5815, 5815, and 5805 from top to bottom. In effect, these bands alternate with every other band of region 5815, with the remaining bands toward the middle of Figure 58 containing region 5823. Region 5813 corresponds to the negative deformation intermediate the negative deformations of region 5809 and region 5815. Region 5817 is adjacent to the center of the banded regions (eg, regions 5815 and 5823) and corresponds to negative deformations (eg, about -700 μm) with a limit less than region 5823. Regions 5819 located at the right and left edges correspond to negative deformations with a limit less than region 5817 (eg, about -600 μm).

在展示實例G之第59圖中,中心部分居中且包含大致對應於區域5905之最寬部分的一寬度。區域5907對應於最大正變形(例如,小於1皮米),其比在實例F之第58圖中遇到之正變形小至少6個數量級。區域5905鄰近對應於小於區域5905之正變形的區域5909。區域5909鄰近對應於大致無變形之區域5911。沿著中心部分之中心線定位的區域5905對應於在區域5911與區域5909中間的變形。定位於左邊緣及右邊緣處之區域5917對應於最大負變形(例如,小於-1皮米),其比在實例F之第58圖中遇到之負變形小至少6個數量級。區域5917鄰近對應於小於區域5917之負變形的區域5915。區域5913定位於區域5911與5915之間,且區域5913對應於區域5911與5915之變形中間的變形。In Figure 59, which shows Example G, the central portion is centered and includes a width that corresponds approximately to the widest portion of region 5905. Region 5907 corresponds to the largest positive deformation (eg, less than 1 picometer), which is at least 6 orders of magnitude smaller than the positive deformation encountered in Figure 58 of Example F. Region 5905 is adjacent to region 5909 that corresponds to a smaller positive deformation than region 5905. Region 5909 is adjacent to region 5911 which corresponds to substantially no deformation. Region 5905 located along the centerline of the central portion corresponds to the deformation intermediate region 5911 and region 5909. Regions 5917 located at the left and right edges correspond to the largest negative deformation (eg, less than -1 picometer), which is at least 6 orders of magnitude smaller than the negative deformation encountered in Figure 58 of Example F. Region 5917 is adjacent to region 5915 that corresponds to a less negative deformation than region 5917. Region 5913 is positioned between regions 5911 and 5915, and region 5913 corresponds to a deformation intermediate the deformations of regions 5911 and 5915.

基於在第58圖至第59圖中呈現的實例F至G之結果,包含自第一主表面及第二主表面兩者凹進去之一中心部分的實例G展現比對於實例F遇到之變形小至少10個數量級之變形。另外,定位中心部分使得第一中心表面區自第一主表面凹進去之第一距離實質上等於第二中心表面區自第二主表面凹進去之第二距離(如在實例G中)進一步減小變形。Based on the results of Examples F-G presented in Figures 58-59, Example G, which includes a central portion recessed from both the first and second major surfaces, exhibits deformations greater than those encountered for Example F A deformation that is at least 10 orders of magnitude smaller. Additionally, the central portion is positioned such that the first distance that the first central surface region is recessed from the first major surface is substantially equal to the second distance that the second central surface region is recessed from the second major surface (as in Example G) further minus small deformation.

可組合以上觀測以提供包含低有效最小彎曲半徑、高抗衝擊性、低閉合力、增加之耐久性及減少之疲勞的可折疊基板。該等部分可包含基於玻璃之部分及/或基於陶瓷之部分,其可提供良好尺寸穩定性、減少發生機械不穩定性、良好抗衝擊性及/或良好抗刺紮性。該第一部分及/或該第二部分可包含基於玻璃之部分及/或基於陶瓷之部分,其包含一或多個壓縮應力區域,此可進一步提供增大之抗衝擊性及/或增大之抗刺紮性。藉由提供包含一基於玻璃之基板及/或基於陶瓷之基板的一基板,該基板亦可提供增大之抗衝擊性及/或抗刺紮性,同時有助於良好折疊效能。在一些實施例中,基板厚度可足夠大(例如,自約80微米(micrometer)(微米(micron)或µm)至約2毫米),以進一步增強抗衝擊性及抗刺紮性。提供包含一中心部分(包含小於一基板厚度(例如,第一部分之第一厚度及/或第二部分之第二厚度)之一中心厚度)之可折疊基板可基於該中心部分中的減小之厚度實現小的有效最小彎曲半徑(例如,約10毫米或更小)。The above observations can be combined to provide a foldable substrate that includes a low effective minimum bend radius, high impact resistance, low closing force, increased durability, and reduced fatigue. Such portions may include glass-based portions and/or ceramic-based portions, which may provide good dimensional stability, reduced occurrence of mechanical instability, good impact resistance, and/or good puncture resistance. The first portion and/or the second portion may include a glass-based portion and/or a ceramic-based portion that includes one or more regions of compressive stress, which may further provide increased impact resistance and/or increased Puncture resistance. By providing a substrate comprising a glass-based substrate and/or a ceramic-based substrate, the substrate may also provide increased impact resistance and/or puncture resistance while contributing to good folding performance. In some embodiments, the substrate thickness may be sufficiently large (eg, from about 80 micrometers (microns or μm) to about 2 millimeters) to further enhance impact and puncture resistance. Providing a foldable substrate that includes a central portion including a central thickness that is less than a substrate thickness (eg, the first thickness of the first portion and/or the second thickness of the second portion) can be based on a reduction in the central portion. The thickness enables a small effective minimum bend radius (eg, about 10 mm or less).

在一些實施例中,該可折疊設備及/或可折疊基板可包含複數個凹座,例如,自一第一主表面凹進一第一距離之一第一中心表面區及自一第二主表面凹進一第二距離之一第二中心表面區。提供與一第二凹座相對之一第一凹座可提供小於一基板厚度之中心厚度。另外,提供與一第二凹座相對之一第一凹座可減小該可折疊設備的一最大彎曲誘發之應變,例如,在中心部分與第一部分及/或第二部分之間,此係由於包含中心厚度之中心部分可比在僅提供單一凹座之情況靠近可折疊設備及/或可折疊基板之一中性軸。另外,提供實質上等於第二距離之第一距離可減少在中心部分中的機械不穩定性之發生,例如,因為可折疊基板關於包含基板厚度及中心厚度之一中點的一平面對稱。此外,與具有按第一距離與第二距離之總和凹進之一表面的一單一凹座相比,提供與一第二凹座相對之一第一凹座可減小定位於該第一凹座及/或該第二凹座中的材料之彎曲誘發應變。提供定位於該第一凹座及/或該第二凹座中的材料之減小之彎曲誘發應變可實現對更寬泛材料範圍之使用,此係由於對材料的減少之應變要求。舉例而言,較硬及/或較剛性材料可定位於第一凹座中,此可改良可折疊設備之抗衝擊性、抗刺紮性、耐磨性及/或耐刮擦性。另外,控制定位於第一凹座中的第一材料及定位於第二凹座中的第二材料之性質可控制可折疊設備及/或可折疊基板之中性軸之位置,此可減少(例如,減輕、消除)機械不穩定性、設備疲勞及/或設備故障之發生。在一些實施例中,可折疊設備及/或可折疊基板可包含將中心部分附接至第一部分之一第一過渡部分及/或將中心部分附接至第二部分之一第二過渡部分。提供具有連續增大厚度之過渡區域可減小過渡區域中之應力集中,及/或避免光學失真。提供足夠長度之過渡區域(例如,約1 mm或更大)可避免可另外自可折疊基板之厚度之突然、階狀改變存在的光學失真。提供足夠小長度之過渡區域(例如,約5 mm或更小)可減少具有中間厚度的可折疊設備及/或可折疊基板之量,該可折疊設備及/或該等可折疊基板可具有減小之抗衝擊性及/或減小之抗刺紮性。另外,提供具有張應力區域之第一過渡區域及/或第二過渡區域可抵消在折疊期間在第一部分或第二部分與第一過渡部分及/或第二過渡部分之間的應變,該張應力區域包含大於中心部分之中心張應力區域之最大張應力的最大張應力。另外,提供具有張應力區域之第一過渡區域及/或第二過渡區域可抵消在折疊期間在中心部分與第一過渡部分及/或第二過渡部分之間的應變,該張應力區域包含大於第一部分之第一張應力區域及/或第二部分之第二張應力區域之最大張應力的最大張應力。In some embodiments, the foldable device and/or foldable substrate may include a plurality of recesses, eg, a first central surface area recessed a first distance from a first major surface and from a second major surface A second central surface area is recessed a second distance. Providing a first recess opposite a second recess can provide a center thickness less than a substrate thickness. Additionally, providing a first recess opposite a second recess may reduce a maximum bending-induced strain of the foldable device, eg, between the central portion and the first and/or second portion, which is Since the central portion including the central thickness can be closer to a neutral axis of the foldable device and/or foldable substrate than if only a single recess were provided. Additionally, providing the first distance substantially equal to the second distance can reduce the occurrence of mechanical instabilities in the central portion, eg, because the foldable substrate is symmetric about a plane that includes a midpoint of the substrate thickness and the central thickness. Furthermore, providing a first recess opposite a second recess may reduce positioning at the first recess compared to a single recess having a surface recessed by the sum of the first and second distances Bending induced strain in the seat and/or the material in the second recess. Providing a reduced bending induced strain of the material positioned in the first pocket and/or the second pocket enables the use of a wider range of materials due to the reduced strain requirements on the material. For example, a harder and/or more rigid material can be positioned in the first recess, which can improve impact resistance, puncture resistance, abrasion resistance, and/or scratch resistance of the foldable device. Additionally, controlling the properties of the first material positioned in the first pocket and the second material positioned in the second pocket can control the position of the neutral axis of the foldable device and/or foldable substrate, which can reduce ( For example, reduce, eliminate) the occurrence of mechanical instability, equipment fatigue and/or equipment failure. In some embodiments, the foldable device and/or foldable substrate may include a first transition portion attaching the central portion to a first portion and/or a second transition portion attaching the central portion to a second portion. Providing a transition region with a continuously increasing thickness can reduce stress concentrations in the transition region, and/or avoid optical distortion. Providing transition regions of sufficient length (eg, about 1 mm or more) can avoid optical distortions that might otherwise exist from abrupt, stepped changes in the thickness of the foldable substrate. Providing transition regions of sufficiently small length (eg, about 5 mm or less) can reduce the amount of foldable devices and/or foldable substrates having intermediate thicknesses that can have reduced Small impact resistance and/or reduced puncture resistance. Additionally, providing the first transition region and/or the second transition region with regions of tensile stress may counteract the strain between the first or second portion and the first and/or second transition portion during folding, the tension The stress region contains a maximum tensile stress greater than the maximum tensile stress of the central tensile stress region of the central portion. Additionally, providing the first transition region and/or the second transition region with a region of tensile stress may counteract the strain between the central portion and the first transition portion and/or the second transition portion during folding, the region of tensile stress comprising greater than The maximum tensile stress of the maximum tensile stress of the first tensile stress region of the first portion and/or the second tensile stress region of the second portion.

本揭露內容之實施例之設備及方法可藉由控制(例如,限制、減小、等化)作為化學強化之結果的可折疊設備及/或可折疊基板之不同部分之膨脹之間的差來減少(例如,減輕、消除)機械不穩定性、設備疲勞及/或設備故障之發生。控制不同部分之膨脹之間的差可減小可折疊設備及/或可折疊基板之部分之間的化學強化誘發應變,此可有助於在可折疊設備及/或可折疊基板達到臨界挫曲應變(例如,機械不穩定性之開始)前之更大折疊誘發應變。另外,減小機械不穩定性及/或核心層與第一外層及/或第一外層之間的差或中心部分與第一部分及/或第二部分之間的差可減少光學失真,例如,由因此(等)差在可折疊設備及/或可折疊基板內之應變造成。The devices and methods of embodiments of the present disclosure may be achieved by controlling (eg, limiting, reducing, equalizing) the difference between the expansion of different portions of the foldable device and/or foldable substrate as a result of chemical strengthening Reduce (eg, mitigate, eliminate) the occurrence of mechanical instability, equipment fatigue and/or equipment failure. Controlling the difference between the expansions of the different parts can reduce chemical strengthening induced strains between parts of the foldable device and/or foldable substrate, which can help to reach critical buckling at the foldable device and/or foldable substrate Greater folding induces strain prior to strain (eg, the onset of mechanical instability). Additionally, reducing mechanical instabilities and/or the difference between the core layer and the first outer layer and/or the first outer layer or the difference between the central portion and the first portion and/or the second portion may reduce optical distortion, eg, Caused by the (etc.) difference in strain within the foldable device and/or the foldable substrate.

在一些實施例中,提供包含一層壓件之一可折疊設備及/或可折疊基板可實現對在一單一化學強化製程中在第一部分、第二部分及中心部分之間的膨脹差之控制。舉例而言,核心層相對於第一外層及/或第二外層之性質可實現可折疊設備及/或可折疊基板之實質上均勻膨脹。在一些實施例中,核心層之密度可大於第一外層及/或第二外層之密度。在一些實施例中,核心層之熱膨脹係數可大於第一外層及/或第二外層之熱膨脹係數。在一些實施例中,核心層之網路擴張係數可小於第一外層及/或第二外層之網路擴張係數。另外,提供具有與第一外層及/或第二外層之關係的一核心層可減小(例如,最小化)折疊可折疊設備及/或可折疊基板之力。In some embodiments, providing a foldable device and/or foldable substrate comprising a laminate may enable control of the differential expansion between the first portion, the second portion and the central portion in a single chemical strengthening process. For example, the properties of the core layer relative to the first outer layer and/or the second outer layer may enable substantially uniform expansion of the foldable device and/or foldable substrate. In some embodiments, the density of the core layer may be greater than the density of the first outer layer and/or the second outer layer. In some embodiments, the thermal expansion coefficient of the core layer may be greater than the thermal expansion coefficient of the first outer layer and/or the second outer layer. In some embodiments, the network expansion coefficient of the core layer may be smaller than the network expansion coefficient of the first outer layer and/or the second outer layer. Additionally, providing a core layer in relationship to the first outer layer and/or the second outer layer may reduce (eg, minimize) the force of folding the foldable device and/or the foldable substrate.

作為化學強化之結果,與中心部分相比,提供包含靠近(例如,在基於氧化物的百萬分之100、百萬分之10內)中心部分之一或多種鹼金屬之濃度的一或多種鹼金屬之平均濃度的一第一部分及/或一第二部分可最小化第一部分及/或第二部分之膨脹差。實質上均勻膨脹可減少作為化學強化之結果的機械變形及/或機械不穩定性之發生。作為化學強化之結果,與中心部分相比,提供靠近(例如,在0.5%內、在0.1%內、在0.01%內)中心部分之對應比率的層深度對第一部分及/或第二部分之厚度的一比率可最小化第一部分及/或第二部分之近表面膨脹之差。將近表面膨脹之差最小化可減小第一主表面、第二主表面、第一中心表面區及/或第二中心表面區之一平面中的應力及/或應變,此可進一步減少作為化學強化之結果的機械變形及/或機械不穩定性之發生。提供靠近(例如,在1%內、在0.5%內、在0.1%內)中心部分之對應比率的壓縮深度對第一部分及/或第二部分之厚度的一比率可最小化第一部分及/或第二部分相對於中心部分的化學強化誘發應變之間的差。將化學強化誘發應變之差最小化可減少作為化學強化之結果的機械變形及/或機械不穩定性之發生。將第一主表面、第二主表面、第一中心表面區及/或第二中心表面區中之應力及/或應變最小化可減少應力誘發之光學失真。又,將此等應力最小化可增大抗刺紮性及/或抗衝擊性。又,將此等應力最小化可與沿著一中心線的低光學阻滯差(例如,約2奈米或更小)相關聯。另外,將此等應力最小化可減少作為化學強化之結果的機械變形及/或機械不穩定性之發生。As a result of chemical strengthening, providing one or more compounds comprising a concentration of one or more alkali metals near (eg, within 100 ppm, 10 ppm on an oxide basis) of the central portion compared to the central portion A first portion and/or a second portion of the average concentration of alkali metal can minimize the differential expansion of the first portion and/or the second portion. Substantially uniform expansion reduces the occurrence of mechanical deformation and/or mechanical instability as a result of chemical strengthening. As a result of chemical strengthening, providing a corresponding ratio of depth of layer to the first and/or second portion close to (eg, within 0.5%, within 0.1%, within 0.01%) of the center portion compared to the center portion A ratio of thicknesses can minimize the difference in near-surface expansion of the first portion and/or the second portion. Minimizing the difference in near-surface expansion can reduce stress and/or strain in one of the planes of the first major surface, the second major surface, the first central surface region, and/or the second central surface region, which can further reduce as a chemical The occurrence of mechanical deformation and/or mechanical instability as a result of strengthening. Providing a ratio of the depth of compression to the thickness of the first portion and/or the second portion near (eg, within 1%, within 0.5%, within 0.1%) of the corresponding ratio of the central portion can minimize the first portion and/or The difference between the chemical strengthening induced strain of the second part relative to the central part. Minimizing the difference in chemical strengthening induced strain can reduce the occurrence of mechanical deformation and/or mechanical instability as a result of chemical strengthening. Minimizing stress and/or strain in the first major surface, the second major surface, the first central surface region, and/or the second central surface region can reduce stress-induced optical distortion. Also, minimizing these stresses may increase puncture resistance and/or impact resistance. Also, minimizing these stresses can be associated with low optical retardation differences (eg, about 2 nanometers or less) along a centerline. Additionally, minimizing these stresses may reduce the occurrence of mechanical deformation and/or mechanical instability as a result of chemical strengthening.

本揭露內容之方法可實現製作包含以上提到之益處中之一或多者的可折疊基板。在一些實施例中,本揭露內容之方法可在一單一化學強化步驟中達成以上提到之益處,例如,製作包含一層壓件之一可折疊基板,此可減少與生產可折疊基板相關聯之時間、裝備、空間及勞動成本。在一些實施例中,可在可折疊基板之任何化學強化前提供或形成現有凹座(例如,自第一主表面凹進之現有第一中心表面區、自第二主表面凹進之現有第二中心表面區),此可提供針對具有比可以其他方式達成之凹座深的凹座(例如,更大第一距離、更大第二距離)之可折疊設備之以上益處。在一些實施例中,可藉由以下步驟來提供以上益處:化學強化可折疊基板,蝕刻可折疊基板之中心部分(例如,蝕刻一現有第一中心表面區以形成形成一新第一中心表面區、蝕刻一現有第二中心表面區以形成形成一新第二中心表面區),及接著進一步化學強化該可折疊基板。在另外實施例中,可藉由控制相對於該進一步化學強化之第二時間週期控制該化學強化之一時間週期及/或自中心部分蝕刻之一厚度來提供以上益處。提供該進一步化學強化該可折疊基板可達成較大壓縮應力,而不會遇到機械變形及/或機械不穩定性,且較大壓縮應力可進一步增大可折疊基板之抗衝擊性及/或抗刺紮性。The methods of the present disclosure may enable the fabrication of foldable substrates that include one or more of the above-mentioned benefits. In some embodiments, the methods of the present disclosure can achieve the above-mentioned benefits in a single chemical strengthening step, eg, fabricating a foldable substrate comprising a laminate, which can reduce the labor associated with producing the foldable substrate Time, equipment, space and labor costs. In some embodiments, existing recesses may be provided or formed prior to any chemical strengthening of the foldable substrate (eg, existing first central surface region recessed from the first major surface, existing first central surface region recessed from the second major surface two central surface areas), which may provide the above benefits for foldable devices with deeper pockets (eg, larger first distance, larger second distance) than pockets that could otherwise be achieved. In some embodiments, the above benefits may be provided by chemically strengthening the foldable substrate, etching a central portion of the foldable substrate (eg, etching an existing first central surface region to form a new first central surface region) , etching an existing second central surface region to form a new second central surface region), and then further chemically strengthening the foldable substrate. In further embodiments, the above benefits may be provided by controlling a time period of the chemical strengthening relative to a second time period of the further chemical strengthening and/or a thickness etched from the central portion. Providing the further chemical strengthening of the foldable substrate can achieve greater compressive stress without encountering mechanical deformation and/or mechanical instability, and the greater compressive stress can further increase the impact resistance of the foldable substrate and/or Puncture resistance.

如本文中使用之方向術語(例如,上、下、右、左、前、後、頂部、底部)僅係參看如所繪製之該等圖進行,且不意欲暗示絕對定向。Directional terms (eg, top, bottom, right, left, front, back, top, bottom) as used herein are made only with reference to the figures as drawn, and are not intended to imply absolute orientation.

應瞭解,各種揭露之實施例可涉及結合彼實施例描述之特徵、元件或步驟。亦應瞭解,一特徵、元件或步驟雖然關於一個實施例來描述,但可與替代實施例按各種未圖示之組合或排列來互換或組合。It should be understood that various disclosed embodiments may involve the features, elements or steps described in connection with that embodiment. It should also be understood that a feature, element or step, although described in relation to one embodiment, may be interchanged or combined with alternative embodiments in various combinations or permutations not shown.

亦應理解,如本文中使用,術語「該」、「一(a或an)」意謂「至少一個」,且不應限於「僅一個」,除非明確地有相反指示。舉例而言,對「一組件」之參考包含具有兩個或更多個此等組件之實施例,除非上下文另有清晰指示。同樣地,「複數個」意欲表示「多於一個」。It will also be understood that, as used herein, the terms "the", "an (a or an)" mean "at least one" and should not be limited to "only one" unless expressly indicated to the contrary. For example, reference to "an element" includes embodiments having two or more of such elements, unless the context clearly dictates otherwise. Likewise, "plurality" is intended to mean "more than one".

如本文中所使用,術語「約」意謂數量、大小、配方、參數及其他量及特性並不且不需要準確,而可按需要為近似值及/或較大或較小,反映公差、轉換因數、捨入、量測誤差及類似者及熟習此項技術者已知之其他因素。本文中可將範圍表達為自「約」一個特定值及/或至「約」另一特定值。在表達此範圍時,實施例包括自該一個特定值及/或至另一特定值。類似地,當將值表達為近似值時,藉由使用先行詞「約」,應理解,該特定值形成另一實施例。不管是否將說明書中的一範圍之一數值或端點敘述為「約」,一範圍之該數值或端點皆意欲包括兩個實施例:由「約」修飾之實施例,及不由「約」修飾之實施例。應進一步理解,該等範圍中之每一者之端點關於另一端點及獨立於另一端點皆為有效的。As used herein, the term "about" means that quantities, sizes, formulations, parameters and other quantities and characteristics are not and need not be exact, but can be approximate and/or greater or lesser as desired, reflecting tolerances, conversions Factors, rounding, measurement errors and the like and other factors known to those skilled in the art. Ranges can be expressed herein as from "about" one particular value and/or to "about" another particular value. When expressing such ranges, embodiments include from that one particular value and/or to another particular value. Similarly, when values are expressed as approximations, by use of the antecedent "about," it will be understood that the particular value forms another embodiment. Whether or not a value or endpoint in a range is stated as "about" in the specification, the value or endpoint of a range is intended to include two embodiments: the embodiment modified by "about" and the embodiment not modified by "about" Modified Example. It will be further understood that the endpoint of each of these ranges is valid with respect to and independent of the other endpoint.

如本文中使用之術語「實質上(substantial、substantially)」及其變型意欲指出,一描述之特徵等於或大致等於一值或描述。舉例而言,一「實質上平坦」表面意欲表示平坦或大致平坦之一表面。此外,如上所定義,「實質上類似」意欲表示兩個值相等或大致相等。在一些實施例中,「實質上類似」可表示在彼此之約10%內的值,例如,在彼此之約5%內,或在彼此之約2%內。As used herein, the terms "substantial, substantially" and variations thereof are intended to indicate that a described feature is equal to or approximately equal to a value or description. For example, a "substantially flat" surface is intended to mean a surface that is flat or substantially flat. Also, as defined above, "substantially similar" is intended to mean that two values are equal or approximately equal. In some embodiments, "substantially similar" can mean values within about 10% of each other, eg, within about 5% of each other, or within about 2% of each other.

除非另有明確陳述,否則決不意欲將本文中闡述之任何方法解釋為需要按一具體次序來執行其步驟。因此,在一方法請求項不實際敘述跟著其步驟之一次序或不在申請專利範圍或描述中另外具體陳述該等步驟應限於一具體次序之情況下,決不意欲推斷任一特定次序。Unless expressly stated otherwise, any method set forth herein is in no way intended to be construed as requiring a specific order for performing its steps. Thus, where a method claim does not actually recite an order of steps followed or otherwise specifically state in the claims or description that the steps should be limited to a specific order, no particular order is intended in any way.

雖然特定實施例之各種特徵、元件或步驟可使用過渡片語「包含」來揭露,但應理解,暗示替代性實施例,包括可使用過渡片語「組成」或「基本上由……組成」描述之實施例。因此,舉例而言,對包含A + B + C之一設備的暗示之替代性實施例包括設備由A + B + C組成之實施例及設備基本上由A + B + C組成之實施例。如本文中使用,術語「包含」及「包括」及其變化應被解釋為同義且開放式的,除非另有指示。Although various features, elements, or steps of particular embodiments may be disclosed using the transitional phrase "comprising", it should be understood that alternative embodiments are implied, including the use of the transitional phrase "consisting of" or "consisting essentially of." described embodiment. Thus, for example, alternative embodiments implying an apparatus comprising A+B+C include embodiments in which the apparatus consists of A+B+C and embodiments in which the apparatus consists essentially of A+B+C. As used herein, the terms "comprising" and "including" and variations thereof should be construed as synonymous and open ended, unless otherwise indicated.

以上實施例及彼等實施例之特徵係例示性的,且在不脫離本揭露內容之範疇之情況下,以上實施例及彼等實施例之特徵可單獨地或與本文中提供的其他實施例之任何一或多個特徵以任何組合來提供。The above embodiments and features of their embodiments are exemplary and may be used alone or in combination with other embodiments provided herein without departing from the scope of this disclosure. Any one or more of the features are provided in any combination.

熟習此項技術者將顯而易見,在不脫離本揭示內容之精神及範疇之情況下,可對本揭示內容進行各種修改及變化。因此,意欲本揭露內容涵蓋本文中之實施例之該等修改及變化,限制條件為,其在所附申請專利範圍及其等效內容之範疇內。It will be apparent to those skilled in the art that various modifications and variations can be made in the present disclosure without departing from the spirit and scope of the disclosure. Accordingly, it is intended that this disclosure covers such modifications and variations of the embodiments herein, subject to the proviso that they are within the scope of the appended claims and their equivalents.

101,301,401,501,601,701,801,1201:可折疊設備 102:折疊軸線 103:寬度 104:寬度之方向 105:長度 106:長度之方向 107:中心軸 109:折疊平面 111:平行板距離 203,403,803,4003:第一主表面 204a,404a,804a:第一平面 204b,404b,804b:第二平面 204c,404c,804c:第三平面 204d,404d:第四平面 205,405,805,4005:第二主表面 206,407,707,807,2505,4007:可折疊基板 207:核心層 208:第三內表面 209,409,709,809,3609,4009:第一中心表面區 210:第一最小距離 211,411,811:基板厚度 213:第一外層 213a:第一外層之第一部分 213b:第一外層之第二部分 214:第一內表面 214a:第一內表面區 214b:第二內表面區 215:第二外層 215a:第二外層之第一部分 215b:第二外層之第二部分 216:第二內表面 216a:第三內表面區 216b:第四內表面區 217:第一外厚度 218:第四內表面 219,419,719,819,4509:第二中心表面區 220:第二最小距離 221,421,821:第一部分 223:第一主表面之第一表面區 225:第二主表面之第二表面區 227,427,827:中心厚度 231,431,831:第二部分 233:第一主表面之第三表面區 234,434,834,3534:第一凹座 235:第二主表面之第四表面區 237:第二外厚度 241:基於聚合物之部分 244,444:第二凹座 245:第三接觸表面 247:第四接觸表面 251:塗層 253:第三主表面 255:第四主表面 257:塗層厚度 261:黏著層 263:第一接觸表面 265:第二接觸表面 267:黏著劑厚度 271:離型襯裡 273:離型襯裡之第一主表面 275:離型襯裡之第二主表面 281,481,781,881,4081:中心部分 303:顯示裝置之第一主表面 305:顯示裝置之第二主表面 307:顯示裝置 417,817:第一距離 423,823:第一表面區 425,825:第二表面區 433,833:第三表面區 435,835:第四表面區 437:第二距離 727:過渡深度 753,853,3553:第一過渡部分 755,855,3555:第二過渡部分 1001,1101:平行板設備 1003,1005,1103,1105:平行剛性不銹鋼板 1007,1111:平行板距離 1009:距離 1011:衝擊位置 1102:測試可折疊設備 1107:薄片 1109:測試黏著層 1300:消費型電子裝置 1302:外殼 1304:前表面 1306:後表面 1308:側表面 1310:顯示器 1312:蓋基板 1501,1503,1505,1507,1509,1511,1513,1515,1517,1519,1601,1603,1605,1607,1609,1611,1613,1615,1617,1619,1701,1703,1705,1707,1709,1711,1713,1715,1717,1719,1721,1801,1803,1805,1807,1809,1811,1813,1815,1817,1819,1821,1823,1825:步驟 1502,1506,1508,1510,1512,1514,1516,1518,1602,1604,1608,1610,1612,1614,1618,1702,1704,1706,1708,1710,1714,1716,1718,1720,1722,1802,1804,1808,1812,1814:箭頭 1901:層壓熔融拉製設備 1902:上部形成裝置 1904:下部形成裝置 1906:第一熔融材料 1908:第二熔融材料 1910:第一槽 1912:第二槽 1916,1918:外形成表面 1920:根部 1922,1924:外表面 1932:核心熔融層 1934:第一熔融外層 1936:第二熔融外層 2001:金剛石尖探針 2003:電腦數值控制(CNC)機器 2101,3201,4701,4801:容器 2103,3603,4011,4303:第一液體沉積物 2105,3605,4305:第二液體沉積物 2107:第一液體 2201,4401:蝕刻劑浴 2203:蝕刻劑 2205,3705,4103,4407:第一遮罩 2207,3707,4405:第二遮罩 2209,3709,4411:第三遮罩 2211,3711,4409:第四遮罩 2301,3401,3403,3801,4101,4501:研磨工具 2302,3402,3404,3802,4102,4502:方向 2401,4201,4601:鹽浴 2403,4203,4603:鹽溶液 3101:來源 3103,3105:第一鹽膏狀物 3203:第二鹽膏狀物 3205,3207,3209,3211:第一鹽沉積物 3301:爐 3303,3305:第二鹽沉積物 3704a:第一中心平面 4104,4406:平面 4403:蝕刻溶液 4703:第二液體 4803:第三液體 5301:厚度 5303:最大主應力 5305,5404,5405,5505,5507,5605,5607,5705,5707:曲線 5401,5501,5601,5701:水平軸 5403,5503,5603,5703:垂直軸 5407:圓圈 5409:菱形 5411:正方形 5413:三角形 5805,5807,5809,5811,5813,5815,5817,5819,5821,5823,5905,5907,5909,5911,5913,5915,5917:區域101, 301, 401, 501, 601, 701, 801, 1201: foldable devices 102: Folding axis 103: width 104: Direction of width 105: length 106: The direction of the length 107: Center shaft 109: Folding Plane 111: Parallel plate distance 203, 403, 803, 4003: First major surface 204a, 404a, 804a: first plane 204b, 404b, 804b: Second plane 204c, 404c, 804c: Third Plane 204d, 404d: Fourth plane 205, 405, 805, 4005: Second major surface 206, 407, 707, 807, 2505, 4007: Foldable substrates 207: Core Layer 208: Third inner surface 209,409,709,809,3609,4009: First central surface area 210: First Minimum Distance 211,411,811: Substrate thickness 213: First outer layer 213a: The first part of the first outer layer 213b: Second part of the first outer layer 214: First inner surface 214a: first inner surface area 214b: second inner surface area 215: Second outer layer 215a: The first part of the second outer layer 215b: The second part of the second outer layer 216: Second inner surface 216a: third inner surface area 216b: Fourth inner surface area 217: First outer thickness 218: Fourth inner surface 219,419,719,819,4509: Second Central Surface Area 220: Second minimum distance 221,421,821: Part 1 223: the first surface area of the first main surface 225: the second surface area of the second main surface 227,427,827: Center Thickness 231,431,831: Part II 233: the third surface area of the first main surface 234,434,834,3534: First Recess 235: the fourth surface area of the second main surface 237: Second outer thickness 241: Polymer-Based Parts 244,444: Second Recess 245: Third contact surface 247: Fourth Contact Surface 251: Coating 253: Third main surface 255: Fourth main surface 257: Coating Thickness 261: Adhesive layer 263: First Contact Surface 265: Second Contact Surface 267: Adhesive Thickness 271: Release liner 273: The first major surface of the release liner 275: Second main surface of release liner 281, 481, 781, 881, 4081: Center Section 303: the first main surface of the display device 305: the second main surface of the display device 307: Display device 417,817: First distance 423,823: First surface area 425,825: Second surface area 433,833: Third surface area 435,835: Fourth surface area 437: Second Distance 727: Transition Depth 753,853,3553: First Transition Section 755, 855, 3555: Second Transition Section 1001, 1101: Parallel Plate Equipment 1003, 1005, 1103, 1105: Parallel Rigid Stainless Steel Plates 1007, 1111: Parallel Plate Distance 1009: Distance 1011: Impact position 1102: Testing foldable devices 1107: Flakes 1109: Test Adhesion 1300: Consumer Electronics Devices 1302: Shell 1304: Front Surface 1306: Back Surface 1308: Side Surface 1310: Display 1312: Cover substrate 1501, 1503, 1505, 1507, 1509, 1511, 1513, 1515, 1517, 1519, 1601, 1603, 1605, 1607, 1609, 1611, 1613, 1615, 1617, 1619, 1701, 1703, 1705, 1707, 1709 1711,1713,1715,1717,1719,1721,1801,1803,1805,1807,1809,1811,1813,1815,1817,1819,1821,1823,1825: Steps 1502,1506,1508,1510,1512,1514,1516,1518,1602,1604,1608,1610,1612,1614,1618,1702,1704,1706,1708,1710,1714,1716,1718,1720,1722, 1802, 1804, 1808, 1812, 1814: Arrow 1901: Laminate melt drawing equipment 1902: Upper forming device 1904: Lower forming device 1906: First molten material 1908: Second molten material 1910: The first slot 1912: Second slot 1916, 1918: Externally formed surfaces 1920: Roots 1922, 1924: External Surfaces 1932: Core Fusion Layer 1934: First molten outer layer 1936: Second Molten Outer Layer 2001: Diamond Tip Probe 2003: Computer Numerical Control (CNC) Machines 2101, 3201, 4701, 4801: Containers 2103, 3603, 4011, 4303: First liquid deposits 2105, 3605, 4305: Second liquid deposits 2107: First Liquid 2201, 4401: Etchant baths 2203: Etchant 2205, 3705, 4103, 4407: first mask 2207, 3707, 4405: Second mask 2209, 3709, 4411: Third mask 2211, 3711, 4409: Fourth mask 2301, 3401, 3403, 3801, 4101, 4501: Grinding tools 2302, 3402, 3404, 3802, 4102, 4502: Directions 2401, 4201, 4601: Salt baths 2403, 4203, 4603: Salt solutions 3101: Source 3103, 3105: First salt paste 3203: Second Salt Paste 3205, 3207, 3209, 3211: First salt deposits 3301: Furnace 3303, 3305: Second Salt Deposit 3704a: First center plane 4104, 4406: Plane 4403: Etching Solution 4703: Second Liquid 4803: Third Liquid 5301: Thickness 5303: Maximum principal stress 5305, 5404, 5405, 5505, 5507, 5605, 5607, 5705, 5707: Curve 5401, 5501, 5601, 5701: Horizontal axis 5403, 5503, 5603, 5703: Vertical axis 5407: Circle 5409: Rhombus 5411: Square 5413: Triangle 5805, 5807, 5809, 5811, 5813, 5815, 5817, 5819, 5821, 5823, 5905, 5907, 5909, 5911, 5913, 5915, 5917: Area

當參看隨附圖式閱讀以下詳細描述時,更好地理解本揭露內容之實施例之以上及其他特徵及優勢,其中:The above and other features and advantages of embodiments of the present disclosure are better understood when reading the following detailed description with reference to the accompanying drawings, wherein:

第1圖為根據一些實施例的在一平配置中之一實例可折疊設備之示意圖,其中該經折疊配置之示意圖可顯得如在第9圖中般展示;FIG. 1 is a schematic diagram of an example foldable device in a flat configuration, wherein the schematic diagram of the folded configuration may appear as shown in FIG. 9, according to some embodiments;

第2圖至第8圖為根據一些實施例的沿著第1圖之線2-2之可折疊設備之橫截面圖;Figures 2-8 are cross-sectional views of the foldable device along line 2-2 of Figure 1, according to some embodiments;

第9圖為在一經折疊配置中的本揭露內容之實施例之實例可折疊設備之示意圖,其中該平配置之示意圖可顯得如在第1圖中般展示;9 is a schematic diagram of an example foldable device of an embodiment of the present disclosure in a folded configuration, wherein the schematic diagram of the flat configuration may appear as shown in FIG. 1;

第10圖至第11圖為判定一實例修改之可折疊設備之有效最小彎曲半徑的測試設備之橫截面圖;Figures 10 to 11 are cross-sectional views of a test device for determining the effective minimum bending radius of an example modified foldable device;

第12圖為在一經折疊配置中的本揭露內容之實施例之實例可折疊設備之示意圖;12 is a schematic diagram of an example foldable device of an embodiment of the present disclosure in a folded configuration;

第13圖為根據一些實施例的一實例消費型電子裝置之示意性平面圖;13 is a schematic plan view of an example consumer electronic device in accordance with some embodiments;

第14圖為第13圖之實例消費型電子裝置之示意性透視圖;FIG. 14 is a schematic perspective view of the example consumer electronic device of FIG. 13;

第15圖至第18圖為圖示根據本揭露內容之實施例的製作可折疊設備之實例方法之流程圖;FIGS. 15-18 are flowcharts illustrating an example method of making a foldable device according to embodiments of the present disclosure;

第19圖至第52圖示意性圖示在製作可折疊基板及/或可折疊設備之方法中之步驟;Figures 19 to 52 schematically illustrate steps in a method of making a foldable substrate and/or a foldable device;

第53圖展示基於玻璃之基板之筆掉落試驗的實驗結果,其展示作為基於玻璃之基板之厚度之函數的在基於玻璃之基板之主表面上的最大主應力;Figure 53 shows the experimental results of a pen drop test of a glass-based substrate showing the maximum principal stress on a major surface of a glass-based substrate as a function of thickness of the glass-based substrate;

第54圖展示作為基板厚度及中心厚度之函數的針對可折疊設備觀測之機械不穩定性之類型;Figure 54 shows the type of mechanical instability observed for foldable devices as a function of substrate thickness and center thickness;

第55圖至第57圖為圖示針對本揭露內容之一些實施例的結果之曲線;及FIGS. 55-57 are graphs illustrating results for some embodiments of the present disclosure; and

第58圖至第59圖示意性展示針對本揭露內容之實施例之一可折疊基板的光學阻滯量測。Figures 58-59 schematically show optical retardation measurements for a foldable substrate of an embodiment of the present disclosure.

貫穿本揭露內容,使用該等圖式來強調某些態樣。因而,不應設想在該等圖式中展示的不同區域、部分及基板之相對大小與其實際相對大小成比例,除非另有明確指示。Throughout this disclosure, these figures are used to emphasize certain aspects. Thus, the relative sizes of the various regions, portions and substrates shown in the figures should not be assumed to be proportional to their actual relative sizes unless expressly indicated otherwise.

國內寄存資訊(請依寄存機構、日期、號碼順序註記) 無 國外寄存資訊(請依寄存國家、機構、日期、號碼順序註記) 無Domestic storage information (please note in the order of storage institution, date and number) without Foreign deposit information (please note in the order of deposit country, institution, date and number) without

101:可折疊設備 101: Foldable Devices

107:中心軸 107: Center shaft

109:折疊平面 109: Folding Plane

203:第一主表面 203: First main surface

204a:第一平面 204a: First plane

204b:第二平面 204b: Second plane

204c:第三平面 204c: Third Plane

204d:第四平面 204d: Fourth plane

205:第二主表面 205: Second main surface

206:可折疊基板 206: Foldable Substrate

207:核心層 207: Core Layer

208:第三內表面 208: Third inner surface

209:第一中心表面區 209: First central surface area

210:第一最小距離 210: First Minimum Distance

211:基板厚度 211: Substrate thickness

213:第一外層 213: First outer layer

213a:第一外層之第一部分 213a: The first part of the first outer layer

213b:第一外層之第二部分 213b: Second part of the first outer layer

214:第一內表面 214: First inner surface

214a:第一內表面區 214a: first inner surface area

214b:第二內表面區 214b: second inner surface area

215:第二外層 215: Second outer layer

215b:第二外層之第二部分 215b: The second part of the second outer layer

216:第二內表面 216: Second inner surface

216a:第三內表面區 216a: third inner surface area

216b:第四內表面區 216b: Fourth inner surface area

217:第一外厚度 217: First outer thickness

218:第四內表面 218: Fourth inner surface

219:第二中心表面區 219: Second central surface area

220:第二最小距離 220: Second minimum distance

221:第一部分 221: Part One

223:第一主表面之第一表面區 223: the first surface area of the first main surface

225:第二主表面之第二表面區 225: the second surface area of the second main surface

227:中心厚度 227: Center Thickness

231:第二部分 231: Part II

233:第一主表面之第三表面區 233: the third surface area of the first main surface

234:第一凹座 234: First Recess

235:第二主表面之第四表面區 235: the fourth surface area of the second main surface

237:第二外厚度 237: Second outer thickness

241:基於聚合物之部分 241: Polymer-Based Parts

244:第二凹座 244: Second recess

245:第三接觸表面 245: Third contact surface

247:第四接觸表面 247: Fourth Contact Surface

251:塗層 251: Coating

253:第三主表面 253: Third main surface

255:第四主表面 255: Fourth main surface

257:塗層厚度 257: Coating Thickness

261:黏著層 261: Adhesive layer

263:第一接觸表面 263: First Contact Surface

265:第二接觸表面 265: Second Contact Surface

267:黏著劑厚度 267: Adhesive Thickness

271:離型襯裡 271: Release liner

273:離型襯裡之第一主表面 273: The first major surface of the release liner

275:離型襯裡之第二主表面 275: Second main surface of release liner

281:中心部分 281: Center Section

Claims (20)

一種可折疊基板,其包含: 一基板厚度,其界定於一第一主表面與與該第一主表面相對之一第二主表面之間,該基板厚度在自約100微米至約2毫米之一範圍中; 一第一外層,其包含該第一主表面及與該第一主表面相對之一第一內表面,一第一外厚度界定於該第一主表面與該第一內表面之間,該第一外層包含由一第一最小距離分開之一第一部分及一第二部分,該第一部分包含該第一主表面及該第一內表面,且該第二部分包含該第一主表面及該第一內表面; 一第二外層,其包含該第二主表面及與該第二主表面相對之一第二內表面,該第二外層包含界定於該第二主表面與該第二內表面之間的一第二外厚度,且該第二外層包含由一第二最小距離分開之一第三部分及一第四部分,該第三部分包含該第二主表面及該第二內表面,且該第四部分包含該第二主表面及該第二內表面;及 一核心層,其包含一第三內表面及與該第三內表面相對之一第四內表面,一中心厚度界定於該第三內表面與該第四內表面之間,該中心厚度在自約25微米至約80微米之一範圍中,該核心層定位於該第一外層與該第二外層之間,該第三內表面接觸該第一部分之該第一內表面及該第二部分之該第一內表面,一第一中心表面區在該第一外層之該第一部分與該第一外層之該第二部分之間,該第四內表面接觸該第三部分之該第二內表面及該第四部分之該第二內表面,一第二中心表面區在該第二外層之該第三部分與該第二外層之該第四部分之間,該第一中心表面區自該第一主表面凹進去一第一距離,且該第二中心表面區自該第二主表面凹進去一第二距離。A foldable substrate comprising: a substrate thickness defined between a first major surface and a second major surface opposite the first major surface, the substrate thickness in a range from about 100 microns to about 2 millimeters; a first outer layer comprising the first main surface and a first inner surface opposite the first main surface, a first outer thickness defined between the first main surface and the first inner surface, the first outer layer An outer layer includes a first portion and a second portion separated by a first minimum distance, the first portion including the first major surface and the first inner surface, and the second portion including the first major surface and the first major surface an inner surface; a second outer layer including the second major surface and a second inner surface opposite the second major surface, the second outer layer including a first defined between the second major surface and the second inner surface two outer thicknesses, and the second outer layer includes a third portion and a fourth portion separated by a second minimum distance, the third portion includes the second major surface and the second inner surface, and the fourth portion includes the second major surface and the second inner surface; and a core layer comprising a third inner surface and a fourth inner surface opposite to the third inner surface, a central thickness defined between the third inner surface and the fourth inner surface, the central thickness from In a range of about 25 microns to about 80 microns, the core layer is positioned between the first outer layer and the second outer layer, and the third inner surface contacts the first inner surface of the first portion and the second portion. The first inner surface, a first central surface area is between the first portion of the first outer layer and the second portion of the first outer layer, the fourth inner surface contacts the second inner surface of the third portion and the second inner surface of the fourth portion, a second central surface area between the third portion of the second outer layer and the fourth portion of the second outer layer, the first central surface area from the first A major surface is recessed a first distance, and the second central surface region is recessed a second distance from the second major surface. 如請求項1所述之可折疊基板,其中該核心層包含大於該第一外層之一第一熱膨脹係數的一核心熱膨脹係數,且該核心熱膨脹係數大於該第二外層之一第二熱膨脹係數。The foldable substrate of claim 1, wherein the core layer includes a core thermal expansion coefficient greater than a first thermal expansion coefficient of the first outer layer, and the core thermal expansion coefficient is greater than a second thermal expansion coefficient of the second outer layer. 如請求項1所述之可折疊基板,其中該核心層之一核心密度大於該第一外層之一第一密度,且該核心密度大於該第二外層之一第二密度。The foldable substrate of claim 1, wherein a core density of the core layer is greater than a first density of the first outer layer, and the core density is greater than a second density of the second outer layer. 如請求項1所述之可折疊基板,其中該核心層之一核心網路擴張係數小於該第一外層之一第一網路擴張係數,且該核心網路擴張係數小於該第二外層之一第二網路擴張係數。The foldable substrate of claim 1, wherein a core network expansion coefficient of the core layer is smaller than a first network expansion coefficient of the first outer layer, and the core network expansion coefficient is smaller than one of the second outer layers The second network expansion factor. 如請求項1所述之可折疊基板,其中該第一外厚度實質上等於該第二外厚度。The foldable substrate of claim 1, wherein the first outer thickness is substantially equal to the second outer thickness. 如請求項1所述之可折疊基板,其中該基板厚度在自約125微米至約200微米之一範圍中。The foldable substrate of claim 1, wherein the substrate thickness is in a range from about 125 microns to about 200 microns. 如請求項1所述之可折疊基板,其中該中心厚度在自約25微米至約60微米之一範圍中。The foldable substrate of claim 1, wherein the central thickness is in a range from about 25 microns to about 60 microns. 如請求項1至7中任一項所述之可折疊基板,進一步包含一塗層,該塗層安置於該第一主表面上且填充界定於該第一中心表面區與由該第一主表面界定之一第一平面之間的一凹座。The foldable substrate of any one of claims 1 to 7, further comprising a coating disposed on the first major surface and filling the region defined by the first central surface and defined by the first major surface The surfaces define a recess between a first plane. 如請求項1至7中任一項所述之可折疊基板,其中該第一外層包含以氧化物為基礎的一第一平均鉀濃度,該第二外層包含以氧化物為基礎的一第二平均鉀濃度,定位於該第一中心表面區與該第二中心表面區之間的該核心層之一中心部分包含以氧化物為基礎的一中心平均鉀濃度,且該第一平均鉀濃度與該中心平均鉀濃度之間的一絕對差為約百萬分之100或更小。The foldable substrate of any one of claims 1 to 7, wherein the first outer layer comprises a first oxide-based average potassium concentration and the second outer layer comprises a second oxide-based Average potassium concentration, a central portion of the core layer positioned between the first central surface region and the second central surface region comprises a central average potassium concentration based on oxide, and the first average potassium concentration is the same as An absolute difference between the mean potassium concentrations at the centers is about 100 parts per million or less. 如請求項1至7中任一項所述之可折疊基板,進一步包含: 一第一壓縮應力區域,其自在該第一主表面處的該第一外層之該第一部分延伸至一第一壓縮深度; 一第二壓縮應力區域,其自在該第二主表面處的該第二外層之該第三部分延伸至一第二壓縮深度; 一第三壓縮應力區域,其自在該第一主表面處的該第一外層之該第二部分延伸至一第三壓縮深度; 一第四壓縮應力區域,其自在該第二主表面處的該第二外層之該第四部分延伸至一第四壓縮深度; 一第一中心壓縮應力區域,其自該第一中心表面區延伸至一第一中心壓縮深度;及 一第二中心壓縮應力區域,其延伸至自該第二中心表面區延伸之一第二中心壓縮深度。The foldable substrate of any one of claims 1 to 7, further comprising: a first region of compressive stress extending from the first portion of the first outer layer at the first major surface to a first compression depth; a second region of compressive stress extending from the third portion of the second outer layer at the second major surface to a second depth of compression; a third region of compressive stress extending from the second portion of the first outer layer at the first major surface to a third depth of compression; a fourth region of compressive stress extending from the fourth portion of the second outer layer at the second major surface to a fourth depth of compression; a first central compressive stress region extending from the first central surface region to a first central compressive depth; and A second central compressive stress region extending to a second central compressive depth extending from the second central surface region. 如請求項10所述之可折疊基板,其中作為該基板厚度之一百分比的該第一壓縮深度與作為該中心厚度之一百分比的該第一中心壓縮深度之間的一絕對差為約1%或更小。The foldable substrate of claim 10, wherein an absolute difference between the first compression depth as a percentage of the substrate thickness and the first central compression depth as a percentage of the center thickness is about 1% or smaller. 如請求項10所述之可折疊基板,其中該第一部分包含與該第一壓縮深度相關聯的一或多個鹼金屬離子之一第一層深度,該第三部分包含與該第二壓縮深度相關聯的一或多個鹼金屬離子之一第二層深度,該第二部分包含與該第三壓縮深度相關聯的一或多個鹼金屬離子之一第三層深度,該第四部分包含與該第四壓縮深度相關聯的一或多個鹼金屬離子之一第四層深度,該中心部分包含與該第一中心壓縮深度相關聯的一或多個鹼金屬離子之一第一中心層深度,該中心部分包含與該第二中心壓縮深度相關聯的一或多個鹼金屬離子之一第二中心層深度,作為該基板厚度之一百分比的該第一層深度與作為該中心厚度之一百分比的一第一中心層深度之間的一絕對差為約0.5%或更小。The foldable substrate of claim 10, wherein the first portion includes a first layer depth of one or more alkali metal ions associated with the first compression depth, and the third portion includes a first layer depth associated with the second compression depth a second depth of layers associated with one or more alkali metal ions, the second portion comprising a third depth of layers of one or more alkali metal ions associated with the third compression depth, the fourth portion comprising a fourth depth of layers of one or more alkali metal ions associated with the fourth depth of compression, the central portion comprising a first central layer of one or more alkali metal ions associated with the first depth of compression Depth, the central portion contains a second central layer depth of one or more alkali metal ions associated with the second central compression depth, the first layer depth as a percentage of the substrate thickness and as the central thickness An absolute difference between a percentage of a first center layer depth is about 0.5% or less. 如請求項1至7中任一項所述之可折疊基板,其中該第二距離為自該基板厚度之約5%至約20%。The foldable substrate of any one of claims 1-7, wherein the second distance is from about 5% to about 20% of the thickness of the substrate. 如請求項1至7中任一項所述之可折疊基板,其中該第一距離實質上等於該第二距離。The foldable substrate of any one of claims 1 to 7, wherein the first distance is substantially equal to the second distance. 一種製作一可折疊基板之方法,該可折疊基板包含定位於一第一外層與一第二外層之間且接觸該第一外層及該第二外層之一核心層、界定於一第一主表面與一第二主表面之間的一基板厚度,該第一外層界定該第一主表面且該第二外層界定與該第一主表面相對之該第二主表面,該方法包含以下步驟: 蝕刻該第一主表面之一部分以形成該核心層之一第一中心表面區;及 蝕刻該第二主表面之一部分以形成該核心層之一第二中心表面區, 其中一中心部分包含界定於該第一中心表面區與該第二中心表面區之間的一中心厚度,該中心部分中的該核心層之該第一中心表面區定位於該第一外層之一第一部分與該第一外層之一第二部分之間,該中心部分中的該核心層之該第二中心表面區定位於該第二外層之一第三部分與該第二外層之一第四部分之間。A method of making a foldable substrate comprising a core layer positioned between a first outer layer and a second outer layer and in contact with the first outer layer and the second outer layer, defined on a first major surface A substrate thickness between a second major surface, the first outer layer defining the first major surface and the second outer layer defining the second major surface opposite the first major surface, the method comprising the steps of: etching a portion of the first major surface to form a first central surface region of the core layer; and etching a portion of the second major surface to form a second central surface region of the core layer, wherein a central portion includes a central thickness defined between the first central surface region and the second central surface region, the first central surface region of the core layer in the central portion is positioned on one of the first outer layers Between the first portion and a second portion of a first outer layer, the second central surface area of the core layer in the central portion is positioned between a third portion of the second outer layer and a fourth portion of the second outer layer between parts. 如請求項15所述之方法,其中該第一外層包含以氧化物為基礎的一第一現有平均鉀濃度,該核心層包含以氧化物為基礎的一核心現有平均鉀濃度,且該核心現有平均鉀濃度為約百萬分之10,或大於該第一現有平均鉀濃度。The method of claim 15, wherein the first outer layer comprises a first oxide-based average potassium concentration, the core layer comprises a core oxide-based average potassium concentration, and the core has The average potassium concentration is about 10 parts per million, or greater than the first existing average potassium concentration. 如請求項15所述之方法,進一步包含以下步驟:在該蝕刻該第一主表面之該部分之步驟及該蝕刻該第二主表面之該部分之步驟後化學強化該可折疊基板之步驟。The method of claim 15, further comprising the step of chemically strengthening the foldable substrate after the step of etching the portion of the first major surface and the step of etching the portion of the second major surface. 如請求項17所述之方法,其中,在該化學強化之步驟前,該第一外層包含一或多種鹼金屬離子之一第一擴散率,該核心層包含一或多種鹼金屬離子之一核心擴散率,且該第一擴散率大於該核心擴散率。The method of claim 17, wherein, prior to the step of chemical strengthening, the first outer layer comprises a first diffusivity of one or more alkali metal ions and the core layer comprises a core of one or more alkali metal ions diffusivity, and the first diffusivity is greater than the core diffusivity. 如請求項17至18中任一項所述之方法,其中,在該化學強化之步驟後,該第一外層包含以氧化物為基礎的一第一平均鉀濃度,該第二外層包含以氧化物為基礎的一第二平均鉀濃度,該中心部分定位於該第一中心表面區與該第二中心表面區之間,包含以氧化物為基礎的一中心平均鉀濃度,且該第一平均鉀濃度與該中心平均鉀濃度之間的一絕對差為約百萬分之100或更小。18. The method of any one of claims 17 to 18, wherein, after the step of chemical strengthening, the first outer layer comprises a first average potassium concentration based on an oxide, and the second outer layer comprises an oxide based a second average potassium concentration based on an oxide, the central portion is positioned between the first central surface region and the second central surface region, comprising a central average potassium concentration based on an oxide, and the first average An absolute difference between the potassium concentration and the average potassium concentration at the center is about 100 parts per million or less. 如請求項17至18中任一項所述之方法,該方法進一步包含以下步驟: 形成自在該第一主表面處的該第一外層之該第一部分延伸至一第一壓縮深度的一第一壓縮應力區域; 形成自在該第二主表面處的該第二外層之該第三部分延伸至一第二壓縮深度的一第二壓縮應力區域; 形成自在該第一主表面處的該第一外層之該第二部分延伸至一第三壓縮深度的一第三壓縮應力區域; 形成自在該第二主表面處的該第二外層之該第四部分延伸至一第四壓縮深度的一第四壓縮應力區域; 形成自該第一中心表面區延伸至一第一中心壓縮深度之一第一中心壓縮應力區域;及 形成延伸至自該第二中心表面區延伸之一第二中心壓縮深度之一第二中心壓縮應力區域, 其中作為該基板厚度之一百分比的該第一壓縮深度與作為該中心厚度之一百分比的該第一中心壓縮深度之間的一絕對差為約1%或更小。The method of any one of claims 17 to 18, further comprising the steps of: forming a first region of compressive stress extending from the first portion of the first outer layer at the first major surface to a first compression depth; forming a second region of compressive stress extending from the third portion of the second outer layer at the second major surface to a second depth of compression; forming a third region of compressive stress extending from the second portion of the first outer layer at the first major surface to a third depth of compression; forming a fourth region of compressive stress extending from the fourth portion of the second outer layer at the second major surface to a fourth depth of compression; forming a first central compressive stress region extending from the first central surface region to a first central compressive depth; and forming a second central compressive stress region extending to a second central compressive depth extending from the second central surface region, wherein an absolute difference between the first compression depth as a percentage of the substrate thickness and the first central compression depth as a percentage of the center thickness is about 1% or less.
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